Processing liquid discharge nozzle, nozzle arm, substrate processing apparatus, and substrate processing method

Abstract

The present invention provides a processing liquid discharge nozzle, a nozzle arm, a substrate processing apparatus, and a substrate processing method. The processing liquid discharge nozzle according to an embodiment is a processing liquid discharge nozzle that discharges a processing liquid for substrate processing. The processing liquid discharge nozzle includes a nozzle main body portion and an angle changing mechanism. The nozzle main body portion includes: a first main body portion having a first flow path formed therein that communicates with a processing liquid supply path; and a second main body portion having a second flow path formed therein that communicates with the first flow path and is bent with respect to the first main body portion. The angle changing mechanism changes the angle of the nozzle main body portion in the horizontal direction with respect to a fixing member that fixes the nozzle main body portion. The present invention can suppress the generation of particles.

Description

Technical Field

[0001] The present invention relates to a processing liquid discharge nozzle, a nozzle arm, a substrate processing apparatus, and a substrate processing method. Background Art

[0002] In Patent Document 1, a technique for discharging a processing liquid from a processing liquid nozzle onto a substrate is disclosed.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2019-40958 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention provides a technique for suppressing the generation of particles.

[0008] Technical Solution for Solving the Technical Problem

[0009] A processing liquid discharge nozzle according to one aspect of the present invention is a processing liquid discharge nozzle that discharges a processing liquid for substrate processing. The processing liquid discharge nozzle includes a nozzle main body portion and an angle changing mechanism. The nozzle main body portion includes: a first main body portion having a first flow path formed therein and communicating with a processing liquid supply path; and a second main body portion having a second flow path formed therein and communicating with the first flow path, and being bent with respect to the first main body portion. The angle changing mechanism changes the angle of the nozzle main body portion in the horizontal direction with respect to a fixing member that fixes the nozzle main body portion.

[0010] Advantageous Effects of the Invention

[0011] According to the present invention, the generation of particles can be suppressed. Brief Description of the Drawings

[0012] Figure 1 is a schematic diagram showing the configuration of a substrate processing apparatus according to the first embodiment.

[0013] Figure 2 is a perspective view of a processing liquid supply unit according to the first embodiment.

[0014] Figure 3 is a top view of a processing liquid supply unit according to the first embodiment.

[0015] Figure 4 is Figure 3 a sectional view taken along line IV-IV.

[0016] Figure 5 is a front view of a processing liquid discharge nozzle according to the first embodiment.

[0017] Figure 6 This is a top view of the processing liquid discharge nozzle of the first embodiment.

[0018] Figure 7 This is Figure 6 a VII-VII cross-sectional view.

[0019] Figure 8 This is a flowchart for explaining the release angle change process of the first embodiment.

[0020] Figure 9 This is a top view of the processing liquid supply section of the second embodiment.

[0021] Figure 10 This is a top view of the processing liquid discharge nozzle of the second embodiment.

[0022] Figure 11 This is Figure 10 an XI-XI cross-sectional view.

[0023] Figure 12 This is a perspective view of the processing liquid discharge nozzle of the second embodiment as viewed obliquely from below.

[0024] Figure 13 This is Figure 9 a XIII-XIII cross-sectional view.

[0025] Figure 14 This is a top view of the processing liquid supply section of the third embodiment.

[0026] Figure 15 This is a schematic diagram for explaining the arrangement of the processing liquid discharge nozzle and the gas discharge nozzle of the third embodiment.

[0027] Figure 16 This is a perspective view showing a part of the substrate processing apparatus of the fourth embodiment.

[0028] Figure 17 This is a schematic diagram showing the state where the processing liquid discharge nozzle is in the standby position in the substrate processing apparatus of the fourth embodiment.

[0029] Figure 18 This is a schematic diagram showing the state where the processing liquid discharge nozzle is in the discharge position in the substrate processing apparatus of the fourth embodiment.

[0030] Figure 19 This is a schematic diagram showing the state where the first conduction portion is in the non-contact position in the substrate processing apparatus of the fifth embodiment.

[0031] Figure 20 This is a schematic diagram showing the state where the first conduction portion is in the contact position in the substrate processing apparatus of the fifth embodiment.

[0032] Figure 21 It is a perspective view showing a part of the substrate processing apparatus according to the sixth embodiment.

[0033] Figure 22 It is a perspective view showing a part of the substrate processing apparatus according to the seventh embodiment.

[0034] Figure 23 It is a cross-sectional view showing a part of the arm according to the modified example.

[0035] Explanation of reference numerals

[0036] 1 Substrate processing apparatus

[0037] 2 Processing container

[0038] 3 Holding part (an example of a substrate rotation part)

[0039] 4 Outer cup (an example of a cup part)

[0040] 5 Arm (an example of a nozzle arm)

[0041] 6 Control device

[0042] 6b Control part

[0043] 10, 100 Arm part

[0044] 11 Moving mechanism (an example of a rotating mechanism)

[0045] 12, 50, 70 Processing liquid supply part

[0046] 20, 51 Nozzle mounting block (an example of a fixing part)

[0047] 21, 52, 80 Processing liquid discharge nozzle

[0048] 30, 53 Nozzle main body part

[0049] 31 Nozzle discharge part

[0050] 31b Discharge flow path

[0051] 31c Inner wall surface

[0052] 31e Inner wall surface

[0053] 32, 54 Connection part (an example of an angle changing mechanism)

[0054] 35, 55, 82 First main body part

[0055] 35a First flow path

[0056] 36 Second main body part

[0057] 36a second flow path

[0058] 36c inner wall surface

[0059] 60 alignment part

[0060] 71 gas release nozzle

[0061] 90, 95 first conduction part

[0062] 91, 96 second conduction part

[0063] 91b, 96b deformation part

[0064] 100a contact part

[0065] 101 ion generator

[0066] W substrate. Detailed implementation mode

[0067] Hereinafter, with reference to the drawings, embodiments of the treatment liquid release nozzle, nozzle arm, substrate processing apparatus, and substrate processing method disclosed in the present invention will be described in detail. In addition, the treatment liquid release nozzle, nozzle arm, substrate processing apparatus, and substrate processing method are not limited to those disclosed in the following embodiments.

[0068] In each of the drawings referred to below, in order to make the description easy to understand, an orthogonal coordinate system in which the X-axis direction, Y-axis direction, and Z-axis direction orthogonal to each other are sometimes shown, and the positive direction of the Z-axis is the vertically upward direction. The X-axis direction and Y-axis direction are horizontal directions. Hereinafter, the positive direction of the Z-axis may be referred to as the upper side, and the negative direction of the Z-axis may be referred to as the lower side for description.

[0069] (First Embodiment)

[0070] <Overall configuration of the substrate processing apparatus>

[0071] Refer to Figure 1 , and the configuration of the substrate processing apparatus 1 according to the first embodiment will be described. Figure 1 is a schematic diagram showing the configuration of the substrate processing apparatus 1 according to the first embodiment.

[0072] The substrate processing apparatus 1 includes a processing container 2, a holding unit 3, an outer cup 4, an arm 5, and a control device 6. The processing container 2 houses the holding unit 3, the outer cup 4, and the arm 5. The processing container 2 houses the treatment liquid release nozzle 21 and the moving mechanism 11 of the arm 5 described later.

[0073] The holding unit 3 holds the circular substrate W placed thereon. The holding unit 3 holds the substrate W when substrate processing is performed. For example, the holding unit 3 sucks and holds the lower surface side of the wafer W with a vacuum chuck. In addition, the holding unit 3 (an example of a substrate rotation unit) rotates the placed substrate W. Specifically, the holding unit 3 rotates around an axis in the Z-axis direction to rotate the held substrate W.

[0074] In addition, the holding unit 3 moves up and down in the Z-axis direction. The holding unit 3 moves up and down, for example, while holding the substrate W. The holding unit 3 moves the substrate W up and down between the transfer position and the processing position. The transfer position is set at a position above the outer cup 4 and is the position where the substrate W is transferred between the holding unit 3 and a substrate transfer device (not shown). The processing position is below the transfer position and is set inside the outer cup 4 and is the position where substrate processing is performed on the substrate W.

[0075] The outer cup 4 (an example of a cup portion) is provided to surround the outside of the holding unit 3 and the substrate W held by the holding unit 3. The outer cup 4 is provided in a ring shape.

