Displacement measurement system

Abstract

The present invention provides a displacement measurement system, comprising: a sensor portion, which is configured to be able to contact the object to be measured, and includes a first spacer with an extension width of at least one dimension, and two or more light-emitting particles distributed throughout the extension width of the first spacer and having different wavelengths of light emitted by excitation energy; an excitation energy source, which causes the two or more light-emitting particles included in the sensor portion to emit light; and a light receiving portion, which receives the light emitted from the sensor portion.

Description

Technical Field

[0001] The present invention relates to a displacement measuring system, in particular to a displacement measuring system for measuring micro displacement and pressure. Background Art

[0002] Conventionally, as a system for measuring displacement or pressure, a structure in which a plurality of thin film transistors are combined with a pressure sensitive resin is known.

[0003] Pressure-sensitive resin is a resin in which conductive particles are dispersed in an insulating resin such as silicone rubber. In the pressure-sensitive resin, when pressure is applied, the conductive particles in the insulating resin come into contact with each other, thereby reducing the resistance value. Thus, the pressure applied to the pressure-sensitive resin can be detected. Multiple thin-film transistors are arranged in a matrix and function as electrodes.

[0004] In addition, there is also known a pressure sensor in which a pressure-sensitive layer and a plurality of electrodes are arranged opposite to each other with a given gap therebetween (for example, see Patent Document 1). For example, in the technology described in Patent Document 1, independent electrodes having different gaps between the pressure-sensitive layer and the electrodes are arranged in a matrix, thereby expanding the pressure measurement range and enabling measurement over a large area.

[0005] Prior Art Literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent No. 6322247 Summary of the invention

[0008] A displacement measuring system according to one embodiment of the present invention includes:

[0009] A sensor portion is provided so as to be in contact with the object to be measured, the sensor portion comprising: a first spacer having at least one-dimensional extension width, and two types of light-emitting particles distributed throughout the extension width of the first spacer and emitting light of different wavelengths by excitation energy;

[0010] Exciting an energy source to cause the two luminescent particles included in the sensor portion to emit light; and

[0011] The light receiving unit receives light emitted from the sensor unit.

[0012] A displacement measuring system according to one embodiment of the present invention includes:

[0013] A sensor portion, arranged to be in contact with an object to be measured, comprising: a first light-emitting particle layer in which first light-emitting particles emitting light at a first wavelength by excitation energy are distributed over at least one-dimensional extension width, a second light-emitting particle layer in which second light-emitting particles emitting light at a second wavelength different from the first wavelength by excitation energy are distributed over the extension width, and a second spacer layer separating the first light-emitting particle layer from the second light-emitting particle layer in a direction intersecting the extension width;

[0014] Exciting an energy source to cause the first light-emitting particle and the second light-emitting particle included in the sensor portion to emit light;

[0015] a light receiving unit that receives light emitted from the sensor unit; and

[0016] The image analysis unit measures a displacement of the object to be measured that is in contact with the sensor unit based on the wavelength distribution of the light emission obtained by receiving light. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram showing the configuration of the displacement measurement system according to the first embodiment.

[0018] Figure 2 This is a schematic diagram showing the structure of Modification 1 of the displacement measurement system according to Embodiment 1.

[0019] Figure 3 This is a schematic diagram showing the structure of Modification 2 of the displacement measurement system according to Embodiment 1.

[0020] Figure 4 This is a schematic diagram showing the structure of a displacement measurement system according to the second embodiment.

[0021] Figure 5 This is a schematic diagram showing the structure of a third modification of the displacement measurement system according to the second embodiment.

