Antenna packaging structure and packaging method

Abstract

The present invention provides an antenna packaging structure and packaging method, the packaging method includes: providing a supporting substrate, forming a rewiring layer, a first antenna layer, a first metal feeder post, a first packaging layer, a second antenna layer, a second metal feeder post, a second packaging layer, a third antenna layer, a semiconductor chip, a metal bump and a third packaging layer. The present invention protects the semiconductor chip based on the third packaging layer, and simultaneously packages the chip and the metal bump, which can effectively improve the stability of the packaging structure. The multi-layer antenna structure is formed by multi-layer metal feeder posts and multi-layer packaging layers, which can reduce the package size, enhance the receiving signal capability, expand the receiving signal bandwidth, form a bottom filling layer, and improve the stability of the packaging structure. The semiconductor chip, the rewiring layer and the antenna metal are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical and antenna performance, have lower power consumption, and have high process structure integration.

Description

Technical Field

[0001] The present invention belongs to the field of packaging and communication equipment, and in particular relates to an antenna packaging structure and a packaging method. Background Art

[0002] With the advancement of technology, various high-tech electronic products have been developed to facilitate people's lives, including various electronic devices such as notebook computers, mobile phones, tablet computers (PADs), etc.

[0003] With the popularization of these high-tech electronic products and the increase in people's needs, in addition to the significant increase in the functions and applications configured in these high-tech products, in particular, the wireless communication function has been added to meet people's needs for mobility. Therefore, people can use these high-tech electronic products at any place or at any time through these high-tech electronic devices with wireless communication functions. This greatly increases the flexibility and convenience of using these high-tech electronic products. Therefore, people no longer have to be confined to a fixed area, breaking the boundaries of the scope of use, making the application of these electronic products truly convenient for people's lives.

[0004] Antenna in Package (AiP) is a technology that integrates antenna and chip in the package based on packaging materials and processes to achieve system-level wireless functions. AiP technology provides good antenna and packaging solutions for system-level wireless chips because it conforms to the trend of increasing integration of silicon-based semiconductor processes. With the rapid development of communication information, AiP technology has become a must-have technology for 5G (5th Generation) communications and automotive radar chips, so AiP technology has received widespread attention. Wafer-level package antenna (WLP AiP) operates on the entire wafer and makes antennas on the plastic layer. Compared with traditional AiP modules, it has higher precision and is thinner and smaller in size, so it has been widely used. In the application of antennas, such as in mobile phone terminals, the antenna needs to transmit and receive signals through a combination of multiple functional chip modules. The known practice is to make the antenna directly on the surface of the circuit board (PCB). The disadvantage is that this practice will make the antenna occupy additional circuit board area, and because the transmission signal line is long, the performance is poor, the power consumption is large, and the package volume is large. In particular, the traditional PCB package has too much loss under 5G millimeter wave transmission, and it is difficult to achieve effective protection of the antenna circuit chip in the existing packaging process. The process flow is still relatively complicated, and the antenna's electrothermal performance and antenna performance efficiency need to be improved. In addition, the existing packaging structure is generally a single-layer plastic package (single-layer compound), which makes the packaging structure size that realizes the expected function larger, and the packaging stability of the chip and its metal bumps also needs to be improved.

[0005] Therefore, it is necessary to provide an antenna packaging structure and a packaging method to solve the above problems in the prior art. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an antenna packaging structure and a packaging method, which are used to solve the problems in the prior art such as large antenna packaging volume, difficulty in effectively protecting the chip and stable packaging.

[0007] To achieve the above object and other related objects, the present invention provides an antenna packaging method, comprising the steps of:

[0008] Providing a supporting substrate, and forming a temporary bonding layer on the supporting substrate;

[0009] forming a rewiring layer on the temporary bonding layer, wherein the rewiring layer comprises a first surface connected to the temporary bonding layer and a second surface opposite to the first surface;

[0010] forming a first antenna layer electrically connected to the rewiring layer on the second surface;

[0011] Forming a first metal feed post electrically connected to the first antenna layer on the first antenna layer;

[0012] Using a first packaging layer to encapsulate the first metal feeder post, and making the first packaging layer expose the top surface of the first metal feeder post;

[0013] Forming a second antenna layer electrically connected to the first metal feeder post on the first packaging layer;

[0014] forming a second metal feed post electrically connected to the second antenna layer on the second antenna layer;

[0015] Using a second packaging layer to encapsulate the second metal feeder post, and making the second packaging layer expose the top surface of the second metal feeder post;

[0016] forming a third antenna layer electrically connected to the second metal feed post on the second packaging layer;

[0017] Based on the temporary bonding layer, the rewiring layer and the supporting substrate are peeled off to expose the first surface of the rewiring layer, a first opening is formed in the rewiring layer from the first surface, and at least one semiconductor chip electrically connected to the rewiring layer is formed on the first surface;

[0018] forming a metal bump in the first opening electrically connected to the rewiring layer;

[0019] The semiconductor chip and the metal bump are packaged with a third packaging layer, and a second opening is formed in the third packaging layer to expose the metal bump.

[0020] Optionally, the supporting substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate and a ceramic substrate.

[0021] Optionally, the temporary bonding layer includes a light-to-heat conversion layer, wherein the light-to-heat conversion layer is irradiated with laser to separate the light-to-heat conversion layer from the rewiring layer and the supporting substrate, thereby peeling off the rewiring layer and the supporting substrate.

[0022] Optionally, forming the rewiring layer comprises the steps of:

[0023] forming a first dielectric layer on the surface of the temporary bonding layer;

[0024] Forming a seed layer on the surface of the first dielectric layer by a sputtering process, forming a first metal layer on the seed layer, and etching the first metal layer and the seed layer to form a patterned first metal wiring layer;

[0025] Forming a second dielectric layer on the surface of the patterned first metal wiring layer, and etching the second dielectric layer to form a second dielectric layer having patterned through holes;

[0026] A conductive plug is filled in the patterned through hole, and then a second metal layer is formed on the surface of the second dielectric layer by a sputtering process, and the metal layer is etched to form a patterned second metal wiring layer.

[0027] Optionally, after forming the first antenna layer, the step of: forming a first protective adhesion layer covering the first antenna layer on the rewiring layer, the first metal feeder post is formed on the surface of the first antenna layer via the first protective adhesion layer, and the first packaging layer is formed on the first protective adhesion layer; and / or, after forming the second antenna layer, the step of: forming a second protective adhesion layer covering the second antenna layer on the first packaging layer, the second metal feeder post is formed on the surface of the second antenna layer via the second protective adhesion layer, and the second packaging layer is formed on the second protective adhesion layer.

[0028] Optionally, before forming the first metal feeder post, the step of: forming a first lower metal layer on the surface of the first antenna layer, wherein the first metal feeder post is formed on the surface of the first lower metal layer, and the first metal feeder post is formed by a wire bonding process, an electroplating process, or a chemical plating process; and / or, before forming the second metal feeder post, the step of: forming a second lower metal layer on the surface of the second antenna layer, wherein the second metal feeder post is formed on the surface of the second lower metal layer, and the second metal feeder post is formed by a wire bonding process, an electroplating process, or a chemical plating process.

