Apparatus for processing substrates

Abstract

The present invention relates to an apparatus for processing a substrate, comprising: a heat treatment chamber having an internal space; a shell, which is arranged in the internal space, and has a processing space therein; a gas supply line, which supplies a hydrophobic gas into the processing space to hydrophobize the substrate; and a decomposition unit, which decomposes alkaline gas leaked from the processing space to the internal space.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of patent application No. 10-2019-0068197 filed in the Korean Intellectual Property Office on June 10, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concepts described herein relate to an apparatus for treating a substrate, and more particularly, to a substrate treating apparatus for treating a substrate by supplying a gas to the substrate. Background Art

[0004] In the semiconductor manufacturing process, the photolithography process is a process for forming a desired pattern on a wafer. The photolithography process is performed in a rotator device, which is connected to an exposure device, and the rotator device continuously performs a coating process, an exposure process, and a development process. The rotator device sequentially performs a hexamethyldisilazane (hexamethyldisilazane) (hereinafter referred to as HMDS) process, a coating process, a baking process, and a development process. Herein, the HMDS process is a process in which HMDS is dispensed onto a wafer before applying a photoresist (PR) to promote adhesion of the photoresist to the wafer.

[0005] Typically, in the HMDS process, a substrate is supported in a chamber that accommodates the substrate, and hexamethyldisilazane (HMDS) gas is supplied to the substrate. In the process in which hexamethyldisilazane (HMDS) gas is supplied to the substrate to process the substrate, an alkaline gas such as ammonia is generated. When the substrate is loaded into or unloaded from the chamber, the alkaline gas may leak to the outside. Therefore, an exhaust line is connected to the chamber, and the alkaline gas generated in the HMDS process is released through the exhaust line.

[0006] However, the exhaust pressure or exhaust volume provided by the exhaust line connected to the chamber is limited. Therefore, the alkaline gas in the chamber may not be properly released. In addition, when the exhaust pressure or exhaust volume is adjusted to release the alkaline gas, the airflow in the chamber changes. Due to the change in airflow, vortices may be generated in the chamber. Moreover, the alkaline gas is likely to collide with the components in the chamber to generate particles. In addition, due to the change in airflow, the processing of the substrate by the HMDS gas may be performed unevenly. Summary of the invention

[0007] Embodiments of the inventive concept provide a substrate processing apparatus for efficiently processing a substrate.

[0008] Furthermore, embodiments of the inventive concept provide a substrate treating apparatus for efficiently treating an alkaline gas.

[0009] The technical problems to be solved by the inventive concept are not limited to the above problems, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art to which the inventive concept belongs from the following description.

[0010] According to an exemplary embodiment, an apparatus for processing a substrate includes a heat treatment chamber having an internal space; a shell disposed in the internal space, the shell having a processing space therein; a gas supply line that supplies a hydrophobic gas to the processing space to hydrophobize the substrate; and a decomposition unit that decomposes alkaline gas leaked from the processing space to the internal space.

[0011] According to one embodiment, the housing may include: a body having an open top side; and a cover covering the open top side of the body. The body and the cover may be combined with each other to form a processing space, and the cover may be vertically moved to open or close the processing space.

[0012] According to one embodiment, the heat treatment chamber may have an inlet / outlet through which the substrate enters or leaves the heat treatment chamber, and the apparatus may further include a door which opens or closes the inlet / outlet.

[0013] According to one embodiment, the decomposition unit may include a photocatalyst.

[0014] According to one embodiment, the photocatalyst may be provided in the form of a film and may surround the housing.

[0015] According to one embodiment, the photocatalyst may have a stripe shape, and may be disposed on a path along which the alkaline gas leaks from the processing space to the internal space.

[0016] According to an embodiment, the decomposition unit may further include an irradiation member irradiating light to the photocatalyst.

[0017] According to one embodiment, the photocatalyst may contain titanium dioxide (TiO 2 ).

