Temperature adjustment device

Abstract

The present invention provides a temperature adjustment device capable of reducing the temperature difference within a first surface. The temperature adjustment device comprises a first component and a flow path. The first component is formed with a first surface set as an object of temperature control. The flow path is formed along the first surface inside the first component, one end of the flow path is set as an inlet for introducing a heat transfer medium, and the other end is set as an outlet for discharging the heat transfer medium. The flow path is formed such that the thermal resistance between the flow path and the first surface increases as the temperature moves from the outlet to the inlet.

Description

Technical Field

[0001] The invention relates to a temperature regulating device. Background Art

[0002] Patent Document 1 discloses a plasma processing apparatus that cools a substrate by flowing a refrigerant through a flow path provided inside a mounting table, thereby adjusting the temperature of the substrate mounted on the mounting table.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-011382 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of reducing the temperature difference within a first surface.

[0008] Solutions for solving problems

[0009] A temperature adjustment device of one embodiment of the present disclosure includes a first member and a flow path. The first member is formed with a first surface set as an object of temperature control. The flow path is formed inside the first member along the first surface, one end of the flow path is set as an inlet for introducing a heat transfer medium, and the other end is set as an outlet for discharging the heat transfer medium. The flow path is formed such that the thermal resistance between the first surface and the first surface increases as the heat transfer medium moves from the outlet to the inlet.

[0010] Effects of the Invention

[0011] According to the present disclosure, the temperature difference within the first surface can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic cross-sectional view showing an example of the structure of a plasma processing apparatus according to an embodiment.

[0013] Figure 2 This is a schematic cross-sectional view showing an example of a main part structure of a mounting table according to the embodiment.

[0014] Figure 3 1 is a plan view showing an example of the structure of the mounting table according to the embodiment when viewed from above.

[0015] Figure 4 It is a schematic cross-sectional view showing an example of the structure of the flow path of the mounting table according to the embodiment.

[0016] Figure 5 It is a schematic cross-sectional view showing the structure of a flow path of a mounting table according to a comparative example.

[0017] Figure 6 It is a diagram for explaining the thermal runaway range and development area when the refrigerant flows in the flow path.

[0018] Figure 7 This is a diagram showing an example of temperature change along the flow path of the mounting table according to the comparative example.

[0019] Figure 8 It is a diagram showing an example of simulation results according to the embodiment.

[0020] Fig. 9 It is a diagram showing another example of the simulation result according to the embodiment.

[0021] Fig.10 It is a diagram for explaining the thermal resistance of the mounting table according to the embodiment.

[0022] Fig.11 This is a diagram showing an example of changes in the heat transfer coefficient according to the embodiment.

[0023] Fig.12 It is a schematic cross-sectional view showing another example of the structure of the plasma processing apparatus according to the embodiment.

[0024] Description of Reference Numerals

[0025] 1: processing container; 2: mounting table; 2a: substrate; 2b: upper surface; 6: electrostatic suction cup; 6e: mounting surface; 8: wafer; 20: flow path; 20a: inlet; 20b: outlet; 21a: refrigerant inlet piping; 21b: refrigerant outlet piping; 16: shower head; 16a: main body; 100: plasma processing device; 220: flow path; 220a: inlet; 220b: outlet; 221a: refrigerant inlet piping; 221b: refrigerant outlet piping. DETAILED DESCRIPTION

[0026] Hereinafter, embodiments of the disclosed temperature control device will be described in detail based on the drawings. In addition, the disclosed technology is not limited to the present embodiments.

[0027] Conventionally, a plasma processing apparatus cools a substrate by allowing a refrigerant to flow through a flow path provided inside a mounting table. However, in a plasma processing apparatus, heat from the plasma is transferred to the refrigerant through the substrate and the mounting table, and the temperature of the refrigerant in the flow path changes due to the heat from the plasma. As a result, in a plasma processing apparatus, a temperature difference is generated in the refrigerant at the inlet and outlet of the flow path inside the mounting table, thereby generating a temperature difference within the mounting surface, resulting in a temperature difference in the substrate mounted on the mounting table. Therefore, it is desired to reduce the temperature difference within the surface.

[0028] (Implementation Method)

[0029] [Structure of plasma processing apparatus]

[0030] Figure 1 1 is a schematic cross-sectional view showing an example of the structure of a plasma processing apparatus 100 according to an embodiment. The plasma processing apparatus 100 includes a processing container 1, which is airtightly configured and electrically grounded. The processing container 1 is cylindrical and is made of, for example, aluminum. The processing container 1 defines a processing space for generating plasma. A mounting table 2 for horizontally supporting a semiconductor wafer (hereinafter referred to as a "wafer") 8 serving as a substrate is provided in the processing container 1. In the present embodiment, the mounting table 2 corresponds to a temperature adjustment device.

[0031] The stage 2 is configured to include a base 2a and an electrostatic chuck (ESC: Electro static chuck) 6. The base 2a is made of a conductive metal, such as aluminum, and has a function as a lower electrode. The electrostatic chuck 6 has a function for electrostatically adsorbing the wafer 8. The stage 2 is supported by a support table 4. The support table 4 is supported by a support member 3 made of, for example, quartz. In addition, a focusing ring 5 formed of, for example, single crystal silicon is provided on the outer periphery above the stage 2. In addition, a cylindrical inner wall member 3a made of, for example, quartz is provided in the processing container 1 so as to surround the stage 2 and the support table 4.

[0032] The substrate 2a is connected to the first RF power supply 10a via the first matching device 11a. In addition, the substrate 2a is connected to the second RF power supply 10b via the second matching device 11b. The first RF power supply 10a is a power supply for generating plasma. The first RF power supply 10a supplies high-frequency power of a specified frequency to the substrate 2a of the stage 2. The second RF power supply 10b is a power supply for attracting ions (for generating bias). The second RF power supply 10b supplies high-frequency power of a specified frequency lower than that of the first RF power supply 10a to the substrate 2a of the stage 2. In this way, the stage 2 is configured to be able to apply two high-frequency powers of different frequencies from the first RF power supply 10a and the second RF power supply 10b. On the other hand, above the stage 2, a shower head 16 having a function as an upper electrode is provided in a manner parallel to and facing the stage 2. The shower head 16 and the stage 2 function as a pair of electrodes (upper electrode and lower electrode).

