Substrate processing device, method for manufacturing semiconductor device, and recording medium

Abstract

The present invention provides a technology comprising: a processing chamber for processing a substrate, a first gas supply system having multiple gas tanks filled with and heating a first gas and supplying the first gas to the substrate in the processing chamber, and a control unit, which is configured to control the first gas supply system so that the first gas can be supplied to the substrate in the processing chamber while switching the multiple gas tanks.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a recording medium. Background Art

[0002] As one of the manufacturing processes of semiconductor devices, substrate processing is sometimes required, that is, the substrate is moved into a processing chamber of a substrate processing device, and plasma is used to activate the raw material gas, reaction gas, etc. supplied to the processing chamber to form various films such as insulating films, semiconductor films, and conductor films on the substrate, or to remove various films.

[0003] Existing technical literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-216906 Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, the saturated vapor pressure of the reactive gas as the raw material gas is low, and the supply pressure to the device is low. Therefore, it is impossible to increase the flow rate of the flow controller, and it is difficult to increase the film formation rate and improve the film quality.

[0008] An object of the present disclosure is to provide a technology capable of uniformly processing a substrate.

[0009] Solution to the problem

[0010] According to one scheme of the present disclosure, a technology is provided, comprising: a processing chamber for processing a substrate, a first gas supply system having a plurality of gas tanks filled with and heating a first gas and supplying the first gas to the substrate in the processing chamber, and a control unit, which is configured to control the first gas supply system so as to supply the first gas to the substrate in the processing chamber while switching the plurality of gas tanks.

[0011] Effects of the Invention

[0012] According to the present disclosure, it is possible to provide a technology capable of uniformly processing a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] [ Figure 1 ] is a schematic structural diagram of a vertical processing furnace of a substrate processing device that is suitable for use in an embodiment of the present disclosure, and is a diagram showing a processing furnace portion in a vertical cross-sectional view.

[0014] [ Figure 2 ] is a schematic diagram of a vertical processing furnace of a substrate processing device suitable for use in an embodiment of the present disclosure, Figure 1The AA line cross-sectional view shows a diagram of a processing furnace portion.

[0015] [ Figure 3 ](a) is an enlarged cross-sectional view for illustrating the buffer structure of a substrate processing device that is suitably used in an embodiment of the present disclosure, and (b) is a schematic diagram for illustrating the buffer structure of a substrate processing device that is suitably used in an embodiment of the present disclosure.

[0016] [ Figure 4 ] is a schematic configuration diagram of a controller of a substrate processing apparatus suitable for use in an embodiment of the present disclosure, and is a diagram showing a control system of the controller in the form of a block diagram.

[0017] [ Figure 5 ] is a flow chart of a substrate processing step involved in an embodiment of the present disclosure.

[0018] [ Figure 6 ] is a diagram showing the timing of gas supply in a substrate processing step according to an embodiment of the present disclosure.

[0019] [ Figure 7 ] is a schematic diagram of the raw gas supply pipeline of a substrate processing device that is suitable for use in an embodiment of the present disclosure.

[0020] [ Figure 8 ] is a schematic configuration diagram for illustrating a modified example 1 of a raw gas supply line of a substrate processing apparatus that is suitably used in an embodiment of the present disclosure.

[0021] [ Fig. 9 ] is a schematic configuration diagram for illustrating a second modification of a raw gas supply line of a substrate processing apparatus that is suitable for use in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0022] <Embodiments of the present disclosure>

[0023] Below, refer to Figures 1 to 7 One embodiment of the present disclosure will be described.

[0024] (1) Configuration of substrate processing apparatus (heating device)

[0025] like Figure 1 As shown in the figure, the processing furnace 202 is a so-called vertical furnace capable of accommodating substrates in multiple stages in the vertical direction, and has a heater 207 as a heating device (heating mechanism). The heater 207 is cylindrical and is supported by a heater base (not shown) as a holding plate and installed vertically. The heater 207 can also function as an activation mechanism (excitation unit) that activates (excites) gas with heat as described later.

[0026] (Processing Room)

[0027] A reaction tube 203 is provided inside the heater 207 concentrically with the heater 207. The reaction tube 203 is made of heat-resistant materials such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a header (inlet flange) 209 is provided concentrically with the reaction tube 203. The header 209 is made of metal such as stainless steel (SUS), and is formed into a cylindrical shape with an upper end and a lower end open. The upper end of the header 209 is configured to be connected to the lower end of the reaction tube 203 to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the header 209 and the reaction tube 203. The header 209 is supported by the heater base, so that the reaction tube 203 is installed vertically. The processing container (reaction container) is mainly composed of the reaction tube 203 and the header 209. A processing chamber 201 is formed in the hollow portion of the cylinder inside the processing container. The processing chamber 201 is configured to accommodate a plurality of wafers 200 as substrates. It should be noted that the processing container is not limited to the above configuration, and sometimes only the reaction tube 203 is referred to as the processing container.

[0028] Nozzles 249a and 249b are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209. The nozzles 249a and 249b are connected to the gas supply pipes 232a and 232b, respectively.

[0029] In the gas supply pipes 232a, 232b, mass flow controllers (MFC) 241a, 241b as flow controllers (flow regulators) and valves 243a, 243b as switch valves are respectively provided in order from the upstream side of the gas flow. The gas supply pipes 232c, 232d for supplying inert gas are respectively connected to the downstream side of the valves 243a, 243b of the gas supply pipes 232a, 232b. In the gas supply pipes 232c, 232d, MFCs 241c, 241d and valves 243c, 243d are respectively provided in order from the upstream side of the gas flow.

