Component, component manufacturing method and substrate processing device

Abstract

The present invention provides a component, a method for manufacturing the component, and a substrate processing apparatus capable of improving the uniformity of an oxide film covering an aluminum material containing silicon. The provided component is a component for a substrate processing apparatus, the component being formed from aluminum containing silicon, with a silicon grain size of 1 μm or less.

Description

Technical Field

[0001] The present invention relates to a component, a method for manufacturing the component and a substrate processing device. Background Art

[0002] For example, Patent Document 1 proposes a technique in which aluminum having a Si content of 4 to 6% is used to cast a component of a vacuum vessel for a vacuum device, which maintains a vacuum atmosphere for performing predetermined treatments on a workpiece or for transporting the workpiece. An anodic aluminum coating is then formed on the surface of the resulting vacuum vessel.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2007-260624 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a component capable of improving the uniformity of an oxide film covering an aluminum material containing silicon, a method for manufacturing the component, and a substrate processing apparatus.

[0008] Technical solutions to technical problems

[0009] According to one embodiment of the present invention, there is provided a component for a substrate processing apparatus, wherein the component is formed of aluminum containing silicon, and the silicon grain size is 1 μm or less.

[0010] Effects of the Invention

[0011] According to one embodiment, the uniformity of an oxide film covering an aluminum material containing silicon can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a diagram showing an example of the structure of a 3D printer according to one embodiment.

[0013] Figure 2 This is a diagram showing an example of a method for manufacturing a component for a substrate processing apparatus according to one embodiment.

[0014] Figure 3 Is used to illustrate Figure 2 FIG. 1 is a diagram of a manufacturing method.

[0015] Figure 4 This is a diagram showing a comparison between a component formed by a manufacturing method according to an embodiment and a comparative example.

[0016] Figure 5 This is a graph showing the comparison of the corrosion resistance of a component formed by a manufacturing method according to one embodiment with that of a comparative example.

[0017] Figure 6 This is a diagram showing a comparison of the insulation properties of a component formed by a manufacturing method according to one embodiment and a comparative example.

[0018] Figure 7 This is a diagram showing an example of the structure of a substrate processing apparatus according to one embodiment.

[0019] Description of Reference Numerals

[0020] 1 Plasma treatment device

[0021] 3 sculptures

[0022] 4 Oxide film

[0023] 5 Powder materials

[0024] 10 chambers

[0025] 14 Loading platform

[0026] 30 Upper electrode

[0027] 46 shielding parts

[0028] 48 baffle

[0029] 62 First High Frequency Power Supply

[0030] 64 Second high frequency power supply

[0031] 80 Second Control Unit

[0032] 200 3D printers

[0033] 202 Workbench

[0034] 203 Raw Materials Storage Department

[0035] 205 blade

[0036] 206 Light Source

[0037] 207 Blade drive unit

[0038] 208 Scanning galvanometer

[0039] 209 Laser Scanning Space

[0040] 210 Chamber

[0041] 250 First control unit. DETAILED DESCRIPTION

[0042] Hereinafter, the embodiment of the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are sometimes denoted by the same reference numerals, and repeated descriptions are omitted.

[0043] [Structure of a 3D printer]

[0044] First, refer to Figure 1 , an example of the structure of a 3D printer 200 that executes a method for manufacturing a component for a substrate processing apparatus according to an embodiment will be described. Figure 1 An example of the structure of a 3D printer 200 according to one embodiment is shown. The 3D printer 200 is an example of a device that produces (manufacturs) components for a substrate processing device. The substrate processing device is a device that processes a substrate using plasma, heat, or the like.

[0045] also, Figure 1 The 3D printer 200 shown is an example of an apparatus for manufacturing components that can be used in a substrate processing apparatus. The apparatus for manufacturing the components is not limited to a 3D printing apparatus. In addition, as an example of components for a substrate processing apparatus, a chamber, a substrate mounting table, an upper electrode, a baffle, a shielding member, etc. included in an example of a structure of a substrate processing apparatus described later can be cited (see Figure 7 ).

