Semiconductor Laser

Abstract

The present application discloses a semiconductor laser, and relates to the technical field of laser equipment. The semiconductor laser of the present application includes a cooling outer box and a light-emitting component, the cooling outer box has an inner cavity and an inlet and an outlet communicating with the inner cavity; the light-emitting component is arranged in the inner cavity, and the light-emitting component is provided with at least one cooling channel penetrating the light-emitting component, and both ends of the cooling channel are communicated with the inner cavity. The present application can improve the heat dissipation capacity of the light-emitting component by directly opening a cooling channel on the light-emitting component by arranging a cooling outer box outside the light-emitting component, thereby improving the power of the semiconductor laser and improving the stability and long-term reliability of the semiconductor laser.

Description

Technical Field

[0001] The present application relates to the technical field of laser equipment, and in particular, to a semiconductor laser. Background Art

[0002] A laser is a device that can emit laser. Among them, semiconductor laser, also known as laser diode, is a laser that uses semiconductor material as working material. It is small in size, long in life, practical and the most widely used.

[0003] The key direction of laser development is to increase the power of semiconductor lasers. Generally, there are two ways to increase the power of semiconductor lasers. First, the performance of the chip can be directly improved to increase the power of semiconductor lasers. Second, the thermal resistance can be reduced during the semiconductor laser packaging process to improve the heat dissipation capacity. Therefore, when the chip performance is the same, how to improve the heat dissipation capacity of the heat sink is extremely critical. Summary of the invention

[0004] The purpose of the present application is to provide a semiconductor laser, which can improve the heat dissipation capacity of the light-emitting component by directly opening a cooling channel on the light-emitting component by arranging a cooling outer box outside the light-emitting component.

[0005] In order to achieve the above purpose, the embodiments of the present application are implemented as follows:

[0006] A semiconductor laser comprises: a cooling outer box and a light-emitting component, wherein the cooling outer box has an inner cavity and an inlet and an outlet communicating with the inner cavity; the light-emitting component is arranged in the cooling outer box, and the light-emitting component is provided with at least one cooling channel penetrating the light-emitting component, and both ends of the cooling channel are communicated with the inner cavity.

[0007] In one embodiment, the light-emitting component includes: a heat sink array, a chip array and at least two lead-out electrodes, the heat sink array includes a plurality of chip heat sinks, and the plurality of chip heat sinks are distributed in a linear array along a first direction; the chip array includes a plurality of laser chips, and the plurality of laser chips are distributed in a linear array along the first direction and are sandwiched between two adjacent chip heat sinks; the plurality of lead-out electrodes are respectively arranged at both ends of the heat sink array along the first direction.

[0008] In one embodiment, the cooling outer box is provided with a first mounting hole and a second mounting hole for fixing the light-emitting component on two opposite surfaces; wherein the two ends of the lead-out electrode respectively pass through the first mounting hole and the second mounting hole to be exposed to the cooling outer box; the heat sink array passes through the second mounting hole to be exposed to the cooling outer box, and the chip array is arranged outside the cooling outer box.

[0009] In one embodiment, a plurality of cooling channels are provided; the plurality of cooling channels are straight hole channels, and the straight hole channels penetrate the heat sink array and the lead-out electrode along the first direction.

[0010] In one embodiment, each of the laser chips is smaller than each of the chip heat sinks, and the light-emitting component further includes: an insulating plate array, the insulating plate array includes a plurality of insulating plates, the plurality of insulating plates are distributed in a linear array along the first direction, and are sandwiched between two adjacent chip heat sinks; wherein a gap is left between each of the insulating plates and the corresponding laser chip.

[0011] In one embodiment, the cooling channels are provided in plurality; the plurality of cooling channels include at least one straight hole channel and at least one staggered hole channel; the straight hole channel penetrates the heat sink array, the insulating plate array and the lead-out electrode along the first direction; the staggered hole channel includes a first drainage hole provided on the lead-out electrode, a second drainage hole provided on the insulating plate and a third drainage hole provided on the chip heat sink; wherein the third drainage holes of two adjacent chip heat sinks are staggered along the length direction of the second drainage hole.

[0012] In one embodiment, the cooling outer box is connected to a first sealed transparent cover and a second sealed transparent cover on two opposite surfaces respectively; the first sealed transparent cover is arranged on the lead-out electrode, and the second sealed transparent cover is arranged on the heat sink array.

