Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method capable of inhibiting adhesion of particles to a wafer. The substrate processing apparatus includes a holding section that holds a substrate horizontally, a substrate rotating section that rotates the substrate together with the holding section around a vertical axis, a nozzle that supplies a fluid to an upper surface of the substrate held by the holding section, a supply section that supplies the fluid to the nozzle, and a moving section that moves the nozzle in a radial direction of the substrate. The nozzle includes a first nozzle section that discharges the fluid, and a second nozzle section that discharges the fluid in a direction different from the first nozzle section. An exit line of the first nozzle section and an exit line of the second nozzle section cross at a crossing point. The supply section includes a first flow rate controller that adjusts a discharge amount of the first nozzle section, and a second flow rate controller that adjusts a discharge amount of the second nozzle section in a manner independent of the discharge amount of the first nozzle section.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and a substrate processing method. BACKGROUND

[0002] The substrate processing apparatus described in Patent Literature 1 forms a liquid film of IPA (isopropyl alcohol) on the upper surface of a rotating substrate, and then moves the supply position of IPA from the center to the periphery of the substrate. As a result, an opening is formed in the center of the liquid film, and then the opening edge expands from the center to the periphery of the substrate W, and the substrate W is dried. In addition, the substrate processing apparatus blows N2 gas against the opening of the liquid film of IPA, and pushes the opening edge with the N2 gas. As the opening edge expands from the center to the periphery of the substrate, the supply position of the N2 gas is moved from the center to the periphery of the substrate.

[0003] The substrate processing apparatus described in Patent Literature 2 includes a nozzle that releases a processing liquid to the upper surface of a substrate, a nozzle scanning mechanism that scans the nozzle along the upper surface of the substrate, and a release angle changing mechanism that changes the release angle of the nozzle. The release angle changing mechanism changes the joint angle of a multi-joint arm that supports the nozzle, to change the release angle of the nozzle.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2019-16654

[0007] Patent Literature 2: Japanese Patent Application Publication No. 2012-204720 SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] One embodiment of the present application provides a technique capable of suppressing the adhesion of particles to a wafer.

[0010] TECHNICAL SOLUTION FOR SOLVING THE PROBLEMS

[0011] A substrate processing apparatus according to one embodiment of the present invention includes: a holding portion for holding a substrate horizontally; a substrate rotating portion for rotating the substrate together with the holding portion about a vertical axis; a nozzle for supplying fluid to an upper surface of the substrate held by the holding portion; a supply portion for supplying the fluid to the nozzle; and a moving portion for moving the nozzle radially in relation to the substrate. The nozzle includes: a first nozzle portion for releasing the fluid; and a second nozzle portion for releasing the fluid in a direction different from the first nozzle portion. The emission rays of the first nozzle portion and the emission rays of the second nozzle portion intersect at an intersection point. The supply portion includes: a first flow controller for adjusting the release amount of the first nozzle portion; and a second flow controller for adjusting the release amount of the second nozzle portion independently of the release amount of the first nozzle portion.

[0012] Invention Effects

[0013] According to one embodiment of the present invention, it is possible to suppress the adhesion of particles to the substrate. Attached Figure Description

[0014] Figure 1 This is a cross-sectional view showing a substrate processing apparatus according to one embodiment. Figure 4 A cross-sectional view of the S4 state.

[0015] Figure 2 This is a cross-sectional view showing a substrate processing apparatus according to one embodiment. Figure 4 A cross-sectional view of the S5 state.

[0016] Figure 3 This is a top view showing an example of a moving part that moves the nozzle.

[0017] Figure 4 This is a flowchart illustrating a substrate processing method according to one embodiment.

[0018] Figure 5 It means Figure 1 A horizontal cross-sectional view of an example of a desiccant nozzle.

[0019] Figure 6 It is along Figure 5 Vertical cross-sectional view of the desiccant nozzle of the VI-VI line.

[0020] Figure 7 This is a 3D diagram illustrating an example of the positional relationship between the intersection point, the bottom point, the collision point, and the center point.

[0021] Figure 8 This is a top view showing an example of the positional relationship between the intersection point, the bottom point, the collision point, and the center point.

[0022] Figure 9 It means fromFigure 8 An example of a liquid film observed in the direction of arrow IX.

[0023] Figure 10 It means Figure 9 A diagram showing an example of a liquid film when the first collision angle θ1 is 90°.

[0024] Figure 11 It means from Figure 8 A diagram showing an example of a liquid film observed in the direction of arrow XI.

[0025] Figure 12 It means Figure 11 A diagram showing an example of a liquid film when the third collision angle θ3 is 90°.

