Baffle component and substrate processing device

Abstract

A barrier member and a substrate processing apparatus are provided for suppressing damage to the barrier member. The barrier member includes an inner ring portion; an outer ring portion disposed outside the inner ring portion; and a connecting portion connecting the inner ring portion and the outer ring portion, wherein the connecting portion includes a plurality of arc-shaped openings arranged radially and circumferentially and extending in the circumferential direction; a rigid portion formed between adjacent openings on the same circumference; and a wall portion formed between adjacent openings in the radial direction and connecting one rigid portion to another rigid portion.

Description

Technical Field

[0001] The present disclosure relates to a barrier component and a substrate processing device. Background Art

[0002] A substrate processing apparatus for performing necessary processing such as etching on a substrate is provided with a baffle member for allowing gas to flow.

[0003] Patent Document 1 discloses a baffle assembly including a baffle having radially arranged slots.

[0004] <Prior Art Literature>

[0005] <Patent Document>

[0006] Patent Document 1: (Japanese) Patent Publication No. 2007-525825 Summary of the Invention

[0007] <Problems to be Solved by the Invention>

[0008] In one aspect, the present disclosure provides a barrier member and a substrate processing apparatus that suppress damage to the barrier member.

[0009] <Methods used to solve the problem>

[0010] In order to solve the above problems, according to one embodiment, a barrier component is provided, including: an inner ring portion; an outer ring portion, which is arranged on the outside relative to the inner ring portion; and a connecting portion, which connects the inner ring portion with the outer ring portion, wherein the connecting portion has: a plurality of arc-shaped openings, which are arranged in the radial and circumferential directions and extend in the circumferential direction; a rigid body portion, which is formed between the adjacent openings on the same circumference; and a wall portion, which is formed between the adjacent openings in the radial direction and connects one rigid body portion with another rigid body portion.

[0011] <Effects of the Invention>

[0012] According to one aspect, a barrier member and a substrate processing apparatus capable of suppressing damage to the barrier member can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic cross-sectional view illustrating an example of a substrate processing apparatus according to an embodiment.

[0014] Figure 2 is a partially enlarged plan view showing one example of a baffle according to one embodiment.

[0015] Figure 3Schematic diagram of deformation of a baffle according to one embodiment when the inner ring portion and the outer ring portion are offset in the height direction.

[0016] Figure 4 This is an example of a cross-sectional view showing the cross-sectional shape and deformation direction of the wall portion.

[0017] Figure 5 It is a partially enlarged plan view showing an example of a baffle according to the first reference example.

[0018] Figure 6 It is a partially enlarged plan view showing an example of a baffle according to the second reference example.

[0019] Figure 7 Schematically illustrates the deformation of the baffle according to the second reference example when the inner ring portion and the outer ring portion are offset in the height direction. DETAILED DESCRIPTION

[0020] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In each of the drawings, the same components are given the same reference numerals, and overlapping descriptions may be omitted.

[0021] <Substrate Processing Apparatus>

[0022] use Figure 1 A substrate processing apparatus 1 according to one embodiment will be described. Figure 1 FIG. 1 is a schematic cross-sectional view illustrating an example of a substrate processing apparatus 1 according to an embodiment.

[0023] The substrate processing apparatus 1 includes a chamber 10. The chamber 10 defines an interior space 10s. The chamber 10 includes a chamber body 11. The chamber body 11 is generally cylindrical and is formed, for example, from aluminum. A corrosion-resistant film is provided on the inner wall surface of the chamber body 11. The film may be made of a ceramic such as aluminum oxide or yttrium oxide.

[0024] A passage 11 p is formed on a side wall of the chamber body 11 . The substrate W is transported between the internal space 10 s and the outside of the chamber 10 through the passage 11 p. The passage 11 p is opened or closed by a gate valve 11 g provided along the side wall of the chamber body 11 .

[0025] A support portion 13 is provided on the bottom of the chamber body 11 via a base plate made of aluminum or the like. The support portion 13 is formed of an insulating material and has a generally cylindrical shape. The support portion 13 extends upward from the bottom of the chamber body 11 within the internal space 10s. The support portion 13 has a support table 14 at its upper portion. The support table 14 is configured to support the substrate W within the internal space 10s.

[0026] The support platform 14 includes a lower electrode 18 and an electrostatic chuck 20. The support platform 14 may further include an electrode plate 16. Electrode plate 16 is formed of a conductor such as aluminum and has a generally disc-shaped shape. Lower electrode 18 is disposed on electrode plate 16. Lower electrode 18 is formed of a conductor such as aluminum and has a generally disc-shaped shape. Lower electrode 18 is electrically connected to electrode plate 16.

