Corrosion resistant grounded shield for process chambers

Abstract

The substrate support assembly includes a ground shield and a heater surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes a conductive layer, a first protective layer on an upper surface of the plate. In another embodiment, the ground shield is composed of a conductive body and a first protective layer on an upper surface of the plate.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a ground shield for a heater that can allow for uniformity in the formation of a biased plasma, and particularly to a ground shield that is resistant to corrosion and / or erosion, such as caused by a plasma environment. Background Art

[0002] In the semiconductor industry, heaters are used to support substrates and heat those substrates during processing, such as during deposition and / or etching processes using plasma. Radio frequency (RF) fields can be introduced into substrate processing equipment to promote oscillations between the heater and other components of the processing unit, which facilitates the use of plasma. Ground shields can be used to help ground the heater to allow for greater uniformity of the plasma during this process. Current ground shields are made of aluminum or stainless steel materials and coated with a protective coating that has a coefficient of thermal expansion (CTE) that is very different from the CTE of the aluminum or stainless steel. Because the CTE values ​​between the aluminum or stainless steel material and the traditional protective coating on the ground shield are significantly different, the protective coating often cracks, exposing the aluminum or stainless steel material to the corrosive environment and / or plasma. This prevents existing ground shields from being used in biased high temperature applications. Summary of the invention

[0003] In one embodiment, a ground shield for a processing chamber includes: a ceramic body including a plate and a raised edge extending from an upper surface of the plate. A heater fits within the raised edge on the upper surface of the plate. The ground shield further includes: a conductive layer on at least the upper surface of the plate; and a first protective layer on at least the conductive layer.

[0004] In one embodiment, a substrate support assembly for a processing chamber includes: a heater; and a ground shield including a disk-shaped ceramic body and a shaft extending from a lower surface of the disk-shaped ceramic body. The upper surface of the disk-shaped ceramic body includes a raised edge extending from the upper surface of the disk-shaped ceramic body. The heater is disposed on the upper surface of the disk-shaped ceramic body within the raised edge. The ground shield further includes: a conductive layer on at least the upper surface of the disk-shaped ceramic body; and a first protective layer on at least the conductive layer.

[0005] In one embodiment, a ground shield for a processing chamber includes: a conductive body including a plate and a raised edge extending from an upper surface of the plate. A heater fits within the raised edge on the upper surface of the plate. The raised edge includes an edge inner wall; an edge upper surface and an edge outer wall; a first protective layer on at least the upper surface of the plate; and a second protective layer on at least the first protective layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure is described by way of example (and not by way of limitation) in the figures of the accompanying drawings in which like reference numerals indicate like elements. It should be noted that different references to "one" or "an" embodiment in the present disclosure are not necessarily to the same embodiment, and such references mean at least one.

[0007] Figure 1 A cross-sectional view of one embodiment of a processing chamber is depicted.

[0008] Figure 2 An exploded view of one embodiment of a ground shield assembly is depicted.

[0009] Figure 3A A cross-sectional view of one embodiment of a ceramic ground shield assembly including a conductive layer and a first protective layer is depicted.

[0010] Figure 3B Another cross-sectional view of one embodiment of a ceramic ground shield assembly including a conductive layer and a first protective layer is depicted.

[0011] Figure 3C Another cross-sectional view of one embodiment of a ceramic ground shield assembly including a conductive layer and a first protective layer is depicted.

[0012] Figure 3D Another cross-sectional view of one embodiment of a ceramic ground shield assembly including a conductive layer and a first protective layer is depicted.

[0013] Figure 4A Depicted is a cross-sectional view of one embodiment of a ceramic ground shield assembly including a conductive layer, a first protective layer, and a second protective layer.

[0014] Figure 4B Another cross-sectional view of one embodiment of a ceramic ground shield assembly comprising a conductive layer, a first protective layer, and a second protective layer is depicted.

[0015] Figure 4C Another cross-sectional view of one embodiment of a ceramic ground shield assembly comprising a conductive layer, a first protective layer, and a second protective layer is depicted.

[0016] Figure 4D Another cross-sectional view of one embodiment of a ceramic ground shield assembly comprising a conductive layer, a first protective layer, and a second protective layer is depicted.

[0017] Figure 5A A cross-sectional view of one embodiment of a conductive ground shield assembly including a first protective layer and a second protective layer is depicted.

[0018] Figure 5B Another cross-sectional view of one embodiment of a conductive ground shield assembly including a first protective layer and a second protective layer is depicted.

[0019] Figure 5C Another cross-sectional view of one embodiment of a conductive ground shield assembly including a first protective layer and a second protective layer is depicted.

[0020] Figure 5D Another cross-sectional view of one embodiment of a conductive ground shield assembly including a first protective layer and a second protective layer is depicted.

[0021] Figure 5E Depicted is another cross-sectional side view of one embodiment of a conductive ground shield assembly including a first protective layer and a second protective layer.

[0022] Figure 6 Depicted is a cross-sectional view of one embodiment of a ground shield assembly including a plurality of holes drilled through a plate of a ground shield, wherein the plurality of holes are filled with conductive plugs.

[0023] Figure 7 A first method for forming a ground shield assembly as described herein is shown.

[0024] Figure 8 A second method of forming a ground shield assembly as described herein is shown. DETAILED DESCRIPTION

[0025] Embodiments of the present disclosure provide a ground shield and a substrate support assembly having the ground shield and a heater surrounded by the ground shield. The ground shield includes a plate and a raised edge extending from an upper surface of the plate, wherein the raised edge includes an edge inner wall, an upper edge surface, and an edge outer wall. The ground shield also includes a hollow shaft extending from a lower surface of the plate. The hollow surface includes an inner wall and an outer wall.

[0026] In one embodiment, the ground shield may be formed of a ceramic material and a conductive layer may be deposited on at least the upper surface of the plate. A first protective layer may be deposited on the conductive layer. A second layer may be deposited on the first protective layer. By depositing the conductive layer on the main body of the ceramic ground shield, the ground shield can provide a grounding function for the heater. The first protective layer and / or the second protective layer can protect the ground shield from highly oxidizing and / or corrosive environments. For example, the first protective layer and / or the second protective layer can resist oxidation and erosion and / or corrosion from plasma and / or corrosive chemicals (e.g., fluorine-rich environments and / or chlorine-rich environments). The first protective layer can be strategically selected so that the CTE value used for the first protective layer is substantially similar to the CTE value used for the ceramic material, or is within a suitable difference (e.g., within 2.5 to 10 -6 / °C) to prevent cracking of the first protective layer during substrate processing. By strategically selecting the ceramic material and the first protective layer to avoid CTE mismatch, the ground shield of the present disclosure can be used in biased high temperature applications.

[0027] In another embodiment, the ground shield may be formed of a conductive material. A first protective layer may be deposited on at least the upper surface of the plate of the ground shield. A second protective layer may be deposited on the first protective layer. The ground shield may be able to provide a grounding function for the heater without being damaged by a highly oxidizing or corrosive processing environment. The first protective layer and the second protective layer may protect the ground shield from the highly oxidizing or corrosive environment. The conductive material and the first protective layer may be strategically selected so that the CTE value for the conductive material and the CTE value for the first protective layer are substantially similar, or within a suitable difference (2.5 10 -6 / °C) to avoid cracking of the first protective layer during substrate processing. By strategically selecting the conductive material and the first protective layer to avoid CTE mismatch, the ground shield of the present disclosure can be used in biased high temperature applications.

[0028] Figure 1 A cross-sectional view of a processing chamber 100 (e.g., a semiconductor processing chamber) having one or more chamber components is shown. For example, the processing chamber 100 can be used for a semiconductor manufacturing process, a display manufacturing process, a micro-electromechanical system (MEMS) manufacturing process, a photovoltaic manufacturing process, etc. For example, the processing chamber 100 can be a chamber for a plasma etcher or plasma etching reactor, a plasma cleaner, a chemical vapor deposition (CVD) reactor, a physical vapor deposition (PVD) reactor, an atomic layer deposition (ALD) reactor, etc.

[0029] In one embodiment, the processing chamber 100 may include a chamber body 102 that encloses an interior volume 106. The chamber body 102 may be made of aluminum, stainless steel, or other suitable materials. The chamber body 102 generally includes a lid 104, sidewalls 108, and a bottom 110. An outer liner 116 may be disposed adjacent the sidewalls 108 to protect the chamber body 102. In one embodiment, the outer liner 116 may be made of aluminum oxide.

