A CdZnTe radiation detector

Abstract

The present invention discloses a CdZnTe radiation detector, which relates to the technical field of radiation detection and aims to solve the problem of low charge collection efficiency of existing radiation detectors. The CdZnTe radiation detector includes a plurality of CdZnTe crystals. A metal anode is provided on one surface of the crystal, and a metal cathode is provided on another surface that is not adjacent to the anode surface. Alternatively, metal anodes are provided on two non-adjacent surfaces of the crystal, and a metal cathode is provided on one or more surfaces that are adjacent to both anode surfaces. Alternatively, metal anodes are provided on the side surfaces of the crystal, and a metal cathode is provided on one or two bottom surfaces. Then, the plurality of CdZnTe crystals are bonded in a manner that the metal anodes are bonded to the metal anodes or the metal cathodes are bonded to the metal cathodes, so as to form a CdZnTe radiation detector with a three-dimensional electrode structure. The CdZnTe radiation detector provided by the present invention is used for radiation detection.

Description

Technical Field

[0001] The present invention relates to the technical field of radiation detection, and particularly to a CdZnTe radiation detector applied to radiation detection. Background Art

[0002] Cadmium zinc telluride (CdZnTe), a new generation of compound semiconductor, is an ideal material for manufacturing X-ray and low-energy γ-ray detectors. The CdZnTe detector can directly convert X-rays or γ-rays into electrical signals. Due to the direct conversion, its advantage is that there is no light scattering in the indirect conversion process of traditional scintillator detectors, so it has high spatial resolution and a simple structure.

[0003] However, since CdZnTe is a ternary compound material, there will be defects caused by component deviation and impurities during the preparation process. At the same time, due to the incomplete lattice during the preparation process, defects will also be caused. Therefore, the electrical properties of CdZnTe materials have not been effectively improved, which has a great impact on their wide application.

[0004] The performance of the CdZnTe detector is not only related to its material properties but also related to the subsequent device manufacturing process. Good device technology can make up for the deficiencies of the material. Especially in the case where it is difficult to improve the material properties, the device technology is particularly important. Since the CdZnTe crystal material is relatively brittle and very easy to break during micro-nano processing, few etching and other processes are carried out on the CdZnTe crystal. In this way, it is very difficult to directly fabricate a three-dimensional electrode detector structure similar to that of a silicon-based radiation detector from the CdZnTe crystal, thus unable to improve the charge collection efficiency of the CdZnTe radiation detector. Summary of the Invention

[0005] The purpose of the present invention is to provide a CdZnTe radiation detector that can effectively improve the charge collection efficiency of the CdZnTe radiation detector.

[0006] To achieve the above purpose, the present invention provides the following technical solutions:

[0007] A CdZnTe radiation detector includes a plurality of CdZnTe crystals;

[0008] The CdZnTe crystal is columnar; a metal anode is provided on one surface of the CdZnTe crystal, and the surface provided with the metal anode is denoted as the anode surface, and a metal cathode is provided on another surface not adjacent to the anode surface;

[0009] According to the method of fitting the metal anode to the metal anode or the metal cathode to the metal cathode, a plurality of the CdZnTe crystals are bonded to form a linear array, constituting a CdZnTe radiation detector.

[0010] The present invention also provides a CdZnTe radiation detector, comprising a plurality of CdZnTe crystals;

[0011] The CdZnTe crystals are columnar; metal anodes are provided on two non-adjacent surfaces of the CdZnTe crystals, and the surfaces provided with the metal anodes are denoted as anode surfaces, and metal cathodes are provided on one or more surfaces adjacent to both of the anode surfaces;

[0012] The plurality of CdZnTe crystals are bonded in a manner that the metal anodes are attached to each other to form a linear array, constituting the CdZnTe radiation detector.

[0013] The present invention also provides a CdZnTe radiation detector, comprising a plurality of CdZnTe crystals;

[0014] The CdZnTe crystals are columnar; metal anodes are provided on the side surfaces of the CdZnTe crystals, and metal cathodes are provided on one or two bottom surfaces;

[0015] The plurality of CdZnTe crystals are bonded in a manner that the metal anodes are attached to each other to form a planar array, constituting the CdZnTe radiation detector.

