Etching Machine Structure with Magnetic Field of Magnetic Flux Line Shielding Control Reaction Chamber

Abstract

The present invention provides an etching machine structure for controlling the magnetic field of a reaction chamber by shielding magnetic lines of force, which includes: a first plasma reaction cavity having a first reaction chamber; a first coil module disposed around the periphery of the first reaction chamber; and a first magnetic line of force shielding module disposed around the periphery of the first coil module. By implementing the present invention, it is possible to block and / or reflect the magnetic lines of force and / or electromagnetic waves of the first coil module from diffusing outward and control the shape of the magnetic lines of force, so as to effectively create more manufacturing process parameters for more precise production of various products.

Description

Technical Field

[0001] The present invention relates to an etching machine structure for controlling the magnetic field of a reaction chamber by magnetic field shielding, particularly an etching machine structure for controlling the magnetic field of a reaction chamber by magnetic field shielding for plasma reaction control such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning of a reaction chamber during a manufacturing process, and so on. Background Art

[0002] In the field of semiconductor integrated circuit manufacturing, growth of different material thin films, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning of a reaction chamber during a manufacturing process, etc. can all generally be achieved by plasma technology.

[0003] In the field of vacuum coating, proper application of high-density plasma can not only obtain a dense coating quality but also complete the coating at a low temperature, avoiding adverse effects of high temperature on the coating quality. Therefore, how to obtain high-density plasma is a key manufacturing process technology that various equipment manufacturers are vigorously developing.

[0004] Moreover, in the etching manufacturing process, the distribution and control of plasma density are the key factors affecting the etching rate and etching uniformity. Therefore, how to effectively control the magnetic field has become an important parameter in both the vacuum coating and etching manufacturing processes. Summary of the Invention

[0005] The present invention relates to an etching machine structure for controlling the magnetic field of a reaction chamber by magnetic field shielding, which mainly aims to solve the problem of how to create more parameters for controlling electroplasma so as to produce various products more precisely.

[0006] The present invention provides an etching machine structure for controlling the magnetic field of a reaction chamber by magnetic field shielding, which includes: a first plasma reaction cavity having a first reaction chamber; a first coil module disposed around the periphery of the first reaction chamber in the horizontal direction; and a first magnetic field shielding module disposed around the periphery of the first coil module in the horizontal direction for blocking and / or reflecting the magnetic field lines and / or electromagnetic waves of the first coil module from diffusing outward and controlling the shape of the magnetic field lines.

[0007] Preferably, the first magnetic field shielding module has a plurality of shielding louvers, and the length of each shielding louver is greater than or equal to the vertical height of the first coil module.

[0008] Preferably, it further includes: a second plasma reaction cavity having a second reaction chamber communicating with the first reaction chamber; a second coil module disposed around the periphery of the second reaction chamber in the horizontal direction; and a second magnetic field line shielding module disposed around the periphery of the second coil module in the horizontal direction for blocking and / or reflecting the magnetic field lines and / or electromagnetic waves of the second coil module from diffusing outward and controlling the shape of the magnetic field lines.

[0009] The present invention further provides an etching machine structure for shielding and controlling the magnetic field of a reaction chamber, which includes: a first plasma reaction cavity having a first reaction chamber; a first coil module disposed around the periphery of the first reaction chamber in the horizontal direction; a second plasma reaction cavity having a second reaction chamber communicating with the first reaction chamber; a second coil module disposed around the periphery of the second reaction chamber in the horizontal direction; and a second magnetic field line shielding module disposed around the periphery of the second coil module for blocking and / or reflecting the magnetic field lines and / or electromagnetic waves of the second coil module from diffusing outward and controlling the shape of the magnetic field lines.

[0010] Preferably, the second magnetic field line shielding module has a plurality of shielding louvers, and the length of each shielding louver is greater than or equal to the vertical height of the second coil module.

[0011] Preferably, the opening or closing of the shielding louvers is controlled by a control unit.

[0012] Preferably, the control unit performs full-area control on the shielding louvers.

[0013] Preferably, the control unit performs two-equal-area control on the shielding louvers.

[0014] Preferably, the control unit performs four-equal-area control on the shielding louvers.

[0015] Preferably, for any of the shielding louvers under area control, the bottom thereof has a louver gear slidably engaged with the tooth row of a tooth disc, and the tooth disc is slidably engaged with a slide rail. Moreover, the tooth row of the tooth disc is driven by a motor gear of a motor, and the opening or closing of the shielding louver is achieved under the condition that the control unit controls the forward and reverse rotation of the motor.

[0016] By implementing the present invention, at least the following improved effects can be achieved:

[0017] 1. The plasma density can be effectively controlled.

