Light-emitting packaging structure and manufacturing method thereof

Abstract

A light-emitting packaging structure and a manufacturing method thereof. The light-emitting packaging structure includes a light-transmitting adhesive layer, a substrate, and at least one light-emitting diode chip. The light-transmitting adhesive layer has a first surface and a second surface relative to each other. The substrate is located on the first surface of the light-transmitting adhesive layer. The light-emitting diode chip is located on the second surface of the light-transmitting adhesive layer. The light-transmitting adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, the vertical projection area of ​​the second portion on the substrate at least completely covers the vertical projection area of ​​the light-emitting diode chip on the substrate, and the thickness of the second portion is less than or equal to the thickness of the first portion. Since the light-transmitting adhesive layer will not produce obvious glue creeping due to the setting of the light-emitting diode chip, and the light-emitting diode chip is not easy to produce obvious displacement during the setting process, the yield of the light-emitting packaging structure can be improved.

Description

Technical Field

[0001] The present disclosure relates to a light-emitting packaging structure and a method for manufacturing the light-emitting packaging structure. Background Art

[0002] Since light-emitting diodes (LEDs) have the advantages of long life, low power consumption and simple driving, they are widely used in lighting, backlighting, LED displays, etc. Generally speaking, LED displays often use red, green and blue LED chips as pixels, and the pixels can be arranged to form a full-color LED display.

[0003] However, such LED displays often face problems such as uneven light emission, difficulty in electrical control, inability to reduce size, and high manufacturing costs. Therefore, how to effectively solve the above problems is an urgent issue to be solved. Summary of the invention

[0004] A technical aspect of the present disclosure is a light-emitting packaging structure.

[0005] According to one embodiment of the present disclosure, a light-emitting packaging structure includes a light-transmitting adhesive layer, a substrate, and at least one light-emitting diode chip. The light-transmitting adhesive layer has a first surface and a second surface opposite to each other. The substrate is located on the first surface of the light-transmitting adhesive layer. The light-emitting diode chip is located on the second surface of the light-transmitting adhesive layer. The light-transmitting adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, the vertical projection area of ​​the second portion on the substrate at least completely covers the vertical projection area of ​​the light-emitting diode chip on the substrate, and the thickness of the second portion is less than or equal to the thickness of the first portion.

[0006] In one embodiment of the present disclosure, an inclined surface is provided between the second surface of the first portion and the second surface of the second portion. The inclined surface gradually extends from the second surface of the second portion away from the LED chip to the second surface of the first portion.

[0007] In one embodiment of the present disclosure, the height of the first portion of the light-transmissive adhesive layer is less than 20% of the height of the light-emitting diode chip.

[0008] In one embodiment of the present disclosure, there are multiple light emitting diode chips.

[0009] In one embodiment of the present disclosure, the LED chip includes a red LED chip, a green LED chip or a blue LED chip.

[0010] In one embodiment of the present disclosure, the light-emitting package structure further includes a plurality of filling particles located in the light-transmissive adhesive layer. The filling particles are used to adjust the path of light emitted by the light-emitting diode chip.

[0011] In one embodiment of the present disclosure, the light emitting diode chip emits blue light, and the light emitting package structure further includes a wavelength conversion material located in the light-transmissive adhesive layer. The wavelength conversion material absorbs part of the blue light and converts it into a color light of a corresponding wavelength.

[0012] In one embodiment of the present disclosure, the substrate is a light-transmissive substrate.

[0013] In one embodiment of the present disclosure, the light-emitting package structure further includes a packaging layer located on the second surface of the light-transmissive adhesive layer and covering the light-emitting diode chip.

[0014] Another technical aspect of the present disclosure is a method for manufacturing a light-emitting packaging structure.

[0015] According to an embodiment of the present disclosure, a method for manufacturing a light-emitting package structure includes: forming a light-transmitting adhesive material on a carrier; heating the light-transmitting adhesive material, wherein the maximum rheological loss factor (tan δ) of the light-transmitting adhesive material is max The value of is between 0.5 and 2.5; transferring the light-transmitting adhesive material from the carrier to the substrate; disposing at least one light-emitting diode chip on the light-transmitting adhesive material; and heating the light-transmitting adhesive material to form a light-transmitting adhesive layer, so that the light-emitting diode chip is fixed to the light-transmitting adhesive layer.

[0016] In one embodiment of the present disclosure, the maximum temperature range for heating the light-transmissive adhesive material is approximately between 110° C. and 150° C.

[0017] In one embodiment of the present disclosure, heating the light-transmissive adhesive material to form the light-transmissive adhesive layer is performed at a temperature between 80° C. and 160° C.

