Substrate support table, plasma processing system and mounting method of ring-shaped component

Abstract

The present invention provides a substrate support table, a plasma processing system, and a method for installing an annular component. The substrate support table includes: a substrate loading surface for loading a substrate; an annular component loading surface for loading an annular component arranged to surround a substrate held on the substrate loading surface; three or more lifting components configured to extend from the annular component loading surface and to be raised and lowered in an adjustable manner as to the amount of extension from the annular component loading surface; and a lifting mechanism for lifting the lifting components. A recessed portion formed by an upwardly recessed concave surface is provided at a position corresponding to each lifting component on the bottom surface of the annular component. When viewed from above, the recessed portion provides greater conveying accuracy for conveying the annular component above the annular component loading surface and is larger than an upper end portion of the lifting component. The upper end portion of the lifting component is formed into a hemispherical shape that gradually tapers upward. The concave surface forming the recessed portion has a smaller curvature than the convex surface forming the hemispherical shape of the upper end portion of the lifting component.

Description

Technical Field

[0001] The present invention relates to a substrate supporting table, a plasma processing system and a method for installing an annular component. Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus in which a substrate is placed within a processing chamber, a focus ring is arranged to surround the substrate, and plasma processing is performed on the substrate. The substrate processing apparatus includes: a stage having a substrate mounting surface for mounting the substrate and a focus ring mounting surface for mounting the focus ring; and a plurality of positioning pins. The positioning pins are needle-shaped and made of a material that expands radially upon heating. The positioning pins are mounted on the focus ring so as to extend from the lower surface of the focus ring and be inserted into positioning holes formed on the focus ring mounting surface of the stage. The pins expand radially upon heating and engage, thereby positioning the focus ring. The substrate processing apparatus disclosed in Patent Document 1 also includes lift pins and a transport arm. The lift pins are arranged on the stage so as to be able to extend and retract from the focus ring mounting surface, lifting the focus ring together with the positioning pins and removing it from the focus ring mounting surface. The transfer arm is provided outside the processing chamber and is used to replace the focus ring through a transfer port provided in the processing chamber, with positioning pins installed between the transfer arm and the lift pins.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2011-54933 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] The technology of the present invention is to position the ring-shaped member so as to be appropriately placed on the placement surface of the substrate support table on which the ring-shaped member is placed.

[0008] Technical solutions to technical problems

[0009] The cam is adapted to move the rollers upwards to move the rollers upwards so as to allow the rollers to move upwards and downwards relative to the rollers, and the rollers are adapted to move the rollers upwards and downwards relative to the rollers.

[0010] Effects of the Invention

[0011] According to the present invention, the annular member can be positioned so as to be appropriately placed on the placement surface of the substrate supporting table on which the annular member is placed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a plan view showing a schematic configuration of a plasma processing system according to a first embodiment.

[0013] Figure 2 Yes Figure 1 A longitudinal cross-sectional view of the schematic structure of the processing module.

[0014] Figure 3 yes Figure 2 A partial enlarged view of .

[0015] Figure 4 The circumferential direction of the wafer support table is Figure 2 Partial cross-sections of different parts.

[0016] Figure 5 FIG. 1 is a diagram schematically showing a state within a process module during an edge ring mounting process.

[0017] Figure 6 FIG. 1 is a diagram schematically showing a state within a process module during an edge ring mounting process.

[0018] Figure 7 FIG. 1 is a diagram schematically showing a state within a process module during an edge ring mounting process.

[0019] Figure 8 This is a diagram for explaining another example of lift pins.

[0020] Figure 9 This is a diagram for explaining another example of an electrostatic chuck.

[0021] Figure 10 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table serving as a substrate support table according to a second embodiment.

[0022] Figure 11 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table serving as a substrate support table according to a third embodiment.

[0023] Figure 12 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table serving as a substrate support table according to a fourth embodiment.

[0024] Figure 13 It is schematically represented Figure 12 A diagram of the state of the edge ring disassembly process within the process module.

[0025] Figure 14 It is schematically represented Figure 12 A diagram of the state of the edge ring disassembly process within the process module.

[0026] Figure 15 It is schematically represented Figure 12 A diagram of the state of the edge ring disassembly process within the process module.

[0027] Figure 16 It is schematically represented Figure 12 A diagram of the state of the edge ring disassembly process within the process module.

[0028] Figure 17 It is schematically represented Figure 12 A diagram of the state of the edge ring disassembly process within the process module.

[0029] Figure 18 It is schematically represented Figure 12 A diagram of the state of the edge ring disassembly process within the process module.

[0030] Figure 19 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table serving as a substrate support table according to a fifth embodiment.

[0031] Figure 20 It is a diagram showing a modified example of the edge ring and the cover ring.

[0032] Figure 21 It is a diagram showing another modified example of the edge ring and the cover ring.

[0033] Figure 22 This indicates the installation process of both the edge ring and the cover ring. Figure 19 FIG. 1 is a diagram showing the state of the surrounding area of ​​the wafer support table.

[0034] Figure 23 This indicates the installation process of both the edge ring and the cover ring. Figure 19 FIG. 1 is a diagram showing the state of the surrounding area of ​​the wafer support table.

[0035] Figure 24 This indicates the installation process of both the edge ring and the cover ring. Figure 19 FIG. 1 is a diagram showing the state of the surrounding area of ​​the wafer support table.

[0036] Figure 25 This indicates the removal process of a single edge ring. Figure 19 FIG. 1 is a diagram showing the state of the surrounding area of ​​the wafer support table.

[0037] Figure 26 This indicates the removal process of a single edge ring. Figure 19 FIG. 1 is a diagram showing the state of the surrounding area of ​​the wafer support table.

[0038] Figure 27 This indicates the removal process of a single edge ring. Figure 19 FIG. 1 is a diagram showing the state of the surrounding area of ​​the wafer support table.

[0039] Figure 28 This indicates the removal process of a single cover ring. Figure 19 FIG. 1 is a diagram showing the state of the surrounding area of ​​the wafer support table.

[0040] Description of Reference Numerals

[0041] 70 conveyor device

[0042] 71 conveyor arm

[0043] 101 Wafer support table

[0044] 104a upper surface

[0045] 104b upper surface

[0046] 107 lift pin

[0047] 107a convex

[0048] 114 lifting mechanism

[0049] 160 lifting pin

[0050] 161 upper end

[0051] 200 Wafer support table

[0052] 203a upper surface

[0053] 205 lift pin

[0054] 205a convex

[0055] 300 Wafer Support Table

[0056] 400 wafer support table

[0057] 402a upper surface

[0058] 403a upper surface

[0059] 405 lift pin

[0060] 405a convex

[0061] C Covering Ring

[0062] C1 recess

[0063] C1a concave

[0064] Ca-covered ring

[0065] Ca2 recess

[0066] Ca2a concave

[0067] F Edge Ring

[0068] F1 recess

[0069] F1a concave

[0070] Fa edge ring

[0071] W chip. DETAILED DESCRIPTION

[0072] In the manufacturing process of semiconductor devices, plasma processing such as etching and film formation is performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers") using plasma. Plasma processing is performed while the wafer is held on a substrate support table within a decompressible processing chamber.

[0073] Furthermore, during plasma processing, a ring-shaped component called an edge ring or focus ring is sometimes placed around the substrate on a substrate support table to achieve good and uniform processing results in the center and periphery of the substrate. When an edge ring is used, it is positioned with high precision to achieve uniform processing results around the periphery of the substrate. For example, Patent Document 1 describes positioning the edge ring using positioning pins that extend from the bottom surface of the edge ring and can be inserted into positioning holes formed in the edge ring mounting surface.

[0074] When an edge ring is worn out, it is typically replaced by an operator, but it is also conceivable to use a conveyor device for conveying the edge ring. For example, Patent Document 1 discloses edge ring replacement using lift pins that extend and retract from the edge ring mounting surface of a mounting table, lifting the edge ring to remove it from the mounting surface, and a conveyor arm that can transport both wafers and edge rings into and out of the processing chamber.

[0075] However, when replacing an edge ring using a conveyor, if the edge ring's conveying accuracy is poor, a portion of the edge ring may rest on the substrate mounting surface of the substrate support table, making it impossible to properly place the edge ring on the edge ring mounting surface. For example, if the difference between the edge ring's inner diameter and the diameter of the substrate mounting surface is smaller than the edge ring's conveying accuracy (conveyance error), and if the substrate mounting surface is positioned higher than the edge ring mounting surface, the inner side of the edge ring may hang over the substrate mounting surface, making it impossible to properly place the edge ring on the edge ring mounting surface.

[0076] Furthermore, during plasma processing, an annular member called a cover ring is sometimes disposed to cover the circumferential outer surface of an edge ring. In such cases, when a conveyor device is used to replace the cover ring, the cover ring may not be properly and accurately placed on the cover ring mounting surface.

[0077] Therefore, the technology of the present invention can position the ring-shaped member so as to be appropriately placed on the placement surface of the substrate supporting table on which the ring-shaped member is placed, regardless of the conveyance accuracy of the ring-shaped member.

[0078] Hereinafter, the substrate support table, plasma processing system, and edge ring replacement method of this embodiment will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, elements having substantially the same functional structure are denoted by the same reference numerals to omit repeated description.

[0079] (First embodiment)

[0080] Figure 1 It is a plan view showing a schematic configuration of a plasma processing system according to a first embodiment.

[0081] exist Figure 1 In the plasma processing system 1, plasma processing such as etching, film formation, and diffusion is performed on a wafer W as a substrate using plasma.

[0082] like Figure 1As shown, plasma processing system 1 includes an atmospheric section 10 and a decompression section 11, which are integrally connected via load lock modules 20 and 21. Atmospheric section 10 includes an atmospheric module for performing desired processing on wafers W under an atmospheric pressure atmosphere. Decompression section 11 includes a decompression module for performing desired processing on wafers W under a reduced pressure atmosphere.

[0083] The load lock modules 20 and 21 are provided to connect, via a gate (not shown), a loading module 30 (described later) of the atmospheric section 10 and a transfer module 50 (described later) of the decompression section 11. The load lock modules 20 and 21 are configured to temporarily hold wafers W. Furthermore, the load lock modules 20 and 21 are configured to be able to switch between an atmospheric pressure atmosphere and a decompression atmosphere (vacuum state).

