Substrate processing apparatus

Abstract

The present application provides a kind of substrate processing device.The substrate processing device controls the temperature of rotating substrate with high precision.The substrate processing device includes: a rotating table, which holds a substrate; a rotating drive portion, which rotates the rotating table around an axis of rotation; at least one electric heater, which is provided on the rotating table; at least one power receiving coil, which is provided on the rotating table and is electrically connected to the electric heater; at least one power supply coil, which is arranged to be spaced apart from the power receiving coil and can face the power receiving coil in the direction of the axis of rotation; and a high-frequency power supply unit, which supplies high-frequency power to the power supply coil.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus. BACKGROUND

[0002] In a manufacturing process of a semiconductor device, an etching process of etching a surface of a substrate by supplying a chemical liquid to the surface of the substrate while heating and rotating the substrate is included. In this process, there is a demand to sufficiently heat the substrate and rotate it at a high speed, and a substrate processing apparatus configured for this purpose is disclosed in Patent Literature 1. The substrate processing apparatus has a rotary chuck portion in which a disc-shaped heating plate is provided. A coil housing having a circular ring shape is provided near a lower portion of the rotary chuck portion. A plurality of coils are provided inside the coil housing. An alternating current is supplied from a coil power supply device to the coils, and thereby an alternating magnetic field is generated. The heating plate is heated by an eddy current generated in the heating plate due to an obstruction of a change in the alternating magnetic field, and the substrate is heated by the heat. An electromagnetic shield plate provided in close contact with an upper surface of the heating plate blocks electromagnetic waves generated by the coils, and prevents damage to circuit elements formed on the substrate.

[0003] Patent Literature 1: Japanese Patent Application Laid-Open No. 2007-335709 SUMMARY

[0004] Problem to be solved by the invention

[0005] The present disclosure provides a technology capable of highly accurately controlling a temperature of a substrate rotated.

[0006] Solution to the problem

[0007] A technical solution of a substrate processing apparatus includes a rotary table that holds a substrate, a rotary drive portion that rotates the rotary table about a rotation axis, at least one electric heater provided to the rotary table, at least one power receiving coil provided to the rotary table and electrically connected to the electric heater, at least one power supply coil provided to be spaced apart from the power receiving coil and capable of facing the power receiving coil in a direction of the rotation axis, and a high-frequency power supply unit that supplies high-frequency electric power to the power supply coil.

[0008] Effects of the invention

[0009] According to the present disclosure, a temperature distribution of a substrate can be highly accurately controlled. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a longitudinal sectional view of a substrate processing system to which an embodiment of a substrate processing apparatus relates.

[0011] Figure 2 is a longitudinal sectional view of a substrate processing system to which an embodiment of a substrate processing apparatus relates. Figure 1A schematic longitudinal sectional view of the processing unit of the substrate processing system.

[0012] Figure 3 It is set at Figure 2 A top view illustrating the heating zone of the chuck plate of the processing unit.

[0013] Figure 4 This diagram illustrates an example of a planar configuration of the receiving coil and the supply coil.

[0014] Figure 5 This diagram illustrates the frequency of the high-frequency power supplied to the power supply coil.

[0015] Figure 6 This diagram illustrates an example of another planar configuration of the power supply coil.

[0016] Figure 7 This diagram illustrates another example of a planar configuration of the receiving coil and the supply coil. Detailed Implementation

[0017] One embodiment of the substrate processing apparatus is described with reference to the accompanying drawings.

[0018] Figure 1 This is a diagram showing a schematic structure of the substrate processing system according to this embodiment. Hereinafter, in order to clarify the positional relationships, the X-axis, Y-axis and Z-axis are defined as mutually orthogonal, and the positive direction of the Z-axis is set as the vertical upward direction.

[0019] like Figure 1 As shown, the substrate processing system 1 includes an infeed / outfeed station 2 and a processing station 3. The infeed / outfeed station 2 and the processing station 3 are arranged adjacent to each other.

[0020] The infeed / outfeed station 2 includes a carrier placement section 11 and a transport section 12. Multiple carriers C are placed in the carrier placement section 11, and these multiple carriers C hold multiple substrates, or in this embodiment, semiconductor wafers (hereinafter referred to as wafers W), in a horizontal state.

[0021] The transport section 12 is disposed adjacent to the carrier placement section 11, and includes a substrate transport device 13 and a transfer section 14 inside. The substrate transport device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 13 is movable in the horizontal and vertical directions and can rotate about the vertical axis. It uses the wafer holding mechanism to transport the wafer W between the carrier C and the transfer section 14.

[0022] The processing station 3 is arranged adjacent to the conveying section 12. The processing station 3 includes the conveying section 15 and multiple processing units 16. The multiple processing units 16 are arranged on both sides of the conveying section 15.

[0023] The transport section 15 has a substrate transport device 17 inside. The substrate transport device 17 has a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 17 is movable in the horizontal direction and the vertical direction and rotatable about a vertical axis, and transports the wafer W between the handover section 14 and the processing unit 16 using the wafer holding mechanism.

[0024] The processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17.

[0025] In addition, the substrate processing system 1 has a control device 4. The control device 4 is, for example, a computer, and has a control section 18 and a storage section 19. A program for controlling various processes performed in the substrate processing system 1 is stored in the storage section 19. The control section 18 controls the operation of the substrate processing system 1 by reading out and executing the program stored in the storage section 19.

[0026] Further, the above program can be recorded in a storage medium that can be read by a computer, and installed from the storage medium to the storage section 19 of the control device 4. As the storage medium that can be read by a computer, there are, for example, a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disk (MO), a memory card, and the like.

[0027] In the substrate processing system 1 configured as described above, first, the substrate transport device 13 of the in-out station 2 takes out the wafer W from the carrier C placed on the carrier placement section 11, and places the taken-out wafer W on the handover section 14. The wafer W placed on the handover section 14 is taken out from the handover section 14 by the substrate transport device 17 of the processing station 3, and fed to the processing unit 16.

[0028] The wafer W fed to the processing unit 16 is processed by the processing unit 16, and then taken out from the processing unit 16 by the substrate transport device 17 and placed on the handover section 14. Then, the processed wafer W placed on the handover section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transport device 13.

[0029] Next, the configuration of the processing unit 16 will be described with reference to FIG. 2. Figure 2 The configuration of the processing unit 16 will be described.

[0030] The processing unit 16 has a substrate holding and rotating mechanism 30 with a heating mechanism. The substrate holding and rotating mechanism 30 has a rotating stage 310, i.e., a substrate holding section, which holds the wafer W in a horizontal posture, and an electric motor (a rotating drive section) 350 which rotates the rotating stage 310 about a vertical axis (a rotating axis Ax). In addition, the substrate holding and rotating mechanism 30 has a gas passage 354 which supplies a processing gas to the wafer W. Figure 2 In FIG. 1, the rotating axis Ax and the gas passage 354 described later are illustrated in an overlapping manner.

