Device for purging a slit valve opening in a semiconductor processing chamber

Abstract

The present invention relates to an apparatus for purging a slit valve opening of a semiconductor processing chamber. A semiconductor processing chamber is provided, which may include: a wafer transfer channel extending through a chamber wall and having an inner channel surface defining an opening, an insert including an insert inner surface defining an insert opening, and a gas inlet. A first recessed surface of the wafer transfer channel at least partially extending around the inner channel surface and offset outwardly from the inner channel surface, a first insert outer surface at least partially extending around the insert inner surface and offset outwardly from the insert inner surface, and a first wall surface extending between the inner channel surface and the first recessed surface at least partially defining a gas distribution channel fluidly connected to the gas inlet, the first recessed surface being separated from the first insert outer surface by a first distance, and an insert front surface facing the first wall surface and being separated from the first wall surface by a first gap distance.

Description

[0001] The present application is a divisional application of the application with application number 201710112144.X, application date February 28, 2017, and invention name “Device for purging the slit valve opening of a semiconductor processing chamber”. Technical Field

[0002] The present invention relates to the field of semiconductor processing, and more particularly to an apparatus for purging a slit valve opening of a semiconductor processing chamber. Background Art

[0003] Some semiconductor processing tools move wafers into and out of a processing chamber via a passage that extends from an area outside the processing chamber through a processing chamber wall to the interior of the processing chamber. Such a passage may have a gate valve (i.e., a slit valve) at the end of the passage that may be opened to allow the wafer to pass through the passage and may close and / or seal (e.g., pressure or fluid seal) the passage so that the interior of the processing chamber is isolated from an area outside the processing chamber. Summary of the invention

[0004] In one embodiment, a semiconductor processing chamber may be provided. The semiconductor processing chamber may include: an internal volume for semiconductor processing, a chamber wall at least partially defining an outer side of the semiconductor processing chamber and the internal volume, and a gas inlet. The semiconductor processing chamber may also include a wafer transfer channel extending from the outer side of the semiconductor processing chamber through the chamber wall to the internal volume along a first axis and having: an inner channel surface defining an opening having a first substantially rectangular cross-section perpendicular to the first axis; a first recessed surface extending at least partially around the inner channel surface and offset outwardly from the inner channel surface when viewed along the first axis; and a first wall surface extending between the inner channel surface and the first recessed surface. The semiconductor processing chamber may also include an insert, the insert including: an insert inner surface defining an insert opening having a second substantially rectangular cross-sectional area perpendicular to the first axis; a first insert outer surface at least partially around the insert inner surface and offset outwardly from the insert inner surface when viewed along the first axis; and an insert front surface facing the first wall surface. The first recessed surface, the first insert outer surface, and the first wall surface may at least partially define a gas distribution channel, the gas distribution channel may be fluidly connected to the gas inlet, the first recessed surface may be separated from the first insert outer surface by a first distance, and the insert front surface may be separated from the first wall surface by a first gap distance.

[0005] In one such embodiment, the insert may further include a second insert outer surface extending at least partially around the first insert outer surface and offset outwardly from the first insert outer surface when viewed along the first axis.

[0006] In further such embodiments, the second insert outer surface may be proximate to the first recessed surface.

[0007] In another such embodiment, the insert may further include a second wall surface extending between the second insert outer surface and the first insert outer surface, and the gas distribution channel may be at least partially defined by the second wall surface.

[0008] In some additional such embodiments, the wafer conveying channel may further include a second recessed surface, which, when viewed along the first axis, extends around the inner channel surface and is offset inward from the first recessed surface. The wafer conveying channel may further include a third wall surface extending between the second recessed surface and the first recessed surface, and the gas distribution channel may be at least partially defined by the third wall surface.

[0009] In one such embodiment, the wafer transfer channel may further include a second recessed surface extending around the inner channel surface and offset inwardly from the first recessed surface when viewed along the first axis.

[0010] In further such embodiments, the first insert outer surface may be proximate to the second recessed surface.

[0011] In additional such embodiments, the wafer transfer passage may further include a third wall surface extending between the second recessed surface and the first recessed surface, and the gas distribution passage may be at least partially defined by the third wall surface.

[0012] In one such embodiment, the gas distribution channel may follow a first path extending at least partially around the insert interior surface and may have a third cross-sectional area perpendicular to the first path.

[0013] In further such embodiments, the first path may extend completely around the insert interior surface.

[0014] In further such embodiments, the third cross-sectional area may remain substantially constant along the first path.

[0015] In further such embodiments, the third cross-sectional area may vary along the first path.

[0016] In further such embodiments, the first path may have a first point and a second point such that the first point is closer to the gas inlet than the second point along the first path, and the third cross-sectional area may be larger at the second point than at the first point.

[0017] In some embodiments, the insert may be made from two or more components that, when assembled, in aggregate form the insert inner surface, the first insert outer surface, and the insert front surface.

[0018] In some embodiments, the first recessed surface may extend completely around the inner channel surface.

[0019] In some embodiments, the first insert outer surface may extend completely around the insert inner surface.

[0020] In one such embodiment, the insert may include one or more spacers contacting the first wall surface to position the insert front surface away from the first wall surface by the first gap distance.

[0021] In further such embodiments, the one or more spacers may extend from the insert front surface.

[0022] In some embodiments, the insert front surface may be substantially parallel to the first wall surface.

[0023] In some embodiments, the insert front surface may be angled relative to the first wall surface.

[0024] In some embodiments, the first cross-sectional area can be substantially equal in size and shape to the second cross-sectional area.

[0025] In some embodiments, the inner channel surface may be aligned with the insert inner surface.

[0026] In one embodiment, a kit may be provided. The kit may include: a) a semiconductor processing chamber, comprising: an internal volume for semiconductor processing; a chamber wall at least partially defining an outer side of the semiconductor processing chamber and the internal volume; a wafer transfer channel extending from the outer side of the semiconductor processing chamber through the chamber wall to the internal volume along a first axis and having: an inner channel surface defining an opening having a first substantially rectangular cross-sectional area perpendicular to the first axis, a first recessed surface extending at least partially around the inner channel surface and offset outwardly from the inner channel surface when viewed along the first axis, and a first wall surface extending between the inner channel surface and the first recessed surface; and a gas inlet fluidly connected to the first recessed surface. The kit may also include: b) an insert, the insert comprising: an insert inner surface defining an insert opening having a second substantially rectangular cross-sectional area perpendicular to the first axis; a first insert outer surface extending at least partially around the insert inner surface and offset outwardly from the insert inner surface when viewed along the first axis; and an insert front surface. At least a portion of the insert is configured to be inserted into the wafer transfer passage, and the chamber wall is configured to allow at least a portion of the insert to be inserted into the wafer transfer passage. When at least a portion of the insert is installed in the wafer transfer passage, the first recessed surface, the first insert outer surface, and the first wall surface at least partially define a gas distribution passage, the gas distribution passage is fluidly connected to the gas inlet, the first recessed surface is separated from the first insert outer surface by a first distance, and the insert front surface is separated from the first wall surface by a first gap distance.

