Substrate processing equipment

Abstract

A substrate processing apparatus with an improved exhaust structure includes: a reaction space formed between a processing unit and a substrate support unit; an exhaust unit surrounding the reaction space; an exhaust port having a channel inside; and a partition wall having an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 880622, filed July 30, 2019, with the United States Patent and Trademark Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a substrate processing apparatus, and more specifically, to a substrate processing apparatus having an improved venting structure. Background Technology

[0004] In semiconductor deposition processes, plasma processing can be performed at low temperatures compared to thermal processing, thus reducing thermal shock to semiconductor devices. Furthermore, reduced thermal shock to semiconductor deposition equipment improves equipment durability and component lifespan; therefore, plasma processing is used in many processes.

[0005] In plasma deposition processes, plasma is generated by applying RF power to the reactive gas supplied to the reaction space to ionize the reactive gas. The ionized reactive gas is activated to react with the substrate, thereby forming a thin film on the substrate. Korean Patent Publication No. 10-2019-0032077 and Korean Patent No. 10-1680379 disclose the above-mentioned plasma deposition process.

[0006] Korean Patent Publication No. 10-2019-0032077 discloses an atomic layer deposition system as a plasma deposition process. Specifically, the disclosed atomic layer deposition system has a structure that exhausts gas from the reaction chamber via a pump connected to a pump pipe. To maximize the efficiency of the plasma processing, plasma needs to be generated on the substrate within the reaction space. However, parasitic plasma generated in areas outside the reaction space, such as in exhaust lines, can reduce the efficiency of the plasma processing within the reaction space. Summary of the Invention

[0007] One or more embodiments include a substrate processing apparatus that can prevent the generation of parasitic plasma in areas outside the reaction space, such as in the exhaust space.

[0008] One or more embodiments include a substrate processing apparatus with an exhaust structure that achieves efficient exhaust by reducing the volume of the exhaust space.

[0009] Other aspects will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0010] According to one or more embodiments, a substrate processing apparatus includes: a partition wall having an exhaust line therein; a substrate support unit included in the partition wall; a processing unit disposed above the substrate support unit; an exhaust unit connected to a reaction space between the substrate support unit and the processing unit; and an exhaust port connected to at least a portion of the exhaust unit, wherein the exhaust port is configured to connect the exhaust unit and the exhaust line inside the partition wall.

[0011] The exhaust space connected to the reaction space can be confined within the exhaust unit.

[0012] The exhaust unit may include a side barrier that restricts the reaction space.

[0013] The exhaust unit may also include: an outer wall disposed parallel to the baffle wall; and a connecting wall extending to connect the baffle wall and the outer wall.

[0014] The connecting wall can provide a contact surface between the exhaust unit and the treatment unit.

[0015] The substrate processing apparatus may further include a first surface and a second surface, wherein the exhaust line extends along the edge between the first surface and the second surface.

[0016] The substrate processing apparatus may further include a support portion configured to support the processing unit and the exhaust unit, wherein the support portion is disposed between the exhaust port and the partition wall.

[0017] The support may include a path connecting the exhaust port and the exhaust line.

[0018] The cross-sectional area of ​​the path and the cross-sectional area of ​​the exhaust pipe can be the same.

[0019] The substrate processing equipment may also include a sealing member disposed between the support and the partition wall.

[0020] The substrate processing apparatus may also include a gas flow control ring disposed on the support.

[0021] The gas flow control ring can be disposed between the support portion and the substrate support unit, spaced apart from the substrate support unit.

[0022] The gas flow control ring can be configured to slide on the support.

[0023] The exhaust port may include a channel extending in a first direction toward the exhaust unit and in a second direction different from the first direction.

[0024] The exhaust unit can extend to surround the reaction space, and the exhaust port can be configured to communicate with a portion of the circumference of the exhaust unit.

[0025] The gas supplied to the center of the reaction space via the processing unit can be radially distributed to move toward the exhaust unit, and the gas can move along the inner space of the exhaust unit and be discharged through the exhaust port.

[0026] According to one or more embodiments, a substrate processing apparatus includes: a partition wall having a first exhaust line, a second exhaust line, a third exhaust line, and a fourth exhaust line therein; a first substrate support unit housed in the partition wall; a first processing unit on the first substrate support unit; a first exhaust unit connected to a first reaction space between the first substrate support unit and the first processing unit; a first exhaust port connected to at least a portion of the first exhaust unit; a second substrate support unit housed in the partition wall; a second processing unit on the second substrate support unit; a second exhaust unit connected to a second reaction space between the second substrate support unit and the second processing unit; a second exhaust port connected to at least a portion of the second exhaust unit; a third substrate support unit housed in the partition wall; and a third processing unit on the third substrate support unit. The unit includes: a third exhaust unit connected to a third reaction space between a third substrate support unit and a third processing unit; a third exhaust port connected to at least a portion of the third exhaust unit; a fourth substrate support unit housed in a partition wall; a fourth processing unit on the fourth substrate support unit; a fourth exhaust unit connected to a fourth reaction space between the fourth substrate support unit and the fourth processing unit; and a fourth exhaust port connected to at least a portion of the fourth exhaust unit, wherein a first exhaust port is configured to connect the first exhaust unit to a first exhaust line in the partition wall, a second exhaust port is configured to connect the second exhaust unit to a second exhaust line in the partition wall, a third exhaust port is configured to connect the third exhaust unit to a third exhaust line in the partition wall, and a fourth exhaust port is configured to connect the fourth exhaust unit to a fourth exhaust line in the partition wall.

[0027] The substrate processing apparatus may further include: a first connection port connected to the first exhaust line and the second exhaust line; a second connection port connected to the third exhaust line and the fourth exhaust line; an exhaust pump; and an external path connected to the first connection port and the exhaust pump and connected to the second connection port and the exhaust pump, wherein the external path is disposed outside the partition wall.