[0027] The electrostatic chuck 20 is disposed on the lower electrode 18. A substrate W is placed on the upper surface of the electrostatic chuck 20. The electrostatic chuck 20 has a main body and electrodes. The main body of the electrostatic chuck 20 has a substantially disc-shaped shape and is formed of a dielectric. The electrodes of the electrostatic chuck 20 are film-shaped electrodes and are disposed within the main body of the electrostatic chuck 20. The electrodes of the electrostatic chuck 20 are connected to a DC power supply 20p via a switch 20s. When a voltage from the DC power supply 20p is applied to the electrodes of the electrostatic chuck 20, an electrostatic attraction force is generated between the electrostatic chuck 20 and the substrate W. This electrostatic attraction force holds the substrate W on the electrostatic chuck 20.

[0028] An edge ring 25 is disposed on the periphery of the lower electrode 18 so as to surround the edge of the substrate W. The edge ring 25 is used to improve the in-plane uniformity of plasma processing on the substrate W. The edge ring 25 may be formed of silicon, silicon carbide, quartz, or the like.

[0029] A flow path 18f is provided within the lower electrode 18. A heat exchange medium (e.g., refrigerant) is supplied to the flow path 18f via a pipe 22a from a cooler unit (not shown) located outside the chamber 10. The heat exchange medium supplied to the flow path 18f is returned to the cooler unit via a pipe 22b. In the substrate processing apparatus 1, the temperature of the substrate W placed on the electrostatic chuck 20 is regulated by heat exchange between the heat exchange medium and the lower electrode 18.

[0030] The substrate processing apparatus 1 is provided with a gas supply line 24. The gas supply line 24 supplies a heat transfer gas (eg, He gas) from a heat transfer gas supply mechanism between the upper surface of the electrostatic chuck 20 and the back surface of the substrate W.

[0031] The substrate processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is disposed above the support table 14. The upper electrode 30 is supported on the upper portion of the chamber body 11 via a member 32. The member 32 is formed of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 11.

[0032] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 is the lower surface on the side of the internal space 10s and defines the internal space 10s. The top plate 34 may be formed of a low-resistance conductor or semiconductor that generates little Joule heat. The top plate 34 has a plurality of gas exhaust holes 34a extending through the top plate 34 in the thickness direction.

[0033] The support body 36 supports the top plate 34 in a detachable manner. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided within the support body 36. The support body 36 has a plurality of gas holes 36b extending downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are respectively connected to the plurality of gas exhaust holes 34a. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0034] A valve group 42, a flow controller group 44, and a gas source group 40 are connected to the gas supply pipe 38. The gas source group 40, the valve group 42, and the flow controller group 44 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. The valve group 42 includes a plurality of on-off valves. The flow controller group 44 includes a plurality of flow controllers. Each of the plurality of flow controllers in the flow controller group 44 is a mass flow controller or a pressure-controlled flow controller. Each of the plurality of gas sources in the gas source group 40 is connected to the gas supply pipe 38 via a corresponding on-off valve of the valve group 42 and a corresponding flow controller of the flow controller group 44.

[0035] In the substrate processing apparatus 1, a shielding member 46 is detachably provided along the inner wall surface of the chamber body 11. The shielding member 46 is used to prevent reaction byproducts from adhering to the chamber body 11. In addition, a shielding member 47 is detachably provided along the outer periphery of the support portion 13 and the support table 14. The shielding member 47 is used to prevent reaction byproducts from adhering to the support portion 13 and the support table 14. The shielding members 46 and 47 are made of, for example, quartz (SiO2). In addition, a cylindrical body 48 formed of a corrosion-resistant insulator is arranged below the shielding member 47.

[0036] A baffle member 49 is provided between the support portion 13 and the side wall of the chamber body 11 . The baffle member 49 includes a baffle plate 100 and a cylindrical body 150 .

[0037] The baffle 100 is a disk-shaped component having a circular hole in the center for inserting the support portion 13, and includes an inner ring portion 110, an outer ring portion 120, and a connecting portion 130. The inner ring portion 110 is an annular component and is arranged above the bottom plate 12 and below the shielding component 47 on the outer peripheral side of the support portion 13. The outer ring portion 120 is an annular component arranged on the outer peripheral side of the inner ring portion 110. The connecting portion 130 connects the inner ring portion 110 and the outer ring portion 120, and is formed with a plurality of openings that enable gas to flow (see later). Figure 2 The baffle 100 is integrally formed of a material containing Si, such as Si or SiC, or a material containing aluminum.