[0018] According to one embodiment, the alkaline gas may be ammonia gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and other objects and features will become apparent from the following description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and wherein:

[0020] Figure 1 is a schematic perspective view showing a substrate processing apparatus according to an embodiment of the inventive concept;

[0021] Figure 2 To show Figure 1 A cross-sectional view of a coating block and a developing block of a substrate processing device;

[0022] Figure 3 To show Figure 1 A plan view of a substrate processing device;

[0023] Figure 4 To show Figure 3 A view of an embodiment of a hand of a transfer unit;

[0024] Figure 5 To show Figure 3 A schematic plan view of one embodiment of a thermal processing chamber;

[0025] Figure 6 To show Figure 5 A front cross-sectional view of a heat treatment chamber;

[0026] Figure 7 is a view showing a state in which a heat treatment chamber decomposes alkaline gas according to an embodiment of the present inventive concept;

[0027] Figure 8 A view showing a portion of a heat treatment chamber according to another embodiment of the present inventive concept;

[0028] Fig. 9 A view showing a portion of a heat treatment chamber according to another embodiment of the present inventive concept;

[0029] Fig.10 is a view showing a portion of a heat treatment chamber according to another embodiment of the present inventive concept; and

[0030] Fig.11 is a view illustrating a portion of a heat treatment chamber according to another embodiment of the present inventive concept. DETAILED DESCRIPTION

[0031] Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings so that the present invention can be easily implemented by those skilled in the art. However, the present invention can be implemented in various forms and is not limited to the embodiments described herein. In addition, when describing the embodiments of the present invention, when the detailed description related to the known functions or configurations may make the subject matter of the present invention unnecessarily obscure, the detailed description is omitted. In addition, throughout the drawings, components that perform similar functions and operations are provided with the same reference numerals.

[0032] The terms "include" and "comprise" in the specification are "open" expressions, which are only used to illustrate the existence of corresponding components, and unless otherwise specifically stated, they do not exclude but may include additional components. In particular, it should be understood that the terms "include", "comprises" and "have", when used in this document, specifically refer to the existence of the features, integers, steps, operations, components and / or parts, but do not exclude the existence or addition of one or more other features, integers, steps, operations, components, parts and / or groups thereof.

[0033] Unless otherwise specified, terms in the singular may include plural forms. Furthermore, in the drawings, the shapes and sizes of components may be exaggerated for clarity of illustration.

[0034] Figure 1 is a schematic perspective view illustrating a substrate processing apparatus according to an embodiment of the inventive concept. Figure 2 To show Figure 1 A cross-sectional view of a coating block and a developing block of a substrate processing device. Figure 3 To show Figure 1 A plan view of a substrate processing apparatus.

[0035] Reference Figures 1 to 3 , the substrate processing device 1 includes an index module 20, a processing module 30 and an interface module 40. According to one embodiment, the index module 20, the processing module 30 and the interface module 40 are sequentially arranged in a row. Hereinafter, the direction in which the index module 20, the processing module 30 and the interface module 40 are arranged is referred to as an X-axis direction 12, the direction perpendicular to the X-axis direction 12 when viewed from above is referred to as a Y-axis direction 14, and the direction perpendicular to both the X-axis direction 12 and the Y-axis direction 14 is referred to as a Z-axis direction 16.

[0036] The index module 20 transfers the substrate W from the carrier 10 containing the substrate W therein to the processing module 30, and places the completely processed substrate W in the carrier 10. The longitudinal direction of the index module 20 is parallel to the Y-axis direction 14. The index module 20 has a loading port 22 and an index frame 24. The loading port 22 is located at the opposite side of the processing module 30 relative to the index frame 24. The carrier 10 containing the substrate W therein is placed on the loading port 22. The loading port 22 may be arranged along the Y-axis direction 14.

[0037] An airtight carrier 10 such as a front opening unified pod (FOUP) may be used as the carrier 10. The carrier 10 may be placed on the load port 22 by a transfer device (not shown) such as an overhead conveyor, an overhead transporter, or an automatic guided vehicle, or by an operator.

[0038] The index robot 2200 is disposed in the index frame 24. A guide rail 2300 is disposed in the index frame 24, and the longitudinal direction of the guide rail 2300 is parallel to the Y-axis direction 14. The index robot 2200 is movable on the guide rail 2300. The index robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 is movable forward and backward, rotatable around an axis facing the Z-axis direction 16, and movable along the Z-axis direction 16.

[0039] The processing module 30 performs a coating process and a developing process on the substrate W. The processing module 30 has a coating block 30a and a developing block 30b. The coating block 30a performs a coating process on the substrate W, and the developing block 30b performs a developing process on the substrate W. The coating blocks 30a are stacked on each other. The developing blocks 30b are stacked on each other. Figure 3 In an embodiment, two coating blocks 30a and two developing blocks 30b are provided. The coating block 30a may be provided below the developing block 30b. According to an embodiment, the two coating blocks 30a may perform the same process and may have the same structure. In addition, the two developing blocks 30b may perform the same process and may have the same structure.

