Etching equipment

Abstract

The invention relates to an etching device, which comprises an etching chamber, an opening and closing unit for opening and closing the etching chamber, and a locking unit for selectively constraining the opening and closing unit.

Description

Technical Field

[0001] The invention relates to an etching device capable of improving etching performance. Background Art

[0002] Silicon nitride film is used as a representative insulating film in semiconductor manufacturing processes. The silicon nitride film has a structure in contact with a silicon oxide film, a polysilicon film, a silicon object surface, etc. It is deposited by a CVD (Chemical vapor deposition) process and is removed by a dry etching device and a wet etching device.

[0003] Dry etching by dry etching equipment mainly involves adding fluorine gas and inert gas, etc., and is performed in a vacuum state. The equipment used to perform dry etching is expensive, so there are limits in terms of commercial application. Therefore, wet etching using phosphoric acid is more widely used than dry etching.

[0004] The wet etching method of the wet etching device is to selectively etch the desired object layer in the object (substrate, etc.) through the chemical reaction of the etching solution. The etching solution with a matching ratio can be simply mixed according to the required characteristics or etching degree, and the operation is carried out. It provides further improved operation compatibility than dry etching, can process a large number of objects at one time, and the device is low in price.

[0005] This wet etching device is composed of an etching chamber that can be opened and closed and in which an object is placed, an etching liquid supply unit for supplying etching liquid to the etching chamber, a cleaning liquid supply unit for supplying cleaning liquid to the etching chamber, and a driving unit for opening and closing the etching chamber.

[0006] However, in the conventional wet etching apparatus, during the etching process, a high pressure acts on the etching chamber while the inside of the etching chamber is maintained in a pressurized atmosphere, and thus a strong sealing structure is required so that the sealing state of the etching chamber remains unchanged.

[0007] In addition, when the conventional wet etching device is etching, part of the etching liquid vaporizes, and the temperature of the object body will drop due to the heat of vaporization. Due to the vaporization of the etching liquid, it is difficult to control the concentration of the etching liquid, and thus losses occur. Therefore, in order to maintain the concentration of the etching liquid at a predetermined level, a large amount of deionized water and etching liquid is now being added to the etching tank to perform etching of the object body. The economic losses are increased due to the large amount of deionized water and etching liquid added.

[0008] As a prior art document related to the present invention, there is Korean Patent No. 10-0691479 (February 28, 2007), which discloses an etching apparatus for a large-area substrate. Summary of the invention

[0009] Technical issues solved

[0010] The invention provides an etching device capable of improving etching performance.

[0011] Technical Solution

[0012] The etching device of the present invention is characterized in that it comprises an etching chamber, an opening and closing unit for opening and closing the etching chamber, and a locking unit for selectively constraining the opening and closing unit.

[0013] In addition, the locking unit can move between a restraining position for restraining the movement of the opening and closing unit and a releasing position for releasing the restraint.

[0014] In addition, the opening and closing unit may include: a chamber opening and closing portion that selectively opens the etching chamber; and an opening and closing driving portion that drives the chamber opening and closing portion.

[0015] Furthermore, the invention may further include a first guide portion for guiding the movement of the chamber opening and closing portion.

[0016] Furthermore, the method may further include a pressure maintaining unit for maintaining the etching chamber in a pressurized atmosphere.

[0017] In addition, the pressure maintaining unit may include: a pressurizing unit that maintains the etching chamber at a set pressure; and an exhaust unit that exhausts the gas inside the etching chamber to the outside.

[0018] In addition, the locking unit can constrain the opening and closing unit so that the etching chamber with pressurized atmosphere is closed, and when the pressurized atmosphere is released, the constraint of the opening and closing unit can be released.

[0019] In addition, the invention may further include: a first restraining portion provided on the opening and closing unit; and a second restraining portion provided on the locking unit and cooperating with the first restraining portion to restrain the movement of the opening and closing unit.

[0020] Furthermore, a second guide portion for guiding the movement of the second restraining portion may be further provided.

[0021] In addition, the pressurization maintaining unit can maintain the pressure in the chamber unit at 0.1 bar to 10 bar.

[0022] The etching chamber may further include an etching liquid supply unit that supplies the etching liquid to the etching chamber.

[0023] In addition, the etching solution can selectively use at least one of hydrofluoric acid (HF), nitric acid (NHO3), hydrogen peroxide (H2O2), isopropyl alcohol (IPA), ammonia water (NH4OH), water (H2O), phosphoric acid (H3PO4), and sulfuric acid (H2SO4), or a mixture of more than one of them.

[0024] Effects of the Invention

[0025] The etching apparatus according to one embodiment of the present invention is constrained in a closed position of the etching chamber, thereby preventing the etching chamber from opening due to high pressure when the etching chamber is maintained in a pressurized atmosphere.

[0026] Furthermore, by maintaining the interior of the etching chamber in a pressurized atmosphere during etching, vaporization can be prevented, the concentration of the etching solution can be maintained at a predetermined level, and the etching selectivity can be improved.

[0027] In addition, since the concentration of the etching solution is kept constant, there is no need to add additional deionized water or etching solution to maintain the concentration of the etching solution, which can improve the product recovery rate and reduce the consumption of etching solution, thereby greatly saving costs in terms of economy.

[0028] Furthermore, since etching is performed while the object is immersed in the etching liquid, a thicker liquid film of the etching liquid can be formed, thereby improving etching performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0030] Figure 1 It is a perspective view showing an etching device according to one embodiment of the present invention.

[0031] Figure 2 It is a front view showing a state where a second chamber of an etching device according to an embodiment of the present invention is opened.

[0032] Figure 3 It is a front view for showing the closed state of the second chamber of the etching device according to one embodiment of the present invention.

[0033] Figure 4 FIG. 1 is a side view showing a state where a second chamber of an etching device according to an embodiment of the present invention is opened.

[0034] Figure 5 FIG. 1 is a side view showing a closed state of a second chamber of an etching device according to an embodiment of the present invention.

[0035] Figure 6 It is a front cross-sectional view for showing a closed state of a second chamber of an etching device according to an embodiment of the present invention.

[0036] Figure 7 It is a stereoscopic view for showing a second chamber, a first nozzle, and a second nozzle of an etching device according to an embodiment of the present invention.

[0037] Figure 8The figure is a bottom view showing a second chamber, a first nozzle and a second nozzle of an etching device according to an embodiment of the present invention.

[0038] Fig. 9 It is a three-dimensional view for showing a first nozzle and a second nozzle of an etching device according to an embodiment of the present invention.

