Electronic Devices

Abstract

The present invention provides an electronic device, comprising a substrate, a light emitting diode and an optical sensor. The light emitting diode is arranged on the substrate and can emit light. The optical sensor is arranged on the substrate and is used to receive the light, wherein the optical sensor can receive the light to generate a first electronic signal for fingerprint recognition, and can receive the light to generate a second electronic signal for brightness correction of the light.

Description

Technical Field

[0001] The present invention relates to an electronic device, and in particular to an electronic device comprising an optical sensor. Background Art

[0002] In electronic devices, optical sensors can be used to detect light and generate signals to perform functions of the electronic devices. However, as users have higher and higher requirements for electronic devices, improving the design of optical sensors has become an important issue in the electronics industry. Summary of the invention

[0003] In some embodiments, the present invention provides an electronic device. The electronic device includes a substrate, a light emitting diode, and an optical sensor. The light emitting diode is disposed on the substrate and can emit a light. The optical sensor is disposed on the substrate and is used to receive the light, wherein the optical sensor receives the light to generate a first electronic signal for fingerprint recognition, and receives the light to generate a second electronic signal for brightness correction of the light.

[0004] In some embodiments, the present invention provides an electronic device. The electronic device includes a substrate, a first light emitting diode, a second light emitting diode, and an optical sensor. The first light emitting diode is disposed on the substrate and can emit a first light. The second light emitting diode is disposed on the substrate and can emit a second light. The optical sensor is disposed on the substrate and is used to receive the first light and the second light, wherein the optical sensor receives the first light to generate a first electronic signal for fingerprint recognition, and receives the second light to generate a second electronic signal for brightness correction of the second light.

[0005] After reading the following detailed description of the embodiments illustrated with various figures, the purpose of the present invention should be clear to those skilled in the art. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 FIG. 1 is a cross-sectional diagram of an electronic device according to a first embodiment of the present invention.

[0007] Figure 2 It is a partially enlarged cross-sectional schematic diagram of an optical sensor according to a variation of the first embodiment of the present invention.

[0008] Figure 3 FIG. 4 is a cross-sectional diagram of an electronic device according to a second embodiment of the present invention.

[0009] Figure 4 FIG. 4 is a cross-sectional diagram of an electronic device according to a third embodiment of the present invention.

[0010] Figure 5It is a top view schematic diagram of a light emitting diode and an optical sensor according to a variation of the third embodiment of the present invention.

[0011] Figure 6 FIG. 4 is a functional block diagram of an exemplary operation method of an optical sensor according to the first embodiment of the present invention.

[0012] Figure 7 FIG. 4 is a functional block diagram of another exemplary operation method of the optical sensor according to the first embodiment of the present invention.

[0013] Figure 8 FIG. 4 is a flow chart of an operating method of an electronic device according to a third embodiment of the present invention.

[0014] Fig. 9 FIG. 4 is a schematic diagram of an electronic device according to an embodiment of the present invention.

[0015] Description of reference numerals: 100, 200, 400-electronic device; 102, 402-substrate; 104, 404-circuit layer; 106, 206, 406, OS-optical sensor; 108, 208-light-emitting diode; 108a, AE, A1, A2, 208a, 410a-first electrode; 108b, 208b, 410b, 408b, 412b-light-emitting layer; 108c, BE, B1, B2, 208c, 408c, 410c, 412c-second electrode; 110-switching element; 110C, 112C, S C2-semiconductor layer; 110D, 112D, DE2-drain; 110G, 112G, GE2-gate; 110S, 112S, SE2-source; 112-driving element; 114-pixel definition layer; 114a, 208d, 410d-opening; 120-protective layer; 120a-first protective layer; 120b-second protective layer; 120c-third protective layer; 130-processor; 132-fingerprint recognition unit; 134-brightness correction unit; 136-ambient light recognition unit; 138-electrical signal distributor; 408-first light emitting diode diode; 410-second light-emitting diode; 412-third light-emitting diode; 900-display device; BF-buffer layer; BP1, BP2-insulating layer; C1-first semiconductor layer; C2-second semiconductor layer; C3-third semiconductor layer; CG-cover glass layer; D1-thickness direction; DT-sensing switch element; ES-electronic signal; ES1-first electronic signal; ES2-second electronic signal; ES3-third electronic signal; FG-object; FL-functional layer; GI-first gate insulating layer; GI2-second gate insulating layer; I1, I2-intrinsic semiconductor Body layer; ILD-interlayer dielectric layer; IR-display area; L1, L2-light; L1'-first light; L2'-second light; LS-shielding layer; N1, N2-N-type semiconductor layer; P1, P2-P-type semiconductor layer; PLN-flat layer; PLNS-flat surface; PR-peripheral area; R1-first area; R2-second area; Rf-fingerprint detection area; Rnf-non-fingerprint detection area; S100, S102, S104, S106, S108, S110-steps; SCM-brightness detection mode; SFM-fingerprint detection mode. DETAILED DESCRIPTION

[0016] The present invention can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to facilitate the understanding of the readers and for the simplicity of the drawings, the multiple drawings in the present invention only depict a portion of the electronic device, and the specific components in the drawings are not drawn according to the actual scale. In addition, the number and size of each component in the drawings are only for illustration and are not intended to limit the scope of the present invention.

[0017] Certain words are used throughout the specification and the appended claims to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components with different names. This document does not intend to distinguish between components with the same function but different names.