[0040] Reference Figure 3, the coating block 30a has a heat treatment chamber 3200, a transfer chamber 3400, a liquid treatment chamber 3600 and a buffer chamber 3800. The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid treatment chamber 3600 forms a liquid film on the substrate W by distributing liquid onto the substrate W. The liquid film may be a photoresist film or an anti-reflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber 3600 in the coating block 30a.

[0041] The transfer chamber 3400 is disposed so that its longitudinal direction is parallel to the X-axis direction 12. The transfer unit 3420 is disposed in the transfer chamber 3400. The transfer unit 3420 transfers the substrate W between the heat treatment chamber 3200, the liquid treatment chamber 3600, and the buffer chamber 3800. According to one embodiment, the transfer unit 3420 has a hand A on which the substrate W is placed, and the hand A is movable forward and backward, rotatable around an axis facing the Z-axis direction 16, and movable along the Z-axis direction 16. The guide rail 3300 is disposed in the transfer chamber 3400, and the longitudinal direction of the guide rail 3300 is parallel to the X-axis direction 12. The transfer unit 3420 is movable on the guide rail 3300.

[0042] Figure 4 To show Figure 3 A view of an embodiment of a hand of a transfer unit. Figure 4 , hand A has a base 3428 and a supporting protrusion 3429. The base 3428 may have a ring hole shape, and the circumference of the base 3428 is partially curved. The base 3428 has an inner diameter greater than the diameter of the substrate W. The supporting protrusion 3429 extends inward from the base 3428. The supporting protrusion 3429 supports the edge area of ​​the substrate W. According to one embodiment, four supporting protrusions 3429 may be provided at equal intervals.

[0043] Refer again Figure 2 and Figure 3 , a plurality of heat treatment chambers 3200 are provided. The heat treatment chambers 3200 are arranged side by side along the X-axis direction 12. The heat treatment chambers 3200 are located at one side of the transfer chamber 3400.

[0044] Figure 5 To show Figure 3 A schematic plan view of one embodiment of a thermal processing chamber, and Figure 6 To show Figure 5 The heat treatment chamber 3200 has a housing 3210 , a cooling unit 3220 , a heating unit 3230 , a transfer plate 3240 , and a decomposition unit 3250 .

[0045] The heat treatment chamber 3200 has an inner space 3202. The heat treatment chamber 3200 has a substantially rectangular parallelepiped shape. The heat treatment chamber 3200 has an inlet / outlet 3204 in its side wall, and the substrate W enters or leaves the heat treatment chamber 3200 through the inlet / outlet 3204. In addition, a door 3212 can be provided to open or close the inlet / outlet 3204. Alternatively, the inlet / outlet 3204 can be kept in an open state. The cooling unit 3220, the heating unit 3230, the transfer plate 3240 and the decomposition unit 3250 are arranged in the inner space 3202 of the heat treatment chamber 3200. The cooling unit 3220 and the heating unit 3230 are arranged side by side along the Y-axis direction 14.

[0046] The cooling unit 3220 has a cooling plate 3222. When viewed from above, the cooling plate 3222 may have a generally circular shape. A cooling member 3224 is disposed inside the cooling plate 3222. According to one embodiment, the cooling member 3224 may be formed inside the cooling plate 3222 and may serve as a fluid channel through which a cooling fluid flows.

[0047] The heating unit 3230 may include a housing 3232, a heating plate 3234, a heater 3235, a gas supply line 3237, and an exhaust line 3238. The housing 3232 may include a main body 3232a and a cover 3232b. The main body 3232a may have a shape open at the top. The main body 3232a may have a cylindrical shape open at the top. The cover 3232b may cover the top of the main body 3232a. The cover 3232b may have a cylindrical shape open at the bottom. Alternatively, the cover 3232b may have a plate-like shape covering the top of the main body 3232a. The main body 3232a and the cover 3232b may be combined with each other to form a processing space 3233. In addition, the cover 3232b may be connected to a driving member (not shown) that moves the cover 3232b in a vertical direction. Therefore, the cover 3232b can be moved vertically to open or close the processing space 3233. For example, when the substrate W is loaded into or unloaded from the processing space 3233, the cover 3232b may move upward to open the processing space 3233. Also, when the substrate W is processed in the processing space 3233, the cover 3232b may move downward to close the processing space 3233.

