Plasma processing device, processing method and upper electrode structure

Abstract

A plasma processing apparatus is provided for suppressing temporal changes in the tilted shape of an edge region of a substrate. The plasma processing apparatus includes: a chamber; a lower electrode for placing a substrate in the chamber; an edge ring disposed around the lower electrode; a component disposed around an upper electrode opposing the lower electrode in the chamber; a gas supply unit for supplying a processing gas to a processing space between the component and the lower electrode; and a high-frequency power supply unit for applying high-frequency power to the lower electrode or the upper electrode to generate plasma from the processing gas. The component includes an inner component and an outer component located outside the inner component, the outer component being radially outward of the edge ring, and at least a portion of the outer component being movable in the vertical direction in response to consumption of the edge ring.

Description

Technical Field

[0001] The present disclosure relates to a plasma processing device, a processing method, and an upper electrode structure. Background Art

[0002] When the sheath near the boundary between the focus ring and the substrate is tilted due to wear of the focus ring, the ion incidence becomes tilted, causing the etched shape at the edge of the substrate to be tilted rather than vertical. This tilted etched shape is also called a tilted shape. Patent Document 1 proposes a method for suppressing this tilted shape.

[0003] <Prior Art Literature>

[0004] <Patent Document>

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2017-212051 Summary of the Invention

[0006] <Problems to be Solved by the Invention>

[0007] The temporal change in the tilted shape generated in the edge region of the substrate may sometimes become a factor that reduces the yield.

[0008] The present disclosure provides a plasma processing apparatus, a processing method, and an upper electrode structure for suppressing temporal changes in the tilted shape generated in an edge region of a substrate.

[0009] <Methods used to solve the problem>

[0010] According to one embodiment of the present disclosure, a plasma processing apparatus is provided, comprising: a chamber; a lower electrode for placing a substrate in the chamber; an edge ring arranged around the lower electrode; a component arranged around an upper electrode opposite to the lower electrode in the chamber; a gas supply portion for supplying processing gas to a processing space between the component and the lower electrode; and a high-frequency power supply portion for applying high-frequency power for generating plasma of the processing gas to the lower electrode or the upper electrode, wherein the component comprises an inner component and an outer component located outside the inner component, the outer component being located radially outward relative to the edge ring, and at least a portion of the outer component being movable in an up and down direction according to consumption of the edge ring.

[0011] <Effects of the Invention>

[0012] According to one aspect, it is possible to suppress temporal changes in the tilted shape generated in the edge region of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 FIG. 1 is a schematic cross-sectional view illustrating an example of a plasma processing apparatus according to an embodiment.

[0014] Figure 2 FIG. 1 is a diagram showing one example of an inclined shape corresponding to the thickness of an outer member according to one embodiment.

[0015] Figure 3 1 is a diagram illustrating an example of the operation of the outer member according to one embodiment.

[0016] Figure 4 1 is a diagram illustrating an example of the operation of the outer member according to one embodiment.

[0017] Figure 5 1 is a diagram illustrating an example of the operation of the outer member according to one embodiment.

[0018] Figure 6 is a flowchart illustrating one example of a processing method according to one embodiment. DETAILED DESCRIPTION

[0019] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and overlapping descriptions may be omitted.

[0020] [Plasma processing equipment]

[0021] Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus 1 according to one embodiment. Figure 1 The plasma processing apparatus 1 shown is a capacitive coupling type apparatus and includes a chamber 10. The chamber 10 provides an inner space 10s therein.

[0022] The chamber 10 includes a chamber body 12. The chamber body 12 has a generally cylindrical shape. An internal space 10s is provided inside the chamber body 12. The chamber body 12 is formed, for example, from aluminum. A plasma-resistant film is provided on the inner wall surface of the chamber body 12. The corrosion-resistant film has a multilayer film structure formed of ceramics such as yttrium oxide and mullite, and resin. The multilayer film structure will be described later.

[0023] A passage 12 p is formed on the side wall of the chamber body 12 . The passage 12 p can be opened and closed by a gate valve 12 g . The gate valve 12 g is provided along the side wall of the chamber body 12 .

[0024] When the substrate W is transferred between the internal space 10 s and the outside of the chamber 10 , the gate valve 12 g is opened, and the substrate W is transferred into the chamber 10 through the passage 12 p .