[0084] The atmospheric section 10 includes a loading module 30 equipped with a conveyor device 40 (described later), and a loading end hoops 31a and 31b mounted thereon. Hoop 31a can store multiple wafers W, while hoop 31b can store multiple edge rings F. Furthermore, an orientation module (not shown) for adjusting the horizontal orientation of the wafers W and edge rings F, and a storage module (not shown) for storing multiple wafers W may be provided adjacent to the loading module 30.

[0085] The interior of the loading module 30 is formed of a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. A plurality of, for example, five, loading port ports 32 are arranged side by side on one side of the housing, forming a long side of the loading module 30. Load lock modules 20 and 21 are arranged side by side on the other side of the housing, forming a long side of the loading module 30.

[0086] A transport device 40 for transporting wafers W and edge rings F is provided within the loader module 30. The transport device 40 includes a transport arm 41 that supports and moves the wafers W and edge rings F; a rotary table 42 that rotatably supports the transport arm 41; and a base 43 on which the rotary table 42 is mounted. Furthermore, a guide rail 44 extending longitudinally of the loader module 30 is provided within the loader module 30. The base 43 is mounted on the guide rail 44, and the transport device 40 is configured to be movable along the guide rail 44.

[0087] The decompression unit 11 includes a transport module 50 for transporting wafers W and edge rings F, and a processing module 60, which is a plasma processing device that performs a desired plasma treatment on the wafers W transported from the transport module 50. The interiors of the transport module 50 and the processing module 60 are each maintained in a reduced pressure atmosphere. A plurality of processing modules 60, for example, eight, are provided for each transport module 50. The number and arrangement of the processing modules 60 are not limited to this embodiment and can be arbitrarily set, with at least one processing module, i.e., a plasma processing module, being provided for each edge ring F replacement.

[0088] The interior of the transfer module 50 is formed of a polygonal (pentagonal in the illustrated example) housing, and is connected to the load lock modules 20 and 21 as described above. The transfer module 50 transfers wafers W loaded into the load lock module 20 to one of the process modules 60, and then delivers wafers W, which have undergone a desired plasma treatment in the process module 60, to the atmosphere section 10 via the load lock module 21. Furthermore, the transfer module 50 transfers edge rings F loaded into the load lock module 20 to one of the process modules 60, and then delivers edge rings F to be replaced within the process module 60 to the atmosphere section 10 via the load lock module 21.

[0089] The processing module 60 uses plasma to perform plasma processing, such as etching, film formation, and diffusion, on the wafer W. A module that performs a desired plasma processing can be arbitrarily selected from the processing module 60. Furthermore, the processing module 60 is connected to the transport module 50 via a gate 61. The structure of the processing module 60 will be described later.

[0090] A conveyor device 70 for conveying wafers W and edge rings F is provided within the conveyor module 50. The conveyor device 70 includes a conveyor arm 71, which serves as a support member that supports and moves the wafers W and edge rings F; a rotary table 72 that rotatably supports the conveyor arm 71; and a base 73 on which the rotary table 72 is mounted. Furthermore, a guide rail 74 extending along the longitudinal direction of the conveyor module 50 is provided within the conveyor module 50. The base 73 is mounted on the guide rail 74, and the conveyor device 70 is configured to be movable along the guide rail 74.

[0091] In the transfer module 50, the wafer W and edge ring F held in the load lock module 20 are received by the transfer arm 71 and transported into the processing module 60. Furthermore, the wafer W and edge ring F held in the processing module 60 are received by the transfer arm 71 and transported out to the load lock module 21.

[0092] The plasma processing system 1 also includes a control device 80. In one embodiment, the control device 80 processes computer-executable commands that cause the plasma processing system 1 to perform the various steps described herein. The control device 80 may be configured to control various other components of the plasma processing system 1 to perform the various steps described herein. In one embodiment, a portion or all of the control device 80 may be included in other components of the plasma processing system 1. The control device 80 may also include, for example, a computer 90. The computer 90 may also include, for example, a processing unit (CPU: Central Processing Unit) 91, a storage unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control operations based on programs stored in the storage unit 92. The storage unit 92 may also include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 93 may communicate with other components of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0093] Next, wafer processing performed using plasma processing system 1 configured as described above will be described.

[0094] First, the wafer W is removed from the desired hoop 31a by the transport device 40 and transported into the load-lock module 20. Once the wafer W is in the load-lock module 20, the interior of the load-lock module 20 is sealed and depressurized. The interior of the load-lock module 20 is then connected to the interior of the transport module 50.

[0095] Next, the wafer W is held by the transfer device 70 and transferred from the load-lock module 20 to the transfer module 50 .

[0096] Next, the gate 61 is opened, and the wafer W is transferred to the desired process module 60 by the transfer device 70. Then, the gate 61 is closed, and the wafer W is subjected to the desired process in the process module 60. The process of the wafer W in the process module 60 will be described later.

[0097] Next, the gate 61 is opened, and the wafer W is carried out from the processing module 60 by the transfer device 70. Thereafter, the gate 61 is closed.

[0098] Next, the wafer W is loaded into the load lock module 21 by the transfer device 70. When the wafer W is loaded into the load lock module 21, the interior of the load lock module 21 is sealed and then opened to the atmosphere.

[0099] Next, the wafer W is held by the transport device 40 and returned from the load lock module 21 to the desired hoop 31a via the loader module 30 and stored therein. Thus, a series of wafer processing in the plasma processing system 1 is completed.

[0100] Furthermore, when replacing the edge ring, the edge ring is transported between the hoop 31 b and the desired process module 60 in the same manner as the wafer is transported between the hoop 31 a and the desired process module 60 during wafer processing.

[0101] Next, use Figures 2 to 4 , the processing module 60 is described. Figure 2 It is a longitudinal sectional view showing a schematic structure of the process module 60 . Figure 3 yes Figure 2 A partial enlarged view of . Figure 4 The circumferential direction of the wafer support table 101 described later is Figure 2 Partial cross-sections of different parts.

[0102] like Figure 2 As shown, the processing module 60 includes a plasma processing chamber 100 as a processing container, a gas supply unit 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. In addition, the processing module 60 also includes a gas supply unit 120 (see Figure 4 The processing module 60 further includes a wafer support table 101 serving as a substrate support table and an upper electrode shower head 102 .

[0103] Wafer support 101 is disposed in the lower region of plasma processing space 100s within depressurizable plasma processing chamber 100. Upper electrode showerhead 102 is disposed above wafer support 101 and functions as a portion of the ceiling of plasma processing chamber 100.

[0104] The wafer support table 101 is configured to support a wafer W in the plasma processing space 100s. In one embodiment, the wafer support table 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, lift pins 106, and lift pins 107 serving as lifting components. Although not shown, in one embodiment, the wafer support table 101 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 104 and the wafer W to a target temperature. The temperature adjustment module may include a heater, a flow path, or a combination thereof. A temperature adjustment fluid, such as a refrigerant or a heat transfer gas, may flow through the flow path.

[0105] The lower electrode 103 is formed of a conductive material such as aluminum. In one embodiment, the temperature adjustment module may also be provided on the lower electrode 103 .

[0106] Electrostatic chuck 104 is a component capable of holding both wafer W and edge ring F by electrostatic force, and is provided on lower electrode 103. The upper surface of the central portion of electrostatic chuck 104 is formed to be higher than the upper surface of the peripheral portion. Central upper surface 104a of electrostatic chuck 104 serves as the substrate mounting surface for wafer W, while peripheral upper surface 104b of electrostatic chuck 104 serves as the annular member mounting surface for edge ring F. Edge ring F is an annular member disposed so as to surround wafer W mounted on central upper surface 104a of electrostatic chuck 104.

[0107] Electrode 108 for sucking and holding wafer W is provided at the center of electrostatic chuck 104, and electrode 109 for sucking and holding edge ring F is provided at the periphery of electrostatic chuck 104. Electrodes 108 and 109 are sandwiched between insulating members made of insulating material.

[0108] A DC voltage from a DC power supply (not shown) is applied to the electrode 108. The electrostatic force generated thereby attracts and holds the wafer W on the upper surface 104a of the central portion of the electrostatic chuck 104. Similarly, a DC voltage from a DC power supply (not shown) is applied to the electrode 109. The electrostatic force generated thereby attracts and holds the edge ring F on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Figure 3 Shown is a bipolar type comprising a pair of electrodes 109a, 109b.

[0109] In this embodiment, the central portion of the electrostatic chuck 104 where the electrode 108 is provided and the peripheral portion where the electrode 109 is provided are integrated, but the central portion and the peripheral portion may be separate bodies.

[0110] In addition, in the present embodiment, the electrode 109 for attracting and holding the edge ring F is a bipolar type, but may also be a monopolar type.

[0111] In addition, the central portion of the electrostatic chuck 104 is formed to have a diameter smaller than that of the wafer W, for example. Figure 2 As shown, when the chip W is placed on the upper surface 104 a , the peripheral edge of the chip W extends from the central portion of the electrostatic chuck 104 .

[0112] Furthermore, edge ring F has a stepped portion formed on its upper portion, and the upper surface of the outer circumference is higher than the upper surface of the inner circumference. The inner circumference of edge ring F is formed so as to be able to penetrate under the peripheral edge of wafer W extending from the center of electrostatic chuck 104. In other words, the inner diameter of edge ring F is smaller than the outer diameter of wafer W.

[0113] Insulator 105 is a cylindrical member formed of ceramic or the like, and supports electrostatic chuck 104. Insulator 105 is formed, for example, to have an outer diameter equal to that of lower electrode 103, and supports the peripheral edge of lower electrode 103. Insulator 105 is disposed so that its inner peripheral surface is located radially outward of electrostatic chuck 104 relative to lifting mechanism 114, described later.

[0114] Lift pins 106 are columnar components, made of, for example, ceramic, that rise and fall by extending and retracting from upper surface 104a in the center of electrostatic chuck 104. Three or more lift pins 106 are provided at intervals along the circumference of electrostatic chuck 104, i.e., along upper surface 104a. Lift pins 106 are arranged, for example, at equal intervals along the circumference. Lift pins 106 extend in the vertical direction.

