Measurement method and measurement system

Abstract

Provided is a measurement method and a measurement system that can remove noise in a semiconductor manufacturing apparatus and accurately predict physical characteristics in the semiconductor manufacturing apparatus. The measurement method is performed by a semiconductor manufacturing apparatus having a chamber, and the measurement method includes: a step of obtaining first measurement data having a resonance frequency in the chamber based on an electrical signal transmitted into the chamber in a state where a jig capable of wireless communication is not arranged in the chamber, and using the first measurement data as reference data; a step of obtaining second measurement data having a resonance frequency in the chamber and a resonance frequency detected by a sensor mounted on the jig based on an electrical signal transmitted into the chamber in a state where the jig is arranged in the chamber; and a step of subtracting the reference data from the obtained second measurement data to remove noise.

Description

Technical Field

[0001] The present disclosure relates to a measurement method and a measurement system. Background Art

[0002] For example, Patent Document 1 proposes a method and a system for measuring background noise of a device.

[0003] For example, Patent Document 2 proposes a method and a sensing system for sensing characteristics inside a semiconductor manufacturing apparatus using a plurality of sensors. The sensing system includes a plurality of sensors, a reader, and a reader antenna, and predicts physical characteristics based on detection results of the plurality of sensors for signals output from the reader antenna via the reader.

[0004] <Prior Art Documents>

[0005] <Patent Documents>

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2013-527641

[0007] Patent Document 2: US Patent Application Publication No. 2019 / 0057887 Summary of the Invention

[0008] <Problems to be Solved by the Invention>

[0009] The present disclosure provides a technology capable of removing noise inside a semiconductor manufacturing apparatus and accurately predicting physical characteristics inside the semiconductor manufacturing apparatus.

[0010] <Means for Solving the Problems>

[0011] According to an embodiment of the present disclosure, there is provided a measurement method performed by a semiconductor manufacturing apparatus having a chamber, the measurement method including: a step of obtaining first measurement data having a resonance frequency inside the chamber based on an electric signal transmitted into the chamber in a state where a jig capable of wireless communication is not arranged in the chamber, and using the first measurement data as reference data; a step of obtaining second measurement data having a resonance frequency inside the chamber and a resonance frequency detected by a sensor mounted on the jig based on an electric signal transmitted into the chamber in a state where the jig is arranged in the chamber; and a step of subtracting the reference data from the obtained second measurement data to remove noise.

[0012] <Effects of the Invention>

[0013] According to one aspect, it is possible to remove noise inside a semiconductor manufacturing apparatus and accurately predict physical characteristics inside the semiconductor manufacturing apparatus. Brief Description of the Drawings

[0014] Figure 1 It is a diagram showing an example of a SAW sensor according to an embodiment.

[0015] Figure 2 It is a diagram showing an example of a measurement system according to an embodiment.

[0016] Figure 3 It is a diagram showing an outline of a measurement method according to an embodiment.

[0017] Figure 4 It is a flowchart showing an example of a measurement method (resonant noise measurement) according to an embodiment.

[0018] Figure 5 It is a diagram showing an example of resonant noise generated in a chamber according to an embodiment.

[0019] Figure 6 It is a flowchart showing an example of a measurement method (temperature measurement) according to an embodiment.

[0020] Figure 7 It is a diagram for explaining the temperature measurement principle according to an embodiment.

[0021] Figure 8 It is a flowchart showing an example of a measurement method (resonant noise measurement) according to an example.

[0022] Figure 9 It is a flowchart showing an example of a measurement method (temperature measurement) according to an example.

[0023] Figure 10 It is a diagram showing an example of the effect of resonant noise removal according to an example.

[0024] Figure 11 It is a diagram showing an example of the effect after resonant noise removal according to an example.

[0025] Figure 12 It is a flowchart showing an example of a measurement method (temperature measurement) according to a modification. Detailed Embodiments

[0026] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same components, and repeated descriptions may be omitted.

[0027] [Fixture]

[0028] First, refer to Figure 1, the jig LW used in the measurement system according to the embodiment will be described. Hereinafter, as an example of the jig LW according to the embodiment, a SAW (Surface Acoustic Wave) sensor will be described. As one embodiment, the jig LW of the SAW sensor functions as a temperature sensor for detecting temperature. However, the jig LW according to the embodiment is not limited to the case of detecting temperature, and it can detect the physical properties in the chamber of the semiconductor manufacturing apparatus.