[0076] The outer cup 4 receives the processing liquid scattered from the substrate W. The outer cup 4 is formed of a material with high chemical resistance. A drain port (not shown) is provided at the bottom of the outer cup 4. The processing liquid received by the outer cup 4 is discharged from the drain port to the outside of the processing container 2.

[0077] The processing liquid is, for example, a chemical solution, a rinsing liquid, etc. The chemical solution is, for example, hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), fluonitric acid, etc. In addition, fluonitric acid is a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO3). In addition, the rinsing liquid is, for example, DIW (deionized water).

[0078] A pair of arms 5 are arranged side by side in the X-axis direction. Specifically, the arms 5 are arranged on both sides of the substrate W in the X-axis direction. Hereinafter, the arm 5 on the negative X-axis side of the pair of arms 5 may be referred to as the left arm 5L, and the arm 5 on the positive X-axis side of the pair of arms 5 may be referred to as the right arm 5R for explanation. The arm 5 includes an arm portion 10, a moving mechanism 11, and a processing liquid supply portion 12. In addition, one arm 5 may be arranged.

[0079] The arm portion 10 extends in the Z-axis direction from the root end and extends in the horizontal direction from the upper end. The arm portion 10 is provided in an L shape.

[0080] The moving mechanism 11 (an example of a rotating mechanism) rotates the arm 10. Specifically, the moving mechanism 11 rotates the arm 10 about the axis of the arm 10 extending in the Z-axis direction. In addition, the moving mechanism 11 moves the arm 10 in the X-axis direction and the Z-axis direction. A plurality of moving mechanisms 11 may be provided. For example, as the moving mechanism 11, a moving mechanism that rotates the arm 10 about the axis in the Z-axis direction, a moving mechanism that moves the arm 10 in the X-axis direction, and a moving mechanism that moves the arm 10 in the Z-axis direction are provided.

[0081] The processing liquid supply unit 12 supplies the processing liquid to the upper surface of the substrate W. The processing liquid supply unit 12 discharges the processing liquid to the periphery of the upper surface of the substrate W and performs an etching process on the periphery of the substrate W. The processing liquid supply unit 12 is provided at the front end of the arm 10. Details of the processing liquid supply unit 12 will be described later.

[0082] The periphery is a region including the radially inner side of the substrate W to a width of, for example, about 1 to 5 mm from the end face of the circular substrate W. The periphery is an annular region.

[0083] In addition, the substrate processing apparatus 1 may also include a lower surface supply unit (not shown) that supplies the processing liquid to the periphery of the lower surface of the substrate W, a heating mechanism (not shown) that supplies the heated fluid to the lower surface of the substrate W, and the like.

[0084] The control device 6 is, for example, a computer and has a storage unit 6a and a control unit 6b.

[0085] The storage unit 6a is implemented by, for example, semiconductor storage elements such as RAM and flash memory, or storage devices such as hard disks and optical disks, and stores programs for controlling various processes executed in the substrate processing apparatus 1.

[0086] The control unit 6b includes a microcomputer having a CPU (Central Processing Unit), a ROM (ReadOnly Memory), a RAM (Random Access Memory), input / output ports, and various circuits. The control unit 6b controls the operation of the substrate processing apparatus 1 by reading and executing the programs stored in the storage unit 6a.

[0087] In addition, the programs may also be stored in a computer-readable storage medium and installed from the storage medium into the storage unit 6a of the control device 6. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), memory cards, and the like.

[0088] <Processing liquid supply unit>

[0089] Next, with reference toFigure 2 and Figure 3 , illustrating the processing liquid supply unit 12. Figure 2 is a perspective view of the processing liquid supply unit 12 of the first embodiment. Figure 3 is a top view of the processing liquid supply unit 12 of the first embodiment. In addition, Figure 2 and Figure 3 the processing liquid supply unit 12 is the processing liquid supply unit 12 provided on the right arm 5R.

[0090] The processing liquid supply unit 12 includes a nozzle mounting block 20 and a processing liquid discharge nozzle 21. The nozzle mounting block 20 is mounted at the front end of the arm portion 10. That is, the nozzle mounting block 20 (an example of a fixing member) is mounted on the arm portion 10. The processing liquid supply pipe 5a provided on the arm 5 is connected to the nozzle mounting block 20. As Figure 4 shown, a processing liquid supply passage 20a is formed in the nozzle mounting block 20. The processing liquid supplied from the processing liquid supply pipe 5a flows in the processing liquid supply passage 20a. Figure 4 is Figure 3 the IV-IV cross-sectional view of

[0091] A first recess 20b, a second recess 20c, and a third recess 20d are formed in the nozzle mounting block 20. The first recess 20b is formed to be recessed downward from the upper surface of the nozzle mounting block 20. A through hole 20e is formed at the bottom of the first recess 20b. A screw (bolt) 22 for fixing the processing liquid discharge nozzle 21 to the nozzle mounting block 20 can be inserted into the through hole 20e.

[0092] As Figure 3 shown, a plurality of through holes 20e are provided for one processing liquid discharge nozzle 21. For example, two through holes 20e are provided for one processing liquid discharge nozzle 21. In addition, the number of through holes 20e for one processing liquid discharge nozzle 21 is not limited to two. For example, the number of through holes 20e for one processing liquid discharge nozzle 21 can be three or more.

[0093] As Figure 4 shown, the second recess 20c is formed to be recessed upward from the lower surface of the nozzle mounting block 20. The second recess 20c is formed around the through hole 20e. The second recess 20c communicates with the first recess 20b through the through hole 20e. The mounting portion 32a of the processing liquid discharge nozzle 21 described later can be inserted into the second recess 20c.

[0094] The second recess 20c and the through hole 20e are arranged such that the angle of the processing liquid discharge nozzle 21 in the horizontal direction can be changed with respect to the nozzle mounting block 20. Specifically, a plurality of second recesses 20c are arranged in a manner capable of inserting the mounting portion 32a of the processing liquid discharge nozzle 21 according to the mounting position of the processing liquid discharge nozzle 21. For example, for one processing liquid discharge nozzle 21, two second recesses 20c are provided. In addition, a part of the two second recesses 20c may be arranged overlappingly. That is, the two second recesses 20c may be arranged communicatively.

[0095] In addition, the through hole 20e is arranged such that the angle of the processing liquid discharge nozzle 21 can be changed. Specifically, two through holes 20e corresponding to one processing liquid discharge nozzle 21 are formed such that their central axes are arranged on a circle with the same radius centered on the central axis of the introduction portion 35b of the processing liquid discharge nozzle 21 described later.

[0096] The third recess 20d is formed to be recessed upward from the lower surface of the nozzle mounting block 20. The introduction portion 35b of the processing liquid discharge nozzle 21 described later can be inserted into the third recess 20d. The inner wall surface of the third recess 20d is formed in a circular shape.

[0097] The processing liquid discharge nozzle 21 moves between a standby position and a discharge position along with the movement of the arm portion 10 by the moving mechanism 11. The standby position is the position where a part of the processing liquid discharge nozzle 21 is accommodated in the notch portion 4a formed in the outer cup body 4. The standby position is the position where the substrate W can be lifted and lowered between the transfer position and the processing position by the holding portion 3. When the processing liquid discharge nozzle 21 is in the standby position, the substrate W does not contact the processing liquid discharge nozzle 21 due to the lifting and lowering of the substrate W.

[0098] The discharge position is a position radially inside the standby position with respect to the substrate W. The discharge position is the position where the processing liquid is discharged to the periphery of the substrate W by the processing liquid discharge nozzle 21.

[0099] Next, with reference to Figures 5 - 7 , the processing liquid discharge nozzle 21 will be described. Figure 5 is the front view of the processing liquid discharge nozzle 21 of the first embodiment. Figure 6 is the top view of the processing liquid discharge nozzle 21 of the first embodiment. Figure 7 is Figure 6 the VII-VII cross-sectional view of

[0100] The processing liquid discharge nozzle 21 discharges the processing liquid for substrate processing. The processing liquid discharge nozzle 21 includes a nozzle main body portion 30, a nozzle discharge portion 31, and a connection portion 32.

[0101] The nozzle main body 30 includes a first main body 35 and a second main body 36. The first main body 35 extends in the Z-axis direction. As Figure 7 shown, a first flow path 35a is formed in the first main body 35. The first flow path 35a is formed along the Z-axis direction. The first flow path 35a communicates with the processing liquid supply passage 20a (refer to Figure 4 ) of the nozzle mounting block 20. That is, a first flow path 35a communicating with the processing liquid supply passage 20a is formed in the first main body 35. An introduction portion 35b capable of inserting the nozzle mounting block 20 into the third concave portion 20d (refer to Figure 4 ) is provided in the upper first main body 35. The outer wall surface of the introduction portion 35b is formed in a circular shape.

