Light irradiation device, light irradiation method, and storage medium

Abstract

The present invention provides a light irradiation device, which includes: a processing chamber for storing a substrate; a line source chamber for storing a ray source of energy rays; a partition wall separating the processing chamber from the line source chamber; a plurality of windows, which are arranged in the partition wall and can transmit energy rays emitted from the ray source to the substrate in the processing chamber; and a plurality of gas release portions, which are respectively arranged around the plurality of windows in the processing chamber and release inactive gas along the surfaces of the plurality of windows. According to the present invention, the stability of light irradiation processing can be effectively improved.

Description

Technical Field

[0001] The present invention relates to a light irradiation device, a light irradiation method and a storage medium. Background Art

[0002] Patent document 1 records that in the manufacturing process of a semiconductor device, the steps of forming a resist film on the surface of a substrate, exposing the resist, patterning the resist, irradiating the entire surface of the resist with light having a wavelength of less than 200 nm, and etching the lower layer of the resist film are sequentially performed.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2001-127037. Summary of the invention

[0006] The present invention provides a light irradiation device which can effectively improve the stability of light irradiation treatment.

[0007] A light irradiation device according to one aspect of the present invention includes: a processing chamber for accommodating a substrate; a radiation source chamber for accommodating a radiation source of energy rays; a partition wall separating the processing chamber from the radiation source chamber; a plurality of window portions, which are arranged on the partition wall and can transmit energy rays emitted from the radiation source to the substrate in the processing chamber; and a plurality of gas release portions, which are respectively arranged around the plurality of window portions in the processing chamber and release inactive gas along the surfaces of the plurality of window portions.

[0008] According to the present invention, it is possible to provide a light irradiation device that can effectively improve the stability of light irradiation processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a schematic diagram illustrating a schematic configuration of a light irradiation device.

[0010] Figure 2 It is a schematic diagram illustrating the schematic structure of the gas release section.

[0011] Figure 3 It is a schematic diagram showing a modified example of the light irradiation device.

[0012] Figure 4 It is a schematic diagram showing a modified example of the gas release portion.

[0013] Figure 5 It is a plan view showing a modified example of the gas release portion.

[0014] Figure 6 It is a schematic diagram illustrating a schematic configuration of an exhaust guide.

[0015] Figure 7 is a block diagram illustrating the functional structure of the controller.

[0016] Figure 8 This is a block diagram illustrating the hardware configuration of the controller.

[0017] Fig. 9 This is a flowchart illustrating the light irradiation step.

[0018] Fig.10 This is a graph illustrating the influence when sublimates adhere to the window portion.

[0019] Description of Reference Numerals

[0020] 1: light irradiation device, 11: processing chamber, 12: radiation source chamber, 13: partition wall, 15: window portion, 15a: center of window portion 15, 16: gas flow path, 30: radiation source, 70: processing gas supply portion (gas supply portion), 82: buffer space (first buffer space), 83: gap, 84: ventilation hole, 85: buffer space (second buffer space), 90: exhaust portion. DETAILED DESCRIPTION

[0021] Hereinafter, the embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and repeated descriptions are omitted.

[0022]

Light irradiation device

[0023] (Overall structure of the device)

[0024] The light irradiation device 1 of the present embodiment is a device for irradiating energy rays to a photosensitive coating or a photosensitive pattern formed on the surface of a substrate. As a specific example of a substrate, a semiconductor wafer can be cited. As a specific example of a photosensitive coating, a resist film can be cited. As a specific example of a photosensitive pattern, a resist pattern formed by developing a resist film can be cited.

[0025] For example, the light irradiation device 1 irradiates energy rays for improving the roughness of the surface of the resist film, the roughness of the surface of the resist pattern, or the roughness of the side of the resist pattern. Hereinafter, the resist film and the resist pattern are collectively referred to as "resist". In addition, the surface of the resist film, the surface of the resist pattern, and the side of the resist pattern are collectively referred to as "resist surface". As long as the resist pattern can react with the generation of sublimates, there is no particular limitation on the amplitude and wavelength of the energy rays. As a specific example of energy rays, vacuum ultraviolet light (VUV light: Vacuum Ultra Violet Light) can be cited.

[0026] like Figure 1As shown, the light irradiation device 1 includes a housing 10, a shutter 20, a plurality of radiation sources 30, a shutter 40, a rotation holding portion 50, a processing gas supply portion 70, a standby gas supply portion 60, a plurality of gas release portions 80 and an exhaust portion 90.