[0013] In one embodiment, the cooling outer box includes a box body and a cover plate connected to each other, the second mounting hole is provided on the cover plate, and the first mounting hole is provided on the box body.

[0014] In one embodiment, the length of the inner cavity along the first direction is greater than the length of the light emitting member, and the inner cavity leaves gaps at both ends of the light emitting member along the first direction to form a buffer space.

[0015] In one embodiment, the axis of the inlet and the axis of the outlet are located on the same straight line, and the axis of the inlet is arranged in the same direction as the first direction.

[0016] In one embodiment, the inlet is connected to an inlet pipe, and the outlet is connected to an outlet pipe.

[0017] The beneficial effects of this application compared with the prior art are:

[0018] The present application can improve the heat dissipation capacity of the light-emitting component by directly providing a cooling outer box outside the light-emitting component, directly opening a cooling channel on the light-emitting component and directly using a cooling medium for cooling, and using parallel cooling flushing water channels. The laser chip is in direct contact with the chip heat sinks of the positive and negative electrodes. The structure adopts an integrated box-type structure setting, which makes it small in size, simple in structure, and the output optical power density can reach hundreds of thousands of kilowatts, thereby improving the power of the semiconductor laser and improving the stability and long-term reliability of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 This is a schematic diagram of the structure of a semiconductor laser according to an embodiment of the present application.

[0021] Figure 2 An exploded schematic diagram of a semiconductor laser according to an embodiment of the present application.

[0022] Figure 3 This is a front view of a semiconductor laser according to an embodiment of the present application.

[0023] Figure 4 For this application Figure 3 Enlarged view of part E.

[0024] Figure 5 A top view of a semiconductor laser according to an embodiment of the present application.

[0025] Figure 6 For this application Figure 5 A-A cross-sectional view.

[0026] Figure 7 For this application Figure 5 B-B direction cross-sectional view.

[0027] Figure 8 An exploded schematic diagram of a light-emitting component according to an embodiment of the present application is shown.

[0028] Fig. 9 An exploded schematic diagram of a light-emitting component according to an embodiment of the present application is shown.

[0029] Fig.10 This is a right side view of a semiconductor laser shown in one embodiment of the present application.

[0030] Fig.11This is a left side view of a semiconductor laser shown in one embodiment of the present application.

[0031] in, Figure 7 The solid arrows in the figure indicate the flow direction of the cooling medium.

[0032] Icons: 100 - semiconductor laser; 200 - cooling outer box; 210 - inner cavity; 211 - buffer space; 220 - inlet; 221 - inlet pipe; 230 - outlet; 231 - outlet pipe; 240 - box; 241 - first mounting hole; 242 - first sealing transparent cover; 250 - cover plate; 251 - second mounting hole; 252 - second sealing transparent cover; 300 - light emitting element; 310 - heat sink array; 311 - chip heat sink; 312 - boss; 313 - heat dissipation gap; 320 - chip array; 321 - laser chip; 330 - extraction electrode; 340 - insulation plate array; 341 - insulation plate; 400 - cooling channel; 410 - staggered hole channel; 411 - first drainage hole; 412 - second drainage hole; 413 - third drainage hole; 420 - straight hole channel; 421 - fourth drainage hole; 422 - fifth drainage hole; 423 - sixth drainage hole. DETAILED DESCRIPTION

[0033] The terms “first”, “second”, “third”, etc. are only used for distinguishing descriptions and do not indicate the order of arrangement, nor can they be understood as indicating or implying relative importance.

[0034] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components are required to be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0035] In the description of the present application, it should be noted that the terms "inside", "outside", "left", "right", "up", "down", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are directions or positional relationships in which the products of the present application are usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present application.

[0036] In the description of this application, unless otherwise clearly specified and limited, the terms "set", "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements.

[0037] The technical solution of the present application will be described clearly and completely below in conjunction with the accompanying drawings.

[0038] Please refer to Figure 1 , which is a schematic diagram of the structure of a semiconductor laser 100 according to an embodiment of the present application. A semiconductor laser 100 includes a cooling outer box 200 and a light emitting element 300. The cooling outer box 200 has an inner cavity 210 (see Figure 2 ) and an inlet 220 and an outlet 230 communicating with the inner cavity 210; the inlet 220 is detachably connected to an inlet pipe 221 by means of bolt connection or the like, and the outlet 230 is detachably connected to an outlet pipe 231 by means of bolt connection or the like.