[0048] The heating plate 3234 can support the substrate W in the processing space. When viewed from above, the heating plate 3234 has a substantially circular shape. The heating plate 3234 has a diameter larger than the substrate W. The heating plate 3234 is equipped with a heater 3235. The heater 3235 can be a resistive heating element to which an electric current is applied. The heating plate 3235 has a lifting pin 3236, which is vertically movable along the Z-axis direction 16. The lifting pin 3236 receives the substrate W from the conveying unit outside the heating unit 3230 and places the substrate W downward on the heating plate 3234, or lifts the substrate W from the heating plate 3234 and conveys the substrate W to the conveying unit outside the heating unit 3230. According to one embodiment, three lifting pins 3234 may be provided.

[0049] The gas supply line 3237 can supply gas to the substrate W located in the processing space 3233. The gas can be a hydrophobic gas that hydrophobizes the substrate W. The hydrophobic gas can change the property of the substrate W from hydrophilic to hydrophobic. The hydrophobic gas can be supplied before the photoresist (PR) is coated on the substrate W. The hydrophobic gas can include hexamethyldisilazane (HMDS). In addition, the hydrophobic gas can include an inert gas. For example, the inert gas can be nitrogen.

[0050] The exhaust line 3238 can evacuate the processing space 3233. The exhaust line 3238 can reduce the pressure in the processing space 3233. A plurality of exhaust lines 3238 can be provided. A plurality of exhaust lines 3238 can be connected to the bottom of the housing 3232. Further, a plurality of exhaust lines 3238 can be spaced apart from each other at predetermined intervals. In addition, a plurality of exhaust lines 3238 can be provided around the heating plate 3234. A decompression member (not shown) can be connected to the exhaust line 3238. The decompression member can be a pump. However, not limited thereto, the decompression member (not shown) can include various known devices capable of reducing the pressure in the processing space 3233.

[0051] The transfer plate 3240 has a generally circular plate shape and has a diameter corresponding to the diameter of the substrate W. The transfer plate 3240 has notches 3244 formed at the edge thereof. The notches 3244 may have a shape corresponding to the protrusion 3429 formed on the hand A of the transfer unit 3420 described above. In addition, as many notches 3244 as the protrusion 3429 formed on the hand A are formed in positions corresponding to the protrusion 3429. When the vertical position in which the hand A and the transfer plate 3240 are aligned with each other in the vertical direction is changed, the substrate W is transferred between the hand A and the transfer plate 3240. The transfer plate 3240 is mounted on a guide rail 3249 and is moved along the guide rail 3249 by an actuator 3246. A plurality of guide grooves 3242 in a slit shape are formed in the transfer plate 3240. The guide grooves 3242 extend inwardly from the edge of the transfer plate 3240. The longitudinal direction of the guide groove 3242 is parallel to the Y-axis direction 14, and the guide grooves 3242 are positioned to be spaced apart from each other along the x-axis direction 12. When the substrate W is transferred between the transfer plate 3240 and the heating unit 3230, the guide groove 3242 prevents the transfer plate 3240 and the lift pins 3236 from interfering with each other.

[0052] The decomposition unit 3250 may decompose the gas leaked from the processing space 3232 to the internal space 3202. The gas decomposed by the decomposition unit 3250 may be an alkaline gas. The alkaline gas may be ammonia. However, not limited thereto, the decomposition unit 3250 may decompose various gases containing organic compounds. The decomposition unit 3250 may include a photocatalyst 3252 and an irradiation member 3254.

[0053] The photocatalyst 3252 may have a bar shape. The photocatalyst 3252 may be disposed above the heating unit 3230. For example, the photocatalyst 3252 may be disposed above the heating unit 3230 to be adjacent to the inner wall of the heat treatment chamber 3200. For example, an irradiation member 3254 for irradiating light may be disposed on the inner wall of the heat treatment chamber 3200, and the photocatalyst 3252 may be disposed on one surface of the irradiation member 3254.