[0028] According to one or more embodiments, a substrate processing apparatus includes: a substrate support unit configured to support a substrate; a processing unit disposed above the substrate support unit and defining a reaction space between the substrate support unit and the processing unit; an exhaust unit providing an exhaust space connected to the reaction space; and an exhaust port communicating with the exhaust unit, wherein the exhaust port includes channels extending in a first direction toward the exhaust unit and in a second direction different from the first direction.

[0029] The substrate processing apparatus may also include a partition wall having an exhaust line therein, wherein the channel is in communication with the exhaust line of the partition wall. Attached Figure Description

[0030] These and / or other aspects will become apparent and more readily understood from the following description of embodiments in conjunction with the accompanying drawings, wherein:

[0031] Figure 1 and 2 A substrate processing apparatus according to an embodiment is schematically shown;

[0032] Figure 3 A substrate processing apparatus according to another embodiment is schematically shown;

[0033] Figure 4 and 5 A substrate processing apparatus according to an embodiment is schematically shown;

[0034] Figure 6 and 7 This is a perspective view showing an exhaust pipe and an inner cover that are separated from each other in a substrate processing apparatus according to an embodiment;

[0035] Figure 8 This is a perspective view showing an exhaust pipe, an inner cover, and a conductive ring that are separated from each other in a substrate processing apparatus according to an embodiment.

[0036] Figures 9 to 11 A substrate processing apparatus according to some embodiments is schematically illustrated; and

[0037] Figures 12 to 14 A substrate processing apparatus according to an embodiment is schematically shown. Detailed Implementation

[0038] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain aspects of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. When an expression such as “at least one” precedes the list of elements, it modifies the entire list of elements and does not modify any individual element of the list.

[0039] Embodiments of this disclosure are described in detail below with reference to the accompanying drawings.

[0040] The terminology used in this specification is for the purpose of explaining particular embodiments and not for limiting this disclosure. Therefore, unless the context clearly indicates otherwise, expressions used in the singular form in this specification also include their plural forms.

[0041] It will be understood that although the terms first, second, third, etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish individual elements, components, regions, layers, or parts. Similarly, terms such as “comprising” or “including” may be interpreted as indicating a feature, quantity, step, operation, constituent element, or combination thereof, but are not to be interpreted as excluding the possibility of the presence or addition of one or more other features, quantities, steps, operations, constituent elements, or combinations thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0042] Therefore, without departing from the teachings of the embodiments, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion. In the drawings, the illustrated shapes may be modified according to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this disclosure should not be construed as limited to the specific shapes of the components described in this specification, and may include, for example, changes in shape that occur during manufacturing.

[0043] To gain a full understanding of this disclosure, its advantages, and the objectives achieved by practicing this disclosure, please refer to the accompanying drawings illustrating preferred embodiments of this disclosure. In the drawings, the illustrated shapes may be modified according to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this disclosure should not be construed as limited to the specific shapes of the components described herein, and may include, for example, changes in shape that occur during manufacturing.

[0044] Figure 1 and 2 A substrate processing apparatus according to an embodiment is schematically shown. Figure 1 The substrate processing apparatus and a portion thereof (a portion of the exhaust unit 120 in which no opening is formed) are shown. Figure 2 The substrate processing apparatus and another part of the substrate processing apparatus (a portion of the exhaust unit 120 in which an opening OP is formed) are shown.

[0045] Reference Figure 1 and 2The substrate processing apparatus may include a partition wall 100, a substrate support unit 150, a processing unit 110, an exhaust unit 120, and a conductive extension 130. The conductive extension 130 may be omitted. A reaction space 51 and an exhaust space 55 connected to the reaction space 51 may be formed in the substrate processing apparatus.

[0046] The partition wall 100, serving as a chamber for housing the substrate support unit 150, can be referred to as the chamber body. In one embodiment, the reactor including the reaction space 51 can be referred to as the inner chamber, and the overall structure of the substrate processing apparatus surrounding multiple reactors (e.g., four reactors) can be referred to as the outer chamber. An exhaust line 18 can be disposed inside the partition wall 100. In some embodiments, the exhaust line 18 can be formed to extend along the interior of the sidewall of the partition wall 100. In one embodiment, the substrate processing apparatus may include a first surface and a second surface adjacent to the first surface, and the exhaust line 18 may extend along the edge between the first surface and the second surface. In another embodiment, the exhaust line 18 may extend along the interior of the lower wall of the partition wall 100.

[0047] The processing unit 110 may be disposed above the substrate support unit 150 configured to support the substrate. A reaction space 51 may be defined between the substrate support unit 150 and the processing unit 110. The processing unit 110 may serve as a first cover for defining the upper surface of the reaction space 51. In other words, the first cover disposed above the substrate support unit 150 may include at least one processing unit 110.

[0048] The processing unit 110 may include components that perform appropriate functions based on the functions of the substrate processing equipment. For example, when the substrate processing equipment performs a deposition function, the processing unit 110 may include a reaction material supply unit, such as a spray head assembly. In another embodiment, when the reactor performs a polishing function, the processing unit 110 may include a polishing pad.

[0049] The processing unit 110 can be a conductor and can be used as an electrode for generating plasma. In other words, the processing unit 110 can be used as an electrode for generating plasma. In the following description, the processing unit 110 of the above type (the processing unit 110 is used as an electrode) can be referred to as a gas supply electrode.

[0050] The substrate support unit 150 can be configured to provide an area thereon on which an object to be processed (not shown), such as a semiconductor or display substrate, is placed. The substrate support unit 150 can be supported by a support portion (not shown) capable of moving up and down and rotating. Furthermore, the substrate support unit 150 can be a conductor and can be used as an electrode for generating plasma, i.e., a counter electrode to a gas supply electrode.