[0022] Description of Reference Numerals

[0023] 10, 10a, 10b, 10c, 10d: displacement measurement system;

[0024] 11: the first luminescent particle layer;

[0025] 12: second luminescent particle layer;

[0026] 100: Excite energy source;

[0027] 200: sensor unit;

[0028] 211: luminescent particle, first luminescent particle;

[0029] 212: 1st spacer;

[0030] 212a: second spacer layer;

[0031] 213: luminescent particle, second luminescent particle;

[0032] 214: luminescent particle, second luminescent particle;

[0033] 220: support body;

[0034] 230: anode substrate;

[0035] 240: cathode substrate;

[0036] 300: light emitting and light receiving element;

[0037] 400: Image analysis unit. DETAILED DESCRIPTION

[0038] In the above-mentioned conventional structure, since independent electrodes with different gaps are arranged, a certain pressing area is required, and it is difficult to measure a small area. In addition, since independent electrodes are arranged, there is a problem of complicated circuits in order to measure a sample with a wide measurement area.

[0039] The present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide a displacement or pressure measurement system capable of simply evaluating displacement measurement or pressure measurement in a micro region.

[0040] A displacement measuring system according to a first aspect includes:

[0041] A sensor portion is provided so as to be in contact with the object to be measured, the sensor portion comprising: a first spacer having at least one-dimensional extension width, and two or more light-emitting particles distributed throughout the extension width of the first spacer and emitting light of different wavelengths by excitation energy;

[0042] Exciting an energy source to cause the two or more light-emitting particles included in the sensor portion to emit light; and

[0043] The light receiving unit receives light emitted from the sensor unit.

[0044] According to the above configuration, displacement or pressure in a micro region can be measured.

[0045] In the displacement measurement system according to a second aspect, in the first aspect, a light emission spectrum of one of the two or more light emitting particles may overlap with an excitation spectrum of another light emitting particle.

[0046] In the displacement measurement system according to a third aspect, in the first or second aspect, at least one of semiconductor nanoparticles and organic pigments may be used as the two or more light-emitting particles.

[0047] A displacement measuring system according to a fourth aspect may further include, in any one of the first to third aspects, an image analyzing unit configured to measure a displacement of the object to be measured in contact with the sensor unit based on a wavelength distribution of the light emission obtained by receiving light.

[0048] A displacement measuring system according to a fifth aspect includes:

[0049] A sensor portion is provided so as to be in contact with an object to be measured, the sensor portion comprising: a first light-emitting particle layer in which first light-emitting particles emitting light at a first wavelength by excitation energy are distributed over an extended width of at least one dimension, a second light-emitting particle layer in which second light-emitting particles emitting light at a second wavelength different from the first wavelength by excitation energy are distributed over the extended width, and a second spacer layer separating the first light-emitting particle layer from the second light-emitting particle layer in a direction intersecting the extended width;

[0050] Exciting an energy source to cause the first light-emitting particle and the second light-emitting particle included in the sensor portion to emit light;

[0051] a light receiving unit that receives light emitted from the sensor unit; and

[0052] The image analysis unit measures a displacement of the object to be measured that is in contact with the sensor unit based on the wavelength distribution of the light emission obtained by receiving light.

[0053] A displacement measurement system according to a sixth aspect may be configured such that, in the fifth aspect, a light emission spectrum of one of the first light emitting particle and the second light emitting particle overlaps with an absorption spectrum of the other light emitting particle.

[0054] In the displacement measurement system according to a seventh aspect, in the fifth or sixth aspect, at least one of semiconductor nanoparticles and organic pigments may be used as the first light-emitting particles and the second light-emitting particles.

[0055] The displacement measuring system according to an eighth aspect is characterized in that, in any one of the first to seventh aspects, the excitation energy may be at least one of light energy and electric energy.

[0056] A pressure measurement system according to a ninth aspect uses the displacement measurement system according to any one of the first to eighth aspects.

[0057] Hereinafter, a displacement measurement system according to an embodiment will be described with reference to the accompanying drawings. In the accompanying drawings, substantially the same components are denoted by the same reference numerals.