[0018] 2. Magnetic fields with various variations or combinations can be generated. And

[0019] 3. The manufacturing process can be made more diversified.

[0020] In order to enable any person skilled in the relevant art to understand the technical content of the present invention and implement it accordingly, and based on the content disclosed in this specification, the scope of the patent application, and the drawings, any person skilled in the relevant art can easily understand the relevant objectives and advantages of the present invention. Therefore, the detailed features and advantages of the present invention will be described in detail in the embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 FIG. 1 is a first cross-sectional embodiment diagram of an etching machine structure for shielding magnetic field lines to control the magnetic field in a reaction chamber.

[0022] Figure 2 FIG. 2 is a second cross-sectional embodiment diagram of an etching machine structure for shielding magnetic field lines to control the magnetic field in a reaction chamber.

[0023] Figure 3A FIG. 3 is a third cross-sectional embodiment diagram of an etching machine structure for shielding magnetic field lines to control the magnetic field in a reaction chamber.

[0024] Figure 3B FIG. 4 is a third three-dimensional embodiment diagram of an etching machine structure for shielding magnetic field lines to control the magnetic field in a reaction chamber.

[0025] Figure 4 FIG. 5 is an embodiment diagram of a shielding shutter and its driving mechanism components.

[0026] Figure 5 FIG. 6 is an embodiment diagram of the overall area fitting degree change of the first or second shielding module.

[0027] Figure 6 FIG. 7 is an embodiment diagram of the fitting degree change of the 2-equal division area of the first or second shielding module.

[0028] Figure 7 FIG. 8 is an embodiment diagram of the fitting degree change of the 4-equal division area of the first or second shielding module.

[0029] Figure 8 FIG. 9 is a comparison diagram of the plasma energy absorption characteristic curves before and after using the shielding module.

[0030] Figure 9 FIG. 10 is a comparison diagram of the plasma density change of different diameter shielding modules in a half-chamber simulation.

[0031] Figure 10 FIG. 11 is a comparison table of the plasma density without using and using the shielding module at different powers.

[0032] Figure 11 FIG. 12 is an embodiment of the comparison of the electric field strength and the magnetic flux density Figure 1 .

[0033] Figure 12 FIG. 13 is an embodiment of the comparison of the electric field strength and the magnetic flux density Figure 2 .

[0034]

Description of Main Component Symbols

[0035] 100: The first embodiment of the etching machine structure for shielding magnetic field lines to control the magnetic field in the reaction chamber

[0036] 200: The second embodiment of the etching machine structure for shielding magnetic field lines to control the magnetic field in the reaction chamber

[0037] 300: The third embodiment of the etching machine structure for shielding magnetic field lines to control the magnetic field in the reaction chamber

[0038] 110: The first plasma reaction cavity 111: The first reaction chamber

[0039] 120: The first coil module 130: The first magnetic field line shielding module

[0040] 131: The shielding louvers 131a, 131b: Two group units

[0041] 131a, 131b, 131c, 131d…: Four group units 132: The louver gear

[0042] 140: The gear disk 141: The tooth row

[0043] 142: The slide rail 151: The motor

[0044] 152: The motor gear 210: The second plasma reaction cavity 220: The second coil module 230: The second magnetic field line shielding module

[0045] 211: The second reaction chamber 30: The control unit

[0046] 310: Full area control 320: Two-equal-area control

[0047] 330: Four-equal-area control d1: The length of the shielding louvers

[0048] d2: The vertical height of the first coil module d3: The vertical height of the second coil module

[0049] L1: Characteristic curve L2: Characteristic curve

[0050] A: Area B: Area Detailed Embodiment

[0051] As Figure 1 shown, it is the first embodiment 100 of an etching machine structure for shielding magnetic field lines to control the magnetic field in the reaction chamber, which includes: the first plasma reaction cavity 110; the first coil module 120; and the first magnetic field line shielding module 130.

[0052] As Figure 2 shown, a second embodiment 200 of an etching machine structure for shielding and controlling the magnetic field of a reaction chamber is provided. It further includes, based on the first embodiment 100: a second plasma reaction chamber 210; a second coil module 220; and a second magnetic field line shielding module 230.

[0053] As shown in Figure 3, a third embodiment 300 of an etching machine structure for shielding and controlling the magnetic field of a reaction chamber includes: a first plasma reaction chamber 110; a first coil module 120; a second plasma reaction chamber 210; a second coil module 220; and a second magnetic field line shielding module 230.

[0054] The components of each of the above embodiments are described in detail as follows:

[0055] As Figures 1 to 3B shown, the first plasma reaction chamber 110 has a first reaction chamber 111; and the second plasma reaction chamber 210 is disposed above the first plasma reaction chamber 110 and has a second reaction chamber 211 communicating with the first reaction chamber 111.