[0046] The 3D printer 200 can create three-dimensional objects, which are used as components in substrate processing devices. The 3D printer 200 stores three-dimensional data for creating three-dimensional objects in a storage unit such as RAM 256 and manufactures the objects based on the three-dimensional data. The objects can be created on a workbench 202 on a work table. The workbench 202 can be raised or lowered, for example, gradually, as the object's creation progresses.

[0047] Two blades 205 are separately set on the work table in the chamber 210. The raw material storage section 203 is arranged at a position located above the upper part of the chamber 210 and above the two blades 205. The raw material storage section 203 stores the raw material for forming the shaped object, that is, silicon-containing aluminum powder material (aluminum alloy). Here, the silicon-containing aluminum is not limited to powder, but can also be in the shape of a wire. The raw material is put into between the two blades 205 from the raw material storage section 203. The put raw material is formed into powder by using the two blades 205 driven by the blade driving section 207. A specified amount of powdered raw material (hereinafter also referred to as "powder material 5") is supplied to the laser scanning space 209. Figure 1 It shows the state where the powder material 5 is spread all over the laser scanning space 209 on the work table.

[0048] In this manner, the aluminum powder material 5 containing silicon is supplied and irradiated with an energy beam to melt the powder material 5. In this embodiment, laser light A (optical laser) is used as the energy beam to be irradiated.

[0049] Laser light A is emitted from light source 206, has its irradiation angle changed by galvanometer mirror 208, and is irradiated through laser transmission window 211 to a predetermined position of the irradiation area on stage 202. Light source 206 and galvanometer mirror 208 are preferably disposed outside chamber 210.

[0050] This allows laser A to be scanned in at least two dimensions (X and Y) on the worktable 202. For example, the scanning galvanometer 208 can be controlled to move the irradiation point of laser A on the worktable 202 according to three-dimensional data representing the three-dimensional structure of the object. Specifically, under the control of the first control unit 250, the scanning galvanometer 208 changes the irradiation angle, scanning laser A in two dimensions (X and Y) according to the progress of object formation. Laser A melts the silicon-containing aluminum powder on the worktable 202. The material then cools and solidifies, forming the object.

[0051] In addition, it is preferable that the temperature of the raw material storage section 203 can be adjusted by a heating device. In addition, it is preferable that a mechanism capable of supplying an inert gas and exhausting the inside of the chamber 210 is provided in the chamber 210 .

[0052] The first control unit 250 includes a CPU 252, a ROM 254, and a RAM 256. The first control unit 250 controls the supply of raw material powder from the raw material storage unit 203 and the raising and lowering of the worktable 202. Furthermore, the first control unit 250 controls the lighting of the light source 206 and the change in the laser irradiation angle by the scanning galvanometer 208. Thus, the first control unit 250 sequentially executes the steps of supplying silicon-containing aluminum powder material, melting the powder material, and cooling the melted material once or multiple times. As a result, a molded object 3 used as a component of a substrate processing device can be manufactured.

[0053] The control program executed by the CPU 252 is stored, for example, in the ROM 254. The CPU 252 executes the control program based on the three-dimensional data stored in the RAM 256, thereby controlling the production of the object 3. Furthermore, the control program may be stored in a non-removable recording medium or in a removable computer-readable recording medium such as various flash memories, optical (or magnetic) disks, or the like.

[0054] The first control unit 250 also includes a display 258 and an input device 260 such as a keyboard and a pointing device. The display 258 is used to display the progress of the formation of the object 3. The input device 260 is used to input commands such as starting and stopping the operation of the 3D printer 200 and control parameters.

[0055] The three-dimensional data is stored in a storage unit such as the RAM 256. The three-dimensional data includes data for forming a molded object 3 that can be used as a component used in a substrate processing apparatus from an aluminum powder material containing a predetermined silicon content.

[0056] [Method of manufacturing components]

[0057] Below, refer to Figure 2 and Figure 3 , an example of a method for manufacturing components for a substrate processing device is described. Figure 2 This is a diagram showing an example of a method for manufacturing a component for a substrate processing apparatus according to one embodiment. Figure 3 Is used to illustrate Figure 2 A diagram illustrating a method for manufacturing a component for a substrate processing apparatus according to one embodiment is shown.