[0018] In the following description and claims, the words “including” and “comprising” are open-ended words and thus should be interpreted as meaning “including but not limited to…”.

[0019] It should be understood that when an element or film layer is referred to as being "on" or "connected to" another element or film layer, it may be directly on or directly connected to the other element or layer, or there may be an intervening element or film layer between the two (indirect case). Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two.

[0020] Although the terms first, second, third, etc. can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but may be replaced by first, second, third, etc. according to the order in which the components are declared in the claims. Therefore, in the following description, the first component may be the second component in the claims.

[0021] It should be noted that the embodiments listed below can replace, reorganize, and mix the technical features in several different embodiments to complete other embodiments without departing from the spirit of the present invention.

[0022] Please refer to Figure 1 , Figure 1 Schematic cross-sectional view of an electronic device according to the first embodiment of the present invention. The electronic device 100 may include a display device, an antenna device, a sensing device or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The electronic device 100 may be used, for example, as a public display, a spliced ​​display, a car display, a display panel, a touch panel, a light source module, a television, a smart phone, a tablet computer, a notebook computer, a lighting device or an electronic device used in the above products, but is not limited to the above examples. Figure 1As shown, the electronic device 100 may include a substrate 102, a circuit layer 104, an optical sensor 106, and a light emitting diode 108. The substrate 102 may be a hard substrate (such as a glass substrate, a quartz substrate, a ceramic substrate, or a sapphire substrate, but not limited thereto), a soft and flexible substrate (such as a plastic substrate such as a polyimide (PI) substrate, a polycarbonate (PC) substrate, or a polyethylene terephthalate (PET) substrate), other appropriate substrates, or a combination thereof, but not limited thereto.

[0023] The light emitting diode 108 is disposed on the substrate 102, and may include, for example, a first electrode 108a, a second electrode 108c, and a light emitting layer 108b, wherein the light emitting layer 108b is located between the first electrode 108a and the second electrode 108c, and the first electrode 108a and the second electrode 108c may serve as the cathode and the anode of the light emitting diode 108, respectively, but not limited thereto. In a variant embodiment, the first electrode 108a and the second electrode 108c may also serve as the anode and the cathode of the light emitting diode 108, respectively. In this embodiment, the second electrode 108c is closer to the substrate 102 than the first electrode 108a, and the second electrode 108c is located at the lower side of the light emitting layer 108b, and may be referred to as the lower electrode, while the first electrode 108a is located at the upper side of the light emitting layer 108b, and may be referred to as the upper electrode. The first electrode 108a and the second electrode 108c may include metal oxides or metal materials, such as, but not limited thereto, indium tin oxide. The light emitting diode 108 may include, for example, an organic light emitting diode (OLED), a quantum dot diode (QLED or QDLED), an inorganic light emitting diode (LED), any other suitable light emitting element, or a combination thereof. The inorganic light emitting diode may be a sub-millimeter light emitting diode (mini LED) or a micro light emitting diode (micro LED), but is not limited thereto. In one embodiment, the electronic device 100 may further include liquid crystal (LC), quantum dot (QD), fluorescence material, phosphor material, other suitable materials, or a combination thereof, but is not limited thereto. For example, Figure 1The light emitting diode 108 of the present invention may be an organic light emitting diode, but the present invention is not limited thereto. In addition, the light emitting diode 108 of the present invention may include, for example, a blue light emitting diode, a red light emitting diode, a green light emitting diode, or a white light emitting diode, but the present invention is not limited thereto. For example, the light emitting diode 108 may be a blue light emitting diode. Figure 1 Only one LED 108 is shown, but the present invention is not limited thereto. For example, the electronic device 100 may include two or more LEDs.

[0024] The substrate 102 may include a pixel defining layer (PDL) 114, which may include at least one opening 114a. The light emitting diode 108 may be mainly located in the opening 114a, or the light emitting layer 108b of the light emitting diode 108 may be located in the opening 114a. In one embodiment, the opening 114a of the pixel defining layer 114 may define a light emitting region or a light emitting area of ​​the light emitting diode 108. According to the present invention, the light emitting diode 108 may emit a light ray L1 and a light ray L2. The light ray L1 may be emitted in a direction opposite to the substrate 102. On the other hand, the light ray L2 may be considered to be emitted in a direction toward the substrate 102.

