A high-voltage drive integrated circuit and an intelligent power module

Abstract

The present application provides a high-voltage drive integrated circuit and an intelligent power module, including: an HVIC chip; an inverter unit, the inverter unit includes at least two sets of inverter modules, each set of inverter modules includes an LIGBT transistor and a Sense-LIGBT transistor, the bases of the LIGBT transistor and the Sense-LIGBT transistor are both connected to the HVIC chip, the collector of the LIGBT transistor is connected to the high-voltage input terminal, the emitter of the LIGBT transistor is connected to the collector of the Sense-LIGBT transistor, the emitter of the Sense-LIGBT transistor includes a main emitter and a secondary emitter, and the main emitter is connected to the ground terminal; a current sampling unit, the current sampling unit includes at least two sampling resistors, one ends of the sampling resistors are respectively connected to the secondary emitter of the Sense-LIGBT transistor and the HVIC chip, and the other ends are connected to the ground terminal.

Description

Technical Field

[0001] This application relates to the field of circuits, and particularly to a high-voltage drive integrated circuit and an intelligent power module. Background Art

[0002] In the prior art, a motor drive circuit generally protects the drive circuit by collecting the total current flowing through the drive circuit and determining whether the total current exceeds a set threshold. Since the total current flowing through the drive circuit is large, a sampling resistor RS in the milliohm range usually needs to be connected to complete the current protection. However, the parasitic inductance of the sampling resistor RS in the milliohm range is large, and spikes will be generated when a large current flows through, which is likely to cause mis-triggering and stop the circuit from working.

[0003] Therefore, there are defects in the prior art and it needs to be improved urgently. Summary of the Invention

[0004] The purpose of the embodiments of this application is to provide a high-voltage drive integrated circuit and an intelligent power module, which solve the problem that the existing drive circuit can only use a sampling resistor in the milliohm range to complete current protection, which is likely to cause mis-triggering and stop the circuit from working, and can reduce the parasitic effect of the drive circuit.

[0005] The embodiments of this application provide a high-voltage drive integrated circuit, including:

[0006] An HVIC chip;

[0007] An inverter unit, the inverter unit includes at least two groups of inverter modules, each group of inverter modules includes an LIGBT transistor and a Sense-LIGBT transistor. Among them, the base of the LIGBT transistor and the base of the Sense-LIGBT transistor are both connected to the HVIC chip, the collector of the LIGBT transistor is connected to the high-voltage input terminal, the emitter of the LIGBT transistor is connected to the collector of the Sense-LIGBT transistor, the emitter of the Sense-LIGBT transistor includes a main emitter and a secondary emitter, and the main emitter is connected to the ground terminal;

[0008] A current sampling unit, the current sampling unit includes at least two sampling resistors, one end of the sampling resistor is respectively connected to the secondary emitter of the Sense-LIGBT transistor and the HVIC chip, and the other end is connected to the ground terminal.

[0009] Preferably, in the high-voltage drive integrated circuit of the embodiments of this application, the Sense-LIGBT transistor is composed of N LIGBT cells, and N is a natural number greater than 2;

[0010] The emitters of M of the LIGBT cells are led out as the secondary emitter of the Sense-LIGBT transistor, where M is a natural number less than N; the emitters of (N - M) of the LIGBT cells are commonly led out as the main emitter of the Sense-LIGBT transistor;

[0011] The collectors of N of the LIGBT cells are commonly led out as the collector of the Sense-LIGBT transistor, and the bases of N of the LIGBT cells are commonly led out as the base of the Sense-LIGBT transistor.

[0012] Preferably, in the high-voltage drive integrated circuit according to the embodiment of the present application, an overcurrent protection circuit and a logic processing circuit are provided in the HVIC chip, and the overcurrent protection circuit is connected to the logic processing circuit;

[0013] At least two ITRIP ports are provided on the HVIC chip, the sampling resistor is connected to the overcurrent protection circuit through the ITRIP port, and the overcurrent protection circuit is used to identify the condition of each-phase current of the high-voltage drive integrated circuit and adjust the overcurrent protection point of each-phase current.

