Adjustable multi-zone electrostatic chuck

Abstract

Embodiments described herein provide a method for processing a substrate on a substrate support assembly that achieves both lateral and azimuthal adjustment of heat transfer between an electrostatic chuck and the substrate. The method includes the steps of processing a first substrate using a first temperature profile on an electrostatic chuck (ESC) having a main heater and a spatially adjustable heater. Determining an offset profile that deviates from a target result profile from a result of processing the first substrate. Based on the offset profile, adjusting the first temperature profile to a second temperature profile on the ESC. Adjusting to the second temperature profile includes incrementally increasing power provided to one or more spatially adjustable heaters in one or more discrete locations corresponding to the offset profile. Then, processing a second substrate on the ESC using the second temperature profile.

Description

[0001] This application is a divisional application of application No. 201680023970.0, filed on January 13, 2016, and entitled “Position-Adjustable Multi-Region Electrostatic Clamp”. Technical Field

[0002] Embodiments described herein relate generally to semiconductor manufacturing, and more particularly to real-time temperature control of an electrostatic chuck and methods of using the same. Background Art

[0003] As device pattern feature sizes become smaller, the critical dimension (CD) requirements of these features become a more important criterion for stable and repeatable device performance. Due to chamber asymmetries such as chamber and substrate temperature, flow conductivity, and RF field, acceptable CD variations across substrates processed within a process chamber are difficult to achieve.

[0004] In processes using an electrostatic chuck, uniform temperature control across the substrate surface becomes even more challenging due to the non-homogeneous structure of the chuck beneath the substrate. For example, some areas of the electrostatic chuck have air holes, while other areas have lift pin holes that are laterally offset from the air holes. Still other areas have clamping electrodes, while other areas have heater electrodes that are laterally offset from the clamping electrodes. Because the structure of the electrostatic chuck can vary both laterally and azimuthally, uniform heat transfer between the chuck and the substrate is complex and very difficult to achieve, resulting in localized hot and cold spots across the chuck surface, which in turn leads to non-uniform processing results across the substrate surface.

[0005] The lateral and azimuthal nonuniformity of heat transfer between the chuck and substrate is further complicated by the heat transfer scheme typically employed in conventional cooling plates, to which the electrostatic chuck is mounted to form the substrate support assembly. For example, conventional cooling plates typically only have edge-to-center temperature control. Furthermore, during production runs, as substrates are moved in and out of the processing chamber, the temperature profile of the cooling plate can vary for each substrate. Consequently, localized hot and cold spots within the electrostatic chuck can be difficult to control when utilizing the heat transfer features of conventional substrate supports during production runs.

[0006] Therefore, there is a need for an improved substrate support assembly. Summary of the Invention

[0007] Embodiments described herein provide a method and apparatus for processing a substrate on a substrate support assembly that enables both lateral and azimuthal adjustment of heat transfer between an electrostatic chuck (ESC) and the substrate. The method includes the steps of processing a first substrate using a first temperature profile on the ESC, the ESC having a main heater and a spatially adjustable heater. Determining an offset profile that deviates from a target result profile from a result of processing the first substrate. Adjusting the first temperature profile to a second temperature profile on the ESC based on the offset profile includes the steps of incrementally increasing power supplied to one or more spatially adjustable heaters in one or more discrete locations corresponding to the offset profile. Then, processing a second substrate on the ESC using the second temperature profile. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Therefore, so that the manner in which the above-described features of the present invention may be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to its various embodiments, some of which are depicted in the accompanying drawings. It is noted, however, that the appended drawings depict only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

[0009] Figure 1 is a schematic top view of a multi-chamber vacuum processing system having at least one processing chamber;

[0010] Figure 2 A schematic side view, partially in section, detailing a portion of a substrate support assembly having a spatially adjustable heater;

[0011] Figures 3A to 3D A top view of a substrate support assembly depicting an example arrangement of spatially adjustable heaters;

[0012] Figure 4 A diagram of one architecture of a system suitable for storing and executing software routines in which embodiments of the present invention may be implemented;

[0013] Figure 5 is a flow chart for determining a process recipe for a spatially adjustable heater according to one embodiment;

[0014] Figure 6 is a flow chart for determining a process recipe for a spatially adjustable heater according to another embodiment;

[0015] Figure 7 is a flow chart for determining a process recipe for a spatially adjustable heater according to yet another embodiment.

[0016] To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures. It will be appreciated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation. DETAILED DESCRIPTION

[0017] Embodiments described herein provide a method for controlling a spatially adjustable heater that enables discrete lateral and azimuthal adjustments to the temperature profile of a substrate support assembly, which in turn allows for both lateral and azimuthal adjustments to the lateral temperature profile of a substrate being processed on the substrate support assembly. Furthermore, the method enables localized hot or cold spots on the substrate to be substantially eliminated.

[0018] Although the substrate support assembly with a spatially adjustable heater is described below in the context of an etch processing chamber, the substrate support assembly can be used in other types of plasma processing chambers, such as physical vapor deposition chambers, chemical vapor deposition chambers, ion implantation chambers, and other systems where azimuthal adjustment of the lateral temperature profile is desired. It is also contemplated that the spatially adjustable heater can be used to control the temperature of other surfaces, including those not used for semiconductor processing.

[0019] In one or more embodiments, a method for controlling the temperature distribution of a substrate support assembly may allow correction of critical dimension (CD) variations at the edge of a substrate during vacuum processes (such as etching, deposition, implantation, etc.) by allowing the substrate temperature to be used to compensate for chamber non-uniformities, such as temperature, flow conductivity, electric field, plasma density, etc.

[0020] As will be appreciated by those skilled in the art, aspects of the present invention may be embodied as a system, method, or computer program product. Accordingly, embodiments of the present disclosure may take the form of entirely hardware embodiments, entirely software embodiments (including firmware, resident software, microcode, etc.), or embodiments combining software and hardware aspects, which may be referred to herein as "circuits," "modules," or "systems." Furthermore, embodiments of the present disclosure may take the form of a computer program product embodied in one or more computer-readable media having computer-readable program code embodied thereon.

[0021] Any combination of one or more computer-readable media can be used to store a program product that, when executed, is configured to perform a method for programming preventive maintenance events. The computer-readable medium can be a computer-readable signal medium or a computer-readable storage medium. The computer-readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or apparatus, or any suitable combination of the foregoing. More specific examples (a non-exhaustive list) of computer-readable storage media would include the following: a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of this document, a computer-readable storage medium can be any tangible medium that can contain or store a program for use by or in connection with an instruction execution system, device, or apparatus.

[0022] A computer-readable signal medium may include a propagated data signal having computer-readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated signal may take any of a variety of forms, including but not limited to electromagnetic, optical, radio, or any suitable combination thereof. A computer-readable signal medium may be any computer-readable medium that is not a computer-readable storage medium and may communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device.

[0023] Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.

