Multi-layer substrate

Abstract

Provided is a multilayer substrate in which semiconductor substrates each having a through electrode are laminated, the multilayer substrate having excellent conduction characteristics and being capable of being manufactured at low cost. In a plan view of the multilayer substrate, conductive particles are selectively present at positions opposed to the through electrodes. The multilayer substrate has a connection structure in which the opposed through electrodes are connected by the conductive particles and the semiconductor substrates each having the through electrode are bonded to each other by an insulating adhesive.

Description

[0001] This application is a divisional application of the following invention patent application:

[0002] Title of the Invention: Multilayer Substrate; Application Date: January 13, 2016; Application No.: 201680004447.3. Technical Field

[0003] The present invention relates to a multilayer substrate. Background Art

[0004] In the field of high-density mounting of ICs, a multilayer substrate is used in which semiconductor substrates on which electronic components such as ICs are mounted are stacked.

[0005] As a method for manufacturing a multilayer substrate, there are methods in which through electrodes having bumps are formed on each semiconductor substrate, and the through electrodes of the opposing semiconductor substrates are connected to each other by reflow of the bumps (Patent Document 1); or a method in which an anisotropic conductive film in which conductive particles are dispersed in an insulating adhesive layer is sandwiched between opposing semiconductor substrates, and the through electrodes are connected to each other by heating and pressing (Patent Document 2).

[0006] Prior Art Documents

[0007] Patent Documents

[0008] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2010-272737

[0009] Patent Document 2: Japanese Unexamined Patent Application Publication No. 8-330736. Summary of the Invention

[0010] Problems to be Solved by the Invention

[0011] However, in the method of forming bumps on the through electrodes of each semiconductor substrate, connecting the through electrodes of the opposing semiconductor substrates by reflow of solder, and stacking the semiconductor substrates, the manufacturing process is complicated.

[0012] In the method of using an anisotropic conductive film to connect opposing through electrodes and stack semiconductor substrates, although the manufacturing process of the multilayer substrate can be simplified, since the conductive particles of the anisotropic conductive film are randomly dispersed in the insulating adhesive layer, there are cases where the conductive particles of the anisotropic conductive film are not sufficiently sandwiched between the through electrodes of the opposing semiconductor substrates, resulting in a problem of deviation in conduction characteristics. On the other hand, there are a large number of conductive particles between the opposing semiconductor substrates that do not contribute to the connection of the through electrodes, and thus there is also a problem that the unnecessary conductive particles cost money.

[0013] Therefore, the subject is to laminate semiconductor substrates using an anisotropic conductive film and provide a multilayer substrate with excellent conduction characteristics at low cost with a simple manufacturing process.

[0014] Solution for Solving the Subject

[0015] The present inventors found that when laminating semiconductor substrates using an anisotropic conductive film to manufacture a multilayer substrate, if conductive particles in the insulating adhesive of the anisotropic conductive film are selectively arranged corresponding to the arrangement of the through electrodes of the semiconductor substrates, the through electrodes of the opposing semiconductor substrates can be reliably connected by the conductive particles. In addition, the number of conductive particles that do not contribute to the connection is reduced, and the manufacturing cost of the multilayer substrate is lowered, leading to the present invention.

[0016] That is, the present invention provides a multilayer substrate in which semiconductor substrates having through electrodes are laminated, wherein,

[0017] in a plan view of the multilayer substrate, conductive particles selectively exist at positions opposing the through electrodes,

[0018] and has a connection structure in which opposing through electrodes are connected by conductive particles and semiconductor substrates having the through electrodes are bonded to each other by an insulating adhesive.

[0019] In particular, as such a multilayer substrate, a multilayer substrate in which a first semiconductor substrate having through electrodes and a second semiconductor substrate having through electrodes are laminated is provided, wherein,

[0020] it has such a connection structure:

[0021] the through electrode of the first semiconductor substrate opposes the through electrode of the second semiconductor substrate and is connected by conductive particles selectively arranged therebetween,

[0022] the first semiconductor substrate and the second semiconductor substrate are bonded by an insulating adhesive.

[0023] In addition, the present invention provides a method for manufacturing a multilayer substrate, in which through electrodes formed on semiconductor substrates are opposed to each other and joined. Among them, an anisotropic conductive film in which conductive particles are selectively arranged at positions corresponding to the positions opposing the through electrodes in a plan view of the multilayer substrate is sandwiched between semiconductor substrates having through electrodes, and the anisotropic conductive film is heated and pressed to anisotropically conductively connect these semiconductor substrates.

[0024] In particular, as a method for manufacturing such a multi-layer substrate, a method is provided in which a first semiconductor substrate having a through electrode and a second semiconductor substrate having a through electrode are bonded with their through electrodes facing each other. An anisotropic conductive film in which conductive particles are selectively arranged in an insulating adhesive layer corresponding to the arrangement of the through electrodes is sandwiched between the first semiconductor substrate and the second semiconductor substrate, and the anisotropic conductive film is heated and pressed, thereby anisotropically conducting the connection between the first semiconductor substrate and the second semiconductor substrate.

[0025] Furthermore, as an anisotropic conductive film used in the method for manufacturing the multi-layer substrate described above, an anisotropic conductive film including an insulating adhesive layer and conductive particles arranged in the insulating adhesive layer is provided, wherein the conductive particles are selectively arranged in the insulating adhesive layer corresponding to the arrangement of the through electrodes connected by the anisotropic conductive film.

[0026] In addition, as an anisotropic conductive film useful for the method for manufacturing the multi-layer substrate described above, an anisotropic conductive film is provided, which includes an insulating adhesive layer and conductive particles arranged in the insulating adhesive layer, and in which two or more conductive particle units in which the conductive particles are close to each other are formed.

[0027] In the conductive particle unit, the distance between any conductive particle and the conductive particle closest to the conductive particle is 0.2 to 0.5 times the diameter of the conductive particle.

[0028] Advantages of the Invention

[0029] According to the multi-layer substrate of the present invention, since the through electrodes of the semiconductor substrates are reliably connected to each other by the conductive particles, the conduction characteristics are stable, and the conductive particles that do not contribute to the connection are reduced between the semiconductor substrates, so that the manufacturing cost of the multi-layer substrate can be suppressed. In addition, for the same reason, it is also effective in reducing the instrument operation man-hours.

[0030] The multi-layer substrate of the present invention can be manufactured by a simple process by using an anisotropic conductive film in which conductive particles are selectively arranged at specific positions.

