Impedance elements with built-in odd-mode oscillation suppression

Abstract

A transistor package for a power amplifier is provided. The transistor package includes a plurality of radio frequency (RF) paths, the plurality of radio frequency (RF) paths including a first RF path and a second RF path. Each RF path includes a transistor-carrying die and at least one impedance element. The transistor package includes a circuit portion that electrically couples a first impedance element in the first RF path to a second impedance element in the second RF path, wherein the circuit portion includes at least one resistor.

Description

Technical Field

[0001] The present disclosure relates to power amplifiers and, in particular, to metal oxide semiconductor capacitors / integrated passive devices (MOSCAPs / IPDs) with built-in odd mode oscillation suppression such as may be used in power amplifiers such as in circuits for wireless communication applications. Background Art

[0002] Radio frequency (RF) power amplifiers used in cellular base stations are often required to output peak power levels in excess of 500W. These power amplifiers, in turn, require transistors with large die peripheries to provide the required power. For lower power applications, the transistor may require only a single die. However, for high power applications, two or more dies may often be used in a single package to meet the power requirements.

[0003] Figure 1 illustrates a physical view of a typical package 10 configuration, and Figure 2 Explained Figure 1 The corresponding circuit schematic diagram. The transistor package 10 consists of two RF paths 12a and 12b (collectively referred to as RF paths 12). Each RF path 12 consists of a die 14 and one or more impedance elements 16a and 16b (collectively referred to as tuning elements 16) on the input and a possible impedance element 16 on the output. The one or more impedance elements 16 may be one or more shunt tuning elements. These impedance elements 16 are typically either metal oxide semiconductor capacitors (MOSCAPs), metal-insulator-metal (MIM) capacitors, or integrated passive devices (IPDs), wherein one or more impedance elements 16 may have a capacitor 15. These impedance elements 16 are connected to bonding wires 18 having bonding wire inductances 17, and the bonding wires 18 are also used to connect these impedance elements 16 to input leads 20 and output leads 22 of the transistor package 10. In Figure 1 In the example of FIG. 1 , there is a single set of input and output leads 20 , 22 that are shared by two RF paths 12 .

[0004] Figure 3 Explains the Figure 1 A similar transistor package 10 configuration is shown, but in which each RF path 12 has its own set of input and output leads 20, 22. These leads 20, 22 are typically located as in Figure 3 The package 10 is connected to a printed circuit board (PCB) 11 shown in the figure, wherein there may be no connection of leads inside the package 10 . Figure 4 Explained Figure 3 The corresponding circuit diagram.

[0005] Two parallel paths are used to amplify the even-mode signal. Figure 5As shown in , even-mode signals are those signals that have equal amplitude and phase at the points where the parallel paths merge and split. However, in the case of two or more paths connected in parallel, odd-mode signals may exist. Odd-mode signals are Figure 6 The signal shown in FIG. 1 has equal amplitude but opposite phase at the merging and splitting points of the two parallel paths. Because the two odd-mode components are always completely opposite to each other at the splitting and merging nodes, a virtual short is formed at these points.

[0006] Under certain gain and feedback conditions in the transistor, there may be an odd-mode oscillation between the two paths. This odd-mode oscillation may degrade the performance of the power amplifier (PA) and may even cause damage to the transistor or other components used in the power amplifier.

[0007] A common solution to prevent odd-mode oscillations is to add a damping resistor between the two RF paths 12. This resistor will introduce losses into any odd-mode signal content since the opposite phases of the signal components will establish a potential difference across the resistor. If the value and position of the resistor are chosen correctly, this loss can eliminate the conditions that would lead to odd-mode oscillations. Note that since the even-mode signal components are in phase, there is no even-mode potential difference across the resistor, so this resistor does not introduce losses into the even-mode signal.

[0008] Damping resistors 24 may be added within the odd-mode loop including the input and output sides of die 14. Multiple resistors 24a-24b (collectively referred to as resistors 24 and / or damping resistors 24) may be added if desired. Typically, damping resistors 24 are added as close to the die as possible. This will allow damping resistors 24 to be effective over as wide a frequency range as possible. Some dies 14 have built-in resistors 24 on the input and / or output as well as separate bond pads for just this purpose. Figure 7 Explains this. Figure 8 Explained Figure 7 The corresponding circuit diagram.

[0009] In other cases, a die 14 with built-in resistor 24 and additional bonding pads may not be available. Fig. 9 As shown in FIG, a damping resistor 24 (i.e., an odd-mode resistor) may be added external to the transistor package, on the printed circuit board (PCB) 11, which may require the transistor package 10 to have separate input and output leads for each RF path 12. And it may not be as efficient as a solution with a damping resistor 24 positioned closer to the die 14. Fig.10 Explained Fig. 9 The corresponding circuit diagram. Summary of the invention

[0010] Some embodiments advantageously provide a Metal Oxide Semiconductor Capacitor / Integrated Passive Device (MOSCAP / IPD) with built-in odd mode oscillation suppression.As described herein, the proposed solutions presented herein are relevant to various types of packages.

[0011] As described herein, some embodiments are based on augmented packaging where MOSCAPs and / or IPDs are used as impedance matching elements within a transistor package by including damping resistors and / or additional bonding pads for connecting two RF paths together.

[0012] As described herein, a single MOSCAP, MIMCAP or IPD may also be implemented with capacitors to avoid the use of bond wires bridging between two caps and to reduce the physical component count within the package. These and other embodiments are described in more detail below.