[0030] like Figure 7As shown, a first gas tank 331a, a second gas tank 331b, a first pressure gauge 332a for measuring the pressure of the first gas tank 331a, a second pressure gauge 332b for measuring the pressure of the second gas tank 331b, a first valve 333a for controlling the supply of gas from the first gas tank 331a to the MFC 241a via the gas supply pipe 232a, and a second valve 333b for controlling the supply of gas from the second gas tank 331b to the MFC 241a via the gas supply pipe 232a are provided on the upstream side of the gas supply pipe 232a. A first pneumatic valve 334a for controlling the supply of gas from the pressure regulating regulator 335 to the first gas tank 331a is provided on the upstream side of the first gas tank 331a, and a second pneumatic valve 334b ​​for controlling the supply of gas from the pressure regulating regulator 335 to the second gas tank 331b is provided on the upstream side of the second gas tank 331b. It should be noted that the second pneumatic valve 334b, the second gas tank 331b, the second pressure gauge 332b and the second valve 333b are provided to act on the small flow pipeline supplying the raw gas with a small flow. The first gas tank 331a and the second gas tank 331b have the same volume or different volumes.

[0031] like Figure 2 As shown, the nozzle 249a is arranged to stand upright in the space between the inner wall of the reaction tube 203 and the wafer 200, from the lower part of the inner wall of the reaction tube 203 to the upper part, along the stacking direction of the wafer 200. That is, the nozzle 249a is arranged along the wafer arrangement area in the area surrounding the wafer arrangement area in the horizontal direction on the side of the wafer arrangement area (loading area) where the wafers 200 are arranged (loaded). That is, the nozzle 249a is arranged on the side of the end (peripheral part) of each wafer 200 carried into the processing chamber 201 in a direction perpendicular to the surface (flat surface) of the wafer 200. A gas supply hole 250a for supplying gas is provided on the side of the nozzle 249a. The gas supply hole 250a opens toward the center of the reaction tube 203 and can supply gas to the wafer 200. A plurality of gas supply holes 250a are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided with the same opening pitch.

[0032] The front end of the gas supply pipe 232b is connected to the nozzle 249b. The nozzle 249b is disposed in the buffer chamber 237 as a gas dispersion space. Figure 2As shown, the buffer chamber 237 is located in a circular ring-shaped space between the inner wall of the reaction tube 203 and the wafer 200 when viewed from above, and is provided along the stacking direction of the wafer 200 in the portion from the lower portion to the upper portion of the inner wall of the reaction tube 203. That is, the buffer chamber 237 is formed by the buffer zone structure 300 along the wafer arrangement area in an area horizontally surrounding the wafer arrangement area on the side of the wafer arrangement area. The buffer zone structure 300 is composed of an insulating material such as quartz or SiC, and gas supply ports 302, 304 for supplying gas are formed on the wall surface of the buffer zone structure 300 formed in a circular arc shape. As shown in FIG. Figure 2 and Figure 3 As shown, the gas supply ports 302, 304 are opened toward the center of the reaction tube 203 at positions opposite to the plasma generation regions 224a, 224b between the rod-shaped electrodes 269, 270 and between the rod-shaped electrodes 270, 271 described later, respectively, and can supply gas to the wafer 200. A plurality of gas supply ports 302, 304 are provided from the bottom to the top of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch.

[0033] The nozzle 249b is arranged to stand upright from the lower part to the upper part of the inner wall of the reaction tube 203 along the stacking direction of the wafer 200. That is, the nozzle 249b is arranged along the wafer arrangement area on the inner side of the buffer structure 300, that is, in the area surrounding the wafer arrangement area in the horizontal direction on the side of the wafer arrangement area where the wafers 200 are arranged. That is, the nozzle 249b is arranged on the side of the end of the wafer 200 carried into the processing chamber 201 in a direction perpendicular to the surface of the wafer 200. A gas supply hole 250b for supplying gas is provided on the side of the nozzle 249b. The gas supply hole 250b opens toward the wall surface formed in the radial direction relative to the wall surface formed in the shape of an arc of the buffer structure 300, and can supply gas to the wall surface. As a result, the reaction gas will be dispersed in the buffer chamber 237, and will not be directly blown toward the rod-shaped electrodes 269 to 271, so that the generation of particles can be suppressed. Similar to the gas supply holes 250 a , a plurality of gas supply holes 250 b are provided from the lower portion to the upper portion of the reaction tube 203 .

[0034] Thus, in this embodiment, the gas is transported through the nozzles 249a, 249b and the buffer chamber 237, which are arranged in a longitudinal space that is annular in a plan view, that is, a cylindrical space, defined by the inner wall of the side wall of the reaction tube 203 and the ends of the plurality of wafers 200 arranged in the reaction tube 203. And, the gas is first ejected into the reaction tube 203 near the wafer 200 from the gas supply holes 250a, 250b and the gas supply ports 302, 304 opened in the nozzles 249a, 249b and the buffer chamber 237. And, the main flow of the gas in the reaction tube 203 is in a direction parallel to the surface of the wafer 200, that is, in a horizontal direction. With such a configuration, the gas can be uniformly supplied to each wafer 200, and the uniformity of the film thickness of the film formed on each wafer 200 can be improved. The gas flowing over the surface of the wafer 200, i.e., the residual gas after the reaction, flows toward the exhaust port, i.e., the exhaust pipe 231 described later. However, the flow direction of the residual gas can be appropriately determined according to the position of the exhaust port and is not limited to the vertical direction.

[0035] A raw material gas (first gas) containing a predetermined element, for example, silane raw material gas (first gas) containing silicon (Si) as a predetermined element, is supplied from the gas supply pipe 232a into the processing chamber 201 via the MFC 241a, the valve 243a, and the nozzle 249a.

[0036] Raw material gas refers to a raw material in a gaseous state, for example, a gas obtained by gasifying a raw material in a liquid state at room temperature and pressure, a raw material in a gaseous state at room temperature and pressure, etc. When the term "raw material" is used in this specification, it sometimes means "liquid raw material in a liquid state", sometimes means "raw material gas in a gaseous state", or sometimes means both of the meanings.

[0037] As the silane raw material gas, for example, a raw material gas containing Si and halogen, that is, a halosilane raw material gas can be used. A halosilane raw material is a silane raw material containing a halogen group. The halogen includes at least one selected from the group consisting of chlorine (Cl), fluorine (F), bromine (Br), and iodine (I). That is, the halosilane raw material contains at least one halogen group selected from the group consisting of a chlorine group, a fluorine group, a bromine group, and an iodine group. A halosilane raw material can also be referred to as a type of halide.

