Component carrier and method for manufacturing a component carrier

Abstract

The present invention relates to a component carrier (1) which comprises a stack, a shielding structure (4) and components (5). The stack comprises at least one electrically conductive layer structure (2) and at least one electrically insulating layer structure (3). The components (5) have at least one pad (6) and are embedded in the stack and / or in the shielding structure (4). At least a part of at least one of the at least one electrically conductive layer structure (2) and the at least one pad (6) comprises copper which is in contact with the shielding structure (4).

Description

Field of the Invention

[0001] The present invention relates to a component carrier and a method for manufacturing a component carrier. Background Art

[0002] Conventional component carriers such as printed circuit boards include: a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure, and components having at least one pad and being embedded in the stack. High performance, low power consumption, as well as compact size and as light a weight as possible are generally the target requirements of modern electronic components. In recent years, remarkable developments have been achieved by embedding chips into printed circuit boards, especially in the automotive field.

[0003] However, it has been found that the combination of strong electric fields and high temperatures (above 120 °C or even above 155 °C) occurs especially in embedded power components and promotes the migration of electrically conductive materials. This migration is the transport of metal materials, which is caused by the gradual movement of ions in the conductor due to the momentum transfer between conduction electrons and the diffusion of metal atoms. This migration typically appears in the form of dendrites at the transition region between component pads and copper contacts and can lead to component short circuits and other failures. This migration occurs especially in applications with high DC density, such as in automotive applications, microelectronics, and related structures. With the minimization of the structural dimensions in components, the practical significance of this effect increases. In some cases, electrochemical migration is caused by chlorides in substrates such as FR4, but also by residues of chlorides in etching solutions. Summary of the Invention

[0004] It is an object of the present invention to provide a component carrier and a method for manufacturing a component carrier, by which failures caused by the migration of electrically conductive materials can be reduced. This object is achieved by the component carrier and the method for manufacturing a component carrier according to the present application.

[0005] According to an exemplary embodiment of the present invention, a component carrier includes a stack, a shielding structure, and components. The stack includes at least one electrically conductive layer structure and at least one electrically insulating layer structure. The components have at least one pad and are embedded in the stack and / or the shielding structure. At least a part of at least one of the at least one electrically conductive layer structure and at least one pad includes copper in contact with the shielding structure.

[0006] According to another exemplary embodiment of the present invention, a method of manufacturing a component carrier includes: forming a stack including at least one electrically conductive layer structure and at least one electrically insulating layer structure, forming a shielding structure connected to the stack, embedding a component having at least one pad into the stack and / or the shielding structure, and arranging at least a portion of the copper material of at least one of the at least one electrically conductive layer structure and / or at least one pad in contact with the shielding structure.

[0007] According to another exemplary embodiment of the present invention, a method of using the molding material of the above component carrier reduces or suppresses copper migration when conducting current through at least one of the at least one electrically conductive layer structure and / or at least one pad, particularly when conducting at least 1 ampere of current through at least one of the at least one electrically conductive layer structure and / or at least one pad. In particular, when the current has a current density of up to 100 kA / cm 2 the shielding structure can significantly suppress copper migration, preferably when the current has a current density of up to 200 kA / cm 2 the shielding structure can significantly suppress copper migration, and most preferably when the current has a current density greater than 200 kA / cm 2 value, the shielding structure can significantly suppress copper migration.

[0008] By means of a shielding structure that can be, for example, an impermeable chloride layer that is partially or completely connected to adjacent layers, migration of electrically conductive materials, particularly copper, can be prevented or significantly reduced. According to the present invention, the shielding structure can be applied as an insulating layer as close as possible to the pads, terminals or connections of the component. Ideally, the entire component can be covered by the shielding structure. The shielding structure can also be used as a barrier against EMI or other influencing interferences such as magnetic fields, radio frequencies, etc., and additionally protects the component from external influences such as mechanical stress, humidity, heat, etc.

[0009] It has also been found that substantially complete wetting of the filler by the surrounding shielding structure, for example a molding structure with a resin matrix, can play an important role in reducing / preventing copper migration.

[0010] Preferably, the shielding structure includes a non-conductive material, particularly a ceramic material. Non-limiting examples are SiC, SiN and SiO 2。Since the fewer or smaller the gaps are, the lower the risk of copper migration. Therefore, such a material should exhibit good adhesion between the resin matrix and the filler. Materials with a lower chlorine content, a higher glass transition temperature (Tg), and a lower relative humidity percentage (rH) are beneficial compared to FR-4. Preferably, the shield structure is a molded structure, i.e., the shield structure includes a molded material. The molded material may include a ceramic material. The higher the ceramic content, the more effectively the migration of the electrically conductive material is prevented. For example, an epoxy resin filled with SiO 2 can be used, where the concentration of the filler reaches 90% by weight. With these materials, a coefficient of expansion of less than 10 ppm / K and a glass transition temperature of greater than 200 °C can be achieved, so it is very suitable for common substrate materials and components.