[0018] In one embodiment of the present disclosure, transferring the light-transmitting adhesive material from a carrier to a substrate includes: placing the light-transmitting adhesive material on the substrate so that the substrate and the carrier are respectively located on two opposite surfaces of the light-transmitting adhesive material; heating and pressurizing the carrier, the light-transmitting adhesive material and the substrate; and utilizing the different adhesion of the light-transmitting adhesive material to the substrate and the carrier to cause the light-transmitting adhesive material to detach from the carrier and adhere to the substrate.

[0019] In one embodiment of the present disclosure, the light-transmissive adhesive layer has a first portion and a second portion. The first portion surrounds the second portion, the vertical projection area of ​​the second portion on the substrate at least completely covers the vertical projection area of ​​the light-emitting diode chip on the substrate, and the thickness of the second portion is less than or equal to the thickness of the first portion.

[0020] In one embodiment of the present disclosure, after forming the light-transmissive adhesive material on the carrier, it further includes doping a plurality of filling particles or wavelength conversion materials into the light-transmissive adhesive material.

[0021] According to the above-mentioned embodiment of the present disclosure, during the manufacturing process of the light-emitting package structure, the light-transmitting adhesive material is first heated to form a semi-solid colloid state, and since the maximum rheological loss factor (tan δ) of the light-transmitting adhesive material max The value of is between 0.5 and 2.5, so the light-transmitting adhesive material can have appropriate fluidity. In this way, the light-transmitting adhesive material will not produce obvious glue creeping due to the setting of the light-emitting diode chip, and the light-emitting diode chip is not easy to produce obvious displacement during the setting process, thereby effectively fixing the light-emitting diode chip to the substrate through the subsequently formed light-transmitting adhesive layer to improve the yield of the light-emitting packaging structure. In addition, the light-transmitting adhesive layer of the light-emitting packaging structure formed by the above-mentioned manufacturing method may have a first part and a second part surrounded by the first part, wherein the light-emitting diode chip is set on the second part, and the thickness of the second part is less than or equal to the thickness of the first part. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to make the above and other objects, features, advantages and embodiments of the present invention more clearly understood, the detailed description of the attached drawings is as follows:

[0023] Figure 1 A schematic side view of a light-emitting package structure according to an embodiment of the present disclosure is shown;

[0024] Figure 2 A schematic side view of a light emitting package structure according to another embodiment of the present disclosure is shown;

[0025] Figure 3 A schematic side view of a light emitting package structure according to another embodiment of the present disclosure is shown;

[0026] Figure 4 A flow chart showing a method for manufacturing a light-emitting package structure according to an embodiment of the present disclosure is shown;

[0027] FIG. 5A to FIG. 5C Draw Figure 1 The storage modulus (G') and rheological loss factor (tanδ)-time (t) relationship diagram of the material of the light-transmissive adhesive layer at different temperatures (T);

[0028] Figures 6 to 11 Schematic diagrams showing various steps of a method for manufacturing a light-emitting package structure according to an embodiment of the present disclosure are shown.

[0029]

Explanation of symbols

[0030] 100, 100a, 100b: light-emitting packaging structure

[0031] 110: Translucent adhesive layer

[0032] 111: First surface

[0033] 112: Part 1

[0034] 113: Second Surface

[0035] 114: Part 2

[0036] 120: Substrate

[0037] 130: Light-emitting diode chip

[0038] 130R: Red light emitting diode chip

[0039] 130G: Green light emitting diode chip

[0040] 130B: Blue light emitting diode chip

[0041] 131: Side surface

[0042] 140: Conductive pad

[0043] 141: Lower surface

[0044] 150: Filling particles

[0045] 160: Encapsulation layer

[0046] 161: Lower surface

[0047] 170: Wavelength conversion material

[0048] 180: Translucent viscose material

[0049] 190: Carrier board

[0050] 191: Surface

[0051] L1~L3: Curve

[0052] T: Temperature

[0053] G': Storage modulus

[0054] tanδ: rheological loss factor

[0055] (tanδ) max : Maximum rheological loss factor

[0056] A1~A2: Area

[0057] S10~S50: Steps

[0058] H1~H5: Thickness

[0059] Q: Inclined surface DETAILED DESCRIPTION

[0060] The following will disclose multiple embodiments of the present disclosure with the accompanying drawings. For the purpose of clear description, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present disclosure. In other words, in some embodiments of the present disclosure, these practical details are not necessary. In addition, in order to simplify the drawings, some known and commonly used structures and elements will be depicted in a simple schematic manner in the drawings.