[0016] Compared with the prior art, in a CdZnTe radiation detector provided by the present invention, three placement positions of the metal anode and the metal cathode on the CdZnTe crystal are designed, and then the plurality of CdZnTe crystals are bonded in a manner that the metal anodes are attached to each other and the metal cathodes are attached to each other to form a linear array or a planar array, constituting a CdZnTe radiation detector with a three-dimensional electrode structure, which can avoid the problem of low charge collection efficiency caused by the inability to etch the CdZnTe crystal and thus unable to fabricate it into a three-dimensional electrode detector structure, and can effectively improve the charge collection efficiency of the CdZnTe radiation detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings:

[0018] Figure 1 is a top view of a conventional CdZnTe planar array detector.

[0019] Figure 2 is a cross-sectional view of a conventional CdZnTe planar array detector.

[0020] Figure 3This is the top view of a single CdZnTe crystal provided in the embodiment of the present invention.

[0021] Figure 4 This is the schematic cross-sectional view of the bonding of two CdZnTe crystals provided in Embodiment 1 of the present invention.

[0022] Figure 5 This is the schematic sectional view of the bonding of two CdZnTe crystals provided in Embodiment 1 of the present invention.

[0023] Figure 6 This is the schematic cross-sectional view of the bonding of multiple CdZnTe crystals provided in Embodiment 1 of the present invention.

[0024] Figure 7 This is the schematic cross-sectional view of the bonding of two CdZnTe crystals provided in Embodiment 2 of the present invention.

[0025] Figure 8 This is the schematic sectional view of the bonding of two CdZnTe crystals provided in Embodiment 2 of the present invention.

[0026] Figure 9 This is the schematic cross-sectional view of the bonding of multiple CdZnTe crystals provided in Embodiment 2 of the present invention.

[0027] Figure 10 This is the schematic cross-sectional view of the bonding of multiple CdZnTe crystals provided in Embodiment 3 of the present invention.

[0028] Figure 11 This is the schematic cross-sectional view of the bonding of multiple CdZnTe crystals provided in Embodiment 3 of the present invention.

[0029] Reference numerals:

[0030] 101 - Anode; 102 - Crystal; 103 - Cathode;

[0031] 1 - CdZnTe crystal; 2 - Metal anode; 3 - Metal cathode; 4 - Three-dimensional effective pixel. Detailed implementation manners

[0032] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0033] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0034] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined. "Several" means one or more unless otherwise specifically defined.

[0035] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present invention.

[0036] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and can be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] Embodiment 1:

[0038] The structure of a conventional radiation detector for radiation detection is as shown in Figure 1 and Figure 2 and includes an anode 101, a crystal 102, and a cathode 103. However, since the CdZnTe crystal material is relatively brittle and very easy to break during micro-nano processing, few etching processes are performed on the CdZnTe crystal. Based on this, it is very difficult to directly fabricate a three-dimensional electrode detector structure similar to that of a silicon-based radiation detector with the CdZnTe crystal, and thus the charge collection efficiency of the CdZnTe radiation detector cannot be improved. Please refer to Figure 3 , Figure 4 , Figure 5 and Figure 6, a CdZnTe radiation detector provided by an embodiment of the present invention includes a plurality of CdZnTe crystals 1. The CdZnTe crystals 1 are columnar, and the CdZnTe crystals 1 are high-resistance semiconductor crystals. A metal anode 2 is disposed on one surface of the CdZnTe crystal 1. The surface provided with the metal anode 2 is denoted as the anode surface, and a metal cathode 3 is disposed on another surface not adjacent to the anode surface. The plurality of CdZnTe crystals 1 are bonded in a manner that the metal anode 2 is bonded to the metal anode 2 or the metal cathode 3 is bonded to the metal cathode 3 to form a linear array, constituting the CdZnTe radiation detector.