[0027] Specifically, some aspects of the present invention can be described as follows:

[0028] 1. A semiconductor processing chamber, comprising:

[0029] internal volumes used for semiconductor processing;

[0030] a chamber wall at least partially defining an exterior side of the semiconductor processing chamber and the interior volume;

[0031] a wafer transfer passage extending along a first axis from the outside of the semiconductor processing chamber through the chamber wall to the interior volume and having:

[0032] an inner channel surface defining an opening having a first substantially rectangular cross-sectional area perpendicular to the first axis,

[0033] a first recessed surface extending at least partially around the inner passage surface and offset outwardly from the inner passage surface when viewed along the first axis, and

[0034] a first wall surface extending between the inner channel surface and the first recessed surface;

[0035] An insert comprising:

[0036] an insert inner surface defining an insert opening having a second substantially rectangular cross-sectional area perpendicular to the first axis,

[0037] a first insert outer surface extending at least partially around the insert inner surface and offset outwardly from the insert inner surface when viewed along the first axis,

[0038] an insert front surface facing the first wall surface; and

[0039] Gas inlet,

[0040] in:

[0041] The first recessed surface, the first insert outer surface, and the first wall surface at least partially define a gas distribution channel,

[0042] The gas distribution channel is fluidly connected to the gas inlet,

[0043] The first recessed surface is separated from the first insert outer surface by a first distance,

[0044] The insert front surface is separated from the first wall surface by a first gap distance.

[0045] 2. A semiconductor processing chamber according to clause 1, wherein the insert further comprises a second insert outer surface, which extends at least partially around the first insert outer surface and is offset outwardly from the first insert outer surface when viewed along the first axis.

[0046] 3. The semiconductor processing chamber of clause 2, wherein the second insert outer surface is proximate to the first recessed surface.

[0047] 4. The semiconductor processing chamber of clause 2, wherein:

[0048] The insert also includes a second wall surface extending between the second insert outer surface and the first insert outer surface, and

[0049] The gas distribution channel is further defined at least in part by the second wall surface.

[0050] 5. The semiconductor processing chamber of clause 4, wherein:

[0051] The wafer transfer channel also includes a second recessed surface extending around the inner channel surface and offset inwardly from the first recessed surface when viewed along the first axis,

[0052] The wafer transfer passage further includes a third wall surface extending between the second recessed surface and the first recessed surface, and

[0053] The gas distribution channel is further defined at least in part by the third wall surface.

[0054] 6. A semiconductor processing chamber according to clause 1, wherein the wafer transfer channel further comprises a second recessed surface, which extends around the inner channel surface and is offset inwardly from the first recessed surface when viewed along the first axis.

[0055] 7. The semiconductor processing chamber of clause 6, wherein the first insert outer surface is proximate to the second recessed surface.

[0056] 8. The semiconductor processing chamber of clause 6, wherein:

[0057] The wafer transfer passage further includes a third wall surface extending between the second recessed surface and the first recessed surface, and

[0058] The gas distribution channel is further defined at least in part by the third wall surface.

[0059] 9. The semiconductor processing chamber of any of clauses 1-8, wherein the gas distribution channel follows a first path extending at least partially around the insert inner surface and has a third cross-sectional area perpendicular to the first path.

[0060] 10. The semiconductor processing chamber of clause 9, wherein the first path extends completely around the insert inner surface.

[0061] 11. The semiconductor processing chamber of clause 9, wherein the third cross-sectional area remains substantially constant along the first path or varies along the first path.

[0062] 12. The semiconductor processing chamber of clause 9, wherein:

[0063] The first path has a first point and a second point, wherein the first point is closer to the gas inlet than the second point along the first path, and the third cross-sectional area is larger at the second point than at the first point.

[0064] 13. A semiconductor processing chamber according to any of clauses 1-8, wherein the insert is made of two or more parts, which, when assembled, collectively form the insert inner surface, the first insert outer surface and the insert front surface.

[0065] 14. The semiconductor processing chamber of any of clauses 1-8, wherein the first recessed surface extends completely around the inner channel surface.

[0066] 15. The semiconductor processing chamber of any of clauses 1-8, wherein the first insert outer surface extends completely around the insert inner surface.

[0067] 16. The semiconductor processing chamber of any of clauses 1-8, wherein the insert comprises one or more spacers contacting the first wall surface such that the insert front surface is away from the first wall surface by the first gap distance.

[0068] 17. The semiconductor processing chamber of clause 16, wherein the one or more spacers extend from the insert front surface.

[0069] 18. The semiconductor processing chamber of any of clauses 1-8, wherein the insert front surface is one of: substantially parallel to the first wall surface or at an oblique angle relative to the first wall surface.

[0070] 19. The semiconductor processing chamber of any of clauses 1-8, wherein the first cross-sectional area is substantially equal in size and shape to the second cross-sectional area.

[0071] 20. The semiconductor processing chamber of any of clauses 1-8, wherein the inner channel surface is aligned with the insert inner surface.

[0072] 21. A kit comprising:

[0073] a) A semiconductor processing chamber comprising:

[0074] Internal volumes used for semiconductor processing,

[0075] a chamber wall at least partially defining an exterior side of the semiconductor processing chamber and the interior volume,

[0076] a wafer transfer passage extending along a first axis from an outside of the semiconductor processing chamber through the chamber wall to the interior volume and having:

[0077] an inner channel surface defining an opening having a first substantially rectangular cross-sectional area perpendicular to the first axis,

[0078] a first recessed surface extending at least partially around the inner passage surface and offset outwardly from the inner passage surface when viewed along the first axis, and

[0079] a first wall surface extending between the inner passage surface and the first recessed surface;

[0080] a gas inlet fluidly connected to the first recessed surface; and

[0081] b) an insert comprising:

[0082] an insert inner surface defining an insert opening having a second substantially rectangular cross-sectional area perpendicular to the first axis

[0083] a first insert outer surface extending at least partially around the insert inner surface and offset outwardly from the insert inner surface when viewed along the first axis, and

[0084] an insert front surface;

[0085] in:

[0086] At least a portion of the insert is configured to be inserted into the wafer transfer channel,

[0087] The chamber wall is configured to allow at least a portion of the insert to be inserted into the wafer transfer passage, and

[0088] When at least a portion of the insert is installed in the wafer transfer channel:

[0089] The first recessed surface, the first insert outer surface, and the first wall surface at least partially define a gas distribution channel,

[0090] The gas distribution channel is fluidly connected to the gas inlet,

[0091] The first recessed surface is separated from the first insert outer surface by a first distance, and

[0092] The insert front surface is separated from the first wall surface by a first gap distance. BRIEF DESCRIPTION OF THE DRAWINGS

[0093] Figure 1 An isometric view of an exemplary processing chamber is depicted.

[0094] Figures 2 to 5 Shown through Figure 1 FIG. 1 is a view of a wafer transfer channel of an exemplary processing chamber.

[0095] Figure 6 Shows Figure 1 A top view of a processing chamber and a portion of a processing chamber.

[0096] Figure 7 Depicted Figure 6 A plan front view of a portion of a processing chamber in FIG.

[0097] Figure 8 Depicted Figure 7 An isometric view of a portion of a processing chamber.

[0098] Fig. 9 Shows Figure 7 An off-angle view of the back side of a portion of a processing chamber.

[0099] Fig.10 Depicted Figure 7 An elevated view of the back of a portion of a processing chamber in FIG.

[0100] Fig.11 Depicted Figure 7 Different off-angle views of a portion of a process chamber in FIG.

[0101] Fig.12 An isometric view of an exemplary insert is depicted.

[0102] Fig.13 Depicted Fig.12 Inserts.

[0103] Fig.14 Shows Fig.13 Front view of the insert shown.

[0104] Fig.15 The insert is shown inserted into Figure 6 Two off-angle views of a portion of the chamber wall in the wafer transfer channel.

[0105] Fig.16 Depicted Fig.15 A cross-sectional off-angle view of a portion of a process chamber wall is shown.

[0106] Fig.17 Depicted Fig.16 A cross-sectional side view of a portion of a process chamber wall.

[0107] Fig.18 An isometric view of a volumetric representation of the gas distribution channels is depicted.

[0108] Fig.19 A side view of a gas distribution channel following a first path extending partially around an inner surface of an insert is shown.

[0109] Fig. 20 Depicted Fig.18A cross-sectional off-angle view of a volumetric representation of the gas distribution channel.