[0038] The cylindrical body 150 is in the height direction (axial direction, Figure 1 The cylindrical member 150 is a generally cylindrical member extending in the vertical direction (in the vertical direction of the paper). The upper portion of the cylindrical member 150 is connected to the shielding member 46. The lower portion of the cylindrical member 150 is connected to the outer ring portion 120 of the baffle 100. The cylindrical member 150 is made of, for example, a material containing Si, such as Si or SiC, or a material containing aluminum.

[0039] It should be noted that while the configuration of the baffle member 49 is described using an example in which the inner ring portion 110, the outer ring portion 120, and the connecting portion 130 are integrally formed as the baffle plate 100, and the cylindrical body 150 is formed separately from the baffle plate 100, the configuration of the baffle member 49 is not limited to this. Alternatively, the baffle plate 100 and the cylindrical body 150 may be integrally formed as the baffle member 49. Furthermore, the baffle member 49 may consist of the plate-shaped baffle plate 100 and not include the cylindrical body 150.

[0040] An exhaust port 11e is provided below the barrier member 49 and at the bottom of the chamber body 11. An exhaust device 50 is connected to the exhaust port 11e via an exhaust pipe (not shown). The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump.

[0041] The substrate processing apparatus 1 includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply that generates a first high-frequency power. The first high-frequency power has a frequency suitable for plasma generation. The frequency of the first high-frequency power is, for example, a frequency in the range of 27 MHz to 100 MHz. The first high-frequency power supply 62 is connected to the lower electrode 18 via a matcher 66 and an electrode plate 16. The matcher 66 has a circuit for matching the output impedance of the first high-frequency power supply 62 with the impedance of the load side (lower electrode 18 side). It should be noted that the first high-frequency power supply 62 can be connected to the upper electrode 30 via the matcher 66. The first high-frequency power supply 62 constitutes an example of a plasma generating unit.

[0042] The second high-frequency power supply 64 is a power supply that generates a second high-frequency power. The frequency of the second high-frequency power is lower than the frequency of the first high-frequency power. When the second high-frequency power is used together with the first high-frequency power, the second high-frequency power is used as a high-frequency power for biasing ions to attract the substrate W. The frequency of the second high-frequency power is, for example, a frequency in the range of 400 kHz to 13.56 MHz. The second high-frequency power supply 64 is connected to the lower electrode 18 via the matching device 68 and the electrode plate 16. The matching device 68 has a circuit for matching the output impedance of the second high-frequency power supply 64 with the impedance of the load side (the lower electrode 18 side).

[0043] It should be noted that the second high-frequency power may be used instead of the first high-frequency power, that is, only a single high-frequency power may be used to generate plasma. In this case, the frequency of the second high-frequency power may be greater than 13.56 MHz, for example, 40 MHz. The substrate processing apparatus 1 may not include the first high-frequency power source 62 and the matching unit 66. The second high-frequency power source 64 constitutes an example of a plasma generating unit.

[0044] In the substrate processing apparatus 1, gas is supplied from the gas supply unit into the internal space 10s to generate plasma. Furthermore, the supply of the first high-frequency power and / or the second high-frequency power generates a high-frequency electric field between the upper electrode 30 and the lower electrode 18. The generated high-frequency electric field generates plasma.

[0045] The substrate processing apparatus 1 includes a power supply 70 . The power supply 70 is connected to the upper electrode 30 . The power supply 70 applies a voltage to the upper electrode 30 for attracting positive ions existing in the internal space 10 s to the top plate 34 .

[0046] The substrate processing device 1 may further include a control unit 80. The control unit 80 may be a computer having a processor, a storage unit such as a memory, an input device, a display device, a signal input and output interface, and the like. The control unit 80 controls the various units of the substrate processing device 1. In the control unit 80, the operator can use the input device to perform operations such as inputting commands to manage the substrate processing device 1. In addition, in the control unit 80, the working status of the substrate processing device 1 can be displayed in a visual manner through the display device. In addition, a control program and recipe data are stored in the storage unit. The control program is executed by the processor to perform various processes in the substrate processing device 1. The processor executes the control program and controls the various units of the substrate processing device 1 according to the recipe data.