[0013] According to one aspect of the disclosure, a transistor package for a power amplifier is provided. The transistor package includes a plurality of radio frequency (RF) paths, the plurality of radio frequency (RF) paths including a first RF path and a second RF path. Each RF path includes a transistor-carrying die and at least one impedance element. The transistor package includes a circuit portion that electrically couples a first impedance element in the first RF path to a second impedance element in the second RF path, wherein the circuit portion includes at least one resistor.

[0014] According to one or more embodiments of this aspect, at least one resistor is configured to suppress odd-mode signal components associated with the first RF path and the second RF path. According to one or more embodiments of this aspect, at least one resistor includes at least a first resistor and a second resistor. The first resistor is electrically coupled to the first impedance element. The second resistor is electrically coupled to the second impedance element, and the first resistor and the second resistor are electrically coupled to each other. According to one or more embodiments of this aspect, at least one resistor includes at least a first resistor and a second resistor. The first resistor is integrated with the first impedance element and the second resistor is integrated with the second impedance element, and the first resistor and the second resistor are electrically coupled to each other.

[0015] According to one or more embodiments of this aspect, the circuit portion includes at least one of at least one reactive element and at least one transmission line. According to one or more embodiments of this aspect, the circuit portion includes an inductive element. The first resistor is electrically coupled to the second resistor through the inductive element. According to one or more embodiments of this aspect, the circuit portion electrically couples the first impedance element in the first RF path to the second impedance element in the second RF path using at least one bonding wire.

[0016] According to one or more embodiments of this aspect, the circuit portion includes a capacitor, wherein the first resistor and the second resistor are electrically coupled to ground via the capacitance. According to one or more embodiments of this aspect, the circuit portion includes a capacitor, wherein the capacitor electrically couples a first impedance element in a first RF path to a second impedance element in a second RF path. According to one or more embodiments of this aspect, the impedance element is one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD. According to one or more embodiments of this aspect, the first RF path has an input and an output that are separated from the input and output of the second RF path. According to one or more embodiments of this aspect, at least one impedance element corresponds to a plurality of impedance elements. According to one or more embodiments of this aspect, the plurality of RF paths include at least one RF path in addition to the first RF path and the second RF path.

[0017] According to another aspect of the disclosure, a power amplifier is provided. The power amplifier includes a printed circuit board and a transistor package disposed on the printed circuit board. The transistor package includes a first radio frequency (RF) path, the first radio frequency (RF) path including a first transistor carrier die and at least a first impedance element. The transistor package includes a second RF path, the second RF path including a second transistor carrier die and at least a second impedance element. The transistor package includes a circuit portion that electrically couples a first impedance element in the first RF path to a second impedance element in the second RF path, wherein the circuit portion includes at least one resistor.

[0018] According to one or more embodiments of this aspect, at least one resistor is configured to suppress odd-mode signal components associated with the first RF path and the second RF path. According to one or more embodiments of this aspect, at least one resistor includes at least a first resistor and a second resistor, wherein the first resistor is electrically coupled to the first impedance element and the second resistor is electrically coupled to the second impedance element, and the first resistor and the second resistor are electrically coupled to each other. According to one or more embodiments of this aspect, at least one resistor includes at least a first resistor and a second resistor, wherein the first resistor is integrated with the first impedance element and the second resistor is integrated with the second impedance element, and the first resistor and the second resistor are electrically coupled to each other.

[0019] According to one or more embodiments of this aspect, the circuit portion includes at least one of at least one reactive element and at least one transmission line. According to one or more embodiments of this aspect, the circuit portion includes an inductive element, wherein the first resistor is electrically coupled to the second resistor through the inductive element. According to one or more embodiments of this aspect, the circuit portion electrically couples a first impedance element in the first RF path to a second impedance element in the second RF path using at least one bonding wire.

[0020] According to one or more embodiments of this aspect, the circuit portion includes a capacitor, wherein the first resistor and the second resistor are electrically coupled to ground via the capacitance. According to one or more embodiments of this aspect, the circuit portion includes a capacitor, wherein the capacitor electrically couples a first impedance element in the first RF path to a second impedance element in the second RF path. According to one or more embodiments of this aspect, the impedance element is one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD. According to one or more embodiments of this aspect, the first RF path has an input and an output that are separated from an input and an output of the second RF path. According to one or more embodiments of this aspect, at least one impedance element corresponds to a plurality of impedance elements.

[0021] According to another aspect of the disclosure, a power amplifier is provided. The power amplifier includes a printed circuit board and a transistor package disposed on the printed circuit board. The transistor package includes a first radio frequency (RF) path, the first radio frequency (RF) path including a first transistor carrier die and at least a first impedance element separated from the first transistor carrier die. The transistor package includes a second RF path, the second RF path including a second transistor carrier die and at least a second impedance element separated from the second transistor carrier die. The transistor package includes a circuit portion that electrically couples the first impedance element in the first RF path to the second impedance element in the second RF path. The circuit portion includes at least one damping resistor configured to suppress odd-mode signal components in the power amplifier. The first impedance element and the second impedance element are one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] A more complete understanding of the present embodiments and the attendant advantages and features thereof will be more readily appreciated by reference to the following detailed description when considered in conjunction with the accompanying drawings, in which:

[0023] Figure 1 A physical view of a typical package configuration is shown;

[0024] Figure 2 Shows Figure 1 A circuit diagram of a package configuration;