[0033] The upper surface of the electrostatic chuck 6 is formed into a flat disk shape. The upper surface of the electrostatic chuck 6 is set as a mounting surface 6e for mounting the wafer 8. The electrostatic chuck 6 is composed of an electrode 6a sandwiched between insulators 6b. A DC power supply 12 is connected to the electrode 6a. The electrostatic chuck 6 adsorbs the wafer 8 by the Coulomb force generated by applying a DC voltage from the DC power supply 12 to the electrode 6a.

[0034] A flow path 20 is formed inside the substrate 2a. A refrigerant inlet pipe 21a is connected to one end of the flow path 20. A refrigerant outlet pipe 21b is connected to the other end of the flow path 20. The refrigerant inlet pipe 21a and the refrigerant outlet pipe 21b are connected to a cooling unit (not shown). The flow path 20 is located below the wafer 8 and functions by absorbing heat from the wafer 8. The plasma processing apparatus 100 is configured to control the mounting table 2 to a predetermined temperature by circulating a refrigerant such as cooling water, an organic solvent such as a heat transfer liquid (Galden), etc. from the cooling unit through the refrigerant inlet pipe 21a and the refrigerant outlet pipe 21b in the flow path 20.

[0035] In addition, the plasma processing apparatus 100 may also be configured to supply a heat transfer gas to the back side of the wafer 8 to control the temperature independently. For example, a gas supply pipe for supplying a heat transfer gas (ambient gas) such as helium may be provided on the back side of the wafer 8 in a manner penetrating the mounting table 2 or the like. The gas supply pipe is connected to a gas supply source not shown. Through these structures, the wafer 8 adsorbed and held on the upper surface of the mounting table 2 by the electrostatic chuck 6 is controlled to a predetermined temperature.

[0036] The shower head 16 is provided on the top wall of the processing container 1. The shower head 16 includes a main body 16a and an upper top plate 16b forming an electrode plate. The shower head 16 is supported on the upper part of the processing container 1 via an insulating member 95. The main body 16a is made of a conductive material such as aluminum with an anodized surface, and is configured to support the upper top plate 16b at the lower part in a detachable manner.

[0037] The main body 16a is provided with a gas diffusion chamber 16c inside. In addition, the main body 16a is formed with a plurality of gas flow holes 16d at the lower part of the gas diffusion chamber 16c. The upper top plate 16b is arranged such that the gas introduction hole 16e overlaps with the gas flow hole 16d, so that the upper top plate 16b is penetrated in the thickness direction. With such a structure, the processing gas supplied to the gas diffusion chamber 16c is dispersed and supplied into the processing container 1 in a spraying manner through the gas flow hole 16d and the gas introduction hole 16e.

[0038] A gas inlet port 16g for introducing a processing gas into the gas diffusion chamber 16c is formed in the main body 16a. One end of a gas supply pipe 15a is connected to the gas inlet port 16g. The other end of the gas supply pipe 15a is connected to a processing gas supply source (gas supply unit) 15 for supplying processing gas. On the gas supply pipe 15a, a mass flow controller (MFC) 15b and an opening and closing valve V2 are arranged in order from the upstream side. A processing gas for plasma etching is supplied from the processing gas supply source 15 to the gas diffusion chamber 16c via the gas supply pipe 15a. The processing gas is supplied from the gas diffusion chamber 16c to the processing container 1 in a dispersed manner in a spray shape via the gas flow hole 16d and the gas inlet hole 16e.

[0039] The shower head 16 is electrically connected to a variable DC power supply 72 via a low pass filter (LPF) 71. The variable DC power supply 72 is configured to be able to turn on / off the power supply by an on / off switch 73. The current / voltage of the variable DC power supply 72 and the on / off of the on / off switch 73 are controlled by a control unit 90 described later. In addition, when a high frequency is applied from the first RF power supply 10a and the second RF power supply 10b to the mounting table 2 to generate plasma in the processing space, the on / off switch 73 is turned on by the control unit 90 as needed to apply a prescribed DC voltage to the shower head 16.

[0040] A cylindrical ground conductor 1a is provided so as to extend from the side wall of the processing container 1 to a position above the height position of the shower head 16. The cylindrical ground conductor 1a has a ceiling wall at the upper portion.

[0041] An exhaust port 81 is formed at the bottom of the processing container 1. The exhaust port 81 is connected to an exhaust device 83 via an exhaust pipe 82. The exhaust device 83 has a vacuum pump. The exhaust device 83 operates the vacuum pump to reduce the pressure in the processing container 1 to a predetermined vacuum level. On the other hand, a wafer 8 loading and unloading port 84 is provided on the side wall of the processing container 1. A gate valve 85 is provided at the loading and unloading port 84 to open and close the loading and unloading port 84.

[0042] A sediment shield 86 is provided along the inner wall surface on the inner side of the processing container 1. The sediment shield 86 is used to prevent etching byproducts (sediments) from adhering to the processing container 1. A conductive member (GND block) 89 connected in a manner that can control the potential relative to the ground is provided at a height position substantially the same as the wafer 8 of the sediment shield 86, thereby preventing abnormal discharge. In addition, a sediment shield 87 extending along the inner wall member 3a is provided at the lower end of the sediment shield 86. The sediment shields 86 and 87 are provided to be detachable.

[0043] The operation of the plasma processing apparatus 100 having the above-described structure is centrally controlled by the control unit 90. The control unit 90 includes a process controller 91 having a CPU and controlling each unit of the plasma processing apparatus 100, a user interface 92, and a storage unit 93.

[0044] The user interface 92 includes a keyboard for the process manager to input commands to manage the plasma processing apparatus 100 , a display that visually displays the operating status of the plasma processing apparatus 100 , and the like.

[0045] The storage unit 93 stores control programs (software) for implementing various processes performed by the plasma processing apparatus 100 under the control of the process controller 91, recipes storing process condition data, etc. Then, as needed, an arbitrary recipe is called from the storage unit 93 by an instruction from the user interface 92, and the process controller 91 is caused to execute the recipe, thereby performing a desired process by the plasma processing apparatus 100 under the control of the process controller 91.

[0046] [Structure of the mounting table]

[0047] Next, refer to Figure 2 The main structure of the mounting table 2 will be described. Figure 2 It is a schematic cross-sectional view showing an example of the main structure of the mounting table 2 according to the embodiment.

[0048] The mounting table 2 has a substrate 2a and an electrostatic chuck 6. The electrostatic chuck 6 is formed in a disk shape. The electrostatic chuck 6 is fixed to the substrate 2a by an adhesive layer 7 in a coaxial manner with the substrate 2a. The upper surface of the electrostatic chuck 6 is set as a mounting surface 6e for mounting a wafer 8. A convex portion 6f is formed on the mounting surface 6e. The wafer 8 is mounted on the mounting surface 6e. A space 9 is formed between the mounting surface 6e and the wafer 8 by the convex portion 6f. A heat transfer gas such as helium is supplied to the space 9. When the plasma processing device 100 performs plasma processing, the heat from the plasma is input to the mounting table 2 via the wafer 8 and the space 9.

