Substrate processing system including a gas delivery system with reduced dead leg

Abstract

A gas delivery system includes a 2-way valve, which includes a first valve disposed between a first port and a second port. The 4-way valve includes a first node connected to the first port and the second port. A bypass path is disposed between a third port and a fourth port. A second node is disposed along the bypass path. The second valve is disposed between the first node and the second node. A manifold block defines a gas flow channel, the gas flow channel being configured to connect the first port of the 4-way valve to a first inlet, configured to connect the second port of the 4-way valve to the first port of the 2-way valve, connect the third port of the 4-way valve to a second inlet, connect the second port of the 2-way valve to a first outlet, and connect the fourth port of the 4-way valve to a second outlet.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Patent Application No. 15 / 956,296 filed on April 18, 2018. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to substrate processing systems, and more particularly to gas delivery systems for substrate processing systems that include reduced dead legs. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors is neither explicitly nor implicitly admitted to be prior art against the present disclosure to the extent that it is described in this background section and in aspects of the description that could not be determined as prior art at the time the application was filed.

[0005] Substrate processing systems for performing deposition and / or etching typically include a processing chamber having a pedestal. A substrate, such as a semiconductor wafer, may be placed on the pedestal during processing. A process gas mixture including one or more precursors may be introduced into the processing chamber to deposit a thin film on the substrate or to etch the substrate. In some substrate processing systems, a radio frequency (RF) plasma may be ignited in the processing chamber and / or an RF bias on the pedestal may be used to activate a chemical reaction.

[0006] Various gas flow paths in the gas delivery system are used to deliver process gases, carrier gases, oxidizing gases, precursor gases and / or purge gases to the processing chamber. The gas flow paths are defined by access tubes, valves, manifolds, and gas flow channels in the valve inlet block. During a portion of the process, the gas may be delivered through the gas flow channel; while during other portions of the process, the gas may not be delivered. In other words, gas, such as vaporized precursor gas, may be temporarily retained in the gas flow channel unless a purge process is performed to clear the gas flow channel. The portion of the gas flow channel that contains the trapped gas is called a dead leg segment. Trapped gas in the dead leg segment may decompose and cause defects on the substrate. Summary of the invention

[0007] A gas delivery system for a substrate processing system includes a 2-way valve, which includes: a first port and a second port; and a first valve, which is arranged between the first port and the second port. The 4-way valve includes: a first port, a second port, a third port and a fourth port. A first node is connected to the first port and the second port. A bypass path is arranged between the third port and the fourth port. A second node is arranged along the bypass path between the third port and the fourth port. The second valve is arranged between the first node and the second node. A manifold block defines a gas flow channel, which is: configured to connect the first port of the 4-way valve to a first inlet; configured to connect the second port of the 4-way valve to the first port of the 2-way valve; configured to connect the third port of the 4-way valve to a second inlet; configured to connect the second port of the 2-way valve to a first outlet; and configured to connect the fourth port of the 4-way valve to a second outlet.

[0008] In other features, the gas delivery system includes: a first gas source; a second gas source; a manifold connected to the first inlet of the manifold. A third valve selectively connects the first gas source to the manifold. A fourth valve selectively connects the second gas source to the manifold.

[0009] In other features, the first gas source supplies a propellant gas, the second gas source supplies a batching gas, and the second outlet is connected to a process chamber. The batching gas source includes an ampoule that supplies a vaporized precursor.

[0010] In other features, the gas delivery system further includes: a controller configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a steering mode. During the steering mode, the first valve is open, the second valve is closed, the third valve is open, and the fourth valve is closed.

[0011] In other features, the controller is further configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a dosing mode after the diverting mode. During the dosing mode, the first valve is closed, the second valve is open, the third valve is open, and the fourth valve is open.

[0012] In other features, during the dosing mode, a dead leg is created between the first node and the inlet of the first valve. The dead leg defines a volume of less than 2.5 ml. There is no dead leg volume during the diverting mode.