[0038] As the halosilane raw material gas, for example, a raw material gas containing Si and Cl, that is, a chlorosilane raw material gas can be used. As the chlorosilane raw material gas, for example, dichlorosilane (SiH2Cl2, abbreviated as: DCS) gas can be used.

[0039] The gas supply pipe 232b is configured to supply a nitrogen (N)-containing gas (second gas) as a reactant (reactant) containing an element different from the predetermined element, for example, as a reaction gas, into the processing chamber 201 via the MFC 241b, the valve 243b, and the nozzle 249b. As the N-containing gas, for example, a hydrogen nitride gas can be used. The hydrogen nitride gas can also be said to be a substance composed of only two elements, N and H, and acts as a nitriding gas, that is, an N source. As the hydrogen nitride gas, for example, an ammonia (NH3) gas can be used.

[0040] Inert gas such as nitrogen (N 2 ) gas is supplied from gas supply pipes 232 c and 232 d into the processing chamber 201 via MFCs 241 c and 241 d , valves 243 c and 243 d , gas supply pipes 232 a and 232 b , and nozzles 249 a and 249 b , respectively.

[0041] The raw material supply system as the first gas supply system is mainly composed of a gas supply pipe 232a, an MFC 241a, and a valve 243a. The reactant supply system (reactant supply system) as the second gas supply system is mainly composed of a gas supply pipe 232b, an MFC 241b, and a valve 243b. The inactive gas supply system is mainly composed of gas supply pipes 232c, 232d, MFCs 241c, 241d, and valves 243c, 243d. The raw material supply system, the reactant supply system, and the inactive gas supply system may also be simply collectively referred to as a gas supply system (gas supply unit).

[0042] (Plasma generation unit)

[0043] like Figure 2 and Figure 3As shown, in the buffer chamber 237, three rod-shaped electrodes 269, 270, and 271 having a slender structure made of a conductor are arranged from the bottom to the top of the reaction tube 203 along the deposition direction of the wafer 200. The rod-shaped electrodes 269, 270, and 271 are respectively arranged in parallel with the nozzle 249b. The rod-shaped electrodes 269, 270, and 271 are each covered and protected by an electrode protection tube 275 from the top to the bottom. Among the rod-shaped electrodes 269, 270, and 271, the rod-shaped electrodes 269, 271 arranged at both ends are respectively connected to the high-frequency power supply 273 via the integrator 272, and the rod-shaped electrode 270 is connected to the earth as a reference potential, thereby being grounded. That is, the rod-shaped electrodes connected to the high-frequency power source 273 and the grounded rod-shaped electrodes are alternately arranged, and the rod-shaped electrode 270 arranged between the rod-shaped electrodes 269 and 271 connected to the high-frequency power source 273 is used as the grounded rod-shaped electrode in common with the rod-shaped electrodes 269 and 271. In other words, the grounded rod-shaped electrode 270 is arranged to be sandwiched between the adjacent rod-shaped electrodes 269 and 271 connected to the high-frequency power source 273, and the rod-shaped electrode 269 and the rod-shaped electrode 270 are paired, and the rod-shaped electrode 271 and the rod-shaped electrode 270 are also paired, so that plasma is generated. That is, the grounded rod-shaped electrode 270 is used in common with the two rod-shaped electrodes 269 and 271 connected to the high-frequency power source 273 adjacent to the rod-shaped electrode 270. Furthermore, by applying high frequency (RF) power to the rod-shaped electrodes 269 and 271 from the high frequency power supply 273, plasma is generated in the plasma generation region 224a between the rod-shaped electrodes 269 and 270 and the plasma generation region 224b between the rod-shaped electrodes 270 and 271. The plasma generation unit (plasma generation device) as a plasma source is mainly composed of the rod-shaped electrodes 269, 270, 271 and the electrode protection tube 275. It is also conceivable to incorporate the integrator 272 and the high frequency power supply 273 into the plasma source. As described later, the plasma source functions as a plasma excitation unit (activation mechanism) that excites gas plasma, that is, excites (activates) it to a plasma state.

[0044] The electrode protection tube 275 is a structure that allows the rod-shaped electrodes 269, 270, and 271 to be inserted into the buffer chamber 237 in a state of being isolated from the atmosphere in the buffer chamber 237. If the O2 concentration inside the electrode protection tube 275 is equal to the O2 concentration of the outside air (atmosphere), the rod-shaped electrodes 269, 270, and 271 inserted into the electrode protection tube 275 will be oxidized by the heat of the heater 207. Therefore, by filling the electrode protection tube 275 with an inert gas such as N2 gas or purging the electrode protection tube 275 with an inert gas such as N2 gas using an inert gas purging mechanism, the O2 concentration inside the electrode protection tube 275 can be reduced, thereby preventing the oxidation of the rod-shaped electrodes 269, 270, and 271.

[0045] An exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is provided in the reaction tube 203. The exhaust pipe 231 is connected to a vacuum pump 246 as a vacuum exhaust device via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as an exhaust valve (pressure adjustment unit). The APC valve 244 is a valve configured in the following manner: by opening and closing the valve while the vacuum pump 246 is in operation, the vacuum exhaust in the processing chamber 201 and the vacuum exhaust stop can be performed, and further, by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is in operation, the pressure in the processing chamber 201 can be adjusted. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. It is also conceivable to incorporate the vacuum pump 246 into the exhaust system. The exhaust pipe 231 is not limited to being disposed in the reaction tube 203, and may be disposed in the header 209 similarly to the nozzles 249a and 249b.