[0027] The housing 10 is a container for isolating its internal space from the external space. The interior of the housing 10 is divided into upper and lower parts by a horizontal partition wall 13, and the processing chamber 11 is located below the partition wall 13, and the line source chamber 12 is located above the partition wall 13. That is, the light irradiation device 1 includes a partition wall 13 that separates the processing chamber 11 from the line source chamber 12. The processing chamber 11 accommodates the wafer W to be processed. An access opening 14 for carrying the wafer W into or out of the processing chamber 11 is formed on the peripheral wall of the housing 10. The gate 20 uses, for example, an electric motor or a cylinder as a power source to open and close the access opening 14.

[0028] The source chamber 12 accommodates a plurality of radiation sources 30. The radiation source 30 has a built-in energy ray generation source, and emits the energy ray generated by the generation source in one direction. For example, the radiation source 30 is a deuterium lamp that emits vacuum ultraviolet rays. The radiation source 30 can emit energy rays including both vacuum ultraviolet rays and near ultraviolet rays having a wavelength greater than that of vacuum ultraviolet rays. Vacuum ultraviolet rays are light with a wavelength of 10 to 200 nm, and near ultraviolet rays are light with a wavelength of 300 to 400 nm. For example, the radiation source 30 emits energy rays having a continuous spectral distribution in the range of 115 to 400 nm. The peak of the spectral distribution is, for example, at 150 to 160 nm.

[0029] The plurality of radiation sources 30 are dispersed in the horizontal direction and fixed to the top of the housing 10 with the emission portions 31 of the respective energy rays facing the partition wall 13 (e.g., facing vertically downward). As described above, storing the radiation source 30 means storing at least the emission portion 31 of the radiation source 30, and is not limited to storing the entire radiation source 30.

[0030] In the partition wall 13, a plurality of windows 15 are respectively provided at a plurality of locations facing the emission portions 31 of the plurality of radiation sources 30 so as to transmit the energy rays emitted from the radiation sources 30. Thus, the energy rays emitted from the radiation sources 30 can be irradiated to the wafer W in the processing chamber 11. That is, the light irradiation device 1 has a plurality of windows 15 provided in the partition wall 13 so as to transmit the energy rays emitted from the plurality of radiation sources 30 to the wafer W in the processing chamber 11.

[0031] When the resist on the surface Wa of the wafer W is irradiated with energy rays, a part of the chemical bonds in the resist surface layer are cut. As a result, the surface free energy of the resist is reduced, and the internal stress of the resist surface layer is reduced, so the fluidity of the resist surface layer becomes higher. Therefore, the surface roughness of the resist can be improved.

[0032] The shutter 40 can be switched to an open state in which the light emitted from the radiation source 30 is irradiated to the wafer W, and a closed state in which the light emitted from the radiation source 30 is not irradiated to the wafer W when the plurality of radiation sources 30 are turned on. The shutter 40 includes, for example, a light shielding sheet 41 and an opening and closing drive unit 42. The light shielding sheet 41 is arranged in parallel with the partition wall 13 in the line source chamber 12. The light shielding sheet 41 has a plurality of light-transmitting openings 43 through which the energy rays emitted from the plurality of radiation sources 30 are respectively transmitted.

[0033] The opening and closing driving unit 42 moves the light shielding sheet 41 to shift the position of the light-transmitting opening 43, thereby switching the above-mentioned open state and the above-mentioned closed state. In the open state, the light-transmitting opening 43 is located below the respective radiation source 30. Thus, the light emitted from the radiation source 30 is irradiated to the wafer W in the processing chamber 11 through the light-transmitting opening 43 and the window 15. In the closed state, the portion without the light-transmitting opening 43 is located below the respective radiation source 30. Thus, the light emitted from the radiation source 30 is blocked in the line source chamber 12.

[0034] The rotation holding part 50 holds and rotates the wafer W stored in the processing chamber 11. For example, the rotation holding part 50 includes a holding part 51 and a rotation driving part 52. The holding part 51 supports the wafer W horizontally arranged in the processing chamber 11 and holds the wafer W by vacuum adsorption or the like. The rotation driving part 52 rotates the holding part 51 around a vertical axis. As the holding part 51 rotates, the wafer W held by the holding part 51 also rotates.

