Communication wave absorbing structure and communication equipment

Abstract

The present invention provides a communication wave absorbing structure, including a first plate and a second plate, the first plate and the second plate are arranged in a front-to-back correspondence and the axis lines coincide with each other; the first plate includes a first dielectric base layer, and a first annular metal layer coincident with the center of the first dielectric base layer; the outer edge of the first dielectric base layer and the outer ring of the first annular metal layer are the same central symmetrical figure, and the size of the first dielectric base layer is relatively large; the first annular metal layer is attached to one side of the first dielectric base layer, which is composed of an even number of first spiral wire groups arranged in sequence at equal intervals, each first spiral wire group includes a pair of spiral wires and a metal sheet of a preset length, and a metal diaphragm made of lossy metal material is embedded in the metal sheet; the second plate is similar to the first plate in structure, but does not have a metal diaphragm. The communication wave absorbing structure realizes a dual absorption peak working mode while ensuring a wider wave transmission bandwidth, and the isolation of the absorption peaks is large. The present invention also provides a communication device.

Description

Technical Field

[0001] The present invention belongs to the field of communication technology, and more specifically, relates to a communication wave absorbing structure and communication equipment. Background Art

[0002] With the continuous development of the information age, the demand for high-frequency information is becoming increasingly urgent. As far as the microwave frequency band is concerned, in order to meet the larger communication bandwidth, people are constantly trying to expand the network communication frequency to high frequency. At the same time, the highly developed information-based commercial communication also forces the electromagnetic response to have specific frequency selection characteristics during microwave communication. A frequency-selective electromagnetic functional material with both wave absorption and wave transmission characteristics has attracted widespread attention in the industry, and the urgent market demand has also accelerated the continuous development of this technology.

[0003] Electromagnetic protection materials with a single wave-absorbing characteristic, such as carbon-based wave-absorbing sponges or wave-absorbing foam materials, wave-absorbing honeycomb materials with aramid substrate carriers, and even the very popular wave-absorbing metamaterials, often do not preset a dedicated communication frequency band, but usually adopt a one-size-fits-all approach to achieve full broadband absorption. Such a design method usually has its application shortcomings and cannot cater to more flexible and diverse communication occasions. At the same time, the existing wave-absorbing and wave-transmitting joint design technology also has the problem of a narrow working bandwidth. Summary of the invention

[0004] The object of the present invention is to provide a communication wave absorbing structure to solve the problem of narrow working bandwidth of existing wave absorbing and wave transmitting structures.

[0005] To achieve the above object, the technical solution adopted by the present invention is: to provide a communication wave absorbing structure, including a first plate and a second plate, wherein the first plate and the second plate are arranged in a front-to-back correspondence and their axis lines coincide with each other;

[0006] The first plate includes a first dielectric base layer, and a first annular metal layer coinciding with the center of the first dielectric base layer; the outer edge of the first dielectric base layer and the outer ring of the first annular metal layer are the same central symmetrical figure, and the size of the first dielectric base layer is larger than the first annular metal layer; the first annular metal layer is attached to one side of the first dielectric base layer; the first annular metal layer is composed of an even number of first spiral wire groups arranged in sequence at equal intervals, each of the first spiral wire groups includes a pair of spiral wires and a metal sheet of a preset length, wherein a metal diaphragm made of a lossy metal material is embedded in the metal sheet of each first spiral wire group;

[0007] The second plate includes a second dielectric base layer and a second annular metal layer coinciding with the center of the second dielectric base layer; the outer edge of the second dielectric base layer and the outer ring of the second annular metal layer are both the same central symmetrical figure, and the size of the second dielectric base layer is larger than the second annular metal layer; the second annular metal layer is attached to one side of the second dielectric base layer; the second annular metal layer is composed of an even number of second spiral wire groups arranged in sequence at equal intervals, and each of the second spiral wire groups includes a pair of spiral wires and a metal sheet of a preset length.

[0008] Furthermore, the outer edge of the first dielectric base layer and the outer ring of the first annular metal layer, the outer edge of the second dielectric base layer and the outer ring of the second annular metal layer are all square, hexagonal or circular.

[0009] Furthermore, the outer edge of the first dielectric base layer and the outer ring of the first annular metal layer, and the outer edge of the second dielectric base layer and the outer ring of the second annular metal layer are all square;

[0010] The first annular metal layer is composed of four first spiral wire groups arranged in sequence at equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square first annular metal layer;

[0011] The second annular metal layer is composed of four second spiral wire groups arranged in sequence with equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square second annular metal layer.

