A graphene composite photon diode light source

Through the combination of graphene film and multi-band light-emitting diode chips, combined with silicone lens and variable resistance, the problem of spectrum limitation of light-emitting diodes is solved, and the mixing and regulation of multi-band photon energy is realized, which is suitable for light source applications in multiple fields.

CN111769106BActive Publication Date: 2025-01-14SUZHOU YICIYUAN TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202010764432.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-08-03
Publication Date
2025-01-14
Estimated Expiration
2040-08-03

AI Technical Summary

Technical Problem

Existing light-emitting diodes can only emit photons in a single band, and their spectrum is limited to visible light and near-infrared ranges, which cannot meet the needs of multi-band photon energy in new bioenergy, indoor planting, medical beauty and skin care, and medical physiotherapy, and cannot adjust independently. The proportion of photon energy and control the amount of heat radiation.

Method used

A graphene composite photon diode light source was designed. By laying graphene film and light-emitting diode chips of different bands on the insulating base, combining silicone lenses and variable resistances, the photon energy can be mixed and regulated, and photon energy can be independently controlled. and the amount of heat radiation.

Benefits of technology

It realizes composite photon emission from visible light to infrared band, can adjust the ratio of photon energy according to needs, and is suitable for new bioenergy, indoor planting, medical beauty and skin care, and medical physiotherapy, improving the widespread application and effect of light sources.

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Abstract

The present invention discloses a graphene composite photon diode light source, comprising: an insulating base for integrated packaging, a light-emitting diode chip, a graphene film, and a silicone lens, wherein the inner wall of the insulating base is a concave three-dimensional structure, the light-emitting diode chip is mounted on a cylindrical negative electrode at the center of the inner wall, and comprises one or more diode wafers of different wavelengths, the graphene film is laid on the inner wall, and the thermal radiation and infrared photons emitted by the graphene film and the photons of different wavelengths emitted by the light-emitting diode chip converge in a set central area through the concave structure of the inner wall of the insulating base to form composite photons, and are diverged through the silicone lens. The present invention can realize the generation of composite photons of corresponding wavelengths suitable for the growth and metabolism of related organisms and human cell physiotherapy through a single device, and can be widely used in new bioenergy, indoor planting, medical beauty skin care and other fields.
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Description

Technical Field

[0001] The invention relates to the field of light-emitting diode lighting, and in particular to a graphene composite photon diode light source. Background Art

[0002] A light-emitting diode is a special diode that consists of a P-pole and N-pole junction structure formed by processes such as semiconductor material doping. When different electrode voltages are applied, current flows from the P-pole to the N-pole, and different carrier holes and electrons meet and recombine, causing the electrons to fall to a lower energy level and release energy in the form of photons. Light of different wavelengths corresponds to different photons and energies.

[0003] Currently, light-emitting diodes are widely used in many fields due to their small size, low power consumption, long life, and environmental protection. However, their light-emitting principle determines that a single light-emitting diode can only emit photons of a single band, and its spectrum is limited to the visible light and near-infrared range.

[0004] However, light sources used in new bioenergy, indoor planting, medical beauty skin care, medical physiotherapy and other fields often require the composite effect of photon energy in multiple different bands, and some applications require the use of photon energy in the far-infrared band, and require the ability to autonomously adjust the proportion of photon energy in different bands emitted, as well as control the amount of thermal radiation emitted by the light source. Currently, there is a lack of an effective composite photon luminescent light source for these applications.