[0061] Figure 1 A side view schematic diagram of a light-emitting package structure 100 according to an embodiment of the present disclosure is shown. The light-emitting package structure 100 includes a light-transmitting adhesive layer 110, a substrate 120, and at least one light-emitting diode chip 130. The light-transmitting adhesive layer 110 has a first surface 111 and a second surface 113 opposite to each other. The substrate 120 is located on the first surface 111 of the light-transmitting adhesive layer 110, and the light-emitting diode chip 130 is located on the second surface 113 of the light-transmitting adhesive layer 110. In some embodiments, the substrate 120 is a light-transmitting substrate, such as a sapphire substrate, a glass substrate, a transparent conductive substrate, or a light-transmitting substrate containing a conductive circuit. In addition, the light-emitting package structure 100 further includes a conductive pad 140, which can be located on the surface of the light-emitting diode chip 130 opposite to the light-transmitting adhesive layer 110 to provide an electrical connection function.

[0062] In some embodiments, the number of LED chips 130 may be multiple, for example, the LED chips 130 include a red LED chip 130R, a green LED chip 130G, or a blue LED chip 130B of the same or different light colors. Figure 1 As shown, the light emitting package structure 100 may include a red light emitting diode chip 130R, a green light emitting diode chip 130G, and a blue light emitting diode chip 130B which are arranged adjacent to each other to form a pixel unit.

[0063] When the LED chip 130 generates light of the corresponding wavelength, the light passes through the light-transmitting adhesive layer 110 and the substrate 120 in sequence and is emitted from the substrate 120. Since the substrate 120 is a light-transmitting substrate and the light-transmitting adhesive layer 110 is formed of a light-transmitting adhesive material. The light-transmitting adhesive material includes any light-transmitting polymer material, so it will not affect the penetration of light, thereby maintaining the optical quality of the light-emitting package structure 100. The above-mentioned light-transmitting polymer material may include methyl methacrylate (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polystyrene (PS), polypropylene (PP), polyamide (PA), polycarbonate (PC), polyimide (PI), epoxy, silicone, polydimethylsiloxane (PDMS) or a combination of any two or more thereof, but is not intended to limit the present disclosure.

[0064] In some embodiments, the light-emitting package structure 100 further includes a plurality of filling particles 150 in the light-transmissive adhesive layer 110. The filling particles 150 are used to adjust the path of the light emitted by the light-emitting diode chip 130. The filling particles 150 may include titanium dioxide (TiO2), silicon dioxide (SiO2), aluminum oxide (Al2O3), boron nitride (BN), zinc oxide (ZnO), or a combination of any two or more thereof. By filling the light-transmissive adhesive layer 110 with the filling particles 150 of different materials and sizes, the path of the light can be adjusted to meet the needs of the designer.

[0065] In some embodiments, the light-transmissive adhesive layer 110 has a first portion 112 and a second portion 114 on the second surface 113, the first portion 112 surrounds the second portion 114, and the LED chip 130 is disposed on the second surface 113 of the second portion 114. In other words, a vertical projection area A1 of the second portion 114 on the substrate 120 at least completely covers a vertical projection area A2 of the LED chip 130 on the substrate 120. In some embodiments, a vertical projection area A1 of the second portion 114 on the substrate 120 is larger than a vertical projection area A2 of the LED chip 130 on the substrate 120. In other embodiments, a vertical projection area A1 of the second portion 114 on the substrate 120 completely overlaps with a vertical projection area A2 of the LED chip 130 on the substrate 120.

[0066] In some embodiments, the arrangement of the LED chip 130 may cause the second portion 114 of the light-transmissive adhesive layer 110 to be slightly concave, so that the thickness H2 of the second portion 114 is less than the thickness H1 of the first portion 112, and the first portion 112 surrounds a portion of the LED chip 130. In this case, an inclined surface Q is provided between the second surface 113 of the first portion 112 of the light-transmissive adhesive layer 110 and the second surface 113 of the second portion 114, and the inclined surface Q gradually extends from the second surface 113 of the second portion 114 away from the side surface 131 of the LED chip 130 to the second surface 113 of the first portion 112. In other words, the inclined surface Q connects the second surface 113 of the second portion 114 and the second surface 113 of the first portion 112. In this way, the second surface 113 of the second portion 114 of the light-transmissive adhesive layer 110 and the inclined surface Q together present an outwardly expanding concave shape, and the inclined surface Q does not contact the side surface 131 of the LED chip 130. In other embodiments, the arrangement of the LED chip 130 does not cause the second portion 114 of the light-transmissive adhesive layer 110 to be slightly concave, so that the thickness H2 of the second portion 114 is equal to the thickness H1 of the first portion 112. Regardless of whether the second portion 114 of the light-transmissive adhesive layer 110 is concave, the first portion 112 of the light-transmissive adhesive layer 110 in the above embodiments does not creep along the side surface 131 of the LED chip 130. In addition, the thickness H1 of the first portion 112 of the light-transmissive adhesive layer 110 is approximately between 5 μm and 50 μm.

