Deposition apparatus
By designing nozzle and crucible structures in the deposition apparatus of the display device, uniform mixing and deposition of different deposition materials are achieved, solving the problem of uneven deposition in the prior art and improving the performance of the display device.
Patent Information
- Application Number
- CN202110612779.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-06-05
- Filing Date
- 2021-06-02
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2041-06-02
AI Technical Summary
Existing technologies make it difficult to achieve uniform deposition of different materials on the substrate of a display device, which affects the performance of the display device, such as color coordinates, light efficiency, driving voltage, and lifespan.
A deposition apparatus is designed, comprising a housing, a nozzle, a crucible, and a connecting part. The nozzle is provided with adjacent first and second nozzle holes for discharging first and second deposition materials, respectively. The materials are uniformly mixed through independent flow channels and then deposited onto a substrate. The crucible temperature is independently controlled by a heater, heat insulation walls and reflectors reduce heat exchange, and an angle limiting part controls the deposition direction.
This technology enables uniform mixing and deposition of different materials on a substrate, improving the color coordinates, light efficiency, driving voltage, and lifespan of the display device.
Smart Images

Figure CN113755811B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a deposition device, and more particularly, to a deposition device for depositing an organic substance on a substrate of a display device. Background Art
[0002] A display device may include a plurality of pixels. Each of the plurality of pixels may include a light-emitting layer disposed between opposing electrodes. The electrodes and the light-emitting layer may be formed using a variety of methods, one of which may be a vacuum deposition method in which a predetermined substance is deposited in a vacuum atmosphere to form a thin film. The vacuum deposition method may be performed by placing a mask between a deposition source and a target substrate within a chamber, and causing a deposition substance from the deposition source to sublime or vaporize, thereby depositing the substance on the target substrate. Summary of the Invention
[0003] An object of the present invention is to provide a deposition apparatus capable of uniformly depositing different deposition materials on a target substrate.
[0004] According to one embodiment of the present invention, a deposition device includes: a shell; a nozzle, which is arranged on the shell and defines a first nozzle hole and a second nozzle hole adjacent to the first nozzle hole; a crucible, which is arranged inside the shell and has a first crucible for accommodating a first deposition material and a second crucible for accommodating a second deposition material; and a connecting portion, which has a first tube arranged between the first nozzle hole and the first crucible and a second tube arranged between the second nozzle hole and the second crucible.
[0005] According to one embodiment of the present invention, a deposition device includes: a shell extending along a first direction and moving along a second direction intersecting the first direction; a plurality of first nozzles and a plurality of second nozzles arranged on the shell and alternately arranged along the first direction; a crucible comprising a first crucible for accommodating a first deposition material and a second crucible for accommodating a second deposition material; and a connecting portion comprising a plurality of first tubes arranged between the first crucible and the first nozzle and a plurality of second tubes arranged between the second crucible and the second nozzle.
[0006] According to one embodiment of the present invention, a deposition device includes: a shell; a nozzle, which is arranged on the shell and defines a nozzle hole; a crucible, which is arranged inside the shell and has a first crucible for accommodating a first deposition material and a second crucible for accommodating a second deposition material; and a connecting portion, which has a first tube arranged between the nozzle hole and the first crucible and a second tube arranged between the nozzle hole and the second crucible.
[0007] According to an embodiment of the present invention, a first nozzle hole for discharging a first deposition material and a second nozzle hole for discharging a second deposition material are adjacently provided on a single nozzle, so that the first deposition material and the second deposition material can be provided to a target substrate in a uniformly mixed state. BRIEF DESCRIPTION OF THE DRAWINGS
[0008] Figure 1 FIG. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.
[0009] Figure 2 It is a schematic diagram Figure 1 A diagram showing how the deposition source moves.
[0010] Figure 3 It is a schematic diagram Figure 2 A perspective view of the deposition source is shown.
[0011] Figure 4 It is along Figure 3 Schematic cross-sectional view along line II' is shown.
[0012] Figure 5 FIG. 1 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention.
[0013] Figure 6 is a schematic diagram showing the Figure 5 The cross-sectional view of the cross-sectional shape along the II-II' line is shown.
[0014] Figure 7 is a schematic diagram showing the Figure 5 The cross-sectional view of the cross-sectional shape along the line III-III' is shown.
