Chip transfer method and equipment

Abstract

The present invention provides a chip transfer method and a chip transfer apparatus using the method. The method comprises: preparing a transfer substrate having a plurality of chips disposed thereon on a substrate to be transferred; emitting a line beam; shaping the line beam into a plurality of patterned beams using a mask disposed along the path of the line beam; separating the plurality of chips from the transfer substrate by irradiating the patterned beams onto the transfer substrate; and placing the plurality of chips separated from the transfer substrate onto the substrate to be transferred. The chip transfer method and apparatus can transfer the plurality of chips to predetermined positions on the substrate to be transferred by using a mask having a pattern.

Description

Technical Field

[0001] The present disclosure relates to a chip transfer method and a chip transfer device, and more particularly, to a chip transfer method and a chip transfer device capable of transferring a plurality of chips to preset positions on a substrate to be transferred by using a mask having a pattern. Background Art

[0002] Micro-light-emitting diode (micro-LED) displays are displays in which all pixels that make up the screen are formed by micro-LED chips. Micro-LED displays have been researched and developed as a next-generation display device. They consume less power than liquid crystal display (LCD) devices, have excellent durability, high emission efficiency, and flexibility, and are advantageous in terms of large-scale, lightweight, and miniaturization.

[0003] The manufacturing process of micro LED display devices includes an EPI process, a chip process, a transfer process, and a bonding process. For example, the transfer process described above is a process of forming pixels by transferring multiple micro LED chips onto a substrate on which various lines and thin film transistors are formed.

[0004] For example, a transfer substrate is prepared on a wafer on which micro LED chips are fabricated, and the micro LED chips are then attached to the transfer substrate and separated from the wafer. Thereafter, the transfer substrate is placed over a transferred substrate on which various lines and thin film transistors are formed, and the micro LED chips are separated from the transfer substrate and transferred to a predetermined position on the transferred substrate.

[0005] Micro LED chips have an extremely small size of 100 micrometers or less and are therefore difficult to handle. Therefore, the transfer of micro LED chips in individual chip units (eg, one unit) from a transfer substrate to a transferred substrate is extremely difficult.

[0006] The background art of the present disclosure is disclosed in the following patent documents.

[0007] [Prior Art Document]

[0008] [Patent Document]

[0009] (Patent Document 1) KR10-2019-0072196A Summary of the Invention

[0010] The present disclosure provides a chip transfer device and a chip transfer method, which can transfer a plurality of chips to predetermined positions on a transferred substrate at one time by using a mask having a pattern.

[0011] According to an exemplary embodiment, a chip transfer method includes: preparing a transfer substrate having a plurality of chips arranged thereon on a substrate to be transferred (hereinafter referred to as a transferred substrate); emitting a line beam; shaping a plurality of pattern beams from the line beam by using a mask arranged on a path of the line beam; separating the plurality of chips from the transfer substrate by irradiating the pattern beams to the transfer substrate; and placing the plurality of chips separated from the transfer substrate on the transferred substrate.

[0012] In an exemplary embodiment, the separation of the plurality of chips may include irradiating a plurality of patterned light beams to the plurality of chips to be separated from the transfer substrate in a respectively corresponding manner.

[0013] In an exemplary embodiment, the chip transfer method may further include replacing the pattern by changing the position of the mask so that the line beam is shaped into a patterned beam by transmitting the line beam through a pattern having a size corresponding to each of the plurality of chips among a plurality of patterns formed in the mask.

[0014] In an exemplary embodiment, the chip transfer method may further include: shaping a marking beam from the line beam by using a mask arranged on a path of the line beam; generating a marking beam image by irradiating the marking beam onto a transfer substrate and photographing the marking beam on the transfer substrate; and initially aligning the position of the mask relative to the transfer substrate by using the marking beam image.

[0015] In an exemplary embodiment, the shaping of the pattern beam and the shaping of the marking beam can be performed simultaneously by using the same line beam. Here, the marking beam can be shaped from a portion of the line beam, and the pattern beam can be shaped from the remaining portion of the line beam.

[0016] In an exemplary embodiment, the chip transfer method may further include: irradiating a patterned beam onto a transfer substrate and generating a patterned beam image by photographing the patterned beam transmitted through the transfer substrate; and secondarily aligning the tilt and distance of the mask relative to the transfer substrate by using the patterned beam image, so as to focus the patterned beam transmitted through the mask and irradiated onto the transfer substrate.

[0017] In an exemplary embodiment, the shaping of the marking beam may include forming a pair of marking beams at both sides of the pattern beam by transmitting the line beam through a pair of alignment marks among a plurality of alignment marks formed at each side of the plurality of patterns, wherein the pair of alignment marks are formed at both sides of a pattern having a size corresponding to the plurality of chips.

[0018] In an exemplary embodiment, generating a marking beam image may include: photographing a pair of alignment marks on a transfer substrate formed by a pair of marking beams irradiated onto the transfer substrate from top to bottom; and inserting a reference mark into the image, wherein the image is obtained by photographing the alignment mark with reference to the coordinates of the reference mark displayed on the transfer substrate corresponding to the marking beams.

[0019] In an exemplary embodiment, the initial alignment may include: calculating the offset of the alignment mark relative to the reference mark from the marking beam image; and adjusting the position and tilt of the mask in a direction intersecting the direction of travel of the line beam by an amount equal to the offset so that the alignment mark is consistent with the reference mark.

[0020] In an exemplary embodiment, the generating of the patterned beams may include capturing focused images of the plurality of patterned beams while scanning the transfer substrate along an arrangement direction of the plurality of patterned beams transmitted through the transfer substrate from top to bottom.

[0021] In an exemplary embodiment, the secondary alignment may include: collecting characteristics of the patterned light beam from the focused image and comparing the collected characteristics with reference characteristics; and adjusting the position and tilt of the mask in the direction of travel of the line beam so that the collected characteristics are consistent with the reference characteristics.

[0022] According to another exemplary embodiment, a chip transfer apparatus for transferring a plurality of chips from a transfer substrate to a transferred substrate includes: a mask having a pattern for shaping a line beam into a plurality of pattern beams to be irradiated onto the transfer substrate; a mask support configured to movably and rotatably support the mask; and a laser source unit configured to emit the line beam toward the mask so as to transfer the plurality of chips.

[0023] In example embodiments, a plurality of different patterns may be formed in the mask, and one of the plurality of patterns may have a size corresponding to each of the plurality of chips.

[0024] In an exemplary embodiment, the chip transfer apparatus may further include a pattern replacement unit configured to change a position of the mask by controlling the mask support so that the line beam is transmitted through a pattern having a size corresponding to the plurality of chips attached to the transfer substrate among the plurality of patterns.