[0039] The light emitting element 300 is disposed in the cooling outer box 200, and the entirety or part of the light emitting element 300 is disposed in the inner cavity 210. The light emitting element 300 is provided with at least one cooling channel 400 (see Figure 2 ), both ends of the cooling channel 400 are connected to the inner cavity 210. The cooling channel 400 can penetrate the light emitting element 300 along a straight line or a curve. In one embodiment, the cooling channel 400 can adopt a parallel cooling flushing water channel.

[0040] During an operation, a cooling medium such as a coolant or a cooling gas is introduced into the inner cavity 210 through the inlet pipe 221 and the inlet 220. The cooling medium introduced into the inner cavity 210 passes through the cooling channel 400 on the light-emitting component 300 and passes through the light-emitting component 300, thereby directly dissipating heat from the light-emitting component 300 through the cooling medium. The cooling medium passing through the cooling channel 400 finally flows out of the cooling outer box 200 from the outlet pipe 231 and the outlet 230.

[0041] Therefore, this embodiment can directly open a cooling channel 400 on the light emitting element 300 by providing a box-type structure of a cooling outer box 200 outside the light emitting element 300, directly use a cooling medium such as a cooling liquid or a cooling gas for cooling, and the cooling medium is in direct contact with the light emitting element 300, thereby improving the heat dissipation capacity of the light emitting element 300, thereby improving the power of the semiconductor laser 100 and improving the stability and long-term reliability of the semiconductor laser 100. In addition, this embodiment has a simple and unique structure, and after integration, it is not only small in size, but also has an output optical power density of up to hundreds of thousands of kilowatts.

[0042] The axis of the inlet 220 and the axis of the outlet 230 are located on the same straight line, and the inlet 220 is located above the outlet 230. The axis of the inlet 220 is used as the first direction, indicating up and down, which is represented by the Z direction. The length direction of the light-emitting component 300 is used as the second direction, indicating left and right, which is represented by the X direction. The width direction of the light-emitting component 300 is used as the third direction, indicating front and back, which is represented by the Y direction. The first direction, the second direction and the third direction are perpendicular to each other.

[0043] Please refer to Figure 2 , which is an exploded schematic diagram of a semiconductor laser 100 shown in an embodiment of the present application. The light emitting element 300 includes a heat sink array 310, a chip array 320 and at least two extraction electrodes 330. The heat sink array 310 includes a plurality of chip heat sinks 311, and the plurality of chip heat sinks 311 are distributed in a linear array along a first direction; the chip array 320 includes a plurality of laser chips 321, and the plurality of laser chips 321 are distributed in a linear array along the first direction and sandwiched between two adjacent chip heat sinks 311; and the plurality of extraction electrodes 330 are respectively disposed at both ends of the heat sink array 310 along the first direction (the upper and lower ends along the Z direction).

[0044] The cooling outer box 200 is provided with a first mounting hole 241 and a second mounting hole 251 on two opposite surfaces (the left and right sides along the X direction); the light emitting element 300 is fixed on the cooling outer box 200 through the first mounting hole 241 and the second mounting hole 251. The light emitting element 300 is partially arranged in the inner cavity 210 and partially exposed to the cooling outer box 200. The two ends of the lead-out electrode 330 are respectively exposed to the cooling outer box 200 through the first mounting hole 241 and the second mounting hole 251; the heat sink array 310 is exposed to the cooling outer box 200 through the second mounting hole 251, and the chip array 320 is arranged outside the cooling outer box 200. In this embodiment, in order to facilitate the installation of the light emitting element 300, the cooling outer box 200 includes a box body 240 and a cover plate 250 connected to each other by bolt connection, welding, etc. The second mounting hole 251 is arranged on the cover plate 250, and the first mounting hole 241 is arranged on the box body 240.

[0045] The light emitting element 300 further includes an insulating plate array 340, which includes a plurality of insulating plates 341, which are distributed in a linear array along the first direction and sandwiched between two adjacent chip heat sinks 311. In this embodiment, since the size of each laser chip 321 is smaller than the size of each chip heat sink 311, the width of the laser chip 321 along the Y direction is smaller than the minimum width of the chip heat sink 311 along the Y direction, and the length of the laser chip 321 along the X direction is smaller than the length of the chip heat sink 311 along the X direction, the insulating plate 341 is added between two adjacent chip heat sinks 311 in this embodiment, so as to play a supporting role and improve the structural stability of the light emitting element 300.