[0051] An exhaust unit 120 may be disposed between the processing unit 110 and the support TLD. The exhaust unit 120 may extend to surround the reaction space 51. The exhaust unit 120 may be made of a non-conductive material, such as an insulating material. Conversely, the support TLD may be made of a conductive material, such as a conductor. Therefore, a potential difference may be formed between the exhaust unit 120, which is disposed between the processing unit 110 (which serves as an electrode) and the support TLD (made of a conductor), and the exhaust space 55 in the exhaust unit 120. This potential difference may induce parasitic plasma, and as described below, since a conductive extension 130 is introduced into the exhaust unit 120, the aforementioned potential difference can be canceled out, thus preventing the generation of parasitic plasma.

[0052] In one embodiment, the exhaust unit 120 may serve as a second cover defining a side surface of the reaction space 51. The second cover including the exhaust unit 120 may include an exhaust space 55 connected to the reaction space 51. Therefore, the exhaust unit 120 can provide an exhaust space 55. Furthermore, the exhaust unit 120 can provide a space for accommodating the processing unit 110. When the processing unit 110 is accommodated in this space, the processing unit 110 can contact the exhaust unit 120.

[0053] The exhaust unit 120 may include a barrier wall W disposed between the reaction space 51 and the exhaust space 55. A first surface of the barrier wall W, such as its outer surface, may define the reaction space 51, and a second surface of the barrier wall W, i.e., its inner surface opposite to the first surface, may define the exhaust space 55. For example, the reaction space 51 may be defined by the first surface of the barrier wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110, which serves as a first cover. In other words, the side of the reaction space 51 may be limited by the barrier wall W of the exhaust unit 120.

[0054] The exhaust unit 120 can provide a portion of the space for processing the object to be processed. For example, when the substrate processing apparatus performs a deposition function, the exhaust unit 120 can define a reaction space 51 for deposition. In addition, an exhaust space 55 can be defined in the exhaust unit 120.

[0055] The conductive extension 130 can be configured to prevent the generation of parasitic plasma in the exhaust space 55. For example, the conductive extension 130 can extend around at least a portion of the exhaust space 55, or it can be grounded. Therefore, the exhaust space 55 can be surrounded by the conductive extension 130, thereby preventing the generation of parasitic plasma in the exhaust space 55.

[0056] The conductive extension 130 can extend from the inner surface of the exhaust space 55. The conductive extension 130 can extend from the baffle wall W. Furthermore, the conductive extension 130 can be configured to contact the exhaust unit 120, which serves as a second cover. As a detailed example, the conductive extension 130 can contact the second surface, i.e., the inner surface, of the baffle wall W defining the exhaust space 55, and the conductive extension 130 can extend along the second surface.

[0057] In the example, the exhaust unit 120 may include a connecting wall C and an outer wall O extending from the barrier wall W. The outer wall O of the exhaust unit 120 may be arranged parallel to the barrier wall W and may contact the support TLD. The connecting wall C of the exhaust unit 120 may extend to connect the barrier wall W to the outer wall O. The connecting wall C may provide a contact surface to the processing unit 110. The processing unit 110, which serves as a first cover, and the exhaust unit 120, which serves as a second cover, may contact each other through the contact surfaces.

[0058] The conductive extension 130 can extend along the blocking wall W, connecting wall C, and outer wall O of the exhaust unit 120. In other words, as Figure 2 As shown, except for the space E adjacent to the barrier wall W connecting the reaction space 51 and the exhaust space 55 in the first part of the exhaust unit 120, the conductive extension 130 may extend to completely surround the exhaust space 55. The conductive extension 130 formed as described above may be disposed between the center of the exhaust space 55 and the exhaust unit 120. In another embodiment, one surface of the conductive extension 130 disposed between the center of the exhaust space 55 and the exhaust unit 120 may contact the exhaust unit 120.

[0059] In an optional embodiment, the conductive extension 130 may extend along the barrier wall W, the connecting wall C, the outer wall O, and the support TLD. In other words, the conductive extension 130 may extend from the exhaust unit 120 toward the support TLD. Therefore, the conductive extension 130 may contact the support TLD. The conductive extension 130 may be electrically connected to the support TLD, and thus, the conductive extension 130 and the support TLD may have the same potential. For example, when the support TLD is grounded, the conductive extension 130 may also be grounded.

[0060] The conductive extension 130 may extend within a portion of the exhaust space 55 in the second part of the exhaust unit 120. For example, the conductive extension 130 may include an opening providing a communication channel between the exhaust space 55 and the exhaust path. In one example, the opening may be implemented as a groove. In another example, the opening may be implemented as a hole. In yet another example, the conductive extension 130 may have a first portion and a second portion with an opening between them, and the opening may be formed such that the first portion and the second portion are separated from each other, i.e., the conductive extension 130 has a cutout shape. In this case, the conductive extension 130 may extend in the form of an open loop, wherein at least a portion of the conductive extension 130 is separated from it.

[0061] The conductive extension 130 can extend to have a circumference with a shape corresponding to the shape of the substrate. In this case, the first region defined by the circumference of the barrier wall W formed as the conductive extension 130 can be larger than the second region defined by the substrate. Furthermore, the third region defined by the circumference of the outer wall O formed as the conductive extension 130 can be larger than both the first region defined by the barrier wall W and the second region defined by the substrate.

[0062] For example, when the substrate is a circular substrate, the barrier wall W of the conductive extension 130 can also extend to have a first circular shape. Furthermore, the outer wall O of the conductive extension 130 can also extend to have a second circular shape. In this case, the radius of the first circle, i.e., the distance from the center of the reaction space 51 to the barrier wall W, can be greater than the radius of the substrate. Furthermore, the radius of the second circle, i.e., the distance from the center of the reaction space 51 to the outer wall O, can be greater than the radius of the first circle.

[0063] In an optional embodiment, the substrate processing apparatus may further include a conductive ring 12. The conductive ring 12 may be electrically connected to the conductive extension 130. The conductive ring 12 may be configured to contact the conductive extension 130. For example, the conductive ring 12 may be configured to contact the conductive extension 130 and the support TLD between the conductive extension 130 and the support TLD. Therefore, the conductive extension 130 may be electrically connected to the support TLD via the conductive ring 12. Therefore, when the support TLD is grounded, the conductive extension 130 may also be grounded.