[0025] In an exemplary embodiment, each of the plurality of patterns may include a plurality of patterned holes. Here, the patterned holes arranged on the same line in the width direction of the line beam may have the same shape, size, and arrangement, and the patterned holes arranged in a direction intersecting the width direction of the line beam may have different shapes, sizes, and arrangements.

[0026] In an exemplary embodiment, a plurality of alignment marks may be formed at both sides of a plurality of patterns in a width direction of a linear beam; the plurality of alignment marks may be arranged on the same line with the plurality of patterns in the width direction of the linear beam, respectively; and a plurality of pattern beams transmitted through patterns having a size corresponding to that of a plurality of micro LED chips and a pair of mark beams transmitted through a pair of alignment marks arranged on both sides of a pattern having a size corresponding to that of a plurality of micro LED chips may be simultaneously irradiated onto a transfer substrate.

[0027] In an exemplary embodiment, the chip transfer device may further include: a first alignment monitoring unit configured to generate a marker beam image by photographing the marker beam irradiated to the transfer substrate; and a first alignment adjustment unit configured to change the position and inclination of the mask in a direction intersecting the traveling direction of the line beam by controlling the mask support to be consistent with a reference mark displayed on the transfer substrate, so that a pair of alignment marks formed in the transfer substrate by a pair of marker beams irradiated to the transfer substrate from top to bottom corresponds to the marker beam.

[0028] In an exemplary embodiment, the chip transfer apparatus may further include: a second alignment monitoring unit configured to generate a marking beam image by capturing a focused image of the patterned light beam transmitted through the transfer substrate; and a second alignment adjustment unit configured to change the position and inclination of the mask in a direction intersecting the traveling direction of the line beam by controlling the mask support so that characteristics of the patterned light beam are consistent with reference characteristics, which are collected from focused images of multiple patterned light beams transmitted from top to bottom through the transfer substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic diagram illustrating a chip transfer apparatus according to an exemplary embodiment.

[0030] Figure 2 is a schematic diagram illustrating a mask having a plurality of patterns formed therein according to an exemplary embodiment.

[0031] Figures 3 to 7 is a flowchart of a chip transfer process by using a chip transfer method and a chip transfer apparatus according to an exemplary embodiment.

[0032] Figure 8 is a flowchart of a chip transfer method according to an exemplary embodiment.

[0033] Explanation of Figure Numbers

[0034] 1: Micro LED chip;

[0035] 10: mask;

[0036] 20: mask support;

[0037] 30: laser source unit;

[0038] 40: reflector unit;

[0039] 50: pattern replacement unit;

[0040] 60: first alignment monitoring unit;

[0041] 70: first alignment adjustment unit;

[0042] 80: second alignment monitoring unit;

[0043] 90: second alignment adjustment unit;

[0044] L: Line beam;

[0045] L': patterned beam;

[0046] LM: marker beam;

[0047] M: alignment mark;

[0048] M1: first alignment mark;

[0049] M2: second alignment mark;

[0050] M3: third alignment mark;

[0051] M4: fourth alignment mark;

[0052] M5: fifth alignment mark;

[0053] P: pattern;

[0054] P1: first row pattern;

[0055] P2: second row pattern;

[0056] P3: third row pattern;

[0057] P4: fourth row pattern;

[0058] P5: fifth row pattern;

[0059] r, r1, r2, r3, r4, r5: row;

[0060] S: substrate;

[0061] S': transfer substrate;

[0062] S100, S200, S300, S410, S420, S430, S510, S520, S530, S600: steps;

[0063] X: left and right direction;

[0064] Y: vertical direction;

[0065] Z: front-back direction;

[0066] Δx, Δy, Δθ: offset;

[0067] ΔZ1, ΔZ2, ΔZ3, ΔZ4: distance. DETAILED DESCRIPTION

[0068] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention may be embodied in various forms and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the present invention to those skilled in the art. In the accompanying drawings, the dimensions of layers and regions are exaggerated for clarity. Throughout, like reference numerals refer to like elements.

[0069] A chip transfer method and a chip transfer apparatus according to exemplary embodiments exhibit technical features of transferring a plurality of chips at a time to arrangement positions on a substrate to be transferred by using a mask having a pattern.

[0070] In addition, the chip transfer method and the chip transfer apparatus according to the exemplary embodiment exhibit technical features of transferring a plurality of chips having different sizes onto a substrate by using a mask having a plurality of patterns.

[0071] The chip transfer method and the chip transfer apparatus according to exemplary embodiments may be used in a process of transferring a micro LED chip by using a laser beam.

[0072] In addition, the chip transfer method and the chip transfer apparatus according to example embodiments may be used in various processes of transferring various electronic devices from a sacrificial substrate to a target substrate by using a laser beam.

[0073] Hereinafter, a chip transfer method and a chip transfer apparatus according to exemplary embodiments will be described in detail with reference to a micro LED chip transfer process.

[0074] Figure 1 is a schematic diagram illustrating a chip transfer apparatus according to an exemplary embodiment, and Figure 2 is a schematic diagram illustrating a mask having a plurality of patterns formed therein according to an exemplary embodiment. Figures 3 to 7 is a flowchart of a micro LED chip transfer process by using a chip transfer method and a chip transfer apparatus according to an exemplary embodiment.

[0075] See Figures 1 to 7 , a chip transfer apparatus according to an exemplary embodiment is described. Here, the chip transfer apparatus may be referred to as a micro LED chip transfer apparatus.

[0076] A chip transfer apparatus according to an exemplary embodiment transfers multiple chips (e.g., multiple micro LED chips 1) from a transfer substrate S' to a substrate to be transferred (hereinafter referred to as a transferred substrate). The chip transfer apparatus includes: a mask 10 having a pattern P for shaping a line beam L into a patterned beam L' and irradiating the patterned beam L' onto the transfer substrate S'; a mask support 20 that supports the mask 10 so that it can move and rotate; and a laser light source unit 30 that emits the line beam L toward the mask 10 to transfer the multiple micro LED chips 1. Furthermore, the chip transfer apparatus may include a reflector unit 40 that reflects the multiple patterned beams L', which are shaped while passing through the mask 10, onto the transfer substrate S'.

[0077] Here, multiple patterns P of different sizes may be formed in the mask 10. More specifically, multiple patterns P of different shapes, sizes, and arrangements may be formed in the mask 10. Furthermore, one of the multiple patterns P may have a size corresponding to each of the multiple micro LED chips 1. Here, the feature of corresponding size means that the size of one micro LED chip 1 is consistent with the size of one patterned beam L' within a predetermined tolerance value. Here, within the predetermined tolerance value, the size of one patterned beam may be larger than the size of one micro LED chip 1. Here, the tolerance value may be referred to as a tolerance or allowance.

[0078] In addition, one of the plurality of patterns P may have a shape and arrangement consistent with each of the plurality of micro LED chips 1 .

