Laser alignment fixture for reactor systems

Abstract

A laser alignment fixture for a reactor system can be used to align components of the reactor system to allow for uniform deposition of thin films onto substrates. The laser alignment fixture can include a lid assembly and a plurality of laser and sensor assemblies. The laser alignment fixture can align at least a flow control ring, a base, and a sidewall of the reactor system.

Description

Technical Field

[0001] The present disclosure generally relates to a laser alignment fixture for positioning components within a reactor system. A related fixture is disclosed in U.S. patent application Ser. No. 62 / 985,184, entitled “Alignment Fixture for a Reactor System,” filed on March 4, 2020, the contents of which are incorporated herein by reference in their entirety to the extent not inconsistent with the present disclosure. Background Art

[0002] The reaction chamber can be used to deposit various layers of materials onto a semiconductor substrate. The semiconductor can be placed on a susceptor within the reaction chamber. Both the substrate and the susceptor can be heated to a desired substrate temperature set point. In an exemplary substrate processing process, one or more reactant gases can be passed over the heated substrate, resulting in thin films of material being deposited on the substrate surface. Throughout subsequent deposition, doping, photolithography, etching, and other processes, these layers can be used to form an integrated circuit.

[0003] In order to achieve the desired result on the substrate (e.g., uniform or robust deposition of the film on the substrate), the pedestal and / or substrate can be arranged at a certain position in the reaction chamber. For example, the pedestal can be arranged so that there is a desired space between the pedestal and the sidewall of the reaction chamber (e.g., a uniform space resulting from centering the pedestal in the reaction chamber). Such positioning can prevent uneven processing of the substrate in the reaction chamber and can facilitate achieving the desired result. However, achieving the desired position of the pedestal or other components in the reaction chamber may be difficult, and errors in such positioning may lead to undesirable processing results.

[0004] The environment can make it difficult to achieve the desired position. Many substrate processing processes can occur at high temperatures and low pressures. Therefore, a system that allows for precise component alignment and leveling within a reaction chamber under specific environmental conditions is desired. Summary of the Invention

[0005] This summary is provided to introduce some concepts in a simplified form. These concepts are described in more detail in the detailed description of the exemplary embodiments below. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0006] According to at least one embodiment of the present invention, a laser alignment fixture for a reactor system is disclosed. The reactor system is used to deposit a thin film on a substrate. The laser alignment fixture includes: a cover assembly configured to be placed on the reactor system, the cover assembly including an observation window; a plurality of laser and sensor assemblies disposed on the cover assembly; wherein the reactor system includes: a susceptor, wherein the susceptor is configured to receive a substrate thereon; a susceptor positioning system configured to move the susceptor along an xy plane; a flow control ring disposed on an outer edge of the susceptor; and a spacer plate contacting the flow control ring and disposed on an outer edge of the flow control ring; wherein the plurality of laser and sensor assemblies illuminate and sense light for determining alignment of the susceptor, the flow control ring, and the spacer plate; wherein the light is used to adjust the position of the susceptor by using the susceptor positioning system.

[0007] All of these embodiments are intended to be within the scope of the present disclosure.These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, the present disclosure not being limited to any particular embodiment(s) discussed. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The subject matter of the present disclosure is particularly pointed out and distinctly claimed in the concluding portion of the specification. However, a more complete understanding of the disclosure can be best obtained by referring to the detailed description and claims taken in conjunction with the accompanying drawings, wherein like reference numerals refer to like elements.

[0009] Figure 1 Illustrated are simplified schematic diagrams of reactor systems according to various embodiments.

[0010] Figure 2 Illustrated is a perspective view of a lower portion of a reactor system according to various embodiments.

[0011] Figure 3 Illustrated is a perspective view of an alignment fixture of a reaction chamber according to various embodiments.

[0012] Figure 4 Illustrated is a side view of an alignment fixture disposed on a reactor system according to various embodiments.

[0013] Figure 5 Illustrated is a side view of an alignment fixture disposed on a reactor system according to various embodiments.

[0014] Figure 6 Illustrated are schematic diagrams of an alignment fixture according to various embodiments.

