Substrate processing device with electrostatic chuck and substrate processing method

Abstract

An example of a substrate processing apparatus includes: a chamber; an upper cover disposed in the chamber; an electrostatic chuck including an annular portion of a dielectric body and an embedded electrode embedded in the annular portion, the electrostatic chuck being disposed in the chamber; and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than that of the first upper surface.

Description

Technical Field

[0001] Examples related to a substrate processing apparatus and a substrate processing method are described. Background Art

[0002] US 9,881,788 B discloses a method and apparatus for depositing a stress compensation layer and a sacrificial layer on one of the front and rear surfaces of a substrate. Specifically, backside deposition is performed with the front surface of the wafer oriented upward. Such deposition of the layer on the front or rear surface may be performed to reduce stress introduced by deposition of the wafer on the front surface. Backside deposition may be performed to minimize problems associated with backside particles generated during post-deposition processing such as photolithography. Improvements to this technique are desired. Summary of the invention

[0003] Some examples described herein may solve the above-mentioned problems.Some examples described herein may provide a substrate processing apparatus and a substrate processing method that enable plasma processing to be performed on a lower surface of a substrate.

[0004] In some examples, a substrate processing apparatus includes: a chamber; an upper cover disposed in the chamber; an electrostatic chuck including an annular portion of a dielectric body and an embedded electrode embedded in the annular portion, the electrostatic chuck being disposed in the chamber; and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than that of the first upper surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 is a cross-sectional view showing a configuration example of a substrate processing apparatus;

[0006] Figure 2 is a plan view of an electrostatic chuck;

[0007] Figure 3 is a cross-sectional view showing the rotating arm being rotated;

[0008] Figure 4 is a plan view showing a configuration example of a rotating arm;

[0009] Figure 5 is a plan view of the rotating arm and electrostatic chuck;

[0010] Figure 6 is a cross-sectional view showing the introduction of a substrate;

[0011] Figure 7 is a cross-sectional view showing contact between a substrate and an electrostatic chuck;

[0012] Figure 8 is a plan view of a substrate supported by an electrostatic chuck;

[0013] Fig. 9 is a cross-sectional view showing an example of plasma processing;

[0014] Fig. 10A is a cross-sectional view showing a configuration example of a substrate processing apparatus according to another example;

[0015] Fig. 10B yes Fig. 10A an enlarged view of a portion of;

[0016] Fig.11 is a cross-sectional view showing a configuration example of a substrate processing apparatus including a microwave plasma generating apparatus;

[0017] Fig.12 is a cross-sectional view showing a configuration example of a substrate processing apparatus including an inductively coupled plasma apparatus; and

[0018] Fig.13 is a cross-sectional view showing another configuration example of a substrate processing apparatus including an inductively coupled plasma apparatus. DETAILED DESCRIPTION

[0019] A substrate processing apparatus and a substrate processing method will be described with reference to the accompanying drawings. There are cases where the same reference numerals are assigned to the same or corresponding components, and duplicate descriptions are omitted.

[0020] Figure 1 1 is a cross-sectional view showing a configuration example of a substrate processing apparatus according to an embodiment. The substrate processing apparatus is a parallel plate type plasma processing apparatus. A door 12 is attached to a chamber 10 so that a substrate can be provided to or taken out of the interior of the chamber 10. The chamber 10 may be provided as part of a dual chamber module (DCM) or as part of a quad chamber module (QCM). An upper cover 14 is provided inside the chamber 10. According to an example, the upper cover 14 is provided as a ground electrode. The ground electrode is an electrode for grounding.

[0021] The upper cover 14 includes a shaft portion 14a and a disk portion 14b connected to the shaft portion 14a. The shaft portion 14a is fixed at a first lifting mechanism 16 and can move in the positive and negative directions of z, and the first lifting mechanism 16 can move in the positive and negative directions of z. According to an example, the first lifting mechanism 16 is provided by fixing a plate 16a fixed to the shaft portion 14a at the upper end of a bellows 16b and fixing a plate 16c fixed to the chamber 10 at the lower end of the bellows 16b. As the first lifting mechanism 16, various structures that allow the upper cover 14 to move up and down in the chamber 10 can be adopted.

