Liquid processing device and control method of liquid processing device

Abstract

The present invention relates to a liquid processing device and a method for controlling the liquid processing device, which can uniformly process a substrate subjected to temperature influences from the atmosphere before being introduced into the liquid processing device. A liquid processing device supplies a processing liquid to a substrate to process the substrate, wherein the liquid processing device comprises: a chuck capable of holding and rotating the substrate; and a chuck temperature adjustment member capable of moving between an approach position close to or in contact with the chuck and a retracted position farther from the chuck than the approach position.

Description

Technical Field

[0001] The present disclosure relates to a liquid processing device and a method for controlling the liquid processing device. Background Art

[0002] In general, photolithography is used to form circuit patterns on, for example, semiconductor wafers (hereinafter sometimes referred to as wafers) during the manufacture of semiconductor devices. In photolithography, a coating and developing apparatus is known. A coating apparatus, one type of liquid processing apparatus, applies a resist solution, exposes a mask pattern, and then develops the mask pattern using a developing apparatus, thereby forming a circuit pattern.

[0003] For such a coating and developing treatment device, after the substrate is adjusted to a predetermined temperature using a cooling plate, the substrate is transported to the coating treatment assembly and then subjected to coating treatment (see Patent Document 1). However, in recent years, treatment is sometimes performed to form a special substrate with a thickness as thin as, for example, 200 μm or less. Such a special substrate is a substrate that is manufactured by grinding only the portion used as the region for forming the device from a substrate having a normal thickness, and a reinforcing annular convex portion is formed on the back surface corresponding to the remaining peripheral region surrounding the device region (see Patent Document 2). For such a special substrate, a film formed of an anti-etching liquid must also be formed uniformly within the surface.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2006-313788

[0007] Patent Document 2: Japanese Patent Application Laid-Open No. 2007-173487 Summary of the Invention

[0008] Problems to be solved by the invention

[0009] The technology disclosed herein can uniformly perform liquid processing on a substrate that is affected by the temperature of the atmosphere before being conveyed into a liquid processing apparatus.

[0010] Solutions for solving problems

[0011] A liquid processing device of a technical solution disclosed herein supplies processing liquid to a substrate to process the substrate, wherein the liquid processing device comprises: a chuck capable of holding and rotating the substrate; and a chuck temperature adjustment member capable of moving to a close position close to or in contact with the chuck and a retreat position farther away from the chuck than the close position.

[0012] Effects of the Invention

[0013] According to the technology disclosed in the present disclosure, it is possible to uniformly perform liquid processing on a substrate that is affected by the temperature of the atmosphere before being conveyed into a liquid processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a diagram for explaining a target substrate to be subjected to coating processing by the coating processing apparatus according to the embodiment.

[0015] Figure 2 It is an explanatory diagram schematically showing the internal structure of the coating treatment apparatus according to the first embodiment.

[0016] Figure 3 It is an explanatory diagram schematically showing the internal structure of the coating treatment apparatus according to the second embodiment.

[0017] Figure 4 It is an explanatory diagram schematically showing the internal structure of the coating treatment apparatus according to the third embodiment.

[0018] Figure 5 It is used to explain the coating treatment device of the embodiment. Figure 1 The diagram is for explaining a method of holding a substrate with respect to the surface of the target substrate on which the device is formed.

[0019] Figure 6 It is an explanatory diagram schematically showing the internal structure of the coating treatment apparatus according to the fourth embodiment.

[0020] Figure 7 is a diagram schematically showing the structure of a temperature distribution forming portion, Figure 7 (a) is a top sectional view, Figure 7 (b) is a side sectional view.

[0021] Figure 8 is a diagram schematically showing another configuration example of a temperature distribution forming portion, Figure 8 (a) is a top sectional view, Figure 8 (b) is a side view. DETAILED DESCRIPTION

[0022] When applying a coating process to a substrate by supplying a treatment liquid, such as a resist solution, the substrate is conventionally adjusted to a predetermined temperature, then transported to a coating process apparatus by a transport device and placed on a chuck, a substrate holding member within the coating process apparatus. The treatment liquid is then supplied from an upper nozzle to the substrate held on the chuck.