[0029] Optionally, there are multiple semiconductor chips, and the semiconductor chips include one of active components and passive components, wherein the active component includes one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive component includes one of a resistor, a capacitor and an inductor.

[0030] Optionally, after forming the semiconductor chip and before forming the metal bump, the method further includes performing bottom filling on each semiconductor chip to form a bottom filling layer, wherein the bottom filling layer is formed between the semiconductor chip and the rewiring layer.

[0031] Further optionally, after forming the bottom filling layer, the step of: performing dam glue dispensing on each of the semiconductor chips to form a dam glue dispensing protective layer, the dam glue dispensing protective layer is formed at least on the bottom and around the semiconductor chip, and the dam glue dispensing protective layer and the bottom filling layer surround the semiconductor chip, and the third packaging layer also encapsulates the dam glue dispensing protective layer.

[0032] The present invention further provides an antenna packaging structure, which is preferably manufactured using the antenna packaging method of the present invention, wherein the antenna packaging structure comprises:

[0033] a rewiring layer, the rewiring layer comprising a first surface and a second surface opposite to the first surface, and a first opening opened from the first surface is formed in the rewiring layer;

[0034] a first antenna layer formed on the second surface and electrically connected to the rewiring layer;

[0035] A first metal feed post, formed on the first antenna layer and electrically connected to the first antenna layer;

[0036] a first packaging layer, covering the first metal feeder post and exposing a top surface of the first metal feeder post;

[0037] a second antenna layer, formed on the first packaging layer and electrically connected to the first metal feed post;

[0038] a second metal feed post formed on the second antenna layer and electrically connected to the second antenna layer;

[0039] a second packaging layer, covering the second metal feeder post and exposing a top surface of the second metal feeder post;

[0040] a third antenna layer, formed on the second packaging layer and electrically connected to the second metal feed post;

[0041] at least one semiconductor chip bonded to the first surface and electrically connected to the rewiring layer;

[0042] A metal bump is formed in the first opening and electrically connected to the rewiring layer.

[0043] The third packaging layer covers the semiconductor chip and the metal bump, and a second opening is formed in the third packaging layer, and the second opening exposes the metal bump.

[0044] Optionally, the connecting portion between the first metal feeder post and the first antenna layer has a first lower metal layer, the material of the first metal feeder post includes one of Au, Ag, Cu, and Al, and the material of the first lower metal layer includes a stack consisting of a Ni layer and an Au layer; and / or, the connecting portion between the second metal feeder post and the second antenna layer has a second lower metal layer, the material of the second metal feeder post includes one of Au, Ag, Cu, and Al, and the material of the second lower metal layer includes a stack consisting of a Ni layer and an Au layer.

[0045] Optionally, the antenna packaging structure also includes a first protective adhesion layer, which covers the first antenna layer, the first metal feeder pole is formed on the surface of the first antenna layer via the first protective adhesion layer, and the first packaging layer is formed on the first protective adhesion layer; and / or, the antenna packaging structure also includes a second protective adhesion layer, which covers the second antenna layer, the second metal feeder pole is formed on the surface of the second antenna layer via the second protective adhesion layer, and the second packaging layer is formed on the second protective adhesion layer.

[0046] Optionally, the material of the first encapsulation layer includes one of silicone and epoxy resin; the material of the second encapsulation layer includes one of silicone and epoxy resin; and the material of the third encapsulation layer includes one of silicone and epoxy resin.

[0047] Optionally, there are multiple semiconductor chips, and the semiconductor chips include one of active components and passive components, wherein the active component includes one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive component includes one of a resistor, a capacitor and an inductor.

[0048] Optionally, the antenna packaging structure further includes a bottom filling layer, wherein the bottom filling layer is formed between the semiconductor chip and the rewiring layer.

[0049] Further optionally, the antenna packaging structure also includes a dam glue dispensing protective layer, the dam glue dispensing protective layer is formed at least on the bottom and around the semiconductor chip, and the dam glue dispensing protective layer and the bottom filling layer surround the semiconductor chip, and the third packaging layer also encapsulates the dam glue dispensing protective layer.

[0050] As described above, the antenna packaging structure and packaging method of the present invention protect the semiconductor chip based on the third packaging layer, and simultaneously package the chip and the metal bump, which can effectively improve the stability of the packaging structure. A multi-layer antenna structure is formed by multi-layer metal feeder columns and multi-layer packaging layers, which can reduce the package size and enhance the receiving signal capability and expand the receiving signal bandwidth. The bottom filling layer is formed by the bottom filling process to improve the stability of the chip. The bottom filling process is performed before the metal bump is formed, which can effectively prevent the metal bump from affecting the bottom filling. The dam dispensing process is added to the wafer-level packaging to form a dam dispensing protection layer to provide double protection for the chip. , and can effectively reduce the packaging process flow and improve the process cycle. By arranging the lines of different rewiring layers, all active components or passive components are integrated into a packaging structure, which can effectively reduce the package size. The semiconductor chip, rewiring layer and antenna metal and other structures are set to a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical and high-efficiency antenna performance, and have lower power consumption and high process structure integration. The fan-out packaging method is used to package the antenna structure, which effectively reduces the package volume, so that the antenna packaging structure has a higher degree of integration and better packaging performance, and has broad application prospects in the field of semiconductor packaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 Shown is a flow chart of a chip packaging method provided by an embodiment of the present invention.

[0052] Figure 2 Shown is a structural schematic diagram of forming a temporary bonding layer in the antenna packaging method according to an embodiment of the present invention.

[0053] Figure 3 It is a schematic structural diagram of forming a first dielectric layer in the antenna packaging method according to an embodiment of the present invention.

[0054] Figure 4 It is a schematic structural diagram of forming a first metal wiring layer in the antenna packaging method according to an embodiment of the present invention.

[0055] Figure 5It is a diagram showing the formation of a second dielectric layer and a second metal wiring layer in the antenna packaging method according to an embodiment of the present invention.

[0056] Figure 6 It is a schematic diagram showing a rewiring layer of a multi-layer stacking structure formed in an antenna packaging method according to an embodiment of the present invention.

[0057] Figure 7 Shown is a structural schematic diagram of forming a first antenna layer in an antenna packaging method according to an embodiment of the present invention.

[0058] Figure 8 Shown is a schematic structural diagram of forming a first metal feed post in an antenna packaging method according to an embodiment of the present invention.

[0059] Fig. 9 Shown is a structural schematic diagram of forming a first packaging material layer in the antenna packaging method according to an embodiment of the present invention.

[0060] Fig.10 It is a schematic structural diagram of forming a first packaging layer in the antenna packaging method according to an embodiment of the present invention.

[0061] Fig.11 It is a schematic structural diagram showing the structure after the first protective adhesion layer is formed in the antenna packaging method according to an embodiment of the present invention.

[0062] Fig.12 It is a schematic structural diagram of forming a second antenna layer in the antenna packaging method according to an embodiment of the present invention.

[0063] Fig.13 Shown is a schematic structural diagram of forming a second metal feed post in the antenna packaging method according to an embodiment of the present invention.

[0064] Fig.14 It is a schematic structural diagram of forming a second packaging material layer in the antenna packaging method according to an embodiment of the present invention.

