Substrate processing system and device, switching timing production auxiliary device and method

Abstract

The present invention provides a substrate processing system and device, a switching timing production auxiliary device and method, which can improve the accuracy of the switching timing of the processing. The substrate processing system includes a substrate processing device and a switching timing production auxiliary device including an acquisition unit, a selection unit, a determination unit and an output unit. The substrate processing device performs processing on the substrate based on the process, and the acquisition unit obtains a measured value of the amount of particles from a measuring device that measures the amount of particles contained in the gas for each property of particles including atoms and molecules contained in the gas within the substrate processing device during the execution of the processing. The selection unit selects a predetermined number of properties of particles from the properties of the particles in the order of the change in the amount of particles over time from large to small. The determination unit determines the calculation formula and switching conditions for determining the switching timing based on the change in the amount of particles of each property of the selected particles over time. The output unit outputs the calculation formula and switching conditions to the substrate processing device.

Description

Technical Field

[0001] Various aspects and embodiments of the present disclosure relate to a substrate processing system, a switching timing manufacturing assistance device, a switching timing manufacturing assistance method, and a substrate processing device. Background Art

[0002] During the semiconductor device manufacturing process, substrates undergo various processes, including film formation and etching. Furthermore, when etching substrates with multiple layers, processing conditions, such as etching gas and pressure, may differ for each layer. Therefore, once etching of a layer is complete, the processing conditions must be switched to etch the underlying layer. However, it is difficult to monitor the substrate's condition during processing. Therefore, the progress of etching is estimated based on changes in the composition of the gas within the chamber housing the substrate, allowing switching of processing conditions.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 7-50289 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a substrate processing system, a switching timing production assisting device, a switching timing production assisting method, and a substrate processing device capable of improving the accuracy of switching timing of processing.

[0008] Solutions for solving problems

[0009] One aspect of the present disclosure is a substrate processing system comprising: a substrate processing apparatus that processes a substrate based on a recipe that describes processing conditions for each of a plurality of processes; and a switching timing creation assistance device that assists in creating switching timings for processes performed on the substrate. The switching timing creation assistance device comprises an acquisition unit, a selection unit, a determination unit, and an output unit. The substrate processing apparatus processes the substrate based on the recipe. The acquisition unit acquires a measured value of the particle quantity from a measuring device that measures the quantity of particles, including atoms and molecules, contained in a gas within the substrate processing apparatus during the execution of the process. The selection unit selects a predetermined number of particle properties from the particle properties in descending order of the amount of change in the particle quantity over time. The determination unit determines a calculation expression and switching conditions for determining the switching timing based on the change in the particle quantity over time for each of the selected particle properties. The output unit outputs the calculation expression and switching conditions to the substrate processing apparatus. The substrate processing apparatus comprises an execution unit, a calculation unit, and an instruction unit. The execution unit executes the substrate processing based on the recipe. The calculation unit calculates a value of the calculation expression based on the amount of particles measured by the measuring device for each property of the particles included in the calculation expression. The instruction unit instructs the execution unit to switch the process when the value of the calculation expression satisfies a switching condition.

[0010] Effects of the Invention

[0011] According to various aspects and embodiments of the present disclosure, it is possible to improve the accuracy of switching timing of processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 1 is a system configuration diagram showing an example of a substrate processing system in one embodiment of the present disclosure.

[0013] Figure 2 This is a schematic cross-sectional view showing an example of the substrate processing apparatus according to the first embodiment.

[0014] Figure 3 This is a block diagram showing an example of the functional configuration of a control device.

[0015] Figure 4 This is a block diagram showing an example of a measuring device in the first embodiment.

[0016] Figure 5 This is a block diagram showing an example of the functional configuration of an assist device.

[0017] Figure 6 This is a flowchart showing an example of processing by the support device in the first embodiment.

[0018] Figure 7A 1 is a cross-sectional view showing an example of a substrate W before etching.

[0019] Figure 7B FIG. 1 is a cross-sectional view showing an example of the substrate W after etching.

[0020] Figure 8A This is a diagram showing an example of the emission intensity for each wavelength immediately after the start of etching.

[0021] Figure 8B This is a diagram showing an example of the light emission intensity for each wavelength immediately before the end of etching.

[0022] Figure 9 This is a diagram showing an example of temporal changes in the emission intensity of wavelengths X, Y, and Z.

[0023] Figure 10 This is a diagram showing an example of the amount of change in luminous intensity at each wavelength.

[0024] Figure 11 This is a diagram showing an example of the amount of change in the value of an arithmetic expression.

[0025] Figure 12 This is a flowchart showing an example of processing performed by the substrate processing apparatus in the first embodiment.

[0026] Figure 13 This is a diagram showing an example of a computer that realizes the functions of an assist device.

[0027] Figure 14 This is a schematic cross-sectional view showing an example of a substrate processing apparatus according to the second embodiment.

[0028] Figure 15 This is a block diagram showing an example of a measuring device in the second embodiment.

[0029] Figure 16 This is a flowchart showing an example of processing by the support device in the second embodiment.

[0030] Description of Reference Numerals

[0031] W: substrate; 1: substrate processing system; 20a: substrate processing apparatus; 20b: substrate processing apparatus; 21: chamber; 21s: internal space; 21p: piping; 21w: window member; 22: support portion; 220: lower electrode; 221: electrostatic chuck; 222: edge ring; 23: upper electrode showerhead assembly; 24: gas supply portion; 25: RF power supply portion; 26: exhaust system; 28: control device; 280: calculation portion; 281: indication portion; 2 82: Execution unit; 283: DB; 30a: Measuring device; 31a: Light guiding unit; 32a: Diffraction grating; 33a: Light receiving unit; 34a: Control unit; 30b: Measuring device; 31b: Ionization unit; 32b: Mass separation unit; 33b: Detection unit; 34b: Differential exhaust unit; 35b: Control unit; 40: Auxiliary device; 400: DB; 41: Receiving unit; 42: Determining unit; 43: Acquiring unit; 44: Selecting unit; 45: Determining unit; 46: Output unit. DETAILED DESCRIPTION

[0032] Below, embodiments of a substrate processing system, a switching timing production assisting device, a switching timing production assisting method, and a substrate processing device are described in detail based on the accompanying drawings. The disclosed substrate processing system, switching timing production assisting device, switching timing production assisting method, and substrate processing device are not limited to the following embodiments.

[0033] Furthermore, for substrates with the same film being processed but with different pore sizes and numbers to be etched, the amount of change in the gas composition within the chamber may vary. Therefore, when the pore sizes and numbers differ, the timing of switching processing conditions and the state of the gas composition within the chamber must be determined individually for each substrate.

[0034] As such, the timing of switching process conditions requires prior experimentation for each combination of process conditions, the state of the film being processed, and the state of the chamber, requiring considerable time and effort to cope with high-variety, low-volume production. Furthermore, even after conducting prior experiments, human judgment is still required, for example, to determine physical quantities such as wavelength and thresholds used in determining switching timing, requiring a high level of technical expertise. Furthermore, human operations can sometimes lead to errors. Furthermore, human operations are subject to individual differences and personal biases, making it difficult to maintain switching timing with a precision exceeding a fixed level.

[0035] Therefore, the present disclosure provides a technology capable of improving the accuracy of switching timing of processes.

[0036] (First embodiment)

[0037] [Structure of Substrate Processing System 1]

[0038] Figure 1 1 is a system configuration diagram showing an example of a substrate processing system 1 in one embodiment of the present disclosure. The substrate processing system 1 includes a substrate processing apparatus 20a, a measuring device 30a, and an auxiliary device 40. The auxiliary device 40 is an example of a switching timing production auxiliary device.

[0039] The substrate processing apparatus 20a performs predetermined processing such as film formation, etching, or modification on a substrate W. In this embodiment, the substrate processing apparatus 20a is a plasma etching apparatus that uses plasma to etch a substrate W having a film to be processed. The substrate processing apparatus 20a accommodates the substrate W within a chamber, converts the gas supplied into plasma, and etches the film to be processed using the ions and active species contained in the plasma.

[0040] The substrate processing apparatus 20a performs multiple processes on the substrate W while switching processing conditions. The timing for switching processing conditions is determined based on the state of the gas within the chamber measured by the measuring device 30a. The state of the gas within the chamber includes, for example, the amount of particles of various properties, including atoms and molecules, present within the chamber.