[0023] However, between the time a target substrate is transported to a coating treatment apparatus by a conveyor device and the time it is transported, the ambient environment can sometimes cause the substrate's temperature to rise above a preset temperature, resulting in uneven in-plane temperature. Consequently, when the target substrate is placed on a chuck and a treatment liquid is supplied, the desired treatment liquid film thickness may not be achieved, resulting in compromised film thickness uniformity. As will be described later, special substrates, where the device formation region is thinner than typical substrates, are particularly susceptible to the effects of ambient temperature, and improvements in this regard are desired.

[0024] Furthermore, in the case of development processing, the substrate temperature may fluctuate due to the ambient environment during the period from the time the target substrate is transported to the development processing apparatus by the transport device, thereby impairing the temperature uniformity within the substrate surface. In this case, depending on the type of resist, the CD uniformity after development may vary due to the temperature distribution within the substrate surface, and improvement in this aspect is also desired.

[0025] As described above, the technology disclosed herein performs uniform liquid processing such as uniform coating film formation and uniform development processing on a substrate affected by the temperature of the atmosphere until the substrate is fed into a liquid processing apparatus such as a coating apparatus and a developing apparatus.

[0026] (First embodiment)

[0027] Hereinafter, the first embodiment will be described in detail with reference to the accompanying drawings. In the following description, the same elements or elements having the same functions are denoted by the same reference numerals, and repeated descriptions are omitted. In addition, each embodiment describes a coating treatment device as an example of a liquid treatment device.

[0028] First, the commonly known resist coating and developing processing device (not shown) assembled by the coating processing device of the first embodiment is described. A carrier module is provided in the resist coating and developing processing device for processing wafers as semiconductor substrates. Moreover, a substrate conveying device takes out the wafer stored in a sealed substrate storage container, i.e., a carrier, and the carrier is placed on a loading table provided on the above-mentioned carrier module. In addition, the resist coating and developing processing device is provided with other substrate conveying devices, which are used to deliver the wafer to a processing module surrounded by a shell arranged adjacent to the carrier module, and to convey the wafer to a target processing component within the processing module. The other substrate conveying devices convey the wafers to the predetermined processing components in sequence for predetermined processing. Then, the processed wafers that have been taken out by the other substrate conveying devices after the last processing component has finished processing are returned from the processing module to the carrier by the substrate conveying device. The resist coating and developing processing device is provided with a cooling processing device and a coating processing device as a processing component. The wafer uniformly cooled over its entire area is received from the cooling treatment apparatus by the other substrate transport apparatus, and is transported to the coating treatment apparatus, where it is subjected to coating treatment.

[0029] First, use Figure 1 Wafers of a special shape that are to be processed by the coating processing module of the first embodiment will be described. Figure 1 Wafer W is manufactured by subjecting a conventional wafer to special processing. This wafer W is processed using, for example, wafer back grinding technology developed by DISCO. It is known as a substrate that has the following effects: The outer periphery of the wafer backside, for example, is left approximately 3 mm thick, while only the inner area is ground away, thereby preventing cracks or defects caused by warping.

[0030] The ground (polished) area of the wafer W that has been processed in this way, or its back side, becomes the device forming area D. The wafer is cut into a thickness in the range of 30μm to 150μm, for example, about 50μm, to form a recessed portion 2, and the portion that remains without being ground becomes an annular convex portion 1 and remains at a normal thickness, thereby achieving the effect of suppressing deformation. The width M of the annular convex portion 1 is processed to the desired width, but in order to obtain a larger device forming area D, the width is set to about 3mm. In addition, as Figure 1 As shown in (a), when the surface on the opposite side of the recessed portion 2 is used as the device forming region D surface, the annular convex portion 1 is formed into a downwardly convex shape. Figure 1 As shown in FIG. 5 ( b ), when the surface on which the recessed portion 2 is formed is used as the device formation region D surface, the annular projection 1 is formed in a shape that is convex upward.

