Substrate processing method and substrate processing device

Abstract

The substrate processing method includes: a process of rotating the substrate around a central axis in the up-down direction (step S11); supplying gas to the central portion of one of the main surfaces of the upper and lower surfaces of the rotating substrate, and supplying a rinse liquid to the central portion of the other main surface of the substrate at a first flow rate and causing the rinse liquid to flow around the peripheral area of ​​the one main surface, thereby forming a gas-liquid interface between the gas and the rinse liquid on one main surface (step S13); and after step S13, supplying a chemical liquid to the central portion of the other main surface of the rotating substrate at a second flow rate smaller than the first flow rate and causing the chemical liquid to flow around the peripheral area of ​​the one main surface, thereby supplying the chemical liquid to the gas-liquid interface on one main surface to perform chemical liquid treatment on the peripheral area (step S15). As a result, the chemical liquid treatment of the peripheral area of ​​the substrate can be appropriately performed while suppressing liquid splashing of the chemical liquid.

Description

Technical Field

[0001] The invention relates to a substrate processing method and a substrate processing device. Background Art

[0002] In the past, in the manufacturing process of semiconductor substrates (hereinafter referred to as "substrates"), various treatments were performed on the substrates. For example, an etching liquid was supplied to the peripheral region (i.e., the inclined portion) of the substrate on which a film was formed on the surface to remove the film in the peripheral region. In JP Patent Publication No. 2010-93082 (Document 1) and JP Patent Publication No. 2017-59676 (Document 2), the main surface of the substrate on which the film was formed was directed upward, and an etching liquid was sprayed from a nozzle toward the peripheral region of the upper surface, thereby removing the film in the peripheral region from the substrate.

[0003] In addition, in JP Patent Publication No. 2003-273063 (Document 3), the main surface of the substrate on which the film is formed is directed downward, an etching liquid is supplied to the upper surface of the substrate and the etching liquid is flowed to the peripheral area of ​​the lower surface, thereby removing the film in the peripheral area from the substrate. In JP Patent Publication No. 2009-266951 (Document 4) and JP Patent Table No. 2008-546184 (Document 5), the vertical direction of the substrate to be etched in the peripheral area is opposite to that in Document 3.

[0004] Document 3 provides a technique for supplying a sealing gas to the central portion of the lower surface of the substrate to form a sealing gas flow along the lower surface toward the radially outer side, thereby controlling the flow width (i.e., etching width) of the etching liquid in the peripheral region of the lower surface of the substrate. Document 4 provides a technique for supplying DIW (De-ionized Water) to the lower surface before supplying the etching liquid to the lower surface of the substrate, thereby suppressing the anisotropic expansion of the etching liquid.

[0005] In addition, when a chemical is supplied to one of the upper and lower surfaces of a substrate and a peripheral area of ​​the other main surface is treated with a chemical, if the supply flow rate of the chemical is large, the chemical scattered from the rotating substrate to the surrounding area is rebounded by the cup portion, etc., and may adhere to the substrate. On the other hand, when the supply flow rate of the chemical is small, the flow width of the chemical flowing around the other main surface (i.e., the chemical treatment width) may be insufficient. In addition, when the supply flow rate of the chemical is small, the boundary between the gas supplied to the other main surface (the so-called sealing gas) and the chemical flowing around the other main surface is unstable, and the chemical treatment may also become unstable. Summary of the invention

[0006] The present invention provides a substrate processing method, the object of which is to appropriately perform a chemical liquid treatment on a peripheral region of a substrate while suppressing liquid splashing of the chemical liquid.

[0007] A preferred aspect of the substrate processing method of the present invention includes: a) a process of rotating a substrate held in a horizontal state around a central axis in the vertical direction; b) a process of supplying gas to the central portion of one of the upper and lower surfaces of the rotating substrate, and supplying a rinse liquid to the central portion of the other main surface of the substrate at a first flow rate and causing the rinse liquid to flow around the peripheral area of ​​the one main surface, thereby forming a gas-liquid interface between the gas and the rinse liquid on the one main surface; and c) after the process b), supplying a chemical liquid to the central portion of the other main surface of the rotating substrate at a second flow rate smaller than the first flow rate and causing the chemical liquid to flow around the peripheral area of ​​the one main surface, thereby supplying the chemical liquid on the one main surface to the gas-liquid interface to perform chemical liquid treatment on the peripheral area. According to the substrate processing method, chemical liquid treatment of the peripheral area of ​​the substrate can be appropriately performed while suppressing liquid splashing of the chemical liquid.

[0008] Preferably, the drug solution is a drug solution obtained by dissolving a solute in the flushing solution.

[0009] Preferably, the substrate processing method further includes a step d) between the step b) and the step c), in which the rinsing liquid is supplied to the central portion of the other main surface of the rotating substrate at a third flow rate that is smaller than the first flow rate, and the rinsing liquid is caused to flow toward the peripheral area of ​​the one main surface and supplied to the gas-liquid interface.

[0010] Preferably, the second flow rate of the chemical solution in the step c) is generated by dissolving a solute in the third flow rate of the rinse solution. Preferably, the rotation speed of the substrate is reduced between the steps b) and c) or in parallel with the start of the step c).