[0047] Next, use Figure 2 The baffle 100 will be further described. Figure 2 is a partially enlarged plan view illustrating one example of a baffle 100 according to one embodiment.

[0048] The baffle 100 includes an annular inner ring portion 110, an annular outer ring portion 120 disposed radially outward of the inner ring portion 110, and a connecting portion 130 connecting the inner ring portion 110 and the outer ring portion 120. The inner ring portion 110 and the outer ring portion 120 are formed concentrically. The connecting portion 130 includes a plurality of arc-shaped openings 131A to 131M, which are arranged radially and circumferentially and extend circumferentially. Each opening 131A to 131M is formed as an arc-shaped slot, with the centerline of the slot forming an arc.

[0049] When viewed in the radial direction, a plurality of (at least two or more) openings 131A to 131M are formed on the baffle 100. Figure 2 In the description, the openings 131A to 131M are described in order of the arc radius of the center line from the smallest to the largest.

[0050] Furthermore, when viewed in the circumferential direction, baffle plate 100 has multiple (at least two) openings 131A formed on the same circumference. That is, multiple (at least two) openings 131A are formed on a circle concentric with inner ring portion 110. Similarly, multiple (at least two) openings 131B to 131M are formed on a circle concentric with inner ring portion 110.

[0051] By forming openings 131A to 131M in baffle 100, rigid portions 132A are formed between adjacent openings 131A on the same circumference. Similarly, rigid portions 132B to 132M are formed between adjacent openings 131B to 131M on the same circumference. Rigid portions 132A to 132M are more rigid and less prone to deformation than wall portions 133A to 133L, described later.

[0052] Furthermore, by forming openings 131A to 131M in baffle plate 100, arcuate walls 133A are formed between radially adjacent openings 131A and 131B. These walls 133A extend circumferentially concentric with inner ring portion 110. Similarly, arcuate walls 133B to 133L are formed between radially adjacent openings 131B to 131L and openings 131C to 131M, respectively. These walls 133B to 133L extend circumferentially concentric with inner ring portion 110. Walls 133A to 133L are less rigid than rigid portions 132A to 132M and are more susceptible to deformation.

[0053] It should be noted that, as described later Figure 4As shown, the cross-sectional shape of each wall portion 133A to 133L, when cut through a plane with the circumferential direction as the normal (a plane perpendicular to the direction in which the wall portions 133A to 133L extend), is a rectangle. Specifically, the cross-sectional shape of each wall portion 133A to 133L is longer in the longitudinal direction (the height direction, the thickness direction of the baffle 100) than in the transverse direction (the radial direction, the direction in which the wall portions 133A to 133L are arranged).

[0054] Furthermore, when viewed in the circumferential direction of the baffle 100, the plurality of openings 131A formed in the circumferential direction are arranged so as to be offset by half a pitch from the plurality of openings 131B formed in the circumferential direction. Similarly, when viewed in the circumferential direction of the baffle 100, the plurality of openings 131B to 131L formed in the circumferential direction are arranged so as to be offset by half a pitch from the plurality of openings 131C to 131M formed in the circumferential direction. In other words, when viewed in the circumferential direction of the baffle 100, the plurality of rigid portions 132A formed in the circumferential direction are arranged so as to be offset by half a pitch from the plurality of rigid portions 132B formed in the circumferential direction. Similarly, when viewed in the circumferential direction of the baffle 100, the plurality of rigid portions 132B to 132L formed in the circumferential direction are arranged so as to be offset by half a pitch from the plurality of rigid portions 132C to 132M formed in the circumferential direction. In other words, a row in which the rigid body portions 132A, 132C, 132E, 132G, 132I, 132K, and 132M are arranged in the radial direction and a row in which the rigid body portions 132B, 132D, 132F, 132H, 132J, and 132L are arranged in the radial direction are formed.

[0055] With this configuration, arcuate wall portion 133A is formed to connect rigid body portion 132A to rigid body portion 132B. Similarly, arcuate walls 133B to 133L are formed to connect rigid body portions 132B to 132L to rigid body portions 132C to 132M, respectively.

[0056] Furthermore, the circumferential lengths of the walls 133A to 133L, which are easily deformed portions (eg, circumferential length L1 of the wall 133A, circumferential length L2 of the wall 133L) are formed to be equal to each other (eg, L1 = L2).

[0057] In other words, the area surrounded by the rows of odd-numbered rigid body portions 132A, 132C, 132E, 132G, 132I, 132K, and 132M and the rows of even-numbered rigid body portions 132B, 132D, 132F, 132H, 132J, and 132L, counting from the radially inner side, is a deformation region in which the walls 133A to 133L, which are easily deformable areas, are arranged. This deformation region has a rectangular shape when the baffle 100 is viewed from above.