[0054] The photocatalyst 3252 may receive light irradiated by the irradiation member 3254. The photocatalyst 3252 may include a material that receives light energy and causes catalysis. That is, the photocatalyst 3252 may use light as an energy source to initiate a catalytic reaction (oxidation and reduction reaction), and may generate an active substance through the catalytic reaction. The active substance may be an active oxygen species. In addition, the photocatalyst 3252 may include titanium dioxide (TiO 2). The photocatalyst 3252 may receive light irradiated by the irradiation member 3254, and the holes on the surface of the photocatalyst 3252 may react with the air or moisture in the processing space 3233 to generate active substances, and electrons escape from the surface of the photocatalyst 3252. The active substances may be hydroxyl groups (R).

[0055] Figure 7 FIG. 2 is a view showing a state in which a heat treatment chamber decomposes alkaline gas according to an embodiment of the inventive concept. Figure 7 , the alkaline gas G generated in the process of processing the substrate W by supplying the hydrophobic gas to the substrate W may remain in the processing space 3233 of the shell 3232. When the substrate W is loaded into or unloaded from the processing space 3233 of the shell 3232, the cover 3232b is raised by the driving member. At this time, the alkaline gas G remaining in the processing space 3233 may leak from the processing space 3233 to the internal space 3202. In addition, when the cover 3232b is raised, the irradiation member 3254 may irradiate light to the photocatalyst 3252. As described above, the photocatalyst 3252 may include titanium dioxide (TiO 2 ). Therefore, the photocatalyst 3252 irradiated with light can generate active substances by catalysis. The active substances can be hydroxyl groups (R). The hydroxyl groups R can react with the alkaline gas G leaked from the processing space 3232 to the internal space 3202. In the case where the alkaline gas G is ammonia, the chemical equation is as follows.

[0056] NH 3 +OH·→N 2 +H 2 O

[0057] The alkaline gas G can be decomposed into water and an inert gas, such as nitrogen, by reacting with the active substance. Generally, when the alkaline gas is released through an exhaust line connected to the chamber, the alkaline gas may not be properly released due to the limitation of the exhaust volume or exhaust pressure. In addition, when the exhaust volume or exhaust pressure changes, the airflow in the chamber can change to effectively release the alkaline gas. The change in airflow may generate particles or may prevent the substrate from being uniformly processed. In addition, due to the limitation of the sealing technology of the chamber, it is difficult to completely prevent the alkaline gas from leaking from the chamber. However, according to an embodiment of the inventive concept, the alkaline gas G leaked from the processing space 3233 can be decomposed independently of the exhaust line 3238 of the processing space 3233 provided at the housing 3232. The alkaline gas G decomposes into harmless substances, such as water and nitrogen. In addition, it is not affected by the exhaust volume and exhaust pressure of the exhaust line 3238 and the sealing technology of the housing 3232. Therefore, the influence on the processing of the substrate W in the processing space 3233 of the housing 3232 can be minimized.

[0058] Refer again Figure 4 and Figure 5 , a plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are provided between the index module 20 and the transfer chamber 3400. Hereinafter, these buffer chambers are referred to as front buffers 3802. The front buffers 3802 are stacked on top of each other in the vertical direction. Other buffer chambers 3800 are provided between the transfer chamber 3400 and the interface module 40. These buffer chambers are referred to as rear buffers 3804. The rear buffers 3804 are stacked on top of each other in the vertical direction. The front buffer 3802 and the rear buffer 3804 temporarily store a plurality of substrates W. The substrates W stored in the front buffer 3802 are loaded or unloaded by the index robot 2200 and the transfer unit 3420. The substrates W stored in the rear buffer 3804 are loaded or unloaded by the transfer unit 3420 and the first robot 4602.

[0059] The developing block 30b has a heat treatment chamber 3200, a transfer chamber 3400, and a liquid treatment chamber 3600. The heat treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the developing block 30b are arranged in a structure similar to the heat treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the coating block 30a. Therefore, the description thereof will be omitted. However, the liquid treatment chamber 3600 in the developing block 30b is arranged as the developing chamber 3600, and all the developing chambers 3600 uniformly distribute the developing solution to perform the developing process on the substrate W.

[0060] The interface module 40 connects the process module 30 with the external exposure device 50. The interface module 40 has an interface frame 4100, an additional process chamber 4200, an interface buffer 4400, and a transfer member 4600.