[0064] In an alternative embodiment, the conductive ring 12 may include an elastomer. In one example, the elastomer may be configured to be elastic in a direction extending from the conductive extension 130 to the support TLD, for example, in a vertical direction. In another example, such as... Figure 2 As shown, the support portion TLD may include a groove, and the conductive ring 12 may be accommodated in the groove.

[0065] The support portion TLD can support the processing unit 110 and the exhaust unit 120 by contacting the exhaust unit 120. The support portion TLD can be supported by the partition wall 100. In this way, the support portion TLD can support the processing unit 110 as a first cover and the exhaust unit 120 as a second cover, and the support portion TLD can be used as a top cover, which covers the outer chamber by being supported by the partition wall 100.

[0066] A support portion TLD may be disposed between the partition wall 100 and the exhaust port 13. The support portion TLD may include a path P of the exhaust line 18 connecting the exhaust port 13 and the partition wall 100. In one embodiment, the cross-sectional area of ​​the path P and the cross-sectional area of ​​the exhaust line 18 may be substantially the same. For example, when the path P and the exhaust line 18 are formed in a circle, the diameter of the path P may be the same as the diameter of the exhaust line 18. In another embodiment, a sealing member (not shown) may be disposed between the support portion TLD and the partition wall 100. The sealing member may extend along the circumference of the path P or the circumference of the exhaust line 18, thereby preventing gas leakage from the path P to the exhaust line 18.

[0067] A support portion TLD can be disposed between the partition wall 100 and a cover (e.g., a second cover including the exhaust unit 120). A flow control ring (FCR) can be disposed on the support portion TLD. Furthermore, the flow control ring FCR can be disposed between the support portion TLD and the substrate support unit 150. The flow control ring FCR can be configured to slide on the support portion TLD. The flow control ring FCR can be spaced apart from the substrate support unit 150, forming a gap G, and the pressure balance between the reaction space 51 and the inner space of the outer chamber can be controlled by adjusting the gap G.

[0068] To achieve pressure balance, a filling gas can be introduced into the reaction space 51 from the lower space below the support TLD and the substrate support unit 150. This filling gas creates an air curtain in the gap G between the substrate support unit 150 and the gas flow control ring FCR. The air curtain prevents gas from the reaction space 51 from being introduced into the lower space.

[0069] In one embodiment, the fill gas may be a different gas from the gas supplied through the processing unit 110. For example, the fill gas may be an inert gas such as nitrogen or argon. In some embodiments, the fill gas may be a gas having a lower emission rate than the gas supplied to the reaction space 51 through the processing unit 110. When plasma is generated in the reaction space 51, the fill gas with a low emission rate can prevent the generation of parasitic plasma in the lower space below the support TLD and the substrate support unit 150. A barrier wall W may provide a gap E connecting the reaction space 51 and the exhaust space 55. The gap E may be formed between the exhaust unit 120 and the flow control ring FCR. The gap E may serve as a channel between the reaction space 51 and the exhaust space 55. Therefore, the reaction space 51 and the exhaust space 55 may communicate with each other through this channel.

[0070] In the above structure, the gas in the reaction space 51 is discharged in the lateral direction through the exhaust space 55. In other words, the gas in the reaction space 51 can be discharged through the exhaust space 55, the opening OP, the channel in the exhaust port 13, the path P of the support TLD, and the exhaust line 18 of the partition wall 100. Compared with the downstream gas discharge structure, i.e., the structure in which the gas in the reaction space 51 is discharged through the lower space below the substrate support unit 150, this gas discharge structure can have improved gas discharge efficiency. In detail, the lateral gas discharge structure according to the embodiment can have the following technical advantages.

[0071] 1) Reduced exhaust space volume—In the downstream gas exhaust structure, the lower space below the substrate support unit 150 is used as the exhaust space, whereas in the lateral gas exhaust structure, only the exhaust space 55 in the exhaust unit 120 is used as the exhaust space. Therefore, the volume of the exhaust space is reduced. This facilitates atomic layer deposition processes requiring rapid switching between different gases and reduces contamination sources caused by residual gases.

[0072] 2) Improve exhaust speed — As the volume of the exhaust space decreases, the exhaust volume can be reduced, thus improving the exhaust speed.

[0073] 3) Reduce residual gas – Since a large amount of gas can be discharged within a limited time, the residual gas in the reaction space and exhaust space can be reduced.

[0074] 4) Improved durability – Durability is improved due to the reduction of residual gases. Furthermore, since reactive or potentially corrosive residual gases are not discharged through the lower space, the lifespan of components located in the lower space can be extended.

[0075] 5) Prevent gas leakage - Since the exhaust gas is discharged through the interior of the chamber wall, i.e. through the exhaust pipe 18 of the partition wall 100, exhaust gas leakage can be prevented.

[0076] Back Figure 2 The exhaust unit 120, which serves as a second cover, can communicate with the exhaust port 13. The exhaust port 13 can be connected to at least a portion of the exhaust unit 120. For example, the exhaust port 13 can be configured to circumferentially communicate with a portion of the exhaust unit 120 (see [link to relevant documentation]). Figure 14 Therefore, gas in a portion of the exhaust space 55 can be discharged through the exhaust port 13.

[0077] Specifically, the gas supplied to the center of the reaction space 51 via the processing unit 110 can be radially distributed. Therefore, the radially distributed gas can move towards the exhaust space 55 of the exhaust unit 120. Since the exhaust port 13 is connected to a portion of the circumference of the exhaust unit 120, the radially distributed gas can flow along the inner path of the exhaust unit 120 towards the exhaust space 55. The gas flowing along the inner path of the exhaust unit 120 can be discharged through the opening OP and the exhaust port 13.