[0011] Depending on the material, the shield structure 4 in the form of a layer, for example, also has a higher hardness compared to standard insulating materials such as FR4 or ABF. This means that the layers of the shield structure 4 can be very thin and still maintain warpage resistance. This is an excellent advantage for achieving (thin) layers with embedded components during the coreless process.

[0012] In addition to the ceramic material, the shield structure may include a hydrophobic material and / or a diffusion shield material, such as tantalum (Ta).

[0013] Detailed Description of Exemplary Embodiments

[0014] Hereinafter, other exemplary embodiments of the present invention will be described.

[0015] In an embodiment, the shield structure is a molded structure, which preferably includes a ceramic material. The shield structure with a ceramic material can be easily applied.

[0016] In an embodiment, the embedded component is a semiconductor chip, particularly a power semiconductor chip. Power semiconductor chips are generally vulnerable to the migration of electrically conductive materials, and the migration of the electrically conductive materials can be reduced or avoided by the shield structure.

[0017] In an embodiment, the shield structure directly contacts at least a part of at least one of the electrically conductive layer structure and / or at least one pad, particularly directly surrounds at least a part of at least one of the electrically conductive layer structure and / or at least one pad. In an embodiment, the component is partially or entirely embedded within the shield structure. Thus, the electrically conductive layer structure, the pad, and / or the component are well protected from the migration of the electrically conductive material.

[0018] In an embodiment, at least one electrically conductive layer structure includes at least one of a vertically through-connecting portion and a patterned electrically conductive layer, the vertically through-connecting portion being in particular a copper via, and the patterned electrically conductive layer being in particular a patterned copper foil. Thus, signals from the component can pass through the shielding structure.

[0019] In an embodiment, the shielding structure is vertically sandwiched between a first part of the stacked component and a second part of the stacked component.

[0020] In an embodiment, the component is received in a cavity of the stacked component, and the shielding structure closes the cavity. Thus, the shielding structure has a dual function of preventing migration of conductive materials and closing the cavity.

[0021] In an embodiment, the component is laterally surrounded by the stacked component and mounted on the shielding structure.

[0022] In an embodiment, except for the main surface of the component having at least one pad, the component is surrounded by the material of the stacked component, and the main surface of the component having at least one pad and at least one electrically conductive layer structure connected to the main surface are connected to the shielding structure.

[0023] In an embodiment, the component carrier includes at least one of the following features: the component carrier includes at least one component surface-mounted on and / or embedded in the component carrier, where in particular, the at least one component is selected from: electronic components, non-conductive inlays and / or conductive inlays, heat transfer units, light guiding elements, optical elements, bridges, energy harvesting units, active electronic components, passive electronic components, electronic chips, storage devices, filters, integrated circuits, signal processing components, power management components, optoelectronic interface elements, voltage converters, cryptographic components, transmitters and / or receivers, electromechanical transducers, actuators, microelectromechanical systems, microprocessors, capacitors, resistors, inductors, energy storage devices, switches, cameras, antennas, magnetic elements, additional component carriers, and logic chips; where at least one of the electrically conductive layer structures in the component carrier includes at least one of copper, aluminum, nickel, silver, gold, palladium, and tungsten, and any one of copper, aluminum, nickel, silver, gold, palladium, and tungsten may optionally be coated with a superconducting material, such as graphene; where the electrically insulating layer structure includes at least one of the following: resins, in particular reinforced or non-reinforced resins, such as epoxy resins or bismaleimide-triazine resins, FR-4, FR-5, cyanates, polyphenylene derivatives, glass, prepregs, polyimides, polyamides, liquid crystal polymers, epoxy-based laminated films, polytetrafluoroethylene, ceramics, and metal oxides; where the component carrier is shaped as a plate; where the component carrier is configured as one of a printed circuit board, a substrate, and an interposer; where the component carrier is configured as a laminated component carrier.

[0024] In the context of the present application, the term "component carrier" may in particular denote any support structure that is capable of accommodating one or more components thereon and / or in the support structure for providing mechanical support and / or electrical connection. In other words, the component carrier may be configured as a mechanical and / or electronic carrier for components. In particular, the component carrier may be one of a printed circuit board, an organic interposer, and an IC (integrated circuit) substrate. The component carrier may also be a hybrid board that combines different component carriers of the above-mentioned types of component carriers.

[0025] In an embodiment, the component carrier includes a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the mentioned electrically insulating layer structure and electrically conductive layer structure, which is formed in particular by applying mechanical pressure and / or thermal energy. The mentioned stack may provide a plate-shaped component carrier that can provide a large mounting surface for additional components and is still very thin and compact. The term "layer structure" may in particular denote a continuous layer, a patterned layer, or a plurality of non-continuous island-shaped elements in a common plane.