[0012] Furthermore, the side lengths of the first annular metal layer and the second annular metal layer are 9 to 13 mm.

[0013] Furthermore, the ring widths of the first annular metal layer and the second annular metal layer are 0.65-0.8 mm.

[0014] Furthermore, the center distance between each pair of the spiral lines is 2.3-4 mm.

[0015] Furthermore, the lossy metal material is an ITO film or an IZO film.

[0016] Furthermore, the sheet resistance of the metal film is 150-400 ohms.

[0017] Furthermore, the distance between the first plate and the second plate is 8-12 mm.

[0018] The present invention also provides a communication device, comprising the above-mentioned communication wave absorbing structure.

[0019] The beneficial effect of a communication absorbing structure provided by the present invention is that, compared with the prior art, the present invention can realize a dual absorption peak working mode while ensuring a wider wave transmission bandwidth, and the isolation of the absorption peaks is large, spanning the entire C-band and X-band, and is suitable for a variety of flexible communication occasions. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. It is obvious that the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0021] Figure 1 A schematic diagram of the three-dimensional structure of a communication absorbing structure provided in an embodiment of the present invention;

[0022] Figure 2 A side schematic diagram of a communication wave absorbing structure provided by an embodiment of the present invention;

[0023] Figure 3 A schematic diagram of the front and back structures of a first plate provided in an embodiment of the present invention;

[0024] Figure 4 A schematic diagram of the front and back structures of the second plate provided in an embodiment of the present invention;

[0025] Figure 5 A schematic diagram of a via structure at a double helix position provided by an embodiment of the present invention;

[0026] Figure 6 A comparison curve of absorptivity and wave transmittance corresponding to the side length p of the communication wave absorbing structure provided in an embodiment of the present invention;

[0027] Figure 7 The square resistance R of the annular metal layer of the communication absorbing structure provided in the embodiment of the present invention is s Corresponding absorption rate and wave transmittance comparison curve;

[0028] Figure 8 A comparison curve of absorptivity and wave transmittance corresponding to the gap g1 between the dielectric base layer and the annular metal layer provided in an embodiment of the present invention;

[0029] Fig. 9 A comparison curve of the absorption rate and the wave transmittance corresponding to the ring width w1 of the communication wave absorbing structure provided in an embodiment of the present invention;

[0030] Fig.10 A comparison curve diagram of absorption rate and wave transmittance corresponding to the distance h1 between the first plate and the second plate provided in an embodiment of the present invention;

[0031] Fig.11 A comparison curve of absorptivity and wave transmittance corresponding to the center distance d of the communication wave absorbing structure provided in an embodiment of the present invention;

[0032] Fig.12 A comparison curve diagram of the absorption rate and wave transmittance of the communication absorbing structure provided by the embodiment of the present invention at different incident angles when the electromagnetic wave is incident in the TE mode;

[0033] Fig.13 A comparison graph of the absorption rate and wave transmittance of the communication absorbing structure provided in an embodiment of the present invention at different incident angles when the electromagnetic wave is incident in TM mode. DETAILED DESCRIPTION

[0034] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0035] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0036] Please also read Figures 1 to 5 , the communication wave absorbing structure provided by the present invention is now described. The communication wave absorbing structure comprises a first plate and a second plate, wherein the first plate and the second plate are arranged in a front-to-back correspondence and their axis lines coincide with each other;

[0037] The first plate includes a first dielectric base layer C2, and a first annular metal layer C1 coinciding with the center of the first dielectric base layer C2; the outer edge of the first dielectric base layer C2 and the outer ring of the first annular metal layer C1 are both the same central symmetrical figure, and the size of the first dielectric base layer C2 is larger than the first annular metal layer C1; the first annular metal layer C1 is attached to one side of the first dielectric base layer C2; the first annular metal layer C1 is composed of an even number of first spiral wire groups a1 arranged in sequence at equal intervals, each of the first spiral wire groups a1 includes a pair of spiral wires and a metal sheet a3 of a preset length, wherein a metal diaphragm C5 made of a lossy metal material is embedded on the metal sheet a3 of each first spiral wire group a1;

[0038] The second plate includes a second dielectric base layer C4, and a second annular metal layer C3 coinciding with the center of the second dielectric base layer C4; the outer edge of the second dielectric base layer C4 and the outer ring of the second annular metal layer C3 are both the same central symmetrical figure, and the size of the second dielectric base layer C4 is larger than the second annular metal layer C3; the second annular metal layer C3 is attached to one side of the second dielectric base layer C4; the second annular metal layer C3 is composed of an even number of second spiral wire groups a2 arranged in sequence at equal intervals, and each of the second spiral wire groups a2 includes a pair of spiral wires and a metal sheet a3 of a preset length.