[0005] In view of the above problems, the present invention aims to design a graphene composite photon light emitting diode light source by combining the physical and chemical properties of graphene, a new type of carbon material. Graphene is an emerging carbon material, which is composed of carbon atoms arranged in a hexagonal lattice to form a single-layer two-dimensional honeycomb-like plane structure. Electrons can move at high speed in the material, and it has excellent mechanical, thermal, optical and electrical properties. The Young's modulus can reach 11,000GPa, the fracture strength can reach 125GPa, the thermal conductivity can reach 5,000W / (m·K); the carrier mobility can reach 200,000cm 2 / V·s. Its two-dimensional planar lattice structure allows electrons to flow freely, achieving excellent electrical and thermal conductivity. When two levels of electricity are turned on, the electron temperature can be much higher than the acoustic vibration mode of the graphene lattice, and it can continuously maintain the excited state and efficiently release infrared photons in the 5 to 18 micron band. Summary of the invention

[0006] The present invention provides a graphene composite photon diode light source, which at least solves the problems of single photon energy band and limited luminous spectrum emitted by light-emitting diodes in the prior art, and can emit effectively mixed composite photon energy, and can autonomously adjust the proportion of photon energy in different bands, and release controllable thermal radiation energy. It can be widely used in new bioenergy, indoor planting, medical beauty and skin care, heating and lighting, medical physiotherapy and other fields.

[0007] The present invention is implemented through the following technical solutions, including: an insulating base for integrated packaging, the inner wall of the insulating base is a concave three-dimensional structure; a columnar negative electrode, the columnar negative electrode is located at the center of the inner wall of the insulating base, and the horizontal plane can be slightly depressed or raised to form a staggered layer; a light-emitting diode chip, the light-emitting diode chip is mounted on the columnar negative electrode, including one or more light-emitting diode wafers of different bands; a graphene film, the graphene film is laid on the inner wall of the insulating base; a silicone lens, the silicone lens is mounted on the upper end of the insulating base; silicone, the silicone is used to encapsulate the devices in the insulating base and is integrated with the silicone lens.

[0008] Furthermore, the inner wall of the insulating base described in the present invention is designed based on a concave three-dimensional structure, which can be a hemispherical concave surface, a concave concave surface, or a three-dimensional structure of a concave surface spliced ​​with multiple planes. The points on the concave surface, or the lines connecting the center points of the multiple planes and the set intersection area are respectively perpendicular to the tangent planes or planes of the corresponding concave points, so that the light and heat radiation emitted from the inner wall of the insulating base form a convergence effect in the set intersection area.

[0009] Furthermore, the bottom of the light emitting diode chip of the present invention is provided with a heat dissipation base plate, one end of which is connected to the columnar negative electrode, and the other end is connected to the resistor and the positive electrode.

[0010] Furthermore, the graphene film described in the present invention is laid on the inner wall of the insulating base, and its structure is a three-layer sandwich structure: an upper insulating protection layer, a middle graphene film layer, and a lower insulating protection layer.

[0011] Furthermore, the insulating protective layer of the present invention may be a resin pad, such as silicone resin, polyurethane resin, or silica gel, which plays the role of insulating, shaping, and protecting the graphene film layer.

[0012] Furthermore, the preparation methods of the graphene film layer described in the present invention are relatively diverse. The graphene film can be prepared by chemical vapor deposition, or by vacuum filtration, spin coating, or evaporation of a dispersion containing graphene powder to form a graphene film on a filter membrane or a carrier. A certain amount of infrared emitter can be added as needed.

[0013] Furthermore, the graphene film of the present invention excites electrons through an electric heating method to generate photons and thermal radiation in the infrared band of 5 to 18 microns, and can release thermal radiation uniformly in a planar manner.

[0014] Furthermore, a heat-insulating reflective layer is provided between the graphene film of the present invention and the inner wall of the insulating base to prevent the photons and heat radiation generated by the graphene film from being emitted to the outside.

[0015] Furthermore, the resistors described in the present invention are variable resistors of different types, and the current of the light-emitting diode chip and the graphene film is changed by controlling their resistance values, thereby changing the radiant flux of each band of light emitted by them, and controlling the proportion of photon energy of each band in the composite photon, thereby controlling the spectrum of the composite photon light source.

[0016] Furthermore, the photons and thermal radiation released by the graphene film of the present invention and the photons of different wavelengths released by the light-emitting diode chip can be converged at the set intersection area through the concave three-dimensional structure of the inner wall of the insulating base, and then dispersed through the silicone lens after mixing.