[0025] The circuit layer 104 is disposed on the substrate 102 and may include various wires, circuits and / or electronic components, such as a switch element 110 and a drive element 112. The switch element 110 and the drive element 112 may include, for example, a thin film transistor (TFT), but the present invention is not limited thereto. The switch element 110 may have a gate 110G, a source 110S, a drain 110D, a semiconductor layer 110C, and a first gate insulating layer GI, wherein the first gate insulating layer GI is located between the gate 110G and the semiconductor layer 110C. The gate 110G of the switch element 110 may be electrically connected to a scan line ( Figure 1 The source 110S may be electrically connected to the data line DL. The driving element 112 may have a gate 112G, a source 112S, a drain 112D, a semiconductor layer 112C, and a first gate insulating layer GI, wherein the first gate insulating layer GI is located between the gate 112G and the semiconductor layer 112C. In one embodiment, the gate 112G of the driving element 112 may be electrically connected to the drain 110D of the switching element 110, the drain 112D of the driving element 112 may be electrically connected to the second electrode 108c of the light-emitting diode 108, and the source 112S of the driving element 112 may be electrically connected to the working voltage source (VDD) or the shared voltage source, but is not limited thereto. In addition, although Figure 1The switch element 110 and the driving element 112 are shown as top gate thin film transistors, but the present invention is not limited thereto. The switch element 110 and the driving element 112 may also include bottom gate thin film transistors or multi-gate thin film transistors (e.g. dual gate / double gate transistors), and the switch element 110 and the driving element 112 of the present invention may be thin film transistors of the same or different states. In one embodiment, the materials of the semiconductor layer 110C of the switch element 110 and the semiconductor layer 112C of the driving element 112 may include an amorphous semiconductor, a polycrystalline semiconductor, a metal oxide (e.g. indium gallium zinc oxide (IGZO)), or a combination thereof, but are not limited thereto. The materials of the semiconductor layer 110C and the semiconductor layer 112C may be the same or different. For example, the material of one of the semiconductor layer 110C and the semiconductor layer 112C may include polysilicon, and the material of the other may include indium gallium zinc oxide (IGZO).

[0026] In this embodiment, the optical sensor 106 may be located between the light emitting diode 108 and the substrate 102, but the present invention is not limited thereto. Figure 1 The optical sensor 106 is shown as being located between the substrate 102 and the light emitting diode 108, but the optical sensor 106 may be disposed at other locations. For example, the optical sensor 106 may be disposed below the substrate 102 (i.e., the substrate 102 is located between the optical sensor 106 and the light emitting diode 108) or above the light emitting diode 108 (i.e., the light emitting diode 108 is located between the optical sensor 106 and the substrate 102). The optical sensor 106 may be an optical sensor of various types. This embodiment uses a PIN diode as an example, but is not limited thereto. Figure 1 As shown, the optical sensor 106 may include a first electrode AE, a first semiconductor layer C1, a second semiconductor layer C2, a third semiconductor layer C3, and a second electrode BE. The first electrode AE ​​and the second electrode BE may include, for example, a metal material, a metal oxide, or other appropriate conductive materials, but are not limited thereto. The first semiconductor layer C1 may include one of an N-type semiconductor layer or a P-type semiconductor layer, the third semiconductor layer C3 may include the other of the N-type semiconductor layer or the P-type semiconductor layer, and the second semiconductor layer C2 may include an intrinsic semiconductor layer. For example, the first semiconductor layer C1 may be an N-type semiconductor layer, the second semiconductor layer C2 may be an intrinsic semiconductor layer, and the third semiconductor layer C3 may be a P-type semiconductor layer, but the present invention is not limited thereto.

[0027] The sensing switch element DT may be electrically connected to the optical sensor 106. The sensing switch element DT may be disposed adjacent to the optical sensor 106, for example, disposed below the optical sensor 106, and may be used, for example, to control the transmission of the sensing signal. In the present embodiment, the sensing switch element DT may be, for example, a thin film transistor, and may have a gate GE2, a source SE2, a drain DE2, a semiconductor layer SC2, and a second gate insulating layer GI2, wherein the second gate insulating layer GI2 is located between the gate GE2 and the semiconductor layer SC2, but the present invention is not limited thereto. In the present embodiment, the source SE2 of the sensing switch element DT may be, for example, electrically connected to the second electrode BE of the optical sensor 106, but the present invention is not limited thereto.

[0028] According to this embodiment, the optical sensor 106 may partially overlap with the LED 108 in the thickness direction D1 of the substrate 102. Here, “partially overlap” may mean that the entire or a portion of the LED 108 overlaps with the optical sensor 106 in the thickness direction D1. Figure 1 For example, the optical sensor 106 includes a first region R1 and a second region R2, the first region R1 does not overlap with the light-emitting diode 108, and the second region R2 overlaps with the light-emitting diode 108. It should be noted that "overlapping with the light-emitting diode" here may refer to an area where the optical sensor 106 and the second electrode 108c of the light-emitting diode 108 have at least a partial overlap, but the present invention is not limited to this. In this embodiment, the area of ​​the first region R1 of the optical sensor 106 may be larger than the area of ​​the second region R2 of the optical sensor. In some embodiments, the ratio of the area of ​​the second region R2 to the area of ​​the light-emitting diode 108 may range from 0.1 to 1 (0.1≦ratio 1). It should be noted that the "area of ​​the light-emitting diode" here may be the area of ​​the light-emitting layer 108b in the top view direction, and the present invention is not limited to this. For example, the area of ​​the light-emitting diode 108 may also be defined by the area of ​​the lower surface of the opening 114a of the pixel definition layer 114.

[0029] The first region R1 of the optical sensor 106 may, for example, receive the light L1 emitted by the light emitting diode 108. For example, when the object FG (such as a finger) contacts the electronic device 100, the light L1 may be reflected by the object FG, so that the first region R1 receives the light L1 and may thereby generate a first electronic signal. The first electronic signal may, for example, be used for fingerprint recognition, but is not limited thereto. The optical sensor 106 may, for example, also be used to detect ambient light to generate a first electronic signal to obtain information about the ambient light source. The second region R2 of the optical sensor 106 may, for example, receive the light L2 emitted by the light emitting diode 108 and may generate a second electronic signal. The second electronic signal may, for example, be used to calibrate the brightness of the light emitting diode 108, but is not limited thereto. In one embodiment, the first electronic signal and the second electronic signal may each be used for fingerprint recognition, obtaining information about the ambient light source, calibrating the brightness of the light emitting diode 108, and / or other appropriate functions, but are not limited thereto.