[0102] An O-ring 38 (refer to Figure 4 ) is provided between the introduction portion 35b and the third concave portion 20d of the nozzle mounting block 20. The O-ring 38 prevents the processing liquid from leaking between the first main body 35 and the nozzle mounting block 20.

[0103] The second main body 36 is provided so as to be bent with respect to the first main body 35 and extends obliquely downward from the lower end of the first main body 35. Specifically, the second main body 36 extends obliquely downward corresponding to the rotation direction of the substrate W.

[0104] In addition, among the processing liquid discharge nozzles 21 provided on the left arm 5L and the processing liquid discharge nozzles 21 provided on the right arm 5R, each second main body 36 extends obliquely downward from the lower end of the first main body 35 corresponding to the rotation direction of the substrate W. Therefore, among the processing liquid discharge nozzles 21 provided on the left arm 5L and the processing liquid discharge nozzles 21 provided on the right arm 5R, the extending directions of the respective second main bodies 36 are, for example, opposite directions in the Y-axis direction.

[0105] As Figure 7 shown, a second flow path 36a is formed in the second main body 36. The second flow path 36a extends obliquely downward from the lower end of the first flow path 35a. The second flow path 36a communicates with the first flow path 35a. As described above, the second main body 36 forms a second flow path 36a communicating with the first flow path 35a and is bent with respect to the first main body 35.

[0106] In addition, a concave portion 36b is formed in the second main body 36. The concave portion 36b is formed to be recessed from the lower end side of the second main body 36 toward the first main body 35. The nozzle discharge portion 31 can be inserted into the concave portion 36b. A thread groove is formed in a part of the inner wall surface of the concave portion 36b.

[0107] The nozzle discharge portion 31 discharges the processing liquid to the periphery of the substrate W. The nozzle discharge portion 31 extends along the extending direction of the second main body 36. That is, the nozzle discharge portion 31 extends obliquely downward along the second main body 36.

[0108] The nozzle release portion 31 is inserted into the recess 36b of the second main body portion 36 to be mounted on the nozzle main body portion 30. The nozzle release portion 31 is detachable from the front end of the second main body portion 36.

[0109] An insertion portion 31a into which the recess 36b of the second main body portion 36 can be inserted is formed with a thread in the nozzle release portion 31. The thread is formed corresponding to a thread groove formed on the inner wall surface of the recess 36b. The nozzle release portion 31 can be screwed to the nozzle main body portion 30.

[0110] An O-ring 39 is provided between the insertion portion 31a of the nozzle release portion 31 and the second main body portion 36. The O-ring 39 prevents the processing liquid from leaking between the nozzle release portion 31 and the second main body portion 36.

[0111] A release flow path 31b communicating with the second flow path 36a is formed in the nozzle release portion 31. The diameter of the release flow path 31b is smaller than the diameter of the second flow path 36a. Specifically, the diameter of the inner wall surface 31c of the release flow path 31b is smaller than the diameter of the inner wall surface 36c of the second flow path 36a. In addition, the diameter of the inner wall surface 31c of the release flow path 31b is smaller than the diameter of the inner wall surface 35c of the first flow path 35a.

[0112] In addition, a release port 31d is formed at the front end of the nozzle release portion 31. The release port 31d communicates with the release flow path 31b and releases the processing liquid to the substrate W. The diameter of the release port 31d is smaller than the diameter of the release flow path 31b. Specifically, the diameter of the inner wall surface 31e of the release port 31d is smaller than the diameter of the inner wall surface 31c of the release flow path 31b.

[0113] The diameter of the release flow path 31b and the diameter of the release port 31d are set according to the type of processing, the type of processing liquid to be released, etc. That is, in the processing liquid discharge nozzle 21, the nozzle release portion 31 mounted on the nozzle main body portion 30 can be replaced according to the type of processing, the type of processing liquid to be released, etc.

[0114] As described above, a release flow path 31b communicating with the second flow path 36a is formed in the nozzle release portion 31, and the processing liquid is released to the periphery of the substrate W. That is, the processing liquid discharge nozzle 21 releases the processing liquid to the periphery of the substrate W.

[0115] As Figure 5 and Figure 6 shown, the connecting portion 32 extends in the horizontal direction with respect to the first main body portion 35. The connecting portion 32 is integrally provided with the first main body portion 35. An installation portion 32a protruding upward is provided on the connecting portion 32. As Figure 6 shown, a screw 22 (refer to Figure 4)The inserted screw hole 32b. Thread grooves corresponding to the thread teeth of the screw 22 are formed on the inner wall surface of the screw hole 32b. The connecting portion 32 can be screwed with the screw 22. By screwing the screw 22, the nozzle body portion 30 can be fixed to the nozzle mounting block 20.

[0116] <Change in the release angle of the processing liquid by the processing liquid release nozzle>

[0117] Regarding the processing liquid release nozzle 21, by rotating about the introduction portion 35b inserted into the third recess 20d of the nozzle mounting block 20, the processing liquid release nozzle 21 can be rotated relative to the nozzle mounting block 20 in the horizontal direction. Moreover, regarding the processing liquid release nozzle 21, by changing the position of the second recess 20c into which the mounting portion 32a of the connecting portion 32 is inserted, the mounting position relative to the nozzle mounting block 20 can be changed. That is, the connecting portion 32 (an example of an angle changing mechanism) can change the mounting position relative to the nozzle mounting block 20 (an example of a fixing member). In other words, the connecting portion 32 can change the angle of the nozzle body portion 30 in the horizontal direction relative to the nozzle mounting block 20 (an example of a fixing member) that fixes the nozzle body portion 30.

[0118] By changing the mounting position of the nozzle body portion 30 relative to the nozzle mounting block 20, the release angle of the processing liquid relative to the nozzle mounting block 20 can be changed. That is, the processing liquid release nozzle 21 can change the release angle of the processing liquid relative to the substrate W. The release angle is the angle in the horizontal direction relative to the tangent of the substrate W at the position where the processing liquid released by the processing liquid release nozzle 21 collides with the substrate W.

[0119] <Change in the rotation angle by the arm>

[0120] Regarding the arm 5, the arm portion 10 can be rotated about the axis in the Z-axis direction by the moving mechanism 11. That is, the moving mechanism 11 (an example of a rotating mechanism) can rotate the arm portion 10 in the horizontal direction. Therefore, for example, when releasing the processing liquid onto the substrate W, that is, during substrate processing, by rotating the arm portion 10 and changing the rotation angle, the release angle of the processing liquid relative to the substrate W can be changed. In addition, the substrate processing can also be performed without rotating the arm portion 10 during substrate processing.

[0121] Here, refer to Figure 8 , and describe the processing for changing the release angle of the processing liquid by the arm 5. Figure 8 is a flowchart for explaining the release angle change processing of the first embodiment. The release angle change processing is implemented by controlling the processing liquid release nozzle 21 and the holding portion 3 by the control portion 6b of the control device 6.

[0122] The control unit 6b sets the initial angle of the arm portion 10 according to each type of processing of the substrate W (S100). That is, the control unit 6b sets the rotation angle in the moving mechanism 11 (an example of a rotation mechanism) according to each type of substrate processing.

[0123] The control unit 6b rotates the arm portion 10 according to the set initial angle (S101), and starts releasing the processing liquid from the processing liquid discharge nozzle 21 at the initial angle (S102). That is, the control unit 6b discharges the processing liquid onto the substrate W according to the set rotation angle.

[0124] The control unit 6b determines whether it has become the angle change time (S103). For example, the control unit 6b determines whether a predetermined first time has elapsed after starting to discharge the processing liquid. The predetermined first time is a preset time.

[0125] When it is not the angle change time (S103: No), the control unit 6b continues to discharge the processing liquid at the initial angle (S102).

[0126] When it has become the angle change time (S103: Yes), the control unit 6b sets the angle of the arm portion 10 to a predetermined change angle (S104). The predetermined change angle is a preset angle. The control unit 6b rotates the arm portion 10 according to the set predetermined change angle (S105). That is, the control unit 6b changes the rotation angle during substrate processing.

[0127] The control unit 6b determines whether it has become the processing end time (S106). For example, the control unit 6b determines whether a predetermined second time has elapsed after changing the angle of the arm portion 10 to the predetermined change angle. The predetermined second time is a preset time.

