Intelligent Power Module

Abstract

The present invention relates to an intelligent power module, which blocks the heat of the power device transferred by the heat dissipation substrate by arranging a heat insulation layer between the circuit wiring layer where the driver chip is located and the heat dissipation substrate, thereby effectively reducing the temperature of the driver chip, thereby well solving the problem of unstable operation of the semiconductor element of the driver chip due to excessive temperature. Furthermore, a metal heat transfer layer is arranged between the insulating layers where the power device is installed, and the thermal conductivity of the metal heat transfer layer is higher than that of the insulating layer, so that the heat generated during the operation of the power device is quickly transferred to the insulating layer through the metal heat dissipation layer and finally to the metal heat dissipation substrate. Therefore, while improving the thermal conductivity of the power device, the heat generation of the driver chip is reduced, which is conducive to controlling the operating temperatures of the power device and the driver chip at reasonable temperature parameters at the same time, thereby improving the reliability and stability of the IPM operation.

Description

Technical Field

[0001] The invention relates to an intelligent power module, belonging to the technical field of power semiconductor devices. Background Art

[0002] Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technology. Intelligent power modules integrate power switching devices and high-voltage drive circuits, and have built-in fault detection circuits such as overvoltage, overcurrent and overheating. Existing IPM modules install the drive circuit and power switching devices on the same substrate. When the IPM module is working, the high temperature generated by the power switching device is transmitted to the driver chip in the drive circuit through the substrate. As the temperature of the driver chip increases, the electrons and holes involved in the conduction in the driver chip will increase and be significantly stimulated, the conductivity will increase, and the resistance will decrease, affecting the control IC parameter offset and control accuracy. High temperature also shortens the life of the driver chip. This affects the working life and reliability of the IPM module. Summary of the invention

[0003] The technical problem to be solved by the present invention is to solve the problem that in the existing IPM module, since the power switch device and the drive circuit are installed on the same substrate, the operating temperature of the drive chip of the drive circuit is too high, which affects its control accuracy and life.

[0004] Specifically, the present invention discloses an intelligent power module, comprising:

[0005] Heat dissipation substrate made of metal material;

[0006] An insulating layer and a heat-insulating layer are respectively arranged on the surface of the heat dissipation substrate;

[0007] A metal heat transfer layer is arranged on the surface of the insulating layer;

[0008] A circuit wiring layer, arranged on the heat insulation layer and the metal heat transfer layer, wherein the circuit wiring layer is provided with a plurality of pads;

[0009] An electronic component is arranged on the pad of the circuit wiring layer, the electronic component includes a power device and a driver chip, wherein the power device generates more heat than the driver chip, the power device is arranged on the circuit wiring layer corresponding to the metal heat transfer layer, and the driver chip is arranged on the circuit wiring layer corresponding to the heat insulation layer;

[0010] A plurality of pins, wherein the plurality of pins are arranged on at least one side of the heat dissipation substrate;

[0011] A sealing layer at least wraps one side of the heat dissipation substrate on which the circuit element is disposed, and one end of the pin is exposed from the sealing layer.

[0012] Optionally, the thermal conductivity of the heat-insulating layer is lower than the thermal conductivity of the insulating layer.

[0013] Optionally, the thermal insulation layer includes a middle thermal insulation body and upper and lower metal layers, the thermal insulation body is a FR-4 board, and the metal layers are copper foil.

[0014] Optionally, the stacked thickness of the insulating layer and the metal heat transfer layer is equal to the thickness of the heat insulation layer.

[0015] Optionally, the area of ​​the insulating layer is not less than the area of ​​the metal heat transfer layer.

[0016] Optionally, the heat insulating layer is provided with a through groove penetrating through the thickness thereof, and the insulating layer and the metal heat transfer layer are installed in the through groove.

[0017] Optionally, the IPM module further includes a plurality of bonding wires, wherein the bonding wires are connected between the plurality of electronic components, the circuit wiring layer, and the plurality of pins.

[0018] Optionally, the insulating layer is made of a resin material, and the resin material is filled with fillers of aluminum oxide and aluminum carbide.

[0019] Optionally, the filler is angular, spherical, or a mixture of angular and spherical shapes.

[0020] Optionally, the power devices are arranged close to each other, and the driving chip is arranged far away from the power devices.