[0065] Fig.15 It is a schematic structural diagram of forming a second packaging layer in the antenna packaging method according to an embodiment of the present invention.

[0066] Fig.16 It is a schematic structural diagram of forming a third antenna layer in the antenna packaging method according to an embodiment of the present invention.

[0067] Fig.17 It is a schematic diagram of the structure after peeling off the supporting substrate in the antenna packaging method according to an embodiment of the present invention.

[0068] Fig.18 It is a schematic diagram showing the formation of a semiconductor chip and a first opening in the antenna packaging method according to an embodiment of the present invention.

[0069] Fig.19 It is a schematic structural diagram of forming a bottom filling layer in the antenna packaging method according to an embodiment of the present invention.

[0070] Fig. 20 Shown is a structural schematic diagram of forming metal bumps in an antenna packaging method according to an embodiment of the present invention.

[0071] Fig.21 It is a schematic structural diagram of forming a third packaging layer in the antenna packaging method according to an embodiment of the present invention.

[0072] Fig. 22 It is a schematic diagram showing the structure of forming a dam glue dispensing protection layer in the antenna packaging method according to an embodiment of the present invention.

[0073] Fig.23 It is a schematic structural diagram of forming a second opening in the antenna packaging method according to an embodiment of the present invention.

[0074] Component number description

[0075] 101 Support base

[0076] 102 Temporary bonding layer

[0077] 201 First dielectric layer

[0078] 202 First metal wiring layer

[0079] 203 Second dielectric layer

[0080] 204 Second metal wiring layer

[0081] 301 First Antenna Layer

[0082] 302 First lower metal layer

[0083] 303 First metal feeder pole

[0084] 304 first packaging material layer

[0085] 305 First packaging layer

[0086] 306 first protective adhesive layer

[0087] 307 Second Antenna Layer

[0088] 308 Second lower metal layer

[0089] 309 Second metal feeder pole

[0090] 310 Second packaging material layer

[0091] 311 Second packaging layer

[0092] 312 Third antenna layer

[0093] 401 Semiconductor Chip

[0094] 402 Bottom Fill Layer

[0095] 403 dam glue protection layer

[0096] 501 First Opening

[0097] 502 metal bumps

[0098] 503 Third packaging layer

[0099] 504 Second Opening

[0100] Steps S1-S12 DETAILED DESCRIPTION

[0101] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0102] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic view is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional space dimensions of length, width and depth should be included.

[0103] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0104] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0105] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0106] Embodiment 1:

[0107] like Figure 1 As shown, the present invention provides an antenna packaging method, the packaging method comprising the steps of:

[0108] Providing a supporting substrate, and forming a temporary bonding layer on the supporting substrate;

[0109] forming a rewiring layer on the temporary bonding layer, wherein the rewiring layer comprises a first surface connected to the temporary bonding layer and a second surface opposite to the first surface;

[0110] forming a first antenna layer electrically connected to the rewiring layer on the second surface;

[0111] Forming a first metal feed post electrically connected to the first antenna layer on the first antenna layer;

[0112] Using a first packaging layer to encapsulate the first metal feeder post, and making the first packaging layer expose the top surface of the first metal feeder post;

[0113] Forming a second antenna layer electrically connected to the first metal feeder post on the first packaging layer;

[0114] forming a second metal feed post electrically connected to the second antenna layer on the second antenna layer;

[0115] Using a second packaging layer to encapsulate the second metal feeder post, and making the second packaging layer expose the top surface of the second metal feeder post;

[0116] forming a third antenna layer electrically connected to the second metal feed post on the second packaging layer;

[0117] Based on the temporary bonding layer, the rewiring layer and the supporting substrate are peeled off to expose the first surface of the rewiring layer, a first opening is formed in the rewiring layer from the first surface, and at least one semiconductor chip electrically connected to the rewiring layer is formed on the first surface;

[0118] forming a metal bump in the first opening electrically connected to the rewiring layer;

[0119] The semiconductor chip and the metal bump are packaged with a third packaging layer, and a second opening is formed in the third packaging layer to expose the metal bump.

[0120] The packaging method of the present invention will be described in detail below in conjunction with specific embodiments.

[0121] like Figure 1 S1 and Figure 2 As shown, a supporting substrate 101 is provided, and a temporary bonding layer 102 is formed on the supporting substrate.

[0122] As an example, the support substrate 101 includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate and a ceramic substrate. Specifically, in this embodiment, the support substrate 101 is selected as a glass substrate, which has a low cost, is easy to form a separation layer on its surface, and can reduce the difficulty of the subsequent stripping process.

[0123] As an example, the temporary bonding layer 102 includes a light-to-heat conversion layer, see Fig.17 As shown, in a subsequent step, laser is used to irradiate the light-to-heat conversion layer to separate the light-to-heat conversion layer from the rewiring layer and the supporting substrate 101 , thereby peeling off the rewiring layer and the supporting substrate 101 .

[0124] Specifically, the temporary bonding layer 102 includes a light-to-heat conversion layer (LTHC), which is formed on the support substrate 101 by a spin coating process and then solidified by a curing process. The light-to-heat conversion layer (LTHC) has stable performance and a smooth surface, which is conducive to the subsequent preparation of the rewiring layer, and in the subsequent stripping process, the stripping difficulty is relatively low. In addition, after the rewiring layer and the support substrate 101 are stripped, the support substrate 101 can be reused to save costs.

[0125] like Figure 1 S2 and Figure 3-6 As shown, a redistribution layer (RDL) is formed on the temporary bonding layer 102 , and the redistribution layer includes a first surface connected to the temporary bonding layer 102 and a second surface opposite to the first surface.

[0126] As an example, forming the rewiring layer comprises the steps of:

[0127] like Figure 3As shown, a first dielectric layer 201 is formed on the surface of the temporary bonding layer 102 by a chemical vapor deposition process or a physical vapor deposition process. The material of the first dielectric layer 201 includes one or a combination of two or more of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorine-containing glass; for example, the material of the first dielectric layer 201 is PI (polyimide) to further reduce the process difficulty and process cost.

[0128] Then, if Figure 4 As shown, a seed layer is formed on the surface of the first dielectric layer 201 by a sputtering process, a first metal layer is formed on the seed layer, and the first metal layer and the seed layer are etched to form a patterned first metal wiring layer 202; the material of the seed layer includes a stack of a titanium layer and a copper layer. The material of the first metal wiring layer 202 includes one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium.

[0129] Then, if Figure 5 As shown, a second dielectric layer 203 is formed on the surface of the patterned first metal wiring layer 202 by a chemical vapor deposition process or a physical vapor deposition process, and the second dielectric layer 203 is etched to form a second dielectric layer 203 with a patterned through hole. The material of the second dielectric layer 203 includes one or a combination of two or more of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphorus silicon glass, and fluorine-containing glass. For example, the material of the second dielectric layer 203 is selected as PI (polyimide) to further reduce the process difficulty and process cost.

[0130] Continue, as Figure 5 As shown, a conductive plug is filled in the patterned through hole, and then a second metal layer is formed on the surface of the second dielectric layer 203 by a sputtering process, and the metal layer is etched to form a patterned second metal wiring layer 204. The material of the second metal wiring layer includes one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium.