[0049] A flow path 20 is provided inside the substrate 2 a along the mounting surface 6 e . The plasma processing apparatus 100 is configured to be able to control the temperature of the mounting table 2 by flowing a coolant through the flow path 20 .

[0050] [Structure of flow path]

[0051] Next, the structure of the flow channel 20 of the mounting table 2 will be described. Figure 3 FIG. 2 is a plan view showing an example of the structure of the mounting table 2 according to the embodiment when viewed from above the mounting table 2. Figure 3 In FIG. 6 , the mounting surface 6e of the mounting table 2 is shown as a disk. Figure 3 As shown, the flow path 20 is formed in a spiral shape in the area corresponding to the mounting surface 6e inside the substrate 2a. An inlet 20a for introducing a refrigerant is provided at one end of the flow path 20, and a discharge port 20b for discharging the refrigerant is provided at the other end. The inlet 20a is connected to the refrigerant inlet piping 21a. The discharge port 20b is connected to the refrigerant outlet piping 21b. The refrigerant introduced from the refrigerant inlet piping 21a to the inlet 20a passes through the inside of the flow path 20, and the refrigerant that has passed through the inside of the flow path 20 is discharged from the discharge port 20b to the refrigerant outlet piping 21b. Thus, the plasma processing apparatus 100 controls the temperature of the wafer 8 in the entire area of ​​the mounting surface 6e of the mounting table 2.

[0052] Figure 4 It is a schematic cross-sectional view showing an example of the structure of the flow channel 20 of the mounting table 2 according to the embodiment. Figure 4 (A) schematically shows a cross section of the substrate 2 a along the flow path 20 . Figure 4 (B) schematically shows a cross section of the substrate 2a on a plane perpendicular to the flow of the refrigerant. Figure 4 In (A), a horizontal coordinate axis x is shown along the flow path 20. The position of the flow path 20 is described below by the position on the coordinate axis x. The position of the introduction port 20a on the flow path 20 is referred to as the position x. i The position of the outlet 20b on the flow path 20 is defined as position x eThe boundary between the thermal run-up zone and the development zone described later is defined as position x0. In addition, the thickness between the inner wall of the upper part of the flow path 20 and the upper surface 2b at position x on the flow path 20 is defined as t W (x). The temperature of the refrigerant at position x is set to temperature T m (x). The temperature of the upper surface 2b at position x is set to temperature T W (x). Let the heat flux input from the plasma at position x be q" (x). In addition, when the distribution of the plasma is considered to be uniform, the heat flux q" (x) of the plasma can also be set to a fixed heat flux q".

[0053] The upper surface 2b of the substrate 2a is formed as a flat surface. The flow path 20 is formed inside the substrate 2a along the upper surface 2b. One end of the flow path 20 is set as an inlet 20a for introducing the refrigerant, and the other end is set as a discharge port 20b for discharging the refrigerant. Figure 4 As shown in (B), the cross-sectional shape of the flow path 20 is rectangular, and the flow path 20 has the same cross-sectional shape from the introduction port 20a to the discharge port 20b.

[0054] The flow path 20 is formed such that the thermal resistance between the flow path 20 and the upper surface 2b increases as the thermal resistance increases from the outlet 20b to the inlet 20a. In the present embodiment, the thickness t between the inner wall of the upper portion of the flow path 20 and the upper surface 2b is changed. W (x) to change the thermal resistance with the mounting surface 6e. In this embodiment, the flow path 20 is formed to have a thickness of t W (x) increases from the discharge port 20b to the guide inlet 20a.

[0055] Here, the structure of the flow path 120 as a comparative example will be described. Figure 5 It is a schematic cross-sectional view showing the structure of the flow path 120 of the mounting table 2 according to the comparative example. Figure 5 (A) schematically shows a cross section of the substrate 2 a along the flow path 120 . Figure 5 (B) schematically shows a cross section of the substrate 2a on a plane perpendicular to the flow of the refrigerant. In the comparative example, a gap of thickness t between the substrate 2a and the upper surface 2b is formed on the substrate 2a. W The flow path 120 is set to be fixed.

[0056] In the plasma processing apparatus 100, heat from the plasma is transferred to the refrigerant in the flow path 120 through the wafer 8 and the mounting table 2, and the temperature of the refrigerant rises along the flow path 120. As a result, the temperature of the upper surface 2b of the substrate 2a rises along the flow path 120. As a result, the mounting table 2 generates a temperature difference within the plane of the mounting surface 6e, and generates a temperature difference within the plane of the mounted wafer 8.

[0057] In addition, when the refrigerant flows in the flow path 120, the refrigerant forms a section where there is heat input, that is, a thermal runaway section where the temperature boundary layer has not developed is formed on the upstream side, and a development area where the temperature boundary layer has developed is formed after the thermal runaway section. Figure 6 This is a diagram that illustrates the thermal runaway range and development area when the refrigerant flows in the flow path. Figure 6 , the case where the refrigerant flows in from the inlet 200a at one end of the tube 200 along the flow path 20, 120 is shown. When there is heat input from the surroundings of the tube 200, a temperature boundary layer 201 of temperature is formed along the inner wall in the refrigerant flowing in the tube 200. The temperature boundary layer 201 gradually develops toward the center as it flows downstream from the inlet 200a, and merges at the center of the tube 200. The interval L from the inlet 200a to the position where the temperature boundary layer 201 merges is T It is the thermal run-up zone. After the thermal run-up zone, a development zone is formed where the flow of the refrigerant has developed. Regarding the heat transfer coefficient of the refrigerant, the thermal run-up zone is higher than the development zone.

[0058] return Figure 5 When the refrigerant flows in the flow path 120, a thermal runaway zone is formed in the refrigerant near the inlet 120a, and a development zone is formed after the thermal runaway zone. The boundary between the thermal runaway zone and the development zone is set to position x0. The temperature T of the refrigerant m (x) As it rises along the flow path 120, the temperature T of the upper surface 2b of the substrate 2a W (x) also rises along the flow path 120.