[0039] After bonding multiple CdZnTe crystals 1 in a manner that the metal anode 2 is bonded to the metal anode 2 or the metal cathode 3 is bonded to the metal cathode 3, it can constitute a CdZnTe radiation detector with a three-dimensional electrode structure, realizing the three-dimensional electrode radiation detector structure of the CdZnTe crystal 1 in the overall structure, and avoiding the problem that it is difficult to directly fabricate a three-dimensional electrode detector structure similar to that of a silicon-based radiation detector due to processes such as etching of the CdZnTe crystal, thereby significantly improving the charge collection efficiency of the CdZnTe radiation detector. In addition, when the CdZnTe radiation detector works, a reverse bias voltage is applied to the metal cathode 3, and a zero potential is applied to the metal anode 2. When particles are incident on the CdZnTe radiation detector, a large number of electron carriers and hole carriers will be excited in the body of the CdZnTe radiation detector. Under the action of the applied electric field, the electron carriers will drift towards the metal anode 2, and the hole carriers will drift towards the metal cathode 3. After bonding multiple CdZnTe crystals 1 in a manner that the metal anode 2 is bonded to the metal anode 2 or the metal cathode 3 is bonded to the metal cathode 3, since the metal anode 2 and the metal cathode 3 are two non-adjacent surfaces, the distance between the metal anode 2 and the metal cathode 3 can be made relatively small. Only a small bias voltage is required to form a space charge region inside the CdZnTe crystal 1, and the drift time of the electron carriers and hole carriers is shorter, and the probability of being trapped by defects will be reduced, thereby improving the collection efficiency of the carriers.

[0040] As an alternative embodiment, a metal anode 2 is provided on one bottom surface of the CdZnTe crystal 1, and a metal cathode 3 is provided on the other bottom surface. Or when the CdZnTe crystal 1 is a straight prism with an even number of faces, a metal anode 2 is provided on one face of the CdZnTe crystal 1, and a metal cathode 3 is provided on the other face opposite to the anode face. Thus, the metal anode 2 and the metal cathode 3 can be respectively provided on the opposite faces of the CdZnTe crystal 1. Compared with the method of respectively providing the metal anode 2 and the metal cathode 3 on two non-adjacent faces, by adopting this setting method of the metal electrodes, after bonding multiple CdZnTe crystals 1 to form a CdZnTe radiation detector, the range where the CdZnTe radiation detector cannot detect particles is small, and thus the charge collection efficiency of the CdZnTe radiation detector can be further improved.

[0041] To enable those skilled in the art to more clearly understand the technical solution of this embodiment, the technical solution in the embodiment of the present invention will be specifically described below with reference to the accompanying drawings. It should be understood that the following description is only for explanation and is not intended to be limiting. Taking the CdZnTe crystal 1 as a cuboid, and a metal anode 2 and a metal cathode 3 are respectively provided on the opposite faces of the CdZnTe crystal 1 as an example, first, the face provided with the metal anode 2 is denoted as the anode face, and the face provided with the metal cathode 3 is denoted as the cathode face. As Figure 3 shown, it is a top view of a single CdZnTe crystal 1. A plurality of strip-shaped metal anodes 2 arranged at intervals are provided on one face of the CdZnTe crystal 1, and the plurality of metal anodes 2 are arranged along the side length direction of the anode face. A metal cathode 3 is provided on the other face opposite to the anode face. The metal cathode 3 can be a planar structure and can completely cover the entire cathode face. The thickness of the metal electrodes is between 100 nm and 1000 nm. The metal electrodes include the metal anode 2 and the metal cathode 3. It should be noted that this embodiment does not limit the number, shape, and position of the metal anode 2 on the anode face, nor does this embodiment limit the number, shape, and position of the metal cathode 3 on the cathode face.

[0042] Bond two CdZnTe crystals 1 in the way that the metal anode 2 is attached to the metal anode 2 and the electrode directions are mirror images of each other. As Figure 4 shown, on the surfaces of the two bonded CdZnTe crystals in contact with each other are a plurality of metal anodes 2, and there is a metal cathode 3 on each side of the two bonded CdZnTe crystals. The space on both sides of any one metal anode 2 and the two metal cathodes 3 on both sides together form a three-dimensional effective pixel 4. The three-dimensional effective pixel 4 is as shown by the dashed line part in Figure 4 . The two bonded CdZnTe crystals are a CdZnTe radiation detector with a three-dimensional electrode structure, which can significantly improve the charge collection efficiency of the CdZnTe radiation detector.