[0058] Figure 2 Steps S1 to S7 are processes executed by the 3D printer 200. Step S9 is a process executed by a furnace (not shown). Step S11 is a process executed using an apparatus (not shown) for performing anodizing treatment.

[0059] When this process starts, the first control unit 250 obtains the 3D data stored in the RAM 256 and supplies the aluminum powder material 5 containing silicon to the laser scanning space 209 based on the 3D data to deposit it (step S1). At this time, the first control unit 250 controls the blade driving unit 207 to operate the blade 205 so that the raw material inserted between the blades 205 from the raw material storage unit 20 is in powder form, and the generated powder material 5 is supplied to the laser scanning space 209. For example, the shaped object 3, such as Figure 3 As shown in (a), a silicon-containing aluminum powder material 5 is deposited on a substrate 2. The substrate 2 may be formed of the same material as the powder material 5 or may be formed of a different material.

[0060] Next, the first control unit 250 irradiates the deposited powder material 5 with laser A to melt the powder material 5 (step S3). At this time, the first control unit 250 controls the laser irradiation angle based on the scanning galvanometer 208 to irradiate the laser A to the powder material 5 to melt the powder material 5. Figure 3 As shown in (b), the powder material 5 is in a state of being melted on the substrate 2 or melted together with a part of the surface of the substrate 2 (in Figure 3 In (b) it is represented by 2').

[0061] Next, the first control unit 250 cools the melted material (step S5). The cooling of the material is preferably rapid solidification with a solidification time of less than 1 second, but it can also be natural cooling, or both rapid solidification and natural cooling can be performed. Figure 3 As shown in (c), the silicon-containing aluminum powder material 5 solidifies and becomes integrated with the base material 2.

[0062] exist Figure 2 Next, the first control unit 250 determines whether to repeat steps S1 to S5 (step S7). The number of repetitions of steps S1 to S5 is predetermined based on the thickness of the object 3 and the thickness of the powder material 5 that can be melted and solidified after one repetition (for example, 90 μm).

[0063] When the first control unit 250 determines that the process is repeated, it returns to step S1 and repeats the process of steps S1 to S7. By the above process, the powder material 5 is supplied, the powder material 5 is melted by the laser, and then solidified. Figure 3 Through the operations shown in (d) to (f), the manufacture of the three-dimensional object 3 is completed.

[0064] exist Figure 2 If, in step S7, the first control unit 250 determines that the process is not to be repeated, it transfers the object 3 from the 3D printer 200 to a furnace for stress removal heat treatment, where the thermal stress generated within the object 3 is removed. This eliminates internal deformation of the object 3. Step S9 can be omitted.

[0065] Next, the object 3 is transferred from the furnace to an anodizing apparatus, where the surface of the object 3 is oxidized (step S11). For example, the surface of the aluminum object 3 is anodized (anodized) to form an aluminum oxide (Al2O3) film. The oxidation treatment in step S11 may also include natural oxidation by placing the object 3 in air. Furthermore, step S11 may be omitted.

[0066] According to the component manufacturing method described above, the silicon particles added to the aluminum material constituting the shaped object 3 can have a diameter of 1 μm or less. This improves the uniformity of the oxide film covering the aluminum material, thereby enhancing the corrosion resistance and insulation properties of components used in substrate processing equipment. Furthermore, wear-resistant, hard components can be manufactured.

[0067] [Experimental Results]

[0068] Reference Figure 4The following describes the state of aluminum oxide in the aluminum molded object 3 formed using the 3D printer 200 and the oxide film 4 obtained by anodizing the surface of the aluminum molded object 3. Figure 4 (a) means Figure 2 and Figure 3 As described above, the aluminum molded object 3 formed using the 3D printer 200 and the state of the aluminum oxide of the oxide film 4 obtained by anodizing the surface of the aluminum molded object 3 are shown. Figure 4 (b) shows the state of aluminum oxide in an aluminum casting 300 formed by pouring aluminum molten metal 320 into a mold 310 and an oxide film 400 obtained by anodizing the surface of the aluminum casting 300 as a comparative example.