[0128] When it is not the processing end time (S106: No), the control unit 6b continues the processing at the predetermined change angle (S105). When it has become the processing end time (S106: Yes), the control unit 6b ends the discharge of the processing liquid (S107).

[0129] <Effect>

[0130] The processing liquid discharge nozzle 21 includes a nozzle main body portion 30 and a connecting portion 32 (an example of an angle changing mechanism). The nozzle main body portion 30 includes a first main body portion 35 and a second main body portion 36. A first flow path 35a communicating with the processing liquid supply path 20a is formed in the first main body portion 35. The second main body portion 36 forms a second flow path 36a and is bent relative to the first main body. The connecting portion 32 changes the angle of the nozzle main body portion 30 in the horizontal direction with respect to the nozzle mounting block 20 (an example of a fixing member) that fixes the nozzle main body portion 30. Specifically, the connecting portion 32 can change the mounting position with respect to the nozzle mounting block 20.

[0131] Thus, the processing liquid discharge nozzle 21 can change the discharge angle of the processing liquid according to each type of processing of the substrate W, such as the type of film on the substrate W and the type of processing liquid to be discharged onto the substrate W. Therefore, the processing liquid discharge nozzle 21 can, for example, prevent the processing liquid used for etching the periphery of the substrate W from colliding with the substrate W and scattering. Thus, it is possible to prevent the scattered processing liquid from adhering to the portions where etching is not performed, and it is possible to suppress the generation of particles.

[0132] In addition, the processing liquid discharge nozzle 21 includes a nozzle discharge portion 31. The nozzle discharge portion 31 forms a discharge flow path 31b that communicates with the second flow path 36a, and discharges the processing liquid onto the substrate W. In addition, the nozzle discharge portion 31 is detachable from the front end of the second main body portion 36.

[0133] Thus, the processing liquid discharge nozzle 21 can replace the nozzle discharge portion 31 according to each type of processing of the substrate W. Therefore, the processing liquid discharge nozzle 21 can, for example, etch the periphery of the substrate W with high precision. In addition, for example, when the processing liquid accumulates at the discharge port 31d of the nozzle discharge portion 31, the substrate processing can be easily restored by replacing the nozzle discharge portion 31.

[0134] In addition, the processing liquid discharge nozzle 21 can reduce the bubbles generated when the processing liquid flows from the first flow path 35a to the second flow path 36a during the period when the processing liquid flows through the discharge flow path 31b. Therefore, the processing liquid discharge nozzle 21 can suppress the inclusion of bubbles in the processing liquid discharged onto the substrate W, and can stabilize the discharge state of the processing liquid.

[0135] In addition, the diameter of the discharge flow path 31b is smaller than the diameter of the second flow path 36a.

[0136] Thus, the processing liquid discharge nozzle 21 can suppress the generation of bubbles when the processing liquid flows from the second flow path 36a into the discharge flow path 31b. Therefore, the processing liquid discharge nozzle 21 can suppress the inclusion of bubbles in the processing liquid discharged onto the substrate W, and can stabilize the discharge state of the processing liquid.

[0137] In addition, the arm 5 (an example of a nozzle arm) includes a processing liquid discharge nozzle 21, a nozzle mounting block 20 (an example of a fixing member), an arm portion 10, and a moving mechanism 11 (an example of a rotating mechanism). The fixing member is mounted on the arm portion 10. The moving mechanism 11 rotates the arm portion 10 in the horizontal direction. The substrate processing apparatus 1 sets the rotation angle in the moving mechanism 11 according to each substrate processing, and discharges the processing liquid onto the substrate W at the set rotation angle.

[0138] Thus, the substrate processing apparatus 1 can discharge the processing liquid according to the discharge angle corresponding to the substrate processing, and can etch the periphery of the substrate W with high precision.

[0139] In addition, the substrate processing apparatus 1 changes the rotation angle during substrate processing.

[0140] Thereby, the substrate processing apparatus 1 can uniformly release the processing liquid to the peripheral edge of the substrate W, and can etch the peripheral edge of the substrate W with high precision.

[0141] (Second Embodiment)

[0142] Next, the substrate processing apparatus 1 of the second embodiment will be described. The processing liquid supply unit 50 of the substrate processing apparatus 1 of the second embodiment is different from that of the substrate processing apparatus 1 of the first embodiment. Therefore, the processing liquid supply unit 50 of the second embodiment will be described here. In addition, the same reference numerals are given to the parts that are the same as those of the processing liquid supply unit 12 of the first embodiment, and the detailed description thereof is omitted.

[0143] <Processing Liquid Supply Unit>

[0144] As Figure 9 shown, in the nozzle mounting block 51 of the processing liquid supply unit 50, one through hole 20e is provided for one processing liquid discharge nozzle 52. Figure 9 is a top view of the processing liquid supply unit 50 of the second embodiment. In addition, Figure 9 the processing liquid supply unit 50 is the processing liquid supply unit 50 provided on the right arm 5R.

[0145] As Figure 10 and Figure 11 shown, in the processing liquid discharge nozzle 52, the nozzle main body portion 53 and the connection portion 54 are separately provided. Figure 10 is a top view of the processing liquid discharge nozzle 52 of the second embodiment. Figure 11 is Figure 10 a cross-sectional view taken along line XI-XI of

[0146] As Figure 11 shown, in the first main body portion 55, an engaging groove 55a is formed. The engaging groove 55a is formed below the introducing portion 35b. The engaging groove 55a is formed over the entire circumference of the first main body portion 55. By forming the engaging groove 55a, an engaging portion 55b is formed between the introducing portion 35b and the engaging groove 55a in the first main body portion 55. The diameter of the outer wall surface of the engaging portion 55b is larger than the diameter of the outer wall surface of the introducing portion 35b.

[0147] The connecting portion 54 has a pair of arms 54a. The pair of arms 54a are inserted into the engaging grooves 55a to clamp the first main body portion 55. The first main body portion 55 can rotate in the horizontal direction while being clamped by the pair of arms 54a. That is, the connecting portion 54 (an example of an angle changing mechanism) supports the first main body portion 55 in a rotatable manner. In addition, the upper surface of the arm 54a abuts against the engaging portion 55b of the first main body portion 55. That is, the pair of arms 54a engage with the engaging portion 55b.

[0148] In addition, as Figure 12 shown, a position alignment portion 60 is provided on the first main body portion 55 and the connecting portion 54. Figure 12 is a perspective view of the processing liquid discharge nozzle 52 of the second embodiment as viewed obliquely from below. The position alignment portion 60 includes a first position alignment groove 60a and a second position alignment groove 60b.

[0149] The first position alignment groove 60a is formed in the first main body portion 55. The first position alignment groove 60a is formed in the first main body portion 55 below the engaging groove 55a (refer to Figure 11 ). A plurality of first position alignment grooves 60a are formed on the outer wall surface of the first main body portion 55. Specifically, a plurality of first position alignment grooves 60a are formed along the circumferential direction of the first main body portion 55.

[0150] The second position alignment groove 60b is formed in the connecting portion 54. For example, the second position alignment groove 60b can be formed to penetrate the connecting portion 54 in the Z-axis direction.

[0151] When the connecting portion 54 is fixed to the nozzle mounting block 51 with the screw 22, as Figure 13 shown, the engaging portion 55b of the first main body portion 55 is clamped by the arm 54a of the connecting portion 54 and the nozzle mounting block 51 in the Z-axis direction. Thus, the nozzle main body portion 53 is fixed relative to the nozzle mounting block 51. Figure 13 is Figure 9 the XIII-XIII cross-sectional view of

[0152] <Change of the discharge angle of the processing liquid by the processing liquid discharge nozzle>

[0153] In a state where the nozzle main body 53 is not fixed to the nozzle mounting block 51 by the screw 22, the first main body 55 can be rotated relative to the connecting portion 54 in the horizontal direction. For example, in the processing liquid discharge nozzle 52, by changing the position where the first position alignment groove 60a of the first main body 55 aligns with the second position alignment groove 60b of the connecting portion 54, the discharge angle of the processing liquid relative to the nozzle mounting block 51 can be changed. That is, the nozzle main body 53 and the connecting portion 54 have a position alignment portion 60 that can change the angle of the nozzle main body 53 in the horizontal direction relative to the nozzle mounting block 51 (an example of a fixing member).