[0046] Below the manifold 209, a sealing cap 219 as a furnace cover is provided, which can airtightly close the lower end opening of the manifold 209. The sealing cap 219 is configured to abut against the lower end of the manifold 209 from the lower side in the vertical direction. The sealing cap 219 is made of a metal material such as SUS, for example, and is formed in a disc shape. On the upper surface of the sealing cap 219, an O-ring 220b as a sealing member abutting against the lower end of the manifold 209 is provided. On the opposite side of the sealing cap 219 from the processing chamber 201, a rotating mechanism 267 for rotating the wafer box 217 described later is provided. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cap 219 and is connected to the wafer box 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer box 217. The sealing cap 219 is configured to be lifted and lowered in the vertical direction by the wafer box elevator 115 as a lifting mechanism vertically arranged outside the reaction tube 203. The wafer box elevator 115 is configured to be able to move the wafer box 217 into and out of the processing chamber 201 by lifting the sealing cap 219. The wafer box elevator 115 is configured as a conveying device (conveying mechanism) that conveys the wafer box 217, that is, the wafer 200 to the inside and outside of the processing chamber 201. In addition, a baffle 219s as a furnace cover is provided below the manifold 209, which can airtightly close the lower end opening of the manifold 209 while the sealing cap 219 is lowered by the wafer box elevator 115. The baffle 219s is made of metal such as SUS, for example, and is formed in a disc shape. An O-ring 220c as a sealing member that abuts against the lower end of the manifold 209 is provided on the upper surface of the baffle 219s. The opening and closing action (lifting and lowering action, rotation action, etc.) of the baffle 219s is controlled by the baffle opening and closing mechanism 115s.

[0047] (Substrate Support)

[0048] like Figure 1 As shown, the wafer box 217 as a support is configured to be able to neatly arrange and support multiple (e.g., 25 to 200) wafers 200 in a horizontal posture and in a state where the centers are aligned with each other in the vertical direction in multiple stages, that is, arranged at predetermined intervals. The wafer box 217 is made of, for example, a heat-resistant material such as quartz or SiC. At the bottom of the wafer box 217, a heat insulator 218 made of, for example, a heat-resistant material such as quartz or SiC is supported in multiple stages.

[0049] like Figure 2 As shown, a temperature sensor 263 as a temperature detector is provided inside the reaction tube 203. By adjusting the amount of current supplied to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 can be adjusted to a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203 in the same manner as the nozzles 249a and 249b.

[0050] (Control device)

[0051] Next, use Figure 4 The control device will be described. Figure 4 As shown, the controller 121 as a control unit (control device) is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O interface 121d. The RAM 121b, the storage device 121c, and the I / O interface 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 configured as, for example, a touch panel.

[0052] The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device is stored in the storage device 121c, and a process recipe that records the process, conditions, etc. of the film forming process described later and can be read out. The process recipe combines the various processes in the various processes (film forming processes) described later so that they are executed by the controller 121 and a predetermined result is obtained, and functions as a program. Hereinafter, process recipes, control programs, etc. are also simply referred to as programs. In addition, process recipes are also simply referred to as recipes. When the term "program" is used in this specification, it includes the case of only a single process recipe, the case of only a single control program, and the case of both. RAM121b is configured as a storage area (working area) for temporarily storing programs, data, etc. read by CPU121a.

[0053] The I / O interface 121d is connected to the above-mentioned MFC241a~241d, valves 243a~243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, integrator 272, high-frequency power supply 273, rotation mechanism 267, wafer box elevator 115, baffle switch mechanism 115s, first gas tank 331a, second gas tank 331b, first pressure gauge 332a, second pressure gauge 332b, first valve 333a, second valve 333b, first pneumatic valve 334a, second pneumatic valve 334b, pressure regulator 345, etc.

[0054] The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and at the same time, read out a recipe from the storage device 121c in response to input of an operation instruction from the input / output device 122. The CPU 121a is also configured to control the rotation mechanism 267, the flow rate adjustment of various gases by the MFCs 241a to 241d, the switching of the valves 243a to 243d, the adjustment of the high frequency power source 273 based on impedance monitoring, the switching of the APC valve 244 and the pressure adjustment by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, and the temperature adjustment of the heater 207 based on the temperature sensor 263 according to the contents of the read recipe. The wafer box 217 is rotated forward and reversely by the rotating mechanism 267, and its rotation angle and rotation speed are adjusted. The wafer box 217 is lifted and lowered by the wafer box elevator 115. The first gas tank 331a and the second gas tank 331b are heated. The first valve 333a is switched on and off based on the first pressure gauge 332a. The second valve 333b is switched on and off based on the second pressure gauge 332b. The first pneumatic valve 334a and the second pneumatic valve 334b ​​are switched on and off. The pressure adjustment action of the pressure regulator 345 is performed.

[0055] The controller 121 can be constructed by installing the above-mentioned program stored in an external storage device (for example, a disk such as a hard disk, an optical disk such as a CD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 123 into a computer. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, these are also simply collectively referred to as recording media. When this specification uses the term "recording medium", it includes the case of only a single storage device 121c, the case of only a single external storage device 123, or the case of both. It should be noted that providing a program to a computer does not require the use of an external storage device 123, and can also be done using the Internet or dedicated line communication methods.

[0056] (2) Substrate processing steps

[0057] Next, using the substrate processing apparatus 100, as one of the steps in the process of manufacturing a semiconductor device, a thin film is formed on the wafer 200, referring to Figure 5 and Figure 6 In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 121 .

[0058] Here, the following example is described: by performing the step of supplying DCS gas as a raw material gas and the step of supplying NH3 gas after plasma excitation as a reaction gas non-simultaneously, that is, non-synchronously, a predetermined number of times (one or more), an example of forming a silicon nitride film (SiN film) as a film containing Si and N on the wafer 200. In addition, for example, a predetermined film may be formed on the wafer 200. In addition, a predetermined pattern may be formed in the wafer 200 or the predetermined film.

[0059] In this manual, for convenience, Figure 6 The process flow of the film forming process is shown below.

[0060]

[0061] In this specification, when the term "wafer" is used, it includes the case where it means "the wafer itself" and the case where it means "a stack of a wafer and a predetermined layer, film, etc. formed on its surface." In this specification, when the term "wafer surface" is used, it includes the case where it means "the surface of the wafer itself" and the case where it means "the surface of a predetermined layer, etc. formed on the wafer." In this specification, when it is stated that "a predetermined layer is formed on the wafer," it includes the case where it means directly forming the predetermined layer "on the surface of the wafer itself" and the case where it means "forming the predetermined layer on the layer, etc. formed on the wafer." In this specification, when the term "substrate" is used, it has the same meaning as when the term "wafer" is used.

