Electroplating device and cleaning method

Abstract

The present invention provides an electroplating device and a cleaning method. The electroplating device comprises a wafer clamp, a liquid storage tank, a cleaning pipe, a control valve and a nozzle. A middle section of the cleaning pipe in contact with the electroplating liquid is arranged in the liquid storage tank. The middle section of the cleaning pipe is heated by the electroplating liquid with a preset temperature to obtain a heated cleaning liquid, which can effectively improve resource utilization without the need to add additional heating equipment, thereby reducing costs and reducing the footprint of the equipment. Cleaning liquid with the same temperature as the electroplating liquid is provided through the nozzle to clean the conductive contact pins and sealing components in the wafer clamp, so as to effectively remove residues and reduce the difficulty of temperature control of the cleaning liquid. By regulating the rotation speed of the wafer clamp and the flow rate of the cleaning liquid at the nozzle, the cleaning efficiency and cleaning effect are improved, and the influence of the cleaning liquid on the electroplating liquid in the liquid storage tank and the electroplating chamber can be effectively reduced.

Description

Technical Field

[0001] The invention belongs to the field of microelectronics manufacturing and relates to an electroplating device and a cleaning method. Background Art

[0002] With the continuous advancement of microelectronics technology, electronic information systems are developing in the direction of multifunctionality, miniaturization and low cost. Among them, packaging technology is playing an increasingly important role, directly affecting the electrical, thermal, optical and mechanical properties of devices and integrated circuits, and determining the size, weight, ease of use, life, performance and cost of electronic products.

[0003] For integrated circuit manufacturers, one of the effective ways to maintain their leadership in smaller size, lower cost and higher performance is to integrate more advanced chip packaging technology into the entire manufacturing process. Compared with traditional packaging technology, these advanced packaging technologies can ensure higher quality chip connections and lower power consumption. Although most of these technologies are still in the undeveloped stage, overall, they still have great advantages and prospects in the future integrated circuit manufacturing industry.

[0004] In the packaging process, an electroplating process is usually used to prepare a metal layer. For example, after the wafer undergoes CVD deposition, sputtering, etc. to form a metal seed layer, a photolithography process is performed: including coating photoresist, exposure, and development to form a pattern that exposes the metal seed layer, and then an electroplating process is performed to form a metal layer, such as copper metal conductive connecting lines, silver metal conductive connecting lines, etc.

[0005] In the current electroplating device, the wafer chuck includes a conductive pin and a seal that contacts the wafer, wherein the conductive pin should evenly contact the seed layer on the front of the wafer, and at the same time, the conductive pin cannot directly contact the electroplating solution. Therefore, a seal is needed to isolate the electroplating solution from reaching the edge of the front of the wafer, otherwise, the edge of the front of the wafer will be plated with metal, and the uniformity of the metal film deposited on the wafer will become very poor. After the electroplating is completed, there are often residues on the conductive pin and the seal, such as residual electroplating solution, or even photoresist. This part of the residue will affect the wafer process, such as causing uneven electric field distribution on the wafer, wafer sealing failure, and wafer removal failure when the robot transfers the wafer after electroplating.

[0006] Therefore, it is necessary to provide an electroplating device and a cleaning method to effectively clean the wafer fixture and remove residues. Summary of the invention

[0007] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an electroplating device and a cleaning method for solving the cleaning problem of the wafer clamp in the prior art.

[0008] To achieve the above-mentioned object and other related objects, the present invention provides an electroplating device, comprising:

[0009] A wafer clamp, used for clamping a wafer, the wafer clamp having a conductive contact pin and a sealing member;

[0010] A liquid storage tank, through which the electroplating liquid is contained, and the electroplating liquid has a preset temperature;

[0011] a cleaning pipe, through which the cleaning liquid is transmitted, the cleaning pipe comprising a cleaning pipe inlet section, a cleaning pipe middle section and a cleaning pipe outlet section, wherein the cleaning pipe inlet section and the cleaning pipe outlet section are located outside the liquid storage tank, and the cleaning pipe middle section is located inside the liquid storage tank and in contact with the electroplating liquid, so as to heat the cleaning liquid by the electroplating liquid having a preset temperature;

[0012] A control valve, the control valve is connected to the cleaning pipe, and the operation of the cleaning liquid is controlled by the control valve;

[0013] A nozzle is connected to the outlet section of the cleaning pipe, and the cleaning liquid sprayed by the nozzle cleans the conductive contact pins and the sealing component in the wafer clamp.