[0014] Preferably, in the high-voltage drive integrated circuit according to the embodiment of the present application, an Iset port is further provided on the HVIC chip, the Iset port is connected to the overcurrent protection circuit, and the overcurrent protection point of each-phase current can be adjusted by pulling down the resistor at the Iset port.

[0015] Preferably, in the high-voltage drive integrated circuit according to the embodiment of the present application, an overtemperature protection circuit is further provided in the HVIC chip, the overtemperature protection circuit is connected to the logic processing circuit, and is used to send a signal to the logic processing circuit to start internal protection when the temperature exceeds a set threshold.

[0016] Preferably, in the high-voltage drive integrated circuit according to the embodiment of the present application, a Tset port is further provided on the HVIC chip, the Tset port is connected to the overtemperature protection circuit, and the threshold of temperature protection can be adjusted by pulling down the resistor at the Tset port; a TSO port is further provided on the HVIC chip, the TSO port is connected to the overtemperature protection circuit and is used to connect an external MCU control chip.

[0017] Preferably, in the high-voltage drive integrated circuit according to the embodiment of the present application, an undervoltage protection circuit and an error reporting circuit are further provided in the HVIC chip, and both the undervoltage protection circuit and the error reporting circuit are connected to the logic processing circuit.

[0018] Preferably, in the high-voltage drive integrated circuit according to the embodiment of the present application, a power supply circuit, an input circuit, an interlock and dead-time circuit, a level-shifting circuit, and a multi-channel drive circuit are further included in the HVIC chip; the input circuit is respectively connected to an input port of the HVIC chip and the power supply circuit, the interlock and dead-time circuit connects the input circuit and the level-shifting circuit, the circuit transfer circuit is connected to an input end of the multi-channel drive circuit, and an output end of each drive circuit is correspondingly connected to one of the LIGBT transistors or one of the Sense-LIGBT transistors.

[0019] Preferably, in the high-voltage drive integrated circuit according to the embodiment of the present application, a fast-recovery diode is connected to both the LIGBT transistor and the Sense-LIGBT transistor.

[0020] The embodiment of the present application provides an intelligent power module, which includes a PCB substrate, a lead frame, and the high-voltage drive integrated circuit disposed on the PCB substrate, and the lead frame is soldered to the PCB substrate through soldering.

[0021] In the high-voltage drive integrated circuit and the intelligent power module provided by the embodiment of the present application, by using the Sense-LIGBT transistor as the lower bridge arm of each inverter module group, a sampling resistor is connected to the secondary emitter of each Sense-LIGBT transistor. By sampling the small current of the drive circuit, the resistance value of the sampling resistor can be increased, the parasitic inductance can be reduced, the generation of spikes can be avoided, and further the mis-triggering that causes the circuit to stop working can be avoided, thereby improving the reliability of the module. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0023] Figure 1 It is a schematic structural diagram of a high-voltage drive integrated circuit in Embodiment 1 of the present application.

[0024] Figure 2 It is a schematic structural diagram of a Sense-LIGBT transistor of a high-voltage drive integrated circuit in Embodiment 1 of the present application.

[0025] Figure 3 It is a schematic structural diagram of an HVIC chip of a high-voltage drive integrated circuit in Embodiment 1 of the present application.

[0026] Figure 4This is a schematic side view of an intelligent power module in Embodiment 2 of the present application. Detailed implementation manners

[0027] Next, the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present application.