[0015] Figure 8 FIG. 1 is a cross-sectional view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention.
[0016] Figure 9 FIG. 1 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention.
[0017] Figure 10 FIG. 1 is a cross-sectional view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention. DETAILED DESCRIPTION
[0018] In the specification, when a certain structural element (or region, layer or part, etc.) is mentioned as being "located on", "connected to" or "coupled to" other structural elements, this means that it can be directly set / connected / coupled to the other structural elements or a third structural element may be set between them.
[0019] The same reference numerals refer to the same structural elements. In addition, in the drawings, the thickness, ratio and size of the structural elements are exaggerated in order to effectively illustrate the technical content.
[0020] "And / or" includes all combinations of more than one that can be defined by the associated structures.
[0021] Although the terms "first" and "second" can be used to describe a variety of structural elements, the structural elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one structural element from other structural elements. For example, without departing from the scope of the present invention, the first structural element can be named as the second structural element, and similarly, the second structural element can also be named as the first structural element. Regarding the expression of the singular, as long as other meanings are not clearly expressed in the context, the expression of the singular includes the expression of the plural number.
[0022] In addition, terms such as “below,” “on the lower side,” “above,” or “on the upper side” are used to describe the relationship between the structures shown in the drawings. These terms are relative concepts and are described based on the directions shown in the drawings.
[0023] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) have the same meanings as those commonly understood by those skilled in the art to which this invention belongs. Furthermore, terms such as those defined in commonly used dictionaries should be interpreted as having the same meanings as those in the context of the relevant art. Unless they are interpreted as idealistic or overly formal, they are clearly defined herein.
[0024] It should be understood that terms such as "including" or "having" are intended to specify the existence of features, numbers, steps, operations, structural elements, parts or their combinations recorded in the specification, and are not intended to exclude in advance the existence or additional possibility of one or more other features or numbers, steps, operations, structural elements, parts or their combinations.
[0025] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[0026] Figure 1 FIG. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.
[0027] Reference Figure 1 The deposition device DD may deposit a deposition material onto a target substrate SUB. For example, the target substrate SUB may be a substrate of a display device. The deposition material may include organic matter. The deposition material may be deposited onto the target substrate SUB to form an organic light-emitting element (OLED).
[0028] According to one embodiment of the present invention, the deposition apparatus DD may include a chamber CH, a moving plate MP, a mask assembly MK, and a deposition source SO.
[0029] The chamber CH may have a sealed interior. The movable plate MP, mask assembly MK, and deposition source SO may be disposed within the interior of the chamber CH. The chamber CH may have one or more gates GA. For example, the gates GA may be disposed on the sidewalls of the chamber CH. The gates GA can open and close the chamber CH. For example, a target substrate SUB can enter and exit the chamber CH via the gates GA.
[0030] The movable plate MP is movable within the chamber CH. For example, the movable plate MP is movable in a first direction DR1, a second direction DR2, and a third direction DR3 with its upper portion connected to the ceiling of the chamber CH. In this specification, the first direction DR1 and the second direction DR2 intersecting the first direction DR1 substantially define a horizontal direction, and the third direction DR3 defines a vertical direction.
[0031] A target substrate SUB can be placed under the movable plate MP. The movable plate MP can hold the target substrate SUB using electrostatic force or magnetic force. The movable plate MP can move the target substrate SUB within the chamber CH.
[0032] The mask assembly MK may be disposed between the target substrate SUB and a deposition source SO described later. The mask assembly MK may overlap the target substrate SUB. The mask assembly MK may be supported by a support member SU disposed inside the chamber CH.
[0033] A plurality of openings OP may be defined in the mask assembly MK, and the deposition material discharged from the deposition device DD may be deposited on the target substrate SUB through the openings OP.
[0034] The deposition source SO may be disposed below the mask assembly MK. The deposition source SO may contain a deposition material therein. The deposition source SO may vaporize or sublime the deposition material therein and provide the deposition material to the target substrate SUB.
[0035] Figure 2 It is a schematic diagram Figure 1 For the convenience of explanation, the deposition source is moved in the figure. Figure 2 Middle icon Figure 1 The target substrate SUB and the deposition source SO are shown, and illustration of the remaining structures is omitted.