[0078] The exhaust port 13 may include channels extending in a first direction toward the exhaust unit 120 and a second direction different from the first direction. In one embodiment, an L-shaped or L-shaped channel may be formed in the exhaust port 13. Therefore, gas in the exhaust space 55 may be introduced into the exhaust port 13 in a lateral direction and discharged in a downward direction. In another example, gas in the exhaust space 55 may be introduced in a lateral direction and discharged in an upward direction. Gas discharged through the exhaust port 13 may be transferred to an exhaust pump (not shown) via an exhaust line 18, and the gas may be discharged to the outside by the exhaust pump.

[0079] Figure 3 A substrate processing apparatus according to another embodiment is illustrated schematically. The substrate processing apparatus according to this embodiment may be a modified example of the substrate processing apparatus according to the above embodiments. Redundant descriptions between embodiments are omitted.

[0080] Reference Figure 3 In the substrate processing apparatus, the contact wall 20 and the substrate support unit 150 can form a reaction space 51 while having surface contact and surface sealing. The substrate is mounted on the substrate support unit 150, and the lower part of the substrate support unit 150 can be connected to a device (not shown) that can move up and down for loading / unloading the substrate.

[0081] An exhaust space 55 according to this embodiment can be formed on the reaction space 51. In this case, the exhaust unit 120 forming the exhaust space and the conductive extension 130 extending in contact with the exhaust unit 120 can be formed above the reaction space 51. For example, the exhaust unit 120 and the conductive extension 130 can be formed above the processing unit 110.

[0082] A barrier wall W can be disposed between the reaction space 51 and the exhaust space 55. A first surface of the barrier wall W, for example, the surface facing the processing unit 110, can define the reaction space 51. A second surface of the barrier wall W, i.e., the surface opposite to the first surface, can define the exhaust space 55. For example, the reaction space 51 can be defined by the first surface of the barrier wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110.

[0083] The barrier wall W can provide a gap E connecting the reaction space 51 and the exhaust space 55. As described above, the gap E can be used as a communication channel connecting the reaction space 51 and the exhaust space 55.

[0084] The conductive extension 130 may extend along the second surface of the barrier wall W. Except for the gap E adjacent to the barrier wall W, the conductive extension 130 may extend to completely surround the exhaust space 55. The conductive extension 130 may be grounded, thus preventing the generation of parasitic plasma in the exhaust space 55. Therefore, power loss due to the generation of parasitic plasma can be prevented.

[0085] Figure 4 and 5 A substrate processing apparatus according to an embodiment is illustrated schematically. The substrate processing apparatus according to the embodiment may be a modified example of the substrate processing apparatus according to the above embodiment. Redundant descriptions between embodiments are omitted below.

[0086] Reference Figure 4 The reactant gas can be supplied to the reaction space 9 through the gas inlet 8 and the gas supply plate 3. The reactant gas can react with the substrate (not shown) to form a thin film on the substrate placed on the heater block 4. Then, the reactant gas can be discharged to the outside through the exhaust space 10 in the exhaust pipe 5 through the gap formed between the reaction space 9 and the exhaust pipe 5.

[0087] In one embodiment, the exhaust duct 5 and the flow control ring (FCR) 6 may comprise non-conductive material or ceramic. The gas supply plate 3 may be a nozzle and may be connected to the RF rod 2 as an upper electrode. The heater block 4 may be grounded as a lower electrode.

[0088] In plasma processing, the reactive gas introduced into the reaction space 9 can be excited by RF power supplied through the RF rod 2 and the gas supply plate 3. The excited reactive gas can be ionized, thereby generating plasma. The plasma A generated in the reaction space 9 can aid in the processing on the substrate, and can also be generated in the exhaust space 10.

[0089] Plasma A in reaction space 9 can be generated due to the potential difference between the upper electrode 3 and the grounded lower electrode 4. Similarly, a potential difference is generated between the upper electrode 3 and the top cover 7 facing the upper electrode 3 and grounded, so plasma B can be generated in exhaust space 10.

[0090] The plasma B generated in the exhaust space 10 can be referred to as parasitic plasma. It does not contribute to the substrate processing but reduces the efficiency of plasma A in the reaction space. For example, since a portion of the RF power generated by the RF generator is used to generate parasitic plasma, the RF power contributing to the actual reaction is significantly reduced. Therefore, the efficiency of plasma processing may deteriorate, potentially leading to instability in the substrate processing.

[0091] Conversely, refer to Figure 5 In the substrate processing apparatus according to the embodiment, the inner cover 11 can be inserted into the exhaust space 10 in the exhaust pipe 5. Specifically, the inner cover 11 can be inserted between the central portion of the exhaust pipe 5 and the exhaust space 10. The inner cover 11 may include a conductive material, such as a metallic material.

[0092] In one embodiment, the conductive ring 12 can be inserted into the step corner between the top cover 7 and the flow control ring 6. The inner cover 11 and the conductive ring 12 can contact each other, thus electrically connecting the inner cover 11 and the top cover 7. Therefore, the potential difference between the inner cover 11 and the top cover 7 can be eliminated.

[0093] In another embodiment, the inner cover 11 can be in close contact with the exhaust duct 5, with no space between the exhaust duct 5 and the inner cover 11. Therefore, even when gas is present in the exhaust space 10, the inner cover 11 can be located in the grounded area, just like the top cover 7. In addition, since there is no space between the exhaust duct 5 and the inner cover 11 during plasma processing, parasitic plasma will not be generated within the exhaust space 10.

[0094] Figure 6 and 7 This is an exploded view showing the exhaust pipe 5 and inner cover 11, which are separate from each other, included in the substrate processing apparatus according to an embodiment. The exhaust pipe 5 and inner cover 11 according to the embodiment can be modified examples of the exhaust unit and conductive extension according to the above embodiment, respectively. Redundant descriptions between embodiments are omitted.

[0095] refer to Figure 6The exhaust port 13 can be disposed on the surface of the exhaust pipe 5 and can be located between the exhaust space 10 and the exhaust line (not shown). Therefore, exhaust gas can be discharged to the exhaust line via the exhaust port 13. The exhaust structure can correspond to... Figure 1 and 2 The structure is that the gas in the exhaust space 55 is discharged through the exhaust port 13 to the exhaust line implemented in the partition wall 100.