[0026] In an embodiment, the component carrier is shaped as a plate. This facilitates a compact design, where nevertheless the component carrier still provides a large substrate for the mounting components on the component carrier. In addition, in particular, bare chips, as an example of embedded electronic components, can be conveniently embedded in a thin plate such as a printed circuit board due to their small thickness.

[0027] In an embodiment, the component carrier is configured as one of a printed circuit board, a substrate (in particular an IC substrate), and an interposer.

[0028] In the context of the present application, the term "printed circuit board" (PCB) may in particular denote a plate-shaped component carrier formed by laminating a plurality of electrically conductive layer structures and a plurality of electrically insulating layer structures, for example by applying pressure and / or supplying thermal energy. As a preferred material for PCB technology, the electrically conductive layer structures are made of copper, while the electrically insulating layer structures may include resin and / or glass fiber, a so-called prepreg, or FR4 material. Through holes are formed through the laminate, for example in a way of laser drilling or mechanical drilling, and vias are formed by filling the through holes with an electrically conductive material (in particular copper) to form via connections, so that the respective electrically conductive layer structures can be connected to each other in a desired manner. In addition to one or more components that may be embedded in the printed circuit board, the printed circuit board is generally configured to accommodate one or more components on one surface or on opposite two surfaces of the plate-shaped printed circuit board. The one or more components may be connected to the respective main surfaces by soldering. The dielectric part of the PCB may include a resin with reinforcing fibers (such as glass fibers).

[0029] In the context of the present application, the term "substrate" can specifically denote a small component carrier. Relative to a PCB, the substrate can be a relatively small component carrier on which one or more components can be mounted, and which can serve as a connection medium between one or more chips and another PCB. For example, the substrate can have approximately the same dimensions as the components (in particular electronic components) to be mounted on the substrate (e.g., in the case of chip scale packages (CSP)). More specifically, the substrate can be understood as a carrier for electrical connectors or electrical networks and as a component carrier with a comparable but significantly higher density of lateral and / or vertical arrangements of connectors compared to a printed circuit board (PCB). Lateral connectors are, for example, conduction channels, while vertical connectors can be, for example, drilled holes. These lateral and / or vertical connectors are arranged within the substrate and can be used to provide electrical, thermal, and / or mechanical connections for accommodated or non-accommodated components (such as bare die), in particular IC chips, to a printed circuit board or an intermediate printed circuit board. Thus, the term "substrate" also includes "IC substrates". The dielectric portion of the substrate can include a resin having reinforcing particles (such as reinforcing spheres, in particular glass spheres).

[0030] The substrate or the interposer can include or be composed of the following: at least one layer of glass, silicon (Si), photoimageable or dry-etchable organic materials such as epoxy-based laminate materials (such as epoxy-based laminate films), or polymer compounds such as polyimide, polybenzoxazole, or benzocyclobutene.

[0031] In an embodiment, at least one electrical insulation layer structure includes at least one of the following: resin (such as reinforced or non-reinforced resin, for example epoxy resin or bismaleimide-triazine resin), cyanate ester, polyphenylene derivative, glass (in particular glass fiber, multi-layer glass, glassy material), prepreg (such as FR-4 or FR-5), polyimide, polyamide, liquid crystal polymer (LCP), epoxy-based laminate film, polytetrafluoroethylene (Teflon), ceramic, and metal oxide. Reinforcing structures made of, for example, glass (multi-layer glass), such as meshes, fibers, or spheres, can also be used. Although prepregs, in particular FR4, are usually preferred for rigid PCBs, other materials, in particular epoxy-based laminate films or photoimageable dielectric materials, can also be used. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymer, and / or cyanate ester resin, and / or cyanate ester resin, low-temperature co-fired ceramic (LTCC), or other low, very low, or ultra-low DK materials can be implemented as the electrical insulation layer structure in the component carrier.

[0032] In an embodiment, the at least one electrically conductive layer structure comprises at least one of copper, aluminum, nickel, silver, gold, palladium, and tungsten. Although copper is generally preferred, other materials or other types of coatings thereof are also possible, particularly coatings with superconducting materials such as graphene.

