A fast linear regulation driving circuit for H bridge in probe power supply

Abstract

The invention belongs to the technical field of circuit design of tokamak devices, and specifically relates to an H-bridge fast linear regulation driving circuit in a probe power supply, comprising an output positive and negative direction identification module, an A and B tube conduction control module, a C and D tube conduction control module, an A and B tube conduction interlocking control module and a C and D tube conduction interlocking control module which are electrically connected in sequence; the technical problem solved by the invention is to provide fast linear regulation of the H-bridge in a high-frequency four-quadrant arbitrary waveform output power supply solution, and at the same time realize reliable interlocking of the conduction states of two MOSFET tubes in the same bridge arm, that is, only one switch tube is turned on at the same time to avoid output short circuit.

Description

Technical Field

[0001] The invention belongs to the technical field of circuit design of tokamak devices, and in particular relates to an H-bridge fast linear regulation drive circuit in a probe power supply. Background Art

[0002] In a fusion tokamak device, the interaction between the probe and the plasma to measure the required parameters is one of the basic means of plasma diagnostics.

[0003] In addition to single probe, the main probe theoretical models now include double probe, triple probe, etc.

[0004] For a single probe, a specific voltage is applied between the probe and a reference electrode (usually a conductor with a large contact area with the plasma, such as the device wall, etc.), the current on the probe is detected, a volt-ampere characteristic curve is drawn, and the plasma parameters are then calculated.

[0005] For the dual probe, it is a probe combination composed of two probes in an overall suspended state. By applying a voltage of arbitrary waveform between the two probes, the current of the two probes can also be detected, and the dual probe volt-ampere characteristic curve can be drawn to obtain the corresponding electron temperature and electron density.

[0006] Due to the complex behavior of plasma, it is necessary to quickly scan the entire voltage range in the shortest possible time and measure the change in current. In order to achieve high-precision measurement of the plasma state, the volt-ampere characteristic curve is accurately drawn near the zero point, which requires a smooth transition near the zero point of the power supply output.

[0007] The adjustable power supplies currently available on the market basically use digital quantity controlled H-bridge inverter output.

[0008] First, the digital control method has a slow control speed and cannot meet the requirements of high-bandwidth output. Secondly, in order to prevent the upper and lower tubes from being turned on at the same time in the traditional H-bridge inverter circuit control, a dead zone needs to be set on the upper and lower tubes, which results in a waveform output that cannot transition smoothly. At the same time, due to the load characteristics, the device needs to work in absorption mode, which other conventional power supplies do not have. Summary of the invention

[0009] In view of the above shortcomings, the main purpose of the present invention is to provide an H-bridge fast linear adjustment drive circuit in a probe power supply. The technical problem solved is to provide fast linear adjustment of the H-bridge in a high-frequency four-quadrant arbitrary waveform output power supply solution, and at the same time achieve reliable interlocking of the conduction states of the two MOSFET tubes in the same bridge arm, that is, only one switch tube is turned on at the same time to avoid output short circuit.

[0010] The technical solution of the present invention is as follows:

[0011] An H-bridge fast linear regulation driving circuit in a probe power supply comprises an output positive and negative direction identification module, an A and B tube conduction control module, a C and D tube conduction control module, an A and B tube conduction interlocking control module and a C and D tube conduction interlocking control module which are electrically connected in sequence;

[0012] The comparator input of the output positive and negative identification module is connected to the given Uref through R10, the "positive" output end is connected to the "input two" of the two-input NAND gate of the A and B tube conduction control module, the "negative" output end is connected to the "input two" of the two-input NAND gate of the C and D tube conduction control module, the in-phase amplifier circuit input of the A and B tube conduction control module and the inverting amplifier circuit input of the C and D tube conduction control module are connected to the PID adjustment "-UK" through R1; the in-phase amplifier circuit output and the two-input NAND output ends of the A and B tube conduction control module are respectively connected to the gate of the MOSFET tube M1 of the A and B tube conduction interlocking control module 4 through R5, and are connected to the cathode of the voltage regulator tube ZD1 and the gate of M2; the inverting amplifier circuit output and the two-input NAND output ends of the C and D tube conduction control module are respectively connected to the gate of the MOSFET tube M3 of the C and D tube conduction interlocking control module through R5, and are connected to the cathode of ZD1 and the gate of M4.

[0013] The output positive and negative direction identification module is composed of a comparator for distinguishing the positive and negative of a given Uref, and outputting a high or low signal to control the conduction of tube A or tube C.