[0058] In other words, the circumferential widths of the rigid body portions 132A to 132M (e.g., circumferential width W1 of the rigid body portion 132B and circumferential width W2 of the rigid body portion 132L), which are relatively difficult to deform, are formed to increase in width radially outward (e.g., W1 < W2). In other words, by adjusting the circumferential widths of the rigid body portions 132A to 132M, the circumferential lengths of the wall portions 133A to 133L are made equal.

[0059] It should be noted that holes 134 may be formed in the rigid body portions 132A to 132M. The holes 134 may be shaped as arcuate slots. Providing holes 134 in the rigid body portions 132A to 132M also increases the opening ratio of the baffle 100 and reduces pressure loss.

[0060] In addition, if Figure 1 As shown, the inner ring portion 110 of the baffle 100 is fixed to the bottom plate 12 arranged from the center of the bottom of the chamber 10. On the other hand, the outer ring portion 120 of the baffle 100 is fixed to the shielding member 46 arranged from above the side wall of the chamber 10 via the cylindrical body 150. Therefore, due to factors such as stacking tolerances and thermal expansion of the chamber 10, there is a possibility that the height difference between the inner ring portion 110 and the outer ring portion 120 of the baffle 100 may occur.

[0061] Figure 3 1 is a diagram schematically illustrating deformation of the baffle 100 according to one embodiment when the inner ring portion 110 and the outer ring portion 120 are offset in the height direction. Figure 4 1 is an example of a cross-sectional view showing the cross-sectional shape and deformation direction of the wall portions 133A to 133L.

[0062] Since the inner ring portion 110 and the outer ring portion 120 are staggered by a deviation H in the height direction, the wall portions 133A to 133L are subjected to a deformation force in the torsional direction (in Figure 4 ), rather than being subjected to a deformation force in the height direction (indicated by the black arrow in Figure 4 Indicated by white arrows in the figure. Furthermore, each wall portion 133A-133L gradually twists and deforms, absorbing any height deviation H between the inner ring portion 110 and the outer ring portion 120. Furthermore, by making the circumferential lengths of the walls 133A-133L uniform, concentration of deformation during deformation of the walls 133A-133L can be suppressed. Therefore, even if a height deviation H occurs between the inner ring portion 110 and the outer ring portion 120, damage to the baffle 100 can be prevented.

[0063] Here, a baffle 100 according to one embodiment will be described in comparison with baffles 200 and 300 according to reference examples.

[0064] Figure 5 : is a partially enlarged plan view showing an example of a baffle 200 according to the first reference example. The baffle 200 according to the first reference example has an inner ring portion 210, an outer ring portion 220, and a connecting portion 230. An opening 231 (slot hole) extending in the radial direction is formed on the connecting portion 230. Therefore, a wall portion 232 extending in the radial direction is formed on the baffle 200. In such a structure, if a deviation H in the height direction occurs between the inner ring portion 210 and the outer ring portion 220 in the baffle 200, each wall portion 232 will be deformed due to the deviation H, and the deviation in the height direction borne by one wall portion 232 is larger than that of the baffle 100 according to one embodiment. In addition, the deformation direction of the wall portion 232 is the length direction of the wall portion 232 having a rectangular cross-section ( Figure 4 Therefore, due to the deviation in the height direction between the inner ring portion 210 and the outer ring portion 220, the baffle 200 according to the first reference example may be damaged.

[0065] Figure 6 This is a partially enlarged plan view showing an example of a baffle 300 according to the second reference example. The baffle 300 according to the second reference example includes an inner ring portion 310, an outer ring portion 320, and a connecting portion 330. The connecting portion 330 has an opening 331 extending circumferentially. Furthermore, a rigid portion 332 is formed between the openings 331. A wall portion 333 is formed to connect the rigid portions 332. In the baffle 300 according to the second reference example, the circumferential widths of the rigid portions 332 (e.g., circumferential width W3 on the inner ring side and circumferential width W4 on the outer ring side) are substantially equal. In other words, in the baffle 300 according to the second reference example, the circumferential lengths of the arcuate wall portions 333 (e.g., circumferential length L3 on the inner ring side and circumferential length L4 on the outer ring side) are shortened toward the inner ring and lengthened toward the outer ring.