[0079] In addition, the chip transfer apparatus may further include a pattern replacement unit 50 that changes the position of the mask 10 by controlling the mask support 20 so that the line beam L passes through a pattern among the plurality of patterns P having a size corresponding to the plurality of micro LED chips 1 attached to the transfer substrate S'.

[0080] The chip may be the micro LED chip 1 . Alternatively, the chip may include various electronic device chips other than the micro LED chip 1 .

[0081] The micro LED chip 1 can be manufactured by growing a thin film made of inorganic materials such as Al, Ga, N, P, As, and In on a sapphire or silicon substrate. The micro LED chip 1 can have a size of, for example, 10 to 100 microns. The micro LED chip 1 can include blue, green, and red micro LED chips. The fully manufactured micro LED chip 1 can be separated from the sapphire or silicon substrate and then attached to a transfer substrate S'. Alternatively, the micro LED chip 1 can be directly manufactured by growing a thin film made of inorganic materials such as Al, Ga, N, P, As, and In on a transfer substrate S'.

[0082] The transfer substrate S' may be a wafer on which a plurality of micro LED chips 1 are arranged in an array and attached. Alternatively, the plurality of micro LED chips 1 may be directly grown on the transfer substrate S'. The transfer substrate S' may be referred to as a temporary substrate.

[0083] Hereinafter, for the convenience of description, the transferred substrate may be referred to as substrate S for short.

[0084] Substrate S can be glass. Various lines and thin-film transistors can be formed on substrate S. Blue, green, and red micro-LED chips can be transferred from transfer substrate S' to pixel areas of substrate S using chip transfer equipment. Alternatively, substrate S can be made of different types and materials. Furthermore, substrate S can be referred to as a target substrate. Substrate S and each of the various lines and thin-film transistors formed on substrate S can be made of, for example, a transparent material.

[0085] The transfer substrate S' may be supported by a first stage (not shown), and the substrate S may be supported by a second stage (not shown). The first and second stages may be housed in a chamber (not shown) and face each other in a vertical direction Y.

[0086] The first platform may have, for example, a rectangular plate shape or a circular plate shape and include an opening defined at its central portion. The area of the first platform may be larger than that of the transfer substrate S', and the area of the opening may be smaller than that of the transfer substrate S'.

[0087] An absorber (not shown) may be disposed below the first platform. The absorbers may be arranged around the perimeter of the opening. The transfer substrate S' may be attached to the bottom of the first platform via the absorber and supported by the first platform. A portion of the top surface of the transfer substrate S' may be exposed to the outside through the opening. The patterned light beam L' may pass through the opening and irradiate the transfer substrate S'. The first platform may have various shapes and various methods for supporting the transfer substrate S'.

[0088] The second platform may be positioned below the first platform. The second platform may support a substrate S. The second platform may have, for example, a rectangular plate shape. The substrate S may be placed on and supported by the top surface of the second platform. The area of the top surface of the second platform may be larger than that of the substrate S. The second platform may have various structures and shapes.

[0089] Since the transfer substrate S′ is seated on the first stage and the substrate S is seated on the second stage, the transfer substrate S′ and the substrate S may face each other in a vertical direction.

[0090] The chip transfer apparatus may further include first and second drive units (not shown). The first and second platforms can be independently moved and rotated by the first and second drive units. Thus, the transfer substrate S' and the substrate S can be aligned with each other in the vertical direction Y by independently moving the first and second platforms using the first and second drive units.

[0091] The first drive unit can move the first platform in the front-to-back direction Z, the left-to-right direction X, and the vertical direction Y, and rotate the first platform relative to the vertical direction Y. Furthermore, the second drive unit can move the second platform in the front-to-back direction Z, the left-to-right direction X, and the vertical direction Y, and rotate the second platform relative to the vertical direction Y. To this end, the first and second drive units can have various configurations and methods.

[0092] The mask 10 may be supported by the mask support 20 and disposed between the reflective mirror unit 40 and the laser light source unit 30. Therefore, the mask 10 may transmit the line beam L traveling from the laser light source unit 30 to the reflective mirror unit 40 via the pattern P defined in the mask 10 and shape the line beam L into the shape of the pattern P. The patterned beam L' shaped into the shape of the pattern P may be reflected by the reflective mirror unit 40 and irradiated onto the transfer substrate S'.

[0093] The mask 10 may have a plate shape. A pattern P may be formed in the mask 10. The pattern P may include a plurality of pattern holes. The plurality of pattern holes may be arranged in a row in the width direction of the linear beam L, and the linear beam L may be transmitted through the plurality of pattern holes to form the shape of the pattern P.

[0094] Alternatively, a plurality of patterns P may be formed in the mask 10. The line beam L is transmitted through the plurality of patterns P to be shaped into a pattern shape. The plurality of patterns P may be arranged in the vertical direction Y.

[0095] The plurality of patterns P may be referred to as a plurality of row r patterns P. Here, the plurality of rows r may include, for example, a first row r1, a second row r2, a third row r3, a fourth row r4, and a fifth row r5. The plurality of patterns P may be formed along each row and include a first row pattern P1, a second row pattern P2, a third row pattern P3, a fourth row pattern P4, and a fifth row pattern P5. Alternatively, the number of the plurality of rows may be set differently.

[0096] Each of the plurality of patterns P may include a plurality of pattern holes. A plurality of pattern holes arranged on the same line in the left-right direction X may form one row to form one pattern P.

[0097] The plurality of patterned holes can allow the line beam L to be transmitted therethrough and shaped into the shape of the patterned holes. That is, the portion of the line beam L that reaches the mask 10 can pass through the plurality of patterned holes and be shaped into the patterned beam L', and the remaining portion of the line beam L may not pass through the mask 10. Therefore, the patterned beam L' that has passed through the plurality of patterned holes can be irradiated onto the transfer substrate S' in the same pattern shape as the plurality of patterned holes.

[0098] Multiple patterned holes arranged on the same line in the width direction of the linear beam L (e.g., the left-right direction X) forming a pattern P can have the same shape, size, and arrangement. That is, the patterned holes forming the same row r can have the same shape, size, and arrangement. Here, arrangement refers to the left and right gaps between the patterned holes. As described above, patterned holes having the same shape, size, and arrangement in the left-right direction X can be arranged to form a line.

[0099] Furthermore, the patterned holes arranged in a direction intersecting the width direction of the line beam L (e.g., in the vertical direction Y) may have different shapes, sizes, and arrangements. That is, when the rows r are different, at least one of the shapes, sizes, and arrangements of the patterned holes may be different. For example, patterned holes having different shapes, sizes, or arrangements may be arranged in the vertical direction Y.