[0028] In the description of the present application, it should be noted that the orientation or positional relationship indicated by terms such as "inside", "outside", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this application is usually placed during use. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In addition, terms such as "main", "secondary", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0029] It should also be noted that unless otherwise clearly defined and limited, the terms "set", "connect" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0030] Please also refer to Figure 1 , Figure 1This is the circuit structure diagram of a high-voltage drive integrated circuit in Embodiment 1 of some embodiments of the present application. Embodiment 1 provides a high-voltage drive integrated circuit, which includes: an HVIC chip 10; an inverter unit, and the inverter unit includes at least two sets of inverter modules. In Embodiment 1, the inverter unit includes three sets of inverter modules, namely the first set of inverter modules 21, the second set of inverter modules 22, and the third set of inverter modules 23. Each set of inverter modules includes an LIGBT transistor (lateral insulated gate bipolar transistor, hereinafter referred to as LIGBT transistor) A and a Sense-LIGBT transistor B. In practical applications, the LIGBT transistor A serves as the upper arm of the inverter module, and the Sense-LIGBT transistor B serves as the lower arm of the inverter module. Specifically, the base of the LIGBT transistor A and the base of the Sense-LIGBT transistor B are both connected to the HVIC chip 10. The collector of the LIGBT transistor A is connected to the high-voltage input terminal. The emitter of the LIGBT transistor A is connected to the collector of the Sense-LIGBT transistor B. The emitter of the Sense-LIGBT transistor B includes a main emitter and a secondary emitter, and the main emitter is connected to the ground terminal. The HVIC chip 10 + three sets of inverter modules in Embodiment 1 of the present application constitute a drive circuit with a three-phase full-bridge structure. In practical applications, the high-voltage drive integrated circuit in Embodiment 1 of the present application can output a power of up to 300W and can be used in DC power supply systems below 400V. It can be applied to fields such as robots, industrial control, in-vehicle low-power motors, consumer electronics, and power tools, etc.

[0031] Furthermore, the high-voltage drive integrated circuit in Embodiment 1 of the present application further includes a current sampling unit 30, and the current sampling unit 30 includes at least two sampling resistors. In practical applications, the number of sampling resistors can correspond to the number of sets of inverter modules. For example, in Embodiment 1, there are 3 sampling resistors, namely RS1, RS2, and RS3. One end of each sampling resistor is respectively connected to the secondary emitter of the Sense-LIGBT transistor B and the HVIC chip 10, and the other end is connected to the ground terminal.

[0032] It should be noted that in Figure 1 , point P is the high-voltage input terminal of the high-voltage drive integrated circuit in Embodiment 1 of the present application, point U is the first-phase output terminal of the high-voltage drive integrated circuit in Embodiment 1 of the present application, point V is the second-phase output terminal of the high-voltage drive integrated circuit in Embodiment 1 of the present application, point W is the second-phase output terminal of the high-voltage drive integrated circuit in Embodiment 1 of the present application, and the GND port is the common ground terminal of the high-voltage drive integrated circuit in Embodiment 1 of the present application. In practical applications, the three-phase output terminals of point U, point V, and point W are used to connect to the motor load, and point P is used to connect to the bus input terminal.

[0033] Preferably, please refer to Figure 2 ,Figure 2 This is a schematic diagram of the structure of the Sense-LIGBT transistor B in Embodiment 1 of the present application. In Embodiment 1, the Sense-LIGBT transistor B is composed of N LIGBT cells b, where N is a natural number greater than 2. The emitters of M LIGBT cells b1 are led out as the secondary emitter of the Sense-LIGBT transistor B, where M is a natural number less than N. The emitters of (N - M) LIGBT cells b are commonly led out as the main emitter of the Sense-LIGBT transistor B. In practical applications, the ratio of M to N is the ratio of the sampling current to the bus current. For example, if the Sense-LIGBT transistor B is composed of 1000 LIGBT cells b, and the emitter of 1 LIGBT cell b1 is led out as the secondary emitter of the Sense-LIGBT transistor B, then the sampling current detected by the sampling resistor is 1 / 1000 of the bus current. Therefore, the sampling resistor in Embodiment 1 of the present application samples a small current. Since a small current is sampled, the resistance value of the sampling resistor can be increased. There is no need to connect a sampling resistor with a milliohm-level high power to detect the current to complete overcurrent protection. The parasitic inductance of the sampling resistor can be reduced, and it can be avoided that a large spike may be generated when the bus current flows through the traditional drive circuit, resulting in the inverter unit being turned off after the HVIC chip 10 receives this signal, causing a mis-turn-off situation. Moreover, the resistance value of the sampling resistor in Embodiment 1 of the present application is relatively large. Compared with a sampling resistor with a milliohm level, the accuracy of current detection can be greatly improved. In addition, due to the increase in the resistance value of the sampling resistor, the power loss and heat dissipation burden generated by the sampling resistor can be reduced. Therefore, the sampling resistor of the drive integrated circuit in Embodiment 1 of the present application can be integrated inside the entire power drive module. Since no external current detection circuit is required, the overcurrent protection action time of Embodiment 1 of the present application is faster. The existing overcurrent protection action time requires more than 10 μs, while the overcurrent protection action time of Embodiment 2 of the present application can be shortened to within 5 μs, which is less than the short-circuit withstand capacity of a general IGBT tube, and can better protect the drive integrated circuit and the intelligent power module. Therefore, compared with the prior art, the drive integrated circuit and the intelligent power module in Embodiment 1 of the present application have a simple structure, high reliability, low cost, and high accuracy.