[0036] Reference Figure 2 The object substrate SUB may be disposed above the deposition source SO. One side of the object substrate SUB may be opposite to the deposition source SO. The object substrate SUB may include two sides extending along the first direction DR1 and two sides extending along the second direction DR2.
[0037] The target substrate SUB may have a quadrilateral shape when viewed from above. In this specification, "when viewed from above" means a state viewed from a third direction DR3.
[0038] The deposition source SO may be spaced apart from the target substrate SUB. For example, the deposition source SO may be spaced apart from the target substrate SUB by a distance TS in the third direction DR3. The deposition source SO may extend along the first direction DR1. The deposition source SO may move along the second direction DR2.
[0039] According to one embodiment of the present invention, while the target substrate SUB is fixed, the deposition source SO can move along the second direction DR2 while providing deposition material to one side of the target substrate SUB. However, the present invention is not limited to this. For example, the target substrate SUB can also be moved along the second direction DR2 while the deposition source SO is fixed to deposit the deposition material. In this case, the target substrate SUB can be moved along the second direction DR2. Figure 1 The mobile plate MP shown is moved.
[0040] The deposition source SO can provide a deposition material containing different substances to the target substrate SUB. A uniform mixture of the deposition materials can improve characteristics such as the color coordinates, light efficiency, driving voltage, and lifespan of the display device. The deposition source SO of one embodiment of the present invention has a structure capable of providing a uniform mixture of deposition materials to the target substrate SUB.
[0041] Next, the structure of the deposition source SO of the present invention will be described in more detail.
[0042] Figure 3 It is a schematic diagram Figure 2 A perspective view of the deposition source is shown. Figure 4 It is along Figure 3 Schematic cross-sectional view along line II' is shown.
[0043] Reference Figure 3 and Figure 4 A deposition source SO according to an embodiment of the present invention includes a housing HO, a plurality of nozzles NO, a crucible CB, and a connecting portion.
[0044] According to an embodiment of the present invention, the housing HO may form an overall outer shape of the deposition source SO. The housing HO may extend along the first direction DR1. The housing HO may include a body BO and a cover CV.
[0045] The main body BO may have an empty space inside. A crucible CB, described later, may be provided inside the main body BO. The upper portion of the main body BO may be open. A cover CV may be coupled to the upper portion of the main body BO. The cover CV may be detachable from the main body BO.
[0046] Multiple nozzles NO may be provided on the housing HO. For example, the nozzles NO may be provided on the cover CV of the housing HO. The nozzles NO may be manufactured separately from the housing HO and then coupled to the cover CV. However, this is not limiting and the nozzles NO may also be integrally formed with the cover CV.
[0047] The nozzles NO may be arranged along the first direction DR1. Adjacent nozzles NO along the first direction DR1 may be spaced apart from each other. Figure 3 The figure shows that ten nozzles NO are provided on the housing HO, but this is only a schematic illustration, and the number of nozzles NO may be different.
[0048] According to one embodiment of the present invention, each nozzle NO may be defined with a first nozzle hole NH1 and a second nozzle hole NH2. The first nozzle hole NH1 may be adjacent to the second nozzle hole NH2. For example, the second nozzle hole NH2 may be positioned adjacent to the first nozzle hole NH1 along the second direction DR2. The distance between the first nozzle hole NH1 and the second nozzle hole NH2 may be substantially close to zero, relative to the second direction DR2. When viewed from the second direction DR2, the first nozzle hole NH1 may overlap with the second nozzle hole NH2.
[0049] When viewed from above, the first nozzle hole NH1 and the second nozzle hole NH2 may have a circular shape, but are not limited thereto. The first nozzle hole NH1 and the second nozzle hole NH2 may be deformed into various shapes such as a polygon or an ellipse.
[0050] When viewed from above, the first nozzle hole NH1 and the second nozzle hole NH2 may have the same diameter, but are not limited thereto and may have the same or different diameters depending on the type or discharge amount of the deposition material.
[0051] According to one embodiment of the present invention, a crucible CB may be disposed inside the housing HO. The crucible CB may include a first crucible CB1 and a second crucible CB2. The first crucible CB1 and the second crucible CB2 may be disposed inside the main body BO of the housing HO. The second crucible CB2 may be spaced apart from the first crucible CB1 in the second direction DR2. The first crucible CB1 and the second crucible CB2 may each extend long in the first direction DR1 corresponding to the shape of the main body BO.