[0024] Computer program code for carrying out operations of various aspects of the present invention may be written in any combination of one or more programming languages, including object-oriented programming languages such as JAVA. TM SMALLTALK TM 、C ++Etc., and traditional program programming languages, such as "C" programming language or similar programming languages. The program code can be executed completely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or completely on a remote computer or server. In the latter case, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be to an external computer (e.g., using an Internet Service Provider (ISP) through the Internet).

[0025] The computer program instructions may also be loaded into a computer, other programmable data processing device, or other apparatus to cause a series of operational steps to be executed on the computer, other programmable device, or other apparatus to produce a computer-implemented program, so that the instructions executed on the computer or other programmable device provide a program for implementing the functions / actions specified in the flowchart and / or block diagram.

[0026] Embodiments of the present disclosure may be provided to end users via a cloud computing infrastructure. Cloud computing refers to the provision of scalable computing resources as a service over a network. More formally, cloud computing can be defined as providing an abstract computing capability between computing resources and their underlying technology infrastructure (e.g., servers, storage, networks), facilitating convenient, on-demand network access to a shared pool of configurable computing resources that can be quickly provisioned and released with minimal management effort or service provider interaction. Thus, cloud computing allows users to access virtual computing resources (e.g., storage, data, applications, and even completely virtual computing systems) in a "cloud" without having to consider the underlying physical systems (or the location of those systems) used to provide the computing resources.

[0027] Typically, cloud computing resources are provided to users on a pay-per-use basis, where the user is charged only for the computing resources actually used (e.g., the amount of storage space consumed by the user, or the amount of virtual systems brought to life by the user). A user can access any resource residing in the cloud at any time, as well as any resource from anywhere across the Internet. In the context of the present invention, a user can access a software routine (e.g., a method for detecting a break in one or more ground straps) or related data available in the cloud. For example, the software routine can be executed on a computing system in the cloud. In this case, the software routine can maintain spatial and non-spatial data at a storage location in the cloud. Doing so can allow a user to access this information from any computing system attached to a network connected to the cloud (e.g., the Internet).

[0028] Figure 1FIG1 is a schematic top view of a multi-chamber vacuum processing system 100 having at least one processing chamber 120. The multi-chamber vacuum processing system 100 also includes a system controller 160, a vacuum-sealed processing platform 110, and a factory interface 140. The multi-chamber vacuum processing system 100 may additionally be connected to an advance process controller (APC) 180. The APC 180 may include a database 182 and a computing platform 184. The APC 180 may be optionally used in addition to the system controller 160 and integrates multiple process tools 102 at a fabrication facility. The APC 180 may track operations on substrates being fabricated therein and store measurements on the substrates.

[0029] The factory interface (FI) 140 may have a plurality of front opening universal units (FOUPs) 144 and at least one FI robot 142. The FI 140 may also have additional stations, such as a metrology station 150. The metrology station 150 may alternatively be located adjacent to the FOUP 144. The FI robot 1420 may have tracks and a movable end effector, which may be a blade, a plurality of fingers, a gripper, or other suitable device for transferring substrates 118 thereon. The FI robot 142 may operate under atmospheric conditions and be configured to have a range of motion sufficient to transfer substrates 118 disposed on the movable end effector between the FOUP 144, the metrology station 150, and one or more load lock chambers 134, 132 of the processing system 100. The FOUP 144 may hold a plurality of substrates 118 for transferring the substrates 118 to and from the multi-chamber vacuum processing system 100. For example, the FOUP 144 may move a substrate 118 being processed on the multi-chamber vacuum processing system 100 to a separate metrology station, chemical polishing station, or other equipment for further processing.

[0030] The load lock chambers 134, 132 are disposed between the factory interface 140 and the vacuum-sealed process platform 110 to facilitate transfer of substrates 118 between the substantially ambient environment maintained in the factory interface 140 and the vacuum environment maintained in the vacuum-sealed process platform 110. The load lock chambers 134, 132 have one or more inlet / outlet slots (not shown) through which substrates 118 can be transferred from the factory interface 140 into and out of the load lock chambers 134, 132. Likewise, the load lock chambers 134, 132 have the same number of inlet / outlet slots through which substrates 118 can be transferred between the interior of the load lock chambers 134, 132 and the vacuum-sealed process platform 110. Each inlet / outlet slot of the load lock chambers 134, 132 is selectively sealed by a slit valve (not shown) to isolate the interior of the load lock chambers 134, 132 from the interior of the factory interface 140 or the vacuum-sealed process platform 110.

[0031] In addition to the load lock chambers 134, 132, the vacuum sealed processing platform 110 has a plurality of attachment chambers 120 disposed around the transfer chamber 130. The transfer chamber 130 is coupled to a vacuum system (not shown) to provide a reduced pressure condition in the vacuum sealed processing platform 110. The transfer chamber 130 houses at least one transfer chamber robot 114. The transfer chamber robot 114 can rotate to transfer a substrate 118 within any chamber 120. One or more of the attachment chambers 120 may include a substrate support assembly 200 (shown in FIG. 1 ) for processing the substrate 118 thereon. Figure 2 18. The process of processing the substrate 118 may be performed in a manner that is suitable for use with an etching chamber or deposition chamber (e.g., a chemical vapor deposition chamber, a physical vapor deposition chamber, or an atomic layer deposition chamber) in a process. Additionally, one of the attached chambers 120 may be a metrology chamber 152 (having metrology equipment to measure properties of the substrate 118), an orientation chamber, a degassing chamber, or other suitable chamber for processing the substrate 118. In some embodiments, one chamber 120 may simultaneously etch and measure the substrate 118. For example, the metrology equipment for measuring properties of the substrate 118 may be incorporated into the chamber 120. Alternatively, the metrology equipment for measuring properties of the substrate 118 may be located in the transfer chamber 130, the FI 140, or another convenient location.

[0032] The system controller 160 is coupled to and controls each chamber 120 and / or module of the multi-chamber vacuum processing system 100. Generally, the system controller 160 can control all aspects of the operation of the processing system 100 using direct control of the chambers and equipment of the processing system 100, or alternatively, by controlling computers associated with these chambers and equipment. Furthermore, the system controller 160 can also be configured to communicate with a control unit associated with the transfer chamber robot 114 and other controllers via the APC 180. For example, the movement of the transfer chamber robot 114 (transferring substrates 118 to and from the processing chambers 120 and executing process sequences, coordinating the operation of various components of the multi-chamber vacuum processing system 100, etc.) can be controlled by the system controller 160. Furthermore, the system controller 160 can control process recipes within the processing chambers 120. For example, the system controller can control vacuum, chamber temperature, substrate support surface temperature profile, gas flow rates, and various other processing parameters of the process recipe. In operation, the system controller 160 implements feedback from the respective chambers and tools to optimize substrate throughput.

[0033] The system controller 160 will be related to Figure 4As discussed below, the system controller 160 can change the process recipe for the substrate 118 being processed in the chamber 120. The system controller 160 can use feedback from the metrology equipment to determine changes to the process recipe. The metrology equipment can measure critical dimensions across the substrate 118 and change process parameters (e.g., local temperature across the substrate support assembly) to modify the local process.