[0096] from Figure 6 As can be seen from the structure of exhaust port 13, an exhaust pipe can be installed in the upper surface of exhaust port 13. The structure of the exhaust pipe differs from that in... Figure 1 and 2 The structure of the exhaust pipe disposed in the lower surface of the exhaust port 13 in the embodiment.

[0097] In one embodiment, an opening 14 may be formed on the surface of the inner cover 11. The opening 14 may have a recessed structure and may be obtained by removing a portion of the inner cover 11. In an alternative embodiment, the opening 14 may be... Figure 2 It is implemented in the form of an opening O.

[0098] An opening 14 may be formed between the exhaust space 10 and the exhaust port 13, and may serve as a path for exhaust to be discharged to the exhaust port 13. In addition, the opening 14 may provide a buffer space relative to the thermal expansion of the inner cover 11 during high-temperature processing.

[0099] Figure 7 It shows Figure 6 Example of modification for the inner cover 11. (See reference) Figure 7 A portion of the opening 14 of the inner cover 11 can be cut off from the inner cover 11. In other words, the inner cover 11 can be separated by the portion of the opening 14 in the form of a groove obtained by cutting off a portion of the inner cover 11. In this case, the inner cover 11 can have an open ring shape, wherein at least some portions of the inner cover 11 are separated from each other.

[0100] During high-temperature processing, since the coefficient of thermal expansion of the conductive inner cover 11 is greater than that of the non-conductive exhaust pipe 5, the exhaust pipe 5 may deform or be damaged as the inner cover 11 expands. However, as described above, by removing a portion of the inner cover 11, the shape and arrangement of the inner cover 11 can be maintained even when the inner cover 11 deforms due to thermal expansion. As a result, damage to the exhaust pipe 5 can be prevented during high-temperature processing.

[0101] Figure 8This is an exploded view showing the exhaust pipe 5, inner cover 11, and conductive ring 12, which are separated from each other, included in a substrate processing apparatus according to an embodiment. The exhaust pipe 5, inner cover 11, and conductive ring 12 according to the embodiment may be modified examples of those described in the above embodiments. Redundant descriptions between embodiments are omitted.

[0102] Reference Figure 8 The inner cover 11, serving as a conductive cover, can have a first portion P1 and a second portion P2, wherein the opening 14 is an opening located between them, and the first portion P1 and the second portion P2 can be separated from each other. Although Figure 7 The opening 14 of the inner cover 11 is achieved by cutting off a portion of the inner cover 11 to form a groove, but Figure 8 The opening 14 of the inner cover 11 is achieved by completely cutting off a portion of the inner cover 11.

[0103] The conductive ring 12 can be disposed below the inner cover 11. The conductive ring 12 may comprise a material with excellent thermal conductivity, specifically a metallic material. The conductive ring 12 performs the following two functions.

[0104] 1) Preventing the generation of parasitic plasma in the exhaust space 10: When the conductive ring 12 physically contacts the inner cover 11 disposed between the exhaust space 10 and the exhaust pipe 5, the potential difference of the inner cover 11 can be the same as the potential difference of the top cover 7 connected to the ground electrode. Therefore, the generation of parasitic plasma in the exhaust space 10 can be prevented.

[0105] 2) Buffering deformation of the inner cover 11 due to thermal expansion at high temperatures: The inner cover 11, which includes conductive material, may deform and expand at high temperatures. The conductive ring 12 can buffer the thermal expansion of the inner cover 11 between the inner cover 11 and the top cover 7. Therefore, the exhaust pipe 5, the inner cover 11, and the top cover 7 can be prevented from deforming or being damaged due to thermal expansion.

[0106] For this purpose, the conductive ring 12 can be implemented using an elastic body that is elastic in the vertical direction. The elastic body can increase the contact area between the inner cover 11 and the conductive ring 12. Therefore, the inner cover 11 can have the same potential difference as the grounding electrode passing through the conductive ring 12.

[0107] As described above, according to the above embodiments, by inserting the inner cover and conductive ring between the inner cover and the top cover in the exhaust space of the substrate processing equipment and adjusting the potential difference between them, it is possible to prevent the generation of parasitic plasma in the exhaust line of the reactor during plasma processing. Furthermore, by introducing a structure that removes a portion of the inner cover, damage to the exhaust line caused by the thermal expansion of the inner cover during high-temperature processing can be prevented.

[0108] Figures 9 to 11A substrate processing apparatus according to some embodiments is schematically illustrated. In detail, Figure 9 The diagram shows parts of the substrate processing apparatus other than the cover, i.e., the processing unit and the exhaust unit, such as exhaust lines 18 and 28, connection port CP or external path EC connected to an external pump, and exhaust port. Figure 10 This shows the view from the first direction. Figure 9 The substrate processing equipment, and Figure 11 This shows the view from the second direction. Figure 9 The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the above embodiments. Redundant descriptions between the following embodiments may be omitted.

[0109] Reference Figures 9 to 11 Exhaust lines 18 and 28 are formed inside partition wall 100. Exhaust lines 18 and 28 are connected to external path EC via connection port CP, and external path EC is connected to main exhaust path 211. Therefore, the gas in the reaction space is discharged to exhaust pump EP through exhaust ports 13 and 23, exhaust lines 18 and 28, external path EC and main exhaust path 211.

[0110] like Figure 10 As shown, the two reactors R1a and R1b in the first direction use internal vent lines 18; 18a and 18b, while the other two reactors in the opposite direction use other internal vent lines 28; 28a and 28b. The two internal vent lines 18 and 28 are connected to external paths EC and EC' via connection ports CP and CP', respectively. The external path EC can be implemented through one configuration or multiple configurations.