[0025] Figure 3 A typical package configuration is shown, where each RF path has its own set of input and output leads;

[0026] Figure 4 yes Figure 3 A circuit diagram of a package configuration;

[0027] Figure 5 An even-mode signal is shown;

[0028] Figure 6 The odd-mode signal is shown;

[0029] Figure 7 A package configuration having a die with a built-in resistor is shown;

[0030] Figure 8 Shows Figure 7 A circuit diagram of a package configuration;

[0031] Fig. 9 shows a package configuration with a damping resistor added to a printed circuit board;

[0032] Fig.10 Shows Fig. 9 A circuit diagram of a package configuration;

[0033] Fig.11 One example of a package configuration having an impedance matching network augmented by at least one resistor according to the disclosed principles is shown;

[0034] Fig.12 Based on the principle of openness Fig.11 A circuit diagram of a package configuration;

[0035] Fig.13 is another example of a circuit schematic of a package configuration having separated input and output leads for two RF paths according to the disclosed principles;

[0036] Fig.14 Based on the principle of openness Fig.13 A circuit diagram of a package configuration;

[0037] Fig.15 Another example of a package configuration having an impedance matching network augmented by at least one resistor having additional capacitance according to the disclosed principles is shown;

[0038] Fig.16 Based on the principle of openness Fig.15 A circuit diagram of a package configuration;

[0039] Fig.17 is a physical view of a capacitor tuning element according to the disclosed principles;

[0040] Fig.18 Based on the principle of openness Fig.17 Circuit diagram of

[0041] Fig.19 is a physical view of a tuning element incorporated into an impedance network according to the disclosed principles;

[0042] Fig. 20 It is based on the principle of disclosure. Fig.17 A circuit diagram of a tuning element of an impedance network;

[0043] Fig.21 shows a physical view of a tuning element with capacitors and embedded resistors;

[0044] Fig. 22 yes Fig.21 A circuit diagram of a tuning element;

[0045] Fig.23 shows a device that has been modified and incorporated into an impedance network according to the disclosed principles. Fig.21 Physical view of the multi-tuning element;

[0046] Fig.24 Based on the principle of openness Fig.23 Circuit diagram of the tuning element and impedance network;

[0047] Fig.25 shows a physical view of a tuning element with a shunt capacitor and an inductor according to the disclosed principles;

[0048] Fig.26 Based on the principle of openness Fig.25 A circuit diagram of a tuning element;

[0049] Fig. 27 The invention shows an incorporation of an impedance network according to the disclosed principles. Fig.25 Physical view of the tuning elements;

[0050] Fig.28 Based on the principle of openness Fig. 27 Circuit diagram of the tuning element and impedance network;

[0051] Fig.29 is a block diagram of a power amplifier according to the disclosed principles. DETAILED DESCRIPTION

[0052] Before describing the exemplary embodiments in detail, it is noted that the embodiments reside primarily in a combination of device components and processing steps that are associated with one or more impedance elements, such as metal oxide semiconductor capacitors / integrated passive devices (MOSCAP / IPDs), with built-in odd-mode oscillation suppression. Therefore, components have been represented in the accompanying drawings by conventional symbols where appropriate, and only those specific details relevant to understanding the embodiments are shown so as not to obscure the disclosure with details that will be obvious to those of ordinary skill in the art who benefit from the description herein. Throughout the description, the same numbers refer to the same elements. For ease of explanation, although the same reference numerals represent the same elements, these same elements may or may not have the same one or more characteristics such as values. For example, at least some impedance elements 16a (discussed below) may or may not have the same characteristics such as about capacitance, etc. In another example, at least some resistors 24a (discussed below) may or may not have the same characteristics such as about resistance values, that is, the at least some resistors 24a may correspond to the same resistance value in some embodiments or may correspond to one or more different resistance values ​​in some embodiments. In yet another example, at least some of the inductive elements, such as bond wires, may or may not have the same characteristics (ie, inductance values).

[0053] As used herein, in one or more embodiments, an impedance element is a passive component that is specifically added to tune (or modify) the impedance presented by the transistor at the input / output of the package and / or provided by the transistor to the input / output of the package and / or provided by the transistor from the package plane to the active die. The impedance element may correspond to one or more basic tuning components such as one or more of a capacitor, an inductor, a resistor, a transmission line, a combination of transmission lines, etc.

[0054] As used herein, in one or more embodiments, an integrated passive device (IPD) refers to an integrated circuit (IC) implementation of an impedance element. The IPD includes one or more basic tuning components such as one or more capacitors, inductors, resistors, transmission lines, combinations of transmission lines, etc. The substrate of the IPD can be composed of one or more of silicon, GaAs, GaN, etc.

[0055] As used herein, relational terms such as "first" and "second", "top" and "bottom", etc., may be used alone to distinguish one entity or element from another entity or element without requiring or implying any physical or logical relationship or order between such entities or elements. The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the concepts described herein. Unless the context clearly indicates otherwise, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well. It will be further understood that when used herein, the terms "comprises", "comprising", "includes", and / or "including" specify the presence of stated features, integers, steps, operations, elements, and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups thereof.

[0056] In the embodiments described herein, connection terms such as "in communication with..." may be used to indicate electrical or data communications that may be achieved, for example, by physical contact, induction, electromagnetic radiation, radio signaling, infrared signaling, or optical signaling. Those skilled in the art will appreciate that multiple components may interoperate and that modifications and variations are possible to achieve electrical and data communications.