[0030] An exhaust port 126 may be defined in the chamber body 102 and may couple the interior volume 106 to a pumping system 128. The pumping system 128 may include one or more pumps and throttle valves to evacuate and regulate the pressure of the interior volume 106 of the processing chamber 100.

[0031] The gas plate 158 may be coupled to the processing chamber 100 to provide process and / or cleaning gases to the interior volume 106 through one or more intermediate components.

[0032] Examples of process gases that may be used to process the substrate in the process chamber 100 include halogen-containing gases such as C2F6, SF6, SiCl4, HBr, NF3, CF4, CHF3, CH2F3, F, NF, Cl2, CCl4, BCl4, and SiF4, and other gases such as O2, NH3, H2, or N2O. Examples of carrier gases include N2, He, Ar, and other gases that are inert to the process gas (e.g., non-reactive gases).

[0033] The processing chamber 100 may include a plurality of showerheads, panels, and / or gas distribution plates, which may be arranged in series. The showerhead 160 may be defined in the chamber body 102 and may be coupled to and / or proximate to the lid 104. Alternatively, the lid 104 may be replaced by the showerhead 160. The showerhead 160 may be positioned within the processing chamber 100 as shown and may include or be positioned between the lid 104 and the substrate support assembly 148. In an embodiment, the showerhead 160 may be or include a metallic or conductive component, which is a material that is coated, conditioned, or otherwise treated. Exemplary materials may include metals (including aluminum) and metal oxides (including aluminum oxide). Depending on the precursors used, or the processes performed within the processing chamber 100, the showerhead 160 may be any other metal that can provide structural stability and conductivity.

[0034] The showerhead 160 may define one or more holes to facilitate uniform distribution of precursors and / or plasma through the showerhead 160. These holes may be included in a variety of configurations and patterns, and may be characterized by a variety of geometries that may provide a distribution of precursors and / or plasma as may be desired. In an embodiment, the showerhead 160 may be electrically coupled to a power source. For example, the showerhead 160 may be coupled to an RF source 170. When operating, the RF source 170 may provide current to the showerhead 160, thereby allowing an inductively coupled plasma (ICP) or a conductively coupled plasma (CCP) to be formed between the showerhead 160 and another component.

[0035] The chamber body 102 may also include a faceplate 162. The faceplate 162 may be similar to the showerhead 160. The faceplate 162 may be located within the processing chamber 100 between the showerhead 160 and the substrate support assembly 148. The faceplate 162 may include a plurality of channels or holes defined through the faceplate 162. The faceplate 162 may be or include an insulating material. In one embodiment, the faceplate 162 may be quartz or any material that may have reduced interaction with oxygen-containing plasma effluents, such as reduced impact on oxygen or oxygen radical recombination compared to metal oxide components.

[0036] A second showerhead 164 can be defined in the chamber body 102 and can serve as an additional electrode with the showerhead 160. The showerhead 164 can include any of the features or characteristics of the showerhead 160 discussed previously. In other embodiments, certain features of the showerhead 164 can differ from the showerhead 160. For example, the showerhead 164 can be coupled to an electrical ground 172, which can allow an ICP or CCP to be generated between the showerhead 160 and the showerhead 164. In one embodiment, an ICP or CCP can be generated between the showerhead 160 and the faceplate 162. The showerhead 164 can define holes within the structure to allow for the delivery of precursors or plasma effluents to the substrate 144 during processing.

[0037] The gas distribution assembly 166 may optionally be defined in the chamber body 102. In some embodiments, there may be no components between the showerhead 164 and the substrate support assembly 148, and the showerhead 164 may allow for the distribution of precursors and / or plasma effluents into the substrate 144 during processing. The gas distribution assembly 166 may be located within the chamber body 102, above the substrate support assembly 148 and the lid 104, and between the substrate support assembly 148 and the showerhead 164. The gas distribution assembly 166 may be configured to deliver both the first and second precursors to the substrate support assembly 148.

[0038] In one embodiment, the gas distribution assembly 166 may be configured with two or more gas feed channels to allow precursors and / or plasma delivered by the showerhead 164 to pass through the gas distribution assembly 166 and enter the substrate support assembly 148. In another embodiment, the gas distribution assembly 166 may allow precursors and / or plasma from another source, such as a remote plasma source (not shown), to pass through the gas distribution assembly 166 and enter the substrate support assembly 148.

[0039] A second panel 168 can be defined in the chamber body 102. In some embodiments, the panel 168 can provide similar functionality as the panel 162 or the showerheads 160, 164 and include similar features. The substrate support assembly 148 can be coupled to an RF source 176. In particular, a grounded shield of the substrate support assembly 148 can be coupled to the RF source 176. The panel 168 can be coupled to an electrical ground 174. When operating, the RF source 176 can provide current to the substrate support assembly 148, thereby allowing a biased plasma to be formed between the panel 168 and the substrate 144. In an embodiment, the panel 168 can be coupled to an electrical ground 174.

[0040] The substrate support assembly 148 may be disposed in the interior volume 106 of the processing chamber 100 below the showerhead and / or the gas diffuser 160. The substrate support assembly 148 may hold the substrate 144 during processing. In one embodiment, the substrate support assembly 148 may include a ground shield 149 and a heater 150. The heater 150 may include a heater body including a plate or disk and a shaft (e.g., a cylindrical shaft) extending from a lower surface of the disk or plate. The ground shield 149 may include a ground shield body including a plate or disk and a shaft extending from a lower surface of the plate or disk. The shaft of the ground shield 149 may be a hollow shaft, and the shaft of the heater 150 may be disposed inside the hollow shaft of the ground shield 149. The ground shield body may additionally include a raised edge extending from an upper surface of the plate or disk (e.g., a ring at the periphery of the plate). The plate of the heater 150 may be placed inside the raised edge of the ground shield 149 , and the raised edge of the ground shield 149 may protect the side walls of the heater 150 .

[0041] In one embodiment, the heater 150 is made of AlN (aluminum nitride). Alternatively, the heater 150 may be made of SiC (silicon carbide) or other materials. In one embodiment, the heater 150 may include one or more resistive heating components disposed in the heater body. In one embodiment, the one or more resistive heating components may be disposed on a plate.

[0042] During processing, the heater 150 may heat the substrate 144 to an operating temperature of 450° C., 500° C., or higher. Conventional ground shields are made of aluminum or stainless steel and include a plasma-sprayed Y2O3 (yttria or yttrium oxide) coating. However, the CTE values ​​of the aluminum or stainless steel of conventional ground shields are much higher than the CTE of Y2O3. For example, aluminum has a CTE of about 21-2410°C. -6 / ℃, stainless steel has a CTE of about 7.6 and 17.3 10 -6 / ℃, and Y2O3 has a CTE of 7.210 -6 This mismatch in CTE values ​​can cause the Y2O3 coating to crack and delaminate from the body of a conventional ground shield at operating temperatures of 450°C or higher.

[0043] Thus, in some embodiments, at least the plate of the ground shield 149 is constructed of a bulk ceramic material. The shaft of the ground shield 149 may be the same ceramic material, or may be a different material than that used for the plate. Example ceramic materials that may be used for the plate of the ground shield (and optionally the shaft of the ground shield) may include Al2O3 (aluminum oxide), AlN, Si (silicon), SiC, SiN (silicon nitride), Y3Al5O3, and Y3Al5O3. 12(YAG), Y4Al2O9 (YAM), Y5O4F7, Y2O3, Er2O3, Gd2O3, Gd3Al5O 12 (GAG), YF3, YAlO3(YAP), Nd2O3, Er4Al2O9(EAM), Er3Al5O 12 (EAG), ErAlO3(EAP), Gd4Al2O9(GAM), GdAlO3(GAP), Nd3Al5O 12 , Nd4Al2O9, NdAlO3 or a ceramic compound composed of a solid solution of Y4Al2O9 and Y2O3-ZrO2.