[0022] The disk portion 14b has a circular or substantially circular shape in a plan view. The lower surface of the disk portion 14b, as the lower surface of the upper cover 14, has, for example, a first lower surface 14c and a second lower surface 14d surrounding the first lower surface 14c and located below the first lower surface 14c. Therefore, the lower surface of the disk portion 14b has a shape having a recessed portion in the center.

[0023] The upper cover 14 as a ground electrode serves as an upper electrode having a parallel plate structure. In order to enable plasma coupling and prevent or reduce discharge, the height difference between the first lower surface 14c and the second lower surface 14d may be made equal to or less than 1 mm, for example.

[0024] The electrostatic chuck 20 is disposed inside the chamber 10. The electrostatic chuck 20 includes: a support body 20a; an annular portion 20b connected to the lower end of the support body 20a; and an embedded electrode 20c embedded in the support body 20a and the annular portion 20b. The support body 20a is fixed at a second lifting mechanism 22. The second lifting mechanism 22 is configured to move the electrostatic chuck 20 up and down in the chamber 10. According to an example, the second lifting mechanism 22 is provided by fixing a plate 22a fixed at the support body 20a to an upper end of a bellows 22b, and fixing a plate 22c fixed at the chamber 10 to a lower end of the bellows 22b. As the second lifting mechanism 22, various configurations that move the electrostatic chuck 20 up and down in the chamber 10 may be adopted.

[0025] The support body 20a and the annular portion 20b may be formed of, for example, a dielectric body. The annular portion 20b has an annular shape in a plan view. The annular portion 20b includes an annular first upper surface 20d located just below the upper cover 14, and a second upper surface 20e located just below the upper cover 14 and surrounding the first upper surface 20d. The height of the second upper surface 20e is higher than the height of the first upper surface 20d. The height difference between the first upper surface 20d and the second upper surface 20e is, for example, greater than the thickness of the substrate to be processed.

[0026] Figure 2 20 is a plan view of the electrostatic chuck 20. The annular portion 20b is formed in a circular or substantially circular shape. The first upper surface 20d provides an annular surface, and the second upper surface 20e provides an annular surface surrounding the first upper surface 20d. Figure 2 The dotted line in denoted the embedded electrode 20c. The embedded electrode 20c is embedded in the support body 20a and the annular portion 20b. When a positive or negative voltage is applied to the embedded electrode 20c from an external power source, dielectric polarization occurs at the annular portion 20b as a dielectric body.

[0027] Figure 1It is shown that the embedded electrode 20c is located immediately below the first upper surface 20d. Therefore, when a voltage is applied to the embedded electrode 20c, dielectric polarization occurs on the first upper surface 20d and its vicinity. When a substrate that is easily polarized (such as a silicon substrate) is placed on the first upper surface 20d while being charged in this way, an attractive force is generated due to the clone force at the annular portion 20b and the substrate, so that the substrate can be held by the annular portion 20b. Because the substrate is held by the annular portion 20b, it is not necessary to dielectrically polarize the support body 20a. Therefore, for example, a ceramic tube can be provided as the support body 20a and the embedded electrode 20c can be passed through the ceramic tube.

[0028] Figure 1 There is shown a rotating arm 30 located near the inner wall of the chamber 10. The rotating arm 30 is provided to transfer the substrate into four chambers constituting, for example, the QCM.

[0029] The substrate processing apparatus includes a plasma unit configured to generate plasma in a region below the upper cover 14 and the electrostatic chuck 20. According to an example, it is sufficient when plasma can be provided just below a region surrounded by the annular portion 20b. Figure 1 In the example of , the plasma unit includes a shower plate 34, gas sources 41 and 42, and an RF power supply 43. The shower plate 34 is disposed below the upper cover 14 to face the upper cover 14. The shower plate 34 includes: plates 36 and 40 having slits for supplying gas from the gas sources 41 and 42 along the positive z direction; and a spacer 38 disposed between the plates. The entire shower plate 34 may be formed of metal. According to another example, at least the plate 40 is formed of metal. The gas sources 41 and 42 provide gases necessary for plasma processing. The RF power supply 43 provides high-frequency power for putting the gas in a plasma state to the shower plate 34.