[0110] Fig.21 Shows Fig.12 Isometric view of the insert.

[0111] Fig. 22 Describes something like Fig.17 A partial cross-sectional side view of an exemplary portion of a chamber wall and insert is shown.

[0112] Fig.23 Describes something like Fig. 22 A partial cross-sectional side view of a portion of a chamber wall is shown.

[0113] Fig.24 Shows Fig.17 An enlarged cross-sectional side view of a portion of the chamber wall and insert is shown.

[0114] Fig.25 Shows something like Fig.17 An enlarged cross-sectional side view of a portion of the chamber wall and insert is shown.

[0115] Fig.26 Shows something like Fig.17 An enlarged cross-sectional view of a portion of the chamber wall and insert is shown.

[0116] Fig. 27 Shows Fig.10 A top view of the back side of a portion of the processing chamber in FIG. Fig.13 and Fig.14 Plane front view of the insert in .

[0117] Fig.28 Describes something like Fig.18 Isometric view of the volume representation of the gas distribution channels.

[0118] Fig.29 Shows Fig.28 Off-angle cross-sectional view of the volume representation of the gas distribution channel. DETAILED DESCRIPTION

[0119] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the concepts presented. The concepts presented may be practiced without some or all of these specific details. In other cases, well-known processing operations are not described in detail so as not to unnecessarily obscure the concepts described. Although some concepts will be described in conjunction with specific embodiments, it will be understood that these embodiments are not intended to be limiting.

[0120] Many concepts and implementations are described and illustrated herein. Although certain features, attributes and advantages of the implementations discussed herein have been described and illustrated, it should be understood that many other implementations of the present disclosure and different and / or similar implementations, features, attributes and advantages are apparent from the description and drawings. Therefore, the following implementations are merely exemplary. They are not intended to be exhaustive or limit the present disclosure to the precise forms, technologies, materials and / or configurations disclosed. According to the present disclosure, many modifications and variations are possible. It should be understood that other implementations can be utilized and operational changes can be made without departing from the scope of the present disclosure. Therefore, the scope of the present disclosure is not limited to the following description only, because the description of the following implementations has been presented for the purpose of illustration and description.

[0121] The present disclosure is neither limited to any single aspect or implementation, nor to any single combination and / or arrangement of these aspects and / or implementations. In addition, the various aspects of the present disclosure and / or its implementations may be used alone or in combination with one or more of the other aspects and / or its implementations. For the sake of brevity, many of these arrangements and combinations will not be discussed and / or described separately in this article.

[0122] Disclosed herein are embodiments, implementations, methods, techniques and apparatus for protecting a gate valve (or slit valve, collectively referred to herein as a gate valve) of a semiconductor processing chamber from adverse effects of the processing chamber (e.g., process chemicals associated with semiconductor processing).

[0123] Many semiconductor processing tools (hereinafter "tools") utilize one or more processing chambers in order to process semiconductor wafers or substrates (hereinafter "wafers") using one or more types of processes on the wafer (e.g., deposition techniques including atomic layer deposition, conformal film deposition, and chemical vapor deposition, and etching techniques such as atomic layer etching). Such wafer processing typically involves the introduction and use of inert liquids and / or vapors, volatile liquids, vapors and / or compounds, radiation, and / or plasma within the processing chamber; all of which may be collectively referred to as "process chemicals." Also present in the processing chamber may be particles or debris generated during wafer processing. Some wafer processing may also be performed at various pressures, including atmospheric pressure and low pressure environments, and at different temperatures, including high temperatures.

[0124] Many tools transfer wafers into and out of a processing chamber via a wafer transfer passage (hereinafter referred to as a "passageway" or "wafer transfer passage") extending through a wall of the processing chamber. A gate valve may be placed on the end of the wafer transfer passage that is located outside the chamber, and such a gate valve may be opened and closed to allow the wafer to pass through the wafer transfer passage on its way to and from the processing chamber. The gate valve may also seal the processing chamber from the environment outside the processing chamber to prevent process chemicals from leaving the processing chamber via the passage, as well as to allow the processing chamber to be depressurized and pressurized.

[0125] Figure 1 An isometric view of an exemplary processing chamber is depicted. It can be seen that the exemplary processing chamber 100 includes four wafer processing stations 102 (only one is identified and circled for simplicity), a chamber wall 104, and an internal volume 106. The processing chamber 100 is shown without a top or lid to provide a view of the interior of the processing chamber 100. Each processing station 102 is represented as a recessed hole in the bottom of the processing chamber 100; many items that are typically included in a processing chamber, such as a pedestal, a showerhead, cooling pipes, and / or electrical conduits are not shown herein. It can be seen that the chamber wall 104 extends around and contains the internal volume 106, which is generally within the dotted and double-dash lines; the outer surface of the chamber wall 104 also partially defines the exterior of the processing chamber 100, and the inner surface of the chamber wall 104 also partially defines the internal volume 106. The internal volume 106 is where semiconductor processing occurs. The exemplary processing chamber 100 also includes a wafer transfer channel 108, which is generally depicted within the dashed line. The wafer transfer passage 108 includes an opening 110, shown shaded, in the chamber wall 104 outside the processing chamber 100, and extends from the opening 110 to the interior volume 106 along a first axis 112. A gate valve, not shown, may be attached to the processing chamber 100 at a front plate 114 of the chamber wall 104. The front plate 114 may be considered to be part of the chamber wall 104, although the front plate 114 is provided by a separate component fixed to the processing vessel 100.

[0126] Figures 2 to 5 shows the wafer passing through Figure 1 FIG. 1 shows an exemplary wafer transfer passage of a process chamber. It can be seen that a wafer 116 can pass through the wafer transfer passage 108, including through the opening 110, and enter the internal volume (not labeled; for the purpose of clarity, the wafer transfer passage and the opening are only shown in FIG. 1 ). Figure 2 The wafer can also leave the internal volume by passing through the wafer transfer channel 108. Many tools use a robot to transfer the wafer through the wafer transfer channel 108, which Figures 2 to 5 The opening 110 and the wafer transfer passage 108 may be configured to allow a wafer and a robot arm to pass through the wafer transfer passage 108 .

[0127] The inventors have discovered that gate valves may be adversely affected by process chemicals (e.g., chemicals used in wafer processing as described above). For example, some components of the gate valve (e.g., rubber seals) may be damaged and / or destroyed by such process chemicals, requiring maintenance and / or replacement, which may increase costs, increase downtime of the processing chamber, increase labor, and reduce wafer throughput. Process chemicals may also cause condensation of chemicals, for example, material deposition on portions of the gate valve such as the inner surface, which may reduce the function and effectiveness of the gate valve and may result in improper operation and / or poor sealing of the gate valve. These adverse condensation effects may also require maintenance and replacement, which again may increase costs, increase downtime of the processing chamber, increase labor, and reduce wafer throughput.

[0128] One current technique to prevent process chemicals from affecting the gate valve is to place a purge gas extension between the chamber wall (i.e., outside the opening) and the gate valve. Some of these purge gas extensions are configured to supply and distribute purge gas into the wafer transfer channel through holes (e.g., holes) in the purge gas extension. Such introduction of purge gas can create a partial barrier or partial gas curtain between the process chemicals and the gate valve.

[0129] However, there are many disadvantages to this current technology. For example, the current technology increases the footprint, i.e., the length, of the processing chamber. In one example, the purge gas extension is approximately 1.25 inches thick, which results in a 2.5% increase in the length of the processing chamber. Longer processing chambers may require the use of longer robotic arms to move wafers, which may result in increased robotic arm costs, greater robotic arm deformation, and reduced yields in order to compensate for the increased travel distance of the wafers and / or the larger footprint of the robotic arm unit. In addition, the current technology uses a sealing O-ring between the purge gas extension and the processing chamber, which in turn may increase the chamber leakage rate and / or reduce the reliability of the processing chamber.