[0115] Lift pins 106 are connected to a lifting mechanism 110 that raises and lowers lift pins 106. Lift mechanism 110 includes, for example, a support member 111 that supports a plurality of lift pins 106, and a drive unit 112 that generates a driving force to raise and lower support member 111, thereby raising and lowering lift pins 106. Drive unit 112 includes a motor (not shown) that generates the driving force.

[0116] Lift pins 106 are inserted into through holes 113 extending downward from upper surface 104a in the center of electrostatic chuck 104 to the bottom surface of lower electrode 103. In other words, through holes 113 are formed to penetrate the center of electrostatic chuck 104 and lower electrode 103.

[0117] Lift pins 107 are columnar components that rise and fall by extending and retracting from upper surface 104b of the peripheral portion of electrostatic chuck 104. They are made of, for example, alumina, quartz, or SUS. Three or more lift pins 107 are provided at intervals along the circumference of electrostatic chuck 104, i.e., along central upper surface 104a and peripheral upper surface 104b. Lift pins 107 are arranged, for example, at equal intervals along the circumference. Lift pins 107 extend in the vertical direction.

[0118] The thickness of the lift pin 107 is, for example, 1 to 3 mm.

[0119] The lift pins 107 are connected to a lift mechanism 114 that drives the lift pins 107. The lift mechanism 114 is provided, for example, for each lift pin 107 and includes a support member 115 that supports the lift pin 107 so that it can move horizontally. The support member 115 includes, for example, a thrust bearing to support the lift pin 107 so that it can move horizontally. Furthermore, the lift mechanism 114 includes a drive unit 116 that generates a driving force to raise and lower the support member 111, thereby raising and lowering the lift pins 107. The drive unit 116 includes a motor (not shown) that generates this driving force.

[0120] Lift pins 107 are inserted into through holes 117 extending downward from upper surface 104b of the peripheral portion of electrostatic chuck 104 to the bottom surface of lower electrode 103. In other words, through holes 117 are formed to penetrate the peripheral portion of electrostatic chuck 104 and lower electrode 103.

[0121] The through hole 117 is formed with a positional accuracy that is at least higher than the conveyance accuracy of the edge ring by the conveyance device 70 .

[0122] The lift pins 107 are formed, for example, in a cylindrical shape except for the upper end, which is formed into a hemispherical shape that gradually tapers upward. The upper end of the lift pins 107 abuts against the bottom surface of the edge ring F when it is raised, thereby supporting the edge ring F. At positions corresponding to the respective lift pins 107 on the bottom surface of the edge ring F, there are provided Figure 3 The recess F1 shown is formed by a concave surface F1a recessed upward.

[0123] In a plan view, the size D1 of (the opening diameter of) the recess F1 of the edge ring F is greater than the transport accuracy (error) (±X μm) of the edge ring F transported by the transport device 70 toward the upper surface 104b of the electrostatic chuck 104, and is also greater than the size D2 of the upper end of the lift pin 107. For example, D1 satisfies the relationships D1>D2 and D1>2X, and is approximately 0.5 mm. In another example, D1 may be 0.5 to 3 mm.

[0124] Furthermore, when the upper end portion of lift pin 107 is formed into a hemispherical shape that tapers upward as described above, the concave surface F1a of recess F1 forming edge ring F is set to have a smaller curvature than the convex surface (i.e., upper end surface) 107a of the upper end portion of lift pin 107, which forms the hemispherical shape. In other words, the concave surface F1a has a larger curvature radius than the convex surface 107a.

[0125] When the thickness of the outer peripheral portion of the edge ring F is 3 to 5 mm, the depth of the recess F1 is set to, for example, 0.5 to 1 mm.

[0126] In addition, as the material of the edge ring F, for example, Si and SiC are used.

[0127] In addition, if Figure 4 As shown, a heat transfer gas supply passage 118 is formed on the upper surface 104b of the peripheral portion of the electrostatic suction cup 104. The heat transfer gas supply passage 118 supplies a heat transfer gas such as helium to the back surface of the edge ring F placed on the upper surface 104b. The heat transfer gas supply passage 118 is provided in a manner so as to be fluidically connected to the upper surface 104b. In addition, the side of the heat transfer gas supply passage 118 opposite to the upper surface 104b is fluidically connected to the gas supply unit 120. The gas supply unit 120 may also include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured to be capable of supplying the heat transfer gas supply passage from the gas source 121 via the flow controller 122. Each flow controller 122 may also include, for example, a mass flow controller or a pressure-controlled flow controller.

[0128] Although not shown in the figure, heat transfer gas is also supplied to the back surface of the wafer W placed on the upper surface 104 a in the center of the electrostatic chuck 104 , thereby forming a structure similar to that of the heat transfer gas supply path 118 .

[0129] Furthermore, an air suction passage may be formed to vacuum-suction edge ring F placed on upper surface 104b of the peripheral portion of electrostatic chuck 104. The air suction passage may be provided on electrostatic chuck 104, for example, so as to be in fluid communication with upper surface 104b. The heat transfer gas supply passage and the air suction passage may all or partly be shared.

[0130] return Figure 2 Description. The upper electrode shower head 102 is configured to be able to supply one or more process gases from the gas supply part 130 to the plasma processing space 100s. In one embodiment, the upper electrode shower head 102 has a gas inlet 102a, a gas diffusion chamber 102b and a plurality of gas outlets 102c. The gas inlet 102a is, for example, fluidically connected to the gas supply part 130 and the gas diffusion chamber 102b. The plurality of gas outlets 102c are fluidically connected to the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode shower head 102 is configured to be able to supply one or more process gases from the gas inlet 102a via the gas diffusion chamber 102b and the plurality of gas outlets 102c to the plasma processing space 100s.

[0131] The gas supply unit 130 may also include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to supply one or more process gases from corresponding gas sources 131 via corresponding flow controllers 132 to the gas inlet 102a. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130 may include one or more flow modulation devices for modulating or pulsing the flow of one or more process gases.

[0132] The RF power supply unit 140 is configured to supply RF power, such as one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode showerhead 102, or both the lower electrode 103 and the upper electrode showerhead 102. This generates plasma from one or more process gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least a portion of a plasma generation unit that generates plasma from one or more process gases in the plasma processing chamber. The RF power supply unit 140 includes, for example, two RF generation units 141a and 141b and two matching circuits 142a and 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generation unit 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal can have a frequency in the range of 27 MHz to 100 MHz.

[0133] In one embodiment, the RF power supply unit 140 is configured to supply a second RF signal from a second RF generator 141b to the lower electrode 103 via a second matching circuit 142b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (direct current) pulse generator may be used in place of the second RF generator 141b.

[0134] Although not shown in the figure, another embodiment is contemplated in the present invention. For example, in an alternative embodiment, the RF power supply unit 140 may be configured to supply a first RF signal from an RF generator to the lower electrode 103, a second RF signal from another RF generator to the lower electrode 103, and a third RF signal from yet another RF generator to the lower electrode 103. Furthermore, in another alternative embodiment, a DC voltage may be applied to the upper electrode showerhead 102.

[0135] Additionally, in various embodiments, the amplitude of one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may also include pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.

[0136] The exhaust system 150 can be connected to an exhaust port 100e disposed at the bottom of the plasma processing chamber 100. The exhaust system 150 can include a pressure valve and a vacuum pump. The vacuum pump can also include a turbomolecular pump, a roughing pump, or a combination thereof.

[0137] Next, an example of wafer processing performed using the processing module 60 having the above configuration will be described. In the processing module 60, the wafer W is subjected to processing such as etching, film formation, and diffusion.

[0138] First, a wafer W is introduced into plasma processing chamber 100, and wafer W is placed on electrostatic chuck 104 by raising and lowering lift pins 106. A DC voltage is then applied to electrode 108 of electrostatic chuck 104, thereby electrostatically attracting wafer W and holding it on electrostatic chuck 104. After wafer W is introduced, exhaust system 150 is used to reduce the pressure inside plasma processing chamber 100 to a predetermined vacuum level.

[0139] Next, the processing gas is supplied from the gas supply unit 130 via the upper electrode showerhead 102 into the plasma processing space 100s. Furthermore, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103, thereby exciting the processing gas and generating plasma. At this time, high-frequency power LF for ion introduction may also be supplied from the RF power supply unit 140. The generated plasma then causes plasma processing on the wafer W.

[0140] During plasma processing, a heat transfer gas such as He gas or Ar gas is supplied to the wafer W held by attraction on the electrostatic chuck 104 and the bottom surface of the edge ring F through the heat transfer gas supply passage 118 or the like.

[0141] When plasma processing is completed, the supply of heat transfer gas to the bottom surface of wafer W may be stopped. Furthermore, the supply of high-frequency power HF from RF power supply unit 140 and the supply of processing gas from gas supply unit 130 are stopped. If high-frequency power LF was being supplied during plasma processing, the supply of this high-frequency power LF is also stopped. Next, the electrostatic chuck 104 stops attracting and holding wafer W.

[0142] Then, the wafer W is raised by lift pins 106 and detached from electrostatic chuck 104. During this detachment, static removal of the wafer W may also be performed. The wafer W is then unloaded from plasma processing chamber 100, completing a series of wafer processing operations.

[0143] Furthermore, edge ring F is attracted and held by electrostatic force during wafer processing. Specifically, it is attracted and held by electrostatic force both during and before plasma processing. Before and after plasma processing, different voltages are applied to electrodes 109a and 109b to generate a potential difference between electrodes 109a and 109b. The electrostatic force generated in response to this potential difference attracts and holds edge ring F. In contrast, during plasma processing, the same voltage (e.g., a positive voltage) is applied to electrodes 109a and 109b. The plasma generates a potential difference between edge ring F, which is set to ground potential, and electrodes 109a and 109b. The electrostatic force generated in response to this potential difference attracts and holds edge ring F. Furthermore, while edge ring F is attracted by electrostatic force, lift pins 107 are sunken into upper surface 104b of the peripheral portion of electrostatic chuck 104.