[0031] Especially when manufacturing a multi-layer substrate in which three or more semiconductor substrates are stacked by using the method of the present invention, if a common anisotropic conductive film is used between the stacked semiconductor substrates, the total manufacturing cost of the multi-layer substrate can be significantly reduced. Therefore, the multi-layer substrate of the present invention can be provided at a low price. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Figure 1 is a cross-sectional view of a multi-layer substrate 1A according to an embodiment of the present invention. ​​

[0033] Figure 2 Figure 2 is a cross-sectional view of a multilayer substrate 1B according to an embodiment of the present invention.

[0034] Figure 3A Figure 3A is an explanatory view of the manufacturing process of the multilayer substrate 1B.

[0035] Figure 3B Figure 3B is an explanatory view of the manufacturing process of the multilayer substrate 1B.

[0036] Figure 3C Figure 3C is an explanatory view of the manufacturing process of the multilayer substrate 1B.

[0037] Figure 3D Figure 3D is an explanatory view of the manufacturing process of the multilayer substrate 1B.

[0038] Figure 4 Figure 4 is a cross-sectional view of a multilayer substrate 1C.

[0039] Figure 5A Figure 5A is a cross-sectional view of a multilayer substrate 1D.

[0040] Figure 5B Figure 5B is an arrangement diagram (top view) of conductive particles in an anisotropic conductive film 10D used in the manufacture of the multilayer substrate 1D.

[0041] Figure 6 Figure 6 is an arrangement diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multilayer substrate of Example 1.

[0042] Figure 7 Figure 7 is an arrangement diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multilayer substrate of Example 3.

[0043] Figure 8A Figure 8A is an arrangement diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multilayer substrate of Example 4.

[0044] Figure 8B Figure 8B is an arrangement diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multilayer substrate of Example 5.

[0045] Figure 8C Figure 8C ​​​​​​​​​​​​​​​​​​​​​​​​​​It is a layout diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multi-layer substrate in Example 6.

[0046] Figure 8D Figure 8D It is a layout diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multi-layer substrate in Example 7.

[0047] Figure 8E Figure 8E It is a layout diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multi-layer substrate in Example 8.

[0048] Figure 8F Figure 8F It is a layout diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multi-layer substrate in Example 9.

[0049] Figure 8G Figure 8G It is a layout diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multi-layer substrate in Example 10.

[0050] Figure 8H Figure 8H It is a layout diagram of electrodes and conductive particles on the surface of a semiconductor substrate used in the manufacture of the multi-layer substrate in Example 11. Detailed Description of the Invention

[0051] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In addition, in each figure, the same reference numerals denote the same or equivalent structural elements.

[0052] <Multi-layer Substrate Connection Structure>

[0053] Figure 1 It is a cross-sectional view of a multi-layer substrate 1A according to an embodiment of the present invention.

[0054] In this multi-layer substrate 1A, three semiconductor substrates 3A, 3B, and 3C are laminated on a wiring substrate 2. Each of the semiconductor substrates 3A, 3B, and 3C is a semiconductor wafer on which semiconductor components such as ICs are formed. Through electrodes 4X are formed on the wiring substrate 2, and through electrodes 4A, 4B, and 4C are formed on each of the semiconductor substrates 3A, 3B, and 3C. Moreover, electrode pads are respectively formed on the part where the through electrode 4X is exposed on the surface of the wiring substrate 2 or the part where the through electrodes 4A, 4B, and 4C are exposed on the surface of the semiconductor substrate. In addition, in the present invention, semiconductor chips can also be used as the semiconductor substrates 3A, 3B, and 3C. Further, in the present invention, there is no particular limitation on the number of semiconductor substrates laminated to form the multi-layer substrate.

[0055] ​​​​​​​​​​In the multilayer substrate 1A, there is a connection structure in which the through electrode 4X of the wiring substrate 2 and the through electrode 4A of the first semiconductor substrate 3A face each other, and these through electrodes 4X and 4A are electrically connected by conductive particles 11 selectively disposed between these through electrodes 4X and 4A. Further, there is a connection structure in which the through electrode 4A of the first semiconductor substrate 3A and the through electrode 4B of the second semiconductor substrate 3B face each other, and these through electrodes 4A and 4B are electrically connected by conductive particles 11 selectively disposed between these through electrodes 4A and 4B.

[0056] In this connection structure, the selective disposition of the conductive particles 11 at the opposed portions of the through electrodes 4A and 4B means that the conductive particles 11 mainly exist on the opposed surfaces of the through electrodes 4A and 4B or in their vicinity, and one or more conductive particles 11 can be captured on the opposed surfaces of the through electrodes 4A and 4B. In terms of cost, the number of captured particles on the opposed surfaces of the through electrodes 4A and 4B is preferably 1 to several. When a plurality of conductive particles are disposed on the opposed surfaces of the through electrodes 4A and 4B using an anisotropic conductive film, the alignment accuracy between the semiconductor substrates 3A and 3B and the conductive particles 11 can be relaxed. On the other hand, from the viewpoint of conduction stability, it is preferably that the number of captured particles on the opposed surfaces of the through electrodes 4A and 4B is 10 or more. When a conductive particle is disposed on the opposed surface of the through electrodes 4A and 4B using an anisotropic conductive film, in order to capture the conductive particle more stably, conductive particles equal to or several times the desired number of conductive particles to be captured on the opposed surfaces of the through electrodes 4A and 4B may be disposed at the corresponding portions of the anisotropic conductive film. By such treatment, the alignment accuracy can be relaxed, and an effect of reducing the time required for manufacturing the semiconductor substrate can also be expected.

[0057] The opposed surfaces of the first semiconductor substrate 3A and the second semiconductor substrate 3B are bonded to each other by an insulating adhesive 12. The insulating adhesive 12 is formed by the insulating adhesive layer of the anisotropic conductive film 10A described later.

[0058] The through electrode 4B of the second semiconductor substrate 3B connected to the through electrode 4A of the first semiconductor substrate 3A also faces the through electrode 4C of the third semiconductor substrate 3C on the side of the third semiconductor substrate 3C, and the through electrode 4B of the second semiconductor substrate 3B and the through electrode 4C of the third semiconductor substrate 3C are electrically connected by conductive particles 11 selectively disposed therebetween. The opposed surfaces of the second semiconductor substrate 3B and the third semiconductor substrate 3C are also bonded to each other by the insulating adhesive 12.

[0059] Thus, the multilayer substrate 1A has a connection structure in which the through electrodes 4X of the wiring substrate 2 and the through electrodes 4A, 4B, and 4C of the three-layer semiconductor substrate are linearly connected along the stacking direction of the multilayer substrate. According to this linearly connected structure, the path of electrical transmission is shortened, so the transmission speed can be increased.