[0039] Fig.10 This is a structural diagram for showing the connection structure between the etching liquid supply part, the rinse liquid supply part and the cleaning liquid supply part of the etching device according to one embodiment of the present invention.

[0040] Fig.11 This is a structural diagram for showing the connection structure between the etching liquid supply part, the rinse liquid supply part, the cleaning liquid supply part and the pressurized storage part of the etching device according to one embodiment of the present invention.

[0041] Fig.12 It is a front cross-sectional view showing an etching device according to another embodiment of the present invention.

[0042] Fig.13 It is a front cross-sectional view for illustrating a process of supplying an object after the second chamber of an etching device according to another embodiment of the present invention is opened.

[0043] Fig.14 It is a perspective view of a bracket for showing an etching device according to another embodiment of the present invention.

[0044] Fig.15 It is a three-dimensional view for showing a lifting portion of an etching device according to another embodiment of the present invention.

[0045] Fig.16 It is a block diagram for illustrating the operation of the etching apparatus according to the embodiment of the present invention.

[0046] Fig.17 It is a block diagram for illustrating an etching process in an etching device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0047] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0048] If you refer to the following and attached Figure 1 The advantages and features of the present invention and methods for achieving the same will become clear with the detailed description of the embodiments.

[0049] However, the present invention is not limited to the embodiments disclosed below, but can be embodied in various different forms. However, this embodiment is provided to make the disclosure of the present invention more complete and to fully inform the scope of the invention to those having ordinary knowledge in the technical field to which the present invention belongs. The present invention is only defined by the scope of the claims.

[0050] Furthermore, in describing the present invention, when it is determined that related conventional technologies may obscure the gist of the present invention, detailed descriptions thereof will be omitted.

[0051] Figure 1 is a perspective view of an etching device for showing an embodiment of the present invention, Figure 2 is a front view showing the second chamber of an etching device according to an embodiment of the present invention in an open state, Figure 3 This is a front view showing the closed state of the second chamber of the etching device according to one embodiment of the present invention. Figure 4 is a side view showing the open state of the second chamber of the etching device according to one embodiment of the present invention, Figure 5 is a side view showing a closed state of a second chamber of an etching device according to an embodiment of the present invention, Figure 6 It is a front cross-sectional view for showing a closed state of a second chamber of an etching device according to an embodiment of the present invention.

[0052] Figure 7 is a three-dimensional diagram for showing a second chamber, a first nozzle, and a second nozzle of an etching device according to an embodiment of the present invention. Figure 8 1 is a bottom view showing a second chamber, a first nozzle and a second nozzle of an etching device according to an embodiment of the present invention. Fig. 9 It is a three-dimensional view for showing a first nozzle and a second nozzle of an etching device according to an embodiment of the present invention.

[0053] Fig.10 This is a structural diagram for showing the connection structure between the etching liquid supply part, the rinsing liquid supply part and the cleaning liquid supply part of the etching device according to one embodiment of the present invention. Fig.11 The present invention is a structural diagram for showing the connection structure between the etching liquid supply unit, the rinse liquid supply unit, the cleaning liquid supply unit and the pressurized storage unit of an etching device according to an embodiment of the present invention. Fig.12 It is a front cross-sectional view showing an etching device according to another embodiment of the present invention.

[0054] Fig.13 is a front cross-sectional view for illustrating a process of supplying an object after the second chamber of an etching device according to another embodiment of the present invention is opened, Fig.14 is a perspective view of a bracket for showing an etching device according to another embodiment of the present invention, Fig.15 It is a three-dimensional view for showing a lifting portion of an etching device according to another embodiment of the present invention.

[0055] If reference Figures 1 to 15 An etching device according to an embodiment of the present invention includes an etching chamber 100 , an opening and closing unit 200 , and a locking unit 300 .

[0056] The etching chamber 100 is configured to be openable and closable, and a high-temperature etching solution (phosphoric acid: H3PO4, etc.) L1, a normal-temperature rinsing solution (phosphoric acid: H3PO4, etc.) L2, and a cleaning solution (water, etc.) L3 can be selectively supplied to the internal pressure chamber 101. The pressure chamber 101 can be maintained in a pressurized atmosphere by a pressurizing unit 800 described later.

[0057] In an etching device according to an embodiment of the present invention, the etching liquid L1 and the rinsing liquid L2 are not limited, and various types can be used. The etching liquid L1 and the rinsing liquid L2 according to an embodiment of the present invention can selectively use at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4, or a mixture of more than one.

[0058] The etching chamber 100 may include a first chamber 110 and a second chamber 120 which is openably and closably provided at the top of the first chamber 110. A pressure chamber 101 of a predetermined area is formed between the first chamber 110 and the second chamber 120. A first connecting portion 111 may be vertically penetrated at the bottom of the first chamber 110 for coupling with a rotating shaft 420 described later, and a second connecting portion 112 may be vertically penetrated for coupling with a lifting pin 530 described later.

[0059] In addition, a receiving portion 123 may be formed at the upper portion of the first chamber 110 to be recessed downward, and brackets 401 and 402 for placing the object W may be arranged at the upper portion of the receiving portion 123. An inclined portion 124 may be formed on the bottom surface of the receiving portion 123 to be inclined downward along the edge.

[0060] The inclined portion 124 may have an angle that allows the etching liquid L1, rinsing liquid L2, and cleaning liquid L3 that fall on the upper portion to move to the edge, and a discharge portion 125 may be formed at the lower portion of the first chamber 110 for discharging the etching liquid L1, rinsing liquid L2, and cleaning liquid L3 contained in the containing portion 123 to the outside, and the discharge portion 125 may be connected to an external storage portion (not shown in the figure).

[0061] The second chamber 120 can be combined with or separated from the upper part of the first chamber 110 to open and close the pressure chamber 101, and is formed with an etching liquid inlet 121 so that when combined with the first chamber 110, the etching liquid L1 is supplied to the inside of the pressure chamber 101. The etching liquid inlet 121 can be horizontally penetrated at the side of the second chamber 120 to connect the pressure chamber 101 with the outside, and the etching liquid supply part 600 can be connected to the etching liquid inlet 121 through the connection part 610.

[0062] The etching liquid supply part 600 can supply the etching liquid L1 at a high temperature through the etching liquid inlet 121 , and the second chamber 120 can be configured to be able to be raised and lowered to a closed position at the bottom and an open position at the top through the opening and closing unit 200 .

[0063] The etching liquid supply unit 600 of one embodiment of the present invention can circulate the etching liquid L1 supplied to the pressure chamber 101 to the outside and then resupply it through the etching liquid inlet 121. The etching liquid supply unit 600 can be equipped with a storage chamber, a heater, a valve, a pump, etc., and the etching liquid supply unit 600 can also be equipped with a temperature control unit for adjusting the temperature of the etching liquid L1.

