Compensation Chip, Screen Adapter Board, Electronic Device and Data Processing Method

Abstract

The present application provides a compensation chip, a screen adapter board, an electronic device and a data processing method. The compensation chip includes a processor and a memory that are coupled to each other. The memory can store a calibration parameter set including a plurality of calibration parameters, and the plurality of calibration parameters therein are in one-to-one correspondence with a plurality of sensors to be calibrated respectively. Each calibration parameter can be used to calibrate the read electrical value of the induced signal generated by the corresponding sensor after sensing the sensing information. The processor can read the above-mentioned plurality of calibration parameters, and use each of the plurality of calibration parameters read to calibrate the read electrical value of the induced signal generated by the corresponding sensor, so as to obtain the calibrated electrical value of the induced signal generated by each sensor. Among them, the calibrated electrical values of the induced signals generated by every two sensors according to the same sensing information are the same. By using the above compensation chip, the difference in sensing capabilities between different sensors can be compensated.

Description

Technical Field

[0001] The present application relates to the field of sensing technologies, and particularly to a compensation chip, a screen adapter board, an electronic device, and a data processing method. Background Art

[0002] Currently, sensors are provided in most electronic devices. For example, multiple photo diode (PD) sensors are integrated in the display screens of some electronic devices to implement the function of under-screen optical fingerprint recognition.

[0003] The PD sensor can generate an induction signal when it senses light. In the display screen of an electronic device, multiple PD sensors arranged in an array are integrated in the thin film transistor (TFT) layer of the display screen. The TFT layer is located below the Organic Light-Emitting Diode (OLED) layer, and the positions of the multiple PDs in the TFT layer correspond one-to-one to the positions of the multiple pixels in the OLED layer. Taking the fingerprint recognition function as an example, when a user performs fingerprint recognition, the electronic device lights up the OLED layer in the display screen. When the user's finger presses the display screen, the light emitted by the OLED layer below the pressed position of the display screen is reflected by the fingerprint protrusions on the surface of the user's finger, and the reflected light can pass through the gaps between the pixels in the OLED layer, and thus is sensed by the PD sensor below the pressed position. After the PD sensor below the pressed position senses the light, it can generate an induction signal, and the processor in the electronic device can further obtain the fingerprint image of the user according to the position of the PD sensor that generates the induction signal in the display screen.

[0004] However, due to the limitations of the manufacturing process of the PD sensor, the induction ability of the PD sensor to the optical signal is different, resulting in that the recognition effect of the fingerprint image by the electronic device still needs to be further improved. Summary of the Invention

[0005] In view of this, the present application provides a compensation chip, a screen adapter board, an electronic device, and a data processing method, so that the induction signals respectively generated by multiple sensors that sense the same sensing information can have the same calibrated electrical value, and thus it is beneficial to compensate for the difference in induction ability between the multiple sensors.

[0006] In a first aspect, an embodiment of the present application provides a compensation chip, including a processor and a memory that are coupled to each other. Among them, the memory can store a calibration parameter set, which includes a plurality of calibration parameters, and the plurality of calibration parameters in the calibration parameter set are in one-to-one correspondence with a plurality of sensors to be calibrated respectively. Each calibration parameter can be used to calibrate the read electrical value of the induced signal generated by the corresponding sensor after sensing the sensing information. The processor can read the plurality of calibration parameters in the above-mentioned calibration parameter set from the memory, and use each calibration parameter in the read plurality of calibration parameters to calibrate the read electrical value of the induced signal generated by the corresponding sensor, so as to obtain the calibrated electrical value of the induced signal generated by each sensor. Among them, the calibrated electrical values of the induced signals generated by any two of the above-mentioned plurality of sensors according to the same sensing information are the same.

[0007] In the embodiment of the present application, the electrical value can be a voltage value or a current value, which will not be elaborated here. Due to limitations such as sensor manufacturing processes, at least two of the above-mentioned plurality of sensors to be calibrated have different read electrical values of the induced signals generated respectively according to the same sensing information. For example, after PD sensor A and PD sensor B sense the same optical signal, the read electrical value of the induced signal generated by PD sensor A is 1 mV, and the read electrical value of the induced signal generated by PD sensor B is 1.5 mV. The processor uses each calibration parameter in the read plurality of calibration parameters to calibrate the read electrical value of the induced signal generated by the corresponding sensor, which can make the calibrated electrical values of the induced signals generated by any two of the above-mentioned plurality of sensors according to the same sensing information the same. Therefore, even if the sensing capabilities of PD sensor A and PD sensor B for the optical signal are different, after PD sensor A and PD sensor B sense the same optical signal, the induced signals generated by them respectively can still have the same calibrated electrical value. Therefore, the compensation chip provided by the embodiment of the present application can compensate for the differences in sensing capabilities between different sensors.

[0008] In a possible implementation manner, the above-mentioned calibration parameter set can be obtained by the following method: obtaining the test electrical values of the induced signals generated by the above-mentioned plurality of sensors respectively after sensing the test sensing information; then, determining a reference electrical value from the test electrical values of the induced signals generated by the above-mentioned plurality of sensors respectively; furthermore, constructing a calibration parameter set according to the determined reference electrical value, where the calibration parameter set includes a plurality of calibration parameters, and the plurality of calibration parameters are in one-to-one correspondence with the above-mentioned plurality of sensors, and each calibration parameter is the ratio between the reference electrical value and the test electrical value of the induced signal generated by the sensor corresponding to this calibration parameter.

[0009] It should be noted that the measured electrical values of the induction signals respectively generated by multiple sensors in the embodiments of the present application refer to the measured electrical values of the induction signals respectively generated by the above-mentioned multiple sensors after sensing the test induction information. In the embodiments of the present application, the test sensing information may be any sensor information that the above-mentioned multiple sensors can sense, and no more limitations are imposed thereon.

[0010] In a possible implementation manner, the measured electrical values of the induction signals respectively generated by the above-mentioned multiple sensors may be the maximum read electrical values of the induction signals respectively generated by the above-mentioned multiple sensors under rated working conditions. That is to say, the test sensing information may be the sensing information that can make the measured electrical values of the induction signals respectively generated by the multiple sensors reach the maximum read electrical values under rated working conditions.

[0011] By adopting the above technical solution, not only can the influence of the difference in the induction capabilities between multiple sensors on the measured electrical values of the induction signals respectively generated by the multiple sensors be more significantly reflected, but also the saturation of the multiple sensors can be avoided, making the obtained calibration parameter set more credible.

[0012] In a possible implementation manner, the reference electrical value may be the minimum value among the measured electrical values of the induction signals respectively generated by the above-mentioned multiple sensors.

[0013] In this case, the magnitude of each calibration parameter in the obtained calibration parameter set does not exceed 1, so that the calibrated electrical value of the induction signal generated by each sensor obtained will not exceed the read electrical value of the induction signal generated by the sensor. When applying the calibrated electrical values of the induction signals respectively generated by the obtained multiple sensors to imaging, it is beneficial to prevent the problem of saturation in the generated induction image.

[0014] In a possible implementation manner, among the above-mentioned multiple sensors, the read electrical value of the induction signal generated by the i-th sensor is obtained based on the difference between the actual induction electrical value of the induction signal generated by the i-th sensor after sensing the sensing information and the initial electrical value of the i-th sensor when it does not sense the sensing information. The read electrical value of the induction signal generated by each sensor among the above-mentioned multiple sensors can be obtained in the same manner as the read electrical value of the induction signal generated by the i-th sensor.

[0015] It should be noted that the read electrical value of the induction signal generated by the i-th sensor refers to the read electrical value of the induction signal generated by the i-th sensor after sensing the sensing information. In the embodiments of the present application, the read electrical value of the induction signal generated by the i-th sensor can be obtained according to the difference between the actual induced electrical value of the induction signal generated by the i-th sensor after sensing the sensing information and the initial electrical value of the i-th sensor when it does not sense the sensing information. Among them, the actual induced electrical value of the induction signal generated by the i-th sensor after sensing the sensing information can also be simply referred to as the actual induced electrical value of the induction signal generated by the i-th sensor, and can also be understood as the electrical value of the i-th sensor after sensing the sensing information.

[0016] In view of this, the above technical solution can also be expressed as: for each sensor among the multiple sensors, the read electrical value of the induction signal generated by the sensor refers to the value obtained by subtracting the electrical value of the sensor when it does not sense the sensing information from the actual induced electrical value of the induction signal generated by the sensor after sensing the sensing information.

[0017] In a possible implementation manner, the processor is specifically configured to: calculate the calibrated electrical value of the induction signal generated by the i-th sensor according to the product of the calibration parameter corresponding to the i-th sensor and the read electrical value of the induction signal generated by the i-th sensor.

[0018] In a second aspect, the embodiments of the present application provide an electronic device, which includes multiple sensors, a read chip, and the compensation chip provided in any one of the first aspects above. The read chip is respectively coupled to the multiple sensors and the compensation chip; in the electronic device, the multiple sensors can generate induction signals according to the sensing information sensed by each of them; the read chip can read the induction signals generated by the multiple sensors respectively, obtain the read electrical values of the induction signals generated by the multiple sensors respectively, and provide the read electrical values of the induction signals generated by the multiple sensors respectively to the compensation chip; the compensation chip can calibrate the read electrical values of the induction signals generated by the multiple sensors respectively to obtain the calibrated electrical values of the induction signals of each sensor. The specific implementation manner of the compensation chip can refer to the first aspect, and will not be elaborated here.