[0034] Figure 2 Detailed is a schematic side view in partial cross-section of a portion of a substrate support assembly 200 configured to provide azimuth adjustment of the temperature distribution across the substrate support assembly. The azimuth adjustment of the temperature distribution across the substrate support assembly 200 may be controlled by a software routine running on the controller 160. The software routine may also or alternatively be stored and / or executed by a second controller (not shown) remote from the multi-chamber vacuum processing system 100, such as at the processing chamber 120 or the APC 180.

[0035] The substrate support assembly 200 generally includes at least a substrate support 210. The substrate support 210 can be a vacuum chuck, an electrostatic chuck, a pedestal, or other workpiece support surface. In one embodiment, the substrate support 210 is an electrostatic chuck and will be referred to hereinafter as the electrostatic chuck 210. The substrate support assembly 200 can also include a cooling pedestal 260. The cooling pedestal 260 can alternatively be separate from the substrate support assembly 200. The substrate support assembly 200 is removably coupled to a support base 205. The support base 205 can include a pedestal base 244. The substrate support assembly 200 can be periodically removed from the support base 205 to allow for refurbishment of one or more components of the substrate support assembly 200.

[0036] The electrostatic chuck 210 has a mounting surface 203 and a workpiece support surface 202 opposite the mounting surface 203, wherein the substrate 118 is removably disposed on the workpiece support surface 202. The electrostatic chuck 210 generally includes a clamping electrode 207 embedded in a dielectric body 208. Although the clamping electrode 207 is depicted proximate to the mounting surface 203 of the electrostatic chuck 210, the clamping electrode 207 may be embedded in other portions of the electrostatic chuck 210, such as just below the workpiece support surface 202. The clamping electrode 207 may be configured as a monopolar or bipolar electrode, or other suitable arrangement. The clamping electrode 207 is coupled to a clamping power supply 206 through an RF filter 204, which provides RF or DC power to electrostatically secure the substrate 118 to the workpiece support surface 202 of the electrostatic chuck 210. The RF filter 204 prevents the RF power used to form the plasma within the processing chamber 120 from damaging electrical equipment or presenting an electrical hazard outside the chamber.

[0037] The dielectric body 208 of the electrostatic chuck 210 can be made of a ceramic material, such as AlN or Al2O3. Alternatively, the dielectric body 208 can be made of a polymer, such as polyimide, polyetheretherketone, polyaryletherketone, etc. A heater can be embedded within the dielectric body 208. The dielectric body 208 can include one or more main resistive heaters 212 and / or a plurality of spatially adjustable heaters 214. The main resistive heaters 212 can be provided to elevate the temperature of the substrate support assembly 200 to a temperature used for conducting chamber processes, such as processing the substrate 118 and / or cleaning the interior of the processing chamber 120. The main resistive heaters 212 can be configured to provide any one or more laterally separated heating zones, for example, a plurality of concentric annular zones. The spatially adjustable heaters 214 are complementary to the main resistive heaters 212 and are configured to adjust the local temperature of the electrostatic chuck 210 at a plurality of discrete locations within any one or more of the plurality of laterally separated heating zones defined by the main resistive heaters 212. For example, the spatially adjustable heaters 214 may be arranged in a polar array, a Cartesian grid of columns and rows, a hexagonal grid, or other suitable matrix. The spatially adjustable heaters 214 thus provide for local adjustment of the temperature distribution of a substrate 118 placed on the substrate support assembly 200. Thus, the primary resistive heaters 212 operate to maintain the temperature distribution on the workpiece support surface 202 on a global macroscale, while the spatially adjustable heaters 214 operate to adjust the temperature at discrete locations of the temperature distribution on the workpiece support surface 202 on a local microscale.

[0038] The main resistive heater 212 and the spatially adjustable heater 214 are coupled to a heater power supply 222 through an RF filter 218. The heater power supply 222 can provide 900 watts or more of power to the heaters 212, 214. The controller 160 can control the operation of the heater power supply 222, which is generally configured to provide power to each heater 212, 214 to heat the substrate 118 to a predetermined temperature profile. In one embodiment, the main resistive heater 212 includes laterally separated heating zones, wherein the controller 160 enables preferential heating of one zone of the main resistive heater 212, or even a single spatially adjustable heater 214, relative to adjacent heaters 212, 214. In some embodiments, each spatially adjustable heater 214 can be independently controlled to provide a different temperature than another spatially adjustable heater 214. In some embodiments, multiple (such as at least two and up to all) spatially adjustable heaters 214 are independently and simultaneously powered to provide a very stable temperature distribution that does not jump around, which produces a stable and easily controllable temperature distribution that helps improve the uniformity and predictability of substrate processing results.

[0039] The electrostatic chuck 210 may include one or more temperature sensors 254. The temperature sensors 254 may measure the temperature at a plurality of discrete locations on the workpiece support surface 202. The temperature sensors 254 may provide temperature feedback information to the controller 160 for controlling the power applied by the heater power supply 222 to the main resistive heater 212 and the spatially adjustable heater 214. In addition, the feedback information may be used to control the operation of the cooling pedestal 260.

[0040] The electrostatic chuck 210 can be disposed on a temperature-controlled cooling pedestal 260. The temperature-controlled cooling pedestal 260 is coupled to a heat transfer fluid source 262. The heat transfer fluid source 262 provides a heat transfer fluid, such as a liquid, a gas, or a combination thereof, that circulates through one or more conduits 290 disposed in the cooling pedestal 260. The controller 160 can control the flow of fluid through isolated adjacent conduits 290 to achieve localized control of heat transfer between different areas of the electrostatic chuck 210 and the cooling pedestal 260, which helps control the lateral temperature distribution of the substrate 118.

[0041] The pedestal base 244 is disposed below the cooling pedestal 260 and is configured to house a plurality of drive mechanisms configured to raise and lower a plurality of lift pins. Furthermore, the pedestal base 244 is configured to house a plurality of fluid connections from the electrostatic chuck 210 and the cooling pedestal 260. The pedestal base 244 is also configured to house a plurality of electrical connections from the electrostatic chuck 210. Numerous connections (e.g., fluid, electrical, data signals) may be run externally or internally to the substrate support assembly 200.

[0042] The system controller 160 may include a controller board 250, which may be disposed within the pedestal base 244. Alternatively, the controller board 250 may be disposed elsewhere within or outside the substrate support assembly 200. The controller board 250 may include a pulse width modulation (PWM) heater controller 216. The controller board 250 may also include an optical communication interface board 256. The controller board 250 may also optionally include a temperature sensor controller 252.

[0043] The temperature sensor controller 252 may be communicatively coupled to a temperature sensor 254 for measuring the temperature of the substrate 118. The temperature sensor controller 252 may convert signals from the temperature sensor 254 into actual temperature readings at discrete locations relative to the workpiece support surface 202. The controller board 250 may also optionally include a metrology controller (not shown) for determining the thickness of the substrate 118 disposed on the workpiece support surface 202.