[0057] In some embodiments described herein, the terms "coupled", "connected", etc. may be used herein to indicate a connection (although not necessarily directly), and the terms "coupled", "connected", etc. may include wired and / or wireless connections. For example, saying that one element is coupled to another element means that the two elements are directly physically connected and / or coupled via at least a third element.

[0058] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. It will be further understood that the terms used herein should be interpreted as having a meaning consistent with their meanings in the context of this specification and in the relevant art, and unless explicitly defined as such herein, the terms used herein will not be interpreted in an idealized or overly formal sense.

[0059] Embodiments provide matching elements (i.e., impedance elements) that incorporate odd-mode suppression into multi-die transistors. In one or more embodiments, these impedance elements may be one or more of an integrated passive device (IPD), a metal insulator metal capacitor (MIMCAP), and a metal oxide semiconductor capacitor (MOSCAP) connected to transistor leads and die, for example, using bonding wires. A transistor typically includes one or more of these impedance elements on its input and one or possibly no impedance element on its output. The disclosure herein is applicable to any multi-die transistor having at least one IPD, MIMCAP, or MOSCAP tuning element (i.e., impedance element) per die.

[0060] Referring again to the drawings, wherein like elements are referred to by like reference numerals, Fig.11 An example of a transistor package 10 is shown in FIG. 1 , which is configured to provide odd-mode damping using at least one impedance element 16 such as one or more of a MOSCAP, a MIMCAP, or an IPD. Fig.12 It is explained in Fig.11 Circuit diagram of the circuit. Return to reference Fig.11 , the transistor package 10 may include a single input lead and a single output lead. Between these leads are two RF paths 12, each path 12 having two input impedance elements 16 (i.e., shunt matching elements such as a first input MOSCAP / IPD and a second input MOSCAP / IPD), a die 14, and an impedance element 16 (i.e., a shunt matching element such as an output MOSCAP / IPD). In one or more embodiments, the one or more impedance elements 16 are one or more shunt matching elements. For each of one or more of these impedance elements 16, a first odd mode resistor 24a is coupled to one of the impedance elements 16 in one RF path 12 and a second odd mode resistor 24b is coupled to another of the impedance elements 16 in another RF path 12. The resistors 24 may generally provide resistance such that the first resistor 24a may provide a first resistance. The resistors 24a and 24b may be coupled by a bonding wire 18, wherein the bonding wire has an inductance 28. In one or more embodiments, as Fig.11 As illustrated, resistor 24a is coupled to a corresponding resistor 24b, ie, resistors 24a and 24b associated with the same impedance element 16 are coupled together.

[0061] Resistors 24a and 24b and bonding pads may be built into a corresponding one of the impedance elements 16 on the inner side of the impedance element 16. This allows for the use of short bond wires 18, resulting in bond wire inductance 28 to be used to connect the MOSCAP, MIMCAP, or IPD from the opposite side through resistors 24a and 24b. In one or more embodiments, additional resistors 24 may be included, wherein resistors 24 may be positioned at different locations of the impedance element 16, such as, for example, Fig.19 Illustrated is near the edge of impedance element 16. As used herein, resistor 24 and resistance 24 may be used interchangeably.

[0062] Any odd-mode signal within this device can be present on both RF paths 12 within the transistor package 10 but with opposite phases. This results in a potential difference between common points on either RF path 12. Inserting resistors 24a and 24b between the RF paths 12 results in the dissipation of this odd-mode signal which damps the potential of the odd-mode oscillation. In one or more embodiments, one or more impedance / tuning elements are present at the output (i.e., output lead 22) of one or more RF paths 12. In addition, although in Fig.11 Only two RF paths 12 are described, but Figure 11-28 , and one or more embodiments described herein may include N RF paths 12, where N is, for example, an integer greater than 2. In addition, in one or more embodiments, the transistor package 10 may include at most N RF paths 12, each RF path 12 including a transistor-carrying die and at least one impedance element 16. For example, the circuit portion may connect one of the impedance elements 16 in the second RF path 12 to one of the impedance elements 16 in the third RF path 12. In other words, the circuit portion may connect one of the impedance elements 16 in the N-1 th RF path 12 to one of the impedance elements 16 in the N th RF path 12.

[0063] Fig.13 is a diagram showing an example of a similar application of the solution described herein. Fig.13 The transistor package 10 shown in FIG. 1 has two sets of input leads 20 and output leads 22, one set for each of the RF paths 12. Fig.14 It is explained in Fig.13 The circuit diagram of Fig.11 and Fig.13 In both, all three impedance elements 16 are shown with odd-mode resistors 24a and 24b. However, in some embodiments, only one or two of the impedance elements 16 may use this additional resistor 24.

[0064] Fig.15An embodiment is shown in which bonding wires 18 are not used to connect adjacent impedance elements 16 by using a single longer impedance element 16 (ie, MOSCAP / MIMCAP / IPD) instead of using, for example, one or more transmission lines. Fig.16 It is explained in Fig.15 Circuit diagram of the circuit. Return to reference Fig.15 , in this embodiment, the odd mode resistor 24 is built into and / or integrated into this longer impedance element 16. In one or more embodiments, both sides of the resistors 24a and 24b are optionally connected by a common shunt capacitor 26. In one or more embodiments, the impedance element 16 may include at least one transmission line connected to the RF path 12. In one or more embodiments, the impedance element 16 may include at least one inductor connected to the RF path 12. In one or more embodiments, the capacitor 26 may be omitted. The impedance element 16 and the resistor 24 are integrated on one or the same chip.