[0019] In a possible implementation, the electronic device may further include a display screen and N read lines. The display screen includes a sensing array, and the sensing array includes M×N sensors, where both M and N are integers greater than 1. The read chip is coupled to the output terminals of M sensors in the corresponding columns of N columns of sensors through each of the N read lines, and the N read lines are in a one-to-one correspondence with the N columns of sensors. Specifically, the read chip is configured to: after turning on the N sensors in the t-th row, receive the induction signals of the N sensors in the t-th row respectively through the N read lines, where t takes all integers in the interval [1, M].

[0020] In a possible implementation, the display screen may further include a gate driving circuit. The input end of the gate driving circuit is coupled to the read chip, and the output end of the gate driving circuit is coupled to the corresponding row of sensors in M rows of sensors through each of the M gate control lines. The M gate control lines are in a one-to-one correspondence with the M rows of sensors. In this case, the read chip may further send a periodic clock signal to the gate driving circuit. The gate driving circuit may generate M gate driving signals according to the clock signal. The M gate driving signals are in a one-to-one correspondence with the M gate control lines, and each gate driving signal is used to turn on N sensors coupled to the corresponding one of the M gate control lines. After the end of the k-th period of the clock signal, the (k + 1)-th gate driving signal is sent to the (k + 1)-th gate control line to turn on the N sensors in the (k + 1)-th row of sensors, where k is an integer greater than or equal to 1 and less than or equal to M - 1. The above clock signal includes M periods, and the M periods are in a one-to-one correspondence with the M gate control lines. The k-th period corresponds to the k-th gate control line, and the k-th gate driving signal corresponds to the k-th gate control line, where k takes any integer greater than or equal to 1 and less than or equal to M.

[0021] In a possible implementation, the reading chip may also send a clock signal to the compensation chip; the calibration parameter set is a matrix including M×N calibration parameters, and the M rows of calibration parameters in the calibration parameter set are in one-to-one correspondence with the M rows of sensors in the sensing array, and the N columns of calibration parameters in the calibration parameter set are in one-to-one correspondence with the N columns of sensors in the sensing array; specifically, the compensation chip is configured to: receive the read electrical values of the induction signals of the N sensors in the t-th row of sensors respectively, and determine the positions of the N sensors in the t-th row of sensors in the sensing array according to the clock signal and a preset order; wherein, the preset order may indicate the one-to-one correspondence between the M gate driving signals and the M gate control lines; after obtaining the read electrical values of the induction signals generated by the multiple sensors in the sensing array respectively, construct a matrix to be calibrated according to the read electrical values of the induction signals of the multiple sensors respectively and the positions of the multiple sensors in the sensing array; the matrix to be calibrated includes M×N read electrical values, wherein, the M rows of read electrical values in the matrix to be calibrated are in one-to-one correspondence with the M rows of sensors in the sensing array, and the N columns of read electrical values in the matrix to be calibrated are in one-to-one correspondence with the N columns of sensors in the sensing array; calibrate the read electrical values of the induction signals of each sensor in the sensing array according to the orthogonal product of the matrix to be calibrated and the calibration parameter set, and obtain the calibrated electrical values of the induction signals of each sensor.

[0022] In a possible implementation, the electronic device further includes a processing chip, and the processing chip is coupled to the compensation chip; the compensation chip may also send the calibrated electrical values of the induction signals of the multiple sensors to the processing chip; the processing chip may generate an induction image according to the calibrated electrical values of the induction signals of the multiple sensors, and the induction image includes a plurality of pixel points, wherein, the positions of the plurality of pixel points in the induction image are in one-to-one or one-to-many correspondence with the positions of the multiple sensors in the sensing array, and wherein, the pixel value of each pixel point is obtained according to the calibrated electrical values of the induction signals of one or more sensors corresponding to the pixel point.

[0023] In a third aspect, an embodiment of the present application provides a screen adapter board, which includes a flexible circuit board, a reading chip, and a memory; the flexible circuit board carries the reading chip and the memory; the reading chip is coupled to the memory; wherein, the memory can store a calibration parameter set, the calibration parameter set includes a plurality of calibration parameters, and the plurality of calibration parameters are in one-to-one correspondence with a plurality of sensors. Each calibration parameter is used to calibrate the read electrical value of the induction signal generated by the corresponding sensor after sensing the sensing information. Among them, the read electrical values of the induction signals generated by at least two of the plurality of sensors according to the same sensing information are different, and the electrical value includes a current value or a voltage value; the reading chip can read the induction signals generated by the plurality of sensors respectively, obtain the read electrical values of the induction signals generated by the plurality of sensors respectively, read the plurality of calibration parameters from the memory, and use each calibration parameter in the plurality of calibration parameters to calibrate the read electrical value of the induction signal generated by the corresponding sensor, so as to obtain the calibrated electrical value of the induction signal of each sensor. Among them, the calibrated electrical values of the induction signals generated by every two of the plurality of sensors according to the same sensing information are the same.

[0024] In a possible implementation manner, the above calibration parameter set can be obtained by the following method: obtaining the test electrical values of the induction signals generated by the plurality of sensors respectively after sensing the test sensing information; determining the reference electrical value from the test electrical values respectively corresponding to the plurality of sensors; constructing a calibration parameter set according to the reference electrical value, and the plurality of calibration parameters included in the calibration parameter set are in one-to-one correspondence with the plurality of sensors. Each calibration parameter is the ratio between the reference electrical value and the test electrical value corresponding to the sensor corresponding to the calibration parameter.

[0025] In a possible implementation manner, the test electrical values of the induction signals generated by the plurality of sensors respectively are the maximum read electrical values of the induction signals generated by the plurality of sensors under the rated working conditions.

[0026] In a possible implementation manner, the reference electrical value is the minimum value among the test electrical values respectively corresponding to the plurality of sensors.

[0027] In a possible implementation manner, the read electrical value of the induction signal generated by the i-th sensor is obtained based on the difference between the actual induction electrical value when the i-th sensor senses the sensing information and the initial electrical value when the i-th sensor does not sense the sensing information. The obtaining method of the read electrical value of the induction signal generated by each of the plurality of sensors is the same as the obtaining method of the read electrical value of the induction signal generated by the i-th sensor.

[0028] In a possible implementation, the reading chip is specifically configured to: calculate the calibrated electrical value of the induction signal generated by the i-th sensor according to the product of the calibration parameter corresponding to the i-th sensor and the read electrical value of the induction signal generated by the i-th sensor.

[0029] In a fourth aspect, an embodiment of the present application provides an electronic device, including a plurality of sensors, and a screen adapter board provided in any one of the above third aspects; the reading chip is respectively coupled to the plurality of sensors; the plurality of sensors can generate induction signals according to the respective sensing information sensed; the reading chip can read the induction signals respectively generated by the plurality of sensors, obtain the read electrical values of the induction signals respectively generated by the plurality of sensors, read a plurality of calibration parameters from the memory, and use each calibration parameter in the plurality of calibration parameters to calibrate the read electrical value of the induction signal generated by the corresponding sensor, so as to obtain the calibrated electrical value of the induction signal of each sensor.

[0030] In a possible implementation, the electronic device may further include a display screen, the display screen includes a sensing array, the sensing array includes M×N sensors, both M and N are integers greater than 1; the reading chip is coupled to the output ends of M sensors in the corresponding column of the N columns of sensors through each of the N reading lines, and the N reading lines and the N columns of sensors are in a one-to-one correspondence; the reading chip is specifically configured to: after turning on the N sensors in the t-th row, receive the induction signals respectively generated by the N sensors in the t-th row through the N reading lines, where t takes all integers in the interval [1, M].

[0031] In a possible implementation, the display screen further includes a gate driving circuit, the input end of the gate driving circuit is coupled to the reading chip, the output end of the gate driving circuit is coupled to the corresponding row of sensors in the M rows of sensors through each of the M gate control lines, and the M gate control lines and the M rows of sensors are in a one-to-one relationship; the reading chip is further configured to: send a periodic clock signal to the gate driving circuit; the gate driving circuit is configured to: generate M gate driving signals according to the clock signal, the M gate driving signals and the M gate control lines are in a one-to-one correspondence, and each gate driving signal is used to turn on N sensors coupled to the corresponding one of the M gate control lines; then, after the end of the k-th cycle of the clock signal, send the (k + 1)-th gate driving signal to the (k + 1)-th gate control line, for turning on N sensors in the (k + 1)-th row of sensors, where k is an integer greater than or equal to 1 and less than or equal to M - 1, the clock signal includes M cycles, the M cycles and the M gate control lines are in a one-to-one correspondence, and the k-th cycle corresponds to the k-th gate control line, and the k-th gate driving signal corresponds to the k-th gate control line, and k takes any integer greater than or equal to 1 and less than or equal to M.