[0026] Explanation of reference numerals in the attached figures

[0027] 1. Substrate processing device

[0028] 2. Holding section

[0029] 3. Substrate Rotation Section

[0030] 5 nozzles

[0031] 51 First Nozzle Section

[0032] 52 Second Nozzle Section

[0033] 6. Supply Department

[0034] 62 First Flow Controller

[0035] 64 Second flow controller. Detailed Implementation

[0036] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the same or corresponding structures are labeled with the same reference numerals in the various drawings, and sometimes descriptions are omitted. In this specification, the X-axis, Y-axis, and Z-axis are directions perpendicular to each other. The X-axis and Y-axis are horizontal directions, and the Z-axis is a vertical direction.

[0037] like Figure 1 and Figure 2 As shown, the substrate processing apparatus 1 includes a holding part 2, a substrate rotating part 3, a nozzle 5, and a supply part 6 (see reference). Figure 5The substrate consists of a moving part 7, a cup-shaped body 8, and a control part 9. The holding part 2 holds the substrate W horizontally. The holding part 2 can be a mechanical chuck, a vacuum suction chuck, or an electrostatic chuck, etc. The substrate rotating part 3 rotates the substrate W together with the holding part 2 about a vertical axis of rotation. The nozzle 5 supplies fluid to the upper surface of the substrate W held by the holding part 2. The fluid can be either a liquid or a gas, or a mixture of both. The supply part 6 supplies fluid to the nozzle 5. The moving part 7, located above the substrate W held by the holding part 2, moves the nozzle 5 radially above the substrate W. The cup-shaped body 8 internally houses the holding part 2 and recovers the fluid supplied to the substrate W.

[0038] The nozzle 5 supplies fluid to the upper surface of the substrate W held by the holding part 2. There may be more than one nozzle 5. For example, a pharmaceutical nozzle 5A, a rinsing fluid nozzle 5B, a drying fluid nozzle 5C, and a drying gas nozzle 5D can be used as the nozzle 5.

[0039] The chemical nozzle 5A supplies a chemical solution to the upper surface of the substrate W. The chemical solution, for example, is supplied to the center of the rotating substrate W, and due to centrifugal force, it spreads wettably from the center of the substrate W towards its periphery, forming a liquid film. There are no particular limitations on the chemical solution; for example, DHF (dilute hydrofluoric acid) can be used.

[0040] Furthermore, the cleaning solution can be any commonly used cleaning solution for semiconductor substrates, and is not limited to DHF. For example, the solution can be SC-1 (an aqueous solution containing ammonium hydroxide and hydrogen peroxide) or SC-2 (an aqueous solution containing hydrogen chloride and hydrogen peroxide). Multiple solutions can also be used.

[0041] Rinse fluid nozzle 5B supplies rinsing fluid to the upper surface of substrate W. The rinsing fluid, for example, is supplied to the center of the rotating substrate W, and due to centrifugal force, it extends wettably from the center of substrate W towards the periphery, displacing the reagent contained in the liquid film with rinsing fluid. As a result, a liquid film of rinsing fluid is formed. There are no particular limitations on the reagent; for example, pure water such as DIW (deionized water) can be used.

[0042] The drying solution nozzle 5C supplies drying solution L to the upper surface of the substrate W. The drying solution L is supplied, for example, to the center of the rotating substrate W, and due to centrifugal force, it extends wettably from the center of the substrate W towards its periphery, replacing the rinsing liquid contained in the liquid film with the drying solution. As a result, a liquid film F of drying solution L is formed. There are no particular limitations on the drying solution L; for example, an organic solvent such as IPA (isopropanol) can be used.

[0043] After the drying liquid L covers the entire upper surface of the substrate W, it gradually exposes the substrate W from the center outwards. Specifically, after the liquid film F of the drying liquid L is formed, the point of impact of the drying liquid L is moved from the center of the substrate W outwards. As a result, an opening O is formed at the center of the liquid film F, and then the edge of the opening extends from the center of the substrate W outwards, thus drying the substrate W.

[0044] Furthermore, the drying solution L is not limited to IPA. The drying solution L can be any liquid capable of suppressing the collapse of the (not shown) uneven pattern formed on the upper surface of the substrate W and having a lower surface tension than the rinsing solution. Examples of drying solutions L include HFE (hydrofluoroether), methanol, ethanol, acetone, or trans-1,2-dichloroethylene. However, when replacement from the rinsing solution to the drying solution is not required, the rinsing solution is used as the drying solution.

[0045] Drying gas nozzle 5D supplies drying gas G to the upper surface of substrate W. Drying gas G is supplied, for example, to the opening O of liquid film F, pushing against its opening edge from the inside. The point of impact of drying gas G moves from the center to the periphery of substrate W as the opening edge widens. Inactive gases such as N2 can be used as drying gas G.

[0046] The moving part 7 moves the nozzle 5 radially above the substrate W held by the holding part 2. This allows the point of impact of the fluid on the upper surface of the substrate W to move radially above the substrate W. The moving part 7 can also move the nozzle 5 vertically. The height of the nozzle 5 from the substrate W can be adjusted. The moving part 7 can move multiple nozzles 5 together or multiple nozzles 5 independently.