[0061] The interface frame 4100 may have a fan filter unit at its top, which forms a downward airflow in the interface frame 4100. The additional process chamber 4200, the interface buffer 4400 and the transfer member 4600 are arranged in the interface frame 4100. Before the substrate W completely processed in the coating block 30a is transferred to the exposure device 50, the additional process chamber 4200 can perform a predetermined additional process on the substrate W. Selectively, before the substrate W completely processed in the exposure device 50 is transferred to the developing block 30b, the additional process chamber 4200 can perform a predetermined additional process on the substrate W. According to an embodiment, the additional process can be an edge exposure process that exposes the edge area of ​​the substrate W to light, a top side cleaning process that cleans the top side of the substrate W, or a rear side cleaning process that cleans the rear side of the substrate W. A plurality of additional process chambers 4200 can be provided. The additional process chambers 4200 can be stacked on each other. The additional process chambers 4200 can all perform the same process. Optionally, some of the additional process chambers 4200 may perform different processes.

[0062] The interface buffer 4400 provides a space in which the substrate W transferred between the coating block 30a, the additional process chamber 4200, the exposure device 50, and the developing block 30b temporarily stays. A plurality of interface buffers 4400 may be provided. The interface buffers 4400 may be stacked one on top of another.

[0063] According to one embodiment, the additional process chamber 4200 may be disposed on one side of an extension line facing the longitudinal direction of the transfer chamber 3400 , and the interface buffer 4400 may be disposed on an opposite side of the extension line.

[0064] The transfer member 4600 transfers the substrate W between the coating block 30a, the additional process chamber 4200, the exposure device 50 and the development block 30b. The transfer chamber 4600 can be implemented with one or more robots. According to one embodiment, the transfer member 4600 has a first robot 4602 and a second robot 4606. The first robot 4602 can transfer the substrate W between the coating block 30a, the additional process chamber 4200 and the interface buffer 4400. The interface robot 4606 can transfer the substrate W between the interface buffer 4400 and the exposure device 50. The second robot 4606 can transfer the substrate W between the interface buffer 4400 and the development block 30b.

[0065] Each of the first robot 4602 and the second robot 4606 includes a hand on which the substrate W is placed, and the hand is movable forward and backward, rotatable around an axis parallel to the Z-axis direction 16 , and movable along the Z-axis direction 16 .

[0066] In the above-described embodiment, the photocatalyst 3252 is provided on the housing 3232. However, the present invention is not limited thereto. Figure 8 As shown, the photocatalyst 3252 may be provided in a film form. The photocatalyst 3252 provided in a film form may surround the housing 3232. In this case, the alkaline gas G leaked from the processing space 3233 may be decomposed by immediately reacting with the active substance generated by the photocatalyst 3252.

[0067] In the above-described embodiment, the photocatalyst 3252 is provided on the housing 3232. However, the present invention is not limited thereto. Fig. 9 As shown, the photocatalyst 3252 can be arranged on the path along which the alkaline gas G leaks from the processing space 3233 to the internal space 3202. For example, when the cover 3232b is lifted from the main body 3232a, the photocatalyst 3252 can be arranged on the outside of the area where the main body 3232a and the cover 3232b are spaced apart from each other. In this case, when viewed from above, the photocatalyst 3252 can have an annular shape. The annular photocatalyst 3252 can have a larger radius than the shell 3232. In addition, the annular photocatalyst 3252 can be coupled to a support member not shown. The annular photocatalyst 3252 can be arranged to be detachable from the support member.

[0068] Alternatively, if Fig.10 As shown, the photocatalyst 3252 may have a cylindrical shape that is open at the top and bottom. The photocatalyst 3252 in a cylindrical shape that is open at the top and bottom may have a larger radius than the housing 3232. Fig.10 The embodiment shown in Fig. 9 In the embodiment shown in , the photocatalyst 3252 is provided on the path along which the alkaline gas G leaks from the processing space 3233 to the internal space 3202. Therefore, the efficiency of decomposing the alkaline gas G can be improved.

[0069] In another case, if Fig.11 As shown, the photocatalyst 3252 may be disposed adjacent to the inlet / outlet 3204. The photocatalyst 3252 may be disposed on the inner wall of the heat treatment chamber 3200, and may have a shape surrounding the inlet / outlet 3204. Since the inlet / outlet 3204 is an opening through which the substrate W enters or leaves the heat treatment chamber 3200, a gas flow toward the inlet / outlet 3204 is generated. Therefore, the alkaline gas G leaked from the processing space 3233 to the internal space 3202 easily flows toward the inlet / outlet 3204. Therefore, in the case where the photocatalyst 3252 is disposed adjacent to the inlet / outlet 3204, the efficiency of decomposing the alkaline gas G may be improved.