[0014] The A and B tube conduction control module is composed of a common-phase amplifier circuit and a two-input NAND gate; the common-phase amplifier input end is connected to "-UK", and the output end is connected to the "input one" end of the two-input NAND gate through D3 and R7.

[0015] After the power supply is closed-loop, its output dynamic regulation control relies on PID regulation. "-UK" is the output of PID, which passes through the same-phase amplifier and the GB of the A and B tube conduction interlocking control module to control the H-bridge B tube; after the positive and negative judgment of Uref, the two-input NAND gate outputs the A and B tube conduction interlocking control module and controls the A tube through GA.

[0016] The C and D tube conduction control module is composed of an inverting amplifier circuit and a NAND gate; the input end of the inverting amplifier is connected to "-UK", and the output end is connected to the "input one" end of the two-input NAND gate through D3 and R7.

[0017] After the power supply is closed-loop, its output dynamic regulation control relies on PID regulation. "-UK" is the PID power supply closed-loop PID regulation output value. After amplification by the reverse amplifier, it is connected through the C and D tubes and the GB of the interlocking control module controls the H-bridge D tube; after the positive and negative judgment of Uref, it is output through the two-input NOT gate and the GC of the interlocking control module controls the H-bridge C tube.

[0018] The A and B tube conduction interlocking control module is composed of two switch tubes MOSFET-M1 and M2, a conduction resistor and a voltage regulator tube; the source of the switch tube M1 is connected in parallel with R4 and C1, and then connected in series with R3 and VCC2, the gate of M1 is connected with R5 and R6, and the drain of M1 outputs GB; the drain of M2 is connected to the equipotential body ground, and the source of M2 is connected to the drain of M1; the anode of the voltage regulator tube ZD1 is output through R9 to obtain GA; when "-UK" is greater than 0 after being amplified by the operational amplifier of the A and B tube conduction control module, the MOSFET tube M1 is turned on, and the conduction resistor generates sufficient driving current; when Uref is positively judged and the output is greater than 0 through the two-input NAND gate of the A and B tube conduction control module, the H-bridge A tube is turned on, and the MOSFET tube M2 is turned on at the same time, and the H-bridge B tube drive is blocked by the pull-down, so as to avoid the up and down of the H-bridge circuit and the direct connection of the A and B tubes.

[0019] The C and D tube conduction interlocking control module is composed of two switch tubes MOSFET-M3 and M4, a conduction resistor and a voltage regulator tube; the source of the switch tube M3 is connected in parallel with C1 through R4 and then connected in series with R3 and VCC2, the gate of M3 is connected with R5 and R6, and the drain of M3 outputs GD; the drain of M4 is connected to the equipotential body ground, and the source of M4 is connected to the drain of M3; the anode of the voltage regulator tube ZD1 is output through R9 to obtain GC to control the H-bridge C tube; when "-UK" is greater than 0 after being amplified by the operational amplifier of the C and D tube conduction control module, the MOSFET tube M3 is turned on, and the conduction resistor generates sufficient driving current; when Uref is negatively judged and the output is greater than 0 through the two-input NAND gate of the C and D tube conduction control module, the H-bridge C tube is turned on, and the MOSFET tube M4 is turned on at the same time, and the H-bridge D tube drive is pulled down to block, thereby avoiding the up and down of the H-bridge circuit and the direct connection of the C and D tubes.

[0020] The beneficial effects of the present invention are:

[0021] The output of arbitrary waveform, high bandwidth, and smooth transition of the output zero point avoid the dead zone problem near the zero point of the output waveform of the traditional H-bridge power supply, thereby achieving smooth switching between energy absorption and output. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is the post-stage H-bridge circuit of the present invention;

[0023] Figure 2 The invention relates to a post-stage H-bridge high-speed linear regulation driving circuit.

[0024] In the figure: 1. Output positive and negative direction identification module; 2. A and B tube conduction control module; 3. C and D tube conduction control module; 4. A and B tube conduction interlocking control module; 5. C and D tube conduction interlocking control module. DETAILED DESCRIPTION

[0025] The present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] An H-bridge fast linear regulation drive circuit in a probe power supply comprises an output positive and negative direction identification module 1, an A and B tube conduction control module 2, a C and D tube conduction control module 3, an A and B tube conduction interlocking control module 4 and a C and D tube conduction interlocking control module 5 which are electrically connected in sequence.