[0013] A substrate processing system comprises: a processing chamber including a gas distribution device connected to the first outlet of the manifold of the gas delivery system; a substrate support; and an RF generator. A controller is configured to ignite a plasma between the gas distribution device and the substrate support during a dosing mode.

[0014] A gas delivery system for a substrate processing system includes a first 3-way valve, which includes: a first port, a second port, a third port, a bypass path, and a first node. The first valve is disposed between the second port and the first node. The bypass path and the first node are disposed between the first port and the third port. The gas delivery system includes a second 3-way valve, which includes: a first port, a second port, a third port, a second node, and a bypass path. The second valve is disposed between the first port and the second node. The bypass path and the second node are disposed between the second port and the third port. A manifold block defines a gas flow channel, which is configured to connect the first port of the first 3-way valve to a first inlet; configured to connect the second port of the first 3-way valve to a first outlet; configured to connect the second port of the second 3-way valve to a second inlet; configured to connect the third port of the first 3-way valve to the first port of the second 3-way valve; and configured to connect the third port of the second 3-way valve to a second outlet.

[0015] In other features, the gas delivery system further comprises: a first gas source; a second gas source; a manifold connected to the first port of the first 3-way valve; a third valve selectively connecting the first gas source to the manifold; and a fourth valve selectively connecting the second gas source to the manifold.

[0016] In other features, the first gas source supplies a propulsion gas, the second gas source supplies a batching gas, and the second outlet is connected to a process chamber.

[0017] In other features, the controller is configured to control the first valve, the second valve, the third valve, and the fourth valve to a steering mode. During the steering mode, the first valve is opened, the second valve is closed, the third valve is opened, and the fourth valve is closed.

[0018] In other features, the controller is further configured to control the first valve, the second valve, the third valve, and the fourth valve in a dosing mode after the diverting mode. During the dosing mode, the first valve is closed, the second valve is opened, the third valve is opened, and the fourth valve is opened.

[0019] In other features, a dead leg is created between the first node and the inlet of the second valve. The dead leg is created during the diverting mode. The dosing gas source includes an ampoule that supplies a vaporized precursor. The dead leg defines a volume of less than 2.5 ml.

[0020] A substrate processing system comprises: a processing chamber including a gas distribution device connected to the first outlet of the gas delivery system; a substrate support; and an RF generator. A controller is configured to ignite a plasma between the gas distribution device and the substrate support during dosing.

[0021] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0023] Figure 1 is a functional block diagram of an example of a substrate processing system according to the present disclosure;

[0024] FIG2 is a perspective view of an example of a gas delivery assembly according to the prior art;

[0025] Figure 3 is a schematic diagram of an example of a first valve assembly of a gas delivery system including two 3-way valves; and

[0026] Figure 4 for Figure 3 A schematic diagram of an example of a first valve assembly during a diverting portion of a recipe;

[0027] Figure 5 for Figure 3 A schematic diagram of an example of a first valve assembly during a dosing portion of a recipe;

[0028] Figure 6 To display Figure 3 a perspective view of an example of a valve manifold and a valve inlet of a first valve assembly;

[0029] Figure 7 is a schematic diagram of an example of a second valve assembly for a gas delivery system, the second valve assembly comprising a 4-way valve connected to a 2-way valve: and

[0030] Fig. 8A and 8B for Figure 7 a schematic diagram of an example of a second valve assembly during a diverting portion of a recipe;

[0031] Fig. 9 for Figure 7 a schematic diagram of an example of a second valve assembly of during a dosing portion of a recipe; and

[0032] Fig.10 To display Figure 7 a perspective view of an example of a valve manifold and a valve inlet of a second valve assembly; and

[0033] Fig.11 For Figure 3 and 7 A timing diagram of operating valves in the first and second valve assemblies.

