Patterned shielding structure

Abstract

A patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer and a first stacking structure. The shielding layer extends along a plane. The first stacking structure is stacked on the shielding layer in a first direction. The first direction is perpendicular to the plane. The stacking structure is used to enhance the shielding effect and is in a cross shape.

Description

Technical Field

[0001] The embodiments described in the present disclosure relate to a semiconductor technology, and more particularly to a patterned shielding structure applied to an integrated inductor. Background Art

[0002] With the development of integrated circuit technology, the size of electronic components in integrated circuits is getting smaller and smaller. However, when the size of electronic components is getting smaller and smaller, there may be many negative effects. For example, when the inductor is running, the eddy current generated by the substrate will affect the quality factor value (Q value) of the inductor.

[0003] It can be seen that the existing method still has inconveniences and defects and needs to be improved. In order to solve the above problems, relevant fields have spared no effort to seek solutions, but no appropriate solutions have been developed for a long time. Summary of the invention

[0004] One embodiment of the present disclosure relates to a patterned shielding structure. The patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer and a first stacking structure. The shielding layer extends along a plane. The first stacking structure is stacked on the shielding layer in a first direction. The first direction is perpendicular to the plane. The stacking structure is used to enhance the shielding effect and is in a cross shape.

[0005] One embodiment of the present disclosure relates to a patterned shielding structure. The patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer and a stacking structure. The shielding layer includes a main body and a plurality of branch bodies. The stacking structure is disposed on the main body. The stacking structure is used to enhance the shielding effect.

[0006] In summary, by disposing the stacked structure on the shielding layer, the shielding effect of the patterned shielding structure can be enhanced. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to make the above and other purposes, features, advantages and embodiments of the present disclosure more clearly understood, the accompanying drawings are described as follows:

[0008] Figure 1 is a schematic diagram of a substrate, a patterned shielding structure and an inductor structure according to some embodiments of the present disclosure;

[0009] Figure 2 is a schematic diagram of an inductor structure according to some embodiments of the present disclosure;

[0010] Figure 3 is a schematic diagram of a patterned shielding structure according to some embodiments of the present disclosure;

[0011] Figure 4 It corresponds to Figure 3 A cross-sectional view of the section line;

[0012] Figure 5 is a schematic diagram of a patterned shielding structure according to some embodiments of the present disclosure;

[0013] Figure 6 is a schematic diagram of a patterned shielding structure according to some embodiments of the present disclosure;

[0014] Figure 7 It corresponds to Figure 6 A cross-sectional view of the section line;

[0015] Figure 8 is a schematic diagram of a patterned shielding structure according to some embodiments of the present disclosure; and

[0016] Fig. 9 is a schematic diagram of a patterned shielding structure according to some embodiments of the present disclosure.

[0017] Explanation of symbols

[0018] 120: Substrate

[0019] 140, 140A: Inductor structure

[0020] 160, 160A, 160B, 160C, 160D, 160E: Patterned shielding structure

[0021] 162: Shielding layer

[0022] 1621: Main cadre

[0023] 1622: Branch cadres

[0024] 164A, 164B, 164C, 164D: Stacked structure

[0025] 1641: Part I

[0026] 1642: Part 2

[0027] 1643: Part 3

[0028] 1644: Part 4

[0029] S1, S2: Segment

[0030] O: Open

[0031] IN: Input terminal

[0032] X, Y, Z, K, L: Direction

[0033] FF, GG: hatching

[0034] M1, M2, M3, M4, M5, M6: Metal layer

[0035] V1, V2: Connect through holes

[0036] D1, D2, D3, D4, D5, D6: Length DETAILED DESCRIPTION

[0037] The following is a detailed description of the embodiments with accompanying drawings, but the embodiments provided are not intended to limit the scope of the present disclosure, and the description of the structure operation is not intended to limit the order of its execution. Any device with equal technical effects produced by the re-combination of components is within the scope of the present disclosure. In addition, the drawings are for illustrative purposes only and are not drawn in their original size. For ease of understanding, the same or similar components in the following description will be indicated by the same symbols.