[0044] In order to provide RF grounding (and thus function as a ground shield), the ground shield 149 should include a conductive component. Therefore, the ground shield 149 may include a conductive layer 151 on at least the upper surface of the plate of the ground shield 150. The conductive layer 151 may be made of Mo (molybdenum), W (tungsten), Ta (tantalum), Ni (nickel), (an alloy of nickel, molybdenum and chromium), (an alloy of nickel, chromium and iron), Ti (titanium), Ti alloy (such as TC4), ITO (indium tin oxide), etc. As used herein, the term "conductive layer" refers to a layer having a resistivity of 5Ω·cm or less at a temperature between about 20°C and about 800°C. The conductive layer 151 can be a solid layer or can be a patterned or printed layer (e.g., having one or more patterns, such as a mesh pattern, a grid pattern, a bullseye pattern, a spiral pattern, etc.). The conductive layer 151 can be grounded at one or more points, as further described below. Since the ground shield 149 provides RF grounding, the ground shield 149 can have multiple paths for grounding to minimize parasitic capacitance and / or inductance and provide equivalent low impedance at the frequencies of interest at various points of the ground shield 149.

[0045] The conductive layer 151 is coated with a first protective layer 152. The first protective layer 152 may be thicker than the conductive layer 151 and may be made of a material having a CTE close to the CTE of the body of the ground shield 149. The first protective layer 152 may be made of conductive or non-conductive metals, alloys, ceramics, and other composite materials. The first protective layer 152 may have good oxidation resistance and may be plasma resistant at a temperature of 450° C. or higher. In an embodiment, the first protective layer 152 may be made of Al2O3, Y2SiO5, Y2Si2O7, Ta, titanium alloys (e.g., TC4), SiC, Y2O3, Y4Al2O9, Y3Al5O 12, YAlO3, Y5O4F7, quartz, Si3N4, AlN, AlON (aluminum oxynitride), TiO2 (titanium dioxide), ZrO2 (zirconium oxide), TiC (titanium carbide), ZrC (zirconium carbide), TiN (titanium nitride), TiCN (titanium carbon nitride), and Y2O3 stabilized ZrO2 (YSZ).

[0046] The first protective layer 152 may be coated with a second protective layer 153. The second protective layer 153 may be a thin layer that seals any cracks and / or holes in the first protective layer 152. The second protective layer 153 may be made of Y2SiO5, Y2Si2O7, Ta, titanium alloys (e.g., TC, TC4), SiC, Y4Al2O9, Y3Al5O 12 , YAlO3, Y5O4F7, quartz, Si3N4, AlN, AlON, TiO2, ZrO2, TiC, ZrC, TiN, TiCN, Y2O3 stabilized ZrO2 (YSZ), etc. The second protective layer 153 can also be made of a ceramic composite (such as Y3Al5O distributed in an Al2O3 matrix). 12 , Y2O3-ZrO2 solid solution or SiC-Si3N4 solid solution).

[0047] Other example compositions for the first protective layer 152 and / or the second protective layer 153 include Y2O3, Al2O3, Er2O3, YF3, Er3Al5O 12 , YOF (e.g., Y5O4F7), Er3Al5O 12 , Er4Al2O9, ErAlO3, Y2O3-ZrO2 solid solutions and ceramic compounds containing Y4Al2O9 and Y2O3-ZrO2 solid solutions.

[0048] With reference to the solid solution of Y2O3-ZrO2, the first protective layer 152 and / or the second protective layer 153 may include Y2O3 at a concentration of 10-90 mol% and ZrO2 at a concentration of 10-90 mol%. In some examples, the solid solution of Y2O3-ZrO2 may include 10-20 mol% Y2O3 and 80-90 mol% ZrO2, may include 20-30 mol% Y2O3 and 70-80 mol% ZrO2, may include 30-40 mol% Y2O3 and 60-70 mol% ZrO2, may include 40-50 mol% Y2O3 and 50-60 mol% ZrO2, may include 60-70 mol% Y2O3 and 30-40% ZrO2. It may include 70-80 mol% Y2O3 and 20-30 mol% ZrO2, it may include 80-90 mol% Y2O3 and 10-20 mol% ZrO2, and so on.

[0049] Referring to the ceramic compound containing a solid solution of Y4Al2O9 and Y2O3-ZrO2, in one embodiment, the ceramic compound includes 62.93 mol% of Y2O3, 23.23 mol% of ZrO2, and 13.94 mol% of Al2O3. In another embodiment, the ceramic compound may include Y2O3 in the range of 50-75 mol%, ZrO2 in the range of 10-30 mol%, and Al2O3 in the range of 10-30 mol%. In another embodiment, the ceramic compound may include Y2O3 in the range of 40-100 mol%, ZrO2 in the range of 0.1-60 mol%, and Al2O3 in the range of 0.1-10 mol%. In another embodiment, the ceramic compound may include Y2O3 in the range of 40-60 mol%, ZrO2 in the range of 30-50 mol%, and Al2O3 in the range of 10-20 mol%. In another embodiment, the ceramic compound may include Y2O3 in the range of 40-50 mol%, ZrO2 in the range of 20-40 mol%, and Al2O3 in the range of 20-40 mol%. In another embodiment, the ceramic compound may include Y2O3 in the range of 60-80 mol%, ZrO2 in the range of 0.1-10 mol%, and Al2O3 in the range of 20-40 mol%. In another embodiment, the ceramic compound may include Y2O3 in the range of 40-60 mol%, ZrO2 in the range of 0.1-20 mol%, and Al2O3 in the range of 30-40 mol%. In other embodiments, other distributions may also be used for the ceramic compound.

[0050] In one embodiment, an alternative ceramic compound including a combination of Y2O3, ZrO2, Er2O3, Gd2O3, and SiO2 is used as the ground shield body of the ground shield 149. In one embodiment, the alternative ceramic compound may include Y2O3 in the range of 40-45 mol%, ZrO2 in the range of 0-10 mol%, Er2O3 in the range of 35-40 mol%, Gd2O3 in the range of 5-10 mol%, and SiO2 in the range of 5-15 mol%. In another embodiment, the alternative ceramic compound may include Y2O3 in the range of 30-60 mol%, ZrO2 in the range of 0-20 mol%, Er2O3 in the range of 20-50 mol%, Gd2O3 in the range of 0-10 mol%, and SiO2 in the range of 0-30 mol%. In a first example, the alternative ceramic compound includes 40 mol% Y2O3, 5 mol% ZrO2, 35 mol% Er2O3, 5 mol% Gd2O3, and 15 mol% SiO2. In a second example, the alternative ceramic compound includes 45 mol% Y2O3, 5 mol% ZrO2, 35 mol% Er2O3, 10 mol% Gd2O3, and 5 mol% SiO2. In a third example, the alternative ceramic compound includes 40 mol% Y2O3, 5 mol% ZrO2, 40 mol% Er2O3, 7 mol% Gd2O3, and 8 mol% SiO2. In one embodiment, the ground shield body may be composed of a material including 70-75 mol% Y2O3 and 25-30 mol% ZrO2. In a further embodiment, the ground shield 200 body is formed of a material named YZ-20 including 73.13 mol % of Y2O3 and 26.87 mol % of ZrO2.

[0051] Any of the foregoing porous coatings may include trace amounts of other materials, such as ZrO2, Al2O3, SiO2, B2O3, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3, or other oxides.

[0052] Figure 2 An exploded view of one embodiment of a ground shield 200 is depicted. The ground shield 200 may be used with Figure 1 The ground shield 200 may include a plate 204 and a raised edge 206 extending from an upper surface of the plate 204. In one embodiment, the ground shield 200 further includes a hollow shaft 214 extending from a lower surface of the plate 204. The hollow shaft 214 includes an inner wall 216 and an outer wall 218.

[0053] In one embodiment, the plate 204 may have a shape that generally corresponds to the shape of the heater to be protected. For example, the top of the heater may be rounded, and the plate 204 may have a disc shape, as shown. The plate 204 may have a thickness between about 0.20 inches and about 2.00 inches.

[0054] In one embodiment, the board 204 may have a plurality of holes drilled through the board 204. The plurality of holes may be filled with conductive plugs. The conductive plugs may be a conductive layer on the upper surface of the board 204 that provides a path for grounding. Figure 6 Conductive plugs (eg, vias) are discussed in more detail.