[0047] like Figure 3 As shown, the moving part 7 includes, for example, a rotating arm 71 that holds the nozzle 5 and a rotating mechanism 72 that rotates the rotating arm 71. The rotating mechanism 72 can also function as a mechanism for raising and lowering the rotating arm 71. The rotating arm 71 is horizontally positioned, holding the nozzle 5 at its front end. The rotating mechanism 72 rotates the rotating arm 71 about a rotation axis extending downward from the root end of the rotating arm 71. The rotating arm 71... Figure 3 The position indicated by the solid line in the middle and Figure 3 Rotate between the positions indicated by the double-dotted lines.

[0048] Furthermore, the moving part 7 can be replaced by a guide rail and a linear motion mechanism instead of the rotating arm 71 and the rotating mechanism 72. The guide rail is horizontally arranged, and the linear motion mechanism moves the nozzle 5 along the guide rail.

[0049] Control unit 9 is, for example, a computer, such as Figure 1As shown, a storage medium 92 includes a CPU (Central Processing Unit) 91 and memory, etc. The storage medium 92 stores programs that control various processes executed in the substrate processing apparatus 1. The control unit 9 causes the CPU 91 to execute the programs stored in the storage medium 92, thereby controlling the operation of the substrate processing apparatus 1.

[0050] Below, refer to Figure 4 The substrate processing method is explained. The substrate processing method has... Figure 4 S1 to S6. Figure 4 S1 to S6 are implemented under the control of the control unit 9.

[0051] First of all, Figure 4 In step S1, a conveying device (not shown) feeds the substrate W into the substrate processing apparatus 1. After transferring the substrate W to the holding unit 2, the conveying device exits the substrate processing apparatus 1. The holding unit 2 holds the substrate W horizontally. The substrate W includes a semiconductor substrate such as a silicon wafer and a film formed on the semiconductor substrate. The film may have a raised or recessed pattern. The holding unit 2 holds the substrate W horizontally with the raised or recessed pattern facing upwards. Alternatively, a glass substrate may be used instead of a semiconductor substrate.

[0052] Next, in Figure 4 In step S2, the liquid nozzle 5A supplies liquid to the upper surface of the substrate W, forming a liquid film. The liquid is supplied, for example, to the center of the rotating substrate W, and due to centrifugal force, it spreads wettably from the center of the substrate W towards its periphery. The rotational speed of the substrate W and the supply flow rate of the liquid are set so that the entire surface of the substrate W, including its uneven patterns, is covered by the liquid film.

[0053] Next, in Figure 4 In step S3, the rinsing fluid nozzle 5B supplies rinsing fluid to the upper surface of the substrate W, forming a liquid film of rinsing fluid. The rinsing fluid, for example, is supplied to the center of the rotating substrate W, and due to centrifugal force, it extends wettably from the center of the substrate W towards its periphery, replacing the medicinal solution contained in the liquid film with rinsing fluid. The rotational speed of the substrate W and the supply flow rate of the rinsing fluid are set so that the entire uneven pattern of the substrate W is covered by the liquid film.

[0054] Next, in Figure 4 In S4, such as Figure 1 As shown, the drying liquid nozzle 5C supplies drying liquid L to the upper surface of the substrate W, forming a liquid film F of drying liquid L. The drying liquid L is supplied, for example, to the center of the rotating substrate W, and due to centrifugal force, it extends wettably from the center of the substrate W towards its periphery, replacing the rinsing liquid contained in the liquid film F with drying liquid. The rotational speed of the substrate W and the supply flow rate of the drying liquid L are set so that the entire uneven pattern of the substrate W is covered by the liquid film.

[0055] Next, inFigure 4 In S5, such as Figure 2 As shown, the moving part 7 moves the drying liquid nozzle 5C from the radially inner side to the radially outer side of the substrate W, forming an opening O at the center of the liquid film F. Then, the edge of this opening expands from the center of the substrate W towards the periphery, drying the substrate W. Furthermore, as the opening edge of the liquid film F expands, the moving part 7 moves the impact point of the drying gas G from the center of the substrate W towards the periphery. The impact point of the drying gas G is set at the opening O of the liquid film F, following its opening edge to push against the opening edge from the inside.

[0056] Finally, Figure 4 In step S6, after the holding part 2 releases the substrate W, the conveying device (not shown) receives the substrate W from the holding part 2 and sends the received substrate W out of the substrate processing device 1.

[0057] Next, refer to Figure 5 and Figure 6 The drying liquid nozzle 5C will be described below. Furthermore, the drying gas nozzle 5D is constructed in the same manner as the drying liquid nozzle 5C. Moreover, the medicine nozzle 5A and the rinsing liquid nozzle 5B are also constructed in the same manner as the drying liquid nozzle 5C. The structure of the drying liquid nozzle 5C will be described representatively below.