[0041] The measuring device 30a measures the state of the gas in the substrate processing apparatus 20a and outputs the measured value to the substrate processing apparatus 20a and the auxiliary device 40. In the present embodiment, the measuring device 30a is, for example, an OES (Optical Emission Spectrometer).

[0042] The assist device 40 causes the substrate processing apparatus 20a to test-etch a substrate W and causes the measuring device 30a to measure the emission intensity of each wavelength of the gas within the chamber. The assist device 40 then identifies one or more wavelengths at which the emission intensity within the chamber varies significantly. Using these identified wavelengths, the assist device 40 determines a calculation formula for calculating the value that varies significantly at the process switching timing. The assist device 40 then determines the value of the calculation formula for the process switching timing as a switching condition and outputs the determined calculation formula and switching condition to the substrate processing apparatus 20a.

[0043] While etching a substrate W, the substrate processing apparatus 20a obtains, from the measuring device 30a, the emission intensity at the wavelength included in the equation determined by the auxiliary device 40. The substrate processing apparatus 20a then calculates the value of the equation based on the obtained emission intensity and compares the value with the switching condition determined by the auxiliary device 40. If the value of the equation satisfies the switching condition, the substrate processing apparatus 20a switches the etching process conditions. Switching process conditions also includes switching from ongoing processing conditions to processing completion conditions, i.e., switching to the end of processing.

[0044] [Structure of Substrate Processing Apparatus 20a]

[0045] Figure 2 This is a schematic cross-sectional view showing an example of a substrate processing apparatus 20 a in Embodiment 1. The substrate processing apparatus 20 a includes a chamber 21 , a gas supply unit 24 , an RF (Radio Frequency) power supply unit 25 , an exhaust system 26 , and a control device 28 .

[0046] In this embodiment, the chamber 21 includes a support portion 22 and an upper electrode showerhead assembly 23. The support portion 22 is disposed in the lower region of the internal space 21s of the chamber 21. The upper electrode showerhead assembly 23 is disposed above the support portion 22 and can function as part of the ceiling of the chamber 21.

[0047] The chamber 21 is formed of a conductive member such as aluminum whose inner wall surface is anodized, and is grounded.

[0048] The support portion 22 is configured to support the substrate W within the chamber 21. In this embodiment, the support portion 22 includes a lower electrode 220, an electrostatic chuck 221, and an edge ring 222. The electrostatic chuck 221 is disposed on the lower electrode 220 and is configured to support the substrate W via its upper surface. The edge ring 222 is disposed on the upper surface of the peripheral portion of the lower electrode 220 so as to surround the substrate W.

[0049] A heater (not shown) may be provided within the support portion 22. Furthermore, a temperature control flow path (not shown) is formed within the support portion 22, through which a fluid, temperature-controlled by a cooling device (not shown), circulates. The temperature of the substrate W placed on the electrostatic chuck 221 is controlled by the heater within the support portion 22 and the fluid circulating within the temperature control flow path of the support portion 22.

[0050] The upper electrode shower head assembly 23 is configured to supply one or more gases from the gas supply unit 24 to the internal space 21s. In this embodiment, the upper electrode shower head assembly 23 includes a gas inlet 23a, a gas diffusion chamber 23b, and a plurality of gas outlets 23c. The gas supply unit 24 and the gas diffusion chamber 23b are fluidically connected via the gas inlet 23a. The gas diffusion chamber 23b and the internal space 21s are fluidically connected via the plurality of gas outlets 23c. In this embodiment, the upper electrode shower head assembly 23 is configured to supply one or more gases from the gas inlet 23a to the internal space 21s via the gas diffusion chamber 23b and the plurality of gas outlets 23c.

[0051] The upper electrode showerhead assembly 23 includes a gas source 240 and a flow controller 241. The gas source 240 is a supply source for process gases such as etching gas. The flow controller 241 can include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the flow controller 241 can include one or more flow modulation devices for modulating or pulsing the flow of one or more process gases. The flow controller 241 controls the flow of the process gas supplied from the gas source 240 and supplies the process gas with the controlled flow to the gas inlet 23a.

[0052] The RF power supply unit 25 is configured to supply RF power, such as one or more RF signals, to both the lower electrode 220 and the upper electrode showerhead assembly 23, or to one or more electrodes, such as the lower electrode 220 or the upper electrode showerhead assembly 23. In this embodiment, the RF power supply unit 25 includes an RF generator 250 and a matching circuit 251. The RF power supply unit 25 in this embodiment is configured to supply a first RF signal from the RF generator 250 to the lower electrode 220 via the matching circuit 251. The RF spectrum of the first RF signal includes a portion of the electromagnetic spectrum with frequencies ranging from 3 Hz to 3000 GHz. For electronic material processes such as semiconductor processes, the frequency of the RF spectrum used to generate plasma is preferably within the range of 100 kHz to 3 GHz, and more preferably within the range of 200 kHz to 150 MHz. For example, the frequency of the first RF signal may be within the range of 27 MHz to 100 MHz.

[0053] Furthermore, a second RF signal for attracting ions contained in the plasma may be supplied to the lower electrode 220. For example, the frequency of the second RF signal may be within the range of 400 kHz to 13.56 MHz. Alternatively, a DC (direct current) pulse may be supplied to the lower electrode 220 instead of the second RF signal.

[0054] Moreover, although not shown in the figure, other embodiments are contemplated herein. For example, in the RF power supply unit 25 of the alternative embodiment, the RF generating unit may supply a first RF signal to the lower electrode 220, another RF generating unit may supply a second RF signal to the lower electrode 220, and another RF generating unit may supply a third RF signal to the upper electrode shower head assembly 23. In addition, in other alternative embodiments, a DC voltage may be applied to the upper electrode shower head assembly 23. In addition, in various embodiments, the amplitude of more than one RF signal (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsing the amplitude of the RF signal between an on state and an off state or between a plurality of different on states. In addition, the phase matching of the RF signal may be controlled, and the phase matching of the amplitude modulation of a plurality of RF signals may be synchronized or asynchronous.

[0055] The exhaust system 26 can be connected to, for example, an exhaust port 21e provided at the bottom of the chamber 21. The exhaust system 26 can include a vacuum pump such as a pressure valve, a turbomolecular pump, a roughing pump, or a combination thereof.

[0056] An opening is formed in a side wall of the chamber 21, and a window member 21w made of quartz, etc. is provided in the opening. Light emitted by particles such as atoms and molecules in the plasma generated in the internal space 21s is received by the measuring device 30a through the window member 21w.

[0057] In this embodiment, the control device 28 has, for example, Figure 3 Function as shown. Figure 3 2 is a block diagram showing an example of the functional configuration of the control device 28. The control device 28 includes a calculation unit 280, an instruction unit 281, an execution unit 282, and a DB (Data Base) 283.

[0058] A recipe describing the processing conditions for each of the multiple processes is stored in advance in the database 283. Furthermore, the database 283 stores the calculation formulas and switching conditions determined by the assist device 40 for each of the multiple processes described in the recipe. The execution unit 282 controls various components of the substrate processing apparatus 20a, such as the gas supply unit 24, the RF power supply unit 25, and the exhaust system 26, based on the processing conditions for each process described in the recipe stored in the database 283, thereby executing the etching process. Furthermore, at the timing indicated by the instruction unit 281, the execution unit 282 switches the processing conditions of the currently executing process to those of the next process, thereby sequentially executing processes under different processing conditions.

[0059] When performing plasma etching in substrate processing apparatus 20a, a gate valve (not shown) is opened, and a transfer robot (not shown) places substrate W on electrostatic chuck 221. Furthermore, actuator 282 controls exhaust system 26 to exhaust gas within chamber 21. Furthermore, actuator 282 controls gas supply unit 24 to supply etching gas from gas source 240 into chamber 21 at a flow rate specified in the processing conditions. Consequently, the pressure within chamber 21 is adjusted to the pressure specified in the processing conditions.

[0060] The execution unit 282 then controls the RF power supply unit 25 to supply a first RF power having a frequency and magnitude specified by the processing conditions to the lower electrode 220. This generates an RF electric field between the upper electrode showerhead assembly 23 and the lower electrode 220, converting the etching gas supplied into the chamber 21 into plasma. The ions, radicals, and other elements contained in the plasma generated within the chamber 21 etch the substrate W.