[0059] Figure 7 It is a diagram showing an example of temperature change along the flow path 120 of the mounting table 2 according to the comparative example. Figure 7 The horizontal axis shows the position x along the flow path 120. The vertical axis shows the temperature T. i From position x0 to position x0 is the hot run-up interval. e The temperature of the refrigerant is T m (x) along the line from position x i To position x e The temperature T of the upper surface 2b of the substrate 2a rises. W (x) also rises. The heat transfer coefficient in the thermal run-up zone is higher than that in the development zone. Therefore, near the inlet 200a of the flow path 120, the temperature T of the upper surface 2b of the substrate 2a is W (x) becomes lower.

[0060] When the refrigerant flows in the flow paths 20 and 120, a heat runaway zone is formed in the refrigerant as a physical phenomenon. Therefore, it is difficult to produce a flow path with a uniform heat transfer coefficient. Figure 5As shown in FIG. 1 , the thickness between the substrate 2a and the upper surface 2b is set to a fixed thickness t W When the flow path 120 is formed in such a manner, the temperature of the wafer 8 increases as the refrigerant in the flow path 120 moves from the position x to the position x. i Flow to position x e In addition, a heat run-up zone with a high heat transfer coefficient is formed near the inlet 200a of the flow path 120, thereby generating a cold spot.

[0061] Therefore, in the plasma processing apparatus 100 according to the present embodiment, Figure 4 As shown in (A), the thickness t between the upper surface 2b W (x) The flow paths 20 are formed so as to increase from the discharge port 20b to the inlet port 20a.

[0062] Next, an example of a design method of the flow path 20 according to the present embodiment will be described. The temperature rise ΔT of the refrigerant caused by passing through the flow path 20 is m This is expressed as the following formula (1-1). In addition, for the temperature rise ΔT of the refrigerant m , the mass flow rate m of the refrigerant and the specific heat C of the refrigerant p There exists the relationship of the following formula (1-2).

[0063]

Number 1

[0064] ΔT m =T m (x e )-T m (x i ) …(1-1)

[0065]

[0066] Here,

[0067] T m (x i ) is the position x i The temperature of the refrigerant at [℃] or [K].

[0068] T m (x e ) is the position x e The temperature of the refrigerant at [℃] or [K].

[0069] m is the mass flow rate of refrigerant [kg / s].

[0070] C p is the specific heat of the refrigerant [J / kg·K].

[0071] q is the heat input from the plasma [W].

[0072] According to equations (1-1) and (1-2), the refrigerant mass flow rate m is expressed as in equation (2) below. Therefore, the heat q input from the plasma and the temperature rise ΔT of the refrigerant can be calculated by equation (2). m The mass flow rate m of the refrigerant can be calculated.

[0073]

Number 2

[0074]

[0075] The thickness t from the upper surface 2b at the position x of the designed flow path 20 is W In the case of (x), first, the thickness from the upper surface 2b at the position of the end of the flow path 20 is determined. Next, the thickness from the upper surface 2b is determined from the end of the flow path 20 based on the thickness at the position of the end of the flow path 20. In this embodiment, the thickness t from the upper surface 2b at the outlet 20b of the flow path 20 is first determined. W (x e ). For example, the thickness t W (x e ) can be calculated according to the following formula (3). In addition, in formula (3), the heat flux of plasma is set to a fixed heat flux q".

[0076]

Number 3

[0077]

[0078] Here,

[0079] t W (x e ) is the position x e The thickness from the upper surface 2b of the flow path 20 at .

[0080] T W (x e ) is the position x e The temperature of the upper surface 2b of the flow path 20 at [°C] or [K].

[0081] T m (x e ) is the position x e The temperature of the refrigerant at [℃] or [K].

[0082] q” is the heat flux input from the plasma [W / m 2 ].

[0083] h(x) is the heat transfer coefficient of the flow path 20 at position x [W / m 2 ·K].

[0084] h(xe ) is the position x e The heat transfer coefficient of the flow path 20 at [W / m 2 ·K].

[0085] kW(x) is the thermal conductivity [W / m·K] of the substrate 2a at the position x.

[0086] kW(x e ) is the position x e Thermal conductivity of substrate 2a at [W / m·K].

[0087] For example, according to the position x of the discharge port 20b e The temperature T of the upper surface 2b at W (x e ), the temperature of the refrigerant T m (x e ), heat transfer coefficient h(x e ), the thermal conductivity kW of the substrate 2a (x e ) and heat flux q", the thickness t is determined by equation (3) W (x e ).

[0088] Next, the thermal runaway range (position x0 to x i ) and development area (position x0~x e ). The refrigerant flows in a laminar flow or a turbulent flow in the flow path 20 according to the Reynolds number Re of the refrigerant. The Reynolds number Re of the refrigerant can be calculated according to the following formula (4).

[0089]

Number 4

[0090]

[0091] Here,

[0092] ρ is the density of the refrigerant [kg / m 3 ].

[0093] u m is the average flow velocity of the refrigerant [m / s].

[0094] μ is the viscosity of the refrigerant [Pa·s].

[0095] A is the cross-sectional area of ​​the flow path 20 [m 2 ].

[0096] D H D is the hydraulic diameter of the flow path 20. H According to D H =4A / P wet Find out.

[0097] P wet It is the wet perimeter [m] of the flow path 20, for example, the length of the wall surface in contact with the refrigerant in the cross section of the flow path 20 in a plane perpendicular to the flow of the refrigerant.

[0098] Theoretically, the length Δx of the thermal runaway zone of the flow path 20 is 0i Depending on the Reynolds number Re of the refrigerant, it becomes as shown in the following equations (5-1) and (5-2).

[0099]

Number 5

[0100] Laminar flow area (Re≤2300): Δx 0i =x i -x0≈0.05RePr·D H …(5-1)

[0101] Turbulent area (Re>2300): Δx 0i =x i -x0≈10D H …(5-2)

[0102] Here,

[0103] Pr is the Prandtl number of the refrigerant.

[0104] Δx 0i is the length of the thermal runaway section of the flow path 20 [m].

[0105] In fact, in the case of turbulent flow, the length of the thermal run-up interval Δx 0i The hydraulic diameter D in the flow path 20 H In the case of turbulent flow, the thermal run-up interval is determined to be from the position x of the inlet 20a. i From the position x i The length between is, for example, the hydraulic diameter D H In the case of laminar flow, the thermal run-up interval is determined to be the interval from the position x0 of the inlet 20a to a certain length between 2 and 10 times. i From the position x i The length between is the length of formula (5-1) up to position x0. The development region is determined as the area from position x0 to position x after the thermal run-up section of the flow channel 20. e range.