[0030] In this manner, the substrate processing apparatus may perform plasma processing using the parallel plate structure including the upper cover 14 and the shower plate 34 .

[0031] An example of a substrate processing method using the substrate processing apparatus will be described. Figure 3 FIG. 2 is a cross-sectional view of a substrate processing apparatus immediately before a substrate is transferred into a chamber. Figure 3 As shown, the upper cover 14 is evacuated upward by, for example, a motor 50 that moves the first lifting mechanism 16. In addition, the electrostatic chuck 20 is evacuated upward by, for example, a motor 52 that moves the second lifting mechanism 22.

[0032] Thereafter, by the rotation of the rotation arm 30 , the support pins as a part of the rotation arm are provided to the substrate receiving position in the chamber 10 . Figure 430 is a plan view showing a configuration example of the rotating arm 30. In this example, a QCM having four chambers is provided. By the rotating arm 30 rotating, support pins 30a, 30b, and 30c for supporting a substrate are provided to one of the four chambers 10.

[0033] Figure 5 2 is a plan view of support pins 30a, 30b, and 30c and electrostatic chuck 20. Support pins 30a, 30b, and 30c are provided at positions of electrostatic chuck 20 surrounded by annular portion 20b.

[0034] Then, after the electrostatic chuck 20 moves downward and the annular portion 20 b is located below the upper ends of the support pins 30 a , 30 b , and 30 c , the substrate is placed on the support pins 30 a , 30 b , and 30 c provided just below the upper cover 14 . Figure 6 1 is a diagram showing that a substrate 54 is placed on the support pins 30a, 30b and 30c. For example, an outer arm supporting the substrate 54 provides the substrate 54 on the support pins 30a, 30b and 30c through the door 12. The substrate 54 includes an upper surface 54a and a lower surface 54b. The substrate 54 is, for example, a wafer formed of silicon or a wide bandgap semiconductor.

[0035] Then, by moving the annular portion 20 b upward, the annular first upper surface 20 d comes into contact with the outer edge portion of the lower surface of the base plate 54 . Figure 7 2 is a diagram showing a state in which the first upper surface 20d is in contact with the outer edge portion of the lower surface 54b of the substrate 54. In the process in which the annular portion 20b moves to a position above the upper ends of the support pins 30a, 30b, and 30c, the support pins 30a, 30b, and 30c are separated from the substrate 54, and when the first upper surface 20d supports the outer edge portion of the lower surface of the substrate 54, the central portion of the lower surface of the substrate 54 is exposed. Then, by rotating the rotating arm 30, the support pins are evacuated from the position immediately below the upper cover 14.

[0036] Figure 8 yes Figure 7 A plan view of the electrostatic chuck 20 and the substrate 54 in FIG. Figure 8 In FIG. 2 , since the substrate 54 contacts the first upper surface 20d, all or most of the first upper surface 20d cannot be seen in the plan view, and the second upper surface 20e appears. The inner edge of the first upper surface 20d is indicated by a dotted line.

[0037] Then, the second upper surface 20 e is in close contact with the upper cover 14 , while avoiding contact between the upper cover 14 and the substrate 54 . Fig. 9The second upper surface 20e of the electrostatic chuck 20 is shown to be in close contact with the second lower surface 14d of the upper cover 14. In this example, the second upper surface 20e is in close contact with the second lower surface 14d by the downward movement of the upper cover 14. According to an example, the contact between the upper cover 14 and the substrate 54 can be prevented by providing the first lower surface 14c located above the second lower surface 14d at the upper cover 14.