[0034] It should be noted that the collectors of all LIGBT cells b are commonly led out as the collector of the Sense-LIGBT transistor B, and the bases of all LIGBT cells b are commonly led out as the base of the Sense-LIGBT transistor B.

[0035] Preferably, as Figure 3 shown, Figure 3Schematic diagram of the structure of the HVIC chip 10 in Embodiment 1 of the present application. In the high-voltage drive integrated circuit of Embodiment 1 of the present application, an overcurrent protection circuit and a logic processing circuit are provided inside the HVIC chip 10, and the overcurrent protection circuit is connected to the logic processing circuit. And there are at least two ITRIP ports on the HVIC chip 10. In Embodiment 1, there are 3 ITRIP ports on the HVIC chip 10, namely ITRIP 1, ITRIP 2, and ITRIP 3. Each sampling resistor is correspondingly connected to an ITRIP port and then connected to the overcurrent protection circuit inside the HVIC chip 10. The overcurrent protection circuit is used to identify the condition of each-phase current in the high-voltage drive integrated circuit of Embodiment 1 of the present application, adjust the overcurrent protection point of each-phase current, that is, the currents of the three phases of points U, V, and W. Furthermore, when the current exceeds the overcurrent protection point, internal protection is started.

[0036] In practical applications, there is also an Iset port on the HVIC chip 10. The Iset port is connected to the overcurrent protection circuit, and the overcurrent protection point of each-phase current can be adjusted by pulling down the resistor at the Iset port.

[0037] Furthermore, in the high-voltage drive integrated circuit of Embodiment 1 of the present application, an overtemperature protection circuit is also provided inside the HVIC chip 10. The overtemperature protection circuit is connected to the logic processing circuit and is used to send a signal to the logic processing circuit to start internal protection when the temperature exceeds the set threshold.

[0038] In practical applications, there is also a Tset port on the HVIC chip 10. The Tset port is connected to the overtemperature protection circuit, and the threshold of temperature protection can be adjusted by pulling down the resistor at the Tset port. And there is also a TSO port on the HVIC chip 10. The TSO port is connected to the overtemperature protection circuit. The temperature detected by the overtemperature protection circuit can also be fed back to the external MCU control chip in the form of voltage through the TSO port. The MCU control chip reads this voltage signal to obtain the temperature value of the circuit and judges whether it exceeds the set threshold. If it exceeds, a signal is sent to the logic processing circuit to start internal protection.

[0039] In addition, in the high-voltage drive integrated circuit of Embodiment 1 of the present application, an undervoltage protection circuit and an error reporting circuit are also provided inside the HVIC chip 10. Both the undervoltage protection circuit and the error reporting circuit are connected to the logic processing circuit. Among them, the undervoltage protection circuit is used to protect the drive integrated circuit and devices. The error reporting circuit has an FO port led out on the HVIC chip 10 and is connected to the external MCU control chip through the FO port to transmit signals. The logic processing circuit is used to transmit and process signals and is a circuit that realizes digital signal logic operations and operations based on the binary principle.