[0011] The present invention is also directed to a substrate processing device. A preferred form of the substrate processing device of the present invention comprises: a substrate holding portion that holds a substrate in a horizontal state; a substrate rotating mechanism that rotates the substrate holding portion around a central axis in the up-down direction; a gas supply portion that supplies gas to the central portion of one of the upper and lower surfaces of the rotating substrate; a rinse liquid supply portion that supplies rinse liquid to the central portion of the other main surface of the rotating substrate at a first flow rate and causes the rinse liquid to flow around the peripheral area of ​​the one main surface, thereby forming a gas-liquid interface between the gas and the rinse liquid on the one main surface; and a chemical liquid supply portion that supplies chemical liquid to the central portion of the other main surface of the rotating substrate at a second flow rate that is smaller than the first flow rate and causes the chemical liquid to flow around the peripheral area of ​​the one main surface, thereby supplying the chemical liquid on the one main surface to the gas-liquid interface to perform chemical liquid treatment on the peripheral area. According to the substrate processing device, chemical liquid treatment of the peripheral area of ​​the substrate can be appropriately performed while suppressing liquid splashing of the chemical liquid.

[0012] Preferably, between the supply of the rinsing liquid at the first flow rate by the rinsing liquid supply unit and the supply of the chemical solution by the chemical solution supply unit, the rinsing liquid supply unit supplies the rinsing liquid at a third flow rate that is smaller than the first flow rate to the central portion of the other main surface of the rotating substrate and makes the rinsing liquid flow toward the peripheral area of ​​the one main surface, and supplies the rinsing liquid to the gas-liquid interface.

[0013] Preferably, the drug solution supply unit includes a drug solution generating unit configured to generate the drug solution at the second flow rate by dissolving a solute in the flushing liquid at the third flow rate.

[0014] The above-mentioned object and other objects, features, aspects and advantages will become more apparent from the following detailed description of the present invention with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a side view showing the structure of a substrate processing apparatus according to one embodiment.

[0016] Figure 2 It is a block diagram showing a processing liquid supply unit and a gas supply unit.

[0017] Figure 3 is a bottom view showing the substrate.

[0018] Figure 4 This is a diagram showing an example of a process flow of a substrate.

[0019] Figure 5 is a cross-sectional view showing a part of the substrate.

[0020] Figure 6 is a cross-sectional view showing a part of the substrate.

[0021] Figure 7 is a cross-sectional view showing a part of the substrate. DETAILED DESCRIPTION

[0022] Figure 1 1 is a side view showing the structure of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-sheet type apparatus that processes semiconductor substrates 9 (hereinafter referred to as "substrates 9") one by one. The substrate processing apparatus 1 supplies a processing liquid to the substrate 9 for processing. Figure 1 In FIG. 1 , a part of the structure of the substrate processing apparatus 1 is shown in cross section.

[0023] The substrate processing apparatus 1 includes a substrate holding portion 31, a substrate rotating mechanism 33, a cup portion 4, a processing liquid supply portion 5, a gas supply portion 6, a control portion 7, and a housing 11. The substrate holding portion 31, the substrate rotating mechanism 33, the cup portion 4, etc. are accommodated in the internal space of the housing 11. Figure 1 In FIG. 1 , a housing 11 is depicted in cross section. An airflow forming section 12 for supplying gas to the internal space to form an airflow flowing downward (so-called downstream) is provided at the zenith of the housing 11. As the airflow forming section 12, for example, a FFU (fan / filter / unit) is used.

[0024] The control unit 7 is arranged outside the housing 11, and controls the substrate holding unit 31, the substrate rotating mechanism 33, the processing liquid supply unit 5, the gas supply unit 6, etc. The control unit 7 includes, for example, a conventional computer having a processor, a memory, an input / output unit, and a bus. The bus is a signal circuit connecting the processor, the memory, and the input / output unit. The memory stores programs and various information. The processor performs various processing (for example, numerical calculations) while utilizing the memory, etc., in accordance with the programs stored in the memory, etc. The input / output unit has a keyboard and a mouse for receiving input from an operator, a display for displaying output from the processor, etc., and a sending unit for sending output from the processor, etc.

[0025] The control unit 7 includes a storage unit 71 and a supply control unit 72. The storage unit 71 is mainly implemented by a memory, and stores various information such as the processing process of the substrate 9. The supply control unit 72 is mainly implemented by a processor, and controls the processing liquid supply unit 5 and the like according to the processing process stored in the storage unit 71 and the like.

[0026] The substrate holding part 31 is opposite to the lower main surface (i.e., the lower surface 92) of the horizontal substrate 9, and holds the substrate 9 from the lower side. The substrate holding part 31 is, for example, a mechanical chuck that mechanically supports the substrate 9. The substrate holding part 31 is configured to be rotatable around a central axis J1 in the vertical direction.