[0130] As discussed herein, the inventors of the present disclosure have developed novel embodiments, implementations, methods, techniques, and apparatus for protecting a gate valve of a processing chamber from adverse effects of the processing chamber (e.g., process chemicals). In one embodiment of the present disclosure, the processing chamber is modified to allow an insert to be inserted into at least a portion of a wafer transfer channel between the gate valve and the internal volume, the insert extending at least partially around the opening of the wafer transfer channel so that the combination of the insert into the wafer transfer channel creates a gas distribution channel and a gap between the first wall surface of the wafer transfer channel and the insert. When gas is supplied into the gas distribution channel, the gap distributes a substantially uniform planar gas jet into the wafer transfer channel. Such a planar gas jet can produce a consistent gas barrier between the processing chamber and the gate valve. For purposes of illustration, a partial cross-sectional view of the processing chamber will be shown and discussed.

[0131] Figure 6 Depicted Figure 1 . A top view of a process chamber and a portion of a process chamber in FIG. The completely uncut process chamber is on the left, and on the right is a "portion" of a cross section of the process chamber including the wafer transfer channel. It is this portion that will be discussed further below.

[0132] Figure 7 Depicted Figure 6 10. A front plan view of a portion of a processing chamber in FIG. 10. A front plate 114 and a portion of chamber wall 104 are labeled, and an opening 110 of wafer transfer passage 108 is identified with shading. Opening 110 can have a first substantially rectangular cross-sectional area perpendicular to first axis 112. The substantially rectangular cross-sectional area can include a rectangle having one or more rounded corners and / or one or more sides that may not be exactly parallel to (e.g., within 10% of parallel) opposing sides. In some cases, the opening can be an oblong opening, such as similar to a racetrack (two straight lines connected by a semicircular end cap); for purposes of this disclosure, an oblong opening can be considered "substantially rectangular."

[0133] Figure 8 Depicted Figure 7 1. An isometric view of a portion of a processing chamber in FIG. 1. The chamber wall 104, the front plate 114, and the first axis 112 can again be seen, but the opening 110 of the wafer transfer passage is shown at its periphery. The wafer transfer passage 108, generally within the dashed line, extends through the chamber wall 104 along the first axis 112 and includes an inner passage surface 118 and a first recessed surface 120, both of which are partially shown.

[0134] The inner channel surface 118 may define the opening 110 of the wafer transfer channel 108. Figure 8 As shown in the partial view, the inner channel surface 118 forms a boundary of the opening 110 (not labeled) in the process chamber wall 104. The opening 110 may also extend through the front plate 114, and in some embodiments, such as Figure 8 As shown, the front plate 114 is part of the chamber wall 104 .

[0135] Although the first concave surface 120 is Figure 8 Although only partially visible in FIG. 1 , the first recessed surface 120 may extend at least partially around the inner channel surface 118 . Fig. 9 Shows Figure 7 FIG. 1 is an off-angle view of the back side of a portion of a process chamber in FIG. Here, the first recessed surface 120 is shaded and can be seen to extend at least partially around the inner channel surface 118, which is identified at its periphery. The first recessed surface 120 can also be offset outwardly from the inner channel surface 118 when viewed along the first axis 112. Fig.10 Shows Figure 7A top view of the back side of a portion of a processing chamber in FIG. Fig.10 From a perspective of 110 (which is along the first axis 112 indicated by "X"), the contours of the inner channel surface 118 and the first recessed channel 120 can be seen; these marked contour portions can be considered to be the perimeter of each surface, respectively. For illustrative purposes, the inner channel surface 118 is shown as a dashed line, while the first recessed surface 120 is shown as a dotted line. Fig.10 As shown, the first recessed channel 120 is offset outwardly from the inner channel surface 118 when viewed along the first axis 112. As used herein, unless otherwise specified or apparent from the context, "outwardly" refers to a direction away from the first axis 112. Fig.10 In the illustrated embodiment, the first recessed channel 120 can also be seen to extend completely around the inner channel surface 118 when viewed along the first axis 112. In some other embodiments, the first recessed channel 120 can extend around only a portion or portions of the inner channel surface 118, rather than completely around the inner channel surface 118, when viewed along the first axis 112.

[0136] In some embodiments, the inner channel surface 118 and the first recessed channel surface 120 may be parallel to each other. Fig.10 As shown, the inner channel surface 118 and the first recessed channel surface 120 are parallel to each other and to the first axis 112. In some such embodiments, the two surfaces may be substantially parallel (may be within 10% of parallel) to each other and / or the first axis 112.

[0137] The wafer transfer channel 108 may also include a first wall surface 122 extending between the inner channel surface 118 and the first recessed surface 120. Fig. 9 In FIG. 1 , a portion of the first wall surface 122 can be seen extending between the inner channel surface 118 and the first recessed surface 120. Fig.10 , the first wall surface 122 can again be seen extending between the inner channel surface 118 and the first recessed surface 120. Fig.10 1 , the first wall surface 122 is perpendicular to the first axis 112. In some embodiments, the first wall surface 122 can be substantially perpendicular to the first axis 112 (it can be within 10% of perpendicular to the first axis 112). In some other embodiments, one or more portions of the first wall surface 122 can be at an oblique angle to the first axis 112.

[0138] Fig.11 Shows Figure 71 and 2. Different off-angle views of a portion of a processing chamber in FIG. 1. As can be seen, at least some features of the wafer transfer passage 108 that are blocked from view by the processing chamber wall 104 are shown in phantom. The opening 110, the inner passage surface 118, the first recessed surface 120, and the first wall surface are all identified in the figure. As can be more clearly seen, the inner passage surface 118 defines and defines the opening 110, the first recessed surface 120 extends around the inner passage surface 118, and the first wall surface 122 extends between the two surfaces.

[0139] The semiconductor processing chamber 100 may further include an insert that may be inserted into at least a portion of the wafer transfer passage 108 . Fig.12 An isometric view of an exemplary insert is shown. The insert 124 includes an insert inner surface 126, an insert opening 128, a first insert outer surface 130, and an insert front surface 132. The insert inner surface may define the insert opening 128. The insert opening 128 may have a second substantially rectangular cross-sectional area that may be perpendicular to the first axis 112. Similar to the first substantially rectangular cross-sectional area, the second substantially rectangular cross-sectional area may have rounded corners and may have edges that are substantially parallel to each other (e.g., within 10% of parallel), or may be oblong. The size of the insert opening 128 may also be designed to allow a wafer and a robotic arm to pass through the insert opening 128.

[0140] The first insert outer surface 130 may extend at least partially around the insert inner surface 126 when viewed along the first axis 112 . Fig.13 Depicted Fig.12 126. It can be seen that the first insert piece outer surface 130 extends around the insert piece inner surface 126. In some embodiments, the first insert piece outer surface 130 can extend completely around the insert piece inner surface 126. In some other embodiments, the first insert piece outer surface 130 can extend only partially around the insert piece inner surface 126. In some such other embodiments, one or more portions of the first insert piece outer surface 130 can extend partially around the insert piece inner surface 126. For example, the first insert piece outer surface 130 may not be an abutting surface, in which case another surface or feature (e.g., one or more dividers) may cause a break or discontinuity in the first insert piece outer surface 130.

[0141] from Fig.13It can also be seen in FIG. 1 that the first insert outer surface 130 can be offset outwardly from the insert inner surface 126 when viewed along the first axis 112. In some embodiments, the first insert outer surface 130 can be offset from the insert inner surface 126 by a substantially constant spacing around the insert inner surface 126, and in some other embodiments, the offset spacing can vary around the insert inner surface 126. For example, when viewed along the first axis 112, Fig.12 and 13 The insert 124 shown in FIG. 1 includes a first insert outer surface 130 offset by a varying distance from the insert inner surface 126. See also the following discussion of Fig.14 .