[0154] <Effect>

[0155] In the processing liquid discharge nozzle 52, the connecting portion 54 (an example of an angle changing mechanism) supports the first main body 55 in a rotatable manner.

[0156] Thereby, the processing liquid discharge nozzle 52 can change the discharge angle of the processing liquid according to each process on the substrate W, for example, the type of film on the substrate W and the type of processing liquid discharged from the substrate W. Therefore, the generation of particles can be suppressed.

[0157] In addition, the first main body 55 and the connecting portion 54 include a position alignment portion 60. The position alignment portion 60 can change the angle of the nozzle main body 53 in the horizontal direction relative to the nozzle mounting block 51 (an example of a fixing member).

[0158] Thereby, based on the position alignment portion 60, the operator can easily align the angle of the first main body 55 in the horizontal direction with the position of the connecting portion 54 fixed to the nozzle mounting block 51. Therefore, the operator can easily set the discharge angle of the processing liquid.

[0159] <Modification of the Second Embodiment>

[0160] In the modified processing liquid discharge nozzle 52, as the position alignment portion 60, a position alignment groove may be provided in one of the first main body 55 and the connecting portion 54, and a protruding piece that can be inserted into the position alignment groove may be provided in the other of the first main body 55 and the connecting portion 54.

[0161] Thereby, the modified processing liquid discharge nozzle 52 can suppress the rotation of the first main body 55 relative to the connecting portion 54. Therefore, the modified processing liquid discharge nozzle 52 can suppress the discharge angle of the processing liquid from deviating from the set discharge angle.

[0162] (Third Embodiment)

[0163] Next, the substrate processing apparatus 1 of the third embodiment will be described. The processing liquid supply unit 70 of the substrate processing apparatus 1 of the third embodiment is different from that of the substrate processing apparatus 1 of the second embodiment. Therefore, the processing liquid supply unit 70 of the third embodiment will be described here. In addition, the same reference numerals are given to the same parts as the processing liquid supply unit 12 of the first embodiment and the processing liquid supply unit 50 of the second embodiment, and detailed descriptions thereof are omitted.

[0164] <Processing liquid supply unit>

[0165] As Figure 14 shown, the processing liquid supply unit 70 further includes a gas discharge nozzle 71. Figure 14 is a top view of the processing liquid supply unit 70 of the third embodiment. In addition, Figure 14 the processing liquid supply unit 70 is the processing liquid supply unit 70 provided on the left arm 5L.

[0166] The gas discharge nozzle 71 is attached to the nozzle mounting block 51. The gas discharge nozzle 71 is arranged inside the processing liquid discharge nozzle 52. Specifically, the gas discharge nozzle 71 is arranged inside the processing liquid discharge nozzle 52 in the radial direction of the substrate W.

[0167] The gas discharge nozzle 71 discharges gas such as nitrogen to the outside. The gas discharge nozzle 71 discharges gas, and the gas discharges the processing liquid that collides with the substrate W and scatters above the substrate W to a position outside the substrate W.

[0168] The gas discharge nozzle 71 discharges gas at a discharge angle larger than that of the processing liquid in the horizontal direction. Specifically, as Figure 15 shown, the gas discharge nozzle 71 discharges gas at a discharge angle A2 larger than the discharge angle A1 of the processing liquid. The discharge angle A1 of the processing liquid is the discharge angle of the processing liquid relative to the tangent S of the substrate W at the position T where the processing liquid discharged from the processing liquid discharge nozzle 52 collides with the substrate W. That is, the gas discharge nozzle 71 discharges gas at a discharge angle A2 larger than the discharge angle A1 of the processing liquid relative to the substrate tangent in the horizontal direction. Figure 15 is a schematic diagram illustrating the arrangement of the processing liquid discharge nozzle 52 and the gas discharge nozzle 71 of the third embodiment.

[0169] In addition, the gas discharge nozzle 71 discharges gas above the substrate W. Specifically, the gas discharge nozzle 71 discharges gas above the position where the processing liquid discharged from the processing liquid discharge nozzle 52 collides with the substrate W. In addition, the gas discharge nozzle 71 may also discharge gas above a position slightly downstream in the rotation direction of the substrate W compared to the position where the processing liquid discharged from the processing liquid discharge nozzle 52 collides with the substrate W.

[0170] <Effect>

[0171] The processing liquid supply unit 70, i.e., the arm 5, includes a gas release nozzle 71. The gas release nozzle 71 releases gas, and the gas discharges the processing liquid that collides with the substrate W and scatters above the substrate W to the outside of the substrate W.

[0172] Thereby, the arm 5 can suppress the processing liquid that collides with the substrate W and scatters from adhering to the radially inner side of the substrate W. Therefore, the arm 5 can suppress the scattered processing liquid from adhering to the portions where etching is not performed, and can suppress the generation of particles.

[0173] In addition, the gas release nozzle 71 is arranged inside the processing liquid release nozzle 52.

[0174] Thereby, the gas release nozzle 71 can discharge the processing liquid that collides with the substrate W and scatters to the outside of the substrate W. Therefore, the arm 5 can suppress the scattered processing liquid from adhering to the portions where etching is not performed, and can suppress the generation of particles.

[0175] In addition, the gas release nozzle 71 releases gas at a release angle larger than the release angle of the processing liquid in the horizontal direction.

[0176] Thereby, the arm 5 can discharge the processing liquid that has just scattered after colliding with the substrate W to the outside of the substrate W. Therefore, the arm 5 can suppress the scattered processing liquid from adhering to the portions where etching is not performed, and can suppress the generation of particles.

[0177] In addition, the gas release nozzle 71 releases gas above the substrate W.

[0178] Thereby, the arm 5, for example, suppresses discharging the processing liquid that is released to the periphery of the substrate W and adheres to the periphery of the substrate W to the outside of the substrate W, and can promote the etching process of the periphery of the substrate W.

[0179] (Fourth Embodiment)

[0180] Next, with reference to Figures 16 - 18 , the substrate processing apparatus 1 of the fourth embodiment will be described. Here, the description will be centered on the differences from the substrate processing apparatus 1 of the first embodiment, and the same reference numerals will be given to the same parts as those of the substrate processing apparatus 1 of the first embodiment, and the detailed description thereof will be omitted. Figure 16 FIG. is a perspective view showing a part of the substrate processing apparatus 1 of the fourth embodiment. Figure 17 FIG. is a schematic view showing a state where the processing liquid release nozzle 21 is in the standby position in the substrate processing apparatus 1 of the fourth embodiment. Figure 18 FIG. is a schematic view showing a state where the processing liquid release nozzle 21 is in the release position in the substrate processing apparatus 1 of the fourth embodiment. In addition, here, the right arm 5R side is taken as an example for description, but the left arm 5L side also has the same configuration.

[0181] The substrate processing apparatus 1 further includes a first conduction part 90 and a second conduction part 91. The first conduction part 90 can come into contact with the processing liquid discharge nozzle 21 and conduct with the processing liquid discharge nozzle 21. The first conduction part 90 is mounted on the processing liquid discharge nozzle 21. For example, the first conduction part 90 is mounted on the first main body part 35 of the processing liquid discharge nozzle 21. The first conduction part 90 is a conductive member, for example, a carbon-containing resin. The first conduction part 90 moves together with the processing liquid discharge nozzle 21. The processing liquid discharge nozzle 21 and the first conduction part 90 are moved in the X direction (refer to Figure 1 ) by a moving mechanism 11 (refer to Figure 1 ).

[0182] A hole in which the first main body part 35 can slide is formed in the first conduction part 90. That is, in a state where the processing liquid discharge nozzle 21 is in contact with the first main body part 35, the substrate processing apparatus 1 can rotate the processing liquid discharge nozzle 21 relative to the nozzle mounting block 20, and can change the discharge angle of the processing liquid relative to the nozzle mounting block 20. The first conduction part 90 forms a hole by aligning the positions of two or more components. That is, the first conduction part 90 is constituted by combining two or more components. In addition, the first conduction part 90 may also be constituted by one component. For example, a notch communicating with the hole may be formed in the first conduction part 90, and the first main body part 35 is inserted into the hole via the notch.

[0183] The second conduction part 91 can conduct with the processing liquid discharge nozzle 21 by coming into contact with the first conduction part 90, and can remove the static electricity of the processing liquid discharge nozzle 21. The second conduction part 91 is a conductive member, for example, a carbon-containing thin film. The second conduction part 91 is provided on the outer cup body 4 (an example of a cup body part). The second conduction part 91 includes a main body part 91a and a deformed part 91b.