[0031] The rotary table 310 has, from top to bottom, a chuck plate 312, electric heaters 314 and 316, a ferrite plate 318, and receiving coils 320 and 322. A ferrite ring 324 is provided between the receiving coils 320 and 322.

[0032] The chuck plate 312 is an integrally disk-shaped component with a radius larger than that of the wafer W to be processed. The chuck plate 312 can be formed, for example, from thermally conductive ceramic. A groove 313 is formed on the upper surface of the chuck plate 312. By applying an attractive force to the groove 313 while the wafer W is placed on the upper surface of the chuck plate 312, the wafer W is attracted to the upper surface of the chuck plate 312.

[0033] Electric heaters 314 and 316 can be, for example, resistance heaters. Polyimide heaters can be, for example, used as resistance heaters. Electric heaters 314 and 316 are disposed on the lower surface of the chuck plate 312.

[0034] like Figure 2 and Figure 3 As shown, an electric heater 314 is disposed in the first annular region A1 at the center of the lower surface of the chuck plate 312. The electric heater 314 mainly heats region A1 of the chuck plate 312. Hereinafter, the electric heater 314 is also referred to as the "inner heater 314".

[0035] An electric heater 316 is located in the second annular region A2 on the periphery (outer than the center) of the lower surface of the chuck plate 312. The electric heater 316 primarily heats region A2 of the chuck plate 312. Hereinafter, the electric heater 316 is also referred to as the "outer heater 316".

[0036] In addition, Figure 3 In this context, "r1" refers to the average of the inner and outer radii of region A1, and is called the first distance representing the distance from the axis of rotation Ax to region A1. "r2" refers to the average of the inner and outer radii of region A2, and is called the second distance representing the distance from the center of rotation Ax to region A2. r2 is greater than r1.

[0037] The area of ​​the chuck plate 312 that covers an electric heater is also referred to as the "heating zone". In this embodiment, two heating zones are provided (an inner heating zone (A1) and an outer heating zone (A2)). Furthermore, the heat generated by the inner heater 314 also heats the outer heating zone, and the heat generated by the outer heater 316 also heats the inner heating zone. However, as long as the chuck plate 312 is formed sufficiently thin, this situation can be ignored for temperature control.

[0038] In the case where the polyimide heater is used as the electric heater 314, 316, the electric heater 314, 316 can be formed using the inner heater pattern and the outer heater pattern formed on the common polyimide substrate. In Figure 3 not illustrated in FIG. 10, but the heater patterns of the electric heaters 314, 316 are formed of electric resistance heating elements that extend in a meandering manner within the regions Al, A2, respectively.

[0039] Instead of the polyimide heater, other forms of electric heaters can also be used, such as ceramic heaters. In the case where the ceramic heater is used, the electric resistance heating elements can be built into the chuck plate 312.

[0040] The power receiving coils 320, 322 can be configured as thin (circular) coils having axes (axes of the coils) extending in the vertical direction. The axes of the above-described two coils 320, 322 substantially coincide with the rotational axis Ax. The power receiving coil 320 is provided at the central portion of the lower surface of the disc-shaped ferrite plate 318, and is hereinafter also referred to as the "inner power receiving coil 320". The power receiving coil 322 is provided at the peripheral portion of the lower surface of the ferrite plate 318, and is hereinafter also referred to as the "outer power receiving coil 322".

[0041] A ferrite ring 324 in the shape of a circular ring is provided between the inner power receiving coil 320 and the outer power receiving coil 322.

[0042] When the rotary stage 310 is viewed from directly above, the arrangement regions of the power receiving coils 320, 322 substantially coincide with the first annular region Al and the second annular region A2 in which the electric heaters 314, 316 are arranged.

[0043] In the case where the processing unit 16 is configured to process 12-inch wafers, as one example, the inner diameter of the inner power receiving coil 320 can be set to about 30 mm, the outer diameter can be set to about 70 mm, and the inner diameter of the outer power receiving coil 322 can be set to about 70 mm (+ the width of the ferrite ring), and the outer diameter can be set to about 140 mm.

[0044] The winding of the inner power receiving coil 320 is electrically connected to the inner heater 314. The winding of the outer power receiving coil 322 is electrically connected to the outer heater 316.

[0045] The upper end of the rotational shaft 352 of the electric motor 350 is coupled to the central portion of the lower surface of the chuck plate 312. The chuck plate 312 is integrated with the electric heaters 314, 316, the ferrite plate 318, the power receiving coils 320, 322, and the ferrite ring 324. Thus, by causing the electric motor 350 to operate, the members 312, 314, 316, 318, 320, 322, and 324 are caused to rotate integrally about the vertical axis (the rotational axis Ax).

[0046] A gas passage 354 for transmitting an attractive force to the grooves 313 of the upper surface of the chuck plate 312 is formed inside the rotary shaft 352 of the electric motor 350. The gas passage 354 is connected to a vacuum pump 356 and a gas supply source 358 via a rotary joint 355 mounted at the lower end of the rotary shaft 352. In order to select only one of the vacuum pump 356 and the gas supply source 358, a switching valve device 360, for example, composed of a three-way valve, is provided in the gas passage 354.

[0047] By suctioning the inside space of the grooves 313 with the vacuum pump 356, the wafer W placed on the chuck plate 312 is adsorbed to the chuck plate 312. By supplying an adsorption release gas, for example, nitrogen, from the gas supply source 358 to the grooves 313, the adsorption of the wafer W to the chuck plate 312 is released.

[0048] The inner side power supply coil 402 and the outer side power supply coil 404 are provided with a gap G (gap G) in the vertical direction from the inner side power receiving coil 320 and the outer side power receiving coil 322, respectively, below the inner side power receiving coil 320 and below the outer side power receiving coil 322. The inner side power supply coil 402 and the outer side power supply coil 404 are thin (circular) coils having an axis (axis of the coil) extending in the vertical direction. The axes of the above two coils 402, 404 substantially coincide with the rotational axis Ax.

[0049] The above gap G is preferably 10 mm or less, and more preferably 5 mm or less. From the viewpoint of power supply efficiency, the size of the gap G is preferably a smaller size. However, the minimum value of the size of the gap G is limited from the viewpoint of the manufacturing accuracy of the rotary table 310 as a rotating body and the prevention of collision with the power supply member 400 due to vibration at the time of operation and the like.