[0032] In a possible implementation, the calibration parameter set is a matrix including M×N calibration parameters; the M rows of calibration parameters in the calibration parameter set are in one-to-one correspondence with the M rows of sensors in the sensing array, and the N columns of calibration parameters in the calibration parameter set are in one-to-one correspondence with the N columns of sensors in the sensing array; the reading chip is specifically configured to: obtain the read electrical values of the sensing signals of the N sensors in the t-th row of sensors respectively, and determine the positions of the N sensors in the t-th row of sensors in the sensing array according to the clock signal and a preset order; the preset order can indicate the one-to-one correspondence between the M gate drive signals and the M gate control lines; after obtaining the read electrical values of the sensing signals generated by the multiple sensors in the sensing array respectively, construct a matrix to be calibrated according to the read electrical values of the sensing signals of the multiple sensors respectively and the positions of the multiple sensors in the sensing array; the matrix to be calibrated includes M×N read electrical values, wherein the M rows of read electrical values in the matrix to be calibrated are in one-to-one correspondence with the M rows of sensors in the sensing array, and the N columns of read electrical values in the matrix to be calibrated are in one-to-one correspondence with the N columns of sensors in the sensing array; calibrate the read electrical values of the sensing signals of each sensor in the sensing array according to the orthogonal product of the matrix to be calibrated and the calibration parameter set, and obtain the calibrated electrical values of the sensing signals of each sensor.

[0033] In a possible implementation, the electronic device further includes a processing chip, and the processing chip is coupled to the reading chip; the reading chip can also send the calibrated electrical values of the sensing signals of the multiple sensors respectively to the processing chip; the processing chip can generate a sensing image according to the calibrated electrical values of the sensing signals of the multiple sensors respectively, the sensing image includes a plurality of pixel points, and the positions of the plurality of pixel points in the sensing image are in one-to-one or one-to-many correspondence with the positions of the multiple sensors in the sensing array, wherein the pixel value of each pixel point is obtained according to the calibrated electrical values of the sensing signals of one or more sensors corresponding to the pixel point.

[0034] In a fifth aspect, an embodiment of the present application provides a data processing method, including: obtaining a calibration parameter set, the calibration parameter set includes a plurality of calibration parameters, the plurality of calibration parameters are in one-to-one correspondence with a plurality of sensors, and each calibration parameter is used to calibrate the read electrical value of the sensing signal generated by the corresponding sensor, wherein the read electrical values of the sensing signals generated by at least two sensors among the plurality of sensors according to the same sensing information are different, and the electrical value is a voltage value or a current value; calibrating the read electrical value of the sensing signal generated by the corresponding sensor by using each calibration parameter in the plurality of calibration parameters, and obtaining the calibrated electrical value of the sensing signal of each sensor, wherein the calibrated electrical values of the sensing signals generated by any two sensors among the plurality of sensors according to the same sensing information are the same.

[0035] In a possible implementation, the above calibration parameter set can be obtained through the following method: Obtain the test electrical values of the induction signals respectively generated by multiple sensors after sensing the test sensing information; Determine the reference electrical value from the test electrical values respectively corresponding to the multiple sensors; Construct a calibration parameter set according to the reference electrical value. The multiple calibration parameters included in the calibration parameter set are in one-to-one correspondence with the multiple sensors, and each calibration parameter is the ratio between the reference electrical value and the test electrical value corresponding to the sensor corresponding to the calibration parameter.

[0036] In a possible implementation, the test electrical values of the induction signals respectively generated by the multiple sensors are the maximum read electrical values of the induction signals respectively generated by the multiple sensors under rated working conditions.

[0037] In a possible implementation, the reference electrical value is the minimum value among the test electrical values respectively corresponding to the multiple sensors.

[0038] In a possible implementation, the read electrical value of the induction signal generated by the i-th sensor is obtained based on the difference between the actual induction electrical value when the i-th sensor senses the sensing information and the initial electrical value when the i-th sensor does not sense the sensing information. The obtaining method of the read electrical value of the induction signal generated by each sensor among the multiple sensors is the same as the obtaining method of the read electrical value of the induction signal generated by the i-th sensor.

[0039] In a possible implementation, using the calibration parameter corresponding to the first sensor to calibrate the read electrical value of the induction signal generated by the first sensor includes: Calculating the calibrated electrical value of the induction signal generated by the i-th sensor according to the product of the calibration parameter corresponding to the i-th sensor and the read electrical value of the induction signal generated by the i-th sensor.

[0040] These aspects or other aspects of the present application will be more clearly understood in the following description of the embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a schematic structural diagram of an electronic device;

[0042] Figure 2 It is a schematic diagram of the conversion relationship between a clock signal and a gate driving signal;

[0043] Figure 3 It is a schematic structural diagram of a sensing unit;

[0044] Figure 4 It is a schematic flowchart of a method for obtaining a calibration parameter set provided by an embodiment of the present application;

[0045] Figure 5Schematic diagram of a compensation chip structure provided by an embodiment of the present application;

[0046] Figure 6 Schematic diagram of an electronic device structure provided by an embodiment of the present application;

[0047] Figure 7 Schematic diagram of an electronic device structure provided by an embodiment of the present application. Detailed implementation manners

[0048] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application.

[0049] Currently, multiple sensors of the same type are often integrated in an electronic device, where "multiple" means two or more, and can also be expressed as "at least two". These sensors of the same type generally can form a sensing array. Taking a sensing array (optical sensing array) composed of PD sensors as an example, this optical sensing array has a wide range of applications in optical sensing imaging. For example, an optical sensing array is often integrated in an optical camera, and the optical camera can implement an optical imaging function through this optical sensing array. For another example, an optical sensing array is often integrated in a smart phone, and the smart phone can implement an image recognition function through this optical sensing array.

[0050] Taking the sensing array in a smart phone as an example, currently, the sensing array in a smart phone is mostly integrated inside the display screen of the smart phone, that is, the PD in cell structure. For a display screen adopting the PD in cell structure, there is no need to set a sensing array in other spaces inside the smart phone except the display screen, which can reduce the space occupied by the sensing array inside the smart phone, thereby facilitating the purpose of reducing the thickness and manufacturing cost of the smart phone.

[0051] Generally, the sensing array in a smart phone can be used to help implement the under-screen fingerprint recognition function of the smart phone. Figure 1 Exemplarily shows a schematic diagram of an under-screen fingerprint recognition system architecture of an electronic device. The electronic device can be a device such as a smart phone or a tablet computer that supports the under-screen fingerprint recognition function.

[0052] As Figure 1 shown, the electronic device includes a display screen 100, a reading chip 200, and a processing chip 300. The reading chip 200 is respectively coupled to the display screen 100 and the processing chip 300. The reading chip 200 is usually assembled on a screen adapter board. The screen adapter board is mainly composed of a flexible circuit board that can be bent, and is generally used to connect the display screen and the main board of the electronic device inside the electronic device. In addition to the reading chip 200 on the flexible circuit board of the screen adapter board, other circuit modules can also be carried, and the embodiments of the present application will not elaborate on this.

[0053] In an electronic device, the processing chip 300 may be a central processing unit (CPU) located on the main board of the electronic device, or a graphics processing unit (GPU), or a chip on the screen transfer board, etc. The embodiments of the present application do not impose many restrictions on this. The processing chip 300 may control the reading chip 200 to send a clock signal to the gate driver on array (GOA) in the display screen 100.

[0054] As Figure 1 shown, a sensing array is included in the display screen. The sensing array is an M×N matrix B, that is, it includes M×N sensing units. Wherein, M is the number of rows of the sensing array, and N is the number of columns of the sensing array. In addition, the display screen also includes a GOA. The GOA is coupled to the control ends of each sensing unit in the M rows of sensing units through M gate scan lines. For example Figure 1 in, the GOA is coupled to the control ends of the sensing units 11 to 1N through one gate scan line respectively. It should be known that the relationship between the M gate scan lines and the M rows of sensing units is one-to-one. Assume that the i-th gate scan line corresponds to the i-th row of sensing units, where the value of i is any integer in the closed interval [1, M]. Then the i-th gate scan line is coupled to the control end of each of the N sensing units in the i-th row of sensing units.

[0055] After receiving the clock signal sent by the reading chip 200, the GOA may generate M gate driving signals according to the clock signal. It should be noted that the M gate driving signals and the M rows of sensing units are one-to-one. Each driving signal is used to drive the uniquely corresponding row of sensing units. For example, the gate driving signal i is used to drive the i-th row of sensing units, where the value of i is any integer in the closed interval [1, M]. Exemplarily, the transformation between the clock signal and the M gate driving signals may be as Figure 2As shown. Specifically, the clock signal is a periodic signal, and the GOA generates gate driving signals 1 to M according to the clock signal respectively, and each gate driving signal corresponds to one period of the clock signal. The GOA can scan the sensing array according to the clock signal, that is, sequentially turn on each row of sensing units in the sensing array according to a preset order. Or rather, the GOA can send these M gate driving signals to M rows of sensing units respectively to sequentially turn on the sensing units in the first row to the Mth row. Specifically, the GOA can provide the gate driving signal 1 to the first row of sensing units, provide the gate driving signal 2 to the second row of sensing units, and so on. Or rather, the GOA can provide the gate driving signal i to the ith row of sensing units. During the process of scanning the sensing array, the first to Mth row of sensing units can be sequentially turned on through the M gate driving signals.

