Detector for electromagnetic radiation and method for manufacturing the same

Abstract

The present invention relates to a detector for electromagnetic radiation, comprising: a first electrode layer, comprising at least one first electrode pixel and a second electrode pixel; a second electrode; and a first layer comprising at least one first perovskite, the first layer being located between the first electrode pixel and the second electrode of the first electrode layer; and a second layer comprising at least one second perovskite different from the first perovskite, the second layer being located between the second electrode pixel and the second electrode of the first electrode layer; a detector for electromagnetic radiation, comprising: a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel; a second electrode; and a first layer comprising at least one first perovskite, the first layer being located between the first electrode pixel and the second electrode of the first electrode layer, and between the second electrode pixel and the second electrode of the first electrode layer; and a method for manufacturing a detector.

Description

Technical Field

[0001] The present invention relates to a detector for electromagnetic radiation, the detector comprising: a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel; a second electrode; and a first layer, the first layer comprising at least one first perovskite, the first layer being located between the first electrode pixel of the first electrode layer and the second electrode; and a second layer, the second layer comprising at least one second perovskite different from the first perovskite, the second layer being located between the second electrode pixel of the first electrode layer and the second electrode. The present invention relates to a detector for electromagnetic radiation, the detector comprising: a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel; a second electrode; and a first layer, the first layer comprising at least one first perovskite, the first layer being located between the first electrode pixel of the first electrode layer and the second electrode, and between the second electrode pixel of the first electrode layer and the second electrode; and the present invention relates to a method for manufacturing a detector. Background Art

[0002] X-ray detectors and gamma radiation detectors / gamma ray detectors are used in various fields. In conventional X-ray detectors, the maximum energy and the average energy of the X-ray photons are selected according to the object to be fluoroscopically viewed. For example, in industrial production, X-ray radiation is used to test materials by means of non-destructive testing (NDT), where X-ray radiation with an energy of several mega-electron volts (MeV) can be used.

[0003] X-ray detectors also play an important role in medical diagnosis, where the energy of the X-ray radiation used is typically in the range of, for example, 20 to 120 kiloelectronvolts (keV). The substances examined usually have different X-ray absorption spectra. Thus, for example, the absorption capacity of bones, soft tissues or tissues in different energy ranges is significantly different from each other. In order to prevent the patient from being subjected to excessive and unnecessary radiation load, the dose of X-ray radiation is typically selected so that the X-ray image is optimized for a specific type of structure, such as bones or soft tissue. Therefore, the energy of the X-ray radiation used is selected within the range that is particularly strongly absorbed by the structure to be examined.

[0004] All these X-ray detectors are based on the integration of generated charge carriers, independent of the already generated energy of the photons. This enables the absorption characteristics to be determined pixel by pixel, but does not provide frequency information.

[0005] However, it is often also necessary to obtain information about the overall composition, in particular the spectral composition, of the object to be irradiated.

[0006] The spectral information in the x-ray images is obtained, for example, via counting detectors (for example based on cadmium telluride, CdTe or cadmium zinc telluride, CdZnTe) which have special and complex (expensive) control and readout electronics.

[0007] The production of spectrally resolving detectors is currently correspondingly complex and expensive. Furthermore, they cannot be easily scaled in area (for example, in the case of CdTe).

[0008] There are other different ways to obtain detailed information about the composition of the material, for example, from images of a patient or an object recorded with the aid of X-rays or gamma rays (in the case of a patient, for example, to differentiate between soft tissue and bone or to identify specific biomarkers). In order to be able to detect bones and tissues, for example, X-ray radiation in different energy ranges can be used. In so-called dual X-ray absorptiometry (Dual Energy X-ray Absorptiometry, DEXA), two different recordings are performed with different X-ray energies. Two X-ray images recorded with different X-ray spectra can be compared and a dual-energy image calculated.

[0009] For this purpose, two images can be recorded in succession by means of an X-ray tube, or in a tomographic scanner the images can be recorded by means of two different X-ray tubes with different emission spectra. The former is associated with a movement of the patient between the two recorded images (motion artifacts), but for this no additional X-ray tube is required. In the case of requirements for good image resolution, the first variant (motion artifacts) cannot usually be used in practice. Another approach consists of a detector with different layers. Each layer is sensitive to different energies. For this purpose, a layer consisting of two or more scintillators is usually selected, which layer has a filter in the middle, for example.

[0010] For example, it is common to stack a plurality of detectors, wherein, for example, the detector located above can be used as a filter for the detector located below (radiation hardening). Such an arrangement of a plurality of detectors each having a different energy range is known, for example, from US Pat. No. 8,488,736 B2. By combining the images, it is possible to prevent the X-ray image from having overexposed or underexposed parts.

[0011] By stacking detectors, it is possible to create an image using a single X-ray source that emits X-ray radiation in different energy ranges, depending on the radiation that is allowed to pass in the corresponding energy range. However, this requires a large number of separate detectors.

[0012] New detector materials utilize "photon counting" properties, which can also generate information about the energy of incident photons (e.g. D. Pacella, Energy-resolved X-ray detectors: the future of diagnostic imaging, 2015).

[0013] What the methods mentioned have in common is that, in order to achieve a good image resolution, the detectors must be manufactured in an expensive and complex manner: either a second X-ray tube must be installed in the tomography scanner, coordinated layers of different scintillators and filter materials must be combined in the detector, or the resolution of the detector must be so high that individual photons can be counted.

[0014] In the publication of M. Sytnyk (M. Sytnyk, "The bright future of metal halideperovskites for X-ray detection", Appl. Phys. Lett. 115, 2019, DOI: 10.1063 / 1.5125999), the way of combining multiple scintillator layers in a detector is considered and furthermore expressed in the form of a thought experiment. M. Sytnyk et al. combined four different scintillating perovskite nanocrystals, which emit visible photons at different wavelengths and are simultaneously used as filters for the layers located below. The absorption of these nanocrystals is related to the incident X-ray radiation. The spectral information is resolved again with the aid of a hyperspectral camera (which cannot be scaled in area) or with the aid of a color filter (not without a large amount of conversion losses). The multilayer construction of the corresponding detector also brings difficulties to the adhesion between the individual layers and may also cause other problems, such as, for example, when adapting the crystal structure to the previous layer.

[0015] Accordingly, there is a need for a multispectral detector that is easy to manufacture and features good adhesion and stability. Summary of the invention

[0016] The inventors have found that by structuring the individual electrode pixels of a detector comprising pixelated electrodes and using different perovskites and / or different perovskite filling heights for detection, a multispectral detector with good adhesion and good stability of the detection layer can be obtained. The present invention accordingly relates to a detector, in particular a direct or indirect X-ray and / or gamma ray detector / gamma ray detector, which uses one or more structured perovskites as absorber material. By combining different perovskites and / or different heights / crystal structures of perovskites, different energies of photons can be detected, making it possible to generate more information about the irradiated object.

[0017] In a first aspect, the invention relates to a detector for electromagnetic radiation, in particular an X-ray detector and / or a gamma-ray detector, comprising:

[0018] - a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel,

[0019] - a second electrode,

[0020] - a first layer, the first layer comprising at least one first perovskite, the first layer being located between a first electrode pixel of the first electrode layer and the second electrode, and

[0021] - a second layer, the second layer comprising at least one second perovskite different from the first perovskite, the second layer being located between the second electrode pixel of the first electrode layer and the second electrode,

[0022] It also includes a structure, which is at least partially located between the first electrode layer and the second electrode and is arranged between the first electrode pixel and the second electrode pixel of the first electrode layer, so that the structure is at least partially arranged on the intermediate space between the first electrode pixel and the second electrode pixel in the direction of the second electrode away from the first electrode layer, wherein a first layer containing at least one first perovskite is at least partially introduced into the structure in the first region, so that the first layer is located above the first electrode pixel of the first electrode layer, and a second layer containing at least one second perovskite is at least partially introduced into the structure in the second region, so that the second layer is located above the second electrode pixel of the first electrode layer, wherein the structure separates the first region and the second region.

[0023] A second aspect of the invention relates to a detector for electromagnetic radiation, in particular an X-ray detector and / or a gamma-ray detector, comprising:

[0024] - a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel,

[0025] - a second electrode,

[0026] a first layer, the first layer comprising at least one first perovskite, the first layer being located between the first electrode pixel of the first electrode layer and the second electrode, and between the second electrode pixel of the first electrode layer and the second electrode,

[0027] It also includes a structure, which is at least partially located between the first electrode layer and the second electrode and is arranged between the first electrode pixel and the second electrode pixel of the first electrode layer, so that the structure is at least partially arranged on the intermediate space between the first electrode pixel and the second electrode pixel in the direction of the second electrode away from the first electrode layer, wherein a first layer containing at least one first perovskite is at least partially introduced into the structure, so that the first layer is located in a first region above the first electrode pixel of the first electrode layer and in a second region above the second electrode pixel of the first electrode layer, wherein a first filling height of the first layer containing at least one first perovskite in the first region above the first electrode pixel is different from a second filling height of the first layer in the second region above the second electrode pixel, wherein the structure separates the first region and the second region.

[0028] In a third aspect, a method for manufacturing a detector for electromagnetic radiation, in particular an X-ray detector and / or a gamma-ray detector, is disclosed, the method comprising:

[0029] - providing a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel;

[0030] - applying the structure at least partially to the intermediate space of the first electrode layer, wherein the structure is applied such that the structure is arranged on the intermediate space facing away from the first electrode layer, wherein the structure separates a first region above the first electrode pixel from a second region above the second electrode pixel;

[0031] - introducing into the structure a first layer comprising at least one first perovskite and a second layer comprising at least one second perovskite different from the first perovskite, wherein the first layer comprising at least one first perovskite is at least partially introduced into the structure such that the first layer is located in a first region over a first electrode pixel of the first electrode layer, and wherein the second layer comprising at least one second perovskite is at least partially introduced into the structure such that the second layer is located in the second region over a second electrode pixel of the first electrode layer; and

[0032] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite and / or to the second layer comprising at least one second perovskite; or

[0033] - providing a structure, wherein the structure has at least one intermediate space;

[0034] - introducing a first electrode pixel and a second electrode pixel on different sides of the intermediate space of the structure, wherein the first electrode pixel and the second electrode pixel do not fill the structure, thereby forming a first electrode layer, wherein the structure separates a first area above the first electrode pixel and a second area above the second electrode pixel;

[0035] - introducing into the structure a first layer comprising at least one first perovskite and a second layer comprising at least one second perovskite different from the first perovskite, wherein the first layer comprising at least one first perovskite is at least partially introduced into the structure such that the first layer is located in a first region over first electrode pixels of the first electrode layer, and wherein the second layer comprising at least one second perovskite is at least partially introduced into the structure such that the second layer is located in a second region over second electrode pixels of the first electrode layer; and

[0036] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite and / or to the second layer comprising at least one second perovskite.