[0050] The inner side power supply coil 402 and the outer side power supply coil 404 are provided on the upper surface of a disc-shaped ferrite plate 406. In the case of viewing the rotary table 310 from directly above, the arrangement region of the power supply coils 402, 404 coincides or substantially coincides with the arrangement region of the power receiving coils 320, 322. Thus, regardless of the rotational phase (angular position) of the chuck plate 312, the inner side power supply coil 402 always faces the inner side power receiving coil 320 in the direction of the rotational axis Ax, and the outer side power supply coil 404 always faces the outer side power receiving coil 322 in the direction of the rotational axis Ax.

[0051] A ferrite ring 408 in a circular ring shape is provided between the inner side power supply coil 402 and the outer side power supply coil 404.

[0052] For the sake of simplicity of expression, the assembly of the inner power supply coil 402, the outer power supply coil 404, the ferrite plate 406, and the ferrite ring 408 will also be referred to as "power supply member 400" hereinafter.

[0053] Figure 4 The arrangement of the inner power supply coil 402 and the outer power supply coil 404 on the ferrite plate 406 is the same as that of the inner power receiving coil 320 and the outer power receiving coil 322 on the ferrite plate 318.

[0054] As shown in FIG. 4, the inner power supply coil 402 and the outer power supply coil 404 are arranged on the ferrite plate 406. The inner power supply coil 402 and the outer power supply coil 404 are arranged on the ferrite plate 406 so as to face each other with the ferrite plate 406 interposed therebetween. The inner power supply coil 402 and the outer power supply coil 404 are arranged on the ferrite plate 406 so as to face the inner power receiving coil 320 and the outer power receiving coil 322, respectively. Figure 2 As shown in FIG. 4, the inner power supply coil 402 and the outer power supply coil 404 are arranged on the ferrite plate 406. The inner power supply coil 402 and the outer power supply coil 404 are arranged on the ferrite plate 406 so as to face each other with the ferrite plate 406 interposed therebetween. The inner power supply coil 402 and the outer power supply coil 404 are arranged on the ferrite plate 406 so as to face the inner power receiving coil 320 and the outer power receiving coil 322, respectively. As shown in FIG. 4, high-frequency electric power of a frequency of, for example, 1 kHz to 4 MHz or so is supplied from the high-frequency power supply unit 410 to the inner power supply coil 402 and the outer power supply coil 404. The high-frequency power supply unit 410 has an inner coil power supply section 412 for supplying high-frequency electric power to the inner power supply coil 402 and an outer coil power supply section 414 for supplying high-frequency electric power to the outer power supply coil 404. By supplying high-frequency electric power to the inner power supply coil 402 and the outer power supply coil 404, electric currents flow in the inner power receiving coil 320 and the outer power receiving coil 322 under the action of electromagnetic induction. Due to the electric currents, the inner heater 314 and the outer heater 316 generate heat. As above, the inner heater 314 and the outer heater 316 are wirelessly supplied with electric power.

[0055] For the sake of simplicity of expression, the wireless power supply system to which the inner power supply coil 402 and the inner power receiving coil 320 belong will also be referred to as "inner power supply channel", and the wireless power supply system to which the outer power supply coil 404 and the outer power receiving coil 322 belong will also be referred to as "outer power supply channel" hereinafter.

[0056] The inner coil power supply section 412 and the outer coil power supply section 414 supply high-frequency electric power of mutually different frequencies. The resonance frequency of a circuit (resonance circuit) including the inner power receiving coil 320 and the inner heater 314 substantially coincides with the frequency of the high-frequency electric power supplied by the inner coil power supply section 412. In addition, the resonance frequency of a circuit (resonance circuit) including the outer power receiving coil 322 and the outer heater 316 substantially coincides with the frequency of the high-frequency electric power supplied by the outer coil power supply section 414. Thus, it is possible to prevent mutual interference between the inner power supply channel and the outer power supply channel.

[0057] Furthermore, the power receiving coils 320, 322 mainly provide inductance L in the resonance circuit, and the electric heaters 314, 316 mainly provide resistance R in the resonance circuit. In order to adjust the resonance frequency of the resonance circuit, a capacitor having capacitance C can be provided in the above-described circuit. The capacitor is preferably a fixed-capacitance capacitor. Adjustment of the resonance frequency can be performed in accordance with the principle of a known LCR resonance circuit.

[0058] Figure 5 The relationship between the frequency and the output voltage of the power receiving coil is shown schematically. For example, the circuit including the inner power receiving coil 320 can be configured to have the characteristic shown by the leftmost curve, and the circuit including the outer power receiving coil 322 can be configured to have the characteristic shown by the second curve from the left. As shown, in order to avoid characteristics that repeat each other so that the mutual interference between the power supply channels becomes a problem, it is preferable that the frequencies at which the output voltage peaks, i.e., the resonance frequencies, be sufficiently separated. In the case where a number of power supply channels more than two are provided, design can also be made based on the same viewpoint. Figure 5

[0059] The ferrite functions as an electromagnetic shield. Therefore, for the electronic devices that constitute the processing unit 16, which are located above the ferrite plate 318 and below the ferrite plate 406, it is possible to prevent the occurrence of operation malfunctions due to electromagnetic waves. In addition, it is possible to prevent the above-mentioned electronic devices or the semiconductor devices that have been formed on the wafer W from being damaged due to abnormal heating caused by high-frequency induction heating.

[0060] By providing the ferrite rings 324, 408, it is possible to prevent the mutual interference between the inner power supply channel and the outer power supply channel. Thereby, it is possible to separately control the heat generation amount of the inner heater 314 and the heat generation amount of the outer heater 316 with high precision.

[0061] Since it is difficult for the ferrite to flow eddy currents, abnormal heating caused by high-frequency induction heating does not occur in the ferrite plates 318, 406 and the ferrite rings 324, 408, and in addition, it is possible to suppress power loss to be low, and therefore the power supply efficiency is also improved. For example, it is possible to confirm by experiment that a power supply efficiency of about 90% is obtained.

[0062] Non-contact temperature sensors 52, 54 are provided above the chuck plate 312 of the turntable 310. The non-contact temperature sensors 52, 54 can employ, for example, IR (infrared) temperature sensors. The temperature sensor 52 can detect the temperature of the central portion of the upper surface of the chuck plate 312 or the temperature of the central portion of the wafer W placed thereon, and is also referred to as an "inner temperature sensor 52". The temperature sensor 54 can detect the temperature of the peripheral portion of the upper surface of the chuck plate 312 or the temperature of the peripheral portion of the wafer W placed thereon, and is also referred to as an "outer temperature sensor 54".

[0063] ​The operation of the high-frequency power supply unit 410 is controlled using the temperature regulator 420. The temperature regulator 420 is inputted with the detected temperature detected by the inner temperature sensor 52 and the outer temperature sensor 54. The inner temperature sensor 52 and the temperature regulator 420, and the outer temperature sensor 54 and the temperature regulator 420 can be wired. The temperature regulator 420 performs feedback control of the power supplied from the inner coil power supply section 412 to the inner power supply coil 402 based on the deviation between the detected temperature obtained by the inner temperature sensor 52 and the set temperature. The temperature regulator 420 performs feedback control of the power supplied from the outer coil power supply section 414 to the outer power supply coil 404 based on the deviation between the detected temperature obtained by the outer temperature sensor 54 and the set temperature.