[0056] As Figure 1 shown, the N columns of sensing units in the sensing array are also respectively coupled to the reading chip 200 through N reading lines. Among them, the N reading lines and the N columns of sensing units are in a one-to-one correspondence, and each reading line is used to be coupled to a uniquely corresponding column of sensing units. Specifically, the jth reading line is used to be coupled to the jth column of sensing units. The value of j is any integer in the closed interval [1, N]. When the GOA sends a gate driving signal to the ith row of sensing units in the sensing array, the ith row of sensing units is turned on, and the reading chip 200 can read the induction signals generated by the N sensing units located in the ith row of sensing units through the N reading lines. It should be known that the jth reading line is used to read the induction signal generated by the sensing unit B ij (or the B ij th sensing unit).

[0057] The reading chip 200 includes an analogue front end (AFE) and an analogue digital converter (ADC). Among them, the AFE can filter and amplify the sensed signals read. The ADC can perform analogue-to-digital conversion on the sensed signals processed by the AFE, that is, convert the sensed signals from analogue signals to digital signals. The digital signals carry the electrical numerical information of the sensed signals when they are read. Among them, the electrical numerical value of the sensed signal when it is read can also be called the read electrical numerical value of the sensed signal. For example, the digital signal sent by the ADC can carry the voltage value of the sensed signal when it is read. Taking the i-th sensor as an example, the read electrical numerical value of the sensed signal generated by the i-th sensor refers to the read electrical numerical value of the sensed signal generated by the i-th sensor after sensing the sensing information. After the reading chip 200 provides the read electrical numerical values of the sensed signals generated by each sensor read to the processing chip 300 through digital signals, the processing chip 300 can process and obtain a sensing image according to the read electrical numerical values of the sensed signals generated by each sensor.

[0058] Specifically, the sensing unit may include a PD sensor and the driving circuit of the PD sensor. Exemplarily, the structure of the sensing unit may be as Figure 3 shown. In the sensing unit, the driving circuit of the PD sensor may include a transistor T1. The anode of the PD sensor is coupled to the ground wire, and the anode is coupled to the first electrode of the transistor T1. The second electrode of the transistor T1 is coupled to the read line, and the control electrode is coupled to the gate control line. When the GOA inputs a gate driving signal through the gate control line, the transistor T1 is turned on. If the PD sensor senses sensing information, such as sensing an optical signal, the PD sensor can generate a sensed signal. The sensed signal generated by the PD sensor is transmitted to the read line through the transistor T1 and can thus be read by the reading chip 200.

[0059] It can be understood that for each sensing unit in the sensing array, the sensed signal generated by the sensing unit, that is, the sensed signal generated by the sensor in the sensing unit. For the sake of convenience in description, the sensed signals generated by the sensing unit and the sensor in the embodiments of the present application are not distinguished much.

[0060] In an electronic device, the TFT layer where the PD sensor is located is usually beneath the OLED layer. When a user performs screen fingerprint recognition, they can press the screen with a finger. The light emitted by the OLED layer will be reflected by the fingerprint on the user's finger and transmitted through the gaps between the pixels in the OLED layer to the TFT layer. After the PD sensor in the TFT layer senses the optical signal, it can generate a sensing signal. During a fingerprint recognition process, the GOA can at least complete one scan of all the sensing units within the sensing array. That is to say, the reading chip 200 can complete at least one reading of the sensing signals respectively generated by each sensor in the sensing array.

[0061] The reading chip 200 provides the read electrical values of the sensing signals respectively generated by multiple sensors to the processing chip 300. The processing chip 300 can generate a fingerprint image of the user based on the read electrical values of the sensing signals respectively generated by multiple sensors and the positions of the multiple sensors in the sensing array. For example, the processing chip 300 can generate a black-and-white fingerprint image. The position of pixel point a in the fingerprint image corresponds to the position of sensor A. If the read voltage value of the sensing signal generated by sensor A is greater than a preset voltage threshold, pixel point a displays black, indicating that sensor A has sensed an optical signal. If the read voltage value of the sensing signal generated by sensor A is not greater than the preset voltage threshold, pixel point a displays white, indicating that the position where sensor A is located has not sensed an optical signal, or in other words, sensor A has not sensed a strong enough optical signal.

[0062] As mentioned above, the PD sensors below the user's pressing position within the display screen can sense the optical signals reflected by the user's fingerprint. Therefore, the pixel points corresponding to the PD sensors below the pressing position can be displayed as black. The PD sensors below the non-pressed positions do not sense the optical signals reflected by the user's fingerprint. Therefore, the pixels corresponding to the PD sensors below the non-pressed positions are displayed as white. The processing chip 300 can determine the display colors of the pixel points corresponding to each PD sensor by comprehensively considering the read electrical values of the sensing signals respectively generated by multiple PD sensors in the sensing array, and thus can generate a fingerprint image. Furthermore, the generated fingerprint image can be compared with a preset fingerprint image to achieve fingerprint recognition.

[0063] However, limited by the manufacturing process of PD sensors, different PD sensors have different light signal sensing capabilities. After sensing light signals of the same intensity, different PD sensors may generate sensing signals with different voltage values. For example, sensor A and sensor B sense light signals of the same intensity, but the electrical value of the sensing signal generated by sensor A read is greater than that of the sensing signal generated by sensor B. As a result, in the fingerprint image generated by the processing chip 300, the pixel point a corresponding to the sensing unit A is displayed as black, and the pixel point b corresponding to the sensing unit B is displayed as white. It can be seen that the difference in the sensing capabilities of PD sensors will lead to insufficient resolution of the fingerprint image generated by the processing chip 300, which is not conducive to improving the accuracy of in-screen fingerprint recognition. Especially for PD sensors integrated inside the display screen, due to the relatively complex manufacturing process, the difference in sensing capabilities between different PD sensors is increased.

[0064] In view of this, the embodiments of the present application provide a technical solution that can make the sensing signals generated by multiple sensors sensing the same sensing information have the same calibrated electrical value, which is beneficial to compensating for the difference in sensing capabilities between multiple sensors. Among them, the electrical value can be a voltage value or a current value, and the present application will not elaborate on this.

[0065] It should be noted that the technical solution provided by the embodiments of the present application is not only applicable to PD sensors, but also applicable to other types of sensors, such as capacitive sensors, piezoelectric ceramic sensors, and so on. Next, taking PD sensors as an example, the technical solution provided by the embodiments of the present application will be further introduced.

[0066] Embodiment 1

[0067] In the embodiment of the present application, a calibration parameter set is preset in the electronic device. The calibration parameter set is an M×N matrix K, that is, the calibration parameter set includes M×N calibration parameters. M is the number of rows of the matrix K, N is the number of columns of the matrix K, and both M and N are integers greater than 1. Among them, the M×N calibration parameters correspond one-to-one to the M×N PD sensors located in the aforementioned sensing array. For example, the K ij th calibration parameter (or calibration parameter K ij ) corresponds to the B ij th PD sensor (or PD sensor B ij ). Using the calibration parameters in the calibration parameter set to calibrate the electrical values of the sensing signals generated by multiple sensors can compensate for the influence of the difference in sensing capabilities between PD sensors on the sensing signals.

[0068] Exemplarily, during the manufacturing process of the electronic device, the calibration parameter set can be obtained through the Figure 4 shown method:

[0069] S401: Obtain the test electrical values of the induction signals respectively generated by multiple sensors under test sensing information.

[0070] In the embodiments of the present application, the test sensing information may be any sensing information that can cause multiple sensors to generate induction signals. In a possible implementation manner, the test electrical values of the induction signals respectively generated by multiple sensors after sensing the test sensing information may be the maximum read electrical values of the induction signals respectively generated by the above multiple sensors under rated operating conditions. It can also be understood that the test sensing information may be the sensing information that makes the test electrical values of the induction signals of multiple sensors reach the maximum read electrical values under rated operating conditions.

[0071] It should be noted that in the embodiments of the present application, the test electrical value of the induction signal generated by the sensor refers to the test electrical value of the induction signal generated by the sensor after sensing the test sensing information, and this will not be elaborated here.

[0072] Taking a PD sensor as an example, the sensing information that the PD sensor can sense is an optical signal. As the intensity of the optical signal irradiated on the PD sensor increases, the electrical value of the induction signal generated by the PD sensor also increases. It should be known that the parameter for measuring the strength of the optical signal is irradiance, and the so-called irradiance refers to the power per unit area when electromagnetic radiation is incident on a curved surface. Assuming that the rated irradiance of the PD sensor is 0 - 20 w / cm 2 , then the test sensing information may be an optical signal with an intensity of 20 w / cm 2 .