[0142] As mentioned above, the insert may be included in Fig.13 The insert front surface 132 may be oriented perpendicular to the first axis 112, but in other implementations, the insert front surface may be angled relative to the first axis 112 (see, for example, Fig.23 ). In some embodiments, Fig.13 and 21 As shown, the insert front surface 132 may not be a single continuous surface, but may include one or more (e.g., four) sub-portions. In some other embodiments, the insert front surface 132 may be a continuous surface. As discussed in more detail below, when the insert 124 is inserted into the chamber wall 104, the insert front surface 132 may also face the first wall surface 122. In this article, "facing" means that the two surfaces are oriented toward each other so that a line extending from at least one point on one surface in a direction perpendicular to the surface intersects with a point on the other surface. In this context, "facing" may also include two surfaces that are parallel to each other or substantially parallel to each other (here meaning within 10% of parallel, for example, + / -9° of parallel).

[0143] In some embodiments, Fig.12 and 13As further shown, the insert 124 may also include a second insert outer surface 134 that may extend at least partially around the first insert outer surface 130 and, when viewed along the first axis 112, may also be offset outwardly from the first insert outer surface 130 in a manner similar to the first insert outer surface 130 relative to the insert inner surface 126. In some such embodiments, as described above, one or more portions of the second insert outer surface 134 may extend partially around the first insert outer surface 130 and may have other features or surfaces that cause one or more breaks and / or discontinuities in the second insert outer surface 134. The second insert outer surface may alternatively extend completely around the first insert outer surface 130 when viewed along the first axis 112.

[0144] In some embodiments, and as Fig.12 and 13 As shown, the insert 124 may also include a second wall surface 136 spanning between the second insert outer surface 134 and the first insert outer surface 130. Generally, the second wall surface 136 extends around the first insert outer surface 130 to the same extent as the second insert outer surface 134. In some such embodiments, for example, in embodiments where the second insert outer surface 134 extends completely around the first insert outer surface 130, the surface 136 extends completely around the first insert outer surface 130.

[0145] Fig.13 Also depicted is that the second insert outer surface 134 is offset outwardly from the first insert outer surface 130 when viewed along the first axis 112. As described above, "outwardly" refers to a direction away from the first axis. In some embodiments, the second insert outer surface 134 can be offset from the first insert outer surface 130 by a substantially constant spacing, and in some other embodiments, the offset spacing can vary around the first insert outer surface 130. For example, Fig.13 The illustrated insert 124 includes a second insert outer surface 134 that is offset from the first insert outer surface 130 by a varying spacing when viewed along the first axis 112 .

[0146] Fig.14 Shows Fig.13 Front view of the insert. Fig.14The view is along the first axis 112 identified by the "X". The insert opening 128 is identified and is perpendicular to the first axis 112. The insert inner surface 126, the first insert outer surface 130, and the second insert outer surface 134 are all seen in profile, such as on an edge, with the first insert outer surface 130 extending completely around and offset outward from the insert inner surface 126, and the second insert outer surface 134 extending completely around and offset outward from the first insert outer surface 130. As described above, when viewed along the first axis 112, Fig.14 Also shown is the first insert outer surface 130 being offset by varying spacings from the insert inner surface 126. Likewise, when viewed along the first axis 112, the second insert outer surface 134 is offset by varying spacings from the first insert outer surface 130.

[0147] As described above, the insert 124 is inserted into at least a portion of the wafer transfer passage 108 of the chamber wall 104 . Fig.15 The insert is shown inserted into Figure 6 Two off-angle views of a portion of the chamber wall of the wafer transfer channel 108. Fig.15 The top portion of FIG. 1 shows an exploded view of the insert 124 external to but aligned with a wafer transfer passage (not labeled) of the chamber wall 104. The bottom portion shows the insert 124 positioned internal to the wafer transfer passage (not labeled) of the chamber wall 104. In some embodiments, one or more portions of the insert 124 may be positioned external to the wafer transfer passage 108 and / or external to the chamber wall 104.

[0148] Additional features of a chamber wall having an insert inserted into at least a portion of a wafer transfer passage will now be discussed. Fig.16 Depicted Fig.15 A cross-sectional off-angle view of a portion of a process chamber wall is shown; a cut has been made through a portion of the process chamber wall to expose interior portions of the chamber wall, wafer transfer passage, and insert so that additional features can be discussed. It can be seen that insert 124 is installed in the wafer transfer passage (not labeled), and some visible features include portions of inner passage surface 118, first recessed surface 120, insert inner surface 126, first insert outer surface 130, and gas inlet 138. Gas inlet 138 can extend through a portion of chamber wall 104 and can extend through first recessed surface 120, as shown in FIG. Fig.16 In some embodiments, the gas inlet 138 may be connected to a gas supply, which may include a purge gas supply. In some embodiments, the insert 124 is located within the wafer transfer passage 108 between the gate valve (not shown) and the interior volume 106 .

[0149] Fig.17Depicted Fig.16 A cross-sectional side view of a portion of a process chamber wall in FIG. Fig.17 1, gas inlet 138 is identified along with portions of first recessed surface 120, first wall surface 122, first insert outer surface 130, second wall surface 136, and insert inner surface 126. As discussed in more detail below, a gas distribution channel (not identified here) is at least partially defined by first recessed surface 120, first insert outer surface 130, and first wall surface 122. In some embodiments and as Fig.17 As shown, the gas distribution channel is further partially defined by the second wall surface 136. The gas distribution channel can also be fluidly connected to the gas inlet 138 so that gas can flow into the gas distribution channel from the gas inlet 138. It should be understood that the gas inlet 138 can be configured to allow any suitable gas or liquid to flow into the gas distribution channel.

[0150] Fig.18 An isometric view of a volumetric representation of the gas distribution channels is depicted. Fig.18 , a volume representation of the gas distribution channel 1840 is generally shown, and surfaces that at least partially define the gas distribution channel 1840 are identified. As shown, the first wall surface 122 defines a front portion of the gas distribution channel 1840, the first recessed surface 120 defines an outer circumferential portion of the gas distribution channel 1840, and the first insert outer surface 130 defines an inner circumferential portion of the gas distribution channel 1840.

[0151] In some embodiments, the gas distribution channels 1840 can follow a first path 1842 that extends at least partially around the inner surface of the insert. Fig.18 Also shown is a first path 1842 shown by a dashed-and-double-dotted line. In some embodiments, as Fig.18 As shown, the first path 1842 for the gas distribution channel 1840 completely surrounds the insert inner surface 126 ( Fig.18 In some other embodiments where the first path extends partially around an inner surface of the insert, there may be one or more breaks in the first path that prevent the first path from extending completely around the inner surface of the insert. For example, there may be one or more surfaces or features that block the gas distribution channel at one location, thereby disrupting the first path and creating two separate portions of the gas distribution channel. This can create a "C-shaped" gas distribution channel. In another example, the break in the first path can occur at the midpoint of the first path, which can be equidistant from the gas inlet. Fig.19A side view of a gas distribution channel following a first path extending partially around an insert inner surface is shown. It can be seen that the gas distribution channel 1940 follows a first path 1944 having a break identified within the dashed circle, which causes the first path 1944 to not extend completely around the insert inner surface. Such a break may be caused, for example, by a wall interrupting the first insert outer surface; the top of such a wall may be flush with the second insert outer surface, and the wall may extend from the insert front surface to the second wall surface.