[0058] like Figure 6 As shown, the drying liquid nozzle 5C includes: a first nozzle portion 51 that releases drying liquid L; and a second nozzle portion 52 that releases drying liquid L in a direction different from that of the first nozzle portion 51. The exit rays A1 of the first nozzle portion 51 and A2 of the second nozzle portion 52 intersect at intersection point B. Exit rays A1 and A2 are extensions of the flow path of the drying liquid L. The liquid flow of drying liquid L released from the first nozzle portion 51 and the liquid flow of drying liquid L released from the second nozzle portion 52 merge at intersection point B, generating a new liquid flow.

[0059] like Figure 5 As shown, the supply unit 6 has a first on / off valve 61 and a first flow controller 62 midway through the first pipeline supplying the drying liquid L to the first nozzle unit 51. When the first on / off valve 61 opens the flow path of the drying liquid L, the first nozzle unit 51 releases the drying liquid L. The amount released is controlled by the first flow controller 62. On the other hand, when the first on / off valve 61 closes the flow path of the drying liquid L, the first nozzle unit 51 stops releasing the drying liquid L. Furthermore, the first flow controller 62 can also function as the first on / off valve 61.

[0060] Furthermore, the supply unit 6 has a second on / off valve 63 and a second flow controller 64 midway along the second pipeline supplying the drying liquid L to the second nozzle unit 52. When the second on / off valve 63 opens the flow path of the drying liquid L, the second nozzle unit 52 releases the drying liquid L. The amount released is controlled by the second flow controller 64. On the other hand, when the second on / off valve 63 closes the flow path of the drying liquid L, the second nozzle unit 52 stops releasing the drying liquid L. In addition, the second flow controller 64 can also function as the second on / off valve 63.

[0061] The second flow controller 64 controls the release amount of the second nozzle section 52 independently of the release amount of the first nozzle section 51. Because the release amounts of the first nozzle section 51 and the second nozzle section 52 can be controlled independently, thus... Figure 6 As shown, the collision angle θ of the drying liquid L on the upper surface of the substrate W can be appropriately changed. The collision angle θ is set to suppress the splashing of the drying liquid L. This suppresses the generation of particles caused by splashing.

[0062] According to this embodiment, as described above, the release amount of the first nozzle portion 51 and the release amount of the second nozzle portion 52 are independently controlled, thereby controlling the collision angle θ of the drying liquid L on the upper surface of the substrate W. Therefore, compared to the case where the joint angle of the multi-joint arm is changed as in Patent Document 2, the generation of particles caused by friction can be suppressed.

[0063] In this embodiment, there are multiple second nozzle sections 52, but there can also be only one. When multiple second nozzle sections 52 are provided, multiple second pipelines are also provided, and a second flow controller 64 is provided at the midpoint of each of the multiple second pipelines. The release amount of the multiple second nozzle sections 52 can be controlled independently.

[0064] like Figure 6 As shown, the emission rays A2 of the plurality of second nozzle sections 52 intersect with the emission ray A1 of the first nozzle section 51 at the same intersection point B. Unlike the case where each of the second nozzle sections 52 has an intersection point B, the liquid flow of the second nozzle section 52 can always merge with the liquid flow of the first nozzle section 51, regardless of the release amount of the second nozzle section 52.

[0065] The second nozzle section 52 is arranged with four or more nozzles at equal intervals around the exit ray A1 of the first nozzle section 51. Figure 5 (There are 4 in total). The 4 second nozzle sections 52 are arranged at 90° intervals. When there are 4 or more second nozzle sections 52, the collision point of the drying liquid L can be moved in 4 directions orthogonal to the exit ray A1 of the first nozzle section 51. In addition, the number of second nozzle sections 52 is not limited to 4, for example, it can be 8.

[0066] The drying liquid nozzle 5C may also include a rotating part 55 that rotates the second nozzle part 52 around the exit ray A1 of the first nozzle part 51. The horizontal component of the exit ray A2 of the second nozzle part 52 can be rotated around the intersection point B, and the direction of its horizontal component can be adjusted.

[0067] The rotating part 55 can cause the plurality of second nozzle parts 52 to rotate in the same direction and at the same speed. It can maintain the plurality of second nozzle parts 52 at equal intervals. In addition, the rotating part 55 can also cause the plurality of second nozzle parts 52 to rotate individually.

[0068] The rotation of the second nozzle section 52 by the rotating section 55, for example, by the rotating section 55 Figure 3 The rotating arm 71 shown rotates the drying liquid nozzle 5C. When the rotation radius of the drying liquid nozzle 5C is small, the trajectory of the drying liquid nozzle 5C becomes an arc, so the rotating part 55 rotates the second nozzle part 52, thereby maintaining the horizontal composition of the ray A2 in the radial or circumferential direction of the substrate W.

[0069] Furthermore, when the radius of rotation of the drying liquid nozzle 5C is large and the trajectory of the drying liquid nozzle 5C can be considered a straight line, the rotating part 55 may not cause the second nozzle part 52 to rotate. This is because, in this case, even if the rotating part 55 does not cause the second nozzle part 52 to rotate, the horizontal composition of ray A2 can be maintained in the radial or circumferential direction of the substrate W.