[0069] The flow of the molten aluminum metal 320 in the mold 310 is accompanied by a decrease in temperature of the molten aluminum metal 320 due to heat transfer from the molten aluminum metal 320 to the mold 310, causing the molten aluminum metal 320 to begin solidifying. The flow may stop before the molten aluminum metal 320 fills the mold 310. In order to improve the flow of the molten aluminum metal 320 and prevent the flow of the molten metal 320 from stopping, the molten metal 320 is treated to contain silicon.

[0070] However, if Figure 4 As shown in the lower part of (b), when the surface of the aluminum casting 300 solidified by the molten metal 320 is anodized, there is a problem that the silicon 500 in the aluminum hinders the growth of the oxide film 400, and cracks 600 are generated in the oxide film 400.

[0071] The reason for this is that the silicon 500 added to the aluminum casting 300 has a particle size of about 10 μm. Therefore, the particles of silicon 500 inhibit the uniform growth of the oxide film 400. Figure 4 As shown in (b), cracks 600 that reach aluminum are generated in the oxide film 400 .

[0072] As a result, when an aluminum oxide film 400 is formed on the surface of an aluminum casting 300, the uneven growth of the oxide film 400 may cause a decrease in withstand voltage, a decrease in dust emission resistance and sealing performance, or a breakdown caused by an overcurrent flowing into the aluminum casting 300. In other words, when a component having an aluminum oxide film 400 formed on the surface of the casting 300 is used in a substrate processing device, there is a problem of deteriorating the quality of substrate processing.

[0073] On the other hand, if silicon is not added to the aluminum molten metal 320, the flow of the aluminum molten metal 320 becomes poor, causing defects such as pores and poor shape in the aluminum casting 300. Therefore, it is necessary to add silicon to aluminum in manufacturing. Similarly, in order to improve the fluidity of aluminum in the 3D printer 200, it is necessary to make the aluminum contain a specified amount of silicon. In addition, Figure 4 (a) the shape and Figure 4 In the castings of (b), the content of silicon added to aluminum is 9 to 11%. However, the content of silicon added to aluminum is not limited to this and may be other content.

[0074] Figure 4 The lower part of (a) shows the state of the aluminum shape 3 formed by using the 3D printer 200 and the aluminum oxide film 4 anodized on the surface thereof. In the manufacturing method of the component of this embodiment, by using the 3D printer 200 to form the aluminum shape 3, the silicon particle size added to the aluminum can be made less than 1 μm. Figure 4 This is not shown in Figure (a).

[0075] When the silicon particle size is less than 1 μm, silicon does not hinder the growth of the oxide film 4. Figure 4 As shown in (a), the oxide film 4 grows uniformly without any cracks inside.

[0076] Thus, it was confirmed that, in the aluminum oxide film 4 obtained by anodizing the surface of the aluminum shaped object 3, a uniform, crack-free oxide film 4 was formed even when the silicon addition amount relative to aluminum was as high as approximately 10%. Furthermore, when observing the aluminum shaped object 3, it was confirmed that coarse silicon particles with a particle size of approximately 10 μm, as contained in the aluminum casting 300, were not present, and that silicon was finely dispersed and precipitated.

[0077] The reason is that in the method of manufacturing the object 3 using the 3D printer 200, Figure 2 During the cooling process shown in step S5, the silicon is rapidly solidified, resulting in a silicon particle size of 1 μm or less, and the silicon is finely dispersed and precipitated within the aluminum molded object 3. This increases the solidification rate of the silicon-containing aluminum, resulting in fine dispersion of the silicon particles. During the anodizing process, the silicon particles do not hinder the growth of the oxide film 4, resulting in an oxide film 4 free of large cracks that reach the aluminum. Furthermore, the addition of silicon improves the fluidity of the aluminum (liquid).

[0078] On the other hand, according to the existing casting technology, Figure 4During the manufacturing process of the casting (b), the casting solidifies slowly. Therefore, the silicon grain size is formed to be about 10 μm. As a result, the quality of the oxide film 400 is deteriorated due to the large silicon grain size.