[0152] The gas distribution channel 1840 may have a third cross-sectional area perpendicular to the first path 1842 . Fig. 20 Depiction Fig.18 1840 . The four surfaces defining the gas distribution channel 1840 (i.e., the first wall surface 122, the first recessed surface 120, the first insert outer surface 130, and the second wall surface 136) and the gas inlet 138 are identified. A third cross-sectional area 1844 of the gas distribution channel 1840 may also be Fig. 20 1842 is seen in and is perpendicular to the first path 1842. In some embodiments, the third cross-sectional area 1844 remains substantially constant along the first path 1842. "Substantially" here means within 10% of the average third cross-sectional area along the first path 1842. In some other embodiments, the third cross-sectional area 1844 may vary along the first path 1842. In some such embodiments, the third cross-sectional area 1844 may have two or more different cross-sectional areas, or smoothly transition between two or more different cross-sectional areas. In some embodiments, the third cross-sectional area 1844 may also be a substantially rectangular shape similar to the first and second cross-sectional areas in that one or more corners may be rounded. For example, Fig. 20 The third cross-sectional area 1844 in FIG. 1 has a rounded corner. In some other embodiments, the third cross-sectional area 1844 can be other geometric shapes including, for example, a trapezoid.

[0153] In some embodiments, the third cross-sectional area can be greater at at least one point along the first path than at another point along the first path. For example, the first path can have a first point and a second point such that the first point is closer to the gas inlet than the second point along the first path. In some such embodiments, the first point can be the closest point to the gas inlet and the second point is the farthest point from the gas inlet along the first path. In some embodiments, the third cross-sectional area at the second point can be greater than the third cross-sectional area at the first point.

[0154] Return to reference Fig. 20, a first point 1846 of the first path 1842 and a second point 1848 of the first path 1842 are identified in the figure. Although not shown in the figure, the gas inlet is closer to the first point 1846 than to the second point 1848 along the first path 1842, so that the gas can flow from the first point 1846 to the second point 1848 in the direction of the black arrow. Fig. 20 , the third cross-sectional area 1844 at the second point 1848 is greater than the third cross-sectional area 1844 at the first point 1846. In some embodiments, the first path 1842 can have additional points at which the third cross-sectional area 1844 is greater than, less than, or substantially equal to the third cross-sectional area 1844 at one or more other points. For example, the third cross-sectional area 1844 can be substantially constant (e.g., within 10% of the cross-sectional area) for a portion along the first path 1842, then gradually increase in size along the first path 1842, and then remain substantially constant for different portions along the first path 1842.

[0155] When the insert is inserted into at least a portion of the wafer transfer channel, the insert and / or the wafer transfer channel is configured to form a gap between a first wall surface of the wafer transfer channel and a front surface of the insert. Fig.21 Shows Fig.12 In some embodiments, the insert 124 may include: Fig.21 One or more spacers shown. Here, the insert 2124 includes four spacers 2150 identified within the dashed ellipse. The spacers 2150 can contact a first wall surface of a wafer transfer channel (not shown) so as to separate the insert front surface 2132 from the first wall surface by a first gap distance. The first gap distance can be in a range between about 0.005 inches and about 0.040 inches. For example, the first gap distance can be approximately 0.010 inches. In some embodiments, the first gap distance can be substantially constant (within 10% of other first gap distances), while in some other embodiments, the first gap distance can vary along the insert front surface 2132.

[0156] In some embodiments, for example, Fig.21 , the spacer 2150 extends from the front surface 2132 of the insert. Fig.21 Depicted Fig.12 In some such embodiments, the spacer may also or alternatively extend from the surface of the wafer transfer channel.

[0157] Fig. 22 Describes something like Fig.17A partial cross-sectional side view of an exemplary portion of a chamber wall and insert is shown. It can be seen that a portion of the chamber wall 2204 and the insert 2224 are oriented such that the insert front surface 2232 is separated from the first wall surface 2222 by a first gap distance 2252. The first gap distance 2252 can be measured from any point along the insert front surface 2232. As described above, the insert front surface 2232 and the first wall surface 2222 can be substantially parallel to each other, such as in Fig. 22 In some embodiments, the insert front surface 2232 and the first wall surface 2222 can be perpendicular or substantially perpendicular to the first axis (not shown). The insert front surface 2232 and the first wall surface 2222 can also be at an angle to each other. In some such embodiments, the first wall surface 2222 can be perpendicular to the first axis, while the front surface 2232 is at an angle to the first wall surface 2222, such as Fig.23 shown. Fig.23 Shows something like Fig. 22 2232 is a partial cross-sectional side view of a chamber wall portion shown. In some other embodiments, the front surface 2232 may be perpendicular to the first axis, and the first wall surface 2222 is at an oblique angle to the front surface 2232. In some other embodiments, both surfaces are not perpendicular to the first axis, but such surfaces can still be at an oblique angle to each other. In all such embodiments, the first wall surface 2222 and the front surface 2232 can be considered to face each other (which can include being parallel to each other).

[0158] The first recessed surface may also be separated from the first insert outer surface by a first distance, e.g. Fig. 22 As shown. A first distance 2266 can be seen between the first recessed surface 2220 and the first insert outer surface. As discussed below, this distance can vary, but in some implementations, it can be between about 0.010 inches and about 0.50 inches, and can also be about 0.200 inches. Although combined Fig. 22 220 and the first insert outer surface 2230, such as at least Fig.16 and Fig.17 In addition, the first distance can provide a dimension of the third cross-sectional area discussed herein.

[0159] The first edge where the insert front surface and the insert interior surface meet may be sharp, rounded or chamfered. Fig. 22, a first edge 2254 where the insert front surface 2232 and the insert interior surface 2226 meet is identified within the dashed circle. As shown, the first edge 2254 is at a substantially 90 degree angle, i.e., "sharp" ("substantially" means within + / - 5 degrees of vertical). In some embodiments, the first edge 2254 may also be an obtuse or acute angle, and in some other embodiments, may be rounded or chamfered. Similarly, the second edge 2256 where the first wall surface 2222 and the inner channel surface 2218 meet may be similarly configured as the first edge 2254.

[0160] In some embodiments, the second insert outer surface may be proximate to the first recessed surface when the insert is inserted into at least a portion of the wafer transfer passage. Fig.24 Depicted Fig.17 104 and the insert 124 are shown in an enlarged cross-sectional side view of a portion of the chamber wall and the insert shown in . It can be seen that for the purpose of clarity, the chamber wall 104 and the portion of the wafer transfer channel (not identified) are shown with dark shading rather than cross-hatching, and for the purpose of clarity, the insert 124 inserted into at least a portion of the wafer transfer channel is identified with light shading rather than cross-hatching. The first recessed surface 120 and the second insert outer surface 134 are considered to be close to each other. In some embodiments, the first recessed surface 120 and the second insert outer surface 134 can be in contact with each other so that they are fluid-tight to each other. In some other embodiments, some material or spacer can be placed between the first recessed surface 120 and the second insert outer surface 134. In some embodiments, the chamber wall 104 (including the wafer transfer channel) and the insert 124 are configured so that the gas and / or fluid in the gas distribution channel whose cross section is identified as 2440 does not travel between the space that may exist between the first recessed surface 120 and the second insert outer surface 134.