[0064] The etching liquid supply unit 600 can supply the etching liquid L1 and the rinsing liquid L2, and can constitute another rinsing liquid supply unit 650. At this time, the rinsing liquid supply unit 650 can inject the rinsing liquid L2 into the pressure chamber 101 through the etching liquid injection port 121 or another rinsing liquid injection port.

[0065] The storage chamber can store the etching liquid L1 at a predetermined pressure, and can be connected to the etching liquid inlet 121 through the connection part 610. The heater can be installed in the storage chamber to heat the etching liquid L1 to a set temperature. The valve can be installed in the connection part 610 to make the open and closed state variable, and the pump can transmit the suction pressure in the state of being connected to the connection part 610.

[0066] In addition, the second chamber 120 may be formed with a cleaning liquid inlet 122 so that a cleaning liquid (standard cleaning liquid 1 (SC1), hydrofluoric acid dilution solution (DHF), isopropyl alcohol (IPA), deionized water (DIW), etc.) L3 may be supplied from the outside. A cleaning liquid supply unit 700 may also be connected to the cleaning liquid inlet 122 through a connection unit 710. The cleaning liquid inlet 122 may be horizontally penetrated at the side of the second chamber 120 to connect the pressure chamber 101 with the outside.

[0067] The etching chamber 100 according to one embodiment of the present invention may include a pressurizing unit 800 for pressurizing the interior of the pressure chamber 101 and an exhaust unit 900 for exhausting the internal pressure of the pressure chamber 101 to the outside.

[0068] The pressurizing unit 800 can supply compressed gas (nitrogen (N2) or the like) to the pressure chamber 101 while the first chamber 110 and the second chamber 120 are sealed, so that the pressure chamber 101 is maintained at a set pressure. The pressurizing unit 800 can supply compressed gas to the interior of the pressure chamber 101, and a sensing unit (not shown in the figure) for measuring the internal pressure of the pressure chamber 101 can also be electrically connected to the pressurizing unit 800.

[0069] The exhaust unit 900 may exhaust the gas in the pressure chamber 101 to the outside to generate a pressure difference with the storage chamber of the etching liquid supply unit 600 , or maintain the pressure chamber 101 at an atmospheric pressure before opening the second chamber 120 .

[0070] The opening and closing unit 200 is used to open and close the etching chamber 100 . The opening and closing unit 200 may include a chamber opening and closing portion 210 for selectively opening the etching chamber 100 , and an opening and closing driving portion 220 for driving the chamber opening and closing portion 210 .

[0071] The chamber opening and closing part 210 is provided to be able to rise and fall, and the upper end of the chamber opening and closing part 210 is connected to the second chamber 120 . The opening and closing driving part 220 is connected to the chamber opening and closing part 210 and transmits the lifting driving force.

[0072] The chamber opening and closing part 210 may have a vertical length, an upper end of the chamber opening and closing part 210 may be connected to a side of the second chamber 120 , and the chamber opening and closing part 210 may be respectively disposed on both sides of the second chamber 120 .

[0073] The opening and closing driving unit 220 may use a pneumatic or hydraulic cylinder, etc. At this time, a connecting rod is provided at the lower portion of the opening and closing driving unit 220 so as to be retractable, and the lower end of the connecting rod of the opening and closing driving unit 220 is horizontally connected to the lower end of the chamber opening and closing unit 210 .

[0074] In addition, a first restraining portion 211 is formed concavely on the side of the chamber opening and closing portion 210 so that the second restraining portion 320 described later can be hooked or unhooked, and the first restraining portion 211 can be formed continuously along the periphery of the chamber opening and closing portion 210. The chamber opening and closing portion 210 is raised to an open position or lowered to a closed position together with the second chamber 120 by the driving force of the opening and closing driving portion 220.

[0075] In addition, the entrance portion of the first constraint portion 211 can be formed to be inclined in a manner such that the width in the up-down direction gradually increases toward the opening direction. Since the entrance portion of the first constraint portion 211 is formed widely, interference can be prevented when the front end of the second constraint portion 320 described later is inserted.

[0076] In addition, a first guide portion 230 for guiding the vertical movement may be further provided on one side of the chamber opening and closing portion 210. The first guide portion 230 may have a length in the vertical direction, and a first rail 231 may be formed in the vertical direction on one side of the first guide portion 230. That is, the chamber opening and closing portion 210 slides up and down in a state where it is coupled to the first guide portion 230, so that the chamber opening and closing portion 210 can be raised and lowered without play.

[0077] In addition, a connection portion may be provided on one side of the chamber opening and closing portion 210 so as to be able to slide along the first track 231 of the first guide portion 230 , and the connection portion of the chamber opening and closing portion 210 may be slidably coupled to the first track 231 in a convex-concave manner.

[0078] The locking unit 300 is used to selectively constrain the opening and closing unit 200 , and the locking unit 300 can move between a constraining position for constraining the movement of the opening and closing unit 200 and a releasing position for releasing the constraint.

[0079] The locking unit 300 is used to constrain the opening and closing unit 200 so that the etching chamber 100 with a pressurized atmosphere is closed. When the pressurized atmosphere is released and the constraint of the opening and closing unit 200 is released, the locking unit 300 can have a locking drive part 310 and a second constraint part 320 that cooperates with the first constraint part 211 to constrain the movement of the opening and closing unit 200.

[0080] The locking driving part 310 may use an air or hydraulic cylinder, etc. At this time, a connecting rod is installed on one side of the chamber opening and closing part 210 so as to be retractable, and the connecting rod of the locking driving part 310 may be connected to the second restraining part 320 at the front end.

[0081] like Figure 5 As shown, the chamber opening and closing part 210 can be lowered to the restraining position together with the second chamber 120, and the second restraining part 320 moves to one side by the driving force of the locking driving part 310 and is hooked to the first restraining part 211. At this time, the front end of the second restraining part 320 can be inserted into the first restraining part 211, and the first restraining part 211 can be hooked and configured in the up-down direction by the second restraining part 320.

[0082] A holding groove 321 may be formed concavely at the front end of the second binding portion 320 so as to surround the side surface of the first binding portion 211 when inserted into the first binding portion 211. The holding groove 321 may have a shape corresponding to that of the first binding portion 211.