[0025] A support portion 17 is provided on the bottom of the chamber body 12. The support portion 17 is formed of an insulating material. The support portion 17 has a generally cylindrical shape. The support portion 17 extends upward from the bottom of the chamber body 12 within the internal space 10s. A component 15 is provided on the support portion 17. The component 15 is formed of an insulator such as quartz. The component 15 can have a generally cylindrical shape. Alternatively, the component 15 can be a ring-shaped plate.

[0026] The plasma processing apparatus 1 further includes a substrate support, that is, a lower electrode 14 according to one exemplary embodiment. The lower electrode 14 is supported by a support portion 17. The lower electrode 14 is disposed in the internal space 10s. The lower electrode 14 is configured to support the substrate W within the chamber 10, that is, within the internal space 10s.

[0027] The lower electrode 14 includes a base 18 and an electrostatic chuck 20 according to an exemplary embodiment. The lower electrode 14 may further include an electrode plate 16. The electrode plate 16 is formed of a conductor such as aluminum and has a substantially disc-shaped shape. The base 18 is disposed on the electrode plate 16. The base 18 is formed of a conductor such as aluminum and has a substantially disc-shaped shape. The base 18 is electrically connected to the electrode plate 16. The outer peripheral surface of the base 18 and the outer peripheral surface of the electrode plate 16 are surrounded by a support portion 17.

[0028] The electrostatic chuck 20 is mounted on the base 18. Electrodes are embedded in the electrostatic chuck 20. The electrodes of the electrostatic chuck 20 are connected to a DC power supply 20p via a switch 20s. When a voltage from the DC power supply 20p is applied to the electrodes of the electrostatic chuck 20, an electrostatic attraction force is generated between the electrostatic chuck 20 and the substrate W. This electrostatic attraction force holds the substrate W on the electrostatic chuck 20.

[0029] The edge of the electrostatic chuck 20 and the outer peripheral surface of the base 18 are surrounded by the component 15. The electrostatic chuck 20 supports the substrate W and, according to one exemplary embodiment, an edge ring 26. The edge ring 26 is also referred to as a focus ring. The substrate W has, for example, a substantially disc-shaped shape and is placed on the electrostatic chuck 20. The edge ring 26 is mounted on the electrostatic chuck 20 so as to surround the edge of the substrate W. The outer edge portion of the edge ring 26 may extend over the component 15.

[0030] A flow path 18f is provided within the base 18. A heat exchange medium (e.g., refrigerant) is supplied to the flow path 18f via a pipe 22a from a cooler unit 22 disposed outside the chamber 10. The heat exchange medium supplied to the flow path 18f is returned to the cooler unit 22 via a pipe 22b. In the plasma processing apparatus 1, the temperature of the substrate W placed on the electrostatic chuck 20 is regulated by heat exchange between the heat exchange medium and the base 18.

[0031] The plasma processing apparatus 1 is provided with a gas supply line 24. The gas supply line 24 supplies a heat transfer gas (eg, He gas) from a heat transfer gas supply mechanism between the upper surface of the electrostatic chuck 20 and the back surface of the substrate W.

[0032] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is disposed above the lower electrode 14. The upper electrode 30 serves as a counter electrode for the lower electrode 14. The upper electrode 30 is supported on the upper portion of the chamber body 12 via a member 32. The member 32 is formed of an insulating material such as quartz. The upper electrode 30 and the member 32 seal the upper opening of the chamber body 12.

[0033] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 is the lower surface on the side of the internal space 10s and defines the internal space 10s. The top plate 34 may be formed of a low-resistance conductor or semiconductor that generates less Joule heat. A plurality of gas exhaust holes 34a are formed in the top plate 34. The plurality of gas exhaust holes 34a penetrate the top plate 34 in the thickness direction.

[0034] It should be noted that the lower electrode 14 is an electrode to which the second high-frequency power source 62 is connected, and serves as a mounting table for placing a substrate.