[0061] The calculation unit 280 receives the calculation formula and switching conditions for each process from the support device 40 and stores the received calculation formula and switching conditions for each process in the database 283. When the execution unit 282 starts a process on a substrate W, the calculation unit 280 reads the calculation formula and switching conditions corresponding to the started process from the database 283. The calculation unit 280 then obtains the measured values ​​of the luminous intensity at the wavelengths included in the read calculation formula from the measuring device 30a. The calculation unit 280 then calculates the value of the calculation formula based on the measured values ​​of the luminous intensity at each wavelength and outputs the calculated value of the calculation formula and the switching conditions corresponding to the calculation formula to the indicator 281.

[0062] The instruction unit 281 determines whether the value of the arithmetic expression calculated by the calculation unit 280 satisfies the switching condition. If the value of the arithmetic expression satisfies the switching condition, the instruction unit 281 instructs the execution unit 282 to switch the process.

[0063] [Structure of the measuring device 30a]

[0064] Figure 4 This is a block diagram illustrating an example of a measuring device 30a in the first embodiment. The measuring device 30a includes a light guide 31a, a diffraction grating 32a, a light receiver 33a, and a control unit 34a. While the substrate processing apparatus 20a is processing a substrate W, the measuring device 30a measures the temporal change in the amount of particles, including atoms and molecules, contained in the gas within the chamber 21. In this embodiment, the particle property is the wavelength of light observed by the particles' emission.

[0065] The light guide 31 a is, for example, an optical fiber, receives light emitted from particles included in the plasma generated in the chamber 21 of the substrate processing apparatus 20 a via the window member 21 w , and guides the received light to the diffraction grating 32 a .

[0066] The diffraction grating 32 a separates the light received via the light guiding portion 31 a into wavelengths and directs the separated light toward the light receiving portion 33 a .

[0067] The light receiving unit 33 a measures the intensity of light for each wavelength and outputs the measured value to the control unit 34 a .

[0068] The control unit 34 a outputs the measured value of the light emission intensity for each wavelength to the substrate processing apparatus 20 a and the auxiliary apparatus 40 .

[0069] [Structure of the assist device 40]

[0070] Figure 5 4 is a block diagram showing an example of the functional configuration of the support device 40. The support device 40 includes a receiving unit 41, a specifying unit 42, an acquiring unit 43, a selecting unit 44, a determining unit 45, and an output unit 46.

[0071] The receiving unit 41 receives information from a user of the substrate processing system 1 regarding the type of film being processed, the type of gas used in processing the substrate W, and a monitoring quantity indicating the number of particles to be monitored. In this embodiment, the monitoring quantity is the number of wavelengths to be monitored. The receiving unit 41 then outputs the received information regarding the type of film, type of gas, and monitoring quantity to the determining unit 42.

[0072] The determination unit 42 refers to the DB 400 to determine the properties of the particles contained in the gas within the substrate processing apparatus 20a when processing a film of the type received by the receiving unit 41, and the properties of the particles contained in the gas corresponding to the type received by the receiving unit 41. The determination unit 42 then outputs the determined properties of the particles to the acquisition unit 43.

[0073] In this embodiment, the identification unit 42 refers to the database 400 to identify the wavelength of light observed by the emission of particles generated when the film of the type received by the receiving unit 41 is processed. Furthermore, in this embodiment, the identification unit 42 refers to the database 400 to identify the wavelength of light observed by the emission of particles contained in the gas corresponding to the type received by the receiving unit 41. The identification unit 42 then outputs information on the identified wavelength to the acquisition unit 43.

[0074] In this embodiment, information on the wavelength of light observed by luminescence of particles generated when the film is processed is stored in advance in DB 400 for each type of film. Furthermore, information on the wavelength of light observed by luminescence of particles generated when the gas is processed is stored in advance in DB 400 for each type of gas.

[0075] The acquisition unit 43 causes the substrate processing apparatus 20a to experimentally perform processing on the substrate W based on the recipe. Furthermore, during the processing, the acquisition unit 43 acquires, from the measuring device 30a, a measured value of the amount of particles for each property of the particles contained in the gas within the chamber 21. The acquisition unit 43 then outputs the amount of particles for each property to the selection unit 44.

[0076] In this embodiment, the acquisition unit 43 acquires the measured value of the luminescence intensity observed by the particle luminescence from the measuring device 30a for each wavelength of light observed by the particle luminescence determined by the determination unit 42 as the measured value of the amount of particles contained in the gas in the chamber 21.

[0077] The selection unit 44 stores the measured values ​​of the particle quantity output from the acquisition unit 43 in a time series for each property of the particles determined by the determination unit 42 until processing is completed. Furthermore, the selection unit 44 selects the properties of the monitored number of particles received by the reception unit 41 in descending order of the amount of change in the particle quantity over time from the largest to the smallest among the properties of the particles. Furthermore, the selection unit 44 outputs the time series measured values ​​of the particle quantity for each of the selected properties to the determination unit 45.

[0078] In this embodiment, the selection unit 44 stores the measured values ​​of luminous intensity output from the acquisition unit 43 in a time-series manner for each wavelength determined by the determination unit 42 until processing is completed. Furthermore, the selection unit 44 selects the wavelengths for which luminous intensity was measured, in descending order of the amount of change in luminous intensity over time, corresponding to the number of wavelengths received by the reception unit 41 for monitoring. Furthermore, the selection unit 44 outputs the time-series measured values ​​of luminous intensity for each selected wavelength to the determination unit 45.

[0079] Determining unit 45 determines the calculation formula and switching conditions for determining the switching timing based on the temporal changes in the amount of each selected particle property. In this embodiment, determining unit 45 determines the calculation formula and switching conditions for determining the switching timing based on the temporal changes in the emission intensity of each selected wavelength. The calculation formula includes information about the wavelength selected by selecting unit 44.

[0080] In this embodiment, the determination unit 45 determines an arithmetic expression based on the emission intensity values ​​immediately after etching begins and immediately before etching ends, at each selected wavelength. Furthermore, the determination unit 45 determines a switching condition based on the emission intensity values ​​immediately before etching ends. Specific examples of the arithmetic expression and switching conditions are described below.

[0081] The output unit 46 outputs the calculation expression and the switching condition determined by the determination unit 45 to the substrate processing apparatus 20 a .

[0082] [Processing of the Assist Device 40]

[0083] Figure 6 This is a flowchart showing an example of the processing of the assist device 40 in the first embodiment. Figure 6 The processing illustrated. Figure 6 The illustrated processing is an example of a switching timing production support method.

[0084] First, the receiving unit 41 receives the type of film to be processed, the type of gas used in the process, and the number of monitored gases from the user of the substrate processing system 1 ( S10 ), and then outputs the received information to the determining unit 42 .

[0085] Next, the identification unit 42 refers to the database 400 to identify the wavelength of light observed by the emission of particles generated when the film of the type received by the receiving unit 41 is processed (S11). Furthermore, the identification unit 42 refers to the database 400 to identify the wavelength of light observed by the emission of particles contained in the gas corresponding to the type received by the receiving unit 41 (S11). The identification unit 42 then outputs information on the identified wavelength to the acquisition unit 43.

[0086] Next, the acquisition unit 43 causes the substrate processing apparatus 20a to experimentally process the substrate W based on the recipe (S12). In the experimental processing of the substrate W, a substrate W having the same structure as that used in the actual processing is used.

[0087] Next, the acquisition unit 43 acquires, from the measuring device 30a, the measured value of the luminescence intensity observed by the particles for each wavelength of light determined by the determination unit 42 as a measured value of the amount of particles contained in the gas within the chamber 21 (S13). The acquisition unit 43 then outputs information on the luminescence intensity for each wavelength to the selection unit 44. Step S13 is an example of an acquisition step.

[0088] Next, the selection unit 44 stores the measured values ​​of luminous intensity output from the acquisition unit 43 in a time-series manner for each wavelength determined by the determination unit 42 until processing is complete. The selection unit 44 then selects the wavelengths for which luminous intensity was measured, in descending order of the amount of change in luminous intensity over time, corresponding to the number of wavelengths received by the reception unit 41 (S14). The selection unit 44 then outputs the measured values ​​of luminous intensity over time for each selected wavelength to the determination unit 45. Step S14 is an example of a selection step.

