Method, apparatus and storage medium for improving system DRAM reliability

Abstract

The present invention discloses a method for improving the reliability of a system DRAM. The method includes: obtaining the performance voltage of the DRAM, and performing a reliability check on the voltage value of the performance voltage; calculating a voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability check; and adjusting the power supply voltage of the DRAM according to the voltage deviation value. The present invention also discloses a device and a computer-readable storage medium for improving the reliability of a system DRAM. The present invention can achieve higher reliability of the system DRAM.

Description

Technical Field

[0001] The present invention relates to the field of electronic devices, and particularly to a method, an apparatus, and a computer-readable storage medium for improving the reliability of a system DRAM. Background Art

[0002] DRAM (Dynamic Random Access Memory), namely dynamic random access memory, is a common system memory. The main principle of dynamic random access memory (DRAM) is to use the amount of internal storage to represent whether a bit is 1 or 0. At present, with the popularization of the Internet and intelligent devices, users have put forward higher requirements for the speed, power consumption, and reliability of DRAM.

[0003] However, at present, DRAM mainly achieves the purpose of ensuring the reliability of DRAM by setting voltage coupling / decoupling devices in the DRAM device to improve the bias sensing of the sense amplifier. However, the improvement degree of this control method is limited, resulting in unstable DRAM reliability. Summary of the Invention

[0004] The main object of the present invention is to provide a method, an apparatus, and a computer-readable storage medium for improving the reliability of a system DRAM, aiming to make the system DRAM have higher reliability.

[0005] To achieve the above object, the present invention provides a method for improving the reliability of a system DRAM, and the method for improving the reliability of a system DRAM includes the following steps:

[0006] Obtain the performance voltage of the DRAM, and perform reliability verification on the voltage value of the performance voltage;

[0007] Calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability verification;

[0008] Adjust the power supply voltage of the DRAM according to the voltage deviation value.

[0009] Optionally, the step of adjusting the power supply voltage of the DRAM according to the voltage deviation value includes:

[0010] After adjusting the power supply voltage of the DRAM, perform reliability verification on the voltage value of the performance voltage again;

[0011] If the verification result is failure, return to the step: calculate the voltage deviation value under the ideal model of the DRAM according to the verification result of the reliability verification.

[0012] Optionally, the step of calculating the voltage deviation value of the power supply voltage under the DRAM ideal model according to the verification result of the reliability check includes:

[0013] If the verification result is a failure, add a preset voltage increment value to the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage.

[0014] Optionally, the step of calculating the voltage deviation value of the power supply voltage under the DRAM ideal model according to the verification result of the reliability check further includes:

[0015] If the verification result is a success, subtract a preset voltage reduction value from the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage.

[0016] Optionally, the method for improving the reliability of the system DRAM further includes:

[0017] Obtain the power supply capacitance value of the DRAM, adjust the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage.

[0018] Optionally, the step of obtaining the power supply capacitance value of the DRAM, adjusting the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage includes:

[0019] Determine whether the power supply voltage value of the DRAM changes according to the voltage deviation value;

[0020] If the power supply voltage value of the DRAM changes, subtract a preset capacitance reduction value from the capacitance value of the DRAM to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance;

[0021] If the reliability check result is that the performance voltage is less than the preset threshold voltage, return to the step: subtract a preset capacitance reduction value from the capacitance value of the DRAM to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to the preset threshold voltage.

[0022] Optionally, the step of obtaining the power supply capacitance value of the DRAM, adjusting the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage further includes:

[0023] If the supply voltage value of the DRAM does not change, increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance;

[0024] If the reliability verification result shows that the performance voltage is greater than or equal to the preset threshold voltage, return to the step of increasing the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is less than the preset threshold voltage.

[0025] Optionally, the capacitance is a variable capacitance.

[0026] In addition, to achieve the above object, the present invention also provides a device for improving the reliability of the system DRAM. The device for improving the reliability of the system DRAM includes: a memory, a processor, and a program for improving the reliability of the system DRAM stored on the memory and executable on the processor. When the program for improving the reliability of the system DRAM is executed by the processor, the steps of the method for improving the reliability of the system DRAM as described above are implemented.