[0043] The CdZnTe radiation detector composed of two bonded CdZnTe crystals is sectioned along line B-B'. The sectional effect diagram is as Figure 5 shown. When the incident particles enter from the Figure 5 top surface shown, a large number of electron carriers and hole carriers will be excited in the body of the CdZnTe radiation detector. When the CdZnTe radiation detector works, a reverse bias voltage is applied to its metal cathode 3, and a zero potential is applied to the metal anode 2. In this way, the electron carriers will drift towards the metal anode 2 under the action of the applied electric field, and the hole carriers will drift towards the metal cathode 3. The CdZnTe radiation detector formed by the metal electrode setting method and bonding method described in this embodiment, in addition to having a three-dimensional electrode structure, can significantly improve the charge collection efficiency of the CdZnTe radiation detector, and its advantages are as follows: (1) Since the distance between the metal anode 2 and the metal cathode 3 of the CdZnTe crystal can be made relatively small, the CdZnTe radiation detector only needs a relatively small bias voltage to form a space charge region inside the CdZnTe crystal 1. (2) The distance between the metal anode 2 and the metal cathode 3 is relatively small, and the drift time of the electron carriers and hole carriers is shorter, so the probability of being trapped by defects will be lower, thereby improving the carrier collection efficiency and making it possible for the collected hole carriers to become available signals. (3) For this CdZnTe radiation detector, the effective thickness of CdZnTe for detecting ray particles (such as the Figure 5 w value shown) is not limited by the energy of the detected particles. Even if the effective thickness of CdZnTe for detecting ray particles is relatively thick, when low-energy ray particles enter the CdZnTe crystal 1, the drift distance of the excited electron-hole carriers does not increase. Therefore, the detection range of this radiation detector has stronger applicability.

[0044] As Figure 6 shown, multiple CdZnTe crystals are bonded in such a way that the metal anode 2 is bonded to the metal anode 2, the metal cathode 3 is bonded to the metal cathode 3, and all the metal anodes 2 are spatially parallel to obtain a three-dimensional electrode radiation detector. Using the bonding method described in this embodiment can avoid the problem that it is difficult to directly make a three-dimensional electrode detector structure similar to that of a silicon-based radiation detector due to the inability to etch the CdZnTe crystal and other processes, thereby improving the charge collection efficiency of the CdZnTe radiation detector.

[0045] It should be noted that regarding the specific parameters of the detector: the width of the metal anode 2, the thickness of the CdZnTe crystal 1 (i.e., the distance between the metal anode 2 and the metal cathode 3), the distance between the metal anodes 2 on the anode surface, the number of pixels, and the effective thickness of CdZnTe for detecting ray particles (such as Figure 5The shown w value) can be adjusted according to actual design requirements. In this embodiment, any surface can be selected as the particle incident surface, or any surface without a covered metal electrode can be selected as the particle incident surface, or the side where the crystal thickness is located can also be selected as the particle incident surface.

[0046] Embodiment 2:

[0047] This embodiment is used to provide a CdZnTe radiation detector, which includes a plurality of CdZnTe crystals 1, and the CdZnTe crystals 1 are columnar. Metal anodes 2 are arranged on two non-adjacent surfaces of the CdZnTe crystal 1. The surface provided with the metal anode 2 is denoted as the anode surface, and a metal cathode 3 is arranged on one or more surfaces adjacent to both anode surfaces. The plurality of CdZnTe crystals 1 are bonded in the manner of metal anode 2 fitting to metal anode 2 to form a linear array, constituting a CdZnTe radiation detector.

[0048] Different from Embodiment 1, in this embodiment, the arrangement positions of the metal anode 2 and the metal cathode 3 on the CdZnTe crystal 1 are changed. After bonding the plurality of CdZnTe crystals 1 in the manner of metal anode 2 fitting to metal anode 2, the formed CdZnTe radiation detector is still a radiation detector with a three-dimensional electrode structure, and can still avoid the problem that it is difficult to directly fabricate a three-dimensional electrode detector structure similar to a silicon-based radiation detector due to processes such as etching the CdZnTe crystal, thereby improving the charge collection efficiency of the CdZnTe radiation detector.