[0067] In other embodiments, the light-transmitting adhesive layer 110 produces slight adhesive creeping, and the height of the adhesive creeping of the first portion 112 of the light-transmitting adhesive layer 110 is less than 20% of the height of the LED chip 130. In a preferred embodiment, the height of the adhesive creeping of the first portion 112 of the light-transmitting adhesive layer 110 is less than 10% of the height of the LED chip 130.

[0068] Figure 2 A schematic side view of a light-emitting package structure 100a according to another embodiment of the present disclosure is shown. In some embodiments, the light-emitting package structure 100a further includes a packaging layer 160. The packaging layer 160 is located on the second surface 113 of the light-transmissive adhesive layer 110 and covers the light-emitting diode chip 130. In addition, the lower surface 161 of the packaging layer 160 is flush with the lower surface 141 of the conductive pad 140, so that the conductive pad 140 is exposed by the packaging layer 160 to provide an electrical connection function, which is convenient for further electrical connection to an external circuit or conductive structure.

[0069] Figure 3 A side view of a light emitting package structure 100 b according to another embodiment of the present disclosure is shown. Figure 3The light emitting package structure 100b and Figure 2 The difference between the light-emitting package structure 100a and the light-emitting package structure 100b is that each light-emitting diode chip 130 is a blue light-emitting diode chip 130B. In other words, each light-emitting diode chip 130 emits blue light. In some embodiments, the light-emitting package structure 100b further includes a wavelength conversion substance 170 located in the light-transmissive adhesive layer 110. When the blue light emitted by the light-emitting diode chip 130 passes through the light-transmissive adhesive layer 110, the wavelength conversion substance 170 located in the light-transmissive adhesive layer 110 can absorb part of the blue light and convert it into a color light of a corresponding wavelength (for example, white light). In this way, each light-emitting diode chip 130 can form white light through the wavelength conversion substance 170, so that the light-emitting package structure 100 including a blue light-emitting diode chip 130B can be regarded as a pixel unit.

[0070] In some embodiments, the wavelength conversion material 170 includes an organic light-emitting material. For example, the organic light-emitting material includes a single molecule, a multi-molecule, an oligomer, a polymer, or a combination of any two or more thereof having one or more specific functional groups. The functional groups include perylene, benzimidazole, naphthalene, anthracene, phenanthrene, fluorine, 9-fluorine, carbazole, glutarimide, 1,3-diphenylbenzene, 2,3-dihydro-1h-benzo[de]isoquinoline-1,3-dione, benzopyrene, pyrene, pyridine, and thiophene.

[0071] In some embodiments, the wavelength conversion material 170 includes an inorganic luminescent material. For example, the inorganic luminescent material includes Y3Al5O 12 (YAG), LuYAG, GaYAG, SrS:Eu 2+ 、SrGa2S4:Eu 2+ 、ZnS:Cu + 、ZnS:Ag + 、Y2O2S:Eu 2+ 、La2O2S:Eu 2+ 、Gd2O2S:Eu 2+ 、SrGa2S4:Ce 3+,ZnS:Mn 2+ 、SrS:Eu 2+ 、CaS:Eu 2+ 、(Sr 1-x Ca x )S:Eu 2+ 、Ba2SiO4:Eu 2+ 、Sr2SiO4:Eu 2+ 、(Mg,Ca,Sr,Ba)3Si2O7:Eu 2+ 、Ca8Mg(SiO4)4Cl2:Eu 2+ 、(Mg,Ca,Sr,Ba)2SiO4:Eu 2+ 、(Sr,Ca,Ba)Si x O y N z :Eu 2+ 、(Ca,Mg,Y)Si w Al x O y N z :Ce 2+ 、Ca2Si5N8:Eu 2+ 、(Ca,Mg,Y)Si w Al x O y N z :Eu 2+ 、K2GeF6:Mn 4+ 、K2SiF6:Mn 4+ 、K2TiF6:Mn 4+ 、Sr(LiAl3N4):Eu 2+ 、Si 6–n Al n O n N 8–n (n=0-4.2):Eu 2+ Or a combination of any two or more of the above.

[0072] In some embodiments, the wavelength conversion material 170 includes a quantum dot material. For example, the quantum dot material includes CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe , HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnST e, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaP Sb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, CsPbX3 or Cs4PbX6, wherein X is chlorine, bromine, iodine or a combination of any two or more of the above.

[0073] In some embodiments, the surface of the quantum dot material may include a modification treatment, such as a ligand exchange treatment, a microemulsification treatment, an organic material coating, an inorganic material coating, a mesoporous particle pore coating, or a combination of any two or more of the above. The quantum dot material after the modification treatment may have a better luminescence lifetime.

[0074] It should be understood that the connection relationship and functions of the components described above will not be repeated, and will be described first. In the following description, a method for manufacturing the light-emitting package structure 100 will be described.