[0100] That is, at least one of the shapes, sizes, and arrangements of the patterned holes in the first row of patterns P1 formed along the first row r1 and the patterned holes in the second row of patterns P2 formed along the second row r2 differs. Similarly, at least one of the shapes, sizes, and arrangements of the patterned holes in the first row of patterns P1 and the patterned holes in the third row of patterns P3 differs. In other words, at least one of the shapes, sizes, and arrangements of the patterned holes in the patterns formed along each row r differs. Therefore, the mask 10 can shape as many patterned light beams L' as there are patterns P. In other words, the shape, size, and arrangement of the patterned light beams L' irradiated onto the transfer substrate S' can be determined by the shape, size, and arrangement of the patterns P transmitted through the line beam L.

[0101] A plurality of alignment marks M may be formed on each of both sides of the plurality of patterns P in the width direction of the linear beam L. For example, the plurality of alignment marks M may include a first alignment mark M1, a second alignment mark M2, a third alignment mark M3, a fourth alignment mark M4, and a fifth alignment mark M5. The alignment marks may be arranged on the same line as the plurality of patterns P in the width direction of the linear beam.

[0102] For example, the alignment marks and patterns arranged in the first row may be arranged on the same line in the left-right direction X. Similarly, the alignment marks and patterns arranged in each row may be arranged on the same line in the left-right direction X. The alignment marks may be referred to as alignment holes. The alignment marks may have a cross shape. Therefore, the marking beam LM shaped when passing through the alignment marks may appear as a cross shape on the transfer substrate S'. Alternatively, the alignment marks may have various shapes.

[0103] The line beam L, which extends in the left-right direction X, is shaped into multiple pattern beams L' and multiple marking beams LM as it passes through the pattern holes and the alignment marks formed in one of the multiple rows. These beams are then irradiated onto the transfer substrate S' in the form of multiple light spots. The shape and size of the pattern beams irradiated onto the transfer substrate S' can be determined by the shape and size of the pattern holes in the row through which the line beam L passes. Furthermore, the alignment between the mask 10 and the transfer substrate S' can be checked by observing the shape and position of the cross-shaped marking beam LM irradiated onto the transfer substrate S'.

[0104] The mask support 20 can support the mask 10 in a movable and rotatable manner. For example, the mask support 20 can support the mask 10 for movement in the left-right direction X, the front-back direction Z, and the vertical direction Y. Here, the mask support 20 can support the mask 10 so that the four corners of the mask 10 (i.e., the top, bottom, left, and right corners) move different distances in the front-back direction Z. In addition, the mask support 20 can support the mask 10 for rotation relative to the front-back direction Z.

[0105] The mask support 20 may be spaced upward from the first platform on which the transfer substrate S' is supported, and may be positioned between the laser source unit 30 and the reflector unit 40. The mask support 20 may have a predetermined area by extending in the vertical direction Y and the left-right direction X, and may have a predetermined thickness in the front-back direction Z. For example, the mask support 20 may have a rectangular plate shape with an open center portion. Alternatively, the mask support 20 may have various shapes. The mask support 20 is used to support the mask 10.

[0106] The mask supporter 20 may support the circumference of the mask 10. A plurality of patterns P and an alignment mark M defined in a central portion of the mask 10 may be exposed to the laser source unit 30 through an opening at the central portion of the mask supporter 20.

[0107] A driver (not shown) may be provided to the mask support 20. The driver may include at least one of a front-rear driver (not shown), a left-right driver (not shown), a vertical driver (not shown), and a rotation driver (not shown). The mask 10 may be supported by the driver. The mask support 20 can adjust the position and inclination of the mask in multiple directions using the driver.

[0108] The mask support 20 can change the position of the mask 10 so that the line beam L passes through a pattern P corresponding to the size, shape, and arrangement of the micro LED chips 1 attached to the transfer substrate S'. In other words, the mask support 20 can move and rotate the mask in multiple directions to select a pattern P from among the multiple patterns P through which the line beam L is transmitted. Thus, the mask 10 can cause the line beam L to pass through a pattern in a row of the multiple patterns P that corresponds to the shape, size, and arrangement of the multiple micro LED chips 1 attached to the transfer substrate S'. Therefore, the shape, size, and arrangement of the patterned beam L' irradiated onto the transfer substrate S' can be selected to correspond to the shape, size, and arrangement of the micro LED chips 1.

[0109] The laser light source unit 30 may be spaced apart from the mask 10 in, for example, the front-rear direction Z, and emit a laser beam toward the mask 10 in, for example, the form of a line beam L. The line beam L may extend in the left-right direction X and be emitted in the front-rear direction Z. The laser light source unit 30 may have various laser sources.

[0110] The reflective mirror unit 40 may be spaced apart upward from the transfer substrate S' and face the mask in the front-to-back direction Z. The reflective mirror unit 40 may reflect a plurality of patterned light beams L', which are shaped when passing through the mask 10, toward the transfer substrate S'. The reflective mirror unit 40 may be tilted 45° with respect to a traveling direction of the patterned light beams L'.

[0111] The reflector unit 40 can reflect the plurality of patterned light beams L' transmitted through a pattern having a size corresponding to the plurality of micro LED chips and the pair of marking light beams LM transmitted through a pair of alignment marks disposed on both sides of the pattern having a size corresponding to the plurality of micro LED chips, toward the transfer substrate S'. Thus, the plurality of patterned light beams L' and the pair of marking light beams LM can be simultaneously irradiated onto the transfer substrate S'.

[0112] The pattern beam L′ and the mark beam LM may travel in the front-rear direction Z between the mask 10 and the mirror unit 40 and be reflected downward by the mirror unit 40 to travel toward the transfer substrate S′ in a vertical direction.

[0113] The pattern replacing unit 50 may change the position of the mask 10 by controlling the mask support 20 so that the line beam L passes through a pattern having a size corresponding to the micro LED chips 1 attached to the transfer substrate S′ among the plurality of patterns P.

[0114] The pattern replacement unit 50 can change the position of the mask 10 by: receiving information on the size, shape and arrangement of the micro LED chip 1 attached to the transfer substrate S' from a process controller (not shown) that performs the process of transferring the micro LED chip; selecting a pattern corresponding to the received size, shape and arrangement of the micro LED chip; and controlling the mask support 20 to allow the line light beam L to transmit through the selected pattern.

[0115] The micro LED chip transfer apparatus according to an exemplary embodiment may include a first alignment monitoring unit 60 , a first alignment adjusting unit 70 , a second alignment monitoring unit 80 , and a second alignment adjusting unit 90 .

[0116] The first alignment monitoring unit 60 can be an optical camera. The first alignment monitoring unit 60 can be installed in multiple chips and positioned above the transfer substrate S'. The first alignment monitoring unit 60 can capture the marking beam LM irradiating the transfer substrate S' and generate an image of the marking beam. The first alignment monitoring unit 60 can be used to check the position and shape of the marking beam LM irradiating the transfer substrate S'.