[0079] [Corrosion resistance]

[0080] Figure 5 (a) shows an example of experimental results on the corrosion resistance of an aluminum object 3 produced using the 3D printer 200 . The surface of the object 3 is anodized and covered with an oxide film 4 . Figure 5 (b) shows an example of the experimental results of the corrosion resistance of the casting 300 of aluminum produced by casting technology, which was anodized and covered with an oxide film 400. "Initial" shows the experimental results of the corrosion resistance of the shaped object 3 and the casting 300 in the initial state (25°C). The experimental results show that Figure 5 (a) The shape 3 and Figure 5 The casting 300 of (b) has the same degree of corrosion resistance. In other words, the molded object 3 produced using the 3D printer 200 has plasma resistance comparable to that of the casting 300 produced using a mold.

[0081] This experiment used the rating number method, a corrosion resistance testing method. The rating number method visually compares the size (area) and number of corrosion defects on the test piece after the test with each standard chart. The numerical value on the standard chart that matches the two is used as the rating number for the test piece. The rating number is not a unit, but rather a value from 0 to 10, categorized by the percentage of pitting (corrosion) area. A larger number indicates higher corrosion resistance. Figure 5 The evaluation value of the vertical axis is "9.8", and the pitting area ratio (%) is less than 0.02, indicating that it has Figure 5 The casting 300 of (b) has the same high corrosion resistance.

[0082] [Insulation]

[0083] Figure 6 (a) shows an example of experimental results on the insulation properties of an aluminum object 3 produced using a 3D printer 200 . The surface of the object 3 is anodized and covered with an oxide film 4 . Figure 6(b) shows an example of experimental results for the insulation properties of an aluminum casting 300 produced using a casting technique. The surface of the casting 300 was anodized to form an oxide film 400. A higher dielectric breakdown voltage (V / mm) indicates higher insulation properties. "Initial" shows the experimental results for the insulation properties of the shaped object 3 and the casting 300 in their initial state (25°C). "200°C" shows the experimental results for the insulation properties of the shaped object 3 and the casting 300 after heating to 200°C.

[0084] The experimental results show that, in both the "initial" and "200°C" cases, Figure 6 The insulation properties of the object 3 shown in (a) are better than Figure 6 The casting 300 shown in (b) is high. Figure 2 In step S5, it is important to increase the cooling rate and shorten the solidification time to disperse the silicon particles finely in the aluminum, thereby eliminating areas where the oxide film 4 cannot grow. This can prevent the generation of cracks in the oxide film 4 that reach the underlying aluminum.

[0085] exist Figure 6 In the molded object 3 of (a), the silicon particle size was reduced from about 10 μm in the conventional casting to less than 1 μm. Thus, even in the molded object 3 of aluminum with about 10% silicon added, the silicon particle size can be reduced to less than 1 μm. Figure 4 A uniform oxide film 4 is formed as shown in (a). This allows the formation of a crack-free oxide film 4 even during production at room temperature, improving the withstand voltage compared to conventional castings. Furthermore, as the solidification rate of aluminum increases, the aluminum grains also become smaller, reducing variations in color depth and film thickness.

[0086] In addition, it is known that when Figure 6 When the temperature of the object in (a) increases from its initial state (room temperature: 25°C) to 200°C, the insulation of the object decreases compared to its initial state. This is because the alumina oxide film 4 has a smaller linear expansion than the aluminum substrate, making it more susceptible to cracking when tensile stress acts on the film due to temperature changes. Therefore, the insulation of the object 3 decreases as the temperature rises.

[0087] In the manufacturing method of this embodiment, a 3D printer 200 capable of rapidly solidifying the formed object 3 is used to reduce the silicon particle size contained in the aluminum object 3 to 1 μm or less. However, the device used to form the object is not limited to the 3D printer 200, as long as the silicon particle size contained in the aluminum object can be reduced to 1 μm or less.

[0088] Furthermore, when the aluminum powder material is melted and solidified using a laser in the 3D printer 200 , the shaping direction may be vertical or horizontal relative to the finished object.