[0065] Figure 17-28 Some examples of impedance elements 16 (MOSCAP / MIMCAP / IPD) and their equivalent circuits (i.e., circuit system schematics) are shown in more detail. Figure 17-18 In each of 21-22 and 25-26, an example impedance element 16 is shown, and Figure 19-20 , 23-24 and 27-28, it is shown how the impedance element 16 augments the odd-mode damping resistor 24. Note that in Figure 19-20 , 23-24 and 27-28, the RLC impedance network is symmetrical with respect to the line passing between the first resistor and the second resistor. However, other asymmetrical embodiments are envisioned according to the disclosed teachings.

[0066] More specifically, Figure 17-18 An embodiment of a capacitor 15 of an impedance element 16 is shown and Figure 19-20 An equivalent circuit of impedance element 16 within an RLC impedance network is shown including resistors 24a and 24b, bond wire inductance 28, capacitor 15, and capacitor 30. Optional odd mode resistors 24 may be included for one or more impedance elements 16 in one or more embodiments described herein.

[0067] Figure 21-22 A pair of capacitors 15 are shown with an embedded resistor 27. This resistor 27 may be included in some embodiments to damp odd-mode signals that may exist from one RF path 12 to another RF path 12. However, the resistor 27 itself may not provide damping of odd-mode signal components that exist between RF paths. This may be achieved, for example, by adding an odd-mode resistor 24 (e.g. Fig.23 ), modified according to public teachings Fig.21The impedance element 16 described in the figure is used to take into account the damping of the odd-mode signal components. Figure 21-22 It can be applicable to N RF paths with (N-1) resistors. Figure 23-24 Capacitor 15 is shown with an embedded resistor 27 within an RLC network that includes resistors 24 a and 24 b , bond wire inductance 28 , capacitor 30 , which may be provided by bond pad capacitance, and resistor 27 .

[0068] Figure 25-26 An IPD is shown with shunt capacitor 15 and an additional inductor-capacitor 31 connected to the IPD, which includes bond pad capacitance provided by capacitor 30 forming an inductor-capacitor pair and chip inductor 31. This additional connection may be used to provide baseband decoupling and / or biasing. Figure 27-28 shows the RLC network Fig. 27 The RLC network includes resistors 24a and 24b, bond wire inductance 28, and bond pad capacitor 30. In one or more embodiments, one or more configurations described herein may not implement / use one or more shunt capacitors.

[0069] These are just a few examples of impedance elements (i.e., tuning elements) into which the odd-mode damping solutions described herein may be incorporated. One or more embodiments operate to reduce or eliminate odd-mode oscillations in multi-die transistors. Some embodiments may be used with other odd-mode stabilization methods available in transistors. Some embodiments do not provide other stabilization methods than those described herein.

[0070] Therefore, according to one aspect, a transistor package 10 with odd-mode signal suppression is provided. The transistor package 10 includes a transistor-carrying die 14 and at least one impedance element 16 separated from the transistor-carrying die 14 in each of at least two RF paths 12. In addition, the transistor package 10 includes a circuit portion that couples a first impedance element 16 in one RF path 12 to a corresponding second impedance element 16 in another RF path 12. The circuit portion has a first resistor 24a coupled to the first impedance element 16 and a second resistor 24b coupled to the second impedance element 16, the first resistor 24a being coupled to the second resistor 24b to suppress odd-mode signals.

[0071] According to this aspect, in some embodiments, the impedance element 16 includes a capacitor coupled to ground of the transistor package 10. In some embodiments, the first resistor 24a is coupled to the second resistor 24b by an inductor 28, such as an inductor provided by the bond wire 18. In some embodiments, the plurality of impedance elements 16 are arranged in pairs, with one impedance element 16 of the pair being in one RF path 12 and the other corresponding impedance element 16 of the pair being in another RF path 12, and the impedance elements 16 of the pair being coupled by the first and second resistors 24a and 24b. In some embodiments, the first and second resistors 24a and 24b are coupled to ground at a center point by the capacitor 26. In some embodiments, for example, Fig.28 As illustrated in FIG. 1 , the first and second resistors 24 a and 24 b are coupled via an inductor 28 and / or a bond wire 18, with a capacitor 30 shunted to ground of the transistor package 10 on each side of the inductor 28. In some embodiments, one RF path 12 has an output and an input that are separated from another output and input of another RF path 12. In some embodiments, for each RF path 12, a second bond wire inductor is connected in parallel with the inductor 28, and the inductor 28 is connected in series with the corresponding RF path 12. In some embodiments, for example, Fig.26 As illustrated, for each RF path 12, the second bond pad capacitor 30 is coupled to the inductor 28 through the chip inductor 31, and the inductor 28 is connected in series with the corresponding RF path 12. In some embodiments, the impedance element 16 to which the first and second resistors 24a and 24b are coupled includes one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device (IPD).