[0064] The feedback control can be, for example, PID control, or on / off control. As the on / off control, for example, hysteresis control can be used, which turns off the power supply when the detected value of the temperature sensor 52, 54 exceeds an off set temperature (for example, the target temperature + 2°C), and turns on the power supply when the detected value of the temperature sensor is lower than an on set temperature (for example, the target temperature - 2°C). The control of the supplied power in the PID control can be performed using, for example, duty control (which is a control on a micro level with on / off operation, but is different from the above-mentioned on / off control) such as PWM (pulse width modulation).

[0065] Whether the hysteresis (on / off) control is performed or the duty control is performed, the on / off of the power supply is preferably performed near zero volts of the AC load voltage. Thereby, generation of switching noise and inrush current can be suppressed.

[0066] Instead of the above-mentioned non-contact temperature sensors 52, 54, contact temperature sensors (not shown) built in the chuck plate 312 can be used. In this case, the detected temperature of the contact temperature sensors can be transmitted to the temperature regulator 420 using a wireless transmission device that operates using the power obtained from at least one of the inner power receiving coil 320 and the outer power receiving coil 322.

[0067] However, the rotary table 310 that rotates at a relatively high speed and is located in a strong electromagnetic field preferably avoids the arrangement of devices that perform electrical operations such as switching, control, transmission / reception, etc. (for example, SSR, MPU, etc.) or devices that perform mechanical operations (actuators) as much as possible.

[0068] The processing unit 16 is provided with a processing fluid supply portion 60 that supplies a processing fluid such as a chemical liquid (etching liquid, cleaning liquid, etc.), a rinse liquid, a drying solvent, a drying gas, etc. to the surface (processing target surface) of the wafer W held by the substrate holding rotation mechanism 30. The processing fluid supply portion 60 has one or more nozzles 62, one or more nozzle arms 64 (nozzle moving mechanism) that carry and move the nozzles 62, and a processing fluid supply mechanism 66 that supplies the processing fluid to the nozzles 62.

[0069] The nozzle arm 64 is capable of moving the carried nozzle 62 between a processing position above the center portion of the wafer W and a standby position outside the wafer W.

[0070] Details are not shown, but the processing fluid supply mechanism 66 is constituted by a pipe (line) connected to a processing fluid supply source such as a factory power source, a fluid tank, a fluid bottle, etc., a flow control device (on-off valve, flow meter, flow control valve, etc.) sandwiched in the pipe, etc.

[0071] The processing unit 16 has a liquid receiving cup 70 provided around the substrate holding rotation mechanism 30 that recovers the processing liquid scattered from the rotating wafer W. The liquid receiving cup 70 has a gas discharge port 72 for discharging the inside space of the liquid receiving cup 70 and a liquid discharge port 74 for discharging the liquid from the liquid receiving cup 70.

[0072] The processing unit 16 has Figure 2 a chamber (housing) not shown in the figure in which the structural elements shown in the figure are arranged. An FFU (fan filter unit) can be provided at the top of the chamber. Figure 2

[0073] In order to protect the structural elements of the rotation table 310 and the structural elements of the power supply member 400 from the influence of corrosive atmosphere gas (for example, atmosphere gas derived from a chemical liquid), an upper protection cover 81 and a lower protection cover 82 are provided.

[0074] The upper protection cover 81 covers the periphery of the rotation table 310 that is a rotating body, and the lower protection cover 82 covers the periphery of the power supply member 400 that is a non-rotating body. As Figure 2 As shown schematically in the figure, the lower end of the upper protection cover 81 and the upper end of the lower protection cover 82 are configured to constitute a non-contact seal 84, for example, a labyrinth seal. Thereby, the upper protection cover 81 and the lower protection cover 82 can be relatively rotated, and the intrusion of mist of the processing liquid from the space outside the upper protection cover 81 and the lower protection cover 82 to the space inside can be prevented.

[0075] ​Gas, such as nitrogen, can be supplied through the space inside the upper protective cover 81 and the lower protective cover 82 to increase the internal pressure of the space and prevent the mist of the treatment liquid from entering from the space outside the upper protective cover 81 and the lower protective cover 82.

[0076] like Figure 2 As shown, the lower end of the lower protective cover 82 can also be connected to the liquid receiving cup 70.

[0077] The structural elements of the rotary table 310 and the power supply component 400 each have one or more, preferably three or more, lifting pin holes 92 and 94. Figure 2 Only one of each is shown in the image. Figure 2 As shown in the structural example, when the lifting pin holes 92 and 94 pass through ferrite, eddy currents of a problematic size will not be generated due to magnetic flux leakage through holes of the same size as the lifting pin holes 92 and 94. In the case of a structure where the lifting pin holes 92 and 94 pass through portions without ferrite, it is preferable to surround at least the outer periphery of the lifting pin holes with a magnetic material (ferrite) to suppress the influence of eddy currents. Lifting pins 98, which are raised and lowered using a linear actuator 96, such as a cylinder, are inserted into each lifting pin hole 94 of the power supply component 400. When the rotary table 310 is positioned at a specific angular position (rotation phase) to align the lifting pin holes 92 of the rotary table 310 and the lifting pin holes 94 of the power supply component 400, the lifting pins 98 can be raised and lowered through the lifting pin holes 92 of the rotary table 310.

[0078] By raising the top of the lifting pin 98 to a position above the upper surface of the chuck plate 312, the wafer W placed on the chuck plate 312 can be lifted. In this state, the substrate transport device 17 (see reference 17) can be used to lift the wafer W. Figure 1 The wafer W is transferred between the arm of the chuck plate 312 and the lifting pin 98. In addition, by lowering the top of the lifting pin 98 that supports the wafer W to a position below the upper surface of the chuck plate 312, the wafer W can be placed on the upper surface of the chuck plate 312.

[0079] A brief explanation of the liquid processing of wafer W performed by processing unit 16.

[0080] The wafer W introduced into the processing unit 16 is attracted to the chuck plate 312. In this state, the wafer W held by the chuck plate 312 is rotated by operating the motor 350. At this time, the inner power supply coil 402 and the outer power supply coil 404 are supplied with power from the high-frequency power supply unit 410. Thus, the current generated by electromagnetic induction flows from the inner power receiving coil 320 to the inner heater 314 and from the outer power receiving coil 322 to the outer heater 316. The temperature of the central portion of the wafer W heated by the inner heater 314 and the temperature of the peripheral portion of the wafer W heated by the outer heater 316 are controlled to desired values, respectively, by the feedback control.