[0144] As described above, the edge ring F is attracted and held by electrostatic force. Therefore, when the heat transfer gas starts to be supplied to the bottom surface of the edge ring F, there is no positional deviation between the edge ring F and the electrostatic chuck 104 .

[0145] Next, use Figures 5 to 7 An example of a process of mounting the edge ring F into the processing module 60 using the plasma processing system 1 described above will be described. Figures 5 to 7 1 is a diagram schematically showing the state inside the process module 60 during the mounting process. The following process is performed under the control of the control device 80. The following process is performed, for example, when the electrostatic chuck 104 is at room temperature.

[0146] First, the transfer arm 71 holding the edge ring F is inserted from the vacuum atmosphere transfer module 50 of the plasma processing system 1 through the inlet and outlet (not shown) into the decompressed plasma processing chamber 100 of the processing module 60 to which the edge ring F is to be mounted. Figure 5 As shown, edge ring F held by transfer arm 71 is transferred above upper surface 104 b of the peripheral portion of electrostatic chuck 104 . Furthermore, edge ring F is held by transfer arm 71 while its circumferential orientation is adjusted.

[0147] Next, all the lifting pins 107 are raised, as shown in FIG. Figure 6As shown, the edge ring F is transferred from the conveying arm 71 to the lifting pins 107. Specifically, all the lifting pins 107 are raised, and first, the upper ends of the lifting pins 107 abut against the bottom surface of the edge ring F held by the conveying arm 71. At this time, the upper ends of the lifting pins 107 are received in the recesses F1 provided on the bottom surface of the edge ring F. This is because, as described above, the recesses F1 are provided at positions corresponding to the respective lifting pins 107 on the bottom surface of the edge ring F, and when viewed from above, the size of the recesses F1 is greater than the conveying accuracy of the edge ring F conveyed by the conveying device 70, and is larger than the size of the upper ends of the lifting pins 107. When the lifting pins 107 continue to rise even after the upper ends of the lifting pins 107 abut against the bottom surface of the edge ring F, as shown in FIG. Figure 6 As shown, the edge ring F is connected to and supported by the lift pins 107.

[0148] As described above, the concave surface F1a forming the concave portion F1 of the edge ring F is set to have a smaller curvature than the hemispherical convex surface 107a of the upper end of the lift pin 107. Therefore, even if the edge ring F is misaligned relative to the lift pin 107 immediately after being transferred to the lift pin 107, it moves as described below and is positioned relative to the lift pin 107. Specifically, the edge ring F moves relative to the lift pin 107 by sliding the top of the upper end of the edge ring F on the concave surface F1a. The edge ring F then stops when the center of the concave portion F1 aligns with the center of the upper end of the lift pin 107 when viewed from above—that is, when the deepest portion of the concave portion F1 aligns with the top of the upper end of the lift pin 107 when viewed from above—and is positioned relative to the lift pin 107 at that position.

[0149] Furthermore, to facilitate the movement of the edge ring F for the positioning after it is delivered to the lift pins 107, each lift pin 107 may be moved up and down slightly, or each lift pin 107 may be lowered at a different speed or at a high speed.

[0150] After the edge ring F is positioned relative to the lift pins 107, the transfer arm 71 is withdrawn from the plasma processing chamber 100 and the lift pins 107 are lowered. Figure 7 As shown, the edge ring F is placed on the upper surface 104 a of the peripheral portion of the electrostatic chuck 104 .

[0151] The edge ring F is positioned relative to the lift pin 107 as described above, and the through hole 117 and the lift pin 107 are set with high precision relative to the center of the electrostatic suction cup 104. Therefore, the edge ring F is placed on the above-mentioned upper surface 104a while being positioned relative to the center of the electrostatic suction cup 104.

[0152] Furthermore, lift pins 107 are lowered until, for example, upper end surfaces of lift pins 107 sink into upper surface 104 a of the peripheral portion of electrostatic chuck 104 .

[0153] Next, a DC voltage from a DC power supply (not shown) is applied to electrode 109 provided on the periphery of electrostatic chuck 104. The electrostatic force generated thereby attracts and holds edge ring F to upper surface 104b. Specifically, different voltages are applied to electrode 109a and electrode 109b. The electrostatic force generated thereby corresponds to the potential difference, thereby attracting and holding edge ring F to upper surface 104b.

[0154] Thus, a series of edge ring F mounting processes are completed.

[0155] Furthermore, if the aforementioned air intake passage is provided, after edge ring F is placed on upper surface 104b and before being held by electrostatic attraction, the air intake passage may be used to vacuum-adsorb the edge ring to upper surface 104b. After switching from vacuum attraction using the air intake passage to holding by electrostatic attraction, the air intake passage's vacuum level may be measured, and based on the measurement result, a decision may be made as to whether edge ring F should be re-placed on upper surface 104b.

[0156] The removal process of the edge ring F is performed in the reverse order of the above-mentioned installation process of the edge ring F.

[0157] In addition, when removing the edge ring F, the edge ring F may be removed from the plasma processing chamber 100 after being cleaned.

[0158] As described above, the wafer support table 101 of this embodiment includes: an upper surface 104a on which a wafer W is mounted; an upper surface 104b on which an edge ring F is mounted so as to surround the wafer W held on the upper surface; three or more lift pins 107 that are raised and lowered so as to extend and retract from the upper surface 104b; and a lift mechanism 114 that raises and lowers the lift pins 107. Furthermore, recesses F1 formed by upwardly recessed concave surfaces F1a are provided on the bottom surface of the edge ring F at positions corresponding to the respective lift pins 107. Furthermore, when viewed from above, the size of the recesses F1 is configured to be larger than the transport error of the edge ring F above the upper surface 104b and larger than the size of the upper ends of the lift pins 107. Therefore, when the lift pins 107 are raised and contact the bottom surface of the edge ring F, the upper ends of the lift pins 107 can be retracted into the recesses F1 of the edge ring F. Furthermore, in this embodiment, the upper end of lift pin 107 is formed into a hemispherical shape that tapers upward. The concave surface F1a forming concave portion F1 has a smaller curvature than the convex surface forming the hemispherical shape at the upper end of lift pin 107. Therefore, when edge ring F is supported by lift pin 107, edge ring F can be positioned relative to lift pin 107 at a position where the deepest portion of concave portion F1 coincides with the top of the upper end of lift pin 107 when viewed from above. Consequently, when lift pin 107, which supports edge ring F, is lowered, lift pin 107 can be positioned relative to electrostatic chuck 104 and placed on upper surface 104b. In other words, according to this embodiment, edge ring F can be positioned relative to wafer support table 101 and placed thereon, regardless of the conveyance accuracy of edge ring F.

[0159] Furthermore, when the wafer support table 101 of this embodiment is installed in a plasma processing apparatus, the edge ring F can be replaced using the transport device 70 without the need for an operator. When an operator replaces the edge ring, the processing vessel in which the edge ring is located must be exposed to the atmosphere. However, when the wafer support table 101 of this embodiment is installed, the edge ring F can be replaced using the transport device 70, eliminating the need to expose the plasma processing chamber 100 to the atmosphere during replacement. Therefore, according to this embodiment, the time required for replacement can be significantly shortened. Furthermore, in this embodiment, three or more lift pins are provided, enabling not only radial alignment of the edge ring F (from the center of the wafer support table 101 toward the periphery) but also circumferential alignment of the edge ring F.

[0160] Furthermore, in this embodiment, a lifting mechanism 114 is provided for each lift pin 107, and a support member 115 is provided to support the lift pin 107 so that the lift pin 107 is horizontally movable. Therefore, when the electrostatic chuck 104 undergoes thermal expansion or contraction, the lift pin 107 can move horizontally in response to the thermal expansion or contraction. Consequently, the lift pin 107 is not damaged by thermal expansion or contraction of the electrostatic chuck 104.

[0161] Furthermore, in this embodiment, after edge ring F is placed, it is attracted and held by electrostatic force using electrode 109. Therefore, there is no need to provide protrusions or recesses, etc., on the bottom surface of edge ring F or the placement surface of edge ring F (top surface 104b of electrostatic chuck 104) to suppress positional deviation of edge ring F after placement. In particular, since the aforementioned protrusions are not required on top surface 104b of electrostatic chuck 104, the structure of electrostatic chuck 104 can be prevented from becoming complicated.

[0162] Furthermore, in this embodiment, there are no other components between the electrostatic chuck 104 of the wafer support table 101 and the edge ring F, and therefore, the accumulated tolerance is small.

[0163] Figure 8 This is a diagram for explaining another example of lift pins.

[0164] Figure 8 The lift pin 160 includes a columnar portion 162 and a connecting portion 163 in addition to a hemispherical upper end portion 161 .

[0165] The columnar portion 162 is formed in a columnar shape that is thicker than the upper end portion 161 . Specifically, for example, it is formed in a cylindrical shape that is thicker than the upper end portion 161 .

[0166] The connecting portion 163 connects the upper end portion 161 and the columnar portion 162. The connecting portion is formed into a frustum that tapers upward. Specifically, for example, the connecting portion is formed into a frustum with the lower end having the same diameter as the columnar portion 162 and the upper end having the same diameter as the upper end portion 161.

[0167] By using the lift pins 160 , the positioning accuracy of the edge ring F relative to the lift pins 160 can be further improved.

[0168] Furthermore, by using the above-described lift pins 107 , the recess F1 can be made shallower, and thus the edge ring F can be made thinner and lighter.

[0169] Figure 9 This is a diagram for explaining another example of an electrostatic chuck.

[0170] Figure 9Insulating guides 180 are provided in electrostatic chuck 170 in through-holes 117 through which lift pins 107 are inserted.

[0171] The guide 180 is a cylindrical member made of resin, for example, and is fitted into the through hole 117 .

[0172] In electrostatic chuck 170, lift pins 107 are inserted through guides 180 provided in through-holes 117. Guides 180 restrict the upward and downward movement of lift pins 107. This allows the upper ends of lift pins 107 to be positioned with greater precision relative to electrostatic chuck 170. Consequently, when lift pins 107, which are positioned and supporting edge ring F, are lowered and edge ring F is placed on top surface 104b of electrostatic chuck 170, edge ring F can be placed on top surface 104b while being positioned with greater precision relative to electrostatic chuck 170.