[0035] The processing gas supply unit 70 (gas supply unit) supplies an inert gas (hereinafter referred to as "processing gas") into the processing chamber 11 and the source chamber 12, at least during the period when the wafer W in the processing chamber 11 is irradiated with energy rays. Specific examples of the processing gas include argon, helium, xenon, and nitrogen. Supplying the processing gas to the processing chamber 11 and the source chamber 12 includes supplying the processing gas to the source chamber 12 via the processing chamber 11 and supplying the processing gas to the processing chamber 11 via the source chamber 12. By supplying the processing gas into the processing chamber 11, deterioration of the resist caused by chemical reaction with the atmosphere in the processing chamber 11 can be suppressed. By supplying the processing gas into the source chamber 12, generation of ozone in the source chamber 12 can be suppressed.

[0036] For example, the processing gas supply unit 70 includes a gas source 71 and a valve 72. The gas source 71 delivers the processing gas to the processing chamber 11 and the line source chamber 12. The valve 72 operates according to a control signal to open and close the gas supply path from the gas source 71 to the processing chamber 11 and the line source chamber 12. As specific examples of the valve 72, a solenoid valve and a pneumatic valve can be cited.

[0037] The standby gas supply unit 60 supplies an inert gas (hereinafter referred to as "standby gas") into the source chamber 12 at least while the gate 20 is open. Specific examples of the standby gas include nitrogen and the like. By supplying the standby gas, the generation of ozone in the source chamber 12 can be suppressed even while the gate 20 is open.

[0038] For example, the standby gas supply unit 60 includes a gas source 61 and a valve 62. The gas source 61 supplies the standby gas to the line source chamber 12. The valve 62 operates according to a control signal to open and close the gas supply path from the gas source 61 to the line source chamber 12. Specific examples of the valve 62 include a solenoid valve and a pneumatic valve.

[0039] A plurality of gas release parts 80 are respectively provided around a plurality of windows 15 in the processing chamber 11, and release inert gas along the surface of the window 15. For example, the gas release part 80 releases the processing gas supplied by the processing gas supply part 70 along the surface of the window 15. For example, the gas release part 80 is provided in a manner surrounding the window 15, and releases the processing gas in a manner that the processing gas is released from the outer periphery of the window 15 toward the center 15a.

[0040] The exhaust section 90 guides the processing gas gathered from the gas release section 80 to the center 15a of the window section 15 to the wafer W side (below) in the light irradiation device 1, and exhausts it to the outside of the processing chamber 11. For example, the exhaust section 90 includes an exhaust pump 91 and a valve 92. The exhaust pump 91 is, for example, an electric vacuum pump, and sucks the gas from the lower part of the processing chamber 11. The valve 92 opens and closes the exhaust path from the processing chamber 11 to the exhaust pump 91.

[0041] (Gas release section)

[0042] Next, the structure of the gas release portion 80 is described in detail. Figure 2 As described above, the gas release portion 80 includes a surrounding portion 81, a buffer space 82, a slit 83, and a vent hole 84. The surrounding portion 81 is provided on the partition wall 13 in a manner of surrounding the surface of the window portion 15. The surrounding portion 81 is an annular portion surrounding the surface of the window portion 15, and protrudes toward the wafer W side (downward) than the surface of the window portion 15.

[0043] The buffer space 82 is provided in the surrounding portion 81 in such a manner as to surround the surface of the window portion 15. The buffer space 82 only needs to surround the surface of the window portion 15 at least partially, so it is not necessary to be provided in a ring shape throughout the entire circumference. The slit 83 has an opening on the inner circumferential surface of the surrounding portion 81 along the outer circumference of the window portion 15 in such a manner as to guide the inert gas from the buffer space 82 to the center 15a of the window portion 15. The vent hole 84 is provided in the partition wall 13 in such a manner as to introduce the inert gas from the line source chamber 12 into the buffer space 82. That is, the vent hole 84 penetrates the partition wall 13 between the buffer space 82 and the line source chamber 12.

[0044] As an example, the partition wall 13 includes a wall body 100 and a plurality of window units 110. The wall body 100 is horizontally extended to divide the inside of the housing 10 into a processing chamber 11 and a source chamber 12. The wall body 100 has openings 101 at a plurality of locations corresponding to the plurality of window portions 15. The plurality of window units 110 are respectively embedded in the plurality of openings 101 to form the window portions 15 and the gas release portion 80.

[0045] The window unit 110 includes a light-transmitting disc 111 and a disc holder 120. The light-transmitting disc 111 is a disc that transmits energy rays. For example, the light-transmitting disc 111 is made of inorganic glass or organic glass. As an example, the light-transmitting disc 111 is made of magnesium fluoride glass.