[0055] The raised edge 206 may extend from the upper surface of the plate 204 and may include an edge inner wall 208, an edge upper surface 210, and an edge outer wall 212. The edge inner wall 208 may have a height between about 0.20 inches and about 2.00 inches. The edge upper surface 210 may have a width between about 0.05 inches and about 0.50 inches. The edge outer wall 212 may have a height between about 0.20 inches and about 4.00 inches. In one embodiment, the raised edge 206 may have a shape that generally corresponds to the shape of the heater to be grounded. For example, the edge inner wall 208 may have a height corresponding to the height of a disk of the heater that will be surrounded by the raised edge 206.

[0056] In another embodiment, the ground shield 200 may further include a hollow shaft 214 extending from the lower surface of the plate 204. The hollow shaft 214 may include an inner wall 216 and an outer wall 218. In one embodiment, the hollow shaft 214 may have a shape corresponding to the shape of the heater to be grounded. For example, the inner wall 216 may have a diameter corresponding to or slightly larger than the diameter of a cylindrical shaft of the heater.

[0057] In one embodiment, the plate 204 and the hollow shaft 214 of the ground shield 200 can be a single component (e.g., a single sintered ceramic body). Alternatively, the plate 204 can be a different component from the hollow shaft 214. In such an embodiment, the plate 204 can be coupled to the hollow shaft 214 (such as by bolts or other fasteners). In one embodiment, the hollow shaft 214 can be composed of two parts, which can be identical or nearly identical parts. These parts can be gathered together (e.g., bolted together) around the axis of the heater. The combined parts of the hollow shaft 214 can then be fixed to the plate 204.

[0058] In one embodiment, the ground shield 200 may include a bulk sintered ceramic material. The ground shield 200 may have one or more of the following compositions: Al2O3, AlN, Si, SiC, SiN, ZrO2, Y3Al5O 12, Y4Al2O9, Y5O4F7, Y2O3, Er2O3, Gd2O3, Gd3Al5O 12 , YF3, Nd2O3, Er4Al2O9, Er3Al5O 12 (EAG), ErAlO3, Gd4Al2O9, GdAlO3, Nd3Al5O 12 , Nd4Al2O9 or NdAlO3.

[0059] In one embodiment, the plate 204 and raised rim 206 may not have the same composition as the hollow shaft 214. For example, the plate 204 and raised rim 206 may be constructed of any of the bulk sintered ceramic materials described above, while the hollow shaft 214 may be constructed of a stronger metallic material such as stainless steel or aluminum.

[0060] In one embodiment, the ground shield 200 is constructed of a bulk sintered ceramic material and further includes a conductive layer 220 deposited on at least the upper surface of the plate 204 and a first protective layer 222 deposited on at least the conductive layer 220 .

[0061] The conductive layer 220 may include Mo, W, Ta, Ti, TC4, In one embodiment, the conductive layer 220 has a composition of a material that provides good oxidation resistance at processing temperatures (such as 450° C. or higher). ). The conductive layer 220 may be deposited by conventional atmospheric plasma spraying, low pressure plasma spraying (LPPS), vacuum plasma spraying (VPS), screen printing, wet chemical deposition (e.g., sol-gel), physical vapor deposition (PVD), chemical vapor deposition (CVD), aerosol deposition, evaporation, atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PEVCVD), ion assisted deposition (IAD), ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering, or co-sintering techniques. The conductive layer 220 may have a thickness between about 0.05 μm and 2.00 mm.

[0062] The first protective layer 222 may be made of a plasma-resistant ceramic material. The first protective layer may have the following composition: Al2O3, Y2SiO5, Y2Si2O7, Ta, Ta2O5, titanium alloy (e.g., TC4), SiC, Y2O3, Y4Al2O9, Y3Al5O 12, YAlO3, Y5O4F7, quartz, Si3N4, AlN, AlON, TiO2, ZrO2, TiC, ZrC, TiN, TiCN, Y2O3 stabilized ZrO2, etc. The first protective layer 222 can also be made of a ceramic composite (such as Y3Al5O distributed in an Al2O3 matrix). 12 , Y2O3-ZrO2 solid solution or SiC-Si3N4 solid solution). The first protective layer 222 may also be a ceramic composite including a solid solution containing yttria (also known as yttria and Y2O3). For example, the first protective layer 222 may be composed of (compound Y4Al2O9 and solid solution Y2-xZr x It should be noted that pure yttrium oxide and solid solutions containing yttrium oxide may be doped with one or more of ZrO2, Al2O3, SiO2, B2O3, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3 or other oxides.

[0063] In one embodiment, the first protective layer 222 may be made of a compound Y4Al2O9 and a solid solution Y2-xZr x In one embodiment, the composite ceramic coating is composed of a composite ceramic coating of Y2O3 (Y2O3-ZrO2 solid solution). In a further embodiment, the composition of the first protective layer 222 may include 62.93 mol% Y2O3, 23.23 mol% ZrO2 and 13.94 mol% Al2O3. In another embodiment, the composite ceramic coating may include Y2O3 in the range of 50-75 mol%, ZrO2 in the range of 10-30 mol% and Al2O3 in the range of 10-30 mol%. In other embodiments, other distributions may also be used for the composite ceramic coating. In one embodiment, the composite ceramic is a solid solution containing yttrium oxide that can be mixed with one or more of ZrO2, Al2O3 or a combination thereof.

[0064] In one embodiment, the first protective layer 222 may be composed of yttrium aluminum garnet (YAG) (composed of 35 mol % Y2O3 and 65 mol % Al2O3). In another embodiment, the first protective layer 222 may be composed of YAG (composed of 30-40 mol % Y2O3 and 60-70 mol % Al2O3).

[0065] The first protective layer 222 may also be composed of other materials discussed above.

[0066] The first protective layer 222 can be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, aerosol deposition, evaporation, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering or co-sintering technology. In one embodiment, the first protective layer 222 may have a thickness between about 50.00nm and about 2.00mm. In another embodiment, the first protective layer 222 may have a thickness between about 1.00μm and about 2.00mm. In one embodiment, the first protective layer 222 may have cracks and a porosity of about 0.10-10.0% (e.g., about 0.10-1%, 1-5%, 1-3%, 3-5%, 5-7%, etc.).

[0067] In one embodiment, the first protective layer 222 may be composed of Al2O3 and may be deposited by any of conventional atmospheric plasma spraying, LPPS or VPS. In another embodiment, the first protective layer 222 may have a porosity of approximately zero (eg, a porosity of less than 0.1%).

[0068] In one embodiment, the first protective layer 222 is ground to a certain smoothness. The first protective layer 222 can be ground by a grinder or a chemical mechanical planarization (CMP) machine. A grinder is a machine with a grinding disk that grinds and / or grinds the surface of the article. The grinder or CMP machine can grind the surface of the first protective layer 222 to reduce the roughness of the layer and / or reduce the thickness of the layer. In one embodiment, the first protective layer 222 can be ground to have an average roughness of less than 0.10 microns or less.

[0069] In one embodiment, the material for the first protective layer 222 may be appropriately selected so that the CTE for the first protective layer 222 matches the CTE of the ceramic ground shield 200 in order to minimize the CTE mismatch between the ceramic ground shield 200 and the first protective layer 222 and avoid thermomechanical stresses that may damage the first protective layer 222 during handling. In one embodiment, the CTE for the first protective layer 222 has a CTE of about 2.5 to 10 times the CTE for the ceramic ground shield 200 (e.g., for a plate of the ceramic ground shield 200). -6 In one embodiment, the ceramic ground shield 200 may be made of Al2O3, and the first protective layer 222 may be made of a material having a CTE difference within about 2.5 to 10 of the CTE for the ceramic ground shield 200. -6 / ℃ material composition.

[0070] In further embodiments, the ground shield 200 may be formed of a bulk sintered ceramic material, further including a conductive layer 220 deposited on at least the upper surface of the plate 204 , a first protective layer 222 deposited on at least the conductive layer 220 , and a second protective layer 224 deposited on at least the first protective layer 222 .

[0071] The conductive layer 220 may be made of any conductive material disclosed herein. The first protective layer 222 may be made of any ceramic material disclosed herein.