[0027] In addition, to achieve the above object, the present invention also provides a computer-readable storage medium. A program for improving the reliability of the system DRAM is stored on the computer-readable storage medium. When the program for improving the reliability of the system DRAM is executed by a processor, the steps of the method for improving the reliability of the system DRAM as described above are implemented.

[0028] The present invention provides a method, a device, and a computer storage medium for improving the reliability of a system DRAM. In this method, the performance voltage of the DRAM is obtained, and the voltage value of the performance voltage is subjected to reliability verification; according to the verification result of the reliability verification, the voltage deviation value of the supply voltage under the ideal model of the DRAM is calculated; and the supply voltage of the DRAM is adjusted according to the voltage deviation value. By the above method, the present invention can perform reliability verification on the performance voltage, and according to the result of the reliability verification, obtain the voltage deviation values of the supply voltages corresponding to the performance voltage and the performance voltage under the ideal model respectively, so as to adjust the supply voltage according to the voltage deviation value, so that the performance voltage based on the supply voltage is in an optimal logic output state, and the performance voltage can be well output logically, thereby improving the reliability of the system DRAM. Description of the Drawings

[0029] Figure 1 It is a schematic diagram of the device structure of the hardware operating environment involved in the embodiment solution of the present invention;

[0030] Figure 2Schematic flowchart of the first embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0031] Figure 3 Schematic flowchart of the second embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0032] Figure 4 Schematic flowchart of the third embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0033] Figure 5 Schematic flowchart of the fourth embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0034] Figure 6 Schematic flowchart of the fifth embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0035] Figure 7 Schematic flowchart of the sixth embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0036] Figure 8 Schematic diagram of the logical output of the first embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0037] Figure 9 Schematic diagram of the voltage calculation process of the third embodiment of the method for improving the reliability of the system DRAM according to the present invention;

[0038] Figure 10 Schematic diagram of the capacitance calculation process of the sixth embodiment of the method for improving the reliability of the system DRAM according to the present invention.

[0039] The realization, functional features and advantages of the object of the present invention will be further described in conjunction with the embodiments with reference to the accompanying drawings. Detailed implementation manners

[0040] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0041] As Figure 1 shown, Figure 1 is the schematic diagram of the device structure of the hardware operating environment involved in the embodiment solution of the present invention.

[0042] The terminal in the embodiment of the present invention can be a PC, or a terminal device with data processing functions such as a smart phone, a tablet computer, a portable computer, etc.

[0043] As Figure 1As shown in the figure, the terminal may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, and a communication bus 1002. Among them, the communication bus 1002 is used to realize the connection and communication between these components. The user interface 1003 may include a display screen (Display) and an input unit such as a keyboard (Keyboard). Optionally, the user interface 1003 may further include a standard wired interface and a wireless interface. The network interface 1004 may optionally include a standard wired interface and a wireless interface (such as a WI-FI interface). The memory 1005 may be a high-speed RAM memory or a stable memory (non-volatile memory), such as a disk memory. Optionally, the memory 1005 may also be a storage device independent of the aforementioned processor 1001.

[0044] Optionally, the terminal may further include a camera, an RF (Radio Frequency) circuit, sensors, an audio circuit, a Wi-Fi module, and so on. Among them, the sensors include, for example, a light sensor, a motion sensor, and other sensors. Specifically, the light sensor may include an ambient light sensor and a proximity sensor. Among them, the ambient light sensor can adjust the brightness of the display screen according to the brightness of the ambient light, and the proximity sensor can turn off the display screen and / or the backlight when the mobile terminal is moved to the ear. As a kind of motion sensor, the gravity acceleration sensor can detect the magnitude of acceleration in each direction (generally three axes). When stationary, it can detect the magnitude and direction of gravity and can be used for applications that identify the posture of the mobile terminal (such as horizontal and vertical screen switching, related games, magnetometer posture calibration), vibration recognition related functions (such as a pedometer, tapping), etc.; of course, the mobile terminal can also be configured with other sensors such as a gyroscope, a barometer, a hygrometer, a thermometer, an infrared sensor, etc., which will not be elaborated here.

[0045] Those skilled in the art can understand that Figure 1 the terminal structure shown in the figure does not constitute a limitation on the terminal. It may include more or fewer components than shown in the figure, or combine some components, or have different component arrangements.