[0083] In addition, a second guide portion 330 for guiding the movement of the second constraint portion 320 may be further provided on one side of the locking unit 300. The second guide portion 330 may have a length in both sides, and a second track 331 may be formed along both sides on one side of the second guide portion 330. That is, the second constraint portion 320 slides and moves in both sides in a state of being coupled with the second guide portion 330, so that the second constraint portion 320 can move without play.

[0084] In addition, a connection portion may be provided on one side of the second constraint portion 320 in a manner that allows sliding movement along the second track 331 of the second guide portion 330 , and the connection portion of the second constraint portion 320 may be slidably coupled to the second track 331 in a convex-concave manner.

[0085] In addition, the first chamber 110, the opening and closing unit 200, and the locking unit 300 can be installed on the base part 10. The first chamber 110 can be fixed to the base part 10 horizontally, the chamber opening and closing part 210 can be vertically connected through the base part 10, and the first constraint part 211 can be raised and lowered at the lower part of the base part 10 to a constraint position and a release position for releasing the constraint.

[0086] In addition, the opening and closing driving part 220 can be vertically combined with the lower part of the base part 10, the connecting rod of the opening and closing driving part 220 can be retracted toward the lower part, and the connecting rod of the opening and closing driving part 220 and the lower end of the chamber opening and closing part 210 can be connected laterally.

[0087] In addition, the locking drive part 310 can be horizontally combined with the lower part of the base part 10, the second constraint part 320 can be hooked or unhooked with the first constraint part 211 at the lower part of the base part 10, and the second guide part 330 can guide the second constraint part 320 in a state of being horizontally combined with the lower part of the base part 10.

[0088] On the other hand, an etching device according to an embodiment of the present invention is Fig.10 and 11 As shown, the etching chamber 100 , an etching liquid supply part 600 , a rinse liquid supply part 650 , a cleaning liquid supply part 700 and a first pressurization maintaining part 810 may be included.

[0089] The etching liquid supply unit 600 can supply the etching liquid L1 to the etching chamber 100 at a high temperature. When the temperature of the etching liquid L1 is below a set temperature, the etching liquid supply unit 600 stops supplying the etching liquid L1 to the etching chamber 100 and heats the etching liquid L1 to the set temperature.

[0090] The etching liquid supply unit 600 may include a storage chamber 620, a suction unit 630, and a temperature maintenance unit 640. The storage chamber 620 stores the etching liquid L1, the suction unit 630 is provided in the supply pipeline unit 21 described later, and moves the etching liquid L1, and the temperature maintenance unit 640 maintains the etching liquid L1 stored in the storage chamber 620 at a set temperature.

[0091] The temperature maintaining unit 640 may include: a heater 641, which is provided in the storage chamber 620; and a temperature control unit 642, which senses the temperature of the etching liquid L1 and controls the driving of the heater 641 so that the etching liquid L1 is maintained at a set temperature. The heater 641 heats the etching liquid L1 contained in the storage chamber 620 to the set temperature, and the suction unit 630 may transmit the suction pressure in a state connected to the supply line unit 21.

[0092] Furthermore, it may include: a supply pipeline section 21, which connects the etching liquid supply section 600 and the etching chamber 100; a circulation pipeline section 30, which connects the supply pipeline section 21 and the etching liquid supply section 600; and a recovery pipeline section 40, which supplies the etching liquid L1 discharged from the etching chamber 100 to the etching liquid supply section 600.

[0093] In addition, the system may include a supply opening and closing unit 22 for selectively opening and closing the supply line unit 21 , a circulation opening and closing unit 31 for selectively opening and closing the circulation line unit 30 , and a recovery opening and closing unit 41 for selectively opening and closing the recovery line unit 40 .

[0094] The rinse liquid supply unit 650 supplies the rinse liquid L2 to the etching chamber 100 , and may include a rinse liquid pipeline unit 70 connecting the rinse liquid supply unit 650 and the etching chamber 100 , and a rinse opening and closing unit 71 for selectively opening and closing the rinse liquid pipeline unit 70 .

[0095] The cleaning liquid supply unit 700 supplies the cleaning liquid L3 to the etching chamber 100 , and may further include a cleaning liquid pipeline unit 80 connecting the cleaning liquid supply unit 700 and the etching chamber 100 , and a cleaning opening and closing unit 81 for selectively opening and closing the cleaning liquid pipeline unit 80 .

[0096] The first pressurizing maintaining unit 810 maintains at least one of the etching chamber 100 and the etching liquid supply unit 600 in a pressurized atmosphere. At this time, one first pressurizing maintaining unit 810 can control the etching chamber 100 and the etching liquid supply unit 600 in an integrated manner, or the first pressurizing maintaining unit 810 is connected to the etching chamber 100 and the etching liquid supply unit 600 respectively and controls them independently.

[0097] In addition, it may also include: a pressurized storage unit 126, which contains at least one of the rinse liquid L2 and the cleaning liquid L3 discharged from the etching chamber 100; and a second pressurized maintaining unit 820, which maintains the pressurized storage unit 126 in a pressurized atmosphere.

[0098] On the other hand, an etching device according to an embodiment of the present invention is Fig.10 As shown, it may further include: a discharge pipeline portion 60 that discharges any one of the rinse liquid L2 and the cleaning liquid L3 discharged from the etching chamber 100 to the outside; and a discharge opening and closing portion 61 that selectively opens and closes the discharge pipeline portion 60.

[0099] That is, any one of the rinse liquid L2 and the cleaning liquid L3 discharged to the outside through the discharge port of the etching chamber 100 can be discharged to the outside through the discharge line part 60 after the discharge opening and closing part 61 is opened.

[0100] On the other hand, an etching device according to another embodiment of the present invention is Fig.11 As shown, a pressurized exhaust line portion 50 connecting the etching chamber 100 and the pressurized storage portion 126 and a pressurized opening and closing portion 51 for selectively opening and closing the pressurized exhaust line portion 50 may be further provided.

[0101] That is, any one of the rinsing liquid L2 and the cleaning liquid L3 discharged to the outside through the discharge port of the etching chamber 100 can be stored in the pressurized storage part 126 through the pressurized discharge pipeline part 50 after the pressurized opening and closing part 51 is opened. When the pressure of the pressurized storage part 126 is discharged to the outside, any one of the rinsing liquid L2 and the cleaning liquid L3 stored in the pressurized storage part 126 can be discharged to the outside.

[0102] To explain the etching liquid L1 supply process of the etching liquid supply part 600, the supply opening and closing part 22 and the recovery opening and closing part 41 are opened, and the high-temperature etching liquid L1 is supplied to the inlet of the etching chamber 100 through the supply pipeline part 21, so that the etching liquid L1 discharged from the outlet of the etching chamber 100 is moved to the storage chamber 620 of the etching liquid supply part 600 through the recovery pipeline part 40.