[0027] The substrate holding portion 31 includes a holding portion body and a plurality of (for example, six) chuck pins. The holding portion body is a roughly disk-shaped member that is opposite to the lower surface 92 of the substrate 9. A plurality of chuck pins are arranged at approximately equal angular intervals along the circumferential direction (hereinafter, also referred to as "circumferential direction") centered on the central axis J1 at the peripheral portion of the holding portion body. Each chuck pin protrudes upward from the upper surface of the holding portion body, contacts and supports the substrate 9 with a portion near the periphery and side of the lower surface 92 of the substrate 9. In the substrate processing device 1, for example, in the first half of the liquid treatment of the peripheral area of ​​the substrate 9 described later, three of the six chuck pins are used to hold the substrate 9, and in the second half of the liquid treatment, the remaining three chuck pins are used to hold the substrate 9. Thus, the uniformity of the liquid treatment of the peripheral area of ​​the substrate 9 in the circumferential direction can be improved. In addition, a plurality of chuck pins are also driven in the same manner when a rinse liquid is applied to the peripheral area of ​​the substrate 9.

[0028] The substrate rotating mechanism 33 is disposed below the substrate holding portion 31. The substrate rotating mechanism 33 rotates the substrate 9 together with the substrate holding portion 31 about the central axis J1. The substrate rotating mechanism 33 includes, for example, an electric rotary motor whose rotating shaft is connected to the holding portion body of the substrate holding portion 31. The substrate rotating mechanism 33 may also have other structures such as a hollow motor.

[0029] The processing liquid supply unit 5 supplies a plurality of processing liquids to the substrate 9 individually. The plurality of processing liquids include, for example, the chemical liquid and the rinse liquid described later. The processing liquid supply unit 5 has a first nozzle 51 and a second nozzle 52. The first nozzle 51 and the second nozzle 52 respectively supply the processing liquid from above the substrate 9 toward the central portion of the upper main surface of the substrate 9 (hereinafter referred to as the "upper surface 91") . The first nozzle 51 and the second nozzle 52 are formed, for example, by a resin having high chemical resistance, such as Teflon (registered trademark). In addition, the first nozzle 51 and the second nozzle 52 may each be a part of a common nozzle.

[0030] The cup portion 4 is an annular component centered on the central axis J1. The cup portion 4 is arranged around the substrate 9 and the substrate holding portion 31 over the entire circumference, covering the substrate 9 and the sides of the substrate holding portion 31. The cup portion 4 is a liquid receiving container that receives liquid such as a processing liquid that is scattered from the rotating substrate 9 to the surroundings. The inner surface of the cup portion 4 is formed of, for example, a hydrophobic material. The cup portion 4 is stationary in the circumferential direction regardless of the rotation and stillness of the substrate 9. A drain port (not shown) is provided at the bottom of the cup portion 4 for discharging the processing liquid received by the cup portion 4 to the outside of the housing 11. The cup portion 4 can be moved in the up and down directions as a lifting mechanism (not shown). Figure 1 The processing device moves between a processing position of the position around the substrate 9 shown and a retreat position below the processing position.

[0031] Cup 4 and Figure 1 Different from the single-layer structure shown, a stacked structure may be formed in which a plurality of cups are stacked in a radial direction (hereinafter simply referred to as "radial direction") centered on the central axis J1. When the cup portion 4 has a stacked structure, the plurality of cups can be independently moved in the up and down directions, and the plurality of cups can be switched to receive the processing liquid in accordance with the type of the processing liquid scattered from the substrate 9.

[0032] The gas supply unit 6 supplies gas to the substrate 9. The gas supply unit 6 has a third nozzle 63. The third nozzle 63 supplies gas from below the substrate 9 toward the lower surface 92 of the substrate 9. The third nozzle 63 is arranged inside the rotation axis of the substrate rotating mechanism 33, and extends upward through the holding portion body of the substrate holding portion 31. The ejection port at the upper end of the third nozzle 63 is opposed to the central portion of the lower surface 92 of the substrate 9 in the vertical direction.

[0033] Figure 2 1 is a block diagram showing a processing liquid supply unit 5 and a gas supply unit 6 of the substrate processing apparatus 1. Figure 2 2, the components other than the processing liquid supply unit 5 and the gas supply unit 6 are also shown. The processing liquid supply unit 5 includes a chemical liquid supply unit 54 and a rinse liquid supply unit 55.

[0034] The rinse liquid supply unit 55 includes a first nozzle 51, a second nozzle 52, and a mixing unit 545. The first nozzle 51 is connected to a rinse liquid supply source 551 via a pipe 552. The second nozzle 52 is connected to the rinse liquid supply source 551 via a pipe 542, a mixing unit 545, and a pipe 544. The first nozzle 51 and the second nozzle 52 are rinse liquid ejection units that eject the rinse liquid sent from the rinse liquid supply source 551 toward the upper surface 91 of the substrate 9. As the rinse liquid, for example, an aqueous treatment liquid such as DIW (De-ionized Water), carbonated water, ozone water, or hydrogen-rich water is used. In addition, the rinse liquid supply source 551 may be included in the rinse liquid supply unit 55.

[0035] The liquid medicine supply unit 54 includes a second nozzle 52 and a mixing unit 545. The second nozzle 52 is shared by the liquid medicine supply unit 54 and the rinse liquid supply unit 55. The second nozzle 52 is connected to the mixing unit 545 via the above-mentioned pipe 542. The mixing unit 545 is connected to the stock solution supply source 546 via the pipe 543, and is connected to the rinse liquid supply source 551 via the above-mentioned pipe 544.