[0017] Furthermore, the silicone lens of the present invention can be molded into lenses of different shapes, including spherical, cylindrical, elliptical, gourd-shaped, etc., for focusing light or adjusting the emission angle of light.

[0018] The beneficial effect of the present invention is that it utilizes the characteristics of graphene film and the combination of light-emitting diode chips of different bands, so as to realize the emission of mixed composite photons from the visible light band to the infrared band and thermal radiation through a single component, and can autonomously adjust the proportion of photon energy in different bands according to needs, so that the light source can better act on plants, tissue cells, organisms, human body parts, etc., and can be widely used in new bioenergy, indoor planting, medical beauty skin care, heating lighting, medical physiotherapy and other fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0020] Figure 1 is a structural cross-sectional view of embodiment 1 of the present invention;

[0021] Figure 2 is a top view of the structure of Embodiment 1 of the present invention;

[0022] Figure 3 is a structural cross-sectional view of a graphene film according to Embodiment 1 of the present invention;

[0023] Figure 4 is a structural cross-sectional view of the second embodiment of the present invention;

[0024] Figure 5 is a top view of the structure of the second embodiment of the present invention;

[0025] Figure 6 This is a spectrum diagram in the visible light region of the second embodiment of the present invention.

[0026] Description of reference numerals:

[0027] 10. Insulating base; 11. Columnar negative electrode; 12. Light emitting diode chip; 13. Heat dissipation film; 14. Graphene film; 15. Silicone lens; 16. Silicone; 17. Setting the intersection area; 30. Lower insulating protective layer; 31. Upper insulating protective layer; 32. Middle graphene film layer; 40. Insulating base; 41. Columnar negative electrode; 42. Light emitting diode chip; 43. Heat dissipation film; 44. Graphene film; 45. Silicone lens; 46. Silicone; 47. Setting the intersection area. DETAILED DESCRIPTION

[0028] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0029] Embodiment 1:

[0030] like Figures 1 to 2 As shown, a graphene composite photon diode light source of the present invention, a structure diagram of an embodiment, comprising: an insulating base 10 for integrated packaging of the entire device, a cylindrical negative electrode 11, a light-emitting diode chip 12, a heat sink 13, a graphene film 14, a silicone lens 15, and a silicone 16 for packaging;

[0031] The inner wall of the insulating base 10 is a structure based on the design of a hemispherical concave surface, and the lines connecting the points on the concave surface and the set intersection area 17 are respectively perpendicular to the tangent planes of the corresponding concave points, so that the light and heat radiation emitted by the objects on the inner wall of the insulating base 10 form a convergence effect in the set intersection area 17;

[0032] The columnar negative electrode 11 is located at the center of the insulating base 10, and is slightly higher than the horizontal plane, forming a staggered structure;

[0033] The light emitting diode chip 12 includes one or more light emitting diode wafers of different wavelength bands, with the heat dissipation base plate 13 installed at the bottom, mounted on the negative electrode 11, with one end connected to the negative electrode 11, and the other end connected to the resistor and the positive electrode;

[0034] The graphene film 14 is laid on the inner wall of the insulating base 10, and a heat-insulating reflective layer is provided between the inner wall, one end of the graphene film 14 is connected to the negative electrode 11, and the other end is connected to the resistor and the positive electrode;

[0035] The resistors are variable resistors of different types, and the current of the light-emitting diode chip 12 and the graphene film 14 is changed by adjusting the resistance value thereof, thereby changing the radiant flux of each band of light emitted by them, and controlling the proportion of the photon energy of each band in the composite photon, thereby controlling the spectrum of the composite photon light source;

[0036] The silicone lens 15 is mounted on the upper end of the insulating base 10 and can be molded into lenses of different shapes, including: spherical, cylindrical, elliptical, gourd-shaped, etc., for focusing light or adjusting the emission angle of light;

[0037] The insulating base 10 is injection molded with the silicone rubber 16 to encapsulate and fix the light-emitting diode chip 12 and the graphene film 14 , and is integrated with the silicone rubber lens 15 .