[0052] The first crucible CB1 may contain a first deposition material DM1. For example, the first deposition material DM1 may be a host material. The second crucible CB2 may contain a second deposition material DM2. For example, the second deposition material DM2 may be a dopant material. Figure 4 1 and 2 are shown in the figure as having the same size, but the sizes of the first crucible CB1 and the second crucible CB2 may be different from each other.
[0053] According to an embodiment of the present invention, a connection portion may connect the nozzle NO and the crucible CB. For example, the connection portion may include a first tube TU1 and a second tube TU2. The first tube TU1 may be disposed between the first nozzle hole NH1 and the first crucible CB1. The first tube TU1 may have a tubular shape with a hollow interior.
[0054] For example, the first tube TU1 may include a first portion PO1, a second portion PO2, and a third portion PO3. One end of the first portion PO1 may be connected to the first crucible CB1. The first portion PO1 may extend along the third direction DR3. The first portion PO1 may be disposed inside the housing HO.
[0055] The second portion PO2 may extend from the first portion PO1. The second portion PO2 may be inclined at a predetermined angle relative to the second direction DR2. For example, Figure 4 As a reference, the second portion PO2 may be inclined more toward the right as it approaches the upper portion. The second portion PO2 may be provided inside the nozzle NO.
[0056] The third portion PO3 may extend from the second portion PO2. The third portion PO3 may extend along the third direction DR3. The other end of the third portion PO3 may be connected to the first nozzle hole NH1. The third portion PO3 may be disposed inside the nozzle NO.
[0057] According to an embodiment of the present invention, a first flow channel may be defined by the first crucible CB1, the first tube TU1, and the first nozzle hole NH1. The first deposition material DM1 may be discharged out of the nozzle NO through the first flow channel.
[0058] The second tube TU2 may be disposed between the second nozzle hole NH2 and the second crucible CB2. The second tube TU2 may have a tube shape having a hollow formed therein.
[0059] For example, the second tube TU2 may include a fourth portion PO4, a fifth portion PO5, and a sixth portion PO6. One end of the fourth portion PO4 may be connected to the second crucible CB2. The fourth portion PO4 may extend along the third direction DR3. The fourth portion PO4 may be disposed inside the housing HO.
[0060] The fifth portion PO5 may extend from the fourth portion PO4. The fifth portion PO5 may be inclined at a prescribed angle relative to the second direction DR2. Figure 4 As a reference, the fifth portion PO5 may be inclined more toward the left as it moves upward. Thus, the distance between the first tube TU1 and the second tube TU2 in the second direction DR2 may be gradually reduced. The fifth portion PO5 may be disposed inside the nozzle NO.
[0061] The sixth portion PO6 may extend from the fifth portion PO5. The sixth portion PO6 may extend along the third direction DR3. The other end of the sixth portion PO6 may be connected to the second nozzle hole NH2. The sixth portion PO6 may be disposed inside the nozzle NO.
[0062] According to one embodiment of the present invention, a second flow channel may be defined by the second crucible CB2, the second tube TU2, and the second nozzle hole NH2. The second deposition material DM2 may be discharged out of the nozzle NO through the second flow channel.
[0063] In addition, it can be seen from the above content that the distance between the portion of the first tube TU1 and the portion of the second tube TU2 adjacent to the first nozzle hole NH1 and the second nozzle hole NH2 respectively is smaller than the distance between the portion of the first tube TU1 and the portion of the second tube TU2 adjacent to the first crucible CB1 and the second crucible CB2 respectively.
[0064] The inner diameters of the first tube TU1 and the second tube TU2 can be constant. For example, the inner diameters of the first, second, and third sections PO1, PO2, and PO3 can be the same as the diameter of the first nozzle hole NH1. The inner diameters of the fourth, fifth, and sixth sections PO4, PO5, and PO6 can be the same as the diameter of the second nozzle hole NH2. However, this is not limiting. For example, the first tube TU1 and the second tube TU2 can each include a section with a locally variable inner diameter.
[0065] The first tube TU1 and the second tube TU2 may be formed independently of the housing HO and the nozzle NO and disposed inside the housing HO and the nozzle NO. However, the present invention is not limited thereto and the first tube TU1 and the second tube TU2 may be formed integrally with the housing HO and the nozzle NO.