[0073] It can be understood that as the intensity of the optical signal increases, the voltage value of the induction signal generated by the PD sensor will also gradually increase, and the influence of the difference in the induction ability of the PD sensor on the voltage value of the induction signal will become more obvious. During the use of the electronic device, the intensity of the optical signal received by the PD sensor generally does not exceed 20 w / cm 2 , so irradiating each PD sensor with an optical signal of 20 w / cm 2 to cause each PD sensor to generate an induction signal respectively, obtaining the test electrical values of each induction signal, and using the test electrical values of the induction signals generated by each sensor to obtain a calibration parameter set can not only more obviously reflect the influence of the difference in the induction ability of the PD sensor on the voltage value of the induction signal, but also avoid the saturation of the PD sensor, that is, the voltage value of the induction signal generated by the PD sensor can no longer increase with the increase of the optical signal intensity. Therefore, the calibration effect of the obtained calibration parameter set can be improved.

[0074] It should be known that the so-called "using an optical signal of 20 w / cm2 irradiate each PD sensor with an optical signal, so that each PD sensor generates an induced signal respectively, obtain the test electrical values of each induced signal, and obtain a calibration parameter set by using the test electrical values of the induced signals generated by each sensor”. It can be understood that an optical signal of 20 w / cm 2 irradiates the PD sensors in the sensing array, so that multiple PD sensors in the sensing array each generate an induced signal, obtain the electrical values of the induced signals generated by the multiple PD sensors respectively, and obtain a calibration parameter set according to the electrical values of the induced signals generated by the multiple PD sensors respectively in the following S402 and S403.

[0075] Taking the read electrical value of the induced signal generated by the PD sensor as the read voltage value as an example, usually the read chip 200 can read the voltage values of the induced signals generated by each PD sensor. It should be known that the read voltage value of the induced signal generated by the B ij th PD sensor can reflect the intensity of the induced signal generated by the B ij th PD sensor after sensing the sensing information, or can reflect the intensity of the sensing information sensed by the B ij th PD sensor, or can reflect the intensity of the sensing information itself, or can reflect the change in the voltage value of the Bijth PD sensor before and after sensing the sensing information.

[0076] Furthermore, the change in the read voltage value of the induced signal generated by the B ij th PD sensor can reflect the change in the intensity of the sensing information sensed by the B ij th PD sensor. Specifically, assume that in the absence of an optical signal, the voltage value of the induced signal generated by the PD sensor is V0, and under an optical signal of 10 w / cm 2 , the voltage value of the induced signal generated by the PD sensor is V1. That is, when the irradiance of the optical signal changes from 0 to 10 w / cm 2 , the change amount of the voltage value of the induced signal generated by the PD sensor is V1 - V0. It should be noted that when the irradiance of the optical signal is 10 w / cm 2 , the read voltage value of the induced signal generated by the PD sensor read by the read chip 200 is V1 - V0.

[0077] For the convenience of expression and distinction, in the present application, the voltage value of the induced signal generated by the PD sensor after sensing the sensing information (such as an optical signal of 10W) can be referred to as the actual induced voltage value of the PD sensor after sensing the sensing information. In addition, the voltage value of the PD sensor read by the read chip 200 after sensing the sensing information (such as 10 w / cm2 The voltage value generated by the optical signal) is referred to as the read voltage value of the PD sensor after sensing the sensing information.

[0078] It can be easily seen that the read voltage value of the PD sensor after sensing the sensing information is the value obtained by subtracting the voltage value of the sensing signal generated by the PD sensor in the absence of an optical signal from the actual sensed voltage value of the PD sensor after sensing the sensing information. Assuming that the value obtained by subtracting the voltage value of the sensing signal generated by the PD sensor in the absence of an optical signal from the actual sensed voltage value of the PD sensor after sensing the sensing information is also referred to as the difference value, for multiple PD sensors, since this difference value can eliminate the voltage difference between each PD sensor in the absence of an optical signal, the voltage value of the sensed signal read can be made more accurate.

[0079] It should be known that since the voltage value is a specific example of an electrical value, this electrical value can also be other parameter values. Accordingly, the electrical value of the sensing signal generated by the sensor after sensing the sensing information (for example, an optical signal of 10w / cm 2 can also be referred to as the actual sensed electrical value of the sensing signal generated by the sensor after sensing the sensing information, or simply referred to as the actual sensed electrical value of the sensing signal generated by the sensor. In addition, the electrical value read by the reading chip 200 of the sensor after sensing the sensing information (for example, an optical signal of 10w / cm 2 can also be referred to as the read electrical value of the sensor after sensing the sensing information. Among them, the read electrical value of the sensor after sensing the sensing information is determined according to the actual sensed electrical value of the sensor after sensing the sensing information.

[0080] It should be noted that the voltage value of the sensing signal generated by the PD sensor in the absence of an optical signal can also be referred to as the initial voltage value of the sensing signal generated by the PD sensor when no sensing information is sensed, or can also be referred to as the initial voltage value of the sensing signal generated by the PD sensor when the sensing information is 0, or the initial voltage value generated when the sensing signal of the PD sensor is 0.

[0081] In view of this, in the embodiment of the present application, the initial voltage value of the Bth ij sensor when no sensing information is sensed can be read first through the reading chip 200, and then the actual sensed voltage value of the ijth sensor after sensing the test sensing information can be read through the reading chip 200. By subtracting the voltage value of the Bth ij sensor when no sensing information is sensed from the actual voltage value of the Bth ij sensor after sensing the test sensing information, the obtained value is the Bthij The read voltage value of each sensor after sensing the test sensing information. It should be noted that for each sensor located in the aforementioned sensing array, the read voltage value of each sensor read by the read chip 200 after sensing the test sensing information conforms to the above limitation. Or rather, the read voltage value of each sensor located in the aforementioned sensing array after sensing the test sensing information conforms to the aforementioned relevant regulations regarding the B ij th sensor.

[0082] Taking Figure 1 the PD sensor in the electronic device shown as an example, in the case of no light signal, the matrix D shown in Formula 1 below can be read through the read chip 200. Among them, each row element in the matrix D corresponds to each row sensor in the aforementioned sensing array respectively, and each column element in the matrix D corresponds to each column sensor in the aforementioned sensing array respectively. In other words, the matrix D includes M rows and N columns, that is, the matrix D is also an M×N matrix. It should be noted that the element D ij in the matrix D is used to represent the initial voltage value of the sensing signal generated by the B ij th PD sensor in the sensing array in the case of no light signal. Accordingly, it is easy to understand that D 11 is used to represent the initial voltage value of the sensing signal generated by the B 11 th PD sensor in the case of no light signal, D 12 is used to represent the initial voltage value of the sensing signal generated by the B 12 th PD sensor in the case of no light signal, and the others are similar and will not be elaborated here.

[0083]

[0084] Taking the test sensing information as a 20w / cm 2 light signal as an example, the matrix P shown in Formula 2 below can be read through the read chip 200. The matrix P is also an M×N matrix. Among them, each row element in the matrix P corresponds to each row sensor in the aforementioned sensing array respectively, and each column element in the matrix P corresponds to each column sensor in the aforementioned sensing array respectively. It should be noted that the element P ij in the matrix P is used to represent the actual sensing voltage value of the B ij th PD sensor in the sensing array when the light signal is 20w / cm 2 . Accordingly, it is easy to understand that P 11 is used to represent the actual sensing voltage value of the B 11 th PD sensor when the light signal is 20w / cm 2 , P 12 is used to represent the actual sensing voltage value of the B 12The actual induced voltage value of a PD sensor when receiving an optical signal of 20w / cm 2 is not elaborated further for other similar cases.

[0085]

[0086] By calculating the difference between the two matrices shown in Formula 1 and Formula 2, a matrix S as shown in Formula 3 below can be obtained. Here, matrix S is also an M×N matrix. Each row element in matrix S corresponds to each row of sensors in the sensing array, and each column element in matrix S corresponds to each column of sensors in the sensing array. It should be noted that the element S ij in matrix S is used to represent the read voltage value of the ij B 2 th PD sensor in the sensing array when receiving an optical signal of 20w / cm ij . It is also the measured electrical value of the induced signal generated by the ij B ij th PD sensor. Combining the foregoing description, it is easy to know that S ij is the result obtained by subtracting D

[0087] from P 11 . Accordingly, it is easy to understand that S 11 is used to represent the read voltage value of the 2 B 11 th PD sensor when receiving an optical signal of 20w / cm 11 , and S 11 =P 12 -D 12 . Similarly, S 2 is used to represent the read voltage value of the 12 B 12 th PD sensor when receiving an optical signal of 20w / cm 12 , and S

[0088]

[0089] S402: Determine the reference electrical value from the measured electrical values corresponding to multiple sensors respectively.

[0090] In the embodiments of the present application, the reference electrical value can be any one of the measured electrical values corresponding to multiple sensors respectively, or the average value of the measured electrical values corresponding to multiple sensors respectively, etc. The embodiments of the present application do not impose many restrictions on this. It should be noted that the measured electrical value corresponding to each sensor can be, for example, the read voltage value of the sensor after sensing the test sensing information.

[0091] S403: Construct a calibration parameter set according to the reference electrical value. The calibration parameter set includes multiple calibration parameters, and the multiple calibration parameters correspond to multiple sensors one by one. Each calibration parameter is the ratio between the reference electrical value and the measured electrical value corresponding to the corresponding sensor.