[0029] The jig LW of the SAW sensor uses, for example, a wafer-shaped silicon substrate 43 as a base, and a plurality of SAW sensors 40a to 40i are mounted thereon. The plurality of SAW sensors 40a to 40i are arranged at substantially the same intervals. Hereinafter, the SAW sensors 40a to 40i are also collectively referred to as the SAW sensor 40. The SAW sensor 40 has a communication function capable of wireless communication with a waveguide-type reader antenna RA.

[0030] In Figure 1 , SAW sensor 40a and SAW sensor 40b are shown enlarged. The SAW sensor 40a is composed of a SAW device 41 and a tag antenna 44. The SAW device 41 has, for example, comb-shaped electrodes 41a on a piezoelectric substrate. The electrode 41a has electrodes 41a1 and 41a2 made of a metal thin film, and the convex portions of each other are inserted into the concave portions of each other from opposite directions to form a comb shape. On the tag antenna 44, electrode components 42 electrically connected to the electrodes 41a1 and 41a2 are arranged.

[0031] A voltage is applied between the electrode 41a1 and the electrode 41a2 from the electrode component 42. And when an electrical signal transmitted from the reader antenna RA is input, by the piezoelectric effect of the piezoelectric substrate of the SAW device 41 formed with the electrode 41a, the crystal particles (atoms) constituting the SAW device 41 are stressed with respect to each other, and approach or move away from each other due to the piezoelectric effect. As a result, the surface of the SAW sensor 40 vibrates in a wave-like manner.

[0032] For each SAW sensor 40, the distance between the electrode 41a1 and the electrode 41a2 is different. In other words, the structures of the SAW device 41 and the tag antenna 44 of the SAW sensor 40a and the SAW sensor 40b are the same, and only differ in the distance between the electrode 41a1 and the electrode 41a2. With such a structure, among the electrical signals input to the electrode 41a, the electrical signals of the inherent frequencies of the respective SAW sensors 40 corresponding to the distance between the electrode 41a1 and the electrode 41a2 are strengthened by resonance and propagated to the outside.

[0033] The reader antenna RA transmits an electrical signal in a predetermined frequency band and receives an electrical signal at a desired frequency selectively extracted from the SAW sensors 40a to 40i for the transmitted electrical signal. The measurement system according to the embodiment predicts the temperature based on the change in the frequency of the electrical signals respectively output by the SAW sensors 40a to 40i. In addition, since the resonance frequencies assigned to each of the SAW sensors 40a to 40i are different, based on the resonance frequencies included in the electrical signals output by the SAW sensors 40a to 40i, it is possible to determine which position among the SAW sensors 40a to 40i the predicted temperature corresponds to. Thus, it is possible to predict the temperature at each position of the SAW sensors 40a to 40i using the jig LW of the SAW sensors.

[0034] [Measurement system]

[0035] Refer to Figure 2 , and the structure of the measurement system 10 according to the embodiment will be described. Figure 2 FIG. is a diagram showing an example of the measurement system 10 according to the embodiment. The measurement system 10 includes a semiconductor manufacturing apparatus 100, a reader antenna RA, a reader R, a PC 30, and a jig LW.

[0036] The semiconductor manufacturing apparatus 100 is an apparatus for performing a desired process on a substrate exemplified by a wafer. The semiconductor manufacturing apparatus 100 has a chamber 1, and some examples of a plasma generation system are given, which is used to excite plasma from a process gas in the chamber 1. Figure 2 FIG. shows a capacitively coupled plasma (CCP) apparatus, in which plasma 2 is formed between an upper electrode 3 and a stage ST. The stage ST also functions as a lower electrode. The stage ST has a base 4 and an electrostatic chuck 5. During the process, the wafer is held on the stage ST. RF sources 6 and 7 are coupled to both the upper electrode 3 and the stage ST, and different RF frequencies can be used. In another example, the RF sources 6 and 7 can be coupled to the same electrode. In addition, a direct current (DC) power can be coupled to the upper electrode 3. A gas source 8 is connected to the chamber 1 to supply the process gas. In addition, an exhaust device 9 is connected to the chamber 1 to exhaust the inside of the chamber 1. The semiconductor manufacturing apparatus 100 includes a control unit 80 having a processor and a memory, and controls each element of the semiconductor manufacturing apparatus 100 to perform plasma processing on the wafer.