[0038] Please refer to Figure 1 as well as Figure 2 . Figure 1 1 is a schematic diagram of a substrate 120, an inductor structure 140, and a patterned shielding structure 160 according to some embodiments of the present disclosure. Figure 1 As shown, the substrate 120 , the inductor structure 140 , and the patterned shielding structure 160 are disposed on a plane formed by a direction X and a direction Y. The direction X is perpendicular to the direction Y.

[0039] Please refer to Figure 1 as well as Figure 2 . Figure 2 is a schematic diagram of an inductor structure 140A according to some embodiments of the present disclosure. In some embodiments, Figure 2 The inductor structure 140A is used to achieve Figure 1 The inductor structure 140 is shown, but the present disclosure is not limited thereto. Figure 2 As shown, the inductor structure 140 is spiral-shaped. An opening O is formed in the inductor structure 140. The two sides of the opening O are metal segments S1 and metal segments S2 respectively. In the related art, if a patterned shielding structure is not provided between the substrate 120 and the inductor structure 140, the magnetic field generated when the inductor structure 140 is in operation will cause eddy currents to be generated on the substrate 120. The eddy currents will affect the quality factor value (Q value) of the inductor structure 140.

[0040] However, in Figure 1In the embodiment, a patterned shielding structure 160 is disposed between the substrate 120 and the inductor structure 140. The patterned shielding structure 160 is grounded. The patterned shielding structure 160 can reduce the mutual inductance between the metal segment S1 and the metal segment S2 of the inductor structure 140 to prevent the substrate 120 from generating the above-mentioned eddy current, thereby effectively maintaining the quality factor value (Q value) of the inductor structure 140.

[0041] The above-mentioned shapes or configurations of the inductor structure 140A are merely examples, and various shapes or configurations of the inductor structure 140A are within the scope of the present disclosure.

[0042] Please refer to Figure 3 . Figure 3 is a schematic diagram of a patterned shielding structure 160A according to some embodiments of the present disclosure. In some embodiments, Figure 3 The patterned shielding structure 160A is used to achieve Figure 1 The patterned shielding structure 160 is provided, but the present disclosure is not limited thereto. Figure 3 As shown, the patterned shielding structure 160A includes a shielding layer 162 and a stacking structure 164A. The shielding layer 162 extends along a plane formed by the direction X and the direction Y. The shielding layer 162 includes a main body 1621 and a plurality of branch bodies 1622. The branch bodies 1622 are connected to the main body 1621. Figure 3 As shown, the shielding layer 162 is radial and the stacking structure 164A is cross-shaped. The stacking structure 164A is stacked on the main body 1621 of the shielding layer 162 in the direction Z. The direction Z is perpendicular to the plane formed by the direction X and the direction Y. In some other embodiments, the stacking structure 164A can be stacked toward the bottom of the shielding layer 162. In addition, as Figure 3 As shown, the width of the stacked structure 164A is slightly greater than the width of the trunk portion 1621 .

[0043] The above-mentioned shape or configuration of the shielding layer 162 is only an example. Various shapes or configurations of the shielding layer 162 are all within the scope of the present disclosure.

[0044] By disposing the stacked structure 164A at a position corresponding to the opening O, the stacked structure 164A can effectively reduce the mutual inductance between the metal segment S1 and the metal segment S2 of the inductor structure 140 to avoid the generation of the above-mentioned eddy current. In this way, the shielding effect of the patterned shielding structure 160A can be enhanced, thereby effectively maintaining the quality factor value (Q value) of the inductor structure 140.

