Heated ceramic panels

Abstract

A device for distributing gas within a processing chamber is disclosed. The device includes a main body formed by a distribution portion surrounded by a coupling portion. A heater is disposed within the distribution portion to heat the main body to a high temperature. A bridge member extends between the coupling portion and the distribution portion. The bridge member limits heat transfer between the distribution portion and the coupling portion.

Description

Background Art Technical Field

[0002] The present disclosure relates generally to apparatus for distributing gases in a process chamber and, more particularly, to a heated ceramic faceplate.

[0003] Description of Related Technology

[0004] In the manufacture of integrated circuits, deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) are used to deposit films of various materials on semiconductor substrates. In other operations, layer modification processes such as etching are used to expose portions of a layer for further deposition. Typically, these processes are used in a repetitive manner to manufacture the various layers of an electronic device, such as a semiconductor device.

[0005] As the demand for improved devices continues to grow, so too does the need for methods used to manufacture such devices. Chemicals used in new processes, such as precursor gases, continue to require increased process control, such as temperature control, to conduct such processes. Consequently, there is a need in the art for process chamber components that can provide increased temperature control for device fabrication and processing. Summary of the Invention

[0006] In one embodiment, a panel includes a body formed of a heater layer and an electrode layer. An outer diameter of the electrode layer defines a distribution portion of the body. A plurality of apertures are formed through the body within the distribution portion for allowing gas to pass therethrough. A heater is disposed within the heater layer to heat the body. A bridge member surrounds the distribution portion and couples the distribution portion to a coupling portion.

[0007] In another embodiment, a panel includes a body, wherein the body is formed from an electrode layer, a heater layer, and a ground layer. A bonding layer is disposed between the electrode layer and the heater layer, and between the heater layer and the ground layer. A plurality of apertures are formed through the body. Each aperture has a first end and a second end, wherein the first end is located at an outer surface of the body, and the second end of each aperture is fluidically coupled to one or more nozzles disposed in the electrode layer. The body further includes a thermal choke.

[0008] In another embodiment, a gas distribution device includes a ceramic body. The body is formed of a first layer, a second layer, and a third layer. A plurality of apertures are formed through the ceramic body. A heater is disposed in the first layer, and an electrode is disposed in the second layer. A bridge portion extends perpendicularly from the third layer. A coupling portion is disposed at an end of the bridge portion opposite the third layer. The bridge portion is a thermal choke that limits heat transfer from the heater to the coupling portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order that the manner in which the above-mentioned features of the present disclosure are employed may be understood in detail, a more particular description of the present disclosure, briefly summarized above, may be made with reference to its embodiments, some of which are illustrated in the drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of the scope, as the present disclosure may admit to other equally effective embodiments.

[0011] Figure 1 A schematic arrangement of an exemplary process chamber according to one embodiment of the present disclosure is shown.

[0012] Figure 2 A cross-section of a schematic arrangement of an exemplary panel according to one embodiment of the present disclosure is shown.

[0013] Figure 3 A cross-section of a schematic arrangement of an exemplary panel according to another embodiment of the present disclosure is shown.

[0014] Figure 4 A cross-section of a schematic arrangement of an exemplary panel according to another embodiment of the present disclosure is shown.

[0015] Figure 5 A cross-section of a schematic arrangement of an exemplary panel according to another embodiment of the present disclosure is shown.

[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0017] The present disclosure generally relates to an apparatus for distributing gases in a process chamber. More specifically, aspects of the present disclosure relate to a ceramic faceplate. The faceplate comprises a ceramic body formed by a distribution portion surrounded by a coupling portion. A heater is disposed within the distribution portion to heat the body to a high temperature. A bridge member extends between the coupling portion and the distribution portion. The bridge member limits heat transfer between the distribution portion and the coupling portion.

