Liquid processing device, liquid processing method, and computer-readable storage medium

Abstract

The present invention provides a liquid processing device, a liquid processing method and a computer-readable storage medium. An example of a liquid processing device includes: a substrate holding portion configured to hold a substrate; a processing liquid supply portion configured to supply a processing liquid to the surface of the substrate; a gas supply portion configured to supply a gas to the surface of the substrate; and a control portion. The gas supply portion includes a diffusion nozzle, which is formed with a plurality of nozzles extending at different angles relative to the surface of the substrate. In a state where the surface of the substrate is supplied with processing liquid, the control portion controls the gas supply portion so that gas is sprayed from the diffusion nozzle to an area on the surface of the substrate that includes at least the central portion. According to the present invention, the in-plane temperature distribution of the substrate can be controlled more uniformly.

Description

Technical Field

[0001] The present disclosure relates to a liquid processing device, a liquid processing method, and a computer-readable storage medium. Background Art

[0002] Patent Document 1 discloses a developing device configured to develop a resist film formed on the surface of a substrate by supplying a developer to the surface of the substrate. The developing device includes: a blower that blows air regulated to a predetermined temperature from above toward the substrate; and a temperature regulator that maintains a chuck device and a developer supply pipe at a predetermined temperature by circulating temperature-controlled water regulated to the predetermined temperature.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2004-274028. Summary of the Invention

[0006] Problems to be solved by the invention

[0007] In the developing device of Patent Document 1, the substrate temperature during development is controlled to a constant temperature using a blower and a temperature regulator. However, since heat dissipation is easily promoted from the peripheral edge of the substrate, this control method can also cause temperature differences within the substrate surface. Consequently, the development speed varies within the substrate surface, potentially causing uneven line widths in the resist pattern within the substrate surface.

[0008] Therefore, the present disclosure describes a liquid processing apparatus, a liquid processing method, and a computer-readable storage medium that can more uniformly control the in-plane temperature distribution of a substrate.

[0009] Technical solutions to solve problems

[0010] An example of a liquid processing apparatus includes: a substrate holding portion configured to hold a substrate; a processing liquid supply portion configured to supply a processing liquid to a surface of the substrate; a gas supply portion configured to supply a gas to the surface of the substrate; and a control portion. The gas supply portion includes a diffusion nozzle having a plurality of nozzles extending at different angles relative to the surface of the substrate. With the processing liquid supplied to the surface of the substrate, the control portion controls the gas supply portion so that the gas is ejected from the diffusion nozzle toward a region of the substrate surface, at least including a central portion.

[0011] Effects of the Invention

[0012] According to the liquid processing apparatus, liquid processing method, and computer-readable storage medium disclosed herein, the in-plane temperature distribution of a substrate can be controlled more uniformly. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a perspective view showing an example of a substrate processing system.

[0014] Figure 2 It is schematically represented Figure 1 Side view of the interior of a substrate processing system.

[0015] Figure 3 It is schematically represented Figure 1 A top view of the interior of a substrate processing system.

[0016] Figure 4 It is a side view schematically showing an example of a liquid processing unit.

[0017] Figure 5 It is a side view showing an example of a nozzle unit.

[0018] Figure 6 This is a block diagram showing an example of a controller.

[0019] Figure 7 This is a schematic diagram showing an example of the hardware configuration of the controller.

[0020] Figure 8 This is a flowchart for explaining an example of a procedure for performing liquid processing on a substrate.

[0021] Figure 9 A diagram for explaining a liquid processing method for a substrate.

[0022] Figure 10 A diagram for explaining a liquid processing method for a substrate.

[0023] Figure 11 It is a side view showing another example of the nozzle unit.

[0024] Figure 12 It is a side view showing another example of the operation of the nozzle unit.

[0025] Figure 13 is a graph showing the in-plane line width distribution of a resist pattern formed on the surface of a substrate, wherein Figure 13 (a) shows the in-plane line width distribution of Example 1, Figure 13 (b) shows the in-plane line width distribution of Example 2.

[0026] Figure 14 is a diagram showing the in-plane line width distribution of a resist pattern formed on the surface of a substrate. Figure 14 (a) shows the in-plane line width distribution of Example 3, Figure 14 (b) shows the in-plane line width distribution of the comparative example.

[0027] Figure 15 This is a graph showing the deviation (relative to 3σ) of the in-plane line width distribution of each of Examples 1 to 3 and Comparative Example.

[0028] Explanation of symbols

[0029] 1…substrate processing system, 2…coating and developing device (liquid processing device), 20…substrate holding part, 30…supply part (processing liquid supply part), 31…supply mechanism, 40…supply part (gas supply part, cleaning liquid supply part, drying gas supply part), 41A~41C…supply mechanism, 43…nozzle unit, 43a…nozzle, 43c…nozzle (diffusion nozzle), Ctr…controller (control part), G1…cooling gas (gas), G2…drying gas, H…housing, L1…processing liquid, L2…processing liquid (cleaning liquid), PM4…processing module, RM…storage medium, U1…liquid processing unit (liquid processing device), V1, V2…exhaust part, W…substrate, Wa…surface. DETAILED DESCRIPTION

[0030] In the following description, the same elements or elements having the same function are denoted by the same reference numerals, and repeated descriptions are omitted.

[0031] [Substrate processing system]

[0032] First, refer to Figures 1 to 3 The following describes the configuration of the substrate processing system 1. The substrate processing system 1 includes a coating and developing device 2 (liquid processing device), an exposure device 3, and a controller Ctr (control unit).

[0033] The exposure device 3 is configured to receive and deliver the substrate W to the coating and developing device 2, and to form a coating on the surface Wa of the substrate W (see FIG. Figure 4 The exposure device 3 can selectively irradiate the exposure target portion of the resist film R with energy beams by, for example, liquid immersion exposure or the like.

[0034] Energy rays may include, for example, ionizing radiation and non-ionizing radiation. Ionizing radiation is radiation with sufficient energy to ionize atoms or molecules. Examples of ionizing radiation include extreme ultraviolet (EUV), electron beams, ion beams, X-rays, α-rays, β-rays, γ-rays, heavy particle beams, and proton beams. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Examples of non-ionizing radiation include g-rays, i-rays, KrF excimer lasers, ArF excimer lasers, and F2 excimer lasers.

[0035] The coating and developing device 2 is configured to form a resist film R on the surface Wa of the substrate W before the exposure process by the exposure device 3. The coating and developing device 2 is configured to develop the resist film R after the exposure process.