[0044] A PWM heater controller 216 can be connected to the heaters 212 and 214. The PWM heater controller 216 can modify the power supplied from the heater power supply 222 to each heater 212 and 214. The PWM heater controller 216 can be programmed and calibrated by measuring the temperature at each spatially adjustable heater 214. In other words, each spatially adjustable heater 214 has its own independent PWM control. The PWM heater controller 216 can control the temperature by adjusting the power parameters of each spatially adjustable heater 214. For example, 100% power to one of the spatially adjustable heaters 214 can produce a heat output of approximately 5 degrees Celsius, which is used to increase the temperature set by the main heater for the surface location above the spatially adjustable heater 214. Additionally, 20% power to one or more of the spatially adjustable heaters 214 can produce a heat output of approximately 1 degree Celsius, which is used to increase the temperature set by the main heater for the surface location above the spatially adjustable heater 214. The power to several of the spatially adjustable heaters 214 can be reduced to 20% and maintained at that level throughout the entire process. Furthermore, the PWM heater controller 216 can operate one or more spatially adjustable heaters 214 at a first power level (e.g., 80%) while simultaneously operating one or more separate spatially adjustable heaters 214 at a second power level (e.g., 20%). In one embodiment, the temperature can be adjusted using incremental power increases to the spatially adjustable heaters 214. For example, a temperature increase can be achieved during the course of a process using a percentage increase (e.g., a 9% increase) in the power supplied to the spatially adjustable heaters 214. In another embodiment, the temperature can be adjusted by cycling a spatially adjustable heater 214 on and off while other adjustable heaters 214 are also cycled on and off in phase or out of phase. In yet another embodiment, the temperature can be adjusted by cycling and incrementally adjusting the power to the spatially adjustable heaters 214, in combination with adjusting the power levels as needed to maintain a desired temperature profile.

[0045] A temperature map can be obtained by simultaneously varying the heat output of each individual spatially adjustable heater 214. The map can correlate the CD or substrate temperature distribution to the power profile of each spatially adjustable heater 214. Thus, based on programmed power settings for each spatially adjustable heater 214, the spatially adjustable heaters 214 can be used to generate a temperature distribution across the substrate. The logic can be placed directly in the PWM heater controller 216 or in an externally connected controller, such as the controller 160. Thus, the PWM heater controller 216 is configured to independently control the output of one of the plurality of spatially adjustable heaters 214 relative to another of the plurality of spatially adjustable heaters 214 and the main resistive heater 212.

[0046] The optical communication interface board 256 can interface with the PWM heater controller 216. The optical communication interface board 256 can also interface with other controllers, such as the temperature sensor controller 252. The optical communication interface board 256 can have an optical connection to an optical converter 258. The optical interface board 256 can send optical signals to the optical converter 258 to communicate with the controller 160. Thus, communication between the PWM heater controller 216 and the controller 160 can be performed using optical signals that do not destroy RF energy. For example, the controller 160 can send signals to control the heat output of one or more of the spatially adjustable heaters 214 to adjust the temperature profile of the substrate 118 disposed on the electrostatic chuck 210. Before delivering the commands to the PWM heater controller 216 for controlling the heating profile of the substrate 118 during processing, the signal commands from the controller 160 can be entered into the optical converter 258 for transmission to the optical communication interface board 256. A benefit of the optical communication interface board 256 is the ability to prevent RF power from traveling through the control circuitry and out of the substrate support assembly 200.

[0047] The surface temperature of the substrate 118 in the processing chamber 120 can be affected by factors such as the pumps that exhaust process gases, flow valves, plasma, and other factors. The controller 160 may include a temperature profile map for the substrate 118 to achieve high-quality processing results. The controller 160 may receive input from metrology equipment or other processing equipment to correct for drift or adverse trends in the process results for the substrate 118. For example, one area of the substrate 118 may etch faster than another area of the substrate 118. The controller 160 may send signals to the spatially adjustable heaters 214 to adjust the surface temperature of the substrate 118 in areas with deviating etch rates. The controller 160 may activate the spatially adjustable heaters 214 in a pattern shaped similar to these areas. The spatially adjustable heaters 214 improve the temperature distribution on the surface of the substrate 118 produced by the main resistive heater 212 by reducing the variation in the temperature distribution to approximately + / - 0.3 degrees Celsius. By using the spatially adjustable heaters 214, the temperature distribution across areas of the substrate 118 can be made uniform or precisely altered in a predetermined manner to achieve desired results. The use of independently controllable spatially adjustable heaters 214 to smooth or correct the temperature distribution produced by the main resistive heaters 212 enables control of local temperature uniformity across the substrate to very close tolerances, thereby enabling precise processing and CD control when processing the substrate 118. Furthermore, the small size and high density of the spatially adjustable heaters 214 relative to the main resistive heaters 212 enables temperature control at specific locations on the substrate support assembly 200 without substantially affecting the temperature of adjacent areas, thereby allowing local hot and cold spots to be compensated for without introducing skew or other temperature asymmetries.

[0048] It is contemplated that in a given embodiment of a substrate support assembly 200 configured for use with a 300 mm substrate, there may be from about 200 to about 400 (or even more) spatially adjustable heaters 214. It is contemplated that for substrates of 450 mm or greater, there may be even more spatially adjustable heaters 214. Exemplary distributions of the spatially adjustable heaters 214 are further described. Figures 3A to 3D The description is as follows.

[0049] Figures 3A to 3D is a top view of an electrostatic chuck 210 , depicting an example layout of a unit 390 having spatially adjustable heaters 214 therein. Figure 3A According to one embodiment Figure 2 A top view of the electrostatic chuck 210 is shown. Figures 3B to 3D According to an alternative embodiment Figure 22. A top view of the electrostatic chuck 210 is shown. The cells 390 may have material (or gaps) that act as thermal chokes 316 between adjacent cells 390. The thermal chokes 316 separate and reduce conduction between adjacent cells 390. Thus, by individually and independently controlling the power provided to each spatially adjustable heater 214 in each cell 390, a localized method for controlling temperature may be achieved, enabling specific points on the substrate 118 to be heated or cooled, thereby achieving truly addressable lateral temperature distribution adjustment and control across the surface of the substrate 118.

[0050] Now see Figure 3A , a thermal choke 316 is disposed between each adjacent cell 390. Each cell 390 has at least one of the spatially adjustable heaters 214 associated therewith. The number of cells 390 shown is merely illustrative, and any number of embodiments may have substantially more (or fewer) cells 390. The number of spatially adjustable heaters 214 may be at least an order of magnitude greater than the number of primary resistive heaters 212. The number of spatially adjustable heaters 214 positioned across the substrate support assembly 200 may easily exceed several hundred.