[0117] The first alignment adjustment unit 70 can change the position and tilt of the mask in a direction intersecting the direction of travel of the line beam L by controlling the mask support 20 to coincide with a reference mark marked on the transfer substrate S', so that a pair of alignment marks formed on the transfer substrate S' by the pair of marking beams LM irradiated downward onto the transfer substrate S' corresponds to the marking beams LM. The first alignment adjustment unit 70 can adjust the alignment state of the mask 10 by receiving a marking beam image from the first alignment monitoring unit 60 and controlling the mask support 20 based on the position and shape of the alignment mark displayed in the marking beam image.

[0118] Since the position of the alignment mark and the position of the reference mark on the transfer substrate S' are checked by using the first alignment monitoring unit 60 and the first alignment adjustment unit 70, and the alignment state of the mask 10 is adjusted so that the alignment mark moves to the reference mark position, the position of the mask 10 can be initially aligned relative to the transfer substrate S'.

[0119] The second alignment monitoring unit 80 may be a beam profile camera. The second alignment monitoring unit 80 may be movably mounted below the substrate S. The second alignment monitoring unit 80 may generate a patterned beam image by capturing a focused image of the patterned beam L' transmitted through the transfer substrate S'. The second alignment monitoring unit 80 may be used to inspect the focal shape and characteristics of the patterned beam L' irradiated onto the transfer substrate S'. The characteristics of the patterned beam L' may include the contrast and energy distribution curve of the focal point of the patterned beam L'. The energy distribution curve may be used to inspect the energy concentration and uniformity of the patterned beam L', and the contrast of the patterned beam L' may be used to inspect the visibility.

[0120] The second alignment adjustment unit 90 can change the position and inclination of the mask 10 in the traveling direction of the linear beam L by controlling the mask support 20 so that the characteristics of the patterned beam collected from the focused images of the plurality of patterned beams L' transmitted from top to bottom through the transfer substrate S' are consistent with reference characteristics. To this end, the second alignment adjustment unit 90 can receive the patterned beam image from the second alignment monitoring unit 80 and adjust the alignment state of the mask 10 by controlling the mask support 20 so that at least one of the energy distribution curve and the contrast of the patterned beam inspected from the patterned beam image is consistent with at least one of the reference energy distribution curve and the reference contrast.

[0121] Since the alignment of the mask 10 is adjusted so that the energy distribution curve of the patterned beam is consistent with the reference energy distribution curve, and the contrast of the patterned beam is made consistent with the reference contrast by checking the state of the patterned beam L' irradiated on the transfer substrate S' using the second alignment monitoring unit 80 and the second alignment adjustment unit 90, the position of the mask 10 can be re-aligned relative to the transfer substrate S'. Therefore, distortion of the patterned beam L' can be avoided.

[0122] When the position of the mask 10 is aligned relative to the transfer substrate S', the patterned light beam L' can be exactly irradiated onto the attachment surface between the transfer substrate S' and the micro LED chip 1 attached to the transfer substrate S', and the micro LED chip 1 can be smoothly separated from the transfer substrate S' and fall exactly to the desired position.

[0123] As described above, the chip transfer apparatus according to exemplary embodiments may transfer a plurality of chips to predetermined positions of a transferred substrate at a time by using a mask having a pattern.

[0124] That is, since a mask having a pattern is used, the micro LED chips can be transferred in pattern units.

[0125] In addition, the chip transfer apparatus according to the exemplary embodiment can transfer micro LED chips of various sizes to a predetermined position of a transferred substrate by using a mask having a plurality of patterns. More specifically, according to the exemplary embodiment, micro LED chips of a desired size among a plurality of sizes can be easily transferred to a predetermined position of a transferred substrate by using one mask having a plurality of different patterns.

[0126] That is, micro LED chips of various sizes can be simply transferred to predetermined positions of the transferred substrate, so that although the size of the micro LED chip is changed as the production model changes, the mask is simply moved to replace the pattern through which the laser line beam passes instead of being replaced, and the attachment surface between the transfer substrate and the multiple micro LED chips is irradiated by adjusting the size, shape and gap of multiple pattern light beams transmitted through the pattern corresponding to the changed size of the micro LED chip.

[0127] Therefore, the time required to replace the mask can be saved, shortening the process time, reducing the workload of the workers due to mask replacement, and substantially avoiding alignment defects that occur during mask replacement to ensure stable laser beam quality. Therefore, the productivity of the micro-LED chip transfer process can be improved.

[0128] Figure 8 is a flowchart of a chip transfer method according to an exemplary embodiment.

[0129] Hereinafter, a chip transfer method according to an exemplary embodiment will be described.

[0130] A chip transfer method according to an exemplary embodiment includes: preparing a transfer substrate S' on which a plurality of chips (for example, a plurality of micro LED chips 1) are arranged on a transferred substrate (hereinafter referred to as a substrate S); emitting a line beam L; shaping a plurality of pattern beams L' from the line beam L by using a mask 10 arranged on a path of the line beam L; separating the plurality of micro LED chips 1 from the transfer substrate S' by irradiating the pattern beam L' to the transfer substrate S'; and placing the plurality of chips separated from the transfer substrate S' on the substrate S.

[0131] In addition, the chip transfer method according to the exemplary embodiment may further include replacing the pattern to change the position of the mask 10 between the preparation of the transfer substrate S' on the substrate S and the emission of the line light beam L, so that the line light beam L is shaped into a patterned beam L' by transmitting the line light beam L through a pattern having a size corresponding to each of the multiple micro LED chips 1 among the multiple patterns P formed in the mask 10.

[0132] Here, the characteristic of corresponding size means that the sizes are consistent with each other within a predetermined tolerance value. For example, the size (or 'area') of a micro LED chip 1 and the focused size of a patterned beam L' can be consistent with each other within a predetermined tolerance (e.g., margin). Here, the size of the patterned beam can be relatively large. Therefore, when the patterned beam is irradiated onto the attachment surface between the micro LED chip and the transfer substrate S', the patterned beam can be uniformly irradiated from the center portion to the edge of the attachment surface.

[0133] In addition, the chip transfer method according to an exemplary embodiment may further include: shaping a marking beam LM from the line beam L by using a mask 10 disposed on the path of the line beam L between the emission of the line beam L and the separation of the plurality of micro LED chips 1; generating a marking beam image by irradiating the marking beam LM onto a transfer substrate S' and capturing the marking beam LM on the transfer substrate S'; and preliminarily aligning the position of the mask 10 relative to the transfer substrate S' by using the marking beam image. Here, shaping the marking beam LM and shaping the pattern beam L' can be performed simultaneously.

[0134] More specifically, by using the same line beam L, the shaping of the mark beam LM and the shaping of the pattern beam L' may be simultaneously performed on the same line along the width direction of the line beam L.