[0014] Optionally, the caliber range of the nozzle includes 1 mm to 2 mm, and the flow rate of the cleaning liquid provided by the nozzle is ≥0.5 L / min.

[0015] Optionally, the rotation speed of the wafer clamp is ≥150r / min.

[0016] Optionally, the preset temperature of the electroplating solution is ≥30°C; and the temperature of the cleaning solution sprayed by the nozzle is ≥30°C.

[0017] Optionally, the shape of the middle section of the cleaning tube includes one or a combination of spiral and zigzag shapes.

[0018] Optionally, the outlet section of the cleaning pipe includes N branch pipelines to clean the wafer fixtures located in different electroplating chambers, where N≥1.

[0019] Optionally, the outer side of the outlet section of the cleaning pipe is coated with a thermal insulation layer.

[0020] Optionally, the metal ions in the electroplating solution include one of Ni ions, Cu ions and Ag ions; and the cleaning solution includes deionized water.

[0021] The present invention also provides a cleaning method, comprising the following steps:

[0022] Providing the above-mentioned electroplating device, and making the electroplating solution have a preset temperature, so as to heat the cleaning solution in the cleaning pipe through the electroplating solution;

[0023] The cover plate of the wafer fixture is raised, and the control valve is opened so that the cleaning liquid sprayed through the nozzle can clean the conductive contact pins and the sealing component in the wafer fixture.

[0024] Optionally, after cleaning, a drying step is also included, wherein the rotation speed of the wafer clamp includes a first rotation speed and a second rotation speed, the second rotation speed is greater than the first rotation speed, the first rotation speed is applied to cleaning the wafer clamp, and the second rotation speed is applied to drying the wafer clamp.

[0025] As described above, in the electroplating device and cleaning method of the present invention, a middle section of a cleaning tube in contact with the electroplating liquid is arranged in a liquid storage tank, and the middle section of the cleaning tube is heated by a plating liquid having a preset temperature to obtain a heated cleaning liquid. The plating liquid having a preset temperature is fully utilized to heat the cleaning liquid, which can effectively improve resource utilization and does not require additional heating equipment, thereby reducing costs and reducing the equipment footprint; a cleaning liquid having the same temperature as the plating liquid is provided through a nozzle to clean the conductive contact pins and seals in the wafer fixture to effectively remove residues and reduce the difficulty of temperature control of the cleaning liquid; the cleaning efficiency and cleaning effect are improved by regulating the rotation speed of the wafer fixture and the flow rate of the cleaning liquid at the nozzle, and the influence of the cleaning liquid on the plating liquid in the liquid storage tank and the electroplating chamber can be effectively reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Shown is a schematic structural diagram of the electroplating device in the present invention.

[0027] Figure 2 Shown is a front view of the wafer chuck in the present invention.

[0028] Figure 3 Shown is a schematic diagram of the three-dimensional structure of the wafer clamp in the present invention.

[0029] Figure 4 Display as Figure 3 Schematic diagram of the local enlarged structure of the B area formed along the A-A' section.

[0030] Figure 5 Shown is a process flow chart of the cleaning method of the present invention.