[0027] The comparator input of the output positive and negative identification module 1 is connected to the given Uref through R10, the "positive" output is connected to the "input two" of the two-input NAND gate of the A and B tube conduction control module 2, the "negative" output is connected to the "input two" of the two-input NAND gate of the C and D tube conduction control module 3, and the in-phase amplifier circuit input of the A and B tube conduction control module 2 and the inverting amplifier circuit input of the C and D tube conduction control module 3 are connected to the PID adjustment "-UK" through R1. The in-phase amplifier circuit output and the two-input NAND output of the A and B tube conduction control module 2 are respectively connected to the gate of the MOSFET tube M1 of the A and B tube conduction interlocking control module 4 through R5, and are connected to the cathode of the voltage regulator tube ZD1 and the gate of M2. The inverting amplifier circuit output and the two-input NAND output of the C and D tube conduction control module 3 are respectively connected to the gate of the MOSFET tube M3 of the C and D tube conduction interlocking control module 5 through R5, and are connected to the cathode of ZD1 and the gate of M4.

[0028] The output positive and negative direction identification module 1 is composed of a comparator for distinguishing the positive and negative of a given Uref, and outputting a high or low signal to control the conduction of tube A or tube C.

[0029] The A and B tube conduction control module 2 is composed of a common-phase amplifier circuit and a two-input NAND gate. The input end of the common-phase amplifier is connected to "-UK", and the output end is connected to the "input one" end of the two-input NAND gate through D3 and R7. After the power supply is closed, its output dynamic adjustment control relies on PID adjustment, and "-UK" is the output of PID, which passes through the common-phase amplifier and controls the H-bridge B tube through the GB of the A and B tube conduction interlocking control module 4. After the positive and negative judgment of Uref, the A and B tube conduction interlocking control module 4 is output through the two-input NAND gate to control the A tube through GA.

[0030] The C and D tube conduction control module 3 is composed of an inverting amplifier circuit and a NAND gate. The input end of the inverting amplifier is connected to "-UK", and the output end is connected to the "input one" end of the two-input NAND gate through D3 and R7. After the power supply is closed, its output dynamic adjustment control relies on PID adjustment, and "-UK" is the PID power supply closed loop PID adjustment output value. After amplification by the inverting amplifier, it is controlled by the GB of the C and D tube conduction interlocking control module 5 H-bridge D tube. After the positive and negative judgment of Uref, it is output through the two-input NAND gate and the GC of the C and D tube conduction interlocking control module 5 to control the H-bridge C tube.

[0031] The A and B tube conduction interlock control module 4 is composed of two switch tubes MOSFET-M1 and M2, a conduction resistor and a voltage regulator tube. The source of the switch tube M1 is connected in parallel with R4 and C1, and then connected in series with R3 and VCC2. The gate of M1 is connected to R5 and R6, and the drain of M1 outputs GB. The drain of M2 is connected to the equipotential body ground, and the source of M2 is connected to the drain of M1; the anode of the voltage regulator tube ZD1 is output through R9 to obtain GA. When "-UK" is greater than 0 after being amplified by the operational amplifier of the A and B tube conduction control module 2, the MOSFET tube M1 is turned on, and the conduction resistor generates sufficient driving current. After Uref is positively judged, when the output of the two-input NAND gate of the A and B tube conduction control module 2 is greater than 0, the H-bridge A tube is turned on, and the MOSFET tube M2 is turned on at the same time. The H-bridge B tube drive is blocked by the pull-down, avoiding the up and down of the H-bridge circuit, and the A and B tubes are directly connected.

[0032] The C and D tube conduction interlock control module 5 is composed of two switch tubes MOSFET-M3 and M4, a conduction resistor and a voltage regulator tube. The source of the switch tube M3 is connected in parallel with C1 through R4 and then connected in series with R3 and VCC2. The gate of M3 is connected to R5 and R6, and the drain of M3 outputs GD. The drain of M4 is connected to the equipotential body ground, and the source of M4 is connected to the drain of M3; the anode of the voltage regulator tube ZD1 is output through R9 to obtain GC to control the H-bridge C tube. When "-UK" is greater than 0 after being amplified by the C and D tube conduction control module 3 operational amplifier, the MOSFET tube M3 is turned on, and the conduction resistor generates sufficient driving current. After Uref is negatively judged, when the output of the two-input NAND gate of the C and D tube conduction control module 3 is greater than 0, the H-bridge C tube is turned on, and the MOSFET tube M4 is turned on at the same time, and the H-bridge D tube drive is pulled down to block, thereby avoiding the direct connection of the upper and lower (C, D) tubes of the H-bridge circuit.