[0089] Next, the decision unit 45 decides a calculation expression and a switching condition for determining the switching timing based on the temporal change in the emission intensity of each selected wavelength (S15). Step S15 is an example of a decision step.

[0090] Next, the output unit 46 outputs the determined calculation formula and switching condition to the substrate processing apparatus 20a (S16). Step S16 is an example of an output step. Then, the support device 40 ends the processing shown in this flowchart.

[0091] Here, in Figure 6 In the illustrated process, for example Figure 7A As shown in FIG, a substrate W having a film 51 to be etched stacked on a base member 50 is subjected to a trial etching process. When the etching process is completed, for example, Figure 7B As shown, the film 51 to be etched is removed from the substrate W.

[0092] Immediately after etching starts, the measuring device 30a measures, for example, Figure 8A The luminous intensity at each wavelength is shown. Figure 8A : is a graph showing an example of the luminous intensity of each wavelength immediately after the start of etching. Figure 8B The luminous intensity at each wavelength is shown. Figure 8B This is a diagram showing an example of the luminous intensity of each wavelength immediately before the end of etching. Figure 8A and Figure 8B When compared, the amount of change in the emission intensity of wavelengths X, Y, and Z is greater than the amount of change in the emission intensity of other wavelengths.

[0093] For example, when the number of monitoring signals received from the user by the receiving unit 41 is "3", the selecting unit 44 selects wavelengths X, Y and Z as the top three wavelengths with the largest temporal changes in luminous intensity. Figure 9 As shown.

[0094] Figure 9This is a diagram showing an example of the temporal change of the luminous intensity of wavelengths X, Y, and Z. Figure 9 In the illustrated temporal variation of the luminescence intensity, the luminescence intensity barely changes in the interval 0 to 60 immediately after etching begins, but the temporal variation of the luminescence intensity increases in the interval 61 to 74. Furthermore, the luminescence intensity barely changes in the interval 75 to 80 immediately before etching ends.

[0095] Furthermore, for wavelengths X and Y, the emission intensity is lower in the interval 75 to 80 just before etching ends, compared to the interval 0 to 60 just after etching begins. On the other hand, for wavelength Z, the emission intensity is higher in the interval 75 to 80 just before etching ends, compared to the interval 0 to 60 just after etching begins. In other words, wavelengths X and Y are wavelengths at which the emission intensity decreases as etching progresses, while wavelength Z is a wavelength at which the emission intensity increases as etching progresses.

[0096] When calculating Figure 9 When the amount of change in the luminous intensity of the wavelengths X, Y and Z over time and the average value and range of each interval are shown, for example, Figure 10 As shown. Figure 10 This is a graph showing an example of the amount of change in luminous intensity at each wavelength. The amount of change is calculated according to the following (1).

[0097]

Number 1

[0098] Change = 20log{(average value of interval 75-80) / (average value of interval 0-60)}...(1)

[0099] When referring to Figure 10 The difference between the average value of the interval 75 to 80 and the average value of the interval 0 to 60 is not large relative to the range of each interval. Therefore, if the switching timing of the processing conditions is determined by using one of the wavelengths X, Y, and Z, the switching timing may be misjudged.

[0100] Therefore, in this embodiment, Figure 9 A predetermined calculation formula is applied to the emission intensities of the illustrated wavelengths X, Y, and Z, and the timing of switching the processing conditions is determined based on the temporal change in the calculation formula value. As the calculation formula value in this embodiment, for example, the value E of the following formula (2) is used.

[0101]

Number 2

[0102]

[0103] In the above formula (2), A(m) represents the emission intensity of the mth wavelength whose emission intensity decreases as etching progresses. maxIndicates the maximum value of the emission intensity in the interval 0 to 60. In addition, B(m) indicates the emission intensity of the nth wavelength whose emission intensity increases as etching progresses. min It represents the minimum value of the luminous intensity in the interval 0 to 60. In addition, m and n are natural numbers satisfying n+m=monitoring number.

[0104] exist Figure 9 In the example, for example, the following formula (3) is determined as the calculation formula.

[0105]

Number 3

[0106] E=(|XX max |+|Y-Ym ax |)×(|ZZ min |)...(3)

[0107] When the variation and the average value and range of each interval are calculated based on the above formula (3), for example, Figure 11 As shown. Figure 11 This is a diagram showing an example of the amount of change in the value E of the calculation expression. Figure 11 When the average value of the interval 75 to 80 changes relative to the average value of the interval 0 to 60, the change is Figure 10 Therefore, by determining the switching timing of the processing conditions based on the value of the above formula (3), compared with the case where the switching timing of the processing conditions is determined using any one of the wavelengths X, Y, and Z, it is possible to suppress erroneous determination of the switching timing.

[0108] Furthermore, the determination unit 45 determines as the switching condition a condition that the value E of the determined calculation expression is within a predetermined range centered around the average value of the interval 75 to 80 immediately before the end of etching. Furthermore, when the average value of the calculation expression E in the interval 0 to 60 immediately after the start of etching is set to 0% and the average value of the calculation expression E in the interval 75 to 80 immediately before the end of etching is set to 100%, a condition that the value is within a range of 90% or more and 100% or less may be determined as the switching condition.

[0109] Furthermore, for substrates W having the same film to be processed but having different sizes and numbers of holes to be formed by etching, the amount of change in the gas composition within the chamber 21 during processing of the substrates W may vary. Therefore, when the timing of switching the processing conditions and the state of the gas composition within the chamber 21 need to be determined individually for each substrate W.

[0110] To determine the timing for switching process conditions, it's necessary to conduct experiments beforehand for each combination of process conditions, the state of the film being processed, differences in the product mask pattern, and the state of chamber 21. This requires considerable time and effort to handle high-mix, low-volume production. Furthermore, even after conducting these experiments, human judgment is still required, for example, to determine physical quantities such as wavelength and thresholds used in determining switching timing, requiring advanced technical expertise. Errors can also occur during human-related operations. Furthermore, individual differences and personal preferences can influence human operations, making it difficult to maintain switching timing with a precision exceeding a fixed level.

[0111] In contrast, in the substrate processing system 1 of this embodiment, no human intervention is required to conduct pre-tests for each combination of processing conditions, the state of the film being processed, differences in product mask patterns, and the state of the chamber 21. This reduces human error. Furthermore, since operators do not need advanced technical knowledge, anyone can create switching timings with better than fixed accuracy.

[0112] [Processing by the Substrate Processing Apparatus 20a]

[0113] Figure 12 This is a flowchart showing an example of processing of the substrate processing apparatus 20a according to the first embodiment. Figure 12 In addition, Figure 12 Before starting the illustrated process, the calculation unit 280 of the substrate processing apparatus 20 a receives the calculation expression and switching conditions for each process from the support apparatus 40 and stores them in the DB 283 .

[0114] First, the execution unit 282 acquires the recipe from the DB 283 and determines the processing conditions of the process to be executed. Then, the execution unit 282 controls each unit of the substrate processing apparatus 20a based on the determined processing conditions, thereby starting the processing of the substrate W (S20).

[0115] Next, the calculation unit 280 obtains the calculation expression and switching conditions corresponding to the processing executed by the execution unit 282 from the database 283 (S21). The calculation unit 280 then obtains the measured values ​​of the luminous intensity at the wavelengths included in the calculation expression from the measuring device 30a (S22). The calculation unit 280 then calculates the value E of the calculation expression based on the measured values ​​of the luminous intensity at each wavelength (S23). The calculation unit 280 then outputs the calculated value E of the calculation expression and the switching conditions corresponding to the calculation expression to the indication unit 281.

[0116] Next, the instruction unit 281 determines whether the value E of the arithmetic expression calculated by the calculation unit 280 is within the range of values ​​indicated by the switching condition, thereby determining whether the value E of the arithmetic expression satisfies the switching condition (S24). If the value E of the arithmetic expression does not satisfy the switching condition (S24: No), the process of step S22 is executed again.

[0117] On the other hand, if the value E of the calculation expression satisfies the switching condition (S24: Yes), the execution unit 282 refers to the recipe to determine whether a next process exists (S25). If a next process exists (S25: Yes), the execution unit 282 refers to the recipe to switch the processing conditions to those of the next process (S26). The execution unit 282 then controls the various components of the substrate processing apparatus 20a based on the switched processing conditions, thereby starting processing of the substrate W. The process shown in step S21 is then executed again.