[0045] Please refer to Figure 4 . Figure 4 It corresponds to Figure 3 The cross-sectional view of the section line FF. Figure 4As shown, the shielding layer 162 is disposed on the metal layer M1. The stacked structure 164A includes a plurality of metal structures. The metal structures are respectively disposed on the metal layers M2, M3, M4, M5 and M6 and the metal structures have the same shape. In some embodiments, the stacked structure 164A may include only two layers of metal structures. In some other embodiments, the stacked structure 164A preferably includes more than six layers of metal structures.

[0046] There is at least one connecting via V1 between any two adjacent metal structures. The connecting via V1 connects the two adjacent metal structures. For example, the connecting via V1 connects the metal layer M6 and the metal layer M5, the connecting via V1 connects the metal layer M5 and the metal layer M4, and so on. The inductor structure 140 is disposed on the metal layer M6. For example, the inductor structure 140 can be disposed on the metal layer (M7) (not shown) and the metal layer (M8) (not shown).

[0047] Please refer again Figure 3 Each metal structure of the stacked structure 164A includes a first portion 1641 and a second portion 1642. The first portion 1641 extends along a direction X. The second portion 1642 extends along a direction Y. In other words, the first portion 1641 and the second portion 1642 are arranged crosswise. In addition, the length D2 of the first portion 1641 and the length D1 of the second portion 1642 are both shorter than the side length D3 of the shielding layer 162.

[0048] Please also refer to Figure 2 as well as Figure 3 .like Figure 2 As shown, the inductor structure 140A includes an input terminal IN. Figure 3 The vertical projection of the stacked structure 164A on the plane formed by the direction X and the direction Y at least partially overlaps with the vertical projection of the input terminal IN on the plane. For example, Figure 3 The second portion 1642 of the stacked structure 164A extends to Figure 2 In this way, a better shielding effect can be achieved.

[0049] Please refer to Figure 5 . Figure 5 is a schematic diagram of a patterned shielding structure 160B according to some embodiments of the present disclosure. Figure 5 The patterned shielding structure 160B and Figure 3 The difference between the patterned shielding structure 160A is that Figure 5 In the patterned shielding structure 160B, the length D2 of the first portion 1641 of the stacked structure 164B and the length D1 of the second portion 1642 of the stacked structure 164B are equal to the side length D3 of the shielding layer 162 .

[0050] Please refer to Figure 6 . Figure 6 is a schematic diagram of a patterned shielding structure 160C according to some embodiments of the present disclosure. Figure 6 The patterned shielding structure 160C and Figure 3 The difference between the patterned shielding structure 160A is that Figure 6 The stacked structure 164C of the patterned shielding structure 160C includes a plurality of metal structures. Each metal structure includes a third portion 1643 and a fourth portion 1644. The third portion 1643 and the fourth portion 1644 are arranged crosswise. The third portion 1643 extends along a direction K and the direction K is perpendicular to the direction Z. The fourth portion 1644 extends along a direction L and the direction L is perpendicular to the direction Z. The direction K is perpendicular to the direction L. Figure 5 As shown, the directions K, L, X, and Y are different from each other. In addition, the length D4 of the third portion 1643 and the length D5 of the fourth portion 1644 are both shorter than the diagonal length D6 of the shielding layer 162 .

[0051] Please refer to Figure 7 . Figure 7 It corresponds to Figure 6 The cross-sectional view of the section line GG. Figure 7 As shown, the shielding layer 162 is disposed on the metal layer M1. The stacked structure 164C includes a plurality of metal structures. These metal structures are respectively disposed on the metal layers M2, M3, M4, M5 and M6 and these metal structures have the same shape. There is at least one connecting via V2 between any two adjacent metal structures. The connecting via V2 connects the two adjacent metal structures. For example, the connecting via V2 connects the metal layer M6 and the metal layer M5, the connecting via V2 connects the metal layer M5 and the metal layer M4, and so on. The inductor structure 140 is disposed on the metal layer M6. For example, the inductor structure 140 is disposed on the metal layer (M7) (not shown) and the metal layer (M8) (not shown).