[0033] The specific working mode of the power supply H-bridge circuit is:

[0034] When the power supply operates in the first and third quadrants, the upper two switch tubes (bridge arm A tube and bridge arm C tube) of the H-bridge circuit operate in the on or off state only by the polarity of the voltage given value; the lower two switch tubes (bridge arm B tube and bridge arm D tube) of the H-bridge circuit operate in a high-speed bidirectional linear regulation state determined by the value of the feedback control voltage UK.

[0035] When the H-bridge circuit operates in the second and fourth quadrants, that is, in the absorption mode, the upper two switching tubes of the H-bridge circuit are determined by the polarity of the voltage given value to determine whether they are operating in the on state, and the state of the turned-off switching tube is interlocked with the state of the other switching tube in the same bridge arm (bridge arm A tube and bridge arm B tube are not turned on at the same time; bridge arm C tube and bridge arm D tube are not turned on at the same time); the lower two switching tubes of the H-bridge circuit (bridge arm B tube and bridge arm D tube) are determined by the value of the feedback control voltage UK to operate in a high-speed bidirectional chopping state.

[0036] When Uref>0, the power supply needs positive output, and PID adjustment "-UK" <0. Then:

[0037] i) Ugs of MOSFET tube M1 is less than 0, so M1 is not conducting. At the same time, since Uref is greater than 0, after the NOT gate and NAND gate processing, Ugs of MOSFET tube M2 is greater than 0, so M2 is conducting. At this time, GA is high, and GB is pulled low. Therefore, tube A of the H bridge of the main circuit is conducting, and tube B is not conducting.

[0038] ii) Ugs>0 of MOSFET tube M3, M3 is turned on, and GD is high. At the same time, because Uref>0, after the NOT gate and NAND gate processing, Ugs<0 of MOSFET tube M4, M4 is not turned on, and GC is low. Therefore, the D tube of the H bridge of the main circuit is turned on, and the C tube is not turned on. When Uref<0, the power supply needs negative output, and the PID adjustment "-UK">0. Then:

[0039] i) Ugs of MOSFET tube M1>0, M1 is turned on. At the same time, because Uref<0, after the NOT gate and NAND gate processing, Ugs of MOSFET tube M2<0, M2 is not turned on. At this time, GA is low, and GB is low. Therefore, the A tube of the main circuit H bridge is not turned on, and the B tube is turned on.

[0040] ii) Ugs of MOSFET tube M3 is less than 0, M3 is not conducting, and GD is low at this time. At the same time, because Uref is less than 0, after the NOT gate and NAND gate processing, Ugs of MOSFET tube M4 is greater than 0, M4 is conducting, and GC is high at this time. Therefore, the D tube of the H bridge of the main circuit is not conducting, and the C tube is conducting.

[0041] Considering that the minimum driving voltages of the small power MOSFET and the main power MOSFET are inconsistent, when the minimum driving voltage of the main power MOSFET is smaller than that of the small power MOSFET, it may cause the two main power MOSFETs in the same bridge arm to be directly connected. The voltage regulator ZD1 can solve this problem well.

[0042] Figure 2 The role of R3, R4 and C1 is to enable the small power MOSFET tube M1 / M3 to generate a large on-current in a short time, while the steady-state current can be clamped at a lower level. The large on-current generated by the small power MOSFET tube M1 / M3 is conducive to the rapid conduction of the main power switch tube, but it must be noted that the small power MOSFET tubes M1 and M2, M3 and M4 are directly connected, so the continuous large current may burn the small power MOSFET tube. The large transient on-current is mainly generated by R3, while the small steady-state current is mainly clamped by R4.

[0043] Note that in order to prevent R4 from affecting the drive current, the time constant formed by R4 and C1 needs to be much longer than the time it takes to generate the drive voltage.

Claims

1. An H-bridge fast linear regulation driving circuit in a probe power supply, comprising an output positive and negative direction identification module, an A and B tube conduction control module, a C and D tube conduction control module, an A and B tube conduction interlocking control module and a C and D tube conduction interlocking control module, which are electrically connected in sequence; Features: The comparator input of the output positive and negative identification module is connected to the given Uref through R10, the "positive" output end is connected to the "input two" of the two-input NAND gate of the A and B tube conduction control module, the "non" output end is connected to the "input two" of the two-input NAND gate of the C and D tube conduction control module, the in-phase amplifier circuit entrance of the A and B tube conduction control module and the inverting amplifier circuit entrance of the C and D tube conduction control module are connected to the PID adjustment "-UK" through R1; the in-phase amplifier circuit output and the two-input NAND output ends of the A and B tube conduction control module are respectively connected to the gate of the MOSFET tube M1 of the A and B tube conduction interlocking control module 4 through R5, and are connected to the cathode of the voltage regulator tube ZD1 and the gate of M2; the inverting amplifier circuit output and the two-input NAND output ends of the C and D tube conduction control module are respectively connected to the gate of the MOSFET tube M3 of the C and D tube conduction interlocking control module through R5, and are connected to the cathode of ZD1 and the gate of M4.