[0070] like Figure 5 As shown, the first nozzle portion 51 is cylindrical, and four second nozzle portions 52 are equally spaced around its circumference. Each of the four second nozzle portions 52 is cylindrical. When both the first nozzle portion 51 and the second nozzle portion 52 are cylindrical, it is easy to rotate the second nozzle portion 52 with the emission ray A1 of the first nozzle portion 51 as the center.

[0071] Furthermore, the shapes of both the first nozzle portion 51 and the second nozzle portion 52 are not limited to cylindrical. For example, the first nozzle portion 51 can be square-cylindrical, with the second nozzle portion 52 fixed to each of its four sides. The four second nozzle portions 52 can also each be square-cylindrical.

[0072] In this embodiment, the first nozzle portion 51 and the second nozzle portion 52 are manufactured and assembled separately, but they can also be manufactured as a single unit. For example, multiple holes can be machined into a cylinder, and the first nozzle portion 51 and the second nozzle portion 52 can be manufactured as a single unit.

[0073] like Figure 6As shown, the first nozzle section 51 includes a release port 53 that releases the drying liquid L towards the intersection B directly below. On the other hand, the second nozzle section 52 includes a release port 54 that releases the drying liquid L towards the intersection B at an angle downwards. Since the drying liquid L is typically released directly downwards, the release amount of the first nozzle section 51 can be determined by flexibly utilizing a large amount of data already obtained.

[0074] The release amount of the first nozzle 51 is set according to the material of the substrate W, the texture pattern, and the position of the opening edge of the liquid film F. The drying liquid L is released basically directly downwards, but it is appropriately adjusted to a downward angle to suppress splashing of the drying liquid L. The release amount of the second nozzle 52 is also set according to the material of the substrate W, the texture pattern, and the position of the opening edge of the liquid film F.

[0075] The area of ​​the release port 53 of the first nozzle section 51 can be greater than or equal to the area of ​​the release port 54 of the second nozzle section 52. The release amount of the first nozzle section 51 is substantially greater than that of the second nozzle section 52. Since the liquid flow with the larger flow rate is coarser, the two liquid flows can smoothly merge at the intersection point B, thus suppressing splashing at the intersection point B. Furthermore, the shapes of the release ports 53 and 54 are circular in this embodiment, but they can also be quadrilateral, triangular, or star-shaped, etc.

[0076] The collision angle θ of the drying liquid L on the upper surface of the substrate W is mainly determined by the release amount and direction of the drying liquid L from the first nozzle section 51 and the release amount and direction of the drying liquid L from the second nozzle section 52. The collision angle θ is determined by... Figure 7 The positional relationships of intersection point B, direct lower point C, collision point D, and center point E are shown below. Intersection point B, as described above, is the intersection of the exit ray A1 of the first nozzle section 51 and the exit ray A2 of the second nozzle section 52. Direct lower point C is the point directly below intersection point B on the upper surface of the substrate W, and coincides with intersection point B when viewed from above. Collision point D is the point where the flow of drying liquid L collides with the upper surface of the substrate W. Center point E is the center point of the upper surface of the substrate W, and is the rotation center point of the substrate W. The collision angle θ includes, for example, a first collision angle θ1, a second collision angle θ2, and a third collision angle θ3.

[0077] The first collision angle θ1 is the direction of the straight line connecting the collision point D and the center point E (e.g., Figure 8 Observe in the direction of arrow IX (as shown), as... Figure 9The angle θ1 is formed by the straight line L1 connecting the intersection point B and the collision point D and the upper surface of the substrate W. The further the collision point D is offset forward (in the direction of arrow R) from the point directly below C in the direction of rotation of the substrate W, the smaller the first collision angle θ1 becomes. Conversely, the further the collision point D is offset backward (opposite to the direction of arrow R) from the point directly below C in the direction of rotation of the substrate W, the larger the first collision angle θ1 becomes. When the collision point D is located at the point directly below C, the first collision angle θ1 is 90°. The first collision angle θ1 is greater than 0° but less than 180°.

[0078] The second collision angle θ2 is as follows: Figure 8 The angle θ2 is the angle between the straight line L2 connecting the bottom point C and the collision point D, and the tangent L3 at the collision point D of the circle centered at point E. The further the collision point D is from the bottom point C, the more radially outward it is from the substrate W, and the larger the second collision angle θ2 becomes. Conversely, the further the collision point D is from the bottom point C, the more radially inward it is from the substrate W, and the smaller the second collision angle θ2 becomes. When the tangent L3 passes through the bottom point C, the second collision angle θ2 is 0°. The second collision angle θ2 is larger than -90° but smaller than 90°.