[0021] The intelligent power module of the present invention comprises a heat dissipation substrate, an insulating layer, a heat insulation layer, a metal heat transfer layer, a circuit wiring layer, an electronic component, a plurality of pins and a sealing layer. By arranging a heat insulation layer between the circuit wiring layer where the driver chip is located and the heat dissipation substrate, the heat of the power device transferred by the heat dissipation substrate is blocked, thereby effectively reducing the temperature of the driver chip, so that the operating temperature of the driver chip can be maintained near room temperature, thereby well solving the problem of unstable operation of the semiconductor element of the driver chip due to excessive temperature. Furthermore, a metal heat transfer layer is also arranged between the insulating layers where the power device is installed, and the thermal conductivity of the metal heat transfer layer is higher than that of the insulating layer, so that the heat generated during the operation of the power device is quickly transferred to the insulating layer through the metal heat dissipation layer and finally to the metal heat dissipation substrate. Therefore, while improving the thermal conductivity of the power device, the heat generation of the driver chip is reduced, which is conducive to simultaneously controlling the operating temperatures of the power device and the driver chip under reasonable temperature parameters, thereby improving the reliability and stability of the IPM operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a top view of an IPM module according to an embodiment of the present invention;

[0023] Figure 2 for Figure 1 Sectional view along the X1-X1 direction;

[0024] Figure 3 for Figure 1 A cross-sectional view along the X2-X2 direction;

[0025] Figure 4 for Figure 2 Schematic diagram of the structure of the middle insulation layer;

[0026] Figure 5 A top view of an IPM module without a sealing layer according to an embodiment of the present invention;

[0027] Figure 6 A circuit block diagram of a driver chip of an IPM module according to an embodiment of the present invention;

[0028] Figure 7 The figure is a simplified schematic diagram of the IPM module according to an embodiment of the present invention.

[0029] Reference numerals:

[0030] Freewheeling diode 103 , IGBT 104 , sealing layer 105 , driving chip 106 , bonding wire 107 , circuit wiring layer 108 , insulating layer 109 , heat dissipation substrate 110 , metal heat transfer layer 112 , solder pad 114 , heat insulation layer 115 , pin 116 , heat insulation body 1151 , metal layer 1152 . DETAILED DESCRIPTION

[0031] It should be noted that, in the case where the structures or functions do not conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below based on examples.

[0032] The present invention proposes an intelligent power module, namely an IPM module, such as Figures 1 to 5 As shown, the IPM module includes a heat dissipation substrate 110 , an insulating layer 109 , a heat insulation layer 115 , a metal heat transfer layer 112 , a circuit wiring layer 108 , electronic components, a plurality of pins 116 and a sealing layer 105 .

[0033] The heat dissipation substrate 110 is made of a metal material, including an upper mounting surface and a lower heat dissipation surface, and can be a rectangular plate made of aluminum such as 1100, 5052, etc. The insulating layer 109 is formed by covering at least one surface of the heat dissipation substrate 110, and is made of a resin material such as epoxy resin, and is filled with fillers such as aluminum oxide and aluminum carbide inside the resin material to improve thermal conductivity. In order to improve thermal conductivity, the shape of these fillers can be angular. In order to avoid the risk of the fillers damaging the contact surface of the electronic components arranged on the surface thereof, the fillers can be spherical or a mixture of angular and spherical. The circuit wiring layer 108 can be formed by etching copper foil, or by printing a paste-like conductive medium. The conductive medium can be a conductive material such as graphene, solder paste, silver glue, etc. A plurality of pads 114 are provided on the circuit wiring layer 108 for mounting electronic components and pins 116. The pins 116 are fixedly electrically connected to the pads 114 at one edge of the heat dissipation substrate 110, and have the function of inputting and outputting signals to an external circuit connected to the IPM module. In this embodiment, as Figure 1 As shown, a plurality of pins 116 are led out from one side of the heat dissipation substrate 110, and in other implementations, they can also be led out from opposite sides of the heat dissipation substrate 110. The pins 116 are generally made of metals such as copper, and a nickel-tin alloy layer is formed on the copper surface by chemical plating and electroplating. The thickness of the alloy layer is generally 5 μm. The plating layer can protect the copper from corrosion and oxidation and improve weldability. The sealing layer 105 can be formed of resin, and can be molded using a thermosetting resin by a transfer mold or a thermoplastic resin by an injection mold. The sealing layer 105 has two packaging structures. One is that the sealing layer 105 covers the upper and lower surfaces of the heat dissipation substrate 110, covers the electronic components arranged on the heat dissipation substrate 110, and also covers the pins 116 arranged at one end of the heat dissipation substrate 110, which is a full-coverage method of the sealing layer 105; in the other packaging method, the sealing layer 105 covers the upper surface of the heat dissipation substrate 110, that is, covers the heat dissipation substrate 110, the electronic components and the pins 116 arranged at one end of the heat dissipation substrate 110, and the lower surface of the heat dissipation substrate 110, that is, the heat dissipation surface, is exposed to the sealing layer 105, thereby forming a semi-coverage method of the sealing layer 105. Figure 2 and Figure 3 The sealing layer 105 is shown as being half-wrapped.