[0038] The second upper surface 20e is located immediately below the second lower surface 14d, and when the second lower surface 14d contacts the second upper surface 20e, the flow of gas through the space between the upper cover 14 and the electrostatic chuck 20 is blocked. In another example, in the case where the lower surface of the disk portion 14b of the upper cover 14 is made flat, since the lower surface of the upper cover contacts the second upper surface 20e, the flow of gas through the space between the lower surface of the upper cover and the second upper surface 20e is blocked. In addition, the entire outer edge portion of the lower surface 54b of the substrate 54 is attracted to the first upper surface 20d by the electrostatic chuck 20.

[0039] According to the example, in Fig. 9 In the illustrated state, a space surrounded by the substrate 54, the electrostatic chuck 20, and the upper cover 14 becomes a closed space. In this case, the gas supplied from the gas sources 41 and 42 and the plasma provided between the parallel plates are not actually provided to the closed space.

[0040] Then, plasma treatment is performed on the lower surface 54b of the substrate 54. Specifically, in a state where the substrate 54 is attracted to the first upper surface 20d by the electrostatic chuck 20, plasma treatment is performed on the central portion of the lower surface of the substrate 54 using the above-mentioned plasma unit. According to an example, a large amount of plasma treatment on the upper surface 54a of the substrate 54 is prevented by making the space surrounded by the substrate 54, the electrostatic chuck 20, and the upper cover 14 a closed space during the plasma treatment.

[0041] It can be said that one side of the upper surface 54a of the substrate 54 is a device surface on which the device is formed. In this case, the device can be protected by avoiding contact between the substrate 54 and the upper cover 14. Figure 1 The recess shown ensures this avoidance of contact.

[0042] As the plasma treatment, film formation, reforming of a film formed on a substrate, or etching may be employed. According to an example, in the plasma treatment, an oxide film or a nitride film is formed on the central portion of the lower surface 54b of the substrate 54. In this plasma treatment, a film may be formed on the lower surface 54b of the substrate 54, while film formation on the upper surface 54a of the substrate 54 is suppressed. According to an example, the film formed on the central portion of the lower surface 54b of the substrate 54 by the plasma treatment reduces the warping of the substrate 54.

[0043] In this manner, by causing the upper cover 14 to face the upper surface 54a of the substrate 54 while the electrostatic chuck 20 holds the outer edge portion of the lower surface 54b of the substrate 54, the space above the upper surface 54a of the substrate 54 becomes a closed space covered by the upper cover 14. In a state where the substrate 54 is electrostatically attracted by the electrostatic chuck 20, the plasma treatment can be performed on the central portion of the lower surface of the substrate 54. Note that whether the substrate 54 is held by the electrostatic chuck 20 can be switched at any time.

[0044] Fig. 10A is a cross-sectional view of a substrate processing apparatus according to another example. Fig. 10A It is shown that the chip 451 (chip 451 is Fig. 10A 4 is a simplified cross-sectional view of a device 400 deposited on the back side of the device 400 (shown as a black horizontal line in FIG. 4 ). Fig. 10B A close-up view of a portion of the device 400 is shown. Specifically, Fig. 10B 4 shows how a wafer 451 is supported in the apparatus 400. The wafer 451 is supported at or near the periphery of the wafer 451 by a wafer support ring 453. The support ring 453 can contact the wafer 451 on the bottom surface of the wafer, near the edge of the wafer in an area referred to as a support contact area. The support contact area is annular and can be very small so that substantially the entire back side of the wafer (e.g., at least about 95% or at least about 99% measured by surface area) is exposed during the deposition process. In some embodiments, the support contact area on the bottom of the wafer extends inward from the edge of the wafer by about 5 mm or less, such as about 1 mm or less. Fig. 10B In the example of FIG. 4 , the support contact area is on the bottom of the wafer 451 and extends inward from the periphery of the wafer a distance 461. The support ring 453 may also contact the top side of the wafer near the edge of the wafer. In these cases, the support contact area extends to the top side of the wafer. In this embodiment, the support ring may have a C-shape (rather than a C-shape as in FIG. Fig. 10B, extending both below and above the wafer at the periphery of the wafer. In the event that the support ring contacts the top side of the wafer, care should be taken to ensure that the support ring does not damage the front side of the wafer. Such care may include ensuring that the support ring contacts the front side of the wafer only in a small, defined area (the support contact area) and not in the active area. In some embodiments, the support contact area on the top of the wafer extends radially inward from the edge of the wafer by no more than about 0.5 mm, or no more than about 0.25 mm.