[0031] Component number description

[0032] 100 Liquid storage tank

[0033] 200 Plating solution

[0034] 300 Heater

[0035] 401 Cleaning pipe inlet section

[0036] 402 cleaning pipe middle section

[0037] 403 Cleaning pipe outlet section

[0038] 500 Cleaning fluid

[0039] 600, 601 control valve

[0040] 700 Nozzle

[0041] 800 Wafer Chuck

[0042] 801 Cover

[0043] 802 Conductive contact pin

[0044] 803 Seals

[0045] 900 Plating Chamber

[0046] 901 Overflow Tank

[0047] 902 Baffle

[0048] 110 Flow direction

[0049] 120 Rotation direction DETAILED DESCRIPTION

[0050] In the electroplating process, some electroplated metals have relatively high requirements for the temperature of the plating solution. For example, Ni metal requires a temperature of about 50°C during electroplating. The inventors have found that this temperature will slightly "soften" the photoresist on the wafer. When there is no obvious external force, this "softening" phenomenon will not cause deformation of the photoresist. However, in the electroplating process, after the wafer is edge washed, the part of the edge of the wafer with photoresist and the seal need to be squeezed into contact through the cover plate to prevent the edge of the wafer and the back of the wafer from contacting the plating solution, and the metal seed layer exposed at the edge of the wafer and the conductive contact pin need to be squeezed into contact through the cover plate to form a uniformly distributed electric field on the wafer. Therefore, there is an external force in the electroplating process, so that the "softened" photoresist will remain on the seal and the conductive contact pin. After the electroplating is completed, the wafer fixture will be cooled when it is separated from the electroplating solution, and the "softened" photoresist will be "solidified" again, so that some photoresist will remain on the sealing parts and conductive contact pins of the wafer fixture. After electroplating, when the robot takes the wafer, it is easy for the wafer to stick to the wafer fixture, resulting in failure of wafer taking, or uneven electric field distribution on the wafer due to the residual photoresist on the conductive contact pin, or failure of wafer sealing due to the residual photoresist on the seal, etc., which affects product quality. However, when using normal temperature water to clean the wafer fixture, it is found that normal temperature water can only clean the residual electroplating solution on the wafer fixture, and the cleaning effect on the residual photoresist on the wafer fixture is not obvious. Therefore, after research by the inventor, a new electroplating device and cleaning method are proposed to effectively clean the residues after electroplating on the wafer fixture, especially the residual photoresist.

[0051] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] See also Figure 1 to Figure 5 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0053] like Figure 1As shown, this embodiment provides an electroplating device, which includes a wafer clamp 800, a liquid storage tank 100, a cleaning pipe, a control valve 600 and a nozzle 700. The wafer clamp 800 is used to clamp the wafer, and includes a conductive contact pin 802 and a sealing member 803. Figure 4 As shown. The liquid storage tank 100 contains the plating liquid 200, and the plating liquid 200 has a preset temperature; the cleaning liquid 500 is transmitted through the cleaning pipe, and the cleaning pipe includes a cleaning pipe inlet section 401, a cleaning pipe middle section 402 and a cleaning pipe outlet section 403, the cleaning pipe inlet section 401 and the cleaning pipe outlet section 403 are located outside the liquid storage tank 100, and the cleaning pipe middle section 402 is located in the liquid storage tank 100 and contacts the plating liquid 200, so that the cleaning liquid 500 is heated by the plating liquid 200 with the preset temperature; the control valve 600 is connected to the cleaning pipe, and the operation of the cleaning liquid 500 is controlled by the control valve 600; the nozzle 700 is connected to the cleaning pipe outlet section 403, and the cleaning liquid 500 sprayed by the nozzle 700 cleans the conductive contact pins 802 and the sealing member 803 located in the wafer fixture 800.

[0054] The electroplating device of this embodiment is provided with a cleaning pipe middle section 402 in contact with the electroplating liquid 200 in the liquid storage tank 100. The cleaning pipe middle section 402 is heated by the electroplating liquid 200 with a preset temperature to obtain the heated cleaning liquid 500. The electroplating liquid 200 with a preset temperature is fully utilized to heat the cleaning liquid 500, which can effectively improve resource utilization without adding additional heating equipment, thereby reducing costs and equipment footprint; the nozzle 700 is sprayed to clean the conductive contact pins 802 and the seal 803 in the wafer clamp 800 to effectively remove residues.