[0046] Such as Figure 1 As shown in the figure, the memory 1005, as a computer storage medium, may include an operating system, a network communication module, a user interface module, and a program for improving the reliability of the system DRAM.

[0047] In Figure 1In the terminal shown, the network interface 1004 is mainly used to connect to the background server and communicate data with the background server; the user interface 1003 is mainly used to connect to the client (user side) and communicate data with the client; and the processor 1001 can be used to call the program stored in the memory 1005 to improve the reliability of the system DRAM and perform the following operations:

[0048] Obtain the performance voltage of the DRAM and perform a reliability check on the voltage value of the performance voltage;

[0049] Calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability check;

[0050] Adjust the power supply voltage of the DRAM according to the voltage deviation value.

[0051] Furthermore, the processor 1001 can call the program stored in the memory 1005 to improve the reliability of the system DRAM and also perform the following operations:

[0052] The step of adjusting the power supply voltage of the DRAM according to the voltage deviation value includes:

[0053] After adjusting the power supply voltage of the DRAM, re-perform a reliability check on the voltage value of the performance voltage;

[0054] If the check result is a failure, return to the step: calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability check.

[0055] Furthermore, the processor 1001 can call the program stored in the memory 1005 to improve the reliability of the system DRAM and also perform the following operations:

[0056] The step of calculating the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability check includes:

[0057] If the check result is a failure, increase the voltage test value of the power supply voltage by a preset voltage increment value to obtain a new voltage test value of the power supply voltage.

[0058] Furthermore, the processor 1001 can call the program stored in the memory 1005 to improve the reliability of the system DRAM and also perform the following operations:

[0059] The step of calculating the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability check further includes:

[0060] If the verification result is successful, subtract a preset voltage reduction value from the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage.

[0061] Further, the processor 1001 may call a program stored in the memory 1005 to improve the reliability of the system DRAM and further perform the following operations:

[0062] The method for improving the reliability of the system DRAM further includes:

[0063] Obtain the power supply capacitance value of the DRAM, adjust the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage.

[0064] Further, the processor 1001 may call a program stored in the memory 1005 to improve the reliability of the system DRAM and further perform the following operations:

[0065] The steps of obtaining the power supply capacitance value of the DRAM, adjusting the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage include:

[0066] Determine whether the power supply voltage value of the DRAM changes according to the voltage deviation value;

[0067] If the power supply voltage value of the DRAM changes, subtract a preset capacitance reduction value from the capacitance value of the DRAM to obtain an adjusted capacitance test value, and perform a reliability verification on the adjusted capacitance;

[0068] If the reliability verification result is that the performance voltage is less than the preset threshold voltage, return to the step: subtract a preset capacitance reduction value from the capacitance value of the DRAM to obtain an adjusted capacitance test value, and perform a reliability verification on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to the preset threshold voltage.

[0069] Further, the processor 1001 may call a program stored in the memory 1005 to improve the reliability of the system DRAM and further perform the following operations:

[0070] The steps of obtaining the power supply capacitance value of the DRAM, adjusting the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage further include:

[0071] If the power supply voltage value of the DRAM does not change, increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance;

[0072] If the result of the reliability check is that the performance voltage is greater than or equal to a preset threshold voltage, return to the step: increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is less than the preset threshold voltage.

[0073] Further, the processor 1001 can call the program stored in the memory 1005 to improve the reliability of the system DRAM and also perform the following operations:

[0074] The capacitance is a variable capacitance.

[0075] The specific embodiments of the device for improving the reliability of the system DRAM of the present invention are basically the same as those of the following embodiments of the method for improving the reliability of the system DRAM, and will not be described in detail here.

[0076] Refer to Figure 2 , Figure 2 , which is a schematic flowchart of the first embodiment of the method for improving the reliability of the system DRAM of the present invention. The method for improving the reliability of the system DRAM includes:

[0077] Step S100, obtain the performance voltage of the DRAM, and perform a reliability check on the voltage value of the performance voltage;

[0078] For the problem that after the DRAM package is integrated into the system, factors such as system load and environmental deterioration cause the reliability of the DRAM system to deteriorate or even the system to crash, the present invention proposes a method to make the system DRAM have higher reliability on the premise of ensuring speed and power consumption.