[0036] In the mixing section 545, the drug stock solution (i.e., solute) delivered from the stock solution supply source 546 is dissolved in the rinse liquid (i.e., solvent) delivered from the rinse liquid supply source 551 to generate the drug solution. That is, the mixing section 545 is a drug solution generating section that generates the drug solution by dissolving the drug stock solution in the rinse liquid. The mixing section 545 has, for example, a static mixer that mixes the rinse liquid and the drug stock solution. The mixing section 545 may have various other liquid mixing devices. The drug solution generated by the mixing section 545 is supplied to the second nozzle 52 via the piping 542, and is sprayed from the second nozzle 52 toward the upper surface 91 of the substrate 9. In addition, the solvent that dissolves the drug stock solution does not necessarily have to be the rinse liquid, and may be a liquid of a different type from the rinse liquid. In addition, in Figure 2 In the example shown, one stock solution supply source 546 is connected to the mixing section 545 , but a plurality of stock solution supply sources 546 may be connected to the mixing section 545 so that a plurality of types of chemical stock solutions are supplied to the mixing section 545 .

[0037] In the processing liquid supply unit 5, in a state where the supply of the chemical stock solution from the stock solution supply source 546 is stopped, the rinse liquid is sent from the rinse liquid supply source 551 to the mixing unit 545, thereby spraying the rinse liquid from the second nozzle 52 toward the upper surface 91 of the substrate 9. The second nozzle 52 is a rinse liquid spraying unit that sprays the rinse liquid toward the upper surface 91 of the substrate 9, and is also a chemical liquid spraying unit that sprays the chemical liquid toward the upper surface 91 of the substrate 9. In addition, the stock solution supply source 546 may also be included in the chemical liquid supply unit 54.

[0038] The chemical solution and the rinse solution supplied from the second nozzle 52 to the upper surface 91 of the substrate 9 flow around the periphery of the substrate 9 to the lower surface 92 and are supplied to the peripheral region 93 of the lower surface 92 (see the following description). Figure 3 The chemical solution is, for example, an etching solution that etches and removes a portion of the thin film formed on substantially the entire surface of the lower surface 92 of the substrate 9 on the peripheral region 93 .

[0039] Figure 3 is a bottom view showing the substrate 9. Figure 3In order to facilitate the understanding of the drawings, parallel oblique lines are marked on the inner region 94 which is the radial inner region of the peripheral region 93 in the lower surface 92 of the substrate 9, and the boundary between the peripheral region 93 and the inner region 94 is shown by a two-dot chain line. The peripheral region 93 (i.e., the inclined portion) is a roughly annular region centered on the central axis J1. The inner region 94 is a roughly circular region centered on the central axis J1. On the lower surface 92 of the substrate 9, a structure (for example, a circuit pattern used in a product) which is a collection of a plurality of tiny structural elements is formed in advance in the inner region 94. The structure is not formed in the peripheral region 93. In this embodiment, the diameter and thickness of the substrate 9 are 300 mm and 775 μm, respectively. The longitudinal section of the periphery of the substrate 9 is roughly arc-shaped, and the radius of the periphery is 300 μm. The radial width of the peripheral region 93 is roughly constant in the circumferential direction, for example, 2 mm to 3 mm.

[0040] In the case where the thin film on the lower surface 92 of the substrate 9 is a polycrystalline silicon film, a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO3), concentrated hydrofluoric acid, dilute hydrofluoric acid, ammonium hydroxide (NH4OH), TMAH (tetramethylammonium hydroxide), or SC1 (i.e., a mixed aqueous solution of ammonia (NH3) and hydrogen peroxide (H2O2)) is used as the chemical solution. In the case where the thin film on the lower surface 92 of the substrate 9 is a film of titanium nitride (TiN), tantalum (Ta), titanium (Ti) or tungsten (W), SC2 (i.e., a mixed aqueous solution of hydrogen chloride (HCl) and hydrogen peroxide) or FPM (i.e., a mixed aqueous solution of hydrogen fluoride and hydrogen peroxide) is used as the chemical solution. In the case where the thin film on the lower surface 92 of the substrate 9 is a silicon oxide (SiO2) film, dilute hydrofluoric acid or FPM is used as the chemical solution.

[0041] like Figure 2 As shown, the gas supply unit 6 has a third nozzle 63. The third nozzle 63 is connected to a gas supply source 65 via a pipe 64. The third nozzle 63 is a gas ejection unit that ejects the gas sent from the gas supply source 65 toward the central portion of the lower surface 92 of the substrate 9. As the gas, an inert gas such as nitrogen (N2) gas, or dry air, etc. is used. In addition, the gas supply source 65 can be included in the gas supply unit 6.