[0036] The substrate W may be in the form of a circular sheet or a non-circular sheet such as a polygon. The substrate W may also have a partially cutout portion. The cutout portion may be, for example, a notch (a U-shaped or V-shaped groove) or a straight portion extending in a straight line (a so-called orientation line). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the substrate W may be, for example, approximately 200 mm to 450 mm.

[0037] like Figures 1 to 3 As shown, the coating and developing device 2 includes a carrier assembly 4, a processing assembly 5 and an interface assembly 6. The carrier assembly 4, the processing assembly 5 and the interface assembly 6 are arranged in a horizontal direction.

[0038] The carrier assembly 4 includes a carrier station 12 and a loading / unloading unit 13. The carrier station 12 supports a plurality of carriers 11. A carrier 11 stores at least one substrate W in a sealed state. A door (not shown) for loading and unloading substrates W is provided on a side 11a of the carrier 11. The carrier 11 is detachably mounted on the carrier station 12, with the side 11a facing the loading / unloading unit 13.

[0039] The feeding and discharging section 13 is located between the carrier station 12 and the processing assembly 5. The feeding and discharging section 13 is as follows: Figure 1 and Figure 3 As shown, there are multiple opening and closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening and closing door of the carrier 11 faces the opening and closing door 13a. By opening the opening and closing door 13a and the opening and closing door of the side 11a at the same time, the inside of the carrier 11 and the inside of the delivery unit 13 are connected. Figure 2 and Figure 3 As shown, the transport arm A1 is built into the transport unit 13. The transport arm A1 is configured to take out the substrate W from the carrier 11 and deliver it to the processing module 5, and to receive the substrate W from the processing module 5 and return it to the carrier 11.

[0040] like Figure 2 and Figure 3 As shown, the processing component 5 includes processing modules PM1-PM4.

[0041] The processing module PM1 is configured to form a bottom layer film on the surface of the substrate W, and is also called a BCT module. Figure 3As shown, the process module PM1 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A2 configured to transport a substrate W therebetween. The liquid processing unit U1 of the process module PM1 can be configured, for example, to apply a coating liquid for forming an underlying film to the substrate W. The thermal processing unit U2 of the process module PM1 can be configured, for example, to perform a heat treatment for curing the coating film formed on the substrate W by the liquid processing unit U1 to form an underlying film. The underlying film can be, for example, an anti-reflection (SiARC) film.

[0042] The processing module PM2 is configured to form an intermediate film (hard mask) on the underlying film and is also referred to as an HMCT module. The processing module PM2 includes a liquid processing unit U1, a heat treatment unit U2, and a transport arm A3 configured to transport a substrate W thereto. The liquid processing unit U1 of the processing module PM2 can, for example, be configured to apply a coating liquid for forming an intermediate film to the substrate W. The heat treatment unit U2 of the processing module PM2 can, for example, be configured to perform a heat treatment for curing the coating film formed on the substrate W by the liquid processing unit U1 to form an intermediate film. Examples of the intermediate film include an SOC (Spin On Carbon) film and an amorphous carbon film.

[0043] The processing module PM3 is configured to form a thermosetting and photosensitive resist film R on an intermediate film, and is also referred to as a COT module. The processing module PM3 includes a liquid processing unit U1, a heat treatment unit U2, and a transport arm A4 configured to transport a substrate W thereto. The liquid processing unit U1 of the processing module PM3 can, for example, be configured to apply a coating liquid (resist liquid) for forming a resist film to the substrate W. The heat treatment unit U2 of the processing module PM3 can, for example, be configured to perform a heat treatment (PAB: Pre Applied Bake) for curing the coating film formed on the substrate W by the liquid processing unit U1 to form the resist film R.

[0044] The resist material contained in the resist solution can be either a positive-type resist material or a negative-type resist material. A positive-type resist material dissolves in the exposed areas of the pattern, leaving the unexposed areas (light-shielded areas) exposed. A negative-type resist material dissolves in the unexposed areas (light-shielded areas), leaving the exposed areas exposed.

[0045] The processing module PM4 is configured to perform a development process on the exposed resist film and is also referred to as a DEV module. The processing module PM4 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A5 configured to transport a substrate W thereto. The liquid processing unit U1 of the processing module PM4 can, for example, be configured to partially remove the resist film R to form a resist pattern (not shown). The thermal processing unit U2 of the processing module PM4 can, for example, be configured to perform a pre-development heat treatment (PEB: Post Exposure Bake) or a post-development heat treatment (PB: Post Bake).

[0046] like Figure 2 and Figure 3 As shown, the processing assembly 5 includes a shelf unit 14 located adjacent to the carrier assembly 4. The shelf unit 14 extends vertically and includes a plurality of vertically arranged shelves. A transport arm A6 is disposed adjacent to the shelf unit 14. The transport arm A6 is configured to lift and lower substrates W between shelves of the shelf unit 14.

[0047] The processing assembly 5 includes a shelf unit 15 located near the interface assembly 6. The shelf unit 15 extends in the up-down direction and includes a plurality of compartments arranged in the up-down direction.

[0048] The interface unit 6 includes a transport arm A7 connected to the exposure device 3. The transport arm A7 is configured to take out substrates W from the shelf unit 15 and deliver them to the exposure device 3, and to receive substrates W from the exposure device 3 and return them to the shelf unit 15.

[0049] The controller Ctr is configured to partially or entirely control the coating and developing device 2. The controller Ctr will be described in detail later. The controller Ctr can be configured to send and receive signals with the controller of the exposure device 3, thereby controlling the substrate processing system 1 as a whole by cooperating with the controller of the exposure device 3.

[0050] [Liquid processing unit]

[0051] Next, refer to Figure 4 and Figure 5 , the liquid processing unit U1 (liquid processing device) of the processing module PM4 is further described in detail. Figure 4As shown, the liquid processing unit U1 includes a substrate holding portion 20, a supply portion 30 (processing liquid supply portion), a supply portion 40 (gas supply portion, cleaning liquid supply portion, dry gas supply portion), a cover component 50 and a blower B in a shell H. An exhaust portion V1 is provided at the lower portion of the shell H, which is configured to exhaust the gas in the shell H by operating based on a signal from a controller Ctr. The exhaust portion V1 can be, for example, a throttle valve that can adjust the exhaust volume according to the opening. By using the exhaust portion V1 to adjust the exhaust volume from the shell H, the temperature, pressure, humidity, etc. in the shell H can be controlled. The exhaust portion V1 can also be controlled to always exhaust the shell H during the liquid processing of the substrate W.