[0035] The support body 36 supports the top plate 34 in a detachable manner. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support body 36. A plurality of gas holes 36b are formed in the support body 36. The plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are respectively connected to the plurality of gas exhaust holes 34a. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0036] A gas supply unit GS is connected to the gas supply pipe 38. The gas supply unit GS supplies processing gas to the processing space between the upper electrode 30 and the lower electrode 14. The gas supply unit GS includes a gas source group 40, a valve group 41, a flow controller group 42, and a valve group 43. The gas source group 40 is connected to the gas supply pipe 38 via the valve group 41, the flow controller group 42, and the valve group 43. The gas source group 40 includes a plurality of gas sources. The valve group 41 and the valve group 43 each include a plurality of on-off valves. The flow controller group 42 includes a plurality of flow controllers. Each of the plurality of flow controllers of the flow controller group 42 is a mass flow controller or a pressure-controlled flow controller. Each of the plurality of gas sources of the gas source group 40 is connected to the gas supply pipe 38 via the corresponding on-off valve of the valve group 41, the corresponding flow controller of the flow controller group 42, and the corresponding on-off valve of the valve group 43.

[0037] In the plasma processing apparatus 1, a deposition shield 46 is detachably provided along the inner wall surface of the chamber body 12. The deposition shield 46 is also provided around the outer periphery of the support portion 17. The deposition shield 46 prevents etching byproducts from adhering to the chamber body 12. The deposition shield 46 is formed, for example, by forming a corrosion-resistant film on the surface of an aluminum member. The corrosion-resistant film may be formed of a ceramic such as yttrium oxide.

[0038] A baffle 48 is provided between the support body 17 and the sidewall of the chamber body 12. Baffle 48 is formed, for example, by forming a corrosion-resistant film on the surface of an aluminum member. The corrosion-resistant film can be formed of a ceramic such as yttrium oxide. Baffle 48 has multiple through-holes. An exhaust port 12e is provided below baffle 48 and at the bottom of the chamber body 12. An exhaust device 50 is connected to exhaust port 12e via an exhaust pipe 52. Exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump.

[0039] The plasma processing apparatus 1 further includes a first high-frequency power supply 61. The first high-frequency power supply 61 is configured to generate a first high-frequency power for plasma generation. The frequency of the first high-frequency power is, for example, within a range of 27 MHz to 100 MHz.

[0040] The first high-frequency power supply 61 is electrically connected to the base 18 via a matching box 63. The matching box 63 includes a matching circuit. The matching circuit of the matching box 63 is configured to match the impedance of the load side (lower electrode side) of the first high-frequency power supply 61 with the output impedance of the first high-frequency power supply 61. In other embodiments, the first high-frequency power supply 61 may be electrically connected to the upper electrode 30 via the matching box 63. The first high-frequency power supply 61 is an example of a high-frequency power supply unit that applies the first high-frequency power for generating plasma of the processing gas to the lower electrode 14 or the upper electrode 30.

[0041] The plasma processing apparatus 1 may further include a second high-frequency power supply 62. The second high-frequency power supply 62 is configured to generate a second high-frequency power for ion attraction. In other words, the second high-frequency power primarily has a frequency suitable for attracting positive ions to the substrate W. The frequency of the second high-frequency power is, for example, within the range of 400 kHz to 13.56 MHz.

[0042] The second high-frequency power supply 62 is electrically connected to the base station 18 via a matching box 64. The matching box 64 includes a matching circuit configured to match the impedance of the load side of the second high-frequency power supply 62 with the output impedance of the second high-frequency power supply 62.

[0043] The plasma processing apparatus 1 may further include a control unit 80. The control unit 80 may be a computer having a processor, a storage unit such as a memory, an input device, a display device, a signal input / output interface, and the like. The control unit 80 controls the various units of the plasma processing apparatus 1. In the control unit 80, an operator can use the input device to perform operations such as inputting commands to manage the plasma processing apparatus 1. In addition, the control unit 80 can use the display device to visually display the operating status of the plasma processing apparatus 1. In addition, the storage unit of the control unit 80 stores a control program and recipe data. The control program is executed by the processor of the control unit 80 to perform various processes in the plasma processing apparatus 1. The processor of the control unit 80 executes the control program and controls the various units of the plasma processing apparatus 1 according to the recipe data, thereby performing various processes, such as treatment methods, in the plasma processing apparatus 1.

[0044] [Upper electrode structure]

[0045] The upper electrode structure includes an upper electrode 30 and a member 55 disposed around the upper electrode 30. The member 55 disposed around the upper electrode 30 includes an inner member 55a and an outer member 55b located outside the inner member 55a.

[0046] The inner member 55a and the outer member 55b may be annular, may be divided into multiple arcs, or may be stepped. Furthermore, the positions of the inner member 55a and the outer member 55b in the circumferential direction may be any positions as long as they are substantially concentric with the central axis of the upper electrode 30.