[0034] The electronic components are arranged on the pads 114 of the circuit wiring layer 108, and the electronic components include power devices and driver chips 106, wherein the power devices include switch tubes such as IGBT104 (Insulated Gate Bipolar Transistor) or MOS tubes (metal oxide semiconductor), etc., and also include freewheeling diodes 103, which consume large power and generate large heat during operation, while the power consumed by the driver chip 106 is much smaller than that of the power devices, and the heat generated during operation is very low. Since the driver chip 106 contains multiple miniature semiconductor components inside, the operating temperature is much lower than that of the power devices. During the operation of the power device, the large amount of heat generated by the power device is transferred to the driver chip 106 through the heat dissipation substrate 110, causing its temperature to rise suddenly, thereby affecting the working stability of the driver chip 106. To solve this problem, the insulating layer 109 is only set in the partial area of ​​the heat dissipation substrate 110 where the power device is installed, and the insulating layer 109 is not set in the partial area of ​​the heat dissipation substrate 110 where the driver chip 106 is installed. That is, the insulating layer 109 is arranged between the pad 114 of the circuit wiring layer 108 where the power device is located and the heat dissipation substrate 110, and the heat insulation layer 115 is arranged between the pad 114 of the circuit wiring layer 108 where the driver chip 106 is located and the heat dissipation substrate 110, so as to replace the insulating layer 109 arranged between the driver chip 106 and the heat dissipation substrate 110 in the prior art. Since the thermal conductivity of the insulating layer 109 is much higher than that of the heat insulation layer 115, the heat dissipation substrate 110 can be better blocked from transmitting heat from the power device, thereby effectively reducing the temperature of the driver chip 106, so that the operating temperature of the driver chip 106 can be maintained near room temperature. In this way, the problem of unstable operation of the semiconductor element of the driver chip 106 caused by excessive temperature is well solved. Furthermore, a metal heat transfer layer 112 is arranged between the insulating layer 109 where the power device is installed. The thermal conductivity of the metal heat transfer layer 112 is higher than that of the insulating layer 109, so that the heat generated during the operation of the power device is quickly transferred to the insulating layer 109 through the metal heat dissipation layer and finally to the metal heat dissipation substrate 110. Therefore, while improving the thermal conductivity of the power device, the heat generation of the driver chip 106 is reduced, which is conducive to controlling the operating temperatures of the power device and the driver chip 106 at reasonable temperature parameters, thereby improving the reliability and stability of the IPM operation. Moreover, since the heat transfer of the functional device heat generation is enhanced and the heat generation of the driver chip 106 is reduced, the distribution density of the electronic components of the entire IPM module can be increased, which is conducive to the miniaturization of the IPM module.Furthermore, in the relevant specification sheet of the IPM module for the driver chip 106, all parameters are obtained by testing at room temperature of 25°C. Therefore, the closer the operating temperature of the driver chip 106 is to room temperature, the more convenient it is for engineers to refer to the parameters in the specification sheet to design the relevant circuits of the IPM module, thereby reducing the design requirements of engineers.

[0035] In some embodiments of the present invention, Figure 4 As shown, the heat insulating layer 115 includes a middle heat insulating body 1151 and metal layers 1152 respectively connected to the upper and lower surfaces of the heat insulating body 1151, wherein the heat insulating body 1151 has a lower thermal conductivity than the insulation layer 109. The thicker middle part is the heat insulating body 1151, whose thermal conductivity is lower than that of the insulation layer 109, and thus has poor heat transfer capability relative to the insulation layer 109, while the metal layers 1152 arranged on the upper and lower surfaces of the heat insulating body 1151 are relatively thin, such as copper foil layers, and pads may be arranged on the surface thereof, so that the upper and lower surfaces of the heat insulating body 1151 are fixed between the pads 114 of the circuit wiring layer 108 and the heat dissipation substrate 110 by welding. Moreover, due to the low thermal conductivity of the heat insulating body 1151, the heat generated on the heat dissipation substrate 110 is not easily blocked by the heat insulating body 1151, and is not easily transmitted to the driver chip 106, thereby effectively reducing the operating temperature of the driver chip 106. Specifically, the insulation body 1151 can use a glass cloth substrate of FR-4 board with a thermal conductivity of only 0.2W / mK. The existing insulation layer 109 has a thermal conductivity of 2.0W / mK, which is much smaller than the thermal conductivity of the relative insulation layer 109. Therefore, the thermal conductivity capacity of the relative insulation layer 109 is weak, and thus it can play a better thermal isolation role.