[0103] At the same time, the loop opening and closing part 31, the flushing opening and closing part 71 and the cleaning opening and closing part 81 are closed, and the discharge opening and closing part 61 or the pressurizing opening and closing part 51 is closed. At this time, the loop pipeline part 30, the flushing liquid pipeline part 70 and the cleaning liquid pipeline part 80 are closed, and the discharge pipeline part 60 or the pressurizing discharge pipeline part 50 is closed.

[0104] In this process, when the temperature of the etching liquid L1 is lower than the set temperature, the etching liquid supply unit 600 stops supplying the etching liquid L1 to the etching chamber 100 and heats the etching liquid L1 to the set temperature.

[0105] When the temperature of the etching liquid L1 is lower than the set temperature, the circulation opening and closing part 31 is opened to circulate the etching liquid L1 along the circulation line part 30 , and the supply opening and closing part 22 and the recovery opening and closing part 41 are closed.

[0106] In this state, the etching liquid L1 continuously circulates only through a portion of the supply line 21 connecting the supply opening and closing section 22 and the storage chamber 620 and the circulation line 30 , and the etching liquid L1 is heated by the heater 641 until it reaches the set temperature.

[0107] Then, when the temperature of the etching liquid L1 reaches the set temperature, the supply opening and closing part 22 and the recovery opening and closing part 41 are opened, and the high-temperature etching liquid L1 is supplied to the inlet of the etching chamber 100 through the supply pipeline part 21, so that the etching liquid L1 discharged through the outlet of the etching chamber 100 is moved to the storage chamber 620 of the etching liquid supply part 600 through the recovery pipeline part 40.

[0108] That is, during the supply process of the etching liquid L1 by the etching liquid supply part 600, when the temperature of the etching liquid L1 drops below the set temperature, the etching process is terminated, and the etching liquid L1 is circulated and heated to the set temperature, thereby maintaining the etching liquid L1 at a temperature suitable for the process.

[0109] To explain the process of supplying the rinsing liquid L2 by the rinsing liquid supply unit 650 , the rinsing opening and closing unit 71 is opened, and the rinsing liquid L2 at room temperature is supplied to the inlet of the etching chamber 100 through the rinsing liquid pipeline unit 70 , and the discharge opening and closing unit 61 or the pressurizing opening and closing unit 51 is opened.

[0110] At the same time, the supply opening and closing part 22, the recovery opening and closing part 41, the circulation opening and closing part 31 and the cleaning opening and closing part 81 are closed. At this time, the supply pipeline part 21, the recovery pipeline part 40, the circulation pipeline part 30 and the cleaning liquid pipeline part 80 are closed.

[0111] In this process, the rinse liquid L2 discharged to the outside through the discharge port of the etching chamber 100 may be discharged to the outside through the discharge line portion 60 , or stored in the pressurized storage portion 126 through the pressurized discharge line portion 50 .

[0112] To explain the supply process of the cleaning liquid L3 of the cleaning liquid supply unit 700 , the cleaning opening and closing unit 81 is opened, the cleaning liquid L3 is supplied to the inlet of the etching chamber 100 through the cleaning liquid pipeline unit 80 , and the discharge opening and closing unit 61 or the pressurizing opening and closing unit 51 is opened.

[0113] At the same time, the supply opening and closing part 22, the recovery opening and closing part 41, the circulation opening and closing part 31 and the cleaning opening and closing part 81 are closed. At this time, the supply pipeline part 21, the recovery pipeline part 40, the circulation pipeline part 30 and the cleaning liquid pipeline part 80 are closed.

[0114] In this process, the cleaning liquid L3 discharged to the outside through the discharge port of the etching chamber 100 may be discharged to the outside through the discharge pipeline portion 60 , or may be stored in the pressurized storage portion 126 through the pressurized discharge pipeline portion 50 .

[0115] On the other hand, the etching device of another embodiment of the present invention may include a first nozzle 130 and a second nozzle 140. The first nozzle 130 is used to spray a high-temperature etching liquid L1 or a normal-temperature rinsing liquid L2 downwardly toward the upper part of the object W placed in the pressure chamber 101, and one end of the first nozzle 130 passes through the side of the etching chamber 100 and is inserted into the pressure chamber 101 at a first angle.

[0116] Among them, the first nozzle 130 can have a predetermined length in the insertion direction, one end of the first nozzle 130 on the length direction side can be inserted through the etching liquid inlet 121 of the second chamber 120 and located inside the pressure chamber 101, and the opposite end can be exposed outside the second chamber 120.

[0117] When etching or rinsing the object W, the first nozzle 130 is supplied with etching liquid L1 or rinsing liquid L2 from the etching liquid supply unit 600. Inside the first nozzle 130, a flow path for moving the etching liquid L1 or rinsing liquid L2 is formed along the length direction, and a first discharge port 131 is formed at the lower part of the first nozzle 130 so that the etching liquid L1 or the rinsing liquid L2 can be sprayed downward.

[0118] At this time, one end of the first nozzle 130 in the longitudinal direction is located at the center W1 of the object W placed on the brackets 401 and 402 described later, and the first ejection port 131 can be arranged at the lower part of the first nozzle 130, or a plurality of first ejection ports 131 can be arranged in a spaced state along the longitudinal direction. One end of the first nozzle 130 in the longitudinal direction can be horizontally located inside the pressure chamber 101 and spaced at the upper part of the brackets 401 and 402 described later, but the installation angle of the first nozzle 130 can be variously set as needed.

[0119] The second nozzle 140 is used to spray the cleaning liquid L3 downward toward the upper part of the object W placed in the pressure chamber 101 when cleaning the object W. One end of the second nozzle 140 passes through the side of the etching chamber 100 and is inserted into the pressure chamber 101 at a second angle. The second nozzle 140 may have a predetermined length along the insertion direction. One end of the second nozzle 140 on the length direction side may be inserted through the cleaning liquid inlet 122 of the second chamber 120 and located inside the pressure chamber 101, and the opposite end may be exposed outside the second chamber 120.

[0120] In addition, when the second nozzle 140 is cleaning the object W, it is supplied with cleaning liquid L3 from the cleaning liquid supply part 700. Inside the second nozzle 140, a flow path for moving the cleaning liquid L3 is formed along the length direction, and a second discharge port 141 is formed at the lower part of the second nozzle 140 so that the cleaning liquid L3 can be sprayed downward.