[0049] As an optional implementation manner, metal anodes 2 are arranged on both bottom surfaces of the CdZnTe crystal 1, and a metal cathode 3 is arranged on one or more side surfaces. Or when the CdZnTe crystal 1 is a straight prism with an even number of surfaces, metal anodes 2 are arranged on two opposite surfaces of the CdZnTe crystal 1, and a metal cathode 3 is arranged on one or more surfaces perpendicular to both anode surfaces, so that metal anodes 2 can be arranged on two opposite surfaces of the CdZnTe crystal 1. Compared with the method of arranging metal anodes 2 on two non-adjacent surfaces, by adopting this arrangement method of metal electrodes, after bonding multiple CdZnTe crystals 1 to form a CdZnTe radiation detector, the range where ions cannot be detected is small, and thus the charge collection efficiency of the CdZnTe radiation detector can be further improved.

[0050] To enable those skilled in the art to more clearly understand the technical solution of this embodiment, the technical solution in the embodiment of the present invention will be specifically described below with reference to the accompanying drawings. It should be understood that the following description is for explanation only and is not intended as a limitation. Taking the CdZnTe crystal 1 as a cuboid and metal anodes 2 being provided on the opposite faces of the CdZnTe crystal 1 as an example, metal anodes 2 grow on the opposite faces of each CdZnTe crystal 1, and a metal cathode 3 grows on a face adjacent to the common side of these two parallel anode faces. There is a gap between the metal anode 2 and the metal cathode 3. Two CdZnTe crystals 1 are bonded in a manner that the metal anode 2 is bonded to the metal anode 2 and the electrode directions are mirror-symmetrical, resulting in a CdZnTe radiation detector with a three-dimensional electrode structure. Its cross-sectional view is as shown in Figure 7 shown.

[0051] The CdZnTe radiation detector formed by bonding two CdZnTe crystals 1 is sectioned along the line C-C'. Its sectional effect diagram is as shown in Figure 8 shown. When incident particles enter from the top surface as shown in Figure 8 shown, a large number of electron-hole carriers will be excited inside the CdZnTe radiation detector. When the CdZnTe radiation detector works, a reverse bias voltage is applied to the metal cathode 3, and a zero potential is applied to the metal anode 2. In this way, electron carriers will drift towards the metal anode 2 under the action of the applied electric field, and hole carriers will drift towards the metal cathode 3. The CdZnTe radiation detector formed by using the metal electrode setting method and bonding method described in this embodiment, in addition to having a three-dimensional electrode structure and significantly improving the charge collection efficiency of the CdZnTe radiation detector, has the following advantages: (1) Since the crystal thickness of the CdZnTe crystal 1 can be made relatively small, the CdZnTe detector only requires a relatively small bias voltage to form a space charge region inside the CdZnTe crystal 1. (2) The crystal thickness of the CdZnTe crystal 1 is relatively thin, and the drift time of electron carriers is shorter, so the probability of being trapped by defects will be lower, thereby improving the collection efficiency of carriers. (3) The effective thickness of CdZnTe for detecting ray particles (such as the w value shown in Figure 5 shown) of this CdZnTe radiation detector is not limited by the energy of the detected particles. Even if the effective thickness of CdZnTe for detecting ray particles is relatively thick, when low-energy ray particles enter the CdZnTe crystal 1, the drift distance of the excited electron-hole carriers does not increase, so the detection range of this detector has stronger applicability. (4) Since the metal cathode 3 is transferred to the other side perpendicular to the metal anode 2, the arrangement of the metal anode 2 is more flexible and can also be designed more closely.

[0052] Multiple CdZnTe crystals 1 are bonded in a manner that the metal anode 2 is bonded to the metal anode 2 and all the metal anodes 2 are spatially parallel. The structure of the finally obtained radiation detector is as shown inFigure 9 As shown in the figure. By using the bonding method described in this embodiment, it is possible to avoid the problem that it is difficult to directly fabricate a three-dimensional electrode detector structure similar to a silicon-based radiation detector for CdZnTe crystals due to processes such as etching that cannot be performed on CdZnTe crystals, thereby improving the charge collection efficiency of CdZnTe radiation detectors.

[0053] Example 3:

[0054] This embodiment is used to provide a CdZnTe radiation detector, which includes a plurality of CdZnTe crystals 1, and the CdZnTe crystals 1 are columnar. Metal anodes 2 are provided on the side surfaces of the CdZnTe crystals 1, and metal cathodes 3 are provided on one or two bottom surfaces. The plurality of CdZnTe crystals 1 are bonded in a manner that the metal anodes 2 are in contact with each other to form a surface array, constituting a CdZnTe radiation detector.