[0038] like Figure 3 As shown, a cross-sectional view of the structure of a graphene film of a first embodiment of a graphene composite photon diode light source of the present invention comprises: a lower insulating protective layer 30, an upper insulating protective layer 31, and a middle graphene film layer 32;

[0039] The lower insulating protective layer 30 and the upper insulating protective layer 31 may be made of resin pads, such as silicone resin, polyurethane resin, or silica gel, which play the role of insulating, shaping, and protecting the graphene film layer;

[0040] The middle graphene film layer 32 can be prepared by chemical vapor deposition, or by vacuum filtration, spin coating, evaporation, etc. of a dispersion containing graphene powder to form a graphene film on a filter membrane or a carrier, and a certain amount of infrared emitter can be added as needed.

[0041] Embodiment 2:

[0042] like Figures 4 to 5 As shown, a structural diagram of a second embodiment of a graphene composite photon diode light source of the present invention includes: an insulating base 40 for integrating and packaging the entire light emitting diode device, a columnar negative electrode 41, a light emitting diode chip 42, a heat dissipation base 43, a graphene film 44, a silicone lens 45, and silicone 46 for packaging;

[0043] The inner wall of the insulating base 40 is a three-dimensional structure of a concave surface spliced ​​with multiple planes, and the lines connecting the center points of the multiple planes and the set intersection area 47 are respectively perpendicular to the corresponding planes, so that the light and heat radiation emitted from the objects on the inner wall of the insulating base 40 form a convergence effect in the set intersection area 47;

[0044] The columnar negative electrode 41 is located at the center of the insulating base 40, and is slightly higher than the horizontal plane, forming a staggered structure;

[0045] The light emitting diode chip 42 includes one or more light emitting diode wafers of different wavelength bands, and has the heat dissipation base plate 43 at the bottom, which is mounted on the negative electrode 41, with one end connected to the negative electrode 41 and the other end connected to the resistor and the positive electrode;

[0046] The graphene film 44 is laid on the inner wall of the insulating base 40 with a heat-insulating reflective layer provided therebetween, one end of which is connected to the negative electrode 41 and the other end of which is connected to the resistor and the positive electrode;

[0047] The silicone lens 45 is mounted on the upper end of the insulating base 40 and can be molded into lenses of different shapes, including: spherical, cylindrical, elliptical, gourd-shaped, etc., for focusing light or adjusting the emission angle of light;

[0048] The insulating base 40 is injection molded with the silicone rubber 46 to encapsulate and fix the light emitting diode chip 42 and the graphene film 44 , and is integrated with the silicone rubber lens 45 .

[0049] Preferably, the light-emitting diode chip 42 is 5 upright sliced ​​wafers, which can emit photons of different bands, including 420nm blue light, 660nm red light, 810nm infrared light, 1050nm near-infrared band, and 1550nm mid-infrared band.

[0050] Furthermore, after the circuit is connected and the power is turned on, the light-emitting diode chip 42 emits photons of five different bands, which converge with the infrared waveband photons and thermal radiation emitted by the graphene film 44 at the set intersection area 47, and after mixing, they are dispersed through the silicone lens 45.

[0051] Furthermore, the resistance values ​​of the resistors are adjusted respectively, thereby changing the current of the light-emitting diode chip 42 and the graphene film 44, thereby changing the proportion of each energy in the composite photon, and thus obtaining a light source that meets the needs.

[0052] like Figure 6As shown, a spectrum diagram of some bands of Example 2 of a graphene composite photon diode light source of the present invention is tested using an AQ6373 spectrum analyzer, the spectrum test range is 350nm to 1200nm, and the test main peak wavelength values ​​are: 430nm with a radioactive flux of 96%, 660nm with a radioactive flux of 100%, 815nm with a radioactive flux of 72%, and 1050nm with a radioactive flux of 72%.