[0121] One end of the second nozzle 140 in the longitudinal direction is located at the center W1 of the object W placed on the brackets 401 and 402 described later. The second nozzle 141 can be arranged at the lower part of the second nozzle 140, or a plurality of second nozzles 141 can be arranged in a spaced state along the longitudinal direction. One end of the second nozzle 140 in the longitudinal direction can be horizontally located inside the pressure chamber 101 and spaced at the upper part of the brackets 401 and 402 described later, but the installation angle of the second nozzle 140 can be variously set as needed.

[0122] When etching the object W, the first nozzle 130 can spray the etching liquid L1 to the center and edge of the object W. When rinsing the object W, the rinsing liquid L2 can be sprayed to the center and edge of the object W. When cleaning the object W, the second nozzle 140 can spray the cleaning liquid L3 to the center W1 and edge of the object W.

[0123] The first nozzle 130 and the second nozzle 140 are extended in the longitudinal direction toward the center W1 of the object W, and the distance between the first nozzle 130 and the second nozzle 140 is closer as they are extended toward the center W1 of the object W. At this time, the supply direction side end of the first nozzle 130 inserted into the etching liquid inlet 121 and the supply direction side end of the second nozzle 140 inserted into the cleaning liquid inlet 122 are arranged to be separated by a wide interval, and the ejection direction side end of the first nozzle 130 located at the center W1 of the object W and the ejection direction side end of the second nozzle 140 located at the center W1 of the object W are arranged to be separated by a relatively narrow interval.

[0124] An etching device according to an embodiment of the present invention is as follows Figure 4 and 6 As shown, a bracket 401 may be provided in the receiving portion 123 of the first chamber 110. The bracket 401 may be rotatably arranged inside the receiving portion 123 with the vertical rotation center as a reference, and a support pin 411 for supporting the object W may be installed on the upper portion of the bracket 401.

[0125] In addition, the bracket 401 may have a disc shape, and a rotation shaft 420 forming a vertical rotation center may protrude vertically from a lower portion of the bracket 401 , and the rotation shaft 420 may vertically penetrate and connect with the first connecting portion 111 of the first chamber 110 .

[0126] In addition, the rotation driving part 440 may be mechanically connected to the rotation shaft 420 , and the bracket 401 may be rotated by the rotation force transmitted from the rotation driving part 440 to the rotation shaft 420 .

[0127] As for the bracket 401 of one embodiment of the present invention, a structure (not shown in the figure) can be used in which after the object W is placed on the support pin 411, a chuck (not shown in the figure) is used to fix (clamp) the object W.

[0128] On the other hand, the first connection portion 111 may be further provided with an annular first sealing member (not shown) that surrounds the rotating shaft 420 in a tightly contacted state in the rotation direction. The first sealing member may be made of a material such as polytetrafluoroethylene (PTFE).

[0129] A first rib (not shown) may protrude from the inner circumference of the first sealing member, and the first rib may be continuously formed along the inner circumference of the first sealing member. The first rib protrudes obliquely upward or downward, and may be obliquely close to the radial direction (rotation direction) of the rotating shaft 420, and more than one first rib may be arranged along the up-down direction of the first sealing member.

[0130] Since the first rib of the first sealing member is in close contact with the outer surface of the rotating shaft 420 , airtightness between the first connecting portion 111 and the rotating shaft 420 can be ensured.

[0131] In addition, a bearing (not shown in the figure) that can rotatably support the rotating shaft 420 in the radial direction can be combined in the first connecting portion 111, the bearing can be located at the upper and lower parts of the first sealing component, and a gasket component (not shown in the figure) that surrounds the rotating shaft 420 in the radial direction can be combined between the bearing and the first sealing component.

[0132] An etching device according to an embodiment of the present invention is as follows Figures 12 to 15 As shown, a bracket 402 may be provided in the receiving portion 123 of the first chamber 110. The bracket 402 may have a disc shape, and a rotation shaft 420 forming a vertical rotation center may protrude vertically from the lower portion of the bracket 402, and the rotation shaft 420 may be vertically connected through the first connecting portion 111 of the first chamber 110. The rotation driving portion 440 may be mechanically connected to the rotation shaft 420, and the bracket 402 may be rotated by the rotation force transmitted from the rotation driving portion 440 to the rotation shaft 420.

[0133] On the other hand, the first connection portion 111 may be further provided with an annular first sealing member (not shown in the figure) that tightly surrounds the rotation direction of the rotating shaft 420, and the first sealing member may be made of materials such as polytetrafluoroethylene (PTFE). A first rib (not shown in the figure) may protrude from the inner circumference of the first sealing member, and the first rib may be continuously formed along the inner circumference of the first sealing member.

[0134] The first rib protrudes obliquely upward or downward, and can be obliquely close to the radial direction (rotation direction) of the rotating shaft 420. More than one first rib can be arranged along the vertical direction of the first sealing member. Since the first rib of the first sealing member is closely close to the outer surface of the rotating shaft 420, the airtightness between the first connecting part 111 and the rotating shaft 420 can be ensured.

[0135] In addition, a bearing (not shown in the figure) that can rotatably support the rotating shaft 420 in the radial direction can be combined in the first connecting portion 111, the bearing can be located at the upper and lower parts of the first sealing component, and a gasket component (not shown in the figure) that surrounds the rotating shaft 420 in the radial direction can be combined between the bearing and the first sealing component.

[0136] On the other hand, the bracket 402 of another embodiment of the present invention can be placed in a manner different from the placement manner (clamping) of the aforementioned bracket 401. Figures 12 to 14 As shown, an etching performance enhancing portion 412 on which an etching object W is placed may be used.

[0137] The etching performance improvement portion 412 is formed concavely so that the object W is placed in an inserted state and immersed in the etching liquid L1. The etching performance improvement portion 412 may include: a placement surface 412a formed along the edge so that the object W is placed; and a protrusion 412b formed along the edge of the placement surface 412a to contain the etching liquid L1 on the upper part of the object W.

[0138] The placement surface 412a may be continuously formed along the inner circumference of the bracket 402, the upper end of the protrusion 412b is higher than the placement surface 412a, and the protrusion 412b may be continuously formed along the edge of the placement surface 412a.

[0139] In addition, on the bracket 402, the channel 430 can penetrate up and down to allow air to pass through. The channel 430 allows air to pass through up and down, so when the edge of the object W is placed on the placement surface 412a, the object W can be prevented from rising due to buoyancy.

[0140] In addition, the pressure chamber 101 may further include a lifting unit 500 for lifting the object W in the pressure chamber 101. The lifting unit 500 positions the object W on the upper portion of the bracket 402 when ascending, and places the object W on the etching performance improving unit 412 when descending.