[0036] In some embodiments of the present invention, the metal heat transfer layer 112 is a heat sink made of copper. Since copper has excellent thermal conductivity, it can improve the ability to conduct heat generated by power devices. Furthermore, the area of ​​the insulating layer 109 is not less than the area of ​​the metal heat transfer layer 112. This ensures that the metal heat transfer layer 112 and the heat dissipation substrate 110 are sufficiently insulated by the insulating layer 109.

[0037] In some embodiments of the present invention, the heat insulating layer 115 is provided with a through groove running through the thickness thereof, and the insulating layer 109 and the metal heat conducting layer 112 are installed in the through groove. Figure 2 and Figure 3As shown, the circuit wiring layer 108 corresponding to the thermal insulation layer 115 can be installed with other passive components such as resistors, capacitors and other electronic components in addition to the active components with low heat generation such as the driver chip 106, so that the area occupied by the thermal insulation layer 115 is relatively large. In order to facilitate processing and assembly, first prepare a whole piece of thermal insulation layer 115, and then open a plurality of through grooves running through the thickness of the thermal insulation layer 115, and the shape of each through groove is adapted to the shape of the insulating layer 109 and the metal heat transfer layer 112. If the IPM module includes at least 6 upper and lower bridge arm switch tubes such as IGBT104 and the corresponding freewheeling diode 103, then the thermal insulation layer 115 must have at least 6 through grooves, and the shape and size of each through groove are adapted to the shape of the insulating layer 109 and the metal heat transfer layer 112. During assembly, the thermal insulation layer 115 is first installed on the heat dissipation substrate 110, and then multiple insulating layers 109 and metal heat transfer layers 112 are respectively installed in corresponding through grooves. The total thickness of the insulating layer 109 and the metal heat transfer layer 112 is equivalent to the thickness of the thermal insulation layer 115, so that the surface of the metal heat transfer layer 112 is flush with the surface of the thermal insulation layer 115, thereby facilitating the laying of the circuit wiring layer 108, and making the surface of the circuit wiring layer 108 smooth, thereby facilitating the installation of electronic components.

[0038] In some embodiments of the present invention, Figure 2 , Figure 3 and Figure 5 As shown, it also includes a plurality of bonding wires 107, and the bonding wires 107 are connected between a plurality of electronic components, a circuit wiring layer 108, and a plurality of pins 116. The electronic components are the IGBT 104304, the driver chip 106, the freewheeling diode 103, and others such as resistors and capacitors mentioned in the above embodiments. The bonding wires 107 are usually gold wires, copper wires, gold-copper mixed wires, or thin aluminum wires of 38um or less. Specifically, the bonding wires 107 can connect between electronic components, between electronic components and circuit layers, between electronic components and pins 116, etc., so as to form a circuit connection of the entire IPM module.

[0039] In some embodiments of the present invention, Figures 4 to 6 As shown, the circuit composed of the circuit wiring layer 108 and the electronic components arranged on the circuit wiring layer 108 includes a driving circuit and an inverter circuit, wherein the inverter circuit includes 6 switch tubes of the upper and lower bridge arms, and the driving circuit includes a driving chip 106, and the driving chip 106 is provided with at least one of an over-temperature protection switch circuit, an under-voltage protection circuit, an over-current protection circuit, and an over-voltage protection circuit. The driving circuit is mainly composed of the driving chip 106, and the inverter circuit is mainly composed of 3 groups of inverter units of the upper and lower bridge arms, each inverter unit includes two three-stage transistors in Figure 7In the figure, there is an IGBT104, which can also be a MOS tube, wherein the triode transistor 202 and the triode transistor 205 are a group, the triode transistor 203 and the triode transistor 206 are a group, and the triode transistor 204 and the triode transistor 207 are a group, and each group of two triode transistors is divided into an upper bridge arm and a lower bridge arm, wherein the triode transistor 202 is the upper bridge arm, the triode transistor 205 is the lower bridge arm, the triode transistor 203 is the upper bridge arm, the triode transistor 206 is the lower bridge arm, the triode transistor 204 is the upper bridge arm, and the triode transistor 207 is the lower bridge arm. The drain of the triode transistor 202 of the upper bridge arm is connected to the high voltage input terminal P of the module, and the source of the triode transistor 202 of the upper bridge arm is connected to the triode transistor 207 of the lower bridge arm. 05, the source of the triode transistor 205 of the lower bridge arm is connected to the module external pin 116303UN, the gates of the two triode transistors are connected to the driving chip 106, the source of the triode transistor 203 of the upper bridge arm is connected to the drain of the triode transistor 205 of the lower bridge arm, the source of the triode transistor 206 of the lower bridge arm is connected to the module external pin 116303VN, the gates of the two triode transistors are connected to the driving chip 106, the source of the triode transistor 204 of the upper bridge arm is connected to the drain of the triode transistor 207 of the lower bridge arm, the source of the triode transistor 207 of the lower bridge arm is connected to the module external pin 116303WN, and the gates of the two triode transistors are connected to the control chip. Figure 6 This is a circuit block diagram of the driver chip 106. In addition to the driving circuits that drive the upper and lower bridge arm switch tubes respectively, that is, the high-voltage side driving circuit that drives the upper bridge arm switch tube and the low-voltage side driving circuit that drives the lower bridge arm switch tube, it also includes an over-temperature protection switch, an under-voltage protection circuit, an over-current protection circuit, and an over-voltage protection circuit. These circuits have high control accuracy to improve the control accuracy of the driver chip 106 and avoid the influence of excessive temperature on the parameters of the driver chip 106.