[0037] The reader antenna RA is mounted on a dielectric window such as quartz provided on the side wall of the chamber 1. The PC 30 is connected to the reader antenna RA via the reader R. The PC 30 is a computer that calculates the temperature detected by the SAW device 41 based on the signals output from the SAW sensors 40a to 40i at the time of measurement and received by the reader antenna RA. The PC 30 is an example of an information processing device, and the information processing device is not limited to the PC 30 and may also be an electronic device such as a tablet terminal, a mobile terminal, or a wearable device.

[0038] The jig LW has substantially the same dimensions as the wafer and is configured to be transported by a transport device. In addition, the jig LW does not require a battery and a power supply and is configured to be able to perform wireless communication with the reader antenna RA mounted on the side wall of the chamber 1. By using the transport arm of the transport device, the vacuum inside the chamber 1 can be maintained while transporting the jig LW having this function into the chamber 1. Thereby, the downtime of the semiconductor manufacturing apparatus 100 can be reduced. The jig LW is placed on the stage ST and is used for temperature measurement.

[0039] When using the jig LW to measure temperature, due to the influence of the structure of the chamber 1 and the components inside the chamber 1 on the electrical signal transmitted from the reader antenna RA into the chamber 1, unexpected resonance waves (waves with a resonance frequency that resonates inside the chamber 1) are generated. Hereinafter, this resonance wave is also referred to as "resonance noise". If the jig LW of the SAW sensor is used in a state where resonance noise is mixed, it is difficult to perform temperature measurement with the accuracy required by the user due to the resonance noise. In addition, the resonance noise varies with Figure 2 the gap G between the upper electrode 3 and the base 4 shown. In addition, the resonance noise sometimes changes with the structure and assembly accuracy of the components arranged inside the chamber 1 and the usage state of the chamber 1.

[0040] In the field of the semiconductor manufacturing apparatus 100, the allowable range of the error included in the temperature measurement is approximately about 0.1°C to 0.2°C. Therefore, in the semiconductor manufacturing apparatus 100, the resonance noise sometimes causes an error that cannot be tolerated with respect to the measured temperature.

[0041] Therefore, in the measurement method performed by the measurement system 10 according to the embodiment described below, the influence of the resonance noise is eliminated, and the temperature measurement is performed with the accuracy required by the semiconductor manufacturing apparatus 100. Thereby, the physical characteristics inside the semiconductor manufacturing apparatus 100 such as the temperature of the stage ST can be accurately predicted.

[0042] [Measurement Method]

[0043] Hereinafter, refer to Figures 3 - 6 to describe the measurement method according to the embodiment.Figure 3 This is a diagram showing an outline of a measurement method according to an embodiment. Figure 4 This is a flowchart showing an example of measurement of resonance noise performed by PC30 in the measurement method according to an embodiment. Figure 5 This is a diagram showing an example of resonance noise generated in a chamber according to an embodiment. Figure 6 This is a flowchart showing an example of temperature measurement performed by a PC in the measurement method according to an embodiment.

[0044] The measurement method according to an embodiment is performed, for example, Figure 2 in a state where no fixture LW is arranged on the mounting table ST in the chamber 1 showing an example and in a state where the fixture LW is arranged. It should be noted that the reader antenna RA outputs an electric signal in a predetermined frequency band.

[0045] (First step)

[0046] In the first step of the measurement method according to an embodiment, as Figure 3 (a) shows, in a state where the fixture LW is not arranged in the chamber 1, an electric signal is transmitted from the reader antenna RA into the chamber 1. By the input of the transmitted electric signal, resonance is generated in the chamber 1 at a specific frequency according to the structure of the chamber 1 and the arrangement of the components in the chamber 1. The reflected signal including this resonance is received by the reader antenna RA.

[0047] In Figure 4 step S21, PC30 acquires the received signal received by the reader antenna RA in a state where the fixture LW is not arranged in the chamber 1. In this way, PC30 obtains first measurement data having a specific resonance frequency that resonates in the chamber 1 from the received signal. The first measurement data shows resonance noise. In Figure 4 step S22, PC30 stores the first measurement data as reference data in the memory in PC30.

[0048] An example of the first measurement data is as Figure 5 shown. Figure 5 This is a diagram showing an example of resonance noise in the chamber 1 according to an embodiment. Figure 5 In the chart, the horizontal axis is the frequency and the vertical axis is the signal intensity. Figure 5 This is the waveform of the received signal received by the reader antenna RA, and the peak in the waveform is determined as the resonance frequency. Figure 5 (a) is an example of the signal intensity of each frequency included in the resonance noise when the gap G is 35 mm. Figure 5 (b) is an example of the signal intensity of each frequency included in the resonance noise when the gap G is 40 mm. Figure 5(c) is an example of the signal intensity of each frequency included in the resonance noise when the gap G is 85 mm.