[0040] Furthermore, the HVIC chip 10 also includes a power supply circuit, an input circuit, an interlock and dead zone circuit, a level shift circuit, and a multi-channel drive circuit. Among them, the input circuit is respectively connected to the input port and the power supply circuit of the HVIC chip 10. Since the inverter module in Embodiment 1 has three groups, there are 6 input ports on the HVIC chip 10, namely three high-side input ports: HIN1, HIN2, HIN3; and three low-side input ports: LIN1, LIN2, LIN3. The power supply circuit is a 5V LDO circuit, which provides a 5V voltage power supply for the internal circuit. The interlock and dead zone circuit is connected to the input circuit and the level shift circuit, and the circuit transfer circuit is connected to the input end of the multi-channel drive circuit. The output end of each drive circuit is correspondingly connected to an LIGBT transistor A or a Sense-LIGBT transistor B. Therefore, the multi-channel drive circuit is a 6-channel drive circuit, including three high-side drive circuits and three low-side drive circuits. The level shift circuit is used to convert the input voltage into the voltage required by the drive circuit. The interlock and dead zone circuit is used to prevent only one of the high-side drive circuit and the low-side drive circuit corresponding to each inverter module from being turned on. It is connected to the logic processing circuit to ensure that only one of an LIGBT transistor A and a Sense-LIGBT transistor B in each group of inverter modules can be turned on, preventing short circuits. And the corresponding output ports led out by the multi-channel drive circuit on the HVIC chip 10 are 6, namely three high-side output ports: HO1, HO2, HO3; and three low-side output ports: LO1, LO2, LO3.

[0041] It should be noted that the drive integrated circuit in Embodiment 1 of the present application receives high-side level signals through the three high-side input ports HIN1, HIN2, HIN3, and receives low-side level signals through the three low-side input ports LIN1, LIN2, LIN3, controls the drive circuit corresponding to each input port, and outputs high-side level signals through the three high-side output ports HO1, HO2, HO3, and outputs low-side level signals through the three low-side output ports LO1, LO2, LO3. The output level signals are used as the control signals for an LIGBT transistor A or a Sense-LIGBT transistor B to determine its on / off, so as to realize the function of high-voltage power drive. Among them, the three high-side input ports HIN1, HIN2, HIN3 and the three low-side input ports LIN1, LIN2, LIN3 of the drive integrated circuit receive input signals of 0V or 5V. Of course, input signals with other voltage amplitudes can be received according to actual needs, and the specific selection is based on the actual devices connected to the circuit.

[0042] Preferably, in the high-voltage drive integrated circuit of Embodiment 1 of the present application, fast-recovery diodes are connected to both the LIGBT transistor A and the Sense-LIGBT transistor B. The positive electrode of the fast-recovery diode is connected to the emitter of the LIGBT transistor A, the negative electrode is connected to the collector of the LIGBT transistor A, the positive electrode of the fast-recovery diode is connected to the main emitter of the Sense-LIGBT transistor B, and the negative electrode of the fast-recovery diode is connected to the collector of the Sense-LIGBT transistor B.

[0043] Please refer to Figure 4 , Figure 4 which is a schematic side view of an intelligent power module in Embodiment 2 of the present application. Embodiment 2 of the present application also provides an intelligent power module, including a PCB substrate 65, a lead frame 67, and the above-mentioned high-voltage drive integrated circuit disposed on the PCB substrate 65. Among them, the lead frame 67 is soldered to the PCB substrate 65 through soldering 66. The power components 61 (i.e., the LIGBT transistor A and the Sense-LIGBT transistor B) in the high-voltage drive integrated circuit are bonded with thick aluminum wires 62, while the bonding of other parts in the module is bonded with thin aluminum wires 63. The module can dissipate heat externally through the lead frame 67 - soldering 66 - PCB substrate 65.

[0044] The high-voltage drive integrated circuit and the intelligent power module provided by the embodiments of the present application, by using the Sense-LIGBT transistor as the lower bridge arm of each inverter module group, and connecting a sampling resistor to the secondary emitter of each Sense-LIGBT transistor, by sampling the small current of the drive circuit, the resistance value of the sampling resistor can be increased, the parasitic inductance can be reduced, the generation of spikes can be avoided, and further the occurrence of mis-triggering to stop the circuit from working can be avoided, thereby improving the reliability of the module. Moreover, the resistance value of the sampling resistor in the embodiments of the present application is relatively large. Compared with the sampling resistor in the milliohm level, the current detection accuracy can be greatly improved. In addition, due to the increase in the resistance value of the sampling resistor, the power loss and heat dissipation burden generated by the sampling resistor can be reduced. Therefore, the sampling resistor of the drive integrated circuit in the embodiments of the present application can be integrated inside the entire power drive module. Since no external current detection circuit is required, the drive overcurrent protection action time of the embodiments of the present application is faster, and the drive integrated circuit and the intelligent power module can be better protected. Therefore, compared with the prior art, the drive integrated circuit and the intelligent power module of the embodiments of the present application have a simple structure, high reliability, and low cost and high accuracy.