[0031] Next, the coating treatment apparatus, or coating treatment module, of the first embodiment will be described. In the coating treatment module, a treatment liquid for forming a coating film is supplied onto a temperature-controlled substrate. The wafers coated with the treatment liquid are then transported to the thermal treatment module. The type of treatment liquid varies depending on the function of each coating film, including resists used as photosensitizers and insulating and protective film materials for devices such as polyimides.

[0032] use Figure 2 (a) Figure 2 (b) The coating treatment unit 10 of the first embodiment will be described.

[0033] Figure 2 (a) Figure 2 (b) are schematic side cross-sectional views for explaining the overall structure of the coating treatment assembly 10, Figure 2 (a) represents the standby state of the coating processing component 10, Figure 2 (b) shows the coating processing module 10 in the process of coating. The coating processing module 10 includes a chuck 11 that holds and rotates the wafer W; a nozzle 12 that supplies processing liquid to the surface of the wafer W; a cup 13 that surrounds the chuck 11 to collect liquid that splashes off the wafer W; a chuck temperature adjustment member 14 for adjusting the temperature of the chuck 11; and a control unit 15. The chuck 11 is rotatable by a rotation drive mechanism 16, such as a motor.

[0034] A support 21 is provided above the cup 13. The support 21 is fixed to, for example, a wall (not shown) of the coating process assembly 10 within the coating process assembly 10. A lifting mechanism, such as a cylinder member 22, is provided on the upper surface of the central portion of the support 21. The upper end of a retractable rod 22a of the cylinder member 22 is connected to a drive plate 23 located above the support 21.

[0035] A plurality of support members 24 extending through the support body 21 are provided on the lower surface of the drive plate 23. Furthermore, the aforementioned chuck temperature adjustment member 14 is mounted on this support member 24. Thus, by operating the cylinder member 22 to extend and retract the rod 22a, the chuck temperature adjustment member 14 can be freely moved closer to and further away from the upper surface of the chuck 11. In other words, it can be raised and lowered relative to the chuck 11. Furthermore, the chuck temperature adjustment member 14 can also abut against the chuck 11 when in closest proximity.

[0036] A flow path 14a for circulating temperature-controlled water is formed in the chuck temperature adjustment member 14, and the flow path 14a is connected to the flow path 24a formed in the support member 24. Therefore, the temperature-controlled water supplied from the temperature-controlled water source (not shown) can circulate through the flow path 24a of the support member 24 in the chuck temperature adjustment member 14 and return to the temperature-controlled water source again. According to this structure, the chuck temperature adjustment member 14 can be maintained at a desired temperature, for example, 22°C ± 1°C. That is, at this time, when the ambient temperature in the coating treatment component 10 is about 23°C, the chuck temperature adjustment member 14 is maintained at a temperature that is about 1°C to 2°C different from it. The flow path 14a having such a function and the temperature-controlled water are used to form the temperature adjustment mechanism 17.

[0037] Chuck temperature adjustment member 14 is made of, for example, metal or ceramic and has a disk shape. Furthermore, the lower surface of chuck temperature adjustment member 14, in other words, the surface facing chuck 11, is equal to or larger than the surface of chuck 11 on which wafer W is placed. This allows for rapid and uniform temperature adjustment of chuck 11.

[0038] The control unit 15 is composed of a computer having, for example, a CPU and a memory, and can execute various operations required for the coating process of the coating process unit 10, such as the vertical movement of the chuck temperature adjustment member 14, the movement of the nozzle 12, the supply and stop of the processing liquid, the rotation and stop of the chuck, etc., by executing programs stored in, for example, the memory. Alternatively, the various programs for implementing the coating process of the coating process unit 10 may be stored on a computer-readable storage medium such as a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), or a memory card, and loaded from the storage medium into the control unit 15.