[0118] On the other hand, if there is no next process (S25: "No"), the process shown in this flowchart ends. Furthermore, the determination of the end of a process can also be considered a switching of the processing conditions of this embodiment. That is, the technology of this embodiment, as an example of switching processing conditions, can also be applied to the switching from the ongoing processing state to the completed processing state.

[0119] [hardware]

[0120] The auxiliary device 40 is provided by, for example, Figure 13 The structure shown is implemented by a computer 90. Figure 13 This figure shows an example of a computer 90 that realizes the functions of the auxiliary device 40. The computer 90 includes a CPU (Central Processing Unit) 91, RAM (Random Access Memory) 92, ROM (Read Only Memory) 93, an auxiliary storage device 94, a communication I / F (interface) 95, an input / output I / F 96, and a media I / F 97.

[0121] The CPU 91 controls each unit by operating based on programs stored in the ROM 93 or the auxiliary storage device 94. The ROM 93 stores a startup program executed by the CPU 91 when the computer 90 is started, and programs depending on the hardware of the computer 90.

[0122] The auxiliary storage device 94 is, for example, an HDD (Hard Disk Drive) or an SSD (Solid State Drive), and stores programs executed by the CPU 91 and data used by the programs. The CPU 91 reads the programs from the auxiliary storage device 94, loads them into the RAM 92, and executes the loaded programs.

[0123] The communication I / F 95 communicates with the substrate processing apparatus 20a and the measuring device 30a via a communication line such as a LAN (Local Area Network). The communication I / F 95 receives data from the substrate processing apparatus 20a and the measuring device 30a via the communication line and transmits the data to the CPU 91. Furthermore, the communication I / F 95 transmits data generated by the CPU 91 to the substrate processing apparatus 20a and the measuring device 30a via the communication line.

[0124] The CPU 91 controls input devices such as a keyboard and output devices such as a display via the input / output I / F 96. The CPU 91 receives signals input from the input devices via the input / output I / F 96 and transmits the signals to the CPU 91. The CPU 91 also outputs generated data to the output devices via the input / output I / F 96.

[0125] The media I / F 97 reads programs or data stored in the recording medium 98 and stores them in the auxiliary storage device 94. The recording medium 98 is, for example, an optical recording medium such as a DVD (Digital Versatile Disc) or a PD (Phase Change Rewritable Disk), a magneto-optical recording medium such as an MO (Magneto-Optical Disk), a tape medium, a magnetic recording medium, or a semiconductor memory.

[0126] The CPU 91 of the computer 90 executes the program loaded on the RAM 92 , thereby realizing the functions of the accepting unit 41 , the specifying unit 42 , the acquiring unit 43 , the selecting unit 44 , the determining unit 45 , and the output unit 46 .

[0127] The CPU 91 of the computer 90 reads the program loaded on the RAM 92 from the recording medium 98 and stores it in the auxiliary storage device 94 . Alternatively, the program may be acquired from another device via a communication line and stored in the auxiliary storage device 94 .

[0128] The first embodiment has been described above. As described above, the substrate processing system 1 in this embodiment includes a substrate processing apparatus 20a that processes substrates W based on a recipe that describes processing conditions for each of a plurality of processes, and an auxiliary device 40 that assists in determining the timing for switching processes performed on substrates W. The auxiliary device 40 includes an acquisition unit 43, a selection unit 44, a determination unit 45, and an output unit 46. The substrate processing apparatus 20a processes substrates W based on the recipe. The acquisition unit 43 acquires particle quantity measurements from a measuring device 30a that measures the quantity of particles, including atoms and molecules, contained in the gas within the substrate processing apparatus 20a during the execution of the processes. The selection unit 44 selects a predetermined number of particle properties from the particle properties in descending order of the amount of change over time. The determination unit 45 determines a calculation formula and a switching condition for determining the switching timing based on the change in the amount of particles for each of the selected particle properties. The output unit 46 outputs the calculation formula and the switching condition to the substrate processing apparatus 20a. The substrate processing apparatus 20a includes a calculation unit 280, an instruction unit 281, and an execution unit 282. The execution unit 282 executes processing on the substrate W based on the recipe. The calculation unit 280 calculates the value E of the equation based on the particle quantity measured by the measurement device 30a for each of the particle properties included in the equation. If the value E of the equation satisfies a switching condition, the instruction unit 281 instructs the execution unit 282 to switch the processing. This improves the accuracy of the timing of process switching.

[0129] Furthermore, in the above-described embodiment, the auxiliary device 40 includes a receiving unit 41 and a determining unit 42. The receiving unit 41 receives the type of film to be processed and the type of gas used in the process. The determining unit 42 refers to the DB 400, which stores the types of particles generated in the process using the film or gas, and determines the properties of the particles contained in the gas within the substrate processing apparatus 20a when the film of the type received by the receiving unit 41 is processed, as well as the properties of the particles contained in the gas corresponding to the type received by the receiving unit 41. The acquiring unit 43 acquires, from the measuring device 30a, a measured value of the amount of particles contained in the gas within the substrate processing apparatus 20a for each property of the particles determined by the determining unit 42. This eliminates the need for the user to determine the particles to be measured based on the type of film to be processed and the type of gas used in the process.

[0130] In the above-described embodiment, the property of the particles is the wavelength of light observed by the particles' luminescence. Furthermore, the determination unit 42 refers to the database 400 to determine the wavelength of light observed by the particles' luminescence generated when processing a film of the type received by the receiving unit 41, as well as the wavelength of light observed by the particles contained in the gas corresponding to the type received by the receiving unit 41. Furthermore, the acquisition unit 43 acquires, from the measuring device 30a, the measured value of the luminescence intensity observed by the particles for each wavelength of light determined by the determination unit 42 as a measured value of the amount of particles contained in the gas within the substrate processing apparatus 20a. The selection unit 44 selects a predetermined number of wavelengths from among the wavelengths for which luminescence intensity was measured, in descending order of the temporal change in luminescence intensity. The determination unit 45 determines the calculation formula and switching conditions for determining the switching timing based on the temporal change in luminescence intensity for each selected wavelength. The calculation unit 280 calculates the value E of the calculation formula based on the luminescence intensity measured for each wavelength included in the calculation formula. Thus, the switching timing of the process can be determined based on the emission intensity of the wavelength of light emitted from the plasma.

[0131] In the above-described embodiment, the receiving unit 41 also receives a monitoring number, which represents the number of wavelengths of light detected by observing the luminescence of the particles being monitored. The selecting unit 44 selects the wavelengths of the monitoring number received by the receiving unit 41 in descending order of the temporal change in luminescence intensity from the wavelengths at which luminescence intensity was measured. This reduces the processing load on the assisting device 40.

[0132] In addition, the switching timing production assisting method in the above-mentioned embodiment includes an acquisition step, a selection step, a determination step, and an output step. In the acquisition step, the substrate processing device 20a performs processing on the substrate W based on a recipe that describes the processing conditions of each of a plurality of processes, and obtains a measured value of the amount of particles from the measuring device 30a that measures the amount of particles contained in the gas within the substrate processing device 20a for each property of particles including atoms and molecules contained in the gas during the execution of the process. In the selection step, a predetermined number of properties of particles are selected from the properties of the particles in descending order of the amount of change of the amount of particles over time. In the determination step, based on the change of the amount of particles of each property of the selected particles over time, an operation formula and a switching condition for determining the switching timing of the process are determined. In the output step, the operation formula and the switching condition are output to the substrate processing device 20a. As a result, the accuracy of the switching timing of the process can be improved.

[0133] (Second embodiment)

[0134] In the first embodiment described above, the timing of process switching is determined based on the emission intensity at each wavelength of light emitted from the plasma generated in chamber 21. In contrast, in this embodiment, the number of particles contained in the gas within chamber 21 is measured for each mass, and the timing of process switching is determined based on the temporal change in the measured number of particles. Particle mass is one example of a particle property. This makes it possible to determine the timing of process switching even for processes that do not utilize plasma.

[0135] [Structure of Substrate Processing System 1]

[0136] The substrate processing system 1 of this embodiment includes a substrate processing apparatus 20b, a measuring device 30b, and an auxiliary device 40. The substrate processing system 1 of this embodiment is similar to the substrate processing apparatus 20b provided in place of the substrate processing apparatus 20a and the measuring device 30b provided in place of the measuring device 30a. Figure 1 The structure of the substrate processing system 1 of the first embodiment described above is the same, and therefore illustration is omitted.