[0055] Specifically, the liquid storage tank 100 includes a heater 300, so as to heat the electroplating solution 200 in the liquid storage tank 100 through the heater 300 to obtain the electroplating solution 200 with a preset temperature. The type and specific installation position of the heater 300 can be set as needed, and no excessive restrictions are made here. The electroplating device includes an electroplating chamber 900 for electroplating wafers. The electroplating chamber 900 is connected to the liquid storage tank 100 so as to provide the electroplating solution 200 to the electroplating chamber 900 through the liquid storage tank 100. In this embodiment, the electroplating chamber 900 preferably adopts an electroplating chamber with an overflow trough 901, so that the electroplating solution 200 in the electroplating chamber 900 can overflow back to the liquid storage tank 100 through the overflow trough 901, so that the electroplating solution 200 can be recycled. The overflow trough 901 is provided with a baffle 902, and the baffle 902 can prevent the cleaning solution 500 from entering the electroplating solution 200 in the electroplating chamber 900 to avoid contamination of the electroplating solution 200. The nozzle 700 is connected to the cleaning pipe outlet section 403, and the nozzle 700 is preferably installed on the inner wall of the overflow trough 901 to avoid additional installation of a bracket and reduce costs. The wafer fixture 800 can be adjusted to be lifted and rotated according to the process requirements, so as to carry the wafer in the electroplating chamber 900 for the electroplating process. The wafer fixture 800 includes a cover plate 801, the conductive contact pin 802 and a sealing member 803. Figure 2 , Figure 3 and Figure 4 Of course, the electroplating device may also be equipped with other equipment as needed, such as a pump body to promote the operation of the electroplating solution 200 and the cleaning solution 500, a thermometer and a flow meter to measure the temperature of the electroplating solution 200 and the cleaning solution 500, etc., which are not excessively limited here.

[0056] As an example, the caliber range of the nozzle 700 includes 1 mm to 2 mm, and the flow rate of the cleaning liquid 500 provided by the nozzle 700 is ≥0.5 L / min.

[0057] Specifically, the cleaning liquid 500 can flow into the nozzle 700 from the cleaning pipe inlet section 401, through the cleaning pipe middle section 402 and the cleaning pipe outlet section 403 through the control and regulation of the control valve 600, and then spray the wafer fixture 800 for cleaning. Figure 1The flow direction 110 of the cleaning liquid 500 is shown. Preferably, the control valve 600 adopts a pneumatic control valve to accurately control the cleaning liquid 500. After the cleaning liquid 500 is regulated by the control valve 600, it can provide the required impact force to rinse the residue on the wafer clamp 800, but the type of the control valve 600 is not limited to this. The caliber range of the nozzle 700 may include 1mm, 1.5mm, 2mm, etc. The control valve 600 can adjust the flow rate of the cleaning liquid 500 according to the size of the caliber of the nozzle 700, so that the flow rate of the cleaning liquid 500 provided by the nozzle 700 is ≥0.5L / min to ensure that sufficient impact force is provided. The flow rate of the cleaning liquid 500 provided by the nozzle 700 may include 0.5L / min, 1L / min, 2L / min, etc. The selection of the caliber of the nozzle 700 and the flow rate of the cleaning liquid 500 mainly considers the cleaning effect of the cleaning liquid 500, and is related to the type and temperature of the cleaning liquid 500. It can be selected according to needs. In this embodiment, after comprehensively considering the cleaning effect, applicability and energy utilization, the nozzle 700 with a caliber of 1mm is preferred, and the flow rate of the cleaning liquid 500 provided by the nozzle 700 is 1L / min, but it is not limited to this.

[0058] As an example, the rotation speed of the wafer clamp 800 is ≥150 r / min.

[0059] Specifically, Figure 1 The rotation direction 120 of the wafer fixture 800 is shown, preferably rotating in a clockwise or counterclockwise direction. By adjusting the rotation speed of the wafer fixture 800, the cleaning efficiency can be improved, and the cleaning liquid 500 sprayed on the wafer fixture 800 will be thrown into the collecting groove formed by the baffle 902 and the inner wall of the overflow groove 901 due to the centrifugal effect, and discharged from the drainage pipe (not shown) connected to the collecting groove, thereby avoiding the influence of the cleaning liquid 500 on the electroplating liquid 200, wherein the rotation speed of the wafer fixture 800 can be 150r / min, 200r / min, 300r / min, 500r / min, etc.