[0039] The coating treatment component 10 of this embodiment has the above structure. Next, the operation of the coating treatment component 10 will be described. Figure 2 As shown in (a), the chuck temperature adjustment member 14 moves to a position close to or in contact with the chuck 11 (close position), thereby adjusting the temperature of the chuck 11 by the chuck temperature adjustment member 14. In this case, the gap (distance) between the chuck temperature adjustment member 14 and the wafer W when they are close to each other is set to, for example, 1 mm to 5 mm.

[0040] On the other hand, during the coating process, Figure 2As shown in (b), first, the chuck temperature adjustment member 14 is retracted to a position away from the chuck 11 (retracted position) by the action of the cylinder member 22. This retracted position is a position further away from the chuck 11 than the aforementioned approach position. Then, while the wafer W is held on the chuck 11, the nozzle 12 moves to above the center of the wafer W. Thereafter, a processing liquid is supplied from the nozzle 12 to the wafer W, and the chuck 11 rotates, thereby forming a coating film of the processing liquid on the surface of the wafer W by a so-called spin coating method.

[0041] During this process of forming a coating film on wafer W, wafer W is held on chuck 11, which has been temperature-controlled during standby. This allows wafer W to be maintained at a desired temperature. Consequently, the temperature of wafer W is maintained uniformly during the coating process, ensuring that the drying progress of the processing liquid on wafer W is uniform across the surface of wafer W, suppressing local variations in film thickness and thereby forming a uniform coating film. Consequently, a uniform coating film can be formed on wafer W, which is affected by the temperature of the surrounding atmosphere, until it is introduced into the coating process module.

[0042] After the coating film is formed on wafer W, nozzle 12 is retracted from above wafer W, and chuck temperature adjustment member 14 is moved again to a position close to or in contact with chuck 11 by cylinder member 22. Then, the temperature of chuck 11 is adjusted again in preparation for the next coating process.

[0043] (Second embodiment)

[0044] Next, use Figure 3 The coating treatment unit of the second embodiment will be described. In the description of the second embodiment, the points different from the first embodiment will be mainly described, and the description similar to the first embodiment will be omitted.

[0045] like Figure 3 As shown, the chuck temperature adjustment member 14 of the coating process module 30 of the second embodiment does not include the temperature adjustment mechanism 17 employed in the coating process module 10 of the first embodiment. In the coating process module 30 of the second embodiment, a support portion 31 is provided on the support body 21 to adjust the temperature of the chuck 11.

[0046] The support portion 31 is provided with a temperature adjustment mechanism 32. The temperature adjustment mechanism 32 may be, for example, a Peltier element or a flow path for temperature-controlled water.

[0047] According to the coating processing unit 30 of the second embodiment having the above structure, Figure 3As shown, the chuck temperature adjustment member 14 is brought close to or in contact with the support portion 31, thereby performing temperature adjustment on the chuck temperature adjustment member 14. In this way, by bringing the temperature-adjusted chuck temperature adjustment member 14 close to or in contact with the upper surface of the chuck 11, the temperature of the chuck 11 is adjusted by the chuck temperature adjustment member 14. In addition, even during the coating process in which the nozzle 12 is located above the wafer W, the temperature adjustment of the chuck temperature adjustment member 14 can be performed. Moreover, a member with a larger size can be provided on the support portion 31. In other words, by making the heat capacity determined by the size of the support portion 31 larger than the heat capacity of the chuck 11, the temperature adjustment of the chuck temperature adjustment member 14 can be performed quickly.

[0048] (Third embodiment)

[0049] Next, use Figure 4 A coating treatment module 40 of the third embodiment has a structure in which the temperature adjustment mechanism 17 of the coating treatment module 10 of the first embodiment and the temperature adjustment mechanism 32 of the coating treatment module 30 of the second embodiment are combined.