[0137] [Structure of Substrate Processing Apparatus 20b]

[0138] Figure 14 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 20b according to the second embodiment. Figure 14 Marked with Figure 2 The same marked structure has Figure 2 The structures or functions are the same as in the examples, so the description is omitted.

[0139] An opening is formed in the side wall of the chamber 21, and one end of a pipe 21p is connected to the opening. The other end of the pipe 21p is connected to a measuring device 30b. A portion of the gas in the chamber 21 is sent to the measuring device 30b via the pipe 21p.

[0140] The configuration of the control device 28 in this embodiment is the same as that of the control device 28 except for the following points. Figure 3 The control device 28 illustrated is identical and therefore omitted from illustration. In the embodiment, the calculation unit 280 instructs the measuring device 30b to measure the number of particles per mass included in the equation. Furthermore, the calculation unit 280 obtains the measured value of the number of particles per mass from the measuring device 30b. Furthermore, the calculation unit 280 calculates the value E of the equation based on the measured value of the number of particles per mass and outputs the calculated value E of the equation and the switching condition corresponding to the equation to the instruction unit 281.

[0141] [Structure of the measuring device 30b]

[0142] Figure 15This is a block diagram showing an example of a measuring device 30b in the second embodiment. The measuring device 30b includes an ionization unit 31b, a mass separation unit 32b, a detection unit 33b, a differential pumping unit 34b, and a control unit 35b. The measuring device 30b in this embodiment is, for example, a mass spectrometer.

[0143] The ionization unit 31 b ionizes particles contained in the gas taken in through the pipe 21 p.

[0144] The mass separation unit 32b generates an electric field or magnetic field corresponding to the ratio of mass m to charge z specified by the control unit 35b. Particles ionized by the ionization unit 31b pass through the electric field or magnetic field generated by the mass separation unit 32b. Only particles with a ratio of mass m to charge z corresponding to the generated electric field or magnetic field reach the detection unit 33b.

[0145] The detection unit 33b detects the number of particles that have reached the detection unit 33b via the mass separation unit 32b.

[0146] The differential pumping unit 34 b guides the gas taken in through the pipe 21 p to the ionizing unit 31 b , the mass separation unit 32 b , and the detection unit 33 b by sucking the gas.

[0147] The control unit 35b receives information about mass m from the substrate processing apparatus 20b and the auxiliary device 40 and sets a ratio of mass m to charge z for the mass separator 32b, corresponding to the received mass m. Furthermore, the control unit 35b outputs the number of particles of mass m detected by the detector 33b to the substrate processing apparatus 20b and the auxiliary device 40.

[0148] [Structure of the assist device 40]

[0149] The structure of the assist device 40 in this embodiment is the same as that of the auxiliary device 40 except for the following points. Figure 5 The auxiliary device 40 shown in the example is the same and therefore is not shown in the figure.

[0150] In this embodiment, the receiving unit 41 receives information from a user of the substrate processing system 1 regarding the type of film to be processed, the type of gas used in processing the substrate W, and a monitoring quantity indicating the mass of particles to be monitored. The receiving unit 41 then outputs the received information regarding the type of film, the type of gas, and the monitoring quantity to the determining unit 42.

[0151] In this embodiment, the determination unit 42 refers to the DB 400 to determine the mass of particles contained in the gas within the substrate processing apparatus 20a when a film of the type received by the receiving unit 41 is processed, and the mass of particles contained in the gas corresponding to the type received by the receiving unit 41. The determination unit 42 then outputs the determined mass of the particles to the acquisition unit 43.

[0152] In this embodiment, the mass information of particles generated when processing each film type is stored in advance in DB 400. In addition, the mass information of particles generated when processing each gas type is stored in advance in DB 400.

[0153] In this embodiment, the acquisition unit 43 instructs the measuring device 30b to measure the number of particles for each mass of the particles determined by the determination unit 42. Furthermore, the acquisition unit 43 acquires the measured value of the number of particles for each mass of the particles from the measuring device 30b as a measured value of the amount of particles contained in the gas within the chamber 21. Furthermore, the acquisition unit 43 outputs the measured number of particles for each mass of the particles to the selection unit 44.

[0154] In this embodiment, the selection unit 44 stores the measured values ​​of the number of particles output from the acquisition unit 43 in a time-series manner for each mass determined by the determination unit 42 until processing is completed. Furthermore, the selection unit 44 selects the monitored masses received by the reception unit 41 in descending order of the amount of change in the number of particles over time from the largest to the smallest among the measured masses of the particles. Furthermore, the selection unit 44 outputs the time-series measured values ​​of the number of particles measured for each selected mass to the determination unit 45.

[0155] In this embodiment as well, the number of particles in the etching process is, for example, Figure 8A and Figure 8B However, in this embodiment, Figure 8A and Figure 8B The horizontal axis is mass. Figure 8A and Figure 8B When the amount of change in the number of particles of masses X, Y, and Z is greater than the amount of change in particles of other masses, the masses X, Y, and Z are selected by the selection unit 44 .

[0156] In this embodiment, the determination unit 45 determines the calculation formula based on the number of particles immediately after the start of etching and the number of particles immediately before the end of etching, among the selected numbers of particles of each mass. Furthermore, the determination unit 45 determines the switching condition based on the number of particles immediately before the end of etching.

[0157] In this embodiment, the calculation formula is determined as in the above-mentioned formula (2). However, in this embodiment, A(m) represents the number of particles of the mth mass whose number of particles decreases as the etching progresses. max Indicates the maximum value of the number of particles in the interval 0 to 60. In addition, B(m) indicates the number of particles of the nth mass, the number of which increases as the etching progresses. min It represents the minimum value of the number of particles in the interval 0 to 60. In addition, m and n are natural numbers satisfying n+m=monitoring number.

[0158] When the number of particles of mass X, Y, and Z is assumed to be the number of particles, the vertical axis is the number of particles. Figure 9 Even in such a change, in the present embodiment, the calculation formula is determined as in the above-mentioned formula (3), for example.

[0159] In this embodiment, the determination unit 45 also determines as the switching condition a condition that the value E of the determined calculation expression falls within a predetermined range centered around the average value in the interval 75 to 80 immediately before the end of etching. Furthermore, if the average value of the value E of the calculation expression in the interval 0 to 60 immediately after the start of etching is set to 0% and the average value of the value E in the interval 75 to 80 immediately before the end of etching is set to 100%, the switching condition may be determined to fall within a range of 90% to 100%.

[0160] [Processing of the Assist Device 40]

[0161] Figure 16 This is a flowchart showing an example of the processing of the assisting device 40 in the second embodiment. Figure 16 The processing illustrated.

[0162] First, the receiving unit 41 receives the type of film to be processed, the type of gas used in the process, and the number of monitored gases from the user of the substrate processing system 1 ( S30 ), and outputs the received information to the determining unit 42 .

[0163] Next, the determination unit 42 refers to the DB 400 to determine the mass of particles generated when the film of the type received by the receiving unit 41 is processed, and the mass of particles contained in the gas corresponding to the type received by the receiving unit 41 (S31). The determination unit 42 then outputs information on the determined mass to the acquisition unit 43.

[0164] Next, the acquisition unit 43 causes the substrate processing apparatus 20a to experimentally process the substrate W based on the recipe (S32). In the experimental processing of the substrate W, a substrate W having the same structure as that used in the actual processing is used.

[0165] The acquisition unit 43 then instructs the measuring device 30b to measure the number of particles for each mass of the particles determined by the determination unit 42. The acquisition unit 43 then acquires the measured value of the number of particles for each mass from the measuring device 30b as a measured value of the amount of particles contained in the gas within the chamber 21 (S33). The acquisition unit 43 then outputs information on the number of particles for each mass to the selection unit 44.

[0166] Next, the selection unit 44 stores the measured values ​​of the number of particles output from the acquisition unit 43 in a time series for each mass determined by the determination unit 42 until the processing is completed. Furthermore, the selection unit 44 selects the monitored mass received by the reception unit 41 from among the masses for which the number of particles has been measured, in descending order of the amount of change in the number of particles over time (S34). Furthermore, the selection unit 44 outputs the measured values ​​of the number of particles in a time series to the determination unit 45 for each selected mass.