[0079] The third collision angle θ3 is from the direction of the tangent L3 (e.g., Figure 8 Observe in the direction of arrow XI (as shown), as... Figure 11 The angle θ3 is formed by the straight line L4 connecting the intersection point B and the collision point D with the upper surface of the substrate W. The further the collision point D is offset from the point directly below C in the radially outward direction (direction of arrow r) of the substrate W, the smaller the third collision angle θ3 becomes. Conversely, the further the collision point D is offset from the point directly below C in the radially inward direction (opposite direction of arrow r) of the substrate W, the larger the third collision angle θ3 becomes. When the collision point D is directly below C, the third collision angle θ3 is 90°. The third collision angle θ3 is greater than 0° but less than 180°.

[0080] The collision angle θ is determined, as described above, by the amount and direction of the drying liquid L released from the first nozzle section 51 and the amount and direction of the drying liquid L released from the second nozzle section 52. However, the collision angle θ may change when the airflow formed above the substrate W is turbulent.

[0081] Therefore, as Figure 1 As shown, the substrate processing apparatus 1 may also include a detection unit 11. The detection unit 11 detects the collision angle θ of the drying liquid L on the upper surface of the substrate W. The detection unit 11 is, for example, an infrared sensor or a camera, which receives infrared light or visible light and detects the collision angle θ of the drying liquid L. The collision angle θ to be detected is at least one of a first collision angle θ1, a second collision angle θ2, and a third collision angle θ3. The detection unit 11 sends a signal indicating the detected collision angle θ to the control unit 9.

[0082] The control unit 9 controls the first flow controller 62 and the second flow controller 64, thereby reducing the deviation between the detection value and the set value of the detection unit 11. This helps to suppress changes in the collision angle θ caused by disturbances such as airflow turbulence.

[0083] Alternatively, the control unit 9 can control the release amount of the drying liquid L from the first nozzle section 51 and the release amount of the drying liquid L from the second nozzle section 52 according to preset settings. This is because, in the absence of interference, the collision angle θ of the drying liquid L is determined by the release amount and release direction of the drying liquid L from the first nozzle section 51 and the release amount and release direction of the drying liquid L from the second nozzle section 52.

[0084] exist Figure 4 In S5, as described above, such as Figure 2 As shown, the moving part 7 moves the drying liquid nozzle 5C from the radial inner side to the radial outer side of the substrate W, forming an opening O at the center of the liquid film F. Then, the edge of the opening extends from the center of the substrate W to the periphery, thereby drying the substrate W.

[0085] When the drying liquid nozzle 5C begins to move, it is positioned directly above the center point E. At this time, the collision point D coincides with the center point E, the first collision angle θ1 and the third collision angle θ3 are 90°, and the second collision angle θ2 is 0°. The drying liquid L is supplied to the center point E from directly above it, and due to centrifugal force, it flows radially and evenly from the center point E. As a result, a liquid film F of uniform thickness can be formed.

[0086] After the drying liquid nozzle 5C begins to move, the collision point D moves away from the center point E, forming an opening O at the center of the liquid film F of the drying liquid L. The collision point D is formed on the outer side of the edge of its opening.

[0087] With a constant rotational speed of substrate W, the further the collision point D is from the center point E, the faster the tangential velocity at collision point D of substrate W becomes. The desiccant L is drawn by substrate W and rotates with it, therefore the tangential velocity at collision point D of desiccant L also increases.

[0088] Assuming that even if the collision point D leaves the center point E, the first collision angle θ1 remains 90°, as follows: Figure 10As shown, an excessively thick liquid film F forms behind the collision point D in the direction of rotation (opposite to the direction of arrow R), causing splashing. If the first collision angle θ1 remains at 90°, the drying liquid L will extend equally from the collision point D in both directions before and after the rotation. However, behind the collision point D in the direction of rotation, the drying liquid L is pulled by the rotating substrate W and pushed back to the collision point D. As a result, the thickness of the liquid film F becomes thicker behind the collision point D in the direction of rotation, making splashing more likely. This tendency becomes more pronounced the further the collision point D is from the center point E. This is because the tangential velocity at the collision point D becomes faster the further away from the center point E.

[0089] Therefore, the control unit 9 controls the movement of the drying liquid nozzle 5C from the radially inner side to the radially outer side of the substrate W, such as... Figure 9 As shown, the first collision angle θ1 is continuously or stepwise reduced. This reduces the amount of liquid flowing from the collision point D to the rear of the rotation direction, and suppresses the formation of an excessively thick liquid film F at a location further rear of the collision point D in the rotation direction. Therefore, splashing and particle control are suppressed.

[0090] Furthermore, with a constant rotational speed of substrate W, the further the collision point D is from the center point E, the greater the centrifugal force acting on the drying liquid L at collision point D. Due to this increased centrifugal force, the force exerted in the radially outward direction (in...) Figure 12 (In the direction of the middle arrow r) the drying liquid L is pushed more forcefully.