[0050] In other words, if Figure 4 As shown, the coating process assembly 40 of the third embodiment is similar to the coating process assembly 30 of the second embodiment, in that a support portion 31 is provided on the support body 21, and the support member 31 has a temperature adjustment mechanism 32. On the other hand, the coating process assembly 40 of the third embodiment is similar to the coating process assembly 10 of the first embodiment, in that the chuck temperature adjustment member 14 has a temperature adjustment mechanism 17. In other words, the coating process assembly 40 of the third embodiment has two temperature adjustment mechanisms 32 and 17.

[0051] In this way, according to the coating processing component 40 of the third embodiment having two temperature adjustment mechanisms 32 and 17, when the wafer W is not placed on the chuck 11, the chuck temperature adjustment component 14 can approach the chuck 11 and adjust the temperature of the chuck 11. In addition, when the wafer W is placed on the chuck 11, the chuck temperature adjustment component 14 can also be adjusted to the desired temperature by approaching or contacting the support part 31.

[0052] Thus, the use of two temperature adjustment mechanisms is considered to be useful in the following situations. For example, it is considered that: when the capacity of the temperature adjustment mechanism 17 of the chuck temperature adjustment member 14 is insufficient and the heat capacity of the chuck temperature adjustment member 14 is small, the temperature of the chuck temperature adjustment member 14 will change at the moment when the temperature adjustment of the chuck 11 is completed. In this case, it is necessary to return the temperature of the chuck temperature adjustment member 14 to the state before the temperature adjustment of the chuck 11 at the moment when the temperature adjustment of the chuck 11 is started and until the coating process is completed, but this takes time, and it is not preferable to extend the time until the coating process is completed, or to generate a time difference between the end of the coating process and the feeding of the next wafer W, thereby reducing production efficiency. Therefore, by using both the temperature adjustment mechanism 17 and the temperature adjustment mechanism 32, the temperature of the chuck temperature adjustment member 14 can be quickly adjusted to the desired temperature, thereby preventing a situation in which production efficiency is reduced.

[0053] (Fourth embodiment)

[0054] In the above embodiment, the following structure is adopted: the chuck temperature adjustment member 14 is arranged above the chuck 11 and is raised and lowered by the cylinder member 22 so as to be close to or in contact with the chuck 11, but it is not limited thereto. For example, Figure 6 As shown in the coating processing module 50 , the chuck temperature adjustment member 14 is rotatable relative to the chuck 11 in the lifting direction (the direction of the reciprocating arrow A in the figure), and can approach, contact, and move away from the chuck 11 .

[0055] In other words, in the coating processing assembly 50, one end of a support arm 51 is provided at one end of the chuck temperature adjustment member 14, and the other end of the support arm 51 is rotatably provided on the lifting portion 52. The lifting portion 52 is provided with a driving mechanism such as a motor (not shown) that rotates the other end of the support arm 51 in the lifting and lowering direction. In addition, the lifting portion 52 is freely raised and lowered by a lifting mechanism 53 such as a cylinder (in the direction of the reciprocating arrow B in the figure). In addition, the flow path 14a for the flow of temperature-controlled water formed in the chuck temperature adjustment member 14 is connected to the flow path 51a formed in the support arm 51, and temperature-controlled water from a temperature-controlled water source (not shown) circulates in these flow paths 51a and 14a.

[0056] According to the coating processing component 50 having this structure, Figure 6 As shown, the chuck temperature adjustment member 14 is laid down and moved to a close position, so that the chuck temperature adjustment member 14 can be brought close to or in contact with the chuck 11, thereby adjusting the temperature of the chuck 11. Figure 6As shown by the dotted line, the chuck temperature adjustment member 14 is raised, thereby being moved to a retracted position away from the chuck 11. Furthermore, to more reliably prevent contamination of the chuck temperature adjustment member 14 due to scattering of the coating liquid during the coating process, the lifting mechanism 53 can be operated to lower the chuck temperature adjustment member 14 while the chuck temperature adjustment member 14 is held raised.