[0046] There is a gap between each insulating plate 341 and the corresponding laser chip 321. The chip array 320 and the insulating plate array 340 are respectively located at the left and right ends of the heat sink array 310 along the X direction to avoid mutual influence between the chip array 320 and the insulating plate array 340. In this embodiment, the cross section of the chip heat sink 311 part disposed outside the cooling box 200 along the X direction is a trapezoidal structure.

[0047] The first and second sealed transparent covers 242 and 252 are connected to the left and right sides of the cooling outer box 200 along the X direction respectively by bolt connection or the like; the first sealed transparent cover 242 is arranged on the extraction electrode 330 and is arranged adjacent to the box body 240, and the second sealed transparent cover 252 is arranged on the heat sink array 310 and is arranged adjacent to the cover plate 250. The first and second sealed transparent covers 242 and 252 are used for sealing to prevent the cooling medium such as coolant or cooling gas from flowing out, wherein, to improve the sealing effect, sealing members such as rubber sealing rings may be arranged between the first sealed transparent cover 242 and the cooling outer box 200 and between the second sealed transparent cover 252 and the cooling outer box 200.

[0048] The chip heat sink 311 may be made of metal, ceramic, etc. The insulating plate 341 may be made of FPC (fiberglass), etc.

[0049] Please refer to Figure 3 , which is a front view of a semiconductor laser 100 according to an embodiment of the present application. Figure 4 , which is the present application Figure 3 Since the size of each laser chip 321 is smaller than the size of each chip heat sink 311, and each insulating plate 341 (see Figure 2 ) and the corresponding laser chip 321, a heat dissipation gap 313 can be formed between two adjacent chip heat sinks 311. And because the chip array 320 is arranged outside the cooling outer box 200, the heat dissipation gap 313 is also partially arranged outside the cooling outer box 200, so that external air can pass through, thereby improving the heat dissipation effect of the heat sink.

[0050] In this embodiment, in order to increase the size of the heat dissipation gap 313 and better fix the laser chip 321, a boss 312 matching the laser chip 321 is protruded on the lower surface of the chip heat sink 311. The cross-sectional dimension of the boss 312 along the Y direction is equal to the cross-sectional dimension of the laser chip 321 along the Y direction.

[0051] Among them, the thickness of the insulating plate 341 along the Z direction may be equal to or different from the thickness of the laser chip 321 along the Z direction, that is, a protrusion matching the insulating plate 341 may or may not be provided on the lower surface of the chip heat sink 311. In this embodiment, a protrusion matching the insulating plate 341 is not provided on the lower surface of the chip heat sink 311, so that the thickness of the insulating plate 341 is greater than the thickness of the laser chip 321, thereby saving manufacturing costs.

[0052] Please refer to Figure 5 , which is a top view of a semiconductor laser 100 according to an embodiment of the present application. Figure 6, which is the present application Figure 5 The length of the inner cavity 210 along the first direction is greater than the length of the light emitting element 300 , and the inner cavity 210 leaves gaps at both ends of the light emitting element 300 along the first direction to form a buffer space 211 .

[0053] The provision of the buffer space 211 can reduce the flow rate of cooling medium such as cooling liquid or cooling gas, so that the cooling medium can cool the light emitting element 300 through the cooling channel 400 and prolong the cooling time.

[0054] Please refer to Figure 7 , which is the present application Figure 5 A BB direction cross-sectional view. A plurality of cooling channels 400 are provided; the plurality of cooling channels 400 include at least one straight hole channel 420 and at least one staggered hole channel 410; the straight hole channel 420 penetrates the heat sink array 310, the insulating plate array 340 and the lead-out electrode 330 along the first direction (Z direction); the cross section of the staggered hole channel 410 along the Z direction is a curve or a broken line.

[0055] In this embodiment, the cooling channel 400 includes a straight hole channel 420 and a staggered hole channel 410, wherein the cooling medium has a shorter flow path and a faster flow rate in the straight hole channel 420, and the cooling medium has a longer flow path and a slower flow rate and a longer flow time in the staggered hole channel 410, thereby achieving a better cooling effect on the light-emitting component 300.