[0060] As an example, after cleaning, a drying step may also be included, wherein the rotation speed of the wafer clamp 800 includes a first rotation speed and a second rotation speed, the second rotation speed is greater than the first rotation speed, the first rotation speed is applied to the cleaning of the wafer clamp 800, and the second rotation speed is applied to the drying of the wafer clamp 800.

[0061] Specifically, during the cleaning stage, when the rotation speed of the wafer clamp 800 is adjusted to the first rotation speed, the cleaning efficiency can be improved due to the rotation of the wafer clamp 800, and the cleaning liquid 500 sprayed on the wafer clamp 800 will be thrown into the collecting trough formed by the baffle 902 and the inner wall of the overflow trough 901 due to the centrifugal effect, and discharged from the drainage pipe connected to the collecting trough, thereby avoiding the influence of the cleaning liquid 500 on the electroplating liquid 200 located in the electroplating chamber 900; after the cleaning stage is over, stop spraying the cleaning liquid 500, and when the rotation speed of the wafer clamp 800 is adjusted to the second rotation speed, due to the rotation of the wafer clamp 800, the residual cleaning liquid 500 can be thrown into the collecting trough, thereby accelerating the drying of the wafer clamp 800 and improving the cleaning efficiency and cleaning effect. The range of the first speed is ≥150r / min, and the range of the second speed is ≥150r / min. In this embodiment, the first speed of the wafer clamp 800 is preferably 200r / min, and the second speed is 300r / min, but it is not limited to this and can be set as needed. Of course, the first speed and the second speed can also be equal, or the second speed can be less than the first speed.

[0062] As an example, the preset temperature of the electroplating solution 200 is ≥30° C.; the temperature of the cleaning solution 500 sprayed by the nozzle 700 is ≥30° C.

[0063] Specifically, after the plating solution 200 is heated by the heater 300, the plating solution 200 that meets the plating process temperature can be obtained. The preset temperature can be set according to the type of the plating solution 200, such as 30°C, 45°C, 50°C, 65°C, etc. After the cleaning solution 500 is heated by the plating solution 200, the temperature of the cleaning solution 500 sprayed by the nozzle 700 can be ≥30°C, such as 30°C, 45°C, 50°C, 65°C, etc. Preferably, the cleaning solution 500 has the same temperature as the plating solution 200, so that the nozzle 700 provides the cleaning solution 500 with the same temperature as the photoresist "softening", so that the "cured" photoresist is effectively softened and removed due to the spraying of the cleaning solution 500, reducing the difficulty of temperature control of the cleaning solution 500. Among them, the metal ions in the plating solution 200 may include one of Ni ions, Cu ions and Ag ions, and the cleaning solution 500 may use deionized water that has little effect on the plating solution 200, but the selection of the types of the plating solution 200 and the cleaning solution 500 is not limited to this. In this embodiment, the plating solution 200 uses a plating solution containing Ni ions, and the cleaning solution 500 uses deionized water, so the preset temperature of the plating solution 200 is 50°C, and the temperature of the cleaning solution 500 sprayed by the nozzle 700 is preferably 50°C. Further, it is preferred that the outer side of the cleaning pipe outlet section 403 is coated with an insulation layer (not shown) to facilitate the insulation of the cleaning solution 500 located in the cleaning pipe outlet section 403. The specific material of the insulation layer is not limited here and can be selected according to needs.

[0064] As an example, the shape of the middle section 402 of the cleaning tube includes one or a combination of spiral and zigzag shapes.

[0065] Specifically, to ensure that the cleaning fluid 500 is sufficiently heated and to reduce the footprint of the equipment, the shape of the middle section 402 of the cleaning pipe is preferably a spiral shape or a tortuous shape formed by a straight pipe or a tortuous shape formed by a combination of a curved pipe and a straight pipe, but it is not limited to this and a straight pipe may also be used directly.