[0046] The sheet holder 120 holds the light-transmitting disk 111 in the opening 101. The sheet holder 120 has a frame portion 121 and a sheet support portion 122. The frame portion 121 is an annular portion that surrounds the outer peripheral surface of the light-transmitting disk 111 all around. The sheet support portion 122 is an annular portion connected to the bottom of the frame portion 121. The inner peripheral surface of the sheet support portion 122 protrudes inwardly than the inner peripheral surface of the frame portion 121. The portion of the sheet support portion 122 that protrudes inwardly than the inner peripheral surface of the frame portion 121 supports the outer peripheral portion of the light-transmitting disk 111 from below. With this configuration, a window portion 15 is formed on the inner side of the inner peripheral surface of the sheet support portion 122, and the sheet support portion 122 becomes an enclosing portion 81 that surrounds the surface of the window portion 15.

[0047] An annular space 123 is formed throughout the entire circumference of the sheet support portion 122. In the sheet support portion 122, a wall portion 124 located on the inner circumference side of the annular space 123 is slightly separated from the lower surface of the light-transmitting disc 111. Thus, a gap 126 formed between the light-transmitting disc 111 and the wall portion 124 communicates with the annular space 123 throughout the entire circumference through a cylindrical slit 127 along the outer circumference of the wall portion 124.

[0048] The frame 121 is provided with a vent hole 125 penetrating at least one position between the line source chamber 12 and the annular space 123. The vent holes 125 are formed at a plurality of positions surrounding the light-transmitting disc 111. In this configuration, the annular space 123 corresponds to the buffer space 82, the gap 126 corresponds to the slit 83, and the vent holes 125 correspond to the vent holes 84.

[0049] According to the above structure, the processing gas released to the gas release part 80 can be supplied from the radiation source chamber 12. Therefore, the processing gas supply part 70 is connected to the radiation source chamber 12 (see Figure 1 ).

[0050] (Modification of the partition wall and the gas release portion)

[0051] The above example illustrates a structure in which the processing gas is supplied from the source chamber 12 to the buffer space 82, but the present invention is not limited thereto. Figure 3 to Figure 5 As shown, the light irradiation device 1 can be configured to supply the processing gas to the buffer space 82 using the gas flow path 16 provided along the partition wall 13. The gas flow path 16 is formed in the partition wall 13. The partition wall 13 can be formed with a vent hole 17 that penetrates at least one portion between the gas flow path 16 and the source chamber 12. In this configuration, the gas release portion 80 does not have the vent hole 84.

[0052] The gas release portion 80 may be configured to supply the processing gas to the buffer space 82 via a buffer space 85 (second buffer space) formed in the surrounding portion 81 in a manner that further surrounds the buffer space 82 (first buffer space). In this case, the gas flow path 16 is connected to the buffer space 85 at least at one location, and the buffer space 82 and the buffer space 85 are connected to each other at multiple locations of the surrounding window portion 15. The number of connection locations between the gas flow path 16 and the buffer space 85 may be less than the number of connection locations between the buffer space 82 and the buffer space 85.

[0053] As an example, the partition wall 13 includes a first partition wall 210 and a second partition wall 220 that overlaps on the side of the processing chamber 11 relative to the plurality of first partition walls 210. The first partition wall 210 and the second partition wall 220 are in contact with each other. The first partition wall 210 has an opening 211, a sheet support portion 212, and a light-transmitting disc 213 at a plurality of locations corresponding to each of the plurality of window portions 15. The sheet support portion 212 protrudes inwardly from the lower portion of the inner circumferential surface of the opening 211 over the entire circumference. The light-transmitting disc 213 is a disc that can transmit energy rays in the same manner as the light-transmitting disc 111 described above. The light-transmitting disc 213 is embedded in the opening 211 and supported by the sheet support portion 212.

[0054] The second partition wall 220 has a plurality of openings 221 corresponding to the plurality of openings 211. Figure 4 and Figure 5 As described above, the first annular groove 222 and the second annular groove 224 are formed around each opening 221 in the upper surface of the second partition wall 220. The first annular groove 222 surrounds the opening 221 over the entire circumference, and the second annular groove 224 further surrounds the first annular groove 222 over the entire circumference.

[0055] The first annular groove 222 and the second annular groove 224 are connected at a plurality of locations (four locations in the figure) surrounding the opening 221. The wall portion 223 on the inner peripheral side of the first annular groove 222 is slightly away from the lower surface of the first partition wall 210. At least one (for example, two) linear grooves 225 passing through a plurality of second annular grooves 224 are also formed on the upper surface of the second partition wall 220. Each second annular groove 224 is connected to any one of the linear grooves 225 at one location. A linear groove 226 connecting the linear grooves 225 may also be formed on the upper surface of the second partition wall 220. In the first partition wall 210, a vent hole 214 is formed for each linear groove 225, penetrating at least one location between the inside of the linear groove 225 and the source chamber 12.