[0018] Figure 1A schematic cross-sectional view of an exemplary process chamber 100 is shown in accordance with one embodiment. The process chamber 100 has a main body 102 having sidewalls 104 and a base 106. A lid assembly 108 is coupled to the main body 102 to define a process volume 110 therein. The main body 102 is formed of a metal such as aluminum or stainless steel, although any material suitable for use with the process therein may be utilized. A substrate support 112 is disposed within the process volume 110 and supports a substrate W during processing within the process chamber 100. The substrate support 112 includes a support body 114 coupled to a shaft 116. The shaft 116 is coupled to a lower surface of the support body 114 and extends out of the main body 102 through an opening 118 in the base 106. The shaft 116 is coupled to an actuator 120 to vertically move the shaft 116 and the support body 114 coupled thereto between a substrate loading position and a processing position. The vacuum system 130 is fluidly coupled to the process volume 110 to evacuate gases from the process volume 110 .

[0019] To facilitate processing of substrates W in the process chamber 100, the substrates W are disposed on an upper surface of the support body 114 opposite the shaft 116. A port 122 is formed in the sidewall 104 to facilitate entry and exit of the substrates W into the process volume 110. A door 124 (such as a slit valve) is actuated to selectively enable the substrates W to pass through the port 122 for loading onto or removal from the substrate support 112. An electrode 126 is disposed within the support body 114 and electrically coupled to a power source 128 via the shaft 116. The electrode 126 is selectively biased by the power source 128 to generate an electromagnetic field to clamp the substrates W to the upper surface of the support body 114 and / or facilitate plasma generation or control. In some embodiments, a heater 190 (such as a resistive heater) is disposed within the support body 114 to heat the substrates W disposed thereon.

[0020] Cover assembly 108 includes a cover 132, a separator plate 134, and a faceplate 136. Separator plate 134 includes a recessed, circular distribution portion 160 surrounded by an annular extension 162. Separator plate 134 is disposed between cover 132 and faceplate 136 and is coupled to each of cover 132 and faceplate 136 at annular extension 162. Cover 132 is coupled to an upper surface of annular extension 162, opposite body 102. Faceplate 136 is coupled to a lower surface of annular extension 162. A first volume 146 is defined between separator plate 134 and cover 132. A second volume 148 is defined between separator plate 134 and faceplate 136. A plurality of apertures 150 are formed through distribution portion 160 of separator plate 134 and facilitate fluid communication between first volume 146 and second volume 148.

[0021] An inlet port 144 is disposed within the cover 132. The inlet port 144 is fluidly coupled to a gas conduit 138. The gas conduit 138 enables gas to flow from a first gas source 140, such as a process gas source, through the inlet port 144 into the first volume 146. A second gas source 142, such as a clean gas source, is optionally coupled to the gas conduit 138.

[0022] In one example, a first gas source 140 supplies a first gas (such as an etching gas or a deposition gas) to the process volume 110 to etch or deposit a layer on the substrate W. A second gas source 142 supplies a second gas (such as a cleaning gas) to the process volume 110 to remove particulate deposits from the interior surfaces of the process chamber 100 (such as the surface of the sidewall 104 facing the process volume 110). A seal 152 (such as an O-ring) is disposed between the blocker plate 134 and the lid 132 at an upper surface of an annular extension 162 surrounding the first volume 146 to isolate the process volume 110 from the external environment, thereby enabling a vacuum in the process volume 110 to be maintained by the vacuum system 130.

[0023] The faceplate 136 includes a distribution portion 164 and a coupling portion 166 disposed radially outward from the distribution portion 164. The distribution portion 164 is disposed between the process volume 110 and the second volume 148. The coupling portion 166 surrounds the distribution portion 164 at the periphery of the faceplate 136. To facilitate processing of substrates W, an RF generator 180 is optionally coupled to the faceplate 136 to excite gas from the first gas source 140, the second gas source 142, or both the first gas source 140 and the second gas source 142 to form ionized species. In one example, the RF generator 180 and the faceplate 136, in conjunction with the electrode 126 and the power supply 128, facilitate generation of a capacitively coupled plasma within the process volume 110.

[0024] One or more apertures 154 are provided through the faceplate 136 within the distribution portion 164. The apertures 154 enable fluid communication between the process volume 110 and the second volume 148. During operation, gas flows from the inlet port 144 into the first volume 146, through the apertures 150 in the blocker plate 134, and into the second volume 148. From the second volume 148, the gas flows through the apertures 154 in the faceplate 136 into the process volume 110. The arrangement and size of the apertures 154 enable selective flow of gas into the process volume 110 to achieve a desired gas distribution. For example, for certain processes, uniform distribution across the substrate may be desired.