[0106] Next, regarding the thermal run-up zone (position x0 to x i ) and development area (position x0~x e), the thickness between the flow path 20 and the upper surface 2b at each position is determined as follows: the thickness between the flow path 20 and the upper surface 2b increases as it moves from the discharge port 20b to the guide port 20a.

[0107] Regarding the development area, it is possible to e The thickness at t W (x e ) as a reference, the thickness t from the upper surface 2b at the position x of the flow path 20 is calculated according to the following formula (6): W (x).

[0108]

Number 6

[0109]

[0110] For example, based on equation (6), the thickness t at position x0, which is the boundary between the thermal runaway zone and the development zone, is calculated as follows: W (x0).

[0111]

Number 7

[0112]

[0113] For example, regarding the development area (position x0~x e ), the thickness t at position x of the flow path 20 W (x) is determined from the position x shown in equation (6) e The thickness at t W (x e ) increases linearly to the thickness t at position x0 as shown in equation (7) W (x0).

[0114] Regarding the thermal run-up interval, it can be based on the position x e The thickness at t W (x e ) as a reference, the thickness t at the position x of the flow path 20 is calculated according to the following formula (8): W (x).

[0115]

Number 8

[0116]

[0117] In the development region, the heat transfer coefficient h(x) is a fixed value h. For example, the heat transfer coefficient h in the development region can be obtained by the following formula (9).

[0118]

Number 9

[0119]

[0120] Here,

[0121] Pr is the Prandtl number of the refrigerant.

[0122] D H is the hydraulic diameter of the flow path 20 .

[0123] k is the thermal conductivity of the refrigerant [W / m·K].

[0124] Thermal run-up interval (position x0~x i ) has a heat transfer coefficient h(x) of i Theoretically, the heat transfer coefficient h(x i )=∞, but the thickness near the inlet 20a increases, and the heat diffusion in the lateral direction can no longer be ignored, so it is necessary to appropriately estimate h(x i In the region where the refrigerant is turbulent, if h(x i )=1.1h~2.0h, then the thickness t of the flow path can be calculated according to formula (8): W (x).

[0125] In the region where the refrigerant is turbulent, the thermal runaway interval is very short. Therefore, in the region where the refrigerant is turbulent, the thickness t at the position x of the thermal runaway interval is set to W (x) is determined as the thickness t at position x0 W (x0) increases linearly to position x i The thickness at t W (x i ).

[0126] In the design method according to the present embodiment, if the flow path 20 is designed so that the heat input from the plasma is the maximum value that can be taken, better temperature uniformity can be obtained for heat input smaller than the maximum value.

[0127] When the substrate 2a is made of a material with low thermal conductivity such as titanium or stainless steel, the thickness t at the inlet 20a is W (x i ) compared to the thickness t at the outlet 20b W (x e On the other hand, when the substrate 2a is made of a base material with high thermal conductivity such as alumina, the thickness t at the inlet 20a is W (x i ) compared to the thickness t at the outlet 20b W (x e ) becomes very large. In this case, a material with low thermal conductivity such as stainless steel, titanium, alumina ceramics or a sprayed film may be provided at the top of the flow path 20.

[0128] Furthermore, when the upper and lower surfaces or four surfaces of the flow path 20 are heated in addition to the electrostatic chuck 6, if the thickness of the wall around the flow path 20 is designed by the design method involved in this embodiment, the temperature of the outer wall of the flow path 20 can be made uniform along the flow path 20. Furthermore, in the case of the flow path 20 having a circular cross-sectional shape or a flow path 20 having another cross-sectional shape, if the thickness of the wall of the heat receiving surface is designed by the design method involved in this embodiment, the temperature of the outer wall of the flow path from the inlet 20a to the outlet 20b can be made uniform along the flow path 20.

[0129] Next, an example of a specific structure of the flow path 20 is described. Figure 4 In the flow path 20 shown in the figure, the width and height of the flow path 20 are set to 12 mm, and the length of the flow path 20 (position x i ~x e ) was set to 4.5 mm, and the width W of the heating surface for heat input from the plasma to the flow path 20 was set to 22 mm. In addition, the heat input from the plasma was set to 950 [W], and the heat flux from the plasma was set to 50000 [W / m 2 ] Refrigerant temperature rise ΔT m The temperature was set to 5.84°C. The refrigerant was Novec 7200 from 3M Company, and the mass flow rate m of the refrigerant was set to 0.821 [kg / s]. The material of the substrate 2a was set to titanium. The thickness t at the outlet 20b was W (x e ) is set to 1mm. Thermal run-up range (position x0~x i ) is set to 3·D H =36mm. Position x of the introduction port 20a i Assuming that x=0 mm, the position x of the discharge port 20b is e The position x0 that becomes the boundary between the thermal run-up period and the development region is x=36 mm, which is the position x from the discharge port 20b. e The distance on the upstream side is 4500-36=4461mm.

[0130] When the design method according to the present embodiment as described above is used, the thickness t at the position x0 is calculated. W (x0) is 3.50 mm. In addition, the position x is calculated i The thickness at t W (x i ) is 6.04mm.

[0131] In the mounting table 2 according to the present embodiment, the flow path 20 is formed such that the thickness t between the flow path 20 and the upper surface 2b increases from the discharge port 20b to the inlet port 20a. W(x) increases. For example, the flow path 20 is formed as follows: e To position x0 (x = 4500mm ~ 36mm), thickness t W (x) increases linearly from 1 mm to 3.50 mm. In addition, the flow path 20 is formed such that: i Between (x = 36mm ~ 0mm), thickness t W (x) increases linearly from 3.50 mm to 6.04 mm.

[0132] The following simulation was performed: a ceramic plate was attached to the mounting table 2 formed with such a flow path 20, and the wafer 8 was cooled using helium gas. The heat input from the plasma was set to 4950 [W], and the heat flux from the plasma was set to 50000 [W / m 2 ]. And, as a comparative example, Figure 5 As shown, the thickness t between the upper surface 2b W The same simulation was performed for the case where the flow path 120 was fixed.

[0133] Figure 8 It is a diagram showing an example of simulation results according to the embodiment. Figure 8 The horizontal axis of represents the position x from the inlet 20a. The vertical axis represents the temperature of the upper surface of the mounting table 2. In the flow path 120 according to the comparative example, the temperature of the upper surface of the mounting table 2 is i ~x e As a result, a temperature difference is generated in the mounting surface 6e of the mounting table 2, resulting in a temperature difference in the surface of the mounted wafer 8.