[0131] In addition, if Figure 6 As shown, the steps of forming the second dielectric layer 203 and the second metal layer are repeated to form multiple metal layers and multiple dielectric layers, thereby forming a rewiring layer with a multi-layer stacking structure to achieve different wiring functions.

[0132] like Figure 1 S3 and Figure 7 As shown, a first antenna layer 301 electrically connected to the rewiring layer is formed on the second surface. The material of the first antenna layer 301 can be copper, etc., and the structure of the first antenna layer is set according to actual conditions.

[0133] As an example, see Fig.11 As shown, after forming the first antenna layer 301, the steps of: forming a first protective adhesion layer 306 covering the first antenna layer 301 on the rewiring layer, the first metal feeder post 303 is formed on the surface of the first antenna layer 301 via the first protective adhesion layer 306, and the first packaging layer 305 is formed on the first protective adhesion layer 306. In an optional example, the material of the first protective adhesion layer 306 includes polyimide. Since two adjacent antenna structures are separated by an antenna layer, it is easy to cause the adhesion strength between the two antenna structures to decrease and cause displacement or rupture. The present invention sets a first protective adhesion layer 306 between the two adjacent antenna structures. On the one hand, it can protect the antenna metal, and on the other hand, it can improve the adhesion performance between the two adjacent antenna structures and improve the mechanical structure strength of the antenna.

[0134] like Figure 1 S4 and Figure 8 As shown, a first metal feed post 303 electrically connected to the first antenna layer 301 is formed on the first antenna layer 301 .

[0135] As an example, before forming the first metal feeder post 303 (wire bond), the step of forming a first lower metal layer 302 on the surface of the first antenna layer, and the first metal feeder post 303 is formed on the surface of the first lower metal layer 302. In an optional example, the first metal feeder post 303 is formed by a wire bonding process, an electroplating process, or a chemical plating process.

[0136] Specifically, the first lower metal layer 302 includes a stack of Ni layers and Au layers. The material of the first metal feeder post 303 includes one of Au, Ag, Cu, and Al, but is not limited thereto. It can also be any metal material that can be used as a pillar. In this embodiment, a wire bonding process is used to form the first metal feeder post 303 on the first lower metal layer 302. The first lower metal layer 302 can effectively strengthen the bonding strength between the first metal feeder post 303 and the first antenna layer and reduce the contact resistance. In an optional example, when the first protective adhesion layer 306 is present, it also includes a step of forming an opening in the first protective adhesion layer 306 to form the first metal feeder post 303.

[0137] As an example, there are multiple first metal feeder posts 303, and the arrangement of the multiple first metal feeder posts 303 includes: forming an electromagnetic shielding structure based on the first metal feeder post 303 and at least one of the first antenna layer 301 and the second antenna layer 307 to achieve electromagnetic shielding of the packaging structure.

[0138] Specifically, in one example, an arrangement method of the first metal feed post 303 is provided, and the first metal feed post 303 is formed on the surface of the first antenna layer 301. Through the arrangement of the first metal feed post 303, the first metal feed post 303 and specific positions of some metal layers in the first antenna layer 301 and the second antenna layer 307 form an electromagnetic shielding protection structure together, thereby achieving electromagnetic shielding of the obtained packaging structure. For example, in an optional example, the first vertical metal feeder post 303 in the middle can form a shielding structure with the upper and lower antenna layers, wherein a portion of the first metal feeder post 303 is grounded and belongs to the grounding wire. This portion of the first metal feeder post 303 can be electrically connected to the first antenna layer 301, or it can be electrically connected to the second antenna layer 307. Of course, this portion of the first metal feeder post 303 can also be electrically connected to the first antenna layer 301 and the second antenna layer 307. The mutual electromagnetic influence formed in the transmission of chip electrical signals can be eliminated by the grounding wire, thereby achieving the effect of electromagnetic shielding. In an optional example, the grounded first metal feeder post 303 is arranged in a circular or even manner, and is electrically connected to the upper and lower corresponding first antenna layer 301 and second antenna layer 307, thereby forming an electromagnetic shielding structure to achieve electromagnetic shielding.

[0139] like Figure 1 S5 and Figure 9-11 As shown, the first metal feeder post 303 is encapsulated by a first encapsulation layer 305 , and the first encapsulation layer 305 exposes the top surface of the first metal feeder post 303 .

[0140] Specifically, in one example, the first metal feeder post 303 is encapsulated with a first encapsulation material layer 304, and the first encapsulation material layer 304 is thinned (grinding) so that the top surface of the first metal feeder post 303 is exposed, and the first encapsulation material layer 304 after thinning forms the first encapsulation layer 305. As an example, the method of encapsulating the first metal feeder post 303 with the first encapsulation material layer 304 includes one of compression molding, transfer molding, liquid sealing molding, vacuum lamination and spin coating, and the material of the first encapsulation layer 305 includes one of silicone and epoxy resin. Fig.11 As shown, when the first protective adhesive layer 306 is present, the first encapsulation layer 305 is formed on the first protective adhesive layer 306 .

[0141] like Figure 1 S6 and Fig.12 As shown, a second antenna layer 307 electrically connected to the first metal feed post 303 is formed on the first packaging layer 305 .

[0142] Specifically, the material of the second antenna layer 307 can be copper or the like, and the structure of the second antenna layer is set according to actual conditions. Fig.16 As shown, a dielectric layer is formed around the second antenna layer, and the material of the dielectric layer can be selected as PI (polyimide). Optionally, the upper surface of the dielectric layer is flush with the upper surface of the second antenna layer. The second packaging layer is formed on the dielectric layer and the upper surface of the second antenna layer. The second antenna layer 307 is electrically connected to the first antenna layer 301 through the first metal feeder column 303. The multi-layer antenna layer can enhance the receiving signal capability and expand the receiving signal bandwidth. The present invention can obtain a multi-layer antenna structure layer, which can effectively shorten the conduction path between components, have better electrical properties and antenna performance, and have lower power consumption. The semiconductor chip 401, the rewiring layer and the antenna metal are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and have lower power consumption and high process structure integration.

[0143] As an example, after forming the second antenna layer 307, the step of: forming a second protective adhesion layer covering the second antenna layer 307 on the first packaging layer, at this time, the second metal feeder post 309 is subsequently formed on the surface of the second antenna layer via the second protective adhesion layer, and the second packaging layer 311 is subsequently formed on the second protective adhesion layer. In an optional example, the material of the second protective adhesion layer includes polyimide. Since two adjacent antenna structures are separated by an antenna layer, it is easy to cause the adhesion strength between the two antenna structures to decrease and cause displacement or rupture. The present invention sets a second protective adhesion layer between the two adjacent antenna structures. On the one hand, it can protect the antenna metal, and on the other hand, it can improve the adhesion performance between the two adjacent antenna structures and improve the mechanical structure strength of the antenna. In addition, "and / or" in this article means that only one of the two schemes described may be performed, or both schemes described may be performed at the same time. For example, after forming the first antenna layer, the step of: forming a first protective adhesion layer covering the first antenna layer on the rewiring layer, the first metal feed post is formed on the surface of the first antenna layer via the first protective adhesion layer, and the first packaging layer is formed on the first protective adhesion layer; and / or, after forming the second antenna layer, the step of: forming a second protective adhesion layer covering the second antenna layer on the first packaging layer, the second metal feed post is formed on the surface of the second antenna layer via the second protective adhesion layer, and the second packaging layer is formed on the second protective adhesion layer means that the first protective adhesion layer may be formed only after forming the first antenna layer without forming the second protective adhesion layer, or the second protective adhesion layer may be formed only after forming the second antenna layer without forming the first protective adhesion layer, or both the first protective adhesion layer and the second protective adhesion layer may be formed.