[0058] (Implementation Method 1)

[0059] Figure 1 1 is a schematic diagram showing the structure of the displacement measuring system 10 according to Embodiment 1. In the drawings, for convenience, the plane showing the in-plane extension width of the sensor unit 200 is defined as the XY plane, the right side of the paper is defined as the X direction, and the vertically upward direction is defined as the Z direction.

[0060] exist Figure 1 In the embodiment, the displacement measurement system 10 includes an excitation energy source 100, a sensor unit 200, a light emitting and light receiving element 300, and an image analysis unit 400. The sensor unit 200 is configured to be in contact with the object to be measured, and includes a first spacer 212 having at least one-dimensional extension width and two or more light emitting particles 211 and 213 with different wavelengths distributed throughout the extension width of the first spacer 212 and emitting light by excitation energy. The two or more light emitting particles 211 and 213 included in the sensor unit 200 emit light by the excitation energy source 100. The light emitting from the sensor unit 200 is received by the light emitting and light receiving element 300.

[0061] According to the displacement measuring system 10, the sensor unit 200 includes two or more light-emitting particles 211 and 213 having different light-emitting wavelengths distributed over at least one-dimensional extension width. Therefore, based on the light emission wavelength distribution, the change in the distance between the two or more light-emitting particles 211 and 213 can be detected, and the displacement or pressure in a micro region can be measured.

[0062] In addition, the sensor unit 200 may be supported by a support body 220 .

[0063] Hereinafter, each member constituting the displacement measuring system 10 will be described.

[0064] <Sensor section>

[0065] The sensor unit 200 is provided to be in contact with the object to be measured and includes a first spacer 212 having at least one-dimensional expansion width and two or more light-emitting particles 211 and 213 distributed over the expansion width of the first spacer 212 and emitting light of different wavelengths by excitation energy.

[0066] The thickness of the sensor portion 200 is preferably greater than 1 nm and less than 100,000 nm. It is more preferably greater than 1 nm and less than 50,000 nm, and further preferably greater than 3 nm and less than 10,000 nm. If it is thinner than 1 nm, the change in the distance between the light-emitting particles 211 and 213 required for the sensor cannot be ensured. If it is thicker than 100,000 nm (100 μm), the change in the distance between the particles caused by the displacement of the object to be measured in contact with the sensor is difficult to occur throughout the entire sensor portion, and it cannot function as a sensor.

[0067] <First Spacer>

[0068] The first spacer 212 has at least one-dimensional expansion width. Figure 1 In the embodiment of the present invention, the first spacer 212 has a two-dimensional expansion width. In addition, light-emitting particles 211 and 213 are dispersed in the first spacer 212 .

[0069] The first spacer is not particularly limited as long as it is compressed by pressure and does not hinder light emission from the light emitting particles 211 and 213. For example, silicone resin, polyvinyl chloride, polyurethane, polyvinyl alcohol, polypropylene, polyacrylamide, polycarbonate, polyethylene terephthalate, etc. can be used.

[0070] The thickness of the first spacer 212 is substantially the same as the thickness of the sensor unit 200 , and is preferably 1 nm to 100,000 nm, more preferably 1 nm to 50,000 nm, and even more preferably 3 nm to 10,000 nm.

[0071] <Luminous Particles>

[0072] The light-emitting particles 211 and 213 include two or more types of light-emitting particles 211 and 213 that emit light at different wavelengths due to excitation energy.

[0073] As light-emitting particles 211 and 213, semiconductor nanoparticles with cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, copper indium sulfide, silver indium sulfide, indium phosphide, etc. as the core, perovskite-type semiconductor nanoparticles such as cesium lead halide, semiconductor nanoparticles with silicon, carbon, etc. as the core, organic pigments such as merocyanine and dinaphthylidene, etc. can be used.

[0074] The particle size of the two or more luminescent particles 211 and 213 can be any particle size that allows the semiconductor nanoparticles to obtain a quantum size effect, preferably 1 nm or more and 100 nm or less. More preferably 1 nm or more and 50 nm or less. Even if the raw material of the organic pigment is in powder form, there is no effect caused by the particle size of the raw material powder.