[0072] The second protective layer 224 may be made of Y2O3, Er2O3, Ta2O5, YF3, Al2O3, AlF3, ZrO2 and combinations thereof. The second protective layer 224 may also be made of Y2SiO5, Y2Si2O7, Ta, titanium alloy (e.g., TC 4), SiC, Y4Al2O9, Y3Al5O 12 , YAlO3, Y5O4F7, quartz, Si3N4, AlN, AlON, TiO2, ZrO2, TiC, ZrC, TiN, TiCN, Y2O3 stabilized ZrO2, etc. The second protective layer 224 can also be a ceramic composite, such as Y3Al5O distributed in an Al2O3 matrix. 12 , Y2O3-ZrO2 solid solution or SiC-Si3N4 solid solution. The second protective layer 224 may also be a ceramic composite including a solid solution containing yttria (also known as yttria and Y2O3). For example, the second protective layer 224 may be a ceramic composite composed of a compound Y4Al2O9 and a solid solution Y2-xZr x It should be noted that pure yttrium oxide and solid solutions containing yttrium oxide may be doped with one or more of ZrO2, Al2O3, SiO2, B2O3, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3 or other oxides.

[0073] In one embodiment, the second protective layer 224 is composed of a compound Y4Al2O9 and a solid solution Y2-xZr xThe second protective layer 224 may include a composite ceramic coating composed of Y2O3 (Y2O3-ZrO2 solid solution). In a further embodiment, the composition of the second protective layer 224 may include 62.93 mol% Y2O3, 23.23 mol% ZrO2 and 13.94 mol% Al2O3. In another embodiment, the second protective layer 224 may include Y2O3 in the range of 50-75 mol%, ZrO2 in the range of 10-30 mol% and Al2O3 in the range of 10-30 mol%. In other embodiments, other distributions may also be used for the composite ceramic coating. In one embodiment, the composite ceramic is a solid solution containing yttrium oxide that can be mixed with one or more of ZrO2, Al2O3 or a combination thereof.

[0074] In one embodiment, the second protective layer 224 may be composed of YAG (composed of 35 mol% Y2O3, 65 mol% Al2O3). In another embodiment, the second protective layer 224 may be composed of YAG (composed of 30-40 mol% Y2O3 and 60-70 mol% Al2O3). The second protective layer 224 may have a porosity between 0.1% and 10.0%.

[0075] The second protective layer 224 may also be composed of any other material disclosed herein above with reference to the first protective layer 224 .

[0076] The second protective layer 224 can be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, aerosol deposition, evaporation, PEVCVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering or co-sintering techniques. In one embodiment, the second protective layer 224 can be deposited by ALD.

[0077] In one embodiment, the second protective layer 224 may have a thickness between about 50.00 nm and about 2.00 mm or thicker. In another embodiment, the second protective layer 224 may have a thickness between about 1.00 μm and about 2.00 mm. The second protective layer 224 may be a conformal layer and may have a porosity of approximately zero (e.g., a porosity of less than 0.1%). In one embodiment, the first protective layer 222 may have cracks and a porosity of about 0.10-10.0% (e.g., about 0.10-1%, 1-5%, 1-3%, 3-5%, 5-7%, etc.). The second protective layer 224 may be a top coating that seals the pores and / or cracks in the first protective layer 222. Because the second protective layer 224 is very thin, the CTE of the second protective layer 224 may not match the CTE of the first protective layer 222 or the plate 204.

[0078] In some embodiments, second protective layer 224 is deposited before first protective layer 222. In such embodiments, second protective layer 224 may protect conductive layer 220 from gas and / or plasma that penetrates cracks and / or pores in first protective layer 222.

[0079] According to one embodiment, the conductive layer 220, the first protective layer 222, and the second protective layer 224 are shown covering the upper surface of the plate 204. In alternative embodiments, one or more of the conductive layer 220, the first protective layer 222, and / or the second protective layer 224 may additionally cover the edge inner wall 208, the edge upper surface 210, the edge outer wall 212, the shaft inner portion 216, the shaft outer portion 218, the lower surface of the plate 204, and / or other surfaces of the ground shield 200. In these embodiments, the conductive layer 220 may provide an alternative path for grounding to facilitate the function of the ground shield 200. For example, the conductive layer 220 may cover the shaft inner wall 216 or the shaft outer portion 218. Figures 3A-5E Some embodiments are shown.

[0080] In one embodiment, the material for the first protective layer 222 can be appropriately selected according to the resistance to the chlorine treatment environment. For example, the first protective layer 222 can be made of titanium alloy (eg, TC4), Or any other chlorine-resistant material having a target CTE value. In one embodiment, the material for the second protective layer 224 may also be appropriately selected based on resistance to a chlorine processing environment, and may be composed of any chlorine-resistant material having a target CTE value as described above.

[0081] In one embodiment, the material for the first protective layer 222 can be appropriately selected according to the resistance to the fluorine gas processing environment. For example, the first protective layer 222 can be composed of YF3, AlF3, Er2O3 or any other fluorine-resistant material. In one embodiment, the material for the second protective layer 224 can also be appropriately selected according to the resistance to the fluorine gas processing environment, and can be composed of any fluorine-resistant material having a target CTE value as described above.

[0082] In further embodiments, the ground shield 200 may further include a third protective layer (not shown) deposited on the second protective layer 224. The third protective layer may be composed of Y2O3, Er2O3, Ta2O5, YF3, Al2O3, AlF3, ZrO2, and combinations thereof. In one embodiment, the third protective layer may have cracks and a porosity of about 0.10-10.0% (e.g., about 0.10-1%, 1-5%, 1-3%, 3-5%, 5-7%, etc.). In another embodiment, the third protective layer may be a conformal layer and may have a porosity of about zero (e.g., a porosity of less than 0.1%).

[0083] The third protective layer may be deposited by conventional atmospheric plasma spray, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, ALD, aerosol deposition, evaporation, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering or co-sintering techniques. The third protective layer may have a thickness of about 50 nm to 5 μm or more. The third protective layer may be a conformal layer.

[0084] In one embodiment, the ground shield 200 may be constructed of a conductive material and may further include a first protective layer 222 deposited on at least the upper surface of the plate 204 and a second protective layer 224 deposited on the first protective layer 222. In such an embodiment, the conductive layer 220 may be omitted.

[0085] The conductive material may have one or more of the following compositions: Mo, W, Ta, ITO, Si or SiC, or any other material that is stable in a high temperature environment. In one embodiment, a conductive metal matrix composite (MMC) material is used for the ground shield 200. The MMC material includes a metal matrix and a reinforcing material embedded and dispersed throughout the matrix. The metal matrix may include a single metal or two or more metals or metal alloys. Available metals include, but are not limited to, aluminum (Al), magnesium (Mg), titanium (Ti), cobalt (Co), cobalt-nickel alloy (CoNi), nickel (Ni), chromium (Cr), gold (Au), silver (Ag) or various combinations thereof. Reinforcing materials may be selected to provide the desired structural strength for the MMC, and reinforcing materials may also be selected to provide the desired value for other properties of the MMC (e.g., such as thermal conductivity and CTE). Examples of usable reinforcing materials include Si, carbon (C) or SiC, but other materials may also be used.

[0086] The first protective layer 222 and the second protective layer 224 may be formed of any suitable material discussed herein above.

[0087] In one embodiment, the material for the first protective layer 222 may be appropriately selected so that the CTE of the first protective layer 222 matches the CTE of the conductive ground shield 200 to minimize the CTE mismatch between the conductive ground shield 200 and the first protective layer 222 and to avoid thermomechanical stresses that may damage the first protective layer 222 during handling. In another embodiment, the material for the first protective layer 222 may be appropriately selected so that the CTE of the first protective layer 222 substantially matches the CTE of the conductive ground shield 220 (e.g., within 2.5 to 10°). -6 / °C). In one embodiment, the body of the ground shield 200 may be formed of a suitably selected material such that the CTE for the body of the ground shield 200 substantially matches the CTE of Al2O3 (or one of the other ceramic materials listed above for the first protective layer 222), and the first protective layer 222 may be formed of Al2O3 (or one of the other materials listed above for the first protective layer). For example, the body of the ground shield 200 may be formed of a titanium alloy (e.g., TC4) having a CTE that matches the CTE of Al2O3, and the first protective layer 222 may be formed of Al2O3. In another embodiment, the body of the ground shield 200 may be formed of a suitably selected material such that the CTE for the body of the ground shield 200 may be within 2.5 to 10 times the CTE of Al2O3. -6 In another embodiment, the main body of the ground shield 200 may be made of SiC, and the first protection layer 222 may be made of Y2SiC or Y2Si2O7.