[0173] (Second embodiment)

[0174] Figure 10 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table 200 serving as a substrate support table according to the second embodiment.

[0175] In the first embodiment, the edge ring F is the object of replacement, but in this embodiment, the cover ring C is the object of replacement. The cover ring C is an annular member that covers the outer side surface of the edge ring F in the circumferential direction.

[0176] Figure 10 The wafer support table 200 includes a lower electrode 201, an electrostatic chuck 202, a support body 203, an insulator 204, and lift pins 205 as lifting members.

[0177] exist Figure 2 The lower electrode 103 and electrostatic chuck 104 shown in FIG. 1 have through-holes 117 extending therethrough, but the lower electrode 201 and electrostatic chuck 202 do not have through-holes 117. In this respect, the lower electrode 201 and electrostatic chuck 202 differ from the lower electrode 103 and electrostatic chuck 104.

[0178] The support body 203 is a member formed into an annular shape in plan view using, for example, quartz, and supports the lower electrode 103 and the cover ring C. The upper surface 203a of the support body 203 serves as an annular member placement surface for placing the cover ring C, which is an annular member to be replaced.

[0179] The insulator 204 is a cylindrical member formed of ceramic or the like, and supports the support body 203. The insulator 204 is formed to have an outer diameter equal to that of the support body 203, and supports the peripheral edge of the support body 203.

[0180] Figure 2 Lift pins 107, etc., are inserted through through-holes 117 provided to penetrate lower electrode 103 and electrostatic chuck 104. In contrast, lift pins 205 are inserted through through-holes 206, which vertically penetrate support body 203 from upper surface 203a. Lift pins 205 differ from lift pins 107 in this respect. Like lift pins 107, three or more lift pins 205 are provided at intervals along the circumference of electrostatic chuck 202.

[0181] Like lift pins 107, lift pins 205 have upper ends that taper upward in a hemispherical shape. When raised, the upper ends of lift pins 205 contact the bottom surface of cover ring C, supporting cover ring C. Concave portions C1, formed by upwardly recessed concave surfaces C1a, are provided on the bottom surface of cover ring C at locations corresponding to each lift pin 205.

[0182] The size of the recessed portion C1 of the cover ring C, in a plan view, is greater than the conveyance accuracy of the cover ring C by the conveyance device 70 and is larger than the size of the upper end portion of the lift pin 205 .

[0183] Furthermore, when the upper end of the lift pin 205 is formed into a hemispherical shape that gradually tapers upward as described above, the concave surface C1a forming the concave portion C1 of the cover ring C is set to have a smaller curvature than the hemispherical convex surface 205a of the upper end of the lift pin 205.

[0184] The mounting process and the removal process of the cover ring C are the same as those of the edge ring F in the first embodiment, and therefore description thereof will be omitted.

[0185] in addition, Figure 2 As shown in FIG, etc., lift pins 107 corresponding to edge ring F are configured to extend and retract from upper surface 104b of the peripheral portion of electrostatic chuck 104. Furthermore, when edge ring F is attracted by electrostatic force, the upper end surfaces of lift pins 107 retract from upper surface 104a of the peripheral portion of electrostatic chuck 104. In contrast, lift pins 205 corresponding to cover ring C can be configured to extend from and retract from upper surface 203a of support body 203, if the extension amount is adjustable. Furthermore, when edge ring F is attracted by electrostatic force, the upper end surfaces of lift pins 205 can extend from upper surface 203a of support body 203.

[0186] (Third embodiment)

[0187] Figure 11 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table 300 serving as a substrate support table according to the third embodiment.

[0188] In the first embodiment, the edge ring F is the target for replacement, and in the second embodiment, the cover ring C is the target for replacement. However, in this embodiment, both the edge ring F and the cover ring C are the targets for replacement.

[0189] In this embodiment, the edge ring F and cover ring C are replaced separately. Therefore, the edge ring F is provided with lift pins 107 and through-holes 117, while the cover ring C is provided with lift pins 205 and through-holes 206. Furthermore, the aforementioned recesses F1 and C1 are formed on the bottom surfaces of the edge ring F and the bottom surfaces of the cover ring C, respectively.

[0190] The mounting and removal processes of the edge ring F and the mounting and removal processes of the cover ring C in this embodiment are the same as those of the edge ring F in the first embodiment, and therefore description thereof is omitted.

[0191] (Fourth embodiment)

[0192] Figure 12 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table 400 serving as a substrate support table according to the fourth embodiment.

[0193] In the first embodiment, the edge ring F is replaced, in the second embodiment, the cover ring C is replaced, and in the third embodiment, both the edge ring F and the cover ring C are replaced. However, in this embodiment, the cover ring Ca supporting the edge ring Fa is replaced.

[0194] Figure 12 The wafer support table 400 includes a lower electrode 401, an electrostatic chuck 402, a support body 403, an insulator 404, and lift pins 405 serving as a lifting member.

[0195] Through holes 406 for inserting lift pins 405 are provided in lower electrode 401 and electrostatic chuck 402. Through holes 406 are formed to extend downward from upper surface 402a of the peripheral portion of electrostatic chuck 402 to reach the bottom surface of lower electrode 401.

[0196] The support body 403 is made of, for example, quartz and is formed into a ring shape in a plan view, and supports the lower electrode 401 .

[0197] The upper surface 403a of the support body 403 and the upper surface 402a of the peripheral portion of the electrostatic chuck 402 serve as an annular member mounting surfaces for mounting the cover ring Ca of the support edge ring Fa, which is an annular member to be replaced.

[0198] The insulator 404 is a cylindrical member formed of ceramic or the like, and supports the support 403. The insulator 404 is formed to have an outer diameter equal to that of the support 403, and supports the peripheral edge of the support 403.

[0199] In this embodiment, the edge ring Fa and Figure 2 Similarly, the edge ring F has a step formed on its upper portion, the upper surface of the outer peripheral portion is formed higher than the upper surface of the inner peripheral portion, and its inner diameter is formed smaller than the outer diameter of the wafer W. The edge ring Fa also has a recess Fa1 recessed radially inward on the outer peripheral portion of the bottom portion.

[0200] On the other hand, the cover ring Ca has a convex portion Ca1 projecting radially inward on its bottom portion. The cover ring Ca supports the edge ring Fa by engaging the convex portion Ca1 with the concave portion Fa1.

[0201] In addition, in order to prevent the positional deviation of the cover ring Ca and the edge ring Fa, a protrusion may be provided on one of them and a recessed portion engaging with the protrusion may be provided on the other. Figure 20 and Figure 21 Similar to the previously described cover ring Cb and edge ring Fb, a recessed portion is provided on either the upper surface of the inner periphery of the cover ring Ca or the lower surface of the outer periphery of the edge ring Fa, and a protrusion having a shape corresponding to the recessed portion is provided on the other. Alternatively, the cover ring Ca and edge ring Fa may be bonded or joined together using an adhesive or the like.

[0202] Lift pins 405 extend from and are embedded in positions corresponding to convex portions Ca1 of cover ring Ca on upper surface 402a of the peripheral portion of electrostatic chuck 402. Through holes 406 for inserting lift pins 405 are formed in positions corresponding to convex portions Ca1 of cover ring Ca.

[0203] Lifting pin 405 and Figure 2 Similarly, three or more lift pins 107 are provided at intervals along the circumferential direction of electrostatic chuck 402 .

[0204] Like lift pins 107, lift pins 405 have upper ends that taper upward in a hemispherical shape. When raised, the upper ends of lift pins 405 contact the bottom surface of the convex portion Ca1 of the cover ring Ca, supporting the cover ring C, which in turn supports the edge ring F. Concave portions Ca2, formed by upwardly recessed concave surfaces Ca2a, are provided on the bottom surface of the convex portion Ca1 of the cover ring C at positions corresponding to the respective lift pins 405.

[0205] The size of the recessed portion Ca2 is larger than the conveying accuracy of the cover ring C by the conveying device 70 and is larger than the size of the upper end portion of the lift pin 405 in a plan view.

[0206] When the upper end of the lift pin 405 is formed into a hemispherical shape that gradually tapers upward as described above, the concave surface Ca2a forming the concave portion Ca2 is set to have a smaller curvature than the hemispherical convex surface 405a of the upper end of the lift pin 405.

[0207] The mounting and removal processes of the cover ring Ca supporting the edge ring Fa are the same as those of the edge ring F in the first embodiment, and therefore description thereof is omitted.

[0208] According to this embodiment, the edge ring Fa and the cover ring Ca can be replaced at the same time, so the time required for the replacement can be further shortened. In addition, there is no need to set up a mechanism for raising and lowering the edge ring Fa and a mechanism for raising and lowering the cover ring Ca, so the cost can be reduced.

[0209] In addition, when using the wafer support table of this embodiment, it is also possible to remove only the edge ring Fa. Figures 13 to 18 , the disassembly process of the edge ring Fa is explained.

[0210] First, all the lift pins 405 are raised, and the cover ring C supporting the edge ring F is transferred from the upper surface 402a of the peripheral portion of the electrostatic chuck 402 and the upper surface 403a of the support body 403 (hereinafter referred to as the annular member mounting surface) to the lift pins 405. Then, the lift pins 405 continue to rise, as shown in FIG. Figure 13 As shown, the cover ring Ca supporting the edge ring Fa moves upward.

[0211] Next, the transport arm 71 holding the jig J is inserted from the transport module 50 of the vacuum atmosphere of the plasma processing system 1 through the transport port (not shown) into the decompressed plasma processing chamber 100. Figure 14 As shown, the jig J held by the transfer arm 71 is moved between the annular member mounting surface, the upper surface 403a of the support body 403, and the cover ring Ca supporting the edge ring Fa. The jig J is a disk-shaped member having approximately the same diameter as the wafer W, that is, a diameter larger than the inner diameter of the edge ring Fa.

[0212] Next, the lifting pin 106 is raised, as shown in FIG. Figure 15 As shown, the jig J is delivered from the transport arm 71 to the lift pins 106 .