[0079] For easy understanding, first introduce the output logic of the DRAM chip. Please refer to Figure 8, when the presented voltage is 0V, the output of the DRAM chip is "0". When the power supply voltage is stable and the presented voltage output can be any one of the voltage values V1, V2 or V3, and the voltage value of the presented voltage is not 0 at this time, theoretically the DRAM chip should output "1". However, affected by many factors such as the environment, process technology, and aging degree, when the voltage value of the presented voltage is V1, since V1 is lower than the threshold voltage value Vtrip of the DRAM chip, the DRAM chip will logically output an error and output "0", thus affecting the reliability of the output result of the DRAM chip and resulting in low reliability of the system DRAM. Therefore, the present application proposes a method to make the system DRAM have higher reliability. By adjusting, the voltage value of the presented voltage is always kept above the threshold voltage value, so that the presented voltage can logically always output correctly, thereby improving the reliability of the system DRAM. Since the presented voltage will fluctuate based on the power supply voltage, and the power supply voltage is the voltage value provided by the designed system power supply, this solution adjusts the power supply voltage so that the presented voltage that fluctuates according to the power supply voltage can be stabilized within a reasonable range, so that the presented voltage can output correctly and improve the reliability of the system DRAM. In this embodiment, the presented voltage of the DRAM is obtained, and the voltage value of the presented voltage is subjected to a reliability check. The reliability check is to perform an output logic verification to determine whether the logical output result of the presented voltage is correct.

[0080] Step S200, calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability check;

[0081] After performing the reliability check, calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability check. That is, according to the verification result of the reliability check, calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM. The ideal model of the DRAM is the optimal presented voltage for the logical output of the system DRAM, such as V2. The voltage deviation value is the difference between the power supply voltage corresponding to the optimal presented voltage of the DRAM ideal model and the real-time power supply voltage. For example, if the presented voltage under the ideal model of the DRAM is V2, when the actually measured presented voltage is V1 and the reliability check cannot be passed at this time, then through calculation, the difference between the power supply voltage corresponding to the presented voltage of V1 and the power supply voltage corresponding to the presented voltage of V2 of the DRAM ideal model is obtained as the voltage deviation value.

[0082] When the actually measured performance voltage is V3, since V3 being too high will increase power consumption and is prone to ringing, reducing reliability. Therefore, in this embodiment, although the performance voltage is V3 and has passed the reliability verification, the ideal supply voltage value corresponding to the performance voltage of V3 is calculated using the DRAM ideal model, and the difference between the actual voltage with the performance voltage of V3 and the ideal supply voltage value corresponding to the performance voltage of V3 is calculated as the voltage deviation value.

[0083] Of course, in a specific embodiment, since V3 has passed the reliability check, no processing or adjustment may be made to V3 either.

[0084] Step S300, adjust the supply voltage of the DRAM according to the voltage deviation value.

[0085] After obtaining the voltage deviation value of the supply voltage under the DRAM ideal model, the supply voltage of the DRAM is adjusted according to the voltage deviation value so that the adjusted performance voltage is stably output to an ideal state such as V2. The supply voltage is adjusted to the state under the DRAM ideal model according to the voltage deviation value, that is, the performance voltage is adjusted to the optimal voltage for logical output, so that the performance voltage is in the optimal output state, improving the reliability of the system DRAM.

[0086] The present invention provides a method, device, and computer storage medium for improving the reliability of a system DRAM. In this method, the performance voltage of the DRAM is obtained, and the voltage value of the performance voltage is subjected to a reliability check; the voltage deviation value of the supply voltage under the DRAM ideal model is calculated according to the verification result of the reliability check; the supply voltage of the DRAM is adjusted according to the voltage deviation value. By the above method, the present invention can perform a reliability check on the performance voltage, and according to the result of the reliability check, obtain the voltage deviation values of the supply voltages corresponding to the performance voltage and the performance voltage under the ideal model respectively, so as to adjust the supply voltage according to the voltage deviation value, making the performance voltage based on the supply voltage in the optimal logical output state, enabling the performance voltage to be well output logically, and thus improving the reliability of the system DRAM.

[0087] Please refer to Figure 3 , Figure 3 which is a schematic flowchart of the second embodiment of the method for improving the reliability of the system DRAM of the present invention.