2. The H-bridge fast linear regulation driving circuit in a probe power supply as claimed in claim 1, characterized in that: The output positive and negative direction identification module is composed of a comparator for distinguishing the positive and negative of a given Uref, and outputting a high or low signal to control the conduction of tube A or tube C.

3. The H-bridge fast linear regulation driving circuit in a probe power supply as claimed in claim 1, characterized in that: The A and B tube conduction control module is composed of a common-phase amplifier circuit and a two-input NAND gate; the common-phase amplifier input end is connected to "-UK", and the output end is connected to the "input one" end of the two-input NAND gate through D3 and R7.

4. The H-bridge fast linear regulation driving circuit in a probe power supply as claimed in claim 2, characterized in that: After the power supply is closed-loop, its output dynamic regulation control relies on PID regulation. "-UK" is the output of PID, which is controlled by GB of the H-bridge B tube through the common-phase amplifier and the A and B tube conduction interlocking control module; after the positive and negative judgment of Uref, it is output through the two-input NAND gate and the A and B tube conduction interlocking control module controls the A tube through GA.

5. The H-bridge fast linear regulation driving circuit in a probe power supply as claimed in claim 1, characterized in that: The C and D tube conduction control module is composed of an inverting amplifier circuit and a NAND gate; the input end of the inverting amplifier is connected to "-UK", and the output end is connected to the "input one" end of the two-input NAND gate through D3 and R7.

6. The H-bridge fast linear regulation driving circuit in a probe power supply as claimed in claim 5, characterized in that: After the power supply is closed-loop, its output dynamic regulation control relies on PID regulation. "-UK" is the PID power supply closed-loop PID regulation output value. After amplification by the reverse amplifier, it is connected through the C and D tubes and then the GB of the interlocking control module controls the H-bridge D tube. After the positive and negative judgment of Uref, it is output through the two-input NOT gate and then the GC of the C and D tubes is connected and then the C-bridge C tube is controlled.

7. The H-bridge fast linear regulation driving circuit in a probe power supply as claimed in claim 1, characterized in that: The A and B tube conduction interlocking control module is composed of two switch tubes MOSFET-M1 and M2, a conduction resistor and a voltage regulator tube; the source of the switch tube M1 is connected in parallel with R4 and C1, and then connected in series with R3 and VCC2, the gate of M1 is connected with R5 and R6, and the drain of M1 outputs GB; the drain of M2 is connected to the equipotential body ground, and the source of M2 is connected to the drain of M1; the anode of the voltage regulator tube ZD1 is output through R9 to obtain GA; when "-UK" is greater than 0 after being amplified by the operational amplifier of the A and B tube conduction control module, the MOSFET tube M1 is turned on, and the conduction resistor generates sufficient driving current; when Uref is positively judged and the output is greater than 0 through the two-input NAND gate of the A and B tube conduction control module, the H-bridge A tube is turned on, and the MOSFET tube M2 is turned on at the same time, and the H-bridge B tube drive is blocked by the pull-down, so as to avoid the up and down of the H-bridge circuit and the direct connection of the A and B tubes.

8. The H-bridge fast linear regulation driving circuit in a probe power supply as claimed in claim 1, characterized in that: The C and D tube conduction interlocking control module is composed of two switch tubes MOSFET-M3 and M4, a conduction resistor and a voltage regulator tube; the source of the switch tube M3 is connected in parallel with C1 through R4 and then connected in series with R3 and VCC2, the gate of M3 is connected with R5 and R6, and the drain of M3 outputs GD; the drain of M4 is connected to the equipotential body ground, and the source of M4 is connected to the drain of M3; the anode of the voltage regulator tube ZD1 is output through R9 to obtain GC to control the H-bridge C tube; when "-UK" is greater than 0 after being amplified by the operational amplifier of the C and D tube conduction control module, the MOSFET tube M3 is turned on, and the conduction resistor generates sufficient driving current; when Uref is negatively judged and the output is greater than 0 through the two-input NAND gate of the C and D tube conduction control module, the H-bridge C tube is turned on, and the MOSFET tube M4 is turned on at the same time, and the H-bridge D tube drive is blocked by the pull-down, so as to avoid the up and down of the H-bridge circuit and the direct connection of the C and D tubes.

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