Double-sided plasma enhanced chemical vapor deposition structure and deposition device

A plasma and enhanced chemical technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of low deposition efficiency and complicated operation, and achieve high efficiency, strong applicability and excellent deposition effect. Effect

CN112831772AActive Publication Date: 2021-05-25黄剑鸣
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2021-05-25

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Abstract

The invention discloses a double-sided plasma enhanced chemical vapor deposition structure. The structure comprises a box body as well as a gas box mechanism, an electrode mechanism and a carrier which are arranged in a cavity of the box body; the gas box mechanism is used for introducing gas, the electrode mechanism is connected with the gas box mechanism and is used for ionizing the gas in the gas box mechanism, the carrier is located on the side, away from a gas inlet of the gas box mechanism, of the box body, a groove body structure with an upward opening is formed in the carrier, the groove body structure is arranged in a front-back penetrating mode in the front-back direction of the box body, the groove body structure is provided with a first bearing surface and a second bearing surface which are used for bearing workpieces, the carrier is arranged on the box body in a swinging mode and drives the workpieces to be switched between the first bearing surface and the second bearing surface, and the box body is provided with an extraction opening connected with the output end of a deposition chamber. Therefore, the double-sided plasma enhanced chemical vapor deposition structure has the advantages of excellent deposition effect and high efficiency. The invention further provides a deposition device.
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Description

technical field

[0001] The invention relates to a double-sided plasma-enhanced chemical vapor deposition structure, in particular to a double-sided plasma-enhanced chemical vapor deposition structure capable of simultaneously ionizing multiple different gases. Background technique

[0002] With the rapid development of economic construction, microelectronics technology has developed rapidly, and the development and use of plasma enhanced chemical vapor deposition (English full name: Plasma Enhanced Chemical Vapor Deposition; abbreviation: PECVD) equipment is also becoming more and more extensive. PECVD equipment is a device that uses high-frequency power source glow discharge to generate plasma chemical deposition. Due to the existence of plasma, the deposition temperature is reduced. At present, PECVD equipment is widely used in liquid crystal display industry, solar cell industry, semiconductor device and large-scale integrated circuit manufacturing industry, etc. [0003...

Examples

Embodiment Construction

[0024] In order to describe the technical content and structural features of the present invention in detail, further description will be given below in conjunction with the implementation and accompanying drawings.

[0025] see Figure 1 to Figure 5 , the deposition device of the present invention includes a gas collection chamber (not shown) and a double-sided plasma-enhanced chemical vapor deposition structure 100, the double-sided plasma-enhanced chemical vapor deposition structure 100 is symmetrically arranged, and all double-sided plasma-enhanced chemical vapor deposition The pumping ports 11 of the structure 100 are all connected to the gas collection chamber, so that one gas collection chamber can collect the gas discharged from multiple double-sided plasma-enhanced chemical vapor deposition structures 100, which saves space and is more convenient for recycling. Among them, The double-sided plasma-enhanced chemical vapor deposition structure 100 includes a box body 1 a...