Tray for chemical vapor deposition apparatus and chemical vapor deposition apparatus

Abstract

A tray for a chemical vapor deposition apparatus and a chemical vapor deposition apparatus, wherein the tray comprises: a tray rotatable along its central axis, provided with a plurality of substrate slots for accommodating substrates to be processed, each substrate slot comprising a distal segment distal from the central axis, a proximal segment proximal to the central axis, and a first compensation segment located between the distal and proximal segments; the substrate slot having a slot center; a first distance from the first compensation segment to the slot center; a second distance from the proximal segment to the slot center; the first distance being greater than the second distance. Utilizing the chemical vapor deposition apparatus facilitates improving the consistency of epitaxial layer growth at the edge of a wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a tray for a chemical vapor deposition device and a chemical vapor deposition device. Background Art

[0002] A light-emitting diode (LED) is a semiconductor diode that converts electrical energy into light. LEDs offer the advantages of high efficiency, energy saving, and environmental friendliness, making them widely used in areas such as traffic signs and outdoor full-color displays. In particular, the use of high-power LEDs for solid-state lighting has become a new generation of light source, entering millions of households and revolutionizing lighting.

[0003] Typically, the substrate to be processed is placed on a tray within the reaction chamber of a metal organic chemical vapor deposition (MOCVD) device. Heat energy provided by the MOCVD device's heating filaments is transferred to the substrate through the tray. Simultaneously, raw materials are introduced into the reaction chamber, causing epitaxial growth of semiconductor material on the surface of the substrate. The base is equipped with multiple substrate slots, each designed to accommodate a single substrate.

[0004] During epitaxial growth of semiconductor material on the substrate, the tray rotates at high speed. Centrifugal force forces the substrate away from the center of the tray and into close contact with the sidewalls of the substrate slot. Because heat from the heating filaments is conducted to the substrate via the base, the temperature of the contact area between the substrate and the sidewalls can be significantly higher than that of the non-contact area. This results in inconsistent wavelengths across the substrate, affecting uniformity across the entire surface. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide a tray for a chemical vapor deposition device and a chemical vapor deposition device, so as to improve the consistency of growing an epitaxial layer on the surface of a substrate to be processed.

[0006] In order to solve the above technical problems, the present invention provides a tray for a chemical vapor deposition device, including: a tray that can rotate along its central axis and is provided with a plurality of substrate slots, wherein the substrate slots are used to accommodate substrates to be processed, and each of the substrate slots includes a distal segment away from the central axis, a proximal segment close to the central axis, and a first compensation segment located between the distal segment and the proximal segment, the proximal segment of the substrate slot has a slot center, the distance from the first compensation segment to the slot center is a first distance, the distance from the proximal segment to the slot center is a second distance, and the first distance is greater than the second distance.

[0007] Optionally, the centers of the plurality of substrate slots form a circle, and the center of the circle coincides with the center of the tray.

[0008] Optionally, the centers of the substrate slots form a plurality of concentric circles, and the centers of the plurality of concentric circles coincide with the center of the tray.

[0009] Optionally, the number of the first compensation segments between the distal segment and the proximal segment is one or more.

[0010] Optionally, the distal segment further includes a second compensation segment, and the distance between the second compensation segment and the center of the slot is a third distance, and the third distance is greater than the second distance.

[0011] Optionally, the difference between the first distance and the second distance is 0.1 mm to 2 mm.

[0012] Optionally, the depth of the first compensation section is 0.5 mm to 2 mm.

[0013] Optionally, the sizes of the wafer include: 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches.

[0014] Optionally, the material of the tray includes: graphite or silicon carbide.

[0015] Optionally, the substrate to be processed has a notch, the notch faces the distal segment, and the substrate to be processed around the notch is in contact with the distal segment.

[0016] Correspondingly, the present invention also provides a chemical vapor deposition device, comprising: a reaction chamber; and the above-mentioned tray, located in the reaction chamber.

[0017] Optionally, the chemical vapor deposition device includes: a metal organic compound chemical vapor deposition device.

[0018] Optionally, the method further includes: a heating device for heating the tray; a gas shower head located in the reaction chamber and arranged opposite to the tray; and a gas delivery device for delivering reaction gas into the gas shower head.