[0056] In this configuration, the interior of the first annular groove 222 corresponds to the buffer space 82, and the interior of the second annular groove 224 corresponds to the buffer space 85. In addition, the gap formed between the wall portion 223 and the first partition wall 210 corresponds to the slit 83. In addition, the interior of the linear groove 225 corresponds to the gas flow path 16, and the vent hole 214 corresponds to the vent hole 17.

[0057] According to the above structure, both the processing gas to be released from the gas release part 80 into the processing chamber 11 and the processing gas to be supplied into the source chamber 12 can be supplied from the gas flow path 16. Therefore, the above-mentioned processing gas supply part 70 is connected to the gas flow path 16 (refer to Figure 3 ).

[0058] (Exhaust guide)

[0059] For example Figure 6 As described above, the exhaust section 90 further includes an exhaust guide section 93 for guiding gas from multiple locations surrounding the arrangement area of ​​the wafer W in the processing chamber 11 to the exhaust pump 91. For example, the exhaust guide section 93 includes two exhaust pipes 94 sandwiching the arrangement area of ​​the wafer W and a connecting pipe 95 connecting the ends of the two exhaust pipes 94. A plurality of exhaust ports 96 arranged in the longitudinal direction of the exhaust pipe 94 are formed. Each exhaust port 96 has an opening, for example, on the side of the arrangement area of ​​the wafer W. The connecting pipe 95 is connected to the exhaust pump 91 via a valve 92.

[0060] According to the exhaust guide 93, gas can be guided from multiple locations where the exhaust ports 96 are formed to the exhaust pump 91. As a result, gas can be sucked out over a wide range of the lower portion of the processing chamber 11, so that the processing gas released from the multiple gas release portions 80 can be more reliably guided to the wafer W side (below).

[0061] (Controller)

[0062] The light irradiation device 1 may further include a controller 900. The controller 900 performs the following control, namely: controlling the shutter 40 so that the energy ray passes through the plurality of windows 15 and is irradiated from the ray source 30 onto the wafer W in the processing chamber 11; and controlling the processing gas supply unit 70 and the exhaust unit 90 so that at least during the period when the energy ray is irradiated onto the wafer W, the inactive gas is released from the plurality of gas release units 80 along the surfaces of the plurality of windows 15.

[0063] Figure 7 900 is a block diagram illustrating a structure functionally equivalent to the controller 900. Figure 7 As described above, the controller 900 includes an irradiation control unit 911, a gas supply control unit 912, an exhaust control unit 913, a rotation control unit 914, and an entry and exit control unit 915 as a functional structure (hereinafter referred to as a "functional module").

[0064] The irradiation control unit 911 turns on the radiation source 30 when the light irradiation device 1 is started, and turns off the radiation source 30 when the light irradiation device 1 is stopped. The irradiation control unit 911 switches the radiation source 30 between the on state and the closed state by the shutter 40 while the radiation source 30 is turned on.

[0065] The gas supply control unit 912 supplies standby gas into the source chamber 12 through the standby gas supply unit 60 at least during the period when the gate 20 is open, and supplies processing gas into the source chamber 12 and the processing chamber 11 through the processing gas supply unit 70 at least during the period when the energy ray is irradiated to the wafer W. The exhaust control unit 913 exhausts the gas in the lower part of the processing chamber 11 through the exhaust unit 90 at least during the period when the energy ray is irradiated to the wafer W.

[0066] The rotation control unit 914 rotates the wafer W through the rotation drive unit 52 at least during the period of irradiating the wafer W with energy rays. The inlet and outlet control unit 915 opens and closes the gate 20 as the wafer W is carried in and out, holds the carried-in wafer W on the holding unit 51, and releases the holding of the wafer W to be carried out by the holding unit 51.

[0067] Figure 8 900 is a block diagram illustrating the hardware configuration of the controller 900. The controller 900 is composed of one or more control computers. Figure 8As described above, the controller 900 has a circuit 920. The circuit 920 includes at least one processor 921, a memory 922, a storage device 923, and an input / output port 924. The storage device 923 has a computer-readable storage medium such as a hard disk. The storage device 923 stores a program that enables the controller 900 to perform the following control, namely: control the shutter 40 so that the energy ray passes through the plurality of windows 15 and is irradiated from the ray source 30 onto the wafer W in the processing chamber 11; control the processing gas supply unit 70 and the exhaust unit 90 so that at least during the period when the energy ray is irradiated to the wafer W, the inactive gas is released from the plurality of gas release units 80 along the surface of the plurality of windows 15.