[0161] In some embodiments, the wafer transfer channel may include a second recessed surface extending around the inner channel surface and offset inwardly from the first recessed surface when viewed along the first axis. The phrase "inwardly" means closer to the first axis. Fig.25 Shows something similar to Fig.17 An enlarged cross-sectional side view of a portion of the chamber wall and insert is shown. Fig.25 As can be seen, the wafer transfer channel of the chamber wall 2504 includes a second recessed surface 2558 and a third wall surface 2560 extending between the first recessed surface 2520 and the second recessed surface 2558. In some such configurations, such as Fig.25As shown, the insert 2524 may not include a second insert outer surface and may have only a first insert outer surface 2530. The first insert 2524 and the wafer transfer channel may be configured such that the second recessed surface 2558 is adjacent to the first insert outer surface 2530, as shown in FIG. Fig.25 As shown. Similar to the above discussion, in some embodiments, a spacer or material can be placed between the two surfaces. In addition, in some such embodiments, a gas distribution channel whose cross-section is identified as 2540 can be partially defined by at least the third wall surface 2560, the first insert outer surface 2530 and the first wall surface 2522, and such a gas distribution channel can be constructed similarly to the above discussion.

[0162] In some such embodiments, in which the wafer transfer channel may include a second recessed surface extending around the inner channel surface and offset inwardly from the first recessed surface when viewed along the first axis, the insert may also include a second outer surface as previously discussed. Fig.26 Describes something similar to Fig.17 26. An enlarged cross-sectional side view of a portion of the chamber wall and insert is shown. It can be seen that the wafer transfer channel of the chamber wall 2604 includes a second recessed surface 2658 and a third wall surface 2660 extending between the first recessed surface 2620 and the second recessed surface 2658. Similar to previously discussed, the insert 2624 includes a second insert outer surface 2634 that can extend at least partially around a first insert outer surface (not shown) and can also be offset outwardly from the first insert outer surface in a manner similar to the first insert outer surface relative to the insert inner surface 126, and includes a second wall surface 2636 extending between the second insert outer surface 2634 and the first insert outer surface 2630. In some such embodiments, the second recessed surface 2658 can be proximate to the second insert outer surface 2634, as discussed above.

[0163] Additionally, in some such embodiments, a gas distribution channel (whose cross-section is identified as 2640) may be partially defined by at least a third wall surface 2660, a second wall surface 2636, a first insert outer surface 2630, a first recessed surface 2620, and a first wall surface 2622, and such a gas distribution channel may be constructed similarly to that discussed above.

[0164] In some embodiments, the insert can be made of two or more parts, so that when assembled, the two or more parts collectively form at least one or more surfaces of the insert, which at least one or more surfaces may include an insert inner surface, a first insert outer surface, an insert front surface, a second insert outer surface, and a second wall surface. In some embodiments, the insert can be made of various materials, including but not limited to ceramic, nickel-plated aluminum, and stainless steel.

[0165] In some embodiments, the first cross-sectional area can be substantially equal to the second cross-sectional area. "Substantially equal to" means within 10% of the second cross-sectional area. In some such embodiments, the first cross-sectional area can be substantially equal to the second cross-sectional area in size and shape. For example, Fig. 27 Shows Fig.10 An elevated view of a portion of a process chamber in Fig.13 and 14 The inner channel surface 118, which is identified by a dashed line, defining an opening having a first cross-sectional area 2762 and the insert inner surface 126, which defines an insert opening having a second cross-sectional area 2764, are shown in FIG. Fig. 27 Medium logo. Fig. 27 The viewing angle is along the first axis 112, again identified by "X". The first cross-sectional area 2762 and the second cross-sectional area 2764 can both be perpendicular to the first axis 112. Fig. 27 It can also be seen from the perspective of that the opening 110 is the same area as the first cross-sectional area 2762, and the insert opening is the same area as the second cross-sectional area 2764. Fig. 27 , the first cross-sectional area 2762 and the second cross-sectional area 2764 are also substantially equal in size and shape. In some embodiments, the first cross-sectional area and / or the second cross-sectional area can vary in size along the first axis, and in some embodiments can remain constant in size along the first axis.

[0166] In some embodiments, the inner channel surface can be aligned with the inner surface of the insert. Fig.17 , the inner channel surface 118 and the insert inner surface 126 can be seen, and as shown, the two surfaces are aligned with each other. Fig.16 Also shown are the inner channel surface 118 and the insert inner surface 126 aligned with each other. Such alignment may be alignment relative to the first axis and / or alignment relative to each other.

[0167] As described above, when the insert is inserted into the wafer transfer channel, the gas distribution channel is defined (i.e., generated) by some surfaces of the insert and the wafer transfer channel. The gas distribution channel is also fluidically connected to the gas inlet so that the gas can flow from the gas inlet and enter the gas distribution channel. The insert and the wafer transfer channel are also configured to enable the gas in the gas distribution channel to flow through the gap formed between the first wall surface and the front surface of the plug-in. The insert and the wafer transfer channel can be configured to enable the gas to flow through the object gap in a generally uniform manner and / or in a uniformly distributed manner. In some such implementations, the flow can be a uniform sheet of flow. It should be noted that the gas does not flow out of the gas distribution channel through any nozzle, but flows through a linear gap, which avoids the point injection that may cause an uneven flow effect.

[0168] Fig.28 Describes something like Fig.18 18. An isometric view of a volumetric representation of a gas distribution channel 1840. The gas distribution channel 1840 is seen along with a shaded volume 2868 representing gas flowing through a gap between the first wall surface 122 (not shown) and the insert front surface 132 (not shown). Fig.29 Shows Fig.28 Angled cross-sectional view of a volume representation of the gas distribution channel of FIG. 2868. As can be seen, the shaded area representing the gas flowing through the gap 2868 is a thin planar gas jet. As indicated by the arrows, this representative area is intended to illustrate at least the general direction of the gas flowing through the target gap (which can be considered a planar jet or "sheet") and is not intended to depict the actual gas flow path. In some embodiments, spacers between the insert and the wafer transfer channel can block some of the gas flow between the gaps. For example, in Fig.28 In some embodiments, the area where gas does not flow out of the gas distribution channel (eg, corners) is the area where the spacer is located within the insert 124. In some such embodiments, the insert and the wafer transfer channel can be configured to enable gas to be evenly distributed within the wafer transfer channel.

[0169] The third cross-sectional area (i.e., the cross-sectional area of ​​the gas distribution channel) and / or the gap can also be configured to enable gas to flow into the gas distribution channel and exit through the gap at a relatively uniform flow rate around the interior insert surface. Such a configuration can vary many aspects of the embodiments discussed herein, including but not limited to: one or more dimensions of the third cross-sectional area, the first gap distance, the angle of the insert front surface, and the variation of the third cross-sectional area along the first path. Such a configuration can also be based on many factors, including but not limited to: the temperature and pressure of the purge gas, the process chemistry, the temperature and pressure of the process gas, and the temperature and pressure of the processing chamber.

[0170] In some embodiments of the present disclosure, the insert may be inserted and secured to the chamber wall, for example, by brazing or mechanical means such as screws. Fig.17 , the chamber wall and insert include a fixing area 1770, identified by a dotted circle, to receive a screw that can attach the insert to the chamber wall.

[0171] A semiconductor processing tool that may include the subject processing chamber may flow gas into the gas distribution passageway during one or more stages of semiconductor processing. In some such implementations, the gas may flow constantly through the subject gap, while in some other such implementations, the gas may flow through the gap when process chemicals are present in the processing chamber and / or perhaps during wafer transfer through the wafer transfer passageway.