[0135] That is, the marking beam LM and the pattern beam L' can be simultaneously shaped from the same line beam L. Here, a portion of the line beam L can be shaped into the marking beam LM, and the remaining portion of the line beam L can be shaped into the pattern beam L'. In other words, the marking beam LM can be shaped from the two side edges of the line beam L, and the pattern beam L' can be shaped from the remaining portion of the line beam L.

[0136] In addition, the chip transfer method according to the exemplary embodiment may further include: between the initial alignment and the separation of the plurality of micro LED chips 1, generating a patterned beam image by irradiating the patterned beam L' onto the transfer substrate S' and photographing the patterned beam L' transmitted through the transfer substrate S'; and secondarily aligning the distance and tilt of the mask 10 relative to the transfer substrate S' by using the patterned beam image, so as to focus the patterned beam transmitted through the mask 10 and irradiated onto the transfer substrate S'.

[0137] The chip transfer method according to an exemplary embodiment may transfer a plurality of micro LED chips 1 from a transfer substrate S' to a substrate S. The chip transfer method according to an exemplary embodiment may be referred to as a micro LED chip transfer method.

[0138] Step S100: First, refer to Figure 1 , a transfer substrate S' having a plurality of micro LED chips 1 disposed thereon is prepared on a substrate S. Here, a plurality of micro LED chips 1 can be manufactured on the transfer substrate S'. Alternatively, a plurality of micro LED chips 1 can be manufactured on a separate sacrificial substrate and then attached to the transfer substrate S'.

[0139] First and second platforms (not shown) may be prepared so as to face each other in the vertical direction Y. The transfer substrate S' may be supported by the bottom surface of the first platform, and the substrate S may be placed on the top surface of the second platform. The transfer substrate S' and the substrate S may be aligned with each other by moving and rotating each of the first and second platforms in multiple directions using first and second driving units (not shown).

[0140] Here, methods for aligning the transfer substrate S′ and the substrate S with each other in the vertical direction Y may be variously provided. The feature of aligning the transfer substrate S′ and the substrate S with each other may be referred to as a substrate alignment process.

[0141] Step S200 : Thereafter, the pattern is replaced by changing the position of the mask 10 so that the line beam L is shaped into a patterned beam L′ by transmitting the line beam L through a pattern having a size corresponding to the plurality of micro LED chips 1 among the plurality of patterns P formed in the mask 10 .

[0142] Figure 3 : is a flow chart showing a micro LED chip transfer process in which a line beam L is transmitted through a feature of a pattern formed in the third row r3. Figure 4 1 is a flow chart illustrating a micro LED chip transfer process of moving the mask 10 to transmit the line beam L through features of a pattern formed in the first row r1 .

[0143] refer to Figure 3 and Figure 4 , the line beam L may be transmitted through a pattern in one row among a plurality of rows of the pattern P by moving the mask 10 in the vertical direction Y. Here, the mask 10 may be aligned with respect to the transfer substrate S' and may be distorted.

[0144] Step S300: Emitting a line beam L toward the transfer substrate S'. The line beam L may be emitted from the light source unit 30 toward the transfer substrate S', transmitted through the mask 10 and the reflective mirror unit 40 disposed on the path between the laser light source unit 30 and the transfer substrate S', and then irradiated onto the transfer substrate S'.

[0145] Step S410: Marking beams LM are shaped from the line beam L using a mask 10 disposed on the path of the line beam L. For example, a pair of marking beams LM are formed on both sides of the pattern beam L' by causing the line beam L to pass through a pair of alignment marks M formed on both sides of the plurality of patterns P. The pair of alignment marks are formed on both sides of a pattern having a size corresponding to that of the plurality of micro LED chips 1. The pair of marking beams LM are shaped into the shape of the alignment marks, for example, a cross, and travel in the front-rear direction Z toward the reflector unit 40.

[0146] Step S420: Thereafter, a marking beam image is generated by irradiating the marking beam LM onto the transfer substrate S' and photographing the marking beam LM on the transfer substrate S'. That is, a pair of marking beams LM traveling in the front-to-rear direction Z toward the reflector unit 40 are reflected by the reflector unit 40 and travel to the transfer substrate S', and a pair of alignment marks formed on the transfer substrate S' by the pair of marking beams LM irradiated onto the transfer substrate S' from top to bottom are photographed by the first alignment monitoring unit 60. Here, a reference mark pre-marked on the transfer substrate S' may also be photographed in the marking beam image. Alternatively, the reference mark may be inserted into the photographed alignment mark image with reference to the coordinates (0,0) of the reference mark marked on the transfer substrate S' by the marking beam LM.

[0147] Figure 5 is a flow diagram of a micro LED chip transfer process showing features of adjusting the position and tilt of the mask 10 in the primary alignment of the mask 10 .

[0148] Step S430: Thereafter, the position of the mask 10 is preliminarily aligned relative to the transfer substrate S' by using the mark beam image. Specifically, the position and tilt of the mask 10 are adjusted by the following operations: calculating the offset Δx, offset Δy, and offset Δθ of the alignment mark relative to the reference mark from the mark beam image input from the first alignment monitoring unit 60 to the first alignment adjustment unit 70; controlling the mask support 20 by the first alignment monitoring unit 60; and moving the mask 10 in a direction aligned with the traveling direction of the line beam L (reference mark). Figure 4 and Figure 5 ) and the front-back direction Z. Here, the tilt refers to the tilt or rotation angle of the mask 10 relative to the XZ plane.

[0149] Thereafter, the generation of the marking beam image and the initial alignment can be repeated to ensure that the alignment mark and the reference mark on the transfer substrate S' are aligned. Through the above-described process, the initial alignment of the mask 10 is completed, and the marking beam LM can be irradiated to the desired position on the transfer substrate S'. Therefore, the patterned beam L' positioned between the marking beams LM can also be irradiated to the desired position on the transfer substrate S'.

[0150] Step S510: A plurality of pattern beams L' are formed from the line beam L by using the mask 10 disposed on the path of the line beam L. Here, this process can be performed in combination with the shaping of the marking beam LM from the line beam L described above. For example, the line beam L is emitted from the laser light source unit 30 to the mask 10 and then shaped into the pattern beams L' while passing through the mask 10.

[0151] Figure 6is a flow diagram illustrating a feature of a micro LED chip transferring process of capturing a focused image of a patterned beam L′ transmitted through a transfer substrate S′ while scanning the transfer substrate S′ by using the second alignment monitoring unit 80 .