[0088] Based on the above embodiment, in this embodiment, after step S300, it includes:

[0089] Step S310, after adjusting the supply voltage of the DRAM, re-perform a reliability check on the voltage value of the performance voltage;

[0090] If the verification result is a failure, return to step S200: Calculate the voltage deviation value under the DRAM ideal model according to the verification result of the reliability verification.

[0091] In this embodiment, after adjusting the power supply voltage of the DRAM, re-perform the reliability verification on the voltage value of the performance voltage, and verify the adjusted result. If the verification result is a failure, return to the step: Calculate the voltage deviation value under the DRAM ideal model according to the verification result of the reliability verification. Recalculate the voltage deviation value between the power supply voltage corresponding to the performance voltage V1 and the power supply voltage corresponding to the DRAM ideal model performance voltage V2.

[0092] Please refer to Figure 4 , Figure 4 which is a schematic flowchart of the third embodiment of the method for improving the reliability of the system DRAM of the present invention.

[0093] Based on the above embodiments, in this embodiment, after step S200, it includes:

[0094] If the verification result is a failure, execute step S210: Add a preset voltage increment value to the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage.

[0095] In this embodiment, in the step of calculating the voltage deviation value of the power supply voltage under the DRAM ideal model according to the verification result of the reliability verification, if the effect result is a failure, add a preset voltage increment value to the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage, and this voltage test value can be used for further reliability verification.

[0096] Furthermore, this embodiment further includes:

[0097] If the verification result is a success, execute step S220: Subtract a preset voltage reduction value from the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage.

[0098] In the step of calculating the voltage deviation value of the power supply voltage under the DRAM ideal model according to the verification result of the reliability verification, if the effect result is a success, subtract a preset voltage reduction value from the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage, and this voltage test value can be used for further reliability verification.

[0099] Specifically, referring to Figure 9 , according to the description of the above embodiments, as an embodiment, the entire voltage calculation process in the present application can be as Figure 9 shown:

[0100] First, use a self-learning algorithm to calculate and design the Vdevice curve, and verify whether it is successful under the default supply voltage. If the verification fails, it is defined as undervoltage; if the verification is successful, it is defined as overvoltage.

[0101] Secondly, if it is in the undervoltage state, such as the V1 state, adjust the supply voltage by increasing one step ΔV, and verify again. If the verification is successful, determine the current supply voltage and end. If the verification fails, repeat this step.

[0102] Secondly, if it is in the overvoltage state, such as the V2 or V3 state, adjust the supply voltage by decreasing one step ΔV, and verify again. If the verification fails, restore the previous supply voltage without reducing the step and end; if the verification is successful, repeat this step.

[0103] Finally, dynamically adjust the supply voltage to ensure that the performance voltage just meets the trigger threshold and ensure the stability of logic 1.

[0104] Please refer to Figure 5 , Figure 5 which is a schematic flowchart of the fourth embodiment of the method for improving the reliability of the system DRAM of the present invention.

[0105] Based on the above embodiments, the following steps are further included in this embodiment:

[0106] Step S400: Obtain the supply capacitance value of the DRAM, adjust the supply capacitance value of the DRAM according to a preset rule to obtain the adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to the preset threshold voltage.

[0107] There is a capacitor in the DRAM chip. The larger the capacitance value, the slower the slope. Then, the response time of the voltage adjustment of the DRAM is longer, and the supply voltage is calculated in real time by an algorithm, resulting in a time delay. Therefore, in order to further improve the reliability of the DRAM system, in this embodiment, the supply capacitance value of the DRAM is adjusted to improve the response rate of the DRAM, thereby improving the reliability of the DRAM. The main part of the time delay ratio is the response time of the external power supply, that is, the transient response performance of the power supply device for the performance voltage. In this embodiment, the supply capacitance value of the DRAM is obtained, and the supply capacitance value of the DRAM is adjusted according to a preset rule to obtain the adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to the preset threshold voltage. In this embodiment, the capacitor is a variable capacitor. Replacing the decoupling capacitor and filtering capacitor of the power supply in the existing solution with a variable capacitor can adjust the capacitance value of the capacitor while ensuring decoupling and filtering processing, so that the capacitor can ensure a good response rate.