[0172] Another embodiment of the present disclosure is a kit including a semiconductor processing chamber and an insert. The semiconductor processing chamber of the kit may include: an internal volume for semiconductor processing, a chamber wall at least partially defining the outer side of the semiconductor processing chamber and the internal volume, and a wafer transfer channel extending from the outer side of the semiconductor processing chamber through the chamber wall to the internal volume along a first axis. The wafer transfer channel may have: an inner channel surface having a first substantially rectangular cross-sectional area perpendicular to the first axis, a first recessed surface extending around the inner channel surface and offset outwardly from the inner channel surface when viewed along the first axis, and a first wall surface extending between the inner channel surface and the first recessed surface, and a gas inlet fluidly connected to the first recessed surface. The insert of the kit may include: an opening having a second rectangular cross-sectional area perpendicular to a second axis defined by the insert inner surface, a first insert outer surface extending at least partially around the insert inner surface and offset outwardly from the insert inner surface when viewed along the first axis, and an insert front surface. The insert of the kit and the semiconductor processing chamber can be configured so that at least a portion of the insert is configured to be installed to be inserted into at least a portion of the wafer transfer channel, the chamber wall is configured so that at least a portion of the insert is installed to be inserted into at least a portion of the wafer transfer channel, and when at least a portion of the insert is installed in at least a portion of the wafer transfer channel: the first recessed surface, the first insert outer surface and the first wall surface at least partially define a gas distribution channel, the gas distribution channel is fluidly connected to the gas inlet, the first recessed surface is separated from the first insert outer surface by a first distance, and the insert front surface is separated from the first wall surface by a first gap distance.

[0173] It should be noted that the semiconductor processing chamber and insert of the kit may include all features and limitations and may be configured as discussed and illustrated above with respect to any other inserts and semiconductor processing chambers, etc., and that these discussions and drawings are incorporated and applied by reference to these items.

[0174] The inventors have discovered a number of benefits of the apparatus relative to the current technology. For example, the apparatus and method discussed herein do not increase the chamber footprint, do not require additional sealing O-rings, require limited or no maintenance when installing the insert into the wafer transfer channel, and the gas flowing through the gap can create a heat transfer barrier between the processing chamber and the high temperatures in the valve. In addition, the apparatus can prevent debris and particles generated during semiconductor processing from leaving the processing chamber through the wafer transfer channel.

[0175] Unless the context of the present disclosure clearly requires otherwise, throughout the specification and embodiments, the words "include", "comprise", etc. should be interpreted as inclusive meanings that are opposite to exclusive or exhaustive meanings; that is, the meaning of "including but not limited to". Words using the singular or plural number generally also include the plural or singular number, respectively. In addition, the words "herein", "below", "above", "below" and words of similar meaning refer to the present application as a whole, not to any specific part of the present application. When the word "or" is used to refer to a list of two or more items, the word covers all the following interpretations of the word: any item in the list, all items in the list, and any combination of items in the list. The term "implementation" refers to the implementation of the techniques and methods described herein and the physical objects that embody the structure and / or combine the techniques and / or methods described herein. Unless otherwise specified, the term "substantially" means within + / -5% of the value shown. For example, "substantially parallel" means + / -5% of the angle range between 0° and 90°.

Claims

1. A semiconductor processing chamber, comprising: a chamber wall at least partially defining the semiconductor processing chamber; Gas inlet; a wafer transfer passage extending through the chamber wall along a first axis and comprising: an inner channel surface defining an opening perpendicular to said first axis, a first recessed surface extending at least partially around the inner passage surface and offset outwardly from the inner passage surface when viewed along the first axis, and a first wall surface extending between the inner channel surface and the first recessed surface; as well as An insert comprising: an insert inner surface defining an insert opening perpendicular to said first axis, a first insert outer surface extending at least partially around and offset outwardly from the insert inner surface when viewed along the first axis, and an insert member front surface extending between said insert member inner surface and said first insert member outer surface, in: At least a portion of the insert is inserted into the wafer transfer channel, The first recessed surface, the first insert outer surface, and the first wall surface at least partially define a gas distribution channel, The gas distribution channel is fluidly connected to the gas inlet, the first recessed surface is offset outwardly from the first insert outer surface, the insert front surface is offset from the first wall surface along the first axis, The insert front surface is oriented at one of: a first oblique angle relative to the first axis, or perpendicular to the first axis; and The first wall surface is oriented one of: at a second oblique angle to the first axis, or perpendicular to the first axis. 2 . The semiconductor processing chamber of claim 1 , wherein the insert front surface and the first wall surface are parallel to each other.

3. The semiconductor processing chamber of claim 1, wherein: The insert front surface is oriented at the first oblique angle relative to the first axis, and The first wall surface is oriented at the second oblique angle relative to the first axis.

4. The semiconductor processing chamber of claim 1, wherein: The insert front surface is perpendicular to the first axis, and The first wall surface is oriented at the second oblique angle relative to the first axis.

5. The semiconductor processing chamber of claim 1, wherein: The insert front surface is oriented at the first oblique angle relative to the first axis, and The first wall surface is perpendicular to the first axis.

6. The semiconductor processing chamber of claim 1, wherein the insert front surface and the first wall surface are both perpendicular to the first axis.

7. The semiconductor processing chamber of claim 1, wherein: The insert front surface and the insert inner surface meet at a first edge, The first edge is rounded, sharp or chamfered, the first wall surface and the inner channel surface meet at a second edge, and The second edge is rounded, sharp or chamfered.

8. The semiconductor processing chamber of claim 1, further comprising one or more spacers extending from the insert front surface in a direction parallel to the first axis.

9. The semiconductor processing chamber of claim 1, wherein the insert front surface and the first wall surface face each other.

10. An insert for use in a wall of a semiconductor processing chamber, the insert comprising: an insert inner surface extending through the insert along a first axis and defining an insert opening having a substantially rectangular cross-sectional area perpendicular to the first axis, a first insert outer surface extending at least partially around and outwardly offset from the insert inner surface when viewed along the first axis, an insert front surface extending between the insert inner surface and the first insert outer surface, wherein the insert front surface is positioned at an oblique angle relative to the first axis, a second insert outer surface extending at least partially around and offset outwardly from the first insert outer surface when viewed along the first axis, and an insert wall surface extending between the first insert outer surface and the second insert outer surface, Wherein, at least a portion of the insert is configured to be inserted into a wafer transfer channel extending along a first axis from an outside of a semiconductor processing chamber through a wall of the semiconductor processing chamber to an interior volume.

11. The insert of claim 10, wherein: The insert front surface and the insert interior surface meet at a first edge, and The first edge is rounded, sharp or chamfered.

12. The insert of claim 10, wherein the insert front surface is perpendicular to the first axis.

13. The insert of claim 10, further comprising one or more spacers extending from the insert front surface in a direction parallel to the first axis.

14. The insert of claim 10, wherein: The first insert outer surface extends completely around the insert inner surface, and The second insert outer surface extends completely around the insert inner surface.

15. The insert of claim 10, wherein the insert is made of two or more components that, when assembled, collectively form the insert inner surface, the first insert outer surface, the insert front surface, the second insert outer surface, and the insert wall surface.

16. A semiconductor processing chamber comprising: Internal volumes used for semiconductor processing, a chamber wall at least partially defining an exterior side of the semiconductor processing chamber and the interior volume, a wafer transfer passage extending along a first axis from the outside of the semiconductor processing chamber through the chamber wall to the interior volume and having: an inner channel surface defining an opening having a first substantially rectangular cross-sectional area perpendicular to the first axis, a first recessed surface extending at least partially around the inner passage surface and offset outwardly from the inner passage surface when viewed along the first axis, and a first wall surface extending between the inner channel surface and the first recessed surface; as well as A gas inlet is fluidly connected to the first recessed surface.

17. The semiconductor processing chamber of claim 16, wherein the first wall surface is oriented at one of: an oblique angle relative to the first axis and perpendicular to the first axis.

18. The semiconductor processing chamber of claim 16, wherein: the first wall surface and the inner channel surface meet at a second edge, and The second edge is rounded, sharp or chamfered.

19. The semiconductor processing chamber of claim 16, wherein: The wafer transfer channel further includes a second recessed surface extending around the inner channel surface and offset inwardly from the first recessed surface when viewed along the first axis; as well as The wafer transfer passage further includes a second wall surface extending between the second recessed surface and the first recessed surface.

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