[0039] Among them, the outer edge of the first dielectric base layer C2 and the outer ring of the first annular metal layer C1, the outer edge of the second dielectric base layer C4 and the outer ring of the second annular metal layer C3 can be square, hexagonal or circular. For ease of understanding and description, this embodiment is described by taking the outer edge of the first dielectric base layer C2 and the outer ring of the first annular metal layer C1, the outer edge of the second dielectric base layer C4 and the outer ring of the second annular metal layer C3 as an example to illustrate the characteristics of the communication absorbing structure of the present invention.

[0040] like Figures 1 to 5 As shown, the outer edge of the first dielectric base layer C2 and the outer ring of the first annular metal layer C1, the outer edge of the second dielectric base layer C4 and the outer ring of the second annular metal layer C3 are all square; the first annular metal layer C1 is composed of four first spiral wire groups a1 arranged in sequence with equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square first annular metal layer C1; the second annular metal layer C3 is also composed of four second spiral wire groups a2 arranged in sequence with equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square second annular metal layer C3.

[0041] It should be noted that if Figure 1 and Figure 5 As shown in FIG. 1 , the spirals in one spiral group can be connected to the metal sheet a3 of another spiral group through the via K on the first dielectric base layer C2 or the second dielectric base layer C4 on the other side of the dielectric base layer. In addition, a pair of spirals in the same spiral group can also be connected through the via K on the first dielectric base layer C2 or the second dielectric base layer C4, thereby forming a spiral line as shown in FIG. Figure 3 The wiring pattern shown on the back of the first dielectric substrate C2, and Figure 4 The wiring pattern shown on the back side of the second dielectric substrate C4.

[0042] In a specific application scenario, Figures 1 to 5The values ​​of the parameters are as follows: p = 12mm; l1 = 11mm; h1 = 12mm; t1 = 18um; t2 = 0.2mm; t3 = 18um; t4 = 0.2mm; g1 = 0.5mm; g2 = 2.15mm; w1 = 0.8mm; w2 = 0.1mm; a = 0.4mm; b = 0.4mm; d = 2.3mm. In this application scenario, the dielectric constant of the first dielectric base layer C2 and the second dielectric base layer C4 is 3.2, and the tangent loss is 0.003. As a specific implementation case, the above parameter combination achieves an absorption effect of more than 80% in the frequency band range of 3.2GHz to 5.2GHz, and a transmittance of more than 80% in the frequency band range of 7.1GHz to 12.3GHz, and the bandwidth covers the entire X-band.

[0043] In the case of the present invention, when the values ​​of various parameters are changed, the electromagnetic characteristics of the communication absorbing structure will also change accordingly to meet a wider range of customized needs. The specific rules will be further explained below.

[0044] Figure 6 The change characteristics of the absorption curve and the transmittance curve of the communication absorbing structure when the side length p of the first dielectric base layer C2 and the second dielectric base layer C4 changes are given. It can be clearly seen from the figure that as p increases (the value range of p is 10mm~14mm, and correspondingly, the side length l1 of the first annular metal layer C1 and the second annular metal layer C3 is 9mm~13mm), the absorption peak of the communication absorbing structure will move toward low frequency, and the high-frequency absorption peak will move more obviously. The transmittance curve also follows similar regular characteristics. Interestingly, when p is selected as 10mm, near 9.5GHz, a very obvious electromagnetic bandgap will be generated on the transmittance curve. This feature comes from the double helix structure of the present invention. Its advantage is that it can better expand the wave transmission bandwidth through mutual coupling, and the reasonable selection of structural parameters can effectively avoid this characteristic peak.

[0045] Figure 7 The block resistance R of the metal film C5 is given as s The change characteristics of the absorption curve and the wave transmittance curve of the communication absorbing structure when the resistance value R s The increase (R s The value range is 150Ω~400Ω), the low-frequency absorption peak will continue to move toward the high frequency, and the absorption intensity will increase, even close to 100%, while the position of the high-frequency absorption peak is very stable, but the corresponding absorption intensity will weaken. Preferably, the present invention can select the block resistance R s Loading with a 250Ω lossy metal material can achieve more than 90% electromagnetic absorption at both low and high frequencies. sIncrease, the transmittance curve will shift to high frequency, but the overall transmittance bandwidth does not change significantly, indicating that for the transmittance curve, the position of the absorption peak can be adjusted more simply by adjusting the block resistance of the metal diaphragm C5, and it will not have much impact on the transmittance curve. This is also one of the advantages of the communication absorbing structure in application.