[0075] Figure 4The flowchart of the manufacturing method of the light-emitting package structure 100 according to one embodiment of the present disclosure is shown. The manufacturing method of the light-emitting package structure 100 comprises the following steps. In step S10, a light-transmitting adhesive material is formed on a carrier. In step S20, the light-transmitting adhesive material is heated, wherein the maximum rheological loss factor (tan δ) of the light-transmitting adhesive material is max The value of is between 0.5 and 2.5. In step S30, the light-transmitting adhesive material is transferred from the carrier to the substrate. In step S40, at least one light-emitting diode chip is placed on the light-transmitting adhesive material. In step S50, the light-transmitting adhesive material is heated to form a light-transmitting adhesive layer, so that the light-emitting diode chip is fixed to the light-transmitting adhesive layer. In the following description, the above steps will be further described.

[0076] Before explaining each step in detail, please also refer to FIG. 5A to FIG. 5C , which shows Figure 1 The storage modulus (storage moduli) G' and the rheological loss factor tanδ-time t relationship diagram of the material of the light-transmitting adhesive layer 110 at different temperatures T. First of all, it should be understood that the material of the light-transmitting adhesive layer 110 has different states at different temperatures T, and the physical properties (for example, fluidity) of the material in different states can be determined by the storage modulus (storage moduli) G' and the loss modulus (loss moduli) G". The storage modulus G' can represent the elastic property (elastic property) of the material, and the loss modulus G" can represent the viscous property (vicious property) of the material. In addition, the ratio G" / G' of the loss modulus G" to the storage modulus G' is the rheological loss factor tanδ, and the rheological loss factor tanδ can represent the rheological property (or deformability) of the material.

[0077] like FIG. 5A to FIG. 5C As shown, curve L1 represents the storage modulus G' of the material of the light-transmitting adhesive layer 110 of the present disclosure; curve L2 represents the rheological loss factor tanδ of the material of the light-transmitting adhesive layer 110 of the present disclosure; and curve L3 represents the temperature T of the material of the light-transmitting adhesive layer 110 of the present disclosure. It should be understood that the values ​​of the storage modulus G' and the rheological loss factor tanδ are the results obtained by the rheometer measurement, and for the sake of clarity, FIG. 5A to FIG. 5C The curve of the loss modulus G" of the light-transmitting adhesive layer 110 is omitted. Specifically, when the temperature T gradually rises, the material of the light-transmitting adhesive layer 110 can be gradually changed from a light-transmitting adhesive material with greater viscosity to a light-transmitting adhesive material with both viscosity and elasticity (i.e., a semi-solid colloid form), and then gradually changed from a light-transmitting adhesive material in a semi-solid colloid form to a light-transmitting adhesive layer 110 with greater elasticity. FIG. 5A to FIG. 5CIn the figure, when the temperature T is between about 50°C and 150°C, the rheological loss factor tanδ of the material of the light-transmitting adhesive layer 110 gradually increases with the increase of temperature (i.e., the curve L2 gradually rises). At this time, the material of the light-transmitting adhesive layer 110 is in a fluid state with high viscosity. When the material of the light-transmitting adhesive layer 110 is heated to about 150°C, the maximum rheological loss factor (tanδ) of the material of the light-transmitting adhesive layer 110 is max The value of is between 0.5 and 2.5 (for example, Figure 5A Maximum rheological loss factor (tanδ) max The value of is 2.5. Figure 5B Maximum rheological loss factor (tanδ) max The value of is 1.6, and Figure 5C Maximum rheological loss factor (tanδ) max The value of tanδ is 0.8), at this time, the material of the light-transmissive adhesive layer 110 is in a colloid state with both viscosity and elasticity. It is worth noting that when the maximum rheological loss factor (tanδ) max When the value is between 0.5 and 2.5, the material of the light-transmitting adhesive layer 110 has appropriate fluidity and can effectively fix the light-emitting diode chip 130. When the material of the light-transmitting adhesive layer 110 is continuously heated at about 150° C. for a period of time or is heated to a temperature greater than about 150° C., the material of the light-transmitting adhesive layer 110 is in a solid state with relatively high elasticity.

[0078] By virtue of the above-mentioned physical properties of the material of the light-transmitting adhesive layer 110, the LED chip 130 can be effectively fixed to the substrate 120, so that the LED chip 130 is not likely to be significantly displaced during the installation process, and the light-transmitting adhesive layer 110 is not likely to have significant glue creep (i.e., the height of the glue creep is less than 20% of the height of the LED chip 130 or there is no glue creep). Figure 5A Detailed description.