[0081] The central portion of the surface of the rotating wafer W subjected to temperature control is supplied with a processing liquid such as a chemical liquid from the nozzle 62 of the processing fluid supply unit 60 to the surface of the wafer W, whereby the surface of the wafer W is subjected to chemical liquid processing. By moving the nozzle 62, the landing point of the chemical liquid sprayed from the nozzle 62 on the wafer surface can be moved (e.g., reciprocated between the central portion and the peripheral portion of the wafer).

[0082] After the chemical liquid processing is completed, the wafer W is supplied with a rinse liquid such as DIW (pure water) from the processing fluid supply unit 60, whereby rinse processing is performed, and then, drying processing (e.g., spin-dry drying processing) of the wafer W can be performed. Between the rinse processing and the drying processing, drying fluid replacement processing of replacing the rinse liquid with a drying fluid such as IPA (isopropyl alcohol) can be performed. When the drying processing is performed, the wafer W can be simultaneously supplied with IPA and a drying gas such as nitrogen.

[0083] The heating of the inner heater 314 and the outer heater 316 can be performed only when the chemical liquid processing is performed. To promote drying, the heating of the inner heater 314 and the outer heater 316 can be performed when the drying processing is performed (i.e., when the wafer W is not supplied with a processing liquid).

[0084] According to the above-described embodiment, the wafer W can be heated by the electric heater by supplying power to the power receiving coil rotating together with the chuck plate holding the wafer W in a non-contact manner from the non-rotating power supply coil (power feeding coil). A complicated mechanism for supplying power to the rotating electric heater (e.g., a power supply mechanism using a rolling bearing, an elastic snap ring, or the like) is not required.

[0085] According to the above-described embodiment, the wafer W can be heated via the chuck plate 312 regardless of whether the rotary table 310 (substrate holding portion) is rotated or not, and regardless of the rotation speed. In the case where the liquid treatment of the wafer W is performed at a high temperature, the liquid treatment of the wafer W can be performed while the wafer W is rotated, and thus the treatment of the wafer W can be performed while the reaction product is removed from the surface of the wafer W, and the quality of the liquid treatment can be improved.

[0086] According to the above-described embodiment, the liquid treatment can also be performed while maintaining the temperature of the interface between the surface of the wafer W and the liquid at a high level by supplying the liquid at normal temperature to the wafer W that is heated and rotated. In this case, the liquid does not need to be heated before being supplied, and thus the consumption of the liquid can be suppressed.

[0087] According to the above-described embodiment, the temperature of the wafer W can be controlled with high precision by controlling the amount of heat generated by the heaters 314, 316, and further controlling the temperature of the wafer W, since the current that is controlled is supplied to the inner and outer heaters 314, 316 via the inner and outer power receiving coils 320, 322. According to the above-described embodiment, the temperature and temperature distribution of the wafer W can be controlled with higher precision, for example, compared to the case where the metal heating member provided in the chuck portion is heated by high-frequency induction heating. Thus, the quality of the liquid treatment can be improved.

[0088] According to the above-described embodiment, the temperature of the center portion of the wafer and the temperature of the peripheral portion of the wafer can be controlled separately by the inner and outer heaters 314, 316. Thus, the temperature of the interface between the surface of the wafer W and the treatment liquid can be uniformized in the plane of the wafer W by making the amount of heat generated by the heater (314 or 316) corresponding to the region of the wafer W that has a tendency to decrease in temperature higher than the amount of heat generated by the other heater. Thus, the in-plane uniformity of the treatment can be improved.

[0089] Further, as a cause of the temperature difference between the center portion and the peripheral portion of the wafer, the following causes are exemplified, for example:

[0090] (1) The peripheral portion of the wafer W is easily cooled since the relative speed between the ambient gas (e.g., air) around the wafer W and the surface of the wafer W is higher as the peripheral portion goes to the peripheral portion where the radial distance r x angular velocity ω with respect to the center of rotation of the wafer is higher;

[0091] (2) In the case where the treatment liquid at a high temperature is supplied to the center portion of the wafer W whose temperature is lower than the temperature of the treatment liquid, the treatment liquid spreads toward the peripheral portion of the wafer W while being absorbed heat by the wafer W, and thus the temperature of the treatment liquid decreases as it approaches the peripheral portion;

[0092] (3) In a case where a treatment liquid having a higher volatility is supplied to the center portion of the wafer W, the closer to the peripheral portion, the more heat is absorbed from the wafer W due to vaporization of the treatment liquid.

[0093] Next, a first modified embodiment of the above-described embodiment will be described. In the first modified embodiment, as shown in FIG. 4, a large single circular-shaped power supply coil 402A is provided on the upper surface of the ferrite plate 406 with the rotational axis Ax as the center. Two power receiving coils 320, 322 are provided on the lower surface of the ferrite plate 318 in the same manner as described above with reference to FIG. 3. The power receiving coils 320, 322 are electrically connected to the electric heaters 314, 316, respectively. Figure 6 Figure 3 The power receiving coils 320, 322 are electrically connected to the electric heaters 314, 316, respectively.

[0094] In a case where the rotary table 310 is viewed from directly above, the arrangement region of the power receiving coils 320, 322 is included in the arrangement region of the large power supply coil (first power supply coil) 402A. That is, the large power supply coil 402A is arranged so as to face both of the power receiving coils 320, 322 regardless of the rotational phase of the rotary table.

[0095] In the first modified embodiment, the high-frequency power supply unit 410 is configured as a high-frequency power supply unit whose output frequency is variable. That is, the high-frequency power supply unit 410 is configured so as to be able to selectively supply to the power supply coil 402A a frequency (substantially the same frequency) corresponding to the resonance frequency (first resonance frequency) of the resonance circuit to which the power receiving coil 320 belongs and a frequency corresponding to the resonance frequency (second resonance frequency) of the resonance circuit to which the power receiving coil 322 belongs. In this case, the high-frequency power supply unit 410 can have a first coil power supply section 412 which fixedly outputs high-frequency power of the first resonance frequency, a second coil power supply section 414 which fixedly outputs high-frequency power of the second resonance frequency, and a switch which electrically connects only one of the first coil power supply section 412 and the second coil power supply section 414 to the power supply coil 402A. Alternatively, the high-frequency power supply unit 410 can have a single coil power supply section whose output frequency is variable. The high-frequency power supply unit 410 can also have a zero-crossing circuit.

[0096] By switching the frequency output from the high-frequency power supply unit 410, the electric heaters 314, 316 can be selectively caused to generate heat. If the frequency output from the high-frequency power supply unit 410 is switched at high speed, the electric heaters 314, 316 can be caused to generate heat substantially simultaneously. By adjusting the ratio of the energization time for the electric heaters 314, 316, the ratio of the heat generation amount of the electric heaters 314, 316 can be controlled.