[0049] As described above, the frequency and signal intensity included in the resonance noise change with the gap G between the upper electrode 3 and the base 4. In addition, the resonance noise sometimes changes with the structure and assembly accuracy of the components arranged in the chamber 1, and the usage state of the chamber 1.

[0050] (Second step)

[0051] In the second step of the measurement method according to the embodiment, as Figure 3 (b) shows, in a state where the jig LW is arranged in the chamber 1, an electric signal is transmitted from the reader antenna RA into the chamber 1. The electric signal received by the reader antenna RA among the transmitted electric signals, which is reflected in the chamber 1 and the electric signal having an inherent resonance frequency detected by the SAW device 41 of a plurality of SAW sensors 40 mounted on the jig LW (only one is shown in Figure 3 (b)).

[0052] In Figure 6 step S31, the PC 30 acquires the received signal received by the reader antenna RA in a state where the jig LW is arranged in the chamber 1. In this way, the PC 30 acquires second measurement data having a specific resonance frequency resonating in the chamber 1 and an inherent resonance frequency detected by the SAW device 41 from the received signal.

[0053] (Third step)

[0054] Next, in the third step of the measurement method according to the embodiment, the PC 30 Figure 6 in step S32 subtracts the reference data from the acquired second measurement data to remove the resonance noise. Then, in step S33, the PC 30 measures the temperature at each position of the plurality of SAW devices 41 based on the second measurement data after subtracting the reference data.

[0055] Thus, the temperature is measured based on the second measurement data after eliminating the resonance noise generated by the structure of the chamber 1 and the components arranged in the chamber 1. Thereby, the influence of the resonance caused by the signal reflected on the wall surface in the chamber 1 can be eliminated, and the accuracy of the temperature measured using the jig LW can be improved.

[0056] In particular, in processes such as etching performed by the semiconductor manufacturing apparatus 100, control of the temperature distribution on the wafer during the process is very important from the viewpoints of production stability and the like. For example, for a temperature sensor for etching, since measurement of negative temperatures has been required in recent years, in a wafer-type temperature sensor equipped with a battery, even if it has a wireless communication function, it cannot cope with the measurement of negative temperatures. In contrast, it is very advantageous to perform temperature measurement using a jig according to an embodiment that is not equipped with a battery and can also cope with the measurement of negative temperatures.

[0057] It should be noted that the first measurement data obtained in the first step can be measured for each semiconductor manufacturing apparatus 100, and reference data can be created for each semiconductor manufacturing apparatus 100. Reference data that can be commonly used for semiconductor manufacturing apparatuses 100 having the same gap G and the same structure can be created.

[0058] The execution time of the first step can be when the semiconductor manufacturing apparatus 100 is started up, after parts replacement in the chamber 1, or after maintenance. The execution time of the second step can be between batches, at regular intervals (such as once a day), or after maintenance.

[0059] The PC 30 predicts the temperature based on the resonance frequencies detected by the respective SAW devices 41. Figure 7 This is a diagram for explaining the temperature measurement principle according to the embodiment. For example, the SAW devices 41 respectively mounted on the SAW sensor 40a and the SAW sensor 40b are distinctively represented as SAW device 41(1) and SAW device 41(2). The resonance frequency detected by the SAW device 41(1) is different from the resonance frequency detected by the SAW device 41(2). For example, when the electrodes 41a of the SAW device 41(1) resonate at frequencies X1 and X3, the PC 30 measures the temperature based on the width A between the peaks after removing the resonance noise. When the electrodes 41a of the SAW device 41(1) resonate at frequencies X2 and X4, the PC 30 measures the temperature based on the width B (A < B) between the peaks after removing the resonance noise. The temperature is calculated based on the widths C and D in the same manner for the SAW device 41(2).

[0060] As described above, the multiple SAW devices 41 mounted on the jig LW resonate at different frequencies. Therefore, in the process of predicting the temperature, the PC 30 obtains second measurement data having the resonance frequencies detected by the respective SAW devices 41, and predicts the temperature based on each of the second measurement data after subtracting the reference data from each of the second measurement data. The SAW device 41 can be determined based on the resonance frequency included in the second measurement data. Thereby, it is possible to determine at which position of the stage ST the predicted temperature is based on the position of the SAW device 41.