[0062] (Move-in step: S1)

[0063] After a plurality of wafers 200 are loaded into the wafer box 217 (wafer loading), the shutter 219s is moved by the shutter opening and closing mechanism 115s to open the lower end opening of the manifold 209 (open the shutter). Figure 1 As shown, the wafer cassette 217 supporting a plurality of wafers 200 is lifted by the wafer cassette elevator 115 and carried into the processing chamber 201 (wafer cassette loading). In this state, the sealing cap 219 is in a state of closing the lower end of the manifold 209 via the O-ring 220b.

[0064] (Pressure and temperature adjustment step: S2)

[0065] The vacuum pump 246 performs vacuum exhaust (decompression exhaust) so that the interior of the processing chamber 201, that is, the space where the wafer 200 is located, reaches a desired pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. The vacuum pump 246 is kept in operation at least until the film forming step described later is completed.

[0066] In addition, the heater 207 heats the wafer 200 in the processing chamber 201 to a desired temperature. At this time, the amount of power supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the desired temperature distribution is achieved in the processing chamber 201. The heating of the processing chamber 201 by the heater 207 is continued at least until the film forming step described later is completed. However, when the film forming step is performed at a temperature below room temperature, the heating of the processing chamber 201 by the heater 207 is not required. When only processing is performed at such a temperature, the heater 207 is not required, and the heater 207 may not be provided in the substrate processing device. In this case, the structure of the substrate processing device can be simplified.

[0067] Next, the rotation mechanism 267 starts rotating the wafer cassette 217 and the wafer 200. The rotation mechanism 267 continues rotating the wafer cassette 217 and the wafer 200 at least until the film forming step is completed.

[0068] (Raw material gas supply steps: S3, S4)

[0069] In step S3, DCS gas is supplied to the wafer 200 in the processing chamber 201. The first pneumatic valve 334a is opened, the DCS gas is filled into the first gas tank 331a and heated, and the second pneumatic valve 334b ​​is opened to fill the DCS gas into the second gas tank 331b and heat it. That is, in step S3, when the DCS gas is started to be supplied, the first gas tank and the second gas tank are both in a state where the DCS gas is filled with a predetermined amount and heated. Then, after a predetermined time, the first valve 333a is opened to supply the DCS gas in the first gas tank 331a to the MFC241a, and after the pressure measured by the first pressure gauge 332a reaches a predetermined pressure, the first valve 333a is closed, the second valve 333b is opened to supply the DCS gas in the second gas tank 331b to the MFC241a, and the first pneumatic valve 334a is opened to fill the DCS gas in the first gas tank 331a and heat it. Furthermore, after the pressure measured by the second pressure gauge 332b reaches a predetermined pressure, the second valve 333b is closed, the first valve 333a is opened to supply the DCS gas in the first gas tank 331 to the MFC 241a, and the second pneumatic valve 334b ​​is opened to fill the second gas tank 331b with DCS gas and heat it. By repeating these actions, the DCS gas is supplied to the MFC 241a at a large flow rate.

[0070] The valve 243a is opened to allow the DCS gas to flow into the gas supply pipe 232a. The DCS gas is flow-regulated by the MFC 241a, supplied to the processing chamber 201 from the gas supply hole 250a via the nozzle 249a, and exhausted by the exhaust pipe 231. At the same time, the valve 243c is opened to allow the N2 gas to flow into the gas supply pipe 232c. The N2 gas is flow-regulated by the MFC 241c, supplied to the processing chamber 201 together with the DCS gas, and exhausted by the exhaust pipe 231.

[0071] In order to suppress the intrusion of DCS gas into the nozzle 249b, the valve 243d is opened to flow N2 gas into the gas supply pipe 232d. The N2 gas is supplied into the processing chamber 201 through the gas supply pipe 232b and the nozzle 249b, and is exhausted by the exhaust pipe 231.

[0072] The supply flow rate of the DCS gas controlled by MFC241a is set to, for example, a flow rate in the range of 1 sccm to 6000 sccm, preferably a flow rate in the range of 3000 sccm to 5000 sccm. The supply flow rate of the N2 gas controlled by MFC241c, 241d is set to, for example, a flow rate in the range of 100 sccm to 10000 sccm, respectively. The pressure in the processing chamber 201 is set to, for example, 1 Pa to 2666 Pa, preferably a pressure in the range of 665 Pa to 1333 Pa. The time for which the wafer 200 is exposed to the DCS gas is set to, for example, a time of about 20 seconds per cycle. It should be noted that the time for which the wafer 200 is exposed to the DCS gas varies depending on the film thickness.

[0073] The temperature of the heater 207 is set to a temperature of, for example, 0° C. to 700° C., preferably 550° C. to 550° C., and more preferably 40° C. to 500° C. As in the present embodiment, by setting the temperature of the wafer 200 to 700° C. or less, further to 550° C. or less, and further to 500° C. or less, the amount of heat applied to the wafer 200 can be reduced, and the thermal experience of the wafer 200 can be well controlled.

[0074] By supplying DCS gas to the wafer 200 under the above conditions, a Si-containing layer is formed on the wafer 200 (the base film on the surface). The Si-containing layer may contain Cl and H in addition to the Si layer. On the outermost surface of the wafer 200, a Si-containing layer is formed by physical adsorption of DCS, chemical adsorption of a substance formed by partial decomposition of DCS, thermal decomposition of DCS to deposit Si, etc. That is, the Si-containing layer may be an adsorption layer (physical adsorption layer, chemical adsorption layer) of DCS, an adsorption layer (physical adsorption layer, chemical adsorption layer) of a substance formed by partial decomposition of DCS, or an accumulation layer (Si layer) of Si.