[0037] A fourth aspect of the invention relates to a method for producing a detector for electromagnetic radiation, in particular an X-ray detector and / or a gamma-ray detector, the method comprising:

[0038] - providing a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel;

[0039] - applying a structure at least partially to the intermediate space of the first electrode layer, wherein the structure is applied such that the structure is arranged on the intermediate space facing away from the first electrode layer, wherein the structure separates a first region above the first electrode pixel from a second region above the second electrode pixel;

[0040] - introducing a first layer comprising at least one first perovskite at least partially into the structure such that the first layer is located in a first region over a first electrode pixel of the first electrode layer and in a second region over a second electrode pixel of the first electrode layer, wherein a first filling height of the first layer comprising at least one first perovskite in the first region over the first electrode pixel is different from a second filling height of the first layer in the second region over the second electrode pixel; and

[0041] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite; or

[0042] - providing a structure, wherein the structure has at least one intermediate space;

[0043] - introducing a first electrode pixel and a second electrode pixel on different sides of the intermediate space of the structure, wherein the first electrode pixel and the second electrode pixel do not fill the structure, thereby forming a first electrode layer, wherein the structure separates a first area above the first electrode pixel and a second area above the second electrode pixel;

[0044] - a first layer comprising at least one first perovskite is at least partially introduced into the structure such that the first layer is located in the first region over the first electrode pixel of the first electrode layer and in the second region over the second electrode pixel of the first electrode layer, wherein

[0045] a first filling height of the first layer comprising at least one first perovskite in the first region over the first electrode pixel is different from a second filling height of the first layer in the second region over the second electrode pixel; and

[0046] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite.

[0047] Further aspects of the invention emerge from the detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The accompanying drawings are intended to illustrate embodiments of the invention and facilitate a further understanding thereof. In conjunction with the description, the embodiments serve to explain the concept and principle of the invention. Further embodiments and a number of advantages mentioned can be derived with reference to the drawings. The elements of the drawings are not necessarily shown to scale with respect to one another. Unless otherwise indicated, in the drawings of the drawings, identical, functionally identical and identically functioning elements, features and components are each provided with the same reference numerals.

[0049] Figure 1 An exemplary detector according to the present invention of the first aspect is schematically shown.

[0050] exist Figure 2 and 3 An exemplary detector according to the present invention of the second aspect is shown by way of example in FIG.

[0051] Figures 4 to 13 Different exemplary structures are schematically shown which can be used in the detector according to the invention.

[0052] exist Figures 14 to 18 An exemplary method according to the third aspect is schematically illustrated in FIG.

[0053] Figures 19 to 22 An exemplary first layer in a detector according to the invention is shown schematically.

[0054] exist Fig.23 and 24 Comparison of spectral characteristics of different perovskites.

[0055] Fig.25 and 26 An image of a detector showing an example of the present invention.

[0056] exist Fig. 27 The filling height of the perovskite in the detector with the structure is shown in FIG.

[0057] Figures 28 to 30 SEM records of untreated and MA gas treated, recrystallized perovskite are shown. DETAILED DESCRIPTION

[0058] Unless defined otherwise, technical and scientific expressions used herein have the same meaning as they are commonly understood by one of ordinary skill in the art to which the present invention pertains.

[0059] Unless stated otherwise or clear from the context, quantity specifications within the scope of the present invention relate to % by weight.

[0060] A first aspect of the invention relates to a detector for electromagnetic radiation, in particular an X-ray detector and / or a gamma-ray detector, comprising:

[0061] - a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel,

[0062] - a second electrode,

[0063] - a first layer, the first layer comprising at least one first perovskite, the first layer being located between a first electrode pixel of the first electrode layer and the second electrode, and

[0064] - a second layer, the second layer comprising at least one second perovskite different from the first perovskite, the second layer being located between the second electrode pixel of the first electrode layer and the second electrode,

[0065] It also includes a structure, which is at least partially located between the first electrode layer and the second electrode and is arranged between the first electrode pixel and the second electrode pixel of the first electrode layer, so that the structure is at least partially arranged in the middle space between the first electrode pixel and the second electrode pixel in the direction away from the first electrode layer toward the second electrode, wherein the first layer containing at least one first perovskite is at least partially introduced into the structure in the first region, so that the first layer is located above the first electrode pixel of the first electrode layer, and the second layer containing at least one second perovskite is at least partially introduced into the structure in the second region, so that the second layer is located above the second electrode pixel of the first electrode layer, wherein the structure separates the first region and the second region.

[0066] According to a specific embodiment of the detector of the first aspect, at least one first perovskite in the first layer comprising at least one first perovskite and / or at least one second perovskite in the second layer is at least partially recrystallized. In addition, according to a specific embodiment of the detector of the first aspect, the first layer comprising at least one first perovskite in the first region above the first electrode pixel is different from the second filling height of the second layer in the second region above the second electrode pixel, as in the detector of the second aspect, i.e. there is a hybrid form consisting of the detector of the first aspect and the detector of the second aspect. Accordingly, the embodiments regarding different filling heights in conjunction with the detector of the second aspect can be applied to different embodiments of the detector of the first aspect according to the meaning.

[0067] A second aspect of the invention relates to a detector for electromagnetic radiation, in particular an X-ray and / or gamma-ray detector, comprising:

[0068] - a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel,

[0069] - a second electrode,

[0070] a first layer, the first layer comprising at least one first perovskite, the first layer being located between the first electrode pixel of the first electrode layer and the second electrode, and between the second electrode pixel of the first electrode layer and the second electrode,

[0071] Also included is a structure, which is at least partially located between the first electrode layer and the second electrode and is arranged between the first electrode pixel and the second electrode pixel of the first electrode layer, so that the structure is at least partially arranged in the direction away from the first electrode layer toward the second electrode on the intermediate space between the first electrode pixel and the second electrode pixel, wherein a first layer containing at least one first perovskite is at least partially introduced into the structure, so that the first layer is located in a first region above the first electrode pixel of the first electrode layer, and is located in a second region above the second electrode pixel of the first electrode layer, wherein

[0072] A first filling height of a first layer comprising at least one first perovskite in the first region over the first electrode pixel is different from a second filling height of the first layer in the second region over the second electrode pixel, wherein the structure separates the first region and the second region.

[0073] According to a particular embodiment of the detector of the second aspect, the at least one first perovskite in the first layer comprising at least one first perovskite is at least partially recrystallized.

[0074] The following description relates not only to the detector of the first aspect but also to the detector of the second aspect, and the described embodiments are applicable to both the detector of the first aspect and the detector of the second aspect, unless otherwise specified or clear from the context.

[0075] In different detectors, the same components or the same materials of the detectors of the first aspect and the second aspect may be the same or different.

[0076] In the detector of the first aspect and the detector of the second aspect, the first electrode layer is not particularly limited, and the first electrode layer includes at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel. More than two electrode pixels can also be arranged in the first electrode layer, and the first electrode layer can have a plurality of, that is, 2 or more, for example 3, 4, 5, 6, 7, 8, 9, 10, 100, 1000 or more electrode pixels or pixels, which can be electrically contacted. At least one intermediate space is then provided between each electrode pixel, so that a plurality of intermediate spaces can also be obtained in the case of a plurality of electrode pixels. According to a specific embodiment, a plurality of X electrode pixels form a pixel as sub-pixels to a certain extent, wherein X is greater than 1, preferably between 2-4. The X electrode pixels can also be called sub-pixels, and then a spectrally sensitive pixel is obtained together. For example, an intuitive pixel-sub-pixel configuration is an RGB pixel configuration of an LCD TV (due to the color filter, each pixel has an RGB sub-pixel).

[0077] The pixel size and the material of the corresponding electrode pixel are not particularly limited, and electrode pixels that have been used in detectors for electromagnetic radiation, in particular X-ray detectors and / or gamma ray detectors, can be used. For example, electrode pixels with a 98 μm pitch (Pitch) of square electrode pixels can be used as electrode pixels, which defines electrode pixels, where other pixel sizes are also feasible. The material of the electrode pixel is not particularly limited, and for example can contain conductive metal oxides, conductive polymers and / or metals for detecting electrons and / or holes generated by perovskites. Therefore, there is a substrate, which can be a pixelated substrate, on which the electrode pixels of the first electrode layer are present.

[0078] According to the number of the electrode pixels, in the detector of the first aspect, the number of x layers (where x is a natural integer ≥ 2) containing at least one x-th perovskite is not particularly limited, and the detector includes at least as many electrode pixels as there are different layers containing different perovskites. It is not excluded that in the detector of the first aspect, there are also: a plurality of first layers containing at least one first perovskite above a plurality of first electrode pixels; a plurality of second layers containing at least one second perovskite above a plurality of second electrode pixels; and other corresponding layers and electrode pixels (i.e., the third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. layers containing at least one third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. perovskite above the third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. electrode pixels) as necessary.

[0079] Similarly, in the detector of the second aspect, the number of the electrode pixels and the number of the first layers containing at least one first perovskite with different filling heights are not particularly limited, and the detector includes at least as many electrode pixels as the first layers containing different filling heights exist. It is not excluded here that in the detector of the second aspect, there are also: a plurality of first layers containing at least one first perovskite with a first filling height above a plurality of first electrode pixels; a plurality of second layers containing at least one first perovskite with a second filling height above a plurality of second electrode pixels; and other corresponding layers and electrode pixels (i.e., layers containing at least one first perovskite with different third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. filling heights above corresponding third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. electrode pixels) as necessary.

[0080] Likewise, the arrangement of the electrode pixels is not particularly restricted and can be arranged, for example, in a suitable manner depending on the respective layer to be applied which contains at least one respective perovskite.

[0081] Thus, for example, different layers containing different perovskites are used in the detector of the first aspect, and the arrangement of the electrode pixels can be carried out so that the layers with different perovskites are adjacent to each other. Thus, for example, there are different layers containing at least four different perovskites (i.e., a first layer containing at least one first perovskite; a second layer containing at least one second perovskite; a third layer containing at least one third perovskite; and a fourth layer containing at least one fourth perovskite), which can be repeatedly arranged linearly in a "detection row" above the corresponding electrode pixel, or in a two-dimensional arrangement type in a 2×2 pattern checkerboard arrangement, wherein the corresponding pattern can then be repeated in a detector with a plurality of electrode pixels, and can be adjacent to each other. Similarly, for different corresponding layers containing at least one corresponding perovskite, different arrangements can also be obtained, wherein the arrangements are not limited in terms of their shape. In addition to linear and checkerboard arrangements of electrode pixels, triangular, rhombus, polygonal, etc. arrangements are also feasible, wherein the corresponding layers containing at least one corresponding perovskite are located above the electrode pixels. It is also not excluded that two layers containing the same perovskite are adjacent to each other in the detector of the first aspect, so that the detector has at least one first layer containing at least one first perovskite and a second layer containing at least one second perovskite different from the first perovskite above different electrode pixels.