[0070] In the above-described embodiment, it has been exemplified that a single photocatalyst 3252 is provided. However, the inventive concept is not limited thereto. For example, the shapes and arrangements of the photocatalysts 3252 described in the above embodiments may be used alone or in combination.

[0071] In the above-described embodiment, it has been exemplified that the irradiation member 3254 is provided separately from the photocatalyst 3252 . However, the present inventive concept is not limited thereto. For example, the irradiation member 3254 may be omitted. Alternatively, the irradiation member 3254 may be integrated with the photocatalyst 3252 .

[0072] In the above-mentioned embodiment, it has been exemplified that the process gas is HMDS gas, and the substrate treatment process is a process of hydrophobizing the substrate W before the substrate W is coated with a photoresist. However, the substrate treatment process may be a process different from the aforementioned process. For example, the substrate treatment process may be a deposition process of forming a thin film on the substrate W or an etching process of removing a film on the substrate W.

[0073] As described above, according to the embodiments of the inventive concept, a substrate processing apparatus may effectively process a substrate.

[0074] In addition, the substrate processing apparatus can effectively process alkaline gas.

[0075] Effects of the inventive concept are not limited to the above-mentioned effects, and any other effects not mentioned herein may be clearly understood by those skilled in the art to which the inventive concept pertains from the present specification and the accompanying drawings.

[0076] The above description illustrates the inventive concept. In addition, the above content describes the exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, variations and environments. That is, without departing from the scope of the inventive concept disclosed in this specification, the equivalent scope of the written disclosure, and / or the technology or knowledge scope of those skilled in the art, the inventive concept can be changed or modified. The written embodiment describes the best state of the technical spirit of the inventive concept, and various changes required for the specific application and purpose of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiment state. In addition, it should be understood that the attached claims include other embodiments.

[0077] Although the present invention has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention. Therefore, it should be understood that the above embodiments are not restrictive, but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a heat treatment chamber, the heat treatment chamber having an inner space; a housing disposed in the interior space, the housing having a processing space therein; a gas supply line configured to supply a hydrophobic gas into the processing space to hydrophobize the substrate; and a decomposition unit configured to decompose alkaline gas leaked from the processing space to the internal space; The decomposition unit includes a photocatalyst and an irradiation member, the irradiation member is disposed on an inner wall of the heat treatment chamber, and the photocatalyst is disposed on one surface of the irradiation member.

2. The device according to claim 1, wherein: The housing comprises: a body having an open top side; and a cover configured to cover the open top side of the body, wherein the body and the cover are combined with each other to form the processing space, and Wherein, the cover moves vertically to open or close the processing space.

3. The device according to claim 2, wherein: The thermal processing chamber has an inlet / outlet through which the substrate enters or leaves the thermal processing chamber, and Wherein, the device further comprises a door, and the door is configured to open or close the entrance / exit.

4. The device according to claim 1, wherein: The photocatalyst is provided in a film form and is configured to surround the housing.

5. The device according to claim 1, wherein: The photocatalyst has a stripe shape.

6. The device according to claim 5, wherein: The irradiation member is configured to irradiate light to the photocatalyst.

7. The device according to claim 1, wherein: The photocatalyst is disposed on a path along which the alkaline gas leaks from the processing space to the inner space.

8. The device according to claim 7, wherein: The photocatalyst has a ring shape.

9. The device according to claim 8, wherein: The photocatalyst is coupled to a support member.

10. The device according to claim 9, wherein: The photocatalyst is provided to be detachable from the supporting member.

11. The device according to claim 7, wherein: The photocatalyst has a cylindrical shape opened at the top and bottom.

12. The device according to claim 11, wherein The photocatalyst has a larger radius than the housing.

13. The device according to claim 1, wherein: The photocatalyst is arranged on the inner wall of the heat treatment chamber.

14. The device according to claim 13, wherein: The photocatalyst has a shape surrounding the inlet / outlet of the heat treatment chamber.

15. The device according to claim 1, wherein: The photocatalyst comprises titanium dioxide TiO2.

16. The device according to any one of claims 1 to 3, wherein: The alkaline gas is ammonia.

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