[0068] The memory 922 temporarily stores the program read from the storage medium of the storage device 923 and the calculation result of the processor 921. The processor 921 cooperates with the memory 922 to execute the above program and constitute the above functional modules. The input / output port 924 inputs and outputs electrical signals between the gate 20, the radiation source 30, the shutter 40, the holding part 51, the rotation driving part 52, the standby gas supply part 60, the processing gas supply part 70 and the exhaust part 90 according to the instruction from the processor 921.

[0069] In addition, the hardware configuration of the controller 900 is not limited to the configuration of each functional module by a program. For example, at least a part of the functional modules of the controller 900 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) integrating the dedicated logic circuit.

[0070]

Light irradiation process

[0071] Next, as an example of a light irradiation method, a light irradiation process performed by the light irradiation device 1 is illustrated. The process includes: a step of irradiating energy rays from the radiation source 30 to the wafer W in the processing chamber 11 through a plurality of windows 15 provided on a partition wall 13 that separates the processing chamber 11 that accommodates the wafer W from the radiation source chamber 12 that accommodates the radiation source 30 of energy rays; and a step of releasing inert gas along the surfaces of the plurality of windows 15 from a plurality of gas release portions 80 provided around the plurality of windows 15 in the processing chamber 11 at least while the wafer W is irradiated with the energy rays.

[0072] Fig. 9 The process shown in the figure starts with the gate 20 opening the access opening 14 of the housing 10. Fig. 9As described above, the controller 900 first executes steps S01 and S02. In step S01, the gas supply control unit 912 starts supplying the standby gas from the standby gas supply unit 60 to the radiation source chamber 12 while the supply of the processing gas from the processing gas supply unit 70 is stopped. In step S02, the irradiation control unit 911 turns on all the radiation sources 30.

[0073] The controller 900 then sequentially executes steps S03, S04, S05, S06, S07, and S08. In step S03, a wafer W is introduced into the processing chamber 11, and the access control unit 915 waits until the wafer W is disposed on the holding unit 51. In step S04, the access control unit 915 holds the wafer W on the holding unit 51. In step S05, the access control unit 915 closes the access opening 14 through the gate 20. In step S06, the exhaust control unit 913 causes the exhaust unit 90 to start discharging gas from the lower portion of the processing chamber 11. In step S07, the gas supply control unit 912 causes the processing gas supply unit 70 to start supplying processing gas to the source chamber 12 and the processing chamber 11. Thus, the release of processing gas along the surface of the window 15 starts in each gas release unit 80. In step S08 , the gas supply control unit 912 causes the standby gas supply unit 60 to supply the standby gas into the radiation chamber 12 .

[0074] The controller 900 then sequentially executes steps S11, S12, S13, S14, S15, S16, S17, S18, and S19. In step S11, the irradiation control unit 911 switches the shutter 40 from the closed state to the open state. For example, the irradiation control unit 911 drives the light shielding sheet 41 through the opening and closing drive unit 42 so that the light-transmitting opening 43 is located below the ray source 30. Thus, the irradiation of the wafer W in the processing chamber 11 with energy rays begins. In step S12, the rotation control unit 914 rotates the wafer W in the processing chamber 11 at a predetermined rotation speed through the rotation drive unit 52.

[0075] In step S13, the irradiation control unit 911 switches the shutter 40 from the open state to the closed state. For example, the irradiation control unit 911 drives the light shielding plate 41 through the opening and closing driving unit 42 so that the position without the light-transmitting opening 43 is located below the ray source 30. Thus, the irradiation of the energy ray to the wafer W in the processing chamber 11 is stopped.

[0076] In step S14, the gas supply control unit 912 causes the standby gas supply unit 60 to start supplying the standby gas into the radiation chamber 12. In step S15, the gas supply control unit 912 causes the processing gas supply unit 70 to stop supplying the processing gas into the radiation chamber 12 and the processing chamber 11. In step S16, the exhaust control unit 913 causes the exhaust unit 90 to stop exhausting the gas from the lower portion of the processing chamber 11.

[0077] In step S17, the access control unit 915 opens the access opening 14 through the shutter 20. In step S18, the access control unit 915 causes the holding unit 51 to release the wafer W from being held. In step S19, the access control unit 915 waits until the wafer W is sent out of the processing chamber 11. Thereafter, the controller 900 returns the process to step S03. Thereafter, the replacement of the wafer W and the light irradiation are repeatedly performed while the radiation source 30 is continuously lit.