[0045] In some embodiments, the support ring may be replaced by another wafer support mechanism that supports the wafer at the periphery / near the wafer. An example is a series of three or more discrete pegs that support the wafer at different locations around the edge of the wafer. In some cases, the pegs may surround the wafer to better hold it in place during processing. The pegs (or other support mechanism) may contact the wafer in the support contact area described above.

[0046] In any case, the mechanism for holding the substrate can be designed so that the front side of the wafer does not substantially contact any part of the reactor. As used herein, this means that any contact between the front side of the wafer 451 and the wafer support mechanism 453 (e.g., support ring, pins, etc.) or other parts of the device only occurs near the edge of the wafer. The front side of the wafer includes an active area surrounded by an inactive peripheral area, and the device is manufactured in this active area. Due to the geometry of the wafer and the need to operate the wafer during processing, there is an inactive peripheral area. By ensuring that the active area on the front side of the wafer does not contact any part of the reactor, damage to the front side of the wafer can be minimized or completely avoided. In many cases, the contact that occurs at the very edge of the front side is no problem, because the inactive area of ​​the periphery is usually removed and discarded when the substrate is cut into individual devices. In this way, the contact that occurs in this area is not fatal to the final device formed on the wafer.

[0047] return Fig. 10A and Fig. 10BIn an embodiment of the present invention, the support ring 453 holds the wafer 451 above the deposition area 459. The deposition area 459 is the area where the reaction gas is introduced, reacted and deposited on the wafer 451. The deposition area 459 is at least approximately coextensive with the area of ​​the wafer 451. The bottom of the deposition area 459 can be defined by a lower surface 463, which also serves as a showerhead 463 in this embodiment. The lower surface 463 is generally substantially parallel to the wafer 451. In many cases, the height of the deposition area 459 (measured as the distance between the bottom side of the wafer 451 and the lower surface) can be relatively small. For example, the deposition area 459 can have a height between about 5-30 mm, such as a height between about 15-25 mm. In some embodiments, at least one of the lower electrode / showerhead surface 463 and the support ring 453 is movable so that the height of the deposition area 459 can be adjusted.

[0048] As mentioned, the lower surface 463 defines the bottom of the deposition area 459. In various embodiments, the bottom surface 463 is powered (e.g., using an RF power source). In some embodiments, the lower surface 463 is suitable for use as a showerhead to provide process gases as needed. In other embodiments, the lower surface 463 can be simpler and process gases can be provided through alternative inlets. Various different types of plasmas can be used. For example, the plasma can be generated directly in the deposition area 459 (i.e., direct plasma), or can be generated at different locations and piped into the deposition area (i.e., remote plasma). Any suitable plasma generator can be used. In various embodiments, the plasma is a capacitively coupled plasma generated between the powered lower electrode / showerhead 463 below the wafer 451 and the grounded upper electrode / top surface 455 above the wafer.

