Method for determining the temporal development of power semiconductor modules and their operating parameters

Abstract

The present invention relates to a power semiconductor module and a method for determining the temporal development of an operating parameter thereof. The invention relates to a power semiconductor module and a method for algorithmically determining the temporal development of at least one first operating parameter of the power semiconductor module having at least one power semiconductor element, wherein a plurality of input module parameters and at least one input operating parameter are used to determine the temporal development, wherein the input operating parameter is in particular a target temporal profile of an output current of the power semiconductor module, and wherein the temporal development of the first operating parameter is determined using two algorithms, wherein the first algorithm is used in a first, high frequency range of the output current, and wherein the second algorithm is used in a second, low frequency range of the output current.

Description

Technical Field

[0001] The present invention describes a method for algorithmically determining the temporal evolution of at least one first operating parameter of a power semiconductor module having at least one power semiconductor element, wherein a plurality of input module parameters and at least one input operating parameter are used to determine the temporal evolution. The present invention also describes a power semiconductor module having a substrate, a plurality of power semiconductor elements arranged on the substrate and connected in a suitable circuit manner, a load connection element, and a control device. Background Art

[0002] The existing technology within the company involves the use of multiple input module parameters and at least one input operating parameter within the scope of this method for determining the temporal evolution of such a first operating parameter. This input operating parameter is, in particular, a target temporal profile of the output current of the power semiconductor module. To save computing time and to obtain rapid results even on less powerful computing units, this method only roughly determines the first operating parameter. This is perfectly sufficient for many applications. However, this method is particularly prone to errors or cannot be used effectively during near-zero-Hz operation, i.e., when the output current is temporarily in the form of a direct current. Summary of the Invention

[0003] Based on the knowledge of the prior art, the object of the present invention is to specify a power semiconductor module and a method for algorithmically determining the temporal development of at least one first operating parameter of the power semiconductor module, which method allows efficient calculation over the entire frequency range of the input operating parameter.

[0004] According to the invention, this object is achieved by a method for algorithmically determining the temporal development of at least one first operating parameter of a power semiconductor module having at least one power semiconductor element, wherein a plurality of input module parameters and at least one input operating parameter are used to determine the temporal development, wherein the input operating parameter is in particular a target temporal profile of an output current of the power semiconductor module, and wherein the temporal development of the first operating parameter is determined using two algorithms.

[0005] wherein the first algorithm is used in a high first frequency range of the output current and wherein the first operating parameter is determined only once for one or more periods of the output current,

[0006] And wherein the second algorithm is used in a low second frequency range of the output current, and wherein the first operating parameter is determined multiple times for each period of the output current, or wherein, when the output current is in the form of a temporary direct current, the first operating parameter is determined multiple times within a time segment associated with the output current.

[0007] The output current of a power semiconductor module, known as a preferred input parameter, typically takes the form of a desired output current and therefore typically has a sinusoidal profile with a variable frequency. This is not a true current profile, for example, which cannot be detected by measurement technology at the output of the power semiconductor module. The output current is preferably described by a specific, single value of its effective value, which can vary over time, and a frequency value at the respective instant. Typically, there is no specific, single value after a constant time period, although this is possible in principle. Instead, it is preferred to predefine both values ​​in pairs once at least one of the effective value of the current and the associated frequency changes significantly.

[0008] It may be preferred if the first operating parameter is selected from the following group: the temperature of the most heavily loaded power semiconductor component, preferably the maximum, average or minimum temperature of all power semiconductor components, the power loss of the power semiconductor module.

[0009] It is also preferred that the input module parameters are selected from the following group: the voltage level of the power semiconductor element, the forward voltage of the power semiconductor element, the switching losses of the power semiconductor element, the geometry of the power semiconductor module, the thermal connection method of the power semiconductor module to the cooling device, and the further input operating parameters are selected from the following group: a single value or the development over time of the input voltage on the power semiconductor module, a single value or the development over time of the amplitude of the output voltage of the power semiconductor module, the development over time of the output voltage of the power semiconductor module, the development over time of the amplitude of the output current of the power semiconductor module.

[0010] Advantageously, when using the first algorithm, a temporal profile of a maximum value or a mean value of at least one first operating parameter or a temporal change of at least one first operating parameter is determined.

[0011] Advantageously, a single value of the first operating parameter is determined using the second algorithm, or a maximum value or a mean value curve over time is determined.