[0075] The two or more light-emitting particles 211 and 213 are substantially uniformly dispersed in the first spacer 212 over at least one-dimensional expansion width. Figure 1 , distributed substantially uniformly throughout two dimensions.

[0076] <Support>

[0077] The support 220 is not particularly limited as long as it is a material that is easy to handle and does not hinder the light emission from the light emitting particles 211 and 213. For example, polyethylene terephthalate, polyacrylamide, polycarbonate, etc. can be used. However, if there is no problem in the operation of the sensor unit 200, the support 220 is not necessarily a necessary structure.

[0078] <Excitation Energy Source>

[0079] There is no particular limitation on the excitation energy source 100 as long as it is an excitation energy source that can excite the light-emitting particles 211 and 213 included in the sensor unit 200. For example, light energy or electrical energy can be used. In addition, in order to evaluate the entire observation range, it is necessary to uniformly supply excitation energy to the light-emitting particles 211 and 213 through the excitation energy source 100.

[0080] <Light-emitting and light-receiving elements>

[0081] There are no particular restrictions on the light-emitting and light-receiving element 300 as long as it is a light-receiving element that can receive light changes in the light-emitting behavior of the light-emitting particles 211 and 213. In particular, a CCD, CMOS, image sensor, etc. that can evaluate the entire observation range can be used. By using these, the light-emitting behavior within the observation range can be instantaneously analyzed.

[0082] Furthermore, when a light energy source is used as the excitation energy source, in order to improve the detection sensitivity in the light emitting and receiving element 300 , it is preferable to use a wavelength cutoff filter to suppress the influence of the wavelength of the excitation energy source 100 .

[0083] <Image Analysis Section>

[0084] In addition, an image analysis unit 400 may be further provided for measuring the displacement of the object to be measured in contact with the sensor unit 200 based on the wavelength distribution of the light emitted by the light received. Preferably, the image analysis unit 400 analyzes the image obtained by chromaticity and brightness, and can calculate the coordinates of the chromaticity difference and brightness difference with the surrounding. In the image analysis unit 400, the displacement of the object to be measured in contact with the sensor unit 200 is measured based on the wavelength distribution of the light emitted by the light received. Specifically, the change in the distance between the two light-emitting particles 211 and 213 can be detected by the obtained wavelength distribution of the light, and the displacement or pressure in a small area can be measured. The details of the principle of displacement measurement will be described later.

[0085] In the displacement measuring system 10 , the excitation energy source 100 and the light emitting and receiving element 300 are arranged in an oblique direction with respect to the plane of the sensor unit 200 . However, the above arrangement is an example and is not particularly limited.

[0086] Next, the principle of displacement measurement in the displacement measurement system according to the first embodiment will be described.

[0087] As two or more luminescent particles with different luminescent wavelengths, consider the situation where there is an overlap between the fluorescence spectrum (luminescence spectrum) of one luminescent particle (donor) and the excitation spectrum (absorption spectrum) of the other luminescent particle (acceptor). In this case, it is known that there is such a behavior that: if two luminescent particles with different luminescent wavelengths are close, the excitation energy excites the acceptor before the donor excited by the excitation energy emits light. This behavior is called Förster resonance energy transfer (FRET), and the behavior of the wavelength distribution of the luminescence spectrum of two luminescent particles depends on the distance between the two luminescent particles. In particular, if the FRET efficiency is the ratio of the number of energy transfers per donor excitation number, the FRET efficiency is inversely proportional to the sixth power of the distance between the two luminescent particles. Therefore, even a slight change in distance has a great impact on the change in the luminescence spectrum.