[0075] After the Si-containing layer is formed, the valve 243 is closed to stop supplying the DCS gas into the processing chamber 201. At this time, the APC valve 244 is kept open, and the processing chamber 201 is evacuated by the vacuum pump 246 to remove the unreacted DCS gas remaining in the processing chamber 201 or the DCS gas that contributes to the formation of the Si-containing layer, reaction by-products, etc. from the processing chamber 201 (S4). In addition, the valves 243c and 243d are kept open to maintain the supply of N2 gas into the processing chamber 201. The N2 gas acts as a purge gas. It should be noted that step S4 can also be omitted.

[0076] As raw material gases, in addition to DCS gas, tetrakis(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as: 4DMAS) gas, tris(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as: 3DMAS) gas, bis(dimethylamino)silane (Si[N(CH3)2]2H2, abbreviated as: BDMAS) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as: BDEAS), bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, abbreviated as: BTBAS) gas, dimethylaminosilane (DMAS) gas, diethylaminosilane (DEAS) gas, dipropylaminosilane (DPAS) gas can be appropriately used. Various aminosilane raw material gases such as monochlorosilane (SiH3Cl, abbreviated as: MCS) gas, trichlorosilane (SiHCl3, abbreviated as: TCS) gas, tetrachlorosilane (SiCl4, abbreviated as: STC) gas, hexachlorodisilane (Si2Cl6, abbreviated as: HCDS) gas, octachlorotrisilane (Si3Cl8, abbreviated as: OCTS) gas, and other inorganic halogen silane raw material gases such as monosilane (SiH4, abbreviated as: MS) gas, disilane (Si2H6, abbreviated as: DS) gas, and trisilane (Si3H8, abbreviated as: TS) gas, etc.; inorganic silane raw material gases that do not contain halogen groups such as monosilane (SiH4, abbreviated as: MS) gas, disilane (Si2H6, abbreviated as: DS) gas, and trisilane (Si3H8, abbreviated as: TS) gas.

[0077] As the inert gas, in addition to N 2 gas, an inert gas such as Ar gas, He gas, Ne gas, or Xe gas can be used.

[0078] (Reaction Gas Supply Steps: S5, S6)

[0079] After the film forming process is completed, NH 3 gas excited by plasma is supplied as a reaction gas to the wafer 200 in the process chamber 201 ( S5 ).

[0080] In this step, the opening and closing control of the valves 243b to 243d is performed in the same process as the opening and closing control of the valves 243a, 243c, and 243d in step S3. The NH3 gas is flow-regulated by the MFC241b and supplied to the buffer chamber 237 through the nozzle 249b. At this time, high-frequency power is supplied between the rod-shaped electrodes 269, 270, and 271. The NH3 gas supplied to the buffer chamber 237 is excited to a plasma state (is activated by being turned into plasma), supplied to the processing chamber 201 as an active species (NH3*), and exhausted by the exhaust pipe 231.

[0081] The supply flow rate of NH3 gas controlled by MFC241b is set to, for example, a flow rate of 100 sccm to 10000 sccm, preferably a flow rate of 1000 sccm to 2000 sccm. The high-frequency power applied to the rod-shaped electrodes 269, 270, 271 is set to, for example, a power in the range of 50 W to 600 W. The pressure in the processing chamber 201 is set to, for example, a pressure in the range of 1 Pa to 500 Pa. By using plasma, the NH3 gas can be activated even if the pressure in the processing chamber 201 is set to such a low pressure range. The time for supplying the active species obtained by plasma excitation of the NH3 gas to the wafer 200, that is, the gas supply time (irradiation time), is set to, for example, 1 second to 180 seconds, preferably a time in the range of 1 second to 60 seconds. The other processing conditions are set to the same processing conditions as those of S3 above.

[0082] By supplying NH3 gas to the wafer 200 under the above conditions, the Si-containing layer formed on the wafer 200 is plasma nitrided. At this time, the Si-Cl bond and Si-H bond of the Si-containing layer are cut by the energy of the NH3 gas after being excited by the plasma. Cl and H whose bond with Si is cut off will be separated from the Si-containing layer. Moreover, Si in the Si-containing layer having unbound electrons (dangling bonds) due to the separation of Cl and the like will be combined with N contained in the NH3 gas to form Si-N bonds. By performing such a reaction, the Si-containing layer is changed (modified) into a layer containing Si and N, that is, a silicon nitride layer (SiN layer).

[0083] It should be noted that when the Si-containing layer is modified into the SiN layer, it is necessary to supply NH3 gas by exciting the plasma. This is because even if NH3 gas is supplied in a non-plasma atmosphere, the energy required for nitriding the Si-containing layer is insufficient within the above temperature range, making it difficult to fully separate Cl and H from the Si-containing layer, and to fully nitridate the Si-containing layer to increase Si-N bonds.

[0084] After the Si-containing layer is converted into the SiN layer, the valve 243b is closed to stop the supply of NH3 gas. In addition, the supply of high-frequency power to the rod-shaped electrodes 269, 270, and 271 is stopped. And, according to the same processing process and processing conditions as step S4, the NH3 gas and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (S6). It should be noted that step S6 can also be omitted.

[0085] As the nitriding agent, that is, the N-containing gas excited by plasma, in addition to NH 3 gas, diazenium (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, N 3 H 8 gas, etc. can also be used.

[0086] As the inert gas, in addition to the N 2 gas, for example, various inert gases exemplified in step S4 can be used.

[0087] (Scheduled number of implementations: S7)

[0088] The above steps S3, S4, S5, and S6 are performed sequentially and non-simultaneously, i.e., asynchronously, as one cycle. By performing the cycle a predetermined number of times (n times), i.e., more than one time (S7), a SiN film of a predetermined composition and a predetermined film thickness can be formed on the wafer 200. The above cycle is preferably repeated multiple times. That is, it is preferred that the thickness of the SiN layer formed in each cycle is less than the desired film thickness, and the above cycle is repeated multiple times until the film thickness of the SiN film formed by stacking SiN layers reaches the desired film thickness.