[0092] Taking the reference electrical value as the minimum value among the measured electrical values respectively corresponding to the multiple sensors as an example for illustration. Based on the matrix shown in Formula 3, assuming that S 11 is the minimum value in matrix S, then S 11 can be used as the reference electrical value. In this case, the calibration parameter set shown in the following Formula 4, that is, matrix A, can be obtained. Among them, matrix A includes M rows and N columns. Each row element in matrix A corresponds to each row of sensors in the aforementioned sensing array respectively, and each column element in matrix A corresponds to each column of sensors in the aforementioned sensing array respectively. Further, the element A ij of matrix A corresponds to the B ij th PD sensor in the aforementioned sensing array. Specifically, A 11 can be used to represent the calibration parameter corresponding to the B 11 th PD sensor. Therefore, A 11 = S 11 / S 11 . Similarly, A 12 can be used to represent the calibration parameter corresponding to the B 12 th PD sensor. Therefore, A 12 = S 11 / S 12 .

[0093]

[0094] By using the above method, the magnitude of each calibration parameter in the obtained calibration parameter set does not exceed 1, so that after calibrating the measured electrical values respectively generated by the M×N sensors in the aforementioned sensing array with the M×N calibration parameters in Formula 4, the calibrated electrical value of the induced signal generated by any sensor will not exceed the measured electrical value of the induced signal generated by this sensor. When using the calibrated electrical values of the induced signals respectively generated by the multiple sensors to generate an induced image, using the above method is beneficial to preventing the problem of saturation in the generated induced image.

[0095] Embodiment 2

[0096] Based on the calibration parameter set provided in Embodiment 1, the embodiment of the present application further provides a compensation chip, and this compensation chip can be assembled on the screen adapter board of an electronic device. As Figure 5As shown, the compensation chip 400 includes a processor 401 and a memory 402. Among them, the memory 402 can be a flash memory or a read only memory (ROM), and the above calibration parameter set is stored in the memory 402.

[0097] The processor 401 is coupled to the reading chip 200, and can receive the electrical value of the induction signal generated by any sensor (such as sensor A) read by the reading chip 200, read the calibration parameter corresponding to sensor A from the memory 402, and then use the calibration parameter corresponding to sensor A to calibrate the electrical value of the induction signal generated by sensor A.

[0098] When applied to Figure 1 the electronic device shown, the reading chip 200 can respectively provide the read electrical values of the induction signals generated by any row of sensors to the processor 401. Specifically, the reading chip 200 reads the induction signals generated by sensors B 11 to B 1N respectively, and provides the read voltage values of the induction signals generated by sensors B 11 to B 1N respectively to the processor 401. The processor 401 can read the calibration parameters corresponding to sensors B 11 to B 1N from the memory 402 respectively, and use the calibration parameters corresponding to each sensor among sensors B 11 to B 1N to calibrate the read voltage values of the induction signals generated by the corresponding sensors. For example, it can be to use the calibration parameter corresponding to PD sensor B 11 to calibrate the read voltage value of the induction signal generated by PD sensor B 11 and use the calibration parameter corresponding to PD sensor B 1N to calibrate the read voltage value of the induction signal generated by PD sensor B 1N respectively.

[0099] In a possible implementation, the reading chip 200 can also send the clock signal provided to the GOA to the processor 401. After receiving the electrical values of the induction signals respectively generated by N sensors in the same row read by the reading chip 200, the processor 401 can determine which row the N sensors are located in the sensing array according to the clock signal and the preset order.

[0100] Specifically, in one scanning process, the GOA can obtain M gate driving signals according to the clock signal, such as Figure 2As shown. Among them, the M gate driving signals and the M gate control lines are in one-to-one correspondence, and each gate driving signal is used to turn on N sensors coupled to a corresponding one of the M gate control lines. Exemplarily, such as Figure 2 in the gate driving signal 1 corresponds to the first gate control line, the gate driving signal 2 corresponds to the second gate control line, and so on, which will not be elaborated here. Another example is that the gate driving signal M corresponds to the first gate control line, the gate driving signal M-1 corresponds to the second gate control line, and so on, which will not be elaborated here.

[0101] It can be seen that there are various possible implementation manners for the correspondence between the gate driving signal and the gate control line, and the embodiments of the present application do not limit this much.

[0102] After the k-th cycle of the clock signal ends, the GOA sends the (k + 1)-th gate driving signal to the (k + 1)-th gate control line, which is used to turn on N sensors in the sensors of the (k + 1)-th row. k is an integer greater than or equal to 1 and less than or equal to M-1. The clock signal includes M cycles, and the M cycles and the M gate control lines are in one-to-one correspondence, and the k-th cycle corresponds to the k-th gate control line, and the k-th gate driving signal corresponds to the k-th gate control line, where k takes any integer greater than or equal to 1 and less than or equal to M. k can take all integers within the interval [1, M]. It should be noted that the above k-th gate control line is any one of the M gate control lines, and the (k + 1)-th gate control line is any one of the M gate control lines other than the k-th gate control line.

[0103] In this case, the processor 401 can obtain the read electrical values of the sensing signals generated by each sensor row by row. Specifically, after the processor 401 obtains the read electrical values of the sensing signals generated by N sensors in a row of sensors, it can determine the positions of the above N sensors in the sensing array according to the clock signal and the preset order. Among them, the preset order can indicate the correspondence between the gate driving signal and the gate control line. For example, after the processor 401 receives the read electrical values of the sensing signals generated by N sensors, according to the clock signal, it determines that the currently sent gate driving signal by the GOA is the gate driving signal L, that is, these N sensors should be turned on by the gate driving signal L. According to the preset order, it is determined that the gate driving signal L corresponds to the sensors in the K-th row, and then it can be determined that these N sensors are N sensors in the sensors of the K-th row of the sensing array.

[0104] After completing a scan of the sensing array, the processor 401 can obtain the matrix V to be calibrated as shown in Equation Five below. It should be noted that the matrix V to be calibrated is an M×N matrix. Among them, each row element in the matrix V corresponds to each row of sensors in the sensing array, and each column element in the matrix V corresponds to each column of sensors in the sensing array. Among them, the element V ij is used to represent the electrical value read of the induced signal generated by the B ij th sensor after sensing the sensing information. For example, the element V 11 can be used to represent the electrical value read of the induced signal generated by the B 11 th sensor after sensing the scan signal. The element V 12 can be used to represent the electrical value read of the induced signal generated by the B 12 th sensor after sensing the scan signal.

[0105]

[0106] It can be understood that among the electrical values read of the induced signals generated by multiple sensors respectively obtained in one scan, there may be some electrical values read that are too small. For example, when the PD sensor does not sense the optical signal, the electrical value read of the induced signal generated is 0. In this case, in the matrix V, the electrical values corresponding to the sensors that do not generate induced signals or whose electrical values read of the induced signals are too small (less than the preset threshold) can be set to 0.

[0107] Furthermore, the processor 401 reads the calibration parameter set A from the memory 402, and calibrates the electrical values of the induced signals generated by each sensor in the sensing array according to the orthogonal product of the matrix V to be calibrated and the calibration parameter set A, to obtain a matrix W. The matrix W is also an M×N matrix. Among them, the element W ij in the matrix W is used to represent the calibrated electrical value of the induced signal generated by the B ij th sensor. Among them, the calibrated electrical value of the induced signal generated by the B ij th sensor refers to the value obtained after calibrating the electrical value of the induced signal generated by the B ij th sensor. The calculation formula can be as shown in Equation Six below.

[0108] W ij = A ij × V ij (Equation Six)

[0109] Among them, A ij is the calibration parameter corresponding to the B ij th sensor in the calibration parameter set A, and Vij is the electrical value read from the induction signal generated by the B-th ij sensor.

[0110] The following matrix W is a matrix composed of the calibrated electrical values of the induction signals generated by each of the M×N sensors located in the sensing array, as shown in the following formula seven:

[0111]

[0112] For example, the element W 11 can be used to represent the calibrated electrical value of the induction signal generated by the B-th 11 sensor. The element W 12 can be used to represent the calibrated electrical value of the induction signal generated by the B-th 12 sensor.

[0113] As Figure 5 shown, the compensation chip 400 can also be coupled to the processing chip 300. The compensation chip 400 can send the calibrated electrical values of the induction signals generated by each sensor shown in formula five to the processing chip 300. The processing chip 300 generates an induction image based on the calibrated electrical values of the induction signals generated by each sensor provided by the compensation chip 400. Among them, the induction image includes a plurality of pixel points. The positions of the plurality of pixel points in the induction image are one-to-one or one-to-many with the positions of the plurality of sensors in the sensing array. The pixel value of each pixel point is obtained according to the calibrated electrical values of the induction signals generated by one or more sensors corresponding to the pixel point. Specifically, when a pixel point corresponds to one sensor, the resolution of the obtained induction image is relatively high. When a pixel point corresponds to multiple sensors, such as a pixel point corresponding to a 2×2 sensor set in the sensing array, the amount of data for calculation can be reduced and the imaging speed can be increased. The specific implementation process of the processing chip 300 for generating the induction image can refer to the prior art, and this application embodiment will not elaborate on it.