[0049] Above the wafer 451 is a small front side gap 457. The gap 457 extends between the top surface of the wafer 451 and the upper surface 455 in the reaction chamber. For illustration purposes, the Fig. 10A The size of the gap in the upper surface 455 can be a heater, a ground plate, a chamber ceiling, or another type of plate / surface. In many cases, the upper surface 455 serves as an electrode. In some embodiments, the height of the front side gap 457 is about 0.5 mm or less, such as about 0.35 mm or less. In these or other embodiments, the height of the front side gap 457 can be at least about 0.1 mm or more, such as at least about 0.25 mm or more. In many cases, the upper surface 455 is substantially parallel to the wafer. The upper surface / electrode 455 can also be as Fig. 10B The wafer support ring 453 is shown extending around the edge of the substrate so that it contacts the wafer support ring 453. During deposition, an inert gas (e.g., N 2, Ar, etc.) is introduced from the front side inlet 465 and passes through the front side of the wafer 451. The front side inlet 465 can be positioned at or near the center of the wafer 451 so that the inert gas flows outward from the center of the wafer. The inert gas flowing outward helps to ensure that the gas causing the deposition does not enter the front side gap 457 or does not contact the front side of the wafer 451. In other words, the inert gas flow helps to ensure that no material can be deposited on the front side of the wafer 451 during the back-test deposition. In order to further protect the front side of the wafer 451, the front side gap 457 can be designed so that it is less than the thickness of the plasma sheath. This helps to ensure that the plasma does not enter the front side gap, otherwise it will damage the substrate.

[0050] In many cases, the plasma is a capacitively coupled plasma generated between an upper electrode and a lower electrode. In some cases, the upper electrode can be connected to ground and the lower electrode can be connected to an RF source. The lower electrode can be partially operated to collect electrons from the plasma. In various cases, dual RF (e.g., using and controlling both LF and HF frequencies and powers) can be used to modulate the stress of the deposited film.

[0051] In some embodiments, the backside deposition reactor is a bevel cleaning apparatus that has been modified to perform backside deposition. An example of a processing apparatus that may be modified is the LAMBDA® from Lam Research of Fremont, California. Plasma bevel cleaning apparatus. The apparatus is further discussed in the following U.S. patents, each of which is incorporated herein by reference in its entirety: U.S. Patent No. 7,858,898, filed on January 26, 2007, and entitled "Bevel etcher with gap control"; U.S. Patent No. 7,943,007, filed on January 26, 2007, and entitled "Configurable bevel etcher"; and U.S. Patent No. 8,562,750, filed on December 17, 2009, and entitled "Method and apparatus for processing bevel edges".

[0052] Modifications that can be used to perform backside deposition generally include the installation of a different wafer support (e.g., a ring-shaped wafer support that supports the wafer at its periphery and allows the backside of the wafer to remain exposed to the plasma during processing) and the installation of (or changes to) a different gas delivery system (e.g., one that delivers deposition gas to a deposition region below the backside of the wafer while also delivering an inert gas to a frontside gap above the frontside of the wafer). Additionally, a heater and / or grounding plate can be added above the wafer if not already present.

[0053] like Fig. 10A and 10BAs shown, the embedded electrode 453a is embedded in the wafer support ring 453 so that the wafer support ring 453 can be used as an electrostatic chuck, as explained above. In some examples, the embedded electrode 453a can be placed just below the wafer 451 to ensure the electrostatic chuck function. In other words, the embedded electrode 453a extends to a position just below the distance 461.

[0054] Fig.11 1 is a cross-sectional view of a substrate processing device according to another example. In this example, a microwave plasma generating device is provided as a plasma unit. A plurality of rods 64 are provided in the chamber 10. The rod 64 includes a conductor 60 and a dielectric body 62 surrounding the conductor 60. Microwaves are provided from a coaxial waveguide to the inside of the dielectric body 62. That is, the microwaves fed from the microwave feeding portion of the coaxial waveguide eventually reach the plurality of rods 64. Then, the microwave energy generates an electric field outside the dielectric body 62 of the rod 64, thereby generating plasma 70. In this way, at the microwave plasma generating device, plasma is generated at the plurality of rods 64. The substrate 54 can be electrostatically attracted to the first upper surface 20d by the electrostatic chuck 20.

[0055] In the case where the microwave plasma generating apparatus is used, the upper cover 14 is not used as a parallel plate but as a cover of the substrate 54. Therefore, the height difference between the first lower surface 14c and the second lower surface 14d can be increased to avoid contact between the substrate 54 and the upper cover 14. In other words, a deep recess can be provided at the central portion of the lower surface of the upper cover 14. In addition, in the case of a parallel plate, the distance from the substrate to the upper cover changes due to a change in the warpage of the substrate 54, which changes the plasma density, but such a problem does not occur by using the microwave plasma generating apparatus.