[0152] Step S520: Thereafter, a patterned beam image is generated by irradiating the patterned beam L' onto the transfer substrate S' and photographing the patterned beam L' transmitted through the transfer substrate S'. That is, the patterned beam L' transmitted through the mask 10 travels to the reflector unit 40 and is reflected by the reflector unit 40, thereby irradiating the transfer substrate S'. In addition, by using the second alignment monitoring unit 80 (reference Figure 6 ), a patterned beam image is generated by photographing the patterned beam L' transmitted through the transfer substrate S' to form a focus on the attachment surface between the micro LED chip 1 and the transfer substrate S'.

[0153] Here, while scanning the transfer substrate S' along the arrangement direction of the multiple patterned light beams L' transmitted from top to bottom through the transfer substrate S', a focused image of the multiple patterned light beams is captured. This process is performed between the initial alignment and the separation of the multiple micro LED chips. In other words, the patterned light beam image is generated by capturing the patterned light beams L' transmitted through the mask 10 after the initial alignment.

[0154] Figure 7 1 is a flow chart of a micro LED chip transfer process showing features of adjusting the position and tilt of the mask 10 in the secondary alignment of the mask 10 .

[0155] Step S530: Thereafter, by using the second alignment adjustment unit 90, the inclination and distance of the mask 10 are secondarily aligned relative to the transfer substrate S' by using the pattern beam image, so as to focus the pattern beam L' irradiated onto the transfer substrate S'. That is, the characteristics of the pattern beam are collected from the focused image taken by the second alignment monitoring unit 80. The characteristics of the pattern beam collected from the focused image may include at least one of the energy distribution curve and contrast of the pattern beam. Subsequently, by using the second alignment adjustment unit 90, the position and inclination of the mask 10 are adjusted in the direction of travel of the linear beam L (for example, in the front-to-back direction Z) by comparing the collected characteristics with the reference characteristics and controlling the mask support 20 so that the collected characteristics are consistent with the reference characteristics. Here, the position is the position in the front-to-back direction Z, and the inclination is the inclination relative to the XY plane.

[0156] Here, the four corners (ie, top, bottom, left, and right corners) of the mask 10 may be moved in the front-back direction Z by different distances ΔZ1 to ΔZ4 or the same distance (refer to FIG. Figure 7For example, when the mask 10 is pulled or pushed toward the laser source unit 30 in the front-rear direction Z, the patterned beam L' may have a distinct focus, and here, the energy distribution curve may increase or decrease along the pushing or pulling direction to have a desired value.

[0157] By the above-described process, the jitter of the focused image of the patterned beam L' can be compensated, and the above-described patterned beam image generation and secondary alignment can be repeated to compensate the jitter of the focused image to a desired level. Thus, the alignment between the mask 10 and the transfer substrate S' can be completed.

[0158] Step S600: Thereafter, when the patterned light beam L' that has been shaped while passing through the mask 10 that has completed the primary and secondary alignment is irradiated onto the transfer substrate S', thermal energy is applied to the attachment surface between the transfer substrate S' and the micro LED chip 1, and the plurality of micro LED chips 1 are separated from the transfer substrate S'. Specifically, the plurality of patterned light beams can be simultaneously irradiated onto the plurality of micro LED chips 1 that will be separated from the transfer substrate S' in a respectively corresponding manner. Here, the feature of irradiating in a corresponding manner means irradiating one patterned light beam onto one micro LED chip 1. In this process, the plurality of micro LED chips 1 can be transferred to the substrate S, i.e., the transferred substrate S, at one time in a pattern unit.

[0159] Here, since the mask 10 is aligned with the transfer substrate S', and the transfer substrate S' is aligned with the substrate S, the plurality of micro LED chips 1 can be smoothly separated from the transfer substrate S', and in the process to be described later, the micro LED chips 1 can be placed in position on the substrate.

[0160] Thereafter, each of the plurality of micro LED chips 1 separated from the transfer substrate S' is precisely placed at a desired position on the substrate S. Here, the plurality of micro LED chips 1 separated from the transfer substrate S' are dropped downward by their own weight. In this process, the micro LED chips 1 can be transferred to the substrate S.

[0161] Here, a thin film layer (not shown) made of a bonding material may be provided on the top surface of the substrate S so that the chip attaching portion of the substrate S and the substrate attaching portion of the micro LED chip 1 are attached to and electrically connected to each other.

[0162] The thin film layer made of the bonding material may be an anisotropically conductive film (ACF). The thin film layer made of the bonding material may contain a plurality of conductive particles distributed therein and have predetermined bonding properties. The thin film layer made of the bonding material may be referred to as a conductive material layer or an anisotropic conductive film.

[0163] When the separation of the chips and the transfer of the separated chips to the transferred substrate are repeated while the pattern light beam L' scans the transfer substrate S' in the front-to-back direction, and all the multiple micro LED chips 1 are separated from the transfer substrate S' and transferred from the transfer substrate S' to the substrate S, the next transfer substrate S' can be loaded on the first platform and the next transfer process can be performed.

[0164] Thereafter, when pixel formation is completed by respectively transferring the plurality of micro LED chips 1 to all desired positions of the substrate S (eg, the transferred substrate S), the substrate S may be moved to the next process position and subsequent processes may be performed.

[0165] The subsequent process may be a process of attaching and electrically connecting the micro LED chip 1 to the thin film layer made of the bonding material provided on the substrate S by applying heat to the attachment surface between the micro LED chip 1 and the substrate S.

[0166] As described above, in the chip transfer process to which the chip transfer method and apparatus according to the exemplary embodiment are applied, although the size of the micro LED chip 1 on the transfer substrate S' changes as the production model changes, only the pattern position is changed by moving the mask 10 instead of replacing the mask 10.

[0167] Specifically, a micro LED display device may include micro LED chips that form pixels having sizes that vary depending on the production model. Therefore, even when the production model of the micro LED display device to be produced in the process facility is changed, only the pattern position can be changed by moving the mask 10 rather than replacing it.

[0168] That is, according to exemplary embodiments, since the production model has changed but the mask 10 does not need to be replaced, the workers do not need to stop the process facility, replace the current mask with a new mask having a pattern corresponding to the size of the changed micro LED chip, and readjust the size, shape, and gap of the laser pattern beam. Therefore, the overall process time can be reduced.

[0169] In addition, according to exemplary embodiments, since the primary and secondary alignments are sequentially performed after pattern replacement, stable laser quality can be ensured. Therefore, the process of transferring micro LED chips can have improved productivity.

[0170] Furthermore, since the laser line beam is processed into a plurality of laser pattern beams spaced apart from one another by transmitting the laser line beam through the pattern P of the mask 10, and the plurality of processed laser pattern beams L' are irradiated onto the attachment surface between the plurality of micro LED chips 1 and the transfer substrate S' when the micro LED chips 1 are separated from the transfer substrate S', the plurality of micro LED chips can be separated at once, and the plurality of micro LED chips 1 can be simultaneously transferred to a wide area on the transferred substrate S. Therefore, the processing speed can be increased.