[0114] It should be noted that in the embodiment of this application, the processor 401 can be integrated into the electronic device together with the memory 402 as a part of the compensation chip 400, or can be integrated into other existing chips as an extended functional circuit.

[0115] Specifically, as Figure 6 shown, the embodiment of this application also provides a screen adapter board, which carries the reading chip 200 and the memory 402, and the processor 401 is integrated inside the reading chip 200. As Figure 6As shown, the reading chip 200 includes an AFE 201, an ADC 202, and a processor 401. Among them, the specific implementation of the AMF 201 and the ADC 202 can refer to existing solutions, which will not be elaborated here. The processor 401 is coupled to the ADC 202, and the processor 401 can receive the read electrical values of the induction signals generated by each sensor provided by the ADC 202. As Figure 6 shown, the processor 401 is also coupled to the memory 402 located on the screen adapter board, and can obtain the calibration parameters corresponding to each sensor from the memory 402, so that the processor 401 can calibrate the read electrical values of the induction signals generated by each sensor provided by the ADC. In this case, the reading chip 200 in the electronic device can calibrate the induction signals generated by multiple PD sensors respectively.

[0116] Optionally, as Figure 7 shown, the processor 401 can also be integrated into the processing chip 300. The processing chip 300 includes a processor 401 and a kernel. Among them, the processor 401 can be coupled to the memory 402. The read electrical values of the induction signals generated by each sensor received by the processing chip 300 from the reading chip 200 need to be calibrated by the processor 401 first to obtain the calibrated electrical values of the induction signals generated by each sensor. Then, the kernel generates an induction image based on the calibrated electrical values of the induction signals generated by each sensor. The specific implementation of the kernel can refer to the prior art, which will not be elaborated here.

[0117] In addition, the memory 402 can be either a memory integrated with the processor 401 on the same chip and dedicated to storing the calibration parameter set, or a memory located on the screen adapter board or the main board of the electronic device. In addition to storing the calibration parameter set, the memory 402 can also store other data, which is not limited in this embodiment of the present application.

[0118] All of the above implementation manners can refer to the technical solutions provided in the second embodiment of the present application, which will not be elaborated here.

[0119] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application also intends to include these changes and modifications.

Claims

1. A compensation chip, characterized in that, it includes a processor and a memory that are mutually coupled; the memory is used to store a set of calibration parameters, the set of calibration parameters includes a plurality of calibration parameters, the plurality of calibration parameters are in one-to-one correspondence with a plurality of sensors, and each calibration parameter is used to calibrate the read electrical value of the induction signal generated by the corresponding sensor after sensing sensing information, wherein, at least two of the plurality of sensors generate different read electrical values of the induction signals according to the same sensing information, and the electrical value is a voltage value or a current value; the processor is used to read the plurality of calibration parameters from the memory, and use each calibration parameter in the plurality of calibration parameters to calibrate the read electrical value of the induction signal generated by the corresponding sensor, so as to obtain the calibrated electrical value of the induction signal generated by each sensor, wherein, the calibrated electrical values of the induction signals generated by every two of the plurality of sensors according to the same sensing information are the same.

2. The compensation chip according to claim 1, characterized in that, the set of calibration parameters is obtained by the following method: acquire the test electrical values of the induction signals generated by the plurality of sensors respectively after sensing test sensing information; determine a reference electrical value from the test electrical values of the induction signals generated by the plurality of sensors respectively; construct the set of calibration parameters according to the reference electrical value, the set of calibration parameters includes a plurality of calibration parameters, and the plurality of calibration parameters are in one-to-one correspondence with the plurality of sensors, and each calibration parameter is the ratio between the reference electrical value and the test electrical value of the induction signal generated by the sensor corresponding to the calibration parameter.

3. The compensation chip according to claim 2, characterized in that, the test electrical values of the induction signals generated by the plurality of sensors respectively are the maximum read electrical values of the induction signals generated by the plurality of sensors under rated working conditions.

4. The compensation chip according to claim 2 or 3, characterized in that, the reference electrical value is the minimum value among the test electrical values of the induction signals generated by the plurality of sensors respectively.

5. The compensation chip according to claim 1, characterized in that, the read electrical value of the induction signal generated by the i-th sensor is obtained according to the difference between the actual induction electrical value of the induction signal generated by the i-th sensor after sensing the sensing information and the initial electrical value when the i-th sensor does not sense the sensing information, and the acquisition method of the read electrical value of the induction signal generated by each sensor in the plurality of sensors is the same as the acquisition method of the read electrical value of the induction signal generated by the i-th sensor.

6. The compensation chip according to claim 5, characterized in that, the processor is specifically used for: calculating the calibrated electrical value of the induction signal generated by the i-th sensor according to the product of the calibration parameter corresponding to the i-th sensor and the read electrical value of the induction signal generated by the i-th sensor.

7. An electronic device, characterized in that, Comprising a plurality of sensors, a reading chip, and a compensation chip as described in any one of claims 1 to 6, the reading chip being respectively coupled to the plurality of sensors and the compensation chip; The plurality of sensors are configured to generate induction signals according to the respective sensed sensing information; The reading chip is configured to read the induction signals respectively generated by the plurality of sensors, obtain the read electrical values of the induction signals respectively generated by the plurality of sensors, and provide the read electrical values of the induction signals respectively generated by the plurality of sensors to the compensation chip; The compensation chip is configured to calibrate the read electrical values of the induction signals respectively generated by the plurality of sensors to obtain the calibrated electrical values of the induction signals of each sensor.

8. The electronic device according to claim 7, wherein, The electronic device further includes a display screen and N reading lines, the display screen includes a sensing array, the sensing array includes M×N sensors, and both M and N are integers greater than 1; The reading chip is coupled to the output ends of M sensors respectively located in the corresponding columns of N columns of sensors through each of the N reading lines, and the N reading lines and the N columns of sensors are in a one-to-one correspondence; The reading chip is specifically configured to: After turning on the N sensors located in the t-th row, receive the induction signals respectively generated by the N sensors located in the t-th row through the N reading lines, where t takes all integers within the interval [1, M].

9. The electronic device according to claim 8, wherein, The display screen further includes a gate driving circuit, the input end of the gate driving circuit is coupled to the reading chip, the output end of the gate driving circuit is coupled to the corresponding row of sensors among the M rows of sensors through each of the M gate control lines, and the M gate control lines and the M rows of sensors are in a one-to-one relationship; The reading chip is further configured to: send a periodic clock signal to the gate driving circuit; The gate driving circuit is configured to: Generate M gate driving signals according to the clock signal, the M gate driving signals and the M gate control lines are in a one-to-one correspondence, and each gate driving signal is used to turn on the N sensors coupled to the corresponding one of the gate control lines; Then, after the end of the k-th cycle of the clock signal, send the (k + 1)-th gate driving signal to the (k + 1)-th gate control line to turn on the N sensors located in the (k + 1)-th row of sensors, where k is an integer greater than or equal to 1 and less than or equal to M - 1, the clock signal includes M cycles, the M cycles and the M gate control lines are in a one-to-one correspondence, wherein the k-th cycle corresponds to the k-th gate control line, and the k-th gate driving signal corresponds to the k-th gate control line, and k takes any integer greater than or equal to 1 and less than or equal to M.

10. The electronic device according to claim 9, wherein, The reading chip is further configured to: send the clock signal to the compensation chip; The calibration parameter set is a matrix including M×N calibration parameters. The M rows of calibration parameters in the calibration parameter set are in one-to-one correspondence with the M rows of sensors in the sensing array, and the N columns of calibration parameters in the calibration parameter set are in one-to-one correspondence with the N columns of sensors in the sensing array; The compensation chip is specifically configured to: receive the read electrical values of the sensing signals of the N sensors in the t-th row of sensors respectively, and determine the positions of the N sensors in the t-th row of sensors in the sensing array according to the clock signal and a preset order; the preset order is used to indicate the one-to-one correspondence between the M gate driving signals and the M gate control lines; after obtaining the read electrical values of the sensing signals generated by the multiple sensors in the sensing array respectively, construct a matrix to be calibrated according to the read electrical values of the sensing signals of the multiple sensors respectively and the positions of the multiple sensors in the sensing array; The matrix to be calibrated includes M×N read electrical values. Among them, the M rows of read electrical values in the matrix to be calibrated are in one-to-one correspondence with the M rows of sensors in the sensing array, and the N columns of read electrical values in the matrix to be calibrated are in one-to-one correspondence with the N columns of sensors in the sensing array; Calibrate the read electrical values of the sensing signals of each sensor in the sensing array according to the orthogonal product of the matrix to be calibrated and the calibration parameter set, and obtain the calibrated electrical values of the sensing signals of each sensor.

11. The electronic device according to any one of claims 7 to 10, characterized in that the electronic device further includes a processing chip, and the processing chip is coupled to the compensation chip; the compensation chip is further configured to: send the calibrated electrical values of the sensing signals of the multiple sensors respectively to the processing chip; the processing chip is configured to: generate a sensing image according to the calibrated electrical values of the sensing signals of the multiple sensors respectively. The sensing image includes multiple pixel points, and the positions of the multiple pixel points in the sensing image are in one-to-one or one-to-many correspondence with the positions of the multiple sensors in the sensing array. Among them, the pixel value of each pixel point is obtained according to the calibrated electrical values of the sensing signals of one or more sensors corresponding to the pixel point.