[0030] In one embodiment, the light shielding layer LS may be disposed on the substrate 102 and may be located between the circuit layer 104 and the substrate in the thickness direction D1, such as between the switch element 110 and the substrate 102 and / or between the driving element 112 and the substrate 102, but the invention is not limited thereto. The light shielding layer LS may be used, for example, to block light entering from the substrate 102 to reduce the influence of ambient light on the switch element 110 and the driving element 112, but the invention is not limited thereto.

[0031] In one embodiment, the flat layer PLN may be disposed on the optical sensor 106 and may provide a flat surface PLNS for disposing the second electrode 108c and the light-emitting layer 108b formed subsequently, but the present invention is not limited thereto. The functional layer FL and the protective layer CG may be selectively included in the electronic device 100 of the present invention. The functional layer FL may be used to provide the optical function or touch function required by the electronic device 100. The protective layer CG may be used, for example, to protect the functional layer FL and other film layers and / or components under the functional layer FL, but the present invention is not limited thereto. The electronic device 100 may further include an insulating layer 120 disposed on the pixel definition layer 114 and the light-emitting diode 108. In some embodiments, the insulating layer 120 may be a single-layer structure or a multi-layer structure. For example, the insulating layer 120 may include a first insulating layer 120a, a second insulating layer 120b, and a third insulating layer 120c. For example, the first insulating layer 120a and the third insulating layer 120c may include an inorganic insulating material, and the second insulating layer 120b may include an organic insulating material, but the present invention is not limited thereto. In one embodiment, the insulating layer 120 can also provide a planarization effect. In addition to the above-mentioned elements or film layers, the electronic device 100 of this embodiment may also include, for example, a buffer layer BF arranged on the light-shielding layer LS, an interlayer dielectric layer ILD arranged on the first gate insulating layer GI, an insulating layer BP1 arranged on the interlayer dielectric layer ILD, and an insulating layer BP2 arranged on the second gate insulating layer GI2, but is not limited to this.

[0032] Please refer to Figure 2 , Figure 21 is a cross-sectional schematic diagram of an optical sensor according to a variation of the first embodiment of the present invention. In this variation, the materials included in the first region R1 and the second region R2 of the optical sensor 106 may have different combinations as needed. The optical sensor 106 may include a first electrode A1, a first-type semiconductor layer N1, an intrinsic semiconductor layer I1, a second-type semiconductor layer P1, and a second electrode B1 located in the first region R1, and a first electrode A2, a first-type semiconductor layer N2, an intrinsic semiconductor layer I2, a second-type semiconductor layer P2, and a second electrode B2 located in the second region R2. In one embodiment, the first-type semiconductor layer N1 and the first-type semiconductor layer N2 may be one of an N-type semiconductor layer and a P-type semiconductor layer, and the second-type semiconductor layer P1 and the second-type semiconductor layer P2 may be the other of an N-type semiconductor layer and a P-type semiconductor layer. According to a variant embodiment, the first electrodes A1 and A2 may have the same material, for example, including a conductive material, and the second electrodes B1 and B2 may have the same material, for example, including a conductive material, that is, the semiconductor layers (including the first-type semiconductor layer, the intrinsic semiconductor layer, and the second-type semiconductor layer) of the first region R1 and the second region R2 may share the first electrode and the second electrode. In addition, in one embodiment, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 of the first region R1 may be the same as the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 of the second region R2, respectively, but the doping amounts of the semiconductor layers of the two regions may be different. For example, the semiconductor layers (including the first-type semiconductor layer, the intrinsic semiconductor layer, and the second-type semiconductor layer) of the first region R1 and the second region R2 may include silicon, and the first-type semiconductor layer N2, the second-type semiconductor layer P2, and / or the intrinsic semiconductor layer I2 of the second region R2 may have a larger doping amount than the first-type semiconductor layer N1, the second-type semiconductor layer P1, and / or the intrinsic semiconductor layer I1 of the first region R1, but the present invention is not limited thereto. According to another variant embodiment, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 of the first region R1 may be different from the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 of the second region R2, respectively. For example, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 of the first region R1 may include silicon, and the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 of the second region R2 may include germanium, but the present invention is not limited thereto. In another embodiment, the material of the second-type semiconductor layer P1 of the first region R1 may be the same as the second-type semiconductor layer P2 of the second region R2, for example, including silicon. In addition, the materials of the first-type semiconductor layer N1 and the intrinsic semiconductor layer I1 of the first region R1 may be different from the materials of the first-type semiconductor layer N2 and the intrinsic semiconductor layer I2 of the second region R2, respectively.For example, the second-type semiconductor layer P1 of the first region R1 and the second-type semiconductor layer P2 of the second region R2 may include silicon, the first-type semiconductor layer N1 and the intrinsic semiconductor layer I1 of the first region R1 may include silicon, and the first-type semiconductor layer N2 and the intrinsic semiconductor layer I2 of the second region R2 may include germanium, but are not limited to the above materials. According to yet another embodiment, in the optical sensor 106, the material of the first electrode A1 of the first region R1 may be different from the first electrode A2 of the second region R2, and the material of the second electrode B1 of the first region R1 may be different from the second electrode B2 of the second region R2. In addition, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 of the first region R1 may be different from the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 of the second region R2, respectively. For example, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 of the first region R1 may include silicon, and the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 of the second region R2 may include germanium, but not limited thereto. The materials of the first electrode, the second electrode, the first-type semiconductor layer, the intrinsic semiconductor layer, and the second-type semiconductor layer in the first region R1 and the second region R2 may be the same or different, and the design may be changed according to actual needs.