[0056] Please refer to Figure 8 , which is an exploded schematic diagram of the light-emitting component 300 shown in an embodiment of the present application. The staggered hole channel 410 includes a first drainage hole 411 provided on the lead-out electrode 330, a second drainage hole 412 provided on the insulating plate 341, and a third drainage hole 413 provided on the chip heat sink 311; wherein, the third drainage holes 413 of two adjacent chip heat sinks 311 are staggered along the length direction of the second drainage hole 412. In this embodiment, the length direction of the second drainage hole 412 is set along the X direction. In another embodiment, the length direction of the second drainage hole 412 can be set in the Y direction or can be inclined.

[0057] In this embodiment, the first drainage holes 411 on the extraction electrode 330 are four strip holes, the second drainage holes 412 on the insulating plate 341 are four special-shaped holes, and the third drainage holes 413 on the chip heat sink 311 are four strip holes.

[0058] In this embodiment, among two adjacent chip heat sinks 311, in the chip heat sink 311 located at the top, the two third drainage holes 413 on the left are set on the right, and the two third drainage holes 413 on the right are set on the left; in the chip heat sink 311 located at the bottom, the two third drainage holes 413 on the left are set on the left, and the two third drainage holes 413 on the right are set on the right.

[0059] In this embodiment, the second drainage holes 412 are special-shaped holes with a long length, and in the two adjacent insulating plates 341, in the upper insulating plate 341, the two second drainage holes 412 on the left are larger at the left end and smaller at the right end, and the two second drainage holes 412 on the right are smaller at the left end and larger at the right end; in the lower insulating plate 341, the two second drainage holes 412 on the left are smaller at the left end and larger at the right end, and the two second drainage holes 412 on the right are larger at the left end and smaller at the right end.

[0060] During an operation, when the cooling medium passes through the staggered hole channel 410, it reaches the first chip heat sink 311 after passing through the first drainage hole 411 on the lead-out electrode 330 located above. Since the third drainage holes 413 of the two adjacent chip heat sinks 311 are staggered along the length direction of the second drainage hole 412, when the cooling medium passes through the third drainage hole 413 of the first chip heat sink 311 and the second drainage hole 412 on an insulating plate 341, it must flow directly to the surface of the next chip heat sink 311, and then continue to flow through the third drainage hole 413 of the second chip heat sink 311, thereby increasing the contact area between the cooling medium and the chip heat sink 311, extending the contact time between the cooling medium and the chip heat sink 311, and improving the cooling effect of the semiconductor laser 100.

[0061] The straight hole channel 420 includes a fourth drainage hole 421 provided on the extraction electrode 330, a fifth drainage hole 422 provided on the insulating plate 341, and a sixth drainage hole 423 provided on the chip heat sink 311. In this embodiment, the fourth drainage hole 421 on the extraction electrode 330 is 5 circular step holes, the sixth drainage hole 423 on the chip heat sink 311 is 5 cylindrical holes, and the fifth drainage hole 422 on the insulating plate 341 is 4 cylindrical holes. One of the sixth drainage holes 423 is provided in the heat dissipation gap 313 (please refer to Figure 4 ) place.

[0062] The first drainage hole 411 , the second drainage hole 412 , the third drainage hole 413 , the fourth drainage hole 421 , the fifth drainage hole 422 and the sixth drainage hole 423 may be round through holes, square through holes or other special-shaped holes.

[0063] Please refer to Fig. 9, which is an exploded schematic diagram of the light-emitting component 300 shown in an embodiment of the present application. In this embodiment, the light-emitting component 300 is not provided with an insulating plate 341, and a plurality of cooling channels 400 are provided; the plurality of cooling channels 400 are all straight hole channels 420, and the straight hole channels 420 penetrate the heat sink array 310 and the lead-out electrode 330 along the first direction. The straight hole channels 420 include a fourth drainage hole 421 provided on the lead-out electrode 330 and a sixth drainage hole 423 provided on the chip heat sink 311. In this embodiment, there are 9 fourth drainage holes 421 on the lead-out electrode 330, and there are 9 sixth drainage holes 423 on the chip heat sink 311.

[0064] The sixth drainage hole 423 and the fourth drainage hole 421 may be round through holes, square through holes or other special-shaped holes.

[0065] Please refer to Fig.10 , which is a right view of a semiconductor laser 100 shown in an embodiment of the present application. Two extraction electrodes 330 are provided, and the two extraction electrodes 330 are parallel to each other, and the size of the two extraction electrodes 330 is the same. The extraction electrode 330 located at the top is the negative electrode, and the extraction electrode 330 located at the bottom is the positive electrode.