[0066] According to an embodiment of the present invention, the first deposition material DM1 may be discharged out of the nozzle NO through the first flow channel, and the second deposition material DM2 may be discharged out of the nozzle NO through the second flow channel.
[0067] If the first deposition material DM1 and the second deposition material DM2 were mixed within the deposition source SO, the vaporization temperature difference between the first deposition material DM1 and the second deposition material DM2 might cause one of the deposition materials to flow backward. However, according to this embodiment, the first deposition material DM1 and the second deposition material DM2 are not mixed within the deposition source SO and are discharged along independent flow paths, thereby preventing the deposition materials from flowing backward.
[0068] According to an embodiment of the present invention, since the first nozzle hole NH1 discharging the first deposition material DM1 and the second nozzle hole NH2 discharging the second deposition material DM2 are adjacently disposed, the first deposition material DM1 and the second deposition material DM2 discharged from the nozzle holes NH1 and NH2 can be uniformly mixed and provided to the target substrate SUB.
[0069] According to an embodiment of the present invention, the deposition source SO may include heaters HE1 and HE2 , a heat insulation wall IN, and a reflector RF. The heaters HE1 and HE2 , the heat insulation wall IN, and the reflector RF may be disposed inside the housing HO.
[0070] The heaters HE1 and HE2 may be disposed between the inner wall of the housing HO and the crucible CB. Specifically, the heaters HE1 and HE2 may include a first heater HE1 and a second heater HE2.
[0071] The first heater HE1 may be disposed between the inner wall of the housing HO and the first crucible CB1. The first heater HE1 may apply heat to the first crucible CB1. The first deposition material DM1 accommodated inside the first crucible CB1 may be vaporized or sublimated by the heat applied to the first heater HE1.
[0072] The second heater HE2 may be disposed between the inner wall of the housing HO and the second crucible CB2. The second heater HE2 may apply heat to the second crucible CB2. The second deposition material DM2 accommodated inside the second crucible CB2 may be vaporized or sublimated by the heat applied to the second heater HE2.
[0073] The first heater HE1 and the second heater HE2 can operate independently of each other. For example, the amount of heat energy applied by the first heater HE1 to the first crucible CB1 can be different from the amount of heat energy applied by the second heater HE2 to the second crucible CB2. As a result, the temperature inside the first crucible CB1 and the temperature inside the second crucible CB2 can be different.
[0074] exist Figure 4 The first heater HE1 and the second heater HE2 are shown in the figure as being disposed on the side surfaces of the first crucible CB1 and the second crucible CB2, but the present invention is not limited thereto. For example, the first heater HE1 and the second heater HE2 may be disposed below the first crucible CB1 and the second crucible CB2.
[0075] According to one embodiment of the present invention, the thermal insulation wall IN can respectively cover the first crucible CB1 and the second crucible CB2. The thermal insulation wall IN can prevent the heat inside the housing HO from escaping to the outside of the housing HO. This can minimize the impact of heat generated in the deposition source SO on the target substrate SUB.
[0076] Furthermore, the heat insulating wall IN provided between the first crucible CB1 and the second crucible CB2 can block heat exchange between the first crucible CB1 and the second crucible CB2 , thereby making it easy to independently control the temperatures of the first crucible CB1 and the second crucible CB2 .
[0077] According to one embodiment of the present invention, a reflector RF may be provided between the nozzle NO and the first crucible CB1 and the second crucible CB2. The reflector RF may include a heat insulating material. The reflector RF can prevent the heat of the first crucible CB1 and the second crucible CB2 from flowing out toward the upper portion of the housing HO. Thus, the reflector RF can block the heat from flowing toward the target substrate SUB (refer to FIG. 1 ) provided above the deposition source SO. Figure 1 )The heat flowing out.
[0078] According to one embodiment of the present invention, the distance TS between the deposition source SO and the target substrate SUB (refer to Figure 2 ) can be reduced. Thus, it is possible to improve the deposition of the deposition material onto the target substrate SUB (refer to Figure 2 ) efficiency.