[0078] [Effects of this embodiment]

[0079] As described above, the light irradiation device 1 includes: a processing chamber 11 for accommodating a chip W; a source chamber 12 for accommodating a radiation source 30 for energy rays; a partition wall 13 separating the processing chamber 11 from the source chamber 12; a plurality of window portions 15, which are arranged on the partition wall 13 and can transmit energy rays emitted from the radiation source 30 to the chip W in the processing chamber 11; and a plurality of gas release portions 80, which are respectively arranged around the plurality of window portions in the processing chamber 11 and release inactive gas along the surfaces of the plurality of window portions 15.

[0080] According to the light irradiation device 1, the inert gas released from the gas release portion 80 provided around the window portion 15 can forcibly form an airflow along the surface of the window portion 15. Therefore, it is possible to suppress the attachment of sublimates and the like generated by the irradiation of energy rays to the window portion 15. In addition, it is possible to expect the effect of removing the attached sublimates and the like. Therefore, the stability of the light irradiation treatment can be effectively improved.

[0081] Fig.10 : is a graph illustrating the influence when the sublimates adhere to the window portion 15. This graph shows the improvement effect of the roughness as a ratio. Fig.10 The left graph is a graph before the sublimation product is attached to the window 15. Fig.10 The right graph is a graph after the sublimation product is attached to the window portion 15. Fig.10 As can be seen from the graph, when the sublimates adhere to the window 15, the improvement effect of the roughness is greatly reduced. When the sublimates adhere, not only the amount of energy rays irradiated to the wafer W is reduced, but also the spectral distribution of the energy rays irradiated to the wafer W is changed. Therefore, it is considered that the improvement effect of the roughness is greatly reduced. As described above, according to the light irradiation device 1, it is possible to suppress the adhesion of the sublimates to the window 15, so that Fig.10 The improvement effect of roughness is shown to be reduced.

[0082] The plurality of gas release portions 80 may be respectively provided in a manner of surrounding any one of the plurality of window portions 15, and the inert gas may be released from the periphery of the window portion 15 toward the center 15a. In this case, the inert gas is gathered at the center 15a of the window portion 15, thereby further forming a gas flow that leaves from the surface of the window portion 15. Therefore, the attachment of sublimates and the like to the window portion 15 can be further suppressed.

[0083] The plurality of gas release portions 80 may respectively include: a surrounding portion 81 provided on the partition wall 13 so as to surround the surface of the window portion 15; a buffer space 82 provided in the surrounding portion 81 so as to surround the surface of the window portion 15; and a slit 83 having an opening on the inner peripheral surface of the surrounding portion 81 along the outer periphery of the surface of the window portion 15 so as to guide the inert gas from the buffer space 82 to the center 15a of the window portion 15. In this case, by temporarily storing the inert gas in the buffer space 82, the deviation of the release amount of the inert gas in the circumferential direction of the window portion 15 can be suppressed. Therefore, the attachment of sublimates and the like to the window portion 15 can be more reliably suppressed.

[0084] The light irradiation device 1 may further include a gas supply unit 70 for supplying an inert gas to the radiation source chamber 12, and each of the plurality of gas release units 80 further includes a vent hole 84 provided in the partition wall 13 to introduce the inert gas from the radiation source chamber 12 into the buffer space 82. In this case, the radiation source chamber 12 is used as a gas flow path for the inert gas, and the device configuration can be simplified.

[0085] The light irradiation device 1 may further include: at least one gas flow path 16 provided along the partition wall 13 and supplying an inert gas to the buffer space 82 of the plurality of gas release portions 80; and a gas supply portion 70 supplying an inert gas to the gas flow path 16. In this case, by providing a dedicated gas flow path 16 provided along the partition wall 13, it is possible to suppress the inflow of gas from the inside of the line source chamber 12 into the inside of the processing chamber 11. Thus, it is possible to suppress the entry of impurities from the inside of the line source chamber 12 into the inside of the processing chamber 11, so that it is easy to arrange movable parts such as the shutter 40 in the line source chamber 12.