[0034] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0035] Several valve assembly configurations according to the present disclosure significantly reduce defects during substrate processing by reducing the volume of dead-legs when delivering a process gas mixture such as a precursor gas and / or a vaporized precursor. In a first valve assembly, a combination of two 3-way valves is used to reduce the volume of dead-legs. In a second valve assembly, a combination of a 4-way valve and a 2-way valve is used to reduce the volume of dead-legs.

[0036] Reference now Figure 1 , an example of a substrate processing system 100 includes a processing chamber 112 having a reaction volume space. In some examples, a plasma enhanced chemical vapor deposition (CVD) or plasma enhanced atomic layer deposition (ALD) process may be performed, but other etching, deposition or other substrate processes may also be performed.

[0037] A gas distribution device 114, such as a showerhead, can be used to supply the process gas mixture to the process chamber 112. In some examples, the showerhead is a chandelier-type showerhead. A substrate 118, such as a semiconductor wafer, can be disposed on a substrate support 116 during processing. The substrate support 116 can include a pedestal, an electrostatic chuck, a mechanical chuck, or other type of substrate support.

[0038] One or more gas delivery systems 120-1, 120-2, 120-3, ... may include one or more gas sources 122-1, 122-2, ..., and 122-N (collectively referred to as gas sources 122), where N is an integer greater than 1. Valves 124-1, 124-2, ..., and 124-N (collectively referred to as valves 124), mass flow controllers 126-1, 126-2, ..., and 126-N (collectively referred to as mass flow controllers 126), or other flow control devices may be used to controllably supply one or more gases to manifold 130, which supplies a gas mixture to process chamber 112 via valve V46, manifold 131, and valve V164. In some examples, manifold 131 is a heated injector manifold. One or more additional gas delivery systems may be provided to supply gases or gas mixtures at other locations. A diverter path including valve V166 selectively diverts gas to either vacuum or exhaust.

[0039] The controller 140 may be used to monitor process parameters such as temperature, pressure, etc. (using one or more sensors 141) and control process timing. The controller 140 may be used to control process devices such as gas delivery systems 120-1, 120-2, and 120-3, substrate support heater 142, and / or RF plasma generator 146. The controller 140 may also be used to evacuate the process chamber 112 using valve 150 and pump 152.

[0040] The RF plasma generator 146 generates an RF plasma in the processing chamber. The RF plasma generator 146 may be an inductive or capacitive RF plasma generator. In some examples, the RF plasma generator 146 may include an RF power supply 160 and a matching and distribution network 162. Although the RF plasma generator 146 is shown as being connected to the gas distribution device 114 and the substrate support is grounded or floating, the RF plasma generator 146 may be connected to the substrate support 116 and the gas distribution device 114 may be grounded or floating.

[0041] The vaporized precursor may be supplied to the manifold 131 via an ampoule 190, which supplies a vaporized liquid precursor. A carrier gas 180 is supplied via valve 182, MFC 184, and valve 186. Additional valves V213, V205, V214, and V55 control the delivery of carrier gas and / or the delivery of carrier gas and vaporized precursor from ampoule 190. In some examples, ampoule 190 is heated by a heater 194. Ampoule 190 may also include one or more temperature sensors 192 to detect the temperature of the precursor liquid in ampoule 190. Controller 140 may be used to sense the temperature of the precursor liquid and control heater 194 to heat the precursor liquid to a predetermined temperature.

[0042] It will be appreciated that when valve V213 is closed and valves V205 and V214 are open, the carrier gas flows through the ampoule 190 and entrains the vaporized precursor. The mixture of the carrier gas and the vaporized precursor is delivered to the manifold 131 through valve V55 and to the gas distribution device 114 through valve V164. In some examples, the gas delivery system 120-2 delivers the gas mixture to the manifold 196, and valves V44 and V165 control the delivery of the gas to the processing chamber. In some examples, valve V162 provides a secondary purge gas mixture to the stem of the showerhead. In some examples, the gas delivery system 120-3 delivers gas to the manifold 198, and valves V69 and V167 control the delivery of the gas to the vacuum, exhaust, or processing chamber.