[0167] Next, the determination unit 45 determines a calculation expression and a switching condition for determining the switching timing based on the temporal change in the number of particles of each selected mass ( S35 ).

[0168] Next, the output unit 46 outputs the determined calculation formula and switching condition to the substrate processing apparatus 20b (S36). Then, the support apparatus 40 ends the processing shown in this flowchart.

[0169] [Processing by the Substrate Processing Apparatus 20b]

[0170] The processing of the substrate processing apparatus 20b in this embodiment is the same as that of the substrate processing apparatus 20b except for the following points. Figure 12 Since the processing in the illustrated substrate processing apparatus 20 a is the same, illustration thereof is omitted.

[0171] In step S22, the calculation unit 280 instructs the measuring device 30b to measure the number of particles for each mass included in the calculation formula. Then, the calculation unit 280 obtains the measured value of the number of particles for each mass from the measuring device 30b.

[0172] In step S23 , the calculation unit 280 calculates the value E of the calculation formula based on the measured value of the number of particles measured for each mass.

[0173] The second embodiment has been described above. As described above, in this embodiment, the property of the particles is the particle mass. Furthermore, the determination unit 42 refers to the database 400 to determine the mass of particles generated when processing a film of the type received by the receiving unit 41, as well as the mass of particles contained in the gas corresponding to the type received by the receiving unit 41. Furthermore, the acquisition unit 43 obtains a particle count measurement value from the measuring device 30b for each particle mass determined by the determination unit 42, as a measured value for the amount of particles contained in the gas within the substrate processing apparatus 20b. The selection unit 44 selects a predetermined number of particle masses from the particle masses in descending order of the change in particle count over time. The determination unit 45 determines the equation and switching conditions for determining the switching timing based on the change in particle count over time for each selected particle mass. The calculation unit 280 calculates the value E of the equation based on the particle count measured for each particle mass included in the equation. This makes it possible to determine the switching timing for processes that do not utilize plasma.

[0174] Furthermore, in the above-described embodiment, the receiving unit 41 also receives a monitoring mass representing the mass of the particles being monitored. The selecting unit 44 selects the monitoring mass received by the receiving unit 41 from among the measured mass quantities of the particles in descending order of the change in the number of particles over time. This reduces the processing load on the assisting device 40.

[0175] [other]

[0176] In addition, the technology disclosed in the present application is not limited to the above-described embodiment, and various modifications can be made within the scope of the gist of the technology.

[0177] For example, when a substrate W is processed based on a process including a process using plasma and a process not using plasma, the first embodiment and the second embodiment may be combined. For example, in the process, the calculation formula and switching conditions determined in the first embodiment are used in the process using plasma, while the calculation formula and switching conditions determined in the second embodiment are used in the process not using plasma.

[0178] Furthermore, the substrate processing system 1 of the second embodiment can also be used in processes using plasma. Thus, even if the window member 21w is obscured by reaction byproducts generated in the chamber 21 during plasma processing, the process switching timing can be determined with high accuracy.

[0179] Furthermore, in each of the above-described embodiments, the receiving unit 41 receives the monitoring quantity from the user of the substrate processing system 1 . However, the present invention is not limited to the disclosed technology, and the monitoring quantity may be a fixed value.

[0180] In each of the above-described embodiments, the determination unit 42 refers to the database 400 to determine the wavelength of light and the mass of particles corresponding to the types of film and gas received by the receiving unit 41. However, the disclosed technology is not limited to this. The receiving unit 41 may also receive the wavelength of light and the mass of particles corresponding to the film to be processed or the gas used in the process from a user and output them to the acquisition unit 43. Alternatively, the determination unit 42 may determine the wavelength of light and the mass of particles corresponding to the film to be processed or the gas used in the process based on actual measured values ​​without referring to the database 400.

[0181] Furthermore, in each of the aforementioned embodiments, the indicator unit 281 of the substrate processing apparatus 20a or 20b uses the switching conditions determined by the determination unit 45 of the auxiliary apparatus 40 to determine the timing of process switching. However, the disclosed technology is not limited to this. For example, the auxiliary apparatus 40 may present time-series data of the value E of the calculation formula determined by the determination unit 45 and the switching conditions determined by the determination unit 45 to a user of the substrate processing system 1 via a display device connected to the auxiliary apparatus 40. In this case, the auxiliary apparatus 40 may accept fine-tuning of the switching conditions by the user of the substrate processing system 1 via an input device connected to the auxiliary apparatus 40 and output the fine-tuned switching conditions along with the calculation formula to the substrate processing apparatus 20a or 20b.

[0182] In the above embodiment, a substrate processing system 1 is described in which a capacitively coupled plasma (CCP) is used as an example of a plasma source for processing. However, the plasma source is not limited thereto. Examples of plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon excited plasma (HWP).

[0183] Furthermore, the embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive. In practice, the embodiments described above can be implemented in a variety of ways. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and their subject matter.

Claims

1. A substrate processing system comprising: A substrate processing apparatus that processes a substrate based on a recipe describing processing conditions for each of a plurality of processes; and a switching timing production assisting device for assisting in producing the switching timing of the processing performed on the substrate; in, The switching timing production auxiliary device comprises: an acquisition unit, wherein the substrate processing apparatus performs processing on the substrate based on the process, the acquisition unit acquires a measured value of the amount of the particles from a measuring device that measures the amount of particles, including atoms and molecules, contained in the gas within the substrate processing apparatus for each property of the particles during execution of the processing; a selecting unit configured to select a predetermined number of properties of the particles from among the properties of the particles in descending order of the amount of change of the particles over time; a determination unit that determines a calculation expression and a switching condition for determining the switching timing based on a temporal change in the amount of the particles for each property of the selected particles; as well as an output unit that outputs the calculation expression and the switching condition to the substrate processing apparatus, Furthermore, the substrate processing apparatus comprises: an execution unit configured to execute processing on the substrate based on the process; a calculation unit that calculates a value of the calculation expression based on the amount of the particle measured by the measuring device for each property of the particle included in the calculation expression; as well as The instructing unit instructs the executing unit to switch the processing condition when the value of the arithmetic expression satisfies the switching condition.

2. The substrate processing system according to claim 1, wherein: The switching timing production auxiliary device comprises: a receiving portion that receives the type of film to be processed and the type of gas used in the process; and a determination unit that refers to a database storing types of particles generated in processing using the film or gas in correspondence with types of the film or gas, and determines properties of particles contained in the gas within the substrate processing apparatus when the film of the type received by the receiving unit is processed, and properties of the particles contained in the gas corresponding to the type received by the receiving unit, The acquisition unit acquires, from the measuring device, a measured value of an amount of the particles contained in the gas in the substrate processing apparatus for each property of the particles specified by the specifying unit.

3. The substrate processing system according to claim 2, wherein: The execution unit of the substrate processing apparatus executes etching using plasma as a process on the substrate. The film to be processed is a film to be etched. The gas used in the process is an etching gas.

4. The substrate processing system according to claim 2 or 3, characterized in that: The property of the particle is the wavelength of light observed by the emission of light by the particle, The determination unit refers to a database to determine the wavelength of light observed by the emission of the particles generated when the film of the type received by the receiving unit is processed, and the wavelength of light observed by the emission of the particles contained in the gas corresponding to the type received by the receiving unit. The acquiring unit acquires, from the measuring device, a measurement value of the luminescence intensity observed by the luminescence of the particles for each wavelength of the light determined by the determining unit, as a measurement value of the amount of the particles contained in the gas within the substrate processing apparatus. The selection unit selects a predetermined number of wavelengths from among the wavelengths whose luminous intensity is measured in descending order of the amount of change in luminous intensity over time, The determination unit determines the calculation expression and the switching condition for determining the switching timing based on the temporal change of the emission intensity of each of the selected wavelengths. The calculation unit calculates a value of the calculation expression based on the emission intensity measured for each of the wavelengths included in the calculation expression.

5. The substrate processing system according to claim 4, wherein: The receiving unit further receives a monitoring quantity indicating the number of wavelengths of light observed by the emission of the particle to be monitored. The selection unit selects the monitored number of wavelengths received by the reception unit in descending order of the amount of change in the luminous intensity over time from among the wavelengths whose luminous intensity has been measured.