[0089] [Plasma processing equipment]

[0090] Finally, refer to Figure 7 , an example of a substrate processing apparatus that can use the component for a substrate processing apparatus according to one embodiment is described. Figure 7 A diagram showing an example of the structure of a substrate processing apparatus according to one embodiment. Figure 7 The plasma processing apparatus 1 shown is a capacitive coupling type apparatus and is an example of a substrate processing apparatus.

[0091] The plasma processing apparatus 1 includes a chamber 10. The chamber 10 defines an internal space 10s. The chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The internal space 10s is defined within the chamber body 12. The chamber body 12 is formed, for example, of aluminum. A corrosion-resistant film is formed on the inner wall surface of the chamber body 12. The corrosion-resistant film may be an anodized oxide film formed of a ceramic such as aluminum oxide or yttrium oxide.

[0092] A passage 12p is formed in the sidewall of the chamber body 12. When transporting substrates W between the interior space 10s and the exterior of the chamber 10, the substrates W pass through the passage 12p. The passage 12p can be opened and closed by a gate valve 12g, which is provided along the sidewall of the chamber body 12.

[0093] A support portion 13 is provided at the bottom of the chamber body 12. The support portion 13 is formed of an insulating material and has a generally cylindrical shape. The support portion 13 extends upward from the bottom of the chamber body 12 within the internal space 10s. An edge ring 25 (also called a focus ring) is provided on the support portion 13, surrounding the substrate. The edge ring 25 has a generally cylindrical shape and can be formed of silicon, for example.

[0094] The plasma processing apparatus 1 further includes a mounting table 14. The mounting table 14 is supported by the support portion 13. The mounting table 14 is provided in the internal space 10s. The mounting table 14 is configured to support the substrate W in the chamber 10, that is, in the internal space 10s.

[0095] The mounting table 14 has a lower electrode 18 and an electrostatic chuck 20 of the illustrated embodiment. The mounting table 14 can also have an electrode plate 16. The electrode plate 16 is formed of a conductor such as aluminum and has a substantially disk-shaped structure. The lower electrode 18 is provided on the electrode plate 16. The lower electrode 18 is formed of a conductor such as aluminum and has a substantially disk-shaped structure. The lower electrode 18 is electrically connected to the electrode plate 16. The outer peripheral surface of the lower electrode 18 and the outer peripheral surface of the electrode plate 16 are surrounded by the support portion 13.

[0096] Electrostatic chuck 20 is disposed on lower electrode 18. The electrodes of electrostatic chuck 20 are connected to DC power supply 20p via switch 20s. When voltage from DC power supply 20p is applied to the electrodes, substrate W is held on electrostatic chuck 20 by electrostatic attraction. Electrostatic chuck 20 supports substrate W and edge ring 25. Electrode plate 16 and lower electrode 18 are examples of a base supporting electrostatic chuck 20.

[0097] A flow path 18f is formed within the lower electrode 18. A heat exchange medium (e.g., refrigerant) is supplied to the flow path 18f from a cooling unit located outside the chamber 10 via a pipe 22a. The heat exchange medium supplied to the flow path 18f is returned to the cooling unit via a pipe 22b. In the plasma processing apparatus 1, the temperature of the substrate W placed on the electrostatic chuck 20 can be adjusted by heat exchange between the heat exchange medium and the lower electrode 18.

[0098] The plasma processing apparatus 1 is provided with a gas supply line 24. The gas supply line 24 supplies a heat transfer gas (eg, He gas) from a heat transfer gas supply mechanism to a position between the upper surface of the electrostatic chuck 20 and the lower surface of the substrate W.

[0099] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is disposed above the mounting table 14. The upper electrode 30 is supported on the upper portion of the chamber body 12 via a member 32. The member 32 is formed of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 12.

[0100] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 is the lower surface on the side of the internal space 10s and defines the internal space 10s. The top plate 34 can be formed of a low-resistance conductor or semiconductor that generates little Joule heat. A plurality of gas release holes 34a are formed in the top plate 34. The plurality of gas release holes 34a penetrate the top plate 34 in the thickness direction of the plate.