[0052] Please refer to Figure 8 . Figure 8 is a schematic diagram of a patterned shielding structure 160D according to some embodiments of the present disclosure. Figure 8 The patterned shielding structure 160D and Figure 6 The difference between the patterned shielding structure 160C is that Figure 8 In the patterned shielding structure 160D, the length D4 of the third portion 1643 and the length D5 of the fourth portion 1644 of the stacked structure 164D are equal to the diagonal length D6 of the shielding layer 162 .

[0053] Please refer to Fig. 9 . Fig. 9is a schematic diagram of a patterned shielding structure 160E according to some embodiments of the present disclosure. Fig. 9 The shielding layer 162 of the patterned shielding structure 160E is provided with Figure 3 The stacked structure 164A and Figure 6 The stacking structure 164A and the stacking structure 164C are described in the above paragraphs, so they are not repeated here.

[0054] In some embodiments, Figure 2 The inductor structure 140 is applied to a single-end signal. In these embodiments, the stacked structure 164A, 164B, 164C or 164D enables the patterned shielding structure 160A, 160B, 160C, 160D or 160E to have a better blocking effect. In this way, the quality factor value (Q value) of the inductor structure 140 can be maintained or even improved.

[0055] In some other embodiments, Figure 2 The inductor structure 140 is applied to differential signals. In these embodiments, due to the impedance change, the transmission loss between the two inductor structures is reduced.

[0056] In summary, by disposing the stacked structure on the shielding layer, the shielding effect of the patterned shielding structure can be enhanced.

[0057] Although the present disclosure has been disclosed in the above embodiments, it is not intended to limit the present disclosure. Any ordinary technician in the field can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on what is defined in the claims.

Claims

1. A patterned shielding structure disposed between an inductor structure and a substrate, the patterned shielding structure comprising: a shielding layer extending along a plane; and A first stacking structure is stacked on the shielding layer in a first direction, the first direction is perpendicular to the plane, the first stacking structure is cross-shaped and is used to enhance the shielding effect, wherein the first stacking structure includes multiple first metal structures, and the multiple first metal structures are respectively arranged in multiple metal layers that are in different planes and spaced apart from each other. 2 . The patterned shielding structure as claimed in claim 1 , wherein a length of the first stacked structure is shorter than a side length of the shielding layer. 3 . The patterned shielding structure as claimed in claim 1 , wherein the shielding layer is disposed on a first metal layer, and the plurality of first metal structures are respectively disposed on a second metal layer, a third metal layer, a fourth metal layer, a fifth metal layer and a sixth metal layer. 4 . The patterned shielding structure as claimed in claim 3 , wherein at least one connecting through hole is disposed between any two adjacent ones of the plurality of first metal structures, and the connecting through hole connects the two adjacent ones.

5. A patterned shielding structure as described in claim 3, wherein the plurality of first metal structures each include a first portion and a second portion, and the first portion and the second portion are cross-arranged, wherein the first portion extends along a second direction, and the second portion extends along a third direction, wherein the second direction is perpendicular to the third direction, and wherein the second direction or the third direction is perpendicular to the first direction.

6. The patterned shielding structure of claim 5, further comprising: a second stacked structure, comprising a plurality of second metal structures, wherein the plurality of second metal structures are respectively disposed on at least a portion of the plurality of metal layers, The plurality of second metal structures each include a third portion and a fourth portion, and the third portion and the fourth portion are arranged crosswise. 7 . The patterned shielding structure as claimed in claim 6 , wherein a length of the second stacked structure is shorter than a diagonal length of the shielding layer.

8. The patterned shielding structure as claimed in claim 6, wherein the third portion extends along a fourth direction, the fourth portion extends along a fifth direction, and the fourth direction is perpendicular to the fifth direction, wherein the second direction, the third direction, the fourth direction and the fifth direction are different from each other. 9 . The patterned shielding structure as claimed in claim 1 , wherein the inductor structure comprises an input end, and a vertical projection of the first stacked structure on the plane at least partially overlaps with a vertical projection of the input end on the plane.

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