[0042] Next, refer to Figure 4The processing of the substrate 9 in the substrate processing device 1 is described. In the substrate processing device 1, first, the substrate 9 having a film formed on substantially the entire surface of the lower surface 92 is held in a horizontal state by the substrate holding portion 31. Next, the rotation of the substrate 9 is started by the substrate rotating mechanism 33 (step S11). Then, the gas supply portion 6 is controlled by the supply control portion 72, whereby a gas (for example, nitrogen gas) is ejected from the third nozzle 63 relative to the rotating substrate 9. The gas from the third nozzle 63 is supplied to the central portion of the lower surface 92 of the substrate 9 and diffuses radially outward along the lower surface 92 of the substrate 9 (step S12). Thus, in the lower surface 92 of the substrate 9, a gas flow of the above-mentioned gas that tends from the central portion to the radially outward is formed over the entire circumference.

[0043] Next, the supply control unit 72 controls the rinse liquid supply unit 55, thereby spraying the rinse liquid from the first nozzle 51 at a predetermined flow rate (for example, 1000 ml / min to 2000 ml / min, also referred to as the "first flow rate" in the following description) relative to the rotating substrate 9. In this embodiment, DIW is used as the rinse liquid. In addition, the rotation speed of the substrate 9 is, for example, 800 rpm. Figure 5 As shown in FIG. 1 , the rinse liquid 81 from the first nozzle 51 is supplied to the central portion of the upper surface 91 of the substrate 9, and the upper surface 91 of the substrate 9 is expanded radially outward by centrifugal force. The rinse liquid 81 reaching the periphery of the substrate 9 flows around the lower surface 92 via the periphery and is supplied to the peripheral region 93. On the substrate 9, a continuous liquid film of the rinse liquid 81 is formed from the central portion of the upper surface 91 to the peripheral region 93 of the lower surface 92. In addition, Figure 5 In FIG. 1 , the thickness of the substrate 9 and the like is drawn larger than the size in the radial direction. In addition, the width in the radial direction of the peripheral region 93 is drawn larger than the actual width. Figure 6 as well as Figure 7 Same.

[0044] The movement of the rinsing liquid 81 flowing around the lower surface 92 of the substrate 9 to the radial inside is stopped by the gas flow 82 tending to the radial outside mentioned above. In the lower surface 92 of the substrate 9, an interface (hereinafter referred to as "gas-liquid interface 83") between the rinsing liquid 81 and the gas flow 82 (that is, the above-mentioned gas) is formed on the boundary between the peripheral area 93 and the inner area 94 (that is, the inner periphery of the peripheral area 93) (step S13). The shape of the gas-liquid interface 83 when viewed from above is roughly circular with the central axis J1 as the center. The rinsing liquid 81 of the first flow rate is supplied to the substrate 9 for a predetermined time (for example, 5 seconds), thereby stabilizing the radial position of the gas-liquid interface 83 on the lower surface 92 of the substrate 9.

[0045] When the formation of the gas-liquid interface 83 in step S13 is completed, the supply control unit 72 controls the rinse liquid supply unit 55, thereby stopping the discharge of the rinse liquid 81 from the first nozzle 51 and discharging the rinse liquid 81 from the second nozzle 52 relative to the rotating substrate 9 at a predetermined flow rate (for example, 300 ml / min to 800 ml / min, also referred to as the "third flow rate" in the following description) that is smaller than the flow rate of the rinse liquid 81 in step S13. In other words, the discharge of the rinse liquid 81 from the first nozzle 51 is switched to the discharge of the rinse liquid 81 at a small flow rate from the second nozzle 52. As described above, the rinse liquid 81 is supplied from the rinse liquid supply source 551 to the second nozzle 52 via the mixing unit 545. In the present embodiment, as described above, DIW is used as the rinse liquid 81. In addition, the rotation speed of the substrate 9 is reduced to be slightly slower than that in step S13 (for example, 700 rpm).

[0046] like Figure 6 As shown, the rinse liquid 81 from the second nozzle 52 is supplied to the central portion of the upper surface 91 of the substrate 9, and in step S13, the rinse liquid 81 is formed on the substrate 9. Figure 5 ) merge, and use centrifugal force to expand radially outward on the upper surface 91 of the substrate 9. The rinsing liquid 81 that has reached the periphery of the substrate 9 flows around the periphery to the lower surface 92 and is supplied to the peripheral area 93. The rinsing liquid 81 that has flowed around the lower surface 92 of the substrate 9 reaches the above-mentioned gas-liquid interface 83, and contacts the gas flow 82 at the gas-liquid interface 83 (step S14). In other words, in step S14, the radial position of the gas-liquid interface 83 is maintained, and the flow rate of the rinsing liquid 81 supplied to the upper surface 91 of the substrate 9 is reduced.

[0047] In this substrate processing method, the gas-liquid interface 83 is stably formed by the rinse liquid 81 having a relatively large flow rate in step S13, and the radial position of the liquid interface 83 is maintained even if the flow rate of the rinse liquid 81 is reduced in step S14. Then, the rinse liquid is continuously supplied from the second nozzle 52 to the substrate 9 for a predetermined time (for example, 3 seconds), thereby making it possible to stabilize the radial position of the gas-liquid interface 83 even when the rinse liquid 81 having a relatively small flow rate is supplied to the upper surface 91 of the substrate 9.