[0171] According to example embodiments, a plurality of chips may be transferred to predetermined positions on a transferred substrate at a time by using a mask having a pattern.

[0172] For example, when applied to a micro LED chip transfer process, when transferring a micro LED chip having a size equal to or less than 100 microns from a transfer substrate to a transferred substrate, a plurality of micro LED chips as many as the number of pattern beams shaped by using a pattern can be transferred at one time.

[0173] Therefore, the process time can be reduced and the productivity of the micro LED chip transfer process can be improved.

[0174] Although the deposition apparatus and method have been described with reference to specific embodiments, they are not limited thereto. Therefore, those skilled in the art will readily appreciate that various modifications and changes can be made thereto without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A chip transfer method, comprising: preparing a transfer substrate on a transferred substrate, wherein a plurality of chips are arranged on the transfer substrate; emitting a line beam; shaping a plurality of patterned beams from the line beam by using a mask disposed on a path of the line beam; irradiating the patterned light beam onto the transfer substrate, and generating a patterned light beam image by photographing the patterned light beam transmitted through the transfer substrate; aligning the tilt and distance of the mask relative to the transfer substrate by using the patterned beam image to focus the patterned beam transmitted through the mask and irradiated onto the transfer substrate; irradiating the transfer substrate with the patterned light beam to separate the plurality of chips from the transfer substrate; as well as The plurality of chips separated from the transfer substrate are placed on the transferred substrate. 2 . The chip transfer method according to claim 1 , wherein the separation of the plurality of chips comprises irradiating a plurality of the patterned light beams to the plurality of chips to be separated from the transfer substrate in a respectively corresponding manner.

3. The chip transfer method according to claim 2 , further comprising replacing a pattern by changing a position of the mask, so that the line beam is transmitted through a pattern having a size corresponding to each of the plurality of chips among a plurality of patterns formed in the mask, to shape the line beam into the patterned beam.

4. The chip transfer method according to claim 3, further comprising: shaping a marking beam from the line beam by using the mask disposed in the path of the line beam; generating a marking beam image by irradiating the marking beam onto the transfer substrate and photographing the marking beam on the transfer substrate; as well as The marking beam image is used to align the position of the mask relative to the transfer substrate.

5. The chip transfer method according to claim 4 , wherein the shaping of the pattern beam and the shaping of the mark beam are simultaneously performed by using the same line beam. The marking beam is shaped from a portion of the line beam, and the pattern beam is shaped from the remaining portion of the line beam.

6. The chip transfer method according to claim 4, wherein the shaping of the marking beam includes forming a pair of the marking beams at both sides of the pattern beam by transmitting the line beam through a pair of alignment marks among a plurality of alignment marks formed at each side of a plurality of patterns, the pair of alignment marks being formed at both sides of a pattern having a size corresponding to the plurality of chips.

7. The chip transfer method according to claim 6, wherein generating the marking beam image comprises: photographing a pair of alignment marks formed on the transfer substrate by a pair of marking light beams irradiated onto the transfer substrate from top to bottom; as well as A reference mark is inserted into an image obtained by photographing the alignment mark with reference to coordinates of the reference mark displayed on the transfer substrate corresponding to the marking beam.

8. The chip transfer method according to claim 7, wherein aligning the position of the mask by using the marking beam image comprises: calculating an offset of the alignment mark relative to the reference mark from the marking beam image; as well as The position and inclination of the mask are adjusted by an amount equal to the offset in a direction intersecting the traveling direction of the line beam so that the alignment mark coincides with the reference mark.

9. The chip transfer method according to claim 4, wherein generating the patterned light beam comprises: While scanning the transfer substrate along an arrangement direction of the plurality of patterned light beams transmitted through the transfer substrate from top to bottom, focused images of the plurality of patterned light beams are captured.

10. The chip transfer method according to claim 9, wherein aligning the tilt and distance of the mask by using the patterned beam image comprises: collecting characteristics of the patterned light beam from the focused image and comparing the collected characteristics with reference characteristics; as well as The position and tilt of the mask are adjusted in the traveling direction of the line beam so that the collected characteristics are consistent with the reference characteristics.

11. A chip transfer device for transferring a plurality of chips from a transfer substrate to a transferred substrate, comprising: a mask having a pattern for shaping a line beam into a plurality of pattern beams to be irradiated onto the transfer substrate; a mask support configured to movably and rotatably support the mask; a laser source unit configured to emit the line beam toward the mask so as to transfer the plurality of chips; an alignment monitoring unit configured to generate a marking beam image by capturing a focused image of the patterned beam transmitted through the transfer substrate; as well as An alignment adjustment unit is configured to change the position and inclination of the mask in a direction intersecting the traveling direction of the line light beam by controlling the mask support so that the characteristics of the pattern light beam are consistent with reference characteristics, wherein the characteristics are collected from the focused images of the plurality of pattern light beams transmitted from top to bottom through the transfer substrate.

12. The chip transfer apparatus according to claim 11, wherein a plurality of different patterns are formed in the mask, and One of the plurality of patterns has a size corresponding to each of the plurality of chips.

13. The chip transfer apparatus according to claim 12, further comprising a pattern replacement unit configured to change a position of the mask by controlling the mask support so that the line beam is transmitted through a pattern having a size corresponding to the plurality of chips attached to the transfer substrate among a plurality of patterns.

14. The chip transfer apparatus according to claim 12, wherein each of the plurality of patterns comprises a plurality of pattern holes, The pattern holes arranged on the same line in the width direction of the line beam have the same shape, size and arrangement, and the pattern holes arranged in a direction crossing the width direction of the line beam have different shapes, sizes and arrangements.

15. The chip transfer apparatus according to claim 13 or 14, wherein a plurality of alignment marks are formed at both sides of the plurality of patterns in a width direction of the line beam, The plurality of alignment marks are arranged on the same line as the plurality of patterns in the width direction of the line beam, and A plurality of pattern light beams transmitted through a pattern having a size corresponding to that of a plurality of micro LED chips, and a pair of mark light beams transmitted through a pair of alignment marks arranged on both sides of the pattern having a size corresponding to that of a plurality of micro LED chips, are simultaneously irradiated onto the transfer substrate.

16. The chip transfer device according to claim 15, further comprising: a first alignment monitoring unit configured to generate a marking beam image by photographing the marking beam irradiated onto the transfer substrate; as well as a first alignment adjustment unit configured to change the position and inclination of the mask in a direction intersecting the traveling direction of the line beam by controlling the mask support to be consistent with a reference mark displayed on the transfer substrate, so that a pair of alignment marks formed in the transfer substrate by a pair of the mark beams irradiated from top to bottom onto the transfer substrate correspond to the mark beams, The alignment monitoring unit is a second alignment monitoring unit, and the alignment adjustment unit is a second alignment adjustment unit.

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