[0015] It should be understood that the elements in the figures are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the figures may be exaggerated relative to other elements to help improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0016] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the present disclosure extends beyond the specifically disclosed embodiments and / or uses of the present disclosure and obvious modifications and equivalents thereof. Therefore, the scope of the present disclosure is not intended to be limited by the specific embodiments described herein.

[0017] The illustrations presented herein are not intended to be actual views of any particular material, apparatus, structure, or device, but are merely representations that are used to describe embodiments of the present disclosure.

[0018] As used herein, the term "substrate" may refer to any underlying material or materials that may be used or upon which a device, circuit, or film may be formed.

[0019] As used herein, the term "atomic layer deposition" (ALD) may refer to a vapor deposition process in which deposition cycles, preferably multiple, sequential deposition cycles, are performed in a process chamber. During each cycle, a precursor may be chemisorbed onto a deposition surface (e.g., a substrate surface or a previously deposited underlying surface, such as material from a previous ALD cycle), forming a monolayer or sub-monolayer that is not readily reactive with additional precursors (i.e., a self-limiting reaction). Thereafter, if desired, a reactant (e.g., another precursor or a reactive gas) may be subsequently introduced into the process chamber for converting the chemisorbed precursor into the desired material on the deposition surface. The reactant may be capable of further reacting with the precursor. Additionally, a purge step may be employed during each cycle to remove excess precursor from the process chamber and / or to remove excess reactant and / or reaction byproducts from the process chamber following conversion of the chemisorbed precursor. In addition, as used herein, the term "atomic layer deposition" also includes processes referred to by related terms, such as chemical vapor atomic layer deposition, atomic layer epitaxy (ALE), molecular beam epitaxy (MBE), gas source MBE, or organometallic MBE and chemical beam epitaxy when performed with alternating pulses of (multiple) precursor components, reactive gases and purge (e.g., inert carrier) gases.

[0020] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors, which react and / or decompose on the substrate surface to produce the desired deposit.

[0021] As used herein, the terms "film" and "thin film" may refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, "film" and "thin film" may include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or clusters of atoms and / or molecules. "Film" and "thin film" may include materials or layers that have pinholes but are still at least partially continuous.

[0022] As used herein, the term "gas" may include vaporized solids and / or liquids, and may consist of a single gas or a mixture of gases.

[0023] Reactor systems for ALD, CVD, etc. can be used in a variety of applications, including depositing and etching materials on substrate surfaces. Figure 1 A reaction system 100 according to at least one embodiment of the present invention is illustrated. The reaction system includes an upper reaction chamber assembly 110A; a lower reaction chamber assembly 110B; a susceptor 120 configured to hold a substrate 140; a susceptor positioning system 130 configured to move the susceptor 120 along an xy plane; a gas distribution apparatus 150 configured to uniformly disperse a gas over the substrate 140; a first gas source 160 configured to provide a first gas; a second gas source 170 configured to provide a second gas; an inert gas source 180 configured to provide an inert gas; and a gas passage 190 configured to couple into the interior of the upper reaction chamber assembly 110A.

[0024] The upper chamber assembly 110A may include a plurality of parts and ports to allow for gas hookup. The lower chamber assembly 110B may include a plurality of rings and spacer plates. The susceptor 120 may include a heater to heat the substrate 140. The gas distribution apparatus 150 is shown as a showerhead arrangement, but other gas distribution arrangements may be employed, such as a cross-flow gas distribution apparatus or an injection rake.

[0025] In various embodiments, to achieve a desired result from a process within a reaction chamber (e.g., material deposition or etching on a substrate), a pedestal (e.g., pedestal 120) may be positioned within the reaction chamber. For example, to achieve uniform material deposition on and above a substrate, pedestal 120 may be positioned in the center of the reaction chamber such that the side(s) of pedestal 120 are uniformly spaced from the reaction chamber's interior sidewall(s) (e.g., lower reaction chamber assembly 110B). If such spacing between the pedestal and the reaction chamber's interior sidewalls is uneven, a portion of the substrate may be subjected to a greater amount of reactant gas within the reaction chamber than another portion of the substrate, resulting in uneven material deposition (i.e., undesirable results).