[0045] The above are only the embodiments of the present application and are not intended to limit the protection scope of the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A high-voltage drive integrated circuit, characterized in that, it includes: an HVIC chip; an inverter unit, the inverter unit includes at least two groups of inverter modules, each group of inverter modules includes an LIGBT transistor and a Sense-LIGBT transistor, wherein, the base of the LIGBT transistor and the base of the Sense-LIGBT transistor are both connected to the HVIC chip, the collector of the LIGBT transistor is connected to the high-voltage input terminal, the emitter of the LIGBT transistor is connected to the collector of the Sense-LIGBT transistor, the emitter of the Sense-LIGBT transistor includes a main emitter and a secondary emitter, and the main emitter is connected to the ground terminal; a current sampling unit, the current sampling unit includes at least two sampling resistors, one end of the sampling resistor is respectively connected to the secondary emitter of the Sense-LIGBT transistor and the HVIC chip, and the other end is connected to the ground terminal; the Sense-LIGBT transistor is composed of N LIGBT unit cells, and N is a natural number greater than 2; the emitters of M of the LIGBT unit cells are led out as the secondary emitter of the Sense-LIGBT transistor, and M is a natural number less than N; the emitters of (N - M) of the LIGBT unit cells are jointly led out as the main emitter of the Sense-LIGBT transistor; the collectors of the N LIGBT unit cells are jointly led out as the collector of the Sense-LIGBT transistor, and the bases of the N LIGBT unit cells are jointly led out as the base of the Sense-LIGBT transistor; an overcurrent protection circuit and a logic processing circuit are arranged in the HVIC chip, and the overcurrent protection circuit is connected to the logic processing circuit; at least two ITRIP ports are arranged on the HVIC chip, the sampling resistor is connected to the overcurrent protection circuit through the ITRIP port, and the overcurrent protection circuit is used to identify the condition of each phase current of the high-voltage drive integrated circuit and adjust the overcurrent protection point of each phase current.

2. The high-voltage drive integrated circuit according to claim 1, characterized in that, an Iset port is further arranged on the HVIC chip, the Iset port is connected to the overcurrent protection circuit, and the overcurrent protection point of each phase current can be adjusted by the pull-down resistor of the Iset port.

3. The high-voltage drive integrated circuit according to claim 1, characterized in that, an overtemperature protection circuit is further arranged in the HVIC chip, the overtemperature protection circuit is connected to the logic processing circuit, and is used to send a signal to the logic processing circuit to start internal protection when the temperature exceeds the set threshold.

4. The high-voltage drive integrated circuit according to claim 3, characterized in that, The HVIC chip is also provided with a Tset port, which is connected to the overtemperature protection circuit, and the threshold of temperature protection can be adjusted by the pull-down resistor of the Tset port; the HVIC chip is also provided with a TSO port, which is connected to the overtemperature protection circuit and is used to connect an external MCU control chip.

5. The high-voltage drive integrated circuit according to claim 1, characterized in that an undervoltage protection circuit and an error reporting circuit are further provided in the HVIC chip, and both the undervoltage protection circuit and the error reporting circuit are connected to the logic processing circuit.

6. The high-voltage drive integrated circuit according to claim 1, characterized in that the HVIC chip further includes a power supply circuit, an input circuit, an interlock and dead zone circuit, a level shift circuit, and a multi-channel drive circuit; the input circuit is respectively connected to the input port of the HVIC chip and the power supply circuit, the interlock and dead zone circuit connects the input circuit and the level shift circuit, the circuit transfer circuit is connected to the input end of the multi-channel drive circuit, and the output end of each drive circuit is correspondingly connected to one of the LIGBT transistors or one of the Sense-LIGBT transistors.

7. The high-voltage drive integrated circuit according to claim 1, characterized in that fast recovery diodes are connected to both the LIGBT transistor and the Sense-LIGBT transistor.

8. An intelligent power module, characterized in that it includes a PCB substrate, a lead frame, and the high-voltage drive integrated circuit according to any one of claims 1-7 provided on the PCB substrate, and the lead frame is soldered to the PCB substrate.

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