[0051] The spatially adjustable heaters 214 can be arranged in a pattern 399 to efficiently generate a heat distribution along the surface of the electrostatic chuck 210. The pattern 399 can be symmetrical about the midpoint 392 while providing clearance in and around the aperture 322 for lift pins or other mechanical, fluidic, or electrical connections. Each spatially adjustable heater 214 can be controlled by the controller 160 via a PWM controller 216. The PWM controller 216 can activate a single spatially adjustable heater 214 defining a localized area 340; or activate multiple spatially adjustable heaters 214 grouped to define an inner wedge 362, a perimeter group 364, a pie-shaped area 330, or other desired geometric configurations for determining a desired temperature distribution, including non-contiguous configurations. In this way, temperature can be accurately controlled at independent locations along the surface of the electrostatic chuck 210, not limited to concentric rings or other center-to-edge configurations known in the art. Although the illustrated pattern 399 includes discrete smaller units, the pattern 399 may alternatively have larger and / or smaller units, extend to edges, or have other forms. Figure 3A In the depicted embodiment, the pattern 399 of spatially adjustable heaters 214 is arranged in a polar array about a midpoint 392 , which in some embodiments may coincide with the centerline of the electrostatic chuck 210 .

[0052] Figure 3B According to another embodiment Figure 2. The spatially adjustable heaters 214 are arranged in a grid pattern, thereby defining an array of temperature control units 390 that are also arranged in a grid pattern. Although the grid pattern of the spatially adjustable heaters 214 is illustrated as an X / Y (Cartesian) grid comprising columns and rows, the grid pattern of the spatially adjustable heaters 214 may alternatively have some other uniformly packed form, such as a densely packed hexagonal pattern. It should be understood that, as discussed above, the spatially adjustable heaters 214 may be activated in groups or individually.

[0053] Figure 3C According to another embodiment Figure 2 FIG. 2 is a top view of the electrostatic chuck 210 shown in FIG. Figure 3C A plurality of spatially adjustable heaters 214 are depicted arranged in a polar array. Optionally, one or more thermal chokes 316 may be positioned between the spatially adjustable heaters 214. The polar array pattern of the spatially adjustable heaters 214 defines adjacent cells 390, which are thus also arranged in a polar array. Optionally, thermal chokes 316 may be used to isolate each cell 390 from adjacent cells 390.

[0054] Figure 3D According to another embodiment Figure 2 FIG. 2 is a top view of the electrostatic chuck 210 shown in FIG. Figure 3D A plurality of spatially adjustable heaters 214 are illustrated as being arranged in concentric channels. The concentric channel pattern of spatially adjustable heaters 214 may be selectively separated by thermal chokes 316. It is contemplated that the spatially adjustable heaters 214 and units 390 may be arranged in other orientations.

[0055] The number and density of spatially adjustable heaters 214 facilitate the ability to control temperature uniformity across the substrate to very close tolerances, which enables precise processing and CD control when processing substrates 118. Furthermore, independent control of one of the spatially adjustable heaters 214 relative to another spatially adjustable heater 214 enables temperature control at discrete locations along the surface of the substrate support assembly 200 without substantially affecting the temperature of adjacent or neighboring areas of the surface. This feature allows local hot and cold spots to be compensated for without introducing skew or other temperature asymmetries. The spatially adjustable heaters 214 can have individual temperature ranges between approximately 0.0 degrees Celsius and approximately 10.0 degrees Celsius, with the ability to control temperature increases in increments of approximately 0.1 degrees Celsius. In one embodiment, multiple spatially adjustable heaters 214 in the substrate support assembly 200, in conjunction with the main resistive heater 212, have been demonstrated to be capable of controlling the temperature uniformity of substrates 118 processed thereon to less than approximately ±0.3 degrees Celsius. Thus, the spatially adjustable heater 214 allows for both lateral and azimuthal adjustment of the lateral temperature profile of the substrate 118 being processed on the substrate support assembly 200 .

[0056] The heaters 214 , 212 may be controlled by a software routine that incorporates current substrate CD measurement and processing results, as well as process recipes and other parameters, to adjust the temperature profile of the substrate 118 being processed in the processing chamber 120 .

[0057] Go to Figure 4 , provides an illustration of an example architecture of a system suitable for storing and executing software routines. The software routines may include embodiments for controlling temperature in multiple zones and discretely along the surface of a substrate. This figure does not limit or is intended to limit the scope of implementing the process controller. System 400 can be a personal computer, an industrial processor, a personal digital assistant, a mobile phone, a mobile device, or any other device suitable for implementing one or more embodiments. The controller 160 can have an architecture similar to system 400. System 400 runs software routines for controlling the temperature distribution of substrates 118 being processed in one or more processing chambers 120 of the processing system 100. Additionally, or alternatively, a secondary or external controller (such as, APC 180) can have an architecture similar to system 400 and provide support (such as, data or software) to control the temperature distribution of the substrate 118.

[0058] System 400 includes a central processing unit (CPU) 402 and system memory 404, which communicate via a bus path (which may include a memory bridge 405). CPU 402 includes one or more processing cores and, in operation, serves as the primary processor of system 400, controlling and coordinating the operations of other system components. System memory 404 stores software applications 406 and data for use by CPU 402. CPU 402 runs software applications and, optionally, an operating system. Memory bridge 405, which may be, for example, a northbridge chip, is connected to an I / O (input / output) bridge 407 via a bus or other communication path (e.g., a HyperTransport link). I / O bridge 407, which may be, for example, a southbridge chip, receives user input from one or more user input devices 408 (e.g., a keyboard, mouse, joystick, digitizing tablet, touchpad, touchscreen, still or video camera, motion sensor, and / or microphone) and forwards the input to CPU 402 via memory bridge 405.

[0059] Display processor 412 is coupled to memory bridge 405 via a bus or other communication path (e.g., PCI Express, Accelerated Graphics Port, or HyperTransport link). In one embodiment, display processor 412 is a graphics subsystem that includes at least one graphics processing unit (GPU) and graphics memory. Graphics memory includes display memory (e.g., a frame buffer) that stores pixel data for each pixel of the output image. Graphics memory can be integrated into the same device as the GPU, connected to the GPU as a separate device, and / or implemented in system memory 404.

[0060] Display processor 412 periodically transmits pixels to display device 410 (e.g., a screen or a conventional CRT, plasma, OLED, SED, or LCD-based monitor or television). Additionally, display processor 412 may output pixels to a film recorder suitable for reproducing computer-generated images on photographic film. Display processor 412 may provide analog or digital signals to display device 410.

[0061] A system disk 414 is also connected to the I / O bridge 407 and may be configured to store content and applications and data, such as a database set 415, for use by the CPU 402 and the display processor 412. The system disk 414 provides non-volatile storage for applications and data and may include a fixed or removable hard drive, a flash memory device, and a CD-ROM, DVD-ROM, Blu-ray, HD-DVD, or other magnetic, optical, or solid-state storage device.

[0062] Switch 416 provides connections between I / O bridge 407 and other components, such as a network adapter 418 and various add-in cards 420 and 421. Network adapter 418 allows system 400 to communicate with other systems via an electronic communications network, and may include wired or wireless communication with a wide area network (e.g., the Internet) through a local area network 440.

[0063] Other components (not shown, including USB or other port connections, video recording devices, etc.) may also be connected to I / O bridge 407. For example, processing device 470 may operate from instructions and / or data provided by CPU 402, system memory 404, or system disk 414. Figure 4 The communication paths for the various components in the system may be implemented using any suitable protocol, such as PCI (Peripheral Component Interconnect), PCI Express (PCI-E), AGP (Accelerated Graphics Port), HyperTransport, or any other bus or point-to-point protocol, as well as connections between different devices that may use different protocols, as is known in the art.