[0091] Assuming that even if the collision point D leaves the center point E, the third collision angle θ3 remains 90°, as follows: Figure 12 As shown, an excessively thick liquid film F forms radially inward from the collision point D (opposite to the direction of arrow r), causing splashing. When the third collision angle θ3 is still 90°, the dried liquid L extends equally in both radially inward and outward directions from the collision point D. However, radially inward from the collision point D, the dried liquid L is pushed back towards the collision point D due to centrifugal force. As a result, the liquid film F becomes thicker radially inward from the collision point D, making splashing more likely. This tendency becomes more pronounced the further the collision point D is from the center point E. This is because the centrifugal force at the collision point D increases the further away from the center point E.

[0092] Therefore, the control unit 9 controls the movement of the drying liquid nozzle 5C from the radially inner side to the radially outer side of the substrate W, such as... Figure 11 As shown, the third collision angle θ3 is continuously or stepwise reduced. This reduces the amount of liquid flowing from the collision point D in the radially inward direction, and suppresses the formation of an excessively thick liquid film F at a location radially inward from the collision point D. Therefore, splashing and particle suppression are possible. Furthermore, the collapse of the opening edge of the liquid film F on the inner side can be suppressed.

[0093] In addition, the control unit 9 controls the movement of the drying liquid nozzle 5C from the radially inner side to the radially outer side of the substrate W, such as... Figure 8 As shown, the second collision angle θ2 is increased continuously or stepwise. This reduces the amount of liquid flowing from the collision point D in the radially inward direction, and suppresses the formation of an excessively thick liquid film F in the radially inward direction compared to the collision point D. Therefore, splashing and particle suppression are possible. Furthermore, the collapse of the opening edge of the liquid film F on the inward side is prevented.

[0094] In addition, Figure 4 In S5, as described above, such as Figure 2 As shown, as the opening edge of the liquid film F expands, the moving part 7 moves the impact point of the drying gas G from the center of the substrate W to the periphery. The release of the drying gas G begins after the liquid film F forms the opening O. The impact point of the drying gas G is set at the opening O of the liquid film F, following the opening edge to push against its opening edge from the inside.

[0095] Alternatively, the control unit 9 can control the collision angle θ of the drying gas G in the same manner as the collision angle θ of the drying liquid L during the process of moving the drying liquid nozzle 5C from the radially inner side to the radially outer side of the substrate W. That is, the control unit 9 can control the first collision angle θ1 of the drying gas G to decrease continuously or stepwise. Furthermore, the control unit 9 can control the second collision angle θ2 of the drying gas G to increase continuously or stepwise. Additionally, the control unit 9 can control the third collision angle θ3 of the drying gas G to decrease continuously or stepwise. Moreover, in contrast to controlling the third collision angle θ3 of the drying liquid L to gradually decrease from 90°, the control unit 9 can also control the third collision angle θ3 of the drying gas G to gradually decrease from an angle smaller than 90°. This is because, from the beginning, the opening edge of the liquid film F is effectively pushed from the inside.

[0096] Furthermore, the control unit 9 controls the movement of the drying liquid nozzle 5C from the radially inner side to the radially outer side of the substrate W, causing the third collision angle θ3 of the drying liquid L to decrease continuously or stepwise. However, the technology of the present invention is not limited to this. For example, if the drying liquid L remains at the opening O of the liquid film F, the control unit 9 may control the movement to temporarily increase the third collision angle θ3 of the drying liquid L, thereby temporarily decreasing the opening edge of the liquid film F. Since the opening edge of the liquid film F is temporarily decreased, the control unit 9 may also control the movement to temporarily increase the third collision angle θ3 of the drying gas G. Subsequently, the control unit 9 controls the movement of the drying gas nozzle 5D from the radially inner side to the radially outer side, while continuously or stepwise decreasing the third collision angle θ3 of both the drying liquid and the drying gas G.

[0097] Furthermore, in this embodiment, the control unit 9 changes the fluid collision angle θ during the process of moving the nozzle 5 from the radially inner side to the radially outer side of the substrate W; however, the technology of the present invention is not limited to this. Alternatively, the control unit 9 may change the fluid collision angle θ during the process of moving the nozzle 5 from the radially outer side to the radially inner side of the substrate W. Furthermore, the fluid to which the collision angle θ is controlled is not limited to the drying liquid L and the drying gas G; it may also be a pharmaceutical solution or a rinsing solution.

[0098] The embodiments of the substrate processing apparatus and substrate processing method of the present invention have been described above, but the present invention is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. These also fall within the technical scope of the present invention.

[0099] For example, the release direction of the first nozzle 51 is not limited to directly downward, but can also be diagonally downward. For example, it can be... Figure 6 One of the two second nozzle sections 52 shown is used as the first nozzle section 51. In this case, when the first nozzle section 51 and the second nozzle section 52 release the drying liquid L at the same release rate, a liquid flow from the intersection point B to directly below can be formed.