12. A screen adapter board, characterized in that it includes a flexible circuit board, a reading chip and a memory; the flexible circuit board carries the reading chip and the memory; the reading chip is coupled to the memory; the memory is configured to store a calibration parameter set, the calibration parameter set includes multiple calibration parameters, the multiple calibration parameters are in one-to-one correspondence with multiple sensors, and each calibration parameter is used to calibrate the read electrical value of the sensing signal generated by the corresponding sensor after sensing the sensing information. Among them, the read electrical values of the sensing signals generated by at least two of the multiple sensors according to the same sensing information are different, and the electrical value includes a current value or a voltage value; The reading chip is configured to read the induction signals respectively generated by the multiple sensors, obtain the read electrical values of the induction signals respectively generated by the multiple sensors, read the multiple calibration parameters from the memory, and calibrate the read electrical values of the induction signals generated by the corresponding sensors by using each calibration parameter in the multiple calibration parameters, so as to obtain the calibrated electrical values of the induction signals of each sensor, wherein the calibrated electrical values of the induction signals respectively generated by any two sensors among the multiple sensors according to the same sensing information are the same.

13. The screen adapter board according to claim 12, wherein, the calibration parameter set is obtained by the following method: obtaining the test electrical values of the induction signals respectively generated by the multiple sensors after sensing the test sensing information; determining a reference electrical value from the test electrical values respectively corresponding to the multiple sensors; constructing the calibration parameter set according to the reference electrical value, wherein the multiple calibration parameters included in the calibration parameter set are in one-to-one correspondence with the multiple sensors, and each calibration parameter is the ratio between the reference electrical value and the test electrical value corresponding to the sensor corresponding to the calibration parameter.

14. The screen adapter board according to claim 13, wherein, the test electrical values of the induction signals respectively generated by the multiple sensors are the maximum read electrical values of the induction signals respectively generated by the multiple sensors under rated working conditions.

15. The screen adapter board according to claim 13 or 14, wherein, the reference electrical value is the minimum value among the test electrical values respectively corresponding to the multiple sensors.

16. The screen adapter board according to claim 12, wherein, the read electrical value of the induction signal generated by the i-th sensor is obtained according to the difference between the actual induction electrical value when the i-th sensor senses the sensing information and the initial electrical value when the i-th sensor does not sense the sensing information, and the obtaining manner of the read electrical value of the induction signal generated by each sensor among the multiple sensors is the same as that of the read electrical value of the induction signal generated by the i-th sensor.

17. The screen adapter board according to claim 16, wherein, the reading chip is specifically configured to: calculate the calibrated electrical value of the induction signal generated by the i-th sensor according to the product of the calibration parameter corresponding to the i-th sensor and the read electrical value of the induction signal generated by the i-th sensor.

18. An electronic device, wherein, comprising multiple sensors and a screen adapter board according to any one of claims 12 to 17; the reading chip is respectively coupled to the multiple sensors; the multiple sensors are configured to generate induction signals according to the respective sensing information sensed; The reading chip is configured to read the induction signals generated by the multiple sensors respectively, obtain the read electrical values of the induction signals generated by the multiple sensors respectively, read the multiple calibration parameters from the memory, and calibrate the read electrical values of the induction signals generated by the corresponding sensors by using each calibration parameter in the multiple calibration parameters, so as to obtain the calibrated electrical values of the induction signals of each sensor.

19. The electronic device according to claim 18, wherein, the electronic device further includes a display screen, the display screen includes a sensing array, the sensing array includes M×N sensors, and both M and N are integers greater than 1; the reading chip is coupled to the output ends of M sensors in the corresponding columns of the N columns of sensors respectively through each of the N reading lines, and the N reading lines and the N columns of sensors are in a one-to-one correspondence; the reading chip is specifically configured to: after turning on the N sensors in the t-th row, receive the induction signals generated by the N sensors in the t-th row respectively through the N reading lines, where t takes all integers within the interval [1, M].

20. The electronic device according to claim 19, wherein, the display screen further includes a gate driving circuit, the input end of the gate driving circuit is coupled to the reading chip, the output end of the gate driving circuit is coupled to the corresponding row of sensors in the M rows of sensors through each of the M gate control lines, and the M gate control lines and the M rows of sensors are in a one-to-one relationship; the reading chip is further configured to: send a periodic clock signal to the gate driving circuit; the gate driving circuit is configured to: generate M gate driving signals according to the clock signal, the M gate driving signals and the M gate control lines are in a one-to-one correspondence, and each gate driving signal is used to turn on the N sensors coupled to the corresponding one of the M gate control lines; then, after the k-th cycle of the clock signal ends, send the (k + 1)-th gate driving signal to the (k + 1)-th gate control line to turn on the N sensors in the (k + 1)-th row of sensors, where k is an integer greater than or equal to 1 and less than or equal to M - 1, the clock signal includes M cycles, the M cycles and the M gate control lines are in a one-to-one correspondence, the k-th cycle corresponds to the k-th gate control line, and the k-th gate driving signal corresponds to the k-th gate control line, and k takes any integer greater than or equal to 1 and less than or equal to M.

21. The electronic device according to claim 20, wherein, the calibration parameter set is a matrix including M×N calibration parameters; the M rows of calibration parameters in the calibration parameter set and the M rows of sensors in the sensing array are in a one-to-one correspondence, and the N columns of calibration parameters in the calibration parameter set and the N columns of sensors in the sensing array are in a one-to-one correspondence; the reading chip is specifically configured to: Obtain the read electrical values of the sensing signals of each of the N sensors in the t-th row of sensors, and determine the positions of the N sensors in the t-th row of sensors in the sensing array according to the clock signal and a preset order; the preset order is used to indicate the one-to-one correspondence between the M gate driving signals and the M gate control lines; After obtaining the read electrical values of the sensing signals generated by each of the multiple sensors in the sensing array, construct a matrix to be calibrated according to the read electrical values of the sensing signals of each of the multiple sensors and the positions of each of the multiple sensors in the sensing array; The matrix to be calibrated includes M×N read electrical values, where the M rows of read electrical values of the matrix to be calibrated are in one-to-one correspondence with the M rows of sensors in the sensing array, and the N columns of read electrical values in the matrix to be calibrated are in one-to-one correspondence with the N columns of sensors in the sensing array; Calibrate the read electrical values of the sensing signals of each sensor in the sensing array according to the orthogonal product of the matrix to be calibrated and the calibration parameter set, and obtain the calibrated electrical values of the sensing signals of each sensor.

22. The electronic device according to any one of claims 18 to 21, characterized in that, the electronic device further includes a processing chip, and the processing chip is coupled to the reading chip; the reading chip is further configured to: send the calibrated electrical values of the sensing signals of each of the multiple sensors to the processing chip; the processing chip is configured to: generate a sensing image according to the calibrated electrical values of the sensing signals of each of the multiple sensors, the sensing image includes a plurality of pixel points, the positions of the plurality of pixel points in the sensing image are in one-to-one or one-to-many correspondence with the positions of the plurality of sensors in the sensing array, and wherein the pixel value of each pixel point is obtained according to the calibrated electrical values of the sensing signals of one or more sensors corresponding to the pixel point.

23. A data processing method, characterized in that, includes: Obtain a calibration parameter set, the calibration parameter set includes a plurality of calibration parameters, the plurality of calibration parameters are in one-to-one correspondence with a plurality of sensors, and each calibration parameter is used to calibrate the read electrical value of the sensing signal generated by the corresponding sensor, wherein the read electrical values of the sensing signals generated by at least two of the plurality of sensors according to the same sensing information are different, and the electrical value is a voltage value or a current value; Use each of the plurality of calibration parameters to calibrate the read electrical value of the sensing signal generated by the corresponding sensor, and obtain the calibrated electrical value of the sensing signal of each sensor, wherein the calibrated electrical values of the sensing signals generated by every two of the plurality of sensors according to the same sensing information are the same.

24. The method according to claim 23, characterized in that, the calibration parameter set is obtained by the following method: Obtain the test electrical values of the sensing signals generated by each of the plurality of sensors after sensing the test sensing information; Determine a reference electrical value from the test electrical values respectively corresponding to the multiple sensors; Construct the calibration parameter set according to the reference electrical value, where the multiple calibration parameters included in the calibration parameter set are in one-to-one correspondence with the multiple sensors, and each calibration parameter is the ratio between the reference electrical value and the test electrical value corresponding to the sensor corresponding to the calibration parameter.

25. The method according to claim 23 or 24, wherein, the read electrical value of the induction signal generated by the i-th sensor is obtained based on the difference between the actual induction electrical value when the i-th sensor senses the sensing information and the initial electrical value when the i-th sensor does not sense the sensing information, and the acquisition method of the read electrical value of the induction signal generated by each sensor among the multiple sensors is the same as the acquisition method of the read electrical value of the induction signal generated by the i-th sensor.

Images