[0056] The first reaction chamber 111 and the second reaction chamber 211 are plasma reaction chambers for performing plasma reactions such as chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning of a manufacturing process reaction chamber... and so on.

[0057] The first coil module 120 is disposed around the periphery of the first reaction chamber 111 to provide the high-frequency electromagnetic wave energy required for the plasma reaction in the first reaction chamber 111. Similarly, the second coil module 220 is disposed around the periphery of the second reaction chamber 211 to provide the high-frequency electromagnetic wave energy required for the plasma reaction in the second reaction chamber 211.

[0058] The first magnetic field line shielding module 130 may have a plurality of shielding shutters 131, and the length d1 of each shielding shutter is greater than or equal to the vertical height d2 of the first coil module. Thus, the magnetic field lines and / or electromagnetic wave energy of the first coil module 120 can be effectively shielded or reflected.

[0059] Similarly, the second magnetic field line shielding module 230 has a plurality of shielding shutters 131, and the length d1 of each shielding shutter is greater than or equal to the vertical height d3 of the second coil module. Thus, the magnetic field lines and / or electromagnetic wave energy of the second coil module 220 can be effectively shielded or reflected.

[0060] As Figure 4As shown, the shielding shutter 131 of the first magnetic field line shielding module 130 or the second magnetic field line shielding module 230 has a shutter gear 132 at its bottom. Each shutter gear 132 is slidably engaged with the tooth row 141 of the tooth disc 140, and the tooth disc 140 is slidably engaged with the slide rail 142. The tooth row 141 is driven by a motor gear 152 of a motor 151, for example. Finally, when the control unit 30 controls the forward and reverse rotation of the motor 151, the opening or closing of the shielding shutter 131 can be achieved.

[0061] By arranging the first magnetic field line shielding module 130 and the second magnetic field line shielding module 230 respectively around the peripheries of the first coil module 120 and the second coil module 220, they can be used to block and / or reflect the magnetic field lines and / or electromagnetic waves of the first coil module 120 and the second coil module 220 from diffusing outward, and the shape of the magnetic field lines can be controlled. Therefore, the plasma energy in the first reaction chamber 111 and the second reaction chamber 211 can be changed respectively, and the operation range can be increased.

[0062] As Figures 5 to 7 shown, for the first magnetic field line shielding module 130 or the second magnetic field line shielding module 230 in the above embodiments, the opening or closing of the shielding shutter 131 can be controlled by the control unit 30. According to the control mode, it can be divided into full-area control 310, two-equal-area control 320, four-equal-area control 330, etc.

[0063] As Figure 5 shown, in the full-area control 310, all the shielding shutters 131 are adjusted to the same specific angle synchronously at the same time.

[0064] As Figure 6 shown, in the two-equal-area control 320, all the shielding shutters 131 are divided into two group units 131a and 131b, and all the shielding shutters 131 within each group unit are adjusted to their respective same specific angles respectively.

[0065] As Figure 7 shown, in the four-equal-area control 330, all the shielding shutters 131 are divided into four group units 131a, 131b, 131c, and 131d, and all the shielding shutters 131 within each group unit are adjusted to their respective same specific angles respectively.

[0066] To effectively prove the progressive effects of the above embodiments, taking the second plasma reaction chamber 210 with the second magnetic field line shielding module 230 as an example, the relevant simulations are described as follows:

[0067] As Figure 8As shown, when the second magnetic field line shielding module 230 is not used, from the characteristic curve L1, it can be seen that in region A: when the second coil module 220 inputs a relatively low power energy, a low power absorption effect will be generated, thus making it impossible to effectively maintain the plasma; and in region B: when the second coil module 220 inputs a relatively high power energy, it will easily cause partial damage.

[0068] When the second magnetic field line shielding module 230 is used, from the characteristic curve L2, it can be seen that in region A: even when the second coil module 220 inputs a relatively low power energy, the plasma can be effectively maintained; and in region B: when the second coil module 220 inputs a relatively high power energy, it is also less likely to cause partial damage.

[0069] As Figure 9 shown, a simulation is carried out with high neon in the second plasma reaction chamber 210. The simulation shows that it is important to use the second magnetic field line shielding module 230 and it must be properly designed to optimize the magnetic field. When the second magnetic field line shielding module 230 is not used ( Figure 9 a)), the magnetic field lines diverge outward and the plasma density will be relatively low; but if the second magnetic field line shielding module 230 is used ( Figure 9 b)), the magnetic field lines converge towards the second reaction chamber 211 and the plasma density will increase, that is, the red intensity region increases.