[0033] Please refer to Figure 3 , Figure 3 FIG. 1 is a cross-sectional view of an electronic device according to a second embodiment of the present invention. Figure 3 The optional functional layer and protective layer are omitted. Figure 1 The main difference of the electronic device of the first embodiment shown is that the second electrode 208c of the light emitting diode 208 of the electronic device 200 of this embodiment may have an opening 208d. Figure 3 As shown, the light emitting diode 208 may include a first electrode 208a, a light emitting layer 208b, and a second electrode 208c, wherein the second electrode 208c may have an opening 208d, and the light emitting layer 208b may be filled in the opening 208d. The first electrode 208a and the second electrode 208c of the light emitting diode 208 may include, for example, metal oxide or metal material. For example, the first electrode 208a may include a metal oxide material (such as indium tin oxide (ITO)), and the second electrode 208c may include a metal conductive material, but is not limited thereto. Similarly, although Figure 3Only one light emitting diode 208 is shown, but the present invention is not limited thereto. The electronic device 200 may include two or more light emitting diodes, for example. Similar to the first embodiment, the optical sensor 206 of the present embodiment has a first region R1 that does not overlap with the light emitting diode 208 and a second region R2 that overlaps with the light emitting diode 208. The first region R1 of the optical sensor 206 may, for example, receive the light L1, and may, for example, thereby generate a first electronic signal for fingerprint recognition. The light L1 may be emitted by the light emitting diode 208 and reflected by the object FG to the optical sensor 206. The second region R2 of the optical sensor 206 may, for example, receive the light L2 emitted by the light emitting diode 208, and may, for example, generate a second electronic signal for correcting the brightness of the light emitting diode 208, but the present invention is not limited thereto. According to the present embodiment, the light L2 may, for example, be emitted by the light emitting layer 208b and reach the second region R2 of the optical sensor 206 through the opening 208d, but the present invention is not limited thereto. Other elements or layers of the electronic device 200 of this embodiment are the same as or similar to those of the first embodiment, and thus are not described in detail herein.

[0034] Please refer to Figure 4 , Figure 4 It is a schematic cross-sectional view of an electronic device according to the third embodiment of the present invention. The electronic device 400 may include a substrate 402, a circuit layer 404, an optical sensor 406, a first light-emitting diode 408, and a second light-emitting diode 410. The main difference between the electronic device of this embodiment and the electronic device of the second embodiment is that the electronic device 400 of this embodiment has a first light-emitting diode 408 and a second light-emitting diode 410, and the optical sensor 406 may partially overlap with the second light-emitting diode 410. The second light-emitting diode 410 may include a first electrode 410a, a light-emitting layer 410b, and a second electrode 410c. The material of the substrate 402, the structure of the circuit layer 404, the material and the setting position of the optical sensor 406, and the material of the first light-emitting diode 408 and the second light-emitting diode 410 may refer to the first embodiment, so they will not be described here. It should be noted that although Figure 4 Only two light emitting diodes are shown, but the present invention is not limited thereto, and the electronic device 400 may include more light emitting diode elements. Figure 4As shown, the first light emitting diode 408 may not overlap with the optical sensor 406, and the second light emitting diode 410 may partially overlap with the optical sensor 406, but the present invention is not limited thereto. Similarly, "partial overlap" herein may mean that the entire or partial area of ​​the second light emitting diode 410 overlaps with the optical sensor 406 in the thickness direction D1. The optical sensor 406 may have a first region R1 and a second region R2, wherein the first region R1 does not overlap with the second light emitting diode 410, and the second region R2 overlaps with the second light emitting diode 410. It should be noted that in this embodiment, the second region R2 may include a region where the optical sensor 206 at least partially overlaps with the second electrode 208c of the light emitting diode 208, and a region where the optical sensor 206 at least partially overlaps with the opening 208d, but the present invention is not limited thereto. According to this embodiment, the first light emitting diode 408 may emit a first light L1', and the first region R1 of the optical sensor 406 may, for example, receive the first light L1' emitted by the first light emitting diode 408, but the present invention is not limited thereto. For example, when the object FG contacts the electronic device 400, the first light L1' may be reflected by the object FG, so that the first region R1 receives the first light L1' and may generate a first electronic signal. The first electronic signal may be used, for example, for fingerprint recognition, but is not limited thereto. The optical sensor 406 may also detect the ambient light source and generate a first electronic signal for obtaining information (such as illumination) of the ambient light source. The second light emitting diode 410 may emit a second light L2', and the second region R2 of the optical sensor 406 may, for example, receive the second light L2' emitted by the second light emitting diode 410, but is not limited thereto. For example, the second region R2 of the optical sensor 406 may receive the second light L2' emitted by the second light emitting diode 410, and may generate a second electronic signal for correcting the brightness of the second light emitting diode 410, but is not limited thereto. According to the present embodiment, the wavelength of the first light L1' may be greater than the wavelength of the second light L2'. The wavelength range of the first light L1' may be, for example, 495 nanometers (nm) to 570 nanometers (495nm L1'570nm), and the wavelength range of the second light L2' may be, for example, 450 nanometers to 495 nanometers (450nm L2'495nm). For example, the first light L1' may include green light, and the second light L2' may include blue light, but it is not limited to this. It should be noted that "the wavelength of the first light L1' is greater than the wavelength of the second light L2'" herein may mean that the peak-to-peak value of the spectrum graph of the first light L1' is greater than the peak-to-peak value of the spectrum graph of the second light L2'. The spectrum graphs of the first light L1' and the second light L2' can be measured externally (or on a display surface) as the first light L1' emitted by the first light emitting diode 408 and the second light L2' emitted by the second light emitting diode 410, but it is not limited to this. Although Figure 4The light L2' is shown as being emitted toward the substrate 402, but the emission direction or measurement direction of the light L2' is not limited here. According to this embodiment, when the electronic device 400 is in operation, the first light L1' and the second light L2' can be emitted simultaneously or at different times. That is, when the first light emitting diode 408 emits the first light L1', the second light emitting diode 410 can emit the second light L2' simultaneously, or the time when the first light emitting diode 408 emits the first light L1' and the time when the second light emitting diode 410 emits the second light L2' can be staggered. In addition, in this embodiment, if Figure 4 As shown, the second electrode 410c of the second light emitting diode 410 has an opening 410d, so the second light L2' can be emitted by the second light emitting diode 410 and reach the second region R2 of the optical sensor 406 through the opening 410d, but the present invention is not limited thereto. In other variant embodiments, the second electrode 410c of the second light emitting diode 410 may not have the opening 410d, and the second light L2' can directly pass through the second electrode 410c to reach the second region R2 of the optical sensor 406. For example, when the second electrode 410c is an opaque material (such as a metal material), the opening 410d can be provided in the second electrode 410c to allow the second light L2' to pass through. When the second electrode 410c is a translucent material (such as a transparent conductive material), the opening 410d may not be provided in the second electrode 410c. In one embodiment, the first electronic signal and the second electronic signal can be used for fingerprint recognition, obtaining information of ambient light, calibrating the brightness of the light emitting diode 108, and / or other appropriate functions, but the present invention is not limited thereto. For example, the optical sensor 406 may also utilize the first light L1 ′ to generate an electronic signal to generate a first electronic signal for calibrating the brightness of the first LED 408 and / or the second LED 410 .