[0079] According to one embodiment of the present invention, the deposition source SO may further include an angle limiting portion AC. The angle limiting portion AC may be disposed on the cover CV of the housing HO. Specifically, two angle limiting portions AC may be disposed on either side of the cover CV. The angle limiting portions AC may extend along a first direction DR1. The angle limiting portions AC may be spaced apart in a second direction DR2. The nozzle NO may be disposed between the angle limiting portions AC. However, the shape of the angle limiting portions AC is not limited to the aforementioned configuration.
[0080] The angle limiting portion AC may be higher than the nozzle NO. The angle limiting portion AC may limit the discharge direction of the first deposition material DM1 and the second deposition material DM2 discharged from the nozzle NO. This can reduce the amount of deposition material wasted by discharge to the outside of the target substrate SUB.
[0081] Next, a deposition source having a structure different from that of the previous embodiment will be described. In the following description, descriptions of the same structures as those of the previous embodiment will be omitted, and the structures having differences will be mainly described in detail.
[0082] Figure 5 FIG. 1 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention. Figure 6 is a schematic diagram showing the Figure 5 The cross-sectional view of the cross-sectional shape along the II-II' line is shown. Figure 7 is a schematic diagram showing the Figure 5 The cross-sectional view of the cross-sectional shape along the line III-III' is shown.
[0083] Reference Figure 5 The deposition source SO-1 may include a housing HO, a plurality of first nozzles NO1, and a plurality of second nozzles NO2. The deposition source SO-1 according to this embodiment may be moved along the second direction DR2 (refer to FIG. Figure 2 ).
[0084] According to an embodiment of the present invention, the first nozzle NO1 and the second nozzle NO2 may be disposed on the housing HO. The first nozzle NO1 and the second nozzle NO2 may be alternately disposed in the first direction DR1. Figure 5 In the figure, the number of the first nozzles NO1 and the number of the second nozzles NO2 are five, but this is only a schematic illustration, and the number of the first nozzles NO1 and the second nozzles NO2 is not limited to this.
[0085] With reference to the first direction DR1, the distance between the Nth first nozzle NO1 and the Nth second nozzle NO2 may be smaller than the distance between the Nth second nozzle NO2 and the N+1th first nozzle NO1. For example, the Nth first nozzle NO1 and the Nth second nozzle NO2 may contact each other, and the N+1th first nozzle NO1 may be spaced apart from the Nth second nozzle NO2 in the first direction DR1. Where N is a natural number.
[0086] According to one embodiment of the present invention, the first nozzle NO1 and the second nozzle NO2 may overlap with each other when viewed from the first direction DR1. More specifically, the nozzle holes NO1-H of the first nozzle NO1 and the nozzle holes NO2-H of the second nozzle NO2 may overlap with each other when viewed from the first direction DR1. That is, with reference to the second direction DR2, which is the moving direction of the deposition source SO-1, the center of the nozzle hole NO1-H of the first nozzle NO1 and the center of the nozzle hole NO2-H of the second nozzle NO2 may be arranged on the same line.
[0087] Reference Figure 6 The first nozzle NO1 may be connected to the first crucible CB1. A first tube TU1-1 may be provided between the first nozzle NO1 and the first crucible CB1. One end of the first tube TU1-1 may be connected to the first crucible CB1. The other end of the first tube TU1-1 may be connected to the nozzle hole NO1-H of the first nozzle NO1.
[0088] Reference Figure 7 The second nozzle NO2 may be connected to the second crucible CB2. A second tube TU2-1 may be provided between the second nozzle NO2 and the second crucible CB2. One end of the second tube TU2-1 may be connected to the second crucible CB2. The other end of the second tube TU2-1 may be connected to the nozzle hole NO2-H of the second nozzle NO2.
[0089] According to one embodiment of the present invention, the first deposition material DM1 contained in the first crucible CB1 can be discharged outside the deposition source SO-1 through the first tube TU1-1 and the first nozzle NO1. The second deposition material DM2 contained in the second crucible CB2 can be discharged outside the deposition source SO-1 through the second tube TU2-1 and the second nozzle NO2.
[0090] According to an embodiment of the present invention, the first deposition material DM1 and the second deposition material DM2 are discharged to the outside of the deposition source SO-1 through independent paths, and thus may not be mixed inside the deposition source SO-1.