[0141] The lifting unit 500 may include a main body 510 that can be lifted and lowered at the bottom of the bracket 402 ; and a support pin 520 that protrudes upward from the main body 510 and can be lifted and lowered through the channel 430 to support the bottom of the object W.

[0142] A lifting pin 530 may be vertically protruded from the lower portion of the main body 510 . The lifting pin 530 may be vertically connected through the second connecting portion 112 of the first chamber 110 . The lifting driving portion 540 may be mechanically connected to the lifting pin 530 .

[0143] The second connection portion 112 may further include an annular second sealing member (not shown) that surrounds the lift pin 530 in a close contact state in the width direction. The second sealing member may be made of a material such as polytetrafluoroethylene (PTFE).

[0144] A second rib (not shown in the figure) may protrude from the inner circumference of the second sealing member, and the second rib may be continuously formed along the inner circumference of the second sealing member. The second rib may protrude obliquely upward or downward, and obliquely adhere to the width direction of the lifting pin 530, and more than one second rib may be arranged along the vertical direction of the second sealing member. Since the second rib of the second sealing member is closely attached to the outer surface of the lifting pin 530, the airtightness between the second connecting portion 112 and the lifting pin 530 can be ensured.

[0145] On the other hand, a bearing (not shown in the figure) that can rotatably support the lifting pin 530 in the width direction can be combined in the second connecting portion 112, the bearing can be located at the upper and lower parts of the second sealing component, and a gasket component (not shown in the figure) that surrounds the lifting pin 530 in the width direction can be combined between the bearing and the second sealing component.

[0146] On the other hand, the aforementioned lifting drive unit 540 and the rotating drive unit 440 can be driven and controlled by a control unit (not shown in the figure), and the rotation speed of the rotating drive unit 440 and the lifting timing and speed of the lifting drive unit 540 can be controlled according to the drive control of the control unit.

[0147] Refer to the following Fig.16 and 17 , describing the operation of an etching device according to an embodiment of the present invention, and the same structure as the aforementioned structure will not be described repeatedly.

[0148] An etching device according to an embodiment of the present invention is as follows Fig.16 As shown, it may include a loading step S100, a pressurizing step S200, an etching step S300, a rinsing step S400, a cleaning step S500, a drying step S600, a decompressing step S700 and an unloading step S800.

[0149] The loading step S100 is a process of placing the object W on the upper part of the brackets 401 and 402. In the loading step S100, the object W is placed on the upper part of the brackets 401 and 402 after the second chamber 120 is opened.

[0150] In one embodiment of the present invention, the loading step S100 may open the second chamber 120 and place the object W on the support pins 411 of the bracket 401 .

[0151] On the other hand, the loading step S100 according to another embodiment of the present invention may include a rising step S110 , a supplying step S120 , and a descending step S130 .

[0152] The ascending step S110 is a process of driving the elevating driving unit 540 to elevate the elevating unit 500 to the supporting position of the object W. In the ascending step S110 , the elevating pins 530 are ascended inside the second connecting part 112 by the elevating driving force of the elevating driving unit 540 , and the upper ends of the supporting pins 520 are located on the upper part of the bracket 402 through the passage 430 .

[0153] The object supplying step S120 is a process of inserting the object W through the opened pressure chamber 101 and placing the object W on the upper end of the support pin 520 . The object W placed on the upper end of the support pin 520 is separated and located on the upper part of the bracket 402 .

[0154] The descending step S130 is a process of descending the lifting unit 500 to place the object W on the bracket 402. In the descending step S130, the object W is horizontally placed on the etching performance improvement portion 412 of the bracket 402.

[0155] At this time, the upper end of the support pin 520 is located at the lower part of the placement surface 412a through the channel 430, the edge of the object W is placed on the placement surface 412a, and the upper surface of the object W placed on the placement surface 412a is located below the upper end of the protrusion 412b.

[0156] In the pressurizing step S200 , the second chamber 120 is combined with the first chamber 110 to seal the pressure chamber 101 , and then the pressurizing unit 800 is driven to supply gas (N 2 or the like) to the pressure chamber 101 to pressurize the pressure chamber 101 to a set pressure.

[0157] In the etching step S300 , the etching liquid supply unit 600 is driven to eject the high-temperature etching liquid L1 through the first discharge port 131 of the first nozzle 130 , and the rotation drive unit 440 is driven to rotate the carriers 401 and 402 (eg, 10 to 500 rpm).

[0158] In an etching step S300 of an embodiment of the present invention, etching liquid L1 can be sprayed onto the object W placed on the support pin 411 of the bracket 401. When the etching liquid L1 is sprayed onto the object W rotating together with the bracket 401, the etching liquid L1 can pass through the edge of the object W due to centrifugal force and fall to the outside and be contained in the containing portion 123.

[0159] On the other hand, in the etching step S300 of another embodiment of the present invention, the etching liquid L1 may be sprayed onto the object W placed on the etching performance enhancement portion 412 of the bracket 402, and the object W may be etched while being immersed in the etching liquid L1 contained in the protrusion 412b.

[0160] When the etching liquid L1 is sprayed onto the object W rotating together with the bracket 402 , the etching liquid L1 may penetrate the edge of the object W due to centrifugal force, fall out to the outside, and be accommodated in the accommodation portion 123 .

[0161] The high-temperature etching liquid L1 easily loses its temperature due to the atmosphere. When the etching liquid L1 sprayed onto the upper part of the object W expands toward the edge due to centrifugal force, the temperature difference between the etching liquid L1 on the center side and the edge side of the object W increases due to heat loss, and the edge side of the object W is relatively more difficult to etch than the center side.

[0162] That is, the object W is etched while being immersed in the etching liquid L1 contained in the protruding portion 412 b , so that the temperature deviation of the etching liquid L1 can be reduced, thereby making it possible to uniformly etch the surface of the object W.

[0163] In addition, in the etching step S300, the etching liquid L1 contained in the containing part 123 can be moved to the external etching liquid supply part 600 through the discharge part 125, or can be moved to another storage part (not shown in the figure). The etching liquid supply part 600 can supply the etching liquid L1 through the etching liquid inlet 121 in a high temperature (175°C, etc.) state, and can circulate the etching liquid L1 supplied to the inside of the pressure chamber 101 and re-supply it through the etching liquid inlet 121.

[0164] At this time, the etching liquid L1 supplied to the pressure chamber 101 through the etching liquid inlet 121 can be maintained at a set temperature by the etching liquid supply unit 600, and the etching liquid supply unit 600 can adjust the temperature of the etching liquid L1 to obtain a desired etching rate and selectivity.