[0086] The plurality of gas release portions 80 may respectively include: a buffer space 82; and a buffer space 85 formed in the surrounding portion in a manner that further surrounds the buffer space 82, the gas flow path 16 is connected to the buffer space 85 at least at one location, and the buffer space 82 and the buffer space 85 are connected to each other at multiple locations on the surface surrounding the window portion 15. In this case, the uneven pressure in the circumferential direction of the window portion 15 can be reduced by the buffer space 85. In addition, the inert gas flows from the buffer space 85 to the buffer space 82 from multiple locations surrounding the window portion 15, and the uneven pressure in the circumferential direction of the window portion 15 can be further reduced in the buffer space 82. As a result, the uneven release amount of the inert gas in the circumferential direction of the window portion 15 can be suppressed, so that the attachment of sublimates and the like to the window portion 15 can be more reliably suppressed.

[0087] The light irradiation device 1 may further include an exhaust unit 90 that guides the inactive gas collected from each of the plurality of gas release units 80 to the center 15a of the window 15 to the wafer W side in the processing chamber 11, and exhausts the inactive gas to the outside of the processing chamber 11. In this case, the formation of the gas flow leaving from the surface of the window 15 can be further promoted, so that the attachment of sublimates and the like to the window 15 can be further suppressed.

[0088] In addition, in the process using vacuum ultraviolet light, the supply of inert gas and the decompression in the process chamber are rarely required. Therefore, the supply source of the inert gas that was originally required is used to supply the inert gas to the gas release part, and the decompression source that was originally required is used to exhaust from the exhaust part, so that the device can be rationally and easily constructed.

[0089] The above describes the embodiments, but the present invention is not limited to the above embodiments, and various changes can be made without departing from the main purpose. The substrate to be processed is not limited to a semiconductor substrate, and can be, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc.

Claims

1. A light irradiation device, characterized in that: include: a processing chamber for receiving substrates; A line source room for storing a ray source of energy rays; a partition wall separating the processing chamber from the line source chamber; a plurality of windows disposed on the partition wall so as to face different locations on the substrate in the processing chamber and capable of transmitting energy rays emitted from the ray source to the substrate; A plurality of gas release portions, which are respectively arranged around the plurality of window portions in the processing chamber and release inactive gas along surfaces of the plurality of window portions; and a gas flow path for supplying the inert gas to the plurality of gas release portions, The plurality of gas release parts respectively include: The surrounding portion is provided on the partition wall so as to surround a surface of any one of the plurality of window portions; a first buffer space provided in the surrounding portion so as to surround a surface of the window portion; and a second buffer space formed in the surrounding portion so as to surround the first buffer space and connected to the gas flow path at least at one location, The first buffer space and the second buffer space are connected to each other at a plurality of locations on a surface surrounding the window portion. The gas release portion discharges the inert gas so that the inert gas is gathered from the first buffer space toward the center of the window portion.

2. The light irradiation device according to claim 1, characterized in that: It also includes a gas supply unit for supplying the inert gas to the radiation source chamber. Each of the plurality of gas release portions further includes a vent hole provided in the partition wall so as to introduce the inert gas from the radiation source chamber into the second buffer space.

3. The light irradiation device according to claim 1, wherein include: at least one gas flow path provided along the partition wall and supplying the inert gas to the second buffer space of the plurality of gas release portions; and A gas supply unit supplies the inert gas to the gas flow path.

4. The light irradiation device according to any one of claims 1 to 3, characterized in that: The exhaust portion is further included, which guides the inert gas collected from each of the plurality of gas release portions to the center of the window portion to the substrate side in the processing chamber and exhausts the inert gas to the outside of the processing chamber.

5. A light irradiation method, characterized in that: include: The step of irradiating the substrate in the processing chamber with energy rays from the radiation source through a plurality of windows provided on a partition wall separating a processing chamber for storing the substrate and a radiation source chamber for storing the energy rays; and The step of supplying gas to a plurality of gas release portions around the plurality of window portions respectively arranged in the processing chamber through a gas flow path at least during the period when the substrate is irradiated with the energy ray, and releasing inert gas from the plurality of gas release portions along the surfaces of the plurality of window portions respectively, The plurality of gas release parts respectively include: The surrounding portion is provided on the partition wall so as to surround a surface of any one of the plurality of window portions; a first buffer space provided in the surrounding portion so as to surround a surface of the window portion; and a second buffer space formed in the surrounding portion so as to surround the first buffer space and connected to the gas flow path at least at one location, The first buffer space and the second buffer space are connected to each other at a plurality of locations on a surface surrounding the window portion. The gas is supplied to the second buffer space of each of the plurality of gas release portions through the gas flow path, and the inert gas is led out so that the inert gas is gathered from the first buffer space toward the center of the window portion.

6. A computer-readable storage medium, characterized in that: A program for causing the device to execute the light irradiation method according to claim 5 is stored.

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