[0043] 2, a gas delivery assembly 200 is shown including one or more valve assemblies 220-1, 220-2 ... and 220-4 (collectively referred to as valve assemblies 220) and a valve manifold 228. The valve assembly 220 is configured to control the flow of fluid into and out of the valve manifold 228. In this aspect, the valve manifold 228 includes a body 274 that defines one or more gas passages 276-1, 276-2 ... and 276-N (collectively referred to as gas passages 276); first, second and third inlets 278, 280, 282; and first and second outlets 284, 285.

[0044] The first gas channel 276-1 extends from the first inlet 278 of the valve manifold 228 and the second valve assembly 220-2 and is in fluid communication with the first inlet 278 and the second valve assembly 220-2. The second gas channel 276-2 extends from the first gas channel 276-1 to the first valve assembly 220-1. The third gas channel 276-3 extends from the first valve assembly 220-1 to the first outlet 284 of the valve manifold 228. The fourth gas channel 276-4 extends from the second valve assembly 220-2 to the second outlet 285 of the valve manifold 228.

[0045] The gas delivery assembly 200 operates in at least three modes, such as a divert mode, a supply mode, and a standby mode. The gas delivery assembly 200 can operate in a continuous cycle such that the divert mode precedes the supply mode; the supply mode precedes the standby mode; and the standby mode precedes the divert mode. In the divert mode, stale precursor in the gas channel 276 can be replaced with fresh precursor. In the supply mode, vaporized precursor is supplied to the processing chamber. In the standby mode, vaporized precursor is not supplied and is not diverted.

[0046] When the vaporized precursor is supplied, the first valve assembly 220-1 is closed and the second valve assembly 220-2 is opened. The vaporized precursor gas is supplied from the first inlet 278, passing through the first gas channel 276-1 to the second valve assembly 220-2. The vaporized precursor gas flows through the second valve assembly 220-2 and the fourth gas channel 276-4 to the processing chamber or other parts of the substrate processing system.

[0047] During the standby mode, the first and second valve assemblies 220-1, 220-2 are closed to prevent the flow of vaporized precursor from the first inlet 278. Therefore, during the standby mode, the vaporized precursor gas remains in the first gas channel 276-1. Under some conditions, the retained vaporized precursor in the first gas channel 276-1 may condense into particles. The retained vaporized precursor that subsequently enters the process chamber may cause defects.

[0048] Before supplying the vaporized precursor to the processing chamber in the supply mode, the vaporized precursor is diverted and removed so that the old vaporized precursor in the gas channel 276-1 is replaced by fresh precursor. When the vaporized precursor is diverted, the first valve assembly 220-1 is opened and the second valve assembly 220-2 is closed. When the vaporized precursor gas is supplied from the first inlet 278 through the first gas channel 276-1, the vaporized precursor gas passes through the second gas channel 276-2, the first valve assembly 220-1 and the third gas channel 276-3, and flows out of the valve manifold 228.

[0049] Although the divert mode provides some improvements, not all of the stale vaporized precursor is removed. The gas delivery assembly 200 has a dead-leg space 290 that is located downstream of the second gas channel 276-2 and upstream of the second valve assembly 220-2. Specifically, vaporized precursor that is stagnant in the dead-leg space during the standby mode is not diverted and passes through the first valve assembly 220-1 during the divert mode. Vaporized precursor that is trapped in the dead-leg space 290 during the divert mode still flows from the first and fourth gas channels 276-1, 276-4 into the processing chamber during the supply mode and creates defects in the substrate.