[0082] According to the implementation scheme regarding the arrangement of the electrode pixels in the detector of the first aspect, the arrangement of the electrode pixels in the detector of the second aspect can also be carried out similarly, that is, the layer of at least one first perovskite with different filling heights is arranged above adjacent and / or non-adjacent electrode pixels in a shifted, staggered, checkerboard, triangular, rhombus, etc., wherein the number of different filling heights can also affect the distribution of the electrode pixels.

[0083] In the detector of the first aspect and in the detector of the second aspect, at least one intermediate space is present in the first electrode layer, wherein in the case of a plurality of electrode pixels greater than 2, a plurality of intermediate spaces are also present between the electrode pixels, wherein the electrode pixels in the detector are separated from one another by the intermediate spaces. Thus, there are a plurality of electrode pixels and intermediate spaces between the electrode pixels, which can, for example, form a grid structure. An intermediate space or (in the case of a plurality of intermediate spaces) a plurality of intermediate spaces can contain a non-conductive material in the detector of the first and second aspects, which is not particularly restricted and can, for example, also be the material of the substrate, for example if the electrode pixels are introduced into the substrate after material has been removed in the substrate (for example by etching, etc.) and the electrode pixels are introduced, and / or for example when the electrode pixels are applied to the substrate, the electrode pixels of the first electrode layer are insulated from one another in another way, for example by a gas, such as air, etc.

[0084] In the detector according to the present invention, the first electrode layer (and the second electrode and / or the first layer and / or the second layer, with or without different filling heights, and if necessary also other layers and / or substrates, etc.) can be flat and / or curved, so that a flat or curved detector can be obtained.

[0085] In addition, in the detector according to the present invention, the second electrode is not particularly limited. According to a specific embodiment, the second electrode comprises a conductive metal oxide, a conductive polymer and / or a metal. In the detector according to the present invention, the first electrode and the second electrode (or the first electrode layer and the second electrode) are suitable for being connected as an anode and / or a cathode. According to a specific embodiment, the second electrode is formed in a planar manner. According to a specific embodiment, the second electrode is at least partially transmissive or completely transmissive to the electromagnetic radiation to be detected, and the electromagnetic radiation is not particularly limited and can be, for example, X-ray radiation (wavelength ≥ 10pm and <10nm) and / or gamma radiation (wavelength <10pm). For example, the second electrode can contain indium tin oxide (ITO), aluminum zinc oxide (aluminum doped zinc oxide, AZO), antimony tin oxide (antimony tin oxide, ATO) and / or fluorine tin oxide (FTO), or be composed of them.

[0086] The structure is also not particularly limited, as long as the structure is at least partially or completely arranged between the individual pixels of the first electrode layer. In particular, the structure is also arranged around the individual electrode pixels so as to separate the areas above the electrode pixels from each other, that is, for example, to separate the first area from the second area, and if necessary, to separate these areas from other areas, such as the third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. areas, where these areas are also separated from each other. In the detector according to the present invention, the structure is used to separate or isolate the individual electrode pixels and the areas above them from each other (that is, it is an auxiliary structure for separating different areas and therefore has a structuring function), so that different electrode pixels can detect signals of different perovskites of the first and second layers in the detector of the first aspect or signals of layers with different filling heights in the detector of the second aspect. For this purpose, the structure can also be partially located on and / or above the electrode pixels of the pixelated first electrode layer, as long as the structure is at least partially located between the electrode pixels of the first electrode layer, i.e., for example, so that the structure is arranged in one or more intermediate spaces of the first electrode layer or in a grid structure (e.g., formed by non-electrode material and / or gas, such as air, of the first electrode layer), directly on one or more intermediate spaces or grid structures between the electrode pixels or on the material of one or more intermediate spaces or grid structures, and / or above one or more intermediate spaces, i.e., also on the material of one or more intermediate spaces between the electrode pixels, for example, on the grid structure or its material. For this purpose, the structure is arranged so that the structure extends at least away from the first electrode layer in the direction of the second electrode, i.e., forms a three-dimensional structure, which is located at least between the first electrode layer and the second electrode. It is not excluded here that a part of the structure is located in the first electrode layer, for example, in one or more intermediate spaces, in order to better anchor the structure. By means of the structure, which is applied in particular as an electrically insulating structure, it is possible to increase the anchoring surface for the first layer and the second layer in the detector of the first aspect (and, if necessary, further layers containing at least one corresponding perovskite) and for the first layer in the detector of the second aspect on the first electrode layer and, if necessary, therefore also on the substrate.

[0087] Thus, according to a particular embodiment, the structure is at least partially or completely located in an area defined by one or more intermediate spaces or a grid structure of the first electrode layer between individual electrode pixels, wherein the structure can also be located in one or more intermediate spaces or grid structures. It is not excluded that the structure is also partially located on and / or above the electrode pixels of the first electrode layer. The structure is located between the electrode pixels so that a 3D shape or a three-dimensional body is formed at least above one or more spaces of the first electrode layer in the direction of the second electrode.

[0088] In addition to structuring, the structure enables a production process in which different regions and filling heights or layer thicknesses of the layers introduced therein and thus the absorber material of the layers, ie the at least one perovskite, can be defined pixel by pixel.

[0089] According to a specific embodiment, the structure surrounds the first region and the second region above the corresponding electrode pixel and possibly the third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. region. The electrode pixel is thus adjacent to the edge of the detector, and the structure on this edge can also be replaced by a housing of the detector, etc., wherein the housing is not particularly restricted and is in particular non-conductive. However, according to a specific embodiment, each region above each electrode pixel is surrounded by the structure. A first layer comprising at least one first perovskite and a second layer comprising at least one second perovskite and, if necessary, further layers comprising corresponding further perovskites, as described above exemplarily for up to ten layers, are filled into the structure above the corresponding electrode pixel in the detector of the first aspect according to a specific embodiment, so that the layers are delimited by the corresponding electrode pixels and the structure, and the filling height of the corresponding layer preferably does not exceed the height of the structure. Accordingly, in the detector of the second aspect, a first layer comprising at least one first perovskite is filled in a structure above the corresponding first, second and possibly third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, etc. electrode pixels, so that the first layer is limited by the corresponding electrode pixels and the structure, and the filling height of the corresponding layer preferably does not exceed the height of the structure.

[0090] The shape of this body of the structure is not particularly limited. Figures 4 to 13 2 schematically shows exemplary shapes for structures in the form of two-dimensional cross-sectional views. It is also clear from these figures how the structures 1.5 are arranged at least partially between the electrode pixels 1.6. Figure 4 and Figure 5 For example, the following structure is shown, which gradually widens or narrows toward the second electrode (not shown, located above it). This shape can be obtained, for example, by using different photoresists (negative or positive photoresists) during production. Figures 6 to 8 The shapes shown in can also be obtained, for example, by using different photoresists and / or by other methods described below. Figure 8 The shapes shown in can be produced, for example, by means of lift-off resist (LOR).

[0091] In addition to different shapes, the dimensions of the structure 1.5 can also vary, such as in Figures 9 to 11 As can be seen in: One example is that the structure 1.5 fits exactly between the electrode pixels 1.6 ( Fig. 9 ); In another example, the structure 1.5 is wider than the spacing between the electrode pixels 1.6, that is, wider than the intermediate space ( Fig.10 ) is wider; alternatively, the structure 1.5 can also be narrower than the spacing between the electrode pixels 1.6, wherein in this case, the structure 1.5 can then also be introduced into one or more intermediate spaces (this is not excluded in other figures; Fig.11 ). In addition, it is also possible to additionally add some parts of the structure 1.5 above the active surface of the electrode pixel 1.6, such as Fig.12 and Fig.13 Thus, the adhesion of the first layer and the second layer in the detector of the first aspect or the first layer in the detector of the second aspect can be further enhanced, but detection can also be reduced by reducing the active surface of the electrode pixel 1.6 that can be used for detection.

[0092] In addition, different shapes of the structure can also be obtained in other ways, for example by selectively etching and / or laser ablation of the substrate, and subsequently introducing the electrode pixels into the etched and / or ablated areas of the substrate, wherein the material of the one or more intermediate spaces of the first electrode layer and the structure can correspond to the material of the substrate, and / or by 3D printing. In this case, it is feasible to use different polymers, ceramics, etc. as materials for the structure. Corresponding methods for selective etching are known, for example, from JD Zahn et al., "A direct plasma etch approach to high aspect ratio polymer micromachining with applications in biomems and CMOS-mems", Technical Digest, MEMS 2002 IEEE International Conference, the 15th IEEE International Conference on Microelectromechanical Systems, DOI: 10.1109 / MEMSYS.2002.984223. Exemplary methods for laser ablation are described, for example, in V.N. Tokarev et al., “High-aspect-ratio microdrilling of polymers with UV laser ablation: experiment with analytical model”, Appl. Phys. A, 2002, DOI: 10.1007 / s00339-002-1511-8. Methods for 3D printing are known, for example, from A. Kain et al., “High aspect ratio-and 3D-printing of freestanding sophisticated structures”, Procedie Chemistry 1, 2009, 750-753, DOI: 10.1016 / j.proche.2009.07.187.

[0093] The size of the structure is also not particularly limited. However, the following structure is preferred, which has a height of 0.5 μm to 5000 μm, preferably 0.8 to 4000 μm, further preferably 1 μm to 3000 μm, further preferably 10 μm to 2000 μm, for example 20 μm to 1800 μm or 30 μm to 1700 μm, in particular 50 μm to 1500 μm, from the surface of the pixelated first electrode layer. For the structure, even in the case of multiple electrode pixels, different heights (and / or widths if necessary) are feasible in the individual zones separating different areas above different electrode pixels, for example if in the detector of the second aspect, the electrode pixels are arranged at different heights and / or with different thicknesses so as to be able to achieve different filling heights of the first layer containing at least one first perovskite. Structures with a high aspect ratio (ratio of height to width) are also preferred, in particular if the structure extends as a "grid" and / or "wall" away from the surface of the pixelated first electrode layer (wherein the structure separates the first and second regions), wherein the width of the wall and / or the width of the lateral pillars of the grid can be, for example, 0.5 μm to 80 μm, preferably 1 μm to 50 μm, further preferably 2 μm to 35 μm, further preferably 3 μm to 25 μm, further preferably 4 μm to 15 μm, in particular 5 μm to 10 μm, wherein the width can, for example, be measured directly on the surface of the pixelated first electrode layer, in particular in the case of widening or narrowing structures or otherwise irregularly shaped structures. The aspect ratio can be related to the field of application (e.g. mammography (MAMMO), radiology (RAD), fluoroscopy (FLUORO), non-destructive testing (NDT)), the hardness of the electromagnetic radiation to be detected, and the absorption properties of the perovskite, which detects this radiation directly or indirectly (in the presence of a layer containing at least one scintillator).