[0060] <Conductive particles in the multilayer substrate>

[0061] The multilayer substrate 1A is manufactured by connecting the layers constituting the multilayer substrate with the anisotropic conductive film having a specific configuration of conductive particles as described later. The particle size of the conductive particles 11 in the anisotropic conductive film is usually smaller than the diameter of the opposing surfaces of the through electrodes 4A and 4B. However, in the multilayer substrate 1A, the conductive particles 11 may be crushed from the original shape and the particle size may become the same as the diameter of the opposing surfaces of the through electrodes 4A and 4B. This means that the crushed conductive particles 11 can be collected within the opposing surfaces of the through electrodes 4A and 4B, or at least a part of the outer peripheral portion may protrude from the opposing surfaces of the through electrodes 4A and 4B. In addition, depending on the constituent materials of the conductive particles 11, there are cases where the conductive particles 11 maintain their particle shape in the multilayer substrate 1A.

[0062] Between the first semiconductor substrate 3A and the second semiconductor substrate 3B of the multilayer substrate 1A, the conductive particles 11 are selectively present at the opposing portions of the through electrodes 4A and 4B as described above, and most of the conductive particles 11 are captured by the opposing through electrodes 4A and 4B. Therefore, even if there are conductive particles 11 that are not captured by the opposing through electrodes 4A and 4B, it is preferable that the number of such conductive particles 11 is 5% or less of the total number of conductive particles present between the first semiconductor substrate 3A and the second semiconductor substrate 3B, and more preferably 0.5% or less. It is particularly preferable that substantially all of the conductive particles 11 are captured by the through electrodes 4A and 4B. The same applies to other semiconductor substrates constituting the multilayer substrate 1A. By reducing the conductive particles 11 that do not contribute to the connection of the through electrodes 4A, 4B, and 4C in this way, it becomes easier to perform simulation analysis of the performance, and the man-hours for improvement can be reduced.

[0063] <Wiring substrate>

[0064] Here, as the wiring substrate 2 constituting the multilayer substrate 1A, an epoxy glass substrate such as FR4 can be used. As the wiring substrate 2, a silicon wafer for an IC chip or IC formation can also be used. The wiring substrate 2 can be appropriately selected according to the use of the multilayer substrate 1A and the like.

[0065] At the electrode portion of the wiring substrate 2, solder balls 5 are provided as needed.

[0066] <Semiconductor substrate>

[0067] As the semiconductor substrates 3A, 3B, and 3C, there are no particular restrictions as long as there are through electrodes 4A, 4B, and 4C. For example, general semiconductor materials such as silicon can be used.

[0068] The specifications of the through electrodes 4A, 4B, and 4C can be appropriately set. For example, the through electrodes 4A, 4B, and 4C can have electrode pads or bumps. However, in the case of stacking semiconductor substrates 3A, 3B, and 3C, the substrates are arranged such that the through electrodes 4A, 4B, and 4C of each semiconductor substrate 3A, 3B, and 3C are linearly connected across at least two semiconductor substrates in the thickness direction of the multilayer substrate 1A, and preferably are linearly connected across the front and back surfaces of the multilayer substrate 1A.

[0069] <Components to be mounted>

[0070] In the multilayer substrate of the present invention, various components can be mounted as needed.

[0071] For example Figure 2 As shown, the multilayer substrate 1B has a connection structure in which the through electrodes 4X, 4A, 4B, and 4C of each layer are linearly connected, and a heat sink 6 for heat dissipation connected to the through electrode 4C is provided on the outermost layer. Therefore, the multilayer substrate 1B can efficiently dissipate heat released from electronic components such as ICs formed on the wiring substrate 2 or semiconductor substrates 3A, 3B, and 3C through the heat sink 6.

[0072] <Method for manufacturing multilayer substrate>

[0073] As a method for manufacturing the multilayer substrate of the present invention, for example, in the case of the multilayer substrate 1B Figure 2 first, as Figure 3A shown, an anisotropic conductive film 10A of the present invention in which conductive particles 11 are selectively arranged corresponding to the configuration of the through electrodes 4X and 4A to be connected is sandwiched between a wiring substrate 2 having a through electrode 4X and a semiconductor substrate 3A having a through electrode 4A. By heating and pressing the anisotropic conductive film 10A, the wiring substrate 2 and the first semiconductor substrate 3A are anisotropically conductively connected to obtain Figure 3B the two-layer connection structure shown. More specifically, the wiring substrate 2 and the anisotropic conductive film 10A are overlapped in alignment such that the through electrodes 4X to be connected match the configuration of the conductive particles 11, and then the first semiconductor substrate 3A is also overlapped in alignment, and they are anisotropically conductively connected by heating and pressing.

[0074] Similarly, as Figure 3CAs shown, the first semiconductor substrate 3A and the anisotropic conductive film 10B are aligned and overlapped, and the second semiconductor substrate 3B is aligned and overlapped thereon, and anisotropically conductively connected by heating and pressing to obtain Figure 3D the three-layer connection structure shown. Further, similarly, the anisotropic conductive film and the third semiconductor substrate 3C are aligned and overlapped on the second semiconductor substrate 3B, and heated and pressed. This alignment can also be performed by observing the conductive particles corresponding to the through electrodes of the anisotropic conductive film (when the conductive particle units are formed as described later, the conductive particles constituting the conductive particle units) and the through electrodes using a CCD or the like, and overlapping them.

[0075] Then, a heat sink 6 is connected to the third semiconductor substrate 3C through a heat conducting tape or the like, solder balls 5 are formed on the electrode pads of the wiring substrate 2, and a multilayer substrate 1B is obtained by a common method. Alternatively, conductive particles may be provided instead of the solder balls 5.

[0076] In addition, as a method for aligning the wiring substrate 2 or the semiconductor substrates 3A, 3B, 3C with the anisotropic conductive films 10A, 10B, alignment marks may be respectively provided on the wiring substrate 2, the semiconductor substrates 3A, 3B, 3C, and the anisotropic conductive films 10A, 10B, and the alignment may be performed by aligning these alignment marks.

[0077] That is, conventionally, in the case of manufacturing a multilayer substrate by laminating semiconductor substrates, as an example, alignment marks having a size of several tens of μm to several hundreds of μm are formed on the semiconductor substrates, and the semiconductor substrates are aligned with each other using a CCD or a laser. On the other hand, since the conductive particles are monodispersed or arranged in a lattice pattern in the anisotropic conductive film, the anisotropic conductive film does not have alignment marks. In contrast, in the anisotropic conductive film used in the present invention, since the conductive particles 11 are selectively arranged in the insulating adhesive layer 12 corresponding to the arrangement of the through electrodes to be connected, the arrangement of the conductive particles 11 can be used as a substitute for the alignment marks. It is preferable to provide some alignment marks on the anisotropic conductive film including the arrangement of such conductive particles.