[0097] Next, a second modified embodiment will be described. In the second modified embodiment, as shown in FIG. 5, a large single circular-shaped power supply coil 402B is provided on the upper surface of the ferrite plate 406 with the rotational axis Ax as the center. Two power receiving coils 320, 322 are provided on the lower surface of the ferrite plate 318 in the same manner as described above with reference to FIG. 3. Figure 7 ​As shown, there are a plurality (8 in the illustrated example) of inner power receiving coils 320S and a plurality (8 in the illustrated example) of outer power receiving coils 322S.

[0098] The plurality of inner power receiving coils 320S are identical to the inner power receiving coil 320 described above and are arranged in the annular region Al at a relatively small distance (first distance r1) from the rotation axis Ax. In addition, the plurality of inner power receiving coils 320S are respectively arranged at different positions in the circumferential direction within the annular region Al at equal intervals in the circumferential direction.

[0099] The plurality of outer power receiving coils 322S are identical to the outer power receiving coil 322 described above and are arranged in the annular region A2 at a relatively large distance (second distance r2) from the rotation axis Ax. The plurality of outer power receiving coils 322S are respectively arranged at different positions in the circumferential direction within the annular region A2 at equal intervals in the circumferential direction.

[0100] In this second modified embodiment, one electric heater (not shown) is electrically connected to one inner power receiving coil 320S, forming a resonance circuit. The resonance frequencies of the resonance circuits belonging to different inner power receiving coils 320S are different from each other. One electric heater (not shown) is electrically connected to one outer power receiving coil 322S, forming a resonance circuit. The resonance frequencies of the resonance circuits belonging to different outer power receiving coils 322S are different from each other.

[0101] In this second modified embodiment, a plurality of recesses of a shape identical to the shapes of the power receiving coils 320S, 322S and the power supply coils 402S, 404S can be provided on the lower surface of the ferrite plate 318 and the upper surface of the ferrite plate 406. One coil can be accommodated in each recess. In this case, the ferrite ring can not be provided.

[0102] The high-frequency power supply unit 410 has one coil power supply section for one power supply coil (402S, 404S). Different coil power supply sections supply high-frequency electric power of different frequencies.

[0103] In this second modified embodiment, when the power receiving coils (320S, 322S) face the power supply coils (402S, 404S) to which high-frequency electric power of a frequency corresponding to the resonance frequency of the resonance circuit belonging to the power receiving coils is supplied in the direction of the rotation axis Ax when the rotary table 310 is rotating, a sufficiently large current flows to the electric heater connected to the power receiving coils.

[0104] In addition, in the second modified embodiment, by positioning the rotary table 310 in such a manner that the resonance frequencies of the power receiving coils facing each other and the power supply frequency for the power supply coils are identical, it is possible to supply a sufficiently large current to all the power receiving coils when the rotation of the rotary table 310 is stopped.

[0105] According to the second modification, a plurality of heating zones can be set along the circumferential direction. Therefore, even if a non-uniform temperature distribution along the circumferential direction of the wafer W is generated, the non-uniform temperature distribution can be eliminated or reduced.

[0106] As shown in the second modification, in the case where a plurality of heating zones are set at the same radial direction position, it is preferable to use a contact type temperature sensor built into the chuck plate 312, and to perform control of the power supply of the high-frequency power supply unit 410 by the temperature regulator 420.

[0107] In addition, various modifications can be considered. For example, the configuration of the power supply coil shown in Figure 4 and the configuration of the power receiving coil shown in Figure 7 may be combined. In this case, the high-frequency power supply unit 410 supplies high-frequency electric power from the frequency-variable inner coil power supply section 412 and the outer coil power supply section 414 to the inner power supply coil 402 and the outer power supply coil 404 shown in Figure 4 .

[0108] From the viewpoint of ease of manufacture, it is preferable that the heating zone (heater arrangement region) coincide or substantially coincide with the power receiving coil arrangement region when the turntable 310 is viewed from directly above (for example, refer to Figure 3 and Figure 4 ). However, since the electric heater and the power receiving coil are wired, it is not necessarily required to be such a configuration.

[0109] It should be considered that the embodiments disclosed this time are illustrative in all respects, not restrictive. The above-described embodiments can be omitted, substituted, changed in various ways without departing from the scope and spirit of the claims.

[0110] The processing performed on the wafer W is not limited to liquid processing such as wet etching processing and chemical liquid cleaning processing, but can also be coating processing in which a coating film such as a resist film or an anti-reflection film is applied to the surface of the wafer W. In the case of coating processing, not only can a liquid for forming a coating film be applied while heating the wafer W, but also, for example, after a liquid for forming a coating film is applied while rotating the wafer W, baking can be performed in a state where the wafer W is rotated immediately after.

[0111] The substrate to be processed is not limited to a semiconductor wafer, but can also be a glass substrate, a ceramic substrate, or the like used in the field of semiconductor device manufacturing.

Claims

1. A substrate processing apparatus, wherein the substrate processing apparatus includes: a rotary table that holds a substrate; a rotary drive section that rotates the rotary table about a rotary axis; at least one electric heater provided to the rotary table; at least one power receiving coil provided to the rotary table and electrically connected to the electric heater; at least one power feeding coil provided to be spaced apart from the power receiving coil and capable of facing the power receiving coil in the direction of the rotary axis; and a high-frequency power supply unit that supplies high-frequency power to the power feeding coil, wherein the at least one electric heater includes a first heater and a second heater, the at least one power receiving coil includes a first power receiving coil and a second power receiving coil, the at least one power feeding coil includes a first power feeding coil and a second power feeding coil, a first resonance circuit including the first heater and the first power receiving coil is formed, a second resonance circuit including the second heater and the second power receiving coil is formed, a first resonance frequency as a resonance frequency of the first resonance circuit and a second resonance frequency as a resonance frequency of the second resonance circuit are different from each other, the high-frequency power supply unit includes a first power feeding section that supplies high-frequency power of a frequency corresponding to the first resonance frequency to the first power feeding coil, and a second power feeding section that supplies high-frequency power of a frequency corresponding to the second resonance frequency to the second power feeding coil, the first power receiving coil is a circular coil arranged in a first annular region that is centered on the rotary axis and has a first distance from the rotary axis, the second power receiving coil is a circular coil arranged in a second annular region that is centered on the rotary axis and has a second distance from the rotary axis that is greater than the first distance, the first power feeding coil is a circular coil arranged in a position that faces the first power receiving coil regardless of a rotational phase of the rotary table, the second power feeding coil is a circular coil arranged in a position that faces the second power receiving coil regardless of a rotational phase of the rotary table, a first ferrite is arranged between a power receiving coil arrangement region in which the at least one power receiving coil is arranged and a heater arrangement region in which the at least one electric heater is arranged, and a second ferrite is arranged between a power feeding coil arrangement region in which the at least one power feeding coil is arranged and an electric motor that constitutes the rotary drive section, wherein the first heater and the second heater are arranged above the first ferrite, the first power receiving coil and the second power receiving coil are arranged below the first ferrite, the first power feeding coil and the second power feeding coil are arranged above the second ferrite, and the electric motor is arranged below the second ferrite. The first power receiving coil is electrically connected to the first heater to form the first resonance circuit, the second power receiving coil is electrically connected to the second heater to form the second resonance circuit, the first power supply part supplies high-frequency power of a frequency corresponding to the first resonance frequency to the first power supply coil to wirelessly supply power to the first heater via the first power receiving coil, and the second power supply part supplies high-frequency power of a frequency corresponding to the second resonance frequency to the second power supply coil to wirelessly supply power to the second heater via the second power receiving coil.