[0046] Figure 8 The change characteristics of the absorption curve and the wave transmittance curve of the communication wave absorbing structure when the gap g1 between the dielectric base layer and the annular metal layer (including between the first dielectric base layer C2 and the first annular metal layer C1, and between the second dielectric base layer C4 and the second annular metal layer C3) changes are given. It can be seen from the curve that with the increase of g1 (the value range of g1 is 0.3mm~0.7mm), the low-frequency absorption peak will continue to move toward high frequency, and the absorption intensity will increase, even close to 100%, while the position of the high-frequency absorption peak will also move toward high frequency, but the corresponding absorption intensity will weaken. As g1 increases, the wave transmission bandwidth of the wave transmittance curve will also increase overall.

[0047] Fig. 9 The change characteristics of the absorption curve and the wave transmittance curve of the communication wave absorbing structure when the ring width w1 of the first annular metal layer C1 and the second annular metal layer C3 changes are given. It can be seen from the curve that with the increase of w1 (the value range of w1 is 0.65mm~0.8mm), the low-frequency absorption peak remains basically unchanged, while the position of the high-frequency absorption peak moves toward high frequency, but the corresponding absorption intensity remains basically unchanged. As w1 increases, the wave transmission bandwidth of the wave transmittance curve is basically unaffected overall.

[0048] Fig.10 The change characteristics of the absorption curve and the wave transmittance curve of the communication wave absorbing structure when the distance h1 between the first plate and the second plate changes are given. It can be seen from the curve that with the increase of h1 (the value range of h1 is 8mm~12mm), the high-frequency and low-frequency absorption peaks move to low frequencies, and the absorption intensity will also increase. As h1 increases, the wave transmission bandwidth of the wave transmittance curve is less affected overall, indicating that for the wave transmission curve, the position of the absorption peak can be more simply adjusted by adjusting the distance h1, and it will not have much impact on the wave transmission curve. This is also one of the advantages of the communication wave absorbing structure in application.

[0049] Fig.11 The change characteristics of the absorption curve and the wave transmittance curve of the communication absorbing structure when the center distance d of the spiral line changes are given. It can be seen from the curve that with the increase of d (the value range of d is 2.3mm~4mm), the low-frequency absorption peak remains basically unchanged. As d increases, the wave transmittance curve will produce an electromagnetic bandgap in the wave transmission band. It can be seen that in the present invention, the position design of each pair of spiral lines is a key variable.

[0050] Fig.12 The absorption curve and transmittance curve of the communication absorbing structure are shown when the electromagnetic wave is incident on the surface of the communication absorbing structure at different angles in the TE mode (i.e., transverse electric wave). As can be seen from the figure, as the incident angle theta increases (theta ranges from 0 degrees to 45 degrees), the low-frequency absorption effect is relatively small, and the bandwidth of the transmission band decreases accordingly with the increase of the incident angle, but it can still cover the entire X-band.

[0051] Fig.13 The absorption curve and transmittance curve of the communication absorbing structure are shown when the electromagnetic wave is incident on the surface of the communication absorbing structure at different angles in the TM mode (transverse magnetic wave). As can be seen from the figure, with the increase of the incident angle theta (theta ranges from 0 degrees to 45 degrees), the low-frequency absorption effect is relatively small, while the transmission band bandwidth will produce an electromagnetic band gap defect at the intermediate frequency as the incident angle increases. This electromagnetic defect can be optimized and removed by adjusting other parameters, such as the center distance and side length of the double helix.

[0052] It should be noted that Figures 2 to 4 When other related geometric parameters identified are changed, the absorption curve of the communication absorbing structure will also be shifted accordingly, and the bandwidth will also be changed accordingly, which will not be described here one by one.

[0053] In particular, in order to be more widely applied to curved devices or portable wearable devices, the first dielectric base layer C2 and the second dielectric base layer C4 of the communication absorbing structure of the present invention can adopt flexible insulating substrates, so that the communication absorbing structure has better flexibility.