[0052] The substrate holding portion 20 includes a rotating portion 21, a transmission shaft 22, and a holding portion 23. The rotating portion 21 is configured to operate based on an action signal from a controller Ctr to rotate the transmission shaft 22. The rotating portion 21 is a power source such as an electric motor. The holding portion 23 is provided at the front end portion of the transmission shaft 22. The substrate W can be arranged on the holding portion 23. The holding portion 23 is configured to be able to maintain the substrate W in a substantially horizontal state by, for example, adsorption. That is, the substrate holding portion 20 rotates the substrate W around a central axis (rotation axis) perpendicular to the surface Wa of the substrate W when the substrate W is in a substantially horizontal state.

[0053] The supply unit 30 is configured to supply the processing liquid L1 to the surface Wa of the substrate W. The processing liquid L1 may be, for example, a developer.

[0054] The supply unit 30 includes a supply mechanism 31, a drive mechanism 32, and a nozzle 33. The supply mechanism 31 is configured to deliver the processing liquid L1 stored in a container (not shown) via a liquid delivery mechanism (not shown), such as a pump, based on a signal from a controller Ctr. The drive mechanism 32 is configured to move the nozzle 33 in the vertical and horizontal directions based on a signal from the controller Ctr. The nozzle 33 is configured to discharge the processing liquid L1 supplied from the supply mechanism 31 onto the surface Wa of the substrate W.

[0055] The supply unit 40 is configured to supply a processing liquid L2, a cooling gas G1 (gas), and a drying gas G2 to the surface Wa of the substrate W. The processing liquid L2 may be, for example, a rinse liquid (cleaning liquid). The cooling gas G1 and the drying gas G2 are not particularly limited as long as they are gases, and may be inert gases (e.g., nitrogen). The temperatures of the cooling gas G1 and the drying gas G2 may be approximately 20°C to 25°C.

[0056] The supply unit 40 includes supply mechanisms 41A to 41C, a drive mechanism 42, and a nozzle unit 43. Figure 4 and Figure 5As shown, the supply mechanism 41A is configured to deliver the processing liquid L2 stored in a container (not shown) using a liquid delivery mechanism (not shown) such as a pump based on a signal from the controller Ctr. The supply mechanism 41B is configured to deliver the cooling gas G1 stored in a container (not shown) using a gas delivery mechanism (not shown) such as a pump based on a signal from the controller Ctr. The supply mechanism 41C is configured to deliver the drying gas G2 stored in a container (not shown) using a gas delivery mechanism (not shown) such as a pump based on a signal from the controller Ctr. The drive mechanism 42 is configured to move the nozzle unit 43 in the vertical direction and the horizontal direction based on a signal from the controller Ctr.

[0057] The nozzle unit 43 is configured to discharge the processing liquid L2, the cooling gas G1, and the drying gas G2 supplied from the supply mechanisms 41A to 41C toward the surface Wa of the substrate W. Figure 5 As shown, the nozzle unit 43 includes a nozzle head 43a and nozzles 43b to 43d. The nozzle head 43a is configured to integrally hold the nozzles 43b to 43d.

[0058] The nozzle 43b is fluidically connected to the container of the supply mechanism 41A. Therefore, the nozzle 43b is configured to be able to discharge the processing liquid L2 supplied from the supply mechanism 41A toward the surface Wa of the substrate W.

[0059] The nozzle 43c (diffusion nozzle) is fluidically connected to the container of the supply mechanism 41B. Therefore, the nozzle 43c is configured to spray the cooling gas G1 supplied from the supply mechanism 41B toward the surface Wa of the substrate W. A plurality of nozzles extending at different angles relative to the surface Wa of the substrate W are formed at the front end portion (lower end portion) of the nozzle 43c. Therefore, the cooling gas G1 sprayed from the nozzle 43c diffuses in a manner that expands in a direction (horizontal direction) orthogonal to the longitudinal direction of the nozzle 43c as it moves away from the front end portion of the nozzle 43c. The plurality of nozzles may also extend in a manner that expands radially. The front end portion of the nozzle 43c may be as follows. Figure 5 As shown in FIG. 4 , the nozzle 43c may be hemispherical. Figure 5 As shown in the example, the nozzle 43b is arranged between the nozzle 43d, but it may be arranged at the end of the three nozzles 43b to 43d. Alternatively, the nozzles 43b to 43d may be arranged to form a ring.

[0060] The nozzle 43d is fluidically connected to the container of the supply mechanism 41C. Therefore, the nozzle 43d is configured to be able to spray the dry gas G2 supplied from the supply mechanism 41C toward the surface Wa of the substrate W.

[0061] like Figure 4As shown, the cover member 50 is provided around the substrate holding portion 20. The cover member 50 includes a cup-shaped body 51, a liquid discharge port 52, and an exhaust port 53. The cup-shaped body 51 serves as a liquid collection container for receiving the processing liquids L1 and L2 supplied to the substrate W for processing the substrate W. The liquid discharge port 52 is provided at the bottom of the cup-shaped body 51 and is configured to discharge the waste liquid collected by the cup-shaped body 51 to the outside of the liquid processing unit U1.

[0062] The exhaust port 53 is provided at the bottom of the cup-shaped body 51. The exhaust port 53 is provided with an exhaust portion V2, which is configured to discharge the gas in the cup-shaped body 51 by operating based on a signal from the controller Ctr. Therefore, the downflow flowing around the substrate W is discharged to the outside of the liquid processing unit U1 through the exhaust port 53 and the exhaust portion V2. The exhaust portion V2 can be, for example, a throttle valve that can adjust the exhaust volume according to the opening degree. By adjusting the exhaust volume from the cup-shaped body 51 using the exhaust portion V2, the temperature, pressure, humidity, etc. in the cup-shaped body 51 can be controlled.

[0063] The blower B is arranged above the substrate holding portion 20 and the cover member 50 in the liquid processing unit U1. The blower B is configured to generate a downward flow toward the cover member 50 based on a signal from the controller Ctr. The blower B can also be controlled to generate a downward flow at all times during liquid processing of the substrate W.

[0064] [Controller details]

[0065] like Figure 6 As shown, the controller Ctr includes a reader M1, a storage M2, a processor M3, and an indicator M4 as functional modules. These functional modules simply divide the functions of the controller Ctr into multiple modules for convenience and do not necessarily mean that the hardware that constitutes the controller Ctr is divided into these modules. Each functional module is not limited to being implemented by executing a program; it can also be implemented by a dedicated circuit (such as a logic circuit) or an integrated circuit (ASIC) that integrates them.