[0078] <Anisotropic Conductive Film>

[0079] Regarding the anisotropic conductive film of the present invention used in the manufacturing method of the multi-layer substrate of the present invention, the conductive particles 11 are selectively arranged in the insulating adhesive layer 12 corresponding to the configuration of the through electrodes to be connected, and preferably alignment marks are formed by the conductive particles 11. As the alignment marks, it is preferable to form them by the arrangement of the conductive particles. Thereby, the alignment marks can be clearly detected, and there is no need to add a new process for making the anisotropic conductive film carry alignment marks. On the other hand, the alignment marks can also be formed by locally curing the insulating adhesive layer 12 by laser irradiation or the like. Thereby, it becomes easy to change the position with the attached alignment marks.

[0080] As a manufacturing method of such an anisotropic conductive film, a mold having protrusions corresponding to the arrangement of the conductive particles 11 is produced by a known processing method such as machining, laser processing, and photolithography of a metal plate, a curable resin is filled into the mold and cured to manufacture a resin mold with reversed concavities and convexities, the conductive particles are introduced into the concave portions of the resin mold, a composition for forming an insulating adhesive layer is filled thereon and cured, and then it can be taken out from the mold.

[0081] In addition, in order to make the conductive particles 11 in a specific arrangement in the insulating adhesive layer 12, a member having through holes formed in a predetermined arrangement may be provided on the composition layer for forming the insulating adhesive layer, and the conductive particles 11 may be supplied from above and passed through the through holes.

[0082] <Conductive particles for forming the anisotropic conductive film>

[0083] As the conductive particles for forming the anisotropic conductive films 10A and 10B, they can be appropriately selected from known materials for anisotropic conductive films. Examples include metal particles such as solder, nickel, cobalt, silver, copper, gold, and palladium, and metal-coated resin particles. The metal coating of the metal-coated resin particles can be formed by a known metal film forming method such as electroless plating or sputtering. The metal coating is not particularly limited as long as it is formed on the surface of the core resin material. The core resin material can be formed only of resin or can contain conductive fine particles to improve conduction reliability.

[0084] In terms of conduction reliability and cost, as the conductive particles, it is preferable to use solder particles among the above particles. On the other hand, when a reflow process or the like is not required in the subsequent process, it is preferable to use metal-coated resin particles. This is because in the present invention, the connection between the through electrodes or the bonding between the semiconductor substrates is performed by heating and pressing the anisotropic conductive film in which the conductive particles are arranged in the insulating adhesive layer. Therefore, if metal-coated resin particles are used as the conductive particles, the heating and pressing temperature can be lowered, and the range of material selection for the insulating adhesive can be expanded.

[0085] In addition, as the conductive particles, two or more types of particles can also be used together.

[0086] From the viewpoint of the stability of the electrode indirect bonding, the particle diameter of the conductive particles 11 is preferably 2 to 40 μm.

[0087] <An insulating adhesive layer forming an anisotropic conductive film>

[0088] As the insulating adhesive layer 12, an insulating resin layer used in a known anisotropic conductive film can be appropriately employed. For example, a photo-radical polymerization type resin layer containing an acrylate compound and a photo-radical polymerization initiator; a thermal-radical polymerization type resin layer containing an acrylate compound and a thermal-radical polymerization initiator; a thermal-cationic polymerization type resin layer containing an epoxy compound and a thermal-cationic polymerization initiator; a thermal-anionic polymerization type resin layer containing an epoxy compound and a thermal-anionic polymerization initiator, etc. In addition, these resin layers can be resins polymerized separately as needed. In addition, the insulating adhesive layer 12 can also be formed of a plurality of resin layers.

[0089] However, depending on the use of cutting out a chip or the like from the multilayer substrate 1A, when the multilayer substrate 1A is cut after manufacturing the multilayer substrate 1A, it is preferable that the insulating adhesive layer 12 has flexibility and adhesiveness that can withstand cutting.

[0090] In addition, as needed, insulating fillers such as silica fine particles, alumina, and aluminum hydroxide can also be added to the insulating adhesive layer 12. The blending amount of the insulating filler is preferably 3 to 40 parts by mass with respect to 100 parts by mass of the resin forming the insulating adhesive layer. Thereby, even when the insulating adhesive layer 12 melts during anisotropic conductive connection, it is possible to suppress the useless movement of the conductive particles 11 due to the melted resin.

[0091] The size of the insulating filler is preferably such that it does not hinder anisotropic conductive connection.

[0092] In the anisotropic conductive films 10A and 10B manufactured in this way, there are almost no conductive particles existing outside the predetermined positions. However, even if there are conductive particles existing at the predetermined positions, there may be conductive particles that are not captured by the opposing through electrodes 4A and 4B. Therefore, after using the anisotropic conductive films 10A and 10B for the connection of the semiconductor substrates 3A and 3B, the number of the conductive particles 11 that are not captured by the opposing through electrodes 4A and 4B between the opposing semiconductor substrates 3A and 3B is preferably 5% or less of the total number of the conductive particles 11 existing between the opposing semiconductor substrates 3A and 3B.

[0093] <Deformation mode 1>

[0094] The multilayer substrate of the present invention can take various forms.