[0054] Preferably, in order to avoid the inconvenience of resistance welding of the communication absorbing structure, the present invention can use screen printing technology to achieve the integrated loading of the metal diaphragm C5.

[0055] The communication absorbing structure of the embodiment of the present invention can be applied to the antenna field, such as antenna protective cover, and can also be applied to communication electronic devices and equipment with special requirements. The communication absorbing structure provided by the present invention has the following advantages: 1. It can realize the electromagnetic absorption function, and achieve electromagnetic absorption effects with different performances by changing the side length of the dielectric base layer and the annular metal layer; 2. By selecting materials with good flexibility or even certain transparent properties as the dielectric base layer, the communication absorbing structure can be applied to a wider range of special scenarios, such as curved devices, portable wearable devices, etc.; 3. It can achieve broadband high-transmittance effect for electromagnetic waves within a specific frequency band, and achieve the effect of wave absorption and electromagnetic shielding within a specific frequency band.

[0056] The embodiment of the present invention further provides a communication device, which includes any one of the communication absorbing structures described in the above embodiments. It can be known that the functions and characteristics possessed by the communication absorbing structure are also possessed by the communication device, including but not limited to: ensuring a wider wave transmission bandwidth, realizing a dual absorption peak working mode, having a large isolation of the absorption peaks, and realizing the span of the entire C-band and X-band. For this reason, the performance of the communication device will not be described in detail.

[0057] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A communication wave absorbing structure, characterized in that: It comprises a first plate and a second plate, wherein the first plate and the second plate are arranged in a front-to-back correspondence and their axis lines coincide with each other; The first plate includes a first dielectric base layer, and a first annular metal layer coinciding with the center of the first dielectric base layer; the outer edge of the first dielectric base layer and the outer ring of the first annular metal layer are the same central symmetrical figure, and the size of the first dielectric base layer is larger than the first annular metal layer; the first annular metal layer is attached to one side of the first dielectric base layer; the first annular metal layer is composed of an even number of first spiral wire groups arranged in sequence at equal intervals, each of the first spiral wire groups includes a pair of spiral wires and a metal sheet of a preset length, wherein a metal diaphragm made of a lossy metal material is embedded in the metal sheet of each first spiral wire group; The second plate includes a second dielectric base layer and a second annular metal layer coinciding with the center of the second dielectric base layer; the outer edge of the second dielectric base layer and the outer ring of the second annular metal layer are both the same central symmetrical figure, and the size of the second dielectric base layer is larger than the second annular metal layer; the second annular metal layer is attached to one side of the second dielectric base layer; the second annular metal layer is composed of an even number of second spiral wire groups arranged in sequence at equal intervals, and each of the second spiral wire groups includes a pair of spiral wires and a metal sheet of a preset length.

2. The communication absorbing structure according to claim 1, characterized in that: The outer edge of the first dielectric base layer and the outer ring of the first annular metal layer, the outer edge of the second dielectric base layer and the outer ring of the second annular metal layer are all square, hexagonal or circular.

3. The communication absorbing structure according to claim 1, characterized in that: The outer edge of the first dielectric base layer and the outer ring of the first annular metal layer, the outer edge of the second dielectric base layer and the outer ring of the second annular metal layer are all square; The first annular metal layer is composed of four first spiral wire groups arranged in sequence at equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square first annular metal layer; The second annular metal layer is composed of four second spiral wire groups arranged in sequence with equal intervals, wherein the four pairs of spiral wires are respectively located on the four sides of the square second annular metal layer.

4. The communication absorbing structure according to any one of claims 1 to 3, characterized in that: The side lengths of the first annular metal layer and the second annular metal layer are 9 to 13 mm.

5. The communication absorbing structure according to any one of claims 1 to 3, characterized in that: The ring widths of the first annular metal layer and the second annular metal layer are 0.65-0.8 mm.

6. The communication wave absorbing structure according to any one of claims 1 to 3, characterized in that: The center distance between each pair of spiral lines is 2.3-4 mm.

7. The communication absorbing structure according to any one of claims 1 to 3, characterized in that: The lossy metal material is an ITO film or an IZO film.

8. The communication absorbing structure according to any one of claims 1 to 3, characterized in that: The sheet resistance of the metal film is 150-400 ohms.

9. The communication absorbing structure according to any one of claims 1 to 3, characterized in that: The distance between the first plate and the second plate is 8-12 mm.

10. A communication device, characterized in that: It comprises the communication absorbing structure as claimed in any one of claims 1 to 9.

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