[0094] It is also not excluded that the electrode pixels are filled into the structure during production, i.e., the electrode pixels are filled into the structure only after the structure is produced. In this case, higher aspect ratios can also be achieved if necessary. Therefore, the structure is also located in the intermediate space, and the electrode pixels are located almost in the structure, so that in the region of one or more intermediate spaces of the first electrode layer, the first electrode layer can also be formed by parts of the structure (the first electrode layer is then understood to be, for example, a layer with the same height as the height of the electrode pixels or the thinnest electrode pixel, which layer is theoretically removed from the detector, wherein the material of the structure is then located between the electrode pixels and thus fills one or more intermediate spaces between the electrode pixels). In this case, as is also usually the case in the first electrode layer, one or more intermediate spaces have in particular a height that corresponds to the height of the electrode pixels (also called pixel electrodes). The electrode pixels can have a filling factor of the structure (i.e., in the region of the structure that is not filled with the material of the structure, for example in a grid structure as a structure), which filling factor is, for example, up to 90%, but preferably <50%, preferably <10%, and more preferably <2%.

[0095] For example, electrode pixel sizes or pitches of 150 μm or more, structure widths of 50 μm or less, and / or structure heights of up to 1250 μm are feasible.

[0096] The material of the structure is likewise not particularly restricted, but is preferably electrically insulating in order to avoid short circuits between individual electrode pixels. The material of the structure can also be related to the manufacture of the structure itself. As described above, the material of the structure can also correspond to the material of the one or more intermediate spaces and, if necessary, also to the material of the substrate, but can also be different, for example in the case of a coating material or a coating resist as in 3D printing.

[0097] Thus, it is feasible to produce the structure, for example, by applying a resist, such as a photoresist, which can be structured appropriately by means of a mold and / or a mask and can also be applied multiple times if necessary. The resist, such as a photoresist, is not particularly restricted. By appropriately selecting a resist, such as a photoresist, it is also possible to influence the adhesion of the first and second layers, and in particular at least one first perovskite and at least one second perovskite, or the first layer, and in particular at least one first perovskite, to the structure in the detector of the first aspect. This also includes the wetting behavior of the material of the first layer and the second layer or of the first layer, and in particular at least one first perovskite and at least one second perovskite or at least one first perovskite, if they are at least partially liquefied for recrystallization in the method according to the invention. As mentioned above, the corresponding content also applies to other materials in other manufacturing methods.

[0098] The different photoresists are not particularly limited and can be, for example, positive and negative or other structurable materials. Examples of positive photoresists or photoresists are, for example, AZ10XT, AZ 12XT, AZ 40XT, AZ 4533, AZ 4562, AZ 9245, AZ 9260, AS IPS 6050, AZ P4110, AZP4260, AZ P4903 and PL 177 from Microchemicals, Inc., and examples of negative photoresists are, for example, AZ 125nXT, AZ 125nXT (115CPS), AZ 15nXT (450CPS), AZ nLof 2020, AZ nLof 2035, AZ nLof 2070 and AZ nLof 5510 from Microchemicals, Inc. Other examples of photoresists and methods for structuring them are mentioned in "Thick-layer resists for surface micromachining" by B. Loechel, J. Micromech. Microeng, 10, 2000, 108-115. SU-8 is mentioned as another example of photoresist, for example, in "SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography" by A. del Campo and C. Greiner, J. Microchem. Microeng. 17, 2007, R81-R95.

[0099] In the detector of the first aspect, the first layer comprising at least one first perovskite and the second layer comprising at least one second perovskite different from the first perovskite are also not particularly limited, or in the detector of the second aspect, the first layer comprising at least one first perovskite is also not particularly limited. The amount of the first perovskite in the first layer and the amount of the second perovskite in the second layer, or the amount of another perovskite different from the other perovskites in another layer in the detector of the first aspect is also not particularly limited. According to specific embodiments, the first layer comprises at least one first perovskite, the amount of the first perovskite is ≥30 wt.-%, ≥50 wt.-% or ≥70 wt.-%, based on the first layer, or the first layer is essentially composed of the first perovskite (for example, ≥90 wt.-%, ≥95 wt.-% or ≥99 wt.-%, based on the first layer); or the first layer even consists of at least one first perovskite, and the second layer comprises at least one second perovskite, the amount of the second perovskite is ≥30 wt.-%, ≥50 wt.-% or ≥70 wt.-%, based on the first layer, or the second layer is essentially composed of the second perovskite (for example, ≥90 wt.-%, ≥95 wt.-% or ≥99 wt.-%, based on the second layer); or the second layer even consists of at least one second perovskite, and so on.

[0100] In the detector of the first aspect, the filling height of the first and second layers and any other layers containing at least one corresponding perovskite is not particularly limited and can, for example, correspond to the height of the structure, i.e., for example, a height of 0.5 μm to 5000 μm, preferably 0.8 μm to 4000 μm, further preferably 1 μm to 3000 μm, further preferably 10 μm to 2000 μm, for example 20 μm to 1800 μm or 30 μm to 1700 μm, in particular 50 μm to 1500 μm, but can also be larger or smaller, however in the detector of the first aspect they are preferably the same or smaller so as to avoid contact between layers containing different perovskites. In the detector of the second aspect, the first layer comprising at least one first perovskite has different filling heights in different regions, i.e. in the first, second and any other regions, wherein the filling height in the (e.g., first) region can, for example, correspond to the height of the structure, i.e., for example, the height is 0.5 μm to 5000 μm, preferably 0.8 μm to 4000 μm, further preferably 1 μm to 3000 μm, further preferably 10 μm to 2000 μm, for example 20 μm to 1800 μm or 30 μm to 1700 μm, in particular 50 μm to 1500 μm, or can be smaller or larger, and in other regions (e.g., the second, third, fourth, etc. regions) it is lower than this height, for example 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90% or more lower.

[0101] In the first layer, at least one first perovskite is not particularly limited and can include one perovskite or multiple perovskites, such as 2, 3, 4, 5 or more perovskites. According to a specific embodiment, the first layer contains one perovskite. In the detector of the second aspect, in addition, in the second layer, at least one second perovskite is not particularly limited and can include one perovskite or multiple perovskites, such as 2, 3, 4, 5 or more perovskites, wherein at least one perovskite is different from the perovskite of the first layer. According to a specific embodiment, the second layer contains perovskite. If more layers containing other perovskites are provided in addition, the corresponding contents also apply.

[0102] The first perovskite, the second perovskite, etc. are not particularly limited. For example, organic-inorganic perovskites and pure inorganic perovskites can be used, and the perovskite has an ABX3 structure, and the ABX3 structure has one or more cations (A + ), one or more B + Cation and one or more halides X -, which are not particularly limited. According to a specific embodiment, examples of suitable perovskites as the first perovskite, the second perovskite, etc. in the detector of the first aspect or as the first perovskite in the detector of the second aspect are MAPbI3 (CH3NH3PbI3), MAPbBr3 (CH3NH3PbBr3), FAPbI3 (HC(NH2)2PbI3), MAPbICl2 (CH3NH3PbICl2), FAPbBr3 (HC(NH2)2PbBr3), EAPbI3 (CH3CH2NH3PbI3), PAPbI3 (CH3CH2CH2NH3Pb I3), BA2PbI4((CH3CH2CH2CH2NH3)2PbI4), PMA2PbI4((C6H5CH2NH3)2PbI4), PEA2PbI4((C6H5CH2CH2NH3)2PbI4), EAPbBr3(CH3CH2NH3PbBr3), PAPbBr3(CH3CH2CH2NH3PbBr3); their mixed halides; inorganic-organic perovskites having a mixture of A cations and halides X (X = Cl, I and / or Br), such as MAFAPbX3(MA=CH3NH3, FA=HC( NH2)2), MAGAPbX3 (GA=guanidine salt), BAPAPbX3 (BA=CH3CH2CH2CH2NH3, PA=CH3CH2CH2NH3); organic halogenated mixtures in which the halogens are partially substituted by other halogens (e.g., halides with formula I3-xClx or Br3-xClx, etc., such as MAPbI3-xClx or CH3NH3PbBr3-xClx); organic and / or organic-inorganic perovskites in which Pb is at least partially or even completely substituted by Sn, Cu, Ni, Bi, Co, Fe, Mn, Cr, Cd, Ge and / or Yb, and and / or mixtures thereof; inorganic perovskites and mixtures thereof, such as CsPbX3, wherein X=Cl, Br and / or I, and mixtures thereof, Cs3Bi2X9, wherein X=Cl, Br and / or I, and mixtures thereof, Cs3Sb2X, wherein X=Cl, Br and / or I, and mixtures thereof, Cs2AgBiX6, wherein X=Cl, Br and / or I, and mixtures thereof, Rb3Bi2X9, wherein X=Cl, Br and / or I, and mixtures thereof, Rb3Sb2X9, wherein X=Cl, Br and / or I, and mixtures thereof, CsSnI3; etc., and mixtures of the perovskites.

[0103] By means of the first layer (detectors of the first and second aspects), the second layer and optionally further layers (detectors of the first aspect), in combination with the described structure, it is also possible to achieve improved adhesion of further layers to the first electrode layer.

[0104] The introduction of the first layer and the second layer and possibly other layers into the structure in the detector of the first aspect or the first layer in the detector of the second aspect is not particularly limited, and the layers can be introduced such that they only partially fill the structure, the layers can be introduced such that they just fill the structure, i.e. are flush with the upper edge or the highest point of the structure, or the layers can be introduced such that they extend beyond the structure, i.e. fill the structure and furthermore partially or completely cover the structure, wherein the latter is not preferred, in particular for the detector of the first aspect. As described above, the form of introduction, i.e. filling in the case of incomplete filling, is related to the material of the structure.

[0105] Different examples of this different filling are given in Figures 19 to 22 . Here is shown an electrode pixel 3.4 with a structure 3.3 and a first layer 3.7b (or another different layer, which is not shown here and corresponds to the detector according to the first aspect), the first layer comprising, for example, a recrystallized first perovskite, as explained below. A variant is that the first layer 3.7b is filled into the structure 3.3 with a flat upper edge (a straight line plane below the height of the structure), as shown in Fig.19 In addition, the layers including the first layer 3.7b have a positive curvature ( Fig. 20 ), or have negative curvature, as in Fig.21 or a flat upper edge, a mixture of positive curvature and / or negative curvature, as shown in Fig. 22 This depends, for example, on the wetting behavior (hydrophobic, hydrophilic) of the structure and / or the first electrode layer, for example the electrode pixels. Other shapes are also conceivable.

[0106] According to a specific embodiment, at least one first perovskite in the first layer comprising at least one first perovskite is at least partially recrystallized, and in particular recrystallized. As a result, the first layer can be better connected to the structure. In the detector according to the first aspect, at least one second perovskite in the second layer comprising at least one second perovskite - and optionally other perovskites in other layers - is at least partially recrystallized, and in particular recrystallized. As a result, the second layer and, if necessary, other layers can be better connected to the structure.