[0025] One or more heaters 174 are disposed in the faceplate 136. In one embodiment, the heater 174 is disposed radially outward from the aperture 154. The heater 174 can be any device capable of providing heat to the faceplate 136. In one example, the heater 174 comprises a resistive heater that can be embedded within and surround the aperture 154 of the faceplate 136. In another example, the heater 174 is a channel in fluid communication with a fluid source (not shown) formed in the faceplate 136 that circulates a heating fluid through the channel. The heater 174 heats the faceplate to a high temperature, such as 300°C or higher. For example, the heater 174 can heat the faceplate to 400°C, 500°C, or higher. Raising the temperature of the faceplate to a temperature of 300°C, 400°C, or 500°C during processing (such as during a chemical vapor deposition (CVD) process) results in improved deposition on the substrate W and improved processing of the substrate W.

[0026] A seal 170 is disposed between the face plate 136 and the blocker plate 134 to enable the vacuum within the process volume 110 to be maintained. A second seal 156 is disposed between the face plate 136 and the sidewall 104. Figure 1 In one embodiment, both seals 156 and 170 are O-rings formed from a material such as polytetrafluoroethylene (PTFE), rubber, or silicone. Other sealing designs are also contemplated, such as sheet gaskets or adhesives. For example, during planned preventative maintenance of the process chamber, the O-rings can be quickly repaired or replaced, thereby significantly reducing maintenance downtime for the process chamber.

[0027] Figure 2 A schematic cross-sectional arrangement of a panel 236 according to one embodiment is shown. Panel 236 may be used instead of Figure 1 . Here, the panel 236 has a body 200 formed by an electrode layer 202 and a heater layer 204 coupled together by a bonding layer 206. In this embodiment, the electrode layer 202 and the heater layer 204 are separate components coupled together to form the body 200. However, a single integral component can also be used to form the body 200. The bonding layer 206 is a thermally conductive layer disposed between the heater layer 204 and the electrode layer 202. In one example, the bonding layer 206 is a diffusion bond. The bonding layer 206 can be any suitable bonding type that provides sufficient bonding between the electrode layer 202 and the heater layer 204 while also sufficiently conducting heat between the electrode layer 202 and the heater layer 204.

[0028] The distribution portion 164 is partially defined by the top surface 210 and the bottom surface 212. The outer diameter of the distribution portion 164 is defined by the outer diameter of the electrode layer 202. The aperture 154 is formed through the body 200 in the distribution portion 164. The aperture 154 is formed through both the electrode layer 202 and the heater layer 204 between the top surface 210 and the bottom surface 212. Here, the apertures 154 are arranged in a honeycomb array so that the center of the first aperture is spaced apart from the center of the adjacent second aperture by a distance of about 2 mm to about 6 mm (such as about 3 mm to about 5 mm). For example, the apertures 154 are arranged so that the center of the first aperture is spaced apart from the center of the adjacent second aperture by a distance of 4 mm. In another example, the center-to-center distance of adjacent apertures 154 is about 5 mm to about 6 mm. It should be noted that other arrangements, such as a grid or mesh layout, can be used.

[0029] The electrode layer 202 is formed of a ceramic material such as aluminum nitride. The electrode 208 is disposed within the electrode layer 202. The electrode 208 is formed within the electrode layer 202 during the manufacture of the electrode layer. The electrode 208 is electrically coupled to a power source such as Figure 1 RF generator 180 is provided to supply current to electrode 208. During operation, electrode 208 is used to form and / or control a plasma for processing a substrate using the current provided by the power supply. As shown, portions of electrode 208 are disposed between apertures 154. Using conventional methods of manufacturing panels, the short center-to-center distance between adjacent apertures 154 prevents the electrode from being positioned between adjacent apertures 154. However, by forming electrode layer 202 separately from heater layer 204, electrode 208 can be positioned between adjacent apertures 154, thereby improving control of the plasma formed using electrode 208.