[0026] Figure 2The diagram shows a bird's-eye view of the lower chamber assembly 200. The lower chamber assembly includes: a susceptor 210; a flow control ring 220; and a spacer plate 230. The alignment of these three components can significantly affect the uniformity of a thin film deposited on a substrate disposed on the susceptor 210.

[0027] A flow control ring 220 surrounds the base 210 and may be responsible for regulating the flow of gas to the exhaust port. The flow control ring 220 may include materials such as quartz, ceramic, or metals such as titanium, aluminum, stainless steel, or Hastelloy, as examples. A spacer plate 230 may surround the flow control ring 220 and provide a surface for mounting the flow control ring 220. The spacer plate 230 may include materials such as titanium, aluminum, stainless steel, or Hastelloy, as examples.

[0028] Figure 3 The figure illustrates a laser alignment fixture 300 according to at least one embodiment of the present invention. Laser alignment fixture 300 is designed to fit directly onto lower chamber assembly 200 and can sense the position of at least susceptor 210 and flow control ring 220. Laser alignment fixture 300 can be placed on top of lower chamber assembly 200 using a lift. Laser alignment fixture 300 includes a lid assembly 310 and a laser and sensor assembly 320. Lid assembly 310 can be comprised of materials such as titanium, aluminum, stainless steel, or Hastelloy alloy.

[0029] Figure 3 Shown are multiple laser and sensor assemblies 320 disposed on top of lid assembly 310. Laser and sensor assemblies 320 are shown as being equidistantly disposed on base 210 and flow control ring 220. At least three laser and sensor assemblies 320 may be required to provide accurate measurement and alignment of components in lower reaction chamber assembly 200.

[0030] Figure 4 The figure illustrates a side view of a laser alignment fixture 300 according to at least one embodiment of the present invention as it is positioned on a lower chamber assembly 200. The lower chamber assembly 200 includes a substrate heater 210A, a substrate holder 210B, a flow control ring 220, a spacer plate 230, and a lower chamber sidewall 240. For ease of illustration, O-rings and other components that allow for sealing between the various parts of the lower chamber assembly 200 and the laser alignment fixture 300 are omitted from the figure.

[0031] The laser alignment fixture 300 includes a lid assembly 310, a laser and sensor assembly 320, and a quartz viewing port 330. The laser and sensor assembly 320 may include a bracket mounted on the lid assembly, which also contains the laser and sensor disposed above the quartz viewing port 330. The laser and sensor assembly 320 is positioned to be able to view at least one of the following: the substrate holder 210B, the flow control ring 220, and the spacer plate 230.

[0032] Figure 5 The laser alignment fixture 300 is illustrated as a laser in the laser and sensor assembly 320 generates light 340. The light 340 is incident on at least one of: the substrate holder 210B; the flow control ring 220; or the spacer plate 230. The light 340 is reflected from at least one component of the lower reaction chamber assembly 200 (not shown) back to a light sensor disposed in the laser and sensor assembly 320.

[0033] Figure 6 A schematic diagram of a laser alignment fixture according to at least one embodiment of the present invention is shown. The laser alignment fixture includes a laser and sensor assembly 320. The laser and sensor assembly 320 includes a laser 340 and a light sensor 350. The laser 340 may include a laser source packaged by Keyence. The light sensor 350 may include a sensor packaged by Keyence.

[0034] The signal generated by the light sensor 350 may then be sent to the base controller 360. The base controller 360 may then determine to adjust the position of the base 120 by providing movement instructions to the base positioning system 130.

[0035] The pedestal controller 360 may include a computer or a human operator. Where the pedestal controller 360 includes a computer, automated instructions may be sent to the pedestal positioning system 130 to cause automated operation of the laser alignment fixture.