2. The substrate processing apparatus according to claim 1, wherein The first heater and the second heater are disposed so as to be able to heat different regions of the rotary table, whereby mutually different regions of the substrate held on the rotary table can be heated.

3. The substrate processing apparatus according to claim 1, wherein The first heater is disposed so as to heat a ring-shaped region on the center side of the rotary table, and the second heater is disposed so as to heat a ring-shaped region on the peripheral edge side of the rotary table.

4. The substrate processing apparatus according to claim 1, wherein A third ferrite is disposed between the first power receiving coil and the second power receiving coil, and a fourth ferrite is disposed between the first power supply coil and the second power supply coil.

5. The substrate processing apparatus according to claim 1, wherein The substrate processing apparatus further includes: at least one non-contact temperature sensor that detects a surface temperature of the rotary table or a surface temperature of a substrate held on the rotary table; and a temperature regulator that controls high-frequency power output from the high-frequency power supply unit to the at least one power supply coil based on a detected temperature of the at least one temperature sensor, so that the temperature of the rotary table or the temperature of the substrate becomes a target value.

6. The substrate processing apparatus according to claim 5, wherein The high-frequency power supply unit has a zero-crossing circuit.

7. A substrate processing apparatus, wherein The substrate processing apparatus includes: a rotary table that holds a substrate; a rotary drive part that rotates the rotary table about a rotary axis; at least one electric heater that is provided to the rotary table; at least one power receiving coil that is provided to the rotary table and is electrically connected to the electric heater; at least one power supply coil that is disposed apart from the power receiving coil and is capable of facing the power receiving coil in the direction of the rotary axis; and a high-frequency power supply unit that supplies high-frequency power to the power supply coil, wherein the at least one electric heater includes a first heater and a second heater, the at least one power receiving coil includes a first power receiving coil and a second power receiving coil, the at least one power supply coil includes a first power supply coil and a second power supply coil, a first resonant circuit including the first heater and the first power receiving coil, and a second resonant circuit including the second heater and the second power receiving coil, a first resonant frequency as a resonant frequency of the first resonant circuit and a second resonant frequency as a resonant frequency of the second resonant circuit being different from each other, the high-frequency power supply unit includes a first power supply portion that supplies high-frequency power of a frequency corresponding to the first resonant frequency to the first power supply coil, and a second power supply portion that supplies high-frequency power of a frequency corresponding to the second resonant frequency to the second power supply coil, the first power receiving coil and the second power receiving coil are coils of first and second portions respectively arranged at mutually different positions in a circumferential direction within a power receiving coil arrangement region in a ring shape centered on the rotation axis and at a distance of a first distance from the rotation axis, the first power supply coil and the second power supply coil are coils of first and second portions respectively arranged at mutually different positions in a circumferential direction within a power supply coil arrangement region in a ring shape centered on the rotation axis and at a distance of a first distance from the rotation axis, the substrate processing apparatus is configured to switch, according to a rotation phase of the rotary stage, between a state in which the first power receiving coil and the first power supply coil face each other and a state in which they do not face each other, and between a state in which the second power receiving coil and the second power supply coil face each other and a state in which they do not face each other, a first ferrite is arranged between a power receiving coil arrangement region in which the at least one power receiving coil is arranged and a heater arrangement region in which the at least one electric heater is arranged, and a second ferrite is arranged between a power supply coil arrangement region in which the at least one power supply coil is arranged and an electric motor that constitutes the rotary drive portion, wherein the first heater and the second heater are arranged above the first ferrite, the first power receiving coil and the second power receiving coil are arranged below the first ferrite, the first power supply coil and the second power supply coil are arranged above the second ferrite, and the electric motor is arranged below the second ferrite, the first power receiving coil and the first heater are electrically connected to form the first resonant circuit, the second power receiving coil and the second heater are electrically connected to form the second resonant circuit, the first power supply portion supplies high-frequency power of a frequency corresponding to the first resonant frequency to the first power supply coil to wirelessly supply electric power to the first heater via the first power receiving coil, and the second power supply portion supplies high-frequency power of a frequency corresponding to the second resonant frequency to the second power supply coil to wirelessly supply electric power to the second heater via the second power receiving coil.

8. The substrate processing apparatus according to claim 7, wherein the first heater and the second heater are arranged so as to be able to heat mutually different regions of the substrate held by the rotary stage, and thus, mutually different regions in a plane of the substrate held by the rotary stage can be heated.

9. The substrate processing apparatus according to claim 7, wherein A third ferrite is arranged between the first power receiving coil and the second power receiving coil, and a fourth ferrite is arranged between the first power supplying coil and the second power supplying coil.

10. The substrate processing apparatus according to claim 7, wherein The substrate processing apparatus further includes: at least one non-contact temperature sensor that detects a surface temperature of the rotary table or a surface temperature of a substrate held by the rotary table; and a temperature regulator that controls high-frequency power output from the high-frequency power supply unit to the at least one power supplying coil based on a detected temperature of the at least one temperature sensor so that a temperature of the rotary table or a temperature of the substrate becomes a target value.

11. The substrate processing apparatus according to claim 10, wherein The high-frequency power supply unit has a zero-crossing circuit.