[0134] On the other hand, the flow channel 20 according to the present embodiment can make the temperature of the upper surface of the mounting table 2 substantially uniform. Thus, the mounting table 2 can make the temperature of the mounted wafer 8 substantially uniform and reduce the temperature difference within the surface of the wafer 8.

[0135] In addition, the heat input from the plasma was set to 2475 [W], which is half of 4950 [W], and the same simulation was performed on the mounting table 2 formed with the flow path 20 according to the present embodiment and the mounting table 2 formed with the flow path 120 according to the comparative example.

[0136] Fig. 9 A diagram showing another example of simulation results according to the embodiment. Fig. 9The horizontal axis represents the position x from the inlet 20a. The vertical axis represents the temperature of the upper surface of the mounting table 2. Even when the heat input from the plasma is halved, the flow path 20 involved in this embodiment can make the temperature of the upper surface of the mounting table 2 substantially uniform. On the other hand, in the flow path 120 involved in the comparative example, the temperature of the upper surface of the mounting table 2 rises along the flow path 120.

[0137] In this way, the mounting table 2 in which the flow channel 20 according to the present embodiment is formed can reduce the temperature difference within the surface of the mounted wafer 8 .

[0138] Here, in the structure of the mounting table 2 described above, the thermal resistance between the flow path 20 and the mounting surface 6e is changed by changing the thickness between the inner wall of the upper part of the flow path 20 and the upper surface 2b. However, the mounting table 2 may also change the thermal resistance between the flow path 20 and the mounting surface 6e by changing the thickness or material of the member between the flow path 20 and the mounting surface 6e.

[0139] The thermal resistance of the mounting table 2 will be described. Fig.10 2 is a diagram illustrating the thermal resistance of the mounting table 2 according to the embodiment. Fig.10 , a cross section of the mounting table 2 at a plane perpendicular to the flow of the refrigerant at a position x is schematically shown.

[0140] The mounting table 2 is composed of a plurality of stacked components such as a substrate 2a, an adhesive layer 7, and an electrostatic chuck 6. A wafer 8 is placed on the electrostatic chuck 6. Fig.10 In the figure, the thermal resistance between the flow path 20 at position x and the upper surface 2b of the substrate 2a is represented as thermal resistance R1(x). In addition, the thermal resistance of the adhesive layer 7 at position x is represented as thermal resistance R2(x). In addition, the thermal resistance of the electrostatic suction cup 6 at position x is represented as thermal resistance R3(x). In addition, the thermal resistance between the electrostatic suction cup 6 at position x and the wafer 8 is represented as thermal resistance R4(x). In addition, the thermal resistance of the wafer 8 at position x is represented as thermal resistance R5(x). In addition, the heat flux q"(x) from the plasma at position x is shown. In addition, the temperature T of the wafer 8 at position x is shown. W (x). In addition, the temperature T of the refrigerant at position x is shown. m (x). In addition, the heat flux q input to the refrigerant at position x is shown. inner (x).

[0141] In the thermal equilibrium state where the temperature of the wafer 8 and the mounting table 2 is constant by heat input from the plasma and cooling by the refrigerant, the heat input from the plasma and the heat released by the refrigerant are approximately equal. That is, q" (x) ≈ q" inner (x). In addition, the temperature T of the wafer 8 at the position x is W(x), when the temperature of wafer 8 is uniform, even at position x e The temperature will be the same everywhere, so T W (x) = T W (x e )=T W .

[0142] The thermal resistance between the wafer 8 and the flow path 20 at the position x is the thermal resistance R of each member between the wafer 8 and the flow path 20 n The value obtained by summing up is expressed as the following formula (10). Fig.10 In FIG. 1 , it is assumed that n=5, and the thermal resistance between the wafer 8 and the flow path 20 at the position x is a value obtained by summing the thermal resistances R1 to R5.

[0143]

Number 10

[0144]

[0145] The temperature of the refrigerant at position x is T m (x) is represented by the following formula (11).

[0146]

Number 11

[0147]

[0148] Here,

[0149] T m (x i ) is the position x i The temperature of the refrigerant at the location ([℃] or [K]).

[0150] W is the width [m] of the heating surface for heat input from the plasma to the flow path 20. For example, when the flow paths 20 are formed in a spiral shape at a fixed interval, W is set to the width between the midpoints of the adjacent flow paths 20.

[0151] Position x of the outlet 20b e The thermal resistance between the wafer 8 and the flow path 20 at φ is expressed as the following equation (12).

[0152]

Number 12

[0153]

[0154] Here,

[0155] T W is the temperature of the wafer 8 ([°C] or [K]).

[0156] T m (x e ) is the position xe The temperature of the refrigerant at the location ([℃] or [K]).

[0157] q”(x e ) is the position x e The heat flux from the plasma at [W / m 2 ].

[0158] h(x e ) is the position x e The heat transfer coefficient of the flow path at [W / m 2 ·K].

[0159] In the development region, the heat transfer coefficient h(x) is a fixed h∞. Therefore, in the development region, the thermal resistance between the wafer 8 and the flow path 20 at the position x may satisfy the following formula (13).

[0160]

Number 13

[0161]

[0162] On the other hand, in the thermal runaway section of the flow channel 20 or the region where the heat transfer coefficient h(x) changes, the thermal resistance between the wafer 8 and the flow channel 20 at the position x may satisfy the following equation (14).

[0163]

Number 14

[0164]

[0165] When the heat flux q" (x) from the plasma is distributed, the above equations (11) to (14) are used. On the other hand, when the heat flux q" (x) from the plasma is a fixed value q", the position x of the outlet 20b shown in the above equation (12) is e The thermal resistance between the wafer 8 and the flow path 20 at φ 2 becomes the following formula (15).

[0166]

Number 15

[0167]

[0168] When the heat flux q"(x) from the plasma is a fixed value q", the thermal resistance between the wafer 8 and the flow path 20 at the position x represented by the above equation (13) becomes the following equation (16).

[0169]

Number 16

[0170]

[0171] The second term on the right side of equation (16) is the left side of equation (15). Therefore, in the development region, the thermal resistance between the wafer 8 and the flow path 20 at position x is equal to the thermal resistance at position x of the outlet 20b of the flow path 20. e The distance from (|x e -x|) increases accordingly.

[0172] In addition, when the heat flux q"(x) from the plasma is a fixed q", in the thermal run-up interval of the flow path 20 or the area where the heat transfer coefficient h(x) changes, the thermal resistance between the wafer 8 at position x and the flow path 20 shown in the above formula (14) becomes the following formula (17).