[0089] (Atmospheric pressure restoration step: S8)

[0090] After the film forming process is completed, N2 gas as an inert gas is supplied from the gas supply pipes 232c and 232d to the processing chamber 201, and the gas is exhausted from the exhaust pipe 231. Thus, the processing chamber 201 is purged with the inert gas, and the gas remaining in the processing chamber 201 is removed from the processing chamber 201 (inert gas purging). Then, the atmosphere in the processing chamber 201 is replaced with the inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (S8).

[0091] (Move out step: S9)

[0092] Then, the sealing cap 219 is lowered by the wafer box elevator 115, the lower end of the manifold 209 is opened, and the processed wafer 200 is moved out of the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the wafer box 217 (wafer box unloading) (S9). After the wafer box is unloaded, the baffle 219s is moved so that the lower end opening of the manifold 209 is blocked by the baffle 219s via the O-ring 220c (close the baffle). After the processed wafer 200 is moved out to the outside of the reaction tube 203, it is taken out of the wafer box 217 (wafer release). It should be noted that after the wafer is released, the empty wafer box 217 can also be moved into the processing chamber 201.

[0093] (3) Effects of this embodiment

[0094] According to this embodiment, one or more of the following effects can be obtained.

[0095] (a) According to the present embodiment, a heating type gas tank is provided to seal the reactive gas supplied at substantially room temperature and heat it to increase the pressure, thereby increasing the supply pressure on the upstream side of the MFC.

[0096] (b) By providing two or more pipelines for the gas tank on the upstream side of the MFC, the MFC flow rate can be increased, and the gas can be supplied to the processing chamber at a stable large flow rate.

[0097] (Variant 1)

[0098] Next, based on Figure 8 A modification of the present embodiment will be described. In this modification, only the parts that are different from the above-described embodiment will be described below, and description of the same parts will be omitted.

[0099] In the present modification example 1, four gas tanks having the same volume are provided between the MFC 241 a and the pressure regulating regulator 345 , and four raw material gas supply lines are formed in parallel.

[0100] In the configuration of the embodiment, a third gas tank 331c, a fourth gas tank 331d, a third pressure gauge 332c for measuring the pressure of the third gas tank 331c, a fourth pressure gauge 332d for measuring the pressure of the fourth gas tank 331d, a third valve 333c for controlling the supply of gas from the third gas tank 331c to the MFC 241a via the gas supply pipe 232a, and a fourth valve 333d for controlling the supply of gas from the fourth gas tank 331d to the MFC 241a via the gas supply pipe 232a are further provided on the upstream side of the MFC 241a. A third pneumatic valve 334c for controlling the supply of gas from the pressure regulating regulator 345 to the third gas tank 331c is provided on the upstream side of the third gas tank 331c, and a fourth pneumatic valve 334d for controlling the supply of gas from the pressure regulating regulator 335 to the fourth gas tank 331d is provided on the upstream side of the fourth gas tank 331d. Thus, even if the flow rate is increased, the pressure on the upstream side of the MFC can be maintained high. Furthermore, by using the gas cylinders 331 a to 331 d of the same volume, the same amount of DCS gas supplied from the gas cylinders 331 a to 331 d to the MFC 241 a can be made to have the same supply flow rate, so that a stable DCS gas can be supplied.

[0101] (Variant 2)

[0102] Next, based on Fig. 9 Modification 2 of the present embodiment will be described. In this modification, only the parts that are different from the above-mentioned modification 1 will be described below, and the description of the same parts will be omitted.

[0103] In this modification 2, the volume of the four gas tanks in the modification 1 is changed to be composed of a large-volume gas tank and a small-volume gas tank. For example, the volume of the third gas tank 331c and the fourth gas tank 331d is made smaller than the volume of the first gas tank 331a and the second gas tank 331b. As a result, when the device continues to work for a longer time, there will be no situation where the heating in the gas tank is not timely, and the occurrence of adverse conditions caused by waiting for the heating time can be prevented.

[0104] The embodiments of the present disclosure have been described in detail above, but the present disclosure is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present disclosure.

[0105] For example, in the above embodiment, the supply of the reaction gas after the raw material is used as an example for explanation. The present disclosure is not limited to such a method, and the supply order of the raw material and the reaction gas may be reversed. That is, the raw material may be supplied after the reaction gas is supplied. By changing the supply order, the film quality and composition ratio of the formed film can be changed.

[0106] In the above-mentioned embodiments, an example of forming a SiN film on the wafer 200 is described. The present disclosure is not limited to such a method, and can also be appropriately applied when a Si-based oxide film such as a silicon oxide film (SiO film), a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), or a silicon oxynitride film (SiON film) is formed on the wafer 200, and when a Si-based nitride film such as a silicon carbonitride film (SiCN film), a silicon boron nitride film (SiBN film), or a silicon boron carbonitride film (SiBCN film) is formed on the wafer 200. In these cases, as a reaction gas, in addition to an O-containing gas, a C-containing gas such as C3H6, a N-containing gas such as NH3, or a B-containing gas such as BCl3 can be used.

[0107] In addition, the present disclosure can also be appropriately applied to the case where an oxide film or a nitride film containing metal elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), and tungsten (W) is formed on the wafer 200, that is, a metal oxide film or a metal nitride film is formed. That is, a TiO film, a TiN film, a TiOC film, a TiOCN film, a TiON film, a TiBN film, a TiBCN film, a ZrO film, a ZrN film, a ZrOC film, a ZrOCN film, a ZrON film, a ZrBN film, a ZrBCN film, a HfO film, a HfN film, a HfOC film, a HfOCN film, a HfON film, a HfBN film, a HfBCN film, a TaO film, a TaOC film, a TaOCN film, a TaON film, a TaBN film, a TaBCN film, The present disclosure can also be appropriately applied to NbO film, NbN film, NbOC film, NbOCN film, NbON film, NbBN film, NbBCN film, AlO film, AlN film, AlOC film, AlOCN film, AlON film, AlBN film, AlBCN film, MoO film, MoN film, MoOC film, MoOCN film, MoON film, MoBN film, MoBCN film, WO film, WN film, WOC film, WOCN film, WON film, MWBN film, WBCN film, etc.