[0050] Reference now Figure 3 , a first valve assembly 300 for a gas delivery system includes a first 3-way valve 302 and a second 3-way valve 304. The first 3-way valve 302 includes a first port for receiving gas from an outlet of the manifold 131. The first port is connected to a bypass path 330 and a first node 310. A second port (or a diverting path 320) of the first 3-way valve 302 is connected to the first node 310 (valve control path 332) through a first valve V166A. A third port is connected to the bypass path 330 and the first node 310.

[0051] The first port of the second 3-way valve 304 is connected to the second node 314 through the second valve V164A via the valve control path 342. The second port of the second 3-way valve 304 supplies gas, such as a propulsion gas, and is connected to the bypass path 340 and the second node 314. The third port is connected to the bypass path 340 and the second node 314. The third port is connected to the process chamber.

[0052] Reference now Figure 4 , showing the first valve assembly 300 in divert mode. Valve V46 supplies gas through manifold 131 (and closes valve V55 to ampoule 190). Gas delivered to the first port of the first 3-way valve 302 is diverted at the first node 310 and passes through the first valve V166A. The second 3-way valve 304 is closed. A dead leg is created between the first node 310 and the inlet of the second valve V164A.

[0053] Reference now Figure 5 , showing the first valve assembly 300 during dosing mode. Valve V46 supplies gas through manifold 131 (and opens valve V55 to ampoule 190). The vaporized precursor gas mixture from ampoule 190 is delivered to the first port of the first 3-way valve 302 and is diverted at the first node 310 without passing through the first valve V166A (closed). Conversely, the vaporized precursor gas mixture is delivered to the first port of the second 3-way valve 304 (the second valve V164A is open) to the second node 314. The mixture of propulsion gas and vaporized precursor is delivered to the process chamber.

[0054] In some examples, the valve assembly 300 defines a very small volume between the first node 310 and the inlet of the second valve V164A. In some examples, the volume is less than 4 ml. In some examples, the volume is less than 3 ml. In other examples, the volume is 2.3 ml. The dosing flow to the processing chamber passes through the first valve V166A and the second valve V164A respectively. The flow to the processing chamber expands from the second valve V164A and enters the inertial flow from the manifold 198. During the diverting step, the portion between the first valve V166A and the second valve V164A is not purged. During the dosing step, the portion between the first valve V166A and the second valve V164A is purged to the processing chamber.

[0055] Reference now Figure 6, a portion of the first valve assembly is shown to include a valve manifold block 610 and a valve inlet 600 for the first 3-way valve 302 and the second 3-way valve 304, respectively. The valve manifold block 610 defines a first channel 620 connecting the first port of the first 3-way valve 302 and the ampoule 190. The valve manifold block 610 defines a second channel 624 connecting the second port of the first 3-way valve 302 to the diversion path 320. The valve manifold block 610 defines a third channel 630 connecting the third port of the first 3-way valve 302 to the first port of the second 3-way valve 304. The valve manifold block 610 defines a fourth channel 636 connecting the manifold 198 to the second port of the second 3-way valve 304. The valve manifold block 610 defines a fifth channel 632 connecting the third port of the second 3-way valve 304 to the process chamber.

[0056] Reference now Figure 7 , the second valve assembly 700 includes a 2-way valve 702 and a 4-way valve 704. The 2-way valve 702 includes a first port that receives gas from the outlet of the manifold 131 through a first node 710 of the 4-way valve 704. The second port of the 2-way valve 702 is connected to a diversion path 720. The first valve V166B is disposed between the first and second ports of the 2-way valve 702.

[0057] The 4-way valve 704 includes a first port connected to the manifold 131 and a first node 710. A second port of the 4-way valve 704 connects the first node 710 to a first port of the 2-way valve 702. The first node 710 is connected to a second valve V164B of the 4-way valve 704. A third port of the 4-way valve 704 receives a gas, such as a propulsion gas, from the manifold 198 and is connected to a second node 714. A fourth port of the 4-way valve 704 connects the second node 714 to a process chamber. The 4-way valve 704 includes a bypass path 730 and a valve control path 732. The second valve V164B selectively allows or blocks flow from the first node 710 to the second node 714.