[0047] The inner member 55a and the outer member 55b are formed of silicon. However, the material of the inner member 55a and the outer member 55b is not limited to this and may be a semiconductor such as SiC or a conductive member. For example, the material of the inner member 55a and the outer member 55b may be a metal such as aluminum, or another conductive member that can be used within the chamber 10. In this embodiment, the cross-section of the inner member 55a and the outer member 55b is rectangular, but the cross-section may also be tapered.

[0048] The upper electrode 30 and the inner member 55a are electrically insulated by the quartz member 32. Similarly, the inner member 55a and the outer member 55b are electrically insulated by the member 32. The upper electrode 30 and the inner member 55a, and the inner member 55a and the outer member 55b may be electrically insulated by a vacuum space or by an insulating member other than quartz.

[0049] The inner part 55a is fixed to the part 32. The outer part 55b is located radially outward relative to the edge ring 26. In other words, the outer part 55b is located in the area outside the end of the edge ring 26 (see Figure 3 Thus, the outer member 55b and the edge ring 26 do not overlap in a plan view.

[0050] The outer component 55b is capable of moving vertically in response to the consumption of the edge ring 26. Specifically, the component 32 has a through-hole on the outside of the location where the inner component 55a is embedded. The through-hole communicates with a groove formed on the lower surface of the component 32, which is sized to accommodate the outer component 55b. The height of the groove is approximately equal to the thickness of the outer component 55b. However, the height of the groove may be greater than or equal to the thickness of the outer component 55b, or less than or equal to the thickness of the outer component 55b. The support component 56 is connected to the upper surface of the outer component 55b, extends through the through-hole, and protrudes toward the outside of the chamber 10. The support component 56 is connected to a drive unit 57. The drive unit 57 moves the outer component 55b vertically in response to the consumption of the edge ring 26. It should be noted that the drive unit 57 can move at least a portion of the multiple divided outer components 55b vertically in response to the consumption of the edge ring 26.

[0051] The drive unit 57 adjusts the height of the outer member 55b by driving the support member 56 in the vertical direction under the control of the control unit 80. The height (position, movement amount) of the outer member 55b is controlled based on the consumption of the edge ring 26. Correlation between the value corresponding to the consumption of the edge ring 26 and the height of the outer member 55b is measured in advance and stored in a storage unit provided in the control unit 80. The value of this correlation information is set so that the tilted shape is corrected by moving the outer member 55b to an appropriate height based on the consumption of the edge ring 26, and the etched shape formed at the edge area of ​​the substrate is vertical or nearly vertical.

[0052] The control unit 80 controls the driving amount of the driving unit 57 based on pre-stored related information. Thus, the driving unit 57 can move the outer member 55b to an appropriate position in the vertical direction according to the consumption of the edge ring 26.

[0053] The value corresponding to the amount of consumption of edge ring 26 may be the thickness of edge ring 26 consumed compared to its thickness when it was new, the thickness of edge ring 26 itself at that time, or a value indirectly indicating the amount of consumption of edge ring 26. In this embodiment, the application time of high-frequency power (HF) for plasma generation is used as an example to describe the value indirectly indicating the amount of consumption of edge ring 26, but the present invention is not limited to this.

[0054] The edge ring 26 is consumed by exposure to plasma. Plasma is generated by applying high-frequency power HF for plasma generation to the lower electrode 14 and the like. Therefore, the amount of edge ring 26 consumed is proportional to the application time of high-frequency power HF.

[0055] As described above, the application time of the high frequency power HF can be used as a value indirectly indicating the consumption of the edge ring 26. As an example, when the application time of the high frequency power HF is 0 to 200 hours, the outer member 55b is in the initial state, that is, Figure 1 As shown, outer member 55b is controlled so that it is positioned below inner member 55a. Furthermore, outer member 55b can be moved upward when the high-frequency power HF is applied for any time between 200 and 300 hours, and can be moved to its highest position and accommodated in the groove of member 32 when the high-frequency power HF is applied for any time between 300 and 400 hours. However, the application time of the high-frequency power HF is merely an example of the control timing for moving outer member 55b in the vertical direction, and is not limited thereto.

[0056] When plasma is generated, it is affected by the movement of components within the chamber 10. However, the outer member 55b is grounded via the wall of the chamber 10. Therefore, even if the outer member 55b moves vertically, plasma is stably generated without being affected.