[0184] The main body part 91a is provided along the upper surface of the outer cup body 4. One end of the main body part 91a is provided adjacent to the notch part 4a of the outer cup body 4. In addition, the other end of the main body part 91a is connected to a conductive member (for example, a metal member) outside the processing container 2 (refer to Figure 1 ). In addition, the main body part 91a may also be connected to a conductive member outside the processing container 2 via an intermediate member. The intermediate member is a conductive member.

[0185] The deformed portion 91b is connected to the main body portion 91a. The deformed portion 91b is arranged to extend obliquely upward from one end of the main body portion 91a toward the notch portion 4a side. The deformed portion 91b is arranged to protrude inward from the main body portion 91a in the radial direction of the substrate W. That is, the deformed portion 91b is supported by the main body portion 91a in a cantilever state. The deformed portion 91b can contact the first conduction portion 90. The deformed portion 91b can elastically deform with respect to the main body portion 91a. In addition, the deformed portion 91b is not limited to the shape supported by the main body portion 91a in a cantilever state, as long as it can elastically deform with respect to the main body portion 91a.

[0186] When the first conduction portion 90 is in the contact position, the deformed portion 91b contacts the first conduction portion 90. When the first conduction portion 9 is in the non-contact position, the deformed portion 91b does not contact the first conduction portion 90.

[0187] The contact position includes, for example, the standby position. When the processing liquid discharge nozzle 21 is in the standby position, the deformed portion 91b contacts the first conduction portion 90. When the processing liquid discharge nozzle 21 is in the standby position, the first conduction portion 90 contacts the second conduction portion 91, forming a conduction path of the conductive member from the processing liquid discharge nozzle 21 to the outside of the processing container 2. By making the processing liquid discharge nozzle 21 conduct with the conductive member outside the processing container 2, the processing liquid discharge nozzle 21 is decharged.

[0188] The non-contact position includes, for example, the discharge position. When the processing liquid discharge nozzle 21 is in the discharge position, the deformed portion 91b does not contact the first conduction portion 90. That is, when the processing liquid discharge nozzle 21 is in the discharge position, the first conduction portion 90 does not contact the second conduction portion 91, and a conduction path of the conductive member from the processing liquid discharge nozzle 21 to the outside of the processing container 2 is not formed.

[0189] The first conduction portion 90 moves together with the processing liquid discharge nozzle 21 through the moving mechanism 11 (refer to Figure 1 ). That is, the moving mechanism 11 switches the positions of the processing liquid discharge nozzle 21 and the first conduction portion 90 to the contact position where the first conduction portion 90 contacts the second conduction portion 91 and the non-contact position where the first conduction portion 90 does not contact the second conduction portion 91.

[0190] When the processing liquid discharge nozzle 21 moves from the non-contact position (discharge position) to the contact position (standby position), the first conduction part 90 comes into contact with the deformed part 91b of the second conduction part 91. The deformed part 91b is pressed by the first conduction part 90 and rotates with the main body part 91a as a fulcrum, and deforms starting from a position where it does not contact the first conduction part 90 (hereinafter referred to as the "initial position"). Thereby, it is possible to suppress the impact when the first conduction part 90 contacts the second conduction part 91. In addition, since the deformed part 91b can be elastically deformed relative to the main body part 91a, the contact state between the first conduction part 90 and the second conduction part 91 can be maintained.

[0191] When the processing liquid discharge nozzle 21 moves from the contact position (standby position) to the non-contact position (discharge position), the first conduction part 90 is separated from the deformed part 91b of the second conduction part 91. Since the deformed part 91b of the second conduction part 91 is not pressed by the first conduction part 90, it rotates with the main body part 91a as a fulcrum and returns to the initial position.

[0192] <Effect>

[0193] There is a problem that the processing liquid discharged from the processing liquid discharge nozzle 21 adheres to the processing liquid discharge nozzle 21 due to the charging of the processing liquid discharge nozzle 21. There is a possibility that the processing liquid droplets adhering to the processing liquid discharge nozzle 21 fall onto the substrate W or the like, resulting in particles. In addition, there is a possibility that the processing liquid discharged from the processing liquid discharge nozzle 21 is guided to the processing liquid discharge nozzle 21 side and drips onto the substrate W or the like, resulting in particles.

[0194] The substrate processing apparatus 1 includes a processing liquid discharge nozzle 21, a first conduction part 90, a second conduction part 91, and a moving mechanism 11. The first conduction part 90 can come into contact with the processing liquid discharge nozzle 21 and be electrically connected to the processing liquid discharge nozzle 21. The second conduction part 91 can be electrically connected to the processing liquid discharge nozzle 21 by coming into contact with the first conduction part 90, and the processing liquid discharge nozzle 21 is de-energized. The moving mechanism 11 can switch the positions of the processing liquid discharge nozzle 21 and the first conduction part 90 to a contact position where the first conduction part 90 contacts the second conduction part 91 and a non-contact position where the first conduction part 90 does not contact the second conduction part 91.

[0195] Thus, the substrate processing apparatus 1 can suppress the charging of the processing liquid discharge nozzle 21 by bringing the first conduction part 90 into contact with the second conduction part 91 at the contact position. Therefore, the substrate processing apparatus 1 can suppress the adhesion of the processing liquid to the processing liquid discharge nozzle 21. In addition, the substrate processing apparatus 1 can suppress the processing liquid discharged from the processing liquid discharge nozzle 21 from being guided to the processing liquid discharge nozzle 21. Therefore, the substrate processing apparatus 1 can suppress the generation of particles.

[0196] The second conduction part 91 includes a deformation part 91b. The deformation part 91b deforms when it comes into contact with the first conduction part 90.

[0197] Thus, the substrate processing apparatus 1 can suppress the impact when the first conduction part 90 comes into contact with the second conduction part 91. Therefore, the substrate processing apparatus 1 can suppress the deterioration of the first conduction part 90 and the second conduction part 91. In addition, the substrate processing apparatus 1 can maintain the first conduction part 90 and the second conduction part 91 in a contact state at the contact position by deforming the deformation part 91b.

[0198] The substrate processing apparatus 1 includes a holding part 3 and an outer cup body 4 (an example of a cup body part). The holding part 3 holds the substrate W when performing substrate processing. The outer cup body 4 is provided so as to surround the outside of the substrate W held by the holding part 3. The second conduction part 91 is provided on the outer cup body 4.

[0199] Thus, in the substrate processing apparatus 1, the arrangement of the second conduction part 91 becomes easy.

[0200] <Modification Example of the Fourth Embodiment>

[0201] In the substrate processing apparatus 1 of the modification example, a deformation part may be provided on the first conduction part 90, or deformation parts may be provided on both the first conduction part 90 and the second conduction part 91. That is, at least one of the first conduction part 90 and the second conduction part 91 has a deformation part that deforms when it comes into contact with the other conduction part.

[0202] Thus, the substrate processing apparatus 1 of the modification example can suppress the impact when the first conduction part 90 comes into contact with the second conduction part 91. Therefore, the substrate processing apparatus 1 of the modification example can suppress the deterioration of the first conduction part 90 and the second conduction part 91. In addition, the substrate processing apparatus 1 of the modification example can maintain the first conduction part 90 and the second conduction part 91 in a contact state at the contact position by deforming the deformation part.

[0203] (Fifth Embodiment)

[0204] Refer to Figure 19 and Figure 20 to describe the substrate processing apparatus 1 of the fifth embodiment. The first conduction part 95 and the second conduction part 96 of the substrate processing apparatus 1 of the fifth embodiment are different from those of the substrate processing apparatus 1 of the fourth embodiment. Here, the description will focus on the differences from the substrate processing apparatus 1 of the fourth embodiment. Figure 19 is a schematic diagram showing a state in which the first conduction part 95 is in a non-contact position in the substrate processing apparatus 1 of the fifth embodiment. Figure 20 is a schematic diagram showing a state in which the first conduction part 95 is in a contact position in the substrate processing apparatus 1 of the fifth embodiment.

[0205] The first conduction part 95 includes a main body part 95a and a wrist part 95b. The main body part 95a is mounted on the processing liquid discharge nozzle 21 and contacts the processing liquid discharge nozzle 21. For example, the main body part 95a contacts the first main body part 35 of the processing liquid discharge nozzle 21. A hole in which the first main body part 35 can slide is formed in the main body part 95a.