[0019] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0020] In the chemical vapor deposition device provided by the technical solution of the present invention, although the substrate to be processed located in the substrate slot is easily offset in the direction away from the center of the tray under the action of centrifugal force when the tray rotates along its central axis, since the distance from the first compensation section of the substrate slot to the center of the slot is greater than the distance from the proximal section of the substrate slot to the center of the slot, the difference between the distance from the side wall of the substrate to be processed to the first compensation section and the distance to the proximal section is small. Therefore, the temperature difference transmitted from the side wall of the tray to the edge of the substrate to be processed is small, which is beneficial to improving the consistency of growing the epitaxial layer at the edge of the surface of the substrate to be processed. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a structural schematic diagram of a pallet of the present invention;

[0022] Figure 2 yes Figure 1 Top view of the tray;

[0023] Figure 3 is a top view of another tray of the present invention;

[0024] Figure 4 yes Figure 1 A schematic structural diagram of a substrate slot;

[0025] Figure 5 The substrate to be processed is placed Figure 4 Schematic diagram of the structure inside the substrate slot;

[0026] Figure 6 yes Figure 1 A schematic structural diagram of another substrate slot;

[0027] Figure 7 yes Figure 1 A schematic structural diagram of another substrate slot;

[0028] Figure 8 It is a structural schematic diagram of a chemical vapor deposition device of the present invention. DETAILED DESCRIPTION

[0029] As described in the background art, the epitaxial layer grown at the edge of a substrate to be processed using an existing chemical vapor deposition device has poor consistency. To solve the above technical problems, the technical solution of the present invention provides a tray for a chemical vapor deposition device and a chemical vapor deposition device, wherein the tray device includes: a tray that can rotate along its central axis and is provided with a plurality of substrate slots, wherein the substrate slots are used to accommodate substrates to be processed, each of the substrate slots includes a distal segment away from the central axis, a proximal segment close to the central axis, and a first compensation segment located between the distal segment and the proximal segment, the proximal segment of the substrate slot having a slot center, a first distance from the first compensation segment to the slot center, a second distance from the proximal segment to the slot center, and the first distance is greater than the second distance. Using the chemical vapor deposition device is conducive to improving the consistency of epitaxial layer growth at the edge of the substrate to be processed.

[0030] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0031] Figure 1 It is a structural schematic diagram of a pallet of the present invention; Figure 2 yes Figure 1 Top view of the tray.

[0032] Please refer to Figure 1 and Figure 2 The tray 100 can rotate along its central axis and is provided with a plurality of substrate slots 101.

[0033] In this embodiment, the present invention further includes a rotating shaft 102 , wherein the central axis of the rotating shaft 102 is colinear with the central axis of the tray 100 , and the rotating shaft 102 rotates along the X direction to drive the tray 100 to rotate.

[0034] The substrate slots 101 are used to accommodate substrates to be processed. When the tray 100 rotates along the X direction, the substrates to be processed tend to move away from the center O of the tray under the action of centrifugal force.

[0035] The material of the tray 100 includes graphite or silicon carbide. When the material of the tray 100 changes, even if the dimensions of the substrate slot 101 and the size of the substrate to be processed remain the same, different areas of the substrate slot 101 will heat the tray 100 differently. Specifically, when using trays 100 made of different materials, the dimensions of the substrate slot 101 must be adjusted accordingly to improve the consistency of epitaxial layer growth at the edges of the substrate to be processed.

[0036] In this embodiment, the centers of the plurality of substrate slots 101 form a circle, and the center of the circle coincides with the center O of the tray 100 .

[0037] Figure 3It is a top view of another tray of the present invention.

[0038] In this embodiment, the centers of the substrate slots 101 form a plurality of concentric circles, and the centers of the concentric circles coincide with the center O of the tray 100 .

[0039] The substrate slot 101 is described in detail below:

[0040] Figure 4 yes Figure 1 A schematic structural diagram of a substrate slot.

[0041] Please refer to Figure 4 Each of the substrate slots 101 includes a distal segment 101a away from the central axis, a proximal segment 101b close to the central axis, and a first compensation segment 101c located between the distal segment 101a and the proximal segment 101b. The substrate slot 101 has a slot center O1, and the distance from the first compensation segment 101c to the slot center O1 is a first distance R1. The distance from the proximal segment 101b to the slot center O1 is a second distance R2, and the first distance R1 is greater than the second distance R2.

[0042] In this embodiment, the first distance R1 is greater than the second distance R2, that is, the first compensation segment 101c protrudes from the circle where the proximal segment 101b is located.

[0043] Figure 5 The substrate to be processed is placed Figure 4 Schematic diagram of the structure inside the substrate slot.

[0044] Please refer to Figure 5 The substrate 200 to be processed has a notch 201. When the substrate 200 to be processed is placed in the substrate groove 101, the notch 201 faces the distal segment 101a, and the substrate 200 to be processed around the notch 201 contacts the distal segment 101a.

[0045] In this embodiment, the sizes of the substrates 200 to be processed include: 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, and 12 inches. When the size of the substrate 200 to be processed changes, even if the size of the substrate slot 101 and the material of the tray 100 remain the same, the heating conditions of the tray 100 will vary from area to area within the substrate slot 101. In other words, when selecting substrates 200 to be processed of different sizes, the size of the substrate slot 101 must be adaptively adjusted to improve the consistency of epitaxial layer growth on the surface of the substrate 200 to be processed.