[0095] For example, Figure 4 as for the multi-layer substrate 1C shown, by using, in the Figure 1 multi-layer substrate 1A shown, a common anisotropic conductive film as the anisotropic conductive film that connects the through electrode 4X of the wiring substrate 2 and the through electrode 4A of the first semiconductor substrate 3A, the anisotropic conductive film that connects the through electrode 4A of the first semiconductor substrate 3A and the through electrode 4B of the second semiconductor substrate 3B, and the anisotropic conductive film that connects the through electrode 4B of the second semiconductor substrate 3B and the through electrode 4C of the third semiconductor substrate 3C. That is, as the anisotropic conductive film, a structure is used in which, in a plan view of the multi-layer substrate 1C to be manufactured, the conductive particles 11 are selectively arranged at positions where the through electrodes of the wiring substrate 2 or the semiconductor substrates 3A, 3B, 3C face each other in the insulating adhesive layer 12. Thus, in a plan view of the multi-layer substrate 1C, the conductive particles 11, 11x exist at positions where the through electrodes 4X, 4A, 4B, 4C face each other. In other words, there are not necessarily only conductive particles selectively arranged for that through electrode between the opposing through electrodes. For example, between the semiconductor substrate 3A and the semiconductor substrate 3B, in addition to the conductive particles 11 being selectively arranged at positions where the through electrodes 4A, 4B formed in these semiconductor substrates 3A and 3B face each other, there are also conductive particles 11x that do not contribute to the connection between the through electrode 4A of the semiconductor substrate 3A and the through electrode 4B of the semiconductor substrate. Thus, with respect to all the conductive particles existing between the semiconductor substrate 3A and the semiconductor substrate 3B, the conductive particles not captured by the through electrodes between the semiconductor substrate 3A and the semiconductor substrate 3B can exist in excess of 5%. However, the conductive particles 11x that do not contribute to these connections between the semiconductor substrate 3A and the semiconductor substrate 3B contribute to the connection between the through electrode 4X of the wiring substrate 2 and the through electrode 4A of the first semiconductor substrate 3A. In addition, in a plan view of the multi-layer substrate 1C, at positions where the through electrodes do not face each other, no conductive particles are arranged or are substantially absent. That is, preferably, in the Figure 4 multi-layer substrate 1C shown, in each semiconductor substrate between any cross-sections in the film thickness direction of the multi-layer substrate, a state exists where conductive particles are present at positions overlapping all the through electrodes in the vertical direction.

[0096] When connecting the semiconductor substrates using such a common anisotropic conductive film in this way, the total cost required to manufacture the multi-layer substrate can be reduced. In addition, it is also possible to easily accommodate an increase (specification change) in the lineup of the multi-layer substrate.

[0097] As described above, in the multilayer substrate of the present invention, when the multilayer substrate is viewed from above, conductive particles are selectively present at positions facing the through electrodes. Moreover, the conductive particles arranged in this way connect the opposing through electrodes, and semiconductor substrates having the through electrodes are bonded to each other by an insulating adhesive. In this case, the opposing through electrodes can be connected by conductive particles 11 selectively arranged only between the opposing through electrodes as shown in Figure 1 , or, as shown in Figure 4 , conductive particles 11x that do not contribute to the connection of the opposing through electrodes may be included between the semiconductor substrates having the opposing through electrodes.

[0098] <Deformation Mode 2>

[0099] Figure 5A The multilayer substrate 1D shown in Figure 1 is a substrate in which the opposing through electrodes 4X, 4A, 4B, and 4C in the multilayer substrate 1A shown in Figure 5B are each connected by two or more conductive particles 11.

[0100] In this anisotropic conductive film 10D, a conductive particle unit 11u in which two or more conductive particles 4 are arranged in close proximity is formed on the insulating adhesive layer 12. Each conductive particle unit 11u is preferably arranged corresponding to the arrangement of the through electrodes connected by the anisotropic conductive film 1D so that the opposing through electrodes are connected by a plurality of conductive particles 11 constituting the conductive particle unit 11u. By connecting the opposing through electrodes with a plurality of conductive particles 11 constituting the conductive particle unit 11u, the conduction resistance after connection can be made more robust compared to the case of connecting with individual conductive particles.

[0101] In the anisotropic conductive film, the number of conductive particles constituting the conductive particle unit 11u is two or more, and from the viewpoint of conduction stability, it is more preferably three or more. In addition, when performing anisotropic conductive connection, by making the conductive particles exist not only in the electrode plane of the opposing through electrodes but also on the outer periphery of the electrodes, the allowable range of film adhesion deviation can be expanded. From this aspect, the number of conductive particles constituting the conductive particle unit 11u is preferably 30 or less, and more preferably 20 or less.

[0102] In addition, from the aspect of facilitating the capture of a plurality of conductive particles by the opposing portions of the via electrodes, in the conductive particle unit 11u, it is preferable that the distance L between any conductive particle in the conductive particle unit 11u and the conductive particle closest to the conductive particle is less than 0.5 times the diameter of the conductive particle, and it is also possible to bring adjacent conductive particles into contact with each other. On the other hand, from the aspect of preventing the conductive particles 11 from being more crushed during anisotropic conductive connection and interfering with each other, causing the arrangement of the conductive particles to deviate from the desired position, adjacent conductive particles in the conductive particle unit 11u are preferably separated by 0.2 times or more the diameter of the conductive particle.

[0103] <Modified Mode 3>

[0104] In the case of connecting semiconductor substrates using a common anisotropic conductive film to reduce the total cost required for manufacturing a multilayer substrate, it is also possible to use an anisotropic conductive film having conductive particle units 11u arranged on one side to manufacture the multilayer substrate. In this case, the number of conductive particles constituting each conductive particle unit 11u is 3 or more, preferably 12 or more, more preferably 20 or more, and the conductive particles are arranged in a planar shape rather than in a single row within each conductive particle unit. In order to avoid short circuits, the distance between the conductive particle units 11u is set to 1 time or more the diameter of the conductive particle, and is appropriately determined according to the electrode pitch of the semiconductor substrate. The ratio of the diameter or the length of the longest side of the conductive particle unit to the diameter or the length of the longest side of the electrode, if too small, results in poor capture of the conductive particles in the electrode, and if too large, there is a concern of short circuits. Therefore, the lower limit is preferably 0.3 times or more, more preferably 0.5 times or more, further preferably 0.7 times or more, and the upper limit is preferably 3 times or less, more preferably 2 times or less. In addition, if the diameter or the length of the longest side of the conductive particle unit is less than an equal multiple of the diameter or the length of the longest side of the electrode, the conductive particle unit will be collected into the electrode, so that the holding state of the conductive particles is likely to be good, and if it is an equal multiple or more, the margin in the alignment of the conductive particles with the electrode will increase, so that it is possible to seek to shorten the manufacturing time of the multilayer substrate.

[0105] By commonly using an anisotropic conductive film having conductive particle units 11u arranged at appropriate intervals on one side, compared with the case of using anisotropic conductive films with different arrangements of conductive particles for each connected semiconductor substrate, the manufacturing cost of the multilayer substrate can be significantly reduced. The present invention also includes such an anisotropic conductive film and a multilayer substrate using the same.

[0106] The multilayer substrate of the present invention can be used in various applications of various semiconductors that require high-density mounting, such as high-density semiconductor packages. In addition, the multilayer substrate can also be cut into a predetermined size for use.

[0107] Examples

[0108] Hereinafter, the present invention will be specifically described using examples.