[0107] The recrystallization is not particularly restricted here. In particular, the first recrystallized perovskite is different from the first perovskite that has not been recrystallized, the second recrystallized perovskite is different from the second perovskite that has not been recrystallized, etc., because the crystal structure changes during recrystallization. Accordingly, the corresponding first layer, second layer and, if necessary, further layers (also referred to herein as recrystallized layers) with at least partially or completely recrystallized perovskite can be easily distinguished from another layer with the same perovskite in which the perovskite has not been recrystallized, because these layers have different morphologies, which can be easily detected by means of an X-ray electron microscope (REM) or a transmission electron microscope (TEM) based on images. The X-ray diffraction (XRD) spectra of the layers also have differences.

[0108] Recrystallization can be carried out in different ways and methods, for example by melting with methylamine gas, in particular in the case of perovskites containing methylammonium ions, by pressure and / or temperature melting, wherein the method can be adapted to the perovskite used. For example, the first perovskite, the second perovskite, etc. contain alkylammonium ions, in particular with 1 to 4 C atoms, more preferably methylammonium ions, and the treatment for producing the first layer, the second layer, and optionally the further layers, is carried out with a gas containing methylamine, in particular with methylamine gas.

[0109] The treatment of perovskites containing methylammonium ions with the aid of methylamine (MA) gas has been published by Li et al. in 2017 (Li, C., S. Pang, H. Xu and G. Cui, Methylamine gas based synthesis and healing process toward upscaling of perovskite solar cells: Progress and perspective, Solar RRL, 1 (9), 1700076 (2017)). In their paper, they describe the liquefaction of a previously solid perovskite layer after the action of MA gas, and the subsequent recrystallization accompanied by a change in morphology once the MA gas is no longer contained in the atmosphere. Patent EP 3304611 B1 utilizes this phenomenon in order to prepare perovskites from precursors (including metal halides) applied to two different surfaces. In CN 10209088003 A, a process is described in which a single-crystalline perovskite powder is applied to a mesoporous layer, for example titanium oxide, and liquefied with the aid of MA gas. The perovskite enters the pores as a liquid intermediate phase and recrystallizes there.

[0110] In particular, treatment with MA gas is preferred, since the MA gas is technically easy to handle and only small amounts of MA gas are required (for example, in a case where the pressure of the MA gas is 10-6 mbar to 10 bar negative pressure chamber, for example in a chamber volume of 1 L (for example 0.25 g of MA gas at a pressure of 200 mbar), which saves costs.

[0111] The first, second and optionally further layers can also be applied and recrystallized multiple times layer by layer. The first, second and optionally further layers containing at least one first, second and optionally further liquefied and recrystallized perovskite can be used in particular as an adhesion promoter between the first electrode layer or optional further layers applied thereto, such as an electron conductor layer or a hole conductor layer, and optionally further layers containing at least one scintillator.

[0112] In the detector according to the first aspect, at least one first perovskite and at least one second perovskite and, if necessary, further perovskites are used. The combination of such perovskites, which are filled in different separate regions with corresponding layers, can be related to their absorption coefficient, which is related to the wavelength or energy of the incident electromagnetic radiation. Fig.23 Here, it is shown that the MA + Examples of different mass attenuation coefficients μ / ρ of different perovskites in relation to the photon energy E of X-ray radiation. Fig.24 In addition, it is shown that there is MA + The different absorption coefficients μ of the different perovskites as a function of the photon energy E of the X-ray radiation. The absorption edges are clearly visible in the two spectra. It is clear from the two spectra that different radiation can be detected differently by different perovskites, so that spectral resolution of the material to be examined is possible.

[0113] In the detector of the second aspect, spectral resolution can be achieved via different filling heights. The electrode pixels with the lowest filling height (also in the sense of sub-pixels) can only fully detect low-energy electromagnetic radiation. As the filling height increases, the absorption share of high-energy photons increases. The correlation of the signals of the electrode pixels can achieve spectral information.

[0114] According to a particular embodiment, the detector of the first aspect or the detector of the second aspect further comprises a layer comprising at least one scintillator, said layer being located at least between the structure and the second electrode. Thus, as described above, it is possible to indirectly detect radiation in the layer comprising perovskite. Thus, a plurality of layers comprising different scintillators is applied, whereby additional spectral resolution is also possible.

[0115] The layer comprising at least one scintillator is not particularly restricted here. According to a specific embodiment, the thickness of the layer (in the direction between the pixelated first electrode layer and the second electrode) is 5 μm to 5000 μm, preferably 10 μm to 3000 μm, further preferably 50 μm to 2000 μm, and further preferably 100 μm to 1500 μm. The third layer can be manufactured as a separate layer, for example as a separately manufactured scintillator layer, and can be independent and non-independent, that is, for example, during manufacturing, it is also in contact with the second electrode or an optional electron-conducting layer or a hole-conducting layer, for example, in contact with an ITO or FTO electrode, wherein the second electrode can also be located on a transparent surface layer, such as glass, for example.

[0116] According to a particular embodiment, the layer comprising at least one scintillator is in contact with the first layer and the second layer and optionally further layers (detector of the first aspect) or the first layer (detector of the second aspect) and / or the structure.

[0117] In an embodiment having a layer comprising at least one scintillator, the layer is used in particular as a detection layer for high-energy radiation, for example X-ray radiation and / or gamma radiation, and one or more layers comprising at least one perovskite are used for indirect detection by conversion of photons, which are generated in the layer comprising at least one scintillator.

[0118] The scintillator of the layer including at least one scintillator is not particularly limited. For example, CsI:Tl, thallium-doped cesium iodide, or terbium-doped gadolinium oxysulfide, barium fluoride (BaF2), bismuth germanate (BGO), beryllium fluoride (BeF3), quantum dots, scintillating perovskite nanocrystals, etc. are suitable for use as scintillators.

[0119] According to a specific embodiment, the detector of the first aspect or the detector of the second aspect further comprises an electron conduction layer and / or a hole conduction layer located between the first electrode layer and the second electrode. The detector can also comprise a plurality of electron conduction layers and / or hole conduction layers.

[0120] Here, the electron-conducting layer and / or hole-conducting layer is not particularly restricted, and in the detector according to the invention, only one electron-conducting layer, only one hole-conducting layer or an electron-and-hole-conducting layer can be present. The electron-conducting layer and / or the hole-conducting layer are here intermediate layers, which are also referred to as interlayers. Interlayers are correspondingly intermediate layers, which act as electron transport (or hole blocking (HBL)) layers, i.e. as electron-conducting layers, or as hole transport (or electron blocking (EBL)) layers, i.e. as hole-conducting layers.

[0121] The material used for such an electron conductive and / or hole conductive layer is not particularly limited, and it can be used for materials used in common electron conductive and / or hole conductive layers.

[0122] Exemplary electron-conducting layers (HBL) can, for example, comprise the following materials, for example having ≥30 wt.-%, ≥50 wt.-% or ≥70 wt.-%, based on the electron-conducting layer; the electron-conducting layer essentially consists of the materials (for example ≥90 wt.-%, ≥95 wt.-% or ≥99 wt.-%, based on the electron-conducting layer); or even consists of the materials (wherein the following list is non-exclusive and also includes mixtures and isomeric mixtures of the materials mentioned, for example binary, ternary, quaternary mixtures, etc.):

[0123] Fullerene derivatives, such as C60 PCBM ([6,6]-phenyl C61 butyric acid methyl ester), C70 PCBM ([6,6]-phenyl C71 butyric acid methyl ester), bis-C60 PCBM (bis-[6,6]-phenyl C61 butyric acid methyl ester), C60oQDM (o-quinodimethane C60 monoadduct), bis-C60-OQDM (o-quinodimethane C60 diadduct), ICMA (indene C60 monoadduct, ICBA (indene C60 diadduct), fullerol (C60(OH)44)); other acceptors including polymers and small molecules, such as indacen-basierte-based compounds Verbindungen), such as: 3,9-bis(2-methylene-(3-(1,1-dicyanomethylidene)-indanone))-5,5,11,11-tetra(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene)(ITIC), IT-M(ITIC-M; 3,9-bis(2-methylene-((3-(1,1-dicyanomethylidene)-6 / 7-methyl)-indanone))-5,5,11,11-tetra(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene), IT-DM(ITIC-DM; 3,9-bis(2-methylene-((3-(1,1-dicyanomethylene)-6,7-dimethyl)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indacen[1,2-b:5,6-b']dithiophene) and IDTBR((5Z,5'Z)-5,5'-((7 ,7'-(4,4,9,9-tetraoctyl-4,9-dihydro-s-indacen[1,2-b:5,6-b']dithiophene-2,7-diyl)bis(benzo[c][1,2,5]thiadiazole-7,4-diyl))bis(methylidene))bis(3-ethylthiazolidine-2,4-dione)); compounds based on perylene imide, such as TPB (tert-butylpyridine, C9H 13N), SdiPDI-Se (a perylene imide derivative modified by inserting a selenene unit into the bay position), NIDCS-HO ((2E,2'E)-3,3'-(2,5-bis(hexyloxy)-1,4-phenylene)bis(2-(5-(4-(N-(2-ethylhexyl)-1,8-naphthalimido)-thiophen-2-yl)acrylonitrile)); compounds based on diketopyrrolopyrroles, such as DPP6 (dipeptidyl aminopeptidase-like protein 6), 6,6'-(benzo[c][1,2,5]thiadione oxadiazole-4,7-diylbis([2,2'-bithiophene]-5',5-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophene-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione)(DTDfBT(DPP)2), 6,6',6",6"'-(9,9'-spirobis[fluorene]-2,2',7,7'-tetrayltetra(thiophene-5,2-diyl))tetra(2,5-bis(2-ethylhexyl)-3-(5 -phenylthiophene-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione)(SF(DPPB)4); PFN(poly[(9,9-bis(3'-(N,N-dimethylamino)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]), PFN-OX(poly[9,9-bis(60-(N,N-diethylamino)propyl)-fluorene-alt-9,9-bis-(3-ethyl(oxetane-3- ethoxy)-hexyl)-fluorene]), PFO (poly(9,9-di-n-octylfluorenyl-2,7-diyl)), PPDIDTT (poly([N,N'-bis(2-decyl-tetradecyl)-3,4,9,10-peryleneimide-1,7-diyl]-alt-(dithieno[3,2-b:2',3'-d]thiophene-2,6-diyl)}), TPBi (1,3,5-tri(N-phenylbenzimidazol-2-yl)benzene); metal oxides, such as TiO x SnO x wait.