[0079] Figure 6 A schematic diagram of step S10 of a method for manufacturing a light-emitting packaging structure 100 according to an embodiment of the present disclosure is shown. In step S10, a light-transmitting adhesive material 180 is formed on a carrier 190. Since the light-transmitting adhesive material 180 is in a fluid form with relatively high viscosity, the light-transmitting adhesive material 180 can be formed on a surface 191 of the carrier 190 by coating (for example, spin coating or slit coating, etc.). In some embodiments, the carrier 190 can be made of a material comprising polyethylene terephthalate (PET). In some embodiments, the filling particles 150 or the wavelength conversion substance 170 can be selectively doped into the light-transmitting adhesive material 180 before coating (for clarity, in Figure 6 Only the filling particles 150 are shown in FIG.

[0080] Figure 7 A schematic diagram of step S20 of a method for manufacturing a light-emitting package structure 100 according to an embodiment of the present disclosure is shown. In step S20, pre-baking is performed to heat the light-transmitting adhesive material 180, so that the light-transmitting adhesive material 180 gradually changes from a fluid state with high viscosity to a colloid state with both viscosity and elasticity, thereby forming a film-like light-transmitting adhesive material 180. Since the film-like light-transmitting adhesive material 180 has low fluidity, it will not flow freely on the carrier 190. In some embodiments, the maximum temperature range for heating the light-transmitting adhesive material 180 is about 110°C to 150°C. Please also refer to Figure 5A When the temperature T is between about 110°C and 150°C, the maximum rheological loss factor (tanδ) of the light-transmitting adhesive material 180 is max The value of is between about 0.5 and about 2.5, which shows that the light-transmissive adhesive material 180 has appropriate fluidity to perform subsequent steps.

[0081] Figure 8 A schematic diagram of step S30 of a method for manufacturing a light-emitting package structure 100 according to an embodiment of the present disclosure is shown. In step S30, a carrier 190 and a light-transmitting adhesive material 180 on the carrier 190 are inverted on a substrate 120, so that the light-transmitting adhesive material 180 is located between the carrier 190 and the substrate 120, that is, the carrier 190 and the substrate 120 are respectively located on two opposite surfaces of the light-transmitting adhesive material 180. Since the light-transmitting adhesive material 180 has appropriate fluidity, the light-transmitting adhesive material 180 will not overflow due to inversion. Subsequently, the substrate 120, the carrier 190 and the light-transmitting adhesive material 180 are heated and pressurized. Due to the different adhesive forces between the light-transmitting adhesive material 180 and the substrate 120 and the carrier 190, the light-transmitting adhesive material 180 is adhered to the substrate 120. In detail, since the carrier 190 is made of a material including polyethylene terephthalate, and the adhesion of the light-transmitting adhesive material 180 to polyethylene terephthalate is weaker than the adhesion of the light-transmitting adhesive material 180 to the substrate 120, the light-transmitting adhesive material 180 is easy to separate from the carrier 190 and adhere to the substrate 120 instead. In this step, heating is performed to maintain the appropriate fluidity of the light-transmitting adhesive material 180 (i.e., to maintain it in a colloid state), and pressurization is performed to make it easier for the light-transmitting adhesive material 180 to adhere to the substrate 120. In some embodiments, the heating of the substrate 120, the carrier 190, and the light-transmitting adhesive material 180 is performed at a temperature of about 150°C. Please also refer to Figure 5A , when the temperature T is about 150°C, the maximum rheological loss factor (tanδ) of the light-transmissive adhesive material 180 ismax The value of is approximately between 0.5 and 2.5, which indicates that the light-transmissive adhesive material 180 can indeed maintain its appropriate fluidity.

[0082] When the maximum rheological loss factor (tanδ) of the light-transmissive adhesive material 180 max When the value of is between 0.5 and 2.5, the light-transmitting adhesive material 180 has appropriate fluidity, that is, the light-transmitting adhesive material 180 has appropriate deformability. In this way, the light-emitting diode chip 130 can be effectively fixed to the substrate 120, thereby improving the yield of the light-emitting package structure 100. In detail, when the maximum rheological loss factor (tanδ) of the light-transmitting adhesive material 180 is max When the value is greater than 2.5, the fluidity of the light-transmitting adhesive material 180 is too large, so that the LED chip 130 is easily displaced, and the light-transmitting adhesive material 180 is prone to serious adhesive creeping, resulting in electrical problems of the LED chip 130; when the maximum rheological loss factor (tanδ) of the light-transmitting adhesive material 180 is max When the value of is less than 0.5, the deformability of the light-transmissive adhesive material 180 is too small to effectively fix the LED chip 130 to the substrate 120 through the light-transmissive adhesive material 180 .