[0064] Processing device 470 may be one or more semiconductor processing chambers, such as processing chamber 120. In one embodiment, display processor 412 incorporates circuitry optimized for performing mathematical calculations (including, for example, a math coprocessor) and may additionally constitute a graphics processing unit (GPU). In another embodiment, display processor 412 incorporates circuitry optimized for general-purpose processing. In yet another embodiment, display processor 412 may be integrated with one or more other system components, such as memory bridge 405, CPU 402, and I / O bridge 407, to form a system on a chip (SoC). In further embodiments, display processor 412 is omitted, and the functions of display processor 412 are performed by software executed by CPU 402.

[0065] Pixel data can be provided directly from CPU 402 to display processor 412. In some embodiments of the present invention, instructions and / or data representing predictive analysis are provided to a set of server computers, each of which is similar to system 400, via network adapter 418 or system disk 414. The servers can use the provided instructions for analysis to perform operations on subsets of the data. The results of these operations can be stored in digital format on computer-readable media and optionally sent back to system 400 for further analysis or display. Similarly, the data can be output to other systems for display, stored in database set 415 on system disk 414, or stored in digital format on computer-readable media.

[0066] Alternatively, the data and / or instructions provided by the CPU 402 to the display processor 412 define the desired output images, and the display processor 412 generates pixel data for one or more output images from the data and / or instructions, including characterizing and / or adjusting offsets between stereo image pairs. The data and / or instructions defining the desired output images may be stored in the system memory 404 or in graphics memory within the display processor 412.

[0067] CPU 402 and / or display processor 412 may use any math, functions, or techniques known in the art to generate one or more results from the provided data and instructions, including predictive analysis that correlates facility status information to maintenance information to predict the need for maintenance events.

[0068] It will be understood that the systems shown herein are exemplary, and variations and modifications are possible. The connection topology (including the number and configuration of bridges) can be modified as needed. For example, in some embodiments, system memory 404 is directly connected to CPU 402 without a bridge, and other devices communicate with system memory 404 via memory bridge 405 and CPU 402. In other alternative topologies, display processor 412 is connected to I / O bridge 407 or directly to CPU 402 without being connected to memory bridge 405. In still other embodiments, I / O bridge 407 and memory bridge 405 may be integrated into a single chip. The specific components shown herein are optional; for example, any number of add-in cards or peripheral devices may be supported. In some embodiments, processing device 470 may be directly connected to I / O bridge 407. In some embodiments, switch 416 is eliminated, and network adapter 418 and add-in cards 420, 421 are directly connected to I / O bridge 407.

[0069] Various embodiments of the present invention may be implemented as a program product for use with a computer system. The software routines of the program product define the functions of the embodiments (including the methods described herein) and may be included on various computer-readable storage media. Exemplary computer-readable storage media include, but are not limited to: (i) non-writable storage media (e.g., a read-only memory device within a computer, such as a CD-ROM drive readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), on which information is permanently stored; and (ii) writable storage media (e.g., a floppy disk within a disk drive, a hard disk drive, or any type of solid-state random-access semiconductor memory), on which information is stored that can be changed.

[0070] Both feedback control and feedforward control designs (i.e., software routines) can be used in the methods executed by the program code to adjust the temperature profile of the substrate. Metrology data from processing the current substrate is fed back to a controller (either a lookup table, PID, MPC, or iterative learning controller). Upstream metrology data can also be input to the feedforward controller routine. Either or both the feedback or feedforward controller routines can determine the required compensated temperature profile for processing the subsequent substrate. The compensated temperature profile is then input to a model-based temperature adjuster, the results of which generate the next run recipe parameters, including compensations determined at discrete locations across the temperature profile. This process enables process adjustment using electrostatic chuck temperature control by adjusting spatially adjustable heaters and cooling components. Model-based substrate temperature profiles can be used for multi-zone temperature control electrostatic chucks with large resistive heaters for primary adjustment, and for smaller spatially adjustable heaters with uniform or non-uniform configurations for fine-resolution control. For example, an electrostatic chuck can have a primary heater forming four zones and multiple smaller spatially adjustable heaters overlapping these zones. The substrate temperature model was developed from a physical model and calibrated using experimental data. In production, due to differences in individual electrostatic chucks and variations in RF hours, an I4 wafer was used to further calibrate the model.

[0071] A multi-zone and high-resolution temperature controlled electrostatic chuck for process-tuned temperature profile control can be heated or cooled or both. The electrostatic chuck can have a non-uniform pattern for activating spatially adjustable heaters, where each spatially adjustable heater has a unique heat output depending on the programmed power output to the spatially adjustable heater. The temperature profile can be adjusted to adjust the process to achieve critical dimension (CD) uniformity adjustment, incoming CD compensation, etch rate (ER) adjustment, etc. The temperature profile control method can be fed back from current metrology data or fed forward from previous metrology data or upstream process data. The control method is not limited to iterative learning control (which is non-model-based). Typical control adjustments (e.g., PID, LUT (look-up table)) can be used, or advanced model-based control can be used.

[0072] Given ESC-to-ESC variations and RF-hour dependencies, high-resolution temperature control achieved with a multi-zone main heater and spatially adjustable heaters within the ESC can be used to maintain consistent substrate temperature. Under changing chamber conditions, the ESC's multi-zone and high-resolution temperature control can be used to match the substrate's temperature profile to a model profile. For example, per-zone temperature control can be used to minimize process kit corrosion or compensate for edge process drift to increase the average time between chamber cleanings. The ability to influence the non-uniform shape of the temperature control profile can be designed to correct for inherent non-uniformities in chamber hardware. Furthermore, spatially adjustable heaters can be used with probes for temperature or heat flux measurements to establish a real-time temperature profile.

[0073] Figure 5 The flowchart is a method 500 for processing a substrate using a process recipe according to a first embodiment, wherein a feedforward controller routine is used to determine the process recipe. The flowchart can be implemented as a software routine on a computing device, such as that described by system 400. Spatially adjustable heaters can be independently controlled and determine the temperature distribution of the substrate being processed thereon. The controller can vary the heat generated by one spatially adjustable heater relative to another heater by controlling at least one or more of the duty cycle, voltage, current, and duration of power applied to each individual spatially adjustable heater relative to another heater. Power supplied to the spatially adjustable heaters can also be provided simultaneously across multiple heaters, as described above, or alternatively, scanned across the spatially adjustable heaters sequentially. A workpiece, such as substrate 118, can be processed on a substrate support assembly. For example, the substrate can be processed in a vacuum chamber, such as using a plasma process. The vacuum process can optionally be performed in the presence of a plasma within the process chamber. The vacuum process can be one of etching, chemical vapor deposition, physical vapor deposition, ion implantation, plasma treatment, annealing, oxide removal, abatement, or other plasma processes. It is contemplated that for other applications, the workpiece may be processed in other environments, on a temperature-controlled surface, such as under atmospheric conditions.