[0124] Exemplary hole-conducting layers (EBL) can, for example, comprise the following materials, for example ≥30 wt.-%, ≥50 wt.-% or ≥70 wt.-%, based on the electron-conducting layer; consist essentially of these materials (for example ≥90 wt.-%, ≥95 wt.-% or ≥99 wt.-%, based on the electron-conducting layer); or even consist of these materials (wherein the following list is non-exclusive and also includes mixtures of the materials mentioned, for example binary, ternary, quaternary mixtures, etc.):

[0125] Poly(3-hexylthiophene-2,5-diyl) (P3HT),

[0126] Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV),

[0127] Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene](MDMO-PPV), CN-PPV, CN-MEH-PPV, other phthalocyanines,

[0128] poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,8-diyl]] (F8BT), polyfluorene (PF), poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b']dithiophene-2,6-diyl]] (PCPDTBT), squarylium cyanine (e.g., symmetrical squarylium cyanine, e.g., having a terminal end with an alcohol functional group) Terminated hydrazone or diazabis-squarylium, PTT) (polythieno[3,4-b]thiophene), poly(5,7-bis(4-decyl-2-thienyl)-thieno(3,4-b)dithiazol-thiophene-2,5) (PDDTT); polymers based on diketopyrrolopyrroles, such as poly{2,2'-[(2,5-bis(2-hexyldecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)dithiophene]-5, 5'-diyl-alt-thiophene-2,5-diyl} (PDPP3T), poly[[2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxapyrrolo[3,4c]pyrrole-1,4-diyl]-alt-[3',3"-dimethyl-2,2':5',2"-p-thiophene]-5,5"-diyl] (PMDPP3T), poly{2,2'-[(2,5-bis(2-hexyldecyl)-3,6-dioxopyrrolo[3,4c]pyrrole-1,4-diyl] ,5,6-tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)dithiophene]-5,5'-diyl-alt-thiophene-2,5-diyl} (PDPP5T), poly[2,6-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,4-b]dithiophene-alt-5-dibutyloctyl-3,6-bis(5-bromothien-2-yl)pyrrolo[3,4-c]pyrrole-1,4-dione] (PBDTT-DPP);

[0129] Dithienosilole-based polymers, such as poly[(4,4-bis(2-ethylhexyl)dithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5'-diyl] (PSBTBT),

[0130] 7,7'-(4,4-bis(2-ethylhexyl)-4H-silane[3,2-b:4,5-b']bithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole)(p-DTS(FBTTh2)2),

[0131] poly[2,7-(9,9-dioctyl-dibenzosilyl)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiFDTBT); benzodithiophene-based polymers, such as poly[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-3-fluoro-2-[[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl] (PTB7),

[0132] Poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thiophene-5',7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))]))(PBDB-T),

[0133] Poly{2,6'-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,4-b]dithiophene-alt-5-dibutyloctyl-3,6-bis(5-bromothiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4-dione (PBDTT-DPP), poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxy-2-6-diyl)] (PBDTT-FTTE),

[0134] Poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-CF),

[0135] Polybenzothiadiazole (thiophene)-stat-benzodithiophene (thiophene)-8 (PBTZT-stat-BDTT-8) and other polymers and copolymers and small molecules with absorption maxima between 320-800nm; polytriarylamines and their derivatives,

[0136] Poly[[2,5-bis(2-octyldodecyl)-2,3,5,6-tetrahydro-3,6-dioxapyrrolo[3,4-c]pyrrole-1,4-diyl]-alt2[[2,2'-(2,5-thiophene)bithieno[3,2-b]thiophene]-5,5'-diyl]] (DPP(P)), polyaniline (PANI),

[0137] Poly[[4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexyl)-thieno[3,4-b]thiophene)-2-6-diyl]] (PBDTTT-C),

[0138] Poly[N29-heptyl-decyl-2,7-carbazole-alt-3,6-bis(thiophen-5-yl)-2,5-dioctyl-2,5-dihydropyrrolo[3,4-]pyrrole-1,4-dione] (PCBTDPP),

[0139] Poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT),

[0140] Poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-(E)-1,2-di(2,2'-bithiophene-5-yl)ethylene] (PDPPDBTE),

[0141] Perfluoro(4-methyl-3,6-dioxaoctan-7-ene)sulfonyl fluoride (PFI),

[0142] Poly(4-styrene sulfonate) grafted-polyaniline (PSS-g-PANI),

[0143] Copolymer of 2'-butyloctyl-4,6-dibromo-3-fluorothieno[3,4-b]thiophene-2-carboxylate (TT-BO), 3',4'-dichlorobenzyl-4,6-dibromo-3-fluorothieno[3,4-b]thiophene-2-carboxylate (TT-DCB) and 2,6-bis(trimethyltin)-4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b′]dithiophene (BDT-EH) copolymers (PTB-DCB21); N2,N2,N2',N2',N7,N7,N7',N7'-octyl(4-methoxyphenyl)-9,9'-spirobis[9H-fluorene]-2,2',7,7'-tetramine (spiro-OMeTAD), poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (TFB),

[0144] N4,N4'-di(naphthalene-1-yl)-N4,N4'-bis(4-vinylphenyl)biphenyl-4,4'-diamine (VNPB), 1,4-bis(4-sulfobutyloxy)benzene and thiophene (PhNa-1T); metal oxides such as NiO x 、MoO x wait.

[0145] The electron-conducting layer and / or the hole-conducting layer can be arranged, for example, between the first electrode layer and the first and second layers and, if necessary, further layers, between the first and second layers and, if necessary, further layers and a layer containing at least one scintillator, between an optional layer containing at least one scintillator and a second electrode, and / or between the first and second layers and, if necessary, further layers and a second electrode, etc.

[0146] According to a specific embodiment, the detector of the first aspect or the detector of the second aspect also includes a substrate, on which there is a first electrode layer, wherein the substrate preferably has a first and a second transistor, wherein more preferably, the first transistor at least contacts a first electrode pixel of the first electrode layer, and the second transistor at least contacts a second electrode pixel.

[0147] The substrate is not particularly limited and can be, for example, a pixelated substrate. In particular, the substrate is used for contacting electrode pixels and / or for stabilizing the detector, but also simplifies its manufacture. The substrate can be a substrate that is usually present in a detector, in particular an X-ray detector and / or a gamma ray detector.

[0148] The transistor is also not particularly limited and can be, for example, a TFT. A plurality of transistors can also contact the electrode pixel.

[0149] According to certain embodiments, a surface layer, for example glass and / or an encapsulation, may also be present on the second electrode.

[0150] In addition, if the electromagnetic radiation comes from below the electrode pixel, or is located between one or more layers and the second electrode and / or is located on the second electrode opposite to one or more layers, it is conceivable, for example, to install a filter on each electrode pixel. According to a specific embodiment, the second electrode can also assume the function of a filter, for example in that the second electrode has different thicknesses above different electrode pixels. Conductive filters, for example metals such as Al, Au, Ag, Sn, Cr, Ti, Pt, Pb, Bi, Cu, Mo, Ta, Ga and / or their alloys are suitable as filters, and / or also non-conductive compounds such as ceramics, for example as powders: Al2O3, boron nitride, ZrO2, AlN, etc. The hardening of the spectrum for a certain pixel makes it easier to separate the spectrum. The filter is not particularly restricted here.

[0151] The detector according to the invention is in particular designed to be planar. According to a specific embodiment, planar means that the area per electrode pixel in contact with the first layer is greater than 60%, preferably >80%, further preferably >90%, for example greater than 95%, more than 99% or even 100% of the area of ​​the electrode pixel.

[0152] exist Figure 1 An exemplary detector according to the invention of the first aspect is schematically shown in , wherein an exemplary layer arrangement is shown there, for example an X-ray detector and / or a gamma-ray detector (according to the “active part” of the detector). Figure 1 An exemplary arrangement for 4 different perovskites in different layers can be seen in FIG.

[0153] The substrate 1.8 comprises a transistor 1.7, for example a thin film transistor (TFT) in an active matrix drive scheme. The transistor 1.7 contacts the electrode pixels 1.6, which form a structured first electrode layer. There is an intermediate space between the electrode pixels 1.6, above which a structure 1.5 is located, for example as a grid or a wall. In the structure 1.5 there is a first layer 1.1 comprising at least one recrystallized first perovskite, a second layer 1.2 comprising at least one recrystallized second perovskite, a third layer 1.3 comprising at least one recrystallized third perovskite, and a fourth layer 1.4 comprising at least one recrystallized fourth perovskite. As for example in Fig.23 and 24 As shown in FIG. , the perovskites in adjacent sub-pixels have different absorption properties.

[0154] In this case, the structure 1.5 applied above the electrode pixel 1.6 divides the perovskite into different regions. The different regions are read out by the transistor 1.7 and can therefore be processed separately.

[0155] The detector of the second aspect is Figure 2 and 3 , wherein in an active matrix driving scheme, the electrode pixels 4.4 are located above a substrate 4.5 having transistors 4.6, such as thin film transistors (TFTs). There is an intermediate space between the electrode pixels 4.4, and above the intermediate space there is a structure 4.3, here for example as a grid or a wall. In the structure 4.3 there is a first layer 4.1c, wherein the first layer is filled with different filling heights h1, h2, h3 above different electrode pixels 4.4. Therefore, while the absorber material remains unchanged, the filling heights h1-h3 of the sub-pixels vary. The sub-pixels with the lowest filling height h1 can only fully detect low-energy photons. As the filling height increases, the absorption share of high-energy photons increases. The correlation of the sub-pixel signals can realize spectral information. In Figure 2 In the embodiment, the upper edges of the first layer are located on different planes, which can cause wasteful contact between each sub-pixel and the second electrode. Figure 3 In another variant shown in FIG, the electrode pixels 4.4 are placed on different planes, so that the upper edge of the first layer 4.1c is located on one plane.

[0156] In both aspects of the detector according to the invention, spectral information is obtained from the correlation of electrode pixels (sub-pixels).Brightness values ​​can be obtained by means of a weighted combination of the sub-pixel signals.

[0157] As mentioned above, another not shown embodiment of the detector of the first aspect is: Figure 1 and Figure 2 or Figure 3 combination.

[0158] For the detector Figures 1 to 3 In addition to the layer construction shown by way of example in , one or more interlayers, ie electron- and / or hole-conducting layers having an electron- and / or hole-conducting (hole / electron-blocking) function, may also be present in the construction.

[0159] A third aspect of the invention relates to a method for producing a detector for electromagnetic radiation, in particular an X-ray detector and / or a gamma-ray detector, the method comprising:

[0160] - providing a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel;

[0161] - applying a structure at least partially to the intermediate space of the first electrode layer, wherein the structure is applied in such a way that the structure is arranged on the intermediate space facing away from the first electrode layer, wherein the structure separates a first region above the first electrode pixel from a second region above the second electrode pixel;

[0162] - introducing into the structure a first layer comprising at least one first perovskite and a second layer comprising at least one second perovskite different from the first perovskite, wherein the first layer comprising at least one first perovskite is at least partially introduced into the structure such that the first layer is located in a first region over first electrode pixels of the first electrode layer, and wherein the second layer comprising at least one second perovskite is at least partially introduced into the structure such that the second layer is located in the second region over second electrode pixels of the first electrode layer;

[0163] and

[0164] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite and / or to the second layer comprising at least one second perovskite; or

[0165] - providing a structure having at least one intermediate space;

[0166] - introducing a first electrode pixel and a second electrode pixel on different sides of the intermediate space of the structure, wherein the first electrode pixel and the second electrode pixel do not fill the structure, thereby forming a first electrode layer, wherein the structure separates a first area above the first electrode pixel and a second area above the second electrode pixel;

[0167] - introducing into the structure a first layer comprising at least one first perovskite and a second layer comprising at least one second perovskite different from the first perovskite, wherein the first layer comprising at least one first perovskite is at least partially introduced into the structure such that the first layer is located in a first region over first electrode pixels of the first electrode layer, and the second layer comprising at least one second perovskite is at least partially introduced into the structure such that the second layer is located in a second region over second electrode pixels of the first electrode layer; and

[0168] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite and / or to the second layer comprising at least one second perovskite.