[0066] The reading unit M1 is configured to read a program from a computer-readable storage medium RM. The storage medium RM stores a program for operating each component of the coating and developing device 2. The storage medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

[0067] The storage unit M2 is configured to store various data. For example, the storage unit M2 can store programs read from the storage medium RM by the reader M1, setting data input by the operator via an external input device (not shown), and the like. These programs can be configured to operate various components of the coating and developing device 2. The storage medium RM can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

[0068] The processing unit M3 is configured to process various data and can generate signals for operating the liquid processing unit U1 , the thermal processing unit U2 , and the like based on the various data stored in the storage unit M2 .

[0069] The instruction unit M4 is configured to be able to transmit the operation signal generated in the processing unit M3 to various devices.

[0070] The hardware of the controller Ctr can be composed of one or more control computers. Figure 7 As shown, the controller Ctr includes a circuit C1 as a hardware component. The circuit C1 can be composed of circuit elements (circuitry). The circuit C1 can include a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

[0071] The processor C2 collaborates with at least one of the memory C3 and the storage C4 to execute programs and perform signal input and output via the input / output port C6, thereby forming the aforementioned functional modules. The memory C3 and the storage C4 function as the storage unit M2. The driver C5 is a circuit that drives the various devices of the coating and developing apparatus 2. The input / output port C6 allows for signal input and output between the driver C5 and the various devices of the coating and developing apparatus 2 (e.g., the liquid processing unit U1, the thermal processing unit U2, etc.).

[0072] The substrate processing system 1 may include either one controller Ctr or a controller group (control unit) composed of multiple controllers Ctr. When the substrate processing system 1 includes a controller group, the above-mentioned functional modules may be implemented by one controller Ctr or by a combination of two or more controllers Ctr. When the controller Ctr is composed of multiple computers (circuit C1), the above-mentioned functional modules may be implemented by one computer (circuit C1) or by a combination of two or more computers (circuit C1). The controller Ctr may also have multiple processors C2. In this case, the above-mentioned functional modules may be implemented by one processor C2 or by a combination of two or more processors C2.

[0073] [Substrate Liquid Treatment Method]

[0074] Next, refer to Figures 8 to 10, the liquid processing method of the substrate W is described.

[0075] First, the controller Ctr controls each part of the coating and developing device 2 to process the substrate W in the processing modules PM1 to PM3. As a result, a resist film R is formed on the surface Wa of the substrate W (see FIG. Figure 8 Next, the controller Ctr controls the various parts of the coating and developing device 2 to transport the substrate W from the processing module PM3 to the exposure device 3. Next, a controller different from the controller Ctr controls the exposure device 3 to expose the resist film R formed on the surface Wa of the substrate W according to a predetermined pattern (see Figure 8 Step S12).

[0076] Next, the controller Ctr controls the various parts of the coating and developing device 2 to transport the substrate W from the exposure device 3 to the liquid processing unit U1 of the processing module PM4. As a result, the substrate W is held by the substrate holding portion 20. Then, the controller Ctr controls the supply portion 30 to supply the processing liquid L1 (developer) to the surface Wa of the substrate W, that is, the upper surface of the resist film R (see Figure 8 Step S13).

[0077] In step S13, the controller Ctr may control the supply unit 30 to supply the processing liquid L1 from the nozzle 33 to the surface Wa of the substrate W while the nozzle 33 moves horizontally above the substrate W that is not rotating. Figure 9 As shown in (a) of FIG. , the processing liquid L1 is sequentially supplied from one end to the other end of the substrate W. Alternatively, the controller Ctr may control the substrate holding portion 20 and the supply portion 30 to rotate the substrate W and supply the processing liquid L1 from the nozzle 33 to the surface Wa of the substrate W while moving the nozzle 33 horizontally above the substrate W. In this case, the processing liquid L1 is supplied in a spiral from the center to the periphery of the substrate W, or from the periphery to the center of the substrate W.

[0078] Next, the controller Ctr controls the supply unit 40 to supply the cooling gas G1 from the nozzle 43c to the surface Wa of the substrate W, that is, the upper surface of the processing liquid L1 (see FIG. Figure 8 In step S14, as Figure 9 As shown in (b) of FIG. , the cooling gas G1 is sprayed onto at least the central portion of the surface Wa of the substrate W. In this case, the processing liquid L1 on the surface Wa of the substrate W does not need to be blown away by the cooling gas G1. In other words, the surface Wa of the substrate W, to which the processing liquid L1 is supplied, does not need to be exposed by the spraying of the cooling gas G1.

[0079] The spraying of the cooling gas G1 onto the processing liquid L1 may be continued during the development of the resist film R. For example, the spraying of the cooling gas G1 onto the processing liquid L1 may be continued from the time the processing liquid L1 is supplied to the surface Wa of the substrate W until the development is completed or until a subsequent process begins. In step S14, the controller Ctr may control the exhaust unit V2 to supply the cooling gas G1 onto the surface Wa of the substrate W while either venting the inside of the cup-shaped body 51 or venting the inside of the cup-shaped body 51.

[0080] Next, the controller Ctr controls the substrate holding unit 20 and the supply unit 40 to supply the processing liquid L2 (rinsing liquid) from the nozzle 43b to the surface Wa of the rotating substrate W, that is, the upper surface of the processing liquid L1 (see Figure 8 Step S15). Thus, Figure 10 As shown in (a) in FIG. 1 , the resist dissolved in the resist film R by reacting with the processing liquid L1 is washed away (discharged) from the surface Wa of the substrate W by the processing liquid L2 together with the processing liquid L1. In this way, a resist pattern RP is formed on the surface Wa of the substrate W.

[0081] In step S15, the controller Ctr controls the supply unit 40 to horizontally move the nozzle 43b so that the nozzle 43b moves from the center toward the periphery of the substrate W above the substrate W. In step S15, the controller Ctr can control the exhaust unit V2 to supply the processing liquid L2 toward the surface Wa of the substrate W while continuing to exhaust gas from the cup-shaped body 51. The exhaust volume from the cup-shaped body 51 in step S15 can be set to be greater than the exhaust volume from the cup-shaped body 51 in step S14.

[0082] Next, when the nozzle 43d reaches the approximate center of the substrate W, the controller Ctr controls the substrate holding unit 20 and the supply unit 40 to supply the dry gas G2 from the nozzle 43d to the surface Wa of the rotating substrate W (see FIG. Figure 8 Step S16).

[0083] As a result, the processing liquid L2 present in the approximate center of the substrate W is blown to the surroundings and evaporated. Figure 10 As shown in (b), a dry area D is formed in the center of the substrate W (see Figure 5 and Figure 8 Here, the dry area D refers to the area where the surface Wa of the substrate W is exposed due to the evaporation of the processing liquid L2, but also includes the case where a very small amount (e.g., a trace amount) of liquid droplets adhere to the surface Wa. The dry area D expands from the center of the substrate W toward the periphery due to the centrifugal force generated by the rotation of the substrate W. After the dry area D is formed, the supply of the drying gas G2 from the nozzle 43d can be stopped.