[0066] As an example, the liquid level of the plating solution 200 exceeds the middle section 402 of the cleaning pipe, so that the plating solution 200 covers the middle section 402 of the cleaning pipe, so that the middle section 402 of the cleaning pipe is fully heated to improve efficiency, but it is not limited to this, and it is sufficient to ensure that the middle section 402 of the cleaning pipe is in contact with the plating solution 200. In this embodiment, it is preferred that the plating solution 200 covers the middle section 402 of the cleaning pipe, so that the middle section 402 of the cleaning pipe is fully heated, the heating time is reduced, and the efficiency is improved.

[0067] As an example, the cleaning pipe outlet section 403 includes N branch pipelines to clean the wafer fixtures 800 located in different electroplating chambers 900 , where N≥1.

[0068] Specifically, Figure 1 As shown, the electroplating device includes area M and area N, wherein: Figure 1 Only the structure of region M is shown. For the structure of region N, reference may be made to region M, that is, region N also includes the electroplating chamber 900, overflow tank 901, baffle 902, wafer fixture 800, and nozzle 700. The outlet section 403 of the cleaning pipe includes a branch pipeline connected to region N, the branch pipeline is connected to the nozzle 700 in region N, and the control valve 601 is installed on the branch pipeline, so that through the control of the control valve 601, the wafer fixture 800 located in region N can be cleaned through the nozzle 700, so that the setting of the branch pipeline can further improve the work efficiency. Among them, the value of N may include 1, 2, 3, etc., which can be selected according to needs. In this embodiment, N is only taken as 1 as an example, but it is not limited to this.

[0069] like Figure 5 As shown, this embodiment provides a cleaning method, which specifically includes the following steps:

[0070] Providing the electroplating device so that the electroplating solution 200 in the liquid storage tank 100 has the preset temperature;

[0071] In the absence of a wafer, the cover plate 801 of the wafer fixture 800 is raised, and the height of the wafer fixture 800 is adjusted so that the conductive contact pins 802 and the sealing member 803 can be arranged corresponding to the position of the nozzle 700, ensuring that the cleaning liquid 500 sprayed from the nozzle 700 can cover the conductive contact pins 802 and the sealing member 803;

[0072] To clean, adjust the wafer fixture 800 to rotate; adjust the control valve 600 so that the cleaning liquid 500 is heated from the cleaning pipe inlet section 401, through the cleaning pipe middle section 402 heated by the electroplating solution 200, and then enters the nozzle 700 through the cleaning pipe outlet section 403, and then sprays on the conductive contact pin 802 and the sealing member 803 through the nozzle 700 for cleaning. The heated cleaning liquid 500 can "soften" the residual photoresist, and then use the impact force of the cleaning liquid 500 to flush the "softened" photoresist away from the conductive contact pin 802 and the sealing member 803, and use the high rotation speed of the wafer fixture 800 to throw the cleaning liquid 500 containing the photoresist into the collecting tank, effectively preventing the cleaning liquid 500 from falling into the electroplating solution 200, and completing the cleaning.

[0073] As an example, after cleaning, a drying step may also be included, wherein the rotation speed of the wafer clamp 800 includes the first rotation speed and the second rotation speed, the second rotation speed is greater than the first rotation speed, the first rotation speed is applied to the cleaning of the wafer clamp 800, and the second rotation speed is applied to the drying of the wafer clamp 800.

[0074] Specifically, after cleaning is completed, the spraying of the cleaning liquid 500 is stopped, the rotation speed of the wafer clamp 800 is increased from the first rotation speed to the second rotation speed, and the cleaning liquid 500 on the wafer clamp 800 is dried. During cleaning, the range of the first rotation speed is ≥150r / min, and the range of the second rotation speed is ≥150r / min. In this embodiment, it is preferred that the first rotation speed of the wafer clamp 800 is 200r / min and the second rotation speed is 300r / min, but it is not limited thereto and can be set as needed. Of course, the first rotation speed and the second rotation speed can also be equal, or the second rotation speed can be less than the first rotation speed.

[0075] Through the cleaning method, the electroplating solution 200 remaining on the wafer fixture 800 can be effectively cleaned, and the photoresist remaining on the wafer fixture 800 can be cleaned at the same time. The electroplating solution 200 located in the liquid storage tank 100 can be fully utilized to heat the cleaning solution 500, which can effectively save heater and equipment space, etc., thereby achieving a better cleaning effect and cost saving on the wafer fixture 800, and improving the cleaning efficiency, so that cleaning can be performed in a shorter time, and will not have a significant impact on the temperature of the electroplating solution 200 located in the liquid storage tank 100.