[0030] The heater layer 204 is also formed of a ceramic material, such as aluminum nitride. A ground electrode 218 is optionally provided in the heater layer 204 in the dispensing portion 164. The ground electrode 218 prevents the electric field generated by the electrodes 208 in the electrode layer 202 from forming a plasma in a region typically located above the body 200 and adjacent the top surface 210.

[0031] Heaters 174 are disposed within heater layer 204 radially surrounding apertures 154. Heaters 174 are coupled to a heat source 214, such as an electrical source in the case of a resistive heater, or a fluid source in the case of a fluid channel. During operation, heaters 174 are activated by heat source 214 to raise the temperature of distribution portion 164 to an elevated temperature, for example, greater than about 300° C., such as 350° C. or higher. The heat provided by heaters 174 is conducted from heaters 174, particularly through the material between adjacent apertures 154, and dispersed throughout heater layer 204 and heater layer 204. As a result, the uniformity of heating of distribution portion 164 is greatly increased. By raising the temperature of distribution portion 164, gas passing through apertures 154 is heated by body 200.

[0032] exist Figure 2 In an embodiment, the coupling portion 166 is arranged to radially surround the distribution portion 164. Here, the distribution portion 164 defines a disc-shaped body. The coupling portion 166 is an annular flange arranged around the distribution portion 164. The bridge 216 extends between the distribution portion 164 and the coupling portion 166 and connects the distribution portion 164 and the coupling portion 166. The bridge 216 has a thickness T1 that is reduced relative to the thickness of the coupling portion 166 and / or the distribution portion 164. By limiting the surface area and / or mass for heat transfer, the bridge 216 acts as a thermal choke to prevent heat transfer between the distribution portion 164 and the coupling portion 166. In one example, the coupling portion 166 is maintained at a temperature below 300°C, such as below about 280°C, for example about 250°C.

[0033] In another example, the bridge 216 has a thickness equal to that of the coupling portion 166 and / or the distribution portion 164. In this arrangement, other types of thermal chokes (such as staggered channels, fluid circulation channels, etc.) may be used to prevent heat transfer from the distribution portion 164 to the coupling portion 166.

[0034] Figure 3 A panel 336 according to another embodiment is shown. The panel 336 uses a three-layer structure to form the body 300. The electrode layer 302 is coupled to the first surface of the heater layer 304 via a first adhesive layer 306. The ground layer 350 is coupled to the second surface of the heater layer 304 via a second adhesive layer 356. Therefore, the heater layer 304 is disposed between the ground layer 350 and the electrode layer 302. The electrode layer 302, the heater layer 304, and the ground layer 350 are generally formed of a ceramic material, such as aluminum nitride, but other materials are also contemplated. The ground electrode 318 is disposed within the ground layer 350. Similarly, the electrode 308 is disposed in the electrode layer 302. The functions of the ground electrode 318 and the electrode 308 are similar. Figure 2The function of the corresponding ground electrode 218 and electrode 208. A heater 374 is also provided in the heater layer 304 to heat the main body 300. The function of the heater 374 is similar to Figure 2 In one example, the heater 374, the electrode 308, and the ground electrode 318 are coupled to a power source (not shown) outside the process chamber via a facility conduit 390.

[0035] exist Figure 3 In one embodiment, one or more apertures 354 are formed in the ground layer 350 and the heater layer 304. The apertures 354 extend from an outer surface (representatively, the top surface) of the body 300 through the ground layer 350 and into a distribution volume 360. The distribution volume 360 is formed in the heater layer 304 to facilitate distribution of gas flowing through the apertures 354 through the distribution volume 360 and increase the residence time of the gas to interact with the heated body 300. In one example, the distribution volume 360 promotes increased residence time by creating a nonlinear flow path within the body 300. In one example, the nonlinear flow path includes multiple perpendicular flow paths. A plurality of nozzles 362 are formed in the electrode layer 302 and are in fluid communication with the distribution volume 360. In one example, the cross-sectional area of the nozzles 362 is approximately half the cross-sectional area of the apertures 354. Thus, the nozzles 362 restrict the flow of gas through the distribution volume 360 to further increase the residence time of the gas in the distribution volume 360. The apertures 354 are arranged in a honeycomb array such that the center of a first aperture is spaced from the center of an adjacent second aperture by a distance of about 4 mm to about 6 mm. The center-to-center distance between adjacent nozzles 362 is about 3 mm. Here, only two apertures 354, a dispensing volume 360, and a mating nozzle 362 coupled to each dispensing volume 360 are shown. However, other numbers and arrangements may be used.