[0035] Please refer to Figure 5 , Figure 5 FIG. 4 is a top view of a light emitting diode and an optical sensor according to a variation of the third embodiment of the present invention. The electronic device 400 may include a first light emitting diode 408, a second light emitting diode 410, a third light emitting diode 412, and an optical sensor 406. To simplify the diagram, Figure 5Only the light emitting layer 408b and the second electrode 408c of the first light emitting diode 408, the light emitting layer 410b and the second electrode 410c of the second light emitting diode 410, and the light emitting layer 412b and the second electrode 412c of the third light emitting diode 412 are shown. In one embodiment, the adjacent first light emitting diode 408, the second light emitting diode 410, and the third light emitting diode 412 may constitute a pixel, and the second light emitting diode 410 partially overlaps with the optical sensor 406 in the thickness direction D1. In another embodiment, the optical sensor 460 may also partially overlap with the first light emitting diode 408 in the thickness direction D1, and the first light emitting diode 408 is disposed between the second light emitting diode 410 and the third light emitting diode 412. The first light emitting diode 408 may emit light having a first color, the second light emitting diode 410 may emit light having a second color, and the third light emitting diode 412 may emit light having a third color, wherein the first color, the second color, and the third color may be different from each other, or at least two of them may be the same, but the present invention is not limited thereto. For example, the first color, the second color, and the third color are respectively one of red, green, and blue, but the present invention is not limited thereto. For example, since the decay of a blue light emitting diode may be more obvious than that of a red light emitting diode and a green light emitting diode, in order to enable the optical sensor 406 to detect the light emitted by the blue light emitting diode and perform brightness correction, the second light emitting diode 410 overlapping with the optical sensor 406 may be designed to be a blue light emitting diode, but the present invention is not limited thereto. In addition, according to the present embodiment, the second electrode 410c of the second light emitting diode 410 may have an opening 410d so that light can reach the optical sensor, for example, through the opening 410d, but the present invention is not limited thereto. In other variant embodiments, the second electrode 410c may not include the opening 410d. In other embodiments, a pixel may include four or more light emitting diodes, for example, including a red light emitting diode, a blue light emitting diode, a green light emitting diode, and a white light emitting diode, but the present invention is not limited thereto.