[0048] Next, the supply control unit 72 controls the chemical liquid supply unit 54, thereby sending the chemical liquid stock solution from the stock liquid supply source 546 to the mixing unit 545. In the mixing unit 545, the chemical liquid stock solution is dissolved in the rinse liquid supplied from the rinse liquid supply source 551 to the mixing unit 545, thereby generating the above-mentioned chemical liquid. The chemical liquid is ejected from the second nozzle 52 relative to the rotating substrate 9. The flow rate of the rinse liquid supplied from the rinse liquid supply source 551 to the mixing unit 545 is, for example, the same as the flow rate in step S14. In this case, the flow rate of the chemical liquid supplied to the substrate 9 (also referred to as "second flow rate" in the following description) is the sum of the flow rate of the rinse liquid in step S14 and the flow rate of the chemical liquid stock solution from the stock liquid supply source 546. In addition, when the flow rate of the chemical liquid stock solution added to the rinse liquid in the mixing unit 545 is very small compared with the above-mentioned flow rate of the rinse liquid, the flow rate of the chemical liquid supplied to the substrate 9 is substantially the same as the flow rate of the rinse liquid in step S14. The rotation speed of the substrate 9 during the supply of the chemical solution is, for example, the same as that in step S14.

[0049] like Figure 7 As shown, the chemical solution 84 is supplied from the second nozzle 52 to the central portion of the upper surface 91 of the substrate 9, and the liquid film of the rinse liquid 81 formed on the substrate 9 in step S14 (see Figure 6 ) merge, and utilize centrifugal force to expand radially outward on the upper surface 91 of the substrate 9. The chemical solution 84 that has reached the periphery of the substrate 9 flows around to the lower surface 92 via the periphery and is supplied to the peripheral area 93. The chemical solution 84 that has flowed around the lower surface 92 of the substrate 9 reaches the above-mentioned gas-liquid interface 83, and contacts the airflow 82 at the gas-liquid interface 83 (step S15). In other words, in step S15, the radial position of the gas-liquid interface 83 is maintained, and the liquid film of the rinse liquid 81 on the upper surface 91 and the lower surface 92 of the substrate 9 is replaced with the chemical solution 84. Then, the chemical solution 84 is continuously supplied to the substrate 9 for a specified time, thereby performing chemical liquid treatment (for example, etching treatment based on an etching solution) relative to the peripheral area 93.

[0050] When the chemical liquid treatment is completed, the chemical liquid supply unit 54 and the rinse liquid supply unit 55 are controlled by the supply control unit 72, thereby, the rinse liquid is sprayed from the first nozzle 51 to the rotating substrate 9 almost simultaneously with the stopping of the discharge of the chemical liquid from the second nozzle 52. In other words, the discharge of the chemical liquid from the second nozzle 52 is switched to the discharge of the rinse liquid from the first nozzle 51. Thus, the upper surface 91 and the lower surface 92 of the substrate 9 are rinsed (step S16). When the rinse treatment is completed, the supply of the rinse liquid is stopped, and the substrate 9 is dried (step S17). In the drying treatment, the rotation speed of the substrate 9 is increased, and the processing liquid remaining on the substrate 9 is scattered radially outward from the edge of the substrate 9 by centrifugal force, and is removed from the substrate 9. The chemical liquid and the processing liquid such as the rinse liquid that are scattered radially outward from the substrate 9 in the above steps S13 to S17 are received by the cup 4 and discharged to the outside of the housing 11. The substrate 9 after the drying treatment is carried out from the substrate processing device 1. In the substrate processing apparatus 1 , the processes of steps S11 to S17 described above are performed on the plurality of substrates 9 .

[0051] exist Figure 1 In the illustrated substrate processing apparatus 1, as described above, a processing liquid (i.e., a rinse liquid and a chemical liquid) is supplied to the upper surface 91 of the substrate 9, and a gas is supplied to the lower surface 92 of the substrate 9, thereby performing a chemical liquid treatment on the peripheral region 93 of the lower surface 92, but the treatment with respect to the substrate 9 may be reversed up and down. Specifically, in the substrate processing apparatus 1, the first nozzle 51 and the second nozzle 52 are arranged opposite to the lower surface 92 of the substrate 9, and the third nozzle 63 is arranged opposite to the upper surface 91 of the substrate 9. In addition, in step S12, a gas is supplied to the central portion of the lower surface 92 of the substrate 9, and in steps S13 to S16, a rinse liquid or a chemical liquid is supplied to the central portion of the upper surface 91 of the substrate 9. Then, a gas-liquid interface 83 is formed at the boundary between the peripheral region 93 of the upper surface 91 of the substrate 9 and the inner region 94, and a chemical liquid treatment is performed on the peripheral region 93 of the upper surface 91.

[0052] As described above, the substrate processing method includes: a process of rotating the substrate 9 maintained in a horizontal state around the central axis J1 in the up-down direction (step S11); supplying gas to the central portion of one of the upper surface 91 and the lower surface 92 of the rotating substrate 9 (for example, the lower surface 92), and supplying a rinse liquid to the central portion of the other main surface (for example, the upper surface 91) of the substrate 9 at a first flow rate and flowing around to the peripheral area 93 of the above-mentioned one main surface, thereby forming a gas-liquid interface 83 between the gas and the rinse liquid on the one main surface (step S13); after step S13, supplying a chemical liquid to the central portion of the above-mentioned other main surface of the rotating substrate 9 at a second flow rate smaller than the first flow rate and flowing around to the peripheral area 93 of the above-mentioned one main surface, thereby supplying a chemical liquid on the one main surface to the gas-liquid interface 83 to perform a chemical liquid treatment on the peripheral area 93 (step S15).