[0053] This embodiment can well provide a photon skin rejuvenation light source in the field of medical beauty. The composite photons of blue light, red light, and infrared bands can penetrate skin cells to varying degrees, act on various skin tissue cells, reduce inflammation, accelerate repair, promote circulation metabolism, accelerate blood circulation, and achieve a healthy physiotherapy effect.

[0054] Finally, in the description of the present invention, it should be noted that the terms "center", "above", "below", "cylindrical", "hemispherical", "inside", "outside" and the like indicating directions or positional relationships are based on the directions and positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a characteristic shape, structure, and operation, and therefore cannot be understood as limiting the present invention. In addition, the term "plane" can be a square plane, a rectangular plane, or a plane of other shapes, depending on the shape of the selected chip. Unless otherwise clearly specified and explained, the terms "installation", "packaging", "connection", "laying", "processing", and "manufacturing" should be understood in a broad sense. For example, the connection can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be an internal connection between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances. In addition, in the description of the patent of the present invention, unless otherwise specified, "plurality" means two or more.

[0055] Note that the embodiments of the above inventions and the technical principles used, those skilled in the art will understand that the present invention is not limited to the specific embodiments described here, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention is described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A graphene composite photon diode light source, characterized in that: include: An insulating base for integrated packaging, wherein the inner wall of the insulating base is a concave three-dimensional structure; a cylindrical negative electrode, wherein the cylindrical negative electrode is installed in the concave structure of the insulating base; A light-emitting diode chip, the light-emitting diode chip is mounted on the columnar negative electrode, and includes one or more light-emitting diode wafers of different wavelength bands; a graphene film, the graphene film is laid on the inner wall of the insulating base; a silicone lens, the silicone lens is mounted on the upper end of the insulating base; silicone, the silicone is used to encapsulate the devices in the insulating base and is integrated with the silicone lens; wherein one end of the light-emitting diode chip is connected to the columnar negative electrode, and the other end is respectively connected to multiple resistors and a positive electrode; wherein one end of the graphene film is connected to the columnar negative electrode, and the other end is respectively connected to a resistor and a positive electrode; wherein the resistor is a variable resistor, and the current of the light-emitting diode chip and the graphene film is changed by controlling its resistance value, thereby changing the radiant flux of each wavelength band of light emitted by them, and controlling the proportion of the energy of photons of each wavelength band in the composite photons, thereby controlling the spectrum of the composite photon light source.

2. A graphene composite photon diode light source as claimed in claim 1, characterized in that: The inner wall of the insulating base is a hemispherical concave surface or a multi-plane spliced ​​concave surface designed based on a concave three-dimensional structure. The points on the hemispherical concave surface or the lines connecting the center points of the multi-planes and the set intersection area are respectively perpendicular to the tangent planes or planes of the corresponding concave points, so that the light and heat radiation emitted from the inner wall of the insulating base form a convergence effect in the set intersection area.

3. A graphene composite photon diode light source as claimed in claim 1, characterized in that: A heat dissipation base sheet is arranged at the bottom of the light emitting diode chip.

4. A graphene composite photon diode light source as claimed in claim 1, characterized in that: The graphene film is a three-layer sandwich structure: an upper insulating protective layer, a middle graphene film layer, and a lower insulating protective layer.

5. A graphene composite photon diode light source as claimed in claim 1, characterized in that: A heat-insulating reflective layer is provided between the graphene film and the inner wall of the insulating base to prevent the photons and heat radiation generated by the graphene film from being emitted to the outside.

6. A graphene composite photon diode light source as claimed in claim 1, characterized in that: The silicone lens is installed on the upper end of the insulating base. The shape of the lens is spherical, cylindrical, elliptical, or gourd-shaped, and is used for focusing light or adjusting the emission angle of light.

Citation Information

Patent Citations

  • Graphene composite photon diode light source

    CN212725299U