[0036] Please refer to Figure 6 to Figure 7 , and refer to Figure 1 . Figure 6 FIG. 1 is a functional block diagram of an exemplary operation method of an optical sensor according to the first embodiment of the present invention. Figure 7 FIG. 1 is a functional block diagram of another exemplary operation method of the optical sensor of the first embodiment of the present invention. Figure 6As shown, the electronic device 100 may further include a processor 130, and the processor 130 may include a fingerprint recognition unit 132 and a brightness correction unit 134. The optical sensor 106 may receive the optical signal in a time-sequential manner, and then convert the optical signal into a first electronic signal ES1 and a second electronic signal ES2. For example, the optical sensor 106 may convert the light L1 received by the first region R1 into a first electronic signal ES1 within a time interval, and transmit it to the fingerprint recognition unit 132. After being processed or recognized by the fingerprint recognition unit 132, the fingerprint information may be obtained. On the other hand, the optical sensor 106 may convert the light L2 received by the second region R2 into a second electronic signal ES2 within another time interval and transmit it to the brightness correction unit 134. The brightness correction unit 134 determines the light effect of the light-emitting diode 108. If correction is required, the brightness correction unit 134 may send a correction signal. That is, as described above, the optical sensor 106 may process the light received by the first region R1 and the second region R2 at different times. As mentioned above, the first electronic signal ES1 can be used, for example, for fingerprint recognition, and the second electronic signal ES2 can be used, for example, for brightness correction of the light-emitting diode, but the present invention is not limited thereto. In addition, the optical sensor 106 can selectively include an ambient light recognition unit 136. When the optical sensor 106 receives ambient light, the received ambient light can be converted into a third electronic signal ES3 and transmitted to the ambient light recognition unit 136. After being processed or recognized by the ambient light recognition unit 136, the ambient light information can be obtained, but the present invention is not limited thereto. According to the present embodiment, the ambient light can be received, for example, by the first region R1 of the optical sensor 106, but the present invention is not limited thereto. Please refer to Figure 7 In another exemplary operating method, the processor 130 of the electronic device 100 may further include an electrical signal distributor 138. According to this embodiment, the optical sensor 106 may only receive one light ray. In one embodiment, the light ray may include a light ray L1 and a light ray L2 emitted simultaneously. The light ray may be converted into an electrical signal ES, and may be divided into a first electronic signal ES1 and a second electronic signal ES2 by the electrical signal distributor 138 in the processor 130, and the first electronic signal ES1 and the second electronic signal ES2 may be sent to the fingerprint recognition unit 132 and the brightness correction unit 134 respectively at the same time. The uses of the first electronic signal ES1 and the second electronic signal ES2 may refer to the above content, so they will not be repeated here. In a variant embodiment, Figure 7 The processor 130 shown may also include an ambient light recognition unit. The electrical signal distributor 138 may convert the electrical signal ES into a second electronic signal ES2 and a third electronic signal (not shown), and transmit them to the brightness correction unit 134 and the ambient light recognition unit respectively.

[0037] Please refer to Figure 8 , and refer to Figure 4 , Figure 8FIG. 4 is a flow chart of an operation method of an electronic device according to a third embodiment of the present invention. The electronic device 400 may be, for example, a display device, but is not limited thereto. Figure 8 As shown, the display device may, for example, selectively enter the fingerprint detection mode SFM or the brightness detection mode SCM. For example, when the user wants to enter the fingerprint detection mode SFM, step S100 may be performed to start the fingerprint detection mode SFM, and then the display device may execute step S102 to turn off the second light emitting diode 410. The second light emitting diode 410 may partially overlap with the optical sensor 406. For example, the sub-pixel corresponding to the second light emitting diode 410 may be turned off. For example, when the display device enters the fingerprint detection mode SFM, the blue sub-pixel may be turned off, but not limited to this. Since the detection of the fingerprint may be performed by the first region R1 of the optical sensor 406 receiving the first light L1' of the first light emitting diode 408 and generating the first electronic signal, in order to reduce the influence of the second light L2' emitted by the second light emitting diode 410 on the detection result, the sub-pixel corresponding to the second light emitting diode 410 may be turned off. After executing step S102, step S104 may be executed to receive the first light and generate the first electronic signal. The optical sensor 406 may, for example, receive the first light L1' emitted from the first light emitting diode 408 and reflected by the object FG, and convert the first light L1' into a first electronic signal to identify the fingerprint information, but the present invention is not limited thereto. When the user wants to enter the brightness detection mode SCM, the brightness detection mode SCM may be activated by executing step S106. Then, the display device may execute step S108 to turn off the first light emitting diode. For example, the first light emitting diode 408 that does not overlap with the optical sensor 406 may be turned off, or in other words, the sub-pixel corresponding to the first light emitting diode 408 may be turned off. For example, when the display device enters the brightness detection mode, the red sub-pixel or the green sub-pixel may be turned off, but the present invention is not limited thereto. Since the brightness detection may be performed by the second region R2 of the optical sensor 406 receiving the second light L2' of the second light emitting diode 410 and generating the second electronic signal, in order to reduce the influence of the first light L1' emitted by the first light emitting diode 408 on the detection result, the sub-pixel corresponding to the first light emitting diode 408 may be turned off. After executing step S108, step S110 may be executed to receive the second light and generate a second electronic signal. The optical sensor 406 may, for example, receive the second light L2' emitted from the second light emitting diode 410 and convert the second light L2' into a second electronic signal to confirm the brightness information, thereby adjusting the brightness of the second light emitting diode 410, but is not limited thereto.