[0058] like Figure 7 As can be seen in FIG. 1 , the first port of the 4-way valve 704 is connected to the valve control path 732 (at the first node 710) at an angle 760 relative to the path of the valve control path 732. The second node of the 4-way valve 704 is connected at an angle 762 relative to the first path. In some examples, the angle 760 is an acute angle greater than zero. In some examples, the angle 760 is greater than zero and less than 45 degrees. In some examples, the angle 762 is greater than the angle 760. In some examples, the angle 762 is greater than 60 degrees and less than 120 degrees. In some examples, the angle 762 is greater than 70 degrees and less than 100 degrees.

[0059] Reference now Fig. 8A and8B , the second valve assembly 700 is shown during two exemplary steering modes. Fig. 8A , valve V46 supplies gas through manifold 131 (and closes valve V55 leading to ampoule 190). The gas is delivered to the first port of the 4-way valve 704 (which includes a closed second valve V164B). The gas passes through the first node 710 and flows out of the second port of the 4-way valve 704 to the first port of the 2-way valve 702. The first valve V166B of the 2-way valve 702 is opened, so that the gas flows through the 2-way valve 702 to the diverting path 720.

[0060] exist Figure 8B , valve V46 supplies gas to pass through manifold 131 (valves V213 and V55 are open and V205 and V214 are closed). Propellant gas and carrier gas are delivered to the first port of 4-way valve 704 (which includes a closed second valve V164A). Gas passes through the first node 710 and flows out of the second port of the 4-way valve 704 to the first port of the 2-way valve 702. The first valve V166B of the 2-way valve 702 is opened, allowing the gas to flow through the 2-way valve 702 to the diverting path 720.

[0061] exist Fig. 8A and 8B In the embodiment, during the steering mode, the dead leg volume of the second valve assembly 700 is zero. In some examples, the internal passages of the 4-way valve intersect at an angle, compared to conventional valves having straight, or parallel internal passages.

[0062] Reference now Fig. 9 , showing the second valve assembly 700 during the dosing operation. Valve V46 supplies gas to pass through manifold 131 (and opens valve V55 leading to ampoule 190). The vaporized precursor gas mixture delivered to the first port of the 4-way valve 704 does not turn at the first node 710 (because the first valve V166B is closed). On the contrary, the vaporized precursor gas mixture is delivered to the inlet of the 4-way valve 704 (through the opened second valve V164B), and then delivered to the second node 714. The mixture of propulsion gas and vaporized precursor is delivered to the processing chamber. A dead leg is generated during the dosing between the first node 710 and the inlet of the first valve V166B.

[0063] Reference now Fig.10, showing a portion of the second valve assembly including a valve manifold block 1000 and a valve inlet 1004 to the 2-way valve 702 and the 4-way valve 704, respectively. The valve manifold block 1000 defines a first channel 1010 connected to the second port of the 2-way valve 702. The valve manifold block 1000 defines a second channel 1020 connecting the first port of the 2-way valve 702 to the first port of the 4-way valve 704. The valve manifold block 1000 defines a third channel 1050 (receiving a batching gas and a carrier gas), which is connected to the first port of the 4-way valve 704. The valve manifold block 1000 defines a fourth channel 1040 (receiving a propulsion gas), which is connected to the third port of the 4-way valve 704. The valve manifold block 1000 defines a fifth channel 1030 (directing a gas to a process chamber), which is connected to the fourth port of the 4-way valve 704.

[0064] In some examples, the second valve assembly 700 defines a very small volume between the first node 710 and the inlet of the first valve V166B. In some examples, the volume is less than 4 ml. In some examples, the volume is less than 3 ml. In other examples, the volume is 2.3 ml. Unlike the first valve assembly 300, the dosing flow of the second valve assembly 700 to the processing chamber passes through a valve (the second valve V164B). The flow to the processing chamber extends from the central port to the inflation chamber. During the diversion step, the blind leg is cleaned. During the dosing step, the gas is trapped in the blind leg.