[0091] Furthermore, according to one embodiment of the present invention, the first nozzle NO1 and the second nozzle NO2, which discharge different deposition materials DM1 and DM2, can be arranged side by side in a direction (i.e., first direction DR1) perpendicular to the direction of movement of the deposition source SO-1 (i.e., second direction DR2). Consequently, based on the direction of movement of the deposition source SO-1 (second direction DR2), the range over which the first deposition material DM1 and the range over which the second deposition material DM2 are discharged onto the target substrate SUB can completely overlap. As a result, a uniform mixture of the first and second deposition materials DM1 and DM2 can be deposited on the target substrate SUB.
[0092] Figure 8 FIG. 1 is a cross-sectional view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention. Figure 8 The shape of the deposition source SO-2 shown can be Figure 3 The deposition source SO shown is similar.
[0093] Reference Figure 8 The deposition source SO-2 may further include a gas storage unit and a control valve. In one embodiment, the gas storage unit may be disposed between the nozzle NO and the crucible. The gas storage unit may include a first gas storage unit GS1 and a second gas storage unit GS2. The first gas storage unit GS1 may be disposed between the first tube TU1 and the first crucible CB1. In this embodiment, one end of the first tube TU1 may be connected to the first gas storage unit GS1.
[0094] A first sub-tube STU1 may be provided between the first gas storage part GS1 and the first crucible CB1. The first gas storage part GS1 may be in communication with the first crucible CB1 through the first sub-tube STU1.
[0095] The second gas storage unit GS2 may be disposed between the second tube TU2 and the second crucible CB2. One end of the second tube TU2 may be connected to the second gas storage unit GS2. A second sub-tube STU2 may be disposed between the second gas storage unit GS2 and the second crucible CB2. The second gas storage unit GS2 may be connected to the second crucible CB2 via the second sub-tube STU2.
[0096] According to an embodiment of the present invention, the control valve may include a first control valve VA1 and a second control valve VA2. The first control valve VA1 may be disposed between the first gas storage portion GS1 and the first crucible CB1. For example, the first control valve VA1 may be disposed on the first sub-tube STU1.
[0097] The first control valve VA1 can open or close the path inside the first sub-pipe STU1. More specifically, the first control valve VA1 can fully open, partially open, or fully close the path inside the first sub-pipe STU1.
[0098] The second control valve VA2 may be provided between the second gas storage unit GS2 and the second crucible CB2. For example, the second control valve VA2 may be provided on the second sub-tube STU2. The second control valve VA2 may partially or completely open or close the path inside the second sub-tube STU2.
[0099] According to an embodiment of the present invention, the deposition source SO-2 is further provided with a gas storage portion and a control valve, thereby making it possible to easily control the discharge rates of the first deposition material DM1 and the second deposition material DM2.
[0100] According to an embodiment of the present invention, when there is no target substrate SUB in the deposition device DD, the problem of waste of deposition materials can be improved by controlling valves VA1 and VA2 to block the sub-tubes STU1 and STU2 through which the deposition materials DM1 and DM2 move.
[0101] Figure 9 FIG. 1 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention. Figure 9 The deposition source SO-3 is shown to be movable along the second direction DR2.
[0102] Reference Figure 9 The deposition source SO-3 may include a housing HO-3, a plurality of first nozzles NO1, a plurality of second nozzles NO2, a first crucible CB1-3, and a second crucible CB2-3. Figure 9 The shapes and arrangement structures of the first nozzle NO1 and the second nozzle NO2 shown can be the same as those of the Figure 5 The first nozzle NO1 and the second nozzle NO2 shown are identical.
[0103] According to this embodiment, the first crucible CB1-3 and the second crucible CB2-3 may be disposed outside the housing HO-3. For example, the first crucible CB1-3 and the second crucible CB2-3 may be disposed on a side surface of the housing HO-3. The first crucible CB1-3 and the second crucible CB2-3 may be arranged along the first direction DR1.
[0104] The first nozzle NO1 may be connected to the first crucible CB1-3. A plurality of first tubes TU1-3 may be provided inside the housing HO-3, connecting the first nozzles NO1 and the first crucible CB1-3. The second nozzle NO2 may be connected to the second crucible CB2-3. A plurality of second tubes TU2-3 may be provided inside the housing HO-3, connecting the second nozzles NO2 and the second crucible CB2-3.