[0061] (Example 1)

[0062] Refer to Figure 8 and Figure 9 The embodiments of the measurement method according to the above-described embodiment will be described. Figure 8 is a flowchart showing an example of the measurement method (resonant noise measurement) according to the embodiment. Figure 9 is a flowchart showing an example of the measurement method (temperature measurement) according to the embodiment.

[0063] In Figure 8 In the measurement method of the resonant noise measurement shown, first, the reader antenna RA transmits an electrical signal into the chamber 1 (step S41). At this time point, the jig LW is not placed on the stage ST. Next, the reader antenna RA receives the electrical signal reflected in the chamber 1 (step S42).

[0064] Next, the PC30 obtains first measurement data having a resonant frequency from the received electrical signal, stores it as reference data in the memory (step S43), and ends this process. Thus, reference data for representing the resonant noise is created.

[0065] In Figure 9 In the measurement method of the temperature measurement shown, first, the reader antenna RA transmits an electrical signal into the chamber 1 (step S51). At this time point, the jig LW is placed on the stage ST. Each SAW device 41 mounted on the SAW sensors 40a to 40i receives the electrical signal from the reader antenna RA (step S52). Next, each SAW device 41 resonates at an inherent specific frequency according to the pattern of the electrode 41a (step S53), and transmits an electrical signal having the resonant frequency (step S54).

[0066] Next, the reader antenna RA receives an electrical signal having the electrical signal detected by each SAW device 41 and the reflected signal resonating in the chamber 1 (step S55). Next, the PC30 obtains second measurement data from the received electrical signal, subtracts the reference data from the obtained second measurement data (step S56), calculates the temperature based on the second measurement data after the subtraction calculation (step S57), and ends this process. Thus, the temperature can be accurately calculated based on the second measurement data after removing the resonant noise.

[0067] [Effect]

[0068] The result of removing the resonant noise (reference data) from the second measurement data using the above-described measurement method according to the embodiment is as Figure 10 shown. Figure 10 (a) shows an example of the waveform of the resonant noise.

[0069] In Figure 10 (b) to (d) show the electric signals received from the SAW devices 41 mounted on each of the three SAW sensors 40 serving as antennas A, B, and C, and the electric signals reflected in the chamber 1. The results before (waveform Aw) and after (waveform Bw) removal of the resonance noise of the second measurement data detected in each antenna are shown.

[0070] Thus, for example, as shown in Figure 10 (b) to (d), it can be seen that, compared with before the removal of the resonance noise (waveform Aw), the noise components around the peak of the signal are removed after the removal (waveform Bw). As described above, it can be seen that the second measurement data after the removal of the resonance noise (waveform Bw) in which the resonance noise included in before the removal of the resonance noise (waveform Aw) is removed is obtained. Based on the above results, by calculating the temperature using the second measurement data after the removal of the resonance noise (waveform Bw), since the resonance noise component is not included, the temperature measurement can be accurately performed.

[0071] Figure 11 shows Figure 10 the signal-to-noise ratios (S / N ratios) of antennas A, B, and C shown in (b) to (d) before and after the removal of the resonance noise. From this, it can be seen that for antennas A, B, and C, the S / N ratios after the removal of the resonance noise all show values larger than the S / N ratios before the removal of the resonance noise, and the noise components in the received signal are reduced.

[0072] [Modification Example]

[0073] Finally, with reference to Figure 12 the measurement method (temperature measurement) according to the modification example will be described. Figure 12 is a flowchart showing an example of the measurement method (temperature measurement) according to the modification example. It should be noted that the steps given the same step numbers as those shown in Figure 4 and Figure 6 represent the same processing. The description of the steps for the same processing is omitted or simplified.

[0074] When this process starts, the PC 30 executes the processes of steps S21, S22, S31, and S32, subtracts the first measurement data (reference data) from the second measurement data, and removes the noise.

[0075] Next, the PC 30 calculates the S / N ratio, which indicates to what extent the noise in the region of each SAW device 41 exists with respect to the peak of the resonance frequency inherent in each SAW device 41 (step S61). Next, the PC 30 determines whether the S / N ratio of each SAW device 41 is greater than a predetermined threshold value (step S62).

[0076] When it is determined that the S / N ratio of each SAW device 41 is greater than a predetermined threshold, the PC 30 calculates the temperature at each position of the SAW device 41 (step S63). On the other hand, when it is determined that the S / N ratio of each SAW device 41 is less than or equal to the predetermined threshold, the PC 30 determines that the noise in the area where the SAW device 41 is located cannot be completely removed, and temperature calculation is performed in the SAW device 41 (step S64). Next, the PC 30 determines whether the determination for all the SAW devices 41 has been completed (step S65). If the determination for all the SAW devices 41 has not been completed, the process returns to step S62 and the processes after step S62 are executed. When the determination for all the SAW devices 41 is completed, this process ends.