[0053] In this way, when the peripheral region 93 is treated with a chemical liquid, the flow rate of the chemical liquid supplied to the substrate 9 is set to a relatively small flow rate (i.e., the second flow rate), thereby preventing the chemical liquid that is scattered around the substrate 9 from being rebounded by the cup portion 4 and attached to the substrate 9 (so-called liquid splashing). In addition, after the peripheral region 93 is treated with a chemical liquid, a relatively large flow rate (i.e., the first flow rate) of a rinse liquid is supplied to the substrate 9 to form a gas-liquid interface 83 on the inner periphery of the peripheral region 93 in advance, thereby, even if the flow rate of the chemical liquid is a relatively small flow rate, the chemical liquid reaches the inner periphery of the peripheral region 93 and is applied to the entire peripheral region 93. Therefore, the chemical liquid treatment of the peripheral region 93 of the substrate 9 can be appropriately performed while preventing the liquid splashing of the chemical liquid. In addition, assuming that the second flow rate of the chemical solution is supplied to the central portion of the upper surface 91 of the substrate 9 without forming the gas-liquid interface 83 in step S13, it is difficult for the chemical solution to reach the inner periphery of the peripheral area 93 throughout the entire circumference, thereby making it difficult to stably form the gas-liquid interface 83 on the inner periphery.

[0054] As described above, the chemical solution is preferably a chemical solution obtained by dissolving a solute (for example, a chemical solution stock solution) in a rinsing liquid. In this way, the chemical solution is generated using the rinsing liquid used when processing the substrate 9, thereby making it easy to generate the chemical solution. In addition, the structure of the processing liquid supply unit 5 in the above-mentioned substrate processing device 1 can be simplified. Moreover, since the solvent of the chemical solution is a liquid of the same type as the liquid film of the rinsing liquid formed on the substrate 9 in step S14, it is also possible to easily replace the rinsing liquid on the substrate 9 with the chemical solution in step S15.

[0055] Preferably, the above-mentioned substrate processing method further includes the following step between step S13 and step S15: supplying the rinsing liquid at a third flow rate smaller than the first flow rate relative to the central portion of the other main surface (e.g., upper surface 91) of the rotating substrate 9 and flowing around the peripheral area 93 of the one main surface (e.g., lower surface 92), and supplying the rinsing liquid until the gas-liquid interface 83 (step S14). Thus, the liquid film of the rinsing liquid on the substrate 9 can be thinned. As a result, when the rinsing liquid is replaced with the drug liquid in step S15, the mixed liquid of the drug liquid and the rinsing liquid can be prevented from being rebounded by the cup portion 4 and adhering to the substrate 9 and the like.

[0056] As described above, the second flow rate of the chemical solution in step S15 is preferably generated by dissolving a solute in the third flow rate of the rinse liquid. Thus, when transitioning from step S14 to step S15, it is not necessary to change the flow rate of the rinse liquid, thereby simplifying the processing of the substrate 9. In addition, in the substrate processing apparatus 1, the control of the chemical solution supply unit 54 by the supply control unit 72 can be simplified.

[0057] In the above-mentioned substrate processing method, it is preferred to reduce the rotation speed of the substrate 9 between step S13 and step S15. Thus, in step S15, it is easy to replace the rinse liquid on the substrate 9 with the chemical liquid. In addition, when the chemical liquid treatment of the substrate 9 is performed, the liquid splashing of the chemical liquid can be further suppressed. As described above, in the case where the rotation speed of the substrate 9 is reduced between step S13 and step S14, when the rinse liquid with a relatively small flow rate is supplied in step S14, it is easy to maintain the radial position of the gas-liquid interface 83 on the inner periphery of the peripheral area 93. In addition, the reduction of the rotation speed of the substrate 9 can also be performed simultaneously with the start of step S15. In this case, as described above, in step S15, it is easy to replace the rinse liquid on the substrate 9 with the chemical liquid. In addition, when the chemical liquid treatment of the substrate 9 is performed, the liquid splashing of the chemical liquid can be further suppressed.

[0058] The substrate processing device 1 includes a substrate holding portion 31, a substrate rotating mechanism 33, a gas supply portion 6, a rinse liquid supply portion 55, and a liquid medicine supply portion 54. The substrate holding portion 31 holds the substrate 9 in a horizontal state. The substrate rotating mechanism 33 rotates the substrate holding portion 31 around a central axis J1 in the up-down direction. The gas supply portion 6 supplies gas to the central portion of one of the upper surface 91 and the lower surface 92 of the rotating substrate 9 (for example, the lower surface 92). The rinse liquid supply portion 55 supplies rinse liquid to the central portion of the other main surface (for example, the upper surface 91) of the rotating substrate 9 at a first flow rate and causes it to flow around the peripheral area 93 of the above-mentioned one main surface, thereby forming a gas-liquid interface 83 between the gas and the rinse liquid on the one main surface. The chemical liquid supply unit 54 supplies the chemical liquid to the central portion of the other main surface of the rotating substrate 9 at a second flow rate smaller than the first flow rate, and the chemical liquid flows around to the peripheral area 93 of the one main surface, thereby supplying the chemical liquid to the gas-liquid interface 83 on the one main surface and performing chemical liquid treatment on the peripheral area 93. Thus, similarly to the above, the chemical liquid treatment on the peripheral area 93 of the substrate 9 can be appropriately performed while suppressing liquid splashing of the chemical liquid.