[0046] Although the tray 100 rotates along the X direction, the substrate 200 to be processed located in the substrate slot 101 moves in the radial direction away from the center O of the tray under the action of centrifugal force, so that the distance between the side wall of the substrate slot 101 of the proximal section 101b and the substrate to be processed is relatively far. However, since the substrate 200 to be processed has a notch 201, the substrate 200 to be processed around the notch 201 is not easy to slide after contacting the distal section 101a. Moreover, since the distance R1 from the first compensation section 101c to the slot center O1 is greater than the distance R2 from the proximal section 101b to the slot center O1, the difference between the distance from the side wall of the substrate 200 to be processed to the first compensation section 101c and the distance to the proximal section 101b is reduced, which is beneficial to reducing the difference in heating effects of various areas of the side wall of the substrate slot 101 on the edge of the substrate 200 to be processed, and is beneficial to improving the consistency of growing the epitaxial layer at the edge of the substrate 200 to be processed.

[0047] In this embodiment, the difference between the first distance R1 and the second distance R2 is 0.1 mm to 2 mm. The difference between the first distance R1 and the second distance R2 is neither too large nor too small, so that after the substrate 200 to be processed deviates from the center O of the tray under the action of centrifugal force and contacts the distal segment 101a through the notch 201, the distance difference between the sidewalls of the first compensation segment 101c, the sidewalls of the proximal segment 101b, and the sidewalls of the distal segment 101a and the sidewalls of the substrate 200 to be processed is small. Therefore, the heating effects of the sidewalls of the first compensation segment 101c, the sidewalls of the proximal segment 101b, and the sidewalls of the distal segment 101a on the sidewalls of the substrate 200 to be processed are small, which is conducive to improving the consistency of the epitaxial layer growth at the edge of the substrate 200 to be processed.

[0048] In this embodiment, the depth of the first compensation section 101c is 0.5 mm to 2 mm. The depth of the first compensation section 101c can be equal to the depth of the proximal end 101b; or, the depth of the first compensation section 101c can be greater than the depth of the proximal end 101b; or, the depth of the first compensation section 101c can be less than the depth of the proximal end 101b. When the depth of the first compensation section 101c can be equal to the depth of the proximal end 101b, the difference between the first distance R1 and the second distance R2 can be adjusted to make the distance between the substrate to be processed and the first compensation section 101c of the substrate slot 101 equal to the distance between the substrate to be processed and the proximal section 101b of the substrate slot 101, thereby improving the temperature uniformity of the edge area of ​​the substrate to be processed. In addition, the depth of the first compensation section 101c and the difference between the first distance R1 and the second distance R2 can be adjusted to ensure better heating uniformity of the substrate to be processed in the first compensation section 101c and the proximal section 101b.

[0049] In this embodiment, the distance R2 from the distal segment 101 a to the slot center O1 is equal to the distance R2 from the proximal segment 101 b to the slot center O1 .

[0050] In this embodiment, there are two first compensation segments 101c between the distal segment 101a and the proximal segment 101b, and the two first compensation segments 101c are mirror-symmetrically distributed on both sides of the straight line where the tray center O-slot center O1 is located.

[0051] Figure 6 yes Figure 1 Schematic diagram of the structure of another substrate slot.

[0052] Please refer to Figure 6 A plurality of first compensation segments 101c are provided between the distal segment 101a and the proximal segment 101b.

[0053] In this embodiment, four first compensation segments 101c are taken as an example for explanation. The four first compensation segments 101c are mirror-distributed on both sides of the straight line where the tray center O-slot center O1 is located. The significance of setting two first compensation segments 101c between the distal segment 101a and the proximal segment 101b is that the area between the distal segment 101a and the proximal segment 101b is most likely to contact with the substrate to be processed or be too close. Setting multiple first compensation segments 101c between the distal segment 101a and the proximal segment 101b is conducive to more precise control of the distance from the side wall of the substrate slot 101 between the distal segment 101a and the proximal segment 101b to the substrate to be processed, thereby reducing the difference in the distance from each area of ​​the side wall of the substrate slot 101 to the side wall of the substrate to be processed, which is conducive to improving the consistency of the heating effect of the tray 100 on the edge of the substrate to be processed in each area around the substrate slot 101, thereby improving the consistency of the epitaxial layer growth at the edge of the substrate to be processed.

[0054] In other embodiments, the number of the first compensation segments between the distal segment and the proximal segment is greater than two.

[0055] Figure 7 yes Figure 1 A schematic structural diagram of another substrate slot.

[0056] In this embodiment, the distal segment 101a further includes a second compensation segment 101d. The distance between the second compensation segment 101d and the slot center O1 is a third distance R3, and the third distance R3 is greater than the second distance R2.