[0088] In the displacement measurement system 10, the sensor unit 200 is set on the object to be measured using the aforementioned principle, and by applying a certain load, when there are tiny bumps and depressions on the object to be measured, the load on the sensor unit 200 is different only at the bumps and depressions and from other parts. As a result, for the bumps and depressions of the object to be measured, the compression amount of the corresponding part of the sensor unit 200 changes compared with other parts, that is, the distance between the two luminescent particles changes only at the bumps and depressions. According to the change in the distance between the two luminescent particles, the luminescent spectrum changes according to the FRET effect. Therefore, by measuring the luminescent spectra of the two luminescent particles, the change in the luminescent spectrum generated at the bumps and depressions in the surface can be converted into a change in the distance between the two luminescent particles, that is, the displacement of the object to be measured.

[0089] Furthermore, before measuring the object to be measured, a model serving as a reference may be measured, and the relationship between minute concavo-convex portions and displacement may be measured based on the difference between the measurement based on the object to be measured and the measurement based on the reference model.

[0090] However, in order to calculate the amount of displacement, it is necessary to measure the change in the emission spectrum in advance using known materials with different displacements.

[0091] In addition, Figure 1In the figure, the two luminescent particles 211 and 213 are shown to be evenly arranged in the first spacer 212, but in fact, the distance between the two luminescent particles is not uniform, and can be considered to be ideally normally distributed with the average distance as the center. Therefore, depending on the distance between the luminescent particles, the luminescent spectrum change will also have a wide distribution.

[0092] Here, the case where both the donor and the acceptor of two or more luminescent particles use semiconductor nanoparticles is described. Semiconductor nanoparticles are nanometer-sized particles with semiconductor crystals, and have the characteristic that the luminescence spectrum changes according to the particle diameter through the quantum size effect. In addition, it is a particle with the characteristic that the luminescence spectrum changes even if the particle diameter is the same, if the material is different, a variety of luminescence spectra can be achieved.

[0093] In addition, in the case of the same particle diameter and different material systems, the side with a larger energy gap of the material itself shows light emission on the short wavelength side. Let the semiconductor nanoparticle with a light emission wavelength on the short wavelength side be semiconductor nanoparticle A, and let the semiconductor nanoparticle with a light emission wavelength on the long wavelength side be semiconductor nanoparticle B. In a state where the distance between the two semiconductor nanoparticles is sufficiently separated, semiconductor nanoparticle A and semiconductor nanoparticle B show their respective light emission spectra. In the case where the distance between the semiconductor nanoparticles is close due to the object to be measured, semiconductor nanoparticles A and B are excited according to the distance, and before semiconductor nanoparticle A emits light, energy transfer from semiconductor nanoparticle A to semiconductor nanoparticle B occurs, and the energy that should be emitted from semiconductor nanoparticle A is used for the light emission of semiconductor nanoparticle B. As a result, the light emission spectrum intensity of semiconductor nanoparticle A decreases, and the light emission spectrum of semiconductor nanoparticle B increases. That is, in the overall light emission spectrum of the two semiconductor nanoparticles, there is a wavelength distribution as follows: the light emission spectrum intensity of semiconductor nanoparticle A on the short wavelength side is reduced compared with the case of a single body, and the light emission spectrum intensity of semiconductor nanoparticle B on the long wavelength side is enhanced compared with the case of a single body. The behavior of the wavelength distribution in the overall emission spectrum changes depending on the distance between the two semiconductor nanoparticles A and B.

[0094] Therefore, based on the wavelength distribution of the light emission spectrum within the surface of the sensor portion, the change in the distance between the two types of semiconductor nanoparticles A and B, that is, the displacement of the object to be measured can be calculated.

[0095] Furthermore, the pressure received from the object to be measured may be calculated instead of the displacement of the object to be measured, based on the wavelength distribution of the light emission spectrum within the surface of the sensor unit.

[0096] (Variant 1)

[0097] Figure 2This is a schematic diagram showing the structure of Modification 1 of the displacement measurement system according to Embodiment 1.