[0206] The wrist part 95b is provided so as to extend upward from the main body part 95a. The wrist part 95b is provided such that the upper end of the wrist part 95b is higher than the upper ends of the nozzle mounting block 20 and the arm part 10.

[0207] The second conduction part 96 is provided in the processing container 2. Specifically, at least a part of the second conduction part 96 is provided at the top of the processing container 2. The second conduction part 96 includes a main body part 96a and a deformation part 96b. One end of the main body part 96a is provided near the upper side of the standby position of the processing liquid discharge nozzle 21.

[0208] The deformation part 96b is provided so as to extend obliquely downward from one end of the main body part 96a. The deformation part 96b is supported by the main body part 96a in a cantilever state. The deformation part 96b can rotate in the vertical direction with respect to the main body part 96a.

[0209] The deformation part 96b contacts the first conduction part 95 when the first conduction part 95 is in the contact position. The contact position is the position where the processing liquid discharge nozzle 21 moves upward from the standby position.

[0210] The deformation part 96b does not contact the first conduction part 95 when the first conduction part 95 is in the non-contact position. The non-contact position includes, for example, the release position and the standby position.

[0211] The moving mechanism 11 (refer to Figure 1 ) switches the positions of the processing liquid discharge nozzle 21 and the first conduction part 95 to the contact position and the non-contact position by raising and lowering the processing liquid discharge nozzle 21 and the first conduction part 95.

[0212] When the processing liquid discharge nozzle 21 moves upward from the standby position, the wrist part 95b of the first conduction part 95 contacts the deformation part 96b of the second conduction part 96. The deformation part 96b is pushed up by the wrist part 95b and rotates upward from the initial position about the main body part 96a side as a fulcrum and deforms.

[0213] When the processing liquid discharge nozzle 21 moves downward from the contact position, the wrist part 95b of the first conduction part 95 separates from the deformation part 96b of the second conduction part 96. The deformation part 96b of the second conduction part 96 rotates downward about the main body part 96a side as a fulcrum and returns to the initial position.

[0214] <Effect>

[0215] The substrate processing apparatus 1 includes a processing container 2. The processing container 2 houses a processing liquid discharge nozzle 21 and a moving mechanism 11. A second conduction part 96 is provided in the processing container 2. The moving mechanism 11 can switch the positions of the processing liquid discharge nozzle 21 and the first conduction part 95 to a contact position and a non-contact position by lifting and lowering the processing liquid discharge nozzle 21 and the first conduction part 95.

[0216] Accordingly, in the substrate processing apparatus 1, connection between the second conduction part 96 provided in the processing container 2 and a conductive component outside the processing container 2 becomes easy.

[0217] <Modification Example of the Fifth Embodiment>

[0218] In the substrate processing apparatus 1 of the modification example, the arm part 95b of the first conduction part 95 may be deformed.

[0219] (Sixth Embodiment)

[0220] Refer to Figure 21 , and the substrate processing apparatus 1 of the sixth embodiment will be described. Here, the description will be centered on the differences from the substrate processing apparatus 1 of the first embodiment, and the same reference numerals will be given to the parts that are the same as those of the substrate processing apparatus 1 of the first embodiment, and the detailed description will be omitted. Figure 21 FIG. is a perspective view showing a part of the substrate processing apparatus 1 of the sixth embodiment. In addition, here, the right arm 5R is taken as an example for description, but the left arm 5L also has the same configuration.

[0221] The arm part 100 of the substrate processing apparatus 1 is a conductive component, for example, a carbon-containing resin. The arm part 100 comes into contact with the processing liquid discharge nozzle 21 and is electrically connected to the processing liquid discharge nozzle 21. Specifically, the arm part 100 includes a contact part 100a. The contact part 100a comes into contact with the processing liquid discharge nozzle 21 and is electrically connected to the processing liquid discharge nozzle 21. A hole through which the processing liquid discharge nozzle 21 can slide is formed in the contact part 100a.

[0222] The arm part 100 is connected to a conductive component (for example, a metal component) outside the processing container 2 (refer to Figure 1 ). The arm part 100 forms a conduction path from the processing liquid discharge nozzle 21 to the conductive component outside the processing container 2. The conduction path is formed regardless of the position of the processing liquid discharge nozzle 21. That is, the processing liquid discharge nozzle 21 is always de-energized via the conduction path.

[0223] <Effect>

[0224] The substrate processing apparatus 1 includes a processing liquid discharge nozzle 21 and an arm part 100. The arm part 100 comes into contact with the processing liquid discharge nozzle 21 and is electrically connected to the processing liquid discharge nozzle 21.

[0225] Thus, the substrate processing apparatus 1 discharges the processing liquid discharge nozzle 21 through the arm portion 100, and can suppress the charging of the processing liquid discharge nozzle 21. Therefore, the substrate processing apparatus 1 can suppress the generation of particles due to the charging of the processing liquid discharge nozzle 21.

[0226] (7th Embodiment)

[0227] Refer to Figure 22 , and describe the substrate processing apparatus 1 of the 7th embodiment. Here, the description will be centered on the differences from the substrate processing apparatus 1 of the 1st embodiment. The same reference numerals are assigned to the parts that are the same as those of the substrate processing apparatus 1 of the 1st embodiment, and the detailed description thereof is omitted. Figure 22 FIG. is a perspective view showing a part of the substrate processing apparatus 1 of the 7th embodiment. In addition, here, the right arm 5R is taken as an example for description. However, the left arm 5L also has the same configuration.

[0228] The substrate processing apparatus 1 includes an ionizer 101. The ionizer 101 is mounted on the arm portion 10. The ionizer 101 is provided above the processing liquid discharge nozzle 21. The ionizer 101 discharges the processing liquid discharge nozzle 21. The ionizer 101 irradiates X-rays onto the processing liquid discharge nozzle 21 to generate ions around the processing liquid discharge nozzle 21. The charged processing liquid discharge nozzle 21 is discharged by neutralizing the charge with the ions. For example, a transparent resin plate is provided on the lower surface of the ionizer 101, and X-rays are irradiated through the resin plate.

[0229] The ionizer 101 irradiates X-rays onto the processing liquid discharge nozzle 21 to discharge the processing liquid discharge nozzle 21 when the holding portion 3 does not hold the substrate W. That is, the ionizer 101 irradiates X-rays onto the processing liquid discharge nozzle 21 to discharge the processing liquid discharge nozzle 21 when there is no substrate W in the processing container 2.

[0230] <Effect>

[0231] The substrate processing apparatus 1 includes a processing liquid discharge nozzle 21 and an ionizer 101. The ionizer 101 discharges the processing liquid discharge nozzle 21.

[0232] Thus, the substrate processing apparatus 1 can suppress the charging of the processing liquid discharge nozzle 21. Therefore, the substrate processing apparatus 1 can suppress the generation of particles due to the charging of the processing liquid discharge nozzle 21.

[0233] The ionizer 101 discharges the processing liquid discharge nozzle 21 when the holding portion 3 does not hold the substrate W.

[0234] Thus, when the substrate processing apparatus 1 discharges static electricity from the processing liquid discharge nozzle 21, it can prevent the processing liquid from adhering to the substrate W.

[0235] <Modification of the Seventh Embodiment>

[0236] In the substrate processing apparatus 1 of the modification example, the ion generator 101 can generate ions inside, supply the generated ions to the processing liquid discharge nozzle 21, and discharge static electricity from the processing liquid discharge nozzle 21. The ion generator 101 supplies the generated ions to the processing liquid discharge nozzle 21 from a plurality of air supply holes provided on the lower surface.

[0237] (Modification example)

[0238] In the substrate processing apparatus 1 of the modification example, a part of the moving mechanism 11 can be arranged in the nozzle mounting blocks 20, 51 or the arm portion 10. For example, in the substrate processing apparatus 1 of the modification example, the nozzle mounting block 51 (an example of a fixing member) is rotated relative to the arm portion 10 by the moving mechanism 11 (an example of a rotating mechanism). Thus, the substrate processing apparatus 1 of the modification example can change the discharge angle of the processing liquid during substrate processing. Therefore, the substrate processing apparatus 1 of the modification example can discharge the processing liquid uniformly to the periphery of the substrate W and can etch the periphery of the substrate W with high precision.

[0239] In addition, in the substrate processing apparatus 1 of the modification example, the processing liquid supply passage 20a may not be provided in the nozzle mounting blocks 20, 51, but as Figure 23 shown, the processing liquid supply pipe 5a is directly connected to the processing liquid discharge nozzle 80. Figure 23 It is a cross-sectional view showing a part of the arm 5 of the modification example. For example, a resin nut 81 is attached to the front end of the processing liquid supply pipe 5a. In addition, a thread is formed on the first main body portion 82 of the processing liquid discharge nozzle 80 so that the resin nut 81 can be screwed.