[0144] like Figure 1 S7 and Fig.13 As shown, a second metal feed post 309 electrically connected to the second antenna layer 307 is formed on the second antenna layer 307. In an optional example, the second metal feed post 309 and the first metal feed post 303 are arranged correspondingly up and down.

[0145] As an example, before forming the second metal feeder post 309 (wire bond), the step of forming a second lower metal layer 308 on the surface of the second antenna layer, and the second metal feeder post 309 is formed on the surface of the second lower metal layer 308. In an optional example, the second metal feeder post 309 is formed by a wire bonding process, an electroplating process, or a chemical plating process.

[0146] Specifically, the second lower metal layer 308 includes a stack of Ni layers and Au layers. The material of the second metal feed post 309 includes one of Au, Ag, Cu, and Al, but is not limited thereto. It can also be any metal material that can be used as a pillar. In this embodiment, a wire bonding process is used to form the second metal feed post 309 on the second lower metal layer 308. The second lower metal layer 308 can effectively strengthen the bonding strength between the second metal feed post 309 and the second antenna layer and reduce the contact resistance. In an optional example, when the second protective adhesion layer is present, it also includes a step of forming an opening in the second protective adhesion layer to form the second metal feed post 309.

[0147] As an example, there are multiple second metal feeder posts 309, and the arrangement of the multiple second metal feeder posts 309 includes: forming a second electromagnetic shielding structure based on the second metal feeder post 309 and at least one of the second antenna layer 307 and the third antenna layer 312 to achieve electromagnetic shielding of the packaging structure.

[0148] Specifically, in one example, an arrangement method of the second metal feed post 309 is provided, and the second metal feed post 309 is formed on the surface of the second antenna layer 307. Through the arrangement of the second metal feed post 309, the second metal feed post 309 and specific positions of some metal layers in the second antenna layer 307 and the third antenna layer 312 form an electromagnetic shielding protection structure together, thereby achieving electromagnetic shielding of the resulting packaging structure. For example, in an optional example, the second metal feeder post 309 vertical in the middle can form a shielding structure with the upper and lower antenna layers, wherein a portion of the second metal feeder post 309 is grounded and belongs to the grounding wire. This portion of the second metal feeder post 309 can be electrically connected to the second antenna layer 307, or it can be electrically connected to the third antenna layer 312. Of course, this portion of the second metal feeder post 309 can also be electrically connected to both the second antenna layer 307 and the third antenna layer 312. The mutual electromagnetic influence formed in the transmission of chip electrical signals can be eliminated by the grounding wire, thereby achieving the effect of electromagnetic shielding. In an optional example, the grounded second metal feeder post 309 is arranged in a circular or even manner, and is electrically connected to the corresponding second antenna layer 307 and the third antenna layer 312 above and below, thereby forming an electromagnetic shielding structure to achieve electromagnetic shielding.

[0149] like Figure 1 S8 and Figure 14-15 As shown, the second metal feeder post 309 is encapsulated by a second encapsulation layer 311 , and the second encapsulation layer 311 exposes the top surface of the second metal feeder post 309 .

[0150] Specifically, in one example, the second metal feeder post 309 is encapsulated with the second encapsulation material layer 310, and the second encapsulation material layer 310 is thinned (grinding) so that the top surface of the second metal feeder post 309 is exposed, and the thinned second encapsulation material layer 310 forms the second encapsulation layer 311. As an example, the method of encapsulating the second metal feeder post 309 with the second encapsulation material layer 310 includes one of compression molding, transfer molding, liquid sealing molding, vacuum lamination and spin coating, and the material of the second encapsulation layer 311 includes one of silicone and epoxy resin. When the second protective adhesion layer is present, the second encapsulation layer is formed on the second protective adhesion layer.

[0151] like Figure 1 S9 and Fig.16 As shown, a third antenna layer 312 electrically connected to the second metal feed post 309 is formed on the second packaging layer 311 .

[0152] Specifically, the material of the third antenna layer 312 can be copper or the like, and the structure of the third antenna layer is set according to actual conditions. The third antenna layer 312 is electrically connected to the second antenna layer 307 through the second metal feeder column 309. The multi-layer antenna layer can enhance the receiving signal capability and expand the receiving signal bandwidth. The present invention can obtain a multi-layer antenna structure layer, which can effectively shorten the conduction path between components, have better electrical properties and antenna performance, and have lower power consumption. The semiconductor chip, the rewiring layer, and the antenna metal structure are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and have lower power consumption. The process structure has high integration. The present invention uses multi-layer packaging layers, that is, a multi-layer compound antenna structure, to reduce the package size and package size.

[0153] like Figure 1 S10 and Figure 17-18 As shown, based on the temporary bonding layer 102, the rewiring layer and the supporting substrate 101 are peeled off to expose the first surface of the rewiring layer, a first opening 501 is formed in the rewiring layer from the first surface, and at least one semiconductor chip 401 (die bonder) electrically connected to the rewiring layer is formed on the first surface. For example, the semiconductor chip can be formed by a bonding method well known in the art. After the die bonder, the chip is initially fixed to the wafer through reflow soldering.

[0154] Specifically, in one example, in a subsequent step, the light-to-heat conversion layer is irradiated with a laser to separate the light-to-heat conversion layer from the rewiring layer and the supporting substrate 101. In addition, after separation, a first opening 501 may be formed by drilling a hole on the first surface of the rewiring layer, and the drilling may be performed by laser drilling technology. The first opening 501 exposes the metal wire in the rewiring layer, and the first opening defines the position where the subsequent metal bump is formed. In one example, the first opening may be formed first, and then the semiconductor chip 401 is formed on the first surface of the rewiring layer to facilitate the protection of the antenna circuit chip. There is a spacing between the first opening 501 and the semiconductor chip 401 to facilitate the subsequent packaging process, and the specific size is set according to actual needs.

[0155] As an example, the number of the semiconductor chips 401 is multiple, for example, two, and the semiconductor chip 401 includes one of an active component and a passive component, wherein the active component includes one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive component includes one of a resistor, a capacitor and an inductor, and the types of different semiconductor chips are set according to actual conditions. The present invention can integrate all active components or passive components in a packaging structure through the arrangement of different rewiring layers, and simultaneously mount active and passive components on the same wafer, which can effectively reduce the package size.

[0156] like Figure 1 S11 and Figure 19-20 As shown, a metal bump 502 electrically connected to the re-distribution layer is formed in the first opening 501 .

[0157] As an example, after forming the semiconductor chip 401 and before forming the metal bump 502 , the method further includes performing bottom filling on each semiconductor chip 401 to form a bottom filling layer 402 .