[0098] The displacement measurement system 10a of the modification example 1 is different from the displacement measurement system of the embodiment 1 in that the two light-emitting particles 211 and 214 are made of the same material but have different particle diameters. When the particles are made of the same material but have different particle diameters, the particle with the smaller particle diameter emits light at a shorter wavelength due to the quantum size effect. Figure 2 In the figure, the light-emitting particle 211 with a small particle diameter has a light-emitting wavelength on the short wavelength side, and the light-emitting particle 214 with a large particle diameter has a light-emitting wavelength on the long wavelength side. When semiconductor nanoparticles are used as the light-emitting particles, the light-emitting particle 211 with a small particle diameter is equivalent to the semiconductor nanoparticle A on the short wavelength side, and the light-emitting particle 214 with a large particle diameter is equivalent to the semiconductor nanoparticle B on the long wavelength side. As described above, energy transfer occurs according to the inter-particle distance between the semiconductor nanoparticle A on the short wavelength side and the semiconductor nanoparticle B on the long wavelength side, and the wavelength distribution of the light-emitting spectrum changes.

[0099] Therefore, based on the wavelength distribution of the light emission spectrum within the surface of the sensor portion, the change in the distance between the two types of semiconductor nanoparticles A and B, that is, the displacement of the object to be measured can be calculated.

[0100] Furthermore, when an organic dye is used as the light-emitting particle, the displacement of the object to be measured can be detected based on the same principle.

[0101] As mentioned above, if produce FRET phenomenon, then reduce the luminescent particle of short wavelength side luminescence or the luminescent spectrum of pigment molecule, and strengthen the luminescent particle of long wavelength side luminescence or the luminescent spectrum of pigment molecule.The luminescent peak wavelength of short wavelength side and the luminescent peak wavelength of long wavelength side are preferably separated more than 10nm.More preferably more than 30nm.If luminescent peak wavelength is near than 10nm, then the luminescent peak intensity of the spectrum that luminescent intensity is low overlaps with the spectrum of another, becomes difficult to detect the variation of wavelength distribution in luminescent spectrum.

[0102] Furthermore, in order to detect minute changes in wavelength distribution in the emission spectrum, the distance between the two types of light-emitting particles needs to be constant, and when dispersing the two types of light-emitting particles in the resin material constituting the first spacer 212 , high-concentration uniform dispersion is required.

[0103] (Variant 2)

[0104] Figure 3 This is a schematic diagram showing the structure of Modification 2 of the displacement measurement system according to Embodiment 1.

[0105] The displacement measurement system according to Modification 2 is different from the displacement measurement system according to Embodiment 1 in that an electric energy source 110 is used as an excitation energy source.

[0106] like Figure 3 As shown, when the electric energy source 110 is used, for example, the sensor unit 200 is sandwiched between the anode substrate 230 and the cathode substrate 240 to apply a voltage to the sensor unit 200, thereby applying electric energy. In this case, the sensor unit 200 can be stacked on the anode substrate 230, and the cathode substrate 240 can be stacked thereon.

[0107] The anode substrate 230 is preferably a substrate that does not block the light emission from the light emitting particles 211 and 213, and for example, ITO or the like can be used. In addition, the cathode substrate 240 can be made of aluminum or the like.

[0108] In addition, the structure of the sensor unit 200 can use the structure of the first embodiment and the modified example 1, and thus the description thereof is omitted.

[0109] (Implementation Method 2)

[0110] Figure 4 2 is a schematic diagram showing the structure of a displacement measuring system according to Embodiment 2. Figure 4 In Figure 1 The same components are denoted by the same reference numerals, and description thereof will be omitted.

[0111] The displacement measurement system 10 c according to the second embodiment is different from the displacement measurement system according to the first embodiment in that two types of first light-emitting particles 211 and second light-emitting particles 213 constitute the first light-emitting particle layer 11 and the second light-emitting particle layer 12 , respectively.