[0084] In step S16, the drying gas G2 may be supplied from the nozzle 43d while the processing liquid L2 is continuously supplied from the nozzle 43b. In step S16, the controller Ctr may control the exhaust unit V2 to supply the drying gas G2 toward the surface Wa of the substrate W while continuously exhausting gas from the cup-shaped body 51. The exhaust volume from the cup-shaped body 51 in step S16 may be set to be greater than the exhaust volume from the cup-shaped body 51 in step S14.

[0085] Meanwhile, the processing liquid L2 on the surface Wa of the substrate W also spreads from the center toward the periphery of the substrate W due to the centrifugal force generated by the rotation of the substrate W. Then, after the processing liquid L2 on the surface Wa of the substrate W is thrown out from the periphery of the substrate W, the drying of the substrate W is completed. In this manner, the liquid treatment of the substrate W is completed.

[0086] [effect]

[0087] According to the above example, the cooling gas G1 ejected from the nozzle 43c is diffused over a wide area, including at least the central portion, of the surface Wa of the substrate W. This promotes the vaporization of the processing liquid L1 on the surface Wa of the substrate W, and the heat of vaporization cools the central portion, particularly, of the substrate W. Consequently, a temperature difference between the central portion and the peripheral portion of the substrate W is less likely to occur, allowing the in-plane temperature distribution of the substrate W to be more uniformly controlled.

[0088] According to the above example, the cooling gas G1 ejected from the nozzle 43 c diffuses over a wide area. Therefore, when the cooling gas G1 reaches the processing liquid L1 on the substrate W, the impact of the cooling gas G1 on the processing liquid L1 is extremely small. Therefore, undulation or deformation of the processing liquid L1 on the substrate W can be suppressed.

[0089] According to the above example, the nozzle 43c can include a hemispherical tip portion having multiple ejection ports. In this case, the cooling gas G1 can be easily and uniformly ejected from the nozzle 43c over a wide area. Therefore, the area of ​​the substrate W to which the cooling gas G1 is ejected can be cooled more uniformly.

[0090] According to the above example, the cooling gas G1 can be continuously sprayed onto the processing liquid L1 during the development of the resist film R. In this case, the cooling gas G1 is sprayed from the nozzle 43c between the supply of the processing liquid L1 and the supply of the processing liquid L2 onto the substrate W. Therefore, the respective supply processes are not hindered by the nozzle 43c. As a result, a series of liquid processes can be smoothly performed.

[0091] According to the above example, the exhaust volume from the cup-shaped body 51 in step S14 is set to be smaller than the exhaust volume from the cup-shaped body 51 in steps S15 and S16. In this case, when the cooling gas G1 is ejected from the nozzle 43c, the temperature drop at the peripheral edge of the substrate W can be suppressed. Therefore, the in-plane temperature distribution of the substrate W can be further uniformly controlled.

[0092] According to the above example, the nozzles 43b to 43d are held by the same nozzle head 43a, so that the nozzle unit 43 can be concentrated.

[0093] [Modification]

[0094] The disclosure of this specification should be considered as an illustration in all aspects and not as a limitation. Various omissions, substitutions, and changes may be made to the above examples without departing from the scope of the claims and their spirit.

[0095] (1) The nozzle 43c may also be in a shape other than a hemispherical shape. For example, Figure 11 As shown in (a) in FIG. 4 , the nozzle 43c is cylindrical. Figure 11 As shown in (b) in FIG. 4 , the nozzle 43c is prismatic in shape. Although not shown, the nozzle 43c can also be configured by forming a plurality of ejection ports on a flat surface or a curved surface.

[0096] (2) The multiple ejection ports of the nozzle 43c may be formed on the entire circumference of the nozzle 43c. Alternatively, the angles of the multiple ejection ports and / or the positions of the ejection ports on the circumference of the nozzle 43c may be set so that the ejected cooling gas G1 does not hit the two nozzles 43b and 43d located to the sides of the nozzle 43c.

[0097] (3) The opening areas of the plurality of nozzles may be set so that the flow rates of the cooling gas G1 ejected from the plurality of nozzles of the nozzle 43c when reaching the surface Wa of the substrate W (the upper surface of the processing liquid L1) are substantially the same. For example, the plurality of nozzles may be formed in the nozzle 43c so that the opening area of ​​the nozzles increases as the nozzles move from the front end (lower end) to the base end. Alternatively, the plurality of nozzles may be formed in the nozzle 43c so that the number of nozzles increases as the nozzles move from the front end (lower end) to the base end in order to achieve the same effect.

[0098] (4) In step S14, you can also Figure 12As shown in (a) of FIG. 1 , when viewed from the vertical direction, the nozzle 43 c is located at a position eccentric to the rotation center of the substrate W. In this case, the spray range AR1 of the cooling gas G1 sprayed from the nozzle 43 c is also eccentric to the rotation center of the substrate W. However, as the substrate W rotates, the cooling gas G1 is diffused over a wider range AR2 of the substrate W. Therefore, the in-plane temperature distribution of the substrate W can be more uniformly controlled.

[0099] (5) In step S14, you can also Figure 12 As shown in the example of (b) in FIG. 1 , when viewed from the vertical direction, the nozzle 43c is located eccentrically from the center of rotation of the substrate W, and the nozzle 43c moves horizontally. In this case, the rotation of the substrate W and the horizontal movement of the nozzle 43c allow the cooling gas G1 to be diffused over a wider area AR3 of the substrate W. As a result, the in-plane temperature distribution of the substrate W can be more uniformly controlled.

[0100] (6) In step S14, the controller Ctr may control the supply unit 40 to supply the cooling gas G1 to the central portion of the surface Wa of the substrate W for a longer period of time than to the peripheral portion. In this case, the cooling of the central portion of the substrate W can be further accelerated. Therefore, the in-plane temperature distribution of the substrate W can be more uniformly controlled.

[0101] (7) In step S14, the controller Ctr may control the supply unit 40 to supply the cooling gas G1 to the central portion of the surface Wa of the substrate W, while not supplying the cooling gas G1 to the peripheral portion of the surface Wa of the substrate W. The peripheral portion of the surface Wa of the substrate W to which the cooling gas G1 is not supplied may be, for example, approximately 3 cm to 5 cm from the peripheral portion of the substrate W. In this case, the cooling of the central portion of the substrate W can be further promoted. Therefore, the in-plane temperature distribution of the substrate W can be more uniformly controlled.