[0033] The at least one component may be selected from non-conductive inserts, conductive inserts (such as metal inserts, preferably comprising copper or aluminum), heat transfer units (such as heat pipes), light guiding elements (such as optical waveguides or optical conductor connectors), optical elements (such as lenses), electronic components, or combinations thereof. For example, the component may be an active electronic component, a passive electronic component, an electronic chip, a storage device (such as DRAM or other data memories), a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a light emitting diode, an optical coupler, a voltage converter (such as a DC / DC converter or an AC / DC converter), a cryptographic component, a transmitter and / or receiver, an electromechanical converter, a sensor, an actuator, a microelectromechanical system (MEMS), a microprocessor, a capacitor, a resistor, an inductor, a battery, a switch, a camera, an antenna, a logic chip, and an energy harvesting unit. However, other components may also be embedded in the component carrier. For example, magnetic elements may be used as components. Such magnetic elements may be permanent magnetic elements (such as ferromagnetic elements, antiferromagnetic elements, multiferroic elements, or ferrimagnetic elements, such as ferrite cores) or may be paramagnetic elements. However, the component may also be, for example, a substrate, an interposer, or another component carrier in a board-in-board configuration. The component may be surface-mounted on the component carrier and / or may be embedded inside the component carrier. In addition, other components may be used as components, particularly those that generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment.

[0034] In an embodiment, the component carrier is a laminated component carrier. In such an embodiment, the component carrier is a compound of a multi-layer structure that is stacked and connected together by applying pressure and / or heat.

[0035] After processing the internal layer structure of the component carrier, one or more additional electrically insulating layer structures and / or electrically conductive layer structures may be symmetrically or asymmetrically applied (particularly by lamination) to one major surface or the opposite two major surfaces of the processed layer structure. In other words, the stacking may continue until the desired number of layers is obtained.

[0036] After the formation of the stack of the electrically insulating layer structure and the electrically conductive layer structure is completed, surface treatment of the obtained layer structure or component carrier may be performed.

[0037] In particular, in terms of surface treatment, an electrically insulating solder resist can be applied to one major surface or to opposite major surfaces of the stack arrangement or the component carrier. For example, the solder resist can be formed over the entire major surface and subsequently patterned to expose one or more electrically conductive surface portions that will be used to electrically couple the component carrier to an electronic periphery. The surface portions of the component carrier that remain covered by the solder resist, in particular those containing copper, can be effectively protected against oxidation or corrosion.

[0038] In terms of surface treatment, a surface finish can also be selectively applied to the exposed electrically conductive surface portions of the component carrier. Such a surface finish can be an electrically conductive covering material on an exposed electrically conductive layer structure (such as pads, electrically conductive traces, etc., in particular including or consisting of copper) on the surface of the component carrier. If such an exposed electrically conductive layer structure is not protected, the exposed electrically conductive component carrier material (in particular copper) may oxidize, rendering the component carrier less reliable. The surface finish can then be formed, for example, as a joint between a surface-mounted component and the component carrier. The surface finish has the function of protecting the exposed electrically conductive layer structure (in particular the copper circuitry) and enabling the bonding process with one or more components, for example by soldering. Examples of suitable materials for the surface finish are organic solderability preservatives (OSP), electroless nickel immersion gold (ENIG), gold (in particular hard gold), electroless tin, nickel gold, nickel palladium, etc.

[0039] In accordance with examples of embodiments to be described below, the above-defined aspects and other aspects of the invention become apparent and are illustrated with reference to these examples of embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 A cross-sectional view of a component carrier in accordance with an exemplary embodiment of the invention is shown.

[0041] Figure 2 A cross-sectional view of a component carrier in accordance with an exemplary embodiment of the invention is shown.

[0042] Figure 3 A cross-sectional view of a component carrier in accordance with an exemplary embodiment of the invention is shown.

[0043] Figure 4 A cross-sectional view of a component carrier in accordance with an exemplary embodiment of the invention is shown.

[0044] Figure 5 A cross-sectional view of a component carrier in accordance with an exemplary embodiment of the invention is shown.

[0045] Figure 6Shows a cross-sectional view of an intermediate product during a method of manufacturing a component carrier according to an exemplary embodiment of the present invention. Detailed Description

[0046] The illustrations in the drawings are schematic. In different drawings, similar or identical elements are provided with the same reference numerals.

[0047] Figure 1 Shows a cross-sectional view of a component carrier 1 according to an exemplary embodiment of the present invention. The component carrier 1 is formed as a plate. The component carrier 1 can be configured as one of a printed circuit board, a substrate, and an interposer. The component carrier 1 can be configured as a laminated component carrier.

[0048] The component carrier 1 includes a stack having an electrically conductive layer structure 2 and an electrically insulating layer structure 3.

[0049] The electrically conductive layer structure 2 of the component carrier includes at least one of copper, aluminum, nickel, silver, gold, palladium, and tungsten, and any of the mentioned materials is optionally coated with a superconducting material such as graphene.

[0050] The electrically conductive layer structure 2 includes vertically through-connecting portions 7 and a patterned electrically conductive layer 8. The vertically through-connecting portions 7 are particularly copper vias, and the patterned electrically conductive layer 8 is particularly a patterned copper foil.