[0088] Figures 3A to 3D Shows the Figure 2 A cross-sectional side view of various embodiments of the ceramic ground shield 200 is shown having a structure of a conductive layer 220 and a first protective layer 222 . Figure 3A An embodiment is depicted where a conductive layer 302 may be deposited on an upper surface of the plate 204. A first protective layer 304 may be deposited on the conductive layer 302. Figure 3B An alternative embodiment is depicted in which a conductive layer 302 may be further deposited on edge inner wall 208 and edge upper surface 210. A first protective layer 304 may be deposited on conductive layer 302. Figure 3C Another alternative embodiment is depicted in which the conductive layer 302 may be deposited on the upper surface of the plate 204 and on the inner wall 216 of the hollow shaft 214. A first protective layer 304 may be deposited on the conductive layer 302. Figure 3D Another alternative embodiment is depicted where conductive layer 302 may be deposited on upper surface of plate 204 , rim inner wall 208 , rim upper surface 210 , rim outer wall 212 , lower surface of plate 204 , and outer wall 218 of hollow shaft 214 .

[0089] In further embodiments, the conductive layer 302 and the first protective layer 304 may completely cover each surface of the ground shield 200, or may cover the edge outer wall 212 and / or the lower surface of the plate 204 in addition to any surface of the ground shield 200 that these layers are shown to cover in the illustrated example. In further embodiments, the conductive layer 302 may cover any surface of the ground shield 200 shown, but the first protective layer 304 may completely cover each surface of the ground shield 200, or may cover the edge outer wall 212 and / or the lower surface of the plate 204 in addition to any surface of the ground shield 200 that the first protective layer 304 is shown to cover in the illustrated example.

[0090] exist Figures 3A to 3D In any of the depicted embodiments, the first protective layer 304 may completely cover the conductive layer 302 so that the conductive layer 302 is not exposed to the Figure 1 3A-3D, the first protective layer 304 may be deposited on any surface of the ground shield 200 that is not covered by the conductive layer 302. For example, the conductive layer 302 may be deposited on the upper surface of the plate 204, and the first protective layer 304 may be deposited on the conductive layer 302 and the edge inner wall 208.

[0091] In another embodiment not shown, the ground shield 200 may be formed of a ceramic material. The conductive layer 302 may be deposited on the upper surface of the plate 204, the edge inner wall 208, the edge upper surface 210, and the edge outer wall 212. The first protective layer 304 may be deposited on the conductive layer 302. In further embodiments, the conductive layer 302 may also be deposited on the lower surface of the plate 204. The first protective layer 304 may be deposited onto the conductive layer 302.

[0092] Figures 4A to 4D Shows the Figure 2 A cross-sectional side view of various embodiments of the ceramic ground shield 200 is shown having a structure of a conductive layer 220 , a first protective layer 222 , and a second protective layer 224 . Figure 4A An embodiment is depicted in which a conductive layer 402 may be deposited on an upper surface of the plate 204. A first protective layer 404 may be deposited on the conductive layer 402. A second protective layer 406 may be deposited on the first protective layer 404. Figure 4B An alternative embodiment is depicted in which a conductive layer 402 may be deposited on the upper surface of plate 204, edge inner wall 208, and edge upper surface 210. A first protective layer 404 may be deposited on conductive layer 402. A second protective layer 406 may be deposited on first protective layer 404. Figure 4CAnother alternative embodiment is depicted in which a conductive layer 402 may be deposited on the upper surface of the plate 204 and the inner wall 216 of the hollow shaft 214. A first protective layer 404 may be deposited on the conductive layer 402. A second protective layer 406 may be deposited on the first protective layer 404. Figure 4D Another alternative embodiment is depicted in which a conductive layer 402 may be deposited on the upper surface of the plate 204, the edge inner wall 208, the edge upper surface 210, the edge outer wall 212, the lower surface of the plate 204, and the outer wall 218 of the hollow shaft 214. A first protective layer 404 may be deposited on the conductive layer 402. A second protective layer 406 may be deposited on the first protective layer 404. In all of the above embodiments, a third protective layer (not shown) may be deposited on the second protective layer 406.

[0093] In further embodiments, the conductive layer 402, the first protective layer 404, and the second protective layer 406 may completely cover each surface of the ground shield, or may cover the edge outer wall 212 and / or the lower surface of the plate 204 in addition to any surface of the ground shield 200 that these layers are shown as covering in the illustrated example. In further embodiments, the conductive layer 402 may cover any surface of the ground shield 200 as shown, but the first protective layer 404 and the second protective layer 406 may completely cover each surface of the ground shield 200, or may cover the edge outer wall 212 and the lower surface of the plate 204 in addition to any surface of the ground shield 200 that the first protective layer 404 and the second protective layer 406 are shown as covering in the illustrated example. In further embodiments, the conductive layer 402 and the first protective layer 404 may cover any surface of the ground shield 200 as shown, but the second protective layer 406 may completely cover each surface of the ground shield 200, or may alternatively cover the edge outer wall 212 and / or the lower surface of the plate 204 in addition to any surface of the ground shield 200 that the second protective layer 406 is shown as covering in the example shown.

[0094] exist Figures 4A to 4D In any of the embodiments shown, the first protective layer 404 and / or the second protective layer 406 may completely cover the conductive layer 402, so that the conductive layer 402 may not be exposed to the Figure 1 In the depicted processing environment, layer 402 may not be exposed. This allows conductive layer 402 to avoid corrosion in the presence of a plasma highly oxidizing and / or corrosive environment. Figures 4A-4DIn any of the depicted embodiments, the first protective layer 404 and / or the second protective layer 406 may be deposited on surfaces of the ground shield 200 that do not include the conductive layer 402. For example, the conductive layer 402 may be deposited on the upper surface of the plate 204, and the first protective layer 404 may be deposited on the conductive layer 402 and the edge inner wall 208. Additionally, the second protective layer 406 may be deposited on the first protective layer 404, the edge inner wall 208, and may also be deposited on additional surfaces of the ground shield 200.

[0095] In another embodiment not shown, the ground shield 200 may be formed of a ceramic material. The conductive layer 402 may be deposited on the upper surface of the plate 204, the edge inner wall 208, the edge upper surface 210, and the edge outer wall 212. The first protective layer 404 may be deposited on the conductive layer 402. The second protective layer 406 may be deposited on the first protective layer 404. In further embodiments, the conductive layer 402 may also be deposited on the lower surface of the plate 204. The first protective layer 404 may be deposited on the conductive layer 402. The second protective layer 406 may be deposited on the first protective layer 404.

[0096] Figures 5A-5E Shows the Figure 2 A cross-sectional side view of various embodiments of the conductive ground shield 200 is shown having a first protective layer 222 and a second protective layer 224 . Figure 5A An embodiment is depicted in which a first protective layer 502 may be deposited on an upper surface of the plate 204. A second protective layer 504 may be deposited on the first protective layer 502. Figure 5B An alternative embodiment is depicted in which a first protective layer 502 may be deposited on the upper surface of plate 204, edge inner wall 208, and edge upper surface 210. A second protective layer 504 may be deposited on first protective layer 502. Figure 5C Another alternative embodiment is depicted in which a first protective layer 502 may be deposited on an upper surface of the plate 204 and the inner wall 216 of the hollow shaft 214. A second protective layer 504 may be deposited on the first protective layer 502. Figure 5D Another alternative embodiment is depicted where first protective layer 502 may be deposited on upper surface of plate 204, rim inner wall 208, rim upper surface 210, rim outer wall 212, lower surface of plate 204, and outer wall 218 of hollow shaft 214. Second protective layer 504 may be deposited on first protective layer 502. Figure 5E Another alternative embodiment is depicted in which the first protective layer 502 can be deposited on all surfaces of the ground shield 200. The second protective layer 504 can be deposited on the first protective layer 502. The first protective layer 502 and / or the second protective layer 504 can be deposited on all surfaces of the ground shield 200 to avoid exposure to Figure 1This allows the ground shield 200 to avoid corrosion in the presence of a highly oxidizing and / or corrosive environment. In all of the above embodiments, a third protective layer (not shown) may be deposited on the second protective layer 504 .