Claims

1. A substrate processing apparatus, characterized in that, include: Keep the substrate in a horizontal position; A substrate rotating part that allows the substrate and the holding part to rotate together about a vertical rotation axis; A nozzle that supplies fluid to the upper surface of the substrate held by the holding portion; A supply unit that supplies the fluid to the nozzle; and A moving part that moves the nozzle radially on the substrate. The nozzle includes: a first nozzle portion that releases the fluid; and a second nozzle portion that releases the fluid in a direction different from the first nozzle portion. The rays emitted from the first nozzle and the rays emitted from the second nozzle intersect at the intersection point. The supply unit includes: a first flow controller that controls the release amount of the first nozzle; and a second flow controller that controls the release amount of the second nozzle in a manner independent of the release amount of the first nozzle. The nozzle further includes a rotating part that rotates the second nozzle part around the ray emitted by the first nozzle part, thereby adjusting the direction of the horizontal component of the ray emitted by the second nozzle part by rotating the horizontal component of the ray emitted by the second nozzle part around the intersection point.

2. The substrate processing apparatus as described in claim 1, characterized in that: The second nozzle section has four or more nozzles arranged at equal intervals around the ray emitted by the first nozzle section.

3. The substrate processing apparatus as described in claim 1 or 2, characterized in that: The first nozzle includes a discharge port for discharging the fluid to the intersection directly below it. The second nozzle includes a release port that releases the fluid at the intersection at an angle downwards.

4. The substrate processing apparatus as described in claim 3, characterized in that: The area of ​​the release port of the first nozzle is greater than or equal to the area of ​​the release port of the second nozzle.

5. The substrate processing apparatus as described in claim 1 or 2, characterized in that: The fluid is either a drying liquid that gradually exposes the substrate from its center outwards after covering the entire upper surface of the substrate, or a drying gas that pushes against the opening edge of the drying liquid.

6. The substrate processing apparatus as described in claim 1 or 2, characterized in that, include: A detection unit for detecting the collision angle of the fluid on the upper surface of the substrate; and The control unit controls the first flow controller and the second flow controller to reduce the deviation between the detection value and the set value of the detection unit.

7. A substrate processing method, characterized in that: The step includes moving a nozzle supplying fluid to the upper surface of the substrate radially while holding the substrate horizontal and rotating it about a vertical axis of rotation. The nozzle includes: a first nozzle portion that releases the fluid; and a second nozzle portion that releases the fluid in a direction different from the first nozzle portion. The rays emitted from the first nozzle and the rays emitted from the second nozzle intersect at the intersection point. The substrate processing method includes: The step of changing at least one of the release amount of the first nozzle portion and the release amount of the second nozzle portion midway through the radial movement of the nozzle on the substrate; and The step of rotating the second nozzle with the ray emitted from the first nozzle as the center, and adjusting the direction of the horizontal component of the ray emitted from the second nozzle by rotating the horizontal component of the ray emitted from the second nozzle with the intersection point as the center.

8. The substrate processing method as described in claim 7, characterized in that: The first nozzle releases the fluid towards the intersection directly below. The second nozzle releases the fluid at the intersection point diagonally downwards.

9. The substrate processing method as described in claim 7 or 8, characterized in that: This includes the step of continuously or stepwise reducing the first collision angle during the process of moving the nozzle from the radially inner side to the radially outer side of the substrate. Wherein, the first collision angle is the angle formed by the straight line connecting the point of collision of the fluid with the upper surface of the substrate and the center point of the upper surface of the substrate, as viewed from the direction of the straight line connecting the intersection point and the point of collision, and the upper surface of the substrate. The more the collision point is shifted forward in the direction of rotation of the substrate compared to the point directly below the intersection point on the upper surface of the substrate, the smaller the first collision angle becomes.

10. The substrate processing method as described in claim 7 or 8, characterized in that: This includes the step of continuously or stepwise increasing the second collision angle during the process of moving the nozzle from the radially inner side to the radially outer side of the substrate. Wherein, the second collision angle is the angle formed by the straight line connecting the point directly below the intersection of the upper surface of the substrate and the point of collision of the fluid on the upper surface of the substrate, and the tangent at the point of collision of the circle centered on the center point of the upper surface of the substrate. The further the collision point is offset from the directly below point in the radial direction outward from the substrate, the larger the second collision angle becomes.

11. The substrate processing method as described in claim 7 or 8, characterized in that: This includes the step of continuously or stepwise decreasing the third collision angle during the process of moving the nozzle from the radially inner side to the radially outer side of the substrate. The third collision angle is the angle formed by the straight line connecting the intersection point and the collision point on the upper surface of the substrate, taken from the tangent direction of the circle centered at the center point of the upper surface of the substrate, and the upper surface of the substrate. The further the collision point is offset from the point directly below the intersection point on the upper surface of the substrate in a radially outward direction from the substrate, the smaller the third collision angle becomes.

12. The substrate processing method as described in claim 7 or 8, characterized in that: The fluid is either a drying liquid that gradually exposes the substrate from its center outwards after covering the entire upper surface of the substrate, or a drying gas that pushes against the opening edge of the drying liquid.

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