[0070] As Figure 10 shown, from the relevant simulation results, when the size of the second reaction chamber 211 is 70 mm in all cases, comparing the situation of not using and using the second magnetic field line shielding module 230, for the plasma density in the second reaction chamber 211, when the output power of the second coil module 220 is relatively low at 300 W or 400 W, for those without using the second magnetic field line shielding module 230, there will be a problem of low plasma density (NG, No Good; poor), but for those using the second magnetic field line shielding module 230, there is no problem of low plasma density.

[0071] As Figure 11 shown, Figure 11 (a) is the elevation view of the electric field intensity of the second reaction chamber 211, and Figure 11 (b) is the magnetic flux density curve graph of the second reaction chamber 211. From Figure 11 (a), it can be seen that when the left half of the second magnetic field line shielding module 230 is in the open state and the right half of the second magnetic field line shielding module 230 is in the closed state, it causes the magnetic field on the right half to be pushed inward, resulting in Figure 11 in (b), the magnetic flux density on the right side is higher than that on the left side.

[0072] As Figure 12 shown, Figure 12(a) is an elevation view of the electric field strength of the second reaction chamber 211, and also Figure 12 (b) is a graph of the magnetic flux density of the second reaction chamber 211. As can be seen from Figure 12 (a), when both the left and right second magnetic field line shielding modules 230 are in the open state, so that Figure 12 in (b), the magnetic flux densities on the left and right sides are the same.

[0073] However, the above embodiments are used to illustrate the features of the present invention, and their purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, rather than limiting the patent scope of the present creation. Therefore, any equivalent modifications or amendments that are completed without departing from the spirit disclosed by the present invention should still be included in the scope of the patent application described.

Claims

1. An etching machine structure for shielding magnetic field lines to control the magnetic field of a reaction chamber, characterized in that It includes: A first plasma reaction chamber, which has an arc-shaped annular outer surface and has a first reaction chamber; A first coil module, which is disposed around the periphery of the first reaction chamber in the horizontal direction; And A first magnetic field line shielding module, which is disposed around the periphery of the first coil module in the horizontal direction, for reflecting the magnetic field lines and / or electromagnetic waves of the first coil module from diffusing outward and controlling the shape of the magnetic field lines: Wherein the first magnetic field line shielding module has a plurality of shielding louvers, and the length of each shielding louver is greater than or equal to the vertical height of the first coil module; The opening or closing of the shielding louvers is controlled by a control unit.

2. The etching machine structure according to claim 1, characterized in that It further has: A second plasma reaction chamber, which has a second reaction chamber communicating with the first reaction chamber; A second coil module, which is disposed around the periphery of the second reaction chamber in the horizontal direction; And A second magnetic field line shielding module, which is disposed around the periphery of the second coil module in the horizontal direction, for blocking and / or reflecting the magnetic field lines and / or electromagnetic waves of the second coil module from diffusing outward and controlling the shape of the magnetic field lines; Wherein the second magnetic field line shielding module has a plurality of shielding louvers, and the length of each shielding louver is greater than or equal to the vertical height of the second coil module; The opening or closing of the shielding louvers is controlled by a control unit.

3. An etching machine structure for shielding magnetic field lines to control the magnetic field of a reaction chamber, characterized in that It includes: A first plasma reaction chamber, which has an arc-shaped annular outer surface and has a first reaction chamber; A first coil module, which is disposed around the periphery of the first reaction chamber in the horizontal direction; A second plasma reaction chamber, which has an arc-shaped annular outer surface and has a second reaction chamber communicating with the first reaction chamber; A second coil module, which is disposed around the periphery of the second reaction chamber in the horizontal direction; And A second magnetic field line shielding module, which is disposed around the periphery of the second coil module in the horizontal direction, for reflecting the magnetic field lines and / or electromagnetic waves of the second coil module from diffusing outward and controlling the shape of the magnetic field lines; Wherein the second magnetic field line shielding module has a plurality of shielding louvers, and the length of each shielding louver is greater than or equal to the vertical height of the second coil module; The opening or closing of the shielding louvers is controlled by a control unit.

4. The etching machine structure according to claim 1 or 2 or 3, characterized in that: Wherein the control unit performs full-area control on the shielding louvers.

5. The etching machine structure according to claim 1 or 2 or 3, characterized in that: Wherein the control unit performs two-equal-area control on the shielding louvers.

6. The etching machine structure according to claim 1 or 2 or 3, characterized in that: Wherein the control unit performs four-equal-area control on the shielding louvers.

7. The etching machine structure according to any one of claims 1, 2, or 3, characterized in that: Wherein the bottom of the shielding louvers has a louver gear slidingly engaged with the tooth row of a toothed disk, and the toothed disk is slidingly engaged on a slide rail, and the tooth row of the toothed disk is driven by a motor gear of a motor, and when the control unit controls the forward and reverse rotation of the motor, the opening or closing of the shielding louvers is achieved.

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