[0057] (Temperature distribution forming part)

[0058] In the case where the temperature distribution of the chuck 11 to be temperature-adjusted is deviated in the state before adjustment, or conversely, in the case where the chuck 11 itself is to be actively formed into a temperature distribution, it is also possible to Figure 7 、 Figure 8 As shown, the chuck temperature adjustment member 14 is provided with temperature distribution forming parts 70 and 80 for correcting such deviations and actively forming temperature distribution.

[0059] In other words, if Figure 7 The temperature distribution forming portion 70 shown is an example of a structure for creating temperature differences between radially different regions of the chuck temperature adjustment member 14. An inlet 71 is provided on the outer periphery of the temperature-controlled water flow path 14a, and an outlet 72 is provided on the central side. This allows the flow path between inlet 71 and outlet 72 to form a loop within the chuck temperature adjustment member 14. This structure allows heat exchange with the chuck temperature adjustment member 14 on the upstream side (the outer periphery), resulting in a relatively reduced temperature adjustment effect on the downstream side (the central side). Therefore, this structure is effective, for example, when cooling the chuck 11 to lower the temperature on the outer periphery compared to the central portion. Furthermore, this structure can actively create a temperature distribution that lowers the temperature on the outer periphery of the chuck 11. Conversely, to achieve a higher temperature on the outer periphery than the central portion of the chuck 11, it is sufficient to provide inlet 71 on the central side and outlet 72 on the outer periphery. Furthermore, the temperature gradient can be fine-tuned by adjusting the cross-sectional shape of the flow path or the set flow rate.

[0060] On the other hand, for the case where temperature differences are achieved in different regions in the circumferential direction, e.g. Figure 8 As in the temperature distribution forming section 80 shown in FIG. 1 , for example, a plurality of Peltier elements 81 to 86 are arranged separately in the circumferential direction, and the set temperatures of the respective Peltier elements can be made different. Figure 8 In the example of FIG. 8 , the temperature distribution forming portion 80 is composed of sector-shaped Peltier elements 81 to 86 of the same shape and size and a circular Peltier element 87 disposed in the center thereof.

[0061] According to the temperature distribution forming unit 80 having such a structure, when there is a deviation in the temperature distribution in the chuck 11, for example, when there is a temperature difference between the left and right halves, such a deviation can be corrected by operating only the Peltier elements 81 to 83.

[0062] The structure, shape, and arrangement of the flow path 14a and the Peltier elements 81 to 87 constituting the temperature distribution forming portion are not limited to Figure 7 、 Figure 8 For example, the flow path 14a can be configured as a spirally circulating flow path, or the flow paths can be arranged longitudinally or transversely. The Peltier element can also be combined with a square Peltier element. Of course, a flow path and Peltier element can also be combined to form a temperature distribution forming portion.

[0063] As already mentioned, for wafers with special shapes, such as Figure 1 As shown in (a), when the surface on the opposite side of the recessed portion 2 is used as the device forming region D surface, the annular convex portion 1 becomes a downwardly convex shape, as shown in FIG. Figure 1 As shown in (b), when the surface forming the concave portion 2 is used as the device forming area D surface, the annular convex portion 1 becomes a shape convex upward. In this regard, the coating treatment components 10, 30, and 40 of the above-mentioned first to third embodiments are also as shown. Figure 5 (a) Figure 5 As shown in (b), there is a surface of the wafer W where the device forming region D is formed, in other words, the surface where the coating process is performed is the surface where the recessed portion 2 is formed ( Figure 5 (a)) or the surface on the opposite side of the recess 2 ( Figure 5 (b)) situation.