[0072] According to another aspect, a power amplifier configured to suppress odd-mode signals is provided. The power amplifier includes a transistor package 10 on a printed circuit board 11. The transistor package 10 includes a first die 14 in a first RF path 12 that supports a first transistor, and a first shunt capacitor 15 that is separated from the first die 14 and provided to the ground of the transistor package 10, and a first impedance element 16 that provides a first resistor 24a. The transistor package 10 includes a second die 14 in a second RF path 12 that is parallel to the first RF path 12 that supports a second transistor, and a second shunt capacitor 15 that is separated from the second die 14 and provided to the ground of the transistor package 10, and a second impedance element 16 that provides a second resistor 24b that is coupled to the first resistor 24a. For example, Fig.16 As described in , the first and second resistors 24a and 24b are configured to suppress odd-mode signals in the power amplifier.

[0073] According to this aspect, in some embodiments, the first resistor 24a is coupled to the second resistor 24b via an inductor 28, such as a bonding wire inductor 28. In some embodiments, for example, Fig.28 As described in FIG. 1 , there are additional shunt capacitors 30 to ground on each side of the bond wire inductance 28. In some embodiments, the first resistor 24a is coupled to an impedance network that includes the first impedance element 16 and an additional inductor-capacitor LC network. In some embodiments, the LC network includes a chip inductor 31 and a bond pad capacitor 30. In some embodiments, for example, Fig.16 As illustrated in FIG. 1 , the first resistor 24 a and the second resistor 24 b are coupled at a point where the third shunt capacitor 26 is coupled to the ground of the transistor package 10. In some embodiments, the first resistor 24 a and the second resistor 24 b are in a resistance-inductance-capacitance RLC network that is symmetrical with respect to a line passing between the first and second resistors 24 a and 24 b. In some embodiments, for example, Fig. 20 As described in , the inductor 28 of the RLC network is a bond wire inductor 28. In some embodiments, for example, Fig.26 As described in , the inductor 31 of the RLC network is a chip inductor. In some embodiments, the impedance element to which the first and second resistors 24a and 24b are coupled includes one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device (IPD).

[0074] In one or more embodiments described herein, the position and / or positioning of one or more impedance elements 16 can be changed. For example, one or more impedance elements 16 can be located and / or positioned at the input and / or output of the transistor-carrying die 14. In one or more examples, the transistor-carrying die 14 and the impedance element 16 can be on the same transistor-carrying die 14. In one or more examples, the one or more impedance elements 16 are one or more flanges of a device (i.e., a power amplifier). In one or more examples, the one or more impedance elements 16 are one or more transmission lines on the PCB 11.

[0075] In one or more embodiments described herein, as described herein, the circuit portion connecting at least two impedance elements includes at least one of the following: at least one resistor, at least one reactive element (inductor / capacitor), and at least one transmission line. In one or more embodiments described herein, coupling to the two elements may be provided by one or more or inductors, series capacitors, and the like.

[0076] According to one aspect of the disclosure, a transistor package 10 is provided for a power amplifier 32. The power amplifier 32 may include Fig.29 One or more transistor packages 10a-10n and one or more printed circuit boards 11 described in the specification, together with other power amplifier components known in the art. In one or more embodiments, the inputs and / or outputs in one or more transistor packages 10a-10n can be combined. The transistor package 10 includes a plurality of radio frequency RF paths 12 including a first RF path 12 and a second RF path 12. Each RF path 12 includes a transistor carrier die 14 and at least one impedance element 16. The transistor package includes a circuit portion that electrically couples the first impedance element 16 in the first RF path 12 to the second impedance element 16 in the second RF path 12, wherein the circuit portion includes at least one resistor 24.

[0077] According to one or more embodiments of this aspect, at least one resistor 24 is configured to suppress odd-mode signal components associated with the first and second RF paths 12. According to one or more embodiments of this aspect, at least one resistor 24 includes at least a first resistor 24 and a second resistor 24. The first resistor 24 is electrically coupled to the first impedance element 16. The second resistor 24 is electrically coupled to the second impedance element 16, and the first and second resistors 24 are electrically coupled to each other. According to one or more embodiments of this aspect, at least one resistor 24 includes at least a first resistor 24 and a second resistor 24. The first resistor 24 is integrated with the first impedance element 16 and the second resistor 24 is integrated with the second impedance element 16, and the first and second resistors 24 are electrically coupled to each other.

[0078] According to one or more embodiments of this aspect, the circuit portion includes at least one of at least one reactive element and at least one transmission line. According to one or more embodiments of this aspect, the circuit portion includes an inductive element 18. The first resistor 24 is electrically coupled to the second resistor 24 through the inductive element 18. According to one or more embodiments of this aspect, the circuit portion electrically couples the first impedance element 16 in the first RF path 12 to the second impedance element 16 in the second RF path 12 using a bonding wire 18.

[0079] According to one or more embodiments of this aspect, the circuit portion includes a capacitor, wherein the first resistor 24 and the second resistor 24 are electrically coupled to ground through capacitance. According to one or more embodiments of this aspect, the circuit portion includes a capacitor, wherein the capacitors 26, 30 electrically couple the first impedance element 16 in the first RF path 12 to the second impedance element 16 in the second RF path 12. According to one or more embodiments of this aspect, the impedance element 16 is one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD.

[0080] According to one or more embodiments of this aspect, the first RF path 12 has an input and an output that are separated from the input and output of the second RF path 12. According to one or more embodiments of this aspect, at least one impedance element 16 corresponds to a plurality of impedance elements 16. According to another aspect of the disclosure, a power amplifier 32 is provided. The power amplifier 32 includes a printed circuit board 11 and a transistor package 10 disposed on the printed circuit board 11. The transistor package 10 includes a first radio frequency RF path 12, the first radio frequency RF path 12 includes a first transistor carrier die 14 and at least a first impedance element 16. The transistor package includes a second RF path 12, the second RF path 12 includes a second transistor carrier die 14 and at least a second impedance element 16. The transistor package includes a circuit portion that electrically couples the first impedance element 16 in the first RF path 12 to the second impedance element 16 in the second RF path 12, wherein the circuit portion includes at least one resistor 24.