[0112] like Figure 2As shown, the displacement measurement system 10c includes an excitation energy source 100, a sensor unit 200, a light emitting and light receiving element 300, and an image analysis unit 400. The sensor unit 200 is configured to be in contact with the object to be measured. In addition, the sensor unit 200 includes a first light emitting particle layer 11, a second spacer layer 212a, and a second light emitting particle layer 12. In the first light emitting particle layer 11, the first light emitting particles 211 that emit light at a first wavelength by excitation energy are distributed over at least one-dimensional extension width. In the second light emitting particle layer 12, the second light emitting particles 213 that emit light at a second wavelength different from the first wavelength by excitation energy are distributed over the above extension width. The first light emitting particle layer 11 and the second light emitting particle layer 12 are separated by the second spacer layer 212a in a direction intersecting the above extension width. The first light emitting particle layer 11 and the second light emitting particle 213 included in the sensor unit 200 emit light by the excitation energy source 100. The light emitted from the sensor unit is received by the light emitting and receiving element 300. The image analyzing unit 400 measures the displacement of the object to be measured in contact with the sensor unit 200 based on the wavelength distribution of the light emitted by the received light.

[0113] In the second embodiment, the excitation energy source 100 , the light emitting and receiving element 300 , and the image analyzing unit 400 are the same components as those in the first embodiment, and thus their description is omitted.

[0114] The sensor portion of the second embodiment includes: a first light-emitting particle layer 11 including a first light-emitting particle 211 that emits light at a first wavelength, a second light-emitting particle layer 12 including a second light-emitting particle 211 that emits light at a second wavelength, a second spacer layer 212a, and a support body 220. As a layer structure, the first light-emitting particle layer 11 and the second light-emitting particle layer 12 are arranged opposite to each other with the second spacer layer 212a interposed therebetween. That is, the second spacer layer 212a is arranged between the particles on the donor side and the particles on the acceptor side. In other words, in a state where the particles are not displaced, the particles on the donor side and the particles on the acceptor side are separated by the thickness of the second spacer layer 212a.

[0115] Thus, the distance between the particles on the donor side and the particles on the acceptor side can be defined by the thickness of the second spacer layer 212 a , rather than by a distribution centered around an average distance as in the first embodiment.

[0116] <Second Spacer Layer>

[0117] The thickness of the second spacer layer 212a is preferably 1 nm or more and 1000 nm or less. More preferably, it is 1 nm or more and 500 nm or less. More preferably, it is 3 nm or more and 300 nm or less. If it is thinner than 1 nm, the change in the distance between the two light-emitting particles cannot be ensured, and it cannot be used as a sensor. In the second embodiment, the thickness of the second spacer layer 212a is 1000 nm or less, which is sufficient to be established as a sensor.

[0118] The method for manufacturing the second spacer layer 212 a is not particularly limited, and for example, a method capable of controlling a thin film such as a layer-by-layer (LBL) method or a spin coating method can be used.

[0119] Here, the so-called LBL method is a method that enables thin film control by alternately adsorbing cationic polymers and anionic polymers by electrostatic force.

[0120] There are no particular restrictions on the material of the second spacer layer 212a, but some restrictions are imposed according to the process used. For example, in the LBL method, cationic polymers such as polyallylamine and polydiallyldimethylammonium chloride, polyacrylic acid, polystyrene sulfonic acid, polyisoprene sulfonic acid, and anionic polymers can be used. In addition, in the spin coating method, if the material is soluble in a solvent, there are no particular restrictions, and the above-mentioned ionic polymers, silicone resins, polyvinyl chloride, polyurethane, polyvinyl alcohol, polypropylene, polyacrylamide, polycarbonate, polyethylene terephthalate, etc. can be used.

[0121] By controlling the thickness of the second spacer layer 212 a , the distance between the two types of light-emitting particles that emit light within the plane can be arbitrarily controlled.