[0077] For example, when the threshold value in step S62 is set to "5", in the Figure 11 example, for antenna A and antenna C, since their S / N ratios are greater than the threshold value, it is determined that the influence of noise is small and temperature calculation is performed. On the other hand, for antenna B, since its S / N ratio is less than the threshold value, it is determined that the influence of noise is large and temperature calculation is not performed. Thus, the accuracy of temperature measurement using the SAW device 41 can be improved.

[0078] As described above, by the measurement method of the embodiment, the resonance noise generated in the chamber 1 can be removed, and the temperature of the mounting surface of the mounting table ST in the chamber 1 can be accurately predicted.

[0079] It should be considered that the measurement method and measurement system according to the embodiment disclosed this time are exemplary in all aspects and not restrictive. Without departing from the appended claims and their gist, the above embodiments can be modified and improved in various ways. For the content described in the above multiple embodiments, other structures can also be adopted without contradiction, and combinations can be made without contradiction.

[0080] For example, although the temperature of the mounting table is given as an example of the physical property in the semiconductor manufacturing apparatus in the embodiment, it is not limited thereto. In the embodiment, as the physical property in the semiconductor manufacturing apparatus, the environmental information in the chamber (for example, the wafer strain distribution) can also be predicted.

[0081] The semiconductor manufacturing apparatus of the present disclosure can be applied to any type of apparatus such as an atomic layer deposition (ALD) apparatus, a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), a radial line slot antenna (RLSA), an electron cyclotron resonance plasma (ECR), and a helicon wave plasma (HWP).

[0082] In addition, the semiconductor manufacturing apparatus can be an apparatus for performing a predetermined process (such as a film formation process, an etching process, etc.) on a substrate.

Claims

1. A measurement method, carried out by a semiconductor manufacturing apparatus having a chamber, the measurement method comprising: A process of obtaining first measurement data having the resonant frequency in the chamber based on an electrical signal transmitted into the chamber in a state where a jig capable of wireless communication is not arranged in the chamber, and using the first measurement data as reference data; A process of obtaining second measurement data having the resonant frequency in the chamber and the resonant frequency detected by a sensor mounted on the jig based on an electrical signal transmitted into the chamber in a state where the jig is arranged in the chamber; and A process of subtracting the reference data from the obtained second measurement data to remove noise.

2. The measurement method according to claim 1, further comprising: A process of predicting the physical characteristics in the chamber based on the second measurement data after removing the noise.

3. The measurement method according to claim 2, wherein, The jig is placed on a stage in the chamber. The characteristic is the temperature of the stage.

4. The measurement method according to claim 3, wherein, Each of the plurality of sensors mounted on the jig has an inherent resonant frequency. In the process of predicting the characteristic, the second measurement data having the resonant frequency detected by each of the plurality of sensors is obtained, and the temperature at each of the plurality of sensors is predicted based on the resonant frequency included in the second measurement data after subtracting the reference data.

5. The measurement method according to any one of claims 1 to 4, further comprising: A process of calculating the signal-to-noise ratio, i.e., the S / N ratio, at the peak of the inherent resonant frequency of the sensor mounted on the jig; And In a case where the calculated signal-to-noise ratio is greater than a predetermined threshold, calculating the temperature based on the detection value detected by the sensor mounted on the jig.

6. A measurement system, comprising: A semiconductor manufacturing apparatus having a chamber; A jig capable of wireless communication; A reader antenna; And An information processing device, wherein the reader antenna receives first measurement data having the resonant frequency in the chamber based on an electrical signal transmitted into the chamber in a state where the jig is not arranged in the chamber, the information processing device obtains the first measurement data received by the reader antenna and uses the first measurement data as reference data, the reader antenna receives second measurement data having the resonant frequency in the chamber and the resonant frequency detected by a sensor mounted on the jig based on an electrical signal transmitted into the chamber in a state where the jig is arranged in the chamber, the information processing device obtains the second measurement data received by the reader antenna and subtracts the reference data from the obtained second measurement data to remove noise.

7. The measurement system according to claim 6, wherein, The jig is in the shape of a wafer.

8. The measurement system according to claim 6 or 7, wherein, The jig has a plurality of the sensors mounted on a base of a silicon substrate.

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