[0108] In these cases, for example, as raw material gases, tetrakis(dimethylamino)titanium (Ti[N(CH3)2]4, abbreviated as: TDMAT) gas, tetrakis(ethylmethylamino)hafnium (Hf[N(C2H5)(CH3)]4, abbreviated as: TEMAH) gas, tetrakis(ethylmethylamino)zirconium (Zr[N(C2H5)(CH3)]4, abbreviated as: TEMAZ) gas, trimethylaluminum (Al(CH3)3, abbreviated as: TMA) gas, titanium tetrachloride (TiCl4) gas, hafnium tetrachloride (HfCl4) gas, etc. can be used. As reaction gases, the above-mentioned reaction gases can be used.

[0109] That is, the present disclosure can also be suitably applied when forming a semi-metal film containing a semi-metal element or a metal film containing a metal element. The process and process conditions of these film forming processes can be the same process and process conditions as the film forming processes shown in the above-mentioned embodiments and modified examples. Even in these cases, the same effects as those of the above-mentioned embodiments and modified examples can be obtained.

[0110] The recipes used in the film forming process are preferably prepared in accordance with the processing content, and are pre-stored in the storage device 121c via the telecommunication line and the external storage device 123. Then, when starting various processes, it is preferred that the CPU 121a appropriately selects a suitable recipe from the multiple recipes stored in the storage device 121c in accordance with the processing content. Thus, thin films of various film types, composition ratios, film qualities, and film thicknesses can be formed universally and reproducibly in one substrate processing device. In addition, the burden on the operator can be reduced, operational errors can be avoided, and various processes can be started quickly.

[0111] The above-mentioned recipe is not limited to the case of newly making, and can also be prepared by, for example, changing an existing recipe already installed in the substrate processing device. When changing the recipe, the changed recipe can be installed in the substrate processing device via a telecommunication line or a recording medium recording the recipe. In addition, the input / output device 122 of the existing substrate processing device can be operated to directly change the existing recipe already installed in the substrate processing device.

[0112] Possibility of Industrial Application

[0113] As described above, according to the present disclosure, it is possible to provide a technology capable of uniformly processing a substrate.

[0114] Explanation of symbols

[0115] 200: wafer, 201: processing chamber, reaction tube: 203, 241a: MFC, 243a: valve, 249a: nozzle, 331a: first gas tank, 331b: second gas tank, 332a: first pressure gauge, 332b: second pressure gauge, 333a: first valve, 333b: second valve, 334a: first pneumatic valve, 334b: second pneumatic valve, 335: regulator for pressure regulation.

Claims

1. A substrate processing device, comprising: a processing chamber for processing substrates, a first gas supply system including a plurality of gas tanks having the same volume filled with and heated by a first gas and a pressure gauge for measuring the pressure in the plurality of gas tanks, and supplying the first gas to the substrate in the processing chamber, and A control unit is configured to control the first gas supply system so that during the supply of the first gas, after the pressure measured by the pressure gauge reaches a predetermined pressure, the first gas is supplied to the substrate in the processing chamber while switching the plurality of gas tanks.

2. The substrate processing apparatus according to claim 1, wherein: The first gas supply system includes a mass flow controller connected to the plurality of gas tanks and controlling a flow rate of the first gas supplied into the processing chamber.

3. The substrate processing apparatus according to claim 2, wherein: The plurality of gas tanks are respectively provided with valves for controlling the supply of the first gas. During the supply of the first gas, the control unit controls the opening and closing of the valve based on the pressure value measured by the pressure gauge, and switches the plurality of gas tanks to supply the first gas.

4. The substrate processing apparatus according to claim 1, wherein: The invention comprises: a second gas supply system for supplying a second gas to the substrate in the processing chamber; The first gas is a raw material gas, and the second gas is a reaction gas.

5. The substrate processing apparatus according to claim 4, wherein: further comprising a third gas supply system for supplying a third gas into the processing chamber, The third gas is an inert gas.

6. The substrate processing apparatus according to claim 4, wherein: The process chamber includes a plasma generating unit which is vertically disposed in the process chamber and activates the reaction gas by plasma.

7. The substrate processing apparatus according to claim 6, wherein: The plasma generating unit includes a plurality of first rod-shaped electrodes connected to a high-frequency power source and a grounded second rod-shaped electrode.

8. The substrate processing apparatus according to claim 7, wherein: The plasma generating unit activates the reaction gas through the plurality of first rod-shaped electrodes and the second rod-shaped electrodes.

9. The substrate processing apparatus according to claim 1, wherein: The present invention comprises: a substrate support member for supporting the plurality of substrates in multiple stages in a vertical direction.

10. A method for manufacturing a semiconductor device, comprising: A process of carrying a substrate into a processing chamber of a substrate processing device, wherein the substrate processing device comprises: the processing chamber for processing the substrate, a first gas supply system for supplying the first gas to the substrate in the processing chamber, a plurality of gas tanks of the same volume filled with and heated by a first gas, and a pressure gauge for measuring the pressure in the plurality of gas tanks, and a second gas supply system for supplying a second gas to the substrate in the processing chamber, a step of supplying the first gas to the substrate in the processing chamber while switching the plurality of gas tanks after the pressure measured by the pressure gauge reaches a predetermined pressure during the supply of the first gas, and and supplying the second gas from the second gas supply system to the substrate in the processing chamber.

11. A computer-readable recording medium having a program recorded thereon for causing a substrate processing apparatus to execute the following process via a computer: a process of carrying a substrate into a processing chamber of the substrate processing device, wherein the substrate processing device comprises: the processing chamber for processing the substrate, a first gas supply system for supplying the first gas to the substrate in the processing chamber, a second gas supply system for supplying the second gas to the substrate in the processing chamber, and a plurality of gas tanks of the same volume filled with and heated by a first gas, and a pressure gauge for measuring the pressure in the plurality of gas tanks, During the supply of the first gas, after the pressure measured by the pressure gauge reaches a predetermined pressure, the first gas is supplied to the substrate in the processing chamber while switching the plurality of gas tanks, and A process of supplying the second gas from the second gas supply system to the substrate in the processing chamber.

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