[0169] According to specific embodiments, introducing the first layer comprising at least one first perovskite comprises at least partially recrystallizing the at least one first perovskite, and / or introducing the second layer comprising at least one second perovskite comprises at least partially recrystallizing the at least one second perovskite.

[0170] A fourth aspect of the invention relates to a method for producing a detector for electromagnetic radiation, in particular an X-ray detector and / or a gamma-ray detector, the method comprising:

[0171] - providing a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel;

[0172] - applying a structure at least partially to the intermediate space of the first electrode layer, wherein the structure is applied in such a way that the structure is arranged on the intermediate space facing away from the first electrode layer, wherein the structure separates a first region above the first electrode pixel from a second region above the second electrode pixel;

[0173] - introducing a first layer comprising at least one first perovskite at least partially into the structure such that the first layer is located in a first region over a first electrode pixel of the first electrode layer and in a second region over a second electrode pixel of the first electrode layer, wherein a first filling height of the first layer comprising at least one first perovskite in the first region over the first electrode pixel is different from a second filling height of the first layer in the second region over the second electrode pixel; and

[0174] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite; or

[0175] - providing a structure, wherein the structure has at least one intermediate space;

[0176] - introducing a first electrode pixel and a second electrode pixel on different sides of the intermediate space of the structure, wherein the first electrode pixel and the second electrode pixel do not fill the structure, thereby forming a first electrode layer, wherein the structure separates a first area above the first electrode pixel and a second area above the second electrode pixel;

[0177] - a first layer comprising at least one first perovskite is at least partially introduced into the structure such that the first layer is located in the first region over the first electrode pixel of the first electrode layer and in the second region over the second electrode pixel of the first electrode layer, wherein

[0178] a first filling height of the first layer comprising at least one first perovskite in the first region over the first electrode pixel is different from a second filling height of the first layer in the second region over the second electrode pixel; and

[0179] - applying a second electrode to the structure and / or to the first layer comprising at least one first perovskite.

[0180] According to certain embodiments, introducing the first layer comprising at least one first perovskite comprises at least partially recrystallizing the at least one first perovskite.

[0181] According to a particular embodiment, the steps of the method according to the invention are performed in the order presented.

[0182] With the aid of the method according to the invention, in particular, a detector according to the invention can be manufactured, i.e. a detector according to the first aspect can be manufactured with the aid of the method of the third aspect, and a detector according to the second aspect can be manufactured with the aid of the method of the fourth aspect. Accordingly, the description of the detector according to the invention according to a specific embodiment also relates to the corresponding method according to the invention, and vice versa. In particular, the different layers and materials used to manufacture the detector in the method according to the invention can be the same as those already described in conjunction with the detector according to the invention, and vice versa. The method according to the invention has the advantage that it can be easily scaled to large areas (e.g. 43×43 cm 2 )superior.

[0183] The method according to the third aspect and the fourth aspect of the present invention may firstly comprise the following steps:

[0184] I) providing a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel and an intermediate space between the first electrode pixel and the second electrode pixel;

[0185] - applying a structure at least partially to the intermediate space of the first electrode layer, wherein the structure is applied in such a way that the structure is arranged on the intermediate space facing away from the first electrode layer, wherein the structure separates a first region above the first electrode pixel from a second region above the second electrode pixel;

[0186] Or include the following steps:

[0187] II) - providing a structure, wherein the structure has at least one intermediate space;

[0188] -Introducing a first electrode pixel and a second electrode pixel onto different sides of the intermediate space of the structure, wherein the first electrode pixel and the second electrode pixel do not fill the structure, thereby forming a first electrode layer, wherein the structure separates a first area above the first electrode pixel and a second area above the second electrode pixel.

[0189] The method can differ, for example, in terms of the production of the structure. Variant I) is advantageous, for example, in methods in which the structure is subsequently applied, such as, for example, in the case of resists, in particular photoresists, or in 3D printing. Variant II) is suitable, however, in methods in which a part of a substrate or the like is removed in order to produce the structure, for example, in the case of etching or laser ablation, as described above.

[0190] For example, based on the substrate, the provision of the first electrode layer in variant I), which can be achieved as described above, and the provision of the structure in variant II), which can also be achieved as described above, are not particularly limited. The application of the structure in variant I) can be carried out, for example, by coating a resist, such as a photoresist, as described above, and if necessary, multiple times, and / or by 3D printing, etc. The introduction of electrode pixels in variant II can be carried out, for example, in the following manner: the material of the electrode pixels is introduced as described above into the areas on different sides of the intermediate space of the first electrode layer or in the case of more than two electrode pixels in the area between multiple "intermediate spaces" (the intermediate spaces are therefore defined as above in this embodiment), for example also on the contact part of the substrate, as well as liquefaction and re-solidification (for example melting and re-solidification), the introduction of solid electrode pixels, solidification from the gas phase, evaporation from the solution, etc., and is not particularly limited, and can also be carried out from a precursor of the electrode material, for example during precipitation. In the method of the fourth aspect, the electrode pixels can be applied to different steps in order to achieve Figure 3 structure.

[0191] In the method of the third aspect, the first layer and the second layer are then introduced, while in the method of the fourth aspect, the first layer is introduced with different filling heights. These steps are also not particularly limited. For example, the material for the first layer containing at least one first perovskite and the material for the second layer containing at least one second perovskite and, if necessary, the other material for the other layer containing at least one other perovskite (in the method of the third aspect) or the material for the first layer containing at least one first perovskite (in the method of the fourth aspect), for example, at least one corresponding perovskite material and / or its precursor is introduced as a powder into the structure and liquefied and solidified again there. The composition of the introduced material does not have to correspond to the final composition of the final first layer. When the precursor is introduced, after manufacturing at least one corresponding perovskite, it can also be liquefied and solidified again in order to recrystallize it. Here, at least one corresponding perovskite or corresponding layer can be well connected to the structure and fixed thereon because good wetting can be performed by the liquid phase. Liquefaction is not particularly limited here and can be carried out by the action of methylamine gas (MA gas), pressure and / or temperature as described above in conjunction with the detector. Solidification and thus recrystallization can then be effected again by discontinuing the MA gas and / or by further corresponding changes in temperature and / or pressure, wherein this can be adapted to the at least one corresponding perovskite.

[0192] exist Figures 14 to 18 The corresponding method for the method of the third aspect is schematically shown in FIG. Fig.14 As shown in FIG. 3 , there is a first electrode layer 3.4 including electrode pixels on a substrate 3.5 . A structure 3.3 is located above the intermediate space of the first electrode layer 3.4 .

[0193] The material for the first layer is introduced into the structure 3.3 as a first powder 3.1, for example as a perovskite powder or as a precursor material for a perovskite, as in this case, for example Fig.14 The introduction is carried out in a targeted manner above the electrode pixels by means of a mask 3.2, wherein, for example, the perovskite powder is dropped through a mask opening above the defined electrode pixels into a clearly defined area, wherein the mask 3.2 only allows one or more specific electrode pixels to be accessible. The perovskite material and / or precursor material can be filled into the targeted openings.

[0194] exist Fig.15In a further step shown in , after adjusting or shifting the mask 3.2 into another separate area above another electrode pixel, a second powder 3.6 for the second layer is introduced, for example as a perovskite powder or as a precursor material for a perovskite. In the method of the third aspect, the first and second powders differ at least in terms of the perovskite or precursor material. In the method according to the fourth aspect, instead of this, the first powder can again be filled with different filling heights.

[0195] As in Fig.16 As shown in FIG. 1 , a third powder 3 . 7 for the third layer, for example as a perovskite powder or as a precursor material for a perovskite, and a fourth powder 3 . 8 for the fourth layer, for example as a perovskite powder or as a precursor material for a perovskite, are subsequently introduced.

[0196] Later, in Fig.17 In the steps shown in , the powder is liquefied by the effects of MA gas, temperature T, etc., so that a liquid first layer 3.1b, a liquid second layer 3.6b, a liquid third layer 3.7b and a liquid fourth layer 3.8b are formed.

[0197] Then in Fig.18 In the steps shown in , the layers are recrystallized so that a recrystallized first layer 3.1c, a recrystallized second layer 3.6c, a recrystallized third layer 3.7c and a recrystallized fourth layer 3.8c can be formed. The layers then have good adhesion to the first electrode layer 3.4 and good electrical contact of the individual electrode pixels on their surface, which is, for example, greater than 60%, preferably >80%, further preferably >90%, for example greater than 95%, greater than 99% or even 100% of the area of ​​the electrode pixels, and when detecting electromagnetic radiation, in particular X-ray radiation and / or gamma radiation, spectral resolution can be achieved.

[0198] The process of filling the regions separated by the separating structure, the subsequent liquefaction and recrystallization can be repeated until the desired filling height and layer properties are reached. Different filling heights can also be produced.

[0199] After application of the first layer and possibly the second layer and / or further layers, the second electrode is applied, wherein this is likewise not subject to particular restrictions.

[0200] According to a particular embodiment, in the method according to the invention, a layer comprising at least one scintillator is introduced at least between the structure and the second electrode. The layer comprising at least one scintillator can be provided as described above.

[0201] According to a specific embodiment, in the method according to the invention, an electron-conducting layer and / or a hole-conducting layer is also introduced between the first electrode layer and the second electrode. The electron-conducting layer and / or the hole-conducting layer can be applied during the method at suitable locations, i.e. to the first electrode layer, the first layer and the second layer and possibly further layers or the first layer with different filling heights, the layer containing at least one scintillator, etc., as explained above in conjunction with the detector. The materials of the layers correspond to the materials already mentioned in conjunction with the detector.

[0202] According to a particular embodiment, in the method according to the invention, a first electrode layer is applied to the substrate. This is not particularly restricted and can be configured as described above in conjunction with the detector.

[0203] According to a specific embodiment, in the method according to the present invention, the substrate has a first and a second transistor, wherein preferably, the first electrode pixel is applied so that the first electrode pixel at least contacts the first transistor, and the second electrode pixel is applied so that the second electrode pixel at least contacts the second transistor.

[0204] Also disclosed is the use of a structure for separating layers of different thicknesses comprising at least one identical perovskite or layers comprising different perovskites for spectral resolution in the detection of electromagnetic radiation, in particular X-ray radiation and / or gamma radiation.