[0051] The electrically insulating layer structure 3 includes at least one of the following: resin, particularly reinforced resin or non-reinforced resin, such as epoxy resin or bismaleimide-triazine resin, FR-4, FR-5, cyanate ester, polyphenylene derivative, glass, prepreg, polyimide, polyamide, liquid crystal polymer, epoxy-based laminated film, polytetrafluoroethylene, ceramic, and metal oxide.

[0052] The component carrier 1 includes a shielding structure 4 and a component 5 having pads 6, and the component 5 is embedded in the stack and the shielding structure 4. In Figure 1 the embodiment, the shielding structure 4 is a molded structure, and the material of the shielding structure 4 includes a ceramic material such as SiO 2 .

[0053] The shielding structure 4 is used to inhibit copper migration when conducting current through at least one of the electrical conduction layer structure 2 and / or the pad 6, particularly when conducting a current of 1 ampere through at least one of the electrical conduction layer structure 2 and / or the pad 6. Due to the shielding structure 4, for example, the shielding structure can be an impermeable chloride layer partially or entirely applied on the lower electrical insulation layer structure 3, so that the migration of the electrical conduction material can be prevented or significantly reduced, particularly the migration of copper. The shielding structure 4 is applied as close as possible to the insulation layer of the pad 6. The shielding structure 4 can also be used as a barrier against EMI or other influencing interferences such as magnetism, radio frequency, etc., and additionally protects the component 5.

[0054] It has also been found that substantially completely wetting the filler by the surrounding shielding structure 4, for example, a molded structure with a resin matrix, can play an important role in reducing / preventing copper migration. The material of the shielding structure 4 is selected to minimize the diffusion path through the shielding structure. Since the fewer or smaller the gaps, the lower the risk of copper migration, this material should exhibit good adhesion between the resin matrix and the filler. Compared with FR-4, materials with a lower chlorine content, a higher glass transition temperature (Tg), and a lower relative humidity percentage (rH) are beneficial. This material should also not contain many voids, but should have a lower diffusion coefficient and / or a higher density, for example, having a diffusion coefficient lower than that which FR-4 may have at 1 μm 2 s -1 and a density lower than 1.850 g / cm 3 of FR-4. Additionally, the layer thickness of the shielding structure 4 is adjusted to reduce or inhibit (copper) migration. The shielding structure 4 can be a shielding film structure or a shielding film microstructure. The shielding film (micro) structure can be used as a migration buffer zone.

[0055] Furthermore, the diffusion coefficient of the shielding structure 4 should be as small as possible, for example, less than 15 m 2 / s - 13 m 2 / s, preferably less than 10 m 2 / s - 13 m 2 / s, more preferably less than 5 m 2 / s - 13 m 2 / s, for example, to achieve diffusion shielding.

[0056] Preferably, the shielding structure 4 includes a ceramic material. Preferably, the shielding structure 4 is a molded structure, that is, the shielding structure 4 includes a molded material. The molded material can be formed from a resin matrix containing a ceramic material. The higher the ceramic content of the shielding structure 4, the more effectively the migration of the electrical conduction material can be prevented. For example, SiO 2Epoxy resin, where the concentration of the filler reaches 90% by weight. Through these materials, a coefficient of expansion of less than 10 ppm / K and a glass transition temperature of greater than 200 °C can be achieved, so it is very suitable for common substrate materials and component 5.

[0057] According to the material, the layered shielding structure 4 also has higher hardness compared to standard insulating materials such as FR4 or ABF, which means that the layers of the shielding structure 4 can be very thin and still maintain anti-warpage properties.

[0058] In addition to ceramic materials, the shielding structure 4 can include hydrophobic materials and / or diffusion shielding materials, such as tantalum (Ta).

[0059] Component 5 is embedded in the shielding structure 4 in a face-up manner, which means that the pads 6 of component 5 are located at the upper main surface of component 5. A part of the conductive layer structure 2 and a part of each pad 6 include copper that is in contact with the shielding structure 4. The shielding structure 4 directly contacts a part of the conductive layer structure 2 and a part of the pads 6. In particular, the shielding structure 4 directly surrounds a part of the conductive layer structure 2 and a part of the pads 6. More specifically, the shielding structure 4 directly surrounds the vertical through-connection portion 7 and directly contacts the patterned conductive layer 8.

[0060] Component 5 is first surface-mounted on the lower electrical insulation layer structure 3 and then embedded in the shielding structure 4 of the component carrier 1. After the vertical through-connection portion 7 and the patterned conductive layer 8 are respectively formed in the shielding structure 4 and formed on the shielding structure 4, the upper electrical insulation layer structure 3 is applied on the patterned conductive layer 8. The patterned conductive layer 8 and the upper electrical insulation layer structure 3 form the first part 9 of the stacked component. The lower electrical insulation layer structure 3 forms the second part 10 of the stacked component. Therefore, the shielding structure 4 is vertically sandwiched between the first part 9 of the stacked component and the second part 10 of the stacked component.