[0109] Examples 1 to 3, Comparative Example 1

[0110] (1) Semiconductor substrate

[0111] As the semiconductor substrate 3 constituting the multilayer substrate, a rectangle with an outer shape of a square with a side length of 7 mm and a thickness of 200 μm was prepared, and as shown Figure 6 , a substrate was formed with through electrodes 4 made of chromium electrode pads arranged peripherally (φ30 μm, 85 μm pitch, 280 pins). As an alignment mark, a quadrilateral mark in the shape of a square with a side length of 200 μm was formed on the semiconductor substrate.

[0112] (2) Manufacture of anisotropic conductive film

[0113] As shown in Table 1, anisotropic conductive films were manufactured in which conductive particles (fine solder powder, Mitsui Mining & Smelting Co., Ltd.) of a predetermined particle size were randomly arranged in the insulating adhesive layer (Comparative Example 1, particle density 17.1 pieces / mm 2 ), or arranged corresponding to the electrode arrangement of the semiconductor substrate (Examples 1 to 3, 85 μm pitch, 280 places).

[0114] In this case, in Examples 1 and 2, as shown Figure 6 , one conductive particle 11 was arranged at each of the electrodes 4. In Example 3, as shown Figure 7 , three conductive particles 11 were arranged at each of the electrodes 4.

[0115] In addition, in Examples 1 to 3, alignment marks were formed by the arrangement of the conductive particles. In this case, the contour of the arrangement of the conductive particles was made substantially consistent with the contour of the alignment mark on the semiconductor substrate.

[0116] More specifically, a nickel plate with a thickness of 2 mm was prepared, patterned so that the convex portions (diameter 25 μm, height 20 μm) were arranged in the above electrode configuration to produce a transfer master, and a photopolymerizable resin composition containing 60 parts by mass of phenoxy resin (YP - 50, Nippon Steel & Sumikin Chemical Co., Ltd.), 29 parts by mass of acrylate resin (M208, Toagosei Co., Ltd.), and 2 parts by mass of a photopolymerization initiator (IRGACURE184, BASF JAPAN Ltd.) was applied to the transfer master so that the dry thickness was 30 μm, and after drying at 80 °C for 5 minutes, 1000 mJ of light irradiation was performed using a high-pressure mercury lamp to produce a transfer mold with recesses.

[0117] On the other hand, an insulating adhesive-forming composition was prepared by mixing 60 parts by mass of a phenoxy resin (YP-50, Nippon Steel & Sumikin Chemical Co., Ltd.), 40 parts by mass of an epoxy resin (jER828, Mitsubishi Chemical Corporation), and 2 parts by mass of a cationic curing agent (SI-60L, Sanshin Chemical Industry Co., Ltd.). This composition was coated onto a PET film with a thickness of 50 μm and dried in an oven at 80°C for 5 minutes to form an adhesive layer made of an insulating resin with a thickness of 5 μm on the PET film.

[0118] The transfer mold having the aforementioned recesses was filled with conductive particles, and the adhesive layer of the above insulating resin was covered thereon. Ultraviolet rays were irradiated to cure the curable resin contained in the insulating resin. Then, the insulating resin was peeled off from the mold, and an insulating resin layer (thickness: 15 μm) prepared in the same manner as the adhesive layer was laminated at 60°C and 0.5 MPa to manufacture the anisotropic conductive film of each example.

[0119] On the other hand, the anisotropic conductive film of Comparative Example 1 in which conductive particles were randomly dispersed was manufactured by stirring the conductive particles and the insulating resin using a planetary mixer (THINKY Corporation) to obtain a dispersion of the conductive particles, and forming a coating film of this dispersion with a thickness of 20 μm.

[0120] (3) Manufacture of Multilayer Substrate

[0121] The semiconductor substrates prepared in (1) were laminated using the anisotropic conductive films manufactured in (2) in the number of laminations shown in Table 1, and heated and pressed (180°C, 40 MPa, 20 seconds) to manufacture a multilayer substrate.

[0122] (4) Evaluation

[0123] For the obtained multilayer substrates, the following evaluations were made: (a) conduction resistance, (b) conduction reliability, and (c) short-circuit incidence rate. These results are shown in Table 1.

[0124] (a) Conduction Resistance

[0125] Using a digital multimeter (34401A, Agilent Technologies, Inc.) and the four-terminal method, a current of 1 mA was passed through, and the conduction resistance between the electrodes on the front and back surfaces of the multilayer substrate was measured. A measured resistance value of 5 Ω or less was set as "OK", and a value exceeding 5 Ω was set as "NG".

[0126] (b) Conduction Reliability

[0127] The conduction resistance of the multilayer substrate after being placed in a constant temperature bath at 85°C and 85% RH for 500 hours was measured in the same manner as in (a). A conduction resistance of 10 Ω or less was set as "OK", and a value exceeding 10 Ω was set as "NG".

[0128] (c) Short - circuit incidence rate

[0129] Peel the stacked semiconductor substrates one by one, and observe whether adjacent electrodes are short - circuited due to conductive particles. Set the case without short - circuit as "OK", and set it as "NG" even if there is one short - circuit.

[0130] [Table 1]

[0131] Comparative Example 1 Example 1 Example 2 Example 3 Number of stacked semiconductor substrates 3 3 4 3 Particle size (μm) 20 20 20 10 On-resistance NG OK OK OK Conduction reliability (85°C, 85% RH, 500 hr) NG OK OK OK Short-circuit incidence rate OK OK OK OK

[0132] According to Table 1, in Comparative Example 1 where an anisotropic conductive film with randomly dispersed conductive particles is used to connect the first semiconductor substrate and the second semiconductor substrate, the conduction resistance or conduction reliability is poor. However, in Examples 1 - 3 where the conductive particles are selectively arranged corresponding to the electrodes, the conduction resistance, conduction reliability, and short - circuit incidence rate are all good.

[0133] In addition, in Example 3, since three conductive particles 11 are arranged in the through - electrode 4, room can be obtained in the alignment of the anisotropic conductive film and the semiconductor substrate.

[0134] Examples 4 - 11

[0135] In Examples 4 - 7, except that in Example 1, gold / nickel - coated resin particles (MICRO PEARL, Sekisui Chemical Co., Ltd.) with the average particle size shown in Table 2 are used as the conductive particles, and as shown in Table 2, the number of conductive particles for each electrode, the arrangement of the conductive particles with respect to the electrodes, and the closest distance between the conductive particles are changed, and instead of forming an alignment mark using the arrangement of the conductive particles, the conductive particles and the electrodes are directly aligned and the film is bonded. Repeat the operations of Example 1 to manufacture an anisotropic conductive film, and manufacture a multilayer substrate using the anisotropic conductive film, and evaluate the multilayer substrate. As a result, in any of Examples 4 - 7, the conduction resistance, conduction reliability, and short - circuit incidence rate are all good. In addition, in Examples 5, 7, and 9, even without the arrangement of conductive particles corresponding to the alignment mark, since there are also conductive particles at the outer peripheral part of the electrode, the allowable range of position deviation in the film bonding process can also be expanded.