[0108] In this embodiment, the capacitance value of the DRAM is obtained, and the capacitance value of the DRAM is adjusted so that the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage, which can well ensure that the response speed of the voltage adjustment of the DRAM is maintained within a certain response rate range, thereby ensuring the transient response performance of the Vdevice power supply device.

[0109] Please refer to Figure 6 , Figure 6 which is a schematic flowchart of the fifth embodiment of the method for improving the reliability of the system DRAM of the present invention.

[0110] Based on the above embodiments, in this embodiment, step S400 includes:

[0111] Step S410, determining whether the power supply voltage value of the DRAM changes according to the voltage deviation value;

[0112] In this embodiment, to obtain the adjusted DRAM capacitance value by adjusting the power supply capacitance value of the DRAM according to a preset rule, it is necessary to first determine whether the power supply voltage value of the DRAM changes according to the voltage deviation value.

[0113] If the power supply voltage value of the DRAM changes, then step S420 is executed: reducing the capacitance value of the DRAM by a preset capacitance reduction value to obtain an adjusted capacitance test value, and performing a reliability check on the adjusted capacitance;

[0114] If the power supply voltage value of the DRAM changes, then execute the step of reducing the capacitance value of the DRAM by a preset capacitance reduction value to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance.

[0115] If the result of the reliability check is that the performance voltage is less than the preset threshold voltage, then return to step S420: reducing the capacitance value of the DRAM by a preset capacitance reduction value to obtain an adjusted capacitance test value, and performing a reliability check on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to the preset threshold voltage.

[0116] If the result of the reliability check is that the performance voltage is less than the preset threshold voltage, then continue to reduce the capacitance value of the DRAM by a preset capacitance reduction value to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to the preset threshold voltage.

[0117] Please refer to Figure 7 , Figure 7 which is a schematic flowchart of the sixth embodiment of the method for improving the reliability of the system DRAM of the present invention.

[0118] Based on the above embodiments, in this embodiment, step S400 includes:

[0119] If the power supply voltage value of the DRAM does not change, then execute step S430: increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance;

[0120] In this embodiment, if the power supply voltage value of the DRAM does not change, then execute the step of increasing the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance.

[0121] If the result of the reliability verification is that the performance voltage is greater than or equal to the preset threshold voltage, then return to step S430: increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is less than the preset threshold voltage.

[0122] If the result of the reliability verification is that the performance voltage is greater than or equal to the preset threshold voltage, then continue to increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is less than the preset threshold voltage.

[0123] Specifically, referring to Figure 10 , according to the description of the above embodiments, as an embodiment, the entire capacitance calculation process in this application can be as Figure 10 shown:

[0124] First, if the power supply voltage changes, on the basis of the default capacitance value, the variable capacitance is adjusted down by one step and verified. If the verification fails, repeat this process; if the verification is successful, determine the current capacitance value and end.

[0125] Second, if the power supply voltage remains unchanged, on the basis of the default capacitance value, the variable capacitance is adjusted up by one step and verified. If the verification fails, restore the previous capacitance value and end; if the verification is successful, repeat this process.

[0126] Finally, a reasonable capacitance value ensures the response rate while taking into account the filtering and decoupling functions. In specific embodiments, it may also not be adjusted according to the change of the power supply voltage. For example, the capacitance value can be directly adjusted according to the effect result of the current reliability verification.

[0127] In addition, an embodiment of the present invention also proposes a computer-readable storage medium.

[0128] A program for improving the reliability of the system DRAM is stored on a computer-readable storage medium of the present invention. When the program for improving the reliability of the system DRAM is executed by a processor, the steps of the method for improving the reliability of the system DRAM as described above are implemented.

[0129] Among them, the method implemented when the program for improving the reliability of the system DRAM running on the processor is executed can refer to each embodiment of the method for improving the reliability of the system DRAM of the present invention, which will not be elaborated here.

[0130] It should be noted that in this article, the term "including", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or system including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or system. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of another identical element in the process, method, article or system including the element.

[0131] The serial numbers of the above embodiments of the present invention are only for description and do not represent the advantages or disadvantages of the embodiments.