[0213] Next, the transfer arm 71 is withdrawn from the plasma processing chamber 100, that is, evacuated, and then the lift pins 405 and the lift pins 106 are moved relatively. Specifically, only the lift pins 405 are lowered. Figure 16As shown, the edge ring Fa is delivered from the cover ring Ca to the jig J. Then, only the lift pins 405 are continuously lowered, whereby the cover ring Ca is delivered from the lift pins 405 to the annular member mounting surface.

[0214] Next, the transfer arm 71 is inserted into the plasma processing chamber 100 through the transfer port (not shown). Figure 17 As shown, the transport arm 71 is moved between the cover ring Ca and the jig J supporting the edge ring Fa.

[0215] Next, the lifting pin 106 is lowered, as shown in FIG. Figure 18 As shown, the jig J supporting the edge ring Fa is delivered from the lift pins 106 to the transport arm 71 .

[0216] Then, the transfer arm 71 is withdrawn from the plasma processing chamber 100 , and the jig J supporting the edge ring Fa is carried out of the plasma processing chamber 100 .

[0217] Thus, a series of disassembly processes of only the edge ring Fa is completed.

[0218] Note that the mounting process of only the edge ring Fa is performed in the reverse order of the above-described removal process of only the edge ring Fa.

[0219] (Fifth embodiment)

[0220] Figure 19 It is a partially enlarged cross-sectional view showing a schematic structure of a wafer support table 500 serving as a substrate support table according to the fifth embodiment.

[0221] In this embodiment, as in the third and fourth embodiments, both an edge ring and a cover ring are used. Furthermore, in this embodiment, as in the fourth embodiment, both the edge ring and the cover ring can be replaced simultaneously, or only the edge ring or only the cover ring can be replaced. However, in this embodiment, when only the edge ring is replaced, the jig used in the fourth embodiment is not required.

[0222] Figure 19 The wafer support table 500 includes a lower electrode 501, an electrostatic chuck 502, a support body 503, and lift pins 504 as an example of a lifting member.

[0223] Support body 503 and Figure 12 Similarly, the support body 403 of the example is formed into a ring-shaped member when viewed from above, such as quartz, to support the lower electrode 501. However, in Figure 12 In the example of FIG. 4 , the support body 403 is provided so as not to overlap with the lower electrode 401 in a plan view, but Figure 19 In the example of FIG. 5 , the support body 503 is provided so that the upper portion thereof protrudes toward the inner peripheral side and overlaps with the lower electrode 501 .

[0224] In addition, Figure 12 In the example of FIG. 4 , the through hole 406 for the lift pin 405 to be inserted is provided so as to penetrate the lower electrode 401 and the electrostatic chuck 402. Figure 19 In the example, the through hole 505 for the lift pin 504 to be inserted is set to penetrate the lower electrode 501, but does not penetrate the electrostatic chuck 502, but instead penetrates the inner peripheral portion of the upper portion of the support body 503. The through hole 505 is formed to extend downward from the upper surface 502a of the peripheral portion of the electrostatic chuck 502 to reach the bottom surface of the lower electrode 501. In addition, the through hole 505 can also be connected to the bottom surface of the lower electrode 501. Figure 12 Similarly to the example of , it is provided so as to penetrate the lower electrode 501 and the electrostatic chuck 502 .

[0225] The electrostatic chuck 502 can also be used with Figure 2 Similarly to the electrostatic chuck 104, an electrode 109 is provided for holding the edge ring Fb by electrostatic force. Specifically, the electrode 109 is connected to the Figure 12 Similarly to the electrostatic chuck 402, it is provided in the portion that overlaps with the edge ring Fb when viewed from above, that is, the portion that does not overlap with the cover ring Cb when viewed from above. Furthermore, the electrode 109 may be provided in the electrostatic chuck 502 or in a dielectric separate from the electrostatic chuck 502.

[0226] An upper surface 502 a of the peripheral portion of the electrostatic chuck 502 and an upper surface 503 a of the support body 503 serve as annular member mounting surfaces on which the edge ring Fb and the cover ring Cb are mounted.

[0227] In this embodiment, similar to the fourth embodiment, the cover ring Cb is configured to support the edge ring Fb and, when concentric with the edge ring Fb, at least partially overlaps with the edge ring Fb in a plan view. In one embodiment, the innermost diameter of the cover ring Cb is smaller than the outermost diameter of the edge ring Fb. When the cover ring Cb and edge ring Fb are arranged so as to overlap over their entire circumferences, the inner circumference of the cover ring Cb at least partially overlaps with the outer circumference of the edge ring Fb in a plan view. For example, in one embodiment, the edge ring Fb has a radially inwardly recessed recess Fb1 on its bottom outer circumference, and the cover ring Cb has a radially inwardly projecting protrusion Cb1 on its bottom. The engagement of the protrusion Cb1 with the recess Fb1 supports the edge ring Fb.

[0228] The bottom surface of the outer periphery of the edge ring Fb is provided with recessed portions Fb2 formed by upwardly recessed concave surfaces Fb2a at positions corresponding to the respective lift pins 504. The recessed portions Fb2 are provided in portions that overlap with the inner periphery of the cover ring Cb (specifically, the convex portions Cb1) when viewed from above.

[0229] The cover ring Cb has through-holes Cb2 at positions corresponding to the respective lift pins 504, through which the lift pins 504 are inserted, and which reach the recessed portion Fb2 of the edge ring Fb. The through-holes Cb2 are provided in the inner circumference of the cover ring Cb (specifically, the convex portion Cb1), which overlaps with the outer circumference of the edge ring Fb when viewed from above.

[0230] In addition, in this embodiment, the edge ring Fb and Figure 2 Similarly, the edge ring F has a step formed on the upper portion of its inner periphery, the upper surface of the outer periphery is formed higher than the upper surface of the inner periphery, and the inner diameter is smaller than the outer diameter of the wafer W.

[0231] In order to prevent the positional deviation of the cover ring Cb and the edge ring Fb, a protrusion may be provided on one of them and a recessed portion engaging with the protrusion may be provided on the other. Figure 20 As shown, a protrusion (hereinafter referred to as the "annular protrusion") Cb3 can be formed on the upper surface of the inner circumference of the cover ring Cb along the entire circumference of the curve of the cover ring Cb. A recess (hereinafter referred to as the "annular recess") Fb3 can be formed on the lower surface of the outer circumference of the edge ring Fb at a position corresponding to the annular protrusion Cb3 along the entire circumference of the curve of the edge ring Fb. The engagement between the annular protrusion Cb3 and the annular recess Fb3 can suppress positional deviation between the cover ring Cb and the edge ring Fb. Furthermore, by providing the annular protrusion Cb3 and the annular recess Fb3 in this manner, a path from the gap G between the outer circumferential end of the edge ring Fb and the cover ring Cb, which is open to the plasma processing space 100s, through the outer circumference of the edge ring F and the inner circumference of the cover ring Cb, to the electrostatic chuck 502 has a labyrinthine structure. This prevents active species in the plasma from reaching the electrostatic chuck 502 through this path.

[0232] In addition, Figure 20 In the example shown in FIG. 5 , the annular protrusion Cb3 and the annular recess Fb3 are provided on the inner peripheral side of the recess Fb2 , but may be provided on the outer peripheral side of the recess Fb2 .

[0233] In addition, if Figure 21 As shown, the annular protrusion Cb3 and the annular recess Fb3 may be provided at positions overlapping with the recess Fb2 in a plan view.

[0234] Alternatively, instead of the above example, a recessed portion may be formed on the upper surface of the inner circumference of the cover ring Cb, and a protrusion having a shape corresponding to the recessed portion of the cover ring Cb may be formed on the lower surface of the outer circumference of the edge ring Fb. This also suppresses positional misalignment between the cover ring Cb and the edge ring Fb, enabling the aforementioned labyrinthine structure to be formed.

[0235] The lift pins 504 are configured to extend from the upper surface 503a of the inner circumference of the support body 503, with the amount of extension from this upper surface 503a being adjustable. Specifically, the lift pins 504 are configured to extend from a position where the upper surface 503a of the inner circumference of the support body 503 overlaps with the edge ring Fb and the cover ring Cb when viewed from above. The through-holes 505 through which the lift pins 504 are inserted are formed at positions where the edge ring Fb and the cover ring Cb overlap when viewed from above.

[0236] Lifting pin 504 and Figure 2 Similarly, three or more lift pins 107 are provided at intervals along the circumferential direction of electrostatic chuck 502 .

[0237] Like lift pin 107, lift pin 504 has a hemispherical upper end that tapers upward. The upper end of lift pin 504 forms an edge ring support portion that engages with recess Fb2 of edge ring Fb to support edge ring Fb. When lift pin 504 is raised, its upper end passes through through-hole Cb2 of cover ring Cb and abuts recess Fb2 on the bottom surface of edge ring Fb, thereby supporting edge ring Fb from below.

[0238] The size of the recessed portion Fb2 is larger than the conveying accuracy of the edge ring Fb by the conveying device 70 and is larger than the size of the upper end portion of the lift pin 504 in a plan view.

[0239] Furthermore, since the upper end of the lift pin 504 is formed into a hemispherical shape that tapers upward as described above, the concave surface Fb2a forming the concave portion Fb2 is set to have a smaller curvature than the hemispherical convex surface 504a of the upper end of the lift pin 504. This allows the edge ring Fb to be positioned relative to the lift pin 504. The positioning accuracy of the edge ring Fb based on the upper end of the lift pin 504, i.e., the edge ring support portion, is, for example, 100 μm.

[0240] The lift pin 504 also includes a cover ring support portion 504b below the upper end portion of the edge ring support portion for supporting the cover ring Cb. The cover ring support portion 504b is configured to abut against the bottom surface of the cover ring Cb without passing through the through hole Cb2 of the cover ring Cb, thereby supporting the cover ring Cb from the bottom surface.