[0240] Thus, by not providing the processing liquid supply passage 20a in the nozzle mounting blocks 20, 51, the nozzle mounting blocks 20, 51 can have a simple structure. Therefore, the cost can be reduced.

[0241] In addition, in the processing liquid discharge nozzle 52 of the modification example, the inner wall surfaces 31c, 31e of the nozzle discharge portion 31 may have higher hydrophilicity than the inner wall surface 35c of the first flow path 35a and the inner wall surface 36c of the second flow path 36a. For example, in the processing liquid discharge nozzle 52 of the modification example, a hydrophilic treatment can be performed on a part of the inner wall surfaces 31c, 31e of the discharge flow path 31b including the discharge port 31d. In addition, in the processing liquid discharge nozzle 52 of the modification example, the nozzle main body portion 30 may be made of a resin with high chemical resistance and high hydrophobicity, and the nozzle discharge portion 31 may be made of a material with higher hydrophilicity than the nozzle main body portion 30.

[0242] Accordingly, it is difficult for air bubbles to adhere to the discharge port 31d, and when discharging the processing liquid, the air bubbles are not easily discharged together with the processing liquid. Therefore, the discharge state of the processing liquid can be stabilized.

[0243] In addition, the substrate processing apparatus 1 of the modified example may be provided with a substrate position alignment mechanism on the arm 5. The substrate position alignment mechanism is provided on the left arm 5L and the right arm 5R, respectively. The substrate position alignment mechanism sandwiches the substrate W in the horizontal direction and aligns the position of the substrate W placed on the holding portion 3. Specifically, the substrate position alignment mechanism adjusts the position of the substrate W so that the center of the substrate W coincides with the rotation axis of the holding portion 3. The substrate processing apparatus 1 of the modified example holds the substrate W whose position has been adjusted by the substrate position alignment mechanism by the holding portion 3.

[0244] Accordingly, the substrate processing apparatus 1 of the modified example can etch the periphery of the substrate W with high precision.

[0245] In addition, the substrate processing apparatus 1 of each embodiment and the substrate processing apparatus 1 of the modified example may be combined. For example, the gas discharge nozzle 71 may be provided in the substrate processing apparatus 1 of the first embodiment. For example, in the substrate processing apparatus 1 of the fourth to seventh embodiments, the processing liquid supply unit 50 of the second embodiment may be used. In addition, an example of etching the peripheral portion of the substrate W by the processing liquid discharge nozzles 21, 52, 80 of each embodiment is disclosed. However, it may also be used as a processing liquid discharge nozzle for etching or cleaning not only the peripheral portion of the substrate W but also the entire surface of the substrate W.

[0246] In addition, it should be considered that the disclosed embodiments of the present invention are illustrative in all respects and not restrictive. In fact, the above-described embodiments can be specifically implemented in various ways. In addition, the above-described embodiments can be omitted, replaced, and changed in various ways as long as they do not depart from the scope and gist of the appended claims.

Claims

1. A processing liquid release nozzle for releasing a processing liquid for substrate processing, characterized in that, Comprising: A nozzle main body portion having: a first main body portion formed with a first flow path communicating with a processing liquid supply path; And a second main body portion formed with a second flow path communicating with the first flow path and bent with respect to the first main body portion; An angle changing mechanism that changes the angle of the nozzle main body portion in the horizontal direction with respect to a fixing member that fixes the nozzle main body portion; And A nozzle discharge portion formed with a discharge flow path communicating with the second flow path and capable of discharging a processing liquid onto a substrate, The nozzle discharge portion is detachable from the front end of the second main body portion, the inner wall surface of the nozzle discharge portion has higher hydrophilicity than the inner wall surfaces of the first flow path and the second flow path, and the diameter of the discharge flow path is smaller than the diameter of the second flow path.

2. The processing liquid discharge nozzle according to claim 1, wherein: The angle changing mechanism is a connecting portion capable of changing the mounting position with respect to the fixing member.

3. The processing liquid discharge nozzle according to claim 1, wherein: The angle changing mechanism is a connecting portion that supports the first main body portion in a rotatable manner with respect to the first main body portion.

4. The processing liquid discharge nozzle according to claim 3, wherein: The nozzle main body portion and the connecting portion include a position aligning portion for aligning the angular position.

5. A nozzle arm, characterized in that, Comprising: The processing liquid discharge nozzle according to any one of claims 1 to 4; The fixing member; An arm portion capable of mounting the fixing member; and A rotating mechanism that rotates the fixing member or the arm portion in the horizontal direction.

6. The nozzle arm according to claim 5, wherein: The rotating mechanism is capable of rotating the fixing member with respect to the arm portion.

7. The nozzle arm according to claim 5, wherein: It includes a gas discharge nozzle that discharges gas, and the gas discharges the processing liquid that collides with the substrate and scatters above the substrate to a position outside the substrate.

8. The nozzle arm according to claim 7, wherein: The gas discharge nozzle is disposed inside the processing liquid discharge nozzle.

9. The nozzle arm according to claim 7, wherein: The gas discharge nozzle discharges the gas at a discharge angle larger than the discharge angle of the processing liquid with respect to the tangent of the substrate in the horizontal direction.

10. A substrate processing apparatus, characterized in that, Comprising: The nozzle arm according to any one of claims 5 to 9; And A substrate rotating portion that rotates the placed substrate, The processing liquid discharge nozzle discharges the processing liquid to the periphery of the substrate.

11. A substrate processing apparatus, characterized in that, Comprising: The nozzle arm according to any one of claims 5 to 9; A substrate rotating portion that rotates the placed substrate; And A control portion that controls the processing liquid discharge nozzle and the substrate rotating portion, The control portion sets the rotation angle in the rotation mechanism for each substrate process, and discharges the processing liquid onto the substrate at the set rotation angle.

12. The substrate processing apparatus according to claim 11, wherein: The control portion changes the rotation angle during the substrate processing.

13. A substrate processing apparatus, characterized in that, Comprising: The processing liquid discharge nozzle according to any one of claims 1 to 4; A first conduction part that can come into contact with the treatment liquid discharge nozzle and is in conduction with the treatment liquid discharge nozzle; A second conduction part that can be in conduction with the treatment liquid discharge nozzle by coming into contact with the first conduction part and removes the charge from the treatment liquid discharge nozzle; And A moving mechanism that can switch the positions of the treatment liquid discharge nozzle and the first conduction part to a contact position where the first conduction part is in contact with the second conduction part and a non-contact position where the first conduction part is not in contact with the second conduction part.

14. The substrate processing apparatus according to claim 13, wherein: At least one of the first conduction part and the second conduction part includes a deformable part that deforms when coming into contact with the other conduction part.

15. The substrate processing apparatus according to claim 13, wherein, Including: A holding part that holds the substrate when performing the substrate processing; And A cup part provided so as to surround the outside of the substrate held by the holding part, The second conduction part is provided on the cup part.

16. The substrate processing apparatus according to claim 13, wherein: Including a processing container that houses the treatment liquid discharge nozzle and the moving mechanism, The second conduction part is provided in the processing container, The moving mechanism switches the positions of the treatment liquid discharge nozzle and the first conduction part to the contact position and the non-contact position by raising and lowering the treatment liquid discharge nozzle and the first conduction part.

17. A substrate processing apparatus, characterized in that, Including: The treatment liquid discharge nozzle according to any one of claims 1 to 4; And An arm part that comes into contact with the treatment liquid discharge nozzle and is in conduction with the treatment liquid discharge nozzle.

18. A substrate processing apparatus, characterized in that, Including: The treatment liquid discharge nozzle according to any one of claims 1 to 4; And An ion generator that removes the charge from the treatment liquid discharge nozzle.

19. The substrate processing apparatus according to claim 18, wherein: Including a holding part that holds the substrate when performing the substrate processing, The ion generator removes the charge from the treatment liquid discharge nozzle when the holding part does not hold the substrate.

20. A substrate processing method that uses the nozzle arm according to any one of claims 5 to 9 to discharge a treatment liquid onto a substrate, wherein the substrate processing method includes: A step of setting a rotation angle in the rotation mechanism for each substrate processing; And a step of discharging the treatment liquid onto the substrate at the set rotation angle.

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