[0074] Method 500 begins at operation 510 by inputting one or more of process sensitivity, target process data, and upstream metrology process data into a feedforward controller routine. The feedforward controller routine is configured to take the upstream metrology data, target process data, and process sensitivity and directly output a desired wafer temperature compensation map. At operation 520, the desired wafer temperature compensation map is determined from the input data.

[0075] At operation 530, model wafer temperature adjustment parameters are created from the process recipe and the temperature compensation map. The temperature compensation map is fed back to the temperature adjuster based on the feed forward of the wafer temperature and the process recipe.

[0076] At operation 540, the model wafer temperature adjustment parameters are used to control the heating profile of the multi-zone temperature ESC. Control of each spatially adjustable heater can be performed simultaneously in the electrostatic chuck 210, allowing any selected spatially adjustable heater to quickly produce a specific temperature profile. Control of the power provided to each spatially adjustable heater can be provided by an external controller that interfaces with an adjustment heater controller disposed in the substrate support assembly via an optical connection. In addition, the adjustment heater controller can simultaneously provide power to one spatially adjustable heater while simultaneously cycling another spatially adjustable heater and cycling yet another spatially adjustable heater at different overlapping time intervals. In this way, the spatially controllable heaters can have a temperature profile across the substrate support that is adjusted to match the model wafer temperature adjustment parameters.

[0077] The model-based wafer temperature regulator then outputs the required process parameters to form a new recipe.In operation 550, the recipe is run and the substrate is processed on the multi-zone temperature ESC.

[0078] Figure 6 A second embodiment of a method 600 for processing a substrate using a spatially adjustable heater in conjunction with a feedback controller routine is provided. The process begins at operation 610, where process sensitivity, target process data, and k-th run metrology process data are input into an iterative learning controller. At the k-th iteration (where k=1, 2, ...), the feedback controller routine is configured to apply the difference metrology data (i.e., k-th run metrology data, target process data) to achieve a desired substrate temperature profile based on the process sensitivity to temperature and substrate temperature data. The feedback controller routine can be an iterative learning controller or other type of controller, such as a LUT, PID, MPC, or other suitable controller.

[0079] At operation 620, a desired substrate temperature compensation map is determined from the input data. The desired substrate temperature compensation map becomes an input to the controller, which adjusts the recipe parameters, such as instructing a PWM controller to modify the output from the spatially adjustable heater so that the next substrate is run with a temperature profile as close as possible to the desired substrate temperature profile. Iterations are performed until the desired process performance is achieved. This process may include multiple iterations using multiple substrates.

[0080] Model substrate temperature adjustment parameters may be generated from the process recipe and the temperature compensation map at operation 630. Key recipe outputs (such as temperature) may be adjusted each time new desired process targets and process sensitivity changes occur.

[0081] At operation 640, the heating profile of the multi-zone and spatially adjustable temperature electrostatic chuck may be controlled using model substrate temperature adjustment parameters. For example, the model substrate temperature adjustment parameters may include a unique incremental increase in power to a number of individual spatially adjustable heaters while simultaneously decreasing power to other individual spatially adjustable heaters to achieve a desired temperature profile.

[0082] At operation 650, a process is run on the K+1th substrate using the Kth iteration recipe. That is, after measuring the substrate, the process recipe is modified. This process recipe is then used to process the next substrate. In some embodiments, the process recipe can be determined based on measurements of a previous set of substrates. For example, substrates can be placed in a FOUP and moved to a separate metrology device. The recipe can be determined based on the last substrate processed in the FOUP. Alternatively, the controller can monitor metrology trends for substrates in the FOUP and adjust the current process recipe based on these trends.

[0083] At operation 660 , metrology data for the K+1th substrate is determined. The metrology data may be stored in a database, such as at an APC, for future use. At operation 670 , the K+1th run metrology process data is provided to an iterative learning controller. The controller may adjust the current K+2th process recipe based on the metrology process data.

[0084] Figure 7 Flowchart of a method 700 for processing a substrate using a feedback and feedforward controller routine to determine a process recipe for a spatially adjustable heater. The process recipe for the current substrate may be modified based on both the feedback current process data and the feedforward upstream metrology data.

[0085] Method 700 begins at operation 710, where process sensitivity, target process data, and k-th run metrology process data are input into an iterative learning controller, i.e., a feedback controller routine. At operation 715, process sensitivity, target process data, and upstream metrology data are input into a feedforward controller routine.

[0086] At operation 720, the required substrate temperature compensation map is created from the input data from the feedforward controller routine and the iterative learning controller routine. Thus, both current process data and upstream metrology data are used.

[0087] In operation 730, model substrate temperature adjustment parameters are created from the process recipe and the temperature compensation map, in addition to the desired temperature compensation map. The model substrate adjustment parameters are used to determine the required heat output of each spatially adjustable heater to achieve the desired temperature distribution of the substrate.

[0088] At operation 740, the heating profile of the multi-zone temperature electrostatic chuck is controlled using the model wafer temperature adjustment parameters. The PWM controller adjusts the power to each individual spatially adjustable heater to achieve the desired temperature profile. While the power to one spatially adjustable heater is being adjusted, the other spatially adjustable heaters may be disconnected or maintained at a given output. Alternatively, the power to multiple (such as, two, more, or all) spatially adjustable heaters may be adjusted simultaneously. There may be 140 or more spatially adjustable heaters, each of which is individually controlled to obtain a customizable heat output. The controller may instruct the PWM controller to provide 20% power to a spatially adjustable heater, such as a spatially adjustable heater x , to achieve a temperature increase of approximately 1 degree Celsius in the first position adjacent to the heater. The controller may simultaneously instruct the PWM to provide 80% power to a second spatially adjustable heater, such as a spatially adjustable heater y , to achieve a temperature increase of approximately 4 degrees Celsius in a second location adjacent to the heater. In this way, up to 100% of the spatially adjustable heaters can be individually and simultaneously controlled to create a unique temperature profile.

[0089] At operation 750, a process using the Kth iteration recipe is run on the K+1th substrate. Thus, for each subsequent substrate, the recipe may be adjusted to uniquely modify the temperature profile to achieve the desired result.

[0090] At operation 760 , metrology data for the K+1th substrate is determined. At operation 770 , the K+1th run metrology process data is provided to an iterative learning controller routine for use in determining a substrate temperature compensation map for the K+2th substrate.

[0091] Advantageously, process adjustments can control CD uniformity, incoming CD compensation, and etch rate. Spatially adjustable heaters maintain consistent substrate temperature across a variety of chamber environments and across different ESCs. Spatially adjustable heaters can be used to facilitate edge region temperature control, which is configured to minimize corrosion of process kits or compensate for edge process drift, and increase the average time between cleans. Spatially adjustable heaters can have non-uniform shapes to correct for inherent non-uniformities in the processing chamber. Additionally, spatially adjustable heaters can be used with probes that measure temperature or heat flux. Thus, spatially adjustable heaters adjust process results to compensate for variations over time.