[0102] (8) The supply of the drying gas G2 in step S16 may not be performed. In this case, the processing liquid L2 on the surface Wa of the substrate W can be thrown off by the centrifugal force generated by the rotation of the substrate W, thereby drying the substrate W.

[0103] (9) Two of the nozzles 43b to 43d may be retained in the nozzle head 43a, and the remaining nozzles may be separated from the nozzle head 43a. Alternatively, all of the nozzles 43b to 43d may be separated.

[0104] (10) When the nozzles 43b and 43c are retained on the nozzle head 43a, the processing liquid L2 can be supplied from the nozzle 43b and the cooling gas G1 can be supplied from the nozzle 43c while the height of the nozzle 43a is maintained constant. When the nozzles 43c and 43d are retained on the nozzle head 43a, the cooling gas G1 can be supplied from the nozzle 43c and the drying gas G2 can be supplied from the nozzle 43d while the height of the nozzle 43a is maintained constant. When the nozzles 43b to 43d are retained on the nozzle head 43a, the processing liquid L2 can be supplied from the nozzle 43b, the cooling gas G1 can be supplied from the nozzle 43c, and the drying gas G2 can be supplied from the nozzle 43d while the height of the nozzle 43a is maintained constant. In these cases, the above series of processes are performed without the nozzles moving up and down. Therefore, the movement of the nozzles is simplified, and the efficiency of the liquid processing can be improved.

[0105] [Other examples]

[0106] Example 1. An example of a liquid processing device comprises: a substrate holding portion configured to hold a substrate; a processing liquid supply portion configured to supply a processing liquid to the surface of the substrate; a gas supply portion configured to supply a gas to the surface of the substrate; and a control portion. The gas supply portion includes a diffusion nozzle having a plurality of nozzles extending at different angles relative to the surface of the substrate. When the surface of the substrate is supplied with processing liquid, the control portion controls the gas supply portion so that gas is sprayed from the diffusion nozzle to an area at least including the central portion of the surface of the substrate. In this case, the gas sprayed from the diffusion nozzle is widely diffused in an area at least including the central portion of the surface of the substrate. Therefore, the vaporization of the processing liquid on the surface of the substrate can be promoted, and the central portion, in particular, of the substrate can be cooled by the heat of vaporization. Therefore, it is difficult to generate a temperature difference between the central portion and the peripheral portion of the substrate, so that the in-plane temperature distribution of the substrate can be controlled more uniformly. Furthermore, in this case, the gas ejected from the diffusion nozzle diffuses over a wide area, so when the gas reaches the processing liquid on the substrate, the impact of the gas on the processing liquid is minimal, thereby suppressing fluctuations or deformation of the processing liquid on the substrate.

[0107] Example 2. In the apparatus of Example 1, the diffusion nozzle may include a hemispherical tip portion having multiple nozzles. In this case, the diffusion nozzle can more easily and evenly spray gas over a wide area. This allows for more uniform cooling of the substrate in the area where the gas is sprayed.

[0108] Example 3. In the apparatus of Example 1 or Example 2, the control unit may also control the gas supply unit while the processing liquid is being supplied to the substrate surface, so that gas is sprayed from the diffusion nozzle onto the substrate surface, and gas is supplied for a longer period of time toward the center of the substrate surface than toward the periphery. In this case, cooling of the center of the substrate can be further accelerated. Consequently, the in-plane temperature distribution of the substrate can be more uniformly controlled.

[0109] Example 4. In the apparatus of Example 3, the control unit may also control the gas supply unit while the processing liquid is being supplied to the substrate surface, so that gas is sprayed from the diffusion nozzle toward the central portion of the substrate surface, while gas is not sprayed from the diffusion nozzle toward the peripheral portion of the substrate surface. In this case, cooling of the central portion of the substrate can be further accelerated. Consequently, the in-plane temperature distribution of the substrate can be more uniformly controlled.

[0110] Example 5. In any of the apparatuses of Examples 1 to 4, the control unit may control the gas supply unit so that gas is sprayed from the diffusion nozzle onto a region of the substrate surface that includes at least the center portion, while the processing liquid is being supplied to the substrate surface and the diffusion nozzle is eccentric with respect to the substrate's rotational center when viewed vertically. In this case, by rotating the substrate during the spraying of gas from the diffusion nozzle, gas from the diffusion nozzle can be diffused over a wider area of ​​the substrate. Consequently, the in-plane temperature distribution of the substrate can be more uniformly controlled.

[0111] Example 6. The apparatus of Examples 1 to 6 further includes a cleaning liquid supply unit configured to supply cleaning liquid to the substrate surface. The control unit may also control the cleaning liquid supply unit after controlling the gas supply unit to supply cleaning liquid to the substrate surface. In this case, the gas jet from the diffusion nozzle is performed between the supply of the processing liquid to the substrate and the supply of the cleaning liquid. Therefore, the respective supply processes are not hindered by the diffusion nozzle, thereby enabling a smooth execution of a series of liquid processes.

[0112] Example 7. The apparatus of Example 6 further includes an exhaust unit configured to exhaust the atmosphere surrounding the substrate held by the substrate holding unit. The control unit may further control the exhaust unit so that the exhaust volume during the process of controlling the gas supply unit is smaller than the exhaust volume during the process of controlling the cleaning liquid supply unit. In this case, the temperature drop around the periphery of the substrate when the gas is ejected from the diffusion nozzle can be suppressed. Thus, the in-plane temperature distribution of the substrate can be more uniformly controlled.

[0113] Example 8. In the device of Example 6 or Example 7, the nozzle of the cleaning liquid supply unit is configured to be movable as a whole with the diffusion nozzle, and the control unit can also perform the processing of the control gas supply unit under the condition that the height positions of the diffusion nozzle and the nozzle of the cleaning liquid supply unit are all maintained at a certain level, so that the surface of the substrate in the state of being supplied with the treatment liquid is not exposed due to the injection of gas from the diffusion nozzle, and perform the processing of the control cleaning liquid supply unit to discharge the treatment liquid supplied to the surface of the substrate. In this case, two nozzles are mounted on one nozzle, so that the device can be centralized. In addition, the above series of processing is carried out in a manner that the nozzle does not move up and down, so the movement of the nozzle is simplified, thereby achieving high efficiency of liquid processing. Further, the surface of the substrate is not exposed due to the injection of gas from the diffusion nozzle, so when the gas reaches the treatment liquid on the substrate, the impact of the gas on the treatment liquid is further reduced. Therefore, the fluctuation or deformation of the treatment liquid on the substrate can be further suppressed.