[0105] According to one embodiment of the present invention, since the first and second crucibles CB1-3 and CB2-3 for containing the deposition material are arranged outside the shell HO-3, the shape, volume, setting structure, etc. of the first and second crucibles CB1-3 and CB2-3 can be freely designed.
[0106] Figure 10 FIG. 1 is a cross-sectional view schematically illustrating a nozzle structure of a deposition source of a deposition apparatus according to an embodiment of the present invention. Figure 10 The deposition source SO' shown may have the same Figure 4 The deposition source SO shown has the same structure.
[0107] Reference Figure 10 A single nozzle hole NH may be defined in the nozzle NO' of the deposition source SO'. The single nozzle hole NH may have a circular shape when viewed from above. However, the present invention is not limited thereto.
[0108] The first crucible CB1 and the second crucible CB2 can be connected to the single nozzle hole NH through the first tube TU1 and the second tube TU2. The first deposition material DM1 and the second deposition material DM2 can move independently through the first tube TU1 and the second tube TU2 in the housing HO, and be mixed in the single nozzle hole NH and discharged out of the nozzle NO'.
[0109] According to the present embodiment, since the first deposition material DM1 and the second deposition material DM2 are mixed and discharged in the nozzle hole NH that is the end of the nozzle NO′, the deposition source SO′ can discharge uniformly mixed deposition materials.
[0110] The present invention has been described above with reference to an embodiment. However, those skilled in the art will appreciate that the present invention may be modified and altered in various ways without departing from the scope and spirit of the invention as described in the appended claims.
[0111] The embodiments disclosed in the present invention are not intended to limit the technical ideas of the present invention, and all technical ideas within the scope of the appended claims and equivalents thereto should be interpreted as being included in the scope of rights of the present invention.
[0112] Description of Reference Numerals
[0113] DD: deposition device CH: chamber
[0114] GA: Gate MP: Moving Plate
[0115] MK: Mask assembly SO: Deposition source
[0116] HO: Shell NO: Nozzle
[0117] NH1: First nozzle hole NH2: Second nozzle hole
[0118] CB1: First Crucible CB2: Second Crucible
[0119] TU1: first tube TU2: second tube
Claims
1. A deposition apparatus comprising: a housing extending along a first direction; a plurality of first nozzles and a plurality of second nozzles, disposed on the housing, wherein the first nozzles define a first nozzle hole, and the second nozzles define a second nozzle hole, the first nozzles and the second nozzles are arranged to alternate with and overlap with each other in the first direction, and with the first direction as a reference, a distance between the Nth first nozzle and the Nth second nozzle is smaller than a distance between the Nth second nozzle and the N+1th first nozzle, where N is a natural number; a crucible disposed inside the housing and comprising a first crucible for accommodating a first deposition material and a second crucible for accommodating a second deposition material; as well as The connecting portion includes a first tube provided between the first nozzle hole and the first crucible and a second tube provided between the second nozzle hole and the second crucible. The first crucible and the second crucible are arranged on the outer side of the shell, The first crucible and the second crucible are arranged along the first direction, The multiple first nozzles are connected to the first crucible, the multiple second nozzles are connected to the second crucible, and a plurality of first tubes connecting the multiple first nozzles and the first crucible respectively and a plurality of second tubes connecting the multiple second nozzles and the second crucible respectively are provided inside the shell.
2. The deposition apparatus according to claim 1, wherein: The housing moves along the second direction.
3. The deposition apparatus according to claim 1, wherein: The first deposition material is discharged from the first nozzle through a first flow channel defined by the first crucible, the first tube, and the first nozzle hole, and the second deposition material is discharged from the second nozzle through a second flow channel defined by the second crucible, the second tube, and the second nozzle hole, and the first deposition material and the second deposition material do not mix with each other inside the shell and the first and second nozzles.
4. The deposition device according to claim 1, The invention may further include a gas storage portion provided between the first nozzle, the second nozzle, and the crucible.
5. The deposition apparatus according to claim 4, wherein: The gas storage unit includes: a first gas storage portion disposed between the first tube and the first crucible; and A second gas storage portion is provided between the second tube and the second crucible.
6. The deposition apparatus according to claim 5, further comprising: a first control valve disposed between the first gas storage portion and the first crucible; as well as A second control valve is provided between the second gas storage portion and the second crucible.
Citation Information
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