[0173]

Number 17

[0174]

[0175] The first and third terms on the right side of equation (17) are the right side of equation (16). Therefore, in the thermal run-up interval of the flow path 20 or the region where the heat transfer coefficient h(x) changes, the thermal resistance between the wafer 8 and the flow path 20 at position x increases compared to the development region.

[0176] The heat transfer coefficient h(x) becomes a very large value at the introduction port 20a, decreases sharply as the distance from the introduction port 20a increases, and does not change after exceeding the thermal runaway interval. Fig.11 This is a diagram showing an example of changes in the heat transfer coefficient according to the embodiment. Fig.11 The horizontal axis represents the position x on the flow path 20. The vertical axis represents the heat transfer coefficient. The heat transfer coefficient h(x) at the position x of the inlet 20a is i becomes a very large value, and becomes h∞ when it exceeds the thermal run-up interval. As mentioned above, the length of the thermal run-up interval Δx 0i According to the Reynolds number of the refrigerant, Re becomes as shown in equations (5-1) and (5-2).

[0177] In the case of laminar flow, the heat transfer coefficient h∞ of the development region depends on the cross-sectional shape. For example, when the cross-sectional shape is circular, the heat transfer coefficient h∞ is calculated according to the following formula (18).

[0178] h∞=4.36(k / D H )…(18)

[0179] Here,

[0180] k is the thermal conductivity of the refrigerant [W / m·K].

[0181] D H is the hydraulic diameter of the flow path 20 .

[0182] When the cross-sectional shape is other than a circle, the heat transfer coefficient h∞ of the development zone can be obtained from a manual showing a method for calculating the heat transfer coefficient, experimental results, or thermal flow simulation. In addition, in the case of turbulent flow, the heat transfer coefficient h∞ of the development zone can be obtained, for example, from the above-mentioned formula (9).

[0183] In the case of laminar flow, the heat transfer coefficient h(x) of the thermal run-up interval depends on the cross-sectional shape and can be obtained from a manual showing a method for calculating the heat transfer coefficient, experimental results, or thermal flow simulation. In addition, in the case of turbulent flow, the heat transfer coefficient h(x) of the thermal run-up interval can also be obtained from a manual showing a method for calculating the heat transfer coefficient, experimental results, or thermal flow simulation.

[0184] By finding the heat transfer coefficient h(x) in the thermal run-up zone and the heat transfer coefficient h∞ in the development zone and substituting them into the above equations (11) to (17), it is possible to find the conditions for the thermal resistance of each component between the wafer 8 and the flow path 20 so that the temperature of the upper surface of the mounting table 2 becomes substantially uniform. Fig.10 In the case where R2(x) to R5(x) are determined, the thermal resistance R1(x) between the flow path 20 and the upper surface 2b of the substrate 2a is changed so as to satisfy the condition. For example, the thickness between the inner wall of the upper part of the flow path 20 and the upper surface 2b and the material of the substrate 2a are locally changed to change the value obtained by summing the thermal resistances R1(x) to R5(x) so as to satisfy the condition. Thus, the flow path 20 can make the temperature of the upper surface of the mounting table 2 roughly uniform. As a result, the mounting table 2 can make the temperature of the mounted wafer 8 roughly uniform, thereby reducing the temperature difference within the surface of the wafer 8.

[0185] As described above, the mounting table 2 involved in this embodiment has a substrate 2a and a flow path 20. The flow path 20 is formed along the upper surface 2b inside the substrate 2a, and one end of the flow path 20 is set as an inlet 20a for introducing a refrigerant, and the other end is set as a discharge port 20b for discharging the refrigerant. The flow path 20 is formed so that the thermal resistance between the upper surface 2b increases as it goes from the discharge port 20b to the inlet 20a. As a result, the mounting table 2 can reduce the temperature difference within the surface of the upper surface 2b. As a result, the mounting table 2 can make the temperature of the wafer 8 placed thereon roughly uniform, thereby reducing the temperature difference within the surface of the wafer 8.

[0186] In addition, the substrate 2a involved in this embodiment has heat input from the plasma on the upper surface 2b. The flow path 20 is formed so that the thermal resistance between the upper surface 2b increases from the discharge port 20b to the inlet 20a in accordance with the temperature gradient of the refrigerant flowing from the inlet 20a to the discharge port 20b. Thus, the mounting table 2 can reduce the temperature difference within the surface of the upper surface 2b.

[0187] In addition, the flow path 20 involved in the present embodiment is formed such that, by the refrigerant introduced from the inlet 20a, the degree of increase in thermal resistance in the thermal runaway zone where the temperature boundary layer has not developed is greater than the degree of increase in thermal resistance in the developed zone where the temperature boundary layer has developed. Thus, the mounting table 2 can suppress the occurrence of cold spots in the area corresponding to the thermal runaway zone on the upper surface 2b.

[0188] In addition, the flow channel 20 according to the present embodiment is formed so as to satisfy the above-mentioned formula (13) in the development region. Thus, the mounting table 2 can reduce the temperature difference in the region corresponding to the development region of the upper surface 2b.

[0189] In addition, the flow channel 20 according to the present embodiment is formed so as to satisfy the above-mentioned formula (14) in the thermal runaway zone. Thus, the mounting table 2 can reduce the temperature difference in the region of the upper surface 2b corresponding to the thermal runaway zone.

[0190] In addition, the flow path 20 according to the present embodiment is formed to have a thickness t W (x) increases from the discharge port 20b to the guide port 20a. The mounting table 2 can be changed by changing the thickness t W (x) By changing the thermal resistance with the upper surface 2b, the temperature difference within the surface of the upper surface 2b can be reduced.

[0191] The above describes the embodiments, but it should be considered that the embodiments disclosed this time are illustrative in all aspects and are not restrictive. In fact, the above embodiments can be implemented in various forms. In addition, the above embodiments can also be omitted, replaced, and changed in various forms without departing from the scope of the claims and their gist.