[0036] A thermal choke 380 is disposed within the electrode layer 302. Similarly, a thermal choke 382 is disposed within the ground layer 350. The thermal chokes 380, 382 are disposed radially outward of the aperture 354. The thermal chokes 380, 382 limit heat transfer from the chokes 380, 382 toward the seals 156, 170. The thermal chokes 380, 382 are, for example, channels for circulating a fluid (such as a gas or liquid) to limit heat transfer therethrough. The thermal chokes 380, 382 are optionally coupled to a cooling system (not shown), such as a heat exchanger, via a facility conduit 390 to cool the circulating fluid. In another example, the thermal chokes 380, 382 are air gaps or a series of interlaced pulses that minimize the cross-section of the respective electrode layer 302 and ground layer 350 to conduct heat adjacent to the thermal chokes 380, 382.

[0037] Figure 4is a panel 436 according to another embodiment. The panel 436 has a body 400 that is similar to Figure 3 4. The main body 400 has a three-layer structure, but includes a bridge 416. The main body 400 includes an electrode layer 402, a heater layer 404, and a ground layer 450 coupled by bonding layers 405, 456. The electrode 408 and the ground electrode 418 are also disposed within the main body 400. The bridge 416 typically extends upward and suspends the panel 436 on the coupling portion 466. The bridge 416 has a reduced thickness, thereby forming a thermal choke that limits heat transfer from the heater 474 toward the coupling portion 466 that contacts the seals 156, 170. In the example shown, the bridge 416 extends vertically from the coupling portion 466 and the main body 400. However, other configurations are also contemplated.

[0038] One or more apertures 454 are formed through the ground layer 450, the heater layer 404 and into the electrode layer 402. At one end of the aperture 454, the aperture 454 is coupled to a plurality of nozzles 462, which are similar to Figure 3 In such an example, the diameter of the nozzle 462 is smaller than the diameter of the aperture 454, such as having a diameter of about half the diameter of the aperture 454. Again, the center-to-center distance between adjacent nozzles 462 and corresponding apertures 454 is about 2 mm to about 6 mm, such as about 5 mm to about 6 mm.

[0039] Figure 5 5 is a panel 536 according to another embodiment. Panel 536 is similar to panel 436, but utilizes a different arrangement of apertures 554. Here, apertures 554 extend from a surface of body 400 at a first end and open into a distribution volume 560 at a second end. Distribution volume 560 is formed in heater layer 504 to facilitate distribution of gas flowing through apertures 554 through distribution volume 560 and increase the residence time of the gas to interact with the heated body 400. A plurality of nozzles 562 are formed in the electrode and are in fluid communication with distribution volume 560. In one example, the cross-sectional area of nozzles 562 is approximately half the cross-sectional area of apertures 554. Thus, nozzles 562 restrict gas flow through distribution volume 560 to further increase the residence time of gas in distribution volume 560. The center-to-center distance between adjacent apertures 554 is approximately 6 mm, and the center-to-center distance between adjacent nozzles 562 is approximately 3 mm.

[0040] In conventional designs, faceplates are generally not heated to the high temperatures described herein (e.g., such as approximately 300° C., 400° C., or 500° C.) because the materials used to construct such conventional faceplates, such as aluminum, lack sufficient strength at these temperatures. However, ceramic materials, such as aluminum nitride, exhibit the desired strength and thermal expansion at the high temperatures described herein. Additionally, seal materials degrade at high temperatures, such as 300° C. or higher. However, by utilizing a faceplate with a bridge and / or thermal choke as described herein, the conduction of heat provided by the heater from the region of the faceplate proximate the distribution portion to the coupling portion with the seals (e.g., seals 156, 170) is reduced. Consequently, the interior portion of the faceplate proximate the process volume can be heated to an elevated temperature to improve deposition on the substrate W being processed, while the exterior portion adjacent to the seals 156, 170 is maintained at a lower temperature to protect the seals 156, 170 from thermal degradation.