[0066] The cross-sectional area of ​​the first sealing cover 242 along the Z direction is smaller than the cross-sectional area of ​​the cooling outer box 200 along the Z direction. The first sealing cover 242 can be connected to the box body 240 of the cooling outer box 200 by seven bolts.

[0067] Please refer to Fig.11 , which is a left view of a semiconductor laser 100 shown in an embodiment of the present application. The cross-sectional area of ​​the second sealed cover 252 along the Z direction is smaller than the cross-sectional area of ​​the cooling outer box 200 along the Z direction. The second sealed cover 252 can be connected to the cover plate 250 of the cooling outer box 200 by four bolts. The cover plate 250 can be connected to the box body 240 (see Fig.10 )connect.

[0068] It should be noted that, in the absence of conflict, the features in the embodiments of this application may be combined with each other.

[0069] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor laser, It is characterized in that include: A cooling outer box having an inner cavity and an inlet and an outlet communicating with the inner cavity; as well as A light-emitting component is arranged in the cooling outer box, and the light-emitting component is provided with at least one cooling channel penetrating the light-emitting component, and both ends of the cooling channel are communicated with the inner cavity; The light emitting element comprises a heat sink array, a chip array, an insulating plate array and at least two extraction electrodes, the heat sink array comprises a plurality of chip heat sinks, the chip array comprises a plurality of laser chips, the insulating plate array comprises a plurality of insulating plates, the plurality of insulating plates, the plurality of chip heat sinks and the plurality of laser chips are all distributed in a linear array along a first direction, one of the laser chips and one of the insulating plates are sandwiched between two adjacent chip heat sinks, and the extraction electrodes are respectively arranged at both ends of the heat sink array along the first direction; There are multiple cooling channels, and the multiple cooling channels include at least one staggered hole channel; the staggered hole channel includes a first drainage hole provided on the lead-out electrode, a second drainage hole provided on the insulating plate and a third drainage hole provided on the chip heat sink; wherein the third drainage holes of two adjacent chip heat sinks are staggered along the length direction of the second drainage hole.

2. The semiconductor laser according to claim 1, It is characterized in that The cooling outer box is provided with a first mounting hole and a second mounting hole for fixing the light-emitting element on two opposite surfaces respectively; Wherein, two ends of the lead-out electrode respectively pass through the first mounting hole and the second mounting hole to be exposed to the cooling outer box; The heat sink array is exposed outside the cooling outer box through the second mounting hole, and the chip array is arranged outside the cooling outer box.

3. The semiconductor laser according to claim 1, It is characterized in that The cooling channel is provided with a plurality of channels; The plurality of cooling channels are all straight hole channels, and the straight hole channels penetrate the heat sink array and the lead-out electrode along the first direction.

4. The semiconductor laser according to claim 1, It is characterized in that Each of the laser chips is smaller than each of the chip heat sinks, wherein a gap is left between each of the insulating plates and the corresponding laser chip.

5. The semiconductor laser according to claim 4, It is characterized in that The plurality of cooling channels also include at least one straight hole channel; the straight hole channel penetrates the heat sink array, the insulating plate array and the lead-out electrode along the first direction; the straight hole channel includes a fourth drainage hole provided on the lead-out electrode, a fifth drainage hole provided on the insulating plate and a sixth drainage hole provided on the chip heat sink.

6. The semiconductor laser according to any one of claims 2 to 5, It is characterized in that The cooling outer box is respectively connected with a first sealed transparent cover and a second sealed transparent cover on two opposite surfaces; The first sealing transparent cover is disposed on the lead-out electrode, and the second sealing transparent cover is disposed on the heat sink array.

7. The semiconductor laser according to claim 6, It is characterized in that The length of the inner cavity along the first direction is greater than the length of the light emitting element, The inner cavity has gaps at two ends of the light emitting member along the first direction to form a buffer space.

8. The semiconductor laser according to claim 1, It is characterized in that The axis of the inlet and the axis of the outlet are located on the same straight line, and the axis of the inlet is arranged in the same direction as the first direction.

9. The semiconductor laser according to claim 1, It is characterized in that The inlet is connected to an inlet pipe, and the outlet is connected to an outlet pipe.

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