[0158] Specifically, the metal bump 502 is initially fixed in the first opening of the rewiring layer, wherein the metal bump 502 can be one of tin solder, silver solder and gold-tin alloy solder. In the present invention, the solder ball is initially fixed to the wafer through reflow soldering after ball mount. In addition, in one example, the semiconductor chip 401 is bottom-filled before forming the metal bump 502. The filling material for the bottom filling can be epoxy resin, that is, this example places the underfill process before ball mount (forming the metal bump) to prevent the metal bump (such as solder ball) from affecting the siphoning of the bottom filling glue. The bottom filling process is that the filling material flows to the bottom of the chip through capillary siphoning to fill the gaps between the bumps, and plays a role in fixing the chip after solidification. The solder ball at the edge of the chip is similar to the bump at the bottom of the chip. When the filling glue overflows, it may also attract a part of the filling glue due to capillary action. The design of the above process sequence in this example can effectively prevent the metal bump from affecting the bottom filling layer.

[0159] As an example, see Fig. 22 As shown, after forming the bottom filling layer 402, the step also includes: performing dam dispensing on each of the semiconductor chips 401 to form a dam dispensing protection layer 403, wherein the dam dispensing protection layer 403 is formed at least on the bottom and around the semiconductor chip 401, and the dam dispensing protection layer 403 and the bottom filling layer 402 surround the semiconductor chip 401.

[0160] Specifically, the present invention performs a dam glue dispensing process on the semiconductor chip 401 after it is fixed. The glue dispensing technology is used to form a dam around the semiconductor chip 401, and then glue is dispensed in the middle to form the dam glue dispensing protective layer 403. The formed dam glue dispensing protective layer 403 can improve the stability of the chip and effectively protect the semiconductor chip 401. After underfilling, that is, the semiconductor chip 401 is filled at the bottom to form a bottom filling layer, the dam glue dispensing process is performed. The dam glue dispensing protective layer 403 and the bottom filling layer 402 surround the semiconductor chip 401, thereby achieving double protection of the semiconductor chip 401 and reducing the process flow. Among them, the dam glue dispensing protective layer 403 can be formed based on the glue dispensing process, and the material of the dam glue dispensing protective layer 403 can be epoxy resin.

[0161] like Figure 1 S12 and Figure 21-23 As shown, a third packaging layer 503 is used to package the semiconductor chip 401 and the metal bump 502 , and a second opening 504 is formed in the third packaging layer 503 to expose the metal bump 502 .

[0162] Specifically, the method for forming the third packaging layer 503 includes one of compression molding, transfer molding, liquid sealing molding, vacuum lamination and spin coating, and the material of the third packaging layer 503 includes one of silicone and epoxy resin. In addition, laser technology can be used to perform a hole (laser drill) in the third packaging layer 503, such as laser drilling, to form the second opening 504. With the solution of the present invention, since only a part of the third packaging layer needs to be opened to expose the metal bump, less energy is required for laser drilling, and the time consumption is short. It is not necessary to form a through hole penetrating the upper and lower surfaces in the third packaging layer, which greatly improves the process efficiency. The present invention adopts the last laser drilling process, after the metal bump is initially fixed by reflow soldering, the third packaging layer forming (molding) process is performed, the metal bump (such as solder ball) is reinforced, and then the solder ball is exposed by laser drilling (Laser drill). This packaging process is stable and therefore has high feasibility and reliability. The laser drilling technology has high precision, strong versatility, high efficiency, low cost and significant comprehensive technical and economic benefits. In addition, when the dam dispensing protective layer is present, Fig. 22 As shown, the third packaging layer 503 simultaneously packages the dam glue dispensing layer and the protective layer, thereby improving the stability of the packaging structure.

[0163] Embodiment 2:

[0164] like Fig.23 See Figures 1 to 22 The present invention further provides an antenna packaging structure, wherein the antenna packaging structure is preferably packaged by the antenna packaging method of the present invention. Of course, the antenna packaging structure can also be packaged by other packaging methods. The antenna packaging structure includes:

[0165] a rewiring layer, the rewiring layer comprising a first surface and a second surface opposite to the first surface, and a first opening 501 opened from the first surface is formed in the rewiring layer;

[0166] A first metal feed post 303, formed on the first antenna layer 301 and electrically connected to the first antenna layer 301;

[0167] A first packaging layer 305 covers the first metal feeder post 303 , and the first packaging layer 305 exposes the top surface of the first metal feeder post 303 ;

[0168] A second antenna layer 307 is formed on the first packaging layer 305, and the second antenna layer 307 is electrically connected to the first metal feed post 303;

[0169] A second metal feed post 309, formed on the second antenna layer 307 and electrically connected to the second antenna layer 307;

[0170] A second encapsulation layer 311 covers the second metal feeder post 309 and exposes the top surface of the second metal feeder post;

[0171] A third antenna layer 312 is formed on the second packaging layer 311 and is electrically connected to the second metal feed post 309;

[0172] at least one semiconductor chip 401 bonded to the first surface and electrically connected to the rewiring layer;

[0173] A metal bump 502 is formed in the first opening 501 and is electrically connected to the rewiring layer.

[0174] The third packaging layer 503 covers the semiconductor chip 401 and the metal bump 502 . A second opening 504 is formed in the third packaging layer 503 . The second opening 504 exposes the metal bump 502 .

[0175] Specifically, in one example, the rewiring layer includes a first dielectric layer 201, a first metal wiring layer 202, a second dielectric layer 203, a conductive plug and a second metal wiring layer 204. Of course, it can also be a multi-layer metal layer and a multi-layer dielectric layer, so as to form a rewiring layer with a multi-layer stacking structure to achieve different wiring functions. Among them, the material of the dielectric layer includes one or a combination of two or more of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorine-containing glass. For example, the material of the dielectric layer is selected as PI (polyimide) to further reduce the process difficulty and process cost. The material of the metal wiring layer includes one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium.

[0176] As an example, the connection portion between the first metal feed post 303 and the first antenna layer 301 has a first lower metal layer 302, that is, at the interface where the two are in contact, the first lower metal layer is formed between the two. The material of the first metal feed post 303 includes one of Au, Ag, Cu, and Al, but is not limited to this. It can also be any metal material that can be used as a planting column. The material of the first lower metal layer 302 includes a stack of Ni layer and Au layer. The first lower metal layer 302 can effectively strengthen the bonding strength between the first metal feed post 303 and the rewiring layer and reduce the contact resistance.

[0177] As an example, the connection part between the second metal feed post 309 and the second antenna layer 307 has a second lower metal layer 308, that is, at the interface where the two are in contact, the second lower metal layer is formed between the two. The material of the second metal feed post 309 includes one of Au, Ag, Cu, and Al, but is not limited to this. It can be any metal material that can be used as a planting column. The material of the second lower metal layer 308 includes a stack of Ni layer and Au layer. The second lower metal layer 308 can effectively strengthen the bonding strength between the second metal feed post 309 and the first antenna layer 307 and reduce the contact resistance.