[0076] In summary, the electroplating device and cleaning method of the present invention, a middle section of a cleaning tube in contact with the electroplating liquid is set in the liquid storage tank, and the middle section of the cleaning tube is heated by the electroplating liquid with a preset temperature to obtain a heated cleaning liquid, and the electroplating liquid with a preset temperature is fully utilized to heat the cleaning liquid, which can effectively improve resource utilization, and no additional heating equipment is required, thereby reducing costs and reducing the equipment footprint; a cleaning liquid with the same temperature as the electroplating liquid is provided through a nozzle to clean the conductive contact pins and seals in the wafer fixture to effectively remove residues and reduce the difficulty of temperature control of the cleaning liquid; by regulating the rotation speed of the wafer fixture and the flow rate of the cleaning liquid at the nozzle, the cleaning efficiency and cleaning effect are improved, and the influence of the cleaning liquid on the electroplating liquid in the liquid storage tank and the electroplating chamber can be effectively reduced. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0077] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An electroplating device, characterized in that: The electroplating device comprises: A wafer clamp, used for clamping a wafer, the wafer clamp having a conductive contact pin and a sealing member; A liquid storage tank, through which the electroplating liquid is contained, and the electroplating liquid has a preset temperature; a cleaning pipe, through which the cleaning liquid is transmitted, the cleaning pipe comprising a cleaning pipe inlet section, a cleaning pipe middle section and a cleaning pipe outlet section, wherein the cleaning pipe inlet section and the cleaning pipe outlet section are located outside the liquid storage tank, and the cleaning pipe middle section is located inside the liquid storage tank and in contact with the electroplating liquid, so as to heat the cleaning liquid by the electroplating liquid having a preset temperature; A control valve, the control valve is connected to the cleaning pipe, and the operation of the cleaning liquid is controlled by the control valve; A nozzle is connected to the outlet section of the cleaning pipe, and the cleaning liquid sprayed by the nozzle cleans the conductive contact pins and the sealing component in the wafer clamp.

2. The electroplating device according to claim 1, characterized in that: The caliber range of the nozzle includes 1mm to 2mm, and the flow rate of the cleaning liquid provided by the nozzle is ≥0.5L / min.

3. The electroplating device according to claim 1, characterized in that: The rotation speed of the wafer clamp is ≥150r / min.

4. The electroplating device according to claim 1, characterized in that: The preset temperature of the electroplating solution is ≥30°C; the temperature of the cleaning solution sprayed by the nozzle is ≥30°C.

5. The electroplating device according to claim 1, characterized in that: The shape of the middle section of the cleaning pipe includes a tortuous shape.

6. The electroplating device according to claim 1, characterized in that: The outlet section of the cleaning pipe includes N branch pipelines to clean the wafer fixtures located in different electroplating chambers, wherein N≥1.

7. The electroplating device according to claim 1, characterized in that: The outer side of the outlet section of the cleaning pipe is coated with a heat-insulating layer.

8. The electroplating device according to claim 1, characterized in that: The metal ions in the electroplating solution include one of Ni ions, Cu ions and Ag ions; the cleaning solution includes deionized water.

9. A cleaning method, characterized in that: The following steps are involved: Providing an electroplating device as claimed in any one of claims 1 to 8, wherein the electroplating solution has a preset temperature so as to heat the cleaning solution in the cleaning pipe through the electroplating solution; The cover plate of the wafer fixture is raised, and the control valve is opened so that the cleaning liquid sprayed through the nozzle can clean the conductive contact pins and the sealing component in the wafer fixture.

10. The cleaning method according to claim 9, characterized in that: After cleaning, a drying step is also included, wherein: The rotation speed of the wafer clamp includes a first rotation speed and a second rotation speed, the second rotation speed is greater than the first rotation speed, the first rotation speed is applied to cleaning the wafer clamp, and the second rotation speed is applied to drying the wafer clamp.

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