[0122] In addition, since the principle of displacement measurement by the sensor unit 200 is the same as that of the first embodiment, the description thereof will be omitted.

[0123] (Variant 3)

[0124] Figure 5 This is a schematic diagram showing the structure of a third modification of the displacement measurement system according to the second embodiment.

[0125] The displacement measurement system 10d is different from the displacement measurement system according to Embodiment 2 in that the second light-emitting particles 214 are made of the same material as the first light-emitting particles 211 and have different particle diameters.

[0126] In addition, the principle of displacement measurement based on the second spacer layer 212 a and the sensor unit 200 is the same as that of the second embodiment, and thus the description thereof is omitted.

[0127] In addition, the present disclosure includes a case where any of the aforementioned embodiments and / or examples are appropriately combined, and the effects possessed by the respective embodiments and / or examples can be exerted.

[0128] [Industrial Applicability]

[0129] The displacement measuring system according to the present invention can easily measure displacement or pressure in a micro region. The displacement measuring system according to the present invention can also be used to measure micro scratches and unevenness of optical lenses, precision machined parts, and the like.

Claims

1. A displacement measuring system for measuring the concavity and convexity of an object to be measured, comprising: A sensor portion is provided so as to be in contact with the object to be measured, the sensor portion comprising: a first spacer having at least one-dimensional extension width, and two or more light-emitting particles distributed throughout the extension width of the first spacer and emitting light of different wavelengths by excitation energy; a load device for applying a certain load to the sensor portion, and when the object to be measured has minute irregularities, causing the load on the sensor portion to be reflected on the irregularities; Exciting an energy source to cause the two or more light-emitting particles included in the sensor portion to emit light; as well as The light receiving unit receives light emitted from the sensor unit.

2. The displacement measuring system according to claim 1, wherein: The luminescence spectrum of one of the two or more luminescent particles overlaps with the excitation spectrum of another luminescent particle.

3. The displacement measuring system according to claim 1 or 2, wherein: As the two or more light-emitting particles, at least one of semiconductor nanoparticles and organic pigments is used.

4. The displacement measuring system according to claim 1 or 2, wherein: The displacement measuring system further includes an image analyzing unit configured to measure a displacement of the object to be measured that is in contact with the sensor unit based on a wavelength distribution of the light emission obtained by receiving light.

5. A displacement measuring system for measuring the concavity and convexity of an object to be measured, comprising: A sensor portion is provided so as to be in contact with the object to be measured, the sensor portion comprising: a first light-emitting particle layer in which first light-emitting particles emitting light at a first wavelength by excitation energy are distributed over an extended width of at least one dimension, a second light-emitting particle layer in which second light-emitting particles emitting light at a second wavelength different from the first wavelength by excitation energy are distributed over the extended width, and a second spacer layer separating the first light-emitting particle layer from the second light-emitting particle layer in a direction intersecting the extended width; a load device for applying a certain load to the sensor portion, and when the object to be measured has minute irregularities, causing the load on the sensor portion to be reflected on the irregularities; Exciting an energy source to cause the first light-emitting particle and the second light-emitting particle included in the sensor portion to emit light; a light receiving unit for receiving light emitted from the sensor unit; as well as The image analysis unit measures a displacement of the object to be measured that is in contact with the sensor unit, based on a wavelength distribution of the light emission obtained by receiving light.

6. The displacement measuring system according to claim 5, wherein: The light emission spectrum of one of the first light emitting particle and the second light emitting particle overlaps with the absorption spectrum of the other light emitting particle.

7. The displacement measuring system according to claim 5 or 6, wherein: As the first light-emitting particles and the second light-emitting particles, at least one of semiconductor nanoparticles and organic pigments is used.

8. The displacement measuring system according to any one of claims 1, 2, 5 and 6, wherein: The excitation energy is at least one of light energy and electrical energy. 9 . A pressure measurement system using the displacement measurement system according to claim 1 .

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