[0056] Fig.12 1 is a cross-sectional view of a substrate processing apparatus according to another example. In this example, an inductively coupled plasma apparatus is provided as a plasma unit. An ICP reactor 120 can process a substrate with a high-density plasma. Suitable ICP reactors include TCP.TM systems from LAM Research, Inc. of Fremont, California. See also U.S. Patent No. 4,948,458 to inventor Ogle, which is incorporated herein. The reactor includes a processing chamber 121 in which a plasma 122 is generated near a substrate 123. An upper cover 124 is disposed above the substrate 123.

[0057] Temperature control of the substrate 124 is achieved by supplying helium through a conduit 125 to the space between the substrate and the upper cover 124. The upper cover 124 may include anodized aluminum electrodes that may be heated or a ceramic material with embedded electrodes therein, and is powered by an RF source 126 and associated circuitry 127 for providing RF matching, etc.

[0058] The temperature of the substrate 123 during its processing is monitored by a temperature monitoring device 128 attached to the temperature probe 29 .

[0059] To provide vacuum in chamber 121, a turbo pump is connected to the outlet and a pressure control valve can be used to maintain the desired vacuum pressure. Process gas can be supplied into chamber 121 through pipes 131, 132, which feed reactive gas to a gas distribution ring extending around dielectric window 133, or the process gas can be supplied through the dielectric showerhead window.

[0060] RF power is supplied by an RF source 135 and associated circuitry 136 for impedance matching etc. to an external ICP coil 134 located outside the chamber near the window.

[0061] As will be apparent, the outer induction coil 134 is substantially planar and typically comprises a single conductive element formed as a planar spiral or a series of concentric rings. The planar configuration allows the coil to be easily scaled up by employing a longer conductive element to increase the coil diameter and thereby accommodate larger substrates, or multiple coil arrangements can be used to generate a uniform plasma over a large area. When processing substrates in the chamber, the RF source 135 preferably supplies RF current to the coil 134 in the range of about 100 kHz-27 MHz, and more preferably at 13.56 MHz, and the RF source 126 preferably supplies RF current to the cover 124 in the range of about 100 kHz-27 MHz, and more preferably at 400 kHz, 4 MHz, or 13.56 MHz. By supplying RF power to the electrode, a large DC sheath voltage can be provided below the surface of the substrate.

[0062] During the gap fill step, an RF bias is applied to the substrate to produce ion bombardment of the growing film. The RF frequency can be any value above that necessary to maintain a steady-state sheath, which is several hundred kHz. The substrate bias has many beneficial effects on the properties of the film and can also be used to sputter the growing film simultaneously during the gap fill step. This allows narrow and high aspect ratio gaps to be quickly filled with high quality dielectrics. The RF bias can be used during the cap layer deposition step.

[0063] The ICP reactor 120 can be used to perform the gap filling process of the present invention, wherein heavy noble gases are used to increase the etch to deposition rate ratio (EDR) for void-free filling of high aspect ratio gaps less than 0.5 μm. The gap filling process is further described in co-pending U.S. Patent Application No. 08 / 623,825, entitled "Improved Methods for High Density Plasma CVD Gap Filling," filed on March 29, 1996, which is incorporated herein.

[0064] exist Fig.12 In the substrate processing apparatus of the present invention, the above-mentioned electrostatic chuck 20 is provided. The electrostatic chuck 20 is provided to electrostatically attract the outer edge portion of the lower surface of the substrate 123. The substrate 123 is held by the electrostatic chuck 20, and plasma processing such as, for example, film formation is performed on the lower surface of the substrate 123.

[0065] Fig.13 is a cross-sectional view of a substrate processing apparatus according to another example. Fig.13 The device and Fig.12 The device is similar to that in Fig.13 The device and Fig.12 The difference of the device in FIG. 1 is that the upper cover 124 contacts the second upper surface 20 e. Providing a closed space by the substrate 123 , the electrostatic chuck 20 , and the upper cover 124 on the upper surface side of the substrate 123 helps suppress plasma processing on the upper surface of the substrate 123 .