[0083] Fig. 9 A schematic diagram of step S30 of a method for manufacturing a light-emitting package structure 100 according to an embodiment of the present disclosure is shown. Step S30 is continued, and after heating and pressurizing the substrate 120, the carrier 190, and the light-transmitting adhesive material 180, the carrier 190 is removed, so that the light-transmitting adhesive material 180 is separated from the carrier 190 and transferred to the substrate 120. The thickness H3 of the light-transmitting adhesive material 180 transferred to the substrate 120 is approximately between 5 μm and 50 μm. The light-transmitting adhesive material 180 within this thickness range can make the subsequent arrangement of the light-emitting diode chip 130 more stable. In detail, when the thickness H3 of the light-transmitting adhesive material 180 is less than 5 μm, the LED chip 130 can easily pass through the light-transmitting adhesive material 180 and touch the substrate 120 during installation; when the thickness H3 of the light-transmitting adhesive material 180 is greater than 50 μm, the thickness of the light-transmitting adhesive material 180 is too large so that the LED chip 130 can easily fall off.

[0084] Fig.10A schematic diagram of step S40 of a method for manufacturing a light-emitting package structure 100 according to an embodiment of the present disclosure is shown. In step S40, at least one light-emitting diode chip 130 is disposed on a light-transmitting adhesive material 180. In some embodiments, a red light-emitting diode chip 130R, a green light-emitting diode chip 130G, and a blue light-emitting diode chip 130B may be disposed adjacent to each other. In other embodiments, light-emitting diode chips 130 of the same color may be disposed adjacent to each other. Since the light-transmitting adhesive material 180 has appropriate fluidity, the light-transmitting adhesive material 180 will not produce obvious glue creep due to the arrangement of the light-emitting diode chip 130, and the light-emitting diode chip 130 is not likely to produce obvious displacement during the arrangement process. In some embodiments, the light-emitting diode chip 130 will cause the light-transmitting adhesive material 180 to be slightly depressed, so that the thickness H4 of the light-transmitting adhesive material 180 in the depressed portion is less than the thickness H5 of the light-transmitting adhesive material 180 in the surrounding non-depressed portion. In other embodiments, the arrangement of the LED chip 130 does not cause a slight depression in the light-transmitting adhesive material 180, so that the thickness of the light-transmitting adhesive material 180 is uniform. In other embodiments, the arrangement of the LED chip 130 causes a slight creep of the light-transmitting adhesive material 180, but since the light-transmitting adhesive material 180 has appropriate fluidity, the creep height of the light-transmitting adhesive material 180 is less than 20% of the height of the LED chip 130.

[0085] Fig.11 A schematic diagram of step S50 of a method for manufacturing a light-emitting packaging structure 100 according to an embodiment of the present disclosure is shown. In step S50, post-baking is performed to heat the light-transmitting adhesive material 180, so that the light-transmitting adhesive material 180 is transformed from a colloidal state to a solid state, thereby forming a light-transmitting adhesive layer 110. In this way, the light-emitting diode chip 130 can be fixed to the light-transmitting adhesive layer 110. In detail, the light-transmitting adhesive material 180 in a colloidal state gradually transforms into a solid state of the light-transmitting adhesive layer 110 as it is heated. Through the above-mentioned state transition, the light-transmitting diode chip 130 can be firmly fixed to the light-transmitting adhesive layer 110. In some embodiments, heating the light-transmitting adhesive material 180 is performed at a temperature of approximately 80°C to 160°C. Please also refer to Figure 5A Specifically, when the temperature T is between about 80°C and 150°C, the maximum rheological loss factor tanδ of the light-transmissive adhesive material 180 is maxThe value of is approximately between 0.5 and approximately between 2.5, at which time the material is still in a colloidal state. However, if the material is heated at a temperature T within this range and the heating time is prolonged, a solid-state light-transmitting adhesive layer 110 can still be obtained in the end. When the temperature T is continuously maintained at approximately 150°C (or when the temperature T is approximately between 150°C and 160°C), the rheological loss factor tanδ of the light-transmitting adhesive material 180 will decrease in a short period of time, that is, the light-transmitting adhesive material 180 in a colloidal state can be converted into a solid-state light-transmitting adhesive layer 110 under short-term heating.

[0086] See also Fig.10 and Fig.11 It should be understood that in step S40, if the light-transmitting adhesive material 180 is slightly depressed when the light-emitting diode chip 130 is disposed, the light-transmitting adhesive layer 110 in step S50 has a first portion 112 and a second portion 114 on the second surface 113, the thickness H2 of the second portion 114 is less than the thickness H1 of the first portion 112, and the first portion 112 surrounds part of the light-emitting diode chip 130; and if the light-transmitting adhesive material 180 is not slightly depressed when the light-emitting diode chip 130 is disposed, the light-transmitting adhesive layer 110 in step S50 has a uniform thickness.