[0114] Example 9. The apparatus of Example 7 or Example 8 further comprises: a drying gas supply unit configured to supply drying gas to the surface of the substrate; and a shower head that holds a diffusion nozzle and a nozzle of the drying gas supply unit. The control unit may also control the drying gas supply unit after controlling the cleaning liquid supply unit to spray the drying gas onto the surface of the substrate to remove the cleaning liquid from the substrate surface. In this case, the two nozzles are mounted on a single shower head, thereby enabling a more compact apparatus.

[0115] Example 10. In any of the devices of Examples 7 to 9, the control unit may also execute the gas supply control process, the cleaning liquid supply control process, and the dry gas supply control process while maintaining the height positions of the diffuser nozzle, the cleaning liquid supply nozzle, and the dry gas supply nozzle constant. In this case, the aforementioned series of processes is performed without the nozzles moving vertically. This simplifies the movement of the nozzles, thereby achieving more efficient liquid processing.

[0116] Example 11. A liquid treatment method includes: supplying a treatment liquid to a substrate surface; and, while the treatment liquid is supplied to the substrate surface, spraying a gas from a diffusion nozzle onto a region including at least a central portion of the substrate surface, wherein the diffusion nozzle has a plurality of nozzles extending at different angles relative to the substrate surface. In this case, the same effects as those of the apparatus of Example 1 can be achieved.

[0117] Example 12: In the method of Example 11, the diffusion nozzle may include a hemispherical tip portion having a plurality of ejection ports. In this case, the same effects as those of the device of Example 2 can be obtained.

[0118] Example 13. In the method of Example 11 or Example 12, the step of spraying gas may also include spraying gas from a diffusion nozzle onto the surface of the substrate while the processing liquid is supplied to the surface of the substrate, and supplying gas for a longer time toward the center portion of the substrate surface than toward the peripheral portion. In this case, the same effects as those of the apparatus of Example 3 can be achieved.

[0119] Example 14. In the method of Example 13, the step of spraying gas may include supplying gas from a diffusion nozzle to a central portion of the substrate surface while the processing liquid is supplied to the substrate surface, while not spraying gas from the diffusion nozzle to a peripheral portion of the substrate surface. In this case, the same effects as those of the apparatus of Example 4 can be achieved.

[0120] Example 15. In any of the methods of Examples 11 to 14, the step of injecting gas may include injecting gas from the diffusion nozzle onto a region including at least the center of the substrate surface, while the processing liquid is supplied to the substrate surface and the diffusion nozzle is offset from the substrate's rotation center when viewed vertically. In this case, the same effects as those of the apparatus of Example 5 can be achieved.

[0121] Example 16. Any of the methods of Examples 11 to 15 may further include the step of supplying a cleaning liquid to the surface of the substrate after the step of spraying the gas. In this case, the same effects as those of the apparatus of Example 6 can be obtained.

[0122] Example 17. In the method of Example 16, the amount of exhaust from the atmosphere around the substrate when the gas is sprayed is smaller than the amount of exhaust from the atmosphere around the substrate when the cleaning liquid is supplied. In this case, the same effects as those of the apparatus of Example 7 can be obtained.

[0123] Example 18. The method of Example 16 or Example 17 may further include, after the step of supplying the cleaning liquid, the step of spraying a drying gas onto the surface of the substrate to remove the cleaning liquid from the surface of the substrate. The diffusion nozzle and the nozzle for supplying the drying gas may be retained in the same nozzle head. In this case, the same effects as those of the apparatus of Example 9 can be achieved.

[0124] Example 19. In any of the methods of Examples 16 to 18, the steps of injecting gas, supplying cleaning liquid, and supplying drying gas are all performed while the height positions of the diffuser nozzle, the nozzle for supplying cleaning liquid, and the nozzle for supplying drying gas are all maintained constant. In this case, the same effects as those of the apparatus of Example 10 can be achieved.

[0125] Example 20. A computer-readable storage medium may store a program for causing a liquid processing apparatus to execute the methods of Examples 11 to 19. In this case, the same effects as those of the apparatus of Example 1 can be achieved. In this specification, a computer-readable storage medium may include a non-transitory computer recording medium (e.g., various primary storage devices or auxiliary storage devices) and a transitory computer recording medium (e.g., a data signal that can be provided via a network).

[0126] [Example]

[0127] Hereinafter, Examples 1 to 3 and Comparative Examples will be described, but they are not intended to limit the examples disclosed in this specification.

[0128] (Example 1)

[0129] In Example 1, the substrate processing system 1 described above was used to form a resist pattern RP on the front surface Wa of a substrate W having a diameter of 300 mm in the order of steps S11 to S17. In step S14, the cooling gas G was sprayed onto the front surface Wa of the substrate W for 140 seconds without rotating the substrate W, with the nozzle 43 c positioned at the rotation center of the substrate W when viewed from a vertical direction.

[0130] (Example 2)

[0131] In Example 2, a resist pattern RP was formed on the front surface Wa of a substrate W having a diameter of 300 mm using the substrate processing system 1 described above, in the order of steps S11 to S17. In this case, in step S14, the cooling gas G was sprayed onto the front surface Wa of the substrate W for 140 seconds, with the nozzle 43 c positioned 50 mm off-center from the rotation center of the substrate W when viewed from the vertical direction and the substrate W being rotated at 10 rpm.

[0132] (Example 3)

[0133] In Example 3, the substrate processing system 1 described above was used to form a resist pattern RP on the front surface Wa of a substrate W having a diameter of 300 mm in the order of steps S11 to S17. In this case, in step S14, the nozzle 43c was horizontally moved back and forth three times between a position of 0 mm and 100 mm from the rotation center of the substrate W as viewed from the vertical direction, and the cooling gas G was sprayed onto the front surface Wa of the substrate W for 140 seconds while the substrate W was rotated at 10 rpm.

[0134] (Comparative Example)

[0135] In the comparative example, the substrate processing system 1 was used to form a resist pattern RP on the surface Wa of a substrate W having a diameter of 300 mm in the order of steps S11 to S13 and S15 to S17. That is, the cooling gas G1 was not sprayed onto the surface Wa of the substrate W from the nozzle 43c.

[0136] (result)

[0137] The temperature difference between the maximum and minimum values ​​of the in-plane temperature of substrate W was measured 55 seconds after the treatment liquid L1 was supplied to the surface Wa of substrate W, that is, after the start of step S13. The result was that the temperature difference in Example 1 was 1.03°C. The temperature difference in Example 2 was 0.49°C. The temperature difference in Example 3 was 0.52°C. The temperature difference in the comparative example was 1.13°C. Therefore, it was confirmed that the in-plane temperature distribution of substrate W was more uniform in Examples 1 to 3 than in the comparative example.