[0136] In addition, in Examples 8 - 11, the outer shape of each electrode 4 of the electrodes (85μm pitch, 280 terminals (pin)) arranged on the periphery of the semiconductor substrate is changed from a circle with a diameter of φ30μm to a rectangle of 30μm×50μm (the arrangement direction of the electrodes is 30μm), and the same operations as in Examples 4 - 7 are repeated. As a result, in any of Examples 8 - 11, the conduction resistance, conduction reliability, and short - circuit incidence rate are all good.

[0137] [Table 2]

[0138]

[0139] Reference Example 1

[0140] Except that the conductive particles in Example 1 were nickel-coated resin particles (MICRO PEARL, Sekisui Chemical Co., Ltd.) with an average particle diameter of 10 μm, and the arrangement of the conductive particles was a four-square lattice with a distance between conductive particles of 10 μm (number density of conductive particles: 2500 particles / mm 2 ), the same operations as in Example 1 were repeated to produce an anisotropic conductive film, and a multilayer substrate using the anisotropic conductive film was produced and evaluated. As a result, the conduction resistance, conduction reliability, and short-circuit incidence rate of any of the examples were good.

[0141] Reference Example 2

[0142] Except that the conductive particles in Example 1 were nickel-coated resin particles (MICROPEARLAUL704, Sekisui Chemical Co., Ltd.) with an average particle diameter of 4 μm, and the arrangement of the conductive particles was a four-square lattice with a distance between conductive particles of 4 μm (number density of conductive particles: 16000 particles / mm 2 ), the same operations as in Example 1 were repeated to produce an anisotropic conductive film, and a multilayer substrate using the anisotropic conductive film was produced and evaluated. As a result, the conduction resistance, conduction reliability, and short-circuit incidence rate of any of the examples were good.

[0143] Reference Signs Explanation

[0144] 1A, 1B, 1C, 1D Multilayer substrates; 2 Wiring substrate; 3, 3A, 3B, 3C Semiconductor substrates; 4, 4A, 4B, 4C, 4x Through electrodes; 5 Solder balls; 6 Heat sinks; 10A, 10B, 10D Anisotropic conductive films; 11, 11x Conductive particles; 11u Conductive particle unit; 12 Insulating adhesive or insulating adhesive layer; L Distance between conductive particles.

Claims

1. A multi-layer substrate in which semiconductor substrates having through electrodes are laminated, in a plan view of the multi-layer substrate, conductive particles are present at least at positions opposed to the through electrodes, conductive particle units in which three or more conductive particles are close to each other are formed, and the conductive particle units include, in addition to the conductive particle units selectively disposed between the opposed through electrodes, conductive particle units that do not contribute to the connection of the opposed through electrodes, an anisotropic conductive film is commonly used between each adjacent two semiconductor substrates in the multi-layer substrate, and the conductive particle units are disposed on one surface of the anisotropic conductive film at intervals determined corresponding to the intervals of the through electrodes in an insulating adhesive, and a ratio of a diameter or a longest side length of the conductive particle units to a diameter or a longest side length of the electrodes is 0.7 times or more and 2 times or less, the multi-layer substrate has a connection structure in which opposed through electrodes are connected by the conductive particles and semiconductor substrates having the through electrodes are bonded to each other by the insulating adhesive.

2. The multi-layer substrate according to claim 1, which is a multi-layer substrate in which a first semiconductor substrate having a through electrode and a second semiconductor substrate having a through electrode are laminated, the multi-layer substrate has a connection structure in which the through electrode of the first semiconductor substrate and the through electrode of the second semiconductor substrate are connected by conductive particles disposed therebetween.

3. The multi-layer substrate according to claim 2, wherein, a third semiconductor substrate having a through electrode is laminated on the second semiconductor substrate, the multi-layer substrate has such a connection structure: the through electrode of the second semiconductor substrate is opposed to the through electrode of the third semiconductor substrate and is connected by conductive particles disposed therebetween, the through electrode of the second semiconductor substrate is connected to the through electrode of the first semiconductor substrate, and the second semiconductor substrate and the third semiconductor substrate are bonded by an insulating adhesive.

4. The multi-layer substrate according to claim 1, wherein, The number of conductive particles not captured by the opposed through electrodes between the first semiconductor substrate and the second semiconductor substrate is 5% or less of the total number of conductive particles present between the first semiconductor substrate and the second semiconductor substrate.

5. The multilayer substrate according to claim 1, wherein, A heat sink is provided on the outermost layer of the multi-layer substrate, and the heat sink is connected to the through electrodes connected by the conductive particles so as to be connected in the lamination direction of the multi-layer substrate.

6. The multi-layer substrate according to any one of claims 1 to 5, wherein, The conductive particles captured by the opposed through electrodes are one or more.

7. A method for manufacturing a multi-layer substrate, in which through electrodes formed on semiconductor substrates are opposed to each other and joined, an anisotropic conductive film in which conductive particles are disposed in an insulating adhesive layer is sandwiched between semiconductor substrates having through electrodes at least at positions corresponding to positions opposed to the through electrodes in a plan view of the multi-layer substrate, and the anisotropic conductive film is heated and pressed to anisotropically conductively connect these semiconductor substrates, the anisotropic conductive film is commonly used between each adjacent two semiconductor substrates in the multi-layer substrate, and the conductive particles are selectively disposed in the insulating adhesive layer at positions corresponding to positions where the through electrodes are opposed to each other, The conductive particles include, in addition to the conductive particles selectively disposed between the opposing through electrodes, conductive particles that do not contribute to the connection of the opposing through electrodes.

8. The method for manufacturing a multilayer substrate according to claim 7, which is a method for manufacturing a multilayer substrate by bonding a first semiconductor substrate having a through electrode and a second semiconductor substrate having a through electrode such that their through electrodes face each other. An anisotropic conductive film in which conductive particles are disposed at least corresponding to the arrangement of the through electrodes is sandwiched between the first semiconductor substrate and the second semiconductor substrate in an insulating adhesive layer, and the anisotropic conductive film is heated and pressed to anisotropically conductively connect the first semiconductor substrate and the second semiconductor substrate.