[0205] As long as it makes sense, the above-mentioned embodiments, designs and improvements can be combined with each other arbitrarily. Other feasible designs, improvements and embodiments of the present invention also include combinations of features of the present invention described above or below with respect to the embodiments that are not mentioned in detail. In particular, those skilled in the art also add individual aspects as improvements or supplements to the corresponding basic forms of the present invention.

[0206] The present invention is further explained in detail below with reference to different examples thereof. However, the present invention is not limited to these examples.

[0207] On the first electrode layer of the pixel having an electrode made of, for example, ITO or Pt, Figure 3 The electrode pixels are formed by SU-8 as a photoresist. Fig.25 In this example, a pixelated substrate which is not filled with perovskite is shown. MAPI (CH3NH3PbI3) is introduced as a perovskite in powder form at different filling heights into the structure, liquefied and recrystallized by means of MA gas. Fig.26 In FIG. 1 , a grid with filling can be seen, and the pixel electrode is filled. Multiple fillings are performed to achieve different filling heights. Fig. 27, different filling heights are shown as outlines of the grids, wherein an unfilled grid 11, a grid 12 after a first filling, and a grid 13 after a second filling are shown. In this drawing, the height profile of the auxiliary structure with a height of 35 μm is visible after filling in the 1st and 2nd coating steps. According to this example, after approximately 3-4 coating steps, a complete filling of the structure is achieved, wherein this is not performed for each electrode pixel. After the filling is completed, a second electrode made of Cr or Ti is applied to the MAPI.

[0208] exist Figures 28 to 30 The effect of MA gas on recrystallization can be seen from the SEM photos in. Before treatment, Fig.28 As shown in FIG, a uniform structure is shown, which mainly has primary grains of about 5 μm in size and agglomerates thereof, the size of which is 10 μm-30 μm. After surface treatment, as in Fig.29 As shown in , a "compact" surface is obtained, so that chemical reactions are slowly visible, but morphological changes can still be observed in the center, especially by comparing Fig.28 The MA gas thus breaks up the grain agglomerates, and more small grains (also called primary grains) are visible. Fig.30 If the MA gas “evaporates” again from the material after a certain time, as shown in , small “exit pockets” are produced at the edges of the perovskite. In addition, the μporosity also increases.

[0209] With the help of current detectors and methods, different layer thicknesses and / or material combinations are possible, thereby covering a wide spectrum of photon energies / wavelengths for detection. The critical thickness of the layer can be easily achieved by layer-by-layer construction. In addition, the separation structure can be easily produced by means of, for example, photolithography and can be variable in height (depending on the application). In particular, a simple structurability of different perovskite materials is obtained, or different thicknesses of the detection layer on the sub-pixel (electrode pixel), especially without a photolithography process, and a simple process for changing the filling height in the sub-pixel can be obtained, or a combination of different absorption materials, which can be simply and quickly applied side by side due to the mask. The use of filters is not necessary, but is feasible on different electrode pixels or can be applied to different electrode pixels (sub-pixels) when necessary. By the preferred liquefaction and recrystallization method, there is a good contact with the electrode pixel, and a layer-by-layer process is feasible, so that the layer thickness can be adjusted.

Claims

1. A detector for electromagnetic radiation, the detector comprising: a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel, and an intermediate space existing between the at least one first electrode pixel and the second electrode pixel; a second electrode; a first layer, the first layer comprising at least one first perovskite, the first layer being located between the at least one first electrode pixel of the first electrode layer and the second electrode; a second layer, the second layer comprising at least one second perovskite different from the at least one first perovskite, the second layer being located between the second electrode pixel of the first electrode layer and the second electrode; and A structure, wherein the structure is at least partially located between the first electrode layer and the second electrode and is arranged between the at least one first electrode pixel and the second electrode pixel of the first electrode layer, so as to be arranged in an intermediate space between the at least one first electrode pixel and the second electrode pixel in a direction at least partially away from the first electrode layer toward the second electrode, wherein the first layer comprising the at least one first perovskite is at least partially introduced into the structure in a first region so as to be located above the at least one first electrode pixel of the first electrode layer, wherein the second layer comprising the at least one second perovskite is at least partially introduced into the structure in a second region so as to be located above the second electrode pixel of the first electrode layer, and The structure separates the first region and the second region.

2. The detector for electromagnetic radiation according to claim 1, wherein at least one of the at least one first perovskite in the first layer comprising at least one first perovskite and the at least one second perovskite in the second layer is at least partially recrystallized.

3. The detector for electromagnetic radiation according to claim 1, further comprising: A layer comprising at least one scintillator is located at least between the structure and the second electrode.

4. The detector for electromagnetic radiation according to claim 1, further comprising: At least one of an electron conducting layer and a hole conducting layer is located between the first electrode layer and the second electrode.

5. The detector for electromagnetic radiation according to claim 1, further comprising: A substrate on which the first electrode layer exists.

6. A detector for electromagnetic radiation according to claim 5, The substrate has a first transistor and a second transistor, and the first transistor at least contacts the at least one first electrode pixel, and the second transistor at least contacts the second electrode pixel of the first electrode layer.

7. The detector for electromagnetic radiation according to claim 1, The detector is at least one of an X-ray detector and a gamma-ray detector.

8. A detector for electromagnetic radiation, the detector comprising: a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel, and an intermediate space existing between the at least one first electrode pixel and the second electrode pixel; a second electrode; a first layer, the first layer comprising at least one first perovskite, the first layer being located between the at least one first electrode pixel of the first electrode layer and the second electrode, and between the second electrode pixel of the first electrode layer and the second electrode; and a structure, the structure being at least partially located between the first electrode layer and the second electrode and being arranged between the at least one first electrode pixel and the second electrode pixel of the first electrode layer, so as to be at least partially arranged in an intermediate space between the at least one first electrode pixel and the second electrode pixel in a direction toward the second electrode away from the first electrode layer, wherein the first layer comprising at least one first perovskite is at least partially introduced into the structure so as to be located in a first region over the at least one first electrode pixel of the first electrode layer and in a second region over the second electrode pixel of the first electrode layer, wherein a first filling height of the first layer comprising the at least one first perovskite in the first region over the at least one first electrode pixel is different from a second filling height of the first layer in the second region over the second electrode pixel, and The structure separates the first region and the second region.

9. A detector for electromagnetic radiation according to claim 8, wherein the at least one first perovskite in the first layer comprising the at least one first perovskite is at least partially recrystallized.

10. The detector for electromagnetic radiation according to claim 8, The detector is at least one of an X-ray detector and a gamma-ray detector.

11. The detector for electromagnetic radiation according to claim 8, further comprising: A layer comprising at least one scintillator is located at least between the structure and the second electrode.

12. The detector for electromagnetic radiation according to claim 8, further comprising: At least one of an electron conducting layer and a hole conducting layer is located between the first electrode layer and the second electrode.

13. A method for manufacturing a detector for electromagnetic radiation, the method comprising: Providing a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel, and an intermediate space existing between the at least one first electrode pixel and the second electrode pixel; applying a structure at least partially to the intermediate space of the first electrode layer, the structure being applied such that the structure is arranged on the intermediate space facing away from the first electrode layer and the structure separates a first region above the at least one first electrode pixel from a second region above the second electrode pixel; introducing into the structure a first layer comprising at least one first perovskite and a second layer comprising at least one second perovskite different from the first perovskite, the first layer comprising the at least one first perovskite being at least partially introduced into the structure so as to be located in the first region over the at least one first electrode pixel of the first electrode layer, and the second layer comprising the at least one second perovskite being at least partially introduced into the structure so as to be located in the second region over the second electrode pixel of the first electrode layer; and applying a second electrode to at least one of the structure, the first layer comprising the at least one first perovskite, and the second layer comprising the at least one second perovskite; or providing a structure having at least one intermediate space; introducing a first electrode pixel and a second electrode pixel on different sides of the intermediate space of the structure, wherein the first electrode pixel and the second electrode pixel do not fill the structure, thereby forming a first electrode layer, wherein the structure separates a first area above the first electrode pixel and a second area above the second electrode pixel; introducing into the structure a first layer comprising at least one first perovskite and a second layer comprising at least one second perovskite different from the first perovskite, the first layer comprising at least one first perovskite being at least partially introduced into the structure so as to be located in a first region over the at least one first electrode pixel of the first electrode layer, and the second layer comprising at least one second perovskite being at least partially introduced into the structure so as to be located in a second region over the second electrode pixel of the first electrode layer; and A second electrode is applied to at least one of the structure, the first layer comprising the at least one first perovskite and / or the second layer comprising the at least one second perovskite.

14. The method according to claim 13, wherein at least one of the following steps Introducing the first layer comprising at least one first perovskite comprises at least partially recrystallizing the at least one first perovskite, and Introducing the second layer comprising the at least one second perovskite comprises at least partially recrystallizing the at least one second perovskite.

15. The method according to claim 13, Therein, a layer comprising at least one scintillator is introduced at least between the structure and the second electrode.

16. The method according to claim 13, In this case, at least one of an electron-conducting layer and a hole-conducting layer is introduced between the first electrode layer and the second electrode.

17. The method according to claim 13, Therein, the first electrode layer is applied to a substrate.

18. The method according to claim 17, The substrate has a first transistor and a second transistor, and the first electrode pixel is applied so that the first electrode pixel at least contacts the first transistor, and the second electrode pixel is applied so that the second electrode pixel at least contacts the second transistor.

19. A method for manufacturing a detector for electromagnetic radiation, the method comprising: Providing a first electrode layer, the first electrode layer comprising at least one first electrode pixel and a second electrode pixel, and an intermediate space existing between the at least one first electrode pixel and the second electrode pixel; applying a structure at least partially to the intermediate space of the first electrode layer, the structure being applied such that the structure is arranged in the intermediate space facing away from the first electrode layer and the structure separates a first region above the at least one first electrode pixel from a second region above the second electrode pixel; introducing a first layer comprising the at least one first perovskite at least partially into the structure such that a first filling height of the first layer comprising the at least one first perovskite in the first region over the at least one first electrode pixel of the first electrode layer and in the second region over the second electrode pixel of the first electrode layer is different from a second filling height of the first layer in the second region over the at least one first electrode pixel; and applying a second electrode to at least one of the structure and the first layer comprising the at least one first perovskite; or providing a structure having at least one intermediate space; introducing a first electrode pixel and a second electrode pixel on different sides of the intermediate space of the structure, wherein the first electrode pixel and the second electrode pixel do not fill the structure, thereby forming a first electrode layer, the structure separating a first area above the first electrode pixel and a second area above the second electrode pixel; introducing a first layer comprising at least one first perovskite at least partially into the structure so that a first filling height of the first layer comprising the at least one first perovskite in the first region over the at least one first electrode pixel of the first electrode layer and in the second region over the second electrode pixel of the first electrode layer is different from a second filling height of the first layer in the second region over the second electrode pixel; and A second electrode is applied to at least one of the structure and the first layer comprising at least one first perovskite.

20. The method according to claim 19, Wherein introducing the first layer comprising the at least one first perovskite comprises at least partially recrystallizing the at least one first perovskite.

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