[0081] According to one or more embodiments of this aspect, at least one resistor 24 is configured to suppress odd-mode signal components associated with the first and second RF paths 12. According to one or more embodiments of this aspect, at least one resistor 24 includes at least a first resistor 24 and a second resistor 24, wherein the first resistor 24 is electrically coupled to the first impedance element 16 and the second resistor 24 is electrically coupled to the second impedance element (16), and the first and second resistors 24 are electrically coupled to each other.

[0082] According to one or more embodiments of this aspect, at least one resistor 24 includes at least a first resistor 24 and a second resistor 24, wherein the first resistor 24 is integrated with the first impedance element 16 and the second resistor 24 is integrated with the second impedance element 16, and the first and second resistors 24 are electrically coupled to each other.

[0083] According to one or more embodiments of this aspect, the circuit portion includes at least one of: at least one reactive element and at least one transmission line. According to one or more embodiments of this aspect, the circuit portion includes an inductive element 18, wherein the first resistor 24 is electrically coupled to the second resistor 24 through the inductive element 18. According to one or more embodiments of this aspect, the circuit portion electrically couples the first impedance element 16 in the first RF path 12 to the second impedance element 16 in the second RF path 12 using one or more bonding wires 18.

[0084] According to one or more embodiments of this aspect, the circuit portion includes capacitors 26, 30, wherein the first resistor 24 and the second resistor 24 are electrically coupled to ground through capacitance. According to one or more embodiments of this aspect, the circuit portion includes capacitors 26, 30, wherein the capacitors 26, 30 electrically couple the first impedance element 16 in the first RF path 12 to the second impedance element 16 in the second RF path 12. According to one or more embodiments of this aspect, the impedance element 16 is one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD.

[0085] According to one or more embodiments of this aspect, the first RF path 12 has an input and an output that are separate from an input and an output of the second RF path 12. According to one or more embodiments of this aspect, the at least one impedance element 16 corresponds to a plurality of impedance elements 16.

[0086] According to another aspect of the disclosure, a power amplifier 32 is provided. The power amplifier 32 includes a printed circuit board 11 and a transistor package 10 disposed on the printed circuit board 11. The transistor package 10 includes a first radio frequency RF path 12, the first radio frequency RF path 12 includes a first transistor carrier die 14 and at least a first impedance element 16 separated from the first transistor carrier die 14. The transistor package includes a second RF path 12, the second RF path 12 includes a second transistor carrier die 14 and at least a second impedance element 16 separated from the second transistor carrier die 14. The transistor package includes a circuit portion that electrically couples the first impedance element 16 in the first RF path 12 to the second impedance element 16 in the second RF path 12. The circuit portion includes at least one damping resistor 24 configured to suppress odd-mode signal components in the power amplifier 32. The first and second impedance elements 16 are one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD.

[0087] Some examples include:

[0088] Example A1. A transistor package 10 for a power amplifier, the transistor package comprising:

[0089] In each RF path 12 of a pair of RF paths 12:

[0090] a transistor-carrying die 14; and

[0091] at least one impedance element 16 spaced apart from the transistor-carrying die 14; and

[0092] A circuit portion that couples a first impedance element 16 in one RF path 12 to a corresponding second impedance element 16 in another RF path 12 has a first resistor 24 coupled to the first impedance element 16 and a second resistor 24 coupled to the second impedance element 16, the first resistor 24 being coupled to the second resistor 24 to suppress odd-mode signals.

[0093] Example A2. The transistor package 10 of Example A1, wherein the impedance element 16 includes a capacitor 26 coupled to ground of the transistor package 10 .

[0094] Example A3. The transistor package 10 of Example A1, wherein the first resistor 24 is coupled to the second resistor 24 via an inductor 28.

[0095] Example A4. The transistor package 10 of Example A1, wherein a plurality of impedance elements 16 are arranged in pairs, one impedance element 16 in the pair is in one RF path 12, and another corresponding impedance element 16 in the pair is in another RF path 12, and the impedance elements 16 in the pair are coupled by first and second resistors 24.

[0096] Example A5. The transistor package 10 of Example A4, wherein the first and second resistors 24 are coupled to ground at a center point via a capacitor 26.

[0097] Example A6. The transistor package 10 of Example A4, wherein the first and second resistors 24 are coupled via an inductor 28 with a capacitor shunted to ground of the transistor package 10 on each side of the inductor 28 .

[0098] Example A7. The transistor package 10 of any of Examples A1 and A4, wherein one RF path 12 has an input and an output that are separate from an input and an output of another RF path 12.

[0099] Example A8. The transistor package 10 of any of Examples A1, A4, and A7, wherein for each RF path 12 , the second bond wire inductors 28 , 17 are positioned in parallel but electrically configured in series, wherein the inductors are in series with the corresponding RF path 12 .

[0100] Example A9. The transistor package 10 of any of Examples A1, A4, and A7, wherein for each RF path 12 , the second bond pad capacitance 30 is coupled to the inductor 28 , 17 in series with the corresponding RF path 12 through the chip capacitance 15 .