6. The substrate processing system according to claim 2 or 3, characterized in that: The property of the particle is the mass of the particle, The determination unit refers to a database to determine the mass of the particles generated when the film of the type received by the receiving unit is processed, and the mass of the particles contained in the gas corresponding to the type received by the receiving unit. The acquiring unit acquires a measured value of the number of the particles from the measuring device for each mass of the particles determined by the determining unit as a measured value of the amount of the particles contained in the gas in the substrate processing apparatus. The selecting unit selects a predetermined number of the masses of the particles from among the masses of the particles in descending order of the amount of change in the number of the particles over time, The determination unit determines the calculation expression and the switching condition for determining the switching timing based on a temporal change in the number of the particles for each mass of the selected particles. The calculation unit calculates a value of the calculation expression based on the number of the particles measured for each mass of the particles included in the calculation expression.

7. The substrate processing system according to claim 5, wherein: The receiving unit further receives a monitoring quantity, the monitoring quantity indicating the mass of the particle to be monitored. The selection unit selects the masses of the monitored number of particles received by the receiving unit in descending order of temporal change among the masses of the measured number of particles.

8. A switching timing production auxiliary device, comprising: an acquisition unit, wherein a substrate processing apparatus executes a process on a substrate based on a recipe describing process conditions for each of a plurality of processes, the acquisition unit acquiring a measured value of the amount of particles from a measuring device that measures the amount of particles, including atoms and molecules, contained in the gas within the substrate processing apparatus for each property of the particles during execution of the process; a selecting unit configured to select a predetermined number of properties of the particles from among the properties of the particles in descending order of the amount of change of the particles over time; a determination unit that determines a calculation expression and a switching condition for determining a switching timing of the process based on a change over time in the amount of the particles for each property of the selected particles; and An output unit outputs the calculation expression and the switching condition to the substrate processing apparatus.

9. The switching timing production auxiliary device according to claim 8, characterized in that: Also features: a receiving portion that receives the type of film to be processed and the type of gas used in the process; and a determination unit that refers to a database storing types of particles generated in processing using the film or gas in correspondence with types of the film or gas, and determines properties of particles contained in the gas within the substrate processing apparatus when the film of the type received by the receiving unit is processed, and properties of the particles contained in the gas corresponding to the type received by the receiving unit, The acquisition unit acquires, from the measuring device, a measured value of an amount of the particles contained in the gas in the substrate processing apparatus for each property of the particles specified by the specifying unit.

10. The switching timing production auxiliary device according to claim 9, characterized in that: The substrate processing apparatus performs etching using plasma as a process for processing the substrate. The film to be processed is a film to be etched. The gas used in the process is an etching gas.

11. The switching timing production auxiliary device according to claim 9 or 10, characterized in that: The property of the particle is the wavelength of light observed by the emission of light by the particle, The determination unit refers to a database to determine the wavelength of light observed by the emission of the particles generated when the film of the type received by the receiving unit is processed, and the wavelength of light observed by the emission of the particles contained in the gas corresponding to the type received by the receiving unit. The acquiring unit acquires, from the measuring device, a measurement value of the luminescence intensity observed by the luminescence of the particles for each wavelength of the light determined by the determining unit, as a measurement value of the amount of the particles contained in the gas within the substrate processing apparatus. The selection unit selects a predetermined number of wavelengths from among the wavelengths whose luminous intensity is measured in descending order of the amount of change in luminous intensity over time, The determination unit determines the calculation expression and the switching condition for determining the switching timing based on the temporal change in the emission intensity of each of the selected wavelengths.

12. The switching timing production auxiliary device according to claim 9 or 10, characterized in that: The property of the particle is the mass of the particle, The determination unit refers to a database to determine the mass of the particles generated when the film of the type received by the receiving unit is processed, and the mass of the particles contained in the gas corresponding to the type received by the receiving unit. The acquiring unit acquires a measured value of the number of the particles from the measuring device for each mass of the particles determined by the determining unit as a measured value of the amount of the particles contained in the gas in the substrate processing apparatus. The selecting unit selects a predetermined number of the masses of the particles from among the masses of the particles in descending order of the amount of change in the number of the particles over time, The determination unit determines the calculation expression and the switching condition for determining the switching timing based on a temporal change in the number of the particles for each mass of the selected particles.

13. A switching timing production auxiliary method, comprising the following steps: an acquiring step in which a substrate processing apparatus performs a process on a substrate based on a recipe describing process conditions for each of a plurality of processes, and acquiring a measured value of the amount of particles from a measuring device that measures the amount of particles, including atoms and molecules, contained in the gas within the substrate processing apparatus for each property of the particles during execution of the process; a selecting step of selecting a predetermined number of properties of the particles from among the properties of the particles in descending order of the amount of change of the particles over time; a determining step of determining a calculation expression and a switching condition for determining a switching timing of the process based on a change over time in the amount of the particles for each property of the selected particles; as well as The output step is to output the calculation expression and the switching condition to the substrate processing apparatus.

14. The switching timing production assisting method according to claim 13, characterized in that: The following steps are also included: an accepting step of accepting the type of film to be processed and the type of gas used in the process; as well as a determining step of determining, with reference to a database storing types of particles generated in processing using the film or gas in correspondence with types of the film or gas, properties of particles contained in the gas within the substrate processing apparatus when the film of the type received in the receiving step is processed, and properties of the particles contained in the gas corresponding to the type received in the receiving step; In the acquisition step, for each property of the particles determined in the determination step, a measured value of the amount of the particles contained in the gas in the substrate processing apparatus is acquired from the measuring device.

15. The switching timing production assisting method according to claim 14, characterized in that: The substrate processing apparatus performs etching using plasma as a process for processing the substrate. The film to be processed is a film to be etched. The gas used in the process is an etching gas.

16. The switching timing production assisting method according to claim 14 or 15, characterized in that: The property of the particle is the wavelength of light observed by the emission of light by the particle, In the determining step, a wavelength of light observed by luminescence of the particles generated when the film of the type received in the receiving step is processed and a wavelength of light observed by luminescence of the particles contained in the gas corresponding to the type received in the receiving step are determined by referring to a database, In the acquiring step, for each wavelength of light observed by the light emission of the particles determined in the determining step, a measured value of the light emission intensity observed by the light emission of the particles is acquired from the measuring device as a measured value of the amount of the particles contained in the gas within the substrate processing apparatus. In the selection step, a predetermined number of wavelengths are selected from the wavelengths whose luminous intensity is measured in descending order of the amount of change in luminous intensity over time, In the determination step, the calculation expression and the switching condition for determining the switching timing are determined based on the temporal change in the emission intensity of each of the selected wavelengths.

17. The switching timing production assisting method according to claim 14 or 15, characterized in that: The property of the particle is the mass of the particle, In the determining step, a database is referenced to determine the mass of the particles generated when the film of the type received in the receiving step is processed, and the mass of the particles contained in the gas corresponding to the type received in the receiving step. In the acquiring step, for each mass of the particles determined in the determining step, a measured value of the number of the particles is acquired from the measuring device as a measured value of the amount of the particles contained in the gas in the substrate processing apparatus. In the selecting step, a predetermined number of the masses of the particles are selected from the masses of the particles in descending order of the amount of change of the number of the particles over time, In the determination step, the calculation expression and the switching condition for determining the switching timing are determined based on a temporal change in the number of the particles for each mass of the selected particles.

18. A substrate processing apparatus for performing processing on a substrate based on a recipe describing processing conditions for each of a plurality of processes, the substrate processing apparatus comprising: an execution unit configured to execute processing on the substrate based on the process; a calculation unit that calculates a value of the calculation expression received from the switching timing preparation supporting device based on the amount of the particles measured by the measuring device for each property of the particles included in the calculation expression; and an instruction unit for instructing the execution unit to switch the processing condition when the value of the operation expression satisfies the switching condition, in, Regarding the operation expression and the switching condition, a switching timing production auxiliary device obtains a measured value of the amount of the particles from a measuring device that measures the amount of the particles, including atoms and molecules, contained in the gas within the substrate processing device for each property of the particles during the period when the execution unit performs processing on the substrate based on the process. The switching timing production auxiliary device selects a predetermined number of properties of the particles from the properties of the particles in order of the amount of change of the particles over time from large to small. The switching timing production auxiliary device determines an operation expression and switching condition for determining the switching timing of the processing performed on the substrate based on the change of the amount of the particles over time for each property of the selected particles. The substrate processing device receives the determined operation expression and switching condition from the switching timing production auxiliary device.

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