[0012] Preferably, the transition from the first algorithm to the second algorithm takes place at a fixed first value for the frequency of the output current, or the transition from the first algorithm to the second algorithm takes place at a variable first value for the frequency of the output current, which variable first value is determined by additional parameters, in particular by a change over time of the output voltage or the output current.

[0013] Preferably, the transition from the second algorithm to the first algorithm takes place at a fixed second value for the frequency of the output current, or the transition from the second algorithm to the first algorithm takes place at a variable first value for the frequency of the output current, which variable first value is determined by additional parameters, in particular by a change over time of the output voltage or the output current.

[0014] In this case, it is preferred that the fixed first value and the fixed second value exist within a range between 1 Hz and 100 Hz, in particular within a range between 2 Hz and 20 Hz.

[0015] Furthermore, according to the invention, this object is achieved by a power semiconductor module having a substrate, a plurality of power semiconductor elements arranged on the substrate and connected in a suitable circuit manner, a load connection element and a control device, and the above-described method implemented in the control device.

[0016] Advantageously, the method is implemented in an integrated circuit of the control device, in particular in an ASIC or an FPGA or a CPLD.

[0017] It may also be preferred to compare the first operating parameter determined using the method with a first measured parameter determined by measurement technology and to input the difference as a control parameter for further, future control of the power semiconductor module.

[0018] Of course, the features mentioned individually can each be present multiple times in the contact device according to the invention, unless this is unclear or essentially excluded or contradicts the idea of ​​the invention.

[0019] It should be understood that the various embodiments of the present invention, regardless of whether they are described in conjunction with a method or a power semiconductor module, can be implemented individually or in any combination to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the combination described, but also in other combinations or alone without departing from the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Further elaborations, advantageous details and features of the invention are given below in Figures 1 to 3 The description of the embodiments of the invention schematically shown in the accompanying drawings or their respective parts is derived.

[0021] Figure 1 shows the temporal development of a first operating parameter of a power semiconductor module determined by means of the method according to the invention;

[0022] Figure 2 A first embodiment of a power semiconductor module according to the present invention is shown;

[0023] Figure 3 A second embodiment of the power semiconductor module according to the invention is shown. DETAILED DESCRIPTION

[0024] Figure 1 The figure shows the temporal evolution of a first operating parameter of a power semiconductor module (here, a half-bridge module), determined using the method according to the present invention. Each power semiconductor module has an upper power semiconductor element and a lower power semiconductor element, each of which is designed as an IGBT. The method is based on the main variable input parameter, and here, in particular for the sake of simplicity, the only variable input parameter, which is the frequency response of the output current. This output current is a desired output current with a sinusoidal profile and a constant amplitude.

[0025] At the beginning of the first time interval T1, the output current (more precisely, the output alternating current) has a frequency of 50 Hz. This frequency continuously decreases and reaches 10 Hz at the end of the first time interval. At the beginning of the second time interval T2, the frequency is further continuously reduced until it reaches 0 Hz at time T21. This existing DC current is now maintained for approximately one second. At time T22, the output current is continuously increased to the output alternating current with a frequency of 10 Hz at the end of time interval T1. In the third time interval T3, the frequency of the output current is further continuously increased from 10 Hz to 50 Hz.

[0026] For the first time interval T1, the maximum temperature of one of the two identically loaded semiconductor components is shown as an envelope. For the second time interval T2, the specific temperature profile of one of the two power semiconductor components is shown. It can be seen that in the region where the output current is still sinusoidal, the temperature approximately follows this sinusoidal profile. Then, in the DC region, the current-carrying power semiconductor component continues to heat until the sinusoidal profile of the output current reappears. For the third time interval T3, the maximum temperature is again shown, as in time interval T1.

[0027] Figure 2A first embodiment of a power semiconductor module 1 according to the present invention is shown, showing a substrate 2 of the power semiconductor module 1 having three power semiconductor elements 3 arranged in parallel thereon and electrically conductively connected by conductor tracks. A temperature sensor 30 is arranged on a further conductor track. In this embodiment, without general restrictions, the substrate 2 is arranged directly on a cooling device 8 (here a liquid cooling device) and is connected thereto in a thermally conductive manner.

[0028] The power semiconductor module 1 further comprises a housing 6 (here a plastic housing), in which a control device 7 having an ASIC 70 is arranged. The method according to the invention is implemented in the ASIC 70. The ASIC 70 compares the temperature profile of one of the power semiconductor elements 3 determined by the method with a measurement variable determined by a temperature sensor 30 on the substrate 2.