[0092] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be envisaged without departing from the basic scope thereof, and the scope of the invention is determined by the appended claims.

Claims

1. A method for processing a substrate on a substrate support assembly, the method comprising the steps of: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly in forming a second temperature profile; and Processing a second substrate with the second temperature profile, wherein determining the offset profile comprises the steps of: inputting data into a feedforward controller routine, the data comprising one or more of process sensitivity, target process data, and upstream metrology process data; determining a desired substrate temperature compensation map from the input data; and The offset profile is created from a process recipe and the substrate temperature compensation map.

2. A method for processing a substrate on a substrate support assembly, the method comprising the steps of: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly in forming a second temperature profile; and processing a second substrate with the second temperature profile, Determining the offset distribution comprises the following steps: providing first run metrology process data to an iterative learning controller routine; inputting data into the iterative learning controller routine, the data comprising at least one or more of process sensitivity, target process data, and the first run metrology process data; determining a desired wafer temperature compensation map from the input data; and The offset profile is created from the process recipe and the temperature compensation map.

3. A method for processing a substrate on a substrate support assembly, the method comprising the steps of: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly in forming a second temperature profile; and processing a second substrate with the second temperature profile, Determining the offset distribution comprises the following steps: Provide the K-th run metrology process data to the iterative learning controller routine; inputting process data into the iterative learning controller routine, the process data comprising at least one or more of process sensitivity, target process data, and Kth run metrology process data; determining a desired wafer temperature compensation map from the input data; Inputting process sensitivity, target process data, and upstream metrology data into a feedforward controller routine; and The offset profile is created from the process recipe and the temperature compensation map.

4. The method of claim 1 , wherein forming the second temperature profile of the substrate support assembly further comprises the steps of: While processing the first substrate, more or less power is applied to at least some of the spatially adjustable heaters at the plurality of discrete locations relative to power applied to the spatially adjustable heaters at the plurality of discrete locations that are not distributed across a workpiece support surface of the substrate support assembly.

5. The method of claim 1, wherein the spatially adjustable heaters are powered simultaneously, and wherein at least two of the spatially adjustable heaters have different percentage power outputs.

6. The method of claim 1, further comprising the steps of: At a position corresponding to the spatially adjustable heater having a power output of 100%, the workpiece supporting surface of the substrate support assembly is increased by 5 degrees Celsius.

7. A computer-readable storage medium storing a program that, when executed by a processor, performs operations for processing a substrate on a substrate support assembly, the operations comprising: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly during formation of a second temperature profile; processing a second substrate with the second temperature profile, wherein determining the offset profile comprises: inputting data into a feedforward controller routine, the data comprising one or more of process sensitivity, target process data, and upstream metrology process data; determining a required substrate temperature compensation map from the input data; and The offset profile is created from a process recipe and the substrate temperature compensation map.

8. A computer-readable storage medium storing a program that, when executed by a processor, performs operations for processing a substrate on a substrate support assembly, the operations comprising: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly during formation of a second temperature profile; processing a second substrate with the second temperature profile, Wherein determining the offset distribution comprises: providing first run metrology process data to an iterative learning controller routine; inputting data into the iterative learning controller routine, the data comprising at least one or more of process sensitivity, target process data, and the first run metrology process data; determining a required wafer temperature compensation map from the input data; and The offset profile is created from the process recipe and the temperature compensation map.

9. A computer-readable storage medium storing a program that, when executed by a processor, performs operations for processing a substrate on a substrate support assembly, the operations comprising: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly during formation of a second temperature profile; processing a second substrate with the second temperature profile, Wherein determining the offset distribution comprises: Provide the K-th run metrology process data to the iterative learning controller routine; inputting process data into the iterative learning controller routine, the process data comprising at least one or more of process sensitivity, target process data, and Kth run metrology process data; determining a desired wafer temperature compensation map from the input data; inputting process sensitivity, target process data, and upstream metrology data into a feedforward controller routine; and The offset profile is created from the process recipe and the temperature compensation map.

10. The computer-readable storage medium storing a program according to claim 7, wherein forming the second temperature distribution of the substrate support assembly further comprises: While processing the first substrate, more or less power is applied to at least some of the spatially adjustable heaters at the plurality of discrete locations relative to power applied to the spatially adjustable heaters at the plurality of discrete locations that are not distributed across a workpiece support surface of the substrate support assembly.

11. The computer-readable storage medium storing a program of claim 7, wherein the spatially adjustable heaters are powered simultaneously, and wherein at least two of the spatially adjustable heaters have different percentage power outputs.

12. The computer-readable storage medium storing a program according to claim 7, further comprising: At a position corresponding to the spatially adjustable heater having a power output of 100%, the workpiece supporting surface of the substrate support assembly is increased by 5 degrees Celsius.

13. A system comprising: processor; and a memory, wherein the memory includes an application program configured to perform operations for processing a substrate on a substrate support assembly, the operations comprising: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly in forming a second temperature profile; and processing a second substrate with the second temperature profile, wherein determining the offset profile comprises: inputting data into a feedforward controller routine, the data comprising one or more of process sensitivity, target process data, and upstream metrology process data; determining a required substrate temperature compensation map from the input data; and The offset profile is created from a process recipe and the substrate temperature compensation map.

14. A system comprising: processor; and a memory, wherein the memory includes an application program configured to perform operations for processing a substrate on a substrate support assembly, the operations comprising: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly in forming a second temperature profile; and processing a second substrate with the second temperature profile, Wherein determining the offset distribution comprises: providing first run metrology process data to an iterative learning controller routine; inputting data into the iterative learning controller routine, the data comprising at least one or more of process sensitivity, target process data, and the first run metrology process data; determining a required wafer temperature compensation map from the input data; and The offset profile is created from the process recipe and the temperature compensation map.

15. A system comprising: processor; and a memory, wherein the memory includes an application program configured to perform operations for processing a substrate on a substrate support assembly, the operations comprising: processing a first substrate using a first temperature profile on a substrate support assembly having a main heater and a spatially adjustable heater; determining an offset distribution from a result of processing the first substrate; controlling the spatially adjustable heater in response to the offset profile to effect discrete lateral and azimuthal adjustments of the local temperature of the substrate support assembly in forming a second temperature profile; and processing a second substrate with the second temperature profile, Wherein determining the offset distribution comprises: Provide the K-th run metrology process data to the iterative learning controller routine; inputting process data into the iterative learning controller routine, the process data comprising at least one or more of process sensitivity, target process data, and Kth run metrology process data; determining a desired wafer temperature compensation map from the input data; inputting process sensitivity, target process data, and upstream metrology data into a feedforward controller routine; and The offset profile is created from the process recipe and the temperature compensation map.

16. The system of claim 13, further comprising: At a position corresponding to the spatially adjustable heater having a power output of 100%, the workpiece supporting surface of the substrate support assembly is increased by 5 degrees Celsius.

17. The system of claim 13, wherein the spatially adjustable heaters are powered simultaneously, and wherein at least two of the spatially adjustable heaters have different percentage power outputs.

Images