[0097] In further embodiments, the first protective layer 502 and the second protective layer 504 may completely cover the surface of the ground shield 200, or may cover the edge outer wall 212 and / or the lower surface of the plate 204 in addition to any surface of the ground shield 200 that these layers are shown as covering in the illustrated example. In further embodiments, the first protective layer 502 may cover any surface of the ground shield 200 as shown, but the second protective layer 504 may cover the edge outer wall 212 and / or the lower surface of the plate 204 in addition to any surface of the ground shield 200 that the second protective layer 504 is shown as covering in the illustrated example.

[0098] exist Figures 5A-5E In any of the depicted embodiments, the second protective layer 504 may be deposited on any surface of the ground shield 200 not covered by the first protective layer 502. For example, the first protective layer 502 may be deposited on the upper surface of the plate 204, and the second protective layer 504 may be deposited on the first protective layer 502 and the edge inner wall 208.

[0099] In another embodiment not shown, the ground shield 200 may be made of a conductive material. The first protective layer 502 may be deposited on the upper surface of the plate 204, the edge inner wall 208, the edge upper surface 210, and the edge outer wall 212. The second protective layer 504 may be deposited on the first protective layer 502. In further embodiments, the first protective layer 502 may also be deposited on the lower surface of the plate 204. The second protective layer 504 may be deposited on the first protective layer 502. The first protective layer 502 and / or the second protective layer 504 may be deposited on all surfaces of the ground shield 200 to avoid exposure to Figure 1 This allows the ground shield 200 to avoid corrosion in the presence of a highly oxidizing and / or corrosive environment.

[0100] Figure 6 A cross-sectional side view of one embodiment of a ceramic ground shield 200 is shown in which a plurality of holes 608 may be drilled through the plate 204 and may be filled with conductive plugs 610. The conductive plugs 610 may provide a conductive path for RF signals.

[0101] The conductive plug 610 may include Mo, W, Ta, The conductive layer 602 may be deposited on the upper surface of the plate 204 and on the surface of the conductive plug 610. The first protective layer 604 may be deposited on the conductive layer 602. The second protective layer 606 may be deposited on the first protective layer 604. The first protective layer 604 may have a composition of any ceramic material described herein. Similarly, the second protective layer 606 may have a composition of any ceramic material previously described herein. In alternative embodiments, the first protective layer 604 and / or the second protective layer 606 may cover additional surfaces of the ground shield 200. For example, the first protective layer 604 and / or the second protective layer 606 may be deposited on at least one of the edge inner wall 208, the edge upper surface 210, the edge outer wall 212, the lower surface of the plate 204, the inner wall 216 of the hollow shaft 214, and the outer wall 218 of the hollow shaft 214.

[0102] Figure 7 A first process 700 for forming a ground shield is shown. At box 702, a ceramic ground shield body is provided. The provided ceramic ground shield body can be a plate and a raised edge extending from an upper surface of the plate. The raised edge can include an edge inner wall, an edge upper surface, and an edge outer wall. The ground shield body can further include a hollow shaft, the hollow shaft including an inner wall and an outer wall. In one embodiment, the ceramic ground shield body is manufactured by sintering a green body having approximately a target size and shape. After the sintering process, the sintered ceramic body can be mechanically processed to achieve a target size with higher precision. In one embodiment, the ground shield body can be composed of two or three separate parts. These parts can be sintered and further processed separately. Optionally, one or more parts may not be a sintered ceramic material (e.g., can be a metal such as stainless steel). For example, the plate of the ground shield can be a sintered ceramic, and the shaft of the ground shield can be stainless steel or another metal.

[0103] At block 704, a plurality of holes may be drilled through the plate of the ground shield body. At block 706, the plurality of holes may be filled with a plurality of conductive plugs. The conductive plugs may be connected to leads at the lower surface of the plate, and the leads may be connected to ground.

[0104] At box 708, at least the upper surface of the ground shield body can be roughened. The roughness of the upper surface of the ground shield body can be achieved by using a sandblaster. The sandblaster can be a sandblasting cabinet, a handheld sandblaster, an automatic sandblaster, or any other type of sandblaster. In an alternative embodiment, the roughness on the upper surface of the ground shield body can be achieved by using an electric abrasive pad. The upper surface of the ground shield body (e.g., the upper surface of the plate) can be roughened to a target roughness between about 0.10 microns and about 6.00 microns. This can improve the adhesion of the conductive layer and / or the first protective layer to the ground shield body. For example, the adhesion of the plasma spray coating can be improved by first roughening the surface of the ground shield body.

[0105] At block 710, a conductive layer may be deposited on at least the upper surface of the ground shield body. The conductive layer may be comprised of any conductive material described herein. The conductive layer may be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, aerosol deposition, evaporation, ALD, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering, or co-sintering techniques.

[0106] At block 712, a first protective layer may be deposited on the conductive layer. The first protective layer may be comprised of any ceramic material described herein. The first protective layer may be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), CVD, PVD, aerosol deposition, evaporative PECVD, ion-assisted deposition, ion plating, and combinations thereof. For example, if the conductive layer is deposited using techniques such as PVD, CVD, ALD, PECVD, or IAD, the conductive layer may be a conformal layer, and the surface of the conductive layer may have approximately the roughness of the underlying ground shield body (e.g., the target roughness of the surface of the ground shield body). Thus, if the first protective layer is deposited, for example, by plasma spraying or aerosol deposition, the surface roughness of the conductive layer may improve the adhesion of the first protective layer to the conductive layer.

[0107] At block 714, the surface of the ground shield body covered by the first protective layer may be ground. For example, the grinding may be performed by a grinder or a CMP machine. The first protective layer may be ground to an average surface roughness between about 0.10 microns and about 2.00 microns.

[0108] At block 716, a second protective layer may be deposited on the first protective layer. The second protective layer may be composed of any ceramic material described herein. The second protective layer may be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, ALD, aerosol deposition, evaporation, ALD, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering or co-sintering techniques. In one embodiment, the second protective layer may be deposited by an off-site deposition technique such as ALD or CVD, plasma immersion ion deposition (PIID), wet chemical deposition (e.g., sol-gel) or electroplating. In one embodiment, the second protective layer may be a conformal protective layer having approximately zero porosity that seals any cracks and / or pores in the first protective layer.

[0109] At block 718, a third protective layer may be deposited on the second protective layer. The third protective layer may be comprised of any ceramic material described herein. The third protective layer may be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, ALD, aerosol deposition, evaporation, ALD, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering, or co-sintering techniques.

[0110] If the ground shield body can be constructed from multiple different parts, some or all of one or more of the parts may have been coated with the conductive layer, the first protective layer, the second protective layer, and / or the third protective layer. Subsequently, the multiple parts can be assembled. For example, the two halves of the shaft of the ground shield can be attached together around the heater shaft, and the combined two halves of the shaft of the ground shield can be attached to a plate of the ground shield surrounding the heater.

[0111] Figure 8 A second process 800 for forming a ground shield is shown. At box 802, a conductive ground shield body is provided. The provided conductive ground shield body may include a plate and a raised edge extending from an upper surface of the plate. The raised edge may include an edge inner wall, an edge upper surface, and an edge outer wall. The ground shield body may further include a hollow shaft, the hollow shaft including an inner wall and an outer wall. The conductive ground shield body may be formed of any conductive material described herein for a ground shield body. In one embodiment, the surface of the ground shield body may be roughened (e.g., such as by sandblasting).

[0112] At block 804, a first protective layer may be deposited on at least the upper surface of the ground shield body. The first protective layer may be comprised of any ceramic material described herein. The first protective layer may be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, ALD, aerosol deposition, evaporation, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering, or co-sintering techniques.

[0113] At block 806 , the surface of the ground shield body covered by the first protective layer may be ground.

[0114] At block 808, a second protective layer may be deposited on the first protective layer. The second protective layer may be comprised of any ceramic material described herein. The second protective layer may be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, ALD, aerosol deposition, evaporation, ALD, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering, or co-sintering techniques. In one embodiment, the second protective layer is deposited by an off-site deposition technique such as ALD or CVD, plasma immersion ion deposition (PIID), wet chemical deposition, or electroplating.

[0115] At block 810, a third protective layer may be deposited on the second protective layer. The third protective layer may be composed of any ceramic material described herein. The third protective layer may be deposited by conventional atmospheric plasma spraying, LPPS, VPS, screen printing, wet chemical deposition (e.g., sol-gel), PVD, CVD, ALD, aerosol deposition, evaporation, ALD, PECVD, IAD, ion plating, dip coating, sputtering, thermal spraying, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compaction, screen printing, sintering, or co-sintering techniques.