[0041] The embodiments disclosed herein advantageously provide a panel that can be heated to high temperatures, such as above 300° C. The ceramic material provides sufficient strength at high temperatures while the seal coupled to the panel is maintained at a temperature that prevents thermal degradation thereof.

[0042] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow.

Claims

1. A panel for processing a substrate, comprising: A subject, wherein the subject comprises: a first layer comprising a first electrode; the second layer, including the heater; a third layer including a ground electrode; and an adhesive layer disposed between the first layer and the second layer and between the second layer and the third layer; a plurality of apertures formed through the body and having a first end and a second end, wherein the first end is located at an exterior surface of the third layer and the second end of each aperture is fluidly coupled to one or more nozzles disposed in the first layer; and A bridge extends perpendicularly from the third layer, the bridge including a thermal choke.

2. The panel according to claim 1, wherein One or more of the first layer, the second layer, and the third layer are formed of a ceramic material.

3. The panel according to claim 2, wherein The ceramic material includes aluminum nitride.

4. The panel according to claim 1, wherein The cross-sectional area of the aperture is approximately twice the cross-sectional area of the nozzle.

5. The panel according to claim 1, wherein The thermal choke includes one or more fluid circulation channels.

6. The panel according to claim 5, wherein The thermal choke limits heat transfer from the heater to an area proximate a seal disposed radially outward of the heater.

7. The panel according to claim 1, wherein The heater includes one or more fluid circulation channels.

8. A panel for processing a substrate, comprising: A subject, wherein the subject comprises: electrode layer; heater layer; ground plane; and an adhesive layer disposed between the electrode layer and the heater layer and between the heater layer and the ground layer; a plurality of apertures formed through the body, the plurality of apertures having a first end and a second end, wherein the first end is located at an exterior surface of the body and the second end of each aperture is fluidly coupled to one or more nozzles disposed in the electrode layer; and A thermal choke includes one or more fluid circulation channels.

9. The panel according to claim 8, wherein Further included is a dispensing volume disposed between the aperture and the nozzle.

10. The panel according to claim 8, wherein Each of the electrode layer, the heater layer, and the ground layer is formed of a ceramic material.

11. The panel according to claim 10, wherein The ceramic material is aluminum nitride.

12. The panel according to claim 8, wherein A heater is disposed in the heater layer, and wherein the thermal choke limits heat transfer from the heater to an area proximate a seal disposed radially outward of the heater.

13. The panel according to claim 8, wherein The cross-sectional area of the aperture is approximately twice the cross-sectional area of the nozzle.

14. The panel according to claim 8, wherein The thermal choke includes a plurality of staggered veins disposed through the electrode layer.

15. A gas distribution apparatus for processing a substrate, comprising: a ceramic body, wherein the body is formed from a first layer, a second layer, and a third layer; a plurality of apertures formed through the ceramic body; a heater disposed in the first layer; an electrode, the electrode being disposed in the second layer; and a bridging portion extending perpendicularly from the third layer, wherein a coupling portion is disposed at an end of the bridging portion opposite the third layer, wherein the bridging portion is a thermal choke comprising one or more fluid circulation channels that restrict heat transfer from the heater to the coupling portion.

16. The gas distribution device according to claim 15, characterized in that The apertures are arranged in a honeycomb array, wherein the center-to-center distance between adjacent apertures is between 2 mm and 6 mm.

17. The gas distribution device according to claim 15, wherein: Each of the plurality of apertures is fluidly coupled to one or more nozzles disposed through the electrode layer, and wherein a cross-sectional area of each aperture is approximately twice a cross-sectional area of each nozzle.

18. The gas distribution device according to claim 15, wherein: The ceramic body is formed of aluminum nitride.

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