[0101] The support body 36 supports the top plate 34 in a manner that allows the top plate 34 to be removably attached to the support body 36. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is formed inside the support body 36. A plurality of gas holes 36b are formed in the support body 36. The plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are respectively connected to the plurality of gas release holes 34a. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0102] The gas supply unit GS including a gas source group 40, a flow controller group 44 and a valve group 42 is connected to the gas supply pipe 38. The gas source group 40 is connected to the gas supply pipe 38 via the flow controller group 44 and the valve group 42. The gas source group 40 includes a plurality of gas sources. The valve group 42 includes a plurality of on-off valves. The flow controller group 44 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 44 are each a mass flow controller or a pressure-controlled flow controller. The plurality of gas sources of the gas source group 40 are each connected to the gas supply pipe 38 via a corresponding flow controller of the flow controller group 44 and a corresponding on-off valve of the valve group 42. The power supply 70 is connected to the upper electrode 30. The power supply 70 applies a voltage to the upper electrode 30 for attracting positive ions in the internal space 10s to the top plate 34.

[0103] In the plasma processing apparatus 1, a shield 46 is detachably provided along the inner wall surface of the chamber body 12. The shield 46 is also provided on the outer periphery of the support portion 13. The shield 46 prevents reaction products such as etching byproducts from adhering to the chamber body 12. The shield 46 is formed, for example, by forming a corrosion-resistant film on the surface of an aluminum component. The corrosion-resistant film may be an oxide film such as aluminum oxide or yttrium oxide.

[0104] A baffle 48 is provided between the support portion 13 and the sidewall of the chamber body 12. Baffle 48 is formed, for example, by forming a corrosion-resistant film on the surface of an aluminum member. The corrosion-resistant film can be an oxide film such as aluminum oxide or yttrium oxide. Baffle 48 has multiple through-holes. Below baffle 48 and at the bottom of the chamber body 12, an exhaust port 12e is provided. An exhaust device 50 is connected to exhaust port 12e via an exhaust pipe 52. The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump.

[0105] The plasma processing apparatus 1 includes a first high frequency power source 62 for applying high frequency HF power for plasma generation. The first high frequency power source 62 is configured to generate high frequency HF power to generate plasma from gas in the chamber 10. The frequency of the high frequency HF is, for example, in the range of 27 MHz to 100 MHz.

[0106] The first high-frequency power supply 62 is electrically connected to the lower electrode 18 via a matching box 66. The matching box 66 includes a matching circuit. The matching circuit of the matching box 66 is configured to match the impedance of the load side (lower electrode side) of the first high-frequency power supply 62 with the output impedance of the first high-frequency power supply 62. In other embodiments, the first high-frequency power supply 62 may be electrically connected to the upper electrode 30 via the matching box 66.

[0107] The plasma processing apparatus 1 may further include a second high-frequency power source 64 for applying high-frequency (LF) power for ion attraction. The second high-frequency power source 64 is configured to generate high-frequency (LF) power. The high-frequency (LF) power has a frequency primarily suitable for attracting ions to the substrate W, for example, a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, the high-frequency (LF) power source may be a pulsed voltage having a rectangular waveform.

[0108] The second high-frequency power supply 64 is electrically connected to the lower electrode 18 via a matching box 68. The matching box 68 includes a matching circuit. The matching circuit of the matching box 68 is configured to match the impedance of the load side (lower electrode side) of the second high-frequency power supply 64 with the output impedance of the second high-frequency power supply 64.

[0109] The plasma processing apparatus 1 may further include a second control unit 80. The second control unit 80 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, a signal input / output interface, and the like. The second control unit 80 controls various components of the plasma processing apparatus 1. In the second control unit 80, an operator can use an input device to input commands to manage the plasma processing apparatus 1. In addition, in the second control unit 80, a display device can be used to visually display the operating status of the plasma processing apparatus 1. Furthermore, a control program and processing scheme data are stored in the storage unit of the second control unit 80. The control program is executed by the processor of the second control unit 80 to perform various processes in the plasma processing apparatus 1. The processor of the second control unit 80 executes the control program and controls various components of the plasma processing apparatus 1 according to the processing scheme data, thereby performing various process processes, such as a plasma processing method, in the plasma processing apparatus 1.