[0111] exist Figure 10 As can be seen, the four reactors use at least one external path EC, a main exhaust path 211, and an exhaust pump EP. The main exhaust path 211 may be further equipped with an isolation valve 210. Therefore, during maintenance, the isolation valve 210 can protect the exhaust pump EP from the external atmosphere. Furthermore, a pressure control valve, such as a throttle valve, may be added to the main exhaust path 211. The external path EC may be fixed and movable without close contact with the lower surface of the partition wall 100 of the external chamber. In an alternative embodiment, without the external path EC, the two internal exhaust lines 18 and 28 may be connected to each other inside the bottom wall of the partition wall 100 of the external chamber, thereby directly connecting to the main exhaust path 211.

[0112] Return to reference Figure 9 The first external path EC, connected to the first connection port CP, can extend toward the first corner C1 of the external chamber below the partition wall 100. Furthermore, it connects to the second connection port ( Figure 11The second external path EC' of the first external path EC' can extend toward the second corner C2 of the external chamber below the partition wall 100. The exhaust pump EP can be disposed on a surface of the substrate processing equipment, for example, corresponding to the center between the first corner C1 and the second corner C2. The first external path EC can extend from the portion extending from the first corner C1 toward the exhaust pump EP. Similarly, the second external path EC' can also extend from the portion extending from the second corner C2 toward the exhaust pump EP.

[0113] Figures 12 to 14 A substrate processing apparatus according to an embodiment is illustrated schematically. The substrate processing apparatus according to these embodiments may be modified examples of the substrate processing apparatus according to the above embodiments. Redundant descriptions between the following embodiments may be omitted.

[0114] Reference Figure 12 The top surface of the multi-reactor chamber 311 is shown. Multiple reactors R are disposed within chamber 311, and one side of each reactor R is connected to an exhaust port 313. Figure 12 As can be seen, each reactor R is connected to each exhaust port 313.

[0115] Multiple exhaust lines 318 may be formed inside the partition wall of the chamber 311. For example, the chamber 311 may have a rectangular shape, and the exhaust lines 318 may include a first exhaust line 318a, a second exhaust line 318b, a third exhaust line 318c, and a fourth exhaust line 318d. In some embodiments, the first to fourth exhaust lines may be arranged corresponding to the four vertices of the rectangle.

[0116] Chamber 311 may include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor may include a substrate support unit, a processing unit, an exhaust unit, and an exhaust port.

[0117] In detail, the first reactor may include a first substrate support unit (not shown) housed in a partition wall of chamber 311, a first processing unit 312a on the first substrate support unit, a first exhaust unit 314a connected to a first reaction space between the first substrate support unit and the first processing unit 312a, and a first exhaust port 313a connected to at least a portion of the first exhaust unit 314a. In this case, the first exhaust port 313a may be configured to connect the first exhaust unit 314a to a first exhaust line 318a inside the partition wall.

[0118] The second reactor may include a second substrate support unit (not shown) housed in a partition wall of chamber 311, a second processing unit 312b on the second substrate support unit, a second exhaust unit 314b connected to a second reaction space between the second substrate support unit and the second processing unit 312b, and a second exhaust port 313b connected to at least a portion of the second exhaust unit 314b. In this case, the second exhaust port 313b may be configured to connect the second exhaust unit 314b to a second exhaust line 318b inside the partition wall.

[0119] The third reactor may include a third substrate support unit (not shown) housed in a partition wall of chamber 311, a third processing unit 312c on the third substrate support unit, a third exhaust unit 314c connected to a third reaction space between the third substrate support unit and the third processing unit 312c, and a third exhaust port 313c connected to at least a portion of the third exhaust unit 314c. In this case, the third exhaust port 313c may be configured to connect the third exhaust unit 314c to a third exhaust line 318c inside the partition wall.

[0120] The fourth reactor may include a fourth substrate support unit (not shown) housed in a partition wall of chamber 311, a fourth processing unit 312d on the fourth substrate support unit, a fourth exhaust unit 314d connected to a fourth reaction space between the fourth substrate support unit and the fourth processing unit 312d, and a fourth exhaust port 313d connected to at least a portion of the fourth exhaust unit 314d. In this case, the fourth exhaust port 313d may be configured to connect the fourth exhaust unit 314d to a fourth exhaust line 318d inside the partition wall.

[0121] Combination Figures 9 to 12 As described above, the substrate processing apparatus may further include a first connection port connecting the first exhaust line and the second exhaust line. Figure 9 and 11 (CP in the middle) and the second connection port connecting the third exhaust pipe and the fourth exhaust pipe ( Figure 9 and 11 (CP' in the text). Furthermore, the substrate processing apparatus may also include a connection to the first connection port and an exhaust pump ( ). Figure 10 (EP in the middle) and the external path connecting the second connection port and the exhaust pump ( Figure 9 At least one of EC and EC' in room 311. External paths EC and EC' may be located outside the partition wall of room 311.

[0122] Figure 13A side perspective view of reactor R is shown. The reaction space of reactor R can be defined as the space surrounded by an exhaust unit 314 (such as an exhaust pipe), a gas flow control ring (FCR) 315 disposed below the cover, a processing unit such as a spray head (not shown) disposed in the inner space surrounded by the exhaust unit 314, and a substrate support unit such as a heater (not shown) disposed facing the processing unit.

[0123] The exhaust unit 314 and the gas flow control ring 315 are spaced apart from each other, forming a gap between them. For example, a separation space of about 1 mm can be formed, and the gas in the reaction space can be discharged to the exhaust pump (not shown) through this gap, i.e., the separation space, and through the exhaust space 316 and exhaust port 313 in the exhaust unit 314. The exhaust port 313 may include a passage for discharging gas in a downward direction.

[0124] exist Figure 13 and 14 In the figures, arrows indicate exhaust paths. As can be seen from the figures, according to the present invention, a transverse exhaust structure is employed, wherein the gas is discharged through the interior of the wall of the main body of the chamber.

[0125] Gas supplied from the top of the reactor through processing unit 312 to the reaction space can be radially distributed. The radially distributed gas can flow to the exhaust space 316 of exhaust unit 314. The gas radially distributed towards exhaust space 316 can be discharged into exhaust space 316 via the gap between exhaust unit 314 and gas flow control ring 315. The gas is discharged to the outside through exhaust port 313 connected to a surface of exhaust unit 314.