[0165] The rinsing step S400 is a process for supplying a rinsing liquid L2 into the etching chamber 100 to wash the object W. In the rinsing step S400, the etching liquid supply unit 600 is driven to spray a rinsing liquid (phosphoric acid: H3PO4, etc.) L2 at room temperature through the second outlet 141 of the second nozzle 140, and the object W is cooled for a predetermined time to remove the byproducts and etching liquid L1 remaining on the object W.

[0166] In addition, the rinsing step S400 can supply the rinsing liquid L2 through the etching liquid inlet 121 or another inlet (not shown in the figure). In the rinsing step S400, the pressure chamber 101 can be maintained in a pressurized atmosphere, or the internal pressure of the pressure chamber 101 can be discharged to the outside to maintain the pressure chamber 101 at atmospheric pressure. In the rinsing step S400, the rinsing liquid L2 contained in the containing part 123 can be discharged to an external storage part (pressurized tank, discharge tank, etc., not shown in the figure) through the discharge part 125.

[0167] In the etching step S300 and the rinsing step S400 , the etching liquid L1 and the rinsing liquid L2 are supplied in different directions. The closer to the center W1 of the object W, the closer the spraying positions of the etching liquid L1 and the rinsing liquid L2 are.

[0168] In the cleaning step S500, while the cleaning liquid (water, etc.) L3 is supplied through the cleaning liquid inlet 122 of the second chamber 120, the brackets 401 and 402 can be rotated by the transmission of the rotational force of the rotation drive unit 440. In the cleaning step S500, the cleaning liquid L3 contained in the containing unit 123 can be discharged to the storage unit (pressurizing tank, discharge tank, etc., not shown in the figure) through the discharge unit 125.

[0169] The drying step S600 is a process of drying the object W. The drying method of the drying step S600 can be variously applied according to needs. In the drying step S600 , the brackets 401 and 402 can be rotated by the transmission of the rotation force of the rotation driving unit 440 .

[0170] In the drying step S600 and the cleaning step S500, the pressure chamber 101 may be maintained in a pressurized atmosphere, or the internal pressure of the pressure chamber 101 may be exhausted to the outside, and the cleaning and drying may be performed under atmospheric pressure. For example, the internal pressure of the pressure chamber 101 may be exhausted by driving the exhaust unit 900 or opening the second chamber 120.

[0171] The decompression step S700 is a process of discharging the internal pressure of the pressure chamber 101 to the outside. The decompression step 700 drives the exhaust unit 900 to discharge the pressure of the pressure chamber 101 to the outside. By discharging the pressure of the exhaust unit 900, the pressure chamber 101 is converted to the atmospheric pressure state.

[0172] The unloading step S800 is a process of discharging the object W to the outside. The unloading step S800 of one embodiment of the present invention can discharge the object W placed on the support pin 411 of the bracket 401 to the outside after opening the second chamber 120 .

[0173] On the other hand, in another embodiment of the present invention, in the unloading step S800 , after the second chamber 120 is opened, the lifting unit 500 is raised to discharge the object W to the outside of the pressure chamber 101 .

[0174] The etching apparatus according to one embodiment of the present invention is constrained in a position where the etching chamber 100 is closed, so that when the pressure chamber 101 of the etching chamber 100 is maintained in a pressurized atmosphere, the etching chamber 100 can be prevented from opening due to high pressure.

[0175] Furthermore, during etching, the interior of the etching chamber 100 is maintained in a pressurized atmosphere, thereby preventing vaporization, maintaining the concentration of the etching solution L1 at a predetermined level, and improving the etching selectivity.

[0176] In addition, the concentration of the etching liquid L1 is maintained at a predetermined value, and thus, there is no need to add additional deionized water and etching liquid for maintaining the concentration of the etching liquid L1. This can improve the product recovery rate, reduce the consumption of the etching liquid L1, and greatly save costs economically. The object W is etched while being immersed in the etching liquid L1, so that a thicker liquid film of the etching liquid L1 can be formed, which can improve the etching performance.

[0177] The above is a description of a specific embodiment of the etching device of the present invention. It goes without saying that various modifications can be made without departing from the scope of the present invention.

[0178] Therefore, the scope of the present invention should not be determined by being limited to the described embodiments, but should be determined based on the following claims and the scope of equivalents to the claims.

[0179] That is, the aforementioned embodiments should be understood in all aspects as being merely illustrative and not restrictive. Compared with the detailed description, the scope of the present invention is represented by the claims described below, and all changes or deformations derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.

Claims

1. An etching device, comprising: An etching chamber, comprising a first chamber and a second chamber disposed on the upper portion of the first chamber so as to be openable and closable; an opening and closing unit, the opening and closing unit opens and closes the etching chamber and has a first constraining portion; and a locking unit, which selectively constrains the opening and closing unit and comprises a locking driving part and a second constraining part, wherein the second constraining part is connected to the locking driving part, and when the first constraining part moves, the second constraining part and the first constraining part work together to constrain the movement of the opening and closing unit, The first constraint portion and the second constraint portion are located below the second chamber. 2 . The etching device according to claim 1 , wherein the locking unit moves between a restraining position for restraining the movement of the opening and closing unit and a releasing position for releasing the restraint.

3. The etching device according to claim 1, wherein the opening and closing unit comprises: a chamber opening and closing portion, the chamber opening and closing portion selectively opening the etching chamber; and An opening and closing driving unit drives the chamber opening and closing unit.

4. The etching apparatus according to claim 3, further comprising: A first guide portion guides the movement of the chamber opening and closing portion.

5. The etching apparatus according to claim 1, further comprising: The etching chamber is maintained in a pressure maintaining portion with a pressurized atmosphere.

6. The etching device according to claim 5, wherein the pressure maintaining part comprises: a pressurizing unit, which maintains the etching chamber at a set pressure; and An exhaust portion is provided to exhaust the gas in the etching chamber to the outside. 7 . The etching device according to claim 1 , wherein the locking unit constrains the opening and closing unit so that the etching chamber of the pressurized atmosphere is closed, and when the pressurized atmosphere is released, the constraint of the opening and closing unit is released.

8. The etching apparatus according to claim 1, further comprising: A second guide portion guides the movement of the second constraint portion. 9 . The etching apparatus according to claim 5 , wherein the pressurization maintaining unit maintains the pressure in the etching chamber at 0.1 bar to 10 bar.

10. The etching apparatus according to claim 5, further comprising: An etching liquid supplying portion supplies etching liquid to the etching chamber.

11. The etching device according to claim 10, wherein the etching solution selectively uses at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4 or a mixture of more than one thereof.

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