[0029] The power semiconductor module 1 also has a connection element 5 (here a load connection element 50), which extends through the housing 6 to the outside and is used there for further connections. The power semiconductor module 1 also has an auxiliary or control connection element 52, which connects the substrate 2 to the control device 7. The power semiconductor module 1 also has an external auxiliary or control connection element 54, which connects the control device 7 to a higher-level control unit (not shown).

[0030] Figure 3 A second design of the power semiconductor module 1 according to the present invention is shown. The power semiconductor module 1 is similar to the power semiconductor module 1 according to the present invention. Figure 1 The power semiconductor module 1 differs from the power semiconductor module 1 in that the cooling device 8 is an air cooling device, and the control device 7 is not arranged inside the housing 6 of the power semiconductor module 1 but is arranged above the housing.

Claims

1. Method for algorithmically determining the temporal development of at least one first operating parameter of a power semiconductor module having at least one power semiconductor element, wherein: To determine the temporal development, a plurality of input module parameters and at least one input operating parameter are used, wherein the input operating parameter is in particular a target temporal profile of the output current of the power semiconductor module, and wherein the temporal development of the first operating parameter is determined with the aid of two algorithms. wherein the first algorithm is used in a high first frequency range of the output current and wherein the first operating parameter is determined only once for one or more cycles of the output current, And wherein the second algorithm is used in a low second frequency range of the output current, and wherein the first operating parameter is determined multiple times for each period of the output current, or wherein, when the output current is in the form of a temporary direct current, the first operating parameter is determined multiple times within a time segment associated with the output current.

2. The method according to claim 1, wherein The first operating parameter is selected from the group consisting of: the temperature of the most heavily loaded power semiconductor component, preferably the maximum, average or minimum temperature of all power semiconductor components, and the power loss of the power semiconductor module.

3. The method according to claim 1 or 2, wherein: The input module parameters are selected from the following group: the voltage level of the power semiconductor element, the on-state voltage of the power semiconductor element, the switching losses of the power semiconductor element, the geometry of the power semiconductor module, the thermal connection of the power semiconductor module to the cooling device, And additional input operating parameters are selected from the following groups: a single value or the temporal development of the input voltage at the power semiconductor module, a single value or the temporal development of the amplitude of the output voltage of the power semiconductor module, a temporal development of the output voltage of the power semiconductor module, a temporal development of the amplitude of the output current of the power semiconductor module.

4. The method according to claim 1 or 2, wherein: When using the first algorithm, the temporal profile of a maximum value or an average value of at least one first operating parameter or the temporal change of at least one first operating parameter is determined.

5. The method according to claim 1 or 2, wherein: Using the second algorithm, a single value of the first operating parameter is determined, or a maximum value or a mean value curve over time is determined.

6. The method according to claim 1 or 2, wherein: The transition from the first algorithm to the second algorithm takes place at a fixed first value for the frequency of the output current, or the transition from the first algorithm to the second algorithm takes place at a variable first value for the frequency of the output current, the variable first value being determined jointly by additional parameters, in particular by a change over time of the output voltage or the output current.

7. The method according to claim 1 or 2, wherein: The transition from the second algorithm to the first algorithm takes place at a fixed second value for the frequency of the output current, or the transition from the second algorithm to the first algorithm takes place at a variable first value for the frequency of the output current, the variable first value being determined jointly by additional parameters, in particular by a change over time of the output voltage or the output current.

8. The method according to claim 6, wherein: The fixed first value and the fixed second value exist within a range between 1 Hz and 100 Hz, in particular within a range between 2 Hz and 20 Hz.

9. The method according to claim 7, wherein: The fixed first value and the fixed second value exist within a range between 1 Hz and 100 Hz, in particular within a range between 2 Hz and 20 Hz.

10. A power semiconductor module (1) comprising a substrate (2), a plurality of power semiconductor elements (3) arranged on the substrate and connected in a circuit-suitable manner, a load connection element (50) and a control device (7), and a method according to any one of claims 1 to 9 implemented in the control device.

11. The power semiconductor module according to claim 10, wherein: The method is implemented in an integrated circuit (70) of the control device (7), in particular in an ASIC or an FPGA or a CPLD.

12. The power semiconductor module according to claim 10 or 11, wherein: A first operating parameter determined by means of the method is compared with a first measured parameter determined by measurement technology, and the difference is input as a control parameter for further, future control of the power semiconductor module.

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