[0126] This provides a transverse exhaust structure, in which gases remaining in the reaction space are discharged through the side surface of the reactor. Specifically, exhaust lines 318 formed inside the partition wall are formed inside the side and lower walls of the main body of chamber 311, and exhaust lines 318 and exhaust units 314 are connected to each other through exhaust ports 313.

[0127] Typically, existing multi-reactor chambers employ a downstream exhaust structure, where gas is exhausted into a lower chamber space, specifically, the lower space of a substrate loading unit that includes a heater block on which a substrate is mounted. While these chambers offer the advantage of simple equipment construction, the large volume of the lower chamber space necessitates a significant amount of time for complete gas exhaust. Furthermore, for atomic layer deposition processes requiring rapid switching between different gases, subsequent exhaust gases can be introduced into the lower chamber space before the first exhaust gas is fully exhausted. This causes a chemical reaction between the remaining gas and the subsequently exhaust gas, generating unwanted solid reaction byproducts. These byproducts can lead to contamination of the chamber and substrate. Moreover, since reaction byproducts deposit on the lower surface of the substrate loading unit, including portions such as the heater block located in the lower chamber, the durability of the equipment may deteriorate, and the efficiency and performance of the moving unit may decrease. This can reduce preventative maintenance cycles (PM cycles), potentially decreasing productivity and increasing maintenance costs.

[0128] Conversely, in the substrate processing apparatus according to the above embodiment, the aforementioned problems can be solved by using exhaust pipes formed inside the side and lower walls of the chamber body. In other words, as the volume of the exhaust space decreases, the residual gas in the exhaust space can be reduced. Furthermore, since exhaust contact with parts disposed within the chamber, such as the lower parts of the substrate loading unit and the moving unit, is prevented, the durability of the chamber's components due to exhaust can be prevented. Additionally, PM cycles can be increased and maintenance costs can be reduced. Furthermore, the risk of leaking exhaust can be reduced by utilizing the interior of the chamber walls.

[0129] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A substrate processing apparatus, comprising: A partition wall containing exhaust pipes; The substrate support unit is housed within the partition wall; The processing unit is disposed above the substrate support unit; An exhaust unit is connected to the reaction space between the substrate support unit and the processing unit; and An exhaust port, which is connected to at least a portion of the exhaust unit. The exhaust port is configured as an exhaust pipe connecting the exhaust unit and the interior of the partition wall; The exhaust pipe extends vertically along the interior of the partition wall. The exhaust port includes an L-shaped channel through which gas introduced from the exhaust unit in the lateral direction is discharged in the downward direction. In this process, the gas is discharged downwards through the interior of the partition wall. The substrate processing equipment further includes a support portion configured to support the processing unit and the exhaust unit. The support portion is disposed between the exhaust port and the partition wall.

2. The substrate processing apparatus according to claim 1, wherein, The exhaust space connected to the reaction space is defined in the exhaust unit.

3. The substrate processing apparatus according to claim 2, wherein, The exhaust unit includes a side barrier that restricts the reaction space.

4. The substrate processing apparatus according to claim 3, wherein, The exhaust unit also includes: The outer wall, which is arranged parallel to the barrier wall; and Connecting wall, which extends to connect the barrier wall and the outer wall.

5. The substrate processing apparatus according to claim 4, wherein, The connecting wall provides a contact surface between the exhaust unit and the processing unit.

6. The substrate processing apparatus according to claim 1, further comprising: First surface and second surface The exhaust pipe extends along the edge between the first surface and the second surface.

7. The substrate processing apparatus according to claim 1, wherein, The support includes a path connecting the exhaust port and the exhaust pipe.

8. The substrate processing apparatus according to claim 7, wherein, The cross-sectional area of ​​the path is the same as the cross-sectional area of ​​the exhaust pipe.

9. The substrate processing apparatus according to claim 1, further comprising: A sealing member is disposed between the support and the partition wall.

10. The substrate processing apparatus according to claim 1, further comprising: A gas flow control ring is disposed on the support.

11. The substrate processing apparatus according to claim 10, wherein, The gas flow control ring is disposed between the support portion and the substrate support unit, and is spaced apart from the substrate support unit.

12. The substrate processing apparatus according to claim 10, wherein, The gas flow control ring is configured to slide on the support.

13. The substrate processing apparatus according to claim 1, wherein, The exhaust port includes a channel extending in a first direction toward the exhaust unit and in a second direction different from the first direction.

14. The substrate processing apparatus according to claim 1, wherein, The exhaust unit extends to surround the reaction space, and The exhaust port is configured to be circumferentially connected to a portion of the exhaust unit.

15. The substrate processing apparatus according to claim 14, wherein, The gas supplied to the center of the reaction space via the processing unit is radially distributed to move toward the exhaust unit, and The gas moves along the internal space of the exhaust unit and is discharged through the exhaust port.

16. A substrate processing apparatus, comprising: A substrate support unit is configured to support a substrate. A partition wall containing exhaust pipes; A processing unit is disposed above a substrate support unit and defines a reaction space between the substrate support unit and the processing unit; An exhaust unit that provides an exhaust space connected to the reaction space; as well as The exhaust port is connected to the exhaust unit. The exhaust port includes channels extending in a first direction toward the exhaust unit and in a second direction different from the first direction; The exhaust pipe extends vertically along the interior of the partition wall. The channel is L-shaped, and gas introduced from the exhaust unit in the lateral direction is discharged in the downward direction through the channel. In this process, the gas is discharged downwards through the interior of the partition wall. The substrate processing equipment further includes a support portion configured to support the processing unit and the exhaust unit. The support portion is disposed between the exhaust port and the partition wall.

17. The substrate processing apparatus according to claim 16, wherein, The channel is connected to the exhaust pipe of the partition wall.

Images