[0110] In the plasma processing apparatus 1 having the above-described structure, examples of components used in the substrate processing apparatus (plasma processing apparatus 1) include the chamber 10, the upper electrode 30, the shield 46, the baffle 48, and the like. However, the components used in the substrate processing apparatus are not limited thereto, and may be components exposed to the plasma in the chamber 10.

[0111] It should be understood that the components, component manufacturing methods, and substrate processing apparatus disclosed in one embodiment of the present invention are illustrative in all respects and are not intended to be limiting. The above-described embodiment may be modified and improved in various ways without departing from the scope of the appended claims and their gist. The matters described in the various embodiments described above may also be adopted in other configurations within the scope of non-inconsistency and may be combined within the scope of non-inconsistency.

[0112] For example, a plasma processing apparatus has been described as an example of a substrate processing apparatus. However, a substrate processing apparatus is not limited to a plasma processing apparatus as long as it performs a predetermined process (e.g., film forming process, etching process, etc.) on a substrate.

[0113] Furthermore, the substrate processing apparatus may be an etching apparatus, a film forming apparatus, an ashing apparatus, a doping apparatus, etc. For example, the substrate processing apparatus may be an apparatus for forming an ITO film by sputtering or an apparatus for forming a metal-containing film by MOCVD.

[0114] The substrate processing device of the present invention can be applied to any type of device including atomic layer deposition (ALD) device, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma.

Claims

1. A method for manufacturing a silicon component having a silicon particle size of 1 μm or less for a substrate processing device, characterized in that: include: (a) supplying a powder material of aluminum containing silicon based on three-dimensional data and depositing the powder material on a substrate; (b) after step (a), a step of melting the supplied powder material on the substrate using a laser; (c) after step (b), a step of rapidly solidifying the powder material melted in step (b); and (d) Determining whether to repeat the steps (a), (b), and (c).

2. The method for manufacturing a silicon component according to claim 1, wherein: The method further includes a step of heat treating the silicon component.

3. The method for manufacturing a silicon component according to claim 1 or 2, wherein: The method further includes anodizing the surface of the silicon member.

4. The method for manufacturing a silicon component according to claim 1 or 2, wherein: If it is determined in (d) that the process is to be repeated, (a), (b), and (c) are repeated.

5. The method for manufacturing a silicon component according to claim 1 or 2, wherein: In the above-mentioned (c), the rapid solidification is performed for 1 second or less.

6. The method for manufacturing a silicon component according to claim 1 or 2, wherein: The silicon component is any one of a chamber in a substrate processing apparatus, a mounting table for mounting a substrate, an upper electrode, a baffle, and a shielding member.

7. A shaping device, characterized in that: include: a chamber having a laser-transmitting window; A liftable workbench disposed in the chamber; a plurality of blades movable on the work table; a driving portion for driving the plurality of blades; a raw material storage portion for inserting raw materials between the plurality of blades; a light source capable of irradiating laser light toward the raw material through the laser transmission window; a storage unit for storing 3D data; and Control Department, The control unit is capable of performing: (a) supplying a silicon-containing aluminum powder material from the raw material storage portion based on the three-dimensional data, and depositing the powder material on the substrate on the workbench; (b) after step (a), a step of melting the supplied powder material on the substrate using a laser; (c) after step (b), a step of rapidly solidifying the powder material melted in step (b); and (d) Determining whether to repeat the steps (a), (b), and (c).

8. The molding device according to claim 7, characterized in that: The control unit can further execute a step of heat-treating the silicon component.

9. The molding device according to claim 7 or 8, characterized in that: When the control unit determines that the steps are to be repeated in (d), the control unit repeats (a), (b), and (c).

10. The molding device according to claim 7 or 8, characterized in that: The control unit performs the rapid solidification for 1 second or less in the (c).

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