[0132] Through the description of the above embodiments, those skilled in the art can clearly understand that the above embodiment methods can be implemented by means of software plus a necessary general hardware platform. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art can be embodied in the form of a software product. The computer software product is stored in a storage medium as described above (such as ROM / RAM, magnetic disk, optical disk), and includes several instructions for causing a terminal device (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods described in each embodiment of the present invention.

[0133] The above are only the preferred embodiments of the present invention, and do not limit the patent scope of the present invention accordingly. Any equivalent structure or equivalent process transformation made by using the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. A method for improving the reliability of the system DRAM, characterized in that, The method for improving the reliability of the system DRAM includes the following steps: Obtain the performance voltage of the DRAM, and perform reliability verification on the voltage value of the performance voltage. Herein, the performance voltage refers to the voltage of the dynamic random access memory, and the reliability verification is used to perform output logic verification to determine whether the logical output result of the performance voltage is correct; Calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability verification. Herein, the voltage deviation value is the difference between the optimal apparent voltage corresponding to the ideal DRAM model and the real-time power supply voltage; Adjust the power supply voltage of the DRAM according to the voltage deviation value.

2. The method for improving the reliability of the system DRAM according to claim 1, wherein After the step of adjusting the power supply voltage of the DRAM according to the voltage deviation value, it includes: After adjusting the power supply voltage of the DRAM, re-perform reliability verification on the voltage value of the performance voltage; If the verification result is a failure, return to the step: calculate the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability verification.

3. The method for improving the reliability of the system DRAM according to claim 1 or 2, characterized in that The step of calculating the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability verification includes: If the verification result is a failure, increase a preset voltage increment value to the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage.

4. The method for improving the reliability of the system DRAM according to claim 1 or 2, characterized in that, The step of calculating the voltage deviation value of the power supply voltage under the ideal model of the DRAM according to the verification result of the reliability verification further includes: If the verification result is a success, decrease a preset voltage decrease value to the voltage test value of the power supply voltage to obtain a new voltage test value of the power supply voltage.

5. The method for improving the reliability of the system DRAM according to claim 1, wherein The method for improving the reliability of the system DRAM further includes: Obtain the power supply capacitance value of the DRAM, and adjust the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage.

6. The method for improving the reliability of the system DRAM according to claim 5, wherein The step of obtaining the power supply capacitance value of the DRAM, and adjusting the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage includes: Determine whether the power supply voltage value of the DRAM changes according to the voltage deviation value; If the power supply voltage value of the DRAM changes, decrease a preset capacitance decrease value to the capacitance value of the DRAM to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance; If the reliability verification result is that the performance voltage is less than the preset threshold voltage, return to the step: decrease a preset capacitance decrease value to the capacitance value of the DRAM to obtain an adjusted capacitance test value, and perform reliability verification on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to the preset threshold voltage.

7. The method for improving the reliability of the system DRAM according to claim 6, characterized in that, The step of obtaining the power supply capacitance value of the DRAM, and adjusting the power supply capacitance value of the DRAM according to a preset rule to obtain an adjusted DRAM capacitance value until the performance voltage corresponding to the adjusted DRAM capacitance is greater than or equal to a preset threshold voltage further includes: If the power supply voltage value of the DRAM does not change, increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance; If the result of the reliability check is that the performance voltage is greater than or equal to a preset threshold voltage, return to the step: increase the capacitance value of the DRAM by a preset capacitance increase value to obtain an adjusted capacitance test value, and perform a reliability check on the adjusted capacitance until the performance voltage corresponding to the adjusted DRAM capacitance is less than the preset threshold voltage.

8. The method for improving the reliability of the system DRAM according to any one of claims 5-7, characterized in that, The capacitance is a variable capacitance.

9. A device for improving the reliability of the system DRAM, characterized in that, The device for improving the reliability of the system DRAM includes: a memory, a processor, and a program for improving the reliability of the system DRAM stored on the memory and executable on the processor. When the program for improving the reliability of the system DRAM is executed by the processor, the steps of the method for improving the reliability of the system DRAM according to any one of claims 1 to 8 are implemented.

10. A computer-readable storage medium, characterized in that, A program for improving the reliability of the system DRAM is stored on the computer-readable storage medium. When the program for improving the reliability of the system DRAM is executed by the processor, the steps of the method for improving the reliability of the system DRAM according to any one of claims 1 to 8 are implemented.

Images