[0038] Please refer to Fig. 9 , Fig. 9 FIG. 1 is a schematic top view of an electronic device according to an embodiment of the present invention. Fig. 9As shown, the electronic device of the present invention can be applied as a display device 900, which may include a display area IR and a peripheral area PR, and the display device 900 may also include a plurality of optical sensors ( Fig. 9 The optical sensor here can refer to Figures 1 to 5 Any optical sensor, and the display device 900 may include Figures 1 to 5 Any electronic device, such as Figure 4The electronic device 400 shown includes a first light emitting diode 408 and a second light emitting diode 410. In the general display mode, as shown in part (I), the entire display area IR can display an integrated image screen, but is not limited thereto. In the fingerprint detection mode, as shown in part (II), the display area IR of the display device 900 can be divided into a fingerprint detection area Rf and a non-fingerprint detection area Rnf. For example, the fingerprint detection area Rf and the non-fingerprint detection area Rnf can display different colors or patterns, respectively. In some embodiments, in the fingerprint detection mode, each pixel in the non-fingerprint detection area Rnf can be turned off, that is, at least part of the light emitting diodes in the non-fingerprint detection area Rnf are turned off, and only the pixels in the fingerprint detection area Rf or the light emitting diodes in these pixels are turned on. In other embodiments, when the display device 900 is in the fingerprint detection mode, only at least one of the first LED, the second LED, and the third LED in the fingerprint detection area Rf (for example, the first LED) may be turned on, and at least one of the other LEDs (for example, the second LED and the third LED) in the fingerprint detection area Rf may be turned off, or the LED overlapping with the optical sensor 406 may be turned off, but not limited thereto. The optical sensor in the fingerprint detection area Rf may, for example, be used to receive light reflected by a finger and generate an electronic signal, which may, for example, be used as a fingerprint recognition signal, but not limited thereto. The optical sensor in the non-fingerprint detection area Rnf may, for example, be used to receive ambient light and generate an electronic signal, which may, for example, be used as a background value signal, but not limited thereto. It should be noted that when the display device 900 is in the fingerprint detection mode, the optical sensor of the fingerprint detection area Rf may receive ambient light in addition to the light reflected by the finger, so the electronic signal generated by the optical sensor of the fingerprint detection area Rf for fingerprint recognition may include noise caused by ambient light. In order to reduce the influence of ambient light on the fingerprint recognition signal, the electronic signal generated by the optical sensor of the fingerprint detection area Rf may be deducted from the background value signal generated by the optical sensor in the non-fingerprint detection area Rnf to obtain a corrected fingerprint recognition signal, that is, the corrected fingerprint recognition signal may be equal to the fingerprint recognition signal minus the background value signal (ambient light), but is not limited to this. In this way, the influence of ambient light in the fingerprint recognition process can be reduced. On the other hand, in some embodiments, when the display device 900 is to perform the LED calibration mode, the first LED in the display area IR can be turned off, only the second LED can be turned on, and the optical sensor can be used to receive the light emitted by the second LED to collect the light information of the second LED, and then perform optical calibration, but the present invention is not limited to this.

[0039] In summary, the present invention provides an electronic device, which includes a substrate, an optical sensor and a light emitting diode. The optical sensor has a first area that does not overlap with the light emitting diode and a second area that overlaps with the light emitting diode. The first area of ​​the optical sensor can receive light emitted by the light emitting diode and reflected by the finger and generate a first electronic signal, and the second area of ​​the optical sensor can receive light emitted by the light emitting diode and generate a second electronic signal. By means of the first electronic signal and the second electronic signal, the electronic device can have the functions of brightness correction and fingerprint recognition. In some embodiments, the optical sensor can also receive ambient light to collect ambient light information. In addition, since the optical sensor of the electronic device of the present invention can have multiple functions, the volume of the electronic device can be reduced.

[0040] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that: include: a substrate; a light emitting diode, disposed on the substrate and emitting light; a switch element, disposed on the substrate and electrically connected to the light emitting diode; as well as an optical sensor disposed on the substrate and used to receive the light, wherein the optical sensor is disposed between the switch element and the light emitting diode; The optical sensor receives the light to generate a first electronic signal for fingerprint recognition, and receives the light to generate a second electronic signal for brightness correction of the light; The optical sensor includes a first area and a second area, the first area does not overlap with the light emitting diode, the second area overlaps with the light emitting diode, the first area receives the light to generate the first electronic signal, and the second area receives the light to generate the second electronic signal.

2. The electronic device according to claim 1, wherein: The area of ​​the first region is greater than the area of ​​the second region.

3. The electronic device according to claim 2, wherein: The ratio of the area of ​​the second region to the area of ​​the light emitting diode is in the range of 0.1 to 1.

4. An electronic device, characterized in that: include: a substrate; a first light emitting diode, disposed on the substrate and emitting a first light; a second light emitting diode, disposed on the substrate and emitting a second light; a switch element, disposed on the substrate and electrically connected to the second light emitting diode; as well as an optical sensor disposed on the substrate and used to receive the first light and the second light, wherein the optical sensor is disposed between the switch element and the second light emitting diode; wherein the optical sensor receives the first light to generate a first electronic signal for fingerprint recognition, and receives the second light to generate a second electronic signal for brightness correction of the second light; The wavelength of the first light is greater than the wavelength of the second light, and in a top-view direction of the electronic device, the optical sensor overlaps with the switch element.

5. The electronic device as claimed in claim 4, characterized in that: The first light is green light and the second light is blue light.

6. The electronic device as claimed in claim 4, characterized in that: The optical sensor partially overlaps with the second light emitting diode in a thickness direction of the substrate.

7. The electronic device as claimed in claim 4, characterized in that: The first light and the second light are emitted simultaneously.

8. The electronic device as claimed in claim 4, characterized in that: The first light and the second light are not emitted at the same time.

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