[0061] The embedded component 5 can be a semiconductor chip, especially a power semiconductor chip. Even when power semiconductor chips are usually vulnerable to electron migration, electron migration can be prevented by the shielding structure 4.

[0062] Alternatively, component 5 can be a non-conductive inlay and / or a conductive inlay, a heat transfer unit, an optical guiding element, an energy harvesting unit, an active electronic component, a passive electronic component, a storage device, a filter, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter, a cryptographic component, a transmitter and / or a receiver, an electromechanical transducer, an actuator, a microelectromechanical system, a microprocessor, a capacitor, a resistor, an inductor, an energy storage device, a switch, a camera, an antenna, a magnetic element, another component carrier, and a logic chip.

[0063] Figure 2 A cross-sectional view of a component carrier 1 according to an exemplary embodiment of the present invention is shown. Except for the following main differences, the component carrier 1 according to Figure 2 the embodiment of Figure 1 is similar to the component carrier 1 according to

[0064] The component 5 is received in a cavity 11 of a stack, and a shielding structure 4 closes the cavity 11. The cavity 11 is formed within an electrically insulating layer structure 3 of the stack. In Figure 2 the embodiment of, the shielding structure 4 is a molded structure and fills the cavity 11. Alternatively, the cavity 11 may be completely occupied by the component 5 such that the cavity 11 is not filled by the shielding structure 4 at the lateral sides of the component 5. Alternatively, the cavity 11 is not filled by the shielding structure 4 only at one lateral side of the component 5 or only at some lateral sides of the component 5. In these cases, where the cavity 11 is not completely filled only by the component 5, the cavity 11 is not filled by the shielding structure 4 at all lateral sides of the component 5.

[0065] In addition to a main surface having at least one pad 6, the component 5 is surrounded by the material of the stack at its lateral sides, and the main surface of the component 5 having at least one pad 6 and an electrically conductive layer structure 2 connected to the main surface are connected to the shielding structure 4.

[0066] Figure 3 A cross-sectional view of a component carrier 1 according to an exemplary embodiment of the present invention is shown. Except for the following main differences, the component carrier 1 according to Figure 3 the embodiment of Figure 1 is similar to the component carrier 1 according to

[0067] The component 5 is completely embedded within the shielding structure 4. Thereby, all sides of the component 5 are connected to the shielding structure 4.

[0068] The component 5 is embedded within the shielding structure 4 in a face-down manner, which means that the pads 6 of the component 5 are located at the bottom main surface of the component 5. Of course, alternatively, the component 5 may be embedded within the shielding structure 4 in a face-up manner, which means that the pads 6 of the component 5 are located at the top main surface of the component 5.

[0069] The shielding structure 4 includes an upper shielding structure 4a and a lower shielding structure 4b. The upper shielding structure 4a and the lower shielding structure 4b are molded structures. Alternatively, one of the upper shielding structure 4a and the lower shielding structure 4b can be replaced by a conventional electrically insulating layer structure 3 that is molded or laminated and has no shielding effect. In the case of the component 5, this has a more sensitive side that needs to be protected against copper migration and another side that does not need protection. This sensitivity may also depend on the L / S factor (line / spacing), which means that the smaller the L / S factor, the higher the risk caused by copper migration. The laminated structure is usually not molded but is attached to an adjacent structure of the stack under the application of heat and pressure.

[0070] The transition portion between the upper shielding structure 4a and the lower shielding structure 4b is located at the main side of the component 5 where the pads 6 are arranged.

[0071] A part of the electrically conductive layer structure 2 and a part of each pad 6 include copper that contacts the shielding structure 4. The upper shielding structure 4a directly contacts a part of the pad 6, particularly directly around a part of the pad 6, and the lower shielding structure 4b directly contacts a part of the vertical through-connection 7, particularly directly around a part of the vertical through-connection 7, and the lower shielding structure 4b directly contacts a part of the patterned electrically conductive layer 8.

[0072] The component 5 can be first surface-mounted on the lower shielding structure 4b and then embedded in the upper shielding structure 4a, or the component 5 can be first embedded in the upper shielding structure 4a and then surface-mounted on the lower shielding structure 4b. In the case where the component 5 can be first embedded in the upper shielding structure 4a and then surface-mounted on the lower shielding structure 4b, it is appropriate to use a sacrificial layer (such as a tape) at the bottom of the cavity 11 in the electrically insulating layer structure 3. The cavity 11 can be filled or molded with the material of the upper shielding structure 4a, and then the sacrificial layer is peeled off to add the lower shielding structure 4b.