[0065] Reference now Fig.11 , which shows a timing diagram for operating the valves using the first valve assembly 300 and the second valve assembly 700, respectively. Although specific values ​​for the switching time periods are shown, other time periods may be used. During the soaking time period, the first gas mixture from the manifold is supplied to the processing chamber using the second valve V164. During the turnaround time period including LCD1 and LCD2, the second valve V164 is closed and the first valve V166 is opened. During LCD1, valve V213 is opened to supply propulsion gas. During LCD2, valve V213 is closed and valves V205, V214 and V55 are opened to supply vaporized precursor. In some examples, the time period for LCD1 is 1.5s and the time period for LCD2 is 1.5s.

[0066] During the first stage of the batching time period, valves V205, V214 and V55 remain open. During the first and second stages of the dosing time period, valve V166 is closed and V164 is opened. The duration of the first stage depends on the gas transport time, which in some examples is 0.05s. In some examples, the duration of the second stage is 0.2s. After dosing, valve V166 is opened and valve V164 is closed.

[0067] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that one or more steps in the method can be performed in different orders (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0068] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0069] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or the type of system, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools and / or load locks connected to or connected to a specific system through an interface.

[0070] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0071] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0072] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0073] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A gas delivery system for a substrate processing system, comprising: 2-way valve, comprising: a first port and a second port; and a first valve disposed between the first port and the second port; 4-way valve, comprising: a first port, a second port, a third port, and a fourth port; a first node connected to the first port and the second port; a bypass path disposed between the third port and the fourth port; a second node disposed along the bypass path between the third port and the fourth port; and a second valve disposed between the first node and the second node; and a manifold block defining a gas flow passage, the gas flow passage: configured to connect the first port of the 4-way valve to a first inlet; configured to connect the second port of the 4-way valve to the first port of the 2-way valve; configured to connect the third port of the 4-way valve to a second inlet; configured to connect the second port of the 2-way valve to the first outlet; and configured to connect the fourth port of the 4-way valve to a second outlet; a first gas source; a second gas source; a manifold connected to the first inlet; a third valve that selectively connects the first gas source to the manifold; and A fourth valve selectively connects the second gas source to the manifold.

2. The gas delivery system of claim 1, wherein the first gas source supplies a propulsion gas, the second gas source supplies a batching gas, and the second outlet is connected to a process chamber.

3. The gas delivery system of claim 2, wherein the dosing gas source comprises an ampoule that supplies a vaporized precursor.

4. The gas delivery system of claim 1, further comprising: A controller is configured to set the states of the first valve, the second valve, the third valve, and the fourth valve in a steering mode, wherein during the steering mode, the first valve is opened, the second valve is closed, the third valve is opened, and the fourth valve is closed.

5. A gas delivery system according to claim 4, wherein the controller is further configured to set the states of the first valve, the second valve, the third valve and the fourth valve in a dosing mode after the diversion mode, wherein during the dosing mode, the first valve is closed, the second valve is opened, the third valve is opened and the fourth valve is opened.

6. The gas delivery system of claim 5, wherein during the dosing mode, a dead leg is created between the first node and an inlet of the first valve.

7. A gas delivery system according to claim 6, wherein the dead leg defines a volume of less than 2.5 ml.

8. The gas delivery system of claim 4, wherein there is no dead-leg volume during the diverting mode.

9. The gas delivery system of claim 1, wherein the second port of the 4-way valve is connected at the first node at an angle between 60 and 120 degrees relative to the first port of the 4-way valve.

10. A substrate processing system comprising: a processing chamber comprising a gas distribution device connected to the first outlet of the gas delivery system of claim 1; a substrate support; RF generator; as well as A controller is configured to ignite a plasma between the gas distribution apparatus and the substrate support during a dosing mode.

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