[0055] Different from Example 1 and Example 2, in this embodiment, the installation positions of the metal anodes 2 and the metal cathodes 3 are changed. Still, the plurality of CdZnTe crystals 1 are bonded in a manner that the metal anodes 2 are in contact with each other. The CdZnTe radiation detector formed is still a radiation detector with a three-dimensional electrode structure, and it is still possible to avoid the problem that it is difficult to directly fabricate a three-dimensional electrode detector structure similar to a silicon-based radiation detector for CdZnTe crystals due to processes such as etching that cannot be performed on CdZnTe crystals, thereby improving the charge collection efficiency of CdZnTe radiation detectors.

[0056] As an alternative implementation, as Figure 10 shown, the CdZnTe crystal 1 is a regular quadrangular prism, and each CdZnTe crystal 1 is a cuboid with two square bottom surfaces. Metal anodes 2 are grown on the four surfaces surrounding the square, and a metal cathode 3 is grown on another surface perpendicular to the four metal anodes 2. In this way, each CdZnTe crystal 1 can be bonded to a new CdZnTe crystal 1 around its perimeter, thereby constituting a surface array radiation detector. The region jointly formed by two CdZnTe crystals 1 is a three-dimensional effective pixel 4.

[0057] As Figure 11 shown, the CdZnTe crystal 1 is a regular hexagonal prism, and each independent CdZnTe crystal 1 is a column with two regular hexagonal bottom surfaces. Metal anodes 2 are grown on the six surfaces surrounding the regular hexagon, and a metal cathode 3 is grown on another surface perpendicular to the six metal anodes 2. In this way, each CdZnTe crystal 1 can be bonded to a new CdZnTe crystal 1 around its perimeter, thereby constituting a surface array radiation detector. The region jointly formed by two CdZnTe crystals 1 is a three-dimensional effective pixel 4.

[0058] When the CdZnTe crystal 1 adopts the two shapes of regular quadrangular prism or regular hexagonal prism, after bonding multiple CdZnTe crystals 1 to form a CdZnTe radiation detector, the range in which ions cannot be detected is minimized, and thus the charge collection efficiency of the CdZnTe radiation detector can be further improved.

[0059] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner.

[0060] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A CdZnTe radiation detector, characterized in that, it includes a plurality of CdZnTe crystals; the CdZnTe crystals are columnar; metal anodes are arranged on two non-adjacent surfaces of the CdZnTe crystals, and the surfaces provided with the metal anodes are denoted as anode surfaces, and metal cathodes are arranged on one or more surfaces adjacent to both of the anode surfaces; According to the way that the metal anodes are bonded to each other, a plurality of the CdZnTe crystals are bonded to form a linear array, constituting a CdZnTe radiation detector.

2. The CdZnTe radiation detector according to claim 1, characterized in that, the metal anodes are arranged on both bottom surfaces of the CdZnTe crystals, and the metal cathodes are arranged on one or more side surfaces.

3. The CdZnTe radiation detector according to claim 1, characterized in that, when the CdZnTe crystal is a straight prism with an even number of faces, the metal anodes are arranged on two opposite surfaces of the CdZnTe crystal, and the metal cathodes are arranged on one or more surfaces perpendicular to both of the anode surfaces.

4. A CdZnTe radiation detector, characterized in that, it includes a plurality of CdZnTe crystals; the CdZnTe crystals are columnar; metal anodes are arranged on the side surfaces of the CdZnTe crystals, and metal cathodes are arranged on one or two bottom surfaces; According to the way that the metal anodes are bonded to each other, a plurality of the CdZnTe crystals are bonded to form a planar array, constituting a CdZnTe radiation detector.

5. The CdZnTe radiation detector according to claim 4, characterized in that, the CdZnTe crystal is a regular quadrangular prism or a regular hexagonal prism.

6. The CdZnTe radiation detector according to claim 4, characterized in that, a plurality of spaced metal anodes are arranged on the anode surface.

7. The CdZnTe radiation detector according to claim 6, characterized in that, the plurality of metal anodes are arranged along the side length direction of the anode surface.

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