[0241] In addition, the cover ring support portion 504b may also be formed to position the cover ring Cb relative to the lift pin 504. Specifically, for example, Figure 19As shown, the lower portion of the through-hole Cb2 of the cover ring Cb may be chamfered to form a chamfered portion, and the upper end of the cover ring support portion 504b may be formed into a tapered shape corresponding to the chamfered portion. In other words, the lower opening of the through-hole Cb2 of the cover ring Cb may be formed so as to gradually widen downward, and the upper end of the cover ring support portion 504b may be formed into a shape corresponding to the lower opening of the through-hole Cb2 of the cover ring Cb, for example, so as to gradually taper upward. This allows, for example, the cover ring Cb to be positioned relative to the lift pins 504 so that the center of the through-hole Cb2 coincides with the center of the cover ring support portion 504b when viewed from above.

[0242] Furthermore, the size of the lower opening of the through-hole Cb2 of the cover ring Cb, when viewed from above, may be larger than the conveyance accuracy of the cover ring Cb supporting the edge ring Fb by the conveying device 70 and larger than the size of the upper end of the cover ring support portion 504b of the lift pin 504. Thus, when the lift pin 504 is raised and the cover ring support portion 504b contacts the bottom surface of the cover ring Cb, the upper end of the cover ring support portion 504b can be reliably received in the lower opening of the through-hole Cb2 of the cover ring Cb.

[0243] In addition, when the cover ring support portion 504b is formed in a manner capable of positioning the cover ring Cb relative to the lifting pin 504, the positioning accuracy of the edge ring Fb based on the upper end portion of the lifting pin 504, i.e., the edge ring support portion, is higher than the positioning accuracy of the cover ring Cb based on the cover ring support portion 504b.

[0244] Next, use Figures 22 to 24 , an example of a process of simultaneously mounting the edge ring Fb and the cover ring Cb will be described. Figures 22 to 24 1 and 2 are diagrams showing the state of the periphery of the wafer support table 500 during the above-mentioned process.

[0245] First, the transfer arm 71 holding the cover ring Cb supporting the edge ring Fb is inserted into the depressurized plasma processing chamber 100 of the process module 60 to be installed through the transfer port (not shown). Figure 22 As shown, the cover ring Cb supporting the edge ring Fb is transported by the transport arm 71 above the upper surface 502a of the peripheral portion of the electrostatic chuck 502 and the upper surface 503a of the support body 503 (hereinafter sometimes abbreviated as "the annular component mounting surface of the wafer support table 500").

[0246] Next, all the lifting pins 504 are raised, as shown in FIG. Figure 23As shown, the edge ring Fb is transferred from the cover ring Cb held by the conveying arm 71 to the upper end of the lift pin 504 that has passed through the through hole Cb2 of the cover ring Cb. At this time, the upper end of the lift pin 504 is received in the recess Fb2 provided on the bottom surface of the outer peripheral portion of the edge ring Fb, and the edge ring Fb is formed by the concave surface Fb2a (see Figure 19 ) and the convex surface 504a of the lift pin 504 are positioned relative to the lift pin 504.

[0247] Then, continue to raise all the lifting pins 504, as shown in FIG. Figure 24 As shown, the cover ring Cb is transferred from the transport arm 71 to the cover ring support portion 504b of the lift pin 504. At this time, the cover ring Cb is positioned relative to the lift pin 504 by, for example, the shape of the cover ring support portion 504b of the lift pin 504 and the lower opening of the through hole Cb2 of the cover ring Cb.

[0248] Next, the transfer arm 71 is pulled out of the plasma processing chamber 100 and the lift pins 504 are lowered, thereby placing the edge ring Fb and the cover ring Cb on the annular member placement surface of the wafer support table 500 .

[0249] Then, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the electrostatic chuck 502 , and the edge ring Fb is attracted and held by the electrostatic force generated thereby.

[0250] Thus, a series of processes for simultaneously mounting the edge ring Fb and the cover ring Cb are completed.

[0251] Next, a description will be given of a process for simultaneously removing the edge ring Fb and the cover ring Cb.

[0252] First, the application of the DC voltage to the electrode 109 provided on the electrostatic chuck 502 is stopped, and the attraction and holding of the edge ring Fb is released.

[0253] Next, all the lift pins 504 are raised, and the edge ring Fb is transferred from the wafer support table 500 to the upper end of the lift pins 504. Then, all the lift pins 504 are further raised, and the cover ring Cb is transferred from the wafer support table 500 to the cover ring supporting portion 504b of the lift pins 504.

[0254] Next, the transfer arm 71 is inserted into the depressurized plasma processing chamber 100 through the transfer port (not shown). Then, the transfer arm 71 is moved between the annular member mounting surface of the wafer support table 500 and the cover ring Cb supported by the cover ring support portion 504b of the lift pin 504. Figure 24 Same status.

[0255] Then, all the lifting pins 504 are lowered, and the cover ring Cb is transferred from the cover ring support portion 504b to the transport arm 71. Figure 23 Then, all the lifting pins 504 continue to descend, and the edge ring Fb is transferred from the upper end of the lifting pin 504 to the cover ring Cb held by the conveying arm 71. Figure 22 Next, the transfer arm 71 is withdrawn from the plasma processing chamber 100 , and the edge ring Fb and the cover ring Cb are transported out of the processing module 60 .

[0256] Thus, a series of processes of simultaneously removing the edge ring Fb and the cover ring Cb is completed.

[0257] Next, use Figures 25 to 27 , an example of the disassembly process of a single edge ring Fb is described. Figures 25 to 27 1 and 2 are diagrams showing the state around the wafer support table 500 during the above-mentioned process.

[0258] First, the application of the DC voltage to the electrode 109 provided on the electrostatic chuck 502 is stopped, and the attraction and holding of the edge ring Fb is released.

[0259] Next, all the lifting pins 504 are raised, as shown in FIG. Figure 25 As shown, the edge ring Fb is transferred from the wafer support table 500 to the upper end of the lift pins 504. At this time, the lift pins 504 are raised within a range where the cover ring Cb is not transferred from the wafer support table 500 to the cover ring support portion 504b of the lift pins 504, or within a range where the height of the cover ring Cb transferred to the cover ring support portion 504b is not higher than the height of the transfer arm 71 in the plasma processing chamber 100.

[0260] Next, the transfer arm 71 is inserted into the decompressed plasma processing chamber 100 through the transfer port (not shown). Figure 26 As shown, the transfer arm 71 is moved between the annular member mounting surface of the wafer support table 500 and the cover ring Cb and the edge ring Fb supported by the upper end portions of the lift pins 504 .

[0261] Next, all the lifting pins 504 are lowered, as shown in FIG. Figure 27 As shown, the edge ring Fb is delivered to the transfer arm 71 from the upper end of the lift pins 504 . Then, the transfer arm 71 is withdrawn from the plasma processing chamber 100 , and the single edge ring Fb is transported out of the processing module 60 .

[0262] Thus, a series of disassembly processes of the individual edge rings Fb are completed.

[0263] Next, an example of a mounting process of a single edge ring Fb will be described.

[0264] First, the transfer arm 71 holding a single edge ring Fb is inserted into the depressurized plasma processing chamber 100 of the processing module 60 to be installed through the inlet and outlet (not shown). Then, the transfer arm 71 transfers the single edge ring Fb to the annular component mounting surface of the wafer support table 500 and above the cover ring Cb mounted on the annular component mounting surface. Figure 27 Same status.

[0265] Next, all the lift pins 504 are raised, and the edge ring Fb is delivered from the transport arm 71 to the upper end of the lift pin 504 that has passed through the through hole Cb2 of the cover ring Cb. At this time, the upper end of the lift pin 504 is received in the recess Fb2 provided on the bottom surface of the outer periphery of the edge ring Fb, and the edge ring Fb is positioned relative to the lift pin 504 by the concave surface Fb2a forming the recess Fb2 and the convex surface 504a of the lift pin 504. Figure 26 Same status.

[0266] The lift pins 504 are raised within a range where the cover ring Cb is not transferred from the wafer support table 500 to the cover ring support portion 504b of the lift pins 504, or within a range where the cover ring Cb transferred to the cover ring support portion 504b does not interfere with the transfer arm 71.

[0267] Next, the transfer arm 71 is pulled out of the plasma processing chamber 100 and the lift pins 504 are lowered, thereby placing the edge ring Fb on the annular member placement surface of the wafer support table 500 .

[0268] Then, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the electrostatic chuck 502 , and the edge ring Fb is attracted and held by the electrostatic force generated thereby.

[0269] Thus, the mounting process of a series of individual edge rings Fb is completed.

[0270] According to this embodiment, the edge ring Fb and the cover ring Cb can be replaced simultaneously, thereby further shortening the time required for the above replacement. In addition, there is no need to provide a separate mechanism for raising and lowering the edge ring Fb and the cover ring Cb, thereby achieving cost reduction and space saving.

[0271] Furthermore, according to this embodiment, it is possible to selectively replace the edge ring Fb and cover ring Cb simultaneously or replace a single edge ring Fb. Furthermore, during any replacement, regardless of the conveying accuracy, at least the edge ring Fb can be positioned relative to the wafer support table 500 and placed thereon.

[0272] In addition, in this embodiment, when only the edge ring Fb of the edge ring Fb and the cover ring Cb is removed from the wafer support table 500, as shown in FIG. Figure 28 As shown, only the cover ring Cb can be supported by the lift pins 504. When only the cover ring Cb can be supported by the lift pins 504, the lift pins 504 and the transport arm 71 cooperate to attach and detach a single cover ring Cb.

[0273] Although various exemplary embodiments have been described above, the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. Furthermore, elements of different exemplary embodiments may be combined to form other exemplary embodiments.

[0274] For example, the upper end portion of the lifting member is not limited to a hemispherical shape that gradually tapers upward, and may be in a range where the upper end portion can be engaged with the recessed portion and positioned.

[0275] In addition to the above embodiments, the following supplementary notes are disclosed.

[0276] [Note 1]

[0277] A substrate support table comprising:

[0278] a substrate mounting surface for mounting a substrate;

[0279] an annular member mounting surface on which the annular member is mounted so as to surround the substrate held on the substrate mounting surface;

[0280] Three or more lift pins configured to be movable upward and downward from the annular member mounting surface so as to adjust the amount of projection from the annular member mounting surface; and

[0281] The lifting mechanism that raises and lowers the lifting pins.

[0282] A concave portion formed by an upwardly recessed concave surface is provided at a position corresponding to each lifting pin on the bottom surface of the annular member.