9. The manufacturing method of the multi-layer substrate according to claim 7, wherein, A third semiconductor substrate having a through electrode is laminated on the second semiconductor substrate, and an anisotropic conductive film in which conductive particles are disposed at least corresponding to the arrangement of the through electrodes is sandwiched between the through electrode of the second semiconductor substrate anisotropically conductively connected to the through electrode of the first semiconductor substrate and the through electrode of the third semiconductor substrate, and the anisotropic conductive film is heated and pressed to anisotropically conductively connect the second semiconductor substrate and the third semiconductor substrate.

10. The manufacturing method of the multilayer substrate according to any one of claims 7 to 9, wherein, One or more conductive particles are captured by the opposing through electrodes.

11. A multilayer substrate in which semiconductor substrates having through electrodes are laminated. In a plan view of the multilayer substrate, conductive particles are present at least at positions facing the through electrodes. Conductive particle units in which three or more conductive particles are close to each other are formed. The conductive particle units include, in addition to the conductive particle units selectively disposed between the opposing through electrodes, conductive particle units that do not contribute to the connection of the opposing through electrodes. In the conductive particle unit, the distance between any conductive particle and the conductive particle closest to it is 0.2 to 0.5 times the diameter of the conductive particle. An anisotropic conductive film is commonly used between every two adjacent semiconductor substrates in the multilayer substrate. The anisotropic conductive film disposes the conductive particle units on one surface at intervals determined corresponding to the intervals of the through electrodes in an insulating adhesive. The multilayer substrate has a connection structure in which opposing through electrodes are connected by the conductive particles and semiconductor substrates having the through electrodes are bonded to each other by the insulating adhesive.

12. The multilayer substrate according to claim 11, which is a multilayer substrate in which a first semiconductor substrate having a through electrode and a second semiconductor substrate having a through electrode are laminated. The multilayer substrate has a connection structure in which the through electrode of the first semiconductor substrate and the through electrode of the second semiconductor substrate are connected by conductive particles disposed between them.

13. The multilayer substrate according to claim 12, wherein a third semiconductor substrate having a through electrode is laminated on the second semiconductor substrate. The multilayer substrate has such a connection structure: The through electrodes of the second semiconductor substrate face the through electrodes of the third semiconductor substrate and are connected by conductive particles disposed therebetween. The through electrodes of the second semiconductor substrate are connected to the through electrodes of the first semiconductor substrate, and the second semiconductor substrate and the third semiconductor substrate are bonded by an insulating adhesive.

14. The multi-layer substrate according to claim 11, wherein, The number of conductive particles not captured by the opposing through electrodes between the first semiconductor substrate and the second semiconductor substrate is 5% or less of the total number of conductive particles present between the first semiconductor substrate and the second semiconductor substrate.

15. The multi-layer substrate according to claim 11, wherein, A heat sink is provided on the outermost layer of the multilayer substrate, and the heat sink is connected to the through electrodes that are connected by conductive particles and are connected in the stacking direction of the multilayer substrate.

16. The multilayer substrate according to any one of claims 11 to 15, wherein, There is one or more conductive particles captured by the opposing through electrodes.

17. A method for manufacturing a multilayer substrate, in which through electrodes formed on semiconductor substrates face each other and are joined. An anisotropic conductive film in which conductive particles are disposed in an insulating adhesive layer is sandwiched between semiconductor substrates having through electrodes, corresponding to at least the positions of the portions where the through electrodes face each other in a plan view of the multilayer substrate. The anisotropic conductive film is heated and pressed to anisotropically conductively connect these semiconductor substrates. In this conductive particle unit, the distance between any conductive particle and the conductive particle closest to it is 0.2 to 0.5 times the diameter of the conductive particle. The anisotropic conductive film is commonly used between each adjacent two semiconductor substrates in the multilayer substrate, and the conductive particle units are disposed on one surface of the anisotropic conductive film at intervals determined corresponding to the intervals of the through electrodes in the insulating adhesive layer. In addition to the conductive particle units selectively disposed between the opposing through electrodes, the conductive particle unit further includes conductive particle units that do not contribute to the connection of the opposing through electrodes.

18. The method for manufacturing a multilayer substrate according to claim 17, which is a method for manufacturing a multilayer substrate in which a first semiconductor substrate having through electrodes and a second semiconductor substrate having through electrodes are joined with their through electrodes facing each other. An anisotropic conductive film in which conductive particles are disposed in an insulating adhesive layer is sandwiched between the first semiconductor substrate and the second semiconductor substrate, and the anisotropic conductive film is heated and pressed to anisotropically conductively connect the first semiconductor substrate and the second semiconductor substrate.

19. The manufacturing method of the multilayer substrate according to claim 17, wherein, A third semiconductor substrate having through electrodes is laminated on the second semiconductor substrate. An anisotropic conductive film in which conductive particles are disposed in an insulating adhesive layer is sandwiched between the through electrodes of the second semiconductor substrate that are anisotropically conductively connected to the through electrodes of the first semiconductor substrate and the through electrodes of the third semiconductor substrate, and the anisotropic conductive film is heated and pressed to anisotropically conductively connect the second semiconductor substrate and the third semiconductor substrate.

20. The method for manufacturing a multilayer substrate according to any one of claims 17 to 19, wherein, There is one or more conductive particles captured by the opposing through electrodes.

21. A structure formed by opposing and joining through electrodes formed on semiconductor substrates. An anisotropic conductive film in which conductive particles are disposed in an insulating adhesive layer is sandwiched between semiconductor substrates each having a through electrode, at least corresponding to the position in a plan view of the multilayer substrate where the portions opposed to the through electrodes are located, and the semiconductor substrates are anisotropically conductively connected by heating and pressing the anisotropic conductive film. The anisotropic conductive film is commonly used between every two adjacent semiconductor substrates in the multilayer substrate, and in the multilayer substrate, the through electrodes in the semiconductor substrates are regularly arranged. The conductive particles include, in addition to the conductive particles selectively disposed between the opposed through electrodes, conductive particles that do not contribute to the connection of the opposed through electrodes.

22. A method for manufacturing a structure, in which through electrodes formed on semiconductor substrates are opposed to each other and joined. An anisotropic conductive film in which conductive particles are disposed in an insulating adhesive layer is sandwiched between semiconductor substrates each having a through electrode, at least corresponding to the position in a plan view of the multilayer substrate where the portions opposed to the through electrodes are located, and the semiconductor substrates are anisotropically conductively connected by heating and pressing the anisotropic conductive film. The anisotropic conductive film is commonly used between every two adjacent semiconductor substrates in the multilayer substrate, and in the multilayer substrate, the through electrodes in the semiconductor substrates are regularly arranged. The conductive particles include, in addition to the conductive particles selectively disposed between the opposed through electrodes, conductive particles that do not contribute to the connection of the opposed through electrodes.

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