12. A substrate processing apparatus, wherein The substrate processing apparatus includes: a rotary table that holds a substrate; a rotary drive section that rotates the rotary table about a rotary axis; at least one electric heater provided to the rotary table; at least one power receiving coil provided to the rotary table and electrically connected to the electric heater; at least one power supplying coil provided to be spaced apart from the power receiving coil and capable of facing the power receiving coil in a direction of the rotary axis; and a high-frequency power supply unit that supplies high-frequency power to the power supplying coil, wherein the at least one electric heater includes a first heater and a second heater, the at least one power receiving coil includes a first power receiving coil and a second power receiving coil, the at least one power supplying coil includes one first power supplying coil for supplying power to the first power receiving coil and the second power receiving coil, a first resonance circuit including the first heater and the first power receiving coil is formed, a second resonance circuit including the second heater and the second power receiving coil is formed, a first resonance frequency as a resonance frequency of the first resonance circuit and a second resonance frequency as a resonance frequency of the second resonance circuit are different from each other, the high-frequency power supply unit is configured as a high-frequency power supply unit whose output frequency is variable, and is capable of selectively supplying high-frequency power of a frequency corresponding to the first resonance frequency and high-frequency power of a frequency corresponding to the second resonance frequency to the first power supplying coil, the first power receiving coil is a circular coil arranged in a first annular region that is centered on the rotary axis and has a distance from the rotary axis of a first distance, the second power receiving coil is a circular coil arranged in a second annular region that is centered on the rotary axis and has a distance from the rotary axis of a second distance that is greater than the first distance, the first power supplying coil is a circular coil arranged so as to face both the first power receiving coil and the second power receiving coil regardless of a rotation phase of the rotary table, A first ferrite is arranged between a power-receiving coil arrangement region in which the at least one power-receiving coil is arranged and a heater arrangement region in which the at least one electric heater is arranged, and a second ferrite is arranged between a power-supplying coil arrangement region in which the at least one power-supplying coil is arranged and an electric motor that constitutes the rotary drive section, wherein the first heater and the second heater are arranged above the first ferrite, the first power-receiving coil and the second power-receiving coil are arranged below the first ferrite, the first power-supplying coil is arranged above the second ferrite, and the electric motor is arranged below the second ferrite, The first power-receiving coil and the first heater are electrically connected to form the first resonance circuit, the second power-receiving coil and the second heater are electrically connected to form the second resonance circuit, and the high-frequency power supply unit supplies high-frequency power of a frequency corresponding to the first resonance frequency to the first power-supplying coil to wirelessly supply power to the first heater via the first power-receiving coil, and supplies high-frequency power of a frequency corresponding to the second resonance frequency to the first power-supplying coil to wirelessly supply power to the second heater via the second power-receiving coil.

13. The substrate processing apparatus according to claim 12, wherein The first heater and the second heater are arranged so as to be able to heat different regions of the rotary table, whereby mutually different regions of the substrate held on the rotary table can be heated.

14. The substrate processing apparatus according to claim 12, wherein The first heater is arranged so as to heat a ring-shaped region on the center side of the rotary table, and the second heater is arranged so as to heat a ring-shaped region on the peripheral side of the rotary table.

15. The substrate processing apparatus according to claim 12, wherein A third ferrite is arranged between the first power-receiving coil and the second power-receiving coil.

16. The substrate processing apparatus according to claim 12, wherein The substrate processing apparatus further includes: at least one non-contact temperature sensor that detects a surface temperature of the rotary table or a surface temperature of a substrate held on the rotary table; and a temperature regulator that controls high-frequency power output from the high-frequency power supply unit to the at least one power-supplying coil based on a detected temperature of the at least one temperature sensor, so that the temperature of the rotary table or the temperature of the substrate becomes a target value.

17. The substrate processing apparatus according to claim 16, wherein The high-frequency power supply unit has a zero-crossing circuit.

18. A substrate processing apparatus, wherein The substrate processing apparatus includes: a rotary table that holds a substrate; a rotary drive section that rotates the rotary table about a rotation axis; at least one electric heater arranged on the rotary table; at least one power-receiving coil arranged on the rotary table and electrically connected to the electric heater; at least one power-supplying coil arranged so as to be able to face the power-receiving coil in the direction of the rotation axis with a gap; and a high-frequency power supply unit that supplies high-frequency electric power to the power feeding coil, wherein the at least one electric heater includes a first heater and a second heater, the at least one power receiving coil includes a first power receiving coil and a second power receiving coil, the at least one power feeding coil includes one first power feeding coil for feeding electric power to the first power receiving coil and the second power receiving coil, a first resonant circuit including the first heater and the first power receiving coil is formed, a second resonant circuit including the second heater and the second power receiving coil is formed, a first resonant frequency as a resonant frequency of the first resonant circuit and a second resonant frequency as a resonant frequency of the second resonant circuit are different from each other, the high-frequency power supply unit is configured as a high-frequency power supply unit whose output frequency is variable, and is capable of selectively supplying the first power feeding coil with high-frequency electric power of a frequency corresponding to the first resonant frequency and high-frequency electric power of a frequency corresponding to the second resonant frequency, the first power receiving coil and the second power receiving coil are coils of first and second portions respectively arranged at mutually different positions in a circumferential direction within a power receiving coil arrangement region in a ring shape centered on the rotational axis and at a distance of a first distance from the rotational axis, the first power feeding coil is a circular coil arranged so as to face both the first power receiving coil and the second power receiving coil regardless of a rotational phase of the rotary table, a first ferrite is arranged between a power receiving coil arrangement region in which the at least one power receiving coil is arranged and a heater arrangement region in which the at least one electric heater is arranged, and a second ferrite is arranged between a power feeding coil arrangement region in which the at least one power feeding coil is arranged and an electric motor that constitutes the rotary drive section, wherein the first heater and the second heater are arranged above the first ferrite, the first power receiving coil and the second power receiving coil are arranged below the first ferrite, the first power feeding coil is arranged above the second ferrite, and the electric motor is arranged below the second ferrite, the first power receiving coil and the first heater are electrically connected to form the first resonant circuit, the second power receiving coil and the second heater are electrically connected to form the second resonant circuit, the first power feeding coil is supplied with high-frequency electric power of a frequency corresponding to the first resonant frequency by the high-frequency power supply unit to wirelessly feed electric power to the first heater via the first power receiving coil, and the first power feeding coil is supplied with high-frequency electric power of a frequency corresponding to the second resonant frequency by the high-frequency power supply unit to wirelessly feed electric power to the second heater via the second power receiving coil.

19. The substrate processing apparatus according to claim 18, wherein the first heater and the second heater are arranged so as to be capable of heating mutually different regions of the substrate held on the rotary table, and thus, mutually different regions in-plane of the substrate held on the rotary table can be heated.

20. The substrate processing apparatus according to claim 18, wherein A third ferrite is arranged between the first power receiving coil and the second power receiving coil.

21. The substrate processing apparatus according to claim 18, wherein The substrate processing apparatus further includes: at least one non-contact temperature sensor that detects a surface temperature of the rotary table or a surface temperature of a substrate held to the rotary table; and a temperature regulator that controls high-frequency electric power output from the high-frequency power supply unit to the at least one power supply coil based on a detected temperature of the at least one temperature sensor so that the temperature of the rotary table or the temperature of the substrate becomes a target value.

22. The substrate processing apparatus according to claim 21, wherein The high-frequency power supply unit has a zero-crossing circuit.

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