[0064] In such a case, the coating process is also performed by replacing the surface held by the chuck 11 corresponding to the orientation of the device forming area D. In either case, it is also preferred that the size of the upper surface of the chuck 11 is formed to be approximately the size of the entire surface of the inner peripheral portion of the annular convex portion 1 of the wafer W forming the recess 2. In this way, no matter which surface is held, most of the surface of the wafer W to be held can be in contact with the chuck 11, so that the temperature of the wafer W can be adjusted, such as cooling or heating, while suppressing uneven temperature distribution. The following scheme can be proposed: at this time, the area of the upper surface of the chuck 11 is formed to be, for example, 80 to 99% of the area of the inner side of the wafer (the entire range of the inner peripheral portion).

[0065] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the claims and the spirit thereof.

Claims

1. A liquid processing apparatus for processing a substrate by supplying a processing liquid to the substrate, wherein: The liquid handling device has: a chuck capable of holding and rotating the substrate; a chuck temperature adjustment member movable to a close position close to or in contact with the chuck and a retreat position farther from the chuck than the close position; as well as a control unit that switches between an operation of bringing the chuck temperature adjustment member close to or in contact with the chuck to adjust the temperature of the chuck and an operation of moving the chuck temperature adjustment member away from the chuck without adjusting the temperature of the chuck, The control unit is configured to: when the substrate is not being processed, move the chuck temperature adjustment member close to or in contact with the chuck that does not hold the substrate to adjust the temperature of the chuck; And when processing the substrate, the chuck temperature adjustment member is moved away from the chuck without adjusting the temperature of the chuck, and the substrate is held on the chuck while the processing liquid is supplied to the substrate.

2. The liquid processing device according to claim 1, wherein A surface of the chuck temperature adjustment member that faces the upper surface of the chuck at the close position has an area that is larger than an area of the upper surface of the chuck.

3. The liquid processing device according to claim 1, wherein The liquid processing apparatus includes a support portion provided with a temperature adjustment mechanism. The temperature adjustment mechanism is provided near the retreat position of the chuck temperature adjustment member and adjusts the temperature of the chuck temperature adjustment member when the chuck temperature adjustment member approaches or contacts the temperature adjustment mechanism.

4. The liquid processing device according to claim 1, wherein The control unit is configured to adjust the temperature of the chuck when the substrate is not mounted on the chuck.

5. The liquid processing apparatus according to any one of claims 1 to 3, wherein The substrate has an inner peripheral portion, which has an area of 90% or more on the substrate surface at a position inside the outer peripheral portion including the substrate peripheral edge portion and is formed thinner than the outer peripheral portion. The chuck has a surface facing 80% to 99% of the entire range of the inner peripheral portion.

6. The liquid processing apparatus according to any one of claims 1 to 3, wherein: The chuck temperature adjustment member includes a temperature distribution forming portion that forms a relative temperature difference between a plurality of regions that are coplanar with a surface facing the chuck when the chuck is in the close position.

7. A method for controlling a liquid processing device, wherein: In a liquid processing apparatus for processing a substrate by supplying a processing liquid to the substrate using the liquid processing apparatus, The liquid processing apparatus includes: a chuck that holds and rotates a substrate; and a chuck temperature adjustment member that is movable to a close position close to or in contact with the chuck and a retreat position farther from the chuck than the close position. The control method of the liquid treatment device controls the liquid treatment device to perform the following processes: a step of adjusting the temperature of the chuck by bringing the chuck temperature adjustment member close to or in contact with the chuck that does not hold the substrate while the substrate is on standby and not being processed; a step of moving the chuck temperature adjustment member away from the chuck and not adjusting the temperature of the chuck when processing the substrate; as well as and supplying the processing liquid to the substrate while the substrate is held by the chuck.

8. The method for controlling a liquid treatment device according to claim 7, wherein: The control method of the liquid processing apparatus controls the following manner: after the chuck temperature adjustment member moves away from the chuck, the nozzle for supplying the processing liquid moves to a supply position above the substrate, and the processing liquid is supplied from the nozzle to the substrate.

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