[0073] The component 5 is laterally surrounded by the stack, particularly by the electrically insulating layer structure 3, and is mounted on the shielding structure 4, here on the lower shielding structure 4b. The cavity 11 is formed by the electrically insulating layer structure 3 of the stack and the lower shielding structure 4b. The component 5 and its pads 6 are completely surrounded or encapsulated by the shielding structure 4.

[0074] In Figure 3 the embodiment, the upper shielding structure 4a is a molded structure and fills the cavity 11. Alternatively, the cavity 11 can be partially or fully occupied by the component 5 such that the cavity 11 is not filled by the upper shielding structure 4a at the lateral sides of the component 5.

[0075] Figure 4Shows a cross-sectional view of a component carrier 1 according to an exemplary embodiment of the present invention. Except for the following main differences, the component carrier 1 according to Figure 4 is similar to the component carrier 1 according to Figure 3 in terms of the embodiment.

[0076] The pad 6 of the component 5 is in direct contact with the electrically conductive layer structure 2, which means that there is no vertical through-connection 7 between the patterned electrically conductive layers 8.

[0077] The shielding structure 4 includes an upper shielding structure 4a and a lower shielding structure 4b. In Figure 4 the embodiment, the lower shielding structure 4b is a molded structure and fills the cavity 11. Alternatively, the cavity 11 can be completely occupied by the component 5 such that the cavity 11 is not filled by the lower shielding structure 4b at the lateral sides of the component 5. The upper shielding structure 4a can also be a molded structure.

[0078] Alternatively, one of the upper shielding structure 4a and the lower shielding structure 4b can be replaced by a conventional electrically insulating layer structure 3 that has no blocking effect and can be molded or laminated. A laminated structure is generally not molded but is attached to adjacent structures of a stack under the application of heat and pressure.

[0079] The transition between the upper shielding structure 4a and the lower shielding structure 4b is located at the main side of the component 5 opposite to the main side where the pad 6 is arranged.

[0080] Figure 5 Shows a cross-sectional view of a component carrier 1 according to an exemplary embodiment of the present invention. Except for the following main differences, the component carrier 1 according to Figure 5 is similar to the component carrier 1 according to Figure 4 in terms of the embodiment.

[0081] Some pads 6 of the component 5 are in direct contact with the electrically conductive layer structure 2, which means that there is no vertical through-connection 7 between the patterned electrically conductive layers 8. Another pad 6 is connected to the vertical through-connection 7, which is in particular a copper via.

[0082] The component carrier 1 does not include a cavity 11.

[0083] The component 5 is embedded in a conventional electrically insulating layer structure 3 that has no shielding effect and can be molded or laminated. The shielding structure 4 is arranged below the component 5.

[0084] The shielding structure 4 starts from the side of the component 5 where the pad 6 is arranged and extends downward.

[0085] In a modification, the electrically insulating layer structure 3 can be replaced by the shielding structure 4, in particular by a molded structure.

[0086] Figure 6 Shows a cross-sectional view of an intermediate product during the method of manufacturing a component carrier 1 according to an exemplary embodiment of the present invention. Figure 6 The same reference numerals in Figures 1 to 5 denote the same or similar elements of the embodiments in

[0087] In Figure 6 the embodiment of

[0088] a method of manufacturing a component carrier 1, a temporary carrier 20 is used, the temporary carrier 20 including a core 21 and an electrically conductive layer structure 22 located at each main surface of the core 21. A prefabricated temporary carrier 20 can be used.

[0089] The method of manufacturing the component carrier 1 includes the following steps: symmetrically forming an electrically insulating layer structure 3 and an electrically conductive layer structure 2 of a stack of the component carrier 1 on two sides of the temporary carrier 20. Thereby, the efficiency and productivity of the manufacturing method are improved. Alternatively, the electrically insulating layer structure 3 and the electrically conductive layer structure 2 of the stack can be asymmetrically formed on only one side of the temporary carrier 20.

[0090] After forming the stack on the temporary carrier 20, the stack is released / removed from both sides of the temporary carrier 20. The release process can be facilitated by adding a release layer on the temporary carrier 20 (sacrificial structure 20). The component carrier 1 having these stacks is referred to as a coreless component carrier 1, and the coreless component carrier 1 is dimensionally stable, stress-resistant, and / or exhibits low warpage despite having a relatively small thickness. Depending on the material, the shielding structure 4 in the form of a layer also has a higher hardness compared to standard insulating materials such as FR4 or ABF, which means that the layers of the shielding structure 4 can be very thin and still retain warpage resistance. This is an excellent advantage for achieving (thin) layers with the embedded component 5 in such a coreless process.