[0059] Various modifications can be made to the above-mentioned substrate processing method and substrate processing apparatus 1 .

[0060] For example, in step S15 , the flow rate of the rinse liquid supplied from the rinse liquid supply source 551 to the mixing unit 545 is not necessarily the same as the flow rate of the rinse liquid in step S14 , and may be appropriately changed.

[0061] The rotation speed of the substrate 9 is not necessarily reduced between step S13 and step S15. For example, the rotation speeds of the substrate 9 in steps S13 to S15 may be the same.

[0062] The flow rate reduction of the flushing liquid in step S14 is not necessarily performed, and after step S13 is completed, step S14 may be omitted and step S15 may be performed.

[0063] In the substrate processing apparatus 1, the chemical liquid is not necessarily generated in the mixing unit 545, and the chemical liquid may be delivered from a chemical liquid supply source storing the chemical liquid generated in advance to the second nozzle 52. In this case, the mixing unit 545 may be omitted.

[0064] In the substrate processing apparatus 1, the rinsing liquid discharge in step S14 may be performed by the first nozzle 51. In addition, the rinsing liquid discharge in steps S13 and S14 and the chemical liquid discharge in step S15 may also be performed by the same nozzle.

[0065] The substrate processing device 1 can be used for processing glass substrates used in flat panel displays such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, or glass substrates used in other display devices, in addition to semiconductor substrates. In addition, the substrate processing device 1 can also be used for processing optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, and solar cell substrates.

[0066] The configurations in the above-described embodiment and each modified example can be appropriately combined as long as they do not contradict each other.

[0067] The invention has been described in detail above, but the above description is for illustrative purposes only and has no limiting effect. Therefore, various modifications and aspects can be implemented without departing from the scope of the present invention.

[0068] Description of Reference Numerals

[0069] 1Substrate processing device

[0070] 6Gas supply unit

[0071] 9 substrates

[0072] 31 substrate holding part

[0073] 33 substrate rotation mechanism

[0074] 54 Liquid supply unit

[0075] 55 flushing liquid supply unit

[0076] 81 Flushing fluid

[0077] 82 Airflow

[0078] 83 Gas-Liquid Interface

[0079] 84 liquid medicine

[0080] 91 Upper surface

[0081] 92 lower surface

[0082] 93 peripheral areas

[0083] 545 Mixing Department

[0084] J1 center axis

[0085] Steps S11 to S17.

Claims

1. A substrate processing method, characterized in that: include: a) rotating the substrate held in a horizontal state about a central axis in the vertical direction; b) supplying gas to the central portion of one of the upper and lower surfaces of the rotating substrate, and supplying a rinse liquid to the central portion of the other main surface of the substrate at a first flow rate and causing the rinse liquid to flow toward the peripheral region of the one main surface, thereby forming a gas-liquid interface between the gas and the rinse liquid on the one main surface; as well as c) continuously supplying a chemical solution to the central portion of the other main surface of the rotating substrate at a second flow rate smaller than the first flow rate with b) and causing the chemical solution to flow around the peripheral area of ​​the one main surface, thereby supplying the chemical solution on the one main surface to the gas-liquid interface to perform chemical solution treatment on the peripheral area, The drug solution is a drug solution obtained by dissolving a solute in the flushing solution.

2. The substrate processing method according to claim 1, characterized in that: Between the step b) and the step c), or in parallel with the start of the step c), the rotation speed of the substrate is reduced.

3. A substrate processing device, characterized in that: have: a substrate holding portion for holding the substrate in a horizontal state; a substrate rotating mechanism for rotating the substrate holding portion around a central axis extending in the vertical direction; a gas supply unit for supplying gas to a central portion of one of the main surfaces of the upper surface and the lower surface of the rotating substrate; a rinse liquid supply unit that supplies rinse liquid at a first flow rate to a central portion of the other main surface of the rotating substrate and causes the rinse liquid to flow around a peripheral region of the one main surface, thereby forming a gas-liquid interface between the gas and the rinse liquid on the one main surface; as well as A liquid medicine supplying section supplies the rinsing liquid to the other main surface of the substrate continuously at a second flow rate smaller than the first flow rate to the central portion of the other main surface of the rotating substrate and causes the liquid medicine to flow toward the peripheral area of ​​the one main surface, thereby supplying the liquid medicine to the gas-liquid interface on the one main surface to perform liquid medicine treatment on the peripheral area. The drug solution supply unit includes a drug solution generating unit configured to generate the drug solution at the second flow rate by dissolving a solute in the rinse solution at the third flow rate.

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