Claims

1. A substrate processing device, comprising: Chamber; An upper cover, the upper cover is arranged in the chamber; an electrostatic chuck including an annular portion of a dielectric body and an embedded electrode embedded in the annular portion, the electrostatic chuck being disposed within the chamber; as well as a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, The annular portion includes an annular first upper surface located below and adjacent to the upper cover in a vertical direction and a second upper surface located below and adjacent to the upper cover in a vertical direction and surrounding the first upper surface, wherein the second upper surface has a height higher than that of the first upper surface. The lower surface of the upper cover includes a first lower surface and a second lower surface surrounding the first lower surface and located below the first lower surface.

2. The substrate processing apparatus according to claim 1, wherein: The plasma unit includes a shower plate disposed below the upper cover to face the upper cover.

3. The substrate processing apparatus according to claim 2, wherein: The upper cover is provided as a ground electrode.

4. The substrate processing apparatus according to claim 1, wherein: The plasma unit includes a microwave plasma generating device.

5. The substrate processing apparatus according to claim 1, wherein: The plasma unit includes an inductively coupled plasma device.

6. The substrate processing apparatus according to claim 1, wherein: The second upper surface is located below and adjacent to the second lower surface in a vertical direction, and when the second lower surface is in contact with the second upper surface, flow of gas through a space between the upper cover and the electrostatic chuck is suppressed.

7. The substrate processing device according to any one of claims 1 to 5, wherein: When the lower surface of the upper cover contacts the second upper surface, flow of gas through a space between the first lower surface and the second upper surface of the upper cover is blocked.

8. The substrate processing device according to any one of claims 1 to 5, comprising: a first lifting mechanism configured to move the upper cover up and down within the chamber; and The second lifting mechanism is configured to move the electrostatic chuck up and down in the chamber.

9. The substrate processing device according to any one of claims 1 to 5, wherein: The embedded electrode is located below and adjacent to the first upper surface in a vertical direction.

10. The substrate processing apparatus according to any one of claims 1 to 5, wherein: The support pin is arranged to be able to be withdrawn from a position below and adjacent to the upper cover in the vertical direction.

11. A substrate processing method according to claim 1, comprising: placing the substrate on a support pin, which is disposed below and adjacent to the upper cover in a vertical direction; exposing a central portion of a lower surface of the substrate while supporting an outer edge portion of the lower surface of the substrate with an annular first upper surface of an electrostatic chuck; bringing a second upper surface of the electrostatic chuck into close contact with the upper cover while avoiding contact between the upper cover and the substrate, the second upper surface surrounding the first upper surface and having a height higher than that of the first upper surface; as well as In a state where the substrate is attracted to the first upper surface by the electrostatic chuck, plasma processing is performed on the central portion of the lower surface of the substrate.

12. The substrate processing method according to claim 11, wherein: A closed space surrounded by the substrate, the electrostatic chuck, and the upper cover is created during the plasma processing.

13. The substrate processing method according to claim 11, wherein: The entire outer edge portion of the lower surface of the substrate is attracted to the first upper surface by the electrostatic chuck.

14. The substrate processing method according to claim 11, wherein: In the plasma processing, an oxide film or a nitride film is formed at the central portion of the lower surface of the substrate.

15. A substrate processing method of the substrate processing apparatus according to claim 1, comprising: By holding the outer edge portion of the lower surface of the substrate with an electrostatic chuck while making the upper surface of the substrate face the upper cover, a space above the upper surface of the substrate becomes a closed space covered by the upper cover; and In a state where the substrate is electrostatically attracted by the electrostatic chuck, plasma processing is performed on a central portion of the lower surface of the substrate.

16. The substrate processing method according to claim 15, wherein: In the plasma processing, a film is formed on the lower surface of the substrate, while film formation on the upper surface of the substrate is suppressed.

17. The substrate processing method according to claim 16, wherein: Warping of the substrate is reduced by the plasma treatment.

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