[0192] For example, in the above-mentioned embodiment, as a temperature adjustment device, the mounting table 2 is taken as an example and the case where the temperature difference is reduced in the plane of the wafer 8, the mounting surface 6e, and the upper surface 2b of the substrate 2a is described. However, it is not limited to this. It can also be applied to other parts of the plasma processing device 100. For example, in the plasma processing device 100, sometimes a flow path is set in the upper electrode and a refrigerant is circulated to perform temperature control so as to cool the upper electrode. In addition, in the plasma processing device 100, sometimes a flow path is set in the side wall of the processing container 1 and a refrigerant is circulated to perform temperature control so as to cool the processing container 1 uniformly. The design method of the embodiment can also be applied to a flow path for temperature control like this. Fig.12 1 is a schematic cross-sectional view showing another example of the structure of the plasma processing apparatus 100 according to the embodiment. The plasma processing apparatus 100 is provided with a shower head 16 having a function as an upper electrode. Fig.12In the embodiment, the shower head 16 corresponds to the temperature adjustment device. The shower head 16 includes a main body 16a and an upper top plate 16b. The lower surface of the main body 16a is set as a flat surface, and a flow path 220 is set along the lower surface. An inlet 220a connected to the refrigerant inlet piping 221a is set at one end of the flow path 220, and an outlet 220b connected to the refrigerant outlet piping 221b is set at the other end. The shower head 16 becomes high temperature due to the heat input from the plasma. The plasma processing device 100 is configured to control the temperature of the shower head 16 by allowing the refrigerant to flow in the flow path 220. It is also possible to apply the design method of the embodiment to such a flow path 220, so that the thickness between the lower surface of the main body 16a increases as the discharge port 220b goes to the inlet port 220a. As a result, the flow path 220 can make the temperature of the lower surface of the main body 16a roughly uniform, and can reduce the temperature difference within the surface of the shower head 16.

[0193] In addition, in the above-mentioned embodiment, the case where the heat source for inputting heat to the mounting table 2 is set as plasma and the heat from the plasma is released through the flow path 20 is described as an example. However, it is not limited to this. A heat source other than plasma can also be used. In the mounting table 2, a heater as a heat source is sometimes provided on the entire surface of the mounting surface 6e to control the temperature of the wafer 8. In this case, by designing the flow path 20 in a manner that also includes the heat input from the heater, even in the case where a heater is provided, the temperature difference can be reduced within the surface of the wafer 8, the mounting surface 6e, and the upper surface 2b of the substrate 2a.

[0194] In addition, in the above-mentioned embodiment, the case where the mounting table 2 is cooled by circulating a heat transfer medium such as a refrigerant having a lower temperature than the mounting table 2 in the flow path 20 is described as an example. However, the present invention is not limited thereto. A heat transfer medium having a higher temperature than the mounting table 2 may be circulated in the flow path 20 to perform temperature control to increase the temperature of the mounting table 2. In this case, by appropriately changing the signs of the heat fluxes q", q"(x), etc., even in the case of temperature control to increase the temperature, the temperature difference can be reduced within the plane of the wafer 8, the mounting surface 6e, and the upper surface 2b of the substrate 2a.

[0195] In addition, in the above-mentioned embodiment, the case where there is only one flow path 20 formed on the mounting table 2 is described as an example. However, it is not limited to this. It is also possible that a plurality of flow paths 20 are divided into a central part, an intermediate part, and an outer peripheral part in a concentric circle shape from the center of the mounting table 2 inside the substrate 2a. In this case, by circulating refrigerants of different temperatures in each flow path, a temperature distribution having a temperature gradient in the radial direction from the center of the mounting table 2 and a smaller temperature difference in the circumferential direction can be achieved.

[0196] In addition, the above-mentioned plasma processing apparatus 100 is a capacitively coupled plasma processing apparatus, but any plasma processing apparatus can be used. For example, the plasma processing apparatus 100 can be any type of plasma processing apparatus, such as an inductively coupled plasma processing apparatus, or a plasma processing apparatus that excites gas by surface waves such as microwaves.

[0197] In addition, in the above-mentioned embodiment, the case where the first RF power source 10a and the second RF power source 10b are connected to the substrate 2a is described as an example, but the structure of the plasma source is not limited to this. For example, the first RF power source 10a for generating plasma may be connected to the shower head 16 having a function as an upper electrode. In addition, the second RF power source 10b for attracting ions (for generating bias voltage) may also be connected to the substrate 2a.

[0198] In addition, the above-mentioned plasma processing device 100 is a plasma processing device that performs etching as a plasma processing, but a plasma processing device that performs any plasma processing can be used. For example, the plasma processing device 100 can be a single-wafer deposition device that performs chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), etc., and can also be a plasma processing device that performs plasma annealing, plasma injection, etc.

[0199] In the above-mentioned embodiment, the case where the substrate is a semiconductor wafer is described as an example, but the present invention is not limited to this and the substrate may be another substrate such as a glass substrate.

Claims

1. A temperature adjustment device, characterized in that: have: A first member formed with a first surface set as a subject of temperature control; as well as a flow path formed along the first surface inside the first member, one end of the flow path being set as an inlet for introducing a heat transfer medium, and the other end being set as an outlet for discharging the heat transfer medium, The flow path is formed such that the thermal resistance between the flow path and the first surface increases from the outlet to the inlet. The flow path is formed such that, due to the heat transfer medium introduced from the introduction port, the degree of increase in thermal resistance in the thermal runaway zone where the temperature boundary layer has not developed is greater than the degree of increase in thermal resistance in the development zone where the temperature boundary layer has developed.

2. The temperature adjustment device according to claim 1, characterized in that: The first component has heat input from a heat source on the first surface, The flow path is formed such that, according to a temperature gradient of the heat transfer medium flowing from the introduction port toward the discharge port, thermal resistance between the flow path and the first surface increases from the discharge port toward the introduction port.

3. The temperature adjustment device according to claim 1, characterized in that: The first member includes a plurality of members stacked between a mounting surface for mounting a substrate and the first surface. When the thermal resistance of a member i between the substrate including the first member and the plurality of members and the flow path at a position x along the flow path is set to R i (x) Set the temperature of the substrate to T W , set the temperature of the heat transfer medium to T m (x), assuming that the heat flux to the substrate is q”(x), and the heat transfer coefficient of the flow path is h∞, the flow path is formed to satisfy the following formula (1) in the development region, 【Number 1】 4. The temperature adjustment device according to claim 1, characterized in that: The first member includes a plurality of members stacked between a mounting surface for mounting a substrate and the first surface. When the thermal resistance of a member i between the substrate including the first member and the plurality of members and the flow path at a position x along the flow path is set to R i (x) Set the temperature of the substrate to T W , set the temperature of the heat transfer medium to T m (x), assuming that the heat flux to the substrate is q" (x), and the heat transfer coefficient of the flow path is h (x), the flow path is formed to satisfy the following formula (2) in the thermal runaway interval, 【Number 2】 5. The temperature adjustment device according to any one of claims 1 to 4, characterized in that: The flow path is formed such that a thickness thereof with respect to the first surface increases from the discharge port toward the introduction port.

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