[0036] Benefits and other advantages have been described herein with respect to specific embodiments. In addition, the connecting lines shown in the various figures included herein are intended to represent exemplary functional relationships and / or physical connections between the various elements. It should be noted that many alternative or additional functional relationships or physical connections may exist in actual systems. However, benefits, advantages, solutions to problems, and any elements that may cause any benefits, advantages, or solutions to appear or become more significant should not be interpreted as key, essential, or necessary features or elements of the present disclosure. Therefore, the scope of the present disclosure is limited only by the appended claims, in which elements mentioned in the singular are not intended to mean "one and only one" unless explicitly stated otherwise, but rather "one or more". In addition, when a phrase similar to "at least one of A, B, or C" is used in a claim, it is intended that the phrase be interpreted as indicating that A can exist alone in one embodiment, B can exist alone in one embodiment, C can exist alone in one embodiment, or any combination of elements A, B, and C can exist in a single embodiment; for example, A and B, A and C, B and C, or A and B and C.

[0037] Systems, methods, and apparatus are provided herein. In the detailed description herein, references to "one embodiment," "an embodiment," "an exemplary embodiment," etc. indicate that the described embodiment may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases do not necessarily refer to the same embodiment. In addition, when a particular feature, structure, or characteristic is described in conjunction with an embodiment, it is considered that it is within the knowledge of those skilled in the art to affect such feature, structure, or characteristic in conjunction with other embodiments. It is not explicitly described. After reading the specification, it will be apparent to those skilled in the relevant art how to implement the present disclosure in alternative embodiments.

[0038] Furthermore, regardless of whether an element, component, or method step of the invention is explicitly recited in the claims, it is not intended to be dedicated to the public. No claim element herein may be interpreted under the provisions of 35 U.S.C. (f) unless explicitly referenced using the phrase "a mechanism for..." As used herein, two or more components are "coupled" to indicate physical, mechanical, fluid, and / or electrical coupling, as may be determined by the respective context. As used herein, the terms "comprise," "include," or any other variant thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a series of elements includes not only those elements, but may also include other elements not explicitly listed or other elements inherent to such processes, methods, articles, or apparatus.

Claims

1. A laser alignment fixture for a reactor system for depositing a thin film on a substrate, comprising: a cover assembly configured to be placed on the reactor system, the cover assembly including a viewing window; a plurality of laser and sensor assemblies disposed on the cover assembly; Wherein the reactor system comprises: a susceptor, wherein the susceptor is configured to receive a substrate thereon; a base positioning system configured to move the base along an xy plane; a flow control ring disposed on an outer edge of the base; and a spacer plate contacting the flow control ring and disposed on an outer edge of the flow control ring; wherein the plurality of laser and sensor assemblies illuminate and sense light for determining alignment of the susceptor, the flow control ring, and the spacer plate; and wherein the light is used to adjust the position of the base using the base positioning system. 2 . The laser alignment fixture of claim 1 , wherein the cover assembly comprises at least one of: titanium, aluminum, stainless steel, or Hastelloy. The laser alignment fixture of claim 1 , wherein the viewing window comprises quartz.

4. The laser alignment fixture of claim 1 , wherein each of the plurality of laser and sensor assemblies comprises: Lasers and light sensors.

5. The laser alignment fixture of claim 1, further comprising a base controller configured to receive signals from the plurality of lasers and sensor assemblies.

6. The laser alignment fixture of claim 5, wherein the base controller provides instructions to the base positioning system to move the base.

7. The laser alignment fixture of claim 5, wherein the base controller comprises a human operator.

8. The laser alignment fixture of claim 5, wherein the base controller comprises a computer.

9. The laser alignment jig according to claim 1, wherein: The plurality of laser and sensor assemblies includes at least three laser and sensor assemblies.

10. The laser alignment jig according to claim 9, wherein: The plurality of laser and sensor assemblies are equidistantly positioned across the base and flow control ring.

11. The laser alignment jig according to claim 10, wherein: The plurality of laser and sensor assemblies consists of three laser and sensor assemblies, wherein each of the plurality of laser and sensor assemblies is disposed over an edge of the substrate and disposed 120 degrees from one another.

12. The laser alignment fixture of claim 1, wherein: The viewing window comprises quartz.

13. The laser alignment fixture of claim 1, wherein: The spacer plates include a material selected from titanium, aluminum, stainless steel, or Hastelloy.

Images