[0087] According to the above-mentioned embodiment of the present disclosure, during the manufacturing process of the light-emitting package structure, the light-transmitting adhesive material is first heated to form a semi-solid colloid state, and since the maximum rheological loss factor (tan δ) of the light-transmitting adhesive material max The value of is between 0.5 and 2.5, so the light-transmitting adhesive material 180 can have appropriate fluidity. In this way, the light-transmitting adhesive material 180 will not produce obvious glue creeping due to the setting of the light-emitting diode chip, and the light-emitting diode chip is not easy to produce obvious displacement during the setting process, thereby effectively fixing the light-emitting diode chip to the substrate through the light-transmitting adhesive layer formed subsequently, so as to improve the yield of the light-emitting packaging structure. In addition, the light-transmitting adhesive layer of the light-emitting packaging structure formed by the above-mentioned manufacturing method can have a first part and a second part surrounded by the first part, wherein the light-emitting diode chip is set on the second part, and the thickness of the second part is less than or equal to the thickness of the first part.

[0088] Although the present disclosure has been disclosed in the above embodiments, it is not intended to limit the present disclosure. Anyone familiar with this technology can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be based on the scope defined by the attached claims.

Claims

1. A light-emitting packaging structure, characterized in that: Include: A light-transmissive adhesive layer having a first surface and a second surface opposite to each other; A substrate, located on the first surface of the light-transmissive adhesive layer; At least one light-emitting diode chip is located on the second surface of the light-transmissive adhesive layer, wherein the light-emitting diode chip emits blue light, the light-transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, the vertical projection area of ​​the second portion on the substrate at least completely covers the vertical projection area of ​​the light-emitting diode chip on the substrate, the thickness of the second portion is less than or equal to the thickness of the first portion, an inclined surface is provided between the second surface of the first portion and the second surface of the second portion, and the inclined surface gradually extends from the second surface of the second portion away from the light-emitting diode chip to the second surface of the first portion; and A wavelength conversion material is located in the light-transmissive adhesive layer, wherein the wavelength conversion material absorbs a portion of the blue light and converts it into a color light of a corresponding wavelength.

2. The light-emitting package structure according to claim 1, characterized in that: The height of the light-transmissive adhesive layer in the first portion is less than 20% of the height of the light-emitting diode chip.

3. The light-emitting package structure according to claim 1, characterized in that: The number of the light emitting diode chips is multiple.

4. The light-emitting package structure according to claim 3, characterized in that: Each of the LED chips includes a red LED chip, a green LED chip or a blue LED chip.

5. The light-emitting package structure according to claim 1, characterized in that: It also comprises a plurality of filling particles located in the light-transmissive adhesive layer, wherein the plurality of filling particles are used to adjust the path of the light emitted by the light-emitting diode chip.

6. The light-emitting package structure according to claim 1, characterized in that: The substrate is a light-transmissive substrate.

7. The light-emitting package structure according to claim 1, characterized in that: The device also comprises a packaging layer, which is located on the second surface of the light-transmissive adhesive layer and covers the light-emitting diode chip.

8. A method for manufacturing a light-emitting packaging structure, characterized in that: Include: forming a light-transmissive adhesive material on a carrier; The light-permeable adhesive material is heated, wherein a maximum rheological loss factor (tan δ) of the light-permeable adhesive material is max The value of is between 0.5 and 2.5; Transferring the light-transmissive adhesive material from the carrier to a substrate; Disposing at least one light emitting diode chip on the light-transmissive adhesive material; and The light-permeable adhesive material is heated to form a light-permeable adhesive layer, so that the light-emitting diode chip is fixed on the light-permeable adhesive layer.

9. The method for manufacturing a light-emitting package structure according to claim 8, characterized in that: The maximum temperature range of heating the light-transmissive adhesive material is between 110°C and 150°C.

10. The method for manufacturing a light-emitting package structure according to claim 8, characterized in that: The step of heating the light-transmissive adhesive material to form the light-transmissive adhesive layer is performed at a temperature between 80° C. and 160° C.

11. The method for manufacturing a light-emitting package structure according to claim 8, characterized in that: Transferring the light-transmissive adhesive material from the carrier to the substrate comprises: Disposing the light-transmissive adhesive material on the substrate so that the substrate and the carrier are respectively located on two opposite surfaces of the light-transmissive adhesive material; heating and pressurizing the carrier, the light-transmissive adhesive material, and the substrate; and The light-permeable adhesive material is separated from the carrier and adhered to the substrate by utilizing the different adhesive forces of the light-permeable adhesive material on the substrate and the carrier.

12. The method for manufacturing a light-emitting package structure according to claim 8, characterized in that: The light-transmissive adhesive layer has a first portion and a second portion, the first portion surrounds the second portion, a vertical projection area of ​​the second portion on the substrate at least completely covers a vertical projection area of ​​the light-emitting diode chip on the substrate, and the thickness of the second portion is less than or equal to the thickness of the first portion.

13. The method for manufacturing a light-emitting package structure according to claim 8, characterized in that: After forming the light-transmissive adhesive material on the carrier, the method further includes doping a plurality of filling particles or a wavelength conversion material into the light-transmissive adhesive material.

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