[0057] In this embodiment, a second compensation segment 101d is provided in the distal segment 101a, and the distance R3 from the second compensation segment 101d to the groove center O1 is greater than the second distance R2. This is significant in that when the notch of the substrate to be processed is too close to the distal segment 101a, the distance R3 from the second compensation segment 101d to the groove center O1 is greater than the second distance R2, which is beneficial for reducing the difference between the distance from the side wall of the distal segment 101a to the substrate to be processed and the distance from the proximal segment 101b to the substrate to be processed, thereby reducing the difference in heating of the substrate to be processed by the side wall of the distal segment 101a and the side wall of the proximal segment 101b, and improving the consistency of growing the epitaxial layer at the edge of the substrate to be processed.

[0058] Figure 8 It is a structural schematic diagram of a chemical vapor deposition device of the present invention.

[0059] Please refer to Figure 8 , reaction chamber 300; the above-mentioned tray located in the reaction chamber 300.

[0060] The tray includes: a tray 100, which rotates along its central axis and is provided with a plurality of substrate slots 101, each of the substrate slots 101 includes a distal segment away from the central axis, a proximal segment close to the central axis and a first compensation segment located between the distal segment and the proximal segment, the proximal segment of the substrate slot 101 has a slot center, the distance from the first compensation segment to the slot center is a first distance, the distance from the proximal segment to the slot center is a second distance, and the first distance is greater than the second distance. The substrate slot 101 is used to accommodate the substrate to be processed. When the tray 100 rotates along the X direction, the substrate to be processed is easy to move in the direction away from the central axis under the action of centrifugal force. Since the substrate to be processed has a notch, and the notch is facing the distal section of the substrate slot 101, the notch is easy to contact with the distal section and is not easy to slide. In addition, since the distance from the first compensation section to the center of the slot is greater than the distance from the proximal section to the center of the slot, the difference between the distance from the side wall of the substrate to be processed to the first compensation section and the distance to the proximal section is reduced, which is beneficial to reducing the difference in heating effect of various areas of the side wall of the substrate slot 101 on the substrate to be processed, and is beneficial to improving the consistency of growing the epitaxial layer at the edge of the substrate to be processed.

[0061] In this embodiment, the chemical vapor deposition device is a metal organic compound chemical vapor deposition device.

[0062] In other embodiments, other types of chemical vapor deposition devices may be used.

[0063] In this embodiment, the system further comprises: a heating device for heating the tray 100 ; a gas shower head 301 located in the reaction chamber 300 and arranged opposite to the tray; and a gas delivery device 302 for delivering reaction gas into the gas shower head 301 .

[0064] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A tray for a chemical vapor deposition device, characterized in that: include: A tray is rotatable along its central axis and is provided with a plurality of substrate slots, wherein the substrate slots are used to accommodate substrates to be processed, each of the substrate slots includes a distal segment away from the central axis, a proximal segment close to the central axis, and a first compensation segment located between the distal segment and the proximal segment, the substrate slot has a slot center, the distance from the first compensation segment to the slot center is a first distance, the distance from the proximal segment to the slot center is a second distance, the first distance is greater than the second distance, and the second distance is greater than the diameter of the substrate to be processed, the substrate to be processed has a notch, and the notch faces the distal segment. When the tray rotates along its central axis, the substrate to be processed is not restricted by the proximal segment, and under the action of centrifugal force, the substrate to be processed around the notch contacts the distal segment, and the first compensation segment is located between the proximal segment and the contact point.

2. The pallet according to claim 1, wherein: The centers of the plurality of substrate slots form a circle, and the center of the circle coincides with the center of the tray.

3. The pallet according to claim 1, wherein: The centers of the substrate slots form a plurality of concentric circles, and the centers of the concentric circles coincide with the center of the tray.

4. The pallet according to claim 1, wherein: The number of the first compensation segments between the distal segment and the proximal segment is one or more.

5. The pallet according to claim 1, wherein: The distal segment further includes a second compensation segment, and the distance from the second compensation segment to the center of the slot is a third distance, and the third distance is greater than the second distance.

6. The pallet according to claim 1, wherein: The difference between the first distance and the second distance is 0.1 mm to 2 mm.

7. The tray according to claim 1, wherein: The depth of the first compensation section is 0.5 mm to 2 mm.

8. The pallet according to claim 1, wherein: The material of the tray includes: graphite or silicon carbide.

9. A chemical vapor deposition device, characterized in that: include: reaction chamber; The tray according to any one of claims 1 to 8, located in the reaction chamber.

10. The chemical vapor deposition apparatus according to claim 9, wherein: The chemical vapor deposition device includes: a metal organic compound chemical vapor deposition device.

11. The chemical vapor deposition apparatus according to claim 9, wherein: Also includes: A heating device is used to heat the tray; a gas shower head is located in the reaction chamber and is arranged opposite to the tray; and a gas delivery device is used to deliver reaction gas to the gas shower head.

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