[0138] The in-plane line width distribution of the resist pattern RP formed on the surface Wa of the substrate W was measured for each of Examples 1 to 3 and the comparative example. The results are shown in FIG. Figure 13 and Figure 14 Furthermore, the deviation (3σ) of the in-plane line width distribution was calculated for each of Examples 1 to 3 and the comparative example. Figure 15 The relative 3σ (relative 3σ) of each of Examples 1 to 3 and Comparative Example is shown when 3σ in the Comparative Example is set to 100.

[0139] like Figures 13 to 15 As shown, it was confirmed that the in-plane line width distribution of Examples 1 to 3 was more uniform than that of the comparative example. In particular, in Example 2, the uniformity of the in-plane line width distribution was improved by 40.0% compared to the comparative example. In Example 3, the uniformity of the in-plane line width distribution was improved by 40.6% compared to the comparative example.

Claims

1. A liquid processing device, characterized in that: include: a substrate holding portion configured to hold a substrate; a processing liquid supply portion configured to supply a processing liquid to the surface of the substrate; a gas supply portion configured to supply gas to the surface of the substrate; and Control Department, The gas supply unit includes a diffusion nozzle having a plurality of nozzles extending at different angles relative to the surface of the substrate. The control unit controls the gas supply unit when the processing liquid is supplied to the surface of the substrate, so that the diffusion nozzle is located eccentrically from the rotation center of the substrate when viewed from the vertical direction, and the gas is continuously sprayed from the diffusion nozzle to an area including at least the central part of the surface of the substrate.

2. The liquid processing device according to claim 1, wherein The diffusion nozzle includes a hemispherical front end portion having the plurality of ejection ports formed therein.

3. The liquid processing device according to claim 1, wherein The control unit controls the gas supply unit in a state where the processing liquid is supplied to the surface of the substrate, so that the gas is sprayed from the diffusion nozzle to the surface of the substrate, and the gas is supplied to the central portion for a longer time than to the peripheral portion of the surface of the substrate.

4. The liquid processing device according to claim 3, wherein: The control unit controls the gas supply unit in a state where the processing liquid is supplied to the surface of the substrate, so that the gas is sprayed from the diffusion nozzle to the central portion of the surface of the substrate, while the gas is not sprayed from the diffusion nozzle to the peripheral portion of the surface of the substrate.

5. The liquid processing device according to claim 1, wherein further comprising a cleaning liquid supply unit having a nozzle for supplying cleaning liquid to the surface of the substrate, The control unit controls the cleaning liquid supply unit after controlling the gas supply unit so as to supply the cleaning liquid to the surface of the substrate.

6. The liquid processing device according to claim 5, wherein: further comprising an exhaust unit configured to exhaust the atmosphere around the substrate held by the substrate holding unit, The control unit further performs a process of controlling the exhaust unit so that an exhaust amount in the process of controlling the gas supply unit is smaller than an exhaust amount in the process of controlling the cleaning liquid supply unit.

7. The liquid processing device according to claim 5, wherein: The nozzle of the cleaning liquid supply unit is configured to be movable integrally with the diffusion nozzle. The control unit controls the gas supply unit while the height positions of the diffusion nozzle and the nozzle of the cleaning liquid supply unit are maintained at a certain level, so that the surface of the substrate supplied with the treatment liquid is not exposed due to the injection of the gas from the diffusion nozzle, and controls the cleaning liquid supply unit to discharge the treatment liquid supplied to the surface of the substrate.

8. The liquid processing device according to any one of claims 5 to 7, wherein: Also includes: a drying gas supply unit having a nozzle for supplying a drying gas to the surface of the substrate; and a shower head that holds the diffusion nozzle and the nozzle of the drying gas supply portion, After controlling the cleaning liquid supply unit, the control unit further controls the drying gas supply unit so as to spray the drying gas toward the surface of the substrate to remove the cleaning liquid from the surface of the substrate.

9. The liquid processing device according to claim 8, wherein The control unit performs a process of controlling the gas supply unit, a process of controlling the cleaning liquid supply unit, and a process of controlling the drying gas supply unit while the height positions of the diffusion nozzle, the nozzle of the cleaning liquid supply unit, and the nozzle of the drying gas supply unit are all maintained constant.

10. A liquid treatment method, characterized in that: include: supplying a treatment liquid to the surface of the substrate; and The step of continuously jetting gas from the diffusion nozzle to an area at least including a central portion of the surface of the substrate in a state where the treatment liquid is supplied to the surface of the substrate, with the diffusion nozzle being located eccentrically from the rotation center of the substrate when viewed from a vertical direction, wherein the diffusion nozzle is formed with a plurality of nozzles extending at different angles relative to the surface of the substrate.

11. The liquid processing method according to claim 10, wherein: The diffusion nozzle includes a hemispherical front end portion having the plurality of ejection ports formed therein.

12. The liquid processing method according to claim 10, wherein: The step of spraying gas includes spraying the gas onto the surface of the substrate from the diffusion nozzle while the surface of the substrate is supplied with the processing liquid, and supplying the gas to the central portion for a longer time than to the peripheral portion of the surface of the substrate.

13. The liquid processing method according to claim 12, wherein: The step of spraying gas includes supplying the gas from the diffusion nozzle to the central part of the surface of the substrate while the surface of the substrate is supplied with the processing liquid, and not spraying the gas from the diffusion nozzle to the peripheral part of the surface of the substrate.

14. The liquid processing method according to claim 10, wherein: The method further includes supplying a cleaning liquid to the surface of the substrate after the step of spraying the gas.

15. The liquid processing method according to claim 14, wherein: The amount of exhaust from the atmosphere around the substrate when the gas is ejected is smaller than the amount of exhaust from the atmosphere around the substrate when the cleaning liquid is supplied.

16. The liquid treatment method according to claim 14 or 15, wherein: The method further comprises the step of spraying a drying gas onto the surface of the substrate to remove the cleaning liquid from the surface of the substrate after the step of supplying the cleaning liquid. The diffusion nozzle and the nozzle for supplying the drying gas are both held in the same shower head.

17. The liquid processing method according to claim 16, wherein: The steps of spraying gas, supplying cleaning liquid, and supplying drying gas are all performed while the height positions of the diffusion nozzle, the nozzle for supplying cleaning liquid, and the nozzle for supplying drying gas are all maintained constant.

18. A computer-readable storage medium, characterized in that: A program for causing a liquid processing apparatus to execute the liquid processing method according to any one of claims 10 to 17 is stored.

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