[0116] The foregoing description sets forth many specific details, such as examples of specific systems, components, methods, etc., in order to provide a good understanding of several embodiments of the present disclosure. However, it will be apparent to those familiar with the art that at least some embodiments of the present disclosure may be implemented without these specific details. In other cases, known components or methods are not described in detail, or are presented in simple block diagram form, in order to avoid unnecessary confusion of the present disclosure. Therefore, the specific details set forth are merely exemplary. Specific embodiments may differ from these exemplary details, and are still expected to be within the scope of the present disclosure.

[0117] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the phrases "in one embodiment" or "in an embodiment" appearing in various places throughout this specification are not necessarily all referring to the same embodiment. Additionally, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". When the term "about" or "approximately" is used herein, this is intended to mean that the nominal value given is accurate within ±10%.

[0118] Although the operations of the methods herein are shown and described in a particular order, the order of operations of each method may be changed so that certain operations may be performed in a reverse order, or so that certain operations may be performed at least partially simultaneously with other operations. In another embodiment, instructions or sub-operations of different operations may be performed in an intermittent and / or alternating manner. In one embodiment, multiple metal bonding operations are performed as a single step.

[0119] It should be understood that the above embodiments are intended to be illustrative, rather than restrictive. By reading and understanding the above embodiments, many other embodiments will be apparent to those familiar with the art. Therefore, the scope of the present disclosure should be determined with reference to the full range of equivalents given by the attached claims and these claims.

Claims

1. A ground shield for a processing chamber, comprising: a ceramic body comprising a plate, a raised rim extending from an upper surface of the plate, and a hollow shaft extending from a lower surface of the plate, wherein a heater fits within the raised rim on the upper surface of the plate; a conductive layer at least on the upper surface of the plate and also on one or more surfaces of the raised edge, one or more surfaces of the hollow shaft, or one or more portions of the lower surface of the plate, and wherein the conductive layer is connected to ground at one or more points; as well as a first protective layer, on at least the conductive layer, wherein a heater board is adapted to fit within the raised edge and onto the plate of the ground shield such that the heater board is disposed on top of the first protective layer, the conductive layer, and the upper surface of the plate of the ground shield, and wherein the ground shield is used to reduce at least one of a parasitic capacitance or a parasitic inductance of the heater associated with a process performed at the processing chamber.

2. The ground shield of claim 1 , further comprising: A second protective layer is on the first protective layer, wherein the second protective layer is conformal, has a thickness of 50.00 nm-2.00 mm and has a porosity of less than 0.1%.

3. The ground shield of claim 2, wherein the second protective layer comprises at least one of yttrium oxide, erbium oxide, tantalum oxide, yttrium fluoride, aluminum oxide, aluminum fluoride, zirconium dioxide, Y2O3-ZrO2 solid solution, a material comprising Y4Al2O9 and Y2O3-ZrO2 solid solution, or a combination thereof.

4. A ground shield as described in claim 2, wherein the raised edge includes an edge inner wall, an edge upper surface and an edge outer wall, and wherein at least one of the conductive layer, the first protective layer or the second protective layer further covers at least one of the edge inner wall, the edge upper surface or the edge outer wall.

5. The ground shield of claim 1 , wherein the first protective layer comprises at least one of aluminum oxide, Y2SiO5, Y2Si2O7, Y5O4F7, tantalum, silicon carbide, yttrium oxide, erbium oxide, Y2O3-ZrO2 solid solution, a material comprising Y4Al2O9 and Y2O3-ZrO2 solid solution, or a combination thereof.

6. The ground shield of claim 1, wherein the ceramic body further comprises a plurality of holes drilled into the plate, and wherein one or more of the plurality of holes are filled with a conductive plug.

7. The ground shield of claim 1, wherein the ceramic body has a first coefficient of thermal expansion (CTE) and the first protective layer has a second CTE, wherein the difference between the first CTE and the second CTE is within 2.5×10 -6 / ℃.

8. A substrate support assembly for a processing chamber, comprising: a heater, including a heater plate; and A ground shield comprising a disc-shaped ceramic body and a shaft extending from a lower surface of the disc-shaped ceramic body, wherein an upper surface of the disc-shaped ceramic body comprises a raised edge extending from the upper surface of the disc-shaped ceramic body, and wherein the heater is disposed on the upper surface of the disc-shaped ceramic body within the raised edge, the ground shield further comprising: a conductive layer at least on the upper surface of the disc-shaped ceramic body and also on one or more surfaces of the raised edge, one or more surfaces of the shaft, or one or more portions of the lower surface of the disc-shaped ceramic body, wherein the conductive layer is connected to ground at one or more points; and a first protective layer, on at least the conductive layer, wherein the heater plate of the heater is adapted within the raised edge and on the disc-shaped ceramic body such that the heater plate is disposed on top of the first protective layer, the conductive layer, and the upper surface of the disc-shaped ceramic body, and wherein the ground shield is used to reduce at least one of a parasitic capacitance or a parasitic inductance of the heater associated with a process performed at the processing chamber.

9. The substrate support assembly of claim 8, further comprising a second protective layer on the first protective layer, wherein the second protective layer is a conformal layer having a thickness of 50.00 nm-2.00 mm, having a porosity of less than 0.1%, and comprising at least one of yttrium oxide, erbium oxide, tantalum oxide, yttrium fluoride, aluminum oxide, aluminum fluoride, zirconium dioxide, Y2O3-ZrO2 solid solution, a material comprising Y4Al2O9 and Y2O3-ZrO2 solid solution, or a combination thereof.

10. The substrate support assembly of claim 9, wherein the raised edge comprises an edge inner wall, an edge upper surface, and an edge outer wall, and wherein at least one of the conductive layer, the first protective layer, or the second protective layer further covers at least one of the edge inner wall, the edge surface, or the edge outer wall.

11. The substrate support assembly of claim 10, wherein at least one of the conductive layer, the first protective layer, or the second protective layer further covers any one of an outer wall of the hollow shaft of the ground shield or an inner wall of the hollow shaft.

12. The substrate support assembly of claim 8, wherein the first protective layer has a thickness of 1.00 μm-2.00 mm, has a porosity of less than 6%, and comprises at least one of aluminum oxide, Y2SiO5, Y2Si2O7, Y5O4F7, tantalum oxide, yttrium fluoride, aluminum oxide, aluminum fluoride, zirconium dioxide, Y2O3-ZrO2 solid solution, a material comprising Y4Al2O9 and Y2O3-ZrO2 solid solution, or a combination thereof.

13. A ground shield for a processing chamber, comprising: an electrically conductive body comprising a plate and a raised rim extending from an upper surface of the plate, wherein a heater fits within the raised rim on the upper surface of the plate, and wherein the raised rim comprises an inner rim wall, an upper rim surface, and an outer rim wall, wherein the electrically conductive body is connected to ground at one or more points; a first protective layer on at least the upper surface of the plate, wherein the first protective layer has a thickness of 1.00 μm-2.00 mm, has a porosity of 0.1-10.0% and comprises at least one of aluminum oxide, Y2SiO5, Y2Si2O7, Y5O4F7, tantalum, silicon carbide, yttrium oxide, erbium oxide, Y2O3-ZrO2 solid solution, a material comprising Y4Al2O9 and Y2O3-ZrO2 solid solution, or a combination thereof; and a second protective layer on at least the first protective layer, wherein the second protective layer is a conformal layer, has a thickness of 50.00 nm-2.00 mm, has a porosity of less than 0.1%, and comprises at least one of yttrium oxide, erbium oxide, tantalum oxide, yttrium fluoride, aluminum oxide, aluminum fluoride, zirconium dioxide, Y2O3-ZrO2 solid solution, a material comprising Y4Al2O9 and Y2O3-ZrO2 solid solution, or a combination thereof, and Wherein the grounded shield is used to reduce at least one of a parasitic capacitance or a parasitic inductance of the heater associated with a process performed at the processing chamber. 14 . The ground shield of claim 13 , wherein the conductive body has a first CTE and the first protective layer has a second CTE, wherein the second CTE has a value that is the same as the first CTE.

15. The ground shield of claim 13, wherein the conductive body has a first CTE and the first protective layer has a second CTE, wherein the difference between the second CTE and the first CTE is within 2.5×10 -6 / ℃.

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