[0178] Specifically, the material of the first antenna layer 301 can be copper, the material of the second antenna layer 307 can be copper, and the material of the third antenna layer 312 can be copper, etc. The second antenna layer 307 is electrically connected to the first antenna layer 301 through the first metal feeder post 303, and the third antenna layer 312 is electrically connected to the second antenna layer 307 through the second metal feeder post 309. The multi-layer antenna layer can enhance the signal receiving capability and expand the received signal bandwidth. The present invention can obtain a multi-layer antenna structure layer, which can effectively shorten the conduction path between components, have better electrical properties and antenna performance, and have lower power consumption. The present invention can reduce the package size and package size by encapsulating through a multi-layer packaging layer, that is, a multi-layer compound antenna structure. The semiconductor chip, the rewiring layer, and the antenna metal structure are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and have lower power consumption and high process structure integration.

[0179] As an example, the antenna packaging structure also includes a first protective adhesion layer 306, which covers the first antenna layer 301, the first metal feed post 303 is formed on the surface of the first antenna layer 301 via the first protective adhesion layer 306, and the first packaging layer 305 is formed on the first protective adhesion layer 306.

[0180] As an example, the antenna packaging structure also includes a second protective adhesion layer (not shown in the figure), the second protective adhesion layer covers the second antenna layer 307, the second metal feed post 309 is formed on the surface of the second antenna layer 307 via the second protective adhesion layer, and the second packaging layer 311 is formed on the second protective adhesion layer.

[0181] Specifically, a first protective adhesive layer 306 covering the first antenna layer 301 is formed on the rewiring layer, the first metal feed post 303 is formed on the surface of the first antenna layer 301 via the first protective adhesive layer 306, and the first packaging layer 305 is formed on the protective adhesive layer 306. Fig.11 As shown. Optionally, the material of the first protective adhesion layer 306 includes polyimide. Since two adjacent antenna structures are separated by an antenna layer, it is easy to cause the adhesion strength between the two antenna structures to decrease and cause displacement or rupture. The present invention sets a first protective adhesion layer 306 between the two adjacent antenna structures. On the one hand, it can protect the antenna metal, and on the other hand, it can improve the adhesion performance between the two adjacent antenna structures and improve the mechanical structure strength of the antenna. Similarly, the second protective adhesion layer also has the above effect.

[0182] As an example, the material of the first encapsulation layer 305 includes one of silica gel and epoxy resin. Fig.11 As shown, when the first protective adhesion layer 306 exists, the first encapsulation layer 305 is formed on the first protective adhesion layer 306. As an example, the material of the second encapsulation layer 311 includes one of silicone and epoxy resin. In addition, when the second protective adhesion layer exists, the second encapsulation layer 311 is formed on the second protective adhesion layer.

[0183] As an example, the number of the semiconductor chips 401 is multiple, for example, two, and the semiconductor chips 401 include one of an active component and a passive component, wherein the active component includes one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive component includes one of a resistor, a capacitor, and an inductor. The present invention can integrate all active components or passive components into a packaging structure through the arrangement of different rewiring layers, and simultaneously mount active and passive components on the same wafer, which can effectively reduce the package size.

[0184] As an example, the antenna package structure further includes a bottom filling layer 402 , and the bottom filling layer 402 is formed between the semiconductor chip 401 and the rewiring layer.

[0185] As an example, the material of the bottom filling layer 402 includes epoxy resin. In one example, the bottom filling layer 402 is an epoxy resin layer.

[0186] As an example, the antenna packaging structure further includes a dam glue dispensing protection layer 403 , and the bottom filling layer 402 and the dam glue dispensing protection layer 403 surround the semiconductor chip 401 .

[0187] As an example, the material of the dam glue-dispensing protection layer 403 includes epoxy resin. In one example, the dam glue-dispensing protection layer is an epoxy resin layer.

[0188] Specifically, the first opening 501 exposes the metal wire in the rewiring layer, and the first opening defines the position where the subsequent metal bump is formed. There is a spacing between the first opening 501 and the semiconductor chip 401 to facilitate the subsequent packaging process, and the specific size is set according to actual needs. In addition, the metal bump 502 can be initially fixed on the rewiring layer, and the metal bump 502 can be one of tin solder, silver solder and gold-tin alloy solder.

[0189] The packaging structure of the present invention also forms the bottom filling layer 402, thereby improving the packaging stability of the semiconductor chip, and further forms the dam glue dispensing protection layer 403. The formed dam glue dispensing protection layer 403 can improve the stability of the chip and effectively protect the semiconductor chip 401. The dam glue dispensing protection layer 403 and the bottom filling layer 402 surround the semiconductor chip 401, thereby achieving double protection of the semiconductor chip 401 and reducing the process flow. The material of the bottom filling layer 402 can be epoxy resin, and the material of the dam glue dispensing protection layer 403 can be epoxy resin. In addition, the material of the third packaging layer 503 includes one of silicone and epoxy resin. The formed third packaging layer reinforces the metal bumps initially fixed on the rewiring layer. Laser technology can be used to open holes (laser drill) in the third packaging layer 503 to form the second opening 504. With the solution of the present invention, since only a portion of the third packaging layer needs to be opened to expose the metal bumps, less energy is required and the time is short when performing laser drilling. There is no need to form through holes that penetrate the upper and lower surfaces in the third packaging layer, which greatly improves the process efficiency. In addition, when the bottom filling layer and the dam glue dispensing protective layer are present, such as Fig. 22 As shown, the third packaging layer 503 simultaneously packages the dam glue dispensing layer and the protective layer, thereby improving the stability of the packaging structure.

[0190] As described above, the antenna packaging structure and packaging method of the present invention protect the semiconductor chip based on the third packaging layer, and simultaneously package the chip and the metal bump, which can effectively improve the stability of the packaging structure. A multi-layer antenna structure is formed by multi-layer metal feeder columns and multi-layer packaging layers, which can reduce the package size and enhance the receiving signal capability and expand the receiving signal bandwidth. The bottom filling layer is formed by the bottom filling process to improve the stability of the chip. The bottom filling process is performed before the metal bump is formed, which can effectively prevent the metal bump from affecting the bottom filling. The dam dispensing process is added to the wafer-level packaging to form a dam dispensing protection layer to provide double protection for the chip. , and can effectively reduce the packaging process flow and improve the process cycle. By arranging the lines of different rewiring layers, all active components or passive components are integrated into a packaging structure, which can effectively reduce the package size. The semiconductor chip, rewiring layer and antenna metal and other structures are set to a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical and high-efficiency antenna performance, and have lower power consumption and high process structure integration. The fan-out packaging method is used to package the antenna structure, which effectively reduces the package volume, so that the antenna packaging structure has a higher degree of integration and better packaging performance, and has broad application prospects in the field of semiconductor packaging.