[0101] Example A10. The transistor package 10 of Example A1, wherein the impedance element 16 to which the first and second resistors 24 are coupled comprises one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD.

[0102] Example B1. A power amplifier 32, comprising:

[0103] A transistor package 10 on a printed circuit board 11, the transistor package 10 comprising:

[0104] The first radio frequency RF path 12

[0105] a first die 14 supporting a first transistor; and

[0106] a first impedance element 16 spaced apart from the first die 14 , the first impedance element 16 providing a first shunt capacitance to ground of the transistor package 10 and providing a first resistance 24 ; and

[0107] in a second RF path 12 parallel to the first RF path 12;

[0108] a second die 14 supporting a second transistor; and

[0109] a second impedance element 16 spaced apart from the second die 14 , the second impedance element 16 providing a second shunt capacitance to ground of the transistor package 10 and providing a second resistor 24 coupled to the first resistor 24 ; and

[0110] The first and second resistors 24 are configured to suppress odd-mode signals in the power amplifier 32 .

[0111] Example B2. The power amplifier 32 of Example B1, wherein the first resistor 24 is coupled to the second resistor 24 via the inductor 28.

[0112] Example B3. The power amplifier 32 of Example B2, wherein there is an additional shunt capacitance to ground on each side of the inductor 28.

[0113] Example B4. The power amplifier 32 of any of Examples B1-B3, wherein the first resistor 24 is coupled to an impedance network including the first impedance element 16 and an additional inductor-capacitor LC network.

[0114] Example B5. The power amplifier 32 of Example B4, wherein the LC network includes a chip inductor 31 and a bonding pad capacitor 30.

[0115] Example B6. The power amplifier 32 of Example B1, wherein the first resistor 24 and the second resistor 24 are coupled at a point to which a third shunt capacitor 26 is coupled, the third shunt capacitor 26 being coupled to a ground of the transistor package 10 .

[0116] Example B7. The power amplifier 32 of any one of Examples B1-B6, wherein the first resistor 24 and the second resistor 34 are in a resistor-inductor-capacitor RLC network that is symmetrical with respect to a line passing between the first and second resistors 24 .

[0117] Example B8. The power amplifier 32 of Example B7, wherein the inductance of the RLC network is the bond wire inductance 28,17.

[0118] Example B9. The power amplifier 32 of Example B7, wherein the inductor of the RLC network is a chip inductor 31.

[0119] Example B10. The power amplifier 32 of Example B1, wherein the impedance element 16 to which the first and second resistors 24 are coupled includes one of a metal oxide semiconductor capacitor MOSCAP, a metal insulator metal capacitor MIMCAP, and an integrated passive device IPD.

[0120] Abbreviations that may be used in the preceding description include:

[0121] Abbreviations

[0122] DC Direct Current

[0123] IPD Integrated Passive Devices

[0124] MOSCAP Metal Oxide Semiconductor Capacitor

[0125] PA Power Amplifier

[0126] PCB Printed Circuit Board

[0127] RF

[0128] Those skilled in the art will appreciate that the embodiments described herein are not limited to what has been specifically shown and described herein above. In addition, unless otherwise mentioned above, it should be noted that all drawings are not drawn to scale. Various modifications and variations are possible based on the above teachings.

Claims

1. A transistor package for a power amplifier, the transistor package comprising: a plurality of radio frequency (RF) paths, the plurality of radio frequency (RF) paths comprising a first RF path and a second RF path, The first RF path comprises: a first transistor-carrying die; and at least a first impedance element; The second RF path includes: a second transistor-carrying die; and at least a second impedance element; and The transistor package includes a circuit portion that electrically couples a first impedance element in the first RF path to a second impedance element in the second RF path, the circuit portion including at least a first resistor and at least a second resistor that are electrically coupled to each other, the first resistor being integrated with the first impedance element and the second resistor being integrated with the second impedance element; the first resistor and the second resistor being configured to suppress odd-mode signal components associated with the first RF path and the second RF path.

2. The transistor package according to claim 1, wherein the circuit portion comprises at least one of the following: at least one reactive element; and At least one transmission line. 3 . The transistor package of claim 1 , wherein the circuit portion comprises an inductive element, the first resistor being electrically coupled to the second resistor through the inductive element. 4 . The transistor package of claim 1 , wherein the circuit portion electrically couples the first impedance element in the first RF path to the second impedance element in the second RF path using at least one bond wire. 5 . The transistor package of claim 3 , wherein the circuit portion comprises a capacitor, the first resistor and the second resistor being electrically coupled to ground via the capacitor.

6. The transistor package of claim 3, wherein the circuit portion comprises a capacitor that electrically couples the first impedance element in the first RF path to the second impedance element in the second RF path. 7 . The transistor package according to claim 1 , wherein the impedance element is one of a metal oxide semiconductor capacitor (MOSCAP), a metal insulator metal capacitor (MIMCAP), and an integrated passive device (IPD).

8. The transistor package of claim 1, wherein the first RF path has an input and an output that are separate from an input and an output of the second RF path.

9. The transistor package of claim 1, wherein the at least one impedance element corresponds to a plurality of impedance elements. 10 . The transistor package according to claim 1 , wherein the plurality of radio frequency (RF) paths include at least one RF path in addition to the first RF path and the second RF path.

11. A power amplifier, comprising: Printed circuit boards; as well as The transistor package according to any one of claims 1 to 10, wherein the transistor package is disposed on the printed circuit board.

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