[0057] [Outer member height and experimental results]

[0058] Figure 2 1 is a diagram showing an example in which the inclined shape of the hole H formed in the etching target film changes according to the height of the outer member 55 b according to one embodiment. Figure 2 The upper portion of FIG. 1 shows experimental results of etching shapes (inclined shapes) of holes H formed in an edge region of 3 mm in a radial direction from the edge of a substrate by etching using the plasma processing apparatus 1 .

[0059] Figure 2 The lower part shows three modes of upper electrode structure. Figure 2 In the example of , the outer member 55b is fixed to the lower surface of the member 32 and its thickness is changed. In other words, Figure 2 The difference between the upper electrode structures of (a) to (c) is only the height of the outer member 55b. Figure 2 The thickness T of the outer part 55b in (a) is used as a reference. Figure 2 The thickness of the outer part 55b in (b) is set to T+7.5mm. Figure 2 The thickness of the outer member 55b in (c) is set to T+15 mm.

[0060] As a result of the experiment, when Figure 2 When the outer member 55b in (a) has a thickness of T, the "inclination angle θ" indicating the inclination of the side wall of the hole H formed in the etching target film relative to the vertical axis is 0.02 (degrees). Figure 2 When the outer member 55b in (b) has a thickness of T+7.5 mm, the inclination angle θ is 0.49 (degrees). Figure 2 In (c), when outer member 55b has a thickness of T + 15 mm, the inclination angle θ is 1.00 degrees. As described above, the lower the position of the lower surface of outer member 55b, the larger the inclination angle θ. In other words, by controlling outer member 55b to move vertically so that its lower surface is positioned appropriately, it is possible to control inclination angle θ to be zero or close to zero.

[0061] As edge ring 26 is consumed, the sheath on edge ring 26 becomes lower than the sheath on the substrate, causing the ion incidence angle to become tilted at the edge of the substrate. Consequently, the etched shape becomes tilted at the edge of the substrate (creating a tilted shape). Furthermore, as edge ring 26 is consumed, the ion incidence angle becomes more tilted, resulting in a larger tilt angle.

[0062] Based on the above experimental results, by vertically shifting the position of outer member 55b according to the consumption of edge ring 26, the incident angle of the generated ions at the edge region of the substrate can be adjusted to a more vertical angle in response to the consumption of edge ring 26. This demonstrates that the etching profile can be controlled to be vertical or nearly vertical.

[0063] Therefore, according to the experimental results above, the greater the consumption of edge ring 26, the more the outer member 55b moves upward. This can suppress the angle of incidence of ions on the edge region of the substrate from tilting as the consumption of edge ring 26 increases. Consequently, the temporal change in the tilted shape caused by the consumption of edge ring 26 can be suppressed.

[0064] [Handling method]

[0065] Next, refer to Figure 6 An example of a processing method according to one embodiment will be described. Figure 6 1 is a flowchart showing an example of a processing method according to one embodiment. When starting this processing, the control unit 80 controls the outer member 55b to the height of the initial state (step S1). As an example, the outer member 55b is controlled to Figure 3 The height of the initial state is shown. However, Figure 3 The outer member 55b whose height is controlled to the initial state is merely shown as an example, and the invention is not limited thereto.

[0066] Then, in Figure 6 In the process, the control unit 80 determines whether the application time of the high-frequency power HF for plasma generation has reached 200 hours or more (step S2). The control unit 80 does not move the position of the outer member 55b until the application time of the high-frequency power HF reaches 200 hours or more. If it is determined that the application time of the high-frequency power HF is 200 hours or more, the control unit 80 raises the outer member 55b to a predetermined height (step S3).

[0067] As an example, Figure 4 As shown, the outer part 55b is controlled to Figure 3 The initial height of Figure 5 The height between the height of the top position. However, Figure 4The outer member 55 b controlled to a predetermined height is shown as an example only, and the invention is not limited thereto.

[0068] Then, in Figure 6 In the process, the control unit 80 determines whether the application time of the high-frequency power HF reaches 300 hours or more (step S4). The control unit 80 does not move the position of the outer member 55b until the application time of the high-frequency power HF reaches 300 hours or more. And, when it is determined that the application time of the high-frequency power HF is more than 300 hours, the control unit 80 raises the outer member 55b to the height of the uppermost position (step S5), and ends this process. As an example, the outer member 55b is controlled to Figure 5 The height of the uppermost position shown. However, Figure 5 The outer member 55b whose height is controlled to the uppermost position is merely shown as an example, and the present invention is not limited thereto.