[0283] The curvature of the upper end portion of the lift pin is greater than the curvature of the recessed portion.

[0284] [Note 2]

[0285] As described in Appendix 1, in the substrate supporting table, the opening of the recessed portion is larger than the conveyance error of the ring-shaped member when conveyed above the ring-shaped member placement surface in a plan view.

[0286] [Note 3]

[0287] The substrate support table as described in Appendix 1 or 2, wherein the lifting mechanism causes the lifting pins to independently move up and down.

Claims

1. A substrate support table, characterized in that: include: a substrate mounting surface for mounting a substrate; an annular member placement surface on which an annular member arranged so as to surround the substrate held on the substrate placement surface is placed; Three or more lifting members are configured to extend from the annular member mounting surface and to be raised and lowered in a manner such that the amount of extension from the annular member mounting surface is adjustable; and a lifting mechanism for lifting the lifting component; A concave portion formed by an upwardly recessed concave surface is provided at a position corresponding to each of the lifting members on the bottom surface of the annular member. When viewed from above, the concave portion has a greater conveying accuracy than the upper end portion of the lifting member when conveying the annular member toward the upper side of the annular member placement surface, and is larger than the upper end portion of the lifting member. The upper end portion of the lifting member is formed into a hemispherical shape that gradually becomes thinner as it goes upward. The concave surface forming the concave portion has a smaller curvature than the convex surface forming the hemispherical shape at the upper end portion of the lifting member.

2. The substrate support table according to claim 1, wherein: The lifting mechanism is provided for each of the lifting members and supports the lifting member so that the lifting member is movable in the horizontal direction.

3. The substrate support table according to claim 1 or 2, wherein: include: a through hole formed so as to extend downward from the mounting surface of the annular member and for the lifting member to be inserted therethrough; and The guide is provided inside the through hole and defines the moving direction of the lifting member as a vertical direction.

4. The substrate support table according to claim 1 or 2, wherein: An electrode is included for adsorbing and holding the annular member by electrostatic force.

5. The substrate support table according to claim 1 or 2, wherein: The lifting member includes a columnar portion thicker than the upper end portion and a connecting portion connecting the upper end portion and the columnar portion. The connecting portion is formed in a frustum shape that gradually becomes thinner toward the upper side.

6. The substrate support table according to claim 1 or 2, wherein: Three or more lifting members are provided at intervals along the circumferential direction of the substrate mounting surface.

7. The substrate support table according to claim 1 or 2, wherein: The annular member is an edge ring disposed adjacent to the substrate placed on the substrate placement surface.

8. The substrate support table according to claim 1 or 2, wherein: The annular member is a cover ring that covers the outer side surface of an edge ring, wherein the edge ring is arranged adjacent to the substrate placed on the substrate placement surface.

9. The substrate support table according to claim 1 or 2, wherein: The annular member is composed of an edge ring disposed adjacent to the substrate placed on the substrate placement surface and a cover ring covering the outer side surface of the edge ring. The recessed portions are formed in the edge ring and the cover ring, respectively.

10. The substrate support table according to claim 1 or 2, wherein: The annular member is a cover ring that supports an edge ring disposed adjacent to the substrate placed on the substrate placement surface and covers the outer side surface of the edge ring. The recess is formed on the bottom surface of the cover ring.

11. The substrate support table according to claim 1 or 2, wherein: The annular member is composed of an edge ring disposed adjacent to the substrate placed on the substrate placement surface and a cover ring covering the outer side surface of the edge ring. The recess is formed on the bottom surface of the edge ring in the edge ring and the cover ring. The cover ring has a through hole for the lifting member to be inserted through, which reaches the recessed portion of the edge ring. The lifting member includes an edge ring support portion at an upper end portion that engages with the recessed portion of the edge ring to support the edge ring, and a cover ring support portion that supports the cover ring below the edge ring support portion.

12. The substrate support table according to claim 11, wherein: The cover ring support portion is formed to be able to position the cover ring relative to the lifting member.

13. The substrate support table according to claim 12, wherein: The lower opening of the through hole of the cover ring is formed so as to gradually become larger as it goes downward. The cover ring support portion is formed so as to gradually become thinner as it goes upward.

14. The substrate support table according to claim 13, wherein: The edge ring is positioned more accurately by the edge ring support portion than the cover ring is positioned accurately by the cover ring support portion.

15. The substrate support table according to claim 14, wherein: The edge ring positioning accuracy based on the edge ring support is less than 100 μm.

16. The substrate support table according to claim 11, wherein: An electrode for adsorbing and holding the edge ring by electrostatic force is provided in a portion overlapping the edge ring in a plan view.

17. A plasma processing system, characterized in that: include: A plasma processing apparatus comprising a substrate support table according to any one of claims 1 to 6 and a decompressible processing container in which the substrate support table is disposed, and capable of performing plasma processing on a substrate on the substrate support table; a transport device including a support portion for supporting the annular member, capable of inserting and withdrawing the support portion into and from the processing container to transport the annular member into and out of the processing container; and a control device for controlling the lifting mechanism and the conveying device, The control device controls the lifting mechanism and the conveying device to perform the following steps: a step of conveying the annular member supported by the supporting portion toward an upper side of the annular member placement surface; The step of raising the lifting member and transferring the annular member from the supporting portion to the lifting member; and After the support portion is evacuated, the lifting member is lowered to place the annular member on the annular member placement surface.

18. The plasma processing system of claim 17, wherein: The annular member is an edge ring disposed adjacent to the substrate placed on the substrate placement surface.

19. The plasma processing system of claim 17, wherein: The annular member is a cover ring that covers the outer side surface of an edge ring, wherein the edge ring is arranged adjacent to the substrate placed on the substrate placement surface.

20. The plasma processing system of claim 17, wherein: The annular member is composed of an edge ring disposed adjacent to the substrate placed on the substrate placement surface and a cover ring covering the outer side surface of the edge ring. The recessed portions are formed in the edge ring and the cover ring, respectively.

21. The plasma processing system of claim 17, wherein: The annular member is a cover ring that supports an edge ring disposed adjacent to the substrate placed on the substrate placement surface and covers the outer side surface of the edge ring. The recess is formed on the bottom surface of the cover ring.

22. The plasma processing system of claim 21, wherein: include: Another lifting member that is lifted and lowered in a manner of extending and sinking into the substrate mounting surface; as well as Other lifting mechanisms for lifting the other lifting components, The support portion of the conveying device is configured to support a jig having a diameter larger than the inner diameter of the edge ring. The control device controls the lifting mechanism, the conveying device and the other lifting mechanisms to perform the following steps: The step of raising the lifting member and transferring the cover ring supporting the edge ring from the annular member mounting surface to the lifting member; a step of moving the jig supported by the support portion to a position between the substrate mounting surface, the annular member mounting surface, and the cover ring supporting the edge ring; The step of raising the other lifting member and transferring the jig from the supporting portion to the other lifting member; After the support portion is moved away, the lifting component and the other lifting components are moved relative to each other to transfer the edge ring from the cover ring to the jig; a step of lowering only the lifting member to transfer the cover ring from the lifting member to the annular member mounting surface; After the support portion is moved between the cover ring and the jig supporting the edge ring, the other lifting member is lowered to transfer the jig supporting the edge ring from the other lifting member to the support portion; as well as The step of extracting the support portion from the processing container and sending the jig supporting the edge ring out of the processing container.

23. The plasma processing system of claim 17, wherein: The annular member is composed of an edge ring disposed adjacent to the substrate placed on the substrate placement surface and a cover ring covering the outer side surface of the edge ring. The recess is formed on the bottom surface of the edge ring in the edge ring and the cover ring. The cover ring has a through hole for the lifting member to be inserted through, which reaches the recessed portion of the edge ring. The lifting member includes an edge ring support portion at an upper end portion that engages with the recessed portion of the edge ring to support the edge ring, and a cover ring support portion that supports the cover ring below the edge ring support portion.

24. The plasma processing system of claim 22, wherein: In the step of conveying, the cover ring supported by the support portion and supporting the edge ring is conveyed. In the handover step, the lifting member is raised to hand over the edge ring from the cover ring supported by the support portion to the edge ring support portion of the lifting member, and the cover ring is handed over from the support portion to the cover ring support portion of the lifting member. In the placing step, the lifting member is lowered to place the edge ring and the cover ring on the annular member placing surface.

25. The plasma processing system of claim 22, wherein: In the step of conveying, the edge ring supported by the support portion is conveyed, In the handover step, the lifting member is raised to hand over the edge ring from the support portion to the edge ring support portion of the lifting member. In the placing step, the lifting member is lowered to place the edge ring on the annular member placing surface on which the cover ring is placed.

26. A method for installing an annular component in a plasma processing device, characterized in that: The plasma processing device comprises: a processing container configured to be depressurizable; and a substrate support table provided inside the processing container, The substrate support table has: a substrate mounting surface for mounting a substrate; an annular member placement surface on which an annular member arranged so as to surround the substrate held on the substrate placement surface is placed; Three or more lifting members configured to extend from and retract into the annular member mounting surface and to be raised and lowered in such a manner that the amount of extension from the annular member mounting surface is adjustable; as well as a lifting mechanism for lifting the lifting component; A concave portion formed by an upwardly recessed concave surface is provided at a position corresponding to each of the lifting members on the bottom surface of the annular member. When viewed from above, the concave portion has a greater conveying accuracy than the upper end portion of the lifting member when conveying the annular member toward the upper side of the annular member placement surface, and is larger than the upper end portion of the lifting member. The upper end portion of the lifting member is formed into a hemispherical shape that gradually becomes thinner as it goes upward. The concave surface forming the concave portion has a smaller curvature than the convex surface forming the hemispherical shape at the upper end portion of the lifting member. This installation method includes: a step of conveying the annular member supported by a supporting portion of a conveying device toward an upper side of the annular member placement surface; The step of raising the lifting member so that the recessed portion on the bottom surface of the annular member engages with the upper end portion of the lifting member, and transferring the annular member from the supporting portion to the lifting member; and After the support portion is evacuated, the lifting member is lowered to place the annular member on the annular member placement surface.

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