[0191] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An antenna packaging method, characterized in that: The packaging method comprises the steps of: Providing a supporting substrate, and forming a temporary bonding layer on the supporting substrate; forming a rewiring layer on the temporary bonding layer, wherein the rewiring layer comprises a first surface connected to the temporary bonding layer and a second surface opposite to the first surface; forming a first antenna layer electrically connected to the rewiring layer on the second surface; Forming a first metal feed post electrically connected to the first antenna layer on the first antenna layer; Using a first packaging layer to encapsulate the first metal feeder post, and making the first packaging layer expose the top surface of the first metal feeder post; Forming a second antenna layer electrically connected to the first metal feeder post on the first packaging layer; forming a second metal feed post electrically connected to the second antenna layer on the second antenna layer; Using a second packaging layer to encapsulate the second metal feeder post, and making the second packaging layer expose the top surface of the second metal feeder post; Forming a third antenna layer electrically connected to the second metal feed post on the second packaging layer; Based on the temporary bonding layer, the rewiring layer and the supporting substrate are peeled off to expose the first surface of the rewiring layer, a first opening is formed in the rewiring layer from the first surface, and at least one semiconductor chip electrically connected to the rewiring layer is formed on the first surface; forming a metal bump in the first opening electrically connected to the rewiring layer; as well as The semiconductor chip and the metal bump are packaged with a third packaging layer, and a second opening is formed in the third packaging layer, wherein the second opening exposes the metal bump.

2. The antenna packaging method according to claim 1, characterized in that: The supporting substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate and a ceramic substrate.

3. The antenna packaging method according to claim 1, characterized in that: The temporary bonding layer includes a light-to-heat conversion layer, wherein the light-to-heat conversion layer is irradiated with laser to separate the light-to-heat conversion layer from the rewiring layer and the supporting substrate, thereby peeling off the rewiring layer and the supporting substrate.

4. The antenna packaging method according to claim 1, characterized in that: Forming the rewiring layer comprises the steps of: forming a first dielectric layer on the surface of the temporary bonding layer; Forming a seed layer on the surface of the first dielectric layer by a sputtering process, forming a first metal layer on the seed layer, and etching the first metal layer and the seed layer to form a patterned first metal wiring layer; Forming a second dielectric layer on the surface of the patterned first metal wiring layer, and etching the second dielectric layer to form a second dielectric layer having patterned through holes; A conductive plug is filled in the patterned through hole, and then a second metal layer is formed on the surface of the second dielectric layer by a sputtering process, and the metal layer is etched to form a patterned second metal wiring layer.

5. The antenna packaging method according to claim 1, characterized in that: After forming the first antenna layer, the step of: forming a first protective adhesion layer covering the first antenna layer on the rewiring layer, the first metal feeder post is formed on the surface of the first antenna layer via the first protective adhesion layer, and the first packaging layer is formed on the first protective adhesion layer; and / or, after forming the second antenna layer, the step of: forming a second protective adhesion layer covering the second antenna layer on the first packaging layer, the second metal feeder post is formed on the surface of the second antenna layer via the second protective adhesion layer, and the second packaging layer is formed on the second protective adhesion layer.

6. The antenna packaging method according to claim 1, characterized in that: Before forming the first metal feeder post, the step also includes: forming a first lower metal layer on the surface of the first antenna layer, wherein the first metal feeder post is formed on the surface of the first lower metal layer, and the first metal feeder post is formed by a wire bonding process, an electroplating process, or a chemical plating process; and / or, before forming the second metal feeder post, the step also includes: forming a second lower metal layer on the surface of the second antenna layer, wherein the second metal feeder post is formed on the surface of the second lower metal layer, and the second metal feeder post is formed by a wire bonding process, an electroplating process, or a chemical plating process.

7. The antenna packaging method according to claim 1, characterized in that: There are multiple semiconductor chips, and the semiconductor chips include one of active components and passive components. The active components include one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive components include one of a resistor, a capacitor and an inductor.

8. The antenna packaging method according to any one of claims 1 to 7, characterized in that: After forming the semiconductor chip and before forming the metal bump, the method further includes performing bottom filling on each semiconductor chip to form a bottom filling layer, wherein the bottom filling layer is formed between the semiconductor chip and the rewiring layer.

9. The antenna packaging method according to claim 8, characterized in that: After forming the bottom filling layer, the method also includes the steps of: performing dam dispensing on each semiconductor chip to form a dam dispensing protective layer, wherein the dam dispensing protective layer is formed at least on the bottom and around the semiconductor chip, and the dam dispensing protective layer and the bottom filling layer surround the semiconductor chip, and the third packaging layer also encapsulates the dam dispensing protective layer.

10. An antenna packaging structure, characterized in that: The antenna packaging structure comprises: a rewiring layer, the rewiring layer comprising a first surface and a second surface opposite to the first surface, and a first opening opened from the first surface is formed in the rewiring layer; a first antenna layer formed on the second surface and electrically connected to the rewiring layer; A first metal feed post is formed on the first antenna layer and is electrically connected to the first antenna layer; a connecting portion between the first metal feed post and the first antenna layer has a first lower metal layer; a first packaging layer, covering the first metal feeder post and exposing the top surface of the first metal feeder post; The material of the first packaging layer includes one of silicone and epoxy resin; a second antenna layer, formed on the first packaging layer and electrically connected to the first metal feed post; a second metal feed post formed on the second antenna layer and electrically connected to the second antenna layer; a second packaging layer, covering the second metal feeder post and exposing a top surface of the second metal feeder post; a third antenna layer, formed on the second packaging layer and electrically connected to the second metal feed post; at least one semiconductor chip bonded to the first surface and electrically connected to the rewiring layer; a metal bump formed in the first opening and electrically connected to the rewiring layer; and The third packaging layer covers the semiconductor chip and the metal bump, and a second opening is formed in the third packaging layer, and the second opening exposes the metal bump.

11. The antenna packaging structure according to claim 10, characterized in that: The material of the first metal feeder post includes one of Au, Ag, Cu, and Al, and the material of the first lower metal layer includes a stack of Ni layer and Au layer; and / or the connecting part of the second metal feeder post and the second antenna layer has a second lower metal layer, and the material of the second metal feeder post includes one of Au, Ag, Cu, and Al, and the material of the second lower metal layer includes a stack of Ni layer and Au layer.

12. The antenna packaging structure according to claim 10, characterized in that: The antenna packaging structure also includes a first protective adhesion layer, which covers the first antenna layer, the first metal feeder pole is formed on the surface of the first antenna layer via the first protective adhesion layer, and the first packaging layer is formed on the first protective adhesion layer; and / or, the antenna packaging structure also includes a second protective adhesion layer, which covers the second antenna layer, the second metal feeder pole is formed on the surface of the second antenna layer via the second protective adhesion layer, and the second packaging layer is formed on the second protective adhesion layer.

13. The antenna packaging structure according to claim 10, characterized in that: The material of the second encapsulation layer includes one of silicone and epoxy resin; the material of the third encapsulation layer includes one of silicone and epoxy resin.

14. The antenna packaging structure according to claim 10, characterized in that: There are multiple semiconductor chips, and the semiconductor chips include one of active components and passive components. The active components include one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive components include one of a resistor, a capacitor and an inductor.

15. The antenna packaging structure according to any one of claims 10 to 14, characterized in that: The antenna package structure further includes a bottom filling layer formed between the semiconductor chip and the rewiring layer.

16. The antenna packaging structure according to claim 15, characterized in that: The antenna packaging structure also includes a dam glue protection layer, which is formed at least on the bottom and around the semiconductor chip, and the dam glue protection layer and the bottom filling layer surround the semiconductor chip, and the third packaging layer also encapsulates the dam glue protection layer.

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