[0069] As described above, according to the plasma processing apparatus 1 , the processing method, and the upper electrode structure of the present embodiment, it is possible to suppress temporal changes in the tilted shape generated in the edge region of the substrate.

[0070] However, if Figures 3 to 5 As shown, the height of the outer member 55b is not limited to being controlled in three stages. In other words, the movement of the outer member 55b is merely an example of moving the outer member 55b in the vertical direction according to the consumption of the edge ring 26, and is not limited thereto.

[0071] The plasma processing apparatus, processing method, and upper electrode structure disclosed herein are intended to be illustrative in all respects and not restrictive. The above-described embodiment may be modified and improved in various ways without departing from the scope and spirit of the appended claims. The various embodiments described above may employ other configurations and may be combined without conflict.

[0072] The plasma processing device disclosed in the present invention can be applied to any type of device including atomic layer deposition (ALD) device, capacitively coupled plasma (CCP: Capacitively Coupled Plasma), inductively coupled plasma (ICP: Inductively Coupled Plasma), radial line slot antenna (RLSA: Radial Line Slot Antenna), electron cyclotron resonance plasma (ECR: Electron Cyclotron Resonance Plasma), and helicon wave plasma (HWP: Helicon Wave Plasma).

Claims

1. A plasma processing apparatus, comprising: chamber; a lower electrode for placing a substrate within the chamber; an edge ring disposed around the lower electrode; a member disposed below the supporting member, the supporting member being used to support an upper electrode opposite to the lower electrode in the chamber on an upper portion of the chamber body; a gas supply portion for supplying a processing gas to a processing space between the component and the lower electrode; as well as a high-frequency power supply unit for applying high-frequency power for generating plasma of the processing gas to the lower electrode or the upper electrode; The component includes an inner component formed of a conductive component and an outer component formed of a conductive component and located radially outward of the inner component. The upper electrode is electrically insulated from the inner member. The outer member is electrically insulated from the inner member. The outer member is located radially outward relative to the edge ring, At least a portion of the outer member is movable in a vertical direction according to consumption of the edge ring.

2. The plasma processing apparatus according to claim 1, wherein The outer member and the edge ring do not overlap in plan view.

3. The plasma processing apparatus according to claim 1 or 2, wherein: The more the edge ring is consumed, the more the outer member moves upward.

4. The plasma processing apparatus according to claim 1 or 2, wherein: The inner member is fixed.

5. The plasma processing apparatus according to claim 1 or 2, wherein: The outer member is grounded.

6. A processing method in a plasma processing device, the plasma processing device comprising: chamber; a lower electrode for placing a substrate within the chamber; an edge ring disposed around the lower electrode; a member disposed below the supporting member, the supporting member being used to support an upper electrode opposite to the lower electrode in the chamber on an upper portion of the chamber body; a gas supply portion for supplying a processing gas to a processing space between the component and the lower electrode; as well as a high-frequency power supply unit for applying high-frequency power for generating plasma of the processing gas to the lower electrode or the upper electrode; The component includes an inner component formed of a conductive component and an outer component formed of a conductive component and located radially outward of the inner component. The upper electrode is electrically insulated from the inner member. The outer member is electrically insulated from the inner member. The outer member is located radially outward relative to the edge ring, At least a portion of the outer member is movable in the vertical direction according to the consumption of the edge ring. The processing method comprises: and moving at least a portion of the outer member in a vertical direction according to a value corresponding to consumption of the edge ring.

7. The processing method according to claim 6, wherein: The value corresponding to consumption of the edge ring is application time of the high-frequency power.

8. An upper electrode structure comprising: an upper electrode, and a member disposed below a support member for supporting the upper electrode on an upper portion of the chamber body, The component includes an inner component formed of a conductive component and an outer component formed of a conductive component and located radially outward of the inner component. The upper electrode is electrically insulated from the inner member. The outer member is electrically insulated from the inner member. The outer member is located radially outward relative to an edge ring disposed around a lower electrode opposite to the upper electrode, At least a portion of the outer member is movable in a vertical direction according to consumption of the edge ring.

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