[0091] It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "one" does not exclude a plurality. Moreover, elements described in connection with different embodiments can be combined.

[0092] It should also be noted that the reference signs in the claims should not be construed as limiting the scope of the claims.

[0093] The implementation of the present invention is not limited to the preferred embodiments shown in the drawings and described above. On the contrary, it is also feasible to use the solutions shown and various variants according to the principles of the present invention, and various variants can be made even in the case of fundamentally different embodiments.

Claims

1. A component carrier (1), wherein, the component carrier (1) comprises: a stack, the stack comprising at least one electrically conductive layer structure (2) and at least one electrically insulating layer structure (3); a shielding structure (4); a component (5), the component (5) having at least one pad (6), and the component (5) being embedded in the stack and / or the shielding structure (4); wherein at least a part of at least one of the at least one electrically conductive layer structure (2) and the at least one pad (6) comprises copper in contact with the shielding structure (4), wherein the shielding structure (4) is an impermeable chloride layer, and the shielding structure further comprises a hydrophobic material and / or a diffusion shielding material.

2. The component carrier (1) according to claim 1, wherein, the embedded component (5) is a semiconductor chip.

3. The component carrier (1) according to claim 1, wherein, the shielding structure (4) directly contacts at least a part of one of the at least one electrically conductive layer structure (2) and / or the at least one pad (6).

4. The component carrier (1) according to claim 1, wherein, the component (5) is partially or fully embedded within the shielding structure (4).

5. The component carrier (1) according to claim 1, wherein, the at least one electrically conductive layer structure (2) comprises at least one of a vertically through-connected portion (7) and a patterned electrically conductive layer (8).

6. The component carrier (1) according to claim 1, wherein, the shielding structure (4) is vertically sandwiched between a first part (9) and a second part (10) of the stack.

7. The component carrier (1) according to claim 1, wherein, the component (5) is received in a cavity (11) of the stack, and the shielding structure (4) closes the cavity (11).

8. The component carrier (1) according to claim 1, wherein, the component (5) is laterally surrounded by the stack and the component (5) is mounted on the shielding structure (4).

9. The component carrier (1) according to claim 1, wherein, except for a main surface of the component (5) having the at least one pad (6), the component (5) is surrounded by the material of the stack, and the main surface of the component (5) having the at least one pad (6) and the at least one electrically conductive layer structure (2) connected to the main surface are connected to the shielding structure (4).

10. The component carrier (1) according to claim 1, comprising at least one of the following features: the component carrier (1) comprises at least one component (5) surface-mounted on and / or embedded in the component carrier (1); wherein, At least one of the electrically conductive layer structures (2) of the component carrier includes at least one of copper, aluminum, nickel, silver, gold, palladium, and tungsten, and any one of the mentioned copper, aluminum, nickel, silver, gold, palladium, and tungsten is coated with a superconducting material; wherein, the electrically insulating layer structure (3) includes at least one of the following: resin, glass, prepreg, ceramic, and metal oxide; wherein, the component carrier (1) is formed as a plate; wherein, the component carrier (1) is configured as a laminated component carrier.

11. The component carrier (1) according to claim 10, wherein, the superconducting material is graphene.

12. The component carrier (1) according to claim 1, wherein, the electrically insulating layer structure (3) includes at least one of the following: cyanate ester, polyphenylene derivative, polyimide, polyamide, liquid crystal polymer, epoxy-based laminate film, polytetrafluoroethylene.

13. The component carrier (1) according to claim 1, wherein, the electrically insulating layer structure (3) includes FR-4 or FR-5.

14. The component carrier (1) according to claim 1, wherein, the component carrier (1) is configured as a printed circuit board.

15. The component carrier (1) according to claim 1, wherein, the component carrier (1) is configured as a substrate.

16. The component carrier (1) according to claim 1, wherein, the component carrier (1) is configured as an interposer.

17. A method of manufacturing a component carrier (1), wherein, the method includes: forming a stack including at least one electrically conductive layer structure (2) and at least one electrically insulating layer structure (3); forming a shielding structure (4) connected to the stack; embedding a component (5) having at least one pad (6) into the stack and / or the shielding structure (4); and arranging at least a part of the copper material of at least one of the at least one electrically conductive layer structure (2) and / or the at least one pad (6) to be in contact with the shielding structure (4), wherein the shielding structure (4) is an impermeable chloride layer, and the shielding structure further includes a hydrophobic material and / or a diffusion shielding material.

18. A method of reducing or suppressing copper migration when conducting current through at least one of the at least one electrically conductive layer structure (2) and / or the at least one pad (6) by using the shielding structure of the component carrier (1) according to claim 1.

19. The method according to claim 18, wherein, In the case where the current has a current density of up to 100 kA / cm 2 the shielding member structure (4) significantly suppresses copper migration.

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