[0066] Figure 7 Schematically shows the deformation of the baffle 300 according to the second reference example when the inner ring portion 310 and the outer ring portion 320 are offset in the height direction. Figure 6 The length of the wall portion 333 shown differs between the inner and outer sides, resulting in a shape that makes the outer wall portion 333 more easily deformable than the inner wall portion 333. Therefore, when the inner ring portion 310 and the outer ring portion 320 are offset in the height direction by a deviation H, the deformation of the outer wall portion 333 increases significantly. Consequently, the offset between the inner ring portion 310 and the outer ring portion 320 may cause damage to the baffle 300 according to the second reference example.

[0067] In contrast, in the barrier member 49 (the baffle 100 ) according to one embodiment, the concentration of deformation can be suppressed, and even if a height deviation H occurs between the inner ring portion 110 and the outer ring portion 120 , damage to the baffle 100 can be prevented.

[0068] Furthermore, the shape of the baffle member 49 (baffle plate 100) according to one embodiment reduces deformation of each wall portion 133A-133L. Therefore, even when using a material with higher rigidity than metal materials (e.g., aluminum), such as Si or SiC containing Si, the height deviation H between the inner ring portion 110 and the outer ring portion 120 can be absorbed, thereby suppressing damage to the baffle plate 100. Thus, the substrate processing apparatus 1 according to one embodiment can use Si, SiC, SiO2 containing Si, or other materials as the shield members 46, 47 and the baffle member 49. However, when using aluminum with a protective film (e.g., Y2O3) formed on the surface as the shield members 46, 47 and the baffle member 49, when plasma processing is performed on the substrate W, the element (Y) derived from the protective film generated by the plasma may affect the processing of the substrate W. In contrast, by using a material containing Si, such as Si, SiC, or SiO 2 , as the material of the shield members 46 , 47 and the barrier member 49 , the influence on the processing of the substrate W can be reduced.

[0069] Furthermore, in the barrier member 49 (dam plate 100 ) according to one embodiment, both inner and outer ends can be fixed, thereby easily ensuring electrical conduction between the barrier member 49 and the bottom plate 12 .

[0070] In the baffle member 49 (baffle 100) according to one embodiment, the cross-sectional shape of each wall portion 133A to 133L is preferably rectangular. This allows the walls 133A to 133L to easily deform in the torsional direction. Furthermore, the cross-sectional aspect ratio of each wall portion 133A to 133L is preferably greater than 1. This increases the radial width of the opening 131, thereby increasing the aperture ratio of the baffle 100 and reducing pressure loss.

[0071] Although the embodiments and the like of the substrate processing apparatus 1 have been described above, the present disclosure is not limited to the above-described embodiments and the like, and various modifications and improvements can be made within the scope of the gist of the present disclosure described in the claims.

Claims

1. A barrier component, comprising: Inner ring; an outer ring portion, disposed outside the inner ring portion; and A connecting portion connecting the inner ring portion and the outer ring portion, Wherein, the connecting portion has: a plurality of arc-shaped openings arranged in radial and circumferential directions and extending in the circumferential direction; a plurality of rigid parts formed between the adjacent openings on the same circumference; and a plurality of wall portions formed between the openings adjacent to each other in the radial direction and connecting one rigid body portion to another rigid body portion; The circumferential width of the rigid body portion becomes wider as it approaches the radial outer side. The circumferential length of one of the wall portions adjacent to each other in the radial direction is equal to the circumferential length of the other wall portion.

2. The barrier component according to claim 1, wherein: When viewed in the circumferential direction, the pitch of the openings arranged on the same circumference is staggered by half a pitch from the pitch of the openings arranged on the adjacent same circumference.

3. The barrier component according to claim 1 or 2, wherein: When the inner ring portion and the outer ring portion are offset in the height direction, the wall portion is deformed in the torsional direction.

4. The barrier component according to claim 1 or 2, wherein: The rigid body portion has a hole portion.

5. The barrier component according to claim 1 or 2, wherein: The cross-sectional shape of the wall portion is rectangular.

6. The barrier component according to claim 5, wherein: The aspect ratio of the cross-sectional shape of the wall portion is 1 or greater.

7. The barrier component according to claim 1 or 2, wherein: The inner ring portion, the outer ring portion, and the connecting portion are integrally formed.

8. The barrier component according to claim 1 or 2, wherein: The inner ring portion, the outer ring portion, and the connecting portion are formed of Si or SiC. 9 . A substrate processing apparatus comprising the barrier member according to claim 1 .

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