[0040] In some embodiments of the present invention, Figure 5 As shown, the six switch tubes of the inverter circuit, namely IGBT104, are divided into two groups, the upper and lower bridge arms, wherein the three switch tubes of the upper bridge arm are arranged in parallel above the circuit wiring layer 108, and the three switch tubes of the lower bridge arm are arranged in parallel below the circuit wiring layer 108. These switch tubes are arranged close to each other, and the driver chip 106 as the driver circuit is arranged on the other side of the circuit wiring layer 108. Figure 5The right side of the circuit is far away from the six switch tubes. The driver chip 106 and the six switch tubes are connected by wiring. Because the inverter circuit works in the strong power area (about 300V DC power supply), and part of the driver chip 106 works in the weak power area, its input control signal is a weak power signal. Therefore, by setting the driver chip 106 and the switch tube away from each other, it can better avoid the interference caused by the high voltage in the strong power area and the high-speed switching of the switch tube to the weak power circuit inside the driver chip 106, causing its operation to be unstable, which helps to improve the stability and reliability of the entire IPM module.

[0041] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0042] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0043] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0044] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0046] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. An intelligent power module, comprising: Heat dissipation substrate made of metal material; An insulating layer and a heat-insulating layer are respectively arranged on the surface of the heat dissipation substrate; A metal heat transfer layer is arranged on the surface of the insulating layer; A circuit wiring layer, arranged on the heat insulation layer and the metal heat transfer layer, wherein the circuit wiring layer is provided with a plurality of pads; An electronic component is arranged on the pad of the circuit wiring layer, the electronic component includes a power device and a driver chip, wherein the power device generates more heat than the driver chip, the power device is arranged on the circuit wiring layer corresponding to the metal heat transfer layer, and the driver chip is arranged on the circuit wiring layer corresponding to the heat insulation layer; A plurality of pins, wherein the plurality of pins are arranged on at least one side of the heat dissipation substrate; A sealing layer, the sealing layer at least wraps one side of the heat dissipation substrate on which the circuit element is disposed, and one end of the pin is exposed from the sealing layer; The thermal conductivity of the heat-insulating layer is lower than the thermal conductivity of the insulating layer; The heat insulation layer includes a middle heat insulation body and upper and lower metal layers, the heat insulation body is a FR-4 board, and the metal layers are copper foil; The superimposed thickness of the insulating layer and the metal heat transfer layer is equal to the thickness of the heat insulation layer; The area of ​​the insulating layer is not less than the area of ​​the metal heat transfer layer; The heat-insulating layer is provided with a through groove penetrating through the thickness thereof, and the insulating layer and the metal heat-conducting layer are installed in the through groove.

2. The intelligent power module according to claim 1, characterized in that: It also includes a plurality of bonding wires, wherein the bonding wires are connected between the plurality of electronic components, the circuit wiring layer, and the plurality of pins.

3. The intelligent power module according to claim 1, characterized in that: The insulating layer is made of a resin material, and the resin material is filled with fillers of aluminum oxide and aluminum carbide.

4. The intelligent power module according to claim 3, characterized in that: The filler is angular, spherical or a mixture of angular and spherical shapes.

5. The intelligent power